CN111261761B - Pseudo single photon source and preparation method - Google Patents
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Abstract
The embodiment of the invention provides a pseudo single photon source and a preparation method thereof, wherein the pseudo single photon source comprises the following steps: the back electrode layer, the substrate layer and the pseudo single photon source array are sequentially overlapped; the pseudo single photon source array comprises a first insulating layer, a metal shading layer, a second insulating layer and an electrode layer which are sequentially overlapped; the first insulating layer is provided with a first light through hole, the metal shading layer is provided with a second light through hole, the second insulating layer is provided with a third light through hole, and the electrode layer is provided with a wire grid; first light through hole, second light through hole, third light through hole and wire grid are concentric circles, and the size of second light through hole, third light through hole and wire grid reduces in proper order. The semiconductor active layer is used for emitting light, and the shading layer is prepared on the semiconductor active layer to shade stray light, so that the linear polarization output of the light is realized. The structure can realize integration on a chip, form pseudo single photon source arrays with different polarization directions, and realize independent output of various linear polarization single photons by controlling input currents of various light sources in the arrays.
Description
Technical Field
The invention relates to the technical field of quantum information, in particular to a pseudo single photon source and a preparation method thereof.
Background
The quantum key distribution is a method for ensuring the communication security by utilizing the equal quantum characteristics of the Heisebarg uncertainty principle and the quantum state unclonable principle to enable two communication parties to generate and share a random key which cannot be intercepted. In the process of realizing quantum key distribution, photons are generally used as carriers of quantum states. In the development of the theory related to quantum key distribution, the most classical communication protocol is the BB84 protocol proposed by Bennett and Brassard in 1984, which uses the polarization state of a photon, and two communication parties respectively generate and receive a photon sequence, and the photon is randomly in one of four polarization states (horizontal polarization "H", vertical polarization "V", positive 45 ° linear polarization "+", negative 45 ° linear polarization "-"), and the photon can be detected only by using one of two measurement bases, i.e., "HV" or "+ -", and the measurement base does not coincide with the measured photon, and the exact polarization direction of the photon cannot be known, and once the photon is detected, the polarization state of the photon cannot be copied. Thus, the two communicating parties can obtain the key by sharing the measurement base sequence in the conventional channel, and an eavesdropper cannot know the key.
In order to realize the BB84 protocol, a single-photon source with linear polarization output is required at the communication transmitting end. At present, quantum key distribution is mainly applied to long-distance communication, a metropolitan area quantum key distribution network is built by using optical fibers as channels, and communication with a quantum satellite is realized by using free space as channels. The single photon source used in these application examples is large in size and high in cost, is not suitable for being applied to portable equipment, and limits the application of the quantum key distribution technology to the communication of the portable equipment. Developing quantum key distribution systems for portable devices places new demands on the size and integration of single photon sources.
In an ideal situation, a single photon source needs to satisfy some strict conditions, such as being able to emit a single photon at any time according to requirements, having no absence of photons or multiple photons, having independence and indistinguishability of emitted photons, having a high repetition rate, etc., but in an actual design implementation process, it is generally difficult to achieve. Currently, the most commonly used single photon source is a pseudo single photon source obtained by attenuating laser pulses in a specific polarization state to a single photon level by using a laser attenuation method. The method has the advantages of large energy loss, low repetition rate, easy existence of multi-photon condition, simple realization and suitability for quantum key distribution application adopting decoy state protocol. To minimize the multiphoton condition, the average number of photons contained in a single pulse is generally controlled to be about 0.1. At present, by applying a tiny optical element and an optical chip to integrate, the size of the pseudo single photon source based on the laser attenuation method can be reduced to the order of several centimeters, but the size requirement of portable equipment for a miniaturized pseudo single photon source cannot be met. On the other hand, the semiconductor light emitting diode emits light with low coherence, and the photon number statistics of the single photon wave packet after attenuation meets the thermal statistical distribution. Theories have shown that a pseudo single photon source outputting a thermally statistically distributed single photon wave packet can be applied to quantum key distribution using a decoy state protocol.
