CN106784213A - A kind of ring cavity nano wire electrical pumping single-photon source device - Google Patents
A kind of ring cavity nano wire electrical pumping single-photon source device Download PDFInfo
- Publication number
- CN106784213A CN106784213A CN201710028757.5A CN201710028757A CN106784213A CN 106784213 A CN106784213 A CN 106784213A CN 201710028757 A CN201710028757 A CN 201710028757A CN 106784213 A CN106784213 A CN 106784213A
- Authority
- CN
- China
- Prior art keywords
- ring cavity
- nano wire
- photon source
- pin
- source device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a kind of ring cavity nano wire electrical pumping single-photon source device, it is characterised in that：Including p-type electrode, pin nano wires, the quantum dot being embedded into nano wire, multilayer concentric ring cavity, n-type electrode, n-type material and substrate.The advantage of this device is：While realizing that electrical pumping works, the annular Bragg microcavity constituted using multilayer concentric annulus, in the center of circle, quantum dot sites produce the enhancing of electromagnetic field local, Purcell effect can be utilized strengthens the radiation efficiency of quantum dot single-photon source, the diverging of photon can be limited in the two spaces dimension perpendicular to nano wire again, make single photon only along the outgoing of nano wire direction, it is easy to and fiber coupling, it is greatly enhanced light Collection utilization efficiency.Ring cavity nano wire electrical pumping single-photon source device of the invention can be widely applied to quantum information, quantum calculation, quantum authentication, quantum accurate measurement association area.
Description
Technical field
The present invention relates to single-photon source, semiconductor micro-nano photonic device, quantum information field, specifically refer to a kind of ring cavity and receive
Rice noodles electrical pumping single-photon source device.
Technical background
Single-photon source is not only quantum information treatment, quantum cryptography, the linear optical computing of quantum and quantum cryptology
Important component, microabsorption measurement, ultra-high sensitive magnetic-field measurement, biological fluorescent labelling with imaging etc. field also have weight
Want application value.In the generation scheme of numerous single photon emissions, the single-photon source based on quantum dot compares other single-photon sources
Suffer from very big superiority in every respect, such as have breadth of spectrum line is narrow, oscillator strength is high, photofading will not occur or flicker,
Time jitter is small, repetition rate is high, emission band can cover each wave band from ultraviolet to infrared, be suitable to electric pump etc..Generally,
Quantum dot emission single photon is all do not have directive, and its spontaneous radiation efficiency in free space is low, causes to be difficult
It is real practical.
In order to improve the emission effciency of single-photon source, high-quality single-photon source is obtained, quantum dot can be placed in microcavity,
Can be by greatly compared with the spontaneous radiation in free space using the spontaneous radiation of atom in purcell effects, i.e. microcavity
Strengthen, so as to the quantum efficiency of single photon emission can be improved using microcavity.For electric pump device, the presence of microcavity can
To greatly reduce the operating voltage of electrical pumping, so as to improve the stability of device.It is typically with photon crystal micro cavity or DBR
Microcavity obtains high-quality single-photon source.However, photon crystal micro cavity is not good with electrical pumping device architecture compatibility, and to short
Its physical dimension of ripple wave band is small, it is very big to prepare；DBR microcavitys then can only be in one dimension limitation light of vertical direction, Er Qieqi
It is required that quantum dot emission wavelength is accurately aligned with DBR chambers resonant wavelength, cause to be suitable to the high-quality DBR microcavitys of electric pump to extension
Equipment requirement is high, it is big to prepare difficulty.
The content of the invention
It is an object of the invention to overcome above-mentioned deficiency of the prior art, there is provided a kind of suitable electrical pumping, preparation are simple
And the ring cavity nano wire electrical pumping single-photon source device of light can be limited in two dimensions.
To achieve the above object, the present invention is as follows using technical scheme：
A kind of ring cavity nano wire electrical pumping single-photon source device, from top to bottom includes successively：P-type electrode, pin nano wires, quantum
Point, multilayer concentric ring cavity, n-type electrode, lower floor's n-type material and substrate；Wherein：
The substrate is located at the bottom, is lower floor's n-type material above substrate, be pin nano wires above lower floor's n-type material,
Quantum dot, multilayer concentric ring cavity, n-type electrode, p-type electrode are located above pin nano wires；
The multilayer concentric ring cavity is located at the outer layer of pin nano wires with pin nano wires as the center of circle；
The n-type electrode is that the center of circle is located at the outer layer of multilayer concentric ring cavity in a ring with pin nano wires, and is close to lower floor's N-shaped material
Material（6）Edge；
The pin nano wires are located on the center of lower floor's n-type material, and quantum dot embedding is in pin nano wires（2）It is middle.
