CN116885560A - Electroabsorption modulation laser chip and manufacturing method thereof - Google Patents
Electroabsorption modulation laser chip and manufacturing method thereof Download PDFInfo
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- CN116885560A CN116885560A CN202310780751.9A CN202310780751A CN116885560A CN 116885560 A CN116885560 A CN 116885560A CN 202310780751 A CN202310780751 A CN 202310780751A CN 116885560 A CN116885560 A CN 116885560A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 230000003287 optical effect Effects 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 16
- 230000017525 heat dissipation Effects 0.000 abstract description 11
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 239000002184 metal Substances 0.000 abstract description 10
- 230000003321 amplification Effects 0.000 abstract description 5
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 5
- 238000012360 testing method Methods 0.000 abstract description 4
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 5
- 238000005457 optimization Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0652—Coherence lowering or collapse, e.g. multimode emission by additional input or modulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention relates to an electroabsorption modulation laser chip, which comprises an integrated DFB laser, an EAM electroabsorption modulator and an SOA optical amplifier, wherein an electrode of the DFB laser is connected with an electrode of the SOA optical amplifier through an electrode connector with adjustable resistance. A method of fabricating an electroabsorption modulated laser chip is also provided. The invention uses the electrode connecting piece to connect the SOA with the DFB device, realizes the single source meter test of the performance of the DFB laser and the SOA optical amplifier, can reduce the driving quantity when the packaging work is carried out, enables the DFB laser and the SOA optical amplifier to carry out light-emitting mode selection and light amplification under the condition of single current source, improves the light-emitting power, reduces the chirp, increases the transmission distance, also increases the heat dissipation area of the DFB laser and the SOA optical amplifier due to the good heat dissipation performance of the metal electrode, and further, enables the DFB laser and the SOA optical amplifier to more reasonably distribute the current under the single current driving due to the adoption of the electrode connecting piece with adjustable resistance, thereby realizing balanced light power output.
Description
Technical Field
The invention relates to the technical field of optical communication, in particular to an electroabsorption modulation laser chip and a manufacturing method thereof.
Background
In recent years, the continuous development of cloud computing and data centers has an increasing demand for short-distance broadband transmission. Greatly promotes the upgrading of the data center from 10G/25G to 40G/100G architecture, and greatly promotes the requirement for high-speed optical modules, thereby promoting the development of high-speed photoelectric devices. In the field of transmission networks, a Direct Modulation Laser (DML) has the advantages of low cost and low power consumption, but the modulation bandwidth and the transmission distance are limited by relaxation oscillation frequency and chirp, so that in a high-speed modulation device, an external modulation mode is generally adopted to realize the modulation of a high-speed signal.
For the external modulator of high-speed modulation, mainly there are MZ modulator and semiconductor electroabsorption modulator, wherein electroabsorption modulator has advantages such as low driving voltage, high modulation rate, small chirp and small size compared with MZ modulator, electroabsorption modulation laser EML integrates DFB distributed feedback laser with EAM modulator, DFB laser only realizes gain and grating mode selection of light, and is responsible for intensity modulation of laser output light by EAM modulator, so has higher bandwidth and better chirp characteristic than DML, can realize higher rate and more distant transmission, therefore electroabsorption modulation laser EML is widely used in transmission network field.
Because the optical modulation principle is to use an EAM modulator to perform optical absorption, a larger absorption loss is generated in the process of the EAM modulation, and in order to prolong the transmission distance of a transmission network, the optical power output by the EML needs to be amplified, and generally two optical amplifiers are provided: the EDFA and the SOA of the erbium-doped optical fiber amplifier are used as semiconductor optoelectronic devices, and the SOA is the same as an EML material system, so that the EDFA and the SOA can be manufactured in a single-chip integrated manner on the same substrate, the integrated devices are smaller in size, better in stability and higher in coupling efficiency; in addition, under constant current, the SOA amplifier can generate negative chirp on the optical signal passing through the SOA amplifier, and the EML can generate positive chirp which is unfavorable for transmission under the working condition, so that after the SOA amplifier is integrated with the EML, the chirp of the output signal can be reduced, and the transmission distance can be prolonged.
