JPS54107689A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS54107689A
JPS54107689A JP1426478A JP1426478A JPS54107689A JP S54107689 A JPS54107689 A JP S54107689A JP 1426478 A JP1426478 A JP 1426478A JP 1426478 A JP1426478 A JP 1426478A JP S54107689 A JPS54107689 A JP S54107689A
Authority
JP
Japan
Prior art keywords
layer
type
type gaas
laser element
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1426478A
Other languages
Japanese (ja)
Inventor
Shinsuke Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1426478A priority Critical patent/JPS54107689A/en
Publication of JPS54107689A publication Critical patent/JPS54107689A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To emit the laser light different in two wave lengths from one element, by coupling it to the optical fiber directly without using multiplexer, in the laser element as multiplex communication light source.
CONSTITUTION: In the semiconductor laser element constituted with multi-layer hetero junction, on the n type GaAs substrate 10, and on the n type GaAs substrate 10 of given thickness, n type Al0.3Ga0.7As layer 11 of a given thickness, P type GaAs active layer 12, P type Al0.3Ga0.7As layer 13 and n type GaAs layer 14 are formed. In the SiO2 film formed on the layer 14, Zn is diffused in the region 15 through the stripes made with the photo resist technology and the Zn diffusion front 16 is made contact with the boundary of the active layers 12 and 11 or slightly deeper. Further, through new stripes of SiO2, Zn is diffused to the region 17, and the diffusion front 18 is made upper than the active layer 12 in the layer 13, and the P type ohmic contacts 19, 19' are independently formed in the regions 15 and 17.
COPYRIGHT: (C)1979,JPO&Japio
JP1426478A 1978-02-10 1978-02-10 Semiconductor laser element Pending JPS54107689A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1426478A JPS54107689A (en) 1978-02-10 1978-02-10 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1426478A JPS54107689A (en) 1978-02-10 1978-02-10 Semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS54107689A true JPS54107689A (en) 1979-08-23

Family

ID=11856226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1426478A Pending JPS54107689A (en) 1978-02-10 1978-02-10 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS54107689A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57169291A (en) * 1981-03-23 1982-10-18 Philips Nv Semiconductor laser device and method of producing same
JPS5879791A (en) * 1981-11-06 1983-05-13 Nec Corp Two wave-length buried hetero-structure semiconductor laser
FR2525033A1 (en) * 1982-04-08 1983-10-14 Bouadma Noureddine SEMICONDUCTOR LASER HAVING SEVERAL INDEPENDENT WAVE LENGTHS AND METHOD OF MAKING SAME
WO2005041373A1 (en) * 2003-10-24 2005-05-06 Pioneer Corporation Semiconductor laser and manufacturing method
JP2005327905A (en) * 2004-05-14 2005-11-24 Sony Corp Semiconductor light emitting device and optical apparatus using the same
JP2010183120A (en) * 1998-05-06 2010-08-19 Xerox Corp Multiple wavelength laser array fabricated by flip-chip bonding

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57169291A (en) * 1981-03-23 1982-10-18 Philips Nv Semiconductor laser device and method of producing same
JPS5879791A (en) * 1981-11-06 1983-05-13 Nec Corp Two wave-length buried hetero-structure semiconductor laser
FR2525033A1 (en) * 1982-04-08 1983-10-14 Bouadma Noureddine SEMICONDUCTOR LASER HAVING SEVERAL INDEPENDENT WAVE LENGTHS AND METHOD OF MAKING SAME
EP0091859A2 (en) * 1982-04-08 1983-10-19 Noureddine Bouadma Method for the production of a semiconductor laser having several independent wavelengths
JP2010183120A (en) * 1998-05-06 2010-08-19 Xerox Corp Multiple wavelength laser array fabricated by flip-chip bonding
WO2005041373A1 (en) * 2003-10-24 2005-05-06 Pioneer Corporation Semiconductor laser and manufacturing method
US7477669B2 (en) 2003-10-24 2009-01-13 Pioneer Corporation Semiconductor laser device and method of manufacturing the same
JP2005327905A (en) * 2004-05-14 2005-11-24 Sony Corp Semiconductor light emitting device and optical apparatus using the same

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