WO2022141856A1 - Aluminum nitride nanowire-based laser - Google Patents

Aluminum nitride nanowire-based laser Download PDF

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WO2022141856A1
WO2022141856A1 PCT/CN2021/083597 CN2021083597W WO2022141856A1 WO 2022141856 A1 WO2022141856 A1 WO 2022141856A1 CN 2021083597 W CN2021083597 W CN 2021083597W WO 2022141856 A1 WO2022141856 A1 WO 2022141856A1
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laser
aluminum nitride
nanowire
nitride nanowire
substrate
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PCT/CN2021/083597
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French (fr)
Chinese (zh)
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王英
叶佳慧
廖常锐
王义平
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深圳大学
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/107—Subwavelength-diameter waveguides, e.g. nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length

Definitions

  • the invention relates to the technical field of lasers, in particular to a laser based on aluminum nitride nanowires.
  • Nanowire lasers are very popular in applications such as data storage, medical, biological, and chemiluminescence sensing.
  • the nanowires are CdS (cadmium sulfide), ZnO (zinc oxide), GaN (gallium nitride), and the radiation wavelength of nanowire lasers has covered the range of near-ultraviolet to visible light. Due to the advantages of high breakdown electric field, thermal conductivity, and electron mobility, these wide-bandgap semiconductor materials have great development potential in the fields of high temperature, high frequency, radiation resistance and short-wavelength light emission.
  • the band gap of CdS is 2.45eV, the corresponding emission wavelength is 507nm; the band gap of ZnO is 3.2eV, the corresponding emission wavelength is 390nm; the band gap of GaN is 3.4eV, the corresponding emission wavelength is 364nm.
  • the stimulated emission of semiconductor nanowires under optical pumping usually uses a shorter wavelength pump light to achieve linear optical pumping, which largely limits the output wavelength range and application of nanowire lasers.
  • the technology can only realize the laser output of UV-A (output wavelength 315-400nm) and UV-B (280-315nm), and it is difficult to realize the laser output below 280nm.
  • the present invention proposes a laser based on aluminum nitride nanowires, comprising a substrate and a single aluminum nitride nanowire disposed on the substrate; the aluminum nitride nanowires Parallel to the substrate, a Fabry-Perot resonant cavity is formed between the two end faces of the aluminum nitride nanowire.
  • the laser further includes a femtosecond laser excitation source.
  • the end face of the aluminum nitride nanowire has a grating structure.
  • the end face of the aluminum nitride nanowire has a coating layer.
  • the femtosecond laser is an ultraviolet femtosecond laser
  • the laser is a solar-blind ultraviolet laser
  • the wavelength of the ultraviolet femtosecond laser is greater than 200 nm and less than 400 nm.
  • the repetition frequency of the femtosecond laser is adjustable from 1 kHz to 200 kHz.
  • the substrate is a MgF 2 substrate.
  • the diameter of the aluminum nitride nanowires is 0.05-1000 ⁇ m.
  • the length of the aluminum nitride nanowires is 10-5000 ⁇ m.
  • a laser based on aluminum nitride nanowires proposed by the present invention adopts a single aluminum nitride nanowire as a gain medium, and forms a Fabry-Perot resonant cavity between the two end faces of the aluminum nitride nanowire, so that the The aluminum nitride nanowire serves as the gain medium and the resonant cavity of the laser at the same time;
  • the nanowire of the present application is an aluminum nitride nanowire, and the aluminum nitride has an ultra-wide band gap of 6.2 eV, which is beneficial to realize the laser output below 280 nm.
  • FIG. 1 is a schematic diagram of an aluminum nitride nanowire-based laser according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram of a Fabry-Perot resonator of an aluminum nitride nanowire-based laser according to an embodiment of the present invention.
  • Substrate (1) aluminum nitride nanowires (2), femtosecond laser (3), left end surface (5), right end surface (4).
  • first and second are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature delimited with “first”, “second” may expressly or implicitly include at least one of that feature.
  • plurality means at least two, such as two, three, etc., unless otherwise expressly and specifically defined.
  • FIG. 1 is a schematic structural diagram of an aluminum nitride nanowire-based laser according to an embodiment of the present invention.
  • an aluminum nitride nanowire-based laser proposed by the present invention includes a substrate (1) and a semiconductor nanowire disposed on the substrate (1).
