JPS54123886A - Semiconductor laser unit for high speed modulation - Google Patents

Semiconductor laser unit for high speed modulation

Info

Publication number
JPS54123886A
JPS54123886A JP3133778A JP3133778A JPS54123886A JP S54123886 A JPS54123886 A JP S54123886A JP 3133778 A JP3133778 A JP 3133778A JP 3133778 A JP3133778 A JP 3133778A JP S54123886 A JPS54123886 A JP S54123886A
Authority
JP
Japan
Prior art keywords
layer
active layer
electrodes
type
oscillation light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3133778A
Other languages
Japanese (ja)
Other versions
JPS6125234B2 (en
Inventor
Rangu.Roi
Isao Hino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3133778A priority Critical patent/JPS54123886A/en
Publication of JPS54123886A publication Critical patent/JPS54123886A/en
Publication of JPS6125234B2 publication Critical patent/JPS6125234B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To modulate the oscillation light fed to the optical waveguide provided opposingly with the active layer, by sectioning electrically and in construction the stripe electrode constituting semiconductor laser of multi-layer and multiplex hetero construction, and by controlling the current flowing to the electrodes. CONSTITUTION:On the N type GaAs substrate 2 in common use with one electrode, N type Ga1-yAlyAs layer 3, GaAs active layer 4, P type Ga1-yAlyAs layer 5, and P type GaAs layer 6 are epitaxially grown with lamination. Further, on the layer 6, the stripe electrodes 7 to 9 sectioned electrically are formed, and the photo conduction path 10 receiving the output from the laser is provided while being opposed at the end of the active layer 4. With this constitution, while keeping the total current flowing to the electrodes 7 to 9 constant, by changing the share current, the oscillation light caused from the boundary of the active layer 4 is moved in parallel with the end of the layer 4. Accordingly, the intensity of light delivered propagating into the optical waveguide path 10 which receives the oscillation light is modulated and it is suitable for the monitor.
JP3133778A 1978-03-17 1978-03-17 Semiconductor laser unit for high speed modulation Granted JPS54123886A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3133778A JPS54123886A (en) 1978-03-17 1978-03-17 Semiconductor laser unit for high speed modulation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3133778A JPS54123886A (en) 1978-03-17 1978-03-17 Semiconductor laser unit for high speed modulation

Publications (2)

Publication Number Publication Date
JPS54123886A true JPS54123886A (en) 1979-09-26
JPS6125234B2 JPS6125234B2 (en) 1986-06-14

Family

ID=12328426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3133778A Granted JPS54123886A (en) 1978-03-17 1978-03-17 Semiconductor laser unit for high speed modulation

Country Status (1)

Country Link
JP (1) JPS54123886A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57210684A (en) * 1981-02-09 1982-12-24 Fujitsu Ltd Photosemiconductor device
JPS5932188A (en) * 1982-08-16 1984-02-21 Omron Tateisi Electronics Co Beam scan type semiconductor laser
JPS61196591A (en) * 1985-02-25 1986-08-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser
US4813054A (en) * 1986-11-08 1989-03-14 Stc Plc Distributed feedback laser
JP2016111087A (en) * 2014-12-03 2016-06-20 株式会社豊田中央研究所 Optical semiconductor element, optical semiconductor device, and mounting method for optical semiconductor element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57210684A (en) * 1981-02-09 1982-12-24 Fujitsu Ltd Photosemiconductor device
JPS5932188A (en) * 1982-08-16 1984-02-21 Omron Tateisi Electronics Co Beam scan type semiconductor laser
JPH041515B2 (en) * 1982-08-16 1992-01-13 Omron Tateisi Electronics Co
JPS61196591A (en) * 1985-02-25 1986-08-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser
US4813054A (en) * 1986-11-08 1989-03-14 Stc Plc Distributed feedback laser
JP2016111087A (en) * 2014-12-03 2016-06-20 株式会社豊田中央研究所 Optical semiconductor element, optical semiconductor device, and mounting method for optical semiconductor element

Also Published As

Publication number Publication date
JPS6125234B2 (en) 1986-06-14

Similar Documents

Publication Publication Date Title
US4803692A (en) Semiconductor laser devices
CN104052549B (en) Method of fabricating and operating an optical modulator
RU2009101115A (en) OPTOELECTRONIC DEVICE FOR HIGH-SPEED DATA TRANSFER
JPS54123886A (en) Semiconductor laser unit for high speed modulation
EP0132139B1 (en) A light amplifier based on the magnetoelectric-photo effect
JP2891741B2 (en) Semiconductor integrated light source
JPH0451997B2 (en)
JPS5493380A (en) Semiconductor light emitting device
JPS5640287A (en) Semiconductor light-emitting device
JPS6465893A (en) Semiconductor laser device
JP2820442B2 (en) Output Waveform Stabilization Method for Electroabsorption Optical Modulator
ES476750A1 (en) Infra red light emissive devices.
JPS5816620B2 (en) Optical integrated circuit device
JPS6395690A (en) Surface emission type semiconductor laser
JPS5737892A (en) Injection type laser
JPS57124489A (en) Two wavelength semiconductor light emitting element
JPS57145388A (en) Control method for laser light generation
JPS6489579A (en) Fiber laser device
JPS56116685A (en) Semiconductor laser device
JPS54138386A (en) Semiconductor laser device of current narrow type
CN116885560A (en) Electroabsorption modulation laser chip and manufacturing method thereof
JPS57139982A (en) Semiconductor laser element
JPS6342866B2 (en)
JPS5661187A (en) Buried-type semiconductor light-emitting element
JPS5361987A (en) Semiconductor laser device