CN111244755A - Infrared laser with medium optical microcavity embedded with black phosphorus and preparation method thereof - Google Patents
Infrared laser with medium optical microcavity embedded with black phosphorus and preparation method thereof Download PDFInfo
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
Abstract
The invention discloses an infrared laser with a medium optical microcavity embedded with black phosphorus and a preparation method thereof. The structure sequentially comprises a substrate, a bottom medium Bragg reflector, a bottom medium cavity layer, a black phosphorus two-dimensional material, a top medium cavity layer and a top medium Bragg reflector from bottom to top. Wherein the bottom layer medium Bragg reflector and the top layer medium Bragg reflector are formed by alternately growing high-refractive index materials which are penetrated by radiation wave bands; the bottom layer and the top layer medium cavity layer are also materials through which radiation wave bands penetrate; the optical gain material is a Black Phosphorus (BP) two-dimensional material. The preparation method of the dielectric Bragg reflector and the dielectric cavity layer can adopt methods such as magnetron sputtering, electron beam evaporation and the like. The black phosphorus two-dimensional material embedded micro-cavity laser has a series of advantages of infrared band emission, single mode, low threshold value, capability of working at room temperature and the like, and has good application prospects in spectroscopy, optical communication, signal processing, high-flux sensing and integrated optical systems.
Description
Technical Field
The invention relates to the field of micro-nano optical devices, in particular to a medium wave infrared micrometer laser based on a medium optical microcavity.
Technical Field
Because of good application prospects in optical communication, signal processing, high-flux sensing and integrated optical subsystems, miniaturized coherent lasers are of great interest. The 3-5 μm infrared laser is a window band of the atmosphere, and the absorption of the atmosphere in the band is very weak, so that the penetration capability of the laser is very strong. The laser in the waveband has important application value and prospect in the fields of spectroscopy, remote sensing, medical environmental protection, military and the like, such as air pollution monitoring, CO/NOx/HF/CH4 detection, industrial process control, disease detection, laser spectroscopy research, material processing, photoelectric measurement and free space communication missile imaging tracking and positioning, infrared countermeasures and anti-terrorism and the like.
At present, there are many ways to realize medium-wave infrared lasing, such as solid gas laser, chemical laser, fiber laser, optical parametric oscillator, and quantum cascade laser which opens up new field of semiconductor laser. A conventional solid-state laser is a laser using a doped glass, crystal, optical fiber, or other solid material as a working substance. The solid laser has the advantages of compact, small, firm and flexible structure, and especially the fully-solidified solid laser of the semiconductor pump can easily output pulse laser with high repetition frequency and high peak power, but the cooling device (water cooling and the like) required by the solid laser limits the volume and the like due to larger heat productivity, and the conversion efficiency is relatively low. The infrared gas laser mainly uses CO2As a gain medium, CO2The laser has the characteristics of high power, small volume, long service life and low light-emitting quality. The chemical laser has large output energy and good beam quality, but the output energy is distributed in a wider spectral range due to the staggered lamination of different rotary transition stimulated radiations, toxic chemical byproducts can be generated, and the consumption cost is highA noble gas. The optical fiber laser has the advantages that the optical fiber laser is of a waveguide structure and is easy to couple with an optical fiber. Compared with the traditional solid and gas laser, the fiber laser has good beam quality, small volume, high conversion efficiency and good heat dissipation effect, but the purity of the prepared sulfide fiber becomes a bottleneck restricting the development of the sulfide fiber, and the sulfide fiber is prevented from being used in the infrared fiber laser in a large range. In addition, the current sulfide glass materials are also poor in mechanical and thermal stability.
The infrared optical parametric oscillator has higher conversion efficiency, and the prior ZnGeP2The (ZGP) crystal is the most suitable crystal material, but the pump wavelength is strongly absorbed by ZGP at less than 2 μm, causing high temperature and damaging the laser, while the pump light source exceeding 2 μm is less at present, so the pump light source is a problem hindering the development. Quantum cascade lasers, which are a new field of semiconductor lasers, are widely researched by people as the light-emitting waveband of the quantum cascade laser covers two atmospheric windows. However, the heat loss of the active region is a bottleneck limiting the continuous operation at room temperature, and the complicated structure is also a reason why the active region cannot be widely applied. Therefore, how to obtain an infrared band laser with good working thermal stability, higher emitted light quality, low threshold, less pollution, easy pumping and continuous working at normal temperature through a simpler structure and a simpler preparation process is always a research hotspot and difficulty.
