CN207460192U - A kind of highly integrated multichannel optical transceiver module of silicon photon chip and active optical cable - Google Patents

Abstract

The utility model discloses a kind of highly integrated multichannel optical transceiver module of silicon photon chip, including：Silicon photon integrated chip, circuit integrated chip, assemble printed wiring board, silicon photon integrated chip, circuit integrated chip is integrated in assembling printed wiring board, silicon photon integrated chip includes silicon photon transmitting chip and silicon photon acceptor chip, circuit integrated chip integrates transmitting chip including circuit and circuit integrates reception chip, circuit integrates transmitting chip and is connected by conducting wire with silicon photon transmitting chip, silicon photon transmitting chip is connected to by optical patchcord on fiber active linker, circuit integrates reception chip and is connected by conducting wire with silicon photon acceptor chip, silicon photon acceptor chip is connected to by optical patchcord on fiber active linker.The utility model is based on advanced silicon photon chip integrated technology, provides a kind of integrated, low-power consumption, the 100Gbps high-speed silicon photon transceiver modules and active optical cable of low cost.

Description

A kind of highly integrated multichannel optical transceiver module of silicon photon chip and active optical cable

Technical field

The utility model is related to the communications field more particularly to a kind of highly integrated multichannel optical transceiver modules of silicon photon chip And active optical cable.

Background technology

With the accelerated development of the technologies such as big data, cloud computing, Internet of Things and 5G mobile communication, promote network data flow Sharp increase is measured, this causes the interconnection of broadband access, metropolitan area internet, backbone network and data center for the band of data communication Wide and rate requirement greatly promotes.Optical-fibre communications industry in the whole world is sent out towards the direction of Highgrade integration and low-power consumption at present Exhibition, upstream product of the optical communication device as optical communication industry play a key effect in field of data communication.Therefore, it is how real The minimizing, is integrated of existing optical communication device, low-power consumption and low cost has become current optical communication industry or even data service The active demand in market.

Optical module and active optical cable are the effective solutions of optical communication interconnection, and production is dependent on optical device industry.It passes The characteristics of optical device production model of system is " discrete ", the structural unit of current common optical device：Modulating/demodulating device, Semiconductor laser, detector and amplifier are manufactured using entirely different technique, separate type.Such as based on indium phosphide (chemical formula：InP) the laser of material preparation, based on lithium niobate (chemical formula：LiNO3) the optical signal modulator of material preparation, Based on silica/silicon (chemical formula：) and gallium arsenide phosphide indium/indium phosphide (chemical formula SiO2/Si：InGaAsP/InP) material system Standby wavelength division multiplexer, based on Ge/Si and GaAs (chemical formula：The optical detector of material preparations etc. such as GaAs).These are discrete Unit making after the completion of, be then assembled into optoelectronic module, need the work of manpower-intensive type in the process, which results in It is of high cost, appearance and size is big, reliability is low and performance limitation etc. series of malpractice.

Still further aspect, from the point of view of technological standards, due to lacking unified technological standards, each optical device company is in order to save Cost and the operation and development pattern for using " individual workship " formula, which results in product yield is low, low output and different product it Between compatibility issue.Have in addition, any enterprise for setting foot in optical device industry field must provide ultra-clean room and a full set of metal for oneself Chemical machine vapour deposition process (English name：MetalOrganic Chemical Vapor Deposition, referred to as：MOCVD) Equipment, manufacturer oneself will be that material, technique, design, quality and yield rate are responsible for.The Industry Model of this " Vertical collection " causes The asymmetry of scale of investment and output, the fund input and operation cost for causing each manufacturer remain high, and are imitated without scale It should.Therefore, optical device is of high cost, low output, and the income of wall scroll production line is bad, while lacks flexibility again, to the market demand The ability to bear of fluctuating is poor.

Silicon photon chip technology is different from the separation production of traditional optical communication device, modular production technology, it is integrated SOI and CMOS technology platform technology so that the exploitation of integrated photon chip, production and current main-stream semi-conductor industry is organic melts Close, for a large bandwidth and at a high rate, inexpensive and low energy consumption optical communication industry provide new solution.So-called silicon based opto-electronics Son learns the very high bandwidth, ultrafast rate, high noiseproof feature and the microelectric technique that are just combined with light in extensive, low energy The advantage of consumption, low cost etc., is researched and developed and is integrated using photon and electronics as the extensive optical circuit of the silicon substrate of information carrier Technology.Its core content is exactly to study how mutually to collect opto-electronic device " miniaturization ", " silicon chip " and with nano electron device Into, i.e., using silicon or the other materials compatible with silicon, using photon and electronics as the informational function device of carrier, formed one it is complete The whole new extensive optical circuit integrated chip with comprehensive function.

