JP2016018966A - Semiconductor optical element and element dispersion solution - Google Patents

Abstract

PROBLEM TO BE SOLVED: To uniformly disperse semiconductor optical element including a magnetic material into a solvent.SOLUTION: A semiconductor optical element is a semiconductor element layer having an optical function and includes: a semiconductor element layer having a first surface and a second surface opposite to the first surface; ferromagnetic layer which is arranged on the semiconductor element layer on the first surface side and includes a ferromagnetic material; and a diamagnetic layer which is arranged on the semiconductor element layer on the second surface side and includes a diamagnetic material.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a semiconductor optical element containing a magnetic material, and an element dispersion solution in which the semiconductor optical element is dispersed in a solvent.

  Patent Document 1 discloses a method of mounting a semiconductor element at a predetermined position on a substrate by dispersing the semiconductor element (transistor or the like) in a solvent and dropping the solvent on the substrate. .

  In Patent Document 2, a mounting substrate is immersed in a solvent in which a plurality of semiconductor elements (light emitting diodes) are scattered, and an electric field gradient is formed corresponding to a position where the mounting substrate is to be mounted. A method of simultaneous implementation in a single process is disclosed. Also disclosed is a method for controlling the arrangement (mounting) direction of the semiconductor element by providing a ferromagnetic body or the like in the semiconductor element and applying a magnetic field to the semiconductor element arranged on the mounting substrate.

JP 2007-059559 A JP 2001-257218 A

  A case is assumed where a solvent in which a semiconductor element containing a magnetic material is dispersed (referred to as an element dispersion solution) is dropped on a substrate and the semiconductor element is to be mounted on the substrate. In this case, in the element dispersion solution, the semiconductor elements gather due to magnetic attraction, and the semiconductor elements may not be uniformly dispersed. For this reason, when the element dispersion solution is sequentially dropped onto the substrate, there is a concern that the number of semiconductor elements contained in each droplet of the element dispersion solution is not uniform.

  A main object of the present invention is to uniformly disperse a semiconductor element containing a magnetic material, particularly a semiconductor optical element, in a solvent.

  According to a main aspect of the present invention, a semiconductor element layer having an optical function, the semiconductor element layer including a first surface and a second surface facing the first surface, and the semiconductor element layer A ferromagnetic layer including a ferromagnetic material and a diamagnetic layer including a diamagnetic material disposed on the second surface side of the semiconductor element layer. A semiconductor optical element is provided.

  A semiconductor optical element containing a magnetic material can be uniformly dispersed in a solvent.

1A to 1C are cross-sectional views showing how a semiconductor optical element according to Example 1 is manufactured. 2A to 2C are cross-sectional views illustrating how the semiconductor optical element according to the first embodiment is manufactured. 3A to 3C are cross-sectional views illustrating how the semiconductor optical element according to the first embodiment is manufactured. 4A and 4B are schematic views showing a state in which the semiconductor optical element according to Example 1 is manufactured. 5A and 5B are a cross-sectional view and a schematic view showing a completed semiconductor optical device according to Example 1. FIG. FIG. 6 is a schematic perspective view showing a state in which the semiconductor optical element according to Example 1 is mounted on a substrate. 7A and 7B are a cross-sectional view and a plan view showing a modification of the semiconductor optical element according to the first embodiment. 8A to 8C are cross-sectional views showing how the semiconductor optical element according to Example 2 is manufactured. 9A to 9C are a cross-sectional view and a plan view showing the completed semiconductor optical element according to the second embodiment.

  With reference to FIGS. 1-4, the manufacturing method of the semiconductor optical element by Example 1 is demonstrated. At the same time, a method for producing an element dispersion solution in which the semiconductor optical element is dispersed in a solvent will be described. In the following, a light emitting element (light emitting diode, LED element) using a GaN-based semiconductor will be described as an example of a semiconductor optical element. The semiconductor optical element may be a light receiving element (photodiode) in addition to the light emitting element, and may be any semiconductor element having an optical function such as light emission or light reception.

