CN107359226A - A kind of single-photon source device of high emission speed, high collection efficiency - Google Patents
A kind of single-photon source device of high emission speed, high collection efficiency Download PDFInfo
- Publication number
- CN107359226A CN107359226A CN201710764081.6A CN201710764081A CN107359226A CN 107359226 A CN107359226 A CN 107359226A CN 201710764081 A CN201710764081 A CN 201710764081A CN 107359226 A CN107359226 A CN 107359226A
- Authority
- CN
- China
- Prior art keywords
- photon source
- rod
- source device
- metallic film
- collection efficiency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 239000002073 nanorod Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 31
- 229910052737 gold Inorganic materials 0.000 claims description 15
- 239000010931 gold Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 235000007164 Oryza sativa Nutrition 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 235000009566 rice Nutrition 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 26
- 239000010409 thin film Substances 0.000 description 9
- 239000002096 quantum dot Substances 0.000 description 8
- 239000003623 enhancer Substances 0.000 description 5
- 238000002207 thermal evaporation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004038 photonic crystal Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 238000001215 fluorescent labelling Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses the single-photon source device of a kind of high emission speed, high collection efficiency, including：Substrate, metallic film, medium strip, metal nano-rod and single-photon source, in substrate, medium strip is deposited on metallic film deposit metal films；Metallic film and medium strip form medium load-bearing surface phasmon waveguide, and the medium load-bearing surface phasmon waveguide is used to collect the photon that single-photon source emits；Metal nano-rod is located at the inside of medium load-bearing surface phasmon waveguide, and single-photon source is between metal nano-rod and metallic film；Metallic film and metal nano-rod form gap phasmon micro-cavity structure, and the gap phasmon micro-cavity structure is used to form gap phasmon, to strengthen the emission rate of single-photon source.The advantage of the invention is that：The emission rate of single-photon source can greatly be strengthened, improve the collection efficiency of single photon, and can realize that the orientation of pattern in waveguide excites.The present invention has huge application value in fields such as quantum information, integrated photonic devices.
Description
Technical field
The present invention relates to single-photon source technology, phasmon photonic propulsion, quantum information field, in particular to a kind of high emission
The single-photon source device of speed, high collection efficiency.
Background technology
Single-photon source refers to that synchronization only launches the light source of a photon, and it has important work in quantum information field
With, such as the distribution of quantum key, linear optics quantum calculation, quantum cryptography and quantum information processing etc..It is in addition, single
Photon source also has significant application value in the field such as accurate measurement and biological fluorescent labelling imaging.Often it is used to produce single photon
Material includes semiconductor-quantum-point, fluorescence molecule and diamond NV colour centers etc..Generally, single-photon source in free space spontaneous
Rate of irradiation is relatively low, and launches single photon and do not have directionality, causes collection efficiency very low, and limiting their reality should
With.
In order to improve the emission rate of single-photon source, increase it and launch the collection efficiency of single photon, strengthen single-photon source
Quality, single-photon source can be placed in the micro-nano structure such as photonic crystal and medium microcavity.Based on Purcell effect, that is, pass through
The electromagnetic field local density of state changed around single-photon source can strengthen its spontaneous emission rate, can utilize above-mentioned micro-nano structure
Improve the quantum efficiency of single photon emission.It can also regulate and control the luminous direction of single-photon source by designing micro-nano structure, improve single
The collection efficiency of photon source.But the Purcell enhancer of photonic crystal and medium microcavity increase single-photon source generally only has
Tens times, it is impossible to fully meet application request.
The content of the invention
It is an object of the invention to the above-mentioned the deficiencies in the prior art of customer service, there is provided a kind of and medium load-bearing surface phasmon
The integrated single-photon source device of waveguide, it is possible to increase the emission rate of single-photon source, and utilize medium load-bearing surface phasmon
Waveguide high efficiency collects the photon that single-photon source is launched.
To achieve the above object, the technical solution adopted by the present invention is as follows：
A kind of single-photon source device of high emission speed, high collection efficiency, including：Substrate, metallic film, medium strip, metal are received
Rice rod and single-photon source, in substrate, medium strip is deposited on metallic film the deposit metal films；The metallic film and
Medium strip forms medium load-bearing surface phasmon waveguide；The metal nano-rod is located at the medium load-bearing surface phasmon
The inside of waveguide, the length direction of metal nano-rod are consistent with the length direction of medium strip；The single-photon source is received positioned at metal
Between rice rod and metallic film；The metallic film and metal nano-rod form gap phasmon micro-cavity structure.
The medium load-bearing surface phasmon waveguide, the photon emitted for collecting single-photon source.
