CN108493768A - The preparation method of ridge waveguide structure laser P-type electrode - Google Patents
The preparation method of ridge waveguide structure laser P-type electrode Download PDFInfo
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- CN108493768A CN108493768A CN201810314483.0A CN201810314483A CN108493768A CN 108493768 A CN108493768 A CN 108493768A CN 201810314483 A CN201810314483 A CN 201810314483A CN 108493768 A CN108493768 A CN 108493768A
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- laser
- ridge waveguide
- waveguide structure
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- layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Abstract
A kind of preparation method of ridge waveguide structure laser P-type electrode, including following making step：Step 1：Grow active layer, the first contact layer and the second contact layer successively on substrate；Step 2：Etching, the intermediate ridge waveguide structure for forming laser on active layer；Step 3：Silicon dioxide insulating layer is prepared in the both sides of ridge waveguide structure and active layer；Step 4：Using counter-rotative type photoresist, the electrode pattern of laser is made by lithography；Step 5：Using the method for confocal sputtering, Lift-off technique, sputtering successively grows titanium/platinum/gold three-layer metal thin layer；Step 6：The photoresist except stripping electrode figure is impregnated in acetone, then electrode is made by lithography using reversion glue and needs the figure thickeied, and cleavage gap is left at laser cavity surface cleavage；Step 7：Using electric plating method, thick gold thin film is electroplated out；Step 8：It impregnates in acetone and removes photoresist, complete the preparation of ridge waveguide structural semiconductor laser electrode.
Description
Technical field
The present invention relates to semiconductor photoelectronic device field, more particularly to a kind of ridge waveguide structure laser P-type electrode
Preparation method.
Background technology
With the fast development of Internet technology, optical communication system obtains continuous dilatation and upgrading, and light emitting devices is made
For the core component of optical communication system, the demand of bandwidth and quantity also shows the rising of exponential form.Currently on the market
Light emitting devices includes distributed feedback laser (DFB), Electroabsorption Modulated Laser (EML), distribution bragg tunable laser
Device (DBR) and various integrated devices based on laser and modulator and array device etc..Performance based on light emitting devices
And cost consideration, these devices mostly use ridge waveguide structure.The laser of ridge waveguide structure is due to being cloth on p-type surface
The out-of-flatness surface of full ridge structure, will meet two requirements when preparing P-type electrode：First, the surface and side of ridge waveguide
Metal step coverage will be got well；Second is that the golden film at electrode pressure welding is sufficiently thick, pressure welding pulling force reliability when meeting device encapsulation
It is required that.
To meet the preparation requirement of P-type electrode, the preparation of ridge waveguide structure laser P-type electrode at present mostly uses two kinds
Method, one is technique is filled and led up using polymer, in ridge waveguide surface spin on polymers, hot setting, dry etching goes out wave
The contact window of conducting shell, then prepare electrode using Lift-off technique or electroplating technology is added and thicken gold electrode, this method
Although solving the problems, such as two of P-type electrode and improving the bandwidth of device, be the introduction of complexity fills and leads up technique, for nothing
It needs polymer to disclosure satisfy that the device of bandwidth requirement, undoubtedly increases production cost；Another method is direct large area deposition
Titanium/platinum/gold thin electrodes, then band glue is thick metal plated, and the metal except power down pole, this side are integrally etched using dry etching
Although method can prepare the electrode met the requirements, dry etching is introduced, if the rate of dry etching cannot be accurately controlled,
Over etching will cause to damage to contact layer surface, and the etch rate of platinum is much smaller than the etch rate of gold, large area etching pair
The waste especially severe of gold.
The present invention proposes a kind of preparation method of ridge waveguide structure laser P-type electrode.Avoid above two method
The shortcomings that, while meeting two requirements of ridge waveguide structure laser P-type electrode reliability.
Invention content
The main purpose of the present invention is to provide a kind of preparation methods of ridge waveguide structure laser P-type electrode.It solves
The ridge waveguide structure laser P-type electrode for meeting product reliability requirement, solves the surface of ridge waveguide and the metal of side
Step coverage concern solves the requirement of pressure welding pulling force reliability when the golden film thickness at P-type electrode pressure welding meets device encapsulation.
In order to achieve the above objectives, the present invention provides a kind of preparation methods of ridge waveguide structure laser P-type electrode, should
Method includes the following steps：
Step 1：Grow active layer, the first contact layer and the second contact layer successively on substrate；
Step 2：Etching, the intermediate ridge waveguide structure for forming laser on active layer；
Step 3：Silicon dioxide insulating layer is prepared in the both sides of ridge waveguide structure and active layer；
Step 4：Using counter-rotative type photoresist, the electrode pattern of laser is made by lithography；
Step 5：Using the method for confocal sputtering, Lift-off technique, sputtering growth titanium/platinum/gold three-layer metal is thin successively
Layer；
Step 6：The photoresist except stripping electrode figure is impregnated in acetone, then electrode needs are made by lithography using reversion glue
The figure of thickening, and cleavage gap is left at laser cavity surface cleavage；
Step 7：Using electric plating method, thick gold thin film is electroplated out；
Step 8：It impregnates in acetone and removes photoresist, complete the preparation of ridge waveguide structural semiconductor laser electrode.
