CN217280834U

CN217280834U - Display device

Info

Publication number: CN217280834U
Application number: CN202221104053.4U
Authority: CN
Inventors: 李潇; 李阳
Original assignee: Hisense Visual Technology Co Ltd
Current assignee: Hisense Visual Technology Co Ltd
Priority date: 2022-05-09
Filing date: 2022-05-09
Publication date: 2022-08-23
Anticipated expiration: 2032-05-09

Abstract

The utility model discloses a display device, include: the driving substrate, the light-emitting chip positioned on the driving substrate and the color conversion substrate arranged opposite to the driving substrate; the color conversion substrate includes: a substrate and an imprinting layer; the imprinting layer comprises a plurality of accommodating units which are sunken towards one side of the base material; the light emitting side of one light emitting chip is correspondingly provided with an accommodating unit; and the color conversion layer is positioned in part of the accommodating unit. The small-angle light emitted by the light emitting chip has high luminous intensity and can fully excite the color conversion layer corresponding to the central area with low thickness in the color conversion layer; the light emitting intensity of the large-angle light emitted by the light emitting chip is small, and the light emitting intensity corresponds to the edge area with large thickness in the color conversion layer, so that the excitation efficiency of the color conversion layer in the edge area can be further improved, the excitation efficiency of the color conversion layer at each position is equivalent, and the problem of halation caused by insufficient conversion at the edge position is avoided.

Description

Display device

Technical Field

The utility model relates to a show technical field, especially relate to a display device.

Background

Light Emitting Diodes (LEDs) are considered to be an ideal form of future display technology due to their characteristics of high brightness, fast response, high stability, etc. In order to achieve pixel level display, the LED chip may be miniaturized, and a Mini LED (Mini LED for short) or a Micro LED (Micro LED for short) is used as the Light Emitting device.

The mode that present Micro LED display device realized full colorization is that blue light Micro LED arouses the color conversion layer, and this kind of mode can avoid the low problem of trichrome transfer yield and the inconsistent problem of red, green and blue trichrome efficiency. At present, the color conversion layer is mainly prepared by photoetching or ink-jet printing, the color conversion units prepared by the two methods are planes, and from LED light-emitting characteristic analysis, because the luminous intensity distribution of an LED is Lambert distribution, the halo problem is caused by insufficient conversion of part of the color conversion layer due to uneven light intensity distribution.

SUMMERY OF THE UTILITY MODEL

In some embodiments of the present invention, a display device, includes:

a driving substrate for providing a driving signal;

the light-emitting chip is positioned on the driving substrate and is electrically connected with the driving substrate;

a color conversion substrate disposed opposite to the driving substrate; the color conversion substrate includes:

a base material disposed opposite to the driving substrate;

the imprinting layer is positioned on one side of the base material, which faces the driving substrate; the imprinting layer comprises a plurality of accommodating units which are sunken towards one side of the base material; the light emitting side of one light emitting chip is correspondingly provided with an accommodating unit;

a color conversion layer located in a portion of the receiving unit; the color conversion layer is used for emitting light of other colors under the excitation of the emergent light of the light emitting chip; the thickness of the color conversion layer at the center position is smaller than the thickness of the color conversion layer at the edge position.

The small-angle light emitted by the light emitting chip has high luminous intensity and can fully excite the color conversion layer corresponding to the central area with low thickness in the color conversion layer; the light emitting intensity of the large-angle light emitted by the light emitting chip is small, and the large-angle light corresponds to the edge area with large thickness in the color conversion layer, so that the excitation efficiency of the color conversion layer in the edge area can be further improved, the excitation efficiency of the color conversion layer at each position is equivalent, and the problem of halation caused by insufficient conversion at the edge position is avoided.

In some embodiments of the present invention, the color conversion substrate further comprises: and a scattering layer. The diffusion layer is located in the receiving unit where the color conversion layer is not disposed. The scattering layer is used for scattering the emergent light of the light-emitting chip, so that the light-emitting rule the same as that of the exciting light after passing through the color conversion layer is formed.

The utility model discloses in some embodiments, luminous chip adopts blue light Mini LED chip or blue light Micro LED chip, and the color conversion layer includes: a red conversion layer and a green conversion layer. The red conversion layer emits red light under excitation of blue light, the green conversion layer emits green light under excitation of blue light, and some of the light emitting chips directly emit blue light, thereby constituting tricolor light forming a color image.

The utility model discloses some embodiments, the degree of depth of holding unit in the intermediate position that the impression formed is greater than the degree of depth of holding unit at border position to make the formation can hold the cavity that holds of light-emitting chip. The color conversion layer is formed in the receiving unit, and a surface in contact with the receiving unit generally has the same shape as the receiving unit. The depth of the middle position of the accommodating unit is greater than that of the edge position, and the depth of the middle position of the accommodating unit is more consistent with the light emitting type of the LED chip.

The utility model discloses in some embodiments, the surface that holds unit one side towards luminous chip is the arc, makes the surface of color conversion layer and holding unit contact from this, and the surface that the color conversion layer leaves luminous chip one side also is the arc promptly. The arc surface can satisfy a cosine equation to be more suitable for Lambert distribution of emergent light of the LED chip. The surface of the color conversion layer facing to one side of the light emitting chip is also arc-shaped, and the arc-shaped color conversion layer can wrap the light emitting chip, so that large-angle light emitted by the light emitting chip can excite the color conversion layer to perform color conversion, and the conversion efficiency of the color conversion layer is improved.

The utility model discloses in some embodiments, the scattering layer sets up to the shape the same with the color conversion layer usually, and the scattering layer is the arc to the surface of emitting chip one side and the surface that the scattering layer deviates from emitting chip one side.

