JPS5640287A - Semiconductor light-emitting device - Google Patents
Semiconductor light-emitting deviceInfo
- Publication number
- JPS5640287A JPS5640287A JP11710079A JP11710079A JPS5640287A JP S5640287 A JPS5640287 A JP S5640287A JP 11710079 A JP11710079 A JP 11710079A JP 11710079 A JP11710079 A JP 11710079A JP S5640287 A JPS5640287 A JP S5640287A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- grown
- type gaalas
- forbidden band
- band width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4246—Bidirectionally operating package structures
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To permit an optical wavelength multiplex communication using near-by wavelengths by providing a filter layer interrupting the light having shorter wavelengths than the principal wavelength above the double hetero structure in a light-emitting element in order to narrow the spectral line half width. CONSTITUTION:On an N type GaAs substrate 11, an N type GaAlAs filter layer 12 is grown by the liquid phase epitaxy. On this, an N type GaAlAs layer 13 having a wider forbidden band width than the layer 12 is grown. On this, moreover, a P type GaAlAs layer 14 having a narrower forbidden band width than the layer 13 is grown. The layer 14 is coated with a P type GaAlAs layer 15 having a wider forbidden band width than the layer 14 to form a double hetero structure together with the layer 13. Then the layer 15 is covered with a film 16, in which a window is opened to provide an electrode 18. An opening is made on the substrate 11 side, and an optical fiber 19 is inserted. The surface of the substrate 11 surrounding the fiber 19 is coated with an annular positive electrode 17. Thus, the layer 12 prevents the bottom of the spectrum from spreading over the short wavelength side.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11710079A JPS5640287A (en) | 1979-09-11 | 1979-09-11 | Semiconductor light-emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11710079A JPS5640287A (en) | 1979-09-11 | 1979-09-11 | Semiconductor light-emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5640287A true JPS5640287A (en) | 1981-04-16 |
Family
ID=14703392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11710079A Pending JPS5640287A (en) | 1979-09-11 | 1979-09-11 | Semiconductor light-emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5640287A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57193080A (en) * | 1981-05-22 | 1982-11-27 | Nec Corp | Plane light emission type high intensity light emitting diode |
JPS61104680A (en) * | 1984-10-27 | 1986-05-22 | Toshiba Corp | Manufacture of led |
JPH06502281A (en) * | 1991-05-08 | 1994-03-10 | アセア ブラウン ボベリ アクチボラグ | surface emitting light emitting diode |
JPH06237016A (en) * | 1993-02-09 | 1994-08-23 | Matsushita Electric Ind Co Ltd | Optical fiber module and manufacture thereof |
JP2006108350A (en) * | 2004-10-05 | 2006-04-20 | Stanley Electric Co Ltd | Semiconductor light emitting device |
WO2015074950A1 (en) * | 2013-11-19 | 2015-05-28 | Osram Opto Semiconductors Gmbh | Light emitting semiconductor component comprising an absorptive layer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53129592A (en) * | 1977-04-15 | 1978-11-11 | Thomson Csf | Electric field light emission and light detecting diode and bus line utilizing same |
-
1979
- 1979-09-11 JP JP11710079A patent/JPS5640287A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53129592A (en) * | 1977-04-15 | 1978-11-11 | Thomson Csf | Electric field light emission and light detecting diode and bus line utilizing same |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57193080A (en) * | 1981-05-22 | 1982-11-27 | Nec Corp | Plane light emission type high intensity light emitting diode |
JPS61104680A (en) * | 1984-10-27 | 1986-05-22 | Toshiba Corp | Manufacture of led |
JPH06502281A (en) * | 1991-05-08 | 1994-03-10 | アセア ブラウン ボベリ アクチボラグ | surface emitting light emitting diode |
JPH06237016A (en) * | 1993-02-09 | 1994-08-23 | Matsushita Electric Ind Co Ltd | Optical fiber module and manufacture thereof |
JP2006108350A (en) * | 2004-10-05 | 2006-04-20 | Stanley Electric Co Ltd | Semiconductor light emitting device |
US7880187B2 (en) | 2004-10-05 | 2011-02-01 | Stanley Electric Co., Ltd. | Semiconductor light emitting device having narrow radiation spectrum |
DE102005046417B4 (en) * | 2004-10-05 | 2020-03-26 | Stanley Electric Co. Ltd. | Semiconductor light emitting device with a narrow radiation spectrum |
WO2015074950A1 (en) * | 2013-11-19 | 2015-05-28 | Osram Opto Semiconductors Gmbh | Light emitting semiconductor component comprising an absorptive layer |
CN105849917A (en) * | 2013-11-19 | 2016-08-10 | 欧司朗光电半导体有限公司 | Light emitting semiconductor component comprising an absorptive layer |
US9685584B2 (en) | 2013-11-19 | 2017-06-20 | Osram Opto Semiconductors Gmbh | Light emitting semiconductor component including an absorptive layer |
CN105849917B (en) * | 2013-11-19 | 2018-02-16 | 欧司朗光电半导体有限公司 | Luminous semiconductor device with absorbed layer |
DE102013112740B4 (en) * | 2013-11-19 | 2021-03-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Radiation-emitting semiconductor component |
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