  • the semiconductor nanowire of the present application is a single aluminum nitride nanowire (2).
  • the aluminum nitride nanowires (2) are arranged parallel to the substrate (1).
  • the aluminum nitride nanowire (2) has good single crystal quality, atomically smooth surface, and high refractive index, and can effectively confine light in subwavelength dimensions.
  • the end face of the aluminum nitride nanowire (2) has a certain reflectivity, so that the left end face (5) and the right end face (4) of the aluminum nitride nanowire (2) constitute two mirrors, as shown in Figure 2, in the A Fabry-Pérot (F-P, Fabry-Pérot) resonant cavity is formed between these two end faces.
  • a single aluminum nitride nanowire (2) is used as a gain medium, and the aluminum nitride has an ultra-wide band gap of 6.2eV, and the corresponding emission wavelength is 200nm-210nm, which is beneficial to realize the laser output below 280nm.
  • the laser stimulated radiation of this structure has good optical mode characteristics, and can generate high-brightness laser light, and the generated laser light is output from the end face of the aluminum nitride nanowire (2).
  • the laser also includes an excitation source, which can be electrically pumped or optically pumped.
  • the excitation source of the present application is a femtosecond laser (3).
  • the repetition rate of the femtosecond laser (3) is adjustable from 1 kHz to 200 kHz and has a very high peak power density.
  • the excitation source is an ultraviolet femtosecond laser (3), and the laser is a solar-blind ultraviolet laser.
  • the wavelength of the ultraviolet femtosecond laser is greater than 200 nm and less than 400 nm.
  • the excitation source is the pump of two-photon absorption, and the aluminum nitride nanowire (2) realizes particle number inversion and laser output through two-photon absorption.
  • Ultraviolet femtosecond laser two-photon excitation with high peak power density can effectively realize solar-blind ultraviolet laser output of aluminum nitride nanowires (2).
  • the wavelength range of the ultraviolet femtosecond laser is 210-390 nm.
  • the excitation source is a linear pump with single-photon absorption. If the wavelength of the pump femtosecond laser used is greater than 400 nm, the excitation source is nonlinear pumping with multiphoton absorption, and the efficiency is low.
  • two-photon excitation of ultraviolet femtosecond laser with high peak power density is preferably used.
  • two-photon excitation of ultraviolet femtosecond laser has a larger penetration depth, and more efficient optical coupling can be obtained. Reduce non-radiative recombination caused by nanowire surface defects and improve laser output performance.
  • Aluminum nitride (AlN) has an ultra-wide band gap of 6.2eV.
  • the photon energy of the ultraviolet femtosecond laser is 3.1eV-4.8eV, so when the femtosecond laser is used as the excitation source, the aluminum nitride nanowire (2) can absorb two femtosecond laser photons at the same time, and under the action of the external excitation source ultraviolet femtosecond laser, the electrons of the aluminum nitride nanowire (2) transition to a high energy level state and realize The number of particles is reversed to generate stimulated radiation, and the laser with the wavelength of the solar-blind ultraviolet band is emitted from the end face, which can realize the solar-blind ultraviolet laser output of about 200nm.
  • the ultraviolet laser in this band can be used in optical imaging, positioning identification, and medical detection.
  • the aluminum nitride nanowire (2) itself acts as a Fabry–Pérot (F-P, Fabry–Pérot) resonant cavity, and the stimulated emission of this structure has better optical mode characteristics under the two-photon excitation of ultraviolet femtosecond laser. , capable of generating high-brightness solar-blind UV monochromatic light, and the generated laser is output from the end face of aluminum nitride nanowires, which is very suitable for coupling into nanophotonics components, such as quantum dots, metal nanoparticles, plasmonic waveguides, and biological specimens. .
  • the aluminum nitride nanowire (2) has good surface crystallization and flat end faces, and the diameter of the aluminum nitride nanowire (2) is 0.05-1000 ⁇ m.
  • the length of the aluminum nitride nanowires (2) is 10-5000 ⁇ m.
  • a grating structure is provided on the end face of the aluminum nitride nanowire (2).
  • the grating structure is, for example, a FBG grating structure written on the end face, the purpose of which is to enhance the end face reflection and reduce the mirror loss of the aluminum nitride nanowire.
  • the light wave interacts with the metal grating as it propagates inside the nanowire and is reflected by the end face, creating a gain feedback.