The utility model discloses in some embodiments, can suitably increase the thickness of color conversion layer, because the color conversion layer sets up to the arc, can live the parcel of luminous chip for the blue light energy of luminous chip outgoing is transformed by the color conversion layer completely, avoids crosstalking to adjacent position from this, does not need to additionally set up the light filtering structure again simultaneously.

The utility model discloses some embodiments, a plurality of microstructures of distribution in the color conversion layer, the emergent light of luminous chip is incidenting after the microstructure, and the direction of propagation produces the randomness and changes to reduce the total reflection effect. In addition, the microstructures are distributed in the color conversion layer, so that the refractive index of the color conversion layer is reduced, the refractive index difference between the color conversion layer and an adjacent film layer is reduced, total reflection is reduced, and the light emergence efficiency is improved.

In some embodiments of the present invention, the micro structure is a through hole, a blind hole or a hollow structure.

In some embodiments of the present invention, the color conversion substrate further comprises: and a filter layer. The filter layer is positioned between the accommodating unit and the color conversion layer; the filter layer is used for filtering blue light to transmit red light and green light, so that red light or green light emitted by the color conversion layer in an excited mode can be emitted, and the blue light which is not completely converted is filtered, and light crosstalk is avoided. And the blue light emitted by the light-emitting chip cannot enter the adjacent accommodating units due to the existence of the filter layer, so that light crosstalk can be avoided. By adopting the structure of the filter layer, the color conversion substrate and the driving substrate can be completely attached without a certain distance between the color conversion substrate and the driving substrate, so that the overall thickness of the display device is reduced, and the light and thin design of the display device is facilitated.

The utility model discloses some embodiments, after setting up the filter layer in the color conversion base plate, do not have too much restriction to the thickness of color conversion layer, can suitably attenuate the thickness of color conversion layer, can be filtered by the filter layer because of the blue light that is not converted, can not take place the problem of optical crosstalk.

In some embodiments, the filter layer may be a bragg reflector, a fabry-perot resonator, or a chemical film.

The utility model discloses in some embodiments, display device still includes: and a reflective layer. The reflecting layer is positioned on one side of the driving substrate close to the light emitting chip and comprises a plurality of openings used for exposing the light emitting chip. Due to the arrangement of the filter layer, the imprinting layer of the color conversion substrate can be directly contacted with the reflecting layer so as to reduce the thickness of the display device. The containing unit of the imprinting layer has an overlapped area in the orthographic projection of the driving substrate and the orthographic projection of the reflecting layer on the driving substrate, so that light rays which can be emitted or reflected to one side of the driving substrate are reflected to the light emitting side of the display device by the reflecting layer, and the utilization efficiency of the light rays is improved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments of the present invention will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

FIG. 1 is a schematic diagram of a display device according to the related art;

fig. 2 is a schematic structural diagram of a display device according to an embodiment of the present invention;

fig. 3 is a schematic cross-sectional structure diagram of an imprinting layer according to an embodiment of the present invention;

fig. 4 is a schematic plan view of an imprinting layer according to an embodiment of the present invention;

fig. 5a-5b are schematic structural diagrams of the imprinting layer according to an embodiment of the present invention during a manufacturing process;

fig. 6 is a schematic plan view of a driving substrate according to an embodiment of the present invention;

fig. 7 is a schematic cross-sectional structure view of a light emitting chip according to an embodiment of the present invention;

fig. 8 is a second schematic structural diagram of a display device according to an embodiment of the present invention;

fig. 9a to 9n are schematic structural diagrams of a color conversion layer and a scattering layer in a manufacturing process according to an embodiment of the present invention;

fig. 10 is a schematic partial enlarged view of a color conversion layer according to an embodiment of the present invention;

fig. 11 is a third schematic structural view of a display device according to an embodiment of the present invention;

fig. 12 is a schematic structural diagram of a bragg reflector according to an embodiment of the present invention;

fig. 13 is a schematic structural diagram of a resonant cavity according to an embodiment of the present invention;

fig. 14 is a fourth schematic structural diagram of a display device according to an embodiment of the present invention.

Wherein, 1-driving substrate, 2-light emitting chip, 3-color conversion substrate, 4-filter layer, 5-reflection layer, 21-n type doped layer, 22-light emitting layer, 23-p type doped layer, 24-insulating layer, 25-electrode, 31-base material, 32-color conversion layer, 32 r-red conversion layer, 32 g-green conversion layer, 33-imprinting layer, 34-scattering layer, 32r '-red conversion material, 32 g' -green conversion material, 33 '-imprinting glue, 34' -scattering material, 41-first dielectric layer, 42-second dielectric layer, 43-dielectric layer, M-imprinting mold, Mr-first mold, Mg-second mold, Mb-third mold, M1-mold, the structure comprises an S-containing unit, an Sr-first containing unit, an Sg-second containing unit, an Sb-third containing unit, an h-microstructure and a d-shading retaining wall.

Detailed Description

In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described with reference to the accompanying drawings and examples. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their repetitive description will be omitted. The words for expressing the position and direction described in the present invention are all the explanations given by taking the drawings as examples, but can be changed according to the needs, and the changes are all included in the protection scope of the present invention. The drawings of the present invention are only for illustrating the relative positional relationship and do not represent true proportions.

The Light Emitting Diode (LED) display technology refers to a display technology using LEDs as display devices. In order to achieve pixel level display, the LED chip may be miniaturized, and a Mini LED (Mini LED) or a Micro LED (Micro LED) is used as a Light Emitting device. Wherein, the Mini LED is larger than the Micro LED, and under the normal condition, the Mini LED is smaller than 500 μm, and the Micro LED is smaller than 100 μm. In specific implementation, the light emitting chip with the corresponding size may be adopted according to the requirement of the pixel resolution, which is not limited herein.