In general, light guided in a semiconductor nanowire or nanoribbon will be amplified when the round-trip loss can be compensated by the round-trip gain supported by the feedback of the end-face reflection. However, the round-trip loss is typically very large, caused by low reflectivity at the facet and large transmission losses due to surface scattering and self-absorption, which results in a higher lasing threshold for the microlaser. Therefore, researchers have proposed several strategies to lower the lasing threshold by reducing the round-trip loss.
In 2012, Teng Qiu et al used metal surface plasmons to localize scattered light at the surface of CdS and GaN nanostructure cavities in order to reduce scattering losses so that their laser threshold can be significantly reduced. (NanoEnergy.2012(1): 25-41)
2013, Pengfei Guo et al utilized symmetrical CdSxSe1-xThe nanowires serve to minimize optical loss due to self-absorption in nanowire lasers, with a several-fold reduction in laser threshold compared to conventional compositionally uniform nanostructures. (Nano Lett.2013(13): 1251-1256)
Resonance generation in a nanowire or nanoribbon cavity formed by end-facet reflection requires that the optical path of the cavity be equal to an integer multiple of one-half of the resonant wavelength to form a standing wave, typically supporting multimode lasing. Multimode laser emission can lead to temporal pulse broadening and false signals due to group velocity dispersion, which is undesirable in digitized optical communications and signal processing. This can be largely avoided using single mode lasers due to high monochromaticity and stability. One can obtain a single-mode semiconductor nanostructured laser by shortening the length of the laser cavity to extend the mode pitch until the pitch is larger than the bandwidth of the optical gain. However, reducing the cavity length may result in a sharp increase in the lasing threshold due to the reduction in round-trip gain. Therefore, the realization of low-threshold single-mode laser is one of the most important problems in the practical application of the micrometer laser. While laterally and axially coupled nanowire cavities offer a promising approach to single mode lasing with significantly reduced lasing threshold, they involve difficult micro-operations or complex fabrication processes, which present disadvantages in practical applications.
Based on numerical simulations, l.chen et al propose that single mode laser can be obtained by forming DBR mirrors at both ends of a single GaN nanowire, where a high reflectivity DBR can reduce cavity loss, thereby reducing the laser threshold. However, it remains a challenge to experimentally implement semiconductor nanostructured single mode lasers with ultra-low lasing thresholds in the infrared region. (appl.Phys.Lett.2006(89):053125)
Disclosure of Invention
The invention provides a microcavity embedded black phosphorus two-dimensional material laser and a preparation method thereof, wherein the laser consists of a substrate 1, a bottom dielectric Bragg reflector 2, a bottom compensation dielectric cavity layer 3, a black phosphorus two-dimensional material 4, a top compensation dielectric cavity layer 5 and a top dielectric Bragg reflector 6, as shown in the attached figure 2. The stable laser output with low threshold and no pollution of an infrared band at normal temperature is realized through a simple microcavity structure, and the problem of complex structure of a conventional laser is solved. The laser emission band of the black phosphorus two-dimensional material embedded in the microcavity is in the infrared region of 0.8-4.0 μm, and the emission spectrum is shown in figure 1. The thick nano material not only can be used as an optical gain medium, but also can be used as a part of an optical resonant cavity, and after the end face of the nano material is reflected, when the optical path of the round micro cavity is integral multiple of the wavelength, optical resonance can occur, so that multimode lasing can be caused. In general, the optical power is amplified when the round-trip loss of the end-face reflection can be compensated by the round-trip gain. However, due to low reflection, high transmission, surface scattering loss and self-absorption of the end face of the thick-scale nano material, the round-trip loss of light is usually large, which makes the laser threshold value often high when the pure nano material is used as a resonant cavity. The nano material is embedded in the optical microcavity with a high quality factor, and the axial end face reflection of the nano material is enhanced by utilizing the characteristic of high reflection of the DBR, so that the transmission loss is reduced, and the excitation threshold is reduced to realize low-threshold lasing.
The inventive laser structure comprises the following parts:
the substrate 1 serves as a support. The material can be selected from Si, Ge, ZnS and gem
The bottom dielectric Bragg reflector 2 and the top dielectric Bragg reflector 6 are used as two reflecting end faces of the laser and are formed by alternately growing materials with high refractive index and low refractive index for a certain period number, and the materials are combinations of Si and SiO, Ge and ZnS, Si and ZnS or Ge and SiO materials.
