CN107508128B - Thermally tuned TWDM-PON laser and manufacturing method thereof - Google Patents
Thermally tuned TWDM-PON laser and manufacturing method thereof Download PDFInfo
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- CN107508128B CN107508128B CN201710743676.3A CN201710743676A CN107508128B CN 107508128 B CN107508128 B CN 107508128B CN 201710743676 A CN201710743676 A CN 201710743676A CN 107508128 B CN107508128 B CN 107508128B
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- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/1028—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the temperature
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Abstract
The invention relates to the technical field of lasers, and provides a thermally tuned TWDM-PON laser and a manufacturing method thereof. Wherein, an etching stop layer 105 is arranged between the multiple quantum well layer 104 and the upper limiting layer 106 in the laser, a mesa ridge waveguide 211 structure is etched on the etching stop layer 105, and the laser also comprises: a dielectric film 212 is deposited in the ridge waveguide channel, a metal resistor strip 213 is manufactured on the dielectric film 212, and the metal resistor strip 213 is powered by a metal electrode 214 manufactured in the ridge waveguide channel. The invention provides a thermally tuned laser, wherein a resistor strip is isolated from an active region through a dielectric film, so that the problem that the light emitting quality of the active layer is influenced by arranging the resistor strip in the active layer in the prior art is solved, the problem that the carrier recombination of the active region of the laser is directly influenced by electric injection is solved, and the performance and the service life of the laser are improved.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of lasers, in particular to a thermally tuned TWDM-PON laser and a manufacturing method thereof.
[ background of the invention ]
TWDM-PON technology, as currently the most promising fiber-optic communication technology, has many unique advantages. Compared with the current main optical fiber communication technology, such as Time Division Multiplexing (TDM) evolution scheme, the concept is very close to the current PON system, but the technical scheme requires each optical Terminal (ONT) to operate at a line speed of 40Gbps, which is far beyond the prediction of the market for the individual user requirements of the Terminal, resulting in high cost and difficult solution of dispersion problem; dense wavelength division multiplexing passive Optical Network (DWDM-PON) technology supports to transmit a plurality of wavelengths on one Optical fiber, but the technology has high cost, cannot realize bandwidth sharing among users, and has complex operation and maintenance; the time division and wavelength division multiplexing based PON (TWDM-PON) technology can realize higher bandwidth (the total bandwidth is up to 40Gbps, and each user can realize up to 10Gbps), and also provides the optimal flexibility for bandwidth adjustment of each user, optical fiber management, service fusion, resource sharing, and the like. These improvements have resulted in a 30% reduction in TWDM over DWDM in equipment asset investment (CAPEX), while also significantly reducing maintenance complexity. Therefore, the TWDM technology combines the advantages of TDM and DWDM systems, and is the most ideal choice for NG-PON2 (English is called as Next-Generation Passive Optical Network).
The wavelength adjustment of the conventional commercial laser is generally realized by temperature tuning, a common temperature tuning method adopts a resistance type heating mode, the working temperature of the laser is influenced by electrifying and heating an external resistor strip, the emission wavelength of the laser and the working temperature are in a linear change relationship, and the wavelength tuning of the laser can be realized by temperature tuning on the basis of not influencing the light-emitting quality of the laser. However, resistance temperature tuning requires that the resistance heating is larger than the heating of the normal working point of the laser, and the resistance heating efficiency and energy consumption become important parameters of the temperature tuning laser. Common resistive heating methods temperature tuned lasers are as follows:
the cavity external heating source (application number 200580014786.1) is heated by the external controllable heating source of the laser, but the cost is high, the manufacturing process is complicated, the resistance strip is far away from the heating area of the laser, the thermal efficiency is not high, the temperature response speed is not high, and the requirement of a high-speed laser chip cannot be met; the resistor strip is arranged on the surface of the laser device as the most common means, but the problem that the resistor strip is far away from the heating area of the laser device and has low thermal efficiency still exists.