In the existing SOA-EML electroabsorption modulation laser, there are problems that multiple driving currents are required, the heat dissipation area is small, and the modulation performance of the EAM electroabsorption modulator is affected.
Disclosure of Invention
The invention aims to provide an electroabsorption modulation laser chip and a manufacturing method thereof, which can at least solve part of defects in the prior art.
In order to achieve the above object, the embodiment of the present invention provides the following technical solutions: an electroabsorption modulation laser chip comprises an integrated DFB laser, an EAM electroabsorption modulator and an SOA optical amplifier, wherein an electrode of the DFB laser and an electrode of the SOA optical amplifier are connected through an electrode connector with adjustable resistance.
Further, the electrode connection member adjusts the resistance value by changing the shape and/or the width.
Further, the electrode connecting piece is in a long strip shape or a wavy strip shape.
Further, the electrode connecting piece is made of one or more of Ti and Pt.
Further, a waveguide is included through the DFB laser, the EAM electroabsorption modulator, and the SOA optical amplifier.
Further, the DFB laser, the EAM electroabsorption modulator and the SOA optical amplifier are sequentially distributed along the light emitting direction of the chip.
Further, the DFB laser, the EAM electroabsorption modulator, and the SOA optical amplifier are fabricated on a substrate.
The embodiment of the invention provides another technical scheme that: a manufacturing method of an electroabsorption modulation laser chip is used for manufacturing the electroabsorption modulation laser chip, and comprises the following steps:
s1, integrating the DFB laser, the EAM electroabsorption modulator and the SOA optical amplifier on a substrate,
s2, connecting the electrode of the DFB laser and the electrode of the SOA optical amplifier by adopting an electrode connecting piece with adjustable resistance.
Further, an InP buffer layer, an active layer, an InP layer, and a grating layer are epitaxially grown on the substrate, then a grating is fabricated in a region corresponding to the DFB laser, and the p-InP layer is buried again.
Further, the mask layer is continuously grown, the ridge waveguide is manufactured, and then an electric injection window is manufactured on the ridge.
Compared with the prior art, the invention has the beneficial effects that: the method has the advantages that the electrode connecting piece is used for connecting the SOA with the DFB device, the performance of the DFB laser and the SOA optical amplifier is tested by the single source meter, the driving quantity can be reduced when the packaging work is carried out, the DFB laser and the SOA optical amplifier can carry out light-emitting mode selection and light amplification under the condition of single current source, the light-emitting power is improved, the chirp is reduced, the transmission distance is increased, the heat dissipation area of the DFB laser and the SOA optical amplifier is also increased due to the good heat dissipation performance of metal of the metal electrode, and in addition, the current is more reasonably distributed by adopting the electrode connecting piece with adjustable resistance value under the single current driving condition, and the balanced light power output is realized.