Utility model content

The technical problem to be solved by the present invention is to provide a kind of highly integrated multichannel light transmitting-receiving moulds of silicon photon chip Block and active optical cable based on advanced silicon photon chip integrated technology, provide a kind of integrated, low-power consumption, low cost 100Gbps high-speed silicon photon transceiver modules and active optical cable.

In order to solve the above-mentioned technical problem, the utility model provides a kind of highly integrated multichannel light of silicon photon chip and receives Module is sent out, silicon photon integrated chip, circuit integrated chip, assembling printed wiring board, the silicon photon integrated chip, circuit integrate Chip is integrated in the assembling printed wiring board, and the silicon photon integrated chip includes silicon photon transmitting chip and silicon photon Chip is received, the circuit integrated chip integrates transmitting chip including circuit and circuit integrates reception chip, and the circuit integrates Transmitting chip is connected by conducting wire with the silicon photon transmitting chip, and the silicon photon transmitting chip is connected to by optical patchcord On fiber active linker, the circuit integrates reception chip and is connected by conducting wire with the silicon photon acceptor chip, the silicon Photon acceptor chip is connected to by optical patchcord on the fiber active linker.

Preferably, the silicon photon transmitting chip includes：Distributed feedback laser array, Ge/Si waveguides electricity are adjusted Absorber array processed, adiabatic V-groove optical fiber fixed array；

The silicon photon acceptor chip includes：Ge waveguides photodetector array, adiabatic V-groove optical fiber fixed array；

The circuit, which integrates transmitting chip, to be included：Ge/Si electrical modulation absorb drive array, clock and data recovery CDR, mutually Mend MOS amplifier, the input of nonreturn to zero code electric rectification signal, NRZ electric rectification signal outputs；

The circuit, which integrates reception chip, to be included：Trans-impedance amplifier, clock and data recovery CDR, complementary metal oxide half Conductor amplifier, the input of NRZ signals, NRZ electric rectification signal outputs.

Preferably, the laser in the distributed feedback laser array is Ge/Si multiple quantum trap distributed Feedbacks Laser, distributed feedback laser are included successively by bottom to upper strata：Silicon substrate, silicon dioxide layer, silicon waveguide, n-type silicon connect Contact layer, intrinsic silicon layer, Ge/Si multiple quantums well layer, intrinsic silicon layer, P-type silicon contact layer, the Ge/Si multiple quantum traps of multichannel Layer direct growth on a silicon substrate, and is inverted in above silicon waveguide.

Preferably, the Ge/Si waveguides electrical modulation absorber array is compatible with cmos amplifier, single pass Ge/Si ripples The NRZ modulating frequencies of conduction modulation absorber are up to 30Gbps, and peak value extinction ratio is 7.5dB, and radio-frequency modulations bandwidth is not less than The pedestal of 40GHz, Ge/Si waveguide electrical modulation absorber is trench, is set in the upper surface of the trench there are one Ge modulators, One free end of the Ge modulators is flushed with the side of the trench, another free end and the Si bullets of the Ge modulators Short side docking, the long side of the Si bullets docks with SOI waveguides, another side of the SOI waveguides and the trench It flushes.

Preferably, the adiabatic V-groove optical fiber fixed array is integrated in the silicon photon transmitting chip or the silicon photon It receives on chip, the thermal insulation V-groove optical fiber fixed array includes several V-grooves, is all provided with that there are one SOI ripples in each V-groove It leads, every single mode optical fiber and the coupling loss of SOI waveguides are less than 1dB in V-groove.

Preferably, the Ge waveguides photodetector array is integrated on the silicon photon acceptor chip, the Ge waveguides Photodetector array is compatible with cmos amplifier, and radio frequency bandwidth is not less than 40GHz, wavelength detection scope 1270-1600nm.

Preferably, the Ge/Si electrical modulation absorbs the complementary metal that drive array is clock and data recovery CDR and 28nm Oxide semiconductor amplifier is integrated on a silicon base chip, support the NRZ electric rectification signal input functions of 4x25Gbps with And the NRZ signal output functions of 4x25Gbps.

Preferably, the trans-impedance amplifier integrated clock data recovery CDR and 28nm complementary metal oxide semiconductors are put Big device supports the NRZ signal input functions of 4x25Gbps, the NRZ electric rectification signal output functions of 4x25Gbps.

Preferably, the assembling printed wiring board integrates a miniature control chip and a DC converter, the silicon Photon integrated chip, circuit integrated chip are connected by bonding wire with routing with the assembling printed wiring board.

