CN107046228B - A kind of Electroabsorption Modulated Laser and preparation method thereof - Google Patents
A kind of Electroabsorption Modulated Laser and preparation method thereof Download PDFInfo
- Publication number
- CN107046228B CN107046228B CN201710222664.6A CN201710222664A CN107046228B CN 107046228 B CN107046228 B CN 107046228B CN 201710222664 A CN201710222664 A CN 201710222664A CN 107046228 B CN107046228 B CN 107046228B
- Authority
- CN
- China
- Prior art keywords
- laser
- zone
- substrate
- present
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/3436—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)P
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The present invention provides a kind of Electroabsorption Modulated Laser and preparation method thereof.Electroabsorption Modulated Laser provided by the invention includes SiO2- Si-Metal compound substrate, modulation-laser module, insulating layer and metal electrode layer；The SiO2- Si-Metal compound substrate has interlayer structure, metal layer and SiO including being distributed in silicon wafer two sides2Layer；A length of 30~600 μm of total chamber of the modulation-laser module, cross-sectional diameter is 0.8~5 μm, including the modulator zone being distributed on straight line and laser zone, has quantum well structure；The laser zone includes two Fabry-Perot chambers；Modulation-the laser module is distributed in SiO2Layer upper surface, quantum well structure are parallel to compound substrate；The insulating layer is distributed in SiO2Layer upper surface, and cover modulation-laser module；The metal electrode layer is covered in surface of insulating layer part corresponding with modulator zone, small in size, and integrated level is high.
Description
Technical field
The present invention relates to semiconductor microactuator nano parts preparation technical field, in particular to a kind of Electroabsorption Modulated Laser and its
Preparation method.
Background technique
With the fast development of internet and cordless communication network, the optical network system being made of traditional discrete device more next
More complicated, bring is the problem of energy consumption is increased sharply therewith.People thirst for for the semiconductor devices with different function being integrated in together
On one substrate, the integrated energy simplied system structure of height brings more compact packaged type, greatly reduces energy consumption.
After 2004, photonic integrated device (PIC) is quickly grown, and becomes the research hotspot of current optical communication field, and
It and by American-European developed regions and country location is strategic development technique direction.The integrated of semiconductor devices represents the following optic communication
The developing direction of network can efficiently solve the problem of message capacity is nervous and energy consumption is increased sharply.
Moore's Law is followed in the integrated level of microelectronic field, chip: the integrated level (transistor on one single chip of chip
Number) double about every two years, and this law is verified in electronic chip development process over the years.However, photon
Integrated chip and traditional microelectronics integrated chip are very different, and for photonic integrated device, dimension is much big at present
In the size of microelectronics functional structure, and opto-electronic device is many kinds of, including laser, modulator, amplifier, filtering
Device, coupler and multiplexer etc. need the function element of different designs, and therefore, the integrated difficulty of opto-electronic device is far longer than biography
The microelectronic chip of system.
In various opto-electronic devices, semiconductor laser is more special a kind of device, as optical communication system
Information source, it has critical role in numerous opto-electronic devices.Currently, the laser of Electroabsorption Modulated Laser in the prior art
Module is generally Distributed Feedback Laser, size generally at 100 microns or more, can not meet people for laser dimensions and
The requirement of integrated level.
Summary of the invention
The purpose of the present invention is to provide a kind of Electroabsorption Modulated Lasers and preparation method thereof.Electricity provided by the invention is inhaled
It is small to receive modulation laser dimensions, integrated level height.
The present invention provides a kind of Electroabsorption Modulated Lasers, including SiO2- Si-Metal compound substrate, modulation-laser
Module, insulating layer and metal electrode layer；
The SiO2- Si-Metal compound substrate has interlayer structure, metal layer and SiO including being distributed in silicon wafer two sides2
Layer；
Modulation-the laser module includes the modulator zone being distributed on straight line and laser zone, has quantum well structure,
The laser zone includes two Fabry-Perot chambers；A length of 30~600 μm of total chamber of the modulation-laser module, cross section is straight
Diameter is 0.8~5 μm；Modulation-the laser module is distributed in the SiO2Layer upper surface, and quantum well structure be parallel to it is compound
Substrate；
The insulating layer is distributed in the SiO2The upper surface of layer, and cover the modulation-laser module；
The metal electrode layer is covered in surface of insulating layer part corresponding with modulator zone.
Preferably, a length of 20~500 μm of the chamber of the modulator zone.
Preferably, the photoluminescence spectra blue shift of the modulator zone is 10~50nm.
Preferably, the spacing of two Fabry-Perot chambers of the laser zone is 60~300nm, two Fabry-Perots
The long difference of the chamber of chamber is no more than 20 μm.
Preferably, the spacing of the modulator zone and laser zone is 1~3 μm.
The present invention provides a kind of preparation methods of Electroabsorption Modulated Laser described in above-mentioned technical proposal, including following step
It is rapid:
(1) semiconductor nanowires are transferred to SiO2SiO in-Si-Metal compound substrate2Side obtains substrate-nano wire
Composite construction；The cross-sectional diameter of the semiconductor nanowires is 0.8~5 μm, has quantum well structure；
(2) mask is made on substrate-nanowire composite structures semiconductor nanowires surface that the step (1) obtains, made
For masked areas as laser zone part, then expose portion carries out surface to semiconductor nanowires as modulator zone part
Processing removes mask after annealing, obtains substrate；
(3) insulating materials is coated on the substrate that the step (2) obtains, insulating materials is made to cover semiconductor nanowires,
Obtain insulating layer-nano wire-substrate composite construction；
(4) mask is made in insulating layer-nano wire-substrate composite construction surface of insulating layer that the step (3) obtains, made
Mask covers the corresponding part in laser zone, then in surface of insulating layer evaporation metal, removes mask and obtains metal electrode layer-insulation
Layer-nano wire-substrate composite construction；
(5) the metal electrode layer boundary in the step (4) carries out the first etching, and nano wire is made to be divided into modulator zone and swash
Light area；
(6) the second etching is carried out to the laser zone in the step (5), laser is divided into two Fabry-Perot chambers,
Obtain Electroabsorption Modulated Laser.
Preferably, the Quantum Well quantity of semiconductor nanowires is preferably 3~5 pairs in the step (1).
Preferably, the temperature annealed in the step (2) is 750~850 DEG C, and the time of annealing is 20~100s.
Preferably, the width of the first etching is 1~3 μm in the step (5), and the depth of the first etching is 1~2 μm.
Preferably, the width of the second etching is 60~300nm in the step (6), and the depth of the second etching is 1~2 μm.