The material of the p-type electrode is included but is not limited to one or more in Graphene, ITO, AZO, Au, Ti, Ni, Pt
Mixing.For using the material transparent to emergent light from the device of the upward light extraction of substrate face, for going out downwards from substrate back
The device of light is using the material to emergent light high reflection.
The pin nano wires are the pin structures being made up of p-type material, Intrinsical, three layers of n-type material.Wherein, p-type layer material
Material position forms Ohmic contact in the superiors with p-type electrode.
The quantum dot is located in the intrinsic layer of pin nano wires, is material of the energy gap less than pin nano wires, with pin
Nano wire constitutes single quantum together.
The multilayer concentric ring cavity is made up of with pin nano wires as the center of circle the different material of two or more complex refractivity indexes,
Its material includes but is not limited to air, dielectric insulation materials, metal material.The multilayer concentric ring cavity is multilayer concentric annulus structure
Into annular Bragg microcavity, the enhancing of electromagnetic field local, Ji Nengli can be produced in home position, i.e. pin nanometer of line position
Strengthen the radiation efficiency of quantum dot single-photon source with Purcell effect, can be limited in the two spaces dimension perpendicular to nano wire again
The diverging of photon processed, makes single photon along the outgoing of nano wire direction, greatly improves light Collection utilization efficiency.
The n-type electrode and lower floor n-type material form N-shaped Ohmic contact, the material of n-type electrode is Graphene, ITO,
Any one or more mixing in AZO, Au, Ti, Ni, Pt；
Lower floor's n-type material is consistent with the material of the n-type material in pin nano wires.
The substrate from the device of the downward light extraction of substrate back for using the material transparent to emergent light.
Ring cavity nano wire electrical pumping single-photon source device proposed by the present invention can be used as from the upward outgoing of substrate face
Single-photon source device, and can be used as the single-photon source device from the downward outgoing of substrate back.As normal emergence single-photon source device
During part, p-type electrode uses the material transparent to emergent light, such as Graphene, ITO, AZO；As back of the body outgoing single-photon source device
When, at this moment p-type electrode can limit photon only along nanometer using the material to emergent light high reflection, such as metal Au, Pt, Ti/Au
One end outgoing of line N-shaped, further improves the directionality of single-photon source.
Beneficial effects of the present invention are as follows：
1st, while realizing that electrical pumping works, Purcell effect can be utilized to strengthen the radiation efficiency of quantum dot single-photon source,
The diverging of photon can be limited in the two spaces dimension perpendicular to nano wire again, makes single photon only along the outgoing of nano wire direction, easily
In integrated with fiber coupling, light Collection utilization efficiency is greatly enhanced；
2nd, can be used as the single-photon source device from the upward outgoing of substrate face, but energy is used as the list from the downward outgoing of substrate back
Photon source device, and photon can be limited only along the outgoing of nano wire one end during as back of the body outgoing single-photon source device, further
Improve the directionality of single-photon source.
Brief description of the drawings
Fig. 1 is three dimensional structure diagram of the invention.
Fig. 2 is structural representation of the structure shown in Fig. 1 along circle ring center section.
Fig. 3 is the AlGaN/GaN ring cavity nano wire electrical pumping single-photon source devices based on Graphene transparent p-type electrode
Purcell enhancer calculated values.
Wherein, reference is：1 is p-type electrode；2 is pin nano wires；3 is quantum dot；4 is multilayer concentric ring cavity；5 are
N-type electrode；6 is lower floor's n-type material；7 is substrate.
Specific embodiment
Embodiment 1
A kind of AlGaN/GaN ring cavity nano wire electrical pumping single-photon source devices based on Graphene transparent p-type electrode.Such as Fig. 1,2 institutes
Show, wherein：1 is Graphene transparent p-type electrode；2 is p-AlGaN/i-AlGaN/GaN-Qdot/i-AlGaN/n-AlGaN nanometers
Line；3 is to be embedded into the GaN quantum dots in pin AlGaN nano wires；4 is AlGaN and spin on glass（SOG）What is constituted is more
The concentric ring cavity of layer, the thickness of concentric ring cavity is a quarter of effective wavelength；5 is the n-type electrode that Pt/Au is constituted；6 is N-shaped
AlGaN epitaxial materials；7 is AlN substrates.The Bragg grating limitation vertical nano-wire that this structure is made up of multilayer concentric ring cavity
The photon of two spaces dimension diverging, launches single photon, with good directionality, and concentric ring only along nano wire two ends
Localized modes photon density increase in microcavity greatly increases the speed that quantum dot radiates single photon.Fig. 3 is directed to launch wavelength
The Purcell enhancers that the AlGaN/GaN quantum dots of 325nm/nano wire single-photon source device is calculated, have reached 80 times.