Preferably, a kind of active optical cable, including：Silicon photon integrated chip, circuit integrated chip, assembling printed wire Plate, 8 cores G.655 single mode optical fiber, the silicon photon integrated chip includes silicon photon transmitting chip and silicon photon acceptor chip, described Circuit integrated chip integrates transmitting chip including circuit and circuit integrates reception chip, and the circuit integrates transmitting chip by leading Line is connected with the silicon photon transmitting chip, and the silicon photon transmitting chip is connected to leather sheath optical cable by G.655 single mode optical fiber On, the circuit integrates reception chip and is connected by conducting wire with the silicon photon acceptor chip, and the silicon photon acceptor chip leads to G.655 single mode optical fiber is crossed to be connected on leather sheath optical cable；

The assembling printed wiring board integrates a miniature control chip and a DC converter, the silicon photon collection It is connected into chip, circuit integrated chip by welding with routing with assembling printed wiring board；

G.655 single mode optical fiber is passively collimated and coupled with laser array, photodetector array by adiabatic V-groove 8 cores.

The technique effect of the utility model：

1st, integrated silicon photon chip and electrical chip can be directly installed on silicon substrate substrate by the utility model, be compared It can reduce by more than 50% number of parts in the optical cable of having chance with that traditional optoelectronic component separate type produces.In addition, the utility model Involved germanium/silicon distributed feedback laser can be compatible with silicon technology and be directly given birth on a silicon substrate, compared to other silicon light The external iii-v laser used in sub- Integrated Solution can be further simplified production procedure.

2nd, the utility model causes optical transceiver module and active optical cable AOC to be able to batch, mass produce, so as to drop significantly Low cost.

Description of the drawings

Fig. 1 is the structure diagram of the optical transceiver module of the utility model.

Fig. 2 is the structure diagram of the active optical cable AOC of the utility model.

Fig. 3 is the Ge/Si multiple quantum trap Distributed Feedback Laser structure diagrams of the utility model.

Fig. 4 is the luminous frequency spectrum of the Ge/Si multichannel Distributed Feedback Lasers of the utility model.

Fig. 5 is the Ge/Si electroabsorption modulator structure diagrams of the utility model.

Fig. 6 is the adiabatic V-groove optical fiber fixed array structure schematic diagram of the utility model.

Fig. 7 is the structure diagram of the Ge/Si optical detectors of the utility model.

Fig. 8 is the response of the electricity conversion corresponding wavelength of Ge/Si optical detectors.

Fig. 9 is structure, element and the encapsulation signal of the 100Gbps multi-channel high-speed rate optical transceiver modules of the utility model Figure.

Figure 10 is structure, element and the encapsulation schematic diagram of the 100Gbps high-speeds AOC of the utility model.

101- assembles printed wiring board, 102- microcontrollers, 103- electric connection welding points, 104- aluminum conductors, 105- electricity Road integrates transmitting chip, 106- aluminum conductors, 107- silicon photon transmitting chips, 108- single-mode fiber jumpers, 109- aluminum conductors, 110- Circuit integrates reception chip, 111- aluminum conductors, 112- silicon photon acceptor chips, 113- single-mode fiber jumpers, 114-12 core MPO light Fine flexible jumper.

201- assembles printed wiring board, 202- microcontrollers, 203- electric connection welding points, 204- aluminum conductors, 205- electricity Road integrates transmitting chip, 206- aluminum conductors, 207- silicon photon transmitting chips, 208-G.655 single mode optical fibers, 209- optical cable leather sheaths, 210- aluminum conductors, 211- circuits integrate reception chip, 212- aluminum conductors, 213- silicon photon acceptor chips, 214-G.655 single-mode optics It is fine.

301- metal electrodes, 302-p type Si contact layers, the intrinsic Si buffer layers of 303-, 304-Ge/Si multiple quantum well layer, The intrinsic Si buffer layers of 305-, 306- metal electrodes, 307-n type Si contact layers, 308- silica-based waveguides, 309- silicon dioxide layers, 310- silicon substrates.

401-SOI waveguides, 402-Si bullets, 403-Ge modulators, 404- metal electrodes, 405- trench, 406- metals Electrode.

501-V type grooves, 502-SOI waveguides.

601- metal electrodes, 602- metal electrodes, 603-SiO2 buffer layers, 604- contact layers, 605- metal electrodes, 606- Absorbed layer, 607- charge layers, 608- dynode layers, 609-Si substrates, 610- metal electrodes.

701- thermally conductive sheets, 702- encapsulating housing upper covers, 703- silicon photon chip and circuit integrated chip unit, 705- assemblings Printed wiring board, 707- encapsulating housing lower covers, 708-G.655 single-mode fiber jumpers, 709-12 core MPO connectors, 710- encapsulation Housing tail-hood.