However, how to realize a miniaturized pseudo-single photon source is a technical problem to be solved urgently in the field.
Disclosure of Invention
Embodiments of the present invention provide a pseudo single photon source and a manufacturing method thereof, so as to solve the technical problems mentioned in the above background art, or at least partially solve the technical problems mentioned in the above background art.
In a first aspect, an embodiment of the present invention provides a pseudo single photon source, including: the back electrode layer, the substrate layer and the pseudo single photon source array are sequentially overlapped;
the pseudo single photon source array comprises a first insulating layer, a metal shading layer, a second insulating layer and an electrode layer which are sequentially overlapped;
the first insulating layer is provided with a first light through hole, the metal shading layer is provided with a second light through hole, the second insulating layer is provided with a third light through hole, and the electrode layer is provided with a wire grid;
first light through hole, second light through hole, third light through hole and the wire grid is the concentric circles, just second light through hole, third light through hole with the size of wire grid reduces in proper order.
More specifically, the substrate layer has one or more pseudo single photon source arrays thereon.
More specifically, the back electrode layer and the electrode layer are made of chromium, gold or aluminum.
More specifically, the second light through hole is a circular hole;
wherein the diameter of the circular hole ranges from 5 micrometers to 100 micrometers.
More specifically, the substrate layer is a semiconductor material with an active light emitting layer.
In a second aspect, an embodiment of the present invention provides a method for preparing a pseudo single photon source, including:
preparing a first insulating layer on the substrate light-emitting layer side through silicon dioxide; preparing a metal shading layer with a second light through hole on the first insulating layer, and preparing a second insulating layer on the metal shading layer through silicon dioxide;
performing corrosion treatment on silicon dioxide in the metal shading layer hole by using a wet corrosion method to obtain a first insulating layer with a first light through hole and a second insulating layer with a third light through hole, wherein the first light through hole, the second light through hole and the third light through hole are concentric circles, and the diameters of the first light through hole and the third light through hole are smaller than that of the second light through hole;
generating an electrode layer on the second insulating layer, etching the wire grid on the electrode layer, and generating a back electrode on the back surface of the substrate luminescent layer;
wherein, the wire grid and the third light passing hole are concentric circles, and the diameter of the wire grid is smaller than that of the third light passing hole.
More specifically, the step of preparing the first insulating layer by using silicon dioxide on the substrate light-emitting layer side specifically includes:
and growing silicon dioxide on the substrate by adopting a PECVD (plasma enhanced chemical vapor deposition) process to obtain a first insulating layer.
More specifically, the step of preparing the metal light shielding layer with the second light passing hole on the first insulating layer specifically includes:
and growing metal chromium on the first insulating layer by adopting a magnetron sputtering coating process to obtain a metal shading layer with a second light through hole.
More specifically, the step of forming an electrode layer on the second insulating layer specifically includes:
and sequentially growing a layer of chromium and a layer of gold on the second insulating layer by using a magnetron sputtering coating process to obtain an electrode layer.
More specifically, the step of generating the back electrode on the back surface of the substrate light-emitting layer includes:
and sequentially growing a layer of titanium and a layer of gold as a back electrode on the back surface of the substrate luminescent layer by adopting an electron beam evaporation coating process.
