CN104538842A - Quantum dot embedded integrated micro-cavity monochromatic light source array - Google Patents
Quantum dot embedded integrated micro-cavity monochromatic light source array Download PDFInfo
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Abstract
The invention discloses a quantum dot embedded integrated micro-cavity monochromatic light source array which comprises a substrate, a high quality factor optical micro-cavity array firmly combined with the substrate, quantum dots embedded in the optical micro-cavity array, an excitation light source and a long-wave-pass or band-pass optical filter arranged on the back side of the substrate and firmly combined with the substrate. According to the monochromatic light source array, frequency selection is carried out on light emitting of the quantum dots through a series of resonance cavities of different cavity lengths, and accordingly arrays of different wavelengths corresponding to monochromatic light in different space positions are formed and are small, the size and the shape of each wavelength light source unit can be designed at will, and monochromaticity is good. When a medium optical micro-cavity is adopted, material selection can not be limited by quantum dot lattice matching, quality factors can be very high and can even form single-photo sources or laser arrays of different wavelengths, and the quantum dot embedded integrated micro-cavity monochromatic light source array has important application value in the fields of quantum communication, micro spectrographs and the like.
Description
Technical field
The present invention relates to a kind of illuminating source, be specifically related to a kind of quantum dot embedding integrated microcavity monochromatic source array.
Background technology
Conventional monochromatic source is generally formed after monochromator splitting by the white light source such as Halogen lamp LED, white light LEDs, monochromator is usually bulky, greatly limit the size of light source, therefore cannot meet if micro spectrometer, micro projector etc. are to the demand of miniature monochromatic source.
If monochromatic source is in height sub-Poissionian distribution shape, and launches in a time interval and only comprise a photon, be then called single-photon source.Single-photon source be realize single photon quantum bit, photon quantum key transmissions, light quantum calculate and the key components of quantum network, high performance single-photon source contributes to the manipulation realizing monochromatic light quantum state, build quantum cryptography net and quantum computer, brand-new change will be brought to the mankind to the transmission of information and process.Now used under study for action single-photon light source coherent optical pulse is decayed to average each pulse to only have 0.1,0.2 photon, but this is a kind of approximate single-photon source, its efficiency is low, and likely there are two photons in a pulse in this light source simultaneously, therefore the transmission range of not only influence amount sub-key, and affect its fail safe and reliability.Therefore another critical problem that real single-photon source becomes quantum cryptography research is developed.
Optical microcavity is a kind of optical resonator that light field can be limited in micro-nano magnitude domain.Its utilizes at the reflection of the discontinuous material interface of dielectric constant, scattering or diffraction, light energy is limited in oscillate in very little region, thus increases photon lifetime, reduces light field model number.Quantum dot is the nanometer semiconductor structure that conduction band electron, valence band hole and exciton are held onto on three direction in spaces, has wide excitation spectrum and narrow emission spectra, and its emission spectrum can be controlled by the size changing quantum dot.When the quantum dot with certain size distribution is placed in microcavity, the excitonic luminescence of quantum dot is subject to the modulation of optical microcavity, therefore produces the laser of Low threshold, forms monochromatic source.When adopting the microcavity of very narrow bandwidth, just the single-photon source with higher oscillator strength and narrower breadth of spectrum line may be obtained due to pattern matching and frequency-selecting effect.Although the existing relevant report of this class formation, there is no report by the monochromatic source array structure that a series of different wave length monochromatic light single-chip integration gets up.
Summary of the invention
The object of the invention is to propose a kind of quantum dot embedding integrated microcavity monochromatic source array, meet some special constructions, special occasions in integrated monochromatic source, the application demand of even integrated single-photon source aspect, solves the difficult problem that monochromatic source (even single-photon source) cannot be integrated.
Quantum dot embedding of the present invention integrated microcavity monochromatic source array, the high-quality-factor optical microcavity array 2 with substrate strong bonded is followed successively by from down to up in substrate 1 front, be embedded in the quantum dot 3 in the middle of optical microcavity array resonant cavity layer, quantum dot excitation source 4, at substrate back is and the long-pass of substrate strong bonded or bandpass filter 5.
Said high-quality-factor optical microcavity array 2 by the lower membrane be arranged in order be 201, resonant cavity array 202 and upper layer film system 203 form, array=p × q, wherein p is the horizontal microcavity number of array, and q is the longitudinal microcavity number of array.The film of described high-quality-factor optical microcavity array 2 is (LH)
mxL (HL)
m.Wherein, (LH)
mfor lower membrane system, xL is resonant cavity tunic system, (HL)
mfor upper layer film system, H is optical thickness (nd) is λ
0the high refractive index layer of/4, L is λ for being optical thickness (nd)
0the low-index film of/4, x is the number of plies of low-index film, and m is the alternative stacked number of times of high refractive index layer and low-index film.High and low refractive index film material is semiconductor or the dielectric material of vacuum coating or the growth of magnetron sputtering membrane process;
Said quantum dot 3 is graphene quantum dot, MoS
2quantum dot, CdSe quantum dot, CdS quantum dot or ZnO quantum dot.