The resistance strip is arranged in the laser active area (application number 201110165778.4), and this kind of mode thermal efficiency is the highest, directly acts on the laser heating area, but because the resistance strip passes through the electrical injection heating, the electrical injection can directly influence the recombination of laser active area carrier, leads to there being great risk in the laser luminous quality, reduces the performance and the life-span of laser.
[ summary of the invention ]
The technical problem to be solved by the embodiment of the invention is that the resistor strip is arranged in the laser active area (application number 201110165778.4), the mode has highest thermal efficiency and directly acts on a laser heating area, but as the resistor strip is heated through electric injection, the electric injection can directly influence the recombination of carriers in the laser active area, so that the light emitting quality of the laser has higher risk, and the performance and the service life of the laser are reduced. The cavity external heating source (application number 200580014786.1) is heated by the external controllable heating source of the laser, but the cost is high, the manufacturing process is complicated, the resistance strip is far away from the heating area of the laser, the thermal efficiency is not high, the temperature response speed is not high, and the requirement of a high-speed laser chip cannot be met; the resistor strip is arranged on the surface of the laser device as the most common means, but the problem that the resistor strip is far away from the heating area of the laser device and has low thermal efficiency still exists.
The embodiment of the invention adopts the following technical scheme:
in a first aspect, the present invention provides a thermally tuned TWDM-PON laser, including a substrate 101, a buffer layer 102, a lower confinement layer 103, a multiple quantum well layer 104, an upper confinement layer 106, a grating layer 107, and an ohmic contact layer 108, wherein an etch stop layer 105 is disposed between the multiple quantum well layer 104 and the upper confinement layer 106, a mesa ridge waveguide 211 structure is etched on the etch stop layer 105, and the laser further includes:
a dielectric film 212 is deposited in the ridge waveguide channel, a metal resistor strip 213 is manufactured on the dielectric film 212, and the metal resistor strip 213 is powered by a metal electrode 214 manufactured in the ridge waveguide channel.
Preferably, the ridge waveguide channel provided with the metal resistor strip 213 and the metal electrode 214 is filled with a dielectric film 215.
Preferably, the width of the upper surface of the mesa-shaped ridge waveguide 211 is wider than that of the lower surface by a preset distance, and the preset distance is used for forming a space of the preset distance between the metal resistor strip 213 and the side wall of the ridge waveguide 211 when the metal resistor strip 213 is manufactured.
Preferably, the preset distance is specifically 0.2 to 0.8 μm.
Preferably, the metal resistor strip 213 has a strip structure and is disposed along an extending direction of one side of the ridge waveguide 211, wherein the metal electrode 214 includes a first metal electrode 2141 and a second metal electrode 2142, and the first metal electrode 2141 and the second metal electrode 2142 are respectively connected to two ends of the metal resistor strip 213 having the strip structure.
Preferably, the material of the dielectric film 212 is SiO2Or SiNxWith a thickness of
。
In a second aspect, the present invention further provides a method for manufacturing a thermally tuned TWDM-PON laser, including an epitaxial wafer composed of a substrate 101, a buffer layer 102, a lower confinement layer 103, a multiple quantum well layer 104, an upper confinement layer 106, a grating layer 107, and an ohmic contact layer 108, wherein an etch stop layer 105 is disposed between the multiple quantum well layer 104 and the upper confinement layer 106 of the epitaxial wafer, and the method further includes:
making a ridge waveguide pattern by photoresist masking, exposing and developing, and corroding in a corrosive liquid to obtain a deep groove 210 and form an inverted-mesa ridge waveguide structure 211;
growing a dielectric film 212, wherein the dielectric film 212 is deposited on the side surface of the mesa ridge waveguide 211 and the surface of the deep trench 210;
removing the photoresist masking layer, and removing the dielectric film on the surface of the mesa ridge waveguide 211 along with the photoresist attached to the dielectric film to expose the surface of the mesa ridge waveguide 211;
the metal resistor strips 213 and the metal electrodes 214 are formed by sputtering deposition.
