CN108365517B - Preparation method of bicolor single photon source structure and prepared structure - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000002070 nanowire Substances 0.000 claims abstract description 56
- 239000002096 quantum dot Substances 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 238000005516 engineering process Methods 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- 229910052582 BN Inorganic materials 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
- 238000005844 autocatalytic reaction Methods 0.000 claims description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 4
- ROUIDRHELGULJS-UHFFFAOYSA-N bis(selanylidene)tungsten Chemical compound [Se]=[W]=[Se] ROUIDRHELGULJS-UHFFFAOYSA-N 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000000799 fluorescence microscopy Methods 0.000 claims description 4
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 239000010408 film Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 7
- 229910000673 Indium arsenide Inorganic materials 0.000 description 6
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
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- 238000011160 research Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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Abstract
The invention provides a preparation method of a bicolor single photon source structure, which comprises the following steps: s1, growing and preparing a nanowire single quantum dot structure on a semiconductor substrate; s2, partially flattening the nanowire single quantum dot structure to expose a stress island at the top end of the nanowire; and S3, manufacturing a two-dimensional film by using a mechanical stripping method, and transferring the two-dimensional film to a stress island to finish the preparation.
Description
Technical Field
The invention relates to the technical field of semiconductor materials and devices, in particular to a preparation method and a prepared structure of a bicolor single photon source structure integrating nanowire quantum dots and a two-dimensional material film.
Background
In recent years, quantum information technologies developed based on quantum mechanics principles, such as quantum computers, quantum key distribution, quantum invisible propagation and other applications, gradually show great social and economic prospects. The high-quality single photon source and the entanglement photon source are preconditions for ensuring accurate coding and efficient transmission and storage of information, and are important bases for practical application of quantum information technologies such as future optical quantum computation and quantum secret communication.
The low-density quantum dots grown in a Stranski-Krastanov (SK) mode are used for preparing a single photon source due to the fact that the low-density quantum dots can periodically optically pump or electrically inject electrons and holes in a two-level-like system and have atom-like spectra at low temperature. The tunable photonic crystal oscillator has the advantages of high oscillator strength, narrow spectral line width, tunable wavelength, easiness in integration and the like. The quantum dots are coupled with the conical nanowire structure, the wide spectral range of the quantum dots can be enhanced, the far-field light spots are approximately in Gaussian distribution by designing the conical top, and the efficiency of entering the optical fiber after passing through the lens can reach 99%. However, in the presently reported nanowire quantum dot quantum light source, the problems of deterministic coupling of self-organized quantum dots and nanowire structures, wavelength expansion and the like are still to be solved.
The single photon source based on two-dimensional material defect luminescence or localized exciton state luminescence has proven to have the advantages of simple preparation, adjustable wavelength and the like. The invention provides a self-aligned and highly integrated semiconductor bicolor single photon emission source which is integrated with a nanowire quantum dot structure, and provides favorable conditions for subsequent quantum optical experiments (bicolor single photons sum frequency, difference frequency, multi-dimensional multiplexing of quantum communication and the like), so that the invention has important theoretical research and practical application values.
Disclosure of Invention
The invention aims to provide a preparation method of a bicolor single photon source structure which can use a stress island at the top end of a nanowire to enable a two-dimensional film to generate defect luminescence or localized high-brightness exciton state and then is constructed together with the exciton state emitted by a single quantum dot of the structure.
In order to realize the purpose, the technical scheme is as follows:
the preparation method of the bicolor single photon source structure comprises the following steps:
s1, growing and preparing a nanowire single quantum dot structure on a semiconductor substrate;
s2, partially flattening the nanowire single quantum dot structure to expose a stress island at the top end of the nanowire;
and S3, manufacturing a two-dimensional film by using a mechanical stripping method, and transferring the two-dimensional film to a stress island to finish the preparation.
Preferably, the material of the semiconductor substrate is GaAs, InP, or Si.
Preferably, the height of the nanowire single quantum dot structure is 2-3 μm, the quantum dot is located at the axial position of the nanowire, the diameter of the located position needs to meet the single transverse mode condition, the vertex angle of the nanowire is in a conical shape, and the angle of the conical angle is 2o。
Preferably, the height range of the stress island exposed at the top end of the nanowire after planarization is 150-200 nm.
Preferably, the step S1 prepares the nanowire single quantum dot structure by the means 1) or 2):
1) growing a nanowire single quantum dot structure by liquid drop autocatalysis;
2) growing self-organized quantum dots with a density of less than 10-8/cm-2And then, preparing by utilizing a quantum dot fluorescence imaging method and utilizing an electron beam exposure and inductively coupled plasma etching technology.