The pseudo single photon source and the preparation method thereof provided by the embodiment of the invention have the advantages that the semiconductor active layer is utilized for emitting light, the shading layer is prepared on the semiconductor active layer for shading stray light, the shading effect is good, the stray light is basically avoided, the two insulation layers respectively prevent an epitaxial wafer from being conducted with the shading layer and the shading layer from being conducted with electrodes, the electrode layer is used for supplying power and is used as a wire grid polarizer to realize the linear polarization output of light, a plurality of pseudo single photon source arrays are prepared on each same substrate, each pseudo single photon source in the arrays can have different wire grid polarization directions, the independent electrodes can realize the output of the pseudo single photon sources in the corresponding linear polarization directions by selecting the power supply to the specific electrodes, the structure can realize the integration on the chip to form the pseudo single photon source arrays in the different polarization directions, the independent output of various linear polarization single photons can be realized by controlling the input current of, the method can be used in the fields of quantum key distribution and the like.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a pseudo single photon source configuration as described in one embodiment of the present invention;
FIG. 2 is a schematic top view of a pseudo single photon source according to one embodiment of the present invention;
FIG. 3 is a flow chart of a method for producing a pseudo single photon source as described in an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
FIG. 1 is a schematic diagram of a pseudo single photon source configuration as described in one embodiment of the present invention, as shown in FIG. 1, including: the array comprises a back electrode layer 2, a substrate layer 1 and a pseudo single photon source array which are sequentially superposed, wherein the pseudo single photon source array comprises a first insulating layer 4, a metal shading layer 3, a second insulating layer 5 and an electrode layer 6 which are sequentially superposed; a first light through hole is formed in the first insulating layer 4, and a second light through hole 8 is formed in the metal shading layer 3; the second insulating layer 5 is provided with a third light through hole 9, and the electrode layer 6 is provided with a wire grid 7;
the first insulating layer 4 is used for preventing the metal shading layer 3 from being in contact conduction with the surface of the substrate 1; the second insulating layer 5 is used to prevent the metallic shading layer 3 and the electrode layer 6 from being in contact conduction.
In the embodiment of the invention, the first light through hole, the second light through hole, the third light through hole and the wire grid are concentric circles, that is, a single photon can be output through the light through holes, and the diameter of the second light through hole is larger than that of the first light through hole and that of the third light through hole, that is, the metal shading layer is still wrapped between the two insulating layers, and the size of the wire grid is smaller than that of the first light through hole and that of the third light through hole.
FIG. 2 is a schematic top view of a pseudo single photon source according to an embodiment of the invention, as shown in FIG. 2, including: the center of the electrode 11 is a light-emitting position, the size and the shape of the metal shading layer 12 can be specifically adjusted according to requirements, the second light through hole 15 reserved by the metal shading layer, the light through holes 14 reserved by the two insulating layers and the size of the wire grid 13 are sequentially reduced, and the shading layer is completely wrapped by the insulating layers.
Specifically, the physical mechanism of the pseudo-single photon source described in the embodiment of the invention is that a semiconductor active layer emits light, and a semiconductor light-emitting substrate layer containing a PN junction or a quantum well active layer is adopted for preparation.
The embodiment of the invention adopts electric excitation to emit light, utilizes the semiconductor light emitting diode to emit light, prepares a shading layer on the semiconductor light emitting diode to shade stray light, and loads voltage on two sides of an electrode layer and a back electrode to enable photons to be output from a metal wire grid on the electrode layer in a linear polarization single photon wave packet.
On the basis of the above embodiment, one or more pseudo single photon source arrays are prepared on the substrate layer.
Specifically, the plurality of photon source arrays described in the embodiments of the present invention may have different wire grid polarization directions, and each pseudo single photon source array has an independent electrode layer, that is, a pseudo single photon source may prepare a plurality of pseudo single photon source arrays on the same substrate, and the output of the pseudo single photon source in a corresponding linear polarization direction may be realized by selectively supplying power to a specific electrode.
The structure of the embodiment of the invention can realize integration on a chip, forms independent output of single photons with different polarizations, can realize output of a pseudo-point photon source in a corresponding linear polarization direction by selecting power supply to a specific electrode, and can be used in the field of quantum key distribution.
On the basis of the above embodiment, the material used for the back electrode layer and the electrode layer is chromium, gold, or aluminum.
