JP2014090052A - Light-emitting element, light-emitting device and light-emitting device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting element which can easily perform alignment by utilizing a magnetic force when the light-emitting element is mounted on a mounting substrate and which is difficult to influence electrical characteristics.SOLUTION: A light-emitting element 10 comprises: a semiconductor light-emitting element structure 3 in which an n-type semiconductor layer 3a and a p-type semiconductor layer 3c are layered on a substrate 2 and an n-side electrode 3n and a p-side electrode 3p are formed; and an insulating reflective layer 6 for covering at least a mounting surface when the light-emitting element 10 is mounted on a mounting substrate 20. The reflective layer 6 contains a magnetic substance and has magnetized regions corresponding to magnetized regions of element mounting parts 22n, 22p.

Description

  The present invention relates to a light-emitting element having an insulating layer containing a magnetic material, a light-emitting device in which the light-emitting element is mounted on a mounting substrate, and a method for manufacturing the light-emitting device.

When an LED (light emitting diode) chip using a semiconductor such as a nitride semiconductor is mounted on a mounting board provided with a wiring pattern that is electrically connected to positive and negative electrodes, an electrode wiring pattern in which the electrode of the LED chip is provided on the mounting board It is necessary to position correctly.
For this positioning (alignment), a method using magnetic force is described in Patent Document 1 and Patent Document 2, for example.

  In Patent Document 1 (see paragraph 0040), a bump metal of a light emitting diode element is formed of nickel or the like and magnetized in a predetermined direction, and an element arrangement hole on an array substrate is magnetized in accordance therewith, or a magnetic field is externally applied. A method for controlling the orientation of the light-emitting diode element by adding the arrangement is described.

  Further, in Patent Document 2 (see, for example, paragraph 0015 and FIG. 1), when mounting a semiconductor chip in which electrode pads made of micro magnets are provided on the surface of a mounting substrate and connection bumps having magnetic force are provided. Describes a method of fixing the connection bump by the attractive force of the magnet of the electrode pad by positioning the connection bump on the electrode pad.

Japanese Patent Laid-Open No. 2005-174799 JP-A-7-78828

  However, when the magnetic material is included in the electrode as in the methods described in Patent Document 1 and Patent Document 2, the contact between the electrode of the LED chip and the semiconductor layer is particularly large when the content of the magnetic material is increased. Good ohmic properties of resistance and contact resistance between electrodes may not be obtained. For this reason, there exists a possibility that the electrical property of LED chip itself or the light-emitting device which mounted the LED chip on the mounting substrate may fall. In addition, depending on the combination of the conductive material and the magnetic material used in the electrode or wiring pattern, the electrode or wiring pattern is likely to rust, and the reliability of the LED chip or the light emitting device may be reduced.

  The present invention was devised in view of such problems, and when a light emitting device such as an LED is mounted on a mounting substrate to manufacture a light emitting device, alignment can be easily performed using a magnetic force. An object of the present invention is to provide a light-emitting element that can be used and hardly affects electrical characteristics.

  In order to solve the above-described problem, a light-emitting element having a semiconductor layer and an electrode electrically connected to the semiconductor layer, and having an insulating layer on a mounting surface side of the light-emitting element, And a magnetic region containing a magnetic material.

According to such a configuration, the light emitting element forms a magnetic pattern by the magnetization region of the insulating layer. Here, when the light emitting element is mounted on the mounting substrate with the surface having the magnetized region as the mounting surface, a magnetic pattern that matches the magnetic pattern formed by the light emitting element is formed on the mounting substrate side on which the light emitting element is mounted. The light emitting elements are aligned and placed on the mounting substrate so as to coincide with the magnetic pattern on the mounting substrate side.
In addition, since the magnetic material for forming the magnetized region is contained in the insulating layer, it is possible to make it difficult to affect the electrical characteristics of the electrodes and the like.

According to the light emitting device of the present invention, the magnetic layer is formed in the insulating layer to form the magnetic pattern. Therefore, the magnetic layer is used for alignment while reducing the influence on the electrical characteristics of the electrode. It can be done easily.
Other problems, configurations, and effects of the present invention will become apparent from the following description of embodiments.

