CN103094832A - Manufacture method for monolithic integration titanium film thermal resistor tunable distributed feed back (DFB) laser - Google Patents
Manufacture method for monolithic integration titanium film thermal resistor tunable distributed feed back (DFB) laser Download PDFInfo
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Abstract
The invention discloses a manufacture method for a monolithic integration titanium film thermal resistor tunable distributed feed back (DFB) laser. The manufacture method comprises the steps of selecting an indium phosphide substrate 1, sequentially and epitaxially growing a buffer layer 2 and a multiple quantum wells active area 3 on the substrate 1, manufacturing even gratings 4 on the surface layer of the multiple quantum wells active area 3 by adopting holographic exposure etching, growing a cladding 5 and an electric contact layer 6 on the even gratings 4, adopting a regular photoetching and etching process, manufacturing a ridge waveguide structure 7 on the electric contact layer 6, growing a passivation layer 8 on the manufactured ridge waveguide structure 7, sputtering titanium and gold metal film on the passivation layer 8 after a front face electrode window is opened by adopting regular photoetching, coating photoresist on the metal film, photoetching a front face electrode pattern 9, a film resistor pressure welding electrode pattern 10 and a film resistor area 11 for once, photoetching and selectively etching for twice to form a titanium film thermal resistor strip 11, manufacturing a back face electrode 12 on the back face of the substrate 1 after the indium phosphide substrate 1 is thinned, and achieving manufacturing of a tube core.
Description
Technical field
The present invention relates to field of optoelectronic devices, particularly the manufacture method of the tunable Distributed Feedback Laser of a kind of monolithic integrated titanium film thermal resistance.
Background technology
In the Modern High-Speed optical communication system, Wavelength tunable laser is the Primary Component of optical communication network and system.Its market prospects that are widely used at present, fields such as atmospheric monitoring, measurement, sensing.It is the critical component in high-speed high capacity optical communication system, wavelength division multiplexing, time division multiplex system in addition, not only can be used as the DWDM light source, also can be used as the important light source of the systems such as the packet switching network, Access Network and quick wavelength conversion.
Semiconductor distributed feed-back (DFB) laser has good dynamic single longitudinal mode characteristic, and manufacture craft is ripe, and device performance is stable, and reliability is high, is the topmost light source of present optical fiber telecommunications system.The output wavelength of Distributed Feedback Laser determines by grating cycle and effective refractive index, and the wavelength tuning mode mainly comprises the tuning and thermal tuning of Injection Current.Thermal tuning is in wide wavelength tuning process than the great advantage of electric current tuning, the live width expansion can not occur, and the rising of temperature causes semi-conducting material refractive index and band gap variation, thereby causes laser output wavelength to change.
Thermal tuning the earliest is to realize the tuning of wavelength by the heat sink temperature that changes in chip of laser, and such technology is simple, but owing to being heat transfer process mode indirectly, wavelength tuning efficient is low on the one hand, and tuned speed is slower on the other hand.Along with the development of correlation technique, made the mode of monolithic integrated thin-film resistance in Distributed Feedback Laser ridge waveguide one side and grew up gradually in recent years.The technology of this integrated thin-film resistance near the Multiple Quantum Well active area, makes thermal tuning efficient greatly improve due to it.So far, existing a plurality of research groups have made the tunable wave length Distributed Feedback Laser by the mode of integrated thin-film resistance, IEEE PHOTONICS TECHNOLOGY LETTERS1992Vol.4 for example, 321-323 and ELECTRONICS LETTERS 2003Vol.39No.25 etc.Nearly all researcher adopts platinum to make film resistor, but does not make film resistor bar figure because platinum has corresponding corrosive liquid, and the technology such as needs employing Lift-offs (Lift-off) realize.And in conjunction with P electrode (titanium platinum) graphic making of laser, it needs at twice metal sputtering and two step Lift-off technology to make, the technique relative complex.
