JP2001267639A - Optical element mounting board and multi-wavelength light source - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent heat of a heater underlying one semiconductor light emitting element from conducting to other semiconductor light emitting elements to avoid changing the oscillation wavelength of the other semiconductor light emitting elements when the heater is driven to adjust the wavelength of the one semiconductor light emitting element. SOLUTION: In a multi-wavelength light source which contains a Peltier element 31 and heaters 16 and mounts a plurality of semiconductor light emitting elements 100, trenches 22 are formed between the semiconductor light emitting elements 100 on a substrate. The oscillation wavelength of all the semiconductor light emitting elements can be controlled under the temperature control by the Peltier element 31 and the oscillation wavelength of each semiconductor light emitting element can be controlled by the individually disposed heaters 16. Owing to the trenches 22 formed between the semiconductor light emitting elements 100 on the substrate, the crosstalk due to heat produced in driving the contained heaters can be suppressed and the oscillation wavelength of each semiconductor light emitting element can be independently controlled.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical element mounting substrate and a multi-wavelength light source, and more particularly, to an optical element mounting for a multi-wavelength light source or the like in which the wavelength of each semiconductor light emitting element can be individually controlled by one module. The present invention relates to a substrate and a multi-wavelength light source.

[0002]

2. Description of the Related Art A conventional multi-wavelength light source has realized a multi-wavelength by preparing a plurality of modules each including one Peltier element and one semiconductor light emitting element and integrating them.
However, the multi-wavelength light source having such a configuration has disadvantages in that the cost is high and the device is large.

In order to improve the above-mentioned problem, the applicant of the present application has disclosed in Japanese Patent Application No.
We proposed a low-cost and compact multi-wavelength light source by arranging a substrate with a built-in heater on which a plurality of semiconductor light-emitting elements were mounted on one Peltier element.

[0004]

In this case, by combining an individual heater and a Peltier element built in the substrate, the oscillation wavelength of each semiconductor light emitting element is set to ITU (international tel.) Which is an international organization for standardizing the oscillation wavelength.
It is possible to match the wavelength specified at 100 GHz intervals recommended by the communication union. However, in the case of this module, when the heater arranged below the semiconductor light emitting element is driven in order to adjust the wavelength of one semiconductor light emitting element, the influence of heat is transmitted to the other semiconductor light emitting elements, However, there is a disadvantage that the oscillation wavelength of the element also slightly changes.

The present invention has been made to solve this problem, and has as its object to drive a heater disposed below a semiconductor light emitting device to adjust the wavelength of the semiconductor light emitting device. Another object of the present invention is to provide an optical element mounting substrate and a multi-wavelength light source that can prevent the influence of heat from being transmitted to other semiconductor light emitting elements, so that the oscillation wavelength of the other elements does not change.

[0006]

An optical element mounting board according to the present invention has a plurality of semiconductor light-emitting elements mounted thereon, and is provided in correspondence with each of the semiconductor light-emitting elements to generate different heat to the corresponding light-emitting elements. An optical element mounting substrate having a body group, comprising: a groove provided between installation positions of the plurality of semiconductor light emitting elements to isolate heat applied to each of the plurality of semiconductor light emitting elements. I do.

[0007] Each heating element of the heating element group is provided below the installation position. The heating element is a heater that generates heat according to an applied current. A multi-wavelength light source according to the present invention includes the above-described optical element mounting substrate and a plurality of semiconductor light-emitting elements provided at the respective installation positions.

In short, according to the present invention, there is provided an optical element mounting board having a plurality of semiconductor light emitting elements mounted thereon and having a heating element group provided for each of the semiconductor light emitting elements and applying different heat to the corresponding light emitting elements. A groove for isolating heat applied to each of the semiconductor light emitting elements is provided between the installation positions of the plurality of semiconductor light emitting elements.

If a multi-wavelength light source is constituted by such a substrate with a built-in heater on which a plurality of semiconductor light emitting elements are mounted and a Peltier element for controlling the heat of the entire substrate, the oscillation of all the semiconductor light emitting elements can be controlled by the temperature control by the Peltier element. The wavelength can be controlled, and the oscillation wavelength of each semiconductor light emitting element can be individually controlled by the individually arranged built-in heaters. Further, since the grooves are formed between the semiconductor light emitting elements on the substrate, heat crosstalk when the built-in heater is driven is suppressed, and the oscillation wavelength of each semiconductor light emitting element can be independently controlled, thereby facilitating use.