  1A to 1C are cross-sectional views showing a state in which the optical semiconductor stack 20, the (p-side) electrode layer 31, the ferromagnetic layer 33, and the like are formed on the growth substrate 11. FIG.

  First, a C-plane sapphire substrate is prepared as the growth substrate 11. In addition to the sapphire substrate, a spinel substrate, a ZnO (zinc oxide) substrate, or the like can be used as the growth substrate 11. Thereafter, the growth substrate 11 is thermally cleaned. Specifically, the growth substrate 11 is heated at 1000 ° C. for 10 minutes in a hydrogen atmosphere.

Next, as shown in FIG. 1A, Al _x In _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y) is formed on the growth substrate 11 by MOCVD (metal organic chemical vapor deposition) or the like. A GaN-based semiconductor layer (optical semiconductor stack 20) expressed by ≦ 1) is formed.

Specifically, first, the substrate temperature is set to 500 ° C., TMG (trimethylgallium) is supplied at a flow rate of 10.4 μmol / min, and NH ₃ is supplied at a flow rate of 3.3 SLM for 3 minutes. As a result, a buffer layer made of GaN grows on the growth substrate 11. Subsequently, the substrate temperature is set to 1000 ° C. to crystallize the buffer layer.

Thereafter, while maintaining the substrate temperature, TMG is supplied at a flow rate of 45 μmol / min and NH ₃ is supplied at a flow rate of 4.4 SLM for 20 minutes. Thereby, an underlayer made of GaN grows on the buffer layer. The buffer layer and the base layer constitute the base buffer layer 21.

Thereafter, while maintaining the substrate temperature, TMG is supplied at a flow rate of 45 μmol / min, NH ₃ is supplied at a flow rate of 4.4 SLM, and SiH ₄ is supplied at a flow rate of 2.7 × 10 ⁻⁹ μmol / min for 120 minutes. As a result, a Si-doped GaN layer (n-type GaN layer) having a thickness of about 7 μm is grown on the underlying buffer layer 21. The n-type GaN layer constitutes the n-type semiconductor layer 22.

Thereafter, the substrate temperature is set to 700 ° C., TMG is supplied at a flow rate of 3.6 μmol / min, TMI (trimethylindium) is supplied at a flow rate of 10 μmol / min, and NH ₃ is supplied at a flow rate of 4.4 SLM for 33 seconds. A well layer (with a thickness of about 2.2 nm) is grown. Subsequently, the supply of TMI is stopped, TMG and NH ₃ are supplied for 320 seconds, and a barrier layer (layer thickness of about 15 nm) made of GaN is grown. Then, the growth of the well layer and the barrier layer is repeated alternately (for example, for five periods) to form the active layer 23 having a multiple quantum well structure on the n-type semiconductor layer 22.

Thereafter, the substrate temperature is set to 870 ° C., TMG is supplied at a flow rate of 8.1 μmol / min, TMA (trimethylaluminum) is supplied at a flow rate of 7.5 μmol / min, NH ₃ is supplied at a flow rate of 4.4 SLM, and 2.9 × 10. CP2Mg (biscyclopentadienylmagnesium) is supplied for 5 minutes at a flow rate of ⁻⁷ μmol / min. As a result, an Mg-doped AlGaN layer (p-type AlGaN layer) having a thickness of about 40 nm is grown on the active layer 23. Subsequently, the supply of TMA is stopped, and TMG is supplied at a flow rate of 18 μmol / min, NH ₃ is supplied at a flow rate of 4.4 SLM, and CP2Mg is supplied at a flow rate of 2.9 × 10 ⁻⁷ μmol / min for 7 minutes. . Thereby, an Mg-doped GaN layer (p-type GaN layer) having a thickness of about 150 nm is grown on the p-type AlGaN layer. The p-type AlGaN layer and the p-type GaN layer constitute the p-type semiconductor layer 24.

  As described above, the optical semiconductor stack 20 in which the n-type semiconductor layer 22, the active layer 23, and the p-type semiconductor layer 24 are sequentially stacked is formed on the growth substrate 11 via the base buffer layer 21.

