CN103457156A - Large coupling alignment tolerance semiconductor laser chip applied to high-speed parallel optical transmission and photoelectric device thereof - Google Patents
Large coupling alignment tolerance semiconductor laser chip applied to high-speed parallel optical transmission and photoelectric device thereof Download PDFInfo
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- CN103457156A CN103457156A CN2013103941290A CN201310394129A CN103457156A CN 103457156 A CN103457156 A CN 103457156A CN 2013103941290 A CN2013103941290 A CN 2013103941290A CN 201310394129 A CN201310394129 A CN 201310394129A CN 103457156 A CN103457156 A CN 103457156A
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Abstract
The invention discloses a large coupling alignment tolerance semiconductor laser chip applied to high-speed parallel optical transmission and a photoelectric device thereof. The chip is formed by a semiconductor active area and a semiconductor passive area, a semiconductor laser is arranged on the active area, an electrode of the active area is connected with a laser driver and a modulator, and the semiconductor passive area is formed by passive optical waveguide. The photoelectric device is a photoelectric device with the transmission rate of 100Gb/s or 400Gb/s. The large coupling alignment tolerance semiconductor laser chip and the photoelectric device have the advantages that restriction to a cleavage process is not needed, the length of the active area of the semiconductor laser can be correspondingly designed according to the needed modulation bandwidth of the laser chip to reduce a parasitic parameter to increase the modulation bandwidth of the laser chip, passive optical waveguide with an optical field mode switching function is led in to increase the length of the whole laser chip, a standard semiconductor process can be adopted to manufacture the chip and the photoelectric device, and increasing of the alignment optical coupling tolerance also guarantees optical coupling efficiency of the laser chip; the large coupling alignment tolerance semiconductor laser chip and the photoelectric device are small in size, low in power consumption and cost, high in integration degree and the like.
Description
Technical field
The present invention relates to chip of laser and integrated optoelectronic device in a kind of high speed optical communication system, relate in particular to the high speed semiconductor laser chip of the tolerance that is coupled and aligned greatly that ultrahigh speed, vast capacity optical-fiber network use, belong to the optical network communication field.
Background technology
The market demand that bring in the fields such as mobile Internet, cloud computing, Internet of Things, data center of future generation, the demand of business to the network bandwidth more accelerated in the deployment of cloud computing, constantly mutual mass data needs more powerful data center, the higher network bandwidth, and the scale in data center market is also constantly increasing with 40% speed always.At present, the whole world equipment supplier and producer have dropped into ample resources, and to go to develop transmission rate be 40Gb/s, 100Gb/s even 400Gb/s optical communication network technology and product, as one of key technology of ultrahigh speed, vast capacity optical-fiber network, 40Gb/s and 100Gb/s Communication ray electronic chip and opto-electronic device, towards integrated, high bandwidth, small size, low-power consumption, future development cheaply, have become the focus of domestic and international exploitation and investment.
Yet, in order to realize higher speed or bandwidth, usually require to improve operating rate and the modulation bandwidth of semiconductor laser chip, the corresponding capacitive reactance that just requires very big reduction chip of laser, comprise and reduce parasitic capacitance etc., but this has directly caused the length of optical chip to reduce, the technique by cleavage in current industry just is difficult to realize being less than the optical chip of 150 microns length.And due to diminishing of optical chip size, it also becomes expensive in requisition for the process equipment used, the PROCESS FOR TREATMENT complexity, the heat radiation of optical chip itself and crosstalk and also become technical barrier, these industry technology difficult problems have directly restricted the development of ultrahigh speed, vast capacity optical-fiber network.
How the urgent market demand based on these, and the technical difficulty that industry runs at present, find a kind of solution of high speed semiconductor laser chip to become current optical chip and optical device manufacture supplier's the task of top priority.
Summary of the invention
The object of the invention is to solve above-mentioned technical problem, propose a kind of be coupled and aligned greatly tolerance semiconductor laser chip and photoelectric device thereof that is applied to the high-speed parallel optical transmission.
Purpose of the present invention will be achieved by the following technical programs:
Be applied to the tolerance semiconductor laser chip that is coupled and aligned greatly of high-speed parallel optical transmission, be arranged on substrate, described chip consists of semiconductor active region and passive semiconductor district, be provided with semiconductor laser on described active area, be connected with Laser Driven and modulator on the electrode of described active area, described passive semiconductor district consists of passive optical waveguide.