[0010]

Next, an embodiment of the present invention will be described with reference to the drawings. In the drawings referred to in the following description, the same parts as those in the other drawings are denoted by the same reference numerals. FIG. 1 is a sectional view showing a configuration of an embodiment of a multi-wavelength light source according to the present invention. As shown in the figure, the multi-wavelength light source according to the present embodiment includes a plurality of semiconductor light emitting devices 100 on a semiconductor light emitting device mounting substrate 200.
Are mounted, and a Peltier element 31 is provided below the substrate 200. The semiconductor light emitting device mounting substrate 200 is mounted on the semiconductor light emitting device 10.
The groove 22 is provided between the 0 installation positions. This groove 2
2, the heat given to each of the semiconductor light emitting elements 100 is isolated, and the heat is not conducted to the adjacent semiconductor light emitting elements 100. Therefore, the heat crosstalk when the heater 16 built in the substrate 200 is driven is suppressed. The oscillation wavelength of each semiconductor light emitting element can be controlled independently. The position where the groove is provided is most commonly at the intermediate position of each semiconductor light emitting element, but it is not necessary to be exactly at the intermediate position, and there is no problem even if the heat applied to each light emitting element can be slightly shifted if it can be isolated. The heater 16 generates heat according to the applied current. The Peltier element 31 generates or absorbs heat according to the applied current.

The structure of the semiconductor light emitting element mounting substrate 200 and the semiconductor light emitting element 100 mounted on the substrate 200 will be described with reference to FIG. FIG. 2 is a cross-sectional view showing a configuration in which attention is paid to one of the semiconductor light emitting devices 100 in FIG. As shown in the figure, a semiconductor light emitting device 100 includes an n-type InP substrate 1 and an InGaAs
P light confinement layer 2 and light emitting layer 3 composed of multiple quantum wells
InGaAsP light confinement layer 4 on which a diffraction grating is formed, p-type InP clad layer 5, p-type InGaAsP
Contact layer 6, p-type InP layer 7, and n-type InP layer 8
And a p-side ohmic electrode 9 and an n-side ohmic electrode 10 formed on the p-type InP cladding layer 6 and the n-type InP substrate 1 for applying a voltage to the light emitting layer 3.

FIG. 3 is a sectional view taken along line AA ′ in FIG. 2 and a bottom view of the semiconductor light emitting device 100. On the bottom surface of the semiconductor light emitting device 100, as shown in FIG. 3, in addition to the p-side ohmic electrode 9, the semiconductor light emitting device 100
An alignment mark 18 serving as a reference for alignment when bonding the semiconductor light emitting element mounting substrate 200 to the semiconductor light emitting element mounting substrate 200 is formed. Further, an antireflection film 11 is formed on one end surface of the semiconductor light emitting element, and a high reflection film 12 is formed on the opposite end surface.

Returning to FIG. 2, the semiconductor light emitting element mounting substrate 2
Reference numeral 00 denotes a Si substrate 14, a first dielectric layer 15 made of, for example, SiO ₂ formed on the Si substrate 14, a heater 16 made of, for example, platinum formed on the first dielectric layer 15, A second dielectric layer 17 made of, for example, SiO ₂ , formed on the heater 16 and on both sides thereof; and a current injection layer formed on the second dielectric layer 17 for injecting a current into the semiconductor light emitting device 100. It comprises an electrode 19 and a solder 13 formed on the current injection electrode 19 and for bonding the semiconductor light emitting element 100.

FIG. 4 is a cross-sectional view taken along the line BB ′ in FIG. 1 and is a top view of the semiconductor light emitting element mounting substrate 200. As shown in the figure, electrodes 19 for current injection, soldering solder 13 for mounting the semiconductor light emitting element, alignment marks 20, and electrodes for flowing current to the heater are provided on the surface of the semiconductor light emitting element mounting substrate. 21 are formed. Here, an example of a method for manufacturing the semiconductor light emitting device and the semiconductor light emitting device mounting substrate as described above will be described below. First, FIG.
A method for manufacturing a semiconductor light emitting device will be described with reference to the flowchart of FIG.

In FIG. 1, first, a non-doped InGaASP optical confinement layer 2 having a forbidden band width of 1.3 μm is formed on an n-type InP substrate 1 by 0.1 μm, about 1 μm.
The non-doped InGaASP optical confinement layer 4 having a thickness of 0.3 μm and a band gap of 1.3 μm in wavelength is grown (step S101). After applying a photoresist on the light confinement layer 4, EB (electron bea
m) A diffraction grating pattern is formed by an exposure method (Step S102). The diffraction grating pattern is transferred to the optical confinement layer 4 by etching using this resist pattern (step S103).