Said excitation source 4 is laser diode or light-emitting diode, and its emission wavelength is the excitation wavelength of adopted quantum dot.
The film system expression formula of said long-pass or bandpass filter 5 is (0.5HL0.5H)
kor LHLHHLHL, wherein H is optical thickness (nd) is λ
0the high refractive index layer of/4, L is optical thickness (nd) is λ
0the low-index film of/4, k is the number of times of high refractive index layer and low-index film alternative stacked, λ
0for designing the centre wavelength of initial long-pass or bandpass filter film system.
The operation principle of quantum dot embedding of the present invention integrated microcavity monochromatic source array is: excitation source 4 is incident from quantum dot embedding microcavity one end, because quantum dot 3 has certain distribution of sizes, the light that width is tens certain wave bands of nanometer can be sent under the exciting of excitation source 4, and optical microcavity array 2 can be modulated quantum dot light emitting, the monochromatic wavelength that different Resonant Intake System microcavity emission goes out is also different, form array, just the light in this wave band spatially can be divided into the monochromatic light of some bundle different wave lengths.The band of optical microcavity is logical narrower, divide the monochromaticjty of bright dipping higher.When the band of optical microcavity is logical be too narrow to a certain degree time, just may obtain the single photon luminescence with higher oscillator strength and narrower breadth of spectrum line due to the pattern matching of microcavity and frequency-selecting effect.Again through substrate back long-pass or bandpass filter 5, exciting light beyond elimination monochromatic light scope and other stray lights, eliminate the interference of excitation source and other stray lights, just can obtain the good monochromatic source of monochromaticjty (even single-photon source) array at the other end.
Advantage of the present invention is:
1, be embedded into by integrated microcavity the single-chip integration that quantum dot realizes different wave length monochromatic source array, device volume be little, integrated level is high, monochromaticjty is good, preparation technology and semiconductor technology compatible, can mate with detector array or integrated formation micro spectrometer.
2, adopt medium to construct optical microcavity, the manufacture craft of microcavity is separated with the manufacture craft of quantum dot, can single optimization, obtains the optical microcavity of more high-quality-factor;
3, Quantum Dots Growth and microcavity preparation technology are separated by the present invention, and quantum dot embedding in microcavity, is subject to the restriction of crystalline substrates, can be embedded into all kinds quantum dot by employing spin coating method unlike semi-conductor tiny cavity;
4, the size and shape of monochromatic source unit and array can design arbitrarily as requested.
Accompanying drawing explanation
Fig. 1 is the schematic cross-section of the integrated microcavity light source array structure of quantum dot embedding.
Fig. 2 is the integrated microcavity array enlarged section being embedded with quantum dot.
Fig. 3 is preparation technology's flow chart of the integrated microcavity array of source of quantum dot embedding.
Fig. 4 is the luminescent spectrum figure of prepared graphene quantum dot in embodiment 1, and illustration is quantum dot size distribution map.
Fig. 5 is through the transmission spectrum (solid line) of the filtered each microcavity unit of 8 × 4 high-quality-factor optical microcavity array and the luminescent spectrum figure (dotted line) of graphene quantum dot in embodiment 1.
The transmission spectrum of the high-quality-factor microcavity unit of Fig. 6 prepared by embodiment 1.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is elaborated:
As shown in Figure 1, quantum dot embedding of the present invention integrated microcavity monochromatic source array, the high-quality-factor optical microcavity array 2 with substrate strong bonded is followed successively by from down to up in substrate 1 front, be embedded in the quantum dot 3 in the middle of optical microcavity array resonant cavity layer, quantum dot excitation source 4, at substrate back is and the long-pass of substrate strong bonded or bandpass filter 5.
The concrete preparation process of quantum dot embedding of the present invention integrated microcavity monochromatic source array is as follows:
First, corresponding Medium Optics microcavity array is designed according to the luminescence band intending being embedded into quantum dot.The method combining etching after adopting combination plated film or plated film coats the latter half resonant cavity array of lower reflectance coating system and a series of different length by evaporation, sputtering method; Again the quantum such as Graphene, molybdenum bisuphide spot printing is overlayed on optical microcavity array; Then, continue to be coated with remaining the first half resonant cavity layer array and upper reflectance coating system, by quantum dot embedding in optical microcavity array; Long logical or bandpass filter is coated with as required again at substrate back; Finally, according to the excitation wavelength selective exitation light source of quantum dot, excitation source and whole device are assembled together, complete the preparation of the integrated monochromatic source array of quantum dot embedding microcavity.