Drawings
FIG. 1 is a schematic diagram of a conventional electroabsorption modulated laser chip;
FIG. 2 is a schematic diagram of an electro-absorption modulated laser chip according to an embodiment of the present invention;
FIG. 3 is a schematic view of a first form of an electrode connection of an electro-absorption modulated laser chip according to an embodiment of the present invention;
FIG. 4 is a schematic view of a second form of an electrode connection for an electro-absorption modulated laser chip according to an embodiment of the present invention;
in the reference numerals: an a-DFB laser area; a B-EAM electroabsorption modulator region; a C-SOA optical amplifier region; 1-an electrode; 2-waveguide; 3-grating.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 2, 3 and 4, an embodiment of the present invention provides an electro-absorption modulated laser chip, which includes an integrated DFB laser, an EAM electro-absorption modulator and an SOA optical amplifier, wherein an electrode of the DFB laser and an electrode of the SOA optical amplifier are connected through an electrode connector with adjustable resistance. In this embodiment, the electrode connector is used to connect the SOA with the DFB device, so as to realize the performance test of the DFB laser and the SOA optical amplifier by the single source meter, and the driving quantity can be reduced when the package works, so that the DFB laser and the SOA optical amplifier perform light-emitting mode selection and light amplification under the condition of single current source, the light-emitting power is improved, the chirp is reduced, the transmission distance is increased, and the heat dissipation area of the DFB laser and the SOA optical amplifier is also increased due to the good heat dissipation performance of the metal electrode. Specifically, unlike the conventional SOA integrated EML shown in fig. 1, in this embodiment, on the basis of the existing SOA-EML electro-absorption modulator, the SOA optical amplifier is connected to the DFB laser by using a metal electrode connector, so that the performance and quality of the DFB laser and the SOA optical amplifier can be tested by a single source meter, and meanwhile, the driving quantity can be reduced during packaging operation, so that the DFB laser and the SOA optical amplifier perform optical mode selection and optical amplification under the condition of a single current source. Compared with the conventional electroabsorption modulator integrated with the SOA optical amplifier, the electroabsorption modulator provided by the invention has the advantages that the testing system is simplified, the number of source tables of the testing system is reduced, the driving circuit in the later working process is simplified, and the DFB laser and the SOA optical amplifier can be driven simultaneously by only a single current source; under the drive of a single current source, compared with the traditional electroabsorption modulation laser, the SOA optical amplifier and the DFB laser work simultaneously and have larger light-emitting power, so that the transmission at a longer distance can be realized; the current ratio of the DFB laser and the SOA optical amplifier under a single current source can be changed by adjusting the resistance of the connecting electrode, so that more balanced optical power output can be realized. Meanwhile, the invention has no special requirements on the chip epitaxial integrated type or the waveguide structure, whether the chip epitaxial integrated type or the waveguide structure is a butt-joint growth, selective region growth or homoepitaxial structure, and whether the chip epitaxial integrated type or the waveguide structure is a ridge waveguide structure or a buried heterojunction structure, the structure of the embodiment can be used. In order to better distinguish the locations of the DFB laser, the EAM electro-absorption modulator and the SOA optical amplifier, the DFB laser, the EAM electro-absorption modulator and the SOA optical amplifier are defined as a DFB laser region A, EAM electro-absorption modulator region B and an SOA optical amplifier region C, respectively, and an electrode 1 of the DFB laser region a is electrically connected to an electrode 1 of the SOA optical amplifier region C through an electrode connection 4 as shown in fig. 2.
As an optimization scheme of the embodiment of the present invention, referring to fig. 2, 3 and 4, the electrode connection member 4 adjusts the resistance value by changing the shape and/or the width. The electrode connecting piece 4 is in a long strip shape or a wavy strip shape. The electrode connecting piece 4 is made of one or more of Ti and Pt. In this embodiment, the adjustable resistance can be adjusted by changing the shape or material of the electrode connector, that is, by adjusting the shape of the electrode connector in a structural manner, the shape of the electrode connector can be designed to be a strip shape as shown in fig. 3, or a wavy strip shape as shown in fig. 4, and the resistance can be flexibly adjusted by changing the width and length of the wavy strip, or changing the bending degree, the bending number, or the like of the wavy strip. The resistance value can be flexibly adjusted by selecting the material of the electrode connecting piece, namely by selecting high-resistivity metals such as Ti, pt and the like and the ratio, quality and the like of the metals. Of course, the adjustment can be performed by means of both structure and material. On the same day, the chirp complementation can be carried out with the EAM modulator by adjusting the structure and the material, and the transmission distance is increased.
As an optimization scheme of the embodiment of the present invention, referring to fig. 2, 3 and 4, the chip further includes a waveguide 2 penetrating the DFB laser, the EAM electro-absorption modulator and the SOA optical amplifier. In this embodiment, the waveguide 2 is also stripe-shaped, penetrating the DFB laser region A, EAM electroabsorption modulator region B and the SOA optical amplifier region C in order. Preferably, the waveguides may use a ridge waveguide structure (RWG) or a buried heterojunction structure (BH).