  Next, the p-side electrode layer 31 having light reflectivity is formed on the optical semiconductor stack 20 (p-type semiconductor layer 24) by an electron beam evaporation method or a sputtering evaporation method (lift-off method) using a resist mask. The p-side electrode layer 31 is made of, for example, a metal multilayer film of Pt film / Ag film / Ti film / Pt film / Au film. The thickness of the p-side electrode layer 31 is, for example, about 550 nm. The planar shape of the p-side electrode layer 31 is, for example, a square shape.

  Next, a protective cap layer 32 that covers the p-side electrode layer 31 is formed by a lift-off method. The protective cap layer 32 is made of, for example, a metal multilayer film of Ti film / Pt film / Au film. The thickness of the protective cap layer 32 is, for example, about 400 nm.

  Next, a ferromagnetic layer 33 that covers the protective cap layer 32 is formed by a lift-off method. The ferromagnetic layer 33 includes a ferromagnetic material such as Fe, Ni, and Co. The thickness of the ferromagnetic layer 33 is, for example, about 500 nm. The ferromagnetic layer 33 may be provided between the p-side electrode layer 31 and the protective cap layer 32.

  Next, as shown in FIG. 1B, the optical semiconductor stack 20 around the ferromagnetic layer 33 is etched to a depth of about 1 μm by a dry etching method using a chlorine gas using a resist mask to form a first separation groove. 20da is formed. The first separation groove 20da defines a square-shaped region including, for example, a side of about 50 μm that includes the ferromagnetic layer 33 on the surface of the optical semiconductor stack 20.

Next, as shown in FIG. 1C, a protective insulating film 41 covering the inside of the isolation trench 20da is formed by a lift-off method. The protective insulating film 41 is made of, for example, SiO ₂ and has a layer thickness of, for example, about 100 to 600 nm.

  Here, the structure formed on the growth substrate 11 from the optical semiconductor laminate 20 to the insulating protective film 41 is referred to as a laminate member 61.

  2A to 2C are cross-sectional views showing a state in which the growth substrate 11 and the laminated member 61 are separated. In the subsequent drawings, the vertical relationship between the growth substrate 11 and the laminated member 61 in FIG. 1C is inverted.

  First, as shown in FIG. 2A, the temporary support member 12 is bonded to the surface of the laminated member 61. The temporary support member 12 has, for example, a structure in which a fusion layer containing a low melting point metal such as In is formed on the surface of the Si substrate. After the laminated member 61 and the temporary support member 12 are bonded together, the laminated member 61 and the temporary support member 12 are fused by heating.

  Next, as shown in FIG. 2B, the growth substrate 11 and the optical semiconductor stack 20 (laminated member 61) are separated by a laser lift-off method.

Specifically, KrF excimer laser light (wavelength 248 nm, irradiation energy density 800 to 900 mJ / cm ² ) is irradiated from the growth substrate 11 (sapphire substrate) side. The laser light passes through the growth substrate 11 and is absorbed by the underlying buffer layer 21 (GaN layer). The underlying buffer layer 21 is decomposed by the heat generated by the light absorption. As a result, the growth substrate 11 and the optical semiconductor stack 20 are separated, and the n-type semiconductor layer 22 is exposed.

  Next, as shown in FIG. 2C, the optical semiconductor stack 20 (laminated member 61) separated from the growth substrate is immersed in an alkaline solution at 65 ° C. to 75 ° C. for about 5 minutes. As a result, a fine concavo-convex layer 22m including a large number of fine convex structures (so-called micro cones) is formed on the exposed n-type semiconductor layer 22 surface. The formation of the fine uneven layer 22m contributes to an improvement in light extraction efficiency of the LED element (amount of light emitted to the outside of the LED element / amount of light emitted from the active layer).

  3A to 3C are cross-sectional views showing a state in which the n-side electrode layer 51 and the diamagnetic layer 52 are formed on the optical semiconductor stack 20, and the ferromagnetic layer 33 is saturated (spontaneously magnetized).