Because the Micro LED inherits the characteristics of high efficiency, high brightness, high reliability, quick response time and the like of the traditional light emitting diode, has the characteristic of self luminescence without a backlight source, has the advantages of energy conservation, simple mechanism, small volume, thinness and the like, and is greatly developed by adopting a Micro LED direct display technology. The Micro LED has wide application prospect in public display, TV, vehicle-mounted, commercial display, mobile phones and other aspects in the future, and is an important display technology in the future.

The full-color display scheme of the Micro LED display device can be realized by a color conversion method, a three-primary-color method, an optical prism synthesis method, a method for controlling the structure and the size of a light-emitting chip to emit light with different wavelengths and the like. Among them, color conversion using a color conversion material is considered as one of the most potential methods.

The mode of utilizing the color conversion material to carry out color conversion can avoid the problem of low yield of three-color transfer and the problem of inconsistent red, green and blue three-color efficiency. At present, the color conversion layer is mainly prepared by photoetching or ink-jet printing, the color conversion units prepared by the two methods are planes, and from LED light-emitting characteristic analysis, because the luminous intensity distribution of an LED is Lambert distribution, the halo problem is caused by insufficient conversion of part of the color conversion layer due to uneven light intensity distribution.

Fig. 1 is a schematic structural diagram of a display device in the related art.

As shown in fig. 1, the display device includes a driving substrate 1, a light emitting chip 2, and a color conversion substrate 3. The color conversion substrate includes a base 31 and a color conversion layer 32 on the surface of the base.

It can be seen from fig. 1 that the color conversion layer 32 is generally arranged in a plane, and the thickness at each location is uniform and equal. However, when the light emitting chip is a lambertian light source, the light emitting intensity at each position of the light emitting chip is related to the light emitting angle, which is the included angle between the light emitting direction and the normal. The emission intensity is maximum when the emission angle is 0 degrees, and decreases as the emission angle increases. Since the color conversion layer 32 is a plane, the small-angle light emitted from the light emitting chip 2 can sufficiently excite the color conversion layer 32 due to the high luminous intensity; however, the large-angle light emitted from the light emitting chip 2 cannot sufficiently excite the color conversion layer 32, so that the excitation efficiency of the color conversion layer 32 at the center position is different from that at the edge position, and the halo problem is caused due to insufficient conversion at the edge position.

In view of this, the present invention provides a display device, which can improve the halo problem caused by insufficient conversion of the color conversion layer.

Fig. 2 is a schematic structural diagram of a display device according to an embodiment of the present invention.

As shown in fig. 2, an embodiment of the present invention provides a display device including: a driving substrate 1, a light emitting chip 2 and a color conversion substrate 3.

The driving substrate 1 is located at the bottom of the display device, and its size is usually adapted to the overall size of the display device, and the size of the driving substrate 1 is slightly smaller than that of the display device.

In some embodiments, the display device may also include a plurality of driving substrates 1, and the driving substrates 1 are connected to each other by a joint method to provide driving signals. In order to avoid the optical problem caused by splicing the driving substrates 1, the splicing seams between the adjacent driving substrates 1 are as small as possible, and even seamless splicing is realized.

The shape of the driving substrate 1 is the same as the overall shape of the display device, and may be generally rectangular or square. When the display device is a special-shaped display device, the shape of the driving substrate can be adaptively set to other shapes, which is not limited herein.

The driving substrate 1 is used to provide a driving signal. In general, the driving substrate 1 may be a circuit board or an array substrate.

The Circuit Board may be a Printed Circuit Board (PCB), and when the Circuit Board is applied to a Flexible display, a Flexible Printed Circuit (FPC) may be used, which is not limited herein.

The array substrate can be manufactured with a Thin Film Transistor (TFT) array on the substrate by using a Thin Film process, and is used for driving the light emitting chip. In specific implementation, a plurality of TFT structures may be fabricated on the substrate by deposition, etching, and the like, so that active driving of the light emitting chip may be achieved.

The light emitting chip 2 is located on the driving substrate 1 and electrically connected to the driving substrate 1. In the embodiment of the present invention, the light emitting chip 2 is used for emitting monochromatic light, and the color conversion substrate 3 is used to realize full-color display.

In some embodiments, the light emitting chip 2 may be a Micro light emitting diode chip, which may be a Mini LED chip or a Micro LED chip. The size of the Mini LED chip and the size of the Micro LED chip can reach the magnitude of micron or sub-millimeter, and the size of the Mini LED chip is larger than that of the Micro LED chip. When the method is applied to different application scenes and the requirements on the pixel level are different, a Mini LED chip or a Micro LED chip can be adopted as the sub-pixels according to the implementation condition.

When the light emitting chip 2 is a Mini LED chip or a Micro LED chip, the light emitting chip 2 and the driving substrate 1 are usually manufactured separately. If the light emitting chip 2 is a Mini LED chip, after the Mini LED chip and the driving substrate 1 are manufactured, the Mini LED chip and the driving substrate 1 are bonded by using a die bonding technique. If the light emitting chip 2 adopts a Micro LED chip, after the Micro LED chip and the driving substrate 1 are manufactured, the Micro LED chip is transferred onto the driving substrate 1 through a mass transfer technology and is bonded with the driving substrate 1.

The color conversion substrate 3 is disposed opposite to the driving substrate 1, and the color conversion substrate 3 is located on the light emitting side of the light emitting chip 2.