Thereafter, p-type InP is grown to a thickness of 0.5 μm (step S104). Thereafter, a SiO ₂ film is deposited on the surface (Step S105). 1.5 width with photoresist
A μm stripe is formed, and the SiO ₂ film and the semiconductor are etched using the photoresist as a mask (step S106). After removing the photoresist, the p-InP layer 7
Then, an n-InP layer 8 is grown and buried around the active layer 3 (step S107). After removing SiO ₂ , p-In
1.0 μm P layer and 0.3 μm p-type InGaASP
The layers are sequentially grown to form the p-type clad layer 5 and the contact layer 6 (step S108), and the embedded structure is completed.

Next, Ni (10 nm) and Zn are deposited by vapor deposition.
(30 nm) and Au (100 nm) are formed on the InGaASP contact layer 6 (Step S108). At this time, the alignment marks 18 are simultaneously formed by lift-off using a photoresist (Step S109).
Then, the n-type InP substrate 1 is polished to a thickness of about 100 μm.
Then, AuG is deposited on the n-type InP substrate 1 by vapor deposition.
e (100 nm), Ni (20 nm) and Au (500 n)
m) is deposited (step S110). At this time, the position corresponding to the p-side alignment mark 18 is protected by a photoresist so that the electrode metal is not attached.

After the photoresist is removed, the photoresist is removed in a hydrogen atmosphere.
The temperature was raised to 0 ° C.
(50 nm), Pt (100 nm) and Au (800 n)
m) is deposited to form the p-side ohmic electrode 9 and the n-side ohmic electrode 10 (Step S111). Cleaving the semiconductor light emitting device so that the resonator length becomes 600 μm, and EB
After depositing an anti-reflection film 11 on one end surface and a high reflection film 12 on the other end by vapor deposition, the resultant is cleaved for each element to obtain 600.
A semiconductor light emitting device having a size of μm × 400 μm is manufactured (Step S112).

Next, a method of manufacturing an optical element mounting substrate will be described with reference to the flowchart of FIG. In the figure, first, a 1.0 μm thick SiO ₂ film 15 is formed on an aluminum nitride substrate 14 by sputtering.
201). Then, a pattern for the heater 16 is formed using a photoresist at a position directly below the active layer of the semiconductor light emitting device when the semiconductor light emitting device is mounted (step S202). Then, 0.02 μm of titanium and 0.23 μm of platinum are deposited on the SiO ₂ film 15 by vapor deposition, and unnecessary portions are removed by lift-off (step S20).
3). The state of the surface in this state is shown in FIG.
As shown in the figure, the heater 1 to the SiO ₂ film 15
6 are formed. After that, the SiO
_{2 is} deposited to a thickness of 0.5 μm on the entire surface (step S2).
04).

Next, a window pattern is formed using a photoresist so that both ends of the platinum electrode for heater 16 appear on the surface, and the SiO ₂ film 17 is removed by dry etching (step S205). Then, an electrode pattern for wiring of the semiconductor light emitting element, a wiring pattern for heater, and a pattern for alignment mark are formed on the SiO ₂ film 17 (step S206). By depositing Cr (50 nm) and Au (800 nm) on the pattern portion by vapor deposition, the current injection electrode 19, the heater wiring electrode 21, and the mounting substrate side alignment mark 20 are prepared (step S 2).
07). Again, solder 13 made of gold and tin is deposited to a thickness of 2.5 μm on the current injection electrode 19 at a portion to be joined to the light emitting element by lift-off using a photoresist (step S208). After removing the photoresist, a groove 22 is formed in the middle of the portion where the semiconductor light emitting element is mounted using a dicing saw (step S209), and thereafter, the substrate is cut out into an optical element mounting substrate having a size of 4 mm × 6 mm (step S21).
0).

Further, a procedure for mounting the semiconductor light emitting element on the substrate will be described with reference to a flowchart of FIG. In the figure, the semiconductor light emitting element is sucked on the InP substrate 1 side with vacuum tweezers, moved onto a mounting substrate, and moved to an alignment mark 18 on the semiconductor light emitting element and an alignment mark 20 on the mounting substrate by infrared light and an infrared camera. (Step S301). Then, it is heated up to 200 degrees in an atmosphere composed of nitrogen and hydrogen and temporarily bonded (step S302). By performing this operation four times, four semiconductor light emitting elements are mounted on the mounting substrate. Thereafter, the main bonding is performed by heating to 280 degrees in an atmosphere composed of nitrogen and hydrogen (step S304).