  First, as shown in FIG. 3A, an n-side electrode layer 51 having light reflectivity is formed on the optical semiconductor stack 20 (the fine uneven layer of the n-type semiconductor layer 22) by a lift-off method. The n-side electrode layer 51 is made of a metal multilayer film including, for example, a Ti film / Al film. Thereafter, in order to improve electrical contact (ohmicity) with the n-type semiconductor layer 22, RTA (rapid thermal annealing) treatment is performed at 500 ° C. for about 20 seconds.

  Next, a diamagnetic layer 52 is formed on the n-side electrode layer 51 by a lift-off method. The diamagnetic material layer 52 includes a diamagnetic material such as Bi, Al, Pb, Zn, or Ag. The thickness of the diamagnetic layer 52 is, for example, about 1200 nm.

  Next, a second separation groove 20db corresponding to the first separation groove 20da is formed in the optical semiconductor stack 20 (n-type semiconductor layer 22) by dry etching using chlorine gas using a resist mask. The etching depth is preferably a depth that does not completely divide the optical semiconductor stack 20 (not reach the first separation groove 20da).

  Next, as shown in FIG. 3B, a magnetic field is applied to the ferromagnetic layer 33 to cause the ferromagnetic layer 33 to undergo saturation magnetization (spontaneous magnetization). For example, the magnetic field is applied so that the outer side (lower side in the figure) of the ferromagnetic layer 33 constitutes the N pole and the inner side (upper side in the figure) of the ferromagnetic layer 33 constitutes the S pole. Thereby, the ferromagnetic layer 33 spontaneously generates a magnetic field.

  Next, as shown in FIG. 3C, the temporary support member 12 is peeled from the laminated member 61 on which the n-side electrode layer 51 and the diamagnetic layer 52 are formed by chemical etching. When the laminated member 61 and the temporary support member 12 are fused with In, for example, an etchant such as hydrochloric acid can be used. The structure completed so far will be referred to as an element connecting member 62.

  4A and 4B are schematic views showing a state in which the element connecting member 62 (the optical semiconductor laminate 20) is divided along the first to second separation grooves 20da and 20db to obtain individual LED elements 100. FIG. is there.

  First, as shown in FIG. 4A, the container 71 is filled with an organic solvent 72 such as isopropyl alcohol, and the element coupling member 62 is immersed in the organic solvent 72.

  Next, as shown in FIG. 4B, ultrasonic waves are applied to the organic solvent 72 in which the element coupling member 62 is immersed. The element coupling member 62 is divided into individual LED elements 100 by ultrasonic vibration. Specifically, the optical semiconductor stack 20 is divided along the separation grooves 20da and 20db (see FIGS. 4A to 3A), and the LED element 100 corresponding to the region defined by the separation grooves 20da and 20db in the element connecting member 62. Get. As a result, an element dispersion solution 73 in which the plurality of LED elements 100 are dispersed in the organic solvent 72 is obtained.

  FIG. 5A is a cross-sectional view showing the completed LED element 100. The LED element 100 mainly includes an optical semiconductor stack 20, a p-side electrode layer 31, a protective cap layer 32, a ferromagnetic layer 33, an n-side electrode layer 51, and a diamagnetic layer 52. . Here, a structure including the optical semiconductor stack 20, the p-side electrode layer 31, the protective cap layer 32, the n-side electrode layer 51, and the like is referred to as a light emitting element layer 63. The ferromagnetic layer 33 is disposed on the p-side electrode layer 31 side of the light emitting element layer 63. The diamagnetic layer 52 is disposed on the n-side electrode layer 51 side of the light emitting element layer 63.

  When a voltage is applied between the p-side electrode layer 31 (ferromagnetic layer 33) and the n-side electrode layer 51 (diamagnetic layer 52) (current flows), holes are injected into the p-type semiconductor layer 24. Electrons are injected into the n-type semiconductor layer 22 and the holes and electrons are recombined in the active layer 23. The energy for this recombination is emitted from the optical semiconductor stack 20 (particularly the active layer 23) as light (ultraviolet light or blue light when a GaN-based semiconductor is used for the optical semiconductor stack). When the p-side electrode layer 31 and the n-side electrode layer 51 have light reflectivity, the light emitted from the optical semiconductor stack 20 is mainly emitted from the side surfaces.