Preferably, after the metal resistor strips 213 and the metal electrodes 214 are manufactured, a masking pattern is formed through photo-etching and developing of a photosensitive photoresist, and the region where the deep trench 210 is located is exposed;
the dielectric film 215 is thermally evaporated and the deep trench 210 provided with the metal resistive bar 213 is filled to the top surface of the mesa ridge waveguide 211.
Preferably, the width of the upper surface of the inverted platform is wider than that of the lower surface by a preset distance, and the preset distance is used for forming a space of the preset distance between the metal resistor strip 213 and the side wall of the ridge waveguide 211 when the metal resistor strip 213 is manufactured.
Preferably, the metal resistor strip 213 has a strip structure and is disposed along an extending direction of one side of the ridge waveguide 211, wherein the metal electrode 214 includes a first metal electrode 2141 and a second metal electrode 2142, and the first metal electrode 2141 and the second metal electrode 2142 are respectively connected to two ends of the metal resistor strip 213 having the strip structure.
The invention provides a thermally tuned laser, wherein a resistor strip is isolated from an active region through a dielectric film, the problem that the light emitting quality of the active layer is influenced by the fact that the resistor strip is arranged in the active layer in the prior patent (application No. 201110165778.4) is solved, the problem that the carrier recombination of the active region of the laser is directly influenced by electric injection is solved, and the performance and the service life of the laser are improved. And the processing difficulty is reduced and the heating efficiency is improved relative to an external cavity heating source (application No. 200580014786.1).
In a preferred embodiment of the present invention, the ridge waveguide channel provided with the metal resistive bar 213 and the metal electrode 214 may be filled with a dielectric film 215, so as to further suppress heat dissipation after heating of the resistive bar, which is beneficial to thermal efficiency of the resistive bar and improve energy efficiency of the laser.
[ description of the drawings ]
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a side view of a thermally tuned TWDM-PON laser structure according to an embodiment of the invention;
FIG. 2 is a front view of a thermally tuned TWDM-PON laser structure according to an embodiment of the invention;
FIG. 3 is a top view of a thermally tuned TWDM-PON laser structure according to an embodiment of the invention;
FIG. 4 is a side view of another thermally tuned TWDM-PON laser structure provided by embodiments of the invention;
fig. 5 is a flowchart of a method for manufacturing a thermally tuned TWDM-PON laser according to an embodiment of the present invention.
[ detailed description ] embodiments
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, the terms "inner", "outer", "longitudinal", "lateral", "upper", "lower", "top", "bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are for convenience only to describe the present invention without requiring the present invention to be necessarily constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1:
the embodiment of the invention provides a thermally tuned TWDM-PON laser, which comprises a substrate 101, a buffer layer 102, a lower limiting layer 103, a multi-quantum well layer 104, an upper limiting layer 106, a grating layer 107 and an ohmic contact layer 108, wherein an etching stop layer 105 is arranged between the multi-quantum well layer 104 and the upper limiting layer 106, and a mesa ridge waveguide 211 structure is etched on the etching stop layer 105, as shown in FIG. 1, FIG. 2 and FIG. 3.
The mesa ridge waveguide 211 structure is etched by a wet method through a photoresist mask pattern, and the etching depth is accurately controlled to be close to the upper part of the multiple quantum wells. The precise control of the etch depth depends on the difference in etch rate between the etch stop layer 105 and other materials (e.g., the upper limiting layer 106, the grating layer 107, and the ohmic contact layer 108), and the greater the etch stop layer's ability to resist corrosion, the easier the etch depth can be controlled.
The laser specifically further comprises: a dielectric film 212 is deposited in the ridge waveguide channel, a metal resistor strip 213 is manufactured on the dielectric film 212, and the metal resistor strip 213 is powered by a metal electrode 214 manufactured in the ridge waveguide channel.
