CN106784213B - A kind of ring cavity nano wire electrical pumping single-photon source device - Google Patents
A kind of ring cavity nano wire electrical pumping single-photon source device Download PDFInfo
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- 239000002070 nanowire Substances 0.000 title claims abstract description 66
- 238000005086 pumping Methods 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 48
- 239000002096 quantum dot Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910021389 graphene Inorganic materials 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000012774 insulation material Substances 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 4
- 230000002708 enhancing effect Effects 0.000 abstract description 4
- 238000005259 measurement Methods 0.000 abstract description 3
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 230000005672 electromagnetic field Effects 0.000 abstract description 2
- 239000000835 fiber Substances 0.000 abstract description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 14
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 5
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical group [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 235000012149 noodles Nutrition 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 238000012632 fluorescent imaging Methods 0.000 description 1
- 238000001215 fluorescent labelling Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- Engineering & Computer Science (AREA)
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
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Abstract
The invention discloses a kind of ring cavity nano wire electrical pumping single-photon source devices, it is characterised in that: including p-type electrode, pin nano wire, the quantum dot being embedded into nano wire, multilayer concentric ring cavity, n-type electrode, n-type material and substrate.The advantages of this device, is: while realizing electrical pumping work, the circular ring shape Bragg microcavity constituted using multilayer concentric annulus, in the center of circle, quantum dot sites generate the enhancing of electromagnetic field local, the radiation efficiency of Purcell effect enhancing quantum dot single-photon source can be utilized, it again can be in the diverging of the two spaces dimension limitation photon perpendicular to nano wire, it is emitted single photon only along nano wire direction, is easy to and fiber coupling, greatly improve light Collection utilization efficiency.Ring cavity nano wire electrical pumping single-photon source device of the invention can be widely applied to quantum information, quantum calculation, quantum authentication, quantum accurate measurement related fields.
Description
Technical field
The present invention relates to single-photon source, semiconductor micro-nano photonic device, quantum information field, in particular to a kind of ring cavities to receive
Rice noodles electrical pumping single-photon source device.
Technical background
Single-photon source is not only quantum information processing, quantum cryptography, the linear optical computing of quantum and quantum cryptology
Important component, the fields such as microabsorption measurement, ultra-high sensitive magnetic-field measurement, biological fluorescent labelling and imaging also have weight
Want application value.In the generation scheme of numerous single photon emissions, the single-photon source based on quantum dot compares other single-photon sources
Suffer from very big superiority in all respects, such as have breadth of spectrum line is narrow, oscillator strength is high, photofading will not occur or flashing,
Time jitter is small, repetition rate is high, emission band can cover each wave band from ultraviolet to infrared, is suitable for electric pump etc..In general,
Quantum dot emission single photon is all not have directive, and its spontaneous radiation low efficiency in free space, causes to be difficult
It is really practical.
In order to improve the emission effciency of single-photon source, quantum dot can be placed in microcavity by acquisition high-quality single-photon source,
Using purcell effect, i.e., the spontaneous radiation of atom can be by greatly compared with the spontaneous radiation in free space in microcavity
Reinforce, so that the quantum efficiency of single photon emission can be improved using microcavity.For electric pump device, the presence of microcavity can
To greatly reduce the operating voltage of electrical pumping, to improve the stability of device.Usually use photon crystal micro cavity or DBR
Microcavity obtains high-quality single-photon source.However, photon crystal micro cavity and electrical pumping device architecture compatibility are bad, and to short
Its structure size of wave wave band is small, preparation is very big；DBR microcavity then can only limit light, Er Qieqi in one dimension of vertical direction
It is required that quantum dot emission wavelength is precisely aligned with DBR chamber resonant wavelength, cause the high quality DBR microcavity suitable for electric pump to extension
Equipment requirement is high, preparation difficulty is big.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art described above, it is simple to provide a kind of suitable electrical pumping, preparation
And the ring cavity nano wire electrical pumping single-photon source device of light can be limited on two dimensions.