The bottom compensating dielectric cavity layer 3 and the top compensating dielectric cavity layer 5 act as a laser resonator to resonate. The material which is transparent in the light-emitting wave band of the black phosphorus two-dimensional material (4) is adopted.
And the black phosphorus two-dimensional material 4 is used as an optical gain medium. The fluorescence peak position of the black phosphorus can be continuously changed from 0.82-4.1 μm along with the change of the thickness of the black phosphorus, and the corresponding laser wavelength can also be continuously changed from 0.8-11.2 μm.
The laser structure utilizes an optical resonant cavity formed between a bottom-layer DBR and a top-layer DBR, only light with specific wavelength can resonate in the resonant cavity, and due to the high-reflection characteristic of the DBR, the light gains back and forth in a microcavity formed by a medium and a nano material to form laser emission. The lasing wavelength can be adjusted by changing the thickness of the bottom dielectric cavity layer or the top dielectric cavity layer.
The design principle of the dielectric Bragg reflector is as follows:
1) and selecting a material. According to the light-emitting waveband of the optical gain material, high-refractive-index and low-refractive-index dielectric materials which are weakly absorbed in the waveband are selected as a dielectric cavity and DBR (distributed Bragg reflector) high-refractive-index and low-refractive-index materials, the larger the difference between the refractive indexes of the high-refractive-index and low-refractive-index materials is, the better the difference is, on one hand, the photon forbidden band can be widened, on the other hand, the size of the whole device can be ensured to be as small as possible, and the materials can be Ge2、Al2O3、AsS3、CaF2、BaF2Etc.;
2) a reference wavelength is selected. And in the light-emitting waveband of the nano material, selecting the wavelength lambda near the peak value of the emission spectrum as a reference wavelength, wherein the fluorescence emitted by the nano material can be ideally matched with the DBR.
3) The optical thickness is determined. The optical thicknesses of the high index material and the low index material are both 1/4 of the selected DBR reference wavelength, thus achieving a bragg mirror.
Dielectric Bragg Reflector (DBR) technology is derived from multilayer film optical fabrication technology. The film system is formed by alternately growing high-refractive index materials and low-refractive index materials, and growing lambda/4 optical thicknesses on each layer of thin film to form a high-reflection effect near lambda. We apply the concepts of normal impedance and optical finite admittance and transmission matrix to understand the spectral change of the trans-reflection of planar light waves in a thin film of a layered medium. The normal impedance is defined as the ratio of the normal component of the electric field to the normal component of the magnetic field of the planar electromagnetic wave at the boundary plane, and the optical effective admittance is the reciprocal thereof.
When a planar electromagnetic wave passes through a single-layer film, the electric field strength and the magnetic field strength can be expressed as:
in the formula E0And H0Normal components of the electric and magnetic fields, E, of the 0 th surface (vacuum or air), respectively2And H2Normal components of the 2 nd surface electric and magnetic fields, respectively. y is1Is the optically effective admittance of the first film,
is the phase propagation factor of the first layer of film,
characteristic transmission matrix called layer 1, having
The characteristic transmission matrix for the j-th layer.
For film system n0|(HL)N|nGWhen the light is vertically incident, the light is emitted,
at this time, if
Then
At this time, it can calculate
When in use
As N approaches infinity, the reflectivity of the thin film approaches 1, known as a dielectric bragg mirror (DBR), which can exceed that of a metal mirror.
The light of the infrared band emitted by the nano material under the excitation of the pump forms reciprocating end reflection between the DBRs, and only the electric field of the light with the specific wavelength can resonate in the cavity, and the light with the specific wavelength gains back and forth in the cavity and finally exits perpendicular to the end face.
The invention discloses an infrared band micrometer laser with a microcavity embedded nano material, which is prepared by the following steps:
1) the nano material can be prepared by a chemical synthesis method and CVD.
2) And (3) exciting the nano material by using a pump, testing the fluorescence of the nano material by using a spectral instrument, and determining the emission peak position.