As an optimization scheme of the embodiment of the present invention, referring to fig. 2, 3 and 4, the DFB laser, the EAM electro-absorption modulator and the SOA optical amplifier are sequentially arranged along the light emitting direction of the chip. The DFB laser, the EAM electroabsorption modulator, and the SOA optical amplifier are fabricated on a substrate.
As an optimization scheme of the embodiment of the present invention, referring to fig. 2, 3 and 4, the dfb laser and the SOA optical amplifier operate using one current source driving. Integration of the DFB laser with the EAM electroabsorption modulator may use homoepitaxial growth, butt-joint growth, or selective region growth, with no special requirements on the integration mode.
Referring to fig. 2 to 4, an embodiment of the present invention provides a method for manufacturing an electro-absorption modulated laser chip, which is used for manufacturing the electro-absorption modulated laser chip, and includes the following steps: s1, integrating the DFB laser, the EAM electroabsorption modulator and the SOA optical amplifier on a substrate, and S2, connecting an electrode of the DFB laser and an electrode of the SOA optical amplifier by adopting an electrode connecting piece with an adjustable resistance. Under the condition of no new technology, the DFB laser is connected with the SOA optical amplifier for driving, and the performance test of the DFB and the SOA can be completed only by a single current source during the chip test. In addition, the DFB laser and the SOA amplifier can work only by providing single current drive, so that the number of drives in work is reduced, the power consumption is reduced, and the complexity of a drive circuit is reduced. And the area of the metal electrode on the surface of the chip is increased, so that the heat dissipation performance of the chip is improved. Through the integration of the SOA optical amplifier, the optical fiber is chirped complementarily with the EAM modulator, and the output optical power is high, so that the transmission distance is increased.
As an optimization scheme of the embodiment of the present invention, referring to fig. 2, 3 and 4, an InP buffer layer, an active layer, an InP layer and a grating layer are first epitaxially grown on a substrate by MOCVD. Then, the grating 3 is fabricated in the DFB region, and the p-InP layer is buried again by MOCVD. And then growing a SiO2 mask layer, manufacturing a ridge waveguide, and manufacturing an electric injection window on the ridge. Then, electrodes are manufactured, see fig. 3 and 4, and the electrode connecting piece 4 can be manufactured simultaneously with other electrodes of the device, or a one-step electrode process can be added separately, electrodes are manufactured by metals with higher resistivity such as Ti, pt and the like, and the resistance is changed. Finally, conventional thinning, alloying, stripping, coating, stripping and other manufacturing processes are carried out.
The invention solves the problem that a plurality of driving currents are needed, and increases the heat dissipation area of the DFB laser and the SOA optical amplifier through the good heat dissipation performance of metal, and does not influence the modulation performance of the EAM electroabsorption modulator. Compared with the existing SOA-EML electroabsorption modulation laser, the electroabsorption modulation laser has the advantages that the single current source can drive and the heat dissipation area is larger under the condition that the modulation rate and the optical amplification are not affected; compared with the traditional electroabsorption modulator, the working light-emitting power is larger, and the transmission at a longer distance can be realized; in addition, the resistance value is changed by adjusting the connection pattern of the DFB laser and the SOA optical amplifier electrode, so that the DFB laser and the SOA optical amplifier more reasonably distribute current under single current drive, and balanced optical power output is realized.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. An electroabsorption modulated laser chip comprising an integrated DFB laser, an EAM electroabsorption modulator, and an SOA optical amplifier, characterized by: and the electrode of the DFB laser and the electrode of the SOA optical amplifier are connected through an electrode connecting piece with adjustable resistance.
2. The electroabsorption modulated laser chip of claim 1, wherein: the electrode connection member adjusts the resistance by changing the shape and/or width.