It is a schematic diagram which shows the structure of the light-emitting device which concerns on 1st Embodiment of this invention, (a) is sectional drawing of a light-emitting device, (b) is sectional drawing of the detailed structure of a LED chip part. It is a schematic diagram explaining the magnetization area | region of the light-emitting device concerning 1st Embodiment of this invention, (a) is a top view, (b) is sectional drawing. It is a flowchart which shows the flow of the manufacturing method of the light-emitting device which concerns on 1st Embodiment of this invention. It is a flowchart which shows the flow of the manufacturing method of the light emitting element which concerns on 1st Embodiment of this invention. It is a figure for demonstrating the manufacturing process of the light emitting element which concerns on 1st Embodiment of this invention, (a) to (j) is typical sectional drawing in each process. It is a schematic diagram for demonstrating the magnetization process in the manufacturing process of the light emitting element which concerns on 1st Embodiment of this invention, (a) is a perspective view of a magnetizing apparatus, (b) shows the mode of a magnetization process. It is sectional drawing. It is a schematic diagram for demonstrating the light emitting element mounting process in the manufacturing process of the light-emitting device which concerns on 1st Embodiment of this invention, (a)-(c) is a mode that each light emitting element is mounted in a mounting substrate. Are shown in time series, with the upper part being a plan view and the lower part being a front view. It is a schematic diagram which shows the structure of the light-emitting device which concerns on the modification of 1st Embodiment of this invention, (a) is an exploded plan view of the light-emitting device which concerns on one modification, (b) is light emission which concerns on another modification. It is sectional drawing of an apparatus. It is a typical front view for demonstrating the light emitting element mounting process in the manufacturing method of the light-emitting device which concerns on 2nd Embodiment of this invention. It is typical sectional drawing which shows the structure of the light-emitting device which concerns on 3rd Embodiment of this invention. It is typical sectional drawing which shows the structure of the light emitting element which concerns on 4th Embodiment of this invention.

  Hereinafter, a light emitting device, a light emitting device in which the light emitting device is mounted on a mounting substrate, and a method for manufacturing the light emitting device will be described.

<First Embodiment>
[Configuration of light emitting device]
The structure of the light emitting device according to the first embodiment of the present invention will be described with reference to FIGS. 1A and 1B show a cross section taken along line AA in FIG. 2A.
As shown in FIGS. 1A and 2A, the light emitting device 100 according to the first embodiment of the present invention is an LED chip-sized LED package on a rectangular mounting substrate 20 in plan view. The light emitting element 10 is flip-chip mounted.
In the light emitting device 100, the entire light emitting element 10 is sealed with a light-transmitting sealing member 30. In addition, description of the sealing member 30 is abbreviate | omitted in Fig.2 (a).
Note that the shape of the mounting substrate 20 is not limited to a rectangular shape in plan view, and may be an arbitrary shape such as a circle or a polygon.

(Light emitting element)
As shown in FIG. 1A and FIG. 2A, the light emitting element 10 in the present embodiment has a substantially rectangular parallelepiped shape, and as shown in FIG. 1A and FIG. The LED chip 1 including the semiconductor light emitting element structure 3 stacked on the upper side (lower side in FIG. 1A), the n-side electrode 3n and the p-side electrode 3p of the LED chip 1, and the mounting substrate 20 are electrically connected. Bumps (external connection electrodes) 4n and 4p for connecting to the LED, the fluorescent layer 5 provided on the upper surface (substrate 2 side) of the LED chip 1 which is the light extraction surface, and the side surface (that is, the substrate) of the LED chip 1 2 and side surfaces of the semiconductor light emitting element structure 3) and a reflective layer 6 covering the lower surface (the semiconductor light emitting element structure 3 side).

  In the present embodiment, the reflective layer 6 is insulative, contains a magnetic material, and two or more predetermined regions on the mounting surface side are each magnetized in a predetermined magnetization direction. Thereby, when mounting the light emitting element 10 on the mounting board | substrate 20, it can align easily using a magnetic force. Details of mounting using the magnetization and magnetic force of the reflective layer 6 will be described later.