Finally, as shown in FIG. 9, the module is completed by attaching the fiber array 23 to a substrate 25 on which a plurality of semiconductor light emitting elements 24 are mounted (step S305). At this time, all the semiconductor light emitting elements 24 were made to emit light, and the fiber array 23 and the substrate 25 were fixed at a position where the optical output from the fiber array 23 was maximized. In addition, the end face of the fiber array was polished diagonally at 5 degrees in order to suppress the light reflected from the end face of the fiber from returning to the semiconductor light emitting element and coupling.

When the Peltier temperature of the multi-wavelength light source manufactured as described above is set to 25 ° C. and a current is applied to each semiconductor light emitting element by 30 mA, the oscillation wavelength of element number 1 becomes 155.
0.72 (nm), oscillation wavelength of element number 2 1551.4
3 (nm), the oscillation wavelength of element number 3 1552.21 (n
m), four wavelengths with an oscillation wavelength of 1552.98 (nm) of element number 4 were obtained. The temperature of the Peltier was set to 26.8 ° C., and 102 (mW) was applied to the heater of the element number 2 and the element number 3
114 (mW) for the heater of No. 19 and 19 for the heater of element number 4
By supplying power of 4 (mW), 1550.92 (mm), 155
1.72 (nm), 1552.52 (nm), 155
Four wavelengths of 3.33 (nm) were obtained. Also in this case,
The amount of wavelength change exerted by one heater on the other semiconductor light emitting devices was 0.01 (nm) or less.

Next, a second embodiment of the present invention will be described. FIG. 10 is a view showing a cross section of the semiconductor light emitting element and the mounting substrate in a mounted state, and FIG. 11 is a bird's-eye view showing an external configuration thereof. In the present embodiment, the cross-sectional shape of the groove 28 between the semiconductor light emitting elements is not rectangular but V-shaped. An example of a method for manufacturing the semiconductor light-emitting element mounting substrate 200 shown in these figures will be described with reference to the flowchart in FIG. Note that the method of manufacturing the semiconductor light emitting device mounted in FIGS. 10 and 11 is the same as that of the first embodiment, and a description thereof will be omitted.

First, a 1.0 μm thick SiO ₂ film 15 is formed by thermally oxidizing the (100) plane silicon substrate 26. Next, a pattern for the optical fiber fixing V-groove 27 and a pattern for the groove 28 formed in the middle of the semiconductor light emitting element are formed by using a photoresist (step S40).
1). After removing the SiO ₂ film 15 by dry etching, the photoresist is also removed, and the silicon substrate 26 is etched using a potassium hydroxide solution using the SiO ₂ film 15 as a mask (step S402). After depositing a 0.5 μm SiO ₂ film 29 over the entire surface by a sputtering method, a pattern for the heater 16 is formed using a photoresist at a position directly below the active layer of the semiconductor light emitting device when the semiconductor light emitting device is mounted (step). S403). Then, by vapor deposition, 0.02 μm titanium and 0.23 μm platinum were converted to S
It is deposited on the iO ₂ film 29, and an excess portion is removed by lift-off (step S404).

Thereafter, the SiO ₂ film 17 is formed by sputtering.
Is deposited on the entire surface by 0.5 μm (step S405).
Next, a window pattern is formed using a photoresist so that both ends of the platinum electrode for heater 16 appear on the surface, and the SiO ₂ film 17 is removed by dry etching (step S).
406). Then, an electrode pattern for wiring of the semiconductor light emitting element, a wiring pattern for heater, and a pattern for alignment mark are formed on the SiO ₂ film 17 (step S4).
07). Cr (50 nm) on the pattern by vapor deposition
Then, Au (800 nm) is deposited to form a current injection electrode 19, a heater wiring electrode 21, and a mounting substrate side alignment mark 20.

The solder 13 made of gold and tin is deposited to a thickness of 2.5 μm on the current-injecting electrode 19 at the portion to be joined to the light-emitting element by lift-off using a photoresist again (step S408). After the photoresist is removed, a rectangular groove 30 for stopping the optical fiber is formed in a direction perpendicular to the V groove 27 using a dicing saw (step S409). Finally, a dicing saw is used to cut out an optical element mounting substrate having a size of 4 mm × 7.5 mm (step S410).