801- thermally conductive sheets, 802- encapsulating housing upper covers, 803- silicon photon integrated chip and circuit integrated chip unit, 804- Draw ring, 806- assembling printed wiring board, 808- encapsulating housing lower covers, 809-G.655 single mode optical fibers, 810- optical cable fixation kits, 811- encapsulating housing tail-hoods.

Specific embodiment

The utility model is described in further detail in the following with reference to the drawings and specific embodiments, so that those skilled in the art The utility model may be better understood and can be practiced, but illustrated embodiment is not as the restriction to the utility model.

Embodiment

In the present embodiment, a kind of highly integrated multichannel optical transceiver module of silicon photon chip is disclosed, including：Silicon photon Integrated chip, circuit integrated chip, assembling printed wiring board 101, the silicon photon integrated chip, circuit integrated chip are integrated In the assembling printed wiring board 101, the assembling printed wiring board 101 integrates a miniature control chip 102 and one DC converter, and also having several electric connection welding points 103 above, the silicon photon integrated chip emits including silicon photon Chip 107 and silicon photon acceptor chip 112, the circuit integrated chip integrates transmitting chip 105 including circuit and circuit integrates Chip 110 is received, the circuit integrates transmitting chip 105 and is connected by aluminum conductor 106 with the silicon photon transmitting chip 107, The silicon photon transmitting chip 107 is connected to fiber active linker (12 cores by optical patchcord (single-mode fiber jumper 108) MPO fiber active linkers) on, the circuit integrates reception chip 110 and passes through aluminum conductor 111 and the silicon photon acceptor chip 112 connections, the silicon photon acceptor chip 112 are connected to the optical fibre by optical patchcord (single-mode fiber jumper 1113) On connector.

There are several electric connection welding points 103 on above-mentioned optical transceiver module, circuit integrates transmitting chip 105 and also passes through aluminium Conducting wire 104 is integrated in assembling printed wiring board 101, is integrated likewise, circuit integrates reception chip 110 by aluminum conductor 109 In assembling printed wiring board 101.

In the present embodiment, the silicon photon transmitting chip includes：Distributed feedback laser array, Ge/Si waveguides Electrical modulation absorber array, adiabatic V-groove optical fiber fixed array；The silicon photon acceptor chip includes：Ge waveguide photodetections Device array, adiabatic V-groove optical fiber fixed array；The circuit, which integrates transmitting chip, to be included：Ge/Si electrical modulation absorbs driver battle array Row, clock and data recovery CDR, complementary metal oxide semiconductor amplifier, the input of nonreturn to zero code electric rectification signal, NRZ electricity are whole Flow signal output；The circuit, which integrates reception chip, to be included：Trans-impedance amplifier, clock and data recovery CDR, complementary metal oxide Semiconductor amplifier, the input of NRZ signals, NRZ electric rectification signal outputs.

Light emitting end includes silicon photon transmitting chip 107, and circuit integrates transmitting chip 105, this two chips is led by aluminium 106 routing of line connects；Optical receiving end includes silicon photon acceptor chip 112, and circuit, which integrates, receives chip 110, this two chips is led to Cross the connection of 111 routing of aluminum conductor.Transmitting terminal circuit integrated chip is connected by aluminum conductor 104 with silicon substrate routing, receiving terminal electricity Road integrated chip is connected by aluminum conductor 109 with silicon substrate routing.

As shown in Fig. 2, active optical cable structure includes：Silicon photon integrated chip, circuit integrated chip, assembling printed wiring board 201st, G.655 single mode optical fiber, the silicon photon integrated chip include silicon photon transmitting chip 207 and silicon photon acceptor chip to 8 cores 213, the circuit integrated chip integrates transmitting chip 205 including circuit and circuit integrates and receives chip 211, and the circuit integrates Transmitting chip 205 is connected by aluminum conductor 206 with the silicon photon transmitting chip 207, and the silicon photon transmitting chip 207 passes through G.655 single mode optical fiber 208 is connected on leather sheath optical cable 209, and the circuit integrates reception chip 211 and passes through aluminum conductor 212 and institute It states silicon photon acceptor chip 213 to connect, the silicon photon acceptor chip 213 is connected to leather sheath light by G.655 single mode optical fiber 214 On cable 209.

Circuit integrates transmitting chip 205 and is also integrated in by aluminum conductor 204 in assembling printed wiring board 201, likewise, electric Road integrates reception chip 211 and is integrated in by aluminum conductor 210 in assembling printed wiring board 201.

The assembling printed wiring board 201 integrates a miniature control chip 202 and a DC converter, and upper There is several electric connection welding points 203 in face, and the silicon photon integrated chip, circuit integrated chip pass through welding and routing and group Dress printed wiring board 201 connects；G.655 single mode optical fiber passes through adiabatic V-groove and laser array, photodetector array quilt to 8 cores Dynamic collimation coupling.

