CN111710800A - Display panel and preparation method thereof - Google Patents
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- CN111710800A CN111710800A CN202010626617.XA CN202010626617A CN111710800A CN 111710800 A CN111710800 A CN 111710800A CN 202010626617 A CN202010626617 A CN 202010626617A CN 111710800 A CN111710800 A CN 111710800A
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- 239000002096 quantum dot Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
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- 238000002310 reflectometry Methods 0.000 abstract description 14
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- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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Abstract
The invention discloses a display panel and a preparation method thereof, wherein the display panel comprises: a substrate base plate; the pixel definition layer is arranged on the substrate base plate and is provided with a plurality of openings; the red light-emitting unit and the green light-emitting unit are respectively arranged in the plurality of openings; the first distributed Bragg reflection layer is arranged on the pixel defining layer; and a blue light emitting layer disposed on the first distributed Bragg reflection layer. According to the invention, the distributed Bragg reflection layer is added in the display panel, and as the distributed Bragg reflection layer has higher transmissivity and lower reflectivity for blue light and lower transmissivity and higher reflectivity for red light and green light, the blue light can be selectively transmitted, and the reversely emitted red light and green light are led out, so that the brightness of the display panel is improved; the distributed Bragg reflection layer has the characteristic of isolating water and oxygen, so that the stability and the service life of the display panel are improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display panel and a preparation method of the display panel.
Background
With the explosion of display technology, high color gamut has become an important development direction. The high color gamut means that the display picture has more colorful colors and stronger color display capability. Quantum Dot (QD) -Organic Light-Emitting Diode (OLED) display technology belongs to innovation semiconductor nanocrystal technique, can accurately carry Light, and the high efficiency promotes the colour gamut value and the visual angle of display screen, makes the color purer bright-colored, makes the color performance have more tension. The display adopting the technology can generate dynamic colors with wider color gamut range, can display real color plates in image quality, and exceeds the backlight technology in the traditional sense.
Quantum dots are semiconductor particles of nanometer diameter that excite light of a characteristic wavelength in the presence of an electric field or light. The quantum dots may emit red, green, or blue light by adjusting the particle diameter of the quantum dots. The quantum dot has the characteristics of narrow light-emitting spectrum and high color saturation, can be used as a light conversion layer to be applied to an OLED (organic light emitting diode) or a Micro LED (Micro LED), and solves the problems of low full-color yield of the OLED and difficult full-color of the Micro LED. However, the quantum dot light conversion efficiency is not high, resulting in darker display brightness.
In summary, the current display panel has the technical problem that the overall brightness of the display panel is darker due to low light conversion efficiency of quantum dot light.
Disclosure of Invention
The embodiment of the invention provides a display panel and a preparation method of the display panel, which are used for solving the technical problems that the conventional display panel is low in light conversion efficiency of quantum dot light and the whole brightness of the display panel is relatively low.
To solve the above problem, in a first aspect, the present invention provides a display panel including:
a substrate base plate;
the pixel definition layer is arranged on one side surface of the substrate base plate and is provided with a plurality of openings;
the red light-emitting unit and the green light-emitting unit are respectively arranged in the plurality of openings;
the first distributed Bragg reflection layer is arranged on the surface of one side, away from the substrate, of the pixel definition layer; and
and the blue light emitting layer is arranged on the surface of one side of the first distributed Bragg reflection layer far away from the pixel defining layer.
In some embodiments of the present invention, the led further includes a second distributed bragg reflector, and at least one second distributed bragg reflector is disposed in each of the red light emitting unit and the green light emitting unit.
In some embodiments of the present invention, the number of the second distributed bragg reflectors disposed in each of the red light emitting unit and the green light emitting unit is plural, and each of the second distributed bragg reflectors is disposed at intervals in the red light emitting unit and the green light emitting unit.
In some embodiments of the present invention, the first distributed bragg reflector layer or the second distributed bragg reflector layer is a stack of multiple organic or inorganic film layers, and refractive indices of adjacent film layers are different.
In some embodiments of the present invention, the first distributed bragg reflector layer and the second distributed bragg reflector layer have a reflectivity for light having a wavelength of 400nm to 480nm that is less than a reflectivity for light having a wavelength of 500nm to 660 nm.