3) According to the luminescent peak position of the nano material, a film system is designed, and a substrate 1, a bottom medium Bragg reflector 2, a bottom medium cavity layer 3, a black phosphorus two-dimensional material 4, a top medium cavity layer 5 and a top medium Bragg reflector 6 (shown in an attached figure 2) are arranged from bottom to top in sequence. And designing a dielectric Bragg reflector. The resonance peak position is adjusted by adjusting the optical thickness of the medium cavity layer, so that the resonance peak position is consistent with the lasing peak position of the black phosphorus two-dimensional material.
4) Growing a bottom layer medium cavity layer, preparing a Bragg reflector and a bottom layer medium cavity layer (as shown in figure 3a) with alternating bottom layer high-low refractive index materials by an evaporation or sputtering method according to a film system design result, and preparing the Bragg reflector and the bottom layer medium cavity layer by adopting methods such as magnetron sputtering, electron beam evaporation, dual ion beam sputtering and the like.
5) Transferring the prepared black phosphorus two-dimensional material to the bottom medium cavity layer (as shown in figure 3 b);
6) growing a top dielectric cavity layer, preparing a top compensation dielectric cavity layer and a top dielectric Bragg reflector with high refractive index and low refractive index alternately by an evaporation or sputtering method according to a film system design result (as shown in figure 3c), and preparing by methods such as magnetron sputtering, electron beam evaporation, dual ion beam sputtering and the like.
7) The preparation is completed and the laser characteristics are tested and characterized.
By adopting the technical scheme, the invention has the following advantages:
1) simple structure easily prepares, is favorable to future batch production.
2) The prepared laser has an emission band of about 0.82-4.1 μm and can continuously work at room temperature, so that the problem of difficulty in working at room temperature of the conventional quantum cascade laser is solved, the vacancy of the infrared band laser is filled, and the laser has important significance in various fields such as spectroscopy, remote sensing, medical treatment, environmental protection, military and the like.
3) The micro-cavity embedded nano material laser has single mode characteristic. In optical communication and signal processing applications, errors and the like often occur in multimode lasers due to group velocity dispersion. The micron laser disclosed by the invention is single-mode lasing and is very suitable for being applied to optical communication and signal processing.
4) And the microcavity embedded nano material laser has low threshold characteristics. After the medium Bragg reflector structure is adopted, the end surface loss is reduced, and the threshold value of the micron laser is lower than that of the laser without the medium Bragg reflector structure by more than one order of magnitude. The low threshold emission can protect the nano material from being damaged by pumping, so that the nano laser light source has more stable output and longer service life.
5) The wavelength of the micrometer laser can be adjusted. The thickness of the optical resonant cavity can be adjusted by adjusting the thickness of the bottom dielectric cavity layer, the top dielectric cavity layer or the nanobelt, so that the wavelength of resonant light can be adjusted within the range of the emission peak of the nanomaterial, and the adjustment of the output lasing wavelength is realized.
6) The micro lasers may be integrated. Because the micron laser structure adopts a dielectric film and a two-dimensional material, the micron laser structure can be easily integrated in a photonic device or an optical path and can also be applied as an optical amplifier.
Drawings
FIG. 1 shows the emission spectrum of the embedded black phosphorus two-dimensional material in example 1.
FIG. 2 is a schematic structural diagram of a micro-cavity embedded black phosphorus two-dimensional material micro-laser.
FIG. 3 is a flow chart of a black phosphorus two-dimensional material laser construction.
FIG. 4 is the laser transmission spectrum of example 1.
FIG. 5 shows the emission spectra of the laser in example 1 at different powers.
Fig. 6 shows the light emission intensity of the laser in example 1 at different pump powers.
FIG. 7 shows the emission spectrum of the embedded black phosphorus two-dimensional material in example 2.
FIG. 8 is the cavity transmission spectrum of the microlaser in example 2.
FIG. 9 shows the emission spectrum of the embedded black phosphorus two-dimensional material in example 3.
FIG. 10 is the cavity transmission spectrum of the microlaser in example 3.
Detailed Description
In order to make the contents, technical solutions and advantages of the present invention more apparent, the present invention is further described below with reference to specific examples, which are only used for illustrating the present invention, and the present invention is not limited to the following examples. The following detailed description of embodiments of the invention refers to the accompanying drawings in which:
example 1:
the Si sheet is a substrate, a medium Bragg reflector, a medium cavity layer and a transfer black phosphorus two-dimensional material are plated on the surface of the Si sheet, and then the performance of the micrometer laser is tested. The specific implementation steps are as follows:
1. and preparing the black phosphorus two-dimensional material. And putting the Si substrate into a Chemical Vapor Deposition (CVD) device, and preparing the black phosphorus two-dimensional material by gold catalysis.