Electroabsorption Modulated Laser provided by the invention includes SiO2- Si-Metal compound substrate, modulation-laser module,
Insulating layer and metal electrode layer；The SiO2- Si-Metal compound substrate has interlayer structure, including being distributed in silicon wafer two sides
Metal layer and SiO2Layer；A length of 30~600 μm of total chamber of the modulation-laser module, cross-sectional diameter is 0.8~5 μm, including
The modulator zone being distributed on straight line and laser zone have quantum well structure；The laser zone includes two Fabry-Perots
Chamber；Modulation-the laser module is distributed in the SiO2The upper surface of layer, and quantum well structure is parallel to compound substrate；It is described
Insulating layer is distributed in the SiO2The upper surface of layer, and cover the modulation-laser module；The metal electrode layer is covered in
Surface of insulating layer part corresponding with modulator zone.Modulator zone is perpendicular to quantum in Electroabsorption Modulated Laser provided by the invention
Trap direction two sides apply electric field, modulate laser intensity by Quantum Well electric absorption mode；Laser is motivated with optical pumping, using solution
The mode of reason face coupling exports single-mode laser, and required laser chamber length is small in size.The experimental results showed that provided by the invention
Minimum 0.8 μm of Electroabsorption Modulated Laser cross-sectional diameter, minimum chamber is only 30 μm long, and small in size, integrated level is high.
The present invention integration laser and modulator on a nano wire, preparation method is simple and easy to control, at low cost.
Detailed description of the invention
Fig. 1 is the schematic diagram of semiconductor nanowires preparation in the embodiment of the present invention 1；
Fig. 2 is the epitaxy junction composition of semiconductor nanowires in the embodiment of the present invention 1；
Fig. 3 is Electroabsorption Modulated Laser laser zone mask schematic diagram in the embodiment of the present invention 1；
Fig. 4 is Electroabsorption Modulated Laser modulator zone quantum well mixing schematic diagram in the embodiment of the present invention 1；
Fig. 5 is Electroabsorption Modulated Laser modulator zone top electrode schematic diagram in the embodiment of the present invention 1；
Fig. 6 is the modulator zone sectional view of Electroabsorption Modulated Laser in the embodiment of the present invention 1；
Fig. 7 is Electroabsorption Modulated Laser scantling plan in the embodiment of the present invention 1.
Specific embodiment
The present invention provides a kind of Electroabsorption Modulated Lasers, including SiO2- Si-Metal compound substrate, modulation-laser
Module, insulating layer and metal electrode layer；
The SiO2- Si-Metal compound substrate has interlayer structure, metal layer and SiO including being distributed in silicon wafer two sides2
Layer；
Modulation-the laser module includes the modulator zone being distributed on straight line and laser zone, has quantum well structure,
The laser zone includes two Fabry-Perot chambers；A length of 30~600 μm of total chamber of the modulation-laser module, cross section is straight
Diameter is 0.8~5 μm；Modulation-the laser module is distributed in the SiO of the compound substrate2On face, and quantum well structure is parallel to
Compound substrate；
The insulating layer is distributed in the SiO of the compound substrate2Face, and cover the modulation-laser module；
The metal electrode layer is covered in surface of insulating layer part corresponding with modulator zone.
Electroabsorption Modulated Laser provided by the invention includes SiO2- Si-Metal compound substrate, the SiO2-Si-
Metal compound substrate has interlayer structure, metal layer and SiO including being distributed in silicon wafer two sides2Layer.The present invention is to the silicon wafer
Thickness there is no special restriction, using silicon wafer well known to those skilled in the art.In the present invention, the electricity of the silicon wafer
Resistance rate is preferably no greater than 0.005 Ω cm.In the present invention, the SiO2Thickness degree is preferably 100~200nm, more preferably
For 120~180nm, most preferably 140~160nm.In the present invention, the thickness of the metal layer is preferably 80~120nm, more
Preferably 90~110nm.The present invention does not have special restriction to the metal species of the metal layer, using those skilled in the art
The well known electrode metal for Electroabsorption Modulated Laser.In the present invention, the metal of the metal layer is preferably chromium
Or nickel.
The present invention is to the SiO2The source of-Si-Metal compound substrate does not have special restriction, using art technology
Commercial product known to personnel is prepared according to the method for preparation compound substrate well known to those skilled in the art.In this hair
In bright, the SiO2Preparing for-Si-Metal compound substrate is preferred are as follows: is including SiO2The silicon face evaporation metal of the silicon wafer of layer, obtains
To SiO2- Si-Metal compound substrate.The present invention is to described including SiO2The source of the silicon wafer of layer does not have special restriction, uses
Commercial product well known to those skilled in the art or according to silicon substrate well known to those skilled in the art preparation method preparation be
It can.In the present invention, the vapor deposition is preferably hot evaporation.The present invention does not have special restriction, root to the temperature of the hot evaporation
It is adjusted according to the fusing point of metal to be deposited.
Electroabsorption Modulated Laser provided by the invention includes modulation-laser module.In the present invention, the modulation-swashs
Optical module has quantum well structure, preferably multi-quantum pit structure.In the present invention, the quantity of the quantum well structure is preferably
3~5 pairs；In an embodiment of the present invention, the quantity of the quantum well structure can be specially 3,4 or 5 pairs.
In the present invention, the modulation-laser module includes the modulator zone being distributed on straight line and laser zone, described
Laser zone includes two Fabry-Perot chambers.In the present invention, the chamber of the modulator zone is preferably 20~500 μm long, more preferably
It is 50~400 μm, most preferably 100~300 μm.In the present invention, the photoluminescence spectra blue shift of the modulator zone is preferably
10~50nm, more preferably 20~40nm.In the present invention, the spacing of two Fabry-Perot chambers of the laser zone is preferred
For 60~300nm, more preferably 100~200nm；Preferably more than 20 μm of the long difference of the chamber of described two Fabry-Perot chambers, more
Preferably 5~15 μm.In the present invention, the spacing of the modulator zone and laser zone is preferably 1~3 μm, more preferably 1.5~
2.5 μm, most preferably 2 μm.
In the present invention, a length of 30~600 μm of total chamber of the modulation-laser module, preferably 80~500 μm, it is more excellent
It is selected as 100~400 μm, most preferably 200~300 μm；The cross-sectional diameter of the modulation-laser module is 0.8~5 μm, excellent
It is selected as 1~4 μm, more preferably 2~3 μm.In the present invention, the cross section of the modulation-laser module is preferably trapezoidal.
In the present invention, the modulation-laser module preferably has semiconductor-quantum with trapezoidal bottom edge parallelly distribute on
Trap-semiconductor layered structure.In the present invention, the semiconductor in the modulation laser module is preferably in GaN, InP and GaAs
One kind.In the present invention, when the semiconductor is GaN, the Quantum Well is preferably InGaN-GaN structure；When described half
When conductor is InP, the Quantum Well is preferably InGaAs-InP structure；When the semiconductor is GaAs, the Quantum Well is excellent
It is selected as InGaAs-GaAs structure.
In the present invention, the modulation-laser module is distributed in the SiO2The upper surface of layer, and quantum well structure is parallel
In compound substrate.In the present invention, the modulation-preferably passes through van der waals force knot between laser module and compound substrate
It closes.In the present invention, the quantum well structure in the modulation-laser module is parallel to compound substrate, with the electricity applied when using
Field is vertical, and modulator zone modulates laser intensity by Quantum Well electric absorption mode；Laser zone is exported by the way of cleavage surface coupling
Single-mode laser, required chamber length are small in size.