The device preparation method is as follows：
First in single quantum of AlN Grown p-AlGaN/i-AlGaN/GaN-Qdot/i-AlGaN/n-AlGaN sandwich constructions
Trap epitaxial wafer；Then the nano graph of annular concentric and center circle is produced thereon by beamwriter lithography or nano impression；Its
Afterwards ring cavity nano thread structure is produced using dry etching combination wet etching；Spin on glass is utilized afterwards（SOG）By ring cavity
Space filling, and in nano wire apical growth Graphene transparent p-type electrode；It is last to etch circular table in ring cavity structure peripheral
And deposit Pt/Au n-type electrodes.
Embodiment 2
A kind of InGaAs/InAs ring cavity nano wire electrical pumping single-photon source devices based on Ti/Au high reflection p-type electrodes.Such as Fig. 1,2
It is shown, wherein：1 is Ti/Au high reflection p-type electrodes；2 receive for p-InGaAs/i-InGaAs/InAs/i-InGaAs/n-InGaAs
Rice noodles；3 is to be embedded into the InAs quantum dots in pin InGaAs nano wires；4 is Al2O3The multilayer concentric ring cavity constituted with air,
The thickness of concentric ring cavity is a quarter of effective wavelength；5 is the n-type electrode that Ni/Au is constituted；6 is N-shaped InGaAs extension materials
Material；7 is GaAs substrates.The Bragg grating limitation vertical nano-wire two spaces dimension that this structure is made up of multilayer concentric ring cavity
The photon for spending diverging, the photon dissipated along nano wire p-type end by the limitation of Ti/Au high reflection p-types electrode, so as to only along nano wire
The localized modes photon density increase that the super substrate back in N-shaped one end is launched downwards in single photon, and concentric ring microcavity makes quantum dot
The speed for radiating single photon is greatly increased.
The device preparation method is as follows：Circle SiO is first made on gaas substrates2Nano graph mask, then thereon
Selective area growth p-InGaAs/i-InGaAs/InAs/i-InGaAs/n-InGaAs nano thread structures；ALD deposition skill is utilized afterwards
Art is by nano wire periphery Al2O3Fill and lead up, and in apical growth Ti/Au high reflection p-type electrodes；Thereafter it is the center of circle around nano wire
Circular nano figure is produced, and ring cavity structure is produced using dry etching combination wet etching；It is last to be carved in ring cavity structure peripheral
Erosion circular table simultaneously deposits Ni/Au n-type electrodes.
The above embodiment is only preferred case of the invention, and the interest field that the present invention is advocated is not limited to these
Embodiment, any modification for not departing from the spirit and scope of the present invention, deformation should all belong to protection scope of the present invention.
Claims (8)
1. a kind of ring cavity nano wire electrical pumping single-photon source device, it is characterised in that：Including p-type electrode（1）, pin nano wires
（2）, quantum dot（3）, multilayer concentric ring cavity（4）, n-type electrode（5）, lower floor's n-type material（6）And substrate（7）；
The substrate（7）Positioned at the bottom, substrate（7）Above be lower floor's n-type material（6）, lower floor's n-type material（6）Above
It is pin nano wires（2）, quantum dot（3）, multilayer concentric ring cavity（4）, n-type electrode（5）, p-type electrode（1）Positioned at pin nano wires
（2）Above；
The multilayer concentric ring cavity（4）With pin nano wires（2）For the center of circle is located at pin nano wires（2）Outer layer；
The n-type electrode（5）With pin nano wires（2）For the center of circle is located at multilayer concentric ring cavity in a ring（4）Outer layer, and be close to
Lower floor's n-type material（6）Edge；
The pin nano wires（2）Positioned at lower floor's n-type material（6）Center on, quantum dot（3）It is embedded into pin nano wires（2）In
Between.
2. ring cavity nano wire single-photon source device according to claim 1, it is characterised in that：The p-type electrode（1）Material
One or more mixing including but not limited in Graphene, ITO, AZO, Au, Ti, Ni, Pt；For going out upwards from substrate face
The device of light uses the material transparent to emergent light, for being used to emergent light high reflection from the device of the downward light extraction of substrate back
Material.
3. ring cavity nano wire single-photon source device according to claim 1, it is characterised in that：The pin nano wires（2）By
P-type material, Intrinsical, n-type material constitute pin structures；Wherein, p-type material is located at the superiors, with p-type electrode（1）Form ohm
Contact.