Wherein, the material of the dielectric film 212 preferably adopts SiO2Or SiNxWith a thickness of
. Typical values commonly used are
The embodiment of the invention provides a thermally tuned laser, wherein a resistor strip is isolated from an active region through a dielectric film, so that the problem that the light emitting quality of the active region is influenced by the fact that the resistor strip is arranged in the active layer in the prior patent (application No. 201110165778.4) is solved, the problem that the carrier recombination of the active region of the laser is directly influenced by electric injection is solved, and the performance and the service life of the laser are improved. And the processing difficulty is reduced and the heating efficiency is improved relative to an external cavity heating source (application No. 200580014786.1).
In the application and implementation process of the embodiment of the present invention, in order to further suppress heat dissipation after heating of the resistor strip, which is beneficial to the thermal efficiency of the resistor strip and improves the energy efficiency of the laser, an extensible implementation scheme exists in combination with the embodiment of the present invention, specifically: the ridge waveguide channel provided with the metal resistor strips 213 and the metal electrodes 214 is filled with a dielectric film 215. The dielectric film 215 not only can improve the thermal efficiency of the resistor strip and reduce the thermal dissipation, but also can improve the coupling tightness between the resistor strip and the metal electrode and the epitaxial wafer, thereby preventing the reduction of the surface coupling tightness between the resistor strip 213 and the dielectric film 212 caused by long-term temperature control of the resistor strip.
In the implementation process of the embodiment of the present invention, in consideration of ensuring that the metal resistor strip is very close to the ridge waveguide structure 211 and does not adhere to the sidewall of the ridge waveguide structure, so that the width of the metal resistor strip is not controllable, in the implementation process of embodiment 1 of the present invention, there is a preferable implementation scheme that can effectively achieve the above object, specifically, the width of the upper surface of the mesa ridge waveguide 211 is wider than the width of the lower surface by a preset distance (that is, the mesa ridge waveguide is specifically represented as an inverted mesa ridge waveguide), and the preset distance is used for forming a gap of the preset distance between the metal resistor strip 213 and the sidewall of the ridge waveguide 211 when the metal resistor strip 213 is manufactured. Wherein the lower surface of the mesa ridge waveguide 211 is its interface with the etch stop layer 105.
The realization principle is as follows: by the self masking effect of the inverted-mesa ridge waveguide structure, the metal resistor strip is closer to the ridge waveguide quantum well active region in the transverse dimension and has stable process, and by etching the corrosion stop layer 105 on the upper surface of the multiple quantum well layer 104, the metal resistor strip is closer to the quantum well active region in the longitudinal dimension, so that the heat conduction loss is greatly reduced, and the heat efficiency of the resistor strip is improved. The metal resistance strip is isolated from the ridge waveguide through the dielectric film, and the injected current is prevented from influencing the light emission of the quantum well active layer. The preset distance is specifically 0.2-0.8 μm. A typical value commonly used is 0.2 μm.
In the embodiment of the present invention, the metal resistor strip 213 has a strip structure and is disposed along an extending direction of one side of the ridge waveguide 211, wherein the metal electrode 214 includes a first metal electrode 2141 and a second metal electrode 2142, and the first metal electrode 2141 and the second metal electrode 2142 are respectively connected to two ends of the metal resistor strip 213 having the strip structure.
In a specific fabrication method, the metal resistor strips 213 and the metal electrodes 214 can be formed simultaneously by sputter deposition, and the material is preferably Ti/Pt/Au, and is typically thickDegree Ti:
Pt：
Au：
due to the inverted mesa ridge waveguide structure, the metal resistive bar 213 is deposited on the dielectric film 212 in the deep trench by sputtering without connecting the ridge waveguide sidewalls. The metal resistance strip 213 material can be compatible with the electrode material, and the metal resistance strip 213 has small width, long length and larger resistance value and plays a better heating efficiency role after being electrified; the pattern of the metal electrode 214 on the upper surface of the epitaxial wafer may be rectangular, circular or other similar patterns (as shown in fig. 3, the pattern of the metal electrode 214 is a schematic diagram showing the effect of a rectangle), the area is large, the resistance is small, the ohmic contact effect is achieved, and the metal electrode 214 is connected with the metal resistor strip 213 for power supply.