Electroabsorption Modulated Laser provided by the invention includes insulating layer, and the insulating layer is distributed in the SiO2Layer it is upper
Surface, and cover the modulation-laser module.The present invention does not have special restriction to the thickness of the insulating layer, with can
It covers subject to the modulation-laser module.In the present invention, the thickness of the insulating layer is preferably 2~4 μm, more preferably 2.5
~3.5 μm.The present invention does not have special restriction to the material of the insulating layer, using insulation material well known to those skilled in the art
Material.In the present invention, the material of the insulating layer is preferably spin-coating glass (SOG) or organic glass (PMMA).
Electroabsorption Modulated Laser provided by the invention includes metal electrode layer, and the metal electrode layer is covered in insulating layer
Surface part corresponding with modulator zone.The present invention does not have special restriction to the metal species of the metal electrode layer, using this
The electrode metal of Electroabsorption Modulated Laser is used for known to the technical staff of field.In the present invention, the metal electrode
The metal of layer is preferably silver, chromium or nickel.In the present invention, the thickness of the metal electrode layer is preferably 80~120nm, more preferably
For 90~110nm.
The present invention also provides the preparation methods of Electroabsorption Modulated Laser described in above-mentioned technical proposal, including following step
It is rapid:
(1) semiconductor nanowires are transferred to SiO2SiO in-Si-Metal compound substrate2Side obtains substrate-nano wire
Composite construction；The cross-sectional diameter of the semiconductor nanowires is 0.8~5 μm, has quantum well structure；
(2) mask is made on substrate-nanowire composite structures semiconductor nanowires surface that the step (1) obtains, made
For masked areas as laser zone part, then expose portion carries out surface to semiconductor nanowires as modulator zone part
Processing removes mask after annealing, obtains substrate；
(3) insulating materials is coated on the substrate that the step (2) obtains, insulating materials is made to cover semiconductor nanowires,
Obtain insulating layer-nano wire-substrate composite construction；
(4) mask is made in insulating layer-nano wire-substrate composite construction surface of insulating layer that the step (3) obtains, made
Mask covers the corresponding part in laser zone, then in surface of insulating layer evaporation metal, removes mask and obtains metal electrode layer-insulation
Layer-nano wire-substrate composite construction；
(5) the metal electrode layer boundary in the step (4) carries out the first etching, and nano wire is made to be divided into modulator zone and swash
Light area；
(6) the second etching is carried out to the laser zone in the step (5), laser is divided into two Fabry-Perot chambers,
Obtain Electroabsorption Modulated Laser.
Semiconductor nanowires are transferred to SiO by the present invention2SiO in-Si-Metal compound substrate2Side obtains substrate-and receives
Rice noodles composite construction.In the present invention, the semiconductor nanowires have quantum well structure, preferably multi-quantum pit structure.?
In the present invention, the quantity of the quantum well structure is preferably 3~5 pairs；In an embodiment of the present invention, the quantum well structure
Quantity can be specially 3,4 or 5 pairs.
In the present invention, the cross-sectional diameter of the semiconductor nanowires be 0.8~5 μm, preferably 1~4 μm, more preferably
It is 2~3 μm.In the present invention, the cross section of the semiconductor nanowires is preferably trapezoidal；The quantum well structure preferably with institute
It is parallel to state trapezoidal bottom edge.In the present invention, the semiconductor nanowires preferably have partly leads with trapezoidal bottom edge parallelly distribute on
Body-Quantum Well-semiconductor layered structure.In the present invention, the length of the semiconductor nanowires is preferably 100~1000 μm,
More preferably 200~800 μm, most preferably 400~600 μm.
The present invention does not have special restriction to the material of semiconductor in the semiconductor nanowires, using those skilled in the art
The semiconductor of laser is used to prepare known to member.In the present invention, the semiconductor is preferably in GaN, InP and GaAs
One kind.In the present invention, when the semiconductor is GaN, the Quantum Well is preferably InGaN-GaN structure；When described half
When conductor is InP, the Quantum Well is preferably InGaAs-InP structure；When the semiconductor is GaAs, the Quantum Well is excellent
It is selected as InGaAs-GaAs structure.
The present invention does not have special restriction to the source of the semiconductor nanowires, and use is well known to those skilled in the art
Prepare the technical solution preparation with the nano wire of quantum well structure.The present invention is preferably according to Chinese patent CN
The semiconductor nanowires on silicon substrate are prepared in technical solution in 105118860 A.
After obtaining the semiconductor nanowires on silicon substrate, the semiconductor nanowires are preferably transferred to SiO by the present invention2-
In Si-Metal compound substrate, substrate-nanowire composite structures are obtained.The not special limit of operation of the present invention to the transfer
Technical solution that is fixed, being shifted using nano wire well known to those skilled in the art.In the present invention, the preferred packet of the transfer
It includes following steps: the semiconductor nanowires on silicon substrate being removed into solvent, nanowire solution is obtained；The nano wire is molten
Liquid is coated on SiO2In-Si-Metal compound substrate, substrate-nanowire composite structures are obtained.
In the present invention, the removing is preferred specifically: semiconductor nanowires surface on a silicon substrate adds stripper, quiet
It postpones to be transferred in solvent and shake.The present invention does not have special restriction to the type of the stripper, using those skilled in the art
Stripper known to member.In the present invention, the stripper preferably includes nitric acid, hydrofluoric acid and water；The nitric acid, hydrogen fluorine
The mass ratio of acid and water is preferably 4~6:1.5~2.5:1, more preferably 5:2:1.The present invention does not have the dosage of the stripper
There is special restriction, is adjusted according to removing situation.In the present invention, the amount of the stripper preferably makes substrate surface
Until whitening.
In the present invention, the time of the standing is preferably 25~35min, more preferably 28~32min.In the present invention
In, the solvent is preferably alcohols solvent, more preferably isopropanol.In an embodiment of the present invention, the purity of the isopropanol
Preferably 99.8%.The present invention does not have special restriction to the dosage of the solvent, can impregnate silicon substrate.In the present invention
In, the concussion is preferably ultrasonic vibration, and the frequency of the ultrasonic vibration is preferably 20~60Hz, more preferably 30~50Hz；
The time of the ultrasonic vibration is preferably 30~60s, more preferably 40~50s.
After obtaining nanowire solution, the nanowire solution is preferably coated on SiO by the present invention2- Si-Metal composite lining
On bottom, substrate-nanowire composite structures are obtained.The not special restriction of operation of the present invention to the coating, using this field
The technical solution coated known to technical staff.In the present invention, the coating is preferably spin coating；The rate of the spin coating
Preferably 1000~3000r/min, more preferably 1500~2500r/min.The present invention preferably carries out after the completion of the spin coating
It is dry；The temperature of the drying is preferably 80~120 DEG C, and more preferably 90~110 DEG C；The time of the drying is preferably 30~
120s, more preferably 60~90s.In the present invention, the coating makes semiconductor nanowires according to trapezoidal bottom edge and substrate surface
The mode of contact is placed in compound substrate.