As shown in FIG. 1A, in the light emitting element 10, the reflective layer 6 covers the lower surface of the LED chip 1 on the semiconductor light emitting element structure 3 side and covers the side surface.
In the present embodiment, the “U-shape” is not limited to a U-shape in all cross sections, and as shown in FIG. 1A, bumps provided through the reflective layer 6 Even when a part of the reflective layer 6 is divided in a cross section including 4n and 4p, if the other cross section is “U-shaped”, the reflective layer 6 is “U-shaped” in cross-sectional view. It shall be formed. The same applies to other embodiments described later.
Moreover, although it is preferable that the reflective layer 6 coat | covers the lower surface and side surface of the light emitting element 10 like this embodiment, it is not limited to this. For example, the reflective layer 6 may be provided only on the lower surface of the light emitting element 10 so as not to cover the side surface, or the side surface may be partially covered.

  In this specification, the “semiconductor light-emitting element structure” specifically refers to an n-type semiconductor layer (first semiconductor layer) 3a and a p-type semiconductor layer (second semiconductor) as shown in FIG. Layer) 3c is a basic structure functioning as a light emitting element, including a stacked structure having an active layer 3b that emits light between them. In addition, the semiconductor light emitting element structure 3 includes an n-side electrode (electrode, first electrode) 3n electrically connected to the n-type semiconductor layer 3a and a p-type electrically connected to the p-type semiconductor layer 3c on the same surface. A structure having a side electrode (electrode, second electrode) 3p is provided.

In the present specification, in the first embodiment and other embodiments, the vertical direction is basically as shown in the drawings describing each embodiment. For example, the upper surface of the light emitting device 10 according to the embodiment shown in FIG. 1A is the upper surface of the fluorescent layer 5, and the lower surface of the light emitting device 10 is the lower surface of the reflective layer 6 and the lower surfaces of the bumps 4n and 4p.
Further, the shape in a bottom view means a shape seen from below, and the shape in a plan view means a shape seen from above.

  In the present specification, for the LED chip 1, the surface on which the semiconductor light emitting element structure 3 is formed is referred to as a front surface, and the substrate 2 side is referred to as a back surface. Similarly, for the substrate 2, the surface on which the semiconductor light emitting element structure 3 is formed is called a front surface, and the opposite surface is called a back surface. Further, in FIGS. 1A, 1B, etc., the light emitting element 10 of the present embodiment is a flip chip (hereinafter also referred to as face-down) mounting type LED package. The semiconductor light emitting element structure 3 is provided on the lower side. However, for convenience, when describing the stacked structure of the semiconductor light emitting element structure 3, the direction away from the substrate surface may be referred to as “upper”.

  Further, the light emitting element 10 according to the present embodiment uses a blue light emitting diode in which a semiconductor light emitting element structure 3 made of a nitride semiconductor is stacked on a light transmitting substrate 2 as the LED chip 1, and as the fluorescent layer 5, Using a resin layer containing a phosphor that absorbs blue light emitted from the LED chip 1 and emits yellow light, the blue light emitted from the LED chip 1 and the yellow light emitted from the fluorescent layer 5 are mixed. A white light emitting diode that outputs white light will be described as an example.

In addition, this embodiment does not limit the application range of this invention, For example, the light which LED chip 1 light-emits is not limited to blue light, By purple light, ultraviolet light, and another light color. There may be. Further, the fluorescent layer 5 is not limited to the one that converts to yellow light, and may be one that converts to red light or green light, and contains a plurality of types of phosphors that convert to red light and green light. It may be. The mixed output light is not limited to white light, and may be chromatic color light.
The light-emitting element 10 may have a configuration in which the light-emitting element 10 does not include the fluorescent layer 5 and a light-transmitting protective layer that does not contain a phosphor is disposed instead of the fluorescent layer 5.
Furthermore, the semiconductor light emitting element structure 3 is not limited to a nitride semiconductor, but may be one using other semiconductor materials.
Furthermore, the light emitting element 10 may have the n-type electrode 3n and the p-type electrode 3p on different surfaces. That is, electrodes may be provided on both the upper surface and the lower surface of the light emitting element 10.