4. ring cavity nano wire single-photon source device according to claim 1, it is characterised in that：The quantum dot（3）It is located at
Pin nano wires（2）Intrinsic layer in, using energy gap be less than pin nano wires（2）Material, with pin nano wires（2）Together
Constitute single quantum.
5. ring cavity nano wire single-photon source device according to claim 1, it is characterised in that：The multilayer concentric ring cavity
（4）Be made up of the different material of two or more complex refractivity indexes, the material include but is not limited to air, dielectric insulation materials,
Metal material.
6. ring cavity nano wire single-photon source device according to claim 1, it is characterised in that：The n-type electrode（5）With under
Layer n-type material（6）Form N-shaped Ohmic contact, n-type electrode（5）Material include but is not limited to Graphene, ITO, AZO, Au, Ti,
One or more mixing in Ni, Pt.
7. ring cavity nano wire single-photon source device according to claim 1, it is characterised in that：Lower floor's n-type material（6）
With pin nano wires（2）In n-type material material it is consistent.
8. ring cavity nano wire single-photon source device according to claim 1, it is characterised in that：The substrate（7）For from
The device of the downward light extraction of substrate back uses the material transparent to emergent light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710028757.5A CN106784213B (en) | 2017-01-16 | 2017-01-16 | A kind of ring cavity nano wire electrical pumping single-photon source device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710028757.5A CN106784213B (en) | 2017-01-16 | 2017-01-16 | A kind of ring cavity nano wire electrical pumping single-photon source device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106784213A true CN106784213A (en) | 2017-05-31 |
| CN106784213B CN106784213B (en) | 2019-02-22 |
Family
ID=58947032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710028757.5A Expired - Fee Related CN106784213B (en) | 2017-01-16 | 2017-01-16 | A kind of ring cavity nano wire electrical pumping single-photon source device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106784213B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107359404A (en) * | 2017-07-25 | 2017-11-17 | 中国工程物理研究院电子工程研究所 | Regulate and control the ring cavity nano-antenna of multiple random irrelevant emitter radiation |
| CN107452844A (en) * | 2017-07-21 | 2017-12-08 | 中国工程物理研究院电子工程研究所 | The high frequency quantum dot single-photon source of hyperbolic Meta Materials composite grating enhancing |
| CN108365517A (en) * | 2018-01-03 | 2018-08-03 | 中山大学 | The preparation method of dual-color single photon source structure and the structure of preparation |
| CN114866056A (en) * | 2022-04-27 | 2022-08-05 | 中国工程物理研究院电子工程研究所 | Piezoelectrically-driven zinc oxide nanowire resonator |
| WO2023215601A1 (en) * | 2022-05-05 | 2023-11-09 | The Regents Of The University Of Colorado, A Body Corporate | Quantum light source with dual optical cavities |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1632644A (en) * | 2004-12-13 | 2005-06-29 | 中国科学院上海技术物理研究所 | Three-dimensional optical microcavity type single photon source |
| CN1638218A (en) * | 2004-11-30 | 2005-07-13 | 中国科学院上海技术物理研究所 | Single quantum dot embedding optical microcavity for single photon source and its prepn |
| CN101499617A (en) * | 2008-01-30 | 2009-08-05 | 中国科学院半导体研究所 | Single proton source for implementing electrical injection by photonic crystal microcavity and wafer linking technique |
| US20100288341A1 (en) * | 2009-02-27 | 2010-11-18 | Kim Seheon | Photonic crystal cavities and related devices and methods |
| CN103346476A (en) * | 2013-06-24 | 2013-10-09 | 中国科学院长春光学精密机械与物理研究所 | Photonic crystal nano cavity quantum ring single-photon emission device and preparation method thereof |
| CN206541846U (en) * | 2017-01-16 | 2017-10-03 | 中国工程物理研究院电子工程研究所 | A kind of ring cavity nano wire electrical pumping single-photon source device |
-
2017
- 2017-01-16 CN CN201710028757.5A patent/CN106784213B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1638218A (en) * | 2004-11-30 | 2005-07-13 | 中国科学院上海技术物理研究所 | Single quantum dot embedding optical microcavity for single photon source and its prepn |
| CN1632644A (en) * | 2004-12-13 | 2005-06-29 | 中国科学院上海技术物理研究所 | Three-dimensional optical microcavity type single photon source |
| CN101499617A (en) * | 2008-01-30 | 2009-08-05 | 中国科学院半导体研究所 | Single proton source for implementing electrical injection by photonic crystal microcavity and wafer linking technique |
| US20100288341A1 (en) * | 2009-02-27 | 2010-11-18 | Kim Seheon | Photonic crystal cavities and related devices and methods |