In some embodiments of the present invention, a material of the first distributed bragg reflector layer or the second distributed bragg reflector layer includes silicon oxide or silicon nitride, and a planarization layer is disposed between one of the first distributed bragg reflector layer or the second distributed bragg reflector layer and one of the red light emitting unit or the green light emitting unit.
In some embodiments of the present invention, the red light emitting unit and the green light emitting unit are doped with a quantum dot light emitting material.
In a second aspect, the present invention provides a method for manufacturing a display panel, the method being used for manufacturing the display panel according to any one of the first aspect, including the steps of:
preparing a pixel defining layer on a substrate, wherein the pixel defining layer is provided with a plurality of openings;
preparing a red light emitting unit and a green light emitting unit in the plurality of openings, respectively, using inkjet printing or photolithography;
preparing a first distributed Bragg reflection layer on the pixel defining layer; and
and preparing a blue light emitting layer on the first distributed Bragg reflection layer.
In some embodiments of the present invention, the method further comprises preparing at least one second distributed bragg reflector layer in each of the red light emitting unit and the green light emitting unit.
In some embodiments of the present invention, the first distributed bragg reflector layer or the second distributed bragg reflector layer is formed by depositing silicon oxide or silicon nitride by chemical vapor deposition.
Compared with the existing display panel, the display panel has the advantages that at least one distributed Bragg reflection layer is additionally arranged in the display panel, and due to the fact that the distributed Bragg reflection layer is high in transmittance and low in reflectivity for blue light and low in transmittance and high in reflectivity for red light and green light, the distributed Bragg reflection layer can selectively transmit the blue light and lead out the reversely emitted red light and green light, and the brightness of the display panel is improved; the distributed Bragg reflection layer has the characteristic of isolating water and oxygen, so that the stability and the service life of the display panel are improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the optical path in one embodiment of the present invention;
FIG. 4 is a graph of wavelength versus transmittance in accordance with an embodiment of the present invention;
FIG. 5 is a graph of wavelength versus luminous intensity for one embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a DBR layer according to an embodiment of the invention;
FIG. 8 is a graph of wavelength versus reflectivity for one embodiment of the present invention; and
FIG. 9 is a flow chart of a method of making in one embodiment of the invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
The prior display panel has the technical problem that the overall brightness of the display panel is relatively low due to low light conversion efficiency of quantum dot light.
Accordingly, embodiments of the present invention provide a display panel and a method for manufacturing the display panel, which are described in detail below.
First, an embodiment of the invention provides a display panel, as shown in fig. 1, and fig. 1 is a schematic structural diagram of the display panel in an embodiment of the invention. The display panel includes: a base substrate 101; a pixel defining layer 102 disposed on one side surface of the substrate base plate 101 and having a plurality of openings; a red light emitting unit 103 and a green light emitting unit 104 respectively disposed in the plurality of openings; a first Distributed Bragg Reflector (DBR) 105 disposed on a surface of the pixel defining layer 102 away from the substrate 101; and a blue light emitting layer 106 disposed on a surface of the first distributed bragg reflector layer 105 away from the pixel defining layer 102.
Compared with the existing display panel, the display panel has the advantages that at least one distributed Bragg reflection layer is additionally arranged in the display panel, and due to the fact that the distributed Bragg reflection layer is high in transmittance and low in reflectivity for blue light and low in transmittance and high in reflectivity for red light and green light, the distributed Bragg reflection layer can selectively transmit the blue light and lead out the reversely emitted red light and green light, and the brightness of the display panel is improved; the distributed Bragg reflection layer has the characteristic of isolating water and oxygen, so that the stability and the service life of the display panel are improved.
In the embodiment of the present invention, the display panel further includes a back plate 107 disposed on a surface of the blue light emitting layer 106 away from the first distributed bragg reflector layer 105.
In another embodiment of the present invention, as shown in fig. 2, fig. 2 is a schematic structural diagram of a display panel in an embodiment of the present invention. The display panel further includes a second distributed bragg reflector 108, and at least one second distributed bragg reflector 108 is respectively disposed in each of the red light emitting unit 103 and the green light emitting unit 104.