To achieve the above object, the present invention is as follows using technical solution:
A kind of ring cavity nano wire electrical pumping single-photon source device, from top to bottom successively include: p-type electrode, pin nano wire,
Quantum dot, multilayer concentric ring cavity, n-type electrode, lower layer's n-type material and substrate；Wherein:
The substrate is located at the bottom, and the upper surface of substrate is lower layer's n-type material, and the upper surface of lower layer's n-type material is pin nanometers
Line, quantum dot, multilayer concentric ring cavity, n-type electrode, p-type electrode are located at the upper surface of pin nano wire；
The multilayer concentric ring cavity is located at the outer layer of pin nano wire using pin nano wire as the center of circle；
The n-type electrode is located at the outer layer of multilayer concentric ring cavity using pin nano wire as the center of circle in a ring, and close to lower layer n
The edge of profile material (6)；
The pin nano wire is located on the center of lower layer's n-type material, and quantum dot embedding is in the intrinsic layer of pin nano wire (2)
In.
The material of the p-type electrode includes one of graphene, ITO, AZO, Au, Ti, Ni, Pt or a variety of mixing.It is right
The material transparent to emergent light is used in the device for going out light upwards from substrate face, for going out the device of light downwards from substrate back
Using the material to emergent light high reflection.
The pin nano wire is by p-type material, Intrinsical, three layers of the n-type material pin structure constituted.Wherein, p-type layer material
Material position forms Ohmic contact in top layer, with p-type electrode.
The quantum dot is located in the intrinsic layer of pin nano wire, is the material that forbidden bandwidth is less than pin nano wire, with pin
Nano wire constitutes single quantum together.
The multilayer concentric ring cavity replaces structure using pin nano wire as the center of circle, by the different material of two or more refractive index
At material includes air, dielectric insulation materials, metal material.The multilayer concentric ring cavity is that multilayer concentric annulus is constituted
Circular ring shape Bragg microcavity can generate the enhancing of electromagnetic field local, can utilize amber in center location, i.e. pin nanometers of line position
Sai Er effect enhances the radiation efficiency of quantum dot single-photon source, and can limit light in the two spaces dimension perpendicular to nano wire
The diverging of son makes single photon only be emitted along nano wire direction, greatly improve light Collection utilization efficiency.
The n-type electrode and lower layer's n-type material form N-shaped Ohmic contact, the material of n-type electrode be graphene, ITO,
Any one or more mixing in AZO, Au, Ti, Ni, Pt；
Lower layer's n-type material is consistent with the material of n-type material in pin nano wire.
The substrate uses the material transparent to emergent light for going out the device of light downwards from substrate back.
Ring cavity nano wire electrical pumping single-photon source device proposed by the present invention can be as being emitted upwards from substrate face
Single-photon source device, and can be as the single-photon source device being emitted downwards from substrate back.As normal emergence single-photon source device
When part, p-type electrode uses the material transparent to emergent light, such as graphene, ITO, AZO；Single-photon source device is being emitted as back
When, p-type electrode uses the material to emergent light high reflection, such as metal Au, Pt, Ti/Au, at this moment can limit photon only along nanometer
The outgoing of line N-shaped one end, further improves the directionality of single-photon source.
Beneficial effects of the present invention are as follows:
1, it while realizing electrical pumping work, can be imitated using the radiation of Purcell effect enhancing quantum dot single-photon source
Rate, and single photon can be made only to be emitted along nano wire direction in the diverging of the two spaces dimension limitation photon perpendicular to nano wire,
It is easy to integrated with fiber coupling, greatlys improve light Collection utilization efficiency；
It 2, can be as the single-photon source device being emitted upwards from substrate face and as being emitted downwards from substrate back
Single-photon source device, and as back be emitted single-photon source device when can limit photon only along nano wire one end be emitted, into
The directionality of one step improvement single-photon source.
Detailed description of the invention
Fig. 1 is three dimensional structure diagram of the invention.
Fig. 2 is structural schematic diagram of the structure shown in Fig. 1 along circle ring center section.