Summary of the invention
As mentioned above, present tunable laser, its thermal resistance bar all adopts the metals such as platinum Pt to make, and platinum Pt is difficult for etching, needs Lift-off, needs like this twice evaporation metal, complete the making of whole tunable laser, and its resistance is less, needs very high tuning current, is unfavorable for practical application.For addressing the above problem the manufacture method that the invention discloses the tunable Distributed Feedback Laser of a kind of monolithic integrated titanium film thermal resistance.Device disclosed by the invention can be simplified device making technics, reduce cost of manufacture than the mode of integrated platinum film resistor.
The invention provides the manufacture method of the tunable Distributed Feedback Laser of a kind of monolithic integrated titanium film thermal resistance, it comprises following making step:
Step 1: epitaxial growth buffer, Multiple Quantum Well active area successively on substrate;
Step 2: adopt the holographic exposure etching to make uniform grating on the top layer of Multiple Quantum Well active area;
Step 3: growth covering and electric contacting layer on uniform grating;
Step 4: etching ridge waveguide structure on electric contacting layer;
Step 5: growth of passivation layer on described ridge waveguide structure;
Step 6: sputtered titanium, golden metallic film successively on passivation layer;
Step 7: by described titanium of etching, golden metallic film, and form front electrode figure and the film resistor pressure welding electrode pattern that is consisted of by titanium and metal;
Step 8: by secondarily etched described titanium, golden metallic film, and the titanium film thermal resistance bar that is consisted of by titanium;
Step 9: will make backplate, the die making that completes described tunable Distributed Feedback Laser at its back side after described substrate thinning.
Wherein InP substrate 1 is N-type or P type, and doping content is 5 * 10
17-5 * 10
18cm
-3, crystal face is (100).
Wherein Multiple Quantum Well active area 3 comprises lower waveguide layer 31, sandwich layer 32 and the upper ducting layer 33 of growth successively.
Wherein the material of the sandwich layer 32 in Multiple Quantum Well active area 3 is InGaAsP, and thickness is the 70-120 nanometer.
The cycle of the uniform grating 4 of wherein making is determined according to the emission wavelength of device.
Wherein said etching is made ridge waveguide structure 7, and its etching depth is to the surface of covering 5, and its structure is single ridged waveguides, and the ridge waveguide width is 2-4um.
Wherein said passivation layer 8 is for adopting silicon dioxide or the silicon nitride film of PECVD growth, and thickness is 350-400nm.
Wherein said titanium, golden metallic film, its thickness is respectively 150-300nm and 400-500nm.
Wherein said front electrode figure 9 and film resistor pressure welding electrode pattern are rectangular graph, its long and wide being of a size of between 50-100um.
Wherein said titanium film resistor bar 11 length are 300-350um, and width is 5-20um, are 20-30um apart from the distance at ridge waveguide structure 7 centers.
The said method that the present invention proposes adopts titanium to make film resistor, the technology that adopts titanium to make the P electrode, only need a metal sputtering (titanium film) and common photoetching process can produce simultaneously the P electrode of laser and integrated titanium film resistor (comprising the pressure welding electrode), and the resistivity of Ti is far above Pt, and its electric current tuning efficient is far above the device of other integrated thermal resistance bars like this.The integrated titanium film of monolithic disclosed by the invention is made the method for thermal tuning Distributed Feedback Laser and has been simplified manufacture craft, has reduced cost of manufacture.By size and the position of appropriate design titanium film resistor, can obtain required wavelength tuning efficient and scope.