Further, the procedure for mounting the semiconductor light emitting element on the substrate will be described with reference to the flowchart of FIG. In the figure, the semiconductor light emitting element is sucked on the InP substrate 1 side with vacuum tweezers, moved onto a mounting substrate, and moved to an alignment mark 18 on the semiconductor light emitting element and an alignment mark 20 on the mounting substrate by infrared light and an infrared camera. (Step S501). Then, it is heated to 200 degrees in an atmosphere composed of nitrogen and hydrogen and temporarily bonded (step S502). By performing this operation four times, four semiconductor light emitting elements are mounted on the mounting substrate. Thereafter, the main bonding is performed by heating to 280 degrees in an atmosphere composed of nitrogen and hydrogen (step S503).

Thereafter, a multi-core optical fiber is placed on the V-groove 24 on the mounting substrate and pressed until the tip abuts against the rectangular groove 30, and an adhesive is poured in while pressing the optical fiber from above using an optical fiber pressing plate. It is fixed (step S504). As described above, in the present embodiment, since the groove having the V-shaped cross section is employed, it is easy to position and fix the optical fiber having the circular cross section.

When the temperature of the Peltier element of the multi-wavelength light source manufactured as described above is set to 25 ° C. and a current of 30 mA flows through each semiconductor light emitting element, the oscillation wavelength of the element number 1 becomes 1
550.88 (mm), oscillation wavelength 155 of element number 2
1.53 (nm), oscillation wavelength of element number 3 1552.4
5 (nm), oscillation wavelength of element number 4 155.20 (m
m) were obtained. 25. Set the temperature of the Peltier device to 25.
By setting the temperature to 5 ° C. and supplying 189 (mW) to the element number 2 heater, 46 (mW) to the element number 3 heater, and 98 (mW) to the element number 4 heater, the wavelength grid recommended by the ITU is used. 1550.92 (nm), 15
51.72 (nm), 1555.22 (nm), 155
Four wavelengths of 3.33 (nm) were obtained. Also in this case,
The amount of wavelength change exerted by one heater on the other semiconductor light emitting devices was 0.01 (nm) or less.

The case where the grooves are provided between the installation positions of the respective semiconductor light emitting elements has been described above. Since a void is formed by this groove, heat applied to each light emitting element can be isolated. In the above description, the heating element is provided below the installation position of the semiconductor light emitting element. By providing the heating element at this position, the heat generating element is integrated with the substrate, so that heat conductivity is improved. Furthermore, when a Peltier element is used as a heating element, there is an advantage that temperature controllability is good. When the above-described metal heater is used as the heating element, there is an advantage that the heater can be formed by a semiconductor process.

The cross-sectional shape of the groove is determined by the method for forming the groove. For example, if the groove is formed using a dicing saw as in the first embodiment, the groove becomes rectangular, semicircular, V-shaped, or the like according to the shape of the teeth. On the other hand, if the groove is formed by wet etching as in the second embodiment, the groove becomes V-shaped. What is necessary is just to employ | adopt an appropriate formation method according to the material of the position in which a groove | channel is formed. In general,
Although grooves can be formed by wet etching, when grooves are formed in ceramic, they are formed using a dicing saw.

In the first and second embodiments, an InP-based laser is described as a semiconductor light-emitting device. However, a similar effect can be obtained with a GaAs-based light-emitting device or an II-VI-based light-emitting device. Needless to say.
Although the structure of the semiconductor light emitting device is a DFB (distributed feedback type) structure, a simple buried structure or a DBR (distributed Bragg reflection type) structure may be used, or a structure for efficiently coupling output light to an optical fiber. A structure to which a spot size conversion structure is added may be used. Further, although the case where the light from the semiconductor light emitting element is coupled to the optical fiber has been described, it may be coupled to a waveguide such as a quartz-based planar optical circuit.

Although titanium and platinum are used as the metal for the heater, metals such as chromium, tungsten, nichrome, nickel, copper, palladium, molybdenum, aluminum, gold, titanium alone, and platinum alone may be used. In the above-described first embodiment, a fiber array whose end face is polished so as to be inclined by 5 degrees is used. However, the inclination angle may be increased to reduce the influence of reflection, or the influence of reflection may be a problem. If not, it does not need to be inclined. Further, although aluminum nitride is used as the semiconductor light emitting element mounting substrate, an insulator such as ceramic such as alumina, glass, or the like, or a metal may be used.