Embodiment 1:
1, the graphene quantum dot with certain size distribution is prepared by ordinary graphite alkene quantum dot preparation method.Concrete preparation technology is: by graphene oxide powder dispersion in dinethylformamide, ultrasonicly transfer in reactor, react 5 ~ 20 hours under 150 ~ 300 DEG C of conditions, after reaction, get supernatant liquor, carry out revolving evaporate to dryness dry, thus obtain dry graphene quantum dot.Carry out two step Gradient column chromatographies to the graphene quantum dot of drying, can obtain green fluorescence graphene quantum dot, see patent of invention: 201210421532.3, its luminescent spectrum and distribution of sizes are as shown in Figure 4.
2, according to the luminescent spectrum of quantum dot as shown in Figure 4, an optical microcavity film system is designed with its luminescence center, 400nm-630nm in require the band of film system to lead to light-emitting zone that peak position is all distributed in quantum dot.The film system of the optical microcavity array that the present embodiment adopts is as follows:
(LH)
mxL(HL)
m
Wherein, (LH)
mfor lower membrane system, xL is resonant cavity layer, (HL)
mfor upper layer film system, the TiO of H to be optical thickness be 1/4 centre wavelength
2high refractive index layer, the SiO of L to be optical thickness be 1/4 centre wavelength
2low-index film, x is the number of plies of low-index film, and m is the alternative stacked number of times of high refractive index layer and low-index film, and the present embodiment m gets 7, x and gets 3.46-4.08.As shown in Figure 6, its half-peak breadth is about 0.2nm to the transmission spectrum of designed optical microcavity unit, and quality factor is up to 2675.Optical microcavity array transmission peak position is from 494.9nm-541.1nm.
3, as shown in Fig. 3 (a) ~ (b), substrate adopts evaporation coating method be coated with successively lower membrane be 201 and thickness be the latter half resonant cavity layer of 2.04L.Then plated film is stopped, the sample of the lower membrane system of having plated and partial resonance cavity layer is taken out, ion etching process subregion conventional in semiconductor technology is adopted to carry out the cover etching of 5 different-thickness, form the latter half resonant cavity layer 8 × 4 array 2022 that 32 thickness do not wait, see patent of invention: 200310108346.5.In the latter half resonant cavity layer array 2022, minimum resonant cavity layer thickness is 1.73L, and maximum resonance cavity layer thickness is 2.35L, and the x value of each filter unit is successively decreased with 0.02, as shown in Fig. 3 (c).Then on this basis by concentration lower than the quantum dot solution of n mol/L by even glue, spraying, the means such as brush or dip and be coated on above-mentioned rete and obtain quantum dot layer 3, as shown in Fig. 3 (d).After solvent evaporates, the first half resonant cavity layer array 2021 and remaining upper layer film system 203 that remaining thickness is 1.73L will be coated with successively again, forming 32 only has resonant cavity layer thickness different, the identical quantum dot embedding optical microcavity array of other film system, as shown in Fig. 3 (e).
4, according to the luminescent spectrum of graphene quantum dot, the bypass belt peak position of optical microcavity array and quantum dot light emitting scope, design a bandpass filter, make its can filter narrow band pass filter bypass within the scope of quantum dot light emitting through peak or excitation source luminous.The present embodiment adopts long wave pass filter, and its Ranvier's membrane system is as follows:
(0.5LH0.5L)
K
Wherein, H is TiO
2high refractive index layer, L is SiO
2low-index film, thicknesses of layers is the centre wavelength of 1/4, and k is high refractive index layer and low-index film alternative stacked number of times, and the present embodiment k gets 10, and centre wavelength gets 400nm.
Adopt evaporation coating method to be coated with long wave pass filter film system 5 at substrate 1 back side, through the filtered optical microcavity array of long wave pass filter through spectrum as shown in Figure 5.
5, on optical microcavity 2, stick emission wavelength is that the laser diode 4 of 416nm is as excitation source, difference extraction electrode on the electrode of diode, as long as energising, just can obtain 32 different wave length high-quality monochromatic light, complete the preparation of the integrated monochromatic source array of quantum dot embedding microcavity.