The metal resistance strips and the metal electrodes are completed at one time through the same process step, so that the process is simplified; the metal resistance strips are buried in the dielectric film, so that the heat radiation loss can be effectively reduced, and the energy consumption of the whole system is reduced.
Compared with the schematic diagrams 1 and 3 provided in embodiment 1 and having the metal resistive stripes 213 and the metal electrodes 214 fabricated in the single-sided deep trench 210, the embodiment of the present invention further provides a structural schematic diagram of disposing the metal resistive stripes 213 and the metal electrodes 214 in the double deep trench, as shown in fig. 4, in terms of higher heating efficiency.
Example 2:
the embodiment of the invention also provides a manufacturing method of a thermally tuned TWDM-PON laser, which comprises an epitaxial wafer composed of a substrate 101, a buffer layer 102, a lower limiting layer 103, a multiple quantum well layer 104, an upper limiting layer 106, a grating layer 107 and an ohmic contact layer 108, and is characterized in that an etch stop layer 105 is arranged between the multiple quantum well layer 104 and the upper limiting layer 106 of the epitaxial wafer, as shown in fig. 5, the method further comprises:
in step 201, a ridge waveguide pattern is formed by masking, exposing and developing with a photoresist, and etched in an etchant to obtain a deep trench 210, thereby forming an inverted mesa ridge waveguide structure 211.
After the epitaxial wafer is etched to the etch stop layer 105, the length of the time for further soaking the epitaxial wafer in the etching solution can be controlled to meet the setting requirement that the width of the upper surface of the inverted platform is wider than the width of the lower surface by a preset distance.
In step 202, a dielectric film 212 is grown, and the dielectric film 212 is deposited on the sides of the mesa ridge waveguide 211 and the surface of the deep trench 210.
Wherein, the material of the dielectric film 212 can be SiO2Or SiNxWith a thickness of
In step 203, the photoresist mask layer is removed, and the dielectric film on the surface of the mesa-shaped ridge waveguide 211 is removed along with the photoresist attached thereto, so as to expose the surface of the mesa-shaped ridge waveguide 211.
The photoresist masking layer can be removed through acetone or NsMP, and preparation is made for manufacturing the metal resistance strip and the metal electrode in the next step. The surface of the exposed ridge waveguide 211 is shown as being in ohmic contact with the laser electrode, and is formed with the resistor strips and the electrodes of the resistor strips in step 204.
In step 204, a patterned masking layer of metal resistor strips 213 and metal electrodes 214 is formed by exposure and development of a photosensitive photoresist, and the metal resistor strips 213 and the metal electrodes 214 are formed by sputter deposition.
In the embodiment of the present invention, the metal resistor strips 213 are formed by a sputtering process and vertical deposition, and since the inverted mesa is not deposited on the sidewalls, and the dielectric film 212 is deposited by thermal evaporation, the deposition not only vertically but also laterally spreads, so the sidewalls can be deposited with a thickness slightly thinner than the surface of the deep trench 210.
The embodiment of the invention provides a manufacturing method of a thermally tuned laser, wherein a resistor strip is isolated from an active region through a dielectric film, so that the problem that the light emitting quality of the active layer is influenced by placing the resistor strip in the active layer in the prior patent (application No. 201110165778.4) is solved, the problem that the carrier recombination of the active region of the laser is directly influenced by electric injection is solved, and the performance and the service life of the laser are improved.