The size of the color conversion substrate 3 is adapted to the overall size of the display device, and the size of the color conversion substrate 3 is slightly smaller than the size of the display device. The size of the color conversion substrate 3 corresponds to the size of the drive substrate 1.

The color conversion substrate 3 has the same shape as the overall shape of the display device, and may be generally provided in a rectangular shape or a square shape. When the display device is a special-shaped display device, the shape of the driving substrate can be adaptively set to other shapes, which is not limited herein.

As shown in fig. 2, the color conversion substrate 3 includes: substrate 31, imprinting layer 33, and color conversion layer 32.

The base material 31 is disposed opposite to the drive substrate 1. The size of the substrate 31 is adapted to the overall size of the display device, and the size of the substrate 31 is slightly smaller than the size of the display device.

The shape of the substrate 31 is the same as the overall shape of the display device, and may be generally rectangular or square, and is not limited thereto.

The substrate 31 has a supporting and supporting function, and may be made of glass or organic material, which is not limited herein.

Fig. 3 is a schematic cross-sectional structure view of the impression layer provided by the embodiment of the present invention, and fig. 4 is a schematic plan structure view of the impression layer provided by the embodiment of the present invention.

As shown in fig. 3 and 4, the print layer 33 is located on the side of the base material 31 facing the drive substrate 1, and the print layer 33 includes a plurality of accommodating units S recessed toward the side of the base material 31.

Fig. 5a-5b are schematic structural diagrams of the imprinting layer according to an embodiment of the present invention during a manufacturing process.

In one implementation, as shown in fig. 5a, a layer of imprint resist 33' may be uniformly coated on the surface of the substrate 31; then, as shown in fig. 5b, imprinting is performed on the imprinting paste 33' by the imprinting mold M, thereby imprinting the accommodating unit S shown in fig. 3.

The imprinting glue can be photo-curing glue or thermal-curing glue, and when photo-curing glue is adopted, the imprinting glue is cured through ultraviolet irradiation after imprinting is finished to form an imprinting layer 33; when the thermal curing adhesive is used, the imprint layer 33 is formed by curing the imprint adhesive in a heating manner after the imprint is completed, which is not limited herein.

Fig. 6 is a schematic plan view of a driving substrate according to an embodiment of the present invention.

As shown in fig. 4 and fig. 6, the light emitting chips 2 on the driving substrate 1 are arranged in an array, correspondingly, the accommodating units S on the imprinting layer 33 are arranged in an array, one accommodating unit S is correspondingly arranged on the light emitting side of one light emitting chip 2, and after the driving substrate 1 and the color conversion substrate 3 are oppositely arranged, the structure shown in fig. 2 can be obtained.

The embodiment of the utility model provides an in, emitting chip 2 is used for emergent blue light, specifically can adopt blue light Mini LED chip or blue light Micro LED chip.

Fig. 7 is a schematic cross-sectional structure view of a light emitting chip according to an embodiment of the present invention.

As shown in fig. 7, when the light emitting chip adopts a Mini LED chip or a blue light Micro LED chip, the method may specifically include: n-type doped layer 21, light emitting layer 22, p-type doped layer 23, insulating layer 24, and electrode 25.

The n-doped layer 21, the light emitting layer 22 and the p-doped layer 23 are arranged in a stack and grown on a suitable substrate using LED epitaxy. The n-type doped layer 21 and the p-type doped layer 23 may be formed by n-type doping and p-type doping, respectively, using GaN materials.

The light emitting layer 22 and the p-type doped layer 23 expose a portion of the n-type doped layer 21 for forming an electrode. An insulating layer 24 is formed on the surfaces of the exposed n-doped layer 21 and p-doped layer 23 before the electrodes are formed. The insulating layer 24 serves to protect the non-electrode region from the external environment and to prevent short circuits between the electrodes. SiO may be used for the insulating layer 24 ₂ 、AlN、Al ₂ O ₃ And one or more materials of AlON are manufactured by means of atomic layer deposition or plasma chemical vapor deposition and the like.

The insulating layer 24 includes two through holes exposing a part of the n-type doped layer 21 and a part of the p-type doped layer 23, respectively; the two electrodes 25 are in contact with the exposed n-type doped layer 21 and p-type doped layer 23 through two through holes, respectively. The electrode connected to n-type doped layer 21 is an n-electrode, the electrode connected to p-type doped layer 23 is a p-electrode, the n-electrode may be Ti/Al/Ni/Au metal, the p-electrode may be Ni/Au metal, and the material for making the electrodes may include, but is not limited to, Cr, Ti, Ni, Au, Sn, Al, Au, Pt, and other metals or combinations.

Two electrodes of the light-emitting chip 2 are welded with corresponding bonding pads on the driving substrate 1, so that the driving substrate 1 and the light-emitting chip 2 are electrically connected.

In order to realize full-color display, as shown in fig. 2, the embodiment of the present invention provides a color conversion layer 32 in a part of the housing unit S. The color conversion layer 32 is used to emit light of another color by excitation of the outgoing light from the light emitting chip 2.

Specifically, the light emitting chip 2 employs a blue Mini LED chip or a blue Micro LED chip, and thus the color conversion layer 32 includes: a red conversion layer 32r and a green conversion layer 32 g. The red conversion layer 32r emits red light under excitation of blue light, the green conversion layer 32g emits green light under excitation of blue light, and some of the light emitting chips 2 directly emit blue light, thereby constituting tricolor light forming a color image.

