WO2022141856A1 - Laser à base de nanofil de nitrure d'aluminium - Google Patents

Laser à base de nanofil de nitrure d'aluminium Download PDF

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Publication number
WO2022141856A1
WO2022141856A1 PCT/CN2021/083597 CN2021083597W WO2022141856A1 WO 2022141856 A1 WO2022141856 A1 WO 2022141856A1 CN 2021083597 W CN2021083597 W CN 2021083597W WO 2022141856 A1 WO2022141856 A1 WO 2022141856A1
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WO
WIPO (PCT)
Prior art keywords
laser
aluminum nitride
nanowire
nitride nanowire
substrate
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PCT/CN2021/083597
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English (en)
Chinese (zh)
Inventor
王英
叶佳慧
廖常锐
王义平
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深圳大学
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Publication of WO2022141856A1 publication Critical patent/WO2022141856A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/107—Subwavelength-diameter waveguides, e.g. nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length

Definitions

  • the invention relates to the technical field of lasers, in particular to a laser based on aluminum nitride nanowires.
  • Nanowire lasers are very popular in applications such as data storage, medical, biological, and chemiluminescence sensing.
  • the nanowires are CdS (cadmium sulfide), ZnO (zinc oxide), GaN (gallium nitride), and the radiation wavelength of nanowire lasers has covered the range of near-ultraviolet to visible light. Due to the advantages of high breakdown electric field, thermal conductivity, and electron mobility, these wide-bandgap semiconductor materials have great development potential in the fields of high temperature, high frequency, radiation resistance and short-wavelength light emission.
  • the band gap of CdS is 2.45eV, the corresponding emission wavelength is 507nm; the band gap of ZnO is 3.2eV, the corresponding emission wavelength is 390nm; the band gap of GaN is 3.4eV, the corresponding emission wavelength is 364nm.
  • the stimulated emission of semiconductor nanowires under optical pumping usually uses a shorter wavelength pump light to achieve linear optical pumping, which largely limits the output wavelength range and application of nanowire lasers.
  • the technology can only realize the laser output of UV-A (output wavelength 315-400nm) and UV-B (280-315nm), and it is difficult to realize the laser output below 280nm.
  • the present invention proposes a laser based on aluminum nitride nanowires, comprising a substrate and a single aluminum nitride nanowire disposed on the substrate; the aluminum nitride nanowires Parallel to the substrate, a Fabry-Perot resonant cavity is formed between the two end faces of the aluminum nitride nanowire.
  • the laser further includes a femtosecond laser excitation source.
  • the end face of the aluminum nitride nanowire has a grating structure.
  • the end face of the aluminum nitride nanowire has a coating layer.
  • the femtosecond laser is an ultraviolet femtosecond laser
  • the laser is a solar-blind ultraviolet laser
  • the wavelength of the ultraviolet femtosecond laser is greater than 200 nm and less than 400 nm.
  • the repetition frequency of the femtosecond laser is adjustable from 1 kHz to 200 kHz.
  • the substrate is a MgF 2 substrate.
  • the diameter of the aluminum nitride nanowires is 0.05-1000 ⁇ m.
  • the length of the aluminum nitride nanowires is 10-5000 ⁇ m.
  • a laser based on aluminum nitride nanowires proposed by the present invention adopts a single aluminum nitride nanowire as a gain medium, and forms a Fabry-Perot resonant cavity between the two end faces of the aluminum nitride nanowire, so that the The aluminum nitride nanowire serves as the gain medium and the resonant cavity of the laser at the same time;
  • the nanowire of the present application is an aluminum nitride nanowire, and the aluminum nitride has an ultra-wide band gap of 6.2 eV, which is beneficial to realize the laser output below 280 nm.
  • FIG. 1 is a schematic diagram of an aluminum nitride nanowire-based laser according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram of a Fabry-Perot resonator of an aluminum nitride nanowire-based laser according to an embodiment of the present invention.
  • Substrate (1) aluminum nitride nanowires (2), femtosecond laser (3), left end surface (5), right end surface (4).
  • first and second are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature delimited with “first”, “second” may expressly or implicitly include at least one of that feature.
  • plurality means at least two, such as two, three, etc., unless otherwise expressly and specifically defined.
  • FIG. 1 is a schematic structural diagram of an aluminum nitride nanowire-based laser according to an embodiment of the present invention.
  • an aluminum nitride nanowire-based laser proposed by the present invention includes a substrate (1) and a semiconductor nanowire disposed on the substrate (1).
  • the semiconductor nanowire of the present application is a single aluminum nitride nanowire (2).
  • the aluminum nitride nanowires (2) are arranged parallel to the substrate (1).
  • the aluminum nitride nanowire (2) has good single crystal quality, atomically smooth surface, and high refractive index, and can effectively confine light in subwavelength dimensions.
  • the end face of the aluminum nitride nanowire (2) has a certain reflectivity, so that the left end face (5) and the right end face (4) of the aluminum nitride nanowire (2) constitute two mirrors, as shown in Figure 2, in the A Fabry-Pérot (F-P, Fabry-Pérot) resonant cavity is formed between these two end faces.