Hereinafter, each component of the light emitting element 10 will be described in detail.
(substrate)
The substrate 2 only needs to be capable of epitaxially growing a semiconductor layer, or can support the semiconductor light emitting element structure 3, and the material, size, thickness, and the like are not particularly limited.
Specific examples of the material include sapphire (Al ₂ O ₃ ), spinel (MgA 1 ₂ O ₄ ), silicon carbide (SiC), and gallium oxide (Ga) whose main surface is the C-plane, R-plane, or A-plane. ₂ O ₃ ), ZnS, ZnO, Si, GaAs, diamond, and oxide substrates such as gallium nitride (GaN), aluminum nitride (AlN), lithium niobate, and neodymium gallate that are lattice-bonded to a nitride semiconductor are used. be able to. In addition, since the light emitting element 10 in the present embodiment is mounted face down, the back surface side (substrate 2 side) of the LED chip 1 that is the upper surface side of the light emitting element 10 is a light extraction surface. Therefore, since the light emitted from the semiconductor light emitting element structure 3 is transmitted through the substrate 2 and emitted from the light extraction surface, it is preferable that the substrate 2 has translucency at least with respect to the wavelength of the light. . Examples of such a material include sapphire and silicon carbide.

  In the present invention, the light emitting element 10 may be configured not to have the substrate 2. For example, after a semiconductor layer composed of an n-type semiconductor layer 3a, an active layer 3b, and a p-type semiconductor layer 3c is grown on the substrate 2, for example, a laser lift-off method, a metric method (MeTRe method; Mechanical Transfer using a Release layer), The substrate 2 may be peeled off from the semiconductor layer and removed by a chemical lift-off method or the like.

(Semiconductor light emitting device structure)
As shown in FIG. 1B, the semiconductor light-emitting element structure 3 includes an n-type semiconductor layer (semiconductor layer) 3a, an active layer (semiconductor layer) 3b, and a p-type semiconductor layer (for example) made of a gallium nitride-based compound semiconductor. The semiconductor layer 3c is a basic structure functioning as a light emitting element including a stacked structure in which the semiconductor layers 3c are stacked in this order. In the present embodiment, the semiconductor light emitting element structure 3 includes a full-surface electrode 3d and a cover electrode 3e stacked on a p-type semiconductor layer 3c, and is electrically connected to the n-type semiconductor layer 3a on the same plane side of the substrate 2. An LED having an n-side electrode (first electrode) 3n to be connected and a p-side electrode (second electrode) 3p on the upper surface of a cover electrode 3e electrically connected to the p-type semiconductor layer 3c is configured.

  The full-surface electrode 3d is provided on the p-type semiconductor layer 3c so as to cover substantially the entire surface of the p-type semiconductor layer 3c, and a current supplied via the p-side electrode 3p and the cover electrode 3e is supplied to the p-type semiconductor layer 3c. It is an electrode for uniformly diffusing over the entire surface of the layer 3c. Further, in the light emitting element 10 in the present embodiment that is mounted face down, the reflection layer for reflecting the light emitted from the active layer 3b to the upper surface side (the back surface side of the substrate 2) of the light emitting element 10 that is the light extraction surface. It also has the function as

  Moreover, it is preferable that the entire surface electrode 3d has a good reflectance with respect to at least the wavelength of light emitted from the active layer 3b. Therefore, as the entire surface electrode 3d, it is preferable to use a single layer film of Ag or Al having a high light reflectivity, or a multilayer film of Ni, Ti or the like having Ag as the lowermost layer (p-type semiconductor layer 3c side). it can. More preferably, an Ag / Ni / Ti / Pt multilayer film with Ag as the lowermost layer (p-type semiconductor layer 3c side) can be used, and the film thickness of each multilayer film is, for example, about 1000 nm or less. The total can be about 2 μm or less. The full-surface electrode 3d can be formed by sequentially laminating these materials, for example, by sputtering or vapor deposition.