  • a coating layer can also be provided on the end face of the aluminum nitride nanowire (2).
  • the plating film is, for example, a gold film.
  • the grating structure and coating are not limited to this.
  • a coating film and a grating can be provided on the end face at the same time, and the grating can be engraved on the end face first, and then the coating film can be formed.
  • the substrate (1) of the specific embodiment of the present application is preferably a MgF2 substrate (1).
  • MgF2 is a low refractive index crystal, which can effectively prevent the leakage of optical signals.
  • the laser of the present application has a wide range of applications in the fields of quantum computing, display, lighting, biological and gas sensing, medical diagnosis, high-density storage, and material science.
  • a laser based on aluminum nitride nanowires proposed by the present invention adopts a single aluminum nitride nanowire as a gain medium, and forms a Fabry-Perot resonant cavity between the two end faces of the aluminum nitride nanowire, so that the The aluminum nitride nanowire serves as the gain medium and the resonant cavity of the laser at the same time;
  • the nanowire of the present application is an aluminum nitride nanowire, and the aluminum nitride has an ultra-wide band gap of 6.2 eV, which is beneficial to realize the laser output below 280 nm.

Abstract

An aluminum nitride nanowire (2)-based laser, comprising a substrate (1) and a single aluminum nitride nanowire (2) disposed on the substrate (1); the aluminum nitride nanowire (2) is parallel to the substrate (1), and a Fabry-Perot resonant cavity is formed between two end surfaces (3, 4) of the aluminum nitride nanowire (2). In the aluminum nitride nanowire (2)-based laser, the single aluminum nitride nanowire (2) is used as a gain medium, which is beneficial to achieving laser light output at a wavelength of less than 280 nm.

Description

一种基于氮化铝纳米线的激光器A laser based on aluminum nitride nanowires 技术领域technical field
本发明涉及激光器技术领域，特别是涉及一种基于氮化铝纳米线的激光器。The invention relates to the technical field of lasers, in particular to a laser based on aluminum nitride nanowires.
背景技术Background technique
纳米线激光器在数据存储、医疗、生物以及化学荧光传感等应用领域非常受欢迎。现有的纳米线激光器，纳米线为CdS（硫化镉）、ZnO（氧化锌）、GaN（氮化镓），纳米线激光的辐射波长已经涵盖了近紫外到可见光范围。由于这些宽禁带半导体材料具有高的击穿电场、热导率、电子迁移率等优势而在高温、高频、抗辐射以及短波长发光领域有巨大的发展潜力。Nanowire lasers are very popular in applications such as data storage, medical, biological, and chemiluminescence sensing. Existing nanowire lasers, the nanowires are CdS (cadmium sulfide), ZnO (zinc oxide), GaN (gallium nitride), and the radiation wavelength of nanowire lasers has covered the range of near-ultraviolet to visible light. Due to the advantages of high breakdown electric field, thermal conductivity, and electron mobility, these wide-bandgap semiconductor materials have great development potential in the fields of high temperature, high frequency, radiation resistance and short-wavelength light emission.
技术问题technical problem
由于CdS的禁带宽度2.45eV，对应的发光波长为507nm；ZnO的禁带宽度3.2eV，对应的发光波长为390nm；GaN的禁带宽度3.4eV，对应的发光波长为364nm。在光泵浦下半导体纳米线的受激辐射，通常都是利用更短波长的泵浦光来实现线性光学泵浦，这很大程度上限制了纳米线激光器的输出波长范围和应用，现有技术仅仅能实现UV-A(输出波长315- 400nm)、UV-B(280-315nm)的激光输出，难以实现280nm以下的激光输出。Since the band gap of CdS is 2.45eV, the corresponding emission wavelength is 507nm; the band gap of ZnO is 3.2eV, the corresponding emission wavelength is 390nm; the band gap of GaN is 3.4eV, the corresponding emission wavelength is 364nm. The stimulated emission of semiconductor nanowires under optical pumping usually uses a shorter wavelength pump light to achieve linear optical pumping, which largely limits the output wavelength range and application of nanowire lasers. The technology can only realize the laser output of UV-A (output wavelength 315-400nm) and UV-B (280-315nm), and it is difficult to realize the laser output below 280nm.