When the display panel includes at least two distributed bragg reflector layers, multiple beam interference is formed, and the distributed bragg reflector layers include the first distributed bragg reflector layer 105 and the second distributed bragg reflector layer 108. After the light emitting unit emits light, light is irradiated to a critical surface between the light emitting unit and the distributed bragg reflector, and due to the fact that a plurality of critical surfaces are parallel to each other, a phenomenon of amplitude division and equal inclination interference is generated, wherein the light emitting unit comprises the red light emitting unit 103 or the green light emitting unit 104. Since there is also a possibility that light reflected from the lower surface will be re-reflected by the upper surface, there will be a third beam of transmitted light exiting the upper surface and interfering with the first two beams. By analogy, if the loss of the critical plane to the light is negligible (the medium does not absorb or scatter the light), theoretically an infinite number of rays of light exit the upper surface and the rays are coherent with each other. As shown in fig. 3, fig. 3 is a schematic diagram of an optical path in an embodiment of the present invention. Assuming that n is a refractive index, L is a distance between two adjacent distributed bragg reflection layers, and θ is a beam angle, an optical path difference between adjacent reflected light or transmitted light is 2nLcos θ. As shown in fig. 4, fig. 4 is a graph of wavelength and transmittance, where T is transmittance, λ is wavelength, P1 corresponds to reflectance R of 0.3 and pitch L of 1.5, P2 corresponds to reflectance R of 0.4 and pitch L of 1.5, P3 corresponds to reflectance R of 0.5 and pitch L of 1.5, P4 corresponds to reflectance R of 0.6 and pitch L of 1.5, P5 corresponds to reflectance R of 0.7 and pitch L of 1.5, and P6 corresponds to reflectance R of 0.8 and pitch L of 1.5. The display panel has a narrow-band filtering effect, the center wavelength is related to the distance L, and the bandwidth is related to the reflectivity of the distributed bragg reflector, when the reflectivity is increased, the bandwidth is narrowed, and the half-peak width of the light emitted by the light emitting unit is further narrowed, as shown in fig. 5, where fig. 5 is a graph of the wavelength and the light emitting intensity in an embodiment of the present invention. P7 is the emergent light of the light-emitting unit, P8 is the light after the emergent light passes through the distributed Bragg reflection layer, and P8 improves the luminous purity of the light-emitting unit and increases the color gamut of the display panel compared with P7.
It should be noted that, in some embodiments, only one layer of the second distributed bragg reflector 108 is disposed in each of the red light emitting unit 103 and the green light emitting unit 104, in other embodiments, the number of the second distributed bragg reflectors 108 disposed in each of the red light emitting unit 103 and the green light emitting unit 104 is multiple, each of the second distributed bragg reflectors 108 is disposed in the red light emitting unit 103 and the green light emitting unit 104 at intervals, and accordingly, one of the red light emitting unit 103 or the green light emitting unit 104 in the opening is also divided into multiple small sub-units. As shown in fig. 6, fig. 6 is a schematic structural diagram of a display panel according to an embodiment of the present invention.
On the basis of the above embodiments, as shown in fig. 7, fig. 7 is a schematic structural diagram of a distributed bragg reflector in an embodiment of the present invention. The first distributed bragg reflector layer 105 or the second selective reflector layer 108 is a distributed bragg reflector layer formed by laminating a plurality of organic or inorganic film layers. The adjacent film layers have different refractive indexes, and as shown in the figure, the refractive indexes of any two adjacent film layers are n respectivelyLAnd nHPreferably, the thickness of the film layer is one quarter of the glass slide. The film layers with different refractive indexes are alternately and periodically stacked together, when light passes through the film layers with different refractive indexes, the light reflected by the layers is subjected to constructive interference due to the change of phase angle and then is combined with each other to obtain strong reflection light, so that the wavelength of the light is changedThe selection becomes very acute.