Description of drawings
Fig. 1 is the structural representation of the tunable Distributed Feedback Laser of monolithic integrated titanium film thermal resistance in the present invention;
Fig. 2 is the vertical view of the tunable Distributed Feedback Laser structure of the integrated titanium film thermal of monolithic resistance in the present invention;
Fig. 3 is the manufacture method flow chart of the tunable Distributed Feedback Laser of monolithic integrated titanium film thermal resistance in the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.Fig. 1 shows the structural representation of the tunable Distributed Feedback Laser of monolithic integrated titanium film thermal resistance in the present invention, and Fig. 2 shows the vertical view of the tunable Distributed Feedback Laser of monolithic integrated titanium film thermal resistance in the present invention.Shown in seeing figures.1.and.2, the invention provides the manufacture method of the tunable Distributed Feedback Laser of a kind of monolithic integrated titanium film thermal resistance.Tube core is the core of laser, and it is through the rear laser device that forms of encapsulation (adding the ancillary equipment such as drive circuit, TEC).Therefore usually said laser fabrication is the making of vial core.
The manufacture method of the tunable Distributed Feedback Laser of monolithic disclosed by the invention integrated titanium film thermal resistance comprises the steps:
Step 1: select an InP substrate 1, wherein InP substrate 1 is N-type or P type, and its doping content is 5 * 10
17～5 * 10
18cm
-3
Step 2: epitaxial growth buffer 2, Multiple Quantum Well active area 3 successively on InP substrate 1, described Multiple Quantum Well active area 3 comprises lower waveguide layer 31, sandwich layer 32 and the upper ducting layer 33 of growth successively, the material of the sandwich layer 32 in this Multiple Quantum Well active area 3 is InGaAsP, and thickness is the 70-120 nanometer.
Step 3: namely go up on the top layer of Multiple Quantum Well active area 3 and adopt the holographic exposure etching to make uniform grating 4 on ducting layer 33, it is the periodicity groove that cutting forms on upper ducting layer 33, and the cycle of described grating 4 is determined according to the emission wavelength of device.
Step 4: growth covering 5 and electric contacting layer 6 on uniform grating 4, described covering is the cap rock of described grating 4, its groove with described grating 4 fills up, then the described electric contacting layer 6 of extension on described covering.
Step 5: adopt conventional photoetching, etching technics, produce ridge waveguide structure 7 on electric contacting layer 6, its corrosion depth is to the surface of covering 5, and its structure is single ridged waveguides, and the ridge waveguide width is 2-4um.
Step 6: growth one deck passivation layer 8 on the ridge waveguide structure 7 of making, described passivation layer is for adopting silicon dioxide or the silicon nitride film of PECVD growth, and thickness is 350-400nm.Wherein, accompanying drawing 1 is the device design sketch of completing after making because etching ridge waveguide structure, so electric contacting layer has only stayed the part of Reference numeral 6 indications, after the electric contacting layer of its both sides is etched away, regrowth passivation layer 8.
Step 7: after adopting conventional photoetching to leave the front electrode window, adopt magnetron sputtering or electron beam evaporation sputtered titanium, golden metallic film successively on passivation layer 8, described titanium, golden metallic film, its thickness is respectively 150-300nm and 400-500nm.
Step 8: after the described titanium of part, golden metallic film are fallen in photoetching, a selective etching, stay the die front side electrode pattern 9 and the film resistor pressure welding electrode pattern 10 that are consisted of by titanium and metal on passivation layer 8, die front side electrode pattern 9 and film resistor pressure welding electrode pattern are rectangular graph, its long and wide being of a size of between 50-100um.
Step 9: after metal on the film resistor bar is fallen in secondary photoetching, selective etching, stay the titanium film thermal resistance bar 11 that is consisted of by titanium on passivation layer 8, wherein said titanium film resistor bar 11 is elongate in shape, length is 300-350um, width is 5-20um, itself and described ridge waveguide structure 7 be arranged in parallel, and the distance of the adjacent boundary of described titanium film resistor bar 11 and ridge waveguide structure 7 is 15-25um.
Step 10: make in the mode sputter of substrate 1 back side employing magnetron sputtering or thermal evaporation the backplate 12 that is consisted of by the gold germanium nickel metal alloy after InP substrate 1 attenuate, complete die making, complete whole laser fabrication after employing standard die package.