Shown in Figure 3, the laser (DFB) in the distributed feedback laser array is Ge/Si multiple quantum traps Distributed feedback laser, distributed feedback laser are included successively by bottom to upper strata：Silicon substrate 310, silicon dioxide layer 309th, silicon waveguide, n-type silicon contact layer, intrinsic silicon layer, Ge/Si multiple quantums well layer, intrinsic silicon layer, P-type silicon contact layer, multichannel Ge/Si multiple quantum well layer be grown directly upon on silicon substrate, and be inverted in above silicon waveguide.

Specifically, as shown in figure 3, DFB is multiple quantum trap structure, that is, optical gain medium of stacked, superstructure is P-type semiconductor layer, interlayer are Ge/Si multiple quantums well layer 304, and lower floor is n-type semiconductor layer 307.P-type semiconductor layer, from Include under above：One p-type Si contact layer 302, thickness are 0.2 μm, boron (chemical formula：B) doping concentration is 1x1019cm-3； One intrinsic Si buffer layer 303, thickness are 0.1 μm.Ge/Si multiple quantums well layer 304, includes from top to bottom：20 identical Quantum well layer, each quantum well layer contains 7 Ge monoatomic layers, wherein phosphorus (chemical formula：P) doping concentration is 1x1018cm- 3 and intrinsic Si separation layers that thickness is 17nm.N-type semiconductor layer includes from top to bottom：One intrinsic Si buffer layer 305, thickness is 0.1 μm；One n-type Si contact layer 307, thickness are 0.2 μm, and P doping concentrations are 1x1019cm-3.Light increases Beneficial medium is directly bonded with silica-based waveguides 308, so as to the light-output gain media that will be excited.

Also, there are metal electrode 301 and metal electrode 306 in DFB, above-mentioned metal electrode 301 and metal electrode 306 divide The both ends of n-type Si contact layers 307 are not arranged on.

Further, the making step of Ge/Si multichannels Distributed Feedback Laser is as described below：

Step 1 utilizes standard projection photoetching technique and chlorine/argon gas/hydrogen bromide (chemical formula：) etc. Cl2/Ar/HBr from Daughter reactive ion beam etching technique (English name：Plasma and Reactive Ion Etching, referred to as：PRIE) exist Si waveguiding structures are prepared on undoped SOI substrate (100) crystal face, the height of Si waveguides is 0.76 μm, and width is 2.5 μm.

Step 2 utilizes ultra-high vacuum CVD method (English name：Ultra-HighVacuumChemical Vapor Deposition, referred to as:UHV-CVD) on a si substrate grow one layer of 0.1 μ m thick intrinsic Si buffer layers, and 20 layers of multiple quantum well layer are progressively grown above buffer layer.Each quantum well layer contains 7 Ge monoatomic layers and a thickness is The intrinsic Si separation layers of 17nm, growth course temperature are controlled respectively in 520 DEG C and 580 DEG C, growth rate 0.0056nm/s.

Step 3, by Ge/Si multiple quantum well layer back bondings in SOI waveguides.

Step 4 deposits nickel aluminum (chemical formula on a si substrate：Ni/Al) metal layer forms metal electrode 301, metal electricity Pole 306.

In the present embodiment, above-mentioned laser is made of optical gain medium and SOI waveguides, wherein optical gain medium by Ge/Si multiple quantum traps form, including Si layers of p-type, intrinsic layer si layer, Ge/Si multiple quantums well layer, intrinsic layer si layer.Si is indirect Gap semiconductor, photoelectric conversion need the participation of phonon, this so that the luminous efficiency of Si is not high.However Ge possesses pseudo- direct band Gap semiconductor structure, therefore it has many advantages in terms of photoelectric characteristic compared to Si.Ge has electronics more higher than Si and sky Cave mobility：The mobility in Ge electronics and hole is respectively 3900cm2V-1s-1 and 1900cm2V-1s-1, and the electronics of Si and Hole mobility is only 1417cm2V-1s-1 and 471cm2V-1s-1.On the other hand, Ge is as IV races element, between Si Lattice mismatch than be only 4.2%, this so that it possesses the characteristic completely compatible with Si techniques, compared to traditional iii-v Element laser device is more suitable for silicon integreted phontonics, therefore Ge is the excellent selection of silicon photon chip lasing light emitter.Ge/Si multiple quantums The direct upside-down mounting of trap DFB arrays is grown in SOI waveguides, launches laser, laser by Si layers of the p-type at external electrical field excitation top Power amplification is obtained in the gain medium, is then directed in the SOI waveguides of bottom, and is emitted from transmitting terminal.

The working performance performance of the Ge/Si multichannels DFB, it is shown in Figure 4.Its cardiac wave is grown near 1550nm, Spectral width is less than 0.3nm, and average emitted luminous power is 40mW.

