JPS5640287A - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device

Info

Publication number
JPS5640287A
JPS5640287A JP11710079A JP11710079A JPS5640287A JP S5640287 A JPS5640287 A JP S5640287A JP 11710079 A JP11710079 A JP 11710079A JP 11710079 A JP11710079 A JP 11710079A JP S5640287 A JPS5640287 A JP S5640287A
Authority
JP
Japan
Prior art keywords
layer
grown
type gaalas
forbidden band
band width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11710079A
Other languages
Japanese (ja)
Inventor
Kazunari Oota
Masaru Kazumura
Haruyoshi Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11710079A priority Critical patent/JPS5640287A/en
Publication of JPS5640287A publication Critical patent/JPS5640287A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4246—Bidirectionally operating package structures

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To permit an optical wavelength multiplex communication using near-by wavelengths by providing a filter layer interrupting the light having shorter wavelengths than the principal wavelength above the double hetero structure in a light-emitting element in order to narrow the spectral line half width. CONSTITUTION:On an N type GaAs substrate 11, an N type GaAlAs filter layer 12 is grown by the liquid phase epitaxy. On this, an N type GaAlAs layer 13 having a wider forbidden band width than the layer 12 is grown. On this, moreover, a P type GaAlAs layer 14 having a narrower forbidden band width than the layer 13 is grown. The layer 14 is coated with a P type GaAlAs layer 15 having a wider forbidden band width than the layer 14 to form a double hetero structure together with the layer 13. Then the layer 15 is covered with a film 16, in which a window is opened to provide an electrode 18. An opening is made on the substrate 11 side, and an optical fiber 19 is inserted. The surface of the substrate 11 surrounding the fiber 19 is coated with an annular positive electrode 17. Thus, the layer 12 prevents the bottom of the spectrum from spreading over the short wavelength side.
JP11710079A 1979-09-11 1979-09-11 Semiconductor light-emitting device Pending JPS5640287A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11710079A JPS5640287A (en) 1979-09-11 1979-09-11 Semiconductor light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11710079A JPS5640287A (en) 1979-09-11 1979-09-11 Semiconductor light-emitting device

Publications (1)

Publication Number Publication Date
JPS5640287A true JPS5640287A (en) 1981-04-16

Family

ID=14703392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11710079A Pending JPS5640287A (en) 1979-09-11 1979-09-11 Semiconductor light-emitting device

Country Status (1)

Country Link
JP (1) JPS5640287A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57193080A (en) * 1981-05-22 1982-11-27 Nec Corp Plane light emission type high intensity light emitting diode
JPS61104680A (en) * 1984-10-27 1986-05-22 Toshiba Corp Manufacture of led
JPH06502281A (en) * 1991-05-08 1994-03-10 アセア　ブラウン　ボベリ　アクチボラグ surface emitting light emitting diode
JPH06237016A (en) * 1993-02-09 1994-08-23 Matsushita Electric Ind Co Ltd Optical fiber module and manufacture thereof
JP2006108350A (en) * 2004-10-05 2006-04-20 Stanley Electric Co Ltd Semiconductor light emitting device
WO2015074950A1 (en) * 2013-11-19 2015-05-28 Osram Opto Semiconductors Gmbh Light emitting semiconductor component comprising an absorptive layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53129592A (en) * 1977-04-15 1978-11-11 Thomson Csf Electric field light emission and light detecting diode and bus line utilizing same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53129592A (en) * 1977-04-15 1978-11-11 Thomson Csf Electric field light emission and light detecting diode and bus line utilizing same

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57193080A (en) * 1981-05-22 1982-11-27 Nec Corp Plane light emission type high intensity light emitting diode
JPS61104680A (en) * 1984-10-27 1986-05-22 Toshiba Corp Manufacture of led
JPH06502281A (en) * 1991-05-08 1994-03-10 アセア　ブラウン　ボベリ　アクチボラグ surface emitting light emitting diode
JPH06237016A (en) * 1993-02-09 1994-08-23 Matsushita Electric Ind Co Ltd Optical fiber module and manufacture thereof
JP2006108350A (en) * 2004-10-05 2006-04-20 Stanley Electric Co Ltd Semiconductor light emitting device
US7880187B2 (en) 2004-10-05 2011-02-01 Stanley Electric Co., Ltd. Semiconductor light emitting device having narrow radiation spectrum
DE102005046417B4 (en) * 2004-10-05 2020-03-26 Stanley Electric Co. Ltd. Semiconductor light emitting device with a narrow radiation spectrum
WO2015074950A1 (en) * 2013-11-19 2015-05-28 Osram Opto Semiconductors Gmbh Light emitting semiconductor component comprising an absorptive layer
CN105849917A (en) * 2013-11-19 2016-08-10 欧司朗光电半导体有限公司 Light emitting semiconductor component comprising an absorptive layer
US9685584B2 (en) 2013-11-19 2017-06-20 Osram Opto Semiconductors Gmbh Light emitting semiconductor component including an absorptive layer
CN105849917B (en) * 2013-11-19 2018-02-16 欧司朗光电半导体有限公司 Luminous semiconductor device with absorbed layer
DE102013112740B4 (en) * 2013-11-19 2021-03-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Radiation-emitting semiconductor component

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