CN110277731B - III-V group silicon-based low-refractive-index gap structure DBR laser and integration method - Google Patents
III-V group silicon-based low-refractive-index gap structure DBR laser and integration method Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
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Abstract
The invention relates to a group III-V silicon-based low-refractive-index gap structure DBR laser and an integration method, belonging to the technical field of lasers.A laser light-emitting device comprises an active layer, a silicon layer and a silicon dioxide substrate from top to bottom, wherein the active layer comprises a rectangular end and a trapezoidal end, the long edge of the trapezoidal end is connected with the rectangular end, and the rectangular end and the trapezoidal end are manufactured integrally; the silicon layer is the rectangle strip, and silicon layer one end is equipped with the opening and leads to the groove, and the bottom that the groove was led to the opening is equipped with the convex ridge, and the horizontal projection of convex ridge is trapezoidal, and the long limit of convex ridge is connected with the bottom that the groove was led to the opening. The active layer is coupled to the silicon layer during forward light transmission, a low-refractive-index double-wedge structure is introduced, the tail part of the active layer is in a nearly-conical trapezoidal structure, the active layer and the silicon layer are mutually coupled, the length of the whole coupling area is less than 5 micrometers, the minimum length can reach 3 micrometers, the theoretical coupling efficiency is more than 99%, the size is far smaller than that of a similar laser structure, and the miniaturization of a device can be realized.
Description
Technical Field
The invention relates to a group III-V silicon-based low-refractive-index gap structure DBR laser and an integration method, and belongs to the technical field of lasers.
Background
With the rapid development of information technology, electronic components have been unable to meet the requirements of people for data processing capability, so that the replacement of conventional electronic communication systems by optical communication is the main direction of development in the electronic field in recent years, and lasers as light sources of optical integrated systems play a crucial role in related research.
Silicon photonics based on silicon materials can be processed on a large scale using well-established complementary oxide semiconductor (CMOS) fabrication processes. In the background of the development of optical interconnection technology and integration on silicon substrates, silicon-based light sources have become one of the major research hotspots. Since silicon is an indirect bandgap material, the radiative recombination of free electrons and holes in bulk silicon requires the assistance of phonons, and the luminous efficiency is much lower compared with that of direct bandgap materials such as III-V (internal quantum efficiency 10)-6) However, due to the low loss, high refractive index difference and mature CMOS process technology of the silicon-based material, researchers can not remain strong on the silicon-based material to manufacture the silicon-based material with low cost and high performance through the integration with other luminescent materialsA hybrid integrated laser.
The method for integrating the luminescent material on the silicon-based platform mainly comprises three schemes of homogeneous integration, heteroepitaxy and III-V/Si mixed integration. The method of homogeneous integration mainly comprises three steps of manufacturing a nano structure on a silicon material, doping rare earth ions and utilizing a stimulated Raman effect, but most of the methods have the problems of low luminous efficiency, optical pumping and the like. Heteroepitaxy is the growth of semiconductor materials with good crystal quality on a silicon substrate by a series of technical means. At present, epitaxially grown materials comprise III-V group with direct band gap and Ge with indirect band gap, but have the problems of incapability of room-temperature continuous lasing, overlarge threshold value, insufficient reliability and the like in the aspect of practical application. The III-V/Si hybrid integration can be classified into a III-V/Si bonding laser and a flip chip bonding laser according to the difference in structure and process. The group III-V active material, SOI (silicon on insulator), and bonding assist material are held together in close proximity by chemical, physical mechanisms such as van der waals forces, or by metal welding. Compared with the former two integration modes, the III-V/Si hybrid integration is mature in design and process and is gradually industrialized. The coupling region length of the common coupling mode in hybrid integration, such as a tapered structure, is generally in the order of tens to hundreds of microns, which is not favorable for miniaturization of devices.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a novel single-mode silicon-based DBR laser structure, in particular to a III-V group silicon-based low-refractive-index gap-structured DBR laser and an integrated light emitting method thereof. Aiming at solving the problem how to locate light in an active layer in an active region so that the light with target frequency stays in an active material during resonance and is fully amplified; how to realize the mutual coupling of light between an active layer and a silicon layer, the reflection is generated as less as possible, and the size is smaller than that of the same structure.
The technical scheme of the invention is as follows:
a group III-V silicon-based low-refractive-index gap-structured DBR laser comprises an active layer, a silicon layer and a silicon dioxide substrate from top to bottom,
the active layer comprises a rectangular end and a trapezoidal end, the long side of the trapezoidal end is connected with the rectangular end, and the rectangular end and the trapezoidal end are integrally manufactured;
the silicon layer is the rectangle strip, and silicon layer one end is equipped with the opening and leads to the groove, and the bottom that the groove was led to the opening is equipped with the convex ridge, and the horizontal projection of convex ridge is trapezoidal, and the long limit of convex ridge is connected with the bottom that the groove was led to the opening.
Preferably, according to the invention, the thickness and width dimensions of the silicon layer are selected to be 220nm x 500nm, in order to ensure a single-mode transmission of the light of the silicon layer.
Further preferably, the active layer may have a width of 2 to 3 μm and a thickness of 1 to 2 μm. The fundamental mode energy in the active layer is mostly concentrated in the central region of the cross section, and the high-order modes that appear due to the oversized cross section generally do not participate in the generation of laser light.
Preferably, according to the invention, the long side of the ridge of the silicon layer is in the same vertical plane as the short side of the trapezoidal end of the active layer. Namely, the long edge of the ridge of the silicon layer and the short edge of the trapezoid of the active layer are in the same straight line in horizontal projection.
Further preferably, the horizontal central axis of the active layer and the horizontal central axis of the silicon layer are located in the same vertical plane. Namely, in the horizontal projection, the tail of the active layer is consistent with the initial position of the ridge of the silicon layer, the central axes of the active layer and the ridge of the silicon layer are coincident, and the coupling efficiency of the design is the highest under the condition that other parameter conditions are the same. In actual manufacturing, relative positions are allowed to deviate, complete symmetry and alignment cannot be achieved, and coupling efficiency is reduced correspondingly due to the influence of the position deviation.
Further preferably, the distance between the short side and the long side of the trapezoidal end of the active layer is greater than the length of the ridge of the silicon layer.
Preferably, according to the present invention, the shorter side of the trapezoidal end of the active layer and the shorter side of the ridge of the silicon layer are both 100 nm. The upper and lower trapezoidal structures are combined with the low refractive index wedge extrusion and light field limitation on two sides of the ridge of the silicon layer, so that mutual coupling of light between the upper layer and the lower layer is realized. Theoretically, a tapered structure should be selected for completely coupling the optical field from one material to another material, that is, a structure with a triangular horizontal projection is adopted, but in practical situations, the tapered structure generates a large reflection at the tip and cannot be realized in a strict process, so that a trapezoidal structure with a short side of 100nm is selected, the reflection generated at the tip is reduced on the premise of ensuring high coupling efficiency, and meanwhile, the usability of the structure in practical manufacturing is improved.
According to the invention, preferably, the long edge of the ridge of the silicon layer is a boundary between the coupling region and the passive region, one side of the long edge of the ridge facing the ridge is the coupling region, the length of the coupling region is the length of the ridge, the other side of the long edge of the ridge is the passive region, and by taking light with the wavelength of 1550nm as an example, a grating is etched on the upper surface of the silicon layer, and the grating is positioned in the passive region of the silicon layer and is etched and connected behind the coupling region. The grating length is 165 μm, the period is 0.3222 μm, the etching depth is 0.006 μm, and the light reflectivity to 1550nm wavelength reaches more than 90%. Reflecting a specific wavelength lambda by designing the grating structure0(e.g., 1550nm) to form a resonant cavity, enabling single wavelength light emission.
It is further preferable that one end of the grating far away from the coupling region is plated with a high-permeability film. The high-transmittance film is a film with a transmittance of 99% or more of the full frequency band commonly used by a laser, and the laser is mainly divided into three parts along the propagation direction (transverse direction) of light: active area, coupling area, passive area. The left side of the active layer is provided with a reflecting end face which is generally a truncated face, does not need a coating and is only used as one end of a resonant cavity and a light outlet of a laser; the right end face of the grating needs to be plated with a high-transmittance film so as to ensure that the section of the right end of the grating does not introduce phase shift, and the central wavelength of the grating reflection spectrum is aligned to lambda0。
An integrated light emitting method of a group III-V silicon-based low-refractive-index slot structure DBR laser comprises the following steps: injecting current into the active layer to generate optical signal, coupling the optical signal to the silicon layer via the coupling region, and adjusting the target wavelength λ by the grating structure of the passive region0The light reflection and the reflection end face of the active layer far away from the coupling area form a resonant cavity, so that the light with the frequency is subjected to resonant amplification, and finally laser emission is formed. Except for lambda0Light outside the wavelength is not reflected by the grating.
According to the invention, the open through groove of the silicon layer is filled with a low-refractive-index material with a refractive index smaller than that of the active layer and the silicon layer, and the low-refractive-index material is a low-refractive-index material such as air or benzocyclobutene (BCB).
The application requires localizing light to the activeIn-layer: the active layer generates and amplifies an optical signal through current injection, and thus it is desirable that light propagates through the active layer in the active region to sufficiently amplify a target wavelength (λ)0) The optical signal of (1). In the application, the active layer material is a III-V material, the refractive index of the active layer material is smaller than that of silicon, and light can be automatically coupled to the silicon layer when the active layer material and the silicon layer are in direct contact, so that a gap structure made of a low-refractive-index material is designed in the silicon layer of the active region. When the refractive index of the material is much smaller than that of the active layer and the silicon layer (e.g., air with a refractive index of 1, or other low-index filler material such as BCB, etc.), light can be localized in the active layer in the active region without affecting the propagation of light in the silicon layer. The whole structure is simple, and the process is easy to realize. The preferred structure in the present invention is exemplified by air, and the structure is inconvenient when the material is not air, but the influence on the whole structure is: the higher the refractive index of the material is, the smaller the difference between the refractive index of the material and the refractive index of the active layer material is, the poorer the effect on the optical field local area is, the lower the transmission efficiency of the structure is caused, and the length of the coupling area is increased.
The coupling process between the silicon layer and the active layer is as follows: the light is transmitted in forward direction by coupling from the active layer to the silicon layer at a wavelength λ0The light is required to be coupled from the silicon layer to the active layer when it is reflected back through the grating. Therefore, a low-refractive-index double-wedge structure is introduced, and the active layer and the silicon layer are coupled with each other by matching with a trapezoidal structure with a nearly conical tail part of the active layer. Through optimized design, the length of the whole coupling region is less than 5 μm, the minimum length can reach 3 μm, the theoretical coupling efficiency is more than 99%, the size is far smaller than that of the similar laser structure, and the miniaturization of the device can be realized.
The invention has the beneficial effects that:
1. the invention adopts a III-V/Si mixed integration mode, a gap structure of low-refractive index materials is applied in an active area to localize an optical field in III-V group materials by optimizing a coupling structure and the low-refractive index material localized optical field, a low-refractive index double-wedge structure is adopted in the coupling area to limit and extrude the optical field, so that the effective coupling of light between the III-V group materials and silicon-based materials is realized, a resonant cavity is formed by silicon-based gratings, and the single-mode lasing with specific wavelength is realized. The coupling region constructed by the double-wedge structure can reach below 5 microns, the size of the coupling region is far smaller than that of the coupling region of the existing similar laser (in the existing silicon-based laser structure with the same coupling mode, the length of the coupling region is more in the order of magnitude of dozens of microns to hundreds of microns), the length of the coupling region is greatly shortened, the structure is shorter and simpler on the premise of single-mode light emission, the whole size of the device is smaller, and the miniaturization of the device is realized.
2. The invention uses the gap structure local optical field of the low refractive index material, has excellent performance and simple structure and is easy to process.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a group III-V silicon-based low-refractive-index gap-structured DBR laser according to the present invention;
FIG. 2 is a schematic view of an active layer structure according to the present invention;
FIG. 3 is a diagram of a silicon layer structure (low refractive index material is air for example) according to the present invention;
FIG. 4a is a schematic optical path diagram of the coupling region of the present invention, wherein the x-axis is the optical resonance and propagation direction, and the z-direction is the active layer, the silicon layer and the silicon dioxide substrate from top to bottom;
FIG. 4b is a schematic side view of a laser comparing the schematic optical path of FIG. 4 a;
FIG. 5 is a graph of coupling efficiency versus coupling region length;
FIG. 6 is a graph of the relationship between laser output power (mW) and time (ns) when 70mA current is injected under the conditions of the parameters of Table 1, with output power on the ordinate and time on the abscissa;
FIG. 7 is a graph of the laser output power spectrum at 70mA current injection under the parameters of Table 1.
Wherein: 1. the active layer comprises 1-1 of an active layer, 1-2 of a rectangular end, 2 of a trapezoidal end, 2 of a silicon layer, 2-1 of a convex ridge, 3 of a silicon dioxide substrate, A of an active area, B of a coupling area, C of a passive area, D of air.
Detailed Description
The present invention will be further described by way of examples, but not limited thereto, with reference to the accompanying drawings.
Example 1:
a group III-V silicon-based low-refractive-index gap structure DBR laser comprises an active layer, a silicon layer and a silicon dioxide substrate from top to bottom, wherein the active layer comprises a rectangular end and a trapezoidal end, the long edge of the trapezoidal end is connected with the rectangular end, and the rectangular end and the trapezoidal end are integrally manufactured; the silicon layer is the rectangle strip, and silicon layer one end is equipped with the opening and leads to the groove, and the bottom that the groove was led to the opening is equipped with the convex ridge, and the horizontal projection of convex ridge is trapezoidal, and the long limit of convex ridge is connected with the bottom that the groove was led to the opening. Air is used as a low-refractive-index material in the open through groove of the silicon layer, and other low-refractive-index materials are not filled in the open through groove of the silicon layer.
The thickness and width dimensions of the silicon layer are selected to be 220nm by 500nm to ensure single-mode transmission of the silicon layer light.
The active layer has a width of 2 μm and a thickness of 1 μm. The fundamental mode energy in the active layer is mostly concentrated in the central region of the cross section, and the high-order modes that appear due to the oversized cross section generally do not participate in the generation of laser light.
Example 2:
a group III-V silicon-based low index gap structure DBR laser having the structure as described in example 1 except that the active layer has a width of 3 μm and a thickness of 2 μm.
Example 3:
a group III-V silicon-based low refractive index slot structure DBR laser having the structure as described in embodiment 1, except that the long side of the ridge of the silicon layer and the short side of the trapezoidal end of the active layer are in the same vertical plane, i.e., the long side of the ridge of the silicon layer and the short side of the trapezoidal end of the active layer are in a straight line in horizontal projection.
The horizontal central axis of the active layer and the horizontal central axis of the silicon layer are located in the same vertical plane. Namely, in the horizontal projection, the tail of the active layer is consistent with the initial position of the ridge of the silicon layer, the central axes of the active layer and the ridge of the silicon layer are coincident, and the coupling efficiency of the design is the highest under the condition that other parameter conditions are the same. In actual manufacturing, relative positions are allowed to deviate, complete symmetry and alignment cannot be achieved, and coupling efficiency is reduced correspondingly due to the influence of the position deviation.
The distance between the short side and the long side of the trapezoidal end of the active layer is larger than the length of the convex ridge of the silicon layer.
Example 4:
a group III-V silicon-based low index gap DBR laser constructed as described in example 3, except that the short side of the trapezoidal end of the active layer and the short side of the ridge of the silicon layer are both 100 nm. The upper and lower trapezoidal structures are combined with the low refractive index wedge extrusion and light field limitation on two sides of the ridge of the silicon layer, so that mutual coupling of light between the upper layer and the lower layer is realized. Theoretically, a tapered structure should be selected for completely coupling the optical field from one material to another material, that is, a structure with a triangular horizontal projection is adopted, but in practical situations, the tapered structure generates a large reflection at the tip and cannot be realized in a strict process, so that a trapezoidal structure with a short side of 100nm is selected, the reflection generated at the tip is reduced on the premise of ensuring high coupling efficiency, and meanwhile, the usability of the structure in practical manufacturing is improved.
Example 5:
the structure of the DBR laser with the III-V group silicon-based low-refractive-index gap structure is as described in embodiment 4, except that the long edge of the ridge of the silicon layer is a boundary between the coupling region and the passive region, one side of the long edge of the ridge facing the ridge is the coupling region, the length of the coupling region is the length of the ridge, the other side of the long edge of the ridge is the passive region, and for example, light with a wavelength of 1550nm is used for etching a grating on the upper surface of the silicon layer, wherein the grating is located in the passive region of the silicon layer and is etched and connected behind the coupling region. The grating length is 165 μm, the period is 0.3222 μm, the etching depth is 0.006 μm, and the light reflectivity to 1550nm wavelength reaches more than 90%. Reflecting a specific wavelength lambda by designing the grating structure0(e.g., 1550nm) to form a resonant cavity, enabling single wavelength light emission. The grating does not necessarily have to be located next to the boundary of the passive region of the coupling region, but may be located further apart.
And one end of the grating, which is far away from the coupling region, is plated with a high-transmittance film. The high-transmittance film is a film with a transmittance of 99% or more of the full frequency band commonly used by a laser, and the laser is mainly divided into three parts along the propagation direction (transverse direction) of light: active area, coupling area, passive area. The left side of the active layer is provided with a reflecting end face which is generally a truncated face, does not need a coating and is only used as one end of a resonant cavity and a light outlet of a laser; the right end face of the grating needs to be plated with a high-transmittance film so as to ensure that the section of the right end of the grating does not introduce phase shift, and the central wavelength of the grating reflection spectrum is aligned to lambda0. The left side in this embodiment is the left side shown in the drawing.
Example 6:
an integrated light emitting method using the group III-V silicon based low refractive index slot structure DBR laser of embodiment 5, comprising the steps of: injecting current into the active layer to generate optical signal, coupling the optical signal to the silicon layer via the coupling region, and adjusting the target wavelength λ by the grating structure of the passive region0The light reflection and the reflection end face of the active layer far away from the coupling area form a resonant cavity, so that the light with the frequency is subjected to resonant amplification, and finally laser emission is formed. Except for lambda0Light outside the wavelength is not reflected by the grating. It can be observed from fig. 4a that the light achieves mutual coupling between the silicon layer and the active layer via the coupling region.
The length of the coupling region is changed, the change of the coupling efficiency is shown in fig. 5, and it can be seen that the theoretical coupling efficiency reaches 99.47% when the length of the coupling region constructed by the low-refractive-index double-wedge structure is 3 μm, and the coupling efficiency tends to be stable when the length is continuously increased.
Taking the laser parameters in table 1 as an example, the grating center wavelength is set to 1550nm (corresponding to a frequency of 193.54THz), the low refractive index material is air, the influence of temperature is considered, the injection current is 70mA, and the structure is simulated by using a numerical simulation algorithm, and the result is shown in fig. 6 and 7.
TABLE 1 laser parameters
| Parameters | Values |
| Active Region Length(μm) | 300 |
| Active Region Thickness(μm) | 0.18 |
| Refractive index | 3.2 |
| Group refractive index | 3.6 |
| Confinment factor | 0.3 |
| Differential gain(cm2) | 2.5*10-16 |
| |
6*10-17 |
| Transparency carrier density(cm-3) | 1*1018 |
| Waveguide loss(cm-1) | 25 |
| |
4 |
| Reference temperature(K) | 300 |
| Series thermal resistance(Om) | 7 |
| Reciprocal of thermal capacity(K/J) | 3.87*108 |
| Thermal deffusion coefficient(cm2/s) | 0.2 |
Example 7:
a group III-V silicon-based low index gap DBR laser constructed as described in example 5, except that the open through trench of the silicon layer is filled with a low index material having a refractive index less than that of the active layer and the silicon layer, the low index material being benzocyclobutene (BCB).
Claims (11)
1. A group III-V silicon-based low-refractive-index gap structure DBR laser is characterized by comprising an active layer, a silicon layer and a silicon dioxide substrate from top to bottom;
the active layer comprises a rectangular end and a trapezoidal end, the long side of the trapezoidal end is connected with the rectangular end, and the rectangular end and the trapezoidal end are integrally manufactured;
the silicon layer is the rectangle strip, and silicon layer one end is equipped with the opening and leads to the groove, and the bottom that the groove was led to the opening is equipped with the convex ridge, and the horizontal projection of convex ridge is trapezoidal, and the long limit of convex ridge is connected with the bottom that the groove was led to the opening.
2. The group III-V silicon-based low refractive index slot structure DBR laser of claim 1, wherein the silicon layer has thickness and width dimensions of 220nm x 500 nm.
3. The group III-V silicon-based low refractive index slot structure DBR laser of claim 2, wherein the active layer has a width of 2-3 μm and a thickness of 1-2 μm.
4. The DBR laser with group III-V silicon based low refractive index gap structure of claim 1, wherein the long side of the ridge of the silicon layer is in the same vertical plane as the short side of the trapezoidal end of the active layer.
5. The group III-V silicon-based low refractive index gap structure DBR laser of claim 4, wherein a horizontal central axis of the active layer and a horizontal central axis of the silicon layer are in a same vertical plane.
6. The DBR laser with group III-V silicon based low refractive index gap structure of claim 1, wherein the distance between the short side and the long side of the trapezoidal end of the active layer is larger than the ridge length of the silicon layer.
7. The DBR laser of III-V silicon based low refractive index slot structure of claim 1 wherein the short side of the trapezoidal end of the active layer and the short side of the ridge of the silicon layer are both 100 nm.
8. The DBR laser with III-V silicon based low refractive index gap structure as claimed in claim 1, wherein the long side of the ridge of the silicon layer is the boundary between the coupling region and the passive region, the side of the long side of the ridge facing the ridge is the coupling region, the other side of the long side of the ridge is the passive region, the grating is etched on the upper surface of the silicon layer, the grating is located in the passive region of the silicon layer, the grating has a length of 165 μm, a period of 0.3222 μm, and an etching depth of 0.006 μm.
9. The group III-V silicon-based low refractive index slot structure DBR laser of claim 8, wherein an end of the grating remote from the coupling region is coated with a highly transmissive film.
10. An integrated method using the group III-V silicon based low index slot structure DBR laser of claim 9, comprising the steps of: injecting current into the active layer to generate optical signal, coupling the optical signal to the silicon layer via the coupling region, and adjusting the target wavelength λ by the grating structure of the passive region0And a resonant cavity is formed with the reflecting end face of the active layer far from the coupling region to make the wavelength lambda be equal to0The light is amplified by resonance, and finally laser emission is formed.
11. The group III-V silicon-based low refractive index slot structure DBR laser of claim 1, wherein the open through trench of the silicon layer is filled with a low refractive index material having a refractive index less than that of the active layer and the silicon layer, the low refractive index material being air or benzocyclobutene.
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| JP5752814B2 (en) * | 2011-03-09 | 2015-07-22 | コーニンクレッカ フィリップス エヌ ヴェ | More efficient VCSEL array |
| CN103986063B (en) * | 2014-05-15 | 2017-01-04 | 华中科技大学 | A kind of longitudinal mode semiconductor laser based on bandpass filtering structure |
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| CN101005193A (en) * | 2006-01-19 | 2007-07-25 | 优迪那半导体有限公司 | Fabrication method of semiconductor luminescent device |
| CN104638515A (en) * | 2015-02-13 | 2015-05-20 | 中国科学院半导体研究所 | Structure and method for bonding III-V group and silicon mixed type laser based on zinc oxide |
| CN107230930A (en) * | 2016-03-23 | 2017-10-03 | 华为技术有限公司 | A kind of tunable laser and preparation method |
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