JPS54107689A - Semiconductor laser element - Google Patents
Semiconductor laser elementInfo
- Publication number
- JPS54107689A JPS54107689A JP1426478A JP1426478A JPS54107689A JP S54107689 A JPS54107689 A JP S54107689A JP 1426478 A JP1426478 A JP 1426478A JP 1426478 A JP1426478 A JP 1426478A JP S54107689 A JPS54107689 A JP S54107689A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- type gaas
- laser element
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To emit the laser light different in two wave lengths from one element, by coupling it to the optical fiber directly without using multiplexer, in the laser element as multiplex communication light source.
CONSTITUTION: In the semiconductor laser element constituted with multi-layer hetero junction, on the n type GaAs substrate 10, and on the n type GaAs substrate 10 of given thickness, n type Al0.3Ga0.7As layer 11 of a given thickness, P type GaAs active layer 12, P type Al0.3Ga0.7As layer 13 and n type GaAs layer 14 are formed. In the SiO2 film formed on the layer 14, Zn is diffused in the region 15 through the stripes made with the photo resist technology and the Zn diffusion front 16 is made contact with the boundary of the active layers 12 and 11 or slightly deeper. Further, through new stripes of SiO2, Zn is diffused to the region 17, and the diffusion front 18 is made upper than the active layer 12 in the layer 13, and the P type ohmic contacts 19, 19' are independently formed in the regions 15 and 17.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1426478A JPS54107689A (en) | 1978-02-10 | 1978-02-10 | Semiconductor laser element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1426478A JPS54107689A (en) | 1978-02-10 | 1978-02-10 | Semiconductor laser element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54107689A true JPS54107689A (en) | 1979-08-23 |
Family
ID=11856226
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1426478A Pending JPS54107689A (en) | 1978-02-10 | 1978-02-10 | Semiconductor laser element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54107689A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57169291A (en) * | 1981-03-23 | 1982-10-18 | Philips Nv | Semiconductor laser device and method of producing same |
JPS5879791A (en) * | 1981-11-06 | 1983-05-13 | Nec Corp | Two wave-length buried hetero-structure semiconductor laser |
FR2525033A1 (en) * | 1982-04-08 | 1983-10-14 | Bouadma Noureddine | SEMICONDUCTOR LASER HAVING SEVERAL INDEPENDENT WAVE LENGTHS AND METHOD OF MAKING SAME |
WO2005041373A1 (en) * | 2003-10-24 | 2005-05-06 | Pioneer Corporation | Semiconductor laser and manufacturing method |
JP2005327905A (en) * | 2004-05-14 | 2005-11-24 | Sony Corp | Semiconductor light emitting device and optical apparatus using the same |
JP2010183120A (en) * | 1998-05-06 | 2010-08-19 | Xerox Corp | Multiple wavelength laser array fabricated by flip-chip bonding |
-
1978
- 1978-02-10 JP JP1426478A patent/JPS54107689A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57169291A (en) * | 1981-03-23 | 1982-10-18 | Philips Nv | Semiconductor laser device and method of producing same |
JPS5879791A (en) * | 1981-11-06 | 1983-05-13 | Nec Corp | Two wave-length buried hetero-structure semiconductor laser |
FR2525033A1 (en) * | 1982-04-08 | 1983-10-14 | Bouadma Noureddine | SEMICONDUCTOR LASER HAVING SEVERAL INDEPENDENT WAVE LENGTHS AND METHOD OF MAKING SAME |
EP0091859A2 (en) * | 1982-04-08 | 1983-10-19 | Noureddine Bouadma | Method for the production of a semiconductor laser having several independent wavelengths |
JP2010183120A (en) * | 1998-05-06 | 2010-08-19 | Xerox Corp | Multiple wavelength laser array fabricated by flip-chip bonding |
WO2005041373A1 (en) * | 2003-10-24 | 2005-05-06 | Pioneer Corporation | Semiconductor laser and manufacturing method |
US7477669B2 (en) | 2003-10-24 | 2009-01-13 | Pioneer Corporation | Semiconductor laser device and method of manufacturing the same |
JP2005327905A (en) * | 2004-05-14 | 2005-11-24 | Sony Corp | Semiconductor light emitting device and optical apparatus using the same |
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