2. The prepared black phosphorus two-dimensional material is characterized, the Photoluminescence (PL) spectrum characteristic (shown as figure 1) is determined, and the luminescence peak position is tested to be 3.4-3.8 mu m. Its physical thickness, refractive index, etc. are determined.
3. According to the luminescent peak position of the nano material, a film system structure (as shown in figure 2) is designed, and a substrate 1, a bottom medium Bragg reflector 2, a bottom medium cavity layer 3, a black phosphorus two-dimensional material 4, a top medium cavity layer 5 and a top medium Bragg reflector 6 are sequentially arranged from bottom to top. The bottom and top DBRs are designed according to the design rules of the dielectric Bragg reflector. The resonance peak position is adjusted by adjusting the optical thickness of the upper and lower compensation medium cavity layers, so that the resonance peak position is consistent with the lasing peak position of the black phosphorus two-dimensional material.
4. And (5) cleaning the substrate. And (3) putting the double-polished Si wafer into alcohol for ultrasonic treatment for 10 minutes to remove stains on the surface of the substrate, quickly taking out after the ultrasonic cleaning is finished, drying the wafer by using nitrogen, and putting the wafer into a high-vacuum optical coating machine chamber.
5. And plating a bottom DBR and a bottom compensation medium cavity layer according to the design result of the film system. Placing the substrate in a high vacuum coating system, and vacuumizing the chamber to 10 DEG-5Pa, the coating temperature is 150 ℃, firstly coating a DBR film system:
SiO/Si/SiO/Si/SiO/Si/SiO/Si/SiO/Si；
then plating a medium cavity layer SiO;
and taking out the sample when the temperature in the cavity is reduced to be below 80 ℃.
6. And preparing the prepared black phosphorus two-dimensional material before transferring on the bottom compensation medium cavity.
7. And plating a top dielectric cavity layer and a top DBR according to the design result of the film system. Putting the sample in a high vacuum coating system, and vacuumizing to 10 DEG-5Pa, and the coating temperature is 150 ℃.
Plating a medium cavity layer: SiO;
then plating a DBR film system: Si/SiO/Si/SiO/Si/SiO/Si/SiO/Si/SiO;
and taking out the sample when the temperature in the cavity is reduced to be below 80 ℃.
8. And (5) testing the performance of the sample. The sample transmission spectrum was measured using a spectroscopic instrument, as shown in FIG. 4. The photoluminescence spectrum of the sample was tested as shown in figure 5. The lasing wavelength of the sample was 3.6 μm. Fig. 6 shows the luminous intensity of the device under different pump powers, and a typical S-shaped emission curve can illustrate the generation of the lasing phenomenon.
Example 2:
the sapphire sheet is a substrate, a medium Bragg reflector, a medium cavity layer and a transfer black phosphorus two-dimensional material are plated on the surface of the sapphire sheet, and then the performance of the micron laser is tested. The specific implementation steps are as follows:
1. and preparing the black phosphorus two-dimensional material. The sapphire substrate is placed into a Chemical Vapor Deposition (CVD) device, and the black phosphorus two-dimensional material is prepared through gold catalysis.
2. The prepared black phosphorus two-dimensional material is characterized, the Photoluminescence (PL) spectrum characteristic (shown in figure 7) is determined, and the luminescence peak position is tested to be 0.82 mu m. Its physical thickness, refractive index, etc. are determined.
3. According to the luminescent peak position of the nano material, a film system structure (as shown in figure 2) is designed, and a substrate 1, a bottom medium Bragg reflector 2, a bottom medium cavity layer 3, a black phosphorus two-dimensional material 4, a top medium cavity layer 5 and a top medium Bragg reflector 6 are sequentially arranged from bottom to top. The bottom and top DBRs are designed according to the design rules of the dielectric Bragg reflector. The resonance peak position is adjusted by adjusting the optical thickness of the upper and lower compensation medium cavity layers, so that the resonance peak position is consistent with the lasing peak position of the black phosphorus two-dimensional material.