In the above-described second embodiment, since an assembly method using passive alignment is adopted, a low-cost module can be manufactured. It has the characteristic that the influence of can be eliminated.

[0036]

As described above, according to the present invention, since a substrate having a plurality of semiconductor light-emitting elements mounted thereon and having a built-in heater is mounted on the Peltier element, all the semiconductor light-emitting elements are controlled by the temperature control by the Peltier element. And the oscillation wavelength of each semiconductor light emitting element can be individually controlled by the individually arranged built-in heaters. Further, in the present invention, since grooves are formed between the semiconductor light emitting elements on the substrate, heat crosstalk when the built-in heater is driven is suppressed, and the oscillation wavelength of each semiconductor light emitting element can be independently controlled, so that it is easy to use. It has the effect of becoming.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a configuration of a multi-wavelength light source using an optical element mounting board according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view showing one configuration of the semiconductor light emitting device in FIG.

FIG. 3 is a sectional view taken along line AA ′ in FIG. 2, and is a bottom view of the semiconductor light emitting device.

FIG. 4 is a cross-sectional view taken along line BB ′ in FIG. 1, and is a top view of the optical element mounting substrate.

FIG. 5 is a flowchart showing a method for manufacturing the semiconductor light emitting device in FIG.

FIG. 6 is a flowchart showing a method of manufacturing the optical element mounting substrate in FIG.

FIG. 7 is a conceptual diagram illustrating an arrangement of a metal for a heater on an optical element mounting substrate constituting the multi-wavelength light source according to the first embodiment of the present invention.

FIG. 8 is a flowchart showing a procedure for mounting a semiconductor light emitting element on a substrate in FIG.

FIG. 9 is a diagram illustrating a configuration of a multi-wavelength light source module according to the first embodiment of the present invention.

FIG. 10 is a cross-sectional view illustrating a configuration of a multi-wavelength light source using an optical element mounting board according to a second embodiment of the present invention.

FIG. 11 is a bird's-eye view showing a configuration of a multi-wavelength light source according to a second embodiment of the present invention.

FIG. 12 is a flowchart illustrating a method of manufacturing the optical element mounting substrate in FIGS. 10 and 11;

FIG. 13 is a flowchart showing a procedure for mounting a semiconductor light emitting element on a substrate in FIG.

[Explanation of symbols]

Reference Signs List 1 InP substrate 2 InGaASP light confinement layer 3 Multiple quantum well active layer 4 InGaASP light confinement layer 5 p-type InP cladding layer 6 p-type InGaASP contact layer 7 p-InP layer 8 n-InP layer 9 p-side ohmic electrode 10 n-side ohmic Electrode 11 Antireflection film 12 High reflection film 13 Solder 14 Mounting substrate 15, 17 SiO ₂ film 16 Metal for heater 18 Alignment mark on semiconductor light emitting element 19 Cr / Au electrode 20 Alignment mark on mounting substrate 21 Wiring electrode for heater 22 Separation groove Reference Signs List 23 fiber array 24 semiconductor light emitting element 25 mounting substrate 26 silicon substrate 27 fiber fixing V groove 28 separating V groove 29 SiO ₂ 30 rectangular groove 31 Peltier element 100 semiconductor light emitting element 200 semiconductor light emitting element mounting substrate

Continued on the front page (72) Inventor Noboru Ishihara 2-3-1 Otemachi, Chiyoda-ku, Tokyo F-term (reference) in Nippon Telegraph and Telephone Corporation 5F041 AA11 AA12 CA34 CB29 CB36 DA19 DA34 DA35 DA82 DA83

Claims (4)

[Claims] 1. An optical element mounting board having a plurality of semiconductor light emitting elements mounted thereon and having a heating element group provided corresponding to each of the semiconductor light emitting elements and applying different heats to the corresponding light emitting elements, An optical element mounting substrate, comprising: a groove provided between installation positions of a plurality of semiconductor light emitting elements for isolating heat applied to each of the plurality of semiconductor light emitting elements. 2. The optical element mounting board according to claim 1, wherein each heating element of the heating element group is provided below the installation position. 3. The optical element mounting board according to claim 1, wherein the heating element is a heater that generates heat in accordance with an applied current. 4. A multi-wavelength light source, comprising: the optical element mounting substrate according to claim 1; and a plurality of semiconductor light emitting elements provided at each of the installation positions.