  FIG. 5B is a schematic diagram showing the magnetic polarization state (magnetization state) of the ferromagnetic layer 33 and the diamagnetic layer 52. The ferromagnetic layer 33 is saturated and magnetized, for example, the N pole on the outside and the S pole on the inside (see FIG. 3B). The diamagnetic layer 52 is magnetically polarized so that the outer side becomes the N pole and the inner side becomes the S pole under the influence of the magnetic field generated by the ferromagnetic layer 33. Thus, the LED element 100 has the same magnetic polarity (that is, configures an N pole) on both outer surfaces thereof. For this reason, the plurality of LED elements 100 in the organic solvent 72 repel each other, and the LED elements 100 are uniformly dispersed in the organic solvent 72 (see FIG. 4B).

  FIG. 6 is a schematic perspective view showing how the LED element 100 is mounted on the substrate 101. A desired electrode pattern 101a is formed on the surface of the substrate 101.

  An element dispersion solution 73 (see FIG. 4B) is dropped as a droplet 73a onto a position where the electrode pattern 101a is formed on the substrate 101 by a droplet discharge means 102 such as a dispenser or an inject head. At this time, it is preferable that the number of LED elements 100 included in the droplet 73a, that is, the number of LED elements 100 discharged in one discharge operation is one.

  The LED elements 100 are uniformly dispersed in the element dispersion solution 73. For this reason, by adjusting the density | concentration (density) of the LED element 100 in the solution 73, the amount (volume) of the solution 73 discharged by one discharge operation, etc., it discharges by one discharge operation. The number of LED elements 100 could be approximately one.

  Thereafter, the solvent portion of the droplet 73a is removed (evaporated), and the LED element 100 is mounted on the substrate 101 by leaving only the LED element 100 on the electrode pattern 101a. The mounting surface of the LED element 100 is applied by applying a magnetic field to the LED element 100 dropped on the substrate 101, that is, using a magnetic attractive force or repulsive force acting on the ferromagnetic layer 33 or the diamagnetic layer 52. You can also control and adjust the mounting direction.

  As described above, by using the LED element according to Example 1, the LED element can be uniformly dispersed in the solvent. Then, by using an element dispersion solution in which the LED elements according to Example 1 are dispersed in a solvent, when the solution is sequentially dropped onto the substrate, the number of LED elements contained in the liquid droplets is made substantially uniform. be able to.

  In the LED element 100 according to Example 1, the p-side electrode layer 31 and the n-side electrode layer 51 are made of conductive members having light reflectivity. Thereby, the light emitted from the optical semiconductor stack 20 is emitted mainly from the side surface. When it is desired to emit light from the upper surface (the surface of the n-type semiconductor layer 22) in addition to the side surface of the optical semiconductor stack 20, for example, indium tin oxide (ITO) or indium zinc oxide is applied to the n-side electrode layer 51. A light-transmitting conductive member such as an object (IZO) may be used.

  7A and 7B are a cross-sectional view and a plan view showing a modification of the LED element 100 according to the first embodiment. The VIIA-VIIA cross section in FIG. 7B corresponds to the cross sectional view shown in FIG. 7A.

  7A and 7B, the n-side electrode layer 51 is formed of a light-transmitting conductive member such as ITO or IZO. Further, the diamagnetic layer 52 is patterned including an opening 52 a that looks into the n-side electrode layer 51. Thereby, the light emitted from the optical semiconductor stack 20 can be emitted from the surface of the n-type semiconductor layer 22, that is, through the light-transmitting n-side electrode layer 51 from the opening 52 a of the diamagnetic layer 52. it can.

  In the LED element according to Example 1, the p-side electrode layer and the n-side electrode layer are formed on different surfaces of the optical semiconductor stack. However, the p-side electrode layer and the n-side electrode layer may be formed on the same surface of the optical semiconductor stack.

  Hereinafter, with reference to FIG. 8, the manufacturing method of the LED element 200 by Example 2 is demonstrated paying attention to the difference with the manufacturing method of the LED element 100 by Example 1. FIG.