After obtaining substrate-nanowire composite structures, semiconductor nano of the present invention in the substrate-nanowire composite structures
Mask is made on line surface, makes masked areas as laser zone part, expose portion is as modulator zone part, then to semiconductor
Nano wire is surface-treated, and is removed mask after annealing, is obtained substrate.
The present invention restriction not special to the operation of the preparation of the mask, using system well known to those skilled in the art
The technical solution of standby mask manufacture.Photoresist is preferably coated on substrate-nanowire composite structures semiconductor by the present invention
Nanowire surface makes mask cover laser zone part, the exposure of modulator zone part.In the present invention, the coating is preferably spin coating；
The spin coating preferably successively includes spin coating and quick spin coating at a slow speed.In the present invention, the rate of the spin coating at a slow speed is preferably 550
~650r/min, more preferably 580~620r/min；The time of spin coating is preferably 6~10s at a slow speed, more preferably 7~9s；Institute
The rate for stating quick spin coating is preferably 3500~4500r/min, more preferably 3800~4200r/min；The time of spin coating at a slow speed
Preferably 25~35s, more preferably 28~32s.In the present invention, the mask can protect laser zone in sequent surface processing
In it is unaffected.
After the completion of mask manufacture, the present invention is surface-treated the semiconductor nanowires after the mask, then removes
Mask after annealing, obtains substrate.In the present invention, the surface treatment is preferably ion bombardment.In the present invention, the ion
The power of bombardment is preferably 600~1000W, more preferably 700~900W；The time of the ion bombardment is preferably 10~15s,
More preferably 12~13s.The present invention does not have special restriction to the device of the surface treatment, ripe using those skilled in the art
The device for the surface treatment known.In the present invention, the surface treatment is preferably in sense coupling machine
It carries out.In the present invention, the pressure of argon gas is preferably 6~10mTorr in the sense coupling machine, more preferably
For 6~9mTorr.In the present invention, the surface treatment makes modulator zone surface generate a large amount of defects.
The present invention restriction not special to the operation of the removal of the mask, is gone using well known to those skilled in the art
Except the technical solution of mask.The present invention preferably successively removes mask with acetone, isopropanol and water washing.The present invention is to described
The number of washing does not have special restriction, completely removes mask.
In the present invention, the temperature of the annealing is preferably 700~900 DEG C, and more preferably 750~850 DEG C；The annealing
Time be preferably 20~100s, more preferably 40~80s, most preferably 50~70s.In the present invention, described to be heated to moving back
The time of fiery temperature is preferably 30~50s, more preferably 35~45s.In the present invention, the annealing is preferably protected in inert gas
Shield is lower to be carried out.In the present invention, the annealing makes the defect on modulator zone surface diffuse to quantum well region, causes trap and builds part original
Sub- relative diffusion causes well layer width to reduce, and it is 10~50nm that modulator zone material band gap, which broadens to photoluminescence spectra blue shift, more
Preferably 20~40nm.
After obtaining substrate, the present invention coats insulating materials on the substrate, and insulating materials is made to cover semiconductor nanowires,
Obtain insulating layer-nano wire-substrate composite construction.In the present invention, the insulating materials is preferably spin-coating glass (SOG) or has
Machine glass (PMMA).The present invention restriction not special to the operation of the coating of the insulating materials, using those skilled in the art
The technical solution coated known to member.In the present invention, the coating of the insulating materials is preferably spin coating；The spin coating is excellent
Choosing successively includes spin coating and quick spin coating at a slow speed.In the present invention, the rate of the spin coating at a slow speed is preferably 550~650r/
Min, more preferably 580~620r/min；The time of spin coating is preferably 6~10s at a slow speed, more preferably 7~9s；The quick rotation
The rate of painting is preferably 2500~3500r/min, more preferably 2800~3200r/min；The time of spin coating is preferably 35 at a slow speed
~45s, more preferably 38~42s.The present invention does not have special restriction to the coated weight of the insulating materials, can cover and partly lead
Body nano wire.
The present invention is preferably heat-treated after the completion of the coating, obtains insulating layer-nano wire-substrate composite construction.
In the present invention, the temperature of the heat treatment is preferably 180~220 DEG C, and more preferably 190~210 DEG C；The heat treatment when
Between preferably 15~25min, more preferably 18~22min.In the present invention, the time for being warming up to the heat treatment temperature is preferred
For 8~12min, more preferably 9~11min.
After obtaining insulating layer-nano wire-substrate composite construction, the present invention is in the insulating layer-nano wire-substrate composite junction
The surface of insulating layer of structure makees mask, makes the corresponding part in mask covering laser zone, then in surface of insulating layer evaporation metal, removal
Mask obtains metal electrode layer-insulating layer-nano wire-substrate composite construction.
The present invention restriction not special to the operation of the preparation of the mask of the surface of insulating layer, using art technology
The technical solution of mask manufacture is prepared known to personnel.In the present invention, the mask of the surface of insulating layer prepare it is excellent
It selects identical as the technical solution of preparation of semiconductor nanowires surface mask described in above-mentioned technical proposal.
The present invention does not have special restriction to the type of the metal of the vapor deposition, using use well known to those skilled in the art
In the metal of electrode.In the present invention, the metal of the vapor deposition is preferably silver, chromium or nickel.In the present invention, the vapor deposition
It is preferred that carrying out under vacuum conditions；The vacuum degree is preferably 2.5~3.5 × 10-4Pa, more preferably 2.8~3.2 × 10- 4Pa.In the present invention, the vapor deposition is preferably electron beam evaporation plating or hot evaporation.Temperature and time of the present invention to the vapor deposition
There is no special restriction, is adjusted according to the material of metal electrode layer and thickness.
The present invention restriction not special to the operation of the removal of the mask, is gone using well known to those skilled in the art
Except the technical solution of mask.In the present invention, the removal of the mask preferably with mask is removed described in above-mentioned technical proposal
Operation it is identical.
After obtaining metal electrode layer-insulating layer-nano wire-substrate composite construction, the present invention is along the metal electrode layer side
Boundary carries out the first etching, and nano wire is made to be divided into modulator zone and laser zone.The present invention is not special to the operation of first etching
Restriction, using the technical solution of etching well known to those skilled in the art.In the present invention, first etching is preferred
For focused-ion-beam lithography.In the present invention, the width of first etching is preferably 1~3 μm, more preferably 1.5~2.5 μ
M, most preferably 2 μm；The depth of first etching is preferably 1~2 μm, and more preferably 1.2~1.5 μm.In the present invention, institute
It states modulator zone and laser zone to be obtained by a semiconductor nanowires are etched, with a nano wire in the prior art or more nanometers
Line makes a device and compares, and integrated level is higher.
After the completion of first etching, the present invention carries out the second etching to the laser zone, and laser is divided into two Fabries-
Polo chamber (F-P cavity), obtains Electroabsorption Modulated Laser.The present invention restriction not special to the operation of second etching,
Using the technical solution of etching well known to those skilled in the art.In the present invention, second etching preferably focuses
Ion beam etching.In the present invention, the width of second etching is preferably 60~300nm, more preferably 100~200nm；Institute
The depth for stating the second etching is preferably 1~2 μm, and more preferably 1.2~1.5 μm.In the present invention, the chamber of described two F-P cavities
Preferably more than 20 μm, more preferably 5~15 μm of long difference.