技术解决方案technical solutions
为了克服现有技术存在的问题，本发明提出了一种基于氮化铝纳米线的激光器，包括衬底、以及设置在衬底上的单根氮化铝纳米线；所述氮化铝纳米线平行于衬底，所述氮化铝纳米线的两个端面之间形成法布里-珀罗谐振腔。In order to overcome the problems existing in the prior art, the present invention proposes a laser based on aluminum nitride nanowires, comprising a substrate and a single aluminum nitride nanowire disposed on the substrate; the aluminum nitride nanowires Parallel to the substrate, a Fabry-Perot resonant cavity is formed between the two end faces of the aluminum nitride nanowire.
作为本发明提供的基于氮化铝纳米线的激光器的一种改进，所述激光器还包括飞秒激光激励源。As an improvement of the aluminum nitride nanowire-based laser provided by the present invention, the laser further includes a femtosecond laser excitation source.
作为本发明提供的基于氮化铝纳米线的激光器的一种改进，所述氮化铝纳米线的端面具有光栅结构。As an improvement of the laser based on the aluminum nitride nanowire provided by the present invention, the end face of the aluminum nitride nanowire has a grating structure.
作为本发明提供的基于氮化铝纳米线的激光器的一种改进，所述氮化铝纳米线的端面具有镀膜层。As an improvement of the laser based on the aluminum nitride nanowire provided by the present invention, the end face of the aluminum nitride nanowire has a coating layer.
作为本发明提供的基于氮化铝纳米线的激光器的一种改进，所述飞秒激光为紫外飞秒激光，所述激光器为日盲紫外激光器。As an improvement of the aluminum nitride nanowire-based laser provided by the present invention, the femtosecond laser is an ultraviolet femtosecond laser, and the laser is a solar-blind ultraviolet laser.
作为本发明提供的基于氮化铝纳米线的激光器的一种改进，所述紫外飞秒激光的波长大于200nm小于400nm。As an improvement of the laser based on aluminum nitride nanowires provided by the present invention, the wavelength of the ultraviolet femtosecond laser is greater than 200 nm and less than 400 nm.
作为本发明提供的基于氮化铝纳米线的激光器的一种改进，所述飞秒激光的重复频率为1kHz-200kHz可调。As an improvement of the laser based on aluminum nitride nanowires provided by the present invention, the repetition frequency of the femtosecond laser is adjustable from 1 kHz to 200 kHz.
作为本发明提供的基于氮化铝纳米线的激光器的一种改进，所述衬底为MgF 2衬底。 As an improvement of the laser based on aluminum nitride nanowires provided by the present invention, the substrate is a MgF 2 substrate.
作为本发明提供的基于氮化铝纳米线的激光器的一种改进，所述氮化铝纳米线的直径为0.05-1000μm。As an improvement of the laser based on aluminum nitride nanowires provided by the present invention, the diameter of the aluminum nitride nanowires is 0.05-1000 μm.
作为本发明提供的基于氮化铝纳米线的激光器的一种改进，所述氮化铝纳米线的长度为10-5000μm。As an improvement of the laser based on aluminum nitride nanowires provided by the present invention, the length of the aluminum nitride nanowires is 10-5000 μm.
有益效果beneficial effect
本发明提出的一种基于氮化铝纳米线的激光器，采用单根氮化铝纳米线作为增益介质，在氮化铝纳米线的两个端面之间形成法布里-珀罗谐振腔，使氮化铝纳米线同时作为激光器的增益介质和谐振腔；本申请的纳米线为氮化铝纳米线，氮化铝具有超宽禁带宽度6.2eV，有利于实现280nm以下的激光输出。A laser based on aluminum nitride nanowires proposed by the present invention adopts a single aluminum nitride nanowire as a gain medium, and forms a Fabry-Perot resonant cavity between the two end faces of the aluminum nitride nanowire, so that the The aluminum nitride nanowire serves as the gain medium and the resonant cavity of the laser at the same time; the nanowire of the present application is an aluminum nitride nanowire, and the aluminum nitride has an ultra-wide band gap of 6.2 eV, which is beneficial to realize the laser output below 280 nm.
附图说明Description of drawings
图1为本发明实施例的一种基于氮化铝纳米线的激光器的示意图；1 is a schematic diagram of an aluminum nitride nanowire-based laser according to an embodiment of the present invention;
图2为本发明实施例的一种基于氮化铝纳米线的激光器的法布里-珀罗谐振腔的示意图。FIG. 2 is a schematic diagram of a Fabry-Perot resonator of an aluminum nitride nanowire-based laser according to an embodiment of the present invention.
附图标记：Reference number:
衬底（1）、氮化铝纳米线（2）、飞秒激光（3）、左端面（5）、右端面（4）。Substrate (1), aluminum nitride nanowires (2), femtosecond laser (3), left end surface (5), right end surface (4).
本发明的实施方式Embodiments of the present invention
为了使本技术领域的人员更好地理解本发明方案，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分的实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本发明保护的范围。In order to make those skilled in the art better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only Embodiments are part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”、“顺时针”、“逆时针”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", " Rear, Left, Right, Vertical, Horizontal, Top, Bottom, Inner, Outer, Clockwise, Counterclockwise, Axial, The orientations or positional relationships indicated by "radial direction", "circumferential direction", etc. are based on the orientations or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying the indicated devices or elements. It must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be construed as a limitation of the present invention.
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本发明的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。In addition, the terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature delimited with "first", "second" may expressly or implicitly include at least one of that feature. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise expressly and specifically defined.
在本发明中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接或彼此可通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。In the present invention, unless otherwise expressly specified and limited, terms such as "installation", "connection", "connection", "fixation" and other terms should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection , or integrated; it can be a mechanical connection or an electrical connection or can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two components or the interaction relationship between the two components, unless otherwise expressly qualified. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.
下面通过附图和实施例，对本发明的技术方案做进一步的详细描述。The technical solutions of the present invention will be further described in detail below through the accompanying drawings and embodiments.
图1是本发明实施例的一种基于氮化铝纳米线的激光器的结构示意图。FIG. 1 is a schematic structural diagram of an aluminum nitride nanowire-based laser according to an embodiment of the present invention.
如图1所示，本发明提出的一种基于氮化铝纳米线的激光器，包括衬底（1）、以及设置在衬底（1）上的半导体纳米线。本申请的半导体纳米线为单根氮化铝纳米线（2）。其中，氮化铝纳米线（2）平行于衬底（1）设置。As shown in FIG. 1 , an aluminum nitride nanowire-based laser proposed by the present invention includes a substrate (1) and a semiconductor nanowire disposed on the substrate (1). The semiconductor nanowire of the present application is a single aluminum nitride nanowire (2). Wherein, the aluminum nitride nanowires (2) are arranged parallel to the substrate (1).
氮化铝纳米线（2）具有良好的单晶质量、原子级光滑的表面、较高的折射率，能有效的将光约束在亚波长尺寸内。氮化铝纳米线（2）的端面具有一定的反射率，使得氮化铝纳米线（2）的左端面（5）和右端面（4）构成两个反射镜，如图2所示，在这两个端面之间形成法布里-珀罗（F-P，Fabry–Pérot）谐振腔。The aluminum nitride nanowire (2) has good single crystal quality, atomically smooth surface, and high refractive index, and can effectively confine light in subwavelength dimensions. The end face of the aluminum nitride nanowire (2) has a certain reflectivity, so that the left end face (5) and the right end face (4) of the aluminum nitride nanowire (2) constitute two mirrors, as shown in Figure 2, in the A Fabry-Pérot (F-P, Fabry-Pérot) resonant cavity is formed between these two end faces.
单根氮化铝纳米线（2）作为增益介质，氮化铝具有超宽禁带宽度6.2eV，,对应的发射波长为200nm-210nm，有利于实现280nm以下的激光输出。这种结构的激光器受激辐射具有较好的光学模式特性，能够产生高亮度的激光，产生的激光从氮化铝纳米线（2）端面输出。 A single aluminum nitride nanowire (2) is used as a gain medium, and the aluminum nitride has an ultra-wide band gap of 6.2eV, and the corresponding emission wavelength is 200nm-210nm, which is beneficial to realize the laser output below 280nm. The laser stimulated radiation of this structure has good optical mode characteristics, and can generate high-brightness laser light, and the generated laser light is output from the end face of the aluminum nitride nanowire (2).