Fig. 3 is the AlGaN/GaN ring cavity nano wire electrical pumping single-photon source device based on graphene transparent p-type electrode
Purcell enhancement factor calculated value.
Wherein, appended drawing reference are as follows: 1 is p-type electrode；2 be pin nano wire；3 be quantum dot；4 be multilayer concentric ring cavity；5 are
N-type electrode；6 be lower layer's n-type material；7 be substrate.
Specific embodiment
Embodiment 1
A kind of AlGaN/GaN ring cavity nano wire electrical pumping single-photon source device based on graphene transparent p-type electrode.As Fig. 1,
Shown in 2, in which: 1 is graphene transparent p-type electrode；2 receive for p-AlGaN/i-AlGaN/GaN-Qdot/i-AlGaN/n-AlGaN
Rice noodles；3 be the GaN quantum dot being embedded into pin AlGaN nano wire；4 be AlGaN and spin on glass (SOG) is constituted
The thickness of multilayer concentric ring cavity, concentric ring cavity is a quarter of effective wavelength；5 n-type electrodes constituted for Pt/Au；6 be N-shaped
AlGaN epitaxial material；7 be AlN substrate.The Bragg grating that this structure is made of multilayer concentric ring cavity limits vertical nano-wire
The photon of two spaces dimension diverging emits single photon only along nano wire both ends, has good directionality, and concentric ring
Localized modes photon density increase in microcavity greatly increases the rate of quantum dot radiation single photon.Fig. 3 is for launch wavelength
The Purcell enhancement factor that the AlGaN/GaN quantum dot of 325nm/nano wire single-photon source device calculates, has reached 80 times.
The device the preparation method is as follows:
The list of p-AlGaN/i-AlGaN/GaN-Qdot/i-AlGaN/n-AlGaN multilayered structure is first grown on AlN substrate
Quantum Well epitaxial wafer；Then the nanometer figure of annular concentric and center circle is generated on it by electron beam lithography or nano impression
Shape；Thereafter ring cavity nanowire structure is generated using dry etching combination wet etching；Utilize spin on glass (SOG) will later
The gap of ring cavity is filled, and in nano wire apical growth graphene transparent p-type electrode；Finally annular is etched in ring cavity structure peripheral
Table top simultaneously deposits Pt/Au n-type electrode.
Embodiment 2
A kind of InGaAs/InAs ring cavity nano wire electrical pumping single-photon source device based on Ti/Au high reflection p-type electrode.Such as
Fig. 1, shown in 2, in which: 1 is Ti/Au high reflection p-type electrode；2 be p-InGaAs/i-InGaAs/InAs/i-InGaAs/n-
InGaAs nano wire；3 be the InAs quantum dot being embedded into pin InGaAs nano wire；4 be Al2O3The multilayer constituted with air
The thickness of concentric ring cavity, concentric ring cavity is a quarter of effective wavelength；5 n-type electrodes constituted for Ni/Au；6 be N-shaped
InGaAs epitaxial material；7 be GaAs substrate.The Bragg grating that this structure is made of multilayer concentric ring cavity limits vertical nanowires
The photon of line two spaces dimension diverging limits the photon dissipated along nano wire p-type end by Ti/Au high reflection p-type electrode, thus
Emit single photon downwards only along the super substrate back in nano wire N-shaped one end, and the localized modes photon density in concentric ring microcavity
Increasing greatly increases the rate of quantum dot radiation single photon.
The device the preparation method is as follows: first make circle SiO on gaas substrates2Nano graph mask, then on it
Selective area growth p-InGaAs/i-InGaAs/InAs/i-InGaAs/n-InGaAs nanowire structure；ALD deposition skill is utilized later
Art is by nano wire periphery Al2O3It fills and leads up, and in apical growth Ti/Au high reflection p-type electrode；It thereafter is the center of circle around nano wire
Circular nano figure is generated, and ring cavity structure is generated using dry etching combination wet etching；Finally carved in ring cavity structure peripheral
Erosion circular table simultaneously deposits Ni/Au n-type electrode.