By changing the doping concentration of quantum well layer, the center emission wavelength of the laser can be adjusted.In addition, the laser Good linear effect is presented with bias current in the transmitting luminous power of device.

As shown in figure 5, the Ge/Si waveguides electrical modulation absorber array is compatible with cmos amplifier, single pass Ge/Si The NRZ modulating frequencies of waveguide electrical modulation absorber reach 30Gbps, and peak value extinction ratio is 7.5dB, and radio-frequency modulations bandwidth is not less than The pedestal of 40GHz, Ge/Si waveguide electrical modulation absorber is trench 405, and in the upper surface of the trench 405, there are one Ge for setting Modulator 403, a free end of the Ge modulators 403 are flushed with the side of the trench 405, the Ge modulators 403 Another free end is docked with the short side of Si bullets 402, and the long side of the Si bullets 402 is docked with SOI waveguides 401, described SOI waveguides 401 are flushed with another side of the trench 405.There are two 404 Hes of metal electrode on above-mentioned trench 405 Metal electrode 405, metal electrode 404 and metal electrode 405 are separately positioned on the both sides of Ge modulators 403.

The break-make of light is controlled by voltage in Ge/Si electroabsorption modulators, and electricity can be changed into during voltage by light by having, so as to block light By the way that without being exactly waveguide during voltage, light can pass freely through.

The structural principle of Ge/Si electroabsorption modulators, it is shown in Figure 5.It can be to logical using the direct band gap migration of germanium The light of news wave-length coverage is effectively modulated, and modulation principle is based on its-Ke Erdeshi effect (English name of Forlan： Franz-Keldysh Effect).The modulation rate of the Ge/Si electroabsorption modulators is up to 30GHz, in 1510- Its Insertion Loss value and extinction ratio are respectively 2.5dB to 5dB and 4dB to 7.5dB in 1640nm wave-length coverages.In addition, Ge/Si electricity is inhaled The dynamic power consumption for receiving modulator is 100fJ/bit, and the power consumption in the case where modulation rate is 25Gbps operating conditions is 2.5mW.

Further, the making step of Ge/Si electroabsorption modulators is as described below：

Step 1 etches the Si bullets 402 that a height is 3 μm in SOI wafer, and the selection region extension for being Ge is given birth to Length is prepared.

Step 2, grows the Ge buffer layers that a layer thickness is 100nm in recess region, and growth temperature is 400 DEG C；It Afterwards, the Ge layers that a layer thickness is 3 μm are grown under 670 DEG C of temperature conditionss.

Step 3 makes the Ge waveguides and a SOI waveguide 401 that a height is 2.4 μm using PRIE.

Step 4 adulterates B and P, doping concentration 1x1018cm in Ge waveguides^-3, so as to form the p-i-n of a transverse direction Structure is Ge modulators 403.

Step 5, deposition growing titanium/aluminium (chemical formula in doped region：Ti/Al) metal layer, as metal electrode 404, Metal electrode 406, the contact electrode as p-type layer with n-layer.

It is shown in Figure 6, the adiabatic V-groove optical fiber fixed array involved in the present embodiment is illustrated, the thermal insulation V Type groove optical fiber fixed array is integrated on the silicon photon transmitting chip or the silicon photon acceptor chip, the thermal insulation V-groove Optical fiber fixed array includes several V-grooves 501, is all provided in each V-groove 501 there are one SOI waveguides 502, every in V-groove 501 Root single mode optical fiber and the coupling loss of SOI waveguides 502 are less than 1dB.V-type is etched on a silicon substrate using standard projection photoetching technique Groove, the position of V-type groove are accurately aligned with 502 array of SOI waveguides that DFB arrays and photodetector array couple, Alignment precision in horizontal direction is ± 5nm.Optical fiber can be directly embedded into V-groove 501 and passively accurate with 502 array of SOI waveguides Straight coupling, optical fiber and the coupling loss of SOI waveguides 502 are less than 1dB in 1510nm to 1570nm wave-length coverages.

Adiabatic V-groove optical fiber fixed array docks growth with SOI waveguides, can passively collimate be emitted in SOI waveguides swash Light is simultaneously coupled into optical fiber.Its main feature is that：Spot size can be adjusted to optimum value by build-in module converter so that The coupling loss of Si waveguides and fiber array reduces.After tested, every G.655 single mode optical fiber in adiabatic V-groove insertion damage Consumption is less than 1dB.