Claims (1)
1. a quantum dot embedding integrated microcavity monochromatic source array, its structure is: be followed successively by the high-quality-factor optical microcavity array (2) with substrate strong bonded from down to up in substrate (1) front, be embedded in the quantum dot (3) in the middle of optical microcavity array resonant cavity layer, quantum dot excitation source (4), at substrate back is and the long-pass of substrate strong bonded or bandpass filter (5); It is characterized in that:
The material of described substrate (1) is fused silica glass, K
9glass, ZK
6glass, BAK Glass optical glass, jewel or silicon chip, germanium wafer;
The film of described high-quality-factor optical microcavity array (2) is (LH)
mxL (HL)
m, wherein, (LH)
mfor lower membrane system, xL is resonant cavity tunic system, (HL)
mfor upper layer film system, H is optical thickness λ
0the high refractive index layer of/4, L is optical thickness λ
0the low-index film of/4, x is the low-index film number of plies, and m is the alternative stacked number of times of high refractive index layer and low-index film, λ
0centered by wavelength, high and low refractive index film material be applicable to vacuum coating or magnetron sputtering membrane process growth semiconductor or dielectric material;
Described quantum dot (3) is embedded in the middle of resonant cavity layer (202), and material is graphene quantum dot, MoS
2quantum dot, CdSe quantum dot, CdS quantum dot or ZnO quantum dot;
Described quantum dot excitation source (4) is laser diode or light-emitting diode, and emission wavelength is the excitation wavelength of adopted quantum dot;
The film system expression formula of described long-pass or bandpass filter (5) is (0.5HL0.5H)
kor LHLHHLHL, wherein H is optical thickness λ
0the high refractive index layer of/4, L is optical thickness λ
0the low-index film of/4, k is the number of times of high refractive index layer and low-index film alternative stacked, λ
0for designing the centre wavelength of initial long-pass or bandpass filter film system, high and low refractive index film material is the dielectric material being applicable to vacuum coating or the growth of magnetron sputtering membrane process.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106299066A (en) * | 2016-08-31 | 2017-01-04 | 武汉光谷量子技术有限公司 | A kind of quantum dot single-photon source and preparation method thereof |
| US10281637B2 (en) | 2017-01-16 | 2019-05-07 | Au Optronics Corporation | Pixel structure comprising a wavelength conversion layer and a light collimating layer having a reflection part and a transmission part and display panel having the same |
| CN110044846A (en) * | 2019-03-29 | 2019-07-23 | 中国科学院上海技术物理研究所 | A kind of low-dimensional materials detecting refractive index sample and measuring method based on optical microcavity |
| CN111244755A (en) * | 2020-01-17 | 2020-06-05 | 中国科学院上海技术物理研究所 | Infrared laser with medium optical microcavity embedded with black phosphorus and preparation method thereof |
| CN111562004A (en) * | 2020-04-23 | 2020-08-21 | 中国科学院上海技术物理研究所 | Quantum dot light source chip spectrometer without light splitting system and spectrum reconstruction method |
| CN113670441A (en) * | 2021-08-11 | 2021-11-19 | 中国科学院光电技术研究所 | Long-wave infrared multispectral imaging device based on filter array and design method thereof |
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| CN1702926A (en) * | 2005-04-21 | 2005-11-30 | 中国科学院上海技术物理研究所 | Mini single-photon light source |
| CN102876327A (en) * | 2012-10-29 | 2013-01-16 | 吉林大学 | Method for preparing graphene quantum dots with controllable fluorescence color by chemical modification |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106299066A (en) * | 2016-08-31 | 2017-01-04 | 武汉光谷量子技术有限公司 | A kind of quantum dot single-photon source and preparation method thereof |
| CN106299066B (en) * | 2016-08-31 | 2018-04-13 | 武汉光谷量子技术有限公司 | A kind of quantum dot single-photon source and preparation method thereof |
| US10281637B2 (en) | 2017-01-16 | 2019-05-07 | Au Optronics Corporation | Pixel structure comprising a wavelength conversion layer and a light collimating layer having a reflection part and a transmission part and display panel having the same |
| CN110044846A (en) * | 2019-03-29 | 2019-07-23 | 中国科学院上海技术物理研究所 | A kind of low-dimensional materials detecting refractive index sample and measuring method based on optical microcavity |
| CN111244755A (en) * | 2020-01-17 | 2020-06-05 | 中国科学院上海技术物理研究所 | Infrared laser with medium optical microcavity embedded with black phosphorus and preparation method thereof |
| CN111562004A (en) * | 2020-04-23 | 2020-08-21 | 中国科学院上海技术物理研究所 | Quantum dot light source chip spectrometer without light splitting system and spectrum reconstruction method |
| CN111562004B (en) * | 2020-04-23 | 2022-12-30 | 中国科学院上海技术物理研究所 | Quantum dot light source chip spectrometer without light splitting system and spectrum reconstruction method |
| CN113670441A (en) * | 2021-08-11 | 2021-11-19 | 中国科学院光电技术研究所 | Long-wave infrared multispectral imaging device based on filter array and design method thereof |
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Application publication date: 20150422 |