Specifically, the back electrode layer and the electrode layer described in the embodiment of the present invention are made of a metal with good conductivity, including gold, aluminum, titanium, or a metal with good conductivity made of an alloy.
On the basis of the above embodiment, the second light through hole is a circular hole;
wherein the diameter of the circular hole ranges from 5 micrometers to 100 micrometers.
On the basis of the above-described exemplary embodiments, the substrate layer is a semiconductor material with an active layer.
Specifically, the substrate layer material described in the embodiments of the present invention may refer to gallium arsenide, indium phosphide, and semiconductor compound crystals of the same material system with an active layer.
In another embodiment of the invention, the pseudo single photon source is realized by preparing a silicon dioxide insulating layer on one side of the substrate layer close to the luminescent layer; preparing a light shielding layer with a hole structure on the insulating layer; preparing a silicon dioxide insulating layer on the light shielding layer; etching off the silicon dioxide at the central part in the light shielding layer hole by adopting a wet etching method to expose the substrate and ensure that the light shielding layer is still wrapped in the silicon dioxide; preparing an electrode layer on the shading layer to enable the electrode layer to cover the hole etched by the silicon dioxide wet method and to be in contact with the substrate; preparing a metal wire grid structure at the part of the electrode layer, which is contacted with the substrate; a back electrode is prepared on the other side of the substrate.
FIG. 3 is a flow chart of a method for preparing a pseudo single photon source as described in an embodiment of the present invention, as shown in FIG. 3, comprising:
s1, preparing a first insulating layer on the light emitting side of the substrate layer through silicon dioxide; preparing a metal shading layer with a second light through hole on the first insulating layer, and preparing a second insulating layer on the metal shading layer through silicon dioxide;
s2, performing corrosion treatment on the silicon dioxide in the metal shading layer hole by using a wet corrosion method to obtain a first insulating layer with a first light through hole and a second insulating layer with a third light through hole, wherein the first light through hole, the second light through hole and the third light through hole are concentric circles, and the diameters of the first light through hole and the third light through hole are smaller than that of the second light through hole;
s3, forming an electrode layer on the second insulating layer, etching the wire grid on the electrode layer, and forming a back electrode on the back of the substrate luminescent layer;
wherein, the wire grid and the third light passing hole are concentric circles, and the diameter of the wire grid is smaller than that of the third light passing hole.
Specifically, in the embodiment of the invention, a gallium arsenide epitaxial wafer with an active layer is used as a substrate layer, a first insulating layer is obtained by growing silicon dioxide on the substrate through a light emitting test by adopting a PECVD process, a metal chromium is grown on the first insulating layer by adopting a magnetron sputtering coating process to obtain a metal shading layer with a second light through hole, the diameter of the second light through hole can be 48 microns, a silicon dioxide insulating layer is further grown on the metal shading layer, the process is the same as that of the previous insulating layer to obtain a second insulating layer, the specific process is the same as that of the previous insulating layer, after the two insulating layers are obtained, a light through hole is corroded in the center of the two insulating layers by adopting wet corrosion to obtain a third light through hole and a first light through hole, the third light through hole and the first light through hole are concentric circles with the second light through hole of the shading layer, and the diameters of; sequentially growing a layer of chromium and a layer of gold on the second insulating layer by using a magnetron sputtering coating process to obtain an electrode layer, etching the wire grid on the electrode layer by using FIB (focused ion beam) etching, and generating a back electrode on the back surface of the substrate luminescent layer; the wire grid and the third light through hole are concentric circles, the diameter of the wire grid is smaller than that of the third light through hole, for example, the shape of the wire grid can be a circle with the diameter of 15 micrometers, and then a layer of titanium and a layer of gold are sequentially grown on the back surface of the substrate luminescent layer by adopting an electron beam evaporation coating process to serve as a back electrode.