It can be seen from the above technical proposal that the invention has the advantages that：
Titanium/platinum/gold electrode is prepared using the method for confocal sputtering, can ensure the surface of ridge waveguide and the metal of side
Step coverage provides uniform metallic conductivity for electroplating technology below, keeps the golden film that plating goes out relatively uniform.
Since the Step Coverage and Lift-off technique of ridge waveguide are the technique of conflict, step coverage causes well
Metal forms continuous film in the side of stripping glue, is difficult to peel photoresist off if metal layer is too thick, so controlling in the present invention
The thickness of titanium/platinum/gold thin film not only ensure that the Step Coverage of ridge waveguide, but also photoresist lift off is compared in 100nm or so
It is easy, stripping edge quality is relatively high.
Cleavage gap is left when plating at laser cavity surface cleavage, prevents at cleavage golden film is too thick to be not easy cleavage, destroys
The natural cleavage plane of laser；It solves former technique again and deliberately leaves cleavage ditch before preparing electrode, form one section without electricity
The uptake zone of pole covering.
Description of the drawings
For the content further illustrated the present invention, with reference to embodiments and attached drawing the present invention is described further,
For a better understanding, side view and vertical view is set forth in each step, two laser periods are given in vertical view,
Wherein：
Fig. 1 is the preparation flow figure of the present invention；
Fig. 2 a- Fig. 6 b are the structure chart of preparation process of the present invention.Wherein：
Fig. 2 a are the ridge waveguide structure that laser is prepared in the InP substrate of growth active layer and contact layer material,
Growth silicon dioxide insulating layer simultaneously outputs contact window；
Fig. 2 b are the vertical view of Fig. 2 a；
Fig. 3 a are the electrode pattern for making laser by lithography using counter-rotative type photoresist；
Fig. 3 b are the vertical view of Fig. 3 a；
Fig. 4 a are using Lift-off technique, and sputtering successively grows titanium/platinum/gold three-layer metal thin layer；
Fig. 4 b are the vertical view of Fig. 4 a；
Fig. 5 a are to make the figure that electrode needs to thicken by lithography using reversion glue, and leave cleavage at laser cavity surface cleavage
Gap；
Fig. 5 b are the vertical view of Fig. 5 a；
Fig. 6 a are that thick gold thin film, and stripping photoresist is electroplated out with electric plating method.
Fig. 6 b are the vertical view of Fig. 6 a.
Specific implementation mode
Referring to Fig. 1, and in conjunction with refering to shown in Fig. 2 a- Fig. 6 b, the present invention provides a kind of ridge waveguide structure laser P
The preparation method of type electrode, this method comprises the following steps：
Step 1：Grow active layer 2, the first contact layer 4 and the second contact layer 5 successively on substrate 1；The Material growth mistake
The method of Cheng Caiyong metal organic chemical compound vapor depositions, growth temperature are 650 DEG C, growth pressure 22mbar, active layer packet
Containing lower limit layer, thickness 100nm, 6 Quantum Well and 7 barrier layer, quantum well thickness 4nm, barrier thickness 10nm, upper limitation
Layer thickness is 100nm.First contact layer, 4 thickness is 1.5 μm, and 5 thickness of the second contact layer is 200nm, the first contact layer and second
Contact layer is p-type doping；
Step 2：By photoresist masking, wet etching the first contact layer 4 and the second contact layer 5, the corruption of the second contact layer 5
Erosion liquid is hydrobromic acid: water=1: 3, etching time is 40 seconds, and the corrosive liquid of the first contact layer 4 is hydrochloric acid: water=4: and 1, when corrosion
Between be 4 minutes, the intermediate ridge waveguide structure for forming laser on active layer 2；The width of ridge waveguide is 3 μm；
Step 3：Layer of silicon dioxide insulating film, thickness 350nm are grown on the surface of entire substrate, growth temperature is
300 DEG C, radio-frequency power 60W, reaction gas SiH4、N2O and N2, gas flow be respectively 160sccm, 260sccm and
80sccm.By photoresist masking and wet etching, the uppermost silicon dioxide etching of ridge waveguide is fallen, corrosive liquid used is
BOE, etching time are 1 minute, the silicon dioxide insulating layer 3 being retained in above the both sides and active layer 2 of ridge waveguide structure；
Step 4：Using counter-rotative type photoresist 6, model AZ5214, spin coating rate is 3000-5000 revs/min, front baking
Temperature is 100 DEG C, and the time is 1 minute, and the prior exposure time is 50 seconds, and it is 120 DEG C that temperature is dried in reversion, and the time is 1 minute, and reversion exposes
Light is 80 seconds, and developing time is 20 seconds, is washed by water 2 minutes.It makes the electrode pattern of laser by lithography, and is formed at the edge of photoresist
Pattern is cut, the thickness of the reversal photoresist 6 is 1-5 μm；
Step 5：Using the method for confocal sputtering, Lift-off technique, sputtering growth titanium/platinum/gold three-layer metal is thin successively