The above embodiment is only preferred case of the invention, and the interest field that the present invention is advocated is not limited to these
Embodiment, any modification for not departing from the spirit and scope of the present invention, deformation all should belong to protection scope of the present invention.
Claims (6)
1. a kind of ring cavity nano wire electrical pumping single-photon source device, it is characterised in that: including p-type electrode (1), pin nano wire
(2), quantum dot (3), multilayer concentric ring cavity (4), n-type electrode (5), lower layer's n-type material (6) and substrate (7)；
The substrate (7) is located at the bottom, and the upper surface of substrate (7) is lower layer's n-type material (6), the upper surface of lower layer's n-type material (6)
For pin nano wire (2), quantum dot (3), multilayer concentric ring cavity (4), n-type electrode (5), p-type electrode (1) is located at pin nano wire
The upper surface of (2)；P-type electrode (1) material includes one of graphene, ITO, AZO, Au, Ti, Ni, Pt or a variety of mixing；
Device for going out light upwards from substrate face uses the material transparent to emergent light, for going out the device of light downwards from substrate back
Part uses the material to emergent light high reflection；The pin nano wire (2) is made of pin knot p-type material, Intrinsical, n-type material
Structure；Wherein, p-type material is located at top layer, forms Ohmic contact with p-type electrode (1)；
The multilayer concentric ring cavity (4) is with the outer layer that pin nano wire (2) are that the center of circle is located at pin nano wire (2)；
The n-type electrode (5) is located at the outer layer of multilayer concentric ring cavity (4) in a ring with pin nano wire (2) for the center of circle, and close
The edge of lower layer's n-type material (6)；
The pin nano wire (2) is located on the center of lower layer's n-type material (6), and quantum dot (3) is embedded into pin nano wire (2) originally
It levies in layer.
2. ring cavity nano wire electrical pumping single-photon source device according to claim 1, it is characterised in that: the quantum dot
(3) in the intrinsic layer of pin nano wire (2), the material of pin nano wire (2) is less than using forbidden bandwidth, with pin nano wire
(2) single quantum is constituted together.
3. ring cavity nano wire electrical pumping single-photon source device according to claim 1, it is characterised in that: the multilayer concentric
Ring cavity (4) is alternately made of the different material of two or more refractive index, and the material includes air, dielectric insulation materials, gold
Belong to material.
4. ring cavity nano wire electrical pumping single-photon source device according to claim 1, it is characterised in that: the n-type electrode
(5) with lower layer's n-type material (6) formed N-shaped Ohmic contact, the material of n-type electrode (5) include graphene, ITO, AZO, Au, Ti,
One of Ni, Pt or a variety of mixing.
5. ring cavity nano wire electrical pumping single-photon source device according to claim 1, it is characterised in that: lower layer's N-shaped
Material (6) is consistent with the n-type material material in pin nano wire (2).
6. ring cavity nano wire electrical pumping single-photon source device according to claim 1, it is characterised in that: the substrate (7)
Device for going out light downwards from substrate back uses the material transparent to emergent light.
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| CN107452844B (en) * | 2017-07-21 | 2023-06-30 | 中国工程物理研究院电子工程研究所 | Hyperbolic metamaterial composite grating reinforced high-frequency quantum dot single photon source |
| CN107359404B (en) * | 2017-07-25 | 2023-06-16 | 中国工程物理研究院电子工程研究所 | Ring cavity nano-antenna for regulating and controlling radiation of multiple random incoherent single photon emitters |
| CN108365517B (en) * | 2018-01-03 | 2020-12-29 | 中山大学 | Preparation method of bicolor single photon source structure and prepared structure |
| CN114866056B (en) * | 2022-04-27 | 2023-05-12 | 中国工程物理研究院电子工程研究所 | Piezoelectric driven zinc oxide nanowire resonator |
| WO2023215601A1 (en) * | 2022-05-05 | 2023-11-09 | The Regents Of The University Of Colorado, A Body Corporate | Quantum light source with dual optical cavities |
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