  The cover electrode 3e covers the upper surface and side surfaces of the full-surface electrode 3d, shields the p-side electrode 3p from the full-surface electrode 3d, and functions as a barrier layer for preventing migration of the constituent material of the full-surface electrode 3d, particularly Ag.

  As the cover electrode 3e, for example, a single layer film of a metal such as Ti, Au, or W or a multilayer film of these metals can be used. Preferably, a multilayer film of Ti (lowermost layer) / Au / W / Ti with Ti as the lowermost layer (entire electrode 3d side) can be used, and the thickness of this multilayer film is, for example, 2 nm from the lower layer side. It can be set to 1700 nm, 120 nm, and 3 nm.

  In the present embodiment, the full-surface electrode 3d and the cover electrode 3e are provided only on the p-type semiconductor layer 3c. However, the full-surface electrode and the cover electrode may be provided also on the n-type semiconductor layer 3a.

  The n-side electrode 3n is electrically connected to the n-type semiconductor layer 3a, and the p-side electrode 3p is electrically connected to the p-type semiconductor layer 3c via the cover electrode 3e and the entire surface electrode 3d. It is a pad electrode for supplying a current. The n-side electrode 3 n is provided on the exposed surface of the n-type semiconductor layer 3 a of the semiconductor light emitting element structure 3. The p-side electrode 3 p is provided on the upper surface of the cover electrode 3 e of the semiconductor light emitting element structure 3. On the upper surfaces of the n-side electrode 3n and the p-side electrode 3p, bumps 4n and bumps 4p are provided as external connection electrodes, respectively.

  As the n-side electrode 3n and the p-side electrode 3p, a material having low electric resistance is preferable, and a single layer or a multilayer film of a metal such as Au, Cu, Ni, Al, or Pt, or an alloy thereof can be used. The n-side electrode 3n and the p-side electrode 3p are, for example, multilayer films having a Cu single layer or a Cu / Ni laminated film as a lower layer (n-type semiconductor layer 3a, cover electrode 3e side) and Au or an AuSn alloy as an upper layer. be able to.

  Further, in order to obtain good electrical contact between the n-side electrode 3n and the n-type semiconductor layer 3a, the lowermost layer (n-type semiconductor layer 3a side) of the n-side electrode 3n is made of Ti, Al, AlCuSi alloy or the like. Preferably, a multilayer film such as Ti / Au, Al / Ti / Au, Al / Ti / Pt / Au, Ti / Pt / Au, AlCuSi / Ti / Pt / Au can be used with the left end as the bottom layer. Further, when an AlCuSi alloy is used as the lowermost layer and a multilayer film of AlCuSi / Ti / Pt / Au is used, the thickness of each layer can be set to, for example, 500 nm, 150 nm, 50 nm, and 700 nm, respectively.

In the present invention, since an area having magnetism is provided in the insulating layer (in this embodiment, the reflective layer 6), the electrodes of the light emitting element 10 (n-side electrode 3n, p-side electrode 3p, or bumps 4n, 4p) are provided. The material can be freely selected.
In addition, since a region having magnetism can be provided without being limited by the shape of the electrode of the light-emitting element 10, the light-emitting element 10 can be easily positioned during mounting. That is, when a magnetic region is provided in an electrode, the shape of the magnetic region may be limited by the shape of the electrode. In the present invention, for example, an insulating layer is provided so as to cover the electrode, and the insulating layer By providing a magnetic region, the magnetic region suitable for positioning can be formed without being limited by the shape of the electrode.
In the case of using a light emitting element in which an electrode is provided on the surface opposite to the mounting surface and mounted mainly so as to extract light from the surface provided with the electrode (hereinafter also referred to as face-up mounting). The electrode of the light emitting element 10 is preferably made of a light-transmitting material.