Layer 7 carries out the reversed prerinse of 30mW, pressure 5mtor before sputtering, gas is argon gas, and the time is 20 seconds, substrate rotation speed
Degree is 15 revs/min.Power used in sputtered titanium/platinum/gold three-layer metal thin layer 7 is 150W, pressure 5mtor, substrate rotation speed
Degree is 15 revs/min, and substrate does not heat when the sputtering, and the thickness of sputtering is 50-300nm；
Step 6：The photoresist 6 except stripping electrode figure is impregnated in acetone, then makes electrode by lithography using reversion glue 6 to need
The figure to be thickeied, using counter-rotative type photoresist 6, model AZ5214, spin coating rate is 3000-5000 revs/min, front baking temperature
Degree is 100 DEG C, and the time is 1 minute, and the prior exposure time is 50 seconds, and it is 120 DEG C that temperature is dried in reversion, and the time is 1 minute, reversion exposure
It it is 80 seconds, developing time is 20 seconds, is washed by water 2 minutes.Electrode thicken figure be less than or equal to sputtering electrode pattern, and
Cleavage gap 9 is left at laser cavity surface cleavage, the cleavage gap 9 left at laser cavity surface cleavage is 10-100 μ
m；
Step 7：Using electric plating method, thick gold thin film 8 is electroplated out, the temperature of plating is 50 DEG C, electroplating voltage 0.4V,
Electric current is 0.0018A.The thickness of the thickness gold thin film 8 is 500nm-2 μm；
Step 8：It impregnates in acetone and removes photoresist 6, substrate is cleaned up, complete ridge waveguide structural semiconductor and swash
The preparation of light device electrode.
It should be noted that in attached drawing or specification text, the realization method for not being painted or describing is affiliated technology
Form known to a person of ordinary skill in the art, is not described in detail in field.In addition, the above-mentioned definition to each element and method is simultaneously
It is not limited only to various concrete structures, shape or the mode mentioned in embodiment, those of ordinary skill in the art can carry out letter to it
It singly changes or replaces.
Claims (5)
1. a kind of preparation method of ridge waveguide structure laser P-type electrode, including following making step：
Step 1：Grow active layer, the first contact layer and the second contact layer successively on substrate；
Step 2：Etching, the intermediate ridge waveguide structure for forming laser on active layer；
Step 3：Silicon dioxide insulating layer is prepared in the both sides of ridge waveguide structure and active layer；
Step 4：Using counter-rotative type photoresist, the electrode pattern of laser is made by lithography；
Step 5：Using the method for confocal sputtering, Lift-off technique, sputtering successively grows titanium/platinum/gold three-layer metal thin layer；
Step 6：The photoresist except stripping electrode figure is impregnated in acetone, then electrode is made by lithography using reversion glue and needs to thicken
Figure, and cleavage gap is left at laser cavity surface cleavage；
Step 7：Using electric plating method, thick gold thin film is electroplated out；
Step 8：It impregnates in acetone and removes photoresist, complete the preparation of ridge waveguide structural semiconductor laser electrode.
2. the preparation method of ridge waveguide structure laser P-type electrode according to claim 1, wherein reversal photoresist
Thickness is 1-5 μm.
3. the preparation method of ridge waveguide structure laser P-type electrode according to claim 1, wherein substrate is not when sputtering
The thickness of heating, sputtering is 50-300nm.
4. the preparation method of ridge waveguide structure laser P-type electrode according to claim 1, wherein in laser cavity surface
The cleavage gap left at cleavage is 10-100m.
5. the preparation method of ridge waveguide structure laser P-type electrode according to claim 1, wherein the thickness of thick gold thin film
Degree is 500nm-2 μm.
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| CN201810314483.0A CN108493768A (en) | 2018-04-10 | 2018-04-10 | The preparation method of ridge waveguide structure laser P-type electrode |
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| CN201810314483.0A CN108493768A (en) | 2018-04-10 | 2018-04-10 | The preparation method of ridge waveguide structure laser P-type electrode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111244756A (en) * | 2020-03-12 | 2020-06-05 | 中国科学院半导体研究所 | Semiconductor laser and method for manufacturing the same |
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| US20110226336A1 (en) * | 2010-03-17 | 2011-09-22 | Gerbi Jennifer E | Chalcogenide-based materials and improved methods of making such materials |
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| CN1838493A (en) * | 2005-03-24 | 2006-09-27 | 中国科学院半导体研究所 | Method for preparing InGaAs/InGaAsP quantum well laser with long wavelength and big strain |
| CN1800983A (en) * | 2005-12-31 | 2006-07-12 | 厦门大学 | Anti-stripping photolithography method for integrated circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111244756A (en) * | 2020-03-12 | 2020-06-05 | 中国科学院半导体研究所 | Semiconductor laser and method for manufacturing the same |
| CN111244756B (en) * | 2020-03-12 | 2021-04-23 | 中国科学院半导体研究所 | Semiconductor laser and method for manufacturing the same |
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