CN1702926A - Mini single-photon light source - Google Patents
Mini single-photon light source Download PDFInfo
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- CN1702926A CN1702926A CN 200510025274 CN200510025274A CN1702926A CN 1702926 A CN1702926 A CN 1702926A CN 200510025274 CN200510025274 CN 200510025274 CN 200510025274 A CN200510025274 A CN 200510025274A CN 1702926 A CN1702926 A CN 1702926A
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- microcavity
- quantum dot
- photon
- film
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Abstract
This invention discloses one laser source and quanta point integrated portable micro single photon source, wherein, the laser source is of laser diode and the lighting source is of the three-dimensional optical micro chamber with point imbedded. The invention uses diode chip as underlay orderly distributed with the micro chamber and filter slices. The micro chamber comprises the micro chamber film and triangle grid circle distributed air column.
Description
Technical field
The present invention relates to quantum information, single-photon source, specifically be meant dexterity that a kind of excitation source and quantum dot light emitting light source are integrated, the portable minisize single-photon light source.
Background technology
Quantum Properties has unique function in message area, improving arithmetic speed, guaranteeing information security, increasing the limit that aspects such as information capacity and raising accuracy of detection may break through existing classical information system, so a new subject branch---the quantum information science that just has been born.It is the product that quantum mechanics combines with information science, comprise: quantum cryptography, quantum communications, quantum calculation and quantum measurement etc., in recent years, theoretical and experimentally obtained important breakthrough, cause the great attention of national governments, scientific and technological circle and information industry circle.People believe firmly that more and more quantum information science is that information science development has been started new principle and method, will give play to great potential in 21 century, and quantum cryptography wherein is one of important use field very in the quantum information science.Because the fail safe of quantum cryptography guaranteed by principle of quantum mechanics, but measured perception and can not clone property have guaranteed that quantum cryptography can the trace slash stolen tin, so be very safe.
Yet, no matter be quantum cryptology or quantum calculation, single-photon light source all is the key equipment that must solve, and is one of important focus of quantum information research, also is the difficult problem that must capture.Employed single-photon light source is coherent optical pulse to be decayed to average each pulse have only 0.1,0.2 photon in the research now, because the Poisson distribution feature of photon, in the single-photon source by such decay approach realization, exist the probability of 2 photons still to can not ignore in the individual pulse, so this is a kind of approximate single-photon source, its efficient is low, has both influenced the transmission range of quantum key, influences its fail safe again.Therefore develop the critical problem that real single-photon source becomes quantum cryptography research.And present this single-photon source also need have laser, and it is convenient to use inadequately, can only be in the laboratory or relatively-stationary occasion use.
If the luminous component and the exciting light of single-photon light source can be partially integrated into together, make solid-state microminiaturized single-photon source easy to carry, simple to operate, then not only can reduce cost greatly, but also can popularize single-photon light source to a great extent, it is convenient to make that the use of single-photon light source resembles the use of laser diode in the present optical communication, its application be can greatly widen, the research and the application of quantum cryptology even quantum information science promoted.
Summary of the invention
Some problems at above-mentioned single-photon light source existence, the present invention proposes the three-dimensional optical microcavity structure that a kind of luminous component adopts quantum dot embedding, and it is itself and excitation source is integrated, modeling effect by three-dimensional optical microcavity realizes single photon output, becomes mini single-photon light source easy to carry, simple to operate.
Single-photon light source of the present invention comprises: exciting light part, luminous component and filter.Exciting light partly adopts laser diode 1, and luminous component adopts the three-dimensional optical microcavity 2 of quantum dot embedding.As substrate 101, on substrate, be equipped with the three-dimensional optical microcavity 2 of the quantum dot embedding that forms by plated film and lithographic method with the chip of laser diode, be equipped with filter 3 on the microcavity 2.
The three-dimensional optical microcavity of said quantum dot embedding is 201 by the microcavity film, is embedded in the quantum dot 202 in the microcavity, constitutes near being carved with the cylindrical air column 203 that is the triangular lattice periodic distribution around the cavity.The degree of depth of air column 203 is 201 thickness for the microcavity film.
Said microcavity film is that 201 structures are:
(LH)
mnL(HL)
m，
Wherein (LH)
mFor the following reflectance coating of microcavity is 2011, nL is the resonant cavity layer 2012 of microcavity, (HL)
mFor the last reflectance coating of microcavity is 2013, L is a low-index film, and H is a high refractive index layer, and m is the alternative stacked number of times of L and H, m 〉=6, and n is 2 integral multiple, n 〉=2, the thickness of L and H rete is λ
0/ 4, λ
0Fluorescence peak position for quantum dot.