In the application and implementation process of the embodiment of the present invention, in order to further suppress heat dissipation after heating of the resistor strip, which is beneficial to the thermal efficiency of the resistor strip and improves the energy efficiency of the laser, an extensible implementation scheme exists in combination with the embodiment of the present invention, specifically: after the metal resistance strips 213 and the metal electrodes 214 are manufactured, a masking pattern is formed through photoetching and developing of photosensitive photoresist, and the region where the deep groove 210 is located is exposed; the dielectric film 215 is thermally evaporated and the deep trench 210 provided with the metal resistive bar 213 is filled to the top surface of the mesa ridge waveguide 211. The dielectric film 215 not only can improve the thermal efficiency of the resistor strip and reduce the thermal dissipation, but also can improve the coupling tightness between the resistor strip and the metal electrode and the epitaxial wafer, thereby preventing the reduction of the surface coupling tightness between the resistor strip 213 and the dielectric film 212 caused by long-term temperature control of the resistor strip. The material of the dielectric film 215 can be selected by referring to the dielectric film 212, which is not described herein.
In the embodiment of the invention, the metal resistance strip and the metal electrode are made of the same material and are formed by one-time sputtering, so that the process steps are simplified, and the cost is reduced. In addition, the sputtering process basically only vertically deposits, because the width of the upper surface of the mesa ridge waveguide 211 structure is wide, and the width of the bottom area (lower surface) is narrow, in the vertical deposition process, the upper surface of the mesa ridge waveguide 211 can serve as a mask, metal cannot be deposited on the side wall of the masked mesa ridge waveguide 211, a small interval exists between the edge of the bottom area of the inverted mesa ridge waveguide 211 and the metal resistor strip, and the typical value is 0.2 μm. Through the sub-masking function of the inverted-mesa ridge waveguide structure, the metal resistor strip is ensured to be very close to the ridge waveguide structure 211 and cannot be attached to the side wall of the ridge waveguide structure, so that the width of the metal resistor strip is not controllable.
Therefore, during the manufacturing and designing process, the width of the upper surface of the inverted platform is wider than that of the lower surface by a preset distance, and the preset distance is used for forming the interval of the preset distance between the metal resistor strips 213 and the side walls of the ridge waveguide 211 when the metal resistor strips 213 are manufactured. The preset distance is specifically 0.2-0.8 μm.
As shown in fig. 3, in the embodiment of the invention, the metal electrode 214 includes a first metal electrode 2141 and a second metal electrode 2142, and the first metal electrode 2141 and the second metal electrode 2142 are respectively connected to two ends of the metal resistor strip 213 with an elongated structure. The design shape can also be referred to the design shape described in embodiment 1, and is not described in detail here.
Example 3:
compared with embodiment 1, which focuses more on structural explanation, the embodiment of the present invention also combs the parameter configuration available in the art, and the selectable parameters of each layer structure are as follows: the conventional laser structure is characterized in that a buffer layer 102 is extended on an N-type substrate 101 in a thickness of 500-1000 nm; a lower limiting layer 103 with a thickness of 100-200 nm; multiple quantum well 104 with thickness of 30-120 nm; a corrosion barrier layer 105 with a thickness of 10-50 nm; an upper confinement layer 106 with a thickness of 100-200 nm; a grating layer 107 with a thickness of 30-100 μm; and the ohmic contact layer 108 is 1-3 μm thick. And etching the deep trench 210 through photosensitive photoresist masking, exposure and development to form an inverted mesa ridge waveguide structure 211, wherein the width of the upper surface of the inverted mesa ridge waveguide structure 211 is 0.2-0.8 μm wider than that of the small surface.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (7)
1. A thermally tuned TWDM-PON laser, comprising a substrate (101), a buffer layer (102), a lower confinement layer (103), a multiple quantum well layer (104), an upper confinement layer (106), a grating layer (107) and an ohmic contact layer (108), wherein an etch stop layer (105) is arranged between the multiple quantum well layer (104) and the upper confinement layer (106), a mesa ridge waveguide (211) structure is etched on the etch stop layer (105), and the laser further comprises:
depositing a first dielectric film (212) in a ridge waveguide channel, manufacturing a metal resistor strip (213) on the first dielectric film (212), and supplying power to the metal resistor strip (213) through a metal electrode (214) manufactured in the ridge waveguide channel;
the width of the upper surface of the mesa ridge waveguide (211) is wider than that of the lower surface by a preset distance, and the preset distance is used for enabling the metal resistor strip (213) to form a distance of the preset distance relative to the side wall of the mesa ridge waveguide (211) when the metal resistor strip (213) is manufactured; wherein the preset distance is specifically 0.2-0.8 μm.