The structural principle of the Ge/Si optical detectors, it is shown in Figure 7.Its making step is as described below：Step 1, The intrinsic Si current multiplications layer 608 that a layer thickness is 0.7 μm is grown on Si substrates 609 using UHV-CVD, wherein P doping is dense It spends for 1x1016cm-3；Step 2, using UHV-CVD in the p-type Si electricity that current multiplication layer disposed thereon a layer thickness is 0.1 μm Lotus layer 607, wherein B doping concentrations are 1.6x1017cm-3；Step 3, using UHV-CVD in one thickness of charge layer disposed thereon The intrinsic Ge absorbed layers 606 for 1 μm are spent, wherein P doping concentrations are 1x1016cm-3；Step 4, using UHV-CVD in absorbed layer Disposed thereon a layer thickness is 0.2 μm of p-type Ge contact layers 604, and wherein B doping concentrations are 1x1018cm-3.Step 5 is being inhaled One layer of SiO2 buffer layer 603 of growth above layer is received, and distinguishes depositing Ti/Al metal layers at the both ends of p-i-n structure, forms gold Belong to electrode 601, metal electrode 602, metal electrode 605, metal electrode 610.

The working performance performance of the Ge/Si optical detectors, with reference to shown in Fig. 8.There is higher photoelectric conversion to imitate for it Rate：When bias voltage is 4V, it 1310nm and 1550nm wavelength windows optoelectronic transformation efficiency respectively up to 0.91A/W and 1.14A/W；The speed of response of superelevation can support 40Gb/s message transmission rates, and responsive bandwidth is up to 33.6GHz.In addition, the device Good linear growth trend is presented in 1280nm to 1580nm wavelength windows in the electricity conversion of part.

It is shown in Figure 9, the component and its packaged type of the optical transceiver module involved by the present embodiment are illustrated.

The unit 703 for being integrated with silicon photon chip and circuit integrated chip is welded to assembling printed wiring board by step 1 On 705.

Thermally conductive sheet 701 is attached on silicon photon chip and circuit integrated chip unit 703 by step 2.

G.655, step 3 will carry out stripping, one end insertion silicon photon chip transmitting terminal and reception by single-mode fiber jumper 708 In the adiabatic V-groove optical fiber fixed array at end, the other end is inserted into 12 core MPO fiber active linkers 709.

Assembling printed wiring board 705 is placed into encapsulating housing lower cover 707 by step 4, and is capped on upper encapsulating housing Lid 702 and encapsulating housing tail-hood 710.

Further, it is shown in Figure 10, the component and its packaged type of the AOC involved by the utility model are said It is bright.

The unit 803 for being integrated with silicon photon chip and circuit integrated chip is welded to assembling printed wiring board by step 1 On 806.

Thermally conductive sheet 801 is attached on silicon photon chip and circuit integrated chip unit 803 by step 2.

G.655, step 3 will carry out stripping, one end insertion silicon photon chip transmitting terminal and reception by 809 wire jumper of single mode optical fiber In the adiabatic V-groove optical fiber fixed array at end, in other end insertion optical cable fixation kit 810.

Assembling printed wiring board 806 is placed into encapsulating housing lower cover 808 by step 4, and is capped on upper encapsulating housing Lid 802, encapsulating housing tail-hood 811, draw ring 804.

Embodiment described above is only the preferred embodiment to absolutely prove the utility model and being lifted, the utility model Protection domain it is without being limited thereto.The equivalent substitute or change that those skilled in the art are made on the basis of the utility model It changes, within the scope of protection of the utility model.The scope of protection of the utility model is subject to claims.

Claims (10)

1. a kind of highly integrated multichannel optical transceiver module of silicon photon chip, which is characterized in that it includes：Silicon integreted phontonics core Piece, circuit integrated chip, assembling printed wiring board, the silicon photon integrated chip, circuit integrated chip are integrated in described group It fills in printed wiring board, the silicon photon integrated chip includes silicon photon transmitting chip and silicon photon acceptor chip, the circuit Integrated chip including circuit integrates transmitting chip and circuit integrates reception chip, the circuit integrate transmitting chip by conducting wire with The silicon photon transmitting chip connection, the silicon photon transmitting chip are connected to by optical patchcord on fiber active linker, The circuit integrates reception chip and is connected by conducting wire with the silicon photon acceptor chip, and the silicon photon acceptor chip passes through light Fine wire jumper is connected on the fiber active linker.

2. the highly integrated multichannel optical transceiver module of silicon photon chip as described in claim 1, which is characterized in that the silicon light Sub- transmitting chip includes：Distributed feedback laser array, Ge/Si waveguide electrical modulation absorbers array, adiabatic V-groove light Fine fixed array；

The silicon photon acceptor chip includes：Ge waveguides photodetector array, adiabatic V-groove optical fiber fixed array；

The circuit, which integrates transmitting chip, to be included：Ge/Si electrical modulation absorbs drive array, clock and data recovery CDR, complementary gold Belong to oxide semiconductor amplifier, the input of nonreturn to zero code electric rectification signal, NRZ electric rectification signal outputs；

The circuit, which integrates reception chip, to be included：Trans-impedance amplifier, clock and data recovery CDR, complementary metal oxide semiconductor Amplifier, the input of NRZ signals, NRZ electric rectification signal outputs.