Embodiment one
In a preferred embodiment of the invention, the manufacture method of the tunable Distributed Feedback Laser of described N-type substrate monolithic integrated titanium film thermal resistance comprises the steps:
Select a n type inp substrate 1, its doping content is 5 * 10
17cm
-3, crystal face is (100); Epitaxial growth buffer 2, Multiple Quantum Well active area 3 and electric contacting layer 4 successively on n type inp substrate 1, described Multiple Quantum Well active area 3 comprise lower waveguide layer 31, sandwich layer 32 and the upper ducting layer 33 of growth successively; The material selection InGaAsP of the sandwich layer 32 in this Multiple Quantum Well active area 3, thickness are 70 nanometers.
Top layer at Multiple Quantum Well active area 3 makes uniform grating 4; Growth covering 5 and electric contacting layer 6 on uniform grating 4; Adopt conventional photoetching, etching technics, produce ridge waveguide structure 7 on electric contacting layer 6, its structure is single ridged waveguides, and the ridge waveguide width is 2um; The thickness that growth one deck adopts PECVD to grow on the ridge waveguide structure 7 of making is the passivation layer 8 of the silica membrane of 350nm;
After adopting autoregistration to leave the P electrode window through ray, sputter thickness is respectively the titanium of 150nm and 400nm, golden metallic film on passivation layer 8; A photoetching, corrode form P electrode pattern 9 and film resistor pressure welding electrode pattern 10 after described titanium, golden metallic film on passivation layer 8; The length of P electrode pattern 9 and wide 50um and the 50um of being respectively; The length of film resistor pressure welding electrode pattern 10 and wide 50um and the 50um of being respectively;
Secondary photoetching, selective etching form titanium film thermal resistance bar 11 on passivation layer 8, its length is 300um, and width is 5um; Described titanium film thermal resistance bar 11 is 15um with the distance of the adjacent boundary of ridge waveguide structure 7; Make N face electrode 12 in the bottom of whole tube core after substrate thinning, complete die making.
Embodiment two
In another preferred embodiment of the present invention, the manufacture method of the tunable Distributed Feedback Laser of described N-type substrate monolithic integrated titanium film thermal resistance comprises the steps:
Select a n type inp substrate 1, its doping content is 5 * 10
18cm
-3, crystal face is (100); Epitaxial growth buffer 2, Multiple Quantum Well active area 3 and electric contacting layer 4 successively on n type inp substrate 1, described Multiple Quantum Well active area 3 comprise lower waveguide layer 31, sandwich layer 32 and the upper ducting layer 33 of growth successively; The material selection InGaAsP of the sandwich layer 32 in this Multiple Quantum Well active area 3, thickness are 120 nanometers.
Top layer at Multiple Quantum Well active area 3 makes uniform grating 4; Growth covering 5 and electric contacting layer 6 on uniform grating 4; Adopt conventional photoetching, etching technics, produce ridge waveguide structure 7 on electric contacting layer 6, its structure is single ridged waveguides, and the ridge waveguide width is 4um; The thickness that growth one deck adopts PECVD to grow on the ridge waveguide structure 7 of making is the passivation layer 8 of the silica membrane of 400nm;
After adopting autoregistration to leave the P electrode window through ray, sputter thickness is respectively the titanium of 300nm and 500nm, golden metallic film on passivation layer 8; A photoetching, corrode form P electrode pattern 9 and film resistor pressure welding electrode pattern 10 after described titanium, golden metallic film on passivation layer 8; The length of P electrode pattern 9 and wide 100um and the 100um of being respectively; The length of film resistor pressure welding electrode pattern 10 and wide 100um and the 100um of being respectively;
Secondary photoetching, selective etching form titanium film thermal resistance bar 11 on passivation layer 8, its length is 350um, and width is 20um, and described titanium film thermal resistance bar 11 is 25um with the distance of the adjacent boundary of ridge waveguide structure 7; Make N face electrode 12 in the bottom of whole tube core after substrate thinning, complete die making.