Said quantum dot 202 is embedded in the centre of resonant cavity layer 2012.
Said filter 3 is the bandpass filters that single photon light can see through, or shortwave edge filter, be that the bonding photon all filters the light of single photon wavelength with short-wave band when seeing through, disturb to guarantee that exciting light can not transmit single-photon source formed.
Above-mentioned microcavity film is the F-P resonance structure, form 1-D photon crystal in vertical direction, microcavity film system forms 2 D photon crystal with the air column that is the triangular lattice periodic distribution all around again simultaneously, total constitutes the optical microcavity of a three-D photon crystal, when the quantum dot in being embedded in microcavity is excited by laser diode, because the modeling effect of three-dimensional optical microcavity can be exported by the good single photon of obtained performance, forms single-photon source.
The invention has the advantages that:
1. because microcavity adopts the design of accurate three-dimensional photon crystal structure, make it that good limitation capability all be arranged on all directions, overcome the conventional two-dimensional photon crystal micro cavity structure defective of light leak in vertical direction from principle, and can be easily from a plurality of be embedded into optimize single quantum dot light emitting the quantum dot, form real single photon light emitting source.
2. the single photon luminous component with function admirable is partially integrated into corresponding exciting light, makes whole single-photon source become very compact, small and exquisite, portable, and it is convenient especially to use; And add the particular design of filter, make that in single photon output, the light that excitation source sends can not see through filter output, avoid the interference of excitation source to single-photon light source.
Description of drawings
Fig. 1 is the structural representation of mini single-photon light source of the present invention;
Fig. 2 is the transmission spectrum of optical microcavity of the present invention and the luminous spectrum of selected laser diode, and wherein solid line is the transmission spectrum of optical microcavity, and dotted line is the luminous spectrum of laser diode;
Fig. 3 solid line is the transmission spectrum of filter, and dotted line is the luminous spectrum of laser diode.
Embodiment
The single-photon source that with the wavelength is 585nm below is that embodiment elaborates to the specific embodiment of the present invention in conjunction with the accompanying drawings:
1. the microcavity film is 201 design
Fluorescence peak position λ according to quantum dot
0=585nm, adopting conventional film is that method for designing is designed logical peak position of band and the on all four optical microcavity film of this fluorescence peak position system, the microcavity film is:
(LH)
114L(HL)
11，
Wherein H is high index of refraction Nb
2O
5Rete, L are low-refraction SiO
2Rete.The transmission spectrum of designed optical microcavity is shown in the solid line among Fig. 2, dotted line among Fig. 2 is the luminous spectrum of laser diode, when selecting laser diode, its luminous peak position λ should be swashed to be chosen in and be positioned at the high regional transmission that the optical microcavity film is the shortwave direction, so that exciting light enters into resonant cavity layer, excitation quantum point is luminous.To select luminous peak position be that laser diode 1 chip of 506nm is as substrate 101 to present embodiment with reference to the accompanying drawings.
2. the preparation of luminous component
A. adopt conventional optical thin film to be coated with method successively with film system (LH)
11, 2L is coated with on the laser diode chip 101, ends plated film then;
B. the quantum dot solution that the concentration of chemical method growth is lower than nmol/L by even glue, spraying, means such as brush or dip and be coated on the above-mentioned 2L rete.After treating solvent evaporates, continuing is 2L and (HL) successively with film again
11Plated, finished being coated with of optical microcavity film system, this moment, quantum dot 202 dispersions were embedded in the middle of the resonant cavity layer.
C. adopt electron beam lithography then and induce the method for coupled plasma etching to fasten at the microcavity film, etching is the cylindrical air column 203 of triangular lattice periodic distribution around the close cavity, forms the three-dimensional optical microcavity 2 of quantum dot embedding.
3. a single photon can be seen through, but the filter 3 that the exciting light wave band reflects fully sticks on the three-dimensional optical microcavity 2.Filter 3 also can be the shortwave edge filter, when promptly the bonding photon sees through the light of single photon wavelength with short-wave band all filtered, and, single-photon source is formed interference to guarantee that exciting light can not transmit.
4. extraction electrode 102 on substrate 101 connects with the mains 103 and mains switch 104, constitutes controlled laser diode 1, finally finishes the making of portable minisize single-photon light source.