In the embodiment of the present invention, the color conversion layer 32 can adopt quantum dot material, the quantum dot material has higher color gamut, and the wavelength of the light emitted by the quantum dot material is determined by the composition and the particle size of the quantum dot. In specific implementation, the quantum dot material may be at least one selected from zinc sulfide, zinc oxide, gallium nitride, zinc selenide, cadmium sulfide, gallium selenide, cadmium selenide, zinc telluride, cadmium telluride, gallium arsenide, indium phosphide, lead telluride, and perovskite quantum dots, which is not limited herein. In addition, the color conversion layer may also be made of other materials with similar functions, such as fluorescent materials, and is not limited herein.

Because the light emitting chip 2 adopts Mini LED chip or Micro LED chip more, and its luminous intensity satisfies lambertian distribution, therefore, in the embodiment of the present invention, as shown in fig. 2, the thickness of the color conversion layer 32 at the central position is less than the thickness at the edge position. Since the light emitting intensity of the small-angle light emitted from the light emitting chip 2 is large, the color conversion layer 32 can be sufficiently excited corresponding to the central region of the color conversion layer 32 with a small thickness; the light emitting intensity of the large-angle light emitted by the light emitting chip 2 is small, and the large-angle light corresponds to the edge area with large thickness in the color conversion layer 32, so that the excitation efficiency of the color conversion layer 32 in the edge area can be further improved, the excitation efficiency of the color conversion layer at each position is equivalent, and the problem of halation caused by insufficient conversion at the edge position is avoided.

Fig. 8 is a second schematic structural diagram of a display device according to an embodiment of the present invention.

As shown in fig. 8, the color conversion substrate 3 further includes: a scattering layer 34. The diffusion layer 34 is located in the receiving unit S where the color conversion layer 32 is not disposed. The scattering layer 34 is used for scattering blue light emitted from the light emitting chip, so as to form the same light emitting rule as the excitation light after passing through the color conversion layer 32.

The scattering layer 34 is generally composed of a transparent matrix and scattering particles dispersed in the transparent matrix, and the scattering particles can scatter incident blue light in all directions to form uniform outgoing light. Wherein, the transparent matrix can be PMMA, PC, PS, PP and other materials, and the diffusion particles can be TiO ₂ Etc. may be made of particles having a scattering effect, without limitation.

Thereby, the red conversion layer 32r, the green conversion layer 32g, and the scattering layer 34 are repeatedly arranged in the housing unit S in a set order. The light emitting chip 2 excites the red conversion layer 32r to emit red light as a red sub-pixel, the light emitting chip 2 excites the green conversion layer 32g to emit green light as a green sub-pixel, and the light emitting chip 2 emits blue light as a blue sub-pixel through the scattering layer 34. One red conversion layer 32r and the corresponding light emitting chip 2, one green conversion layer 32g and the corresponding light emitting chip 2, and one scattering layer 34 and the corresponding light emitting chip 2, which are adjacent, constitute one pixel unit. Full-color display can be realized by controlling the proportion of different colors of light rays in each pixel unit.

As shown in fig. 3, in the embodiment of the present invention, the depth of the accommodating unit S formed by stamping at the middle position is greater than the depth of the accommodating unit S at the edge position, so as to form an accommodating cavity capable of accommodating the light emitting chip. The shape of the accommodating unit S is generally the same as that of the imprint mold, and the color conversion layer is formed in the accommodating unit S, and the surface in contact with the accommodating unit S generally has the same shape as that of the accommodating unit S. The depth of the middle position of the accommodating unit S is larger than that of the edge position, and the depth of the middle position of the accommodating unit S is more consistent with the light emitting type of the LED chip.

In some embodiments, as shown in fig. 2 and 8, the surface of the accommodating unit S facing the light emitting chip 2 is arc-shaped, so that the surface of the color conversion layer 32 contacting the accommodating unit S, i.e., the surface of the color conversion layer 32 facing away from the light emitting chip 2, is also arc-shaped. In specific implementation, the arc surface can satisfy a cosine equation so as to be more suitable for Lambert distribution of light emitted by the LED chip.

In order to make the thickness of the color conversion layer 32 smaller at the center position than at the edge position, as shown in fig. 2 and 8, the surface of the color conversion layer 32 on the side facing the light emitting chip 2 may also be provided in an arc shape. The arc-shaped color conversion layer 32 can wrap the light emitting chip 2, so that the color conversion layer 32 can be excited by the high-angle light emitted by the light emitting chip 2 to perform color conversion, and the conversion efficiency of the color conversion layer is improved.

While the diffusion layer 34 is generally provided in the same shape as the color conversion layer 32, as shown in fig. 8, the surface of the diffusion layer 34 on the side facing the light emitting chip 2 and the surface of the diffusion layer 34 on the side facing away from the light emitting chip 2 are both arc-shaped.

In some embodiments, the thickness of the color conversion layer 32 can be increased appropriately, and since the color conversion layer 32 is configured in an arc shape, the light emitting chip can be wrapped, so that the blue light emitted from the light emitting chip can be completely converted by the color conversion layer 32, thereby avoiding crosstalk to an adjacent position, and at the same time, no additional filter structure is required.

In one embodiment, the color conversion layer 32 and the diffuser layer 34 may be formed by imprinting. Fig. 9a to 9n are schematic structural diagrams of a color conversion layer and a scattering layer provided in the manufacturing process of the present invention.

As shown in fig. 9a, a layer of imprinting paste 33' is formed on the surface of the base material 31, and a plurality of first accommodating units Sr as shown in fig. 9b are formed by imprinting using the first mold Mr. Next, as shown in fig. 9c, the red conversion material 32r 'is formed on the surface of the imprint paste 33', the first accommodating unit Sr is filled with the red conversion material 32r ', and the red conversion material 32 r' remaining in the outside of the first accommodating unit Sr is scraped off as shown in fig. 9 d.