FIG. 8 is a graph of wavelength versus reflectivity, as shown in FIG. 8, in accordance with an embodiment of the present invention. R is a reflectance, λ is a wavelength, and the first distributed bragg reflector layer 105 and the second distributed bragg reflector layer 108 have a reflectance for light having a wavelength of 400nm to 480nm that is smaller than a reflectance for light having a wavelength of 500nm to 660 nm. In fact, the wavelengths corresponding to the various colors of visible light are: the wavelength corresponding to the red light is 622-770 nm, the wavelength corresponding to the green light is 592-577 nm, and the wavelength corresponding to the blue light is 455-492 nm. As can be seen from the figure, the reflectivity T2 of P9 at the wavelength of 400nm to 480nm is less than 0.4, and the reflectivity T2 at the wavelength of 500nm to 660nm is greater than 0.6, so that, in the embodiment of the invention, the distributed Bragg reflection layer has strong reflection capability to red light and green light, and has good permeability to blue light. One part of red light and green light emitted by the light emitting unit is directly emitted towards the light emitting direction, the other part of the red light and the green light is emitted towards the opposite direction, the red light and the green light are reflected by the distributed Bragg reflection layer and then emitted towards the light emitting direction, and the blue light emitting layer located on one side, far away from the light emitting direction, of the distributed Bragg reflection layer emits blue light and directly emits the blue light towards the light emitting direction through the distributed Bragg reflection layer. Meanwhile, the red light and the green light of the two parts and the blue light directly reaching the outside are combined together to form white light. The design improves the utilization rate of light, and further improves the brightness of the display panel.
Preferably, the material of the first distributed bragg reflector layer 105 or the second distributed bragg reflector layer 108 includes silicon oxide or silicon nitride. The silicon oxide and the silicon nitride have good chemical stability and the effect of isolating water and oxygen, and the stability and the service life of the display panel are improved.
In some embodiments, a planarization layer is disposed between the light emitting unit and the distributed bragg reflector, and unless otherwise specified, the light emitting unit refers to the red light emitting unit 103 or the green light emitting unit 104, and the distributed bragg reflector refers to the first distributed bragg reflector 105 or the second distributed bragg reflector 108. That is, a flat layer is disposed between one of the first distributed bragg reflector layer 105 or the second distributed bragg reflector layer 108 and one of the red light emitting unit 103 or the green light emitting unit 104.
Preferably, the red light emitting unit 103 and the green light emitting unit 104 are doped with quantum dot light emitting materials, and the blue light emitting layer 106 is a blue OLED light emitting device or a blue Micro LED light emitting device.
In order to better manufacture the display panel in the embodiment of the present invention, on the basis of the display panel, the embodiment of the present invention further provides a manufacturing method of the display panel, where the manufacturing method is used for manufacturing the display panel as described in the above embodiment.
As shown in fig. 9, fig. 9 is a flow chart of a manufacturing method in one embodiment of the invention. The preparation method comprises the following steps:
s1, preparing a pixel defining layer 102 on the substrate 101, wherein the pixel defining layer 102 has a plurality of openings;
s2, preparing red light emitting cells 103 and green light emitting cells 104 in the plurality of openings respectively by inkjet printing or photolithography;
s3, preparing a first distributed bragg reflector layer 105 on the pixel defining layer 102; and
s4, preparing a blue light emitting layer 106 on the first distributed bragg reflector layer 105.
Specifically, in step S2, at least one second distributed bragg reflector 108 is prepared in each of the red light emitting unit 103 and the green light emitting unit 104.
Specifically, in step S2 or S3, silicon oxide or silicon nitride is deposited by chemical vapor deposition to form the first distributed bragg reflector layer 105 or the second distributed bragg reflector layer 108.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and parts that are not described in detail in a certain embodiment may refer to the above detailed descriptions of other embodiments, and are not described herein again. In a specific implementation, each unit or structure may be implemented as an independent entity, or may be combined arbitrarily to be implemented as one or several entities, and specific implementations of each unit, structure, or operation may refer to the foregoing method embodiments, which are not described herein again.
The above embodiments of the present invention are described in detail, and the principle and the implementation of the present invention are explained by applying specific embodiments, and the above description of the embodiments is only used to help understanding the method of the present invention and the core idea thereof; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. A display panel, comprising:
a substrate base plate;
the pixel definition layer is arranged on one side surface of the substrate base plate and is provided with a plurality of openings;
the red light-emitting unit and the green light-emitting unit are respectively arranged in the plurality of openings;
the first distributed Bragg reflection layer is arranged on the surface of one side, away from the substrate, of the pixel definition layer; and
and the blue light emitting layer is arranged on the surface of one side of the first distributed Bragg reflection layer far away from the pixel defining layer.