The gap phasmon micro-cavity structure, for forming gap phasmon, improve the emission rate of single-photon source.
For above-mentioned single-photon source device architecture, wherein：
The material of the substrate is but is not limited to Si, SiO2Or Al2O3；The material of the metallic film include but is not limited to gold,
Silver, platinum, aluminium or copper, the thickness of metallic film is 100 ~ 200nm.
The material of the medium strip includes but is not limited to SiO2, PMMA and Si3N4；The cross section of the medium strip is rectangle,
Or it is semicircle, or half elliptic, or triangle.
The material of the metal nano-rod includes but is not limited to gold, silver, platinum, aluminium or copper, its section is circular, ellipse,
Triangle, hexagon or rectangle；A diameter of 10 ~ 100nm of the metal nano-rod, length are 10 ~ 300nm.
The distance between the metal nano-rod and metallic film are 5 ~ 50nm.
The single-photon source is semiconductor-quantum-point, diamond colour center or fluorescence molecule, but it is several to be not limited to this；
The single-photon source device architecture applicable wavelengths are near ultraviolet, visible ray near infrared range.
During using the present invention, have the advantages that：
The single-photon source device because with metal nano-rod, it can form dipole photon under incident light irradiation so that
The gap phasmon micro-cavity structure formed by metal nano-rod and metallic film forms gap plasmon resonance, has hundreds of
Again to thousands of times of field enhancement effect；
Single-photon source is placed in the phasmon micro-cavity structure of gap, passes through the phase interaction of gap phasmon and single-photon source
With using Purcell effect, the emission rate of single-photon source being effectively improved, solved in the prior art due to single-photon source
The problem of relatively low practical application of emission rate is restricted；
Metal nano-rod and single-photon source are arranged in medium load-bearing surface phasmon waveguide so that medium load-bearing surface etc.
The photon that can be launched from excimer waveguide with very high efficiency collection single-photon source；
Medium load-bearing surface phasmon waveguide is a kind of to can be used for integrated waveguiding structure, therefore monochromatic light disclosed by the invention
Component device has huge application value in fields such as integrated photonic devices；
By changing position of the single-photon source in phasmon micro-cavity structure, make the light field in the phasmon micro-cavity structure of gap
In asymmetric distribution, it can also realize that the light energy that different directions are collected into medium load-bearing surface phasmon waveguide is different,
So as to realize asymmetric the exciting of medium load-bearing surface phasmon waveguide mode.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the overlooking the structure diagram of single-photon source device architecture in Fig. 1.
Fig. 3 is the left view structural representation of single-photon source device architecture in Fig. 1.
Fig. 4 is that the relation that the Purcell enhancers calculated value of the present invention changes with metal nano-rod length change is shown
It is intended to.
Wherein, reference is：1 is substrate；2 be metallic film；3 be medium strip；4 be metal nano-rod；5 be single photon
Source；6 be incident light.
Embodiment
For present disclosure, technical scheme and advantage is more clearly understood, below in conjunction with the accompanying drawings to the tool of the present invention
Body embodiment elaborates.
Embodiment 1
As shown in accompanying drawing 1,2,3, the invention provides one kind to be based on gap phasmon and medium load-bearing surface phasmon ripple
The high emission speed led, the single-photon source device of high collection efficiency, the single-photon source device include SiO2Substrate 1, medium carrying
Surface plasmon waveguide, gap phasmon microcavity and quantum dot 5.
The gap phasmon microcavity is made up of metallic film 2 and metal nano-rod 4, for forming gap etc. from sharp
Member；Wherein：Metallic film 2 is gold thin film, and metal nano-rod 4 is gold nanorods.
In the gap phasmon microcavity that quantum dot 5 is located at gold thin film 2 and gold nanorods 4 form；Medium load-bearing surface etc.
Include gold thin film 2 and SiO from excimer waveguide2Medium strip 3, the photon launched for collecting quantum dot 5.Gold nanorods 4 and gold
The distance between film 2 is 10nm, and quantum dot 5 is located at the centre of gap phasmon microcavity, the distance with the upper surface of gold thin film 2
For 5nm, a diameter of 45nm, SiO of gold nanorods 42The cross section length and width of medium strip 3 are 240nm, and the thickness of gold thin film 2 is
200nm。
The preparation method of the single-photon source device is as follows：
1）In SiO2Gold thin film 2 in substrate 1 by thermal evaporation or electron-beam evaporation thickness for 200nm；
2）Pass through thermal evaporation deposition 5nm thickness SiO in gold thin film 22Film；
3）In SiO2Spin coating quantum dot solution on film；
4）Pass through the thick SiO of thermal evaporation redeposition 5nm2Film；
5）Gold nanorods 4 are prepared by chemical method or micro-nano manufacturing method；
6）In step 1）To 4）Spin coating gold nanorods monodisperse liquor on the multilayer membrane sample of preparation；
7）Using the position of the adjustment gold nanorods 4 such as nano-machine hand or AFM, the upper of quantum dot 5 is located at
Side；
8）SiO thick thermal evaporation deposition 230nm2Film；
9）SiO by photoetching and dry etching by total thickness for 240nm2Processing film into it is wide also be 240nm medium strip 3.
Fig. 4 be for launch wavelength be 680nm based on gap phasmon and medium load-bearing surface phasmon waveguide
Single-photon source device calculate Purcell enhancers with gold nanorods length change relation, when the length of gold nanorods is
At 100 nanometers, high Purcell enhancer reaches maximum for 3320 times, wherein quantum dot 5 launch optically coupling to medium
Efficiency in load-bearing surface phasmon waveguide is 41.45%.By adjusting single-photon source in gold thin film/gold nanorods gap etc.
From the position of excimer microcavity, it can also realize that the asymmetric of pattern excites in medium load-bearing surface phasmon waveguide.Optimization knot
Fruit is that, when quantum dot is located at gold thin film/gold nanorods gap phasmon microcavity left end, waveguide or so both direction is collected into
The energy ratio of light is 1：16.
Embodiment 2
A kind of high emission speed based on gap phasmon and medium load-bearing surface phasmon waveguide, high collection efficiency monochromatic light
Component device, as shown in Figure 1, 2, 3, the single-photon source device include Si substrates 1, Ag films 2, Si3N4Medium strip 3, gold nanorods
4 and fluorescence molecule 5.
Ag films 2 and gold nanorods 4 form gap phasmon microcavity, for forming gap phasmon；Fluorescence molecule 5
In the gap phasmon microcavity formed positioned at Ag films 2 and gold nanorods 4；Ag films 2 and Si3N4Medium strip 3 forms medium and held
Carry surface plasmon waveguide, the photon launched for collecting fluorescence molecule 5.
The distance between gold nanorods 4 and Ag films 2 are 10nm, and fluorescence molecule 5 is located in the phasmon microcavity of gap
Between, the distance with the upper surface of Ag films 2 is 5nm, a diameter of 30nm, Si of gold nanorods3N4The cross section of medium strip 3 is long and wide
It is 220nm, the thickness of Ag films 2 is 150nm.
By being calculated when gold nanorods length is 48nm, it is 3786 that high Purcell enhancer, which reaches maximum,
What wherein fluorescence molecule 5 was launched is 43.02% optically coupling to the efficiency in medium load-bearing surface phasmon waveguide.
Above case study on implementation is only the preferred case of the present invention, and the interest field that the present invention is advocated is not limited to the implementation
Case, any modification for not departing from the spirit and scope of the present invention, deformation should all belong to protection scope of the present invention.
Claims (10)
1. the single-photon source device of a kind of high emission speed, high collection efficiency, including：Substrate（1）, metallic film（2）, medium strip
（3）, metal nano-rod（4）, single-photon source（5）, the metallic film（2）It is deposited on substrate（1）On, medium strip（3）It is deposited on
Metallic film（2）On；The metallic film（2）And medium strip（3）Form medium load-bearing surface phasmon waveguide, the medium
The waveguide of load-bearing surface phasmon is used to collect the photon that single-photon source emits；The metal nano-rod（4）Positioned at described
Inside medium load-bearing surface phasmon waveguide, metal nano-rod（4）Length direction and medium strip（3）Length direction one
Cause；The single-photon source（5）Positioned at metal nano-rod（4）And metallic film（2）Between；The metallic film（2）Received with metal
Rice rod（4）Gap phasmon micro-cavity structure is formed, the gap phasmon micro-cavity structure is used to form gap phasmon,
To strengthen the emission rate of single-photon source.
2. the single-photon source device of high emission speed according to claim 1, high collection efficiency, it is characterised in that：It is described
Substrate（1）Material be Si, or SiO2, or Al2O3。
3. the single-photon source device of high emission speed according to claim 1, high collection efficiency, it is characterised in that：It is described
Metallic film（2）Material be gold, or silver, or platinum, or aluminium, or copper；The metallic film（2）Thickness be 100 ~ 200nm.
4. the single-photon source device of high emission speed according to claim 1, high collection efficiency, it is characterised in that：It is described
Medium strip（3）Material be SiO2, or PMMA, or Si3N4；The medium strip（3）Cross section be rectangle, it is or semicircle, or half
Ellipse, or triangle.
5. the single-photon source device of high emission speed according to claim 1, high collection efficiency, it is characterised in that：It is described
Metal nano-rod（4）Material be gold, or silver, or platinum, or aluminium, or copper.
6. the single-photon source device of high emission speed according to claim 5, high collection efficiency, it is characterised in that：It is described
Metal nano-rod（4）Section be circle, or ellipse, or triangle, or hexagon, or rectangle.
7. the single-photon source device of the high emission speed, high collection efficiency according to claim 5 or 6, it is characterised in that：Institute
State metal nano-rod（4）A diameter of 10 ~ 100nm, length is 10 ~ 300nm.
8. the single-photon source device of high emission speed according to claim 1, high collection efficiency, it is characterised in that：It is described
Metal nano-rod（4）With metallic film（2）The distance between be 5 ~ 50nm.
9. the single-photon source device of high emission speed according to claim 1, high collection efficiency, it is characterised in that：It is described
Single-photon source（5）For semiconductor-quantum-point, or diamond colour center, or fluorescence molecule.
10. the single-photon source device of high emission speed according to claim 1, high collection efficiency, it is characterised in that：It is described
Single-photon source device architecture applicable wavelengths are near ultraviolet, visible ray near infrared range.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710764081.6A CN107359226A (en) | 2017-08-30 | 2017-08-30 | A kind of single-photon source device of high emission speed, high collection efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710764081.6A CN107359226A (en) | 2017-08-30 | 2017-08-30 | A kind of single-photon source device of high emission speed, high collection efficiency |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107359226A true CN107359226A (en) | 2017-11-17 |
Family
ID=60288532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710764081.6A Pending CN107359226A (en) | 2017-08-30 | 2017-08-30 | A kind of single-photon source device of high emission speed, high collection efficiency |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107359226A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107919604A (en) * | 2017-12-20 | 2018-04-17 | 中国工程物理研究院电子工程研究所 | Day blind ultraviolet single-photon source and preparation method thereof |
| CN108365517A (en) * | 2018-01-03 | 2018-08-03 | 中山大学 | The preparation method of dual-color single photon source structure and the structure of preparation |
| CN109540858A (en) * | 2018-11-26 | 2019-03-29 | 中国科学技术大学 | The measurement method and system of carrier concentration |
| CN110018534A (en) * | 2019-04-19 | 2019-07-16 | 国家纳米科学中心 | A kind of phasmon nano-cavity and the preparation method and application thereof generating biexction |
| CN111029446A (en) * | 2019-12-12 | 2020-04-17 | 电子科技大学 | Quantum dot single photon source and preparation method thereof |
| CN112038882A (en) * | 2020-08-21 | 2020-12-04 | 北京大学 | Integrated structure of single photon emitter and metal waveguide, preparation method thereof and quantum loop |
| CN112928452A (en) * | 2021-01-27 | 2021-06-08 | 南开大学 | Wideband spontaneous radiation enhanced tetramer metal nano antenna structure and manufacturing method and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120161663A1 (en) * | 2009-07-23 | 2012-06-28 | Commissariat A L'energie Atomique | Electrically driven single photon source |
| CN104009137A (en) * | 2014-05-30 | 2014-08-27 | 中国科学院物理研究所 | High-speed directional-transmission single-photon-source device |
| CN104183692A (en) * | 2014-08-15 | 2014-12-03 | 中国科学院上海技术物理研究所 | Superconductive nanowire single photon detector with responsivity enhanced based on metamaterials |
| CN207690822U (en) * | 2017-08-30 | 2018-08-03 | 中国工程物理研究院电子工程研究所 | A kind of single-photon source device of high emission rate, high collection efficiency |
-
2017
- 2017-08-30 CN CN201710764081.6A patent/CN107359226A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120161663A1 (en) * | 2009-07-23 | 2012-06-28 | Commissariat A L'energie Atomique | Electrically driven single photon source |
| CN104009137A (en) * | 2014-05-30 | 2014-08-27 | 中国科学院物理研究所 | High-speed directional-transmission single-photon-source device |
| CN104183692A (en) * | 2014-08-15 | 2014-12-03 | 中国科学院上海技术物理研究所 | Superconductive nanowire single photon detector with responsivity enhanced based on metamaterials |
| CN207690822U (en) * | 2017-08-30 | 2018-08-03 | 中国工程物理研究院电子工程研究所 | A kind of single-photon source device of high emission rate, high collection efficiency |
Non-Patent Citations (1)
| Title |
|---|
| FENG HUANG等: "Gap Surface Plasmon and Plasmonic Waveguide based Single Photon Source", 《2017 INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD)》 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107919604A (en) * | 2017-12-20 | 2018-04-17 | 中国工程物理研究院电子工程研究所 | Day blind ultraviolet single-photon source and preparation method thereof |
| CN107919604B (en) * | 2017-12-20 | 2023-06-16 | 中国工程物理研究院电子工程研究所 | Solar blind ultraviolet single photon source and preparation method thereof |
| CN108365517A (en) * | 2018-01-03 | 2018-08-03 | 中山大学 | The preparation method of dual-color single photon source structure and the structure of preparation |
| CN108365517B (en) * | 2018-01-03 | 2020-12-29 | 中山大学 | Preparation method of bicolor single photon source structure and prepared structure |
| CN109540858A (en) * | 2018-11-26 | 2019-03-29 | 中国科学技术大学 | The measurement method and system of carrier concentration |
| CN110018534A (en) * | 2019-04-19 | 2019-07-16 | 国家纳米科学中心 | A kind of phasmon nano-cavity and the preparation method and application thereof generating biexction |
| CN111029446A (en) * | 2019-12-12 | 2020-04-17 | 电子科技大学 | Quantum dot single photon source and preparation method thereof |
| CN111029446B (en) * | 2019-12-12 | 2022-05-27 | 电子科技大学 | Quantum dot single photon source and preparation method thereof |
| CN112038882A (en) * | 2020-08-21 | 2020-12-04 | 北京大学 | Integrated structure of single photon emitter and metal waveguide, preparation method thereof and quantum loop |
| CN112928452A (en) * | 2021-01-27 | 2021-06-08 | 南开大学 | Wideband spontaneous radiation enhanced tetramer metal nano antenna structure and manufacturing method and application thereof |
| CN112928452B (en) * | 2021-01-27 | 2022-04-22 | 南开大学 | Wideband spontaneous radiation enhanced tetramer metal nano antenna structure and manufacturing method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107359226A (en) | A kind of single-photon source device of high emission speed, high collection efficiency | |
| KR101448111B1 (en) | A substrate for surface-enhanced Raman scattering spectroscopy and a preparing method thereof | |
| Kress et al. | Near-field light design with colloidal quantum dots for photonics and plasmonics | |
| Abdulhalim et al. | Surface-enhanced fluorescence from metal sculptured thin films with application to biosensing in water | |
| Pillonnet et al. | Coupling distance between Eu3+ emitters and Ag nanoparticles | |
| Schietinger et al. | Plasmon-enhanced single photon emission from a nanoassembled metal− diamond hybrid structure at room temperature | |
| Ciracì et al. | Film-coupled nanoparticles by atomic layer deposition: Comparison with organic spacing layers | |
| CN102947681B (en) | Strengthen luminous automatic layout, luminous enhance device for surface | |
| US10281398B2 (en) | Lithographic systems and methods | |
| Peng et al. | Quantum dots on vertically aligned gold nanorod monolayer: plasmon enhanced fluorescence | |
| KR101097205B1 (en) | Fabrication method of substrate for surface enhanced raman scattering | |
| CN207690822U (en) | A kind of single-photon source device of high emission rate, high collection efficiency | |
| Fan et al. | Improving the performance of light-emitting diodes via plasmonic-based strategies | |
| Damm et al. | Surface enhanced luminescence and Raman scattering from ferroelectrically defined Ag nanopatterned arrays | |
| CN107075661A (en) | It is formed with substrate of multiple nano gaps and preparation method thereof | |
| Yuan et al. | Directional control and enhancement of light output of scintillators by using microlens arrays | |
| CN106847797A (en) | A kind of noble metal nano particles quantum dot array luminescent device preparation method | |
| Lunnemann et al. | Calibrating and controlling the quantum efficiency distribution of inhomogeneously broadened quantum rods by using a mirror ball | |
| CN104764732A (en) | Surface-enhanced raman scattering base on basis of special-material superabsorbers and preparation method thereof | |
| Pfeiffer et al. | Positioning plasmonic nanostructures on single quantum emitters | |
| Wang et al. | Flexible transfer of plasmonic photonic structures onto fiber tips for sensor applications in liquids | |
| US20140293280A1 (en) | Nanosilica sintered glass substrate for spectroscopy | |
| US20150197687A1 (en) | Photoluminescence-Enhanced Sandwich Structure of Luminescent Films and Method | |
| CN111007056B (en) | Broadband plasmon composite structure and preparation method thereof | |
| Reboud et al. | Spontaneous emission control of colloidal nanocrystals using nanoimprinted photonic crystals |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171117 |