Preferably, the step S2 adopts SU8 series photoresist/benzocyclobutene and corresponding exposure technology to partially planarize the nanowire single quantum dot structure.
Preferably, the material of the two-dimensional thin film is tungsten diselenide or hexagonal boron nitride.
Meanwhile, the invention also aims to provide the bicolor single photon source structure prepared by the preparation method.
Compared with the prior art, the invention has the beneficial effects that:
the invention adopts the stress island at the top end of the nanowire to carry out better three-dimensional limitation on defect state carriers of the two-dimensional film, can prepare a more efficient single photon source and further improves the working temperature. On the other hand, the bicolor single photon source provided by the invention has the advantages of self-alignment, adjustable wavelength, high emission efficiency, good controllability and simple preparation process, and has the possibility of preparing bicolor quantum devices on a large scale. Therefore, the method has great application potential in the field of quantum information.
Drawings
FIG. 1 is a schematic flow diagram of a preparation method.
Fig. 2 is a schematic diagram of the prepared structure.
Fig. 3 is an SEM image of the prepared nanowire quantum dot structure.
Detailed Description
The drawings are for illustrative purposes only and are not to be construed as limiting the patent;
the invention is further illustrated below with reference to the figures and examples.
Example 1
The embodiment provides a preparation method of a bicolor single photon source structure, fig. 1 is a preparation flow chart of the preparation method, and in combination with fig. 2, the preparation method provided by the invention comprises the following steps:
in a first step, a nanowire single quantum dot structure 2 is grown and prepared on a semiconductor substrate 1.
In this embodiment, the nanowire single quantum dot structure 2 can be prepared by the following method 1) or 2):
1) a GaN/AlN or InAs/InP nanowire single quantum dot structure 2 grown by liquid drop autocatalysis; the quantum dots are positioned in the axial direction of the nanowire, and the substrate 1 has no selectivity;
2) growing InAs/GaAs, GaAs/AlGaAs or InAs/InP self-organized quantum dots, wherein the density of the self-organized quantum dots is less than 10-8/cm-2And then, preparing by utilizing a quantum dot fluorescence imaging method and utilizing an electron beam exposure and inductively coupled plasma etching technology. An SEM image of a typical nanowire quantum dot structure is shown in fig. 3. The two growth modes can select molecular beam epitaxy or metal organic compound chemical vapor deposition method.
It should be noted that, in order to generate nanowire quantum dot single photon emission with high extraction efficiency, as shown in fig. 2, the size of the nanowire single quantum dot structure 2 should be satisfied, the height thereof is about 2-3 μm, the quantum dot is located in the axial direction of the nanowire, the diameter of the quantum dot at the position thereof should satisfy the single transverse mode condition, the vertex angle of the nanowire single quantum dot structure 2 should be a cone, and the angle of the cone angle is about 2o。
And secondly, partially flattening the nanowire single quantum dot structure 2 to expose the stress island 3 at the top end of the nanowire.
In the scheme, the nanowire single quantum dot structure 2 is partially flattened by adopting SU8 series photoresist/benzocyclobutene and a corresponding exposure technology. Wherein, as shown in FIG. 2, the height range of the stress island 3 exposing the top end of the nanowire after planarization is 150-200 nm. Facilitating the generation of localized excitons 5 of high brightness upon application of suitable stress to the two-dimensional film 4.
And thirdly, manufacturing the two-dimensional film 4 by using a mechanical stripping method, and transferring the two-dimensional film 4 to the stress island 3 to finish the preparation.
Wherein the two-dimensional thin film 4 is made of tungsten diselenide (WSe)2) Or hexagonal boron nitride (hBN), and localized exciton state light emitting two-dimensional materials.
Thus, the preparation process is completely introduced.
Example 2
The embodiment provides a bicolor single photon source structure, the preparation flow of which is shown in fig. 1, and the prepared structure is shown in fig. 2 and 3.
The preparation process comprises the following steps:
s1, growing and preparing a nanowire single quantum dot structure 2 on a semiconductor substrate 1;
s2, partially flattening the nanowire single quantum dot structure 2 to expose a stress island 3 at the top end of the nanowire;
and S3, manufacturing the two-dimensional film 4 by using a mechanical stripping method, and transferring the two-dimensional film 4 to the stress island 3 to finish the preparation.