After the completion of second etching, the present invention is preferably etching extra semiconductor nanowires according to the long length of required chamber
Fall, obtains Electroabsorption Modulated Laser.
The present invention does not have special restriction to the application method of the Electroabsorption Modulated Laser, using those skilled in the art
The usage mode of Electroabsorption Modulated Laser known to member.The present invention is preferably in the metal of the Electroabsorption Modulated Laser
Apply voltage between electrode layer and compound substrate, forms uniform electric field and work.In the present invention, the voltage is preferably -30
~30V.In the present invention, the uniform electric field is vertical with the Quantum Well in Electroabsorption Modulated Laser, is inhaled by Quantum Well electricity
Debit's formula modulates laser intensity.
In order to further illustrate the present invention, below with reference to embodiment to Electroabsorption Modulated Laser provided by the invention and its
Preparation method is described in detail, but they cannot be interpreted as limiting the scope of the present invention.
Embodiment 1:
S1. the preparation of semiconductor nanowires
On the silicon wafer of the silicon dioxide mask layer of the thickness containing 150nm, spin coating photoetching positive photoresist；Using the equidistant of setting spacing
Striped photolithography plate is exposed, fringe spacing 5um；Development, removes the photoetching positive photoresist being exposed, and remaining photoresist constitutes striped
Figure；The silicon dioxide mask layer not being covered by photoresist with BOE solution etches away；There is no exposure mask with KOH solution wet etching
The silicon of layer covering, etching depth 2um make side expose the face Si, ultimately form dovetail groove, the spacing of adjacent trapezoidal slot about 5um；
The substrate of figure will be etched, nano wire has been grown by MOCVD, as shown in Figure 1；
GaN nano wire epitaxial structure is as shown in Fig. 2, using multi-quantum pit structure, and Quantum Well quantity is 3 pairs, emission wavelength
For 450nm or so, nanowire diameter about 2um.
S2.SiO2The preparation of-Si-Metal compound substrate
In upper surface 150nm thickness SiO2Low resistance silicon chip lower surface be deposited refractory metal；With hot evaporation machine, in silicon wafer
100nm thickness Cr is deposited in lower surface.
S3. the transfer of semiconductor nanowires
Prepare stripper, configuration proportion HNO3:HF:H2O=5:2:1；Stripper is transferred to by liquid-transfering gun and is grown
On the silicon wafer of GaN nano wire, 30min is waited, it is repeated multiple times, until the visible substrate surface of naked eyes whitens；The silicon wafer is transferred to dense
It spends in 99.8% aqueous isopropanol, ultrasonic vibration 30s, until in nano wire ultrasound to aqueous isopropanol；The solution is spin-coated to multiple
It closes on substrate.
S4. laser zone mask is made
It is spun on substrate by photoresist, (600r/min) 9s, quick (4000r/min) 30s lead to spin-coating time at a slow speed
Uv-exposure is crossed, developing liquid developing leaves photoresist in laser zone and makees mask, as shown in Figure 3.
S5. it is surface-treated
Product after mask is put into sense coupling machine (ICP), is vacuumized, and is passed through argon gas, in cavity
Air pressure 8mTorr sets radio-frequency power 600w, sets bombardment time as 10s；Argon gas is guided to generate argon ion by rf electric field
And electronics, which is placed in cathode area, then the bombardment by argon ion stream, surface generates a large amount of defects, by adjusting ICP function
Rate and processing time, it can adjust surface defect quantity, as shown in Figure 4；It is removed photoresist with acetone rinsing, successively uses isopropanol, deionization
Water rinses, and dries.
S6. it anneals
Product after surface treatment, is put into quick anneal oven, is passed through nitrogen and makees protection gas, in 40s by temperature by
Room temperature rises to 800 DEG C, keeps 60s, natural cooling；Surface defect diffuses to quantum well region, causes trap opposite with part of atoms is built
Diffusion, causes well layer width to reduce, and modulator zone material band gap broadens.
S7. the preparation of insulating layer
SOG is spun on substrate, spin-coating time (600r/min) 9s at a slow speed, quick (3000r/min) 40s；Heat treatment,
By rising to 200 DEG C in room temperature 10min, 20min, Temperature fall, with a thickness of 2.5um are kept.
S8. laser zone mask is manufactured
It is spun on substrate by photoresist, (600r/min) 9s, quick (4000r/min) 30s lead to spin-coating time at a slow speed
Uv-exposure is crossed, developing liquid developing leaves photoresist in laser zone and makees mask.
S9. the preparation of metal electrode layer
Ag metal is deposited using hot evaporation machine, 100nm is thick；It is removed photoresist with acetone rinsing, successively uses isopropanol, deionized water punching
It washes, and dries.
S10. the first etching
Deep etching is done along evaporation metal line of demarcation with focused ion beam, at once to being divided into the area Liang Ge below Quantum Well
Domain sets etching width as 2 μm, and depth is 1.2 μm；Metal area is modulator zone, and non-metallic areas is laser zone；
S11. the second etching
The laser zone is divided into two sections of F-P cavities different in size with focused-ion-beam lithography, the long difference of chamber is no more than 20 μm,
It is processed by required chamber length, and etches away the extra part in laser zone one end；It is former that output single-mode laser is coupled according to cleavage surface
Reason, two sections of cavity length of the resonator chambeies needed for being calculated are divided into two sections of F-P cavities different in size with focused-ion-beam lithography, and setting is carved
Erosion groove width is 60nm, and depth is 1.2 μm, and setting two cavity length of the resonator chambeies is respectively 10 μm and 20 μm, and excess portion is removed in processing
Point.
Electroabsorption Modulated Laser modulator zone top electrode schematic diagram, modulator zone sectional view and summary manufactured in the present embodiment
Composition is respectively as shown in Fig. 5, Fig. 6 and Fig. 7.The diameter of section of Electroabsorption Modulated Laser manufactured in the present embodiment is 2um, modulation
Section length is 50um, and laser section length is 30um, total length 80um.
Embodiment 2:
S1. using the semiconductor nanowires prepared in embodiment 1.
S2.SiO2The preparation of-Si-Metal compound substrate
The SiO of thickness containing 150nm in upper surface2Low resistance silicon chip lower surface be deposited refractory metal；With hot evaporation machine, in silicon
100nm thickness Ni is deposited in piece lower surface.
S3. the transfer of semiconductor nanowires
Prepare stripper, configuration proportion HNO3:HF:H2O=5:2:1；Stripper is transferred to by liquid-transfering gun and is grown
On the silicon wafer of GaN nano wire, 30min is waited, it is repeated multiple times, until the visible substrate surface of naked eyes whitens；The silicon wafer is transferred to dense
It spends in 99.8% aqueous isopropanol, ultrasonic vibration 60s, until in nano wire ultrasound to aqueous isopropanol；The solution is spin-coated to multiple
It closes on substrate.