2. The display panel according to claim 1, further comprising a second distributed bragg reflector, wherein at least one of the second distributed bragg reflectors is disposed in each of the red light emitting unit and the green light emitting unit.
3. The display panel according to claim 2, wherein the number of the second distributed bragg reflectors provided in each of the red light emitting unit and the green light emitting unit is plural, and the second distributed bragg reflectors are provided at intervals in the red light emitting unit and the green light emitting unit.
4. The display panel according to claim 2, wherein the first distributed bragg reflector layer or the second distributed bragg reflector layer is a stack of a plurality of organic or inorganic film layers, and refractive indices of adjacent film layers are different.
5. The display panel according to claim 2, wherein the first distributed bragg reflector layer and the second distributed bragg reflector layer have a reflectance with respect to light having a wavelength of 400nm to 480nm that is smaller than a reflectance with respect to light having a wavelength of 500nm to 660 nm.
6. The display panel according to claim 2, wherein a material of the first distributed bragg reflector layer or the second distributed bragg reflector layer comprises silicon oxide or silicon nitride, and a planarization layer is provided between one of the first distributed bragg reflector layer or the second distributed bragg reflector layer and one of the red light emitting unit or the green light emitting unit.
7. The display panel of claim 1, wherein the red and green light emitting cells are doped with quantum dot emissive material.
8. A method for manufacturing a display panel, comprising:
preparing a pixel defining layer on a substrate, wherein the pixel defining layer is provided with a plurality of openings;
preparing a red light emitting unit and a green light emitting unit in the plurality of openings, respectively, using inkjet printing or photolithography;
preparing a first distributed Bragg reflection layer on the pixel defining layer; and
and preparing a blue light emitting layer on the first distributed Bragg reflection layer.
9. The method according to claim 8, further comprising forming at least one second distributed bragg reflector in each of the red light emitting unit and the green light emitting unit.
10. The method according to claim 9, wherein the first or second distributed bragg reflector layer is formed by depositing silicon oxide or silicon nitride by chemical vapor deposition.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022169059A1 (en) * | 2021-02-02 | 2022-08-11 | 삼성전자주식회사 | Display module, and method for manufacturing same |
| WO2022169058A1 (en) * | 2021-02-02 | 2022-08-11 | 삼성전자주식회사 | Display module, and method for manufacturing same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170141162A1 (en) * | 2015-11-16 | 2017-05-18 | Industry-Academic Cooperation Foundation Yonsei University | Display panel and apparatus including the same |
| CN109545832A (en) * | 2018-11-29 | 2019-03-29 | 京东方科技集团股份有限公司 | Organic light-emitting diode display substrate and preparation method thereof, display device |
| CN111128035A (en) * | 2018-10-30 | 2020-05-08 | 咸阳彩虹光电科技有限公司 | OLED display panel and display thereof |
| CN111326562A (en) * | 2020-03-05 | 2020-06-23 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot display panel and preparation method thereof |
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| US20170141162A1 (en) * | 2015-11-16 | 2017-05-18 | Industry-Academic Cooperation Foundation Yonsei University | Display panel and apparatus including the same |
| CN111128035A (en) * | 2018-10-30 | 2020-05-08 | 咸阳彩虹光电科技有限公司 | OLED display panel and display thereof |
| CN109545832A (en) * | 2018-11-29 | 2019-03-29 | 京东方科技集团股份有限公司 | Organic light-emitting diode display substrate and preparation method thereof, display device |
| CN111326562A (en) * | 2020-03-05 | 2020-06-23 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot display panel and preparation method thereof |
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| WO2022169059A1 (en) * | 2021-02-02 | 2022-08-11 | 삼성전자주식회사 | Display module, and method for manufacturing same |
| WO2022169058A1 (en) * | 2021-02-02 | 2022-08-11 | 삼성전자주식회사 | Display module, and method for manufacturing same |
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| CN111710800B (en) | 2022-12-23 |
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