2. A thermally tuned TWDM-PON laser according to claim 1, wherein the ridge waveguide channel provided with the metal resistive track (213) and the metal electrode (214) is filled with a second dielectric film (215).
3. A thermally tuned TWDM-PON laser according to claim 1 or 2, wherein the metal resistive track (213) is an elongated structure and arranged along the extension of one side of the mesa-ridge waveguide (211), wherein the metal electrode (214) comprises a first metal electrode (2141) and a second metal electrode (2142), and the first metal electrode (2141) and the second metal electrode (2142) are connected to two ends of the elongated structure metal resistive track (213), respectively.
4. A thermally tuned TWDM-PON laser according to claim 1 or 2, wherein the material of the first dielectric film (212) is SiO2Or SiNxThe thickness of the coating is 1000 Å -4000 Å.
5. A method of fabricating a thermally tuned TWDM-PON laser comprising an epitaxial wafer consisting of a substrate (101), a buffer layer (102), a lower confinement layer (103), a multiple quantum well layer (104), an upper confinement layer (106), a grating layer (107) and an ohmic contact layer (108), characterized in that an etch stop layer (105) is provided between the multiple quantum well layer (104) and the upper confinement layer (106) of the epitaxial wafer, the method further comprising:
making a ridge waveguide pattern by photoresist masking, exposing and developing, and corroding in a corrosive liquid to obtain a deep groove (210) and form a mesa ridge waveguide (211);
growing a first dielectric film (212), wherein the first dielectric film (212) is deposited on the side surface of the mesa ridge waveguide (211) and the surface of the deep groove (210);
removing the photoresist masking layer, removing the dielectric film on the surface of the mesa ridge waveguide (211) along with the photoresist attached to the dielectric film, and exposing the surface of the mesa ridge waveguide (211);
forming a pattern masking layer of a metal resistor strip (213) and a metal electrode (214) through exposure and development of photosensitive photoresist, and forming the metal resistor strip (213) and the metal electrode (214) through sputtering deposition;
the width of the upper surface of the mesa ridge waveguide is wider than that of the lower surface by a preset distance, and the preset distance is used for enabling the metal resistor strip (213) to form a gap of the preset distance relative to the side wall of the mesa ridge waveguide (211) when the metal resistor strip (213) is manufactured; wherein the preset distance is specifically 0.2-0.8 μm.
6. The method of claim 5, wherein after the metal resistor (213) and the metal electrode (214) are formed, a mask pattern is formed by photo-etching and developing a photosensitive photoresist to expose the deep trench 210;
and thermally evaporating the second dielectric film (215) and filling the deep groove (210) provided with the metal resistance strip (213) to the top surface of the mesa ridge waveguide (211).
7. A method of fabricating a thermally tuned TWDM-PON laser according to claim 5 or 6, wherein the metal resistive stripes (213) are in an elongated structure and arranged along an extension direction of one side of the mesa-shaped ridge waveguide (211), wherein the metal electrodes (214) comprise a first metal electrode (2141) and a second metal electrode (2142), and the first metal electrode (2141) and the second metal electrode (2142) are respectively connected to two ends of the elongated structure of the metal resistive stripes (213).
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