S4. the preparation of laser zone mask
It is spun on substrate by photoresist, (600r/min) 9s, quick (4000r/min) 30s lead to spin-coating time at a slow speed
Uv-exposure is crossed, developing liquid developing leaves photoresist in laser zone and makees mask.
S5. it is surface-treated
Product after mask is put into sense coupling machine (ICP), is vacuumized, and is passed through argon gas, in cavity
Air pressure 8mTorr sets radio-frequency power 600w, sets bombardment time as 15s；Argon gas is guided to generate argon ion by rf electric field
And electronics, which is placed in cathode area, then the bombardment by argon ion stream, surface generates a large amount of defects, by adjusting ICP function
Rate and processing time, it can adjust surface defect quantity；It is removed photoresist with acetone rinsing, successively uses isopropanol, deionized water is rinsed, and is dried
It is dry.
S6. it anneals
The product that finishes of surface treatment is put into quick anneal oven, nitrogen is passed through and makees protection gas, by temperature by room in 40s
Temperature rise keeps 100s, natural cooling to 800 DEG C；Surface defect diffuses to quantum well region, causes trap and builds the opposite expansion of part of atoms
It dissipates, well layer width is caused to reduce, modulator zone material band gap broadens.
S7. the preparation of insulating layer
SOG is spun on substrate, spin-coating time (600r/min) 9s at a slow speed, quick (3000r/min) 40s；Heat treatment,
By rising to 200 DEG C in room temperature 10min, 20min, Temperature fall, with a thickness of 2.5um are kept.
S8. laser zone mask is manufactured
It is spun on substrate by photoresist, (600r/min) 9s, quick (4000r/min) 30s lead to spin-coating time at a slow speed
Uv-exposure is crossed, developing liquid developing leaves photoresist in laser zone and makees mask.
S9. the preparation of metal electrode layer
Ag metal is deposited using hot evaporation machine, 100nm is thick；It is removed photoresist with acetone rinsing, successively uses isopropanol, deionized water punching
It washes, and dries.
S10. the first etching
Deep etching is done along evaporation metal line of demarcation with focused ion beam, at once to being divided into the area Liang Ge below Quantum Well
Domain sets etching width as 2.5 μm, and depth is 1.2 μm；Metal area is modulator zone, and non-metallic areas is laser zone.
S11. the second etching
The laser zone is divided into two sections of F-P cavities different in size with focused-ion-beam lithography, the long difference of chamber is no more than 20 μm,
It is processed by required chamber length, and etches away the extra part in laser zone one end；It is former that output single-mode laser is coupled according to cleavage surface
Reason, two sections of cavity length of the resonator chambeies needed for being calculated are divided into two sections of F-P cavities different in size with focused-ion-beam lithography, and setting is carved
Erosion groove width is 150nm, and depth is 1.2 μm, and setting two cavity length of the resonator chambeies is respectively 50 μm and 55 μm, and excess portion is removed in processing
Point.
The diameter of section of Electroabsorption Modulated Laser manufactured in the present embodiment is 2um, and modulation section length is 150um, laser
Section length is 105um, total length 255um.
Embodiment 3:
S1. the preparation of semiconductor nanowires
GaN nano wire is prepared according to the method for embodiment 1, and Quantum Well quantity is 3 pairs, and emission wavelength is 450nm or so, is received
Rice noodles diameter is 3um.
S2.SiO2The preparation of-Si-Metal compound substrate
The SiO of thickness containing 150nm in upper surface2Low resistance silicon chip lower surface be deposited refractory metal；With hot evaporation machine, in silicon
100nm thickness Cr is deposited in piece lower surface.
S3. the transfer of semiconductor nanowires
Prepare stripper, configuration proportion HNO3:HF:H2O=5:2:1；Stripper is transferred to by liquid-transfering gun and is grown
On the silicon wafer of GaN nano wire, 30min is waited, it is repeated multiple times, until the visible substrate surface of naked eyes whitens；The silicon wafer is transferred to dense
It spends in 99.8% aqueous isopropanol, ultrasonic vibration 40s, until in nano wire ultrasound to aqueous isopropanol；The solution is spin-coated to mesh
It marks on substrate.
S4. laser zone mask is manufactured
It is spun on substrate by photoresist, (600r/min) 9s, quick (4000r/min) 30s lead to spin-coating time at a slow speed
Uv-exposure is crossed, developing liquid developing leaves photoresist in laser zone and makees mask.
S5. it is surface-treated
Product after mask is put into sense coupling machine (ICP), is vacuumized, argon gas, cavity are passed through
Interior air pressure 8mTorr sets radio-frequency power 1000w, sets bombardment time as 10s；By rf electric field guide argon gas generate argon from
Son and electronics, are placed in cathode area for the substrate, then the bombardment by argon ion stream, and surface generates a large amount of defects, by adjusting ICP
Power and processing time, it can adjust surface defect quantity；It is removed photoresist with acetone rinsing, successively uses isopropanol, deionized water is rinsed, and
Drying.
S6. it anneals
The product that finishes of surface treatment is put into quick anneal oven, nitrogen is passed through and makees protection gas, by temperature by room in 40s
Temperature rise keeps 20-100s, natural cooling to 800 DEG C；Surface defect diffuses to quantum well region, causes trap and builds part of atoms phase
To diffusion, well layer width is caused to reduce, modulator zone material band gap broadens.
S7. the preparation of insulating layer
SOG is spun on substrate, spin-coating time (600r/min) 9s at a slow speed, quick (3000r/min) 30s；Heat treatment,
By rising to 200 DEG C in room temperature 10min, 20min, Temperature fall, with a thickness of 3.5um are kept.
S8. laser zone mask is manufactured
It is spun on substrate by photoresist, (600r/min) 9s, quick (4000r/min) 30s lead to spin-coating time at a slow speed
Uv-exposure is crossed, developing liquid developing leaves photoresist in laser zone and makees mask.
S9. the preparation of metal electrode layer
Ag metal is deposited using hot evaporation machine, 100nm is thick；It is removed photoresist with acetone rinsing, successively uses isopropanol, deionized water punching
It washes, and dries.
S10. the first etching
Deep etching is done along evaporation metal line of demarcation with focused ion beam, at once to being divided into the area Liang Ge below Quantum Well
Domain sets etching width as 2 μm, and depth is 2 μm；Metal area is modulator zone, and non-metallic areas is laser zone.
S11. the second etching
The laser zone is divided into two sections of F-P cavities different in size with focused-ion-beam lithography, the long difference of chamber is no more than 20 μm,
It is processed by required chamber length, and etches away the extra part in laser zone one end；It is former that output single-mode laser is coupled according to cleavage surface
Reason, two sections of cavity length of the resonator chambeies needed for being calculated are divided into two sections of F-P cavities different in size with focused-ion-beam lithography, and setting is carved
Erosion groove width is 60nm, and depth is 1.2 μm, and setting two cavity length of the resonator chambeies is respectively 200 μm and 220 μm, and it is extra that processing is removed
Part.