(Bump (external connection electrode))
The bump (first external connection electrode) 4n and the bump (second external connection electrode) 4p are electrically connected to the n-side electrode 3n and the p-side electrode 3p, respectively, and are connected to an external circuit such as a mounting substrate. This is an external connection electrode.
The bumps 4n and 4p are disposed on the same surface side (one surface side) of the substrate 2 and pass through the reflective layer 6 so that the lower surface, which is a connection surface with an external circuit, is exposed.

  As the bumps 4n and 4p, a single layer film of Au, Cu, Ni, Ag, or an alloy containing these metals, or a multilayer film thereof can be used. Au is preferable because of its low electric resistance and contact resistance, but an AuSn alloy that is an inexpensive alloy with Sn can be used.

  In the case of a single layer structure, the bumps 4n and 4p can be formed by a wire bonder using the wire material described above. In the case of a single layer structure or a multilayer structure, it can also be formed by a plating process such as electrolytic plating or electroless plating.

  In this example, the bumps 4n and 4p are used to connect to an external circuit such as a mounting board. However, the present invention is not limited to this, and the light emitting element 10 is soldered at the time of mounting without providing bumps. You may make it join using. In the case of joining using the solder paste, the adhesive force due to the solder paste is lost at the time of joining, and the light emitting element 10 is floated without being fixed on the molten solder. Even in such a state, in the present invention, since the space between the light emitting element 10 and the wiring pattern of the mounting destination is positioned by magnetic force, the positioning can be easily performed.

(Fluorescent layer (wavelength conversion member))
The fluorescent layer 5 is provided on the upper surface side of the light emitting element 10 that is the light extraction surface, that is, the back surface side of the substrate 2, absorbs part or all of the light of the wavelength emitted by the semiconductor light emitting element structure 3, and has different wavelengths It is a wavelength conversion member comprised by the layer containing the fluorescent substance which converts into the light of this and light-emits.
The fluorescent layer 5 is formed by containing a phosphor in a light-transmitting binder such as resin, ceramic, or glass. Further, in addition to the phosphor, a diffusing material may be contained. Furthermore, the fluorescent layer 5 may have not only a single layer structure but also a multilayer structure, and may be composed of a plurality of layers each containing different types of phosphors. In addition, a layer containing a diffusing material, a layer having irregularities on the surface, and / or a translucent member such as a convex lens may be laminated on the fluorescent layer 5.

  The thickness of the fluorescent layer 5 can be determined by the phosphor content, the color tone after color mixing of the light emitted from the semiconductor light emitting element structure 3 and the light after wavelength conversion, etc. 1000 μm or less, preferably 5 μm or more and 500 μm or less, more preferably 10 μm or more and 200 μm or less.

(Phosphor)
The phosphor contained in the phosphor layer 5 is an yttrium / aluminum oxide based material activated by Ce (cerium) that can be excited by the light emitted from the LED chip 1 having a nitride semiconductor as an active layer. A phosphor-based material can be used. Specific examples of the yttrium / aluminum oxide phosphor include YAlO ₃ : Ce, Y ₃ Al ₅ O ₁₂ Y: Ce (YAG: Ce), Y ₄ Al ₂ O ₉ : Ce, and a mixture thereof. Can be mentioned. The yttrium / aluminum oxide phosphor may contain at least one of Ba, Sr, Mg, Ca, and Zn. Further, lutetium may be used instead of yttrium.

Other phosphors that can absorb blue, blue-green, and green and emit red light are sapphire (aluminum oxide) phosphors activated with Eu and / or Cr, and activated with Eu and / or Cr. And nitrogen-containing Ca—Al ₂ O ₃ —SiO ₂ phosphor (oxynitride fluorescent glass). Using these phosphors, white light can also be obtained by mixing the light from the light emitting element and the light from the phosphor.

  Further, by combining the above-described YAG phosphor activated with Ce and nitrogen-containing Ca—Al—Si—ON—oxynitride fluorescent glass activated with Eu and / or Cr, It is also possible to form a white light emitting diode having high color rendering properties by using the semiconductor light emitting element structure 3 capable of emitting light.