激光器还包括激励源，激励源可采用电泵浦或光泵浦方式。优选的，本申请的激励源为飞秒激光（3）。飞秒激光（3）的重复频率为1kHz-200kHz可调，具有非常高的峰值功率密度。The laser also includes an excitation source, which can be electrically pumped or optically pumped. Preferably, the excitation source of the present application is a femtosecond laser (3). The repetition rate of the femtosecond laser (3) is adjustable from 1 kHz to 200 kHz and has a very high peak power density.
作为更加优选的方案，激励源为紫外飞秒激光（3），激光器为日盲紫外激光器。紫外飞秒激光的波长大于200nm小于400nm，采用紫外飞秒激光时，激励源为双光子吸收的泵浦，氮化铝纳米线（2）通过双光子吸收实现粒子数反转和激光输出。采用高峰值功率密度的紫外飞秒激光双光子激发能够有效实现氮化铝纳米线（2）的日盲紫外激光输出。在一个具体的实施例中，紫外飞秒激光的波长范围为210-390nm。As a more preferred solution, the excitation source is an ultraviolet femtosecond laser (3), and the laser is a solar-blind ultraviolet laser. The wavelength of the ultraviolet femtosecond laser is greater than 200 nm and less than 400 nm. When the ultraviolet femtosecond laser is used, the excitation source is the pump of two-photon absorption, and the aluminum nitride nanowire (2) realizes particle number inversion and laser output through two-photon absorption. Ultraviolet femtosecond laser two-photon excitation with high peak power density can effectively realize solar-blind ultraviolet laser output of aluminum nitride nanowires (2). In a specific embodiment, the wavelength range of the ultraviolet femtosecond laser is 210-390 nm.
如将紫外飞秒激光替换成其它波长的飞秒激光，若采用的泵浦飞秒激光波长小于200nm，则激励源为单光子吸收的线性泵浦。若采用的泵浦飞秒激光波长大于400nm，则激励源为多光子吸收的非线性泵浦，效率较低。For example, if the ultraviolet femtosecond laser is replaced by a femtosecond laser of other wavelengths, if the wavelength of the pump femtosecond laser used is less than 200 nm, the excitation source is a linear pump with single-photon absorption. If the wavelength of the pump femtosecond laser used is greater than 400 nm, the excitation source is nonlinear pumping with multiphoton absorption, and the efficiency is low.
本申请实施例优选采用高峰值功率密度的紫外飞秒激光双光子激发，相较于单光子激发，紫外飞秒激光双光子激发具有更大的穿透深度，可以获得更高效的光耦合，同时减少由纳米线表面缺陷引起的非辐射复合，提升激光器的激光输出性能。In the embodiment of the present application, two-photon excitation of ultraviolet femtosecond laser with high peak power density is preferably used. Compared with single-photon excitation, two-photon excitation of ultraviolet femtosecond laser has a larger penetration depth, and more efficient optical coupling can be obtained. Reduce non-radiative recombination caused by nanowire surface defects and improve laser output performance.
氮化铝（AlN）具有超宽禁带宽度6.2eV，根据已知的光量子能量公式E=(hc/λ)，紫外飞秒激光光子能量为3.1eV-4.8eV，所以当飞秒激光作为激励源，可使氮化铝纳米线（2）同时吸收两个飞秒激光光子，在外加激励源紫外飞秒激光的作用下，氮化铝纳米线（2）的电子跃迁到高能级态并实现粒子数反转从而产生受激辐射，从端面出射波长为日盲紫外波段的激光，能实现200nm左右的日盲紫外激光输出。例如，可输出参考波长范围200-210nm的日盲紫外波段激光。从而实现了纳米线紫外激光器更深的紫外激光输出，该波段的紫外激光可以应用在光学成像、定位识别和医疗检测等方面。Aluminum nitride (AlN) has an ultra-wide band gap of 6.2eV. According to the known photon energy formula E=(hc/λ), the photon energy of the ultraviolet femtosecond laser is 3.1eV-4.8eV, so when the femtosecond laser is used as the excitation source, the aluminum nitride nanowire (2) can absorb two femtosecond laser photons at the same time, and under the action of the external excitation source ultraviolet femtosecond laser, the electrons of the aluminum nitride nanowire (2) transition to a high energy level state and realize The number of particles is reversed to generate stimulated radiation, and the laser with the wavelength of the solar-blind ultraviolet band is emitted from the end face, which can realize the solar-blind ultraviolet laser output of about 200nm. For example, it can output solar-blind ultraviolet laser with a reference wavelength range of 200-210 nm. Thus, a deeper ultraviolet laser output of the nanowire ultraviolet laser is realized, and the ultraviolet laser in this band can be used in optical imaging, positioning identification, and medical detection.
氮化铝纳米线（2）本身作为法布里-珀罗（F-P，Fabry–Pérot）谐振腔，在紫外飞秒激光双光子激发下，这种结构的受激辐射具有较好的光学模式特性，能够产生高亮度的日盲紫外单色光，产生的激光从氮化铝纳米线端面输出，非常适合耦合到纳米光子学元器件，如量子点、金属纳米颗粒、等离子体波导、生物标本中。The aluminum nitride nanowire (2) itself acts as a Fabry–Pérot (F-P, Fabry–Pérot) resonant cavity, and the stimulated emission of this structure has better optical mode characteristics under the two-photon excitation of ultraviolet femtosecond laser. , capable of generating high-brightness solar-blind UV monochromatic light, and the generated laser is output from the end face of aluminum nitride nanowires, which is very suitable for coupling into nanophotonics components, such as quantum dots, metal nanoparticles, plasmonic waveguides, and biological specimens. .
氮化铝纳米线（2）作为一种增益介质，其表面结晶良好，端面平整，作氮化铝纳米线（2）的直径为0.05-1000μm。氮化铝纳米线（2）的长度为10-5000μm。As a gain medium, the aluminum nitride nanowire (2) has good surface crystallization and flat end faces, and the diameter of the aluminum nitride nanowire (2) is 0.05-1000 μm. The length of the aluminum nitride nanowires (2) is 10-5000 μm.
作为一个优选的方案，在氮化铝纳米线（2）的端面设置有光栅结构。光栅结构例如为刻写在端面的FBG光栅结构，其目的是增强端面反射并降低氮化铝纳米线的镜面损耗。光波在纳米线内传播时与金属光栅相互作用，被端面反射，从而形成增益反馈。为了提高端面反射率、降低激射阈值、提升激光输出效率，除了在氮化铝纳米线（2）的端面设置有光栅结构，还可以在氮化铝纳米线（2）的端面设置镀膜层。镀膜例如为金膜。但可以理解的，光栅结构和镀膜并不以此为限。作为更加优选的方案，可在端面同时设置镀膜和光栅，可先在端面刻上光栅，再形成镀膜。As a preferred solution, a grating structure is provided on the end face of the aluminum nitride nanowire (2). The grating structure is, for example, a FBG grating structure written on the end face, the purpose of which is to enhance the end face reflection and reduce the mirror loss of the aluminum nitride nanowire. The light wave interacts with the metal grating as it propagates inside the nanowire and is reflected by the end face, creating a gain feedback. In order to improve the reflectivity of the end face, reduce the lasing threshold, and improve the laser output efficiency, in addition to providing a grating structure on the end face of the aluminum nitride nanowire (2), a coating layer can also be provided on the end face of the aluminum nitride nanowire (2). The plating film is, for example, a gold film. However, it can be understood that the grating structure and coating are not limited to this. As a more preferred solution, a coating film and a grating can be provided on the end face at the same time, and the grating can be engraved on the end face first, and then the coating film can be formed.
本申请具体实施例的衬底（1）优选为MgF2衬底（1）。MgF2为低折射率晶体，可以有效防止光信号的泄露。The substrate (1) of the specific embodiment of the present application is preferably a MgF2 substrate (1). MgF2 is a low refractive index crystal, which can effectively prevent the leakage of optical signals.
本申请的激光器在量子计算、显示、照明、生物以及气体传感、医疗诊断、高密度存储以及材料科学等领域都有广泛的应用。The laser of the present application has a wide range of applications in the fields of quantum computing, display, lighting, biological and gas sensing, medical diagnosis, high-density storage, and material science.
本申请具有以下有益效果：This application has the following beneficial effects:
本发明提出的一种基于氮化铝纳米线的激光器，采用单根氮化铝纳米线作为增益介质，在氮化铝纳米线的两个端面之间形成法布里-珀罗谐振腔，使氮化铝纳米线同时作为激光器的增益介质和谐振腔；本申请的纳米线为氮化铝纳米线，氮化铝具有超宽禁带宽度6.2eV，有利于实现280nm以下的激光输出。A laser based on aluminum nitride nanowires proposed by the present invention adopts a single aluminum nitride nanowire as a gain medium, and forms a Fabry-Perot resonant cavity between the two end faces of the aluminum nitride nanowire, so that the The aluminum nitride nanowire serves as the gain medium and the resonant cavity of the laser at the same time; the nanowire of the present application is an aluminum nitride nanowire, and the aluminum nitride has an ultra-wide band gap of 6.2 eV, which is beneficial to realize the laser output below 280 nm.
显然，以上所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例，附图中给出了本申请的较佳实施例，但并不限制本申请的专利范围。本申请可以以许多不同的形式来实现，相反地，提供这些实施例的目的是使对本申请的公开内容的理解更加透彻全面。尽管参照前述实施例对本申请进行了详细的说明，对于本领域的技术人员来而言，其依然可以对前述各具体实施方式所记载的技术方案进行修改，或者对其中部分技术特征进行等效替换。凡是利用本申请说明书及附图内容所做的等效结构，直接或间接运用在其他相关的技术领域，均同理在本申请专利保护范围之内。Obviously, the above-described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The accompanying drawings show the preferred embodiments of the present application, but do not limit the scope of the patent of the present application. This application may be embodied in many different forms, rather these embodiments are provided so that a thorough and complete understanding of the disclosure of this application is provided. Although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing specific embodiments, or perform equivalent replacements for some of the technical features. . Any equivalent structure made by using the contents of the description and drawings of the present application, which is directly or indirectly used in other related technical fields, is also within the scope of protection of the patent of the present application.

Claims (10)

  1. 一种基于氮化铝纳米线的激光器，其特征在于，包括衬底、以及设置在衬底上的单根氮化铝纳米线；所述氮化铝纳米线平行于衬底，所述氮化铝纳米线的两个端面之间形成法布里-珀罗谐振腔。A laser based on aluminum nitride nanowires, characterized by comprising a substrate and a single aluminum nitride nanowire disposed on the substrate; the aluminum nitride nanowires are parallel to the substrate, and the nitrided A Fabry-Perot resonant cavity is formed between the two end faces of the aluminum nanowire.
  2. 根据权利要求1所述的激光器，其特征在于，所述激光器还包括飞秒激光激励源。The laser of claim 1, wherein the laser further comprises a femtosecond laser excitation source.
  3. 根据权利要求1所述的激光器，其特征在于，所述氮化铝纳米线的端面具有光栅结构。The laser according to claim 1, wherein the end face of the aluminum nitride nanowire has a grating structure.
  4. 根据权利要求1所述的激光器，其特征在于，所述氮化铝纳米线的端面The laser according to claim 1, wherein the end face of the aluminum nitride nanowire
    具有镀膜层。With coating.
  5. 根据权利要求2所述的激光器，其特征在于，所述飞秒激光为紫外飞秒激光，所述激光器为日盲紫外激光器。The laser of claim 2, wherein the femtosecond laser is an ultraviolet femtosecond laser, and the laser is a solar-blind ultraviolet laser.
  6. 根据权利要求5所述的激光器，其特征在于，所述紫外飞秒激光的波长大于200nm小于400nm。The laser according to claim 5, wherein the wavelength of the ultraviolet femtosecond laser is greater than 200 nm and less than 400 nm.
  7. 根据权利要求2所述的激光器，其特征在于，所述飞秒激光的重复频率为1kHz-200kHz可调。The laser according to claim 2, wherein the repetition frequency of the femtosecond laser is adjustable from 1 kHz to 200 kHz.
  8. 根据权利要求1所述的激光器，其特征在于，所述衬底为MgF 2衬底。 The laser of claim 1, wherein the substrate is a MgF 2 substrate.
  9. 根据权利要求1所述的激光器，其特征在于，所述氮化铝纳米线的直径为0.05-1000μm。The laser according to claim 1, wherein the diameter of the aluminum nitride nanowire is 0.05-1000 μm.
  10. 根据权利要求8所述的激光器，其特征在于，所述氮化铝纳米线的长度为10-5000μm。The laser according to claim 8, wherein the length of the aluminum nitride nanowire is 10-5000 μm.
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CN112563882A (en) * 2020-12-28 2021-03-26 深圳大学 Laser based on aluminum nitride nanowire

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