The diameter of section of Electroabsorption Modulated Laser manufactured in the present embodiment is 3um, and modulation section length is 200um, laser
Section length is 420um, total a length of 620um of chamber.
As can be seen from the above embodiments, Electroabsorption Modulated Laser chamber length provided by the invention, small in size, integrated level
It is high.
The above is only a preferred embodiment of the present invention, it is not intended to limit the present invention in any form.It should
It points out, for those skilled in the art, without departing from the principle of the present invention, if can also make
Dry improvements and modifications, these modifications and embellishments should also be considered as the scope of protection of the present invention.
Claims (9)
1. a kind of Electroabsorption Modulated Laser, including SiO2- Si-Metal compound substrate, modulation-laser module, insulating layer and gold
Belong to electrode layer；
The SiO2- Si-Metal compound substrate has interlayer structure, metal layer and SiO including being distributed in silicon wafer two sides2Layer；
Modulation-the laser module includes the modulator zone being distributed on straight line and laser zone, has quantum well structure, described
Laser zone includes two Fabry-Perot chambers；A length of 30~600 μm of total chamber of the modulation-laser module, cross-sectional diameter is
0.8~5 μm；Modulation-the laser module is distributed in the SiO2The upper surface of layer, and quantum well structure is parallel to composite lining
Bottom；
The insulating layer is distributed in the SiO2The upper surface of layer, and cover the modulation-laser module；
The metal electrode layer is covered in surface of insulating layer part corresponding with modulator zone；
A length of 20~500 μm of the chamber of the modulator zone.
2. Electroabsorption Modulated Laser according to claim 1, which is characterized in that the photoluminescence spectra of the modulator zone
Blue shift is 10~50nm.
3. Electroabsorption Modulated Laser according to claim 1, which is characterized in that two Fabries-of the laser zone
The spacing of polo chamber is 60~300nm, and the long difference of the chamber of two Fabry-Perot chambers is no more than 20 μm.
4. Electroabsorption Modulated Laser according to claim 1, which is characterized in that the spacing of the modulator zone and laser zone
It is 1~3 μm.
5. the preparation method of Electroabsorption Modulated Laser described in Claims 1 to 4 any one, comprising the following steps:
(1) semiconductor nanowires are transferred to SiO2SiO in-Si-Metal compound substrate2It is compound to obtain substrate-nano wire for side
Structure；The cross-sectional diameter of the semiconductor nanowires is 0.8~5 μm, has quantum well structure；
(2) mask is made on substrate-nanowire composite structures semiconductor nanowires surface that the step (1) obtains, makes mask
Then overlay area is surface-treated semiconductor nanowires as laser zone part, expose portion as modulator zone part,
Mask after annealing is removed, substrate is obtained；
(3) insulating materials is coated on the substrate that the step (2) obtains, so that insulating materials is covered semiconductor nanowires, obtains
Insulating layer-nano wire-substrate composite construction；
(4) mask is made in insulating layer-nano wire-substrate composite construction surface of insulating layer that the step (3) obtains, makes mask
The corresponding part in laser zone is covered, then in surface of insulating layer evaporation metal, mask is removed and obtains metal electrode layer-insulating layer-
Nano wire-substrate composite construction；
(5) the metal electrode layer boundary in the step (4) carries out the first etching, and nano wire is made to be divided into modulator zone and laser
Area；
(6) the second etching is carried out to the laser zone in the step (5), laser is divided into two Fabry-Perot chambers, is obtained
Electroabsorption Modulated Laser.
6. preparation method according to claim 5, which is characterized in that the quantum of semiconductor nanowires in the step (1)
Trap quantity is 3~5 pairs.
7. preparation method according to claim 5, which is characterized in that the temperature annealed in the step (2) is 750~
850 DEG C, the time of annealing is 20~100s.
8. preparation method according to claim 5, which is characterized in that in the step (5) first etching width be 1~
3 μm, the depth of the first etching is 1~2 μm.
9. preparation method according to claim 5, which is characterized in that the width of the second etching is 60 in the step (6)
~300nm, the depth of the second etching are 1~2 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710222664.6A CN107046228B (en) | 2017-04-07 | 2017-04-07 | A kind of Electroabsorption Modulated Laser and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710222664.6A CN107046228B (en) | 2017-04-07 | 2017-04-07 | A kind of Electroabsorption Modulated Laser and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107046228A CN107046228A (en) | 2017-08-15 |
| CN107046228B true CN107046228B (en) | 2019-08-06 |
Family
ID=59544454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710222664.6A Active CN107046228B (en) | 2017-04-07 | 2017-04-07 | A kind of Electroabsorption Modulated Laser and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107046228B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987545B (en) * | 2018-07-23 | 2020-01-07 | 华南师范大学 | Light emitting diode based on GaN (gallium nitride) micron line array and preparation method |
| CN112164738A (en) * | 2020-09-15 | 2021-01-01 | 五邑大学 | Preparation method of InGaN/GaN multi-quantum well microwire |
| CN115377799B (en) * | 2022-08-18 | 2023-04-07 | 武汉敏芯半导体股份有限公司 | Electro-absorption modulation laser chip |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1818665A (en) * | 2005-02-07 | 2006-08-16 | 清华大学 | Body of miniature diaphragm type acceleration sensor and manufacturing method |
| CN101207137A (en) * | 2006-12-22 | 2008-06-25 | 中国科学院物理研究所 | Material with metal silicide nanostructure and method for making the same |
| CN101266919A (en) * | 2008-04-25 | 2008-09-17 | 华东师范大学 | A method for selectively etching silicon nano line |
| CN101410754A (en) * | 2006-03-31 | 2009-04-15 | 索尼德国有限责任公司 | A method of applying a pattern of metal, metal oxide and/or semiconductor material on a substrate |
| CN101874330A (en) * | 2007-09-27 | 2010-10-27 | 奥斯坦多科技公司 | Quantum photonic imager and manufacture method thereof |
| CN102299243A (en) * | 2011-09-14 | 2011-12-28 | 青岛理工大学 | Thin film flip chip photonic crystal light-emitting diode (LED) chip and manufacturing method thereof |
| CN102602880A (en) * | 2012-03-22 | 2012-07-25 | 中国科学院半导体研究所 | Universal self-aligned preparation method for fully limited nanowires among various materials |
| CN103457156A (en) * | 2013-09-03 | 2013-12-18 | 苏州海光芯创光电科技有限公司 | Large coupling alignment tolerance semiconductor laser chip applied to high-speed parallel optical transmission and photoelectric device thereof |