Embodiment three
In another preferred embodiment of the present invention, the manufacture method of the tunable Distributed Feedback Laser of described N-type substrate monolithic integrated titanium film thermal resistance comprises the steps:
Select a n type inp substrate 1, its doping content is 2 * 10
18cm
-3, crystal face is (100); Epitaxial growth buffer 2, Multiple Quantum Well active area 3 and electric contacting layer 4 successively on n type inp substrate 1, described Multiple Quantum Well active area 3 comprise lower waveguide layer 31, sandwich layer 32 and the upper ducting layer 33 of growth successively; The material selection InGaAsP of the sandwich layer 32 in this Multiple Quantum Well active area 3, thickness are 100 nanometers.
Top layer at Multiple Quantum Well active area 3 makes uniform grating 4; Growth covering 5 and electric contacting layer 6 on uniform grating 4; Adopt conventional photoetching, etching technics, produce ridge waveguide structure 7 on electric contacting layer 6, its structure is single ridged waveguides, and the ridge waveguide width is 3um; The thickness that growth one deck adopts PECVD to grow on the ridge waveguide structure 7 of making is the passivation layer 8 of the silica membrane of 380nm;
After adopting autoregistration to leave the P electrode window through ray, sputter thickness is respectively the titanium of 200nm and 450nm, golden metallic film on passivation layer 8; A photoetching, corrode form P electrode pattern 9 and film resistor pressure welding electrode pattern 10 after described titanium, golden metallic film on passivation layer 8; The length of P electrode pattern 9 and wide 80um and the 60um of being respectively; The length of film resistor pressure welding electrode pattern 10 and wide 70um and the 60um of being respectively;
Secondary photoetching, selective etching form titanium film thermal resistance bar 11 on passivation layer 8, its length is 320um, and width is 10um; Described titanium film thermal resistance bar 11 is 20um with the distance of the adjacent boundary of ridge waveguide structure 7; Make N face electrode 12 in the bottom of whole tube core after substrate thinning, complete die making.
In sum, the tunable Distributed Feedback Laser of the integrated titanium film thermal of monolithic resistance that designs of the present invention is made can be simplified device making technics, reduces the device cost of manufacture.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. the manufacture method of the tunable Distributed Feedback Laser of monolithic integrated titanium film thermal resistance, comprise the steps:
Step 1: epitaxial growth buffer, Multiple Quantum Well active area successively on substrate;
Step 2: adopt the holographic exposure etching to make uniform grating on the top layer of Multiple Quantum Well active area;
Step 3: growth covering and electric contacting layer on uniform grating;
Step 4: etching ridge waveguide structure on electric contacting layer;
Step 5: growth of passivation layer on described ridge waveguide structure;
Step 6: sputtered titanium, golden metallic film successively on passivation layer;
Step 7: by described titanium of etching, golden metallic film, and form front electrode figure and the film resistor pressure welding electrode pattern that is consisted of by titanium and metal;
Step 8: by secondarily etched described titanium, golden metallic film, and the titanium film thermal resistance bar that is consisted of by titanium;
Step 9: will make backplate, the die making that completes described tunable Distributed Feedback Laser at its back side after described substrate thinning.
2. the manufacture method of the tunable Distributed Feedback Laser of monolithic as claimed in claim 1 integrated titanium film thermal resistance, is characterized in that, described substrate is N-type or p type inp substrate, and doping content is 5 * 10
17～5 * 10
18cm
-3
3. the manufacture method of the tunable Distributed Feedback Laser of monolithic as claimed in claim 1 integrated titanium film thermal resistance, is characterized in that, the Multiple Quantum Well active area comprises lower waveguide layer, sandwich layer and the upper ducting layer of growth successively.
4. the manufacture method of the tunable Distributed Feedback Laser of monolithic as claimed in claim 3 integrated titanium film thermal resistance, is characterized in that, the material of described sandwich layer is InGaAsP, and thickness is the 70-120 nanometer.
5. the manufacture method of the tunable Distributed Feedback Laser of monolithic as claimed in claim 1 integrated titanium film thermal resistance, is characterized in that, the cycle of described uniform grating is determined according to the emission wavelength of described laser.