Preferably, described semiconductor laser is distributed Bragg reflector semiconductor laser chip, Electroabsorption Modulated Laser or fabry-Perot type laser.
Preferably, the described tolerance semiconductor laser chip that is coupled and aligned greatly is that monolithic is integrated.
Apply the photoelectric device of the described tolerance semiconductor laser chip that is coupled and aligned greatly, be provided with the tolerance semiconductor laser chip that is coupled and aligned greatly of multidiameter delay light transmission in described photoelectric device, described photoelectric device transmission rate is 100Gb/s or 400Gb/s.
Beneficial effect of the present invention is mainly reflected in: utilize the semiconductor active region of contraction in length realize sending out lase and improve high-frequency work, at active area exiting surface single-slice integrated semiconductor passive region, this passive region has fiber waveguide, can realize that by the elliptical light mode-conversion of laser emission be the circular light pattern, increase the coupling tolerance of output light.Active area and passive region monolithic are integrated on same substrate, both guaranteed the high frequency characteristics of small size active area, simultaneously, the passive region increased is under the prerequisite that does not change high frequency characteristics, increase again the size of whole optical chip, the alignment tolerance of raising optical coupling, avoided using high accuracy and complicated process equipment.
The accompanying drawing explanation
Fig. 1 is the high speed semiconductor laser chip structure schematic diagram with large optical coupling tolerance;
Fig. 2 is that the long theory in laser modulation bandwidth and chamber is calculated schematic diagram;
Fig. 3 is the simulation result schematic diagram that passive optical waveguide is realized the conversion of light field pattern;
The semiconductor laser chip example schematic diagram of Fig. 4 for adopting the inventive method to realize;
The semiconductor laser chip material stack structure example schematic diagram of Fig. 5 for adopting the inventive method to realize;
The 100Gb/s photoelectric device schematic diagram of Fig. 6 for adopting the inventive method to realize.
Embodiment
For the purpose, technical scheme and the advantage that make patent of the present invention is clearer, below in conjunction with drawings and Examples, patent of the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain patent of the present invention, is not intended to limit the present invention patent.
The technical scheme that patent of the present invention adopts as shown in Figure 1, comprising: semiconductor laser chip active area 110, passive region 109.Have the high speed semiconductor laser chip 100 that the optical coupling alignment tolerance is large, monolithic is integrated on same substrate 106, and substrate 106 can be indium phosphide substrate or other semiconductor chip.
The passive optical waveguide in passive semiconductor district can have the function of light field pattern conversion, and purpose is in the length that increases whole chip of laser, improves optical registration tolerance and coupling efficiency; Certainly, also can not there is the function of light field pattern conversion, just increase the length of whole chip of laser.
The laser 104 of active area is distributed Bragg reflector semiconductor laser (DFB-LD) chip, and according to different application, laser 104 can be also Electroabsorption Modulated Laser (EML) or other laser.Add electric current pumping and electrical data signal number modulation by the electrode 103 on active area 110, the sharp light modulated 105 of penetrating produced is by direct optical coupling or vertical light coupling, realize that part light enters into passive optical waveguide 102: passive optical waveguide 102 is the passive optical waveguides with grading structure, enter into sharp light field pattern of penetrating light modulated 105 wherein, can in transmitting procedure, from the elliptical light field mode, become the circular light field mode, finally, by end face 108 outputs that are coated with anti-reflection film, form the output light modulated 107 of optical mode conversion.
In order to realize the high speed operation of chip of laser, chip of laser need to reduce the length of active area as far as possible to reduce corresponding capacitive reactance, usually industry adopts cleavage technique to obtain the chip length of expectation, but cleavage technique can't realize being less than the chip length of 150 microns at present, has so just limited operating rate and the modulation bandwidth of chip of laser.Chip of laser 104 of the present invention consists of active area 110, passive region 109, and without being limited to current cleavage technique, the length of active area 110 can operating rate and modulation bandwidth as required be designed to desired size.By introducing single chip integrated passive region 109, the length of whole chip of laser 100 is elongated, easily meets the requirement of current cleavage technique.