As shown in fig. 9e, the second mold Mg is further used to imprint the imprint glue 33', so as to form a plurality of second receiving units Sg as shown in fig. 9 f. Next, as shown in fig. 9g, a green conversion material 32g 'is formed on the surface of the imprint glue 33', the green conversion material 32g 'is filled in the second receiving unit Sg, and as shown in fig. 9h, the green conversion material 32 g' which is excessive except for the second receiving unit Sg is scraped.

As shown in fig. 9i, the third mold Mb is used to imprint the imprint glue 33', so as to form a plurality of third accommodating units Sb as shown in fig. 9 j. Next, as shown in fig. 9k, a scattering material 34 'is formed on the surface of the imprint glue 33', the scattering material 34 'is filled in the third housing unit Sb, and as shown in fig. 9l, the scattering material 34' in excess of the third housing unit Sb is scraped.

As shown in fig. 9M, the red conversion material 32r ', the green conversion material 32g ', and the diffusion material 34 ' formed in the receiving unit are further imprinted using a mold M1, thereby forming the shapes of the color conversion layer 32 and the diffusion layer 34 as shown in fig. 9 n. The curvature of the cambered surface of the color conversion layer 32 and the scattering layer 34 on the side close to the imprinting layer 33 is smaller than that of the cambered surface on the side far away from the imprinting layer 33, so that the thickness of the center position of the color conversion layer 32 and the scattering layer 34 is smaller than that of the edge position.

Fig. 10 is a schematic partial enlarged view of a color conversion layer according to an embodiment of the present invention.

As shown in fig. 10, in the embodiment of the present invention, a plurality of microstructures h are distributed in the color conversion layer 32.

Because the refractive index of the quantum dot material is greatly different from the refractive indexes of air and the substrate material, the light generated by the light-emitting chip is easy to be totally reflected at the interface of the high-refractive-index material and the low-refractive-index material, and the light-emitting efficiency of the display device is limited. The embodiment of the utility model provides a distribute a plurality of micro-structure h in color conversion layer 32, the emergent light of emitting chip 2 is incidenting after micro-structure h, and the direction of propagation produces randomness and changes to reduce the total reflection effect. In addition, the microstructure h is distributed in the color conversion layer 32, which is equivalent to reducing the refractive index of the color conversion layer 32, so that the refractive index difference between the color conversion layer 32 and the adjacent film layer is reduced, the total reflection is reduced, and the light emergence efficiency is improved.

In specific implementation, the microstructures h in the color conversion layer 32 may be uniformly or irregularly arranged, and the size of the microstructures h is in the nanometer order to the micrometer order. The microstructure h can also be manufactured by imprinting, and specifically, the color conversion layer 32 can be imprinted by using a mold having a protruding structure, so as to form a microstructure having the same shape as the mold. The microstructure h may be a through hole, a blind hole, or a hollow structure, and when the hollow structure is adopted, it is necessary to use a method of injecting air into the color conversion layer, and the like, which is not limited herein.

As shown in fig. 1, the color conversion substrate 3 and the driving substrate 1 of the related art display device are separated by a certain distance, which may cause crosstalk between sub-pixels, resulting in a decrease in contrast and color rendering capability. In the prior art, a light-shielding retaining wall d is arranged between two substrates, so that the process steps are increased, and due to the light absorption effect of the light-shielding retaining wall d, light incident to the light-shielding retaining wall d is lost and cannot be output as positive light.

In view of this, the embodiment of the present invention provides a display device, which further includes a filter layer inside the accommodating unit S, so as to avoid optical crosstalk and improve light emitting efficiency. Fig. 11 is a third schematic structural diagram of a display device according to an embodiment of the present invention.

As shown in fig. 11, the color conversion substrate 3 further includes: a filter layer 4. The filter layer 4 is located between the containing unit S and the color conversion layer 32; the filter layer 4 is for filtering blue light transmitting red light and green light.

In the embodiment of the present invention, the color conversion layer 32 is of an arc structure, and before the color conversion layer 32 is formed in the containing unit S, the filter layer 4 is formed on the surface of the containing unit S, and it should be noted that the filter layer 4 is formed only in the containing unit S provided with the color conversion layer 32, and as shown in fig. 11, the filter layer 4 is not formed in the containing unit S provided with the scattering layer 34.

The filter layer 4 may filter blue light to transmit red light and green light, thereby allowing red light or green light emitted by the color conversion layer 32 after being excited to exit, while blue light that is not completely converted is filtered to prevent crosstalk. The blue light emitted from the light emitting chip 2 cannot enter the adjacent accommodating unit S due to the filter layer 4, so that the light crosstalk can be avoided. By adopting the structure of the filter layer 4, the color conversion substrate 3 and the driving substrate 1 can be completely attached without a certain distance between the color conversion substrate and the driving substrate, so that the overall thickness of the display device is reduced, and the light and thin design of the display device is facilitated.

In practical implementation, the filter layer 4 may be a bragg reflector, a fabry-perot resonator, or a chemical film. Fig. 12 is a schematic structural diagram of a bragg reflection layer provided in an embodiment of the present invention, and fig. 13 is a schematic structural diagram of a resonant cavity provided in an embodiment of the present invention.

As shown in fig. 12, when the filter layer employs a bragg reflective layer, the bragg reflective layer includes first dielectric layers 41 and second dielectric layers 42 alternately stacked, wherein thicknesses and refractive indexes of the first dielectric layers 41 and the second dielectric layers 42 satisfy a condition that blue light is reflected and red light and green light is transmitted.