  • a single aluminum nitride nanowire (2) is used as a gain medium, and the aluminum nitride has an ultra-wide band gap of 6.2eV, and the corresponding emission wavelength is 200nm-210nm, which is beneficial to realize the laser output below 280nm.
  • the laser stimulated radiation of this structure has good optical mode characteristics, and can generate high-brightness laser light, and the generated laser light is output from the end face of the aluminum nitride nanowire (2).
  • the laser also includes an excitation source, which can be electrically pumped or optically pumped.
  • the excitation source of the present application is a femtosecond laser (3).
  • the repetition rate of the femtosecond laser (3) is adjustable from 1 kHz to 200 kHz and has a very high peak power density.
  • the excitation source is an ultraviolet femtosecond laser (3), and the laser is a solar-blind ultraviolet laser.
  • the wavelength of the ultraviolet femtosecond laser is greater than 200 nm and less than 400 nm.
  • the excitation source is the pump of two-photon absorption, and the aluminum nitride nanowire (2) realizes particle number inversion and laser output through two-photon absorption.
  • Ultraviolet femtosecond laser two-photon excitation with high peak power density can effectively realize solar-blind ultraviolet laser output of aluminum nitride nanowires (2).
  • the wavelength range of the ultraviolet femtosecond laser is 210-390 nm.
  • the excitation source is a linear pump with single-photon absorption. If the wavelength of the pump femtosecond laser used is greater than 400 nm, the excitation source is nonlinear pumping with multiphoton absorption, and the efficiency is low.
  • two-photon excitation of ultraviolet femtosecond laser with high peak power density is preferably used.
  • two-photon excitation of ultraviolet femtosecond laser has a larger penetration depth, and more efficient optical coupling can be obtained. Reduce non-radiative recombination caused by nanowire surface defects and improve laser output performance.
  • Aluminum nitride (AlN) has an ultra-wide band gap of 6.2eV.
  • the photon energy of the ultraviolet femtosecond laser is 3.1eV-4.8eV, so when the femtosecond laser is used as the excitation source, the aluminum nitride nanowire (2) can absorb two femtosecond laser photons at the same time, and under the action of the external excitation source ultraviolet femtosecond laser, the electrons of the aluminum nitride nanowire (2) transition to a high energy level state and realize The number of particles is reversed to generate stimulated radiation, and the laser with the wavelength of the solar-blind ultraviolet band is emitted from the end face, which can realize the solar-blind ultraviolet laser output of about 200nm.
  • the ultraviolet laser in this band can be used in optical imaging, positioning identification, and medical detection.
  • the aluminum nitride nanowire (2) itself acts as a Fabry–Pérot (F-P, Fabry–Pérot) resonant cavity, and the stimulated emission of this structure has better optical mode characteristics under the two-photon excitation of ultraviolet femtosecond laser. , capable of generating high-brightness solar-blind UV monochromatic light, and the generated laser is output from the end face of aluminum nitride nanowires, which is very suitable for coupling into nanophotonics components, such as quantum dots, metal nanoparticles, plasmonic waveguides, and biological specimens. .
  • the aluminum nitride nanowire (2) has good surface crystallization and flat end faces, and the diameter of the aluminum nitride nanowire (2) is 0.05-1000 ⁇ m.
  • the length of the aluminum nitride nanowires (2) is 10-5000 ⁇ m.
  • a grating structure is provided on the end face of the aluminum nitride nanowire (2).
  • the grating structure is, for example, a FBG grating structure written on the end face, the purpose of which is to enhance the end face reflection and reduce the mirror loss of the aluminum nitride nanowire.
  • the light wave interacts with the metal grating as it propagates inside the nanowire and is reflected by the end face, creating a gain feedback.
  • a coating layer can also be provided on the end face of the aluminum nitride nanowire (2).
  • the plating film is, for example, a gold film.
  • the grating structure and coating are not limited to this.
  • a coating film and a grating can be provided on the end face at the same time, and the grating can be engraved on the end face first, and then the coating film can be formed.
  • the substrate (1) of the specific embodiment of the present application is preferably a MgF2 substrate (1).
  • MgF2 is a low refractive index crystal, which can effectively prevent the leakage of optical signals.
  • the laser of the present application has a wide range of applications in the fields of quantum computing, display, lighting, biological and gas sensing, medical diagnosis, high-density storage, and material science.
  • a laser based on aluminum nitride nanowires proposed by the present invention adopts a single aluminum nitride nanowire as a gain medium, and forms a Fabry-Perot resonant cavity between the two end faces of the aluminum nitride nanowire, so that the The aluminum nitride nanowire serves as the gain medium and the resonant cavity of the laser at the same time;
  • the nanowire of the present application is an aluminum nitride nanowire, and the aluminum nitride has an ultra-wide band gap of 6.2 eV, which is beneficial to realize the laser output below 280 nm.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Lasers (AREA)