  8A to 8C are cross-sectional views showing a state in which the semiconductor stacked layer 20, the p-side electrode layer 31, the n-side electrode layer 53, the ferromagnetic layer 33, and the like are formed on the growth substrate 11.

  First, as shown in FIG. 8A, an optical semiconductor stack 20 is formed on the growth substrate 11 by MOCVD or the like. The structure and manufacturing method of the optical semiconductor stack 20 are the same as those in the first embodiment.

Next, the optical semiconductor stack 20 is etched by a dry etching method using chlorine gas using a resist mask to form a first separation groove 20da that defines an arbitrary region. The first separation groove 20da is formed so as to penetrate the p-type semiconductor layer 24 and the active layer 23 and reach the n-type semiconductor layer 22. Thereafter, a protective insulating film 41 made of SiO ₂ is formed so as to cover the inside of the first separation groove 20da by a lift-off method.

  Next, the p-side electrode layer 31 is formed near the center of the region defined by the first separation groove 20da on the optical semiconductor stack 20 by the lift-off method. The p-side electrode layer 31 is in contact with the p-type semiconductor layer 24 on the surface of the optical semiconductor layer 20.

  Thereafter, a ferromagnetic layer 33 containing a ferromagnetic material is formed so as to cover the p-side electrode layer 31. A protective cap layer that covers the ferromagnetic layer 33 may be provided. In addition, a protective cap layer that covers the p-side electrode layer 31 may be provided before the ferromagnetic layer 33 is formed.

Next, as shown in FIG. 8B, the protective insulating film 41 and the n-type semiconductor layer 22 positioned on the bottom surface of the first separation groove 20da are formed by dry etching using a CF ₄ / Ar mixed gas using a resist mask. Etch the part. As a result, a contact groove 20dc is formed in the first separation groove 20da. Further, the n-type semiconductor layer 22 is exposed on the bottom surface of the first separation groove 20da.

  Next, as shown in FIG. 8C, the n-side electrode layer 55 is formed in the first isolation trench 20da (the surface of the protective insulating film 41) and in the contact trench 30dc by a lift-off method. The n-side electrode layer 55 is in contact with the n-type semiconductor layer 22 in the contact groove 20dc through the first separation groove 20da, that is, through the p-type semiconductor layer 24 and the active layer 23. The n-side electrode layer 55 is made of, for example, a conductive multilayer film of ITO film / Ag film / TiW film / Ti film / Pt film / Au film / Ti film.

  Thereafter, as in Example 1, the growth substrate 11 was peeled from the optical semiconductor stack 20 by a laser lift-off method, and a diamagnetic layer containing a diamagnetic material was formed on the exposed n-type semiconductor layer 22 surface. The ferromagnetic layer 33 is saturated and magnetized. Then, in the organic solvent, the optical semiconductor stack 20 is divided along the first separation groove 20da and the like. Thereby, the LED element 200 by Example 2 is completed.

  9A and 9B are cross-sectional views showing the completed LED element 200. FIG. In the LED element 200, the p-side electrode layer 31 and the n-side electrode layer 55 are formed on the p-type semiconductor layer 24 side of the optical semiconductor stack 20. The p-side electrode layer 31 is in contact with the surface of the p-type semiconductor layer 24, and the n-side electrode layer 55 is in contact with the n-type semiconductor layer 22 through the p-type semiconductor layer 24 and the active layer 23.

  In the LED element 200, as shown in FIG. 9A, the diamagnetic layer 56 may be formed on the n-type semiconductor layer 22 via a light reflection layer 57 containing Ag or the like, as shown in FIG. 9B. As shown, it may be formed directly on the n-type semiconductor layer 22 and patterned to include the opening 56a.

  FIG. 9C is a plan view showing the ferromagnetic layer 33 (p-side electrode layer 31) and the n-side electrode layer 55 on the surface of the optical semiconductor stack 20 (p-type semiconductor layer 24). The ferromagnetic layer 33 (p-side electrode layer 31) is formed at substantially the center of the surface of the optical semiconductor stack 20 (p-type semiconductor layer 24), and its planar shape is, for example, a circular shape. The n-side electrode layer 55 is formed so as to surround the ferromagnetic layer 33 with a gap from the ferromagnetic layer 33.