Claims (1)
1. a mini single-photon light source comprises: exciting light part, luminous component and filter; It is characterized in that:
Exciting light partly is a laser diode (1), and luminous component is the three-dimensional optical microcavity (2) of quantum dot embedding; As substrate (101), on substrate, be equipped with the three-dimensional optical microcavity (2) of the quantum dot embedding that forms by plated film and lithographic method with the chip of laser diode, on microcavity (2), be equipped with and filter (3);
The three-dimensional optical microcavity of said quantum dot embedding (2) is embedded in the quantum dot (202) in the microcavity by microcavity film system (201), constitutes near being carved with the cylindrical air column (203) that is the triangular lattice periodic distribution around the cavity; The degree of depth of air column (203) is the thickness of microcavity film system (201);
Said microcavity film is that (201) structure is:
(LH)
mnL(HL)
m，
Wherein (LH)
mBe the following reflectance coating system (2011) of microcavity, nL is the resonant cavity layer (2012) of microcavity, (HL)
mBe the last reflectance coating system (2013) of microcavity, L is a low-index film, and H is a high refractive index layer, and m is the alternative stacked number of times of L and H, m 〉=6, and n is 2 integral multiple, n 〉=2, the thickness of L and H rete is λ
0/ 4, λ
0Fluorescence peak position for quantum dot;
Said quantum dot (202) is embedded in the centre of resonant cavity layer (2012);
Said filter (3) is a bandpass filter that single photon can see through, or the shortwave edge filter.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100252747A CN1327580C (en) | 2005-04-21 | 2005-04-21 | Mini single-photon light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100252747A CN1327580C (en) | 2005-04-21 | 2005-04-21 | Mini single-photon light source |
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| Publication Number | Publication Date |
|---|---|
| CN1702926A true CN1702926A (en) | 2005-11-30 |
| CN1327580C CN1327580C (en) | 2007-07-18 |
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|---|---|---|---|
| CNB2005100252747A Expired - Fee Related CN1327580C (en) | 2005-04-21 | 2005-04-21 | Mini single-photon light source |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100464472C (en) * | 2007-04-05 | 2009-02-25 | 南京大学 | Method for producing photo quantum-point by gas-phase conformal thin-film growth |
| WO2009105814A1 (en) * | 2008-02-25 | 2009-09-03 | The University Of Melbourne | A single photon emission system |
| CN104538842A (en) * | 2014-12-09 | 2015-04-22 | 中国科学院上海技术物理研究所 | Quantum dot embedded integrated micro-cavity monochromatic light source array |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5838870A (en) * | 1997-02-28 | 1998-11-17 | The United States Of America As Represented By The Secretary Of The Air Force | Nanometer-scale silicon-on-insulator photonic componets |
| US6711200B1 (en) * | 1999-09-07 | 2004-03-23 | California Institute Of Technology | Tuneable photonic crystal lasers and a method of fabricating the same |
| WO2002056238A2 (en) * | 2000-12-15 | 2002-07-18 | Board Of Trustees Of The Leland Stanford Junior University | Quantum-dot triggered photon and triggered photon pair |
| US7292613B2 (en) * | 2002-07-30 | 2007-11-06 | The Board Of Trustees Of The Leland Stanford Junior University | Half-wavelength micropost microcavity with electric field maximum in the high-refractive-index material |
| WO2004074173A1 (en) * | 2003-02-20 | 2004-09-02 | Seoul National University Industry Foundation | Method of forming quantum layer and patterned structure by multiple dip-coating process |
-
2005
- 2005-04-21 CN CNB2005100252747A patent/CN1327580C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100464472C (en) * | 2007-04-05 | 2009-02-25 | 南京大学 | Method for producing photo quantum-point by gas-phase conformal thin-film growth |
| WO2009105814A1 (en) * | 2008-02-25 | 2009-09-03 | The University Of Melbourne | A single photon emission system |
| CN104538842A (en) * | 2014-12-09 | 2015-04-22 | 中国科学院上海技术物理研究所 | Quantum dot embedded integrated micro-cavity monochromatic light source array |
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| Publication number | Publication date |
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| CN1327580C (en) | 2007-07-18 |
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| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Shanghai vision automatic control system Co., Ltd. Assignor: Shanghai Inst. of Technical Physics, Chinese Academy of Sciences Contract fulfillment period: 2008.12.15 to 2014.3.31 contract change Contract record no.: 2009310000002 Denomination of invention: Mini single-photon light source Granted publication date: 20070718 License type: Exclusive license Record date: 2009.1.7 |
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Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.12.15 TO 2014.3.31; CHANGE OF CONTRACT Name of requester: SHANGHAI SIZHENG AUTOMATIC CONTROL SYSTEM CO., LTD Effective date: 20090107 |
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