| CN103794714A (en) * | 2014-01-30 | 2014-05-14 | 中国科学院半导体研究所 | Manufacturing method of stress sensor based on nanorod diode piezoelectric effect |
| CN203631972U (en) * | 2013-09-03 | 2014-06-04 | 苏州海光芯创光电科技有限公司 | Large coupling alignment tolerance semiconductor laser chip applied to high-speed parallel optical transmission and photoelectric device thereof |
| CN104882368A (en) * | 2013-12-20 | 2015-09-02 | 加州大学董事会 | Bonding of heterogeneous material grown on silicon to a silicon photonic circuit |
| CN104947043A (en) * | 2015-05-29 | 2015-09-30 | 西安交通大学 | Preparation method of Si-ITO composite nanowire ordered array |
| CN105378930A (en) * | 2013-06-19 | 2016-03-02 | 欧培拉太阳能公司 | Optoelectronic integrated circuit |
| CN105552180A (en) * | 2016-02-02 | 2016-05-04 | 映瑞光电科技(上海)有限公司 | Fabrication method of novel high-voltage LED |
| CN105679895A (en) * | 2016-03-30 | 2016-06-15 | 河北工业大学 | Preparation method of vertical ultraviolet LED chip |
| CN106451075A (en) * | 2016-10-31 | 2017-02-22 | 苏州长光华芯光电技术有限公司 | Semiconductor laser chip and preparation method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6574260B2 (en) * | 2001-03-15 | 2003-06-03 | Corning Lasertron Incorporated | Electroabsorption modulated laser |
| US7564889B2 (en) * | 2002-11-06 | 2009-07-21 | Finisar Corporation | Adiabatically frequency modulated source |
| US7480464B2 (en) * | 2002-12-03 | 2009-01-20 | Finisar Corporation | Widely tunable, dispersion tolerant transmitter |
| CN100384038C (en) * | 2004-09-16 | 2008-04-23 | 中国科学院半导体研究所 | Method for producing stacked electric absorption modulated laser structure of selected zone epitaxial growth |
| US20070237193A1 (en) * | 2006-04-11 | 2007-10-11 | David Finzi | Electro-absorption modulated laser using coupling for chirp correction |
-
2017
- 2017-04-07 CN CN201710222664.6A patent/CN107046228B/en active Active
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1818665A (en) * | 2005-02-07 | 2006-08-16 | 清华大学 | Body of miniature diaphragm type acceleration sensor and manufacturing method |
| CN101410754A (en) * | 2006-03-31 | 2009-04-15 | 索尼德国有限责任公司 | A method of applying a pattern of metal, metal oxide and/or semiconductor material on a substrate |
| CN101207137A (en) * | 2006-12-22 | 2008-06-25 | 中国科学院物理研究所 | Material with metal silicide nanostructure and method for making the same |
| CN101874330A (en) * | 2007-09-27 | 2010-10-27 | 奥斯坦多科技公司 | Quantum photonic imager and manufacture method thereof |
| CN101266919A (en) * | 2008-04-25 | 2008-09-17 | 华东师范大学 | A method for selectively etching silicon nano line |
| CN102299243A (en) * | 2011-09-14 | 2011-12-28 | 青岛理工大学 | Thin film flip chip photonic crystal light-emitting diode (LED) chip and manufacturing method thereof |
| CN102602880A (en) * | 2012-03-22 | 2012-07-25 | 中国科学院半导体研究所 | Universal self-aligned preparation method for fully limited nanowires among various materials |
| CN105378930A (en) * | 2013-06-19 | 2016-03-02 | 欧培拉太阳能公司 | Optoelectronic integrated circuit |
| CN203631972U (en) * | 2013-09-03 | 2014-06-04 | 苏州海光芯创光电科技有限公司 | Large coupling alignment tolerance semiconductor laser chip applied to high-speed parallel optical transmission and photoelectric device thereof |
| CN103457156A (en) * | 2013-09-03 | 2013-12-18 | 苏州海光芯创光电科技有限公司 | Large coupling alignment tolerance semiconductor laser chip applied to high-speed parallel optical transmission and photoelectric device thereof |
| CN104882368A (en) * | 2013-12-20 | 2015-09-02 | 加州大学董事会 | Bonding of heterogeneous material grown on silicon to a silicon photonic circuit |
| CN103794714A (en) * | 2014-01-30 | 2014-05-14 | 中国科学院半导体研究所 | Manufacturing method of stress sensor based on nanorod diode piezoelectric effect |
| CN104947043A (en) * | 2015-05-29 | 2015-09-30 | 西安交通大学 | Preparation method of Si-ITO composite nanowire ordered array |
| CN105552180A (en) * | 2016-02-02 | 2016-05-04 | 映瑞光电科技(上海)有限公司 | Fabrication method of novel high-voltage LED |
| CN105679895A (en) * | 2016-03-30 | 2016-06-15 | 河北工业大学 | Preparation method of vertical ultraviolet LED chip |
| CN106451075A (en) * | 2016-10-31 | 2017-02-22 | 苏州长光华芯光电技术有限公司 | Semiconductor laser chip and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107046228A (en) | 2017-08-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107046228B (en) | A kind of Electroabsorption Modulated Laser and preparation method thereof | |
| KR100553317B1 (en) | Silicon nanowires and optoelectronic devices and preparing method for the same | |
| CN106785904B (en) | DFB semiconductor laser and preparation method thereof | |
| TWI419349B (en) | Method for producing a silicon solar cell with a back-etched emitter as well as a corresponding solar cell | |
| KR100668964B1 (en) | Light emitting device with nano-groove and method for fabricating the same | |
| Shi et al. | Anisotropic charge transport enabling high‐throughput and high‐aspect‐ratio wet etching of silicon carbide | |
| CN106785887B (en) | A kind of hybrid laser and preparation method thereof of polymer auxiliary bonding | |
| CN107078190A (en) | For GaN vertical microcavity surface-emitting lasers（VCSEL）Method | |
| US10193303B2 (en) | Semiconductor laser diode, method for producing a semiconductor laser diode and semiconductor laser diode arrangement | |
| JP2001267622A (en) | Semiconductor device and manufacturing method thereof | |
| CN109166878A (en) | Nano-pore LED array chip and preparation method thereof with anti-reflection passivation layer | |
| CN108321242B (en) | Optical detector and preparation method thereof based on graphene and coupling grating | |
| CN107528214B (en) | Preparation method of terahertz quantum cascade laser with bimetal waveguide structure and laser | |
| CN107634033B (en) | The inexpensive heterogeneous integrated approach in multi-chip constituency based on CMOS silicon based platform | |
| CN106784213A (en) | A kind of ring cavity nano wire electrical pumping single-photon source device | |
| TW202032811A (en) | Deep ultraviolet led device and manufacturing method therefor | |
| CN104409561A (en) | Silicon thin film photodetector based on microballoon optical resonance enhancement, and preparation method thereof | |
| CN102916338B (en) | A method of making GaAs base semiconductor laser non-absorbing windows | |
| CN105529615B (en) | A kind of semiconductor laser and preparation method thereof | |
| KR0146713B1 (en) | Fabrication method of surface emission micro-laser | |
| CN107863384A (en) | Injection enhancing buffer layer structure and the SiC light triggered thyristors containing the structure | |
| KR0185498B1 (en) | High-powered quantum wire array laser diode structure | |
| CN108493768A (en) | The preparation method of ridge waveguide structure laser P-type electrode | |
| US10754093B2 (en) | Fabrication process of polymer based photonic apparatus and the apparatus | |
| CN209766421U (en) | Nano-hole LED array chip with anti-reflection passivation layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |