CN106299066B - A kind of quantum dot single-photon source and preparation method thereof - Google Patents
A kind of quantum dot single-photon source and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of quantum dot single-photon source and preparation method thereof, is related to single-photon source field, is included in grown buffer layer in substrate, on the buffer layer alternating growth at least 4 couples of GaAs and Al0.95Ga0.05As, obtains DBR mirror layers, and the GaAs that growth n is adulterated in DBR mirror layers upper surface is as back gate；Prefabricated impression block, some bulge-structures to match with single quantum dot are provided with impression block, and the structure of nano-imprint stamp is overleaf imprinted out on grid, and are etched and the corresponding Quantum Dots Growth area of stress concentration of bulge-structure；In area's growth quantum point, active layer is obtained, grid electrode front is grown on active layer, few 4 couples of GaAs and Al are alternately grown on grid electrode front0.95Ga0.05As, obtains upper surface DBR layer, i.e. light source sample, light source sample is marked, is etched, obtains quantum dot single-photon source.The present invention can quick and precisely position the position of quantum dot, easy to industrial production.
Description
Technical field
The present invention relates to single-photon source field, and in particular to a kind of quantum dot single-photon source and preparation method thereof.
Background technology
With social progress and development, the parallel processing capability of computer is more and more stronger, especially it is super calculate it is quick into
Step, forms safely human information significant threat, while society is also higher and higher to the demand of communication security, in order to increase communication
Privacy degrees, be mainly based upon increase algorithm complexity, but this technology formed security information be to be cracked
's.
Quantum communications are that quantum theory and information theory combine the research field produced, are to utilize entangled quantum effect into row information
A kind of new communication modes transmitted, it is to realize the means of communication based on the single quantum state of light, since it is based on monochromatic light
The Quantum Properties of son, can not inherently decode, therefore, quantum communications can complete what classical communication means can not be completed
Confidentiality task, is widely used in terms of quantum cryptography communication, quantum remotely pass state and quantum dense coding.
Single-photon source is the core of quantum key communication, and the scheme that current single-photon source is mainly based upon laser attenuation obtains
Arrive, still, since the scheme based on laser attenuation is simply in theory by the energy attenuation of laser to single photon magnitude,
Obtained single-photon source can not only launch single photon when launching photon, can also launch multi-photon, meanwhile, launch photon when
Between be also random, i.e., the single-photon source that the scheme based on laser attenuation obtains is pseudo- single-photon source.
Study carefully recently and show, the single-photon source based on quantum dot, not only single photon generation efficiency is high, and modulation rate is fast, is
The technology of one great prospect.However, there are multinomial technical bottleneck in the preparation process of quantum dot single-photon source：The monochrome of spectrum
Property control, the photoluminescence Study of single quantum dot, high quality single quantum dot growth, micro-cavity quantum point coupled structure prepare, monochromatic light
The luminous efficiency of component, single photon spectrum detection technique etc..
Being currently based on the single-photon source growth of quantum dot includes the growth of quantum dot epitaxial structure and the positioning two of single quantum
Big step, in order to ensure the characteristics of luminescence of single-photon source, it is desirable to which an only quantum dot is excited in active area, therefore is preparing
Growth conditions need to be strictly controlled during quantum dot layer, it is ensured that the density of quantum dot layer is sparse enough, meanwhile, in order to increase single quantum hair
Light efficiency, couples quantum dot usually using micro-nano cavity configuration, and the prior art mainly first carries out the growth of quantum dot again
Positioning：PL (Photoluminescence, fluorescence) spectrometry is carried out to quantum dot epitaxial structure using Laser Scanning Confocal Microscope, is sought
Find PL and compose most strong position again by the template progress projection lithography of micro-nano cavity configuration.
Since the hot spot of micron dimension is larger, it is necessary to expend in the difficulty of centimetres epitaxial structure surface searching anchor point
The substantial amounts of time, limits the application of the technology in the industrial production.
The content of the invention
For defect existing in the prior art, it is an object of the invention to provide a kind of quantum dot single-photon source and its system
Preparation Method, can quick and precisely position the position of quantum dot, easy to industrial production.
To achieve the above objectives, the present invention adopts the technical scheme that：
A kind of preparation method of quantum dot single-photon source, prefabricated impression block, be provided with the impression block it is some with
The bulge-structure that single quantum dot matches, this method comprise the following steps：
S1, the grown buffer layer in substrate, on the buffer layer alternating growth at least 4 couples of GaAs and Al0.95Ga0.05As, obtains
DBR mirror layers, the GaAs that growth n is adulterated in DBR mirror layers upper surface is as back gate；
S2, the structure that nano-imprint stamp is overleaf imprinted out on grid, and etching and the corresponding microcavity of bulge-structure,
As area of stress concentration；
S3, deposit quantum dot on area of stress concentration, obtains active layer, and the GaAs layers that P doping is grown on active layer are made
For grid electrode front, replace raw at least 4 couples of GaAs and Al on grid electrode front0.95Ga0.05As, obtains the second dbr structure layer, i.e. light
Source sample, is marked light source sample, etches, obtain quantum dot single-photon source.
Based on the above technical solutions, described in step S3 on area of stress concentration growth quantum point specifically include with
Lower step：Grow n and adulterate GaAs transition zone, and In is grown in transition layer surface0.4Ga0.6As soakage layers, (growth interruption)
500 degree then are cooled to, to prevent the decomposition on surface.1.8ML (monolayer, monoatomic layer) InAs is deposited in the meantime, raw
Long speed is about 0.12nm/s, and the ratio of V/III is 0.4.Source of the gas interrupts once every 5s in growth course so that In atoms exist
Surface migration, forms quantum dot
Based on the above technical solutions, described in step S3 after area of stress concentration, before obtaining active layer, also
Comprise the following steps：
One cap layers In of growth regulation over the qds0.8-xAl0.2GaxDo not covered on As and then parsing soakage layer by the first cap layers
Region, and even up the top of quantum dot, last two cap layers In of growth regulation0.71-xAl0.29GaxAs obtains active layer.
Based on the above technical solutions, the thickness of first cap layers is 0.2nm, and the thickness of second cap layers is small
In equal to 30nm.
Based on the above technical solutions, light source sample is marked described in step S3, etched, obtain quantum dot
Single-photon source specifically includes following steps：
One layer of SiO is grown in light source sample surfaces2Layer, light source sample is defined into using the method for ultraviolet photolithographic by micro-cavity structure
Product surface；Etching removes SiO2Layer, afterwards successively performs etching light source sample from top to bottom, and etching depth is to as little as active
Layer bottom, is deposited one layer of SiO again2, the position of single electrode is exposed using ultraviolet exposure machine, develops, etch one by one
Define all electrodes.
Based on the above technical solutions, it is small to be provided with some diameters for the central area of impression block described in step S2
In the cylinder equal to 50nm, highly less than or equal to 20nm, the cylinder is the bulge-structure to match with single quantum dot.
Based on the above technical solutions, the thickness of the cushion is more than or equal to 50nm.
Based on the above technical solutions, the thickness of the back gate and grid electrode front with DBR mirror layers
Any one layer of GaAs thickness is identical.
A kind of quantum dot single-photon source, from bottom to top successively include substrate, cushion, DBR mirror layers, back gate,
Active layer, grid electrode front and the second dbr structure layer, have single quantum dot in the active layer, and are set on single-photon source body
There are two electrodes, an electrode is connected with back gate, and another electrode is connected with grid electrode front, as positive and negative electrode, with single-photon source sheet
Body other parts form a complete circuit, and part corresponding with quantum dot is provided with one on single-photon source body as conductor
Micro-cavity structure.
Based on the above technical solutions, substrate selects III-V compounds of group such as GaAs or indium phosphide, and cushion is
GaAs。
Compared with prior art, the advantage of the invention is that：
(1) present invention in quantum dot single-photon source preparation method, first in substrate mark output son point growth site,
The aperture of nanometer scale is printed off on substrate according to the position of telltale mark, then carries out the growth of quantum dot again, and in life
Growth temperature, since the stress distribution in the high mobility and hole of In atoms is more big, quantum dot are strictly controlled in growth process
Island structure is mostly distributed in aperture, finally according to alignment mark by the Template Location of micro-nano chamber in sample surfaces, this is not only
The quantum dot epitaxial layer of higher quality is realized, also simplify the technological process that single quantum dot is coupled with microcavity, with the prior art
The middle growth repositioning for first carrying out quantum dot, carries out PL spectrometrys to quantum dot epitaxial structure using Laser Scanning Confocal Microscope, finds
Most strong position being composed to PL the template of micro-nano cavity configuration being subjected to projection lithography again and compared, the present invention being capable of quick and precisely positioning amount
The position of son point, easy to mass production.
(2) present invention in quantum dot single-photon source preparation method, its quantum dot be based on self assembly method growth, energy
It is convenient to carry out mass production, the efficiency of quantum dot single-photon source is effectively improved, simplifies technological process, and it is using the present invention
The second order coherence for the single-photon source that method obtains is less than 0.1, and the collection efficiency of single photon is more than 20%.
Brief description of the drawings
Fig. 1 is the structure diagram of quantum dot single-photon source in the embodiment of the present invention；
Fig. 2 is the flow chart for the growth position that quantum dot is determined in the embodiment of the present invention.
In figure：1- substrates, 2- cushions, 3-DBR mirror layers, 4- back gates, 5- active layers, 6- grid electrode fronts, 7-
Second dbr structure layer, 8- electrodes, 9- single-photon source bodies, 10- micro-cavity structures, 11- Quantum Dots Growths region, 12- stress concentrations
Area.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and embodiments.
Shown in Figure 1, the embodiment of the present invention provides a kind of quantum dot single-photon source, including includes base successively from bottom to top
Bottom 1, cushion 2, DBR mirror layers 3, back gate 4, active layer 5,6 and second dbr structure layer 7 of grid electrode front, active layer 5
In have single quantum dot, and two electrodes 8 are provided with single-photon source body 9, an electrode 8 is connected with back gate 4, another electrode
8 are connected with grid electrode front 6, as positive and negative electrode, using 9 other parts of single-photon source body as conductor, form a complete electricity
Road, and part corresponding with quantum dot is provided with a micro-cavity structure 10 on single-photon source body 9.
The present invention also provides a kind of preparation method of quantum dot single-photon source, comprise the following steps：
S1, using the method for beamwriter lithography prepare nano-imprint stamp, and the central area of the template is provided with some straight
Footpath is less than or equal to 50nm, is highly less than or equal to the cylinder of 20nm, and the arrangement period of cylinder is 50um*50um.
In actually preparing, the diameter and height of cylinder can make choice as needed, in the present embodiment, cylinder
A diameter of 25nm, be highly 5nm.
Alignment mark is defined on the base 1：One layer of photoresist first is applied on the surface of substrate 1, is carried out using ultraviolet exposure machine
Exposure, develops afterwards, etches, and etching depth is more than 1um.
S2, in pressure be 90~110mBar, and under conditions of temperature is 550~650 DEG C, growth thickness is big on the base 1
In the cushion 2 equal to 50nm, to reduce the lattice defect of wafer surface.
In actual production, the pressure and temperature of reaction are set according to actual needs, reaction pressure 100mBar,
Temperature is 600 DEG C, and the thickness of cushion 2 is 60nm, and substrate 1 selects III-V compounds of group such as GaAs or indium phosphide, cushion
2 be GaAs.
S3, upper surface alternating growth at least 4 couples of GaAs and Al in GaAs cushions 20.95Ga0.05As, obtains DBR (Bradleys
Lattice reflection-type) mirror layer 3.In the present embodiment, GaAs and Al0.95Ga0.05As is 32 pairs.
S4, DBR mirror layers 3 upper surface growth thickness it is identical with GaAs thickness in DBR mirror layers 3, n doping
GaAs layers are used as back gate 4.
It is S5, shown in Figure 2, use uv-exposure method overleaf 4 surface alignment mark Quantum Dots Growth region of grid, base
In the region of alignment mark, using the method for nano impression, the structure of nano-imprint stamp is overleaf imprinted out on grid 4, is marked
Remember and quantum dot growth district 11, then performed etching using plasma etching method, the depth of etching is 5nm~10nm, is made
Obtain and form some area of stress concentration 12 on back gate 4.
The n doping GaAs (n in the present embodiment of S6,4 surface growth thickness of back gate after etching less than or equal to 10nm
The thickness for adulterating GaAs is 5nm), as transition zone, 4 surface defect of back gate and lattice caused by reduce in etching process
Damage.
S7, the In that 2nm is first grown in transition layer surface0.4Ga0.6As soakage layers；Then in TBA (the group-v element tert-butyl groups
Arsenic) temperature is reduced to not less than 480 DEG C in atmosphere, prevent soakage layer from decomposing, (growth interruption) 1.8ML (monolayer, it is single
Atomic layer) InAs deposits in the meantime, and growth rate is about 0.12nm/s, and the ratio of V/III is 0.4.Source of the gas in growth course
Interrupted once every 5s so that In atoms are in surface migration, formation quantum dot.
S8, temperature be 500 DEG C under conditions of, over the qds growth thickness be 0.2nm the first cap layers In0.8- xAl0.2GaxAs；600 DEG C are then heated to, parses the region not covered on soakage layer by the first cap layers, and even up the top of quantum dot
End；Last growth thickness is less than or equal to the second cap layers In of 30nm0.71-xAl0.29GaxAs (in the present embodiment, the thickness of the second cap layers
Spend for 20nm), obtain active layer 5.
S9, growth thickness is identical with negative grid on active layer 5, the GaAs layers of P doping, as grid electrode front 6.
S10, alternating growth is more than or equal to 4 couples of GaAs and Al on grid electrode front 60.95Ga0.05As, obtains the second dbr structure
Layer 7, i.e. light source sample (in the present embodiment, GaAs and Al0.95Ga0.05The logarithm of As is 24 pairs).
S11, use PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhancing
Chemical vapour deposition technique) light source sample surfaces grow a layer thickness be 1um SiO2Layer, and one layer of S1805 photoresist of spin coating.
The structure (cylindrical structure i.e. on nano-imprint stamp) of microcavity is defined into light source sample table using the method for ultraviolet photolithographic
Face.
S12, use silica etching liquid BOE (Buffered Oxide Etchant, buffered oxide etchant) etchings
Fall the SiO on surface2Layer, afterwards successively carries out light source sample ICP etchings (sense coupling) from top to bottom, and
Etching depth can etch into substrate 1, obtain single-photon source body semi-finished product at least to 5 bottom of active layer.
S13, use the original remaining SiO of BOE generals2Layer is etched away and washed, and it is 1um that a layer thickness is then deposited again
SiO2, and spin coating last layer S1805, alignment mark during using ultraviolet exposure machine based on nano impression carry out overall exposing,
Development, etching.
S14, clean the single-photon source body semi-finished product after definition using isopropanol and acetone, and in single-photon source body half
One layer of LOR (glue for being lift-off) is coated on finished product, first electrode 8 is defined, sample is exposed, is developed, uses electricity
Ti/Pt/Au alloys are deposited in beamlet, then carry out lift-off techniques, after obtaining another electrode 8, repeated exposure, development, make
With the operation of electron beam evaporation plating Ti/Pt/Au alloys.Obtain some single-photon source bodies 9, and to all single-photon source bodies 9 into
The corresponding test of row.
The present invention is not limited to the above-described embodiments, for those skilled in the art, is not departing from
On the premise of the principle of the invention, some improvements and modifications can also be made, these improvements and modifications are also considered as the protection of the present invention
Within the scope of.The content not being described in detail in this specification belongs to the prior art known to professional and technical personnel in the field.
Claims (9)
1. a kind of preparation method of quantum dot single-photon source, it is characterised in that prefabricated impression block, is set on the impression block
There are some bulge-structures to match with single quantum dot, this method comprises the following steps：
S1, the grown buffer layer (2) in substrate (1), alternately grown on cushion (2) few 4 couples of GaAs and
Al0.95Ga0.05As, obtains DBR mirror layers (3), and the GaAs that growth n is adulterated in DBR mirror layers (3) upper surface is as the back side
Grid (4)；
The structure of nano-imprint stamp, and etching and the corresponding microcavity of bulge-structure are imprinted out on S2, overleaf grid (4),
As area of stress concentration (12)；
S3, the growth quantum point on area of stress concentration (12), obtain active layer (5), and P doping is grown on active layer (5)
GaAs layers are used as grid electrode front (6), and few 4 couples of GaAs and Al are alternately grown on grid electrode front (6)0.95Ga0.05As, obtains
Two dbr structure layers (7), i.e. light source sample, are marked light source sample, etch, and obtain quantum dot single-photon source, described to light
Source sample is marked, etches, and obtains quantum dot single-photon source and specifically includes following steps：
One layer SiO2 layers are grown in light source sample surfaces, micro-cavity structure is defined into light source sample table using the method for ultraviolet photolithographic
Face；Etching removes SiO2 layers, and light source sample is successively performed etching from top to bottom afterwards, and etching depth is to as little as active layer
(5) bottom, is deposited one layer of SiO2, the position of single electrode (8) is exposed using ultraviolet exposure machine, develops, etch again
All electrodes (8) are defined one by one.
A kind of 2. preparation method of quantum dot single-photon source as claimed in claim 1, it is characterised in that：Described in step S3
Growth quantum point specifically includes following steps on area of stress concentration (12)：Grow n and adulterate GaAs transition zone, and in transition zone
Surface grows In0.4Ga0.6As soakage layers, are cooled to 500 degree after growth interruption, to prevent the decomposition on surface；The InAs of 1.8ML exists
Deposited during this, growth rate is about 0.12nm/s, and the ratio of V/III is 0.4, and source of the gas interrupts one every 5s in growth course
It is secondary so that In atoms are in surface migration, formation quantum dot
A kind of 3. preparation method of quantum dot single-photon source as claimed in claim 1, it is characterised in that：Described in step S3
It is further comprising the steps of before obtaining active layer (5) on area of stress concentration (12) after growth quantum point：
One cap layers In of growth regulation over the qds0.8-xAl0.2GaxAs then parsing soakage layer on not by the first cap layers cover area
Domain, and the top of quantum dot is evened up, last two cap layers In of growth regulation0.71-xAl0.29GaxAs obtains active layer (5).
A kind of 4. preparation method of quantum dot single-photon source as claimed in claim 3, it is characterised in that：First cap layers
Thickness is 0.2nm, and the thickness of second cap layers is less than or equal to 30nm.
A kind of 5. preparation method of quantum dot single-photon source according to any one of claims 1 to 4, it is characterised in that：Step
The central area of impression block is provided with the cylinder that some diameters are less than or equal to 20nm less than or equal to 50nm, highly described in rapid S2
Body, the cylinder are the bulge-structure to match with single quantum dot.
A kind of 6. preparation method of quantum dot single-photon source according to any one of claims 1 to 4, it is characterised in that：Institute
The thickness for stating cushion (2) is more than or equal to 50nm.
A kind of 7. preparation method of quantum dot single-photon source according to any one of claims 1 to 4, it is characterised in that：Institute
The thickness for stating back gate (4) and grid electrode front (6) is identical with any one layer of GaAs thickness in DBR mirror layers (3).
A kind of 8. quantum dot single-photon source prepared using any one of claim 1 to 7 method, it is characterised in that：From lower and
On successively include substrate (1), cushion (2), DBR mirror layers (3), back gate (4), active layer (5), grid electrode front (6)
With the second dbr structure layer (7), there is single quantum dot in the active layer (5), and two electricity are provided with single-photon source body (9)
Pole (8), an electrode (8) are connected with back gate (4), and another electrode (8) is connected with grid electrode front (6), as positive and negative electrode, with
Single-photon source body (9) other parts form a complete circuit as conductor, and on single-photon source body (9) and quantum dot
Corresponding part is provided with a micro-cavity structure (10).
9. quantum dot single-photon source as claimed in claim 8, it is characterised in that：The substrate (1) selects GaAs or phosphatization
III-V compounds of group such as indium, cushion (2) are GaAs.
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| CN110088910B (en) * | 2017-11-07 | 2021-01-15 | 华为技术有限公司 | Optical waveguide, single photon source and method for manufacturing optical waveguide |
| WO2019217798A1 (en) * | 2018-05-11 | 2019-11-14 | The Regents Of The University Of California | Epitaxial growth on a gallium arsenide phosphide capped material on a gallium arsenide substrate |
| CN109713094B (en) * | 2018-11-27 | 2020-07-17 | 中国科学院微电子研究所 | Preparation method of single photon light source and component |
| RU189453U1 (en) * | 2019-03-13 | 2019-05-22 | Российская Федерация, от имени которой выступает ФОНД ПЕРСПЕКТИВНЫХ ИССЛЕДОВАНИЙ | Single-photon radiation source based on an LED emitting heterostructure with epitaxial semiconductor QDs in an InAs / AlGaAs system manufactured by the MPE method |
| CN111261761B (en) * | 2020-01-31 | 2021-03-23 | 清华大学 | Pseudo single photon source and preparation method |
| RU199159U1 (en) * | 2020-02-21 | 2020-08-19 | федеральное государственное автономное образовательное учреждение высшего образования "Южный федеральный университет" (Южный федеральный университет) | SINGLE-PHOTON RADIATOR BASED ON A SINGLE QUANTUM DOT |
| CN111403567B (en) * | 2020-04-01 | 2021-05-14 | 中国科学院半导体研究所 | Quantum dot single photon source and wet etching preparation method of microlens array thereof |
| CN111884046B (en) * | 2020-07-06 | 2021-11-09 | 武汉光谷量子技术有限公司 | Distributed Bragg reflector and manufacturing method and design method thereof |
| CN113013299B (en) * | 2021-01-27 | 2022-04-12 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and growth method thereof |
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