4. And (5) cleaning the substrate. And (3) putting the double-throw sapphire sheet into alcohol for ultrasonic treatment for 10 minutes to remove stains on the surface of the substrate, quickly taking out the double-throw sapphire sheet after the ultrasonic cleaning is finished, drying the double-throw sapphire sheet by using nitrogen, and putting the double-throw sapphire sheet into a chamber of a high-vacuum optical coating machine.
5. And plating a bottom DBR and a bottom compensation medium cavity layer according to the design result of the film system. Placing the substrate in a high vacuum coating system, and vacuumizing the chamber to 10 DEG-5Pa, coating temperature is 150 ℃, first depositing a bottom DBR:
SiO2/Ta2O5/SiO2/Ta2O5/SiO2/Ta2O5/SiO2/Ta2O5/SiO2/Ta2O5/SiO2/Ta2O5/SiO2/Ta2O5/；
then depositing bottom dielectric cavity layer SiO2；
And taking out the sample when the temperature in the cavity is reduced to be below 80 ℃.
6. And preparing the prepared black phosphorus two-dimensional material before transferring on the bottom compensation medium cavity.
7. And plating a top dielectric cavity layer and a top DBR according to the design result of the film system. Putting the sample in a high vacuum coating system, and vacuumizing to 10 DEG-5Pa, and the coating temperature is 150 ℃.
Plating a medium cavity layer: SiO 22；
Then plating a DBR film system: ta2O5/SiO2/Ta2O5/SiO2/Ta2O5/SiO2/Ta2O5/SiO2/Ta2O5/SiO2/Ta2O5/SiO2/Ta2O5/SiO2；
And taking out the sample when the temperature in the cavity is reduced to be below 80 ℃.
8. And (5) testing the performance of the sample. As shown in FIG. 8, the laser mode is designed to be 0.82 μm, which is consistent with the emission peak position of the black phosphorus two-dimensional material, and the emission is suppressed in a certain range of wave band around the central emission peak position of 0.82 μm.
Example 3:
in the embodiment, germanium is used as a substrate, a medium Bragg reflector, a medium cavity layer and a transfer black phosphorus two-dimensional material are plated on the surface of the germanium, and then the performance of the micrometer laser is tested. The specific implementation steps are as follows:
1. and preparing the black phosphorus two-dimensional material. The germanium substrate is placed into a Chemical Vapor Deposition (CVD) device, and the black phosphorus two-dimensional material is prepared through gold catalysis.
2. The prepared black phosphorus two-dimensional material is characterized, the Photoluminescence (PL) spectrum characteristic (shown in figure 9) is determined, and the luminescence peak position is tested to be 4.1 mu m. Its physical thickness, refractive index, etc. are determined.
3. According to the luminous peak position of the black phosphorus two-dimensional material, a film system structure (as shown in figure 2) is designed, and a substrate 1, a bottom medium Bragg reflector 2, a bottom medium cavity layer 3, a black phosphorus two-dimensional material 4, a top medium cavity layer 5 and a top medium Bragg reflector 6 are arranged from bottom to top in sequence. The bottom and top DBRs are designed according to the design rules of the dielectric Bragg reflector. The resonance peak position is adjusted by adjusting the optical thickness of the upper and lower compensation medium cavity layers, so that the resonance peak position is consistent with the lasing peak position of the black phosphorus two-dimensional material.
4. And (5) cleaning the substrate. And (3) putting the double-polished Ge sheet into alcohol for ultrasonic treatment for 10 minutes to remove stains on the surface of the substrate, quickly taking out the double-polished Ge sheet after the ultrasonic cleaning is finished, drying the double-polished Ge sheet by using nitrogen, and putting the double-polished Ge sheet into a chamber of a high-vacuum optical coating machine.
5. And plating a bottom DBR and a bottom compensation medium cavity layer according to the design result of the film system. Placing the substrate in a high vacuum coating system, and vacuumizing the chamber to 10 DEG-5Pa, coating temperature is 150 ℃, first depositing a bottom DBR:
ZnS/Ge/ZnS/Ge/ZnS/Ge/ZnS/Ge/ZnS/Ge/ZnS/Ge；
then depositing a bottom layer medium cavity layer ZnS;
and taking out the sample when the temperature in the cavity is reduced to be below 80 ℃.
6. And preparing the prepared black phosphorus two-dimensional material before transferring on the bottom compensation medium cavity.
7. And plating a top dielectric cavity layer and a top DBR according to the design result of the film system. Putting the sample in a high vacuum coating system, and vacuumizing to 10 DEG-5Pa, and the coating temperature is 150 ℃.