The Bragg reflecting layer utilizes the thin film interference principle, two materials with high refractive index and low refractive index are alternately distributed under the common condition, the optical thickness of each dielectric layer is lambda/4, and the reflectivity of which the set wavelength is higher than 95 percent can be achieved by repeatedly arranging a plurality of groups of dielectric layers.

The filter layer 4 using the bragg reflector can reflect the unconverted blue light back to further excite the color conversion layer 32 to perform color conversion, thereby improving the light extraction efficiency.

As shown in fig. 13, when the filter layer is a resonant cavity, the resonant cavity includes two dielectric layers 43 disposed opposite to each other, and the distance between the two dielectric layers 43 and the refractive index of the medium between the two dielectric layers 43 satisfy the condition that blue light is filtered to transmit red light and green light.

The Fabry-Perot resonant cavity utilizes light to continuously reflect and oscillate between two medium layers, so that light rays meeting the wavelength selection condition can overflow. Therefore, frequency selection of light with a set wavelength can be realized by setting the distance between the two dielectric layers 43 and the refractive index of the medium between the two dielectric layers 43.

In addition, the filter layer 4 may use a chemical film, which absorbs blue light and transmits red light and green light, thereby functioning to filter the blue light. In this embodiment, the filter layer 4 may use yellow dye, and the like, and is not limited herein.

It should be noted that, after the color conversion substrate is provided with the filter layer, the thickness of the color conversion layer is not limited too much, and the thickness of the color conversion layer can be reduced appropriately, so that the problem of crosstalk of light will not occur because the unconverted blue light can be filtered by the filter layer 4.

As shown in fig. 14, the display device further includes: a reflective layer 5. The reflective layer 5 is located on a side of the driving substrate 1 adjacent to the light emitting chip 2, and the reflective layer 5 includes a plurality of openings for exposing the light emitting chip 2. Because filter layer 4 has been set up, the embodiment of the utility model provides an impression layer 3 of color conversion base plate can directly contact with reflection stratum 5 to reduce display device thickness.

The containing unit S of the imprinting layer 3 has an overlapping area between the orthographic projection of the driving substrate 1 and the orthographic projection of the reflecting layer 5 on the driving substrate, so that light rays which can be emitted or reflected to one side of the driving substrate 1 are reflected to the light emitting side of the display device by the reflecting layer 5, and the utilization efficiency of the light rays is improved.

In specific implementation, the reflective layer 5 may be a metal reflective layer, or may be made by coating a reflective material on a substrate, which is not limited herein.

According to a first utility model concept, display device includes: the driving substrate, the light-emitting chip positioned on the driving substrate and the color conversion substrate arranged opposite to the driving substrate; the color conversion substrate includes: a substrate and an imprinting layer; the imprinting layer comprises a plurality of accommodating units which are sunken towards one side of the base material; the light emitting side of one light emitting chip is correspondingly provided with an accommodating unit; a color conversion layer located in a part of the receiving unit; the color conversion layer is used for emitting light of other colors under the excitation of the emergent light of the light emitting chip; the thickness of the color conversion layer at the center position is smaller than the thickness of the color conversion layer at the edge position. The small-angle light emitted by the light emitting chip has high luminous intensity and can fully excite the color conversion layer corresponding to the central area with low thickness in the color conversion layer; the light emitting intensity of the large-angle light emitted by the light emitting chip is small, and the light emitting intensity corresponds to the edge area with large thickness in the color conversion layer, so that the excitation efficiency of the color conversion layer in the edge area can be further improved, the excitation efficiency of the color conversion layer at each position is equivalent, and the problem of halation caused by insufficient conversion at the edge position is avoided.

According to a second utility model, the color conversion substrate further includes: and a scattering layer. The diffusion layer is located in the receiving unit where the color conversion layer is not disposed. The scattering layer is used for scattering the emergent light of the light-emitting chip, so that the light-emitting rule the same as that of the exciting light after passing through the color conversion layer is formed.

According to the third utility model concept, luminous chip adopts blue light Mini LED chip or blue light Micro LED chip, and the color conversion layer includes: a red conversion layer and a green conversion layer. The red conversion layer emits red light under excitation of blue light, the green conversion layer emits green light under excitation of blue light, and some of the light emitting chips directly emit blue light, thereby constituting tricolor light forming a color image.

According to the fourth inventive concept, the depth of the accommodating unit formed by embossing at the middle position is greater than the depth of the accommodating unit at the edge position, thereby forming an accommodating cavity that can accommodate the light emitting chip. The color conversion layer is formed in the receiving unit, and a surface in contact with the receiving unit generally has the same shape as the receiving unit. The depth of the middle position of the accommodating unit is greater than the depth of the edge position, and the depth of the middle position of the accommodating unit is more consistent with the light emitting shape of the LED chip.

According to the fifth novel concept, the surface of the accommodating unit on the side facing the light emitting chip is arc-shaped, thereby making the surface of the color conversion layer in contact with the accommodating unit, i.e., the surface of the color conversion layer on the side away from the light emitting chip, also arc-shaped. The arc-shaped surface can satisfy a cosine equation so as to be more suitable for Lambert distribution of emergent light of the LED chip. The arc-shaped color conversion layer can wrap the light-emitting chip, so that the wide-angle light emitted by the light-emitting chip can excite the color conversion layer to perform color conversion, and the conversion efficiency of the color conversion layer is improved.

According to the sixth utility model discloses think about, can suitably increase the thickness of color conversion layer, because the color conversion layer sets up to the arc, can live the luminous chip parcel for the blue light energy of luminous chip outgoing is by the color conversion layer complete conversion, avoids crosstalking to adjacent position from this, need not additionally set up the light filtering structure again simultaneously.