In the scheme, the bicolor single photon source structure provided by the invention can use the stress island 3 at the top end of the nanowire to enable the two-dimensional film 4 to generate defect luminescence or localized high-brightness exciton state 5, and then the structure is constructed together with the exciton state emitted by the single quantum dot of the structure.
In this embodiment, the material of the semiconductor substrate 1 is GaAs, InP, or Si.
In this embodiment, the height of the nanowire single quantum dot structure 2 is 2-3 μm, the quantum dot is located at the axial position of the nanowire, the diameter of the position needs to satisfy the single transverse mode condition, the vertex angle of the nanowire is a cone, and the angle of the cone angle is 2o。
In this embodiment, the height range of the stress island 3 exposed at the top end of the nanowire after planarization is 150-200 nm.
In this embodiment, the step S1 is to prepare the nanowire single quantum dot structure 2 by the method 1) or 2), and the growth of the two structures can be selected from molecular beam epitaxy or metal organic compound chemical vapor deposition:
1) the GaN/AlN, InAs/InP nanowire single quantum dot structure grows by liquid drop autocatalysis, the quantum dot is positioned in the axial direction of the nanowire, and the substrate has no selectivity;
2) growing InAs/GaAs, GaAs/AlGaAs or InAs/InP self-organized quantum dots with density less than 10-8/cm-2And then, preparing by utilizing a quantum dot fluorescence imaging method and utilizing an electron beam exposure and inductively coupled plasma etching technology.
In this embodiment, in step S2, a photoresist/benzocyclobutene and a corresponding exposure technique are used to partially planarize the nanowire single quantum dot structure 2.
In this embodiment, the two-dimensional thin film 4 is made of tungsten diselenide or hexagonal boron nitride.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (6)
1. The preparation method of the bicolor single photon source structure is characterized by comprising the following steps of: the method comprises the following steps:
s1, growing and preparing a nanowire single quantum dot structure on a semiconductor substrate, wherein the height of the nanowire single quantum dot structure is 2-3 mu m, quantum dots are located at the axial position of a nanowire, the diameter of the located position needs to meet the condition of a single transverse mode, the vertex angle of the nanowire is in a conical shape, and the angle of the conical angle is 2 degrees;
s2, partially flattening the nanowire single quantum dot structure to expose the stress island at the top end of the nanowire, wherein the height range of the stress island exposed at the top end of the nanowire after flattening is 150-200 nm;
and S3, manufacturing a two-dimensional film by using a mechanical stripping method, and transferring the two-dimensional film to a stress island to finish the preparation.
2. The method of claim 1, wherein the method comprises the steps of: the semiconductor substrate is made of GaAs, InP or Si.
3. The method of claim 1, wherein the method comprises the steps of: the step S1 prepares the nanowire single quantum dot structure by the mode 1) or 2):
1) growing a nanowire single quantum dot structure by liquid drop autocatalysis;
2) growing self-organized quantum dots with a density of less than 10-8/cm-2And then, preparing by utilizing a quantum dot fluorescence imaging method and utilizing an electron beam exposure and inductively coupled plasma etching technology.
4. The method of claim 1, wherein the method comprises the steps of: and in the step S2, partial planarization is carried out on the nanowire single quantum dot structure by adopting SU8 series photoresist/benzocyclobutene and a corresponding exposure technology.
5. The method for preparing a bicolor single photon source structure according to any one of claims 1 to 4, wherein the method comprises the following steps: the two-dimensional film is made of tungsten diselenide or hexagonal boron nitride.
6. A bicolor single photon source structure is characterized in that: the preparation method of any one of claims 1 to 5.
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| CN111463659B (en) * | 2019-01-21 | 2021-08-13 | 华为技术有限公司 | Quantum dot semiconductor optical amplifier and preparation method thereof |
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| CN107342351B (en) * | 2017-06-22 | 2019-04-05 | 北京工业大学 | One kind being based on oblique ZnO nano-wire/GaN pn-junction LED and preparation method |
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| US20130240348A1 (en) * | 2009-11-30 | 2013-09-19 | The Royal Institution For The Advancement Of Learning / Mcgill University | High Efficiency Broadband Semiconductor Nanowire Devices |
| CN101830430A (en) * | 2010-05-24 | 2010-09-15 | 山东大学 | Manufacture method of large-area highly uniform sequential quantum dot array |
| CN102437511A (en) * | 2011-12-21 | 2012-05-02 | 东南大学 | Surface plasmon laser of semiconductor nanowire-metal film structure |
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