3. the highly integrated multichannel optical transceiver module of silicon photon chip as claimed in claim 2, which is characterized in that the distribution Laser in formula feedback laser array is Ge/Si multiple quantum trap distributed feedback lasers, distributed feedback laser Included successively by bottom to upper strata：Silicon substrate, silicon dioxide layer, silicon waveguide, n-type silicon contact layer, intrinsic silicon layer, Ge/Si are multiple Quantum well layer, intrinsic silicon layer, P-type silicon contact layer, the Ge/Si multiple quantum well layer of multichannel are grown directly upon on silicon substrate, and It is inverted in above silicon waveguide.

4. the highly integrated multichannel optical transceiver module of silicon photon chip as claimed in claim 2, which is characterized in that the Ge/ Si waveguide electrical modulation absorber arrays are compatible with cmos amplifier, the NRZ modulation of single pass Ge/Si waveguides electrical modulation absorber Frequency reaches 30Gbps, and peak value extinction ratio is 7.5dB, and radio-frequency modulations bandwidth is not less than 40GHz, Ge/Si waveguide electrical modulation absorbers Pedestal for trench, set that there are one Ge modulators, a free end of the Ge modulators and institutes in the upper surface of the trench The side for stating trench flushes, and another free end of the Ge modulators is docked with the short side of Si bullets, the Si bullets Long side is docked with SOI waveguides, and the SOI waveguides are flushed with another side of the trench.

5. the highly integrated multichannel optical transceiver module of silicon photon chip as claimed in claim 2, which is characterized in that the thermal insulation V-groove optical fiber fixed array is integrated on the silicon photon transmitting chip or the silicon photon acceptor chip, the thermal insulation V-groove Optical fiber fixed array includes several V-grooves, is all provided in each V-groove there are one SOI waveguides, in V-groove every single mode optical fiber with The coupling loss of SOI waveguides is less than 1dB.

6. the highly integrated multichannel optical transceiver module of silicon photon chip as claimed in claim 2, which is characterized in that the Ge ripples It leads photodetector array to be integrated on the silicon photon acceptor chip, the Ge waveguides photodetector array amplifies with CMOS Device is compatible with, and radio frequency bandwidth is not less than 40GHz, wavelength detection scope 1270-1600nm.

7. the highly integrated multichannel optical transceiver module of silicon photon chip as claimed in claim 2, which is characterized in that the Ge/ Si electrical modulation absorbs the complementary metal oxide semiconductor amplifier that drive array is clock and data recovery CDR and 28nm and integrates On a silicon base chip, the NRZ electric rectification signal input functions of 4x25Gbps and the NRZ signal outputs of 4x25Gbps are supported Function.

8. the highly integrated multichannel optical transceiver module of silicon photon chip as claimed in claim 2, which is characterized in that described across resistance Amplifier integrated clock data recover CDR and 28nm complementary metal oxide semiconductor amplifiers, and the NRZ of 4x25Gbps is supported to believe Number input function, the NRZ electric rectification signal output functions of 4x25Gbps.

9. the highly integrated multichannel optical transceiver module of silicon photon chip as described in claim 1, which is characterized in that the assembling Printed wiring board integrates a miniature control chip and a DC converter, and the silicon photon integrated chip, circuit integrate core Piece is connected by bonding wire with routing with the assembling printed wiring board.

10. a kind of active optical cable, which is characterized in that it includes：Silicon photon integrated chip, circuit integrated chip, assembling track G.655 single mode optical fiber, the silicon photon integrated chip include silicon photon transmitting chip and silicon photon acceptor chip, institute for road plate, 8 cores State that circuit integrated chip integrates transmitting chip including circuit and circuit integrates reception chip, the circuit integrates transmitting chip and passes through Conducting wire is connected with the silicon photon transmitting chip, and the silicon photon transmitting chip is connected to leather sheath light by G.655 single mode optical fiber On cable, the circuit integrates reception chip and is connected by conducting wire with the silicon photon acceptor chip, the silicon photon acceptor chip It is connected to by G.655 single mode optical fiber on leather sheath optical cable；

The assembling printed wiring board integrates a miniature control chip and a DC converter, the silicon integreted phontonics core Piece, circuit integrated chip are connected by welding with routing with assembling printed wiring board；

G.655 single mode optical fiber is passively collimated and coupled with laser array, photodetector array by adiabatic V-groove 8 cores.