| CN103346476A (en) * | 2013-06-24 | 2013-10-09 | 中国科学院长春光学精密机械与物理研究所 | Photonic crystal nano cavity quantum ring single-photon emission device and preparation method thereof |
| CN206541846U (en) * | 2017-01-16 | 2017-10-03 | 中国工程物理研究院电子工程研究所 | A kind of ring cavity nano wire electrical pumping single-photon source device |
Non-Patent Citations (1)
| Title |
|---|
| BHATTACHARYA,P: "Quantum Dot Photonic Crystal Light Sources", 《IEEE》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107452844A (en) * | 2017-07-21 | 2017-12-08 | 中国工程物理研究院电子工程研究所 | The high frequency quantum dot single-photon source of hyperbolic Meta Materials composite grating enhancing |
| CN107452844B (en) * | 2017-07-21 | 2023-06-30 | 中国工程物理研究院电子工程研究所 | Hyperbolic metamaterial composite grating reinforced high-frequency quantum dot single photon source |
| CN107359404A (en) * | 2017-07-25 | 2017-11-17 | 中国工程物理研究院电子工程研究所 | Regulate and control the ring cavity nano-antenna of multiple random irrelevant emitter radiation |
| CN108365517A (en) * | 2018-01-03 | 2018-08-03 | 中山大学 | The preparation method of dual-color single photon source structure and the structure of preparation |
| CN108365517B (en) * | 2018-01-03 | 2020-12-29 | 中山大学 | Preparation method of bicolor single photon source structure and prepared structure |
| CN114866056A (en) * | 2022-04-27 | 2022-08-05 | 中国工程物理研究院电子工程研究所 | Piezoelectrically-driven zinc oxide nanowire resonator |
| CN114866056B (en) * | 2022-04-27 | 2023-05-12 | 中国工程物理研究院电子工程研究所 | Piezoelectric driven zinc oxide nanowire resonator |
| WO2023215601A1 (en) * | 2022-05-05 | 2023-11-09 | The Regents Of The University Of Colorado, A Body Corporate | Quantum light source with dual optical cavities |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106784213B (en) | 2019-02-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106784213A (en) | A kind of ring cavity nano wire electrical pumping single-photon source device | |
| CN107452844B (en) | Hyperbolic metamaterial composite grating reinforced high-frequency quantum dot single photon source | |
| JP6550437B2 (en) | Method of manufacturing semiconductor microwire or nanowire, semiconductor structure comprising the microwire or nanowire, and method of manufacturing semiconductor structure | |
| Lv et al. | Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure: role of enhanced interwell carrier transport | |
| US9312448B2 (en) | Metallic contact for optoelectronic semiconductor device | |
| US8338819B2 (en) | Surface plasmon enhanced light-emitting diode | |
| Zhao et al. | GaN-based LEDs for light communication | |
| JP2010537408A (en) | Micropixel ultraviolet light emitting diode | |
| TW201034324A (en) | Light emitting and lasing semiconductor devices and methods | |
| KR101228130B1 (en) | Semiconductor light-emitting element, manufacturing method, and light-emiting device | |
| TW201222874A (en) | Opto-electronic semiconductor chip and method for its production | |
| CN105405938A (en) | Single-chip white light LED for visible light communication and preparation method therefor | |
| CN107293629A (en) | A kind of ultraviolet LED epitaxial chip inverted structure and preparation method thereof | |
| EP3869571A1 (en) | Semiconductor light-emitting element | |
| JP2011060966A (en) | Light-emitting device | |
| CN108233181A (en) | Hanging GaN film laser of integrated resonance grating microcavity and preparation method thereof | |
| CN108461581B (en) | Surface phasmon enhances volcano shape of the mouth as one speaks 3D vertical structure LED structure and preparation method | |
| CN106653967A (en) | Method for preparing single photon source through quantum well and quantum dot resonance energy transfer | |
| CN207896111U (en) | The high frequency quantum dot single-photon source of the super surface recombination grating enhancement of hyperbolic | |
| CN206541846U (en) | A kind of ring cavity nano wire electrical pumping single-photon source device | |
| KR101011108B1 (en) | Nitrides light emitting device selectively using the coupling effect between surface plasmons and active layer and method for manufacturing it | |
| Xiao et al. | In-depth investigation of deep ultraviolet MicroLED geometry for enhanced performance | |
| CN114094440B (en) | GaN base surface emitting laser based on film overturning process and preparation method | |
| Horng et al. | Effects of mesa size on current spreading and light extraction of GaN-based LEDs | |
| CN203932092U (en) | A kind of four-element LED |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190222 Termination date: 20200116 |