3. The electroabsorption modulated laser chip of claim 1, wherein: the electrode connecting piece is in a long strip shape or a wavy strip shape.
4. An electroabsorption modulated laser chip as claimed in claim 1 or 3, wherein: the electrode connecting piece is made of one or more of Ti and Pt.
5. The electroabsorption modulated laser chip of claim 1, wherein: also included is a waveguide extending through the DFB laser, the EAM electroabsorption modulator, and the SOA optical amplifier.
6. The electroabsorption modulated laser chip of claim 1, wherein: and the DFB laser, the EAM electroabsorption modulator and the SOA optical amplifier are sequentially distributed along the light emitting direction of the chip.
7. The electroabsorption modulated laser chip of claim 1, wherein: the DFB laser, the EAM electroabsorption modulator, and the SOA optical amplifier are fabricated on a substrate.
8. A method for manufacturing an electroabsorption modulated laser chip, characterized by comprising the steps of:
s1, integrating the DFB laser, the EAM electroabsorption modulator and the SOA optical amplifier on a substrate,
s2, connecting the electrode of the DFB laser and the electrode of the SOA optical amplifier by adopting an electrode connecting piece with adjustable resistance.
9. The method for manufacturing the electroabsorption modulated laser chip as defined in claim 8, wherein: and epitaxially growing an InP buffer layer, an active layer, an InP layer and a grating layer on the substrate, then manufacturing a grating in a region corresponding to the DFB laser, and burying the p-InP layer again.
10. The method of fabricating an electroabsorption modulated laser chip of claim 9, wherein: and continuing to grow a mask layer, manufacturing a ridge waveguide, and manufacturing an electric injection window on the ridge.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310780751.9A CN116885560A (en) | 2023-06-29 | 2023-06-29 | Electroabsorption modulation laser chip and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310780751.9A CN116885560A (en) | 2023-06-29 | 2023-06-29 | Electroabsorption modulation laser chip and manufacturing method thereof |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103257509A (en) * | 2013-04-12 | 2013-08-21 | 中国科学院半导体研究所 | Selective area epitaxial growth monolithic integration wavelength converter |
| KR20130128651A (en) * | 2012-05-17 | 2013-11-27 | 한국전자통신연구원 | Electro-absorption modulator laser |
| CN107611772A (en) * | 2017-09-25 | 2018-01-19 | 清华大学 | Electroabsorption modulated laser and preparation method thereof |
| CN108879321A (en) * | 2018-09-12 | 2018-11-23 | 成都微泰光芯技术有限公司 | A kind of EML chip of integrated SOA |
| CN116014558A (en) * | 2023-02-06 | 2023-04-25 | 欧润光电科技(苏州)有限公司 | Semiconductor modulation laser amplifier chip and preparation method thereof |
| CN219268130U (en) * | 2023-05-29 | 2023-06-27 | 陕西源杰半导体科技股份有限公司 | Electroabsorption modulation laser chip |
-
2023
- 2023-06-29 CN CN202310780751.9A patent/CN116885560A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130128651A (en) * | 2012-05-17 | 2013-11-27 | 한국전자통신연구원 | Electro-absorption modulator laser |
| CN103257509A (en) * | 2013-04-12 | 2013-08-21 | 中国科学院半导体研究所 | Selective area epitaxial growth monolithic integration wavelength converter |
| CN107611772A (en) * | 2017-09-25 | 2018-01-19 | 清华大学 | Electroabsorption modulated laser and preparation method thereof |
| CN108879321A (en) * | 2018-09-12 | 2018-11-23 | 成都微泰光芯技术有限公司 | A kind of EML chip of integrated SOA |
| CN116014558A (en) * | 2023-02-06 | 2023-04-25 | 欧润光电科技(苏州)有限公司 | Semiconductor modulation laser amplifier chip and preparation method thereof |
| CN219268130U (en) * | 2023-05-29 | 2023-06-27 | 陕西源杰半导体科技股份有限公司 | Electroabsorption modulation laser chip |
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