6. the manufacture method of the tunable Distributed Feedback Laser of monolithic as claimed in claim 1 integrated titanium film thermal resistance, is characterized in that, when etching was made ridge waveguide structure, its etching depth was to the surface of covering 5, and its structure is single ridged waveguides, and the ridge waveguide width is 2-4um.
7. the manufacture method of the tunable Distributed Feedback Laser of monolithic as claimed in claim 1 integrated titanium film thermal resistance, is characterized in that, described passivation layer 8 is for adopting silicon dioxide or the silicon nitride film of PECVD growth, and thickness is 350-400nm.
8. the manufacture method of the tunable Distributed Feedback Laser of monolithic as claimed in claim 1 integrated titanium film thermal resistance, is characterized in that, described titanium, golden metallic film, and its thickness is respectively 150-300nm and 400-500nm.
9. the manufacture method of the tunable Distributed Feedback Laser of monolithic as claimed in claim 1 integrated titanium film thermal resistance, it is characterized in that, described front electrode figure and film resistor pressure welding electrode pattern are rectangular graph, and their length and wide size are respectively between 50-100um.
10. the manufacture method of the tunable Distributed Feedback Laser of monolithic as claimed in claim 1 integrated titanium film thermal resistance, it is characterized in that, described titanium film resistor bar is elongate in shape, its length is 300-350um, width is 5-20um, itself and described ridge waveguide structure be arranged in parallel, and the distance of the adjacent boundary of described titanium film resistor bar and ridge waveguide structure is 15-25um.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107112721A (en) * | 2015-01-23 | 2017-08-29 | 阿尔卡特朗讯 | Self-heating in acoustics is tunable distributed feedback laser is alleviated |
| CN107508128A (en) * | 2017-08-25 | 2017-12-22 | 武汉电信器件有限公司 | A kind of thermal tuning TWDM PON lasers and its manufacture method |
| CN111370993A (en) * | 2020-04-15 | 2020-07-03 | 广东鸿芯科技有限公司 | Semiconductor laser device with constant temperature control function and manufacturing method thereof |
| CN112713504A (en) * | 2021-01-11 | 2021-04-27 | 宁波元芯光电子科技有限公司 | Thermally tuned DFB laser |
| CN116417898A (en) * | 2023-06-09 | 2023-07-11 | 深圳市星汉激光科技股份有限公司 | FP laser chip integrating Peltier refrigeration and preparation method thereof |
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| US7476558B2 (en) * | 2004-09-16 | 2009-01-13 | Institute Of Semiconductors, Chinese Academy Of Sciences | Method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107112721A (en) * | 2015-01-23 | 2017-08-29 | 阿尔卡特朗讯 | Self-heating in acoustics is tunable distributed feedback laser is alleviated |
| CN107508128A (en) * | 2017-08-25 | 2017-12-22 | 武汉电信器件有限公司 | A kind of thermal tuning TWDM PON lasers and its manufacture method |
| CN107508128B (en) * | 2017-08-25 | 2020-05-12 | 武汉电信器件有限公司 | Thermally tuned TWDM-PON laser and manufacturing method thereof |
| CN111370993A (en) * | 2020-04-15 | 2020-07-03 | 广东鸿芯科技有限公司 | Semiconductor laser device with constant temperature control function and manufacturing method thereof |
| CN112713504A (en) * | 2021-01-11 | 2021-04-27 | 宁波元芯光电子科技有限公司 | Thermally tuned DFB laser |
| CN116417898A (en) * | 2023-06-09 | 2023-07-11 | 深圳市星汉激光科技股份有限公司 | FP laser chip integrating Peltier refrigeration and preparation method thereof |
| CN116417898B (en) * | 2023-06-09 | 2023-08-15 | 深圳市星汉激光科技股份有限公司 | FP laser chip integrating Peltier refrigeration and preparation method thereof |
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