  Also in the LED element 200 according to the second embodiment, the magnetic polarities are the same on both outer surfaces (for example, N poles). For this reason, when the LED elements 200 are dispersed in the solvent, the LED elements 200 repel each other and are uniformly dispersed.

  As mentioned above, although the form for implementing this invention was demonstrated, this invention is not restrict | limited to these. For example, in the embodiment, in the optical semiconductor stack (or light emitting element layer), an example in which a ferromagnetic layer is formed on the p-type semiconductor layer side and a diamagnetic layer is formed on the n-type semiconductor layer side has been described. A diamagnetic layer may be formed on the p-type semiconductor layer side, and a ferromagnetic layer may be formed on the n-type semiconductor layer side. It will be apparent to those skilled in the art that other various modifications, improvements, combinations, and the like can be made.

DESCRIPTION OF SYMBOLS 11 ... Support substrate, 12 ... Growth substrate, 20 ... Optical semiconductor lamination | stacking, 21 ... Base buffer layer, 22 ... N type semiconductor layer, 23 ... Active layer, 24 ... P type semiconductor layer, 31 ... P side electrode layer, 32 ... Protective cap layer, 33 ... ferromagnetic layer, 41 ... protective insulating film, 51 ... n-side electrode layer, 52 ... diamagnetic layer, 55 ... n-side electrode layer, 56 ... diamagnetic layer, 57 ... light reflecting layer , 61 ... laminated member, 62 ... element connecting member, 63 ... light emitting element layer, 71 ... container, 72 ... organic solvent, 73 ... element dispersion solution, 100 ... LED element (Example 1), 101 ... mounting substrate, 102 ... Droplet discharging means, 200... LED element (Example 2).

Claims (8)

A semiconductor element layer having an optical function, the semiconductor element layer comprising a first surface and a second surface opposite to the first surface;
A ferromagnetic layer disposed on a first surface side of the semiconductor element layer and including a ferromagnetic material;
A diamagnetic layer disposed on the second surface side of the semiconductor element layer and including a diamagnetic material;
A semiconductor optical element. The semiconductor element layer is
an optical semiconductor stack in which a p-type semiconductor layer, a light-emitting active layer, and an n-type semiconductor layer are sequentially stacked;
A p-side electrode layer disposed on and in contact with the p-type semiconductor layer on the p-type semiconductor layer side of the optical semiconductor stack, and having light reflectivity;
Have
The ferromagnetic layer is disposed on the p-type semiconductor layer side of the optical semiconductor stack,
The diamagnetic layer is disposed on the n-type semiconductor layer side of the optical semiconductor stack,
The semiconductor optical element according to claim 1.   The semiconductor optical element according to claim 2, wherein the semiconductor element layer further includes an n-side electrode layer disposed in contact with the n-type semiconductor layer on the n-type semiconductor layer side of the optical semiconductor stack. The n-side electrode layer is light transmissive,
The semiconductor optical element according to claim 3, wherein the diamagnetic layer is patterned to include an opening in a plan view.   The semiconductor optical element according to claim 3, wherein the n-side electrode layer has light reflectivity.   The semiconductor element layer is further disposed on the p-type semiconductor layer side of the optical semiconductor stack with a gap from the p-side electrode layer, penetrating the p-type semiconductor layer and the active layer, and the n-type semiconductor layer An n-side electrode layer in contact with the semiconductor optical element according to claim 2.   The semiconductor optical element according to claim 1, wherein the ferromagnetic layer is saturated and magnetized. An element dispersion solution having a solvent and a plurality of semiconductor optical elements dispersed in the solvent,
Each of the plurality of semiconductor optical elements includes:
A semiconductor element layer having an optical function and comprising a first surface and a second surface facing the first surface;
A ferromagnetic layer disposed on the first surface side of the semiconductor element layer and including a ferromagnetic material saturated with magnetization;
A diamagnetic layer disposed on the second surface side of the semiconductor element layer and including a diamagnetic material;
including,
Element dispersion solution.

Images