The embodiment of the invention has higher luminous efficiency, good shading effect and basically no stray light influence, the output light has linear polarization characteristic, and if the output light is integrated into a light source array, because the control of each light source is mutually independent, the embodiment of the invention has higher generation rate of single photon wave packets in different linear polarization directions and is suitable for application in quantum key distribution.
The above-described embodiments of the apparatus are merely illustrative, and the units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment. One of ordinary skill in the art can understand and implement it without inventive effort.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (9)
1. A pseudo single photon source, comprising: the back electrode layer, the substrate layer and the pseudo single photon source array are sequentially overlapped;
the pseudo single photon source array comprises a first insulating layer, a metal shading layer, a second insulating layer and an electrode layer which are sequentially overlapped;
the first insulating layer is provided with a first light through hole, the metal shading layer is provided with a second light through hole, the second insulating layer is provided with a third light through hole, and the electrode layer is provided with a wire grid;
the first light through hole, the second light through hole, the third light through hole and the wire grid are concentric circles, and the sizes of the second light through hole, the third light through hole and the wire grid are sequentially reduced;
wherein the substrate layer is made of a semiconductor material with an active light emitting layer.
2. The pseudo-single photon source as in claim 1, wherein one or more arrays of pseudo-single photon sources are on the substrate layer.
3. The pseudo single photon source as in claim 1, wherein the back electrode layer and the electrode layer are made of chromium, gold or aluminum.
4. The pseudo single photon source as in claim 1, wherein the second through hole is a circular hole;
wherein the diameter of the circular hole ranges from 5 micrometers to 100 micrometers.
5. A method for preparing a pseudo single photon source, comprising:
preparing a first insulating layer on the light-emitting side of the substrate layer through silicon dioxide; preparing a metal shading layer with a second light through hole on the first insulating layer, and preparing a second insulating layer on the metal shading layer through silicon dioxide;
performing corrosion treatment on silicon dioxide in the metal shading layer hole by using a wet corrosion method to obtain a first insulating layer with a first light through hole and a second insulating layer with a third light through hole, wherein the first light through hole, the second light through hole and the third light through hole are concentric circles, and the diameters of the first light through hole and the third light through hole are smaller than that of the second light through hole;
generating an electrode layer on the second insulating layer, etching the wire grid on the electrode layer, and generating a back electrode on the back of the light-emitting side of the substrate layer;
the wire grid and the third light passing hole are concentric circles, and the diameter of the wire grid is smaller than that of the third light passing hole;
wherein the substrate layer is made of a semiconductor material with an active light emitting layer.
6. The method for preparing a pseudo single photon source according to claim 5, wherein the step of preparing the first insulating layer on the light emitting side of the substrate layer by using silicon dioxide comprises:
and growing silicon dioxide on the light-emitting side of the substrate layer by adopting a PECVD (plasma enhanced chemical vapor deposition) process to obtain a first insulating layer.
7. The method for preparing a pseudo single photon source according to claim 5, wherein the step of preparing the metal light shielding layer with the second through hole on the first insulating layer specifically comprises:
and growing metal chromium on the first insulating layer by adopting a magnetron sputtering coating process to obtain a metal shading layer with a second light through hole.
8. The method for preparing a pseudo single photon source as in claim 5, wherein the step of forming an electrode layer on the second insulating layer comprises:
and sequentially growing a layer of chromium and a layer of gold on the second insulating layer by using a magnetron sputtering coating process to obtain an electrode layer.
9. The method of fabricating a pseudo single photon source as in claim 5 wherein said step of creating a back electrode on the back side of the light emitting side of the substrate layer comprises:
and sequentially growing a layer of titanium and a layer of gold as a back electrode on the back of the light-emitting side of the substrate layer by adopting an electron beam evaporation coating process.
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| CN1621813A (en) * | 2004-12-23 | 2005-06-01 | 北京源德生物医学工程有限公司 | Standard light source for single photon counting instrument |
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