Plating a medium cavity layer: ZnS;
then plating a DBR film system: Ge/ZnS/Ge/ZnS/Ge/ZnS/Ge/ZnS/Ge/ZnS/;
and taking out the sample when the temperature in the cavity is reduced to be below 80 ℃.
8. And (5) testing the performance of the sample. As shown in figure 10, the laser mode is designed to be 4.1 μm, and is consistent with the light-emitting peak position of the black phosphorus two-dimensional material, and the light-emitting is inhibited in a wave band within a certain range around the central light-emitting peak position of 4.1 μm.
The above-mentioned embodiments are further described in detail for the purpose of illustrating the invention, the technical solutions and the advantages, it should be understood that the above-mentioned embodiments are only exemplary of the invention, and are not intended to limit the invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the invention should be included in the protection scope of the invention.
Claims (4)
1. The infrared laser with the medium optical microcavity embedded with the black phosphorus is characterized by comprising the following structures: a bottom dielectric Bragg reflector (2), a bottom compensation dielectric cavity layer (3), a black phosphorus two-dimensional material (4), a top compensation dielectric cavity layer (5) and a top dielectric Bragg reflector (6) are sequentially plated on a substrate (1).
2. The infrared laser with the black phosphorus embedded in the dielectric optical microcavity as claimed in claim 1, wherein the bottom dielectric bragg reflector (2) and the top dielectric bragg reflector (6) are formed by alternately arranging high-refractive index and low-refractive index materials which are transmitted by the black phosphorus two-dimensional material (4) in a light-emitting waveband, and the materials are Si and SiO, Ge and ZnS, Si and ZnS, Ge and SiO or Ta2O5With SiO2A combination of materials.
3. The infrared laser with the embedded black phosphorus in the dielectric optical microcavity as claimed in claim 1, wherein the bottom dielectric cavity layer (3) and the top dielectric cavity layer (2) are made of black phosphorus two-dimensional material (4) which is transparent to the light-emitting band.
4. A method of making a dielectric optical microcavity black phosphorus-embedded infrared laser according to claim 1, comprising the steps of:
1) preparing a black phosphorus two-dimensional material (4): preparing a black phosphorus two-dimensional material by a chemical synthesis method or a CVD method;
2) determining the luminous peak position of the black phosphorus two-dimensional material by a fluorescence spectrometer;
3) designing a membrane system: designing a film system according to the luminous peak position of the black phosphorus two-dimensional material, wherein the film system sequentially comprises a substrate (1), a bottom medium Bragg reflector (2), a bottom compensation medium cavity layer (3), an optical gain material (4), a top compensation medium cavity layer (5) and a top medium Bragg reflector (6) from bottom to top; designing the dielectric Bragg reflector according to the design rule of the dielectric Bragg reflector; adjusting the resonance peak position by adjusting the optical thickness of the medium cavity layer to match the light-emitting peak position of the black phosphorus two-dimensional material;
4) according to the design result of a film system, a bottom layer medium Bragg reflector (2) and a bottom layer compensation medium cavity layer (3) are prepared by an evaporation or sputtering method, and the bottom layer medium Bragg reflector and the bottom layer compensation medium cavity layer are prepared by methods such as magnetron sputtering, electron beam evaporation, double ion beam sputtering and the like;
4) transferring the black phosphorus two-dimensional material (4) onto the bottom compensation medium cavity layer (3);
5) according to the design result of a film system, a top layer compensation medium cavity layer (5) and a top layer medium Bragg reflector (6) are prepared on the transferred black phosphorus two-dimensional material by an evaporation or sputtering method, and the top layer compensation medium cavity layer and the top layer medium Bragg reflector are prepared by magnetron sputtering, electron beam evaporation and a double-ion-beam sputtering method.
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| CN113659432A (en) * | 2021-08-10 | 2021-11-16 | 湖南大学 | Small-size surface-emitting near-infrared laser and preparation method thereof |
| CN114975863A (en) * | 2022-08-01 | 2022-08-30 | 深圳市汉嵙新材料技术有限公司 | Black phosphorus cathode, preparation method thereof and lithium ion battery |
| CN116979371A (en) * | 2023-07-21 | 2023-10-31 | 深圳技术大学 | TMDC laser structure and manufacturing method thereof |
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