According to the seventh utility model, the scattering layer is generally provided in the same shape as the color conversion layer, and the surface of the scattering layer facing the light emitting chip side and the surface of the scattering layer facing away from the light emitting chip side are both arcs.

According to the eighth utility model, a plurality of microstructures are distributed in the color conversion layer, and the outgoing light of the light emitting chip is incident to the microstructures, and the propagation direction changes randomly, thereby reducing the total reflection effect. In addition, the microstructures are distributed in the color conversion layer, so that the refractive index of the color conversion layer is reduced, the refractive index difference between the color conversion layer and an adjacent film layer is reduced, total reflection is reduced, and the light emergence efficiency is improved. The microstructure adopts a through hole, a blind hole or a hollow structure.

According to the ninth utility model, the color conversion substrate further includes: and a filter layer. The filter layer is positioned between the accommodating unit and the color conversion layer; the filter layer is used for filtering blue light to transmit red light and green light, so that red light or green light emitted by the color conversion layer in an excited mode can be emitted, and the blue light which is not completely converted is filtered, and light crosstalk is avoided. And the blue light emitted by the light-emitting chip cannot enter the adjacent accommodating units due to the filter layer, so that the light crosstalk can be avoided. By adopting the structure of the filter layer, the color conversion substrate and the driving substrate can be completely attached without a certain distance between the color conversion substrate and the driving substrate, so that the overall thickness of the display device is reduced, and the light and thin design of the display device is facilitated.

According to the tenth utility model discloses think, after setting up the filter layer in the color conversion base plate, not too much restriction to the thickness of color conversion layer, can suitably attenuate the thickness of color conversion layer, can not take place the problem of optical crosstalk because of the blue light that is not converted can be filtered by the filter layer.

According to the eleventh embodiment, the filter layer may be a bragg reflector or a fabry-perot resonator.

According to the twelfth utility model, the display device further includes: and a reflective layer. The reflecting layer is positioned on one side of the driving substrate close to the light emitting chip and comprises a plurality of openings used for exposing the light emitting chip. Due to the arrangement of the filter layer, the imprinting layer of the color conversion substrate can be directly contacted with the reflecting layer, so that the thickness of the display device is reduced. The containing unit of the imprinting layer has an overlapped area in the orthographic projection of the driving substrate and the orthographic projection of the reflecting layer on the driving substrate, so that light rays which can be emitted or reflected to one side of the driving substrate are reflected to the light emitting side of the display device by the reflecting layer, and the utilization efficiency of the light rays is improved.

While the preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the appended claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the scope of the invention.

It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and their equivalents, the present invention is also intended to include such modifications and variations.

Claims

1. A display device, comprising:

a driving substrate for providing a driving signal;

a base material disposed opposite to the driving substrate;

the imprinting layer is positioned on one side, facing the driving substrate, of the base material; the imprinting layer comprises a plurality of accommodating units which are sunken towards one side of the base material; the light emitting side of one light emitting chip is correspondingly provided with one accommodating unit;

2. The display device according to claim 1, wherein a depth of the containing unit at a middle position is greater than a depth of the containing unit at an edge position.

3. The display device according to claim 2, wherein a surface of a side of the accommodating unit facing the light emitting chip is arc-shaped;

the surface of one side, facing the light emitting chip, of the color conversion layer and the surface of one side, facing away from the light emitting chip, of the color conversion layer are both arc-shaped.

4. The display device of claim 3, wherein the color conversion layer has a plurality of microstructures distributed therein.

5. The display device according to any one of claims 1 to 4, wherein the light emitting chip is configured to emit blue light; the color conversion layer includes: a red conversion layer and a green conversion layer;

the light emitting chip is a blue light Micro LED chip;

the color conversion layer is a quantum dot layer; the red conversion layer is a red quantum dot layer, and the green conversion layer is a green quantum dot layer.

6. The display device of claim 5, wherein the color conversion substrate further comprises:

a filter layer between the receiving unit and the color conversion layer; the filter layer is used for filtering blue light and transmitting red light and green light;

a diffusion layer in the receiving unit where the color conversion layer is not disposed; the surface of one side, facing the light-emitting chip, of the scattering layer and the surface of one side, deviating from the light-emitting chip, of the scattering layer are both arc-shaped.

7. The display device according to claim 6, wherein the light emitting chips are arranged in an array; the accommodating units of the imprinting layer are arranged in an array;

the red conversion layer, the green conversion layer and the scattering layer are repeatedly arranged in the accommodating unit according to a set sequence; and the adjacent red conversion layer and the corresponding light-emitting chip, the green conversion layer and the corresponding light-emitting chip, and the scattering layer and the corresponding light-emitting chip form a pixel unit.

8. The display device according to claim 6, wherein the filter layer employs a bragg reflective layer; the Bragg reflection layer comprises a first medium layer and a second medium layer which are alternately stacked, and the thickness and the refractive index of the first medium layer and the second medium layer meet the condition that blue light is reflected and red light and green light is transmitted;

or the filter layer adopts a resonant cavity; the resonant cavity includes: the two dielectric layers are oppositely arranged, and the distance between the two dielectric layers meets the condition that blue light is filtered to transmit red light and green light;

or the filter layer adopts a chemical film; the chemical film is used to absorb blue light and transmit red and green light.

9. The display device of claim 6, further comprising:

the reflecting layer is positioned on one side of the driving substrate close to the light-emitting chip; the reflecting layer comprises a plurality of openings for exposing the light emitting chips;

the imprinting layer is in direct contact with the reflective layer.

10. The display device of claim 9, wherein an overlap region exists between an orthographic projection of the receiving unit of the imprinting layer on the driving substrate and an orthographic projection of the reflective layer on the driving substrate.