For the current-modulation semiconductor laser chip, in order to improve its operating rate and modulation bandwidth, except improving laser itself inner photon concentration and differential gain coefficient, also to reduce the impact of the parasitic factor of electricity of laser, these electricity parasitic parameters mainly comprise parasitic capacitance, series resistance and lead-in inductance etc., especially need to reduce parasitic capacitance and the transport process of charge carrier in quantum well structure, it is basic that these factors play a part the restriction of laser modulation bandwidth.The existence of parasitic capacitance has limited Injection Current and has entered active area, thereby has caused the reduction of differential gain coefficient under the high frequency.Therefore, reduce long photon lifetime, the raising differential gain coefficient that not only can reduce laser in chamber, and can reduce the impact of the electricity parasitic parameters such as parasitic capacitance.
Fig. 2 has shown the relation of theoretical calculating for semiconductor laser chip modulation bandwidth and effective cavity length, can find out that its operating rate and modulation bandwidth can be along with the shortenings of the effective cavity length of semiconductor laser chip and improve.But the long maximum Output optical power that can limit laser of shorter semiconductor laser cavity in actual applications.In order to reach the Output optical power needed, shorter chamber is long can need higher drive current concentration, the thermal effect that higher drive current concentration produces limits maximum modulation bandwidth conversely, therefore, the chamber of semiconductor laser is long can not infinitely shorten, and needs in practice compromise consideration.
In conjunction with Fig. 3, meaned that in the high speed semiconductor laser chip, passive region is realized the simulation result that the light field pattern is changed: the passive optical waveguide 201 that is arranged in passive region 200 can be produced on (for example indium phosphide substrate) on Semiconductor substrate 205 by semiconductor technologies such as etchings.According to the difference of application, passive optical waveguide 201 can be grading structure, also can be vertical stratification etc.Here, take grading structure as example, whole passive optical waveguide 201, be gradient to bright dipping end 204 from the light inlet 203 of the side tangent plane 202 of passive optical waveguide, the incident light with elliptical light field mode 206 transmitted therein, after this passive optical waveguide 201, its light field pattern becomes large circular light field mode 207.The conversion of this light field pattern can greatly improve the output optical coupling alignment tolerance of chip of laser and improve coupling efficiency.The output light of semiconductor laser chip need to be coupled in optical fiber or fiber waveguide usually, that the output light of semiconductor laser chip has usually is little, ellipse or flat light field pattern, but optical fiber or fiber waveguide have large, circular light field mode, therefore semiconductor laser chip and optical fiber or fiber waveguide are directly carried out to optical coupling, its optical registration tolerance is little and coupling efficiency is very low.Adopted this method, the output light of semiconductor laser chip has and optical fiber or the similar light field pattern of fiber waveguide, has therefore greatly improved the output optical coupling alignment tolerance of chip of laser and has improved coupling efficiency.
Fig. 4 has meaned to adopt the energy of realizing in the present invention to meet 10 kilometers transmission application of Ethernet for 100GbE LR4(, 4X25G) a kind of semiconductor laser chip of photoelectric device, this 100GbE LR4 photoelectric device requires the semiconductor laser that uses 4 modulation bandwidths to reach 28GHz to close light formation by wave division multiplex mode.In order to realize the 28GHz semiconductor laser chip of single mode operation, the exemplifying embodiment that the present invention proposes utilizes distributed Bragg reflector semiconductor laser principle to realize single mode operation, reduce active area length to realize the 28GHz modulation bandwidth, introduce the passive optical waveguide of grading structure and realize the conversion of output light field pattern.Semiconductor laser chip 300, integrated at substrate 303 monolithics by active area 307 and passive region 308: the length of active area 307 is less than 150 microns, and whole semiconductor laser chip length is 200 microns.By add electric current pumping and current-modulation on electrode 304, modulated light signal can encourage generation in active area waveguide 305, and distributed Bragg grating 306 has been guaranteed the single mode operation of modulated light signal; Single module lasing light signal enters into the passive optical waveguide 302 of grading structure, and the light field pattern becomes large and round light signal, by end face 301 outputs that are coated with anti-reflection film.