Abstract

La présente invention concerne un laser à base de nanofil de nitrure d'aluminium (2), comprenant un substrat (1) et un seul nanofil de nitrure d'aluminium (2) disposé sur le substrat (1) ; le nanofil de nitrure d'aluminium (2) étant parallèle au substrat (1), et une cavité résonante de Fabry-Perot étant formée entre deux surfaces d'extrémité (3, 4) du nanofil de nitrure d'aluminium (2). Dans le laser à base de nanofil de nitrure d'aluminium (2), le nanofil de nitrure d'aluminium unique (2) est utilisé comme milieu de gain, ce qui est avantageux pour obtenir une sortie de lumière laser à une longueur d'onde inférieure à 280 nm.
PCT/CN2021/083597 2020-12-28 2021-03-29 Laser à base de nanofil de nitrure d'aluminium WO2022141856A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202011578927.5A CN112563882A (zh) 2020-12-28 2020-12-28 一种基于氮化铝纳米线的激光器
CN202011578927.5 2020-12-28

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WO2022141856A1 true WO2022141856A1 (fr) 2022-07-07

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DE (1) DE202021105216U1 (fr)
WO (1) WO2022141856A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112563882A (zh) * 2020-12-28 2021-03-26 深圳大学 一种基于氮化铝纳米线的激光器
CN116088090A (zh) * 2023-03-29 2023-05-09 北京工业大学 基于掩模法刻写2微米大模场光纤光栅的系统及工作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060098705A1 (en) * 2004-11-05 2006-05-11 Shih-Yuan Wang Nano-VCSEL device and fabrication thereof using nano-colonnades
CN102684068A (zh) * 2012-05-28 2012-09-19 西安交通大学 一种基于纳米线阵列的可调谐激光器及其制备工艺
CN102780156A (zh) * 2011-05-13 2012-11-14 中国科学院物理研究所 一种氮化铝固体激光器及其制备方法
CN110249491A (zh) * 2017-02-03 2019-09-17 挪威科技大学 基于在石墨烯型基底上生长的纳米线的激光器或led
CN112563882A (zh) * 2020-12-28 2021-03-26 深圳大学 一种基于氮化铝纳米线的激光器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060098705A1 (en) * 2004-11-05 2006-05-11 Shih-Yuan Wang Nano-VCSEL device and fabrication thereof using nano-colonnades
CN102780156A (zh) * 2011-05-13 2012-11-14 中国科学院物理研究所 一种氮化铝固体激光器及其制备方法
CN102684068A (zh) * 2012-05-28 2012-09-19 西安交通大学 一种基于纳米线阵列的可调谐激光器及其制备工艺
CN110249491A (zh) * 2017-02-03 2019-09-17 挪威科技大学 基于在石墨烯型基底上生长的纳米线的激光器或led
CN112563882A (zh) * 2020-12-28 2021-03-26 深圳大学 一种基于氮化铝纳米线的激光器

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DE202021105216U1 (de) 2021-10-05

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