Fig. 5 has meaned the corresponding material stack structure figure of institute's example semiconductor laser: the material stack structure 400 of this semiconductor laser comprises the substrate 403 that uses N-shaped indium phosphide (n-InP) material, the covering 401 of p-type indium phosphide (p-InP), intermediate seemingly sandwich structure clips active quantum well region 404 and passive optical waveguide district 402.The benefit of this material stack structure is to realize by an epitaxial growth, the monolithic that is formed with source region and passive region by techniques such as etchings is integrated, after the chip waveguide is made technique and is completed, also only need an epitaxial growth realize clad material, whole semiconductor laser chip make simple and reliable process.
Fig. 6 has meaned the 100GbE LR4 photoelectric device that 4 semiconductor laser chips of employing patent example of the present invention are realized: in this photoelectric device 500,4 modulation bandwidths reach the semiconductor laser chip 501 of 28GHz by sharp four the wavelength l of ejaculation of active area 502
1, l
2, l
3, l
4these light signals adopt the 25Gb/s electric current directly to modulate data message is loaded up, then realize the conversion of output light field pattern by passive waveguide region 503, there is similar light field pattern with wavelength-division recovery by the fiber waveguide 505 in 504, thereby realize the raising of optical registration tolerance, can adopt standard technology equipment to carry out the aligning of light, thereby realize the raising of coupling efficiency.Four wavelength l
1, l
2, l
3, l
4light modulating signal after 504 close light, realize the light modulating signal output 508 of 100GbE by being welded on light receiving device 506 on photoelectric device housing 507.
Claims (4)
1. be applied to the tolerance semiconductor laser chip that is coupled and aligned greatly of high-speed parallel optical transmission, be arranged on substrate, it is characterized in that: described chip consists of semiconductor active region and passive semiconductor district, be provided with semiconductor laser on described active area, be connected with Laser Driven and modulator on the electrode of described active area, described passive semiconductor district consists of passive optical waveguide.
2. the tolerance semiconductor laser chip that is coupled and aligned greatly that is applied to high-speed parallel optical transmission as claimed in claim 1, it is characterized in that: described semiconductor laser is distributed Bragg reflector semiconductor laser, Electroabsorption Modulated Laser or fabry-Perot type laser.
3. the tolerance semiconductor laser chip that is coupled and aligned greatly that is applied to high-speed parallel optical transmission as claimed in claim 1, it is characterized in that: the described tolerance semiconductor laser chip that is coupled and aligned greatly is that monolithic is integrated.
4. apply the photoelectric device that is applied to the tolerance semiconductor laser chip that is coupled and aligned greatly of high-speed parallel optical transmission as claimed in claim 1, it is characterized in that: be provided with the tolerance semiconductor laser chip that is coupled and aligned greatly that is applied to the high-speed parallel optical transmission in described photoelectric device, described photoelectric device transmission rate is 100Gb/s or 400Gb/s.
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Cited By (6)
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| CN106785916A (en) * | 2017-02-27 | 2017-05-31 | 武汉光迅科技股份有限公司 | A kind of Electroabsorption Modulated Laser and its manufacture method |
| CN107046228A (en) * | 2017-04-07 | 2017-08-15 | 华南师范大学 | A kind of Electroabsorption Modulated Laser and preparation method thereof |
| CN111541149A (en) * | 2020-05-15 | 2020-08-14 | 陕西源杰半导体技术有限公司 | 10G anti-reflection laser and preparation process thereof |
| CN111755946A (en) * | 2020-06-30 | 2020-10-09 | 中国科学院半导体研究所 | DFB laser with active cavity and passive cavity alternating structure |
| CN111755950A (en) * | 2020-06-30 | 2020-10-09 | 中国科学院半导体研究所 | DFB laser with electrode partially covering ridge |
| JP2022516453A (en) * | 2018-12-28 | 2022-02-28 | 南京郵電大学 | Homo-integrated infrared photonic chip and its manufacturing method |
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| CN111755946A (en) * | 2020-06-30 | 2020-10-09 | 中国科学院半导体研究所 | DFB laser with active cavity and passive cavity alternating structure |
| CN111755950A (en) * | 2020-06-30 | 2020-10-09 | 中国科学院半导体研究所 | DFB laser with electrode partially covering ridge |
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Application publication date: 20131218 |