(Diffusion material)
The diffusing material is added to diffuse the light emitted from the LED chip 1 and the phosphor. Specifically, titanium oxide, silicon oxide, hollow silicon oxide, aluminum oxide, potassium titanate, zinc oxide, and boron nitride can be used. Also, resin powder such as silicone powder may be used. The average particle diameter of the diffusing material can be, for example, 0.001 μm or more and 100 μm or less, and preferably 0.005 μm or more and 50 μm or less.

(Binder (resin))
The binder is a resin for binding the above-described phosphor or diffusing material to the light extraction surface of the LED chip 1 as the fluorescent layer 5. As the resin serving as the binder, a thermosetting resin is preferable. For example, dimethyl silicone resin, phenyl silicone resin, dimethyl / phenyl hybrid silicone resin, epoxy / silicone hybrid resin, fluorine resin, adamantane resin, alicyclic epoxy resin, hybrid epoxy resin, urethane resin, etc. may be used. it can. In particular, silicone resin and fluororesin having high heat resistance, light resistance, and high transmittance are preferable. Further, a glass component may be added to the binder in order to increase the hardness. Moreover, in order to improve adhesiveness with LED chip 1, you may add an adhesive imparting agent. As an adhesion imparting agent, for example, a silane coupling agent, a titanate coupling agent, an aluminum coupling agent, or the like can be used.

Although the light emitting element 10 according to the present embodiment is configured to include the phosphor 5, the present invention is not limited thereto, and may be configured without the phosphor layer 5. In addition, when the fluorescent layer 5 is provided, the phosphor is not limited to the one in which the phosphor is fixed with a binder such as a resin, but the phosphor particles may be ALD (Atomic Layer Deposition) method or MOCVD (Metal Organic Chemical Vapor Deposition). For example, a coating such as SiO ₂ or Al ₂ O ₃ is formed by a metal chemical vapor deposition (PECVD) method, a plasma enhanced chemical vapor deposition (PECVD) method, an atmospheric pressure plasma deposition method, etc. The body particles may be fixed to the light emitting element 10.

(Reflective layer (insulating layer))
The reflective layer 6 is an insulating layer and is a member having a function of reflecting the light emitted from the LED chip 1 and traveling in the lateral direction or the downward direction to the fluorescent layer 5 side that is a light extraction surface.
In the present embodiment, the reflective layer 6 is a resin layer containing a reflective material that covers the lower surface (the semiconductor light emitting element structure 3 side) of the LED chip 1 and covers the side surface, and includes a binder and In addition to the light reflecting material, the resulting resin may contain a filler.

Further, in the present embodiment, the reflective layer 6 contains a magnetic material having a high coercive force, and at least two predetermined regions of the lower surface side layer that is the mounting surface of the light emitting element 10 each have a predetermined magnetization direction. A magnetized magnetization region is formed.
Thus, the manufacturing process of the light emitting element 10 can be simplified by making the reflective layer 6 an insulating layer having both a light reflection function and a magnetization region forming function. Further, the insulating layer that forms the magnetized region is not limited to the reflective layer 6 as in the present embodiment. For example, a magnetized region may be formed in an insulating protective layer made of SiO ₂ or SiN.
Details of the magnetization region will be described later.

  Since the reflective layer 6 is provided with the light extraction surface of the semiconductor light emitting element structure 3 exposed, the light emitted from the LED chip 1 passes through the fluorescent layer 5 provided on the light extraction surface and is extracted to the outside. . At this time, a part of the light passing through the fluorescent layer 5 is converted into long-wavelength light by the phosphor contained in the fluorescent layer 5 and extracted outside, and the other light is emitted from the semiconductor light emitting element structure. 3 emits light of the same wavelength and passes through the fluorescent layer 5 and is extracted outside. Then, light (white light) in which light (for example, yellow light) extracted after wavelength conversion by the phosphor and light (for example, blue light) extracted without wavelength conversion is mixed from the light emitting element 10. Is output.

  The thickness of the reflective layer 6 is preferably sufficient to reflect the light emitted by the LED chip 1. The thickness of the reflective layer 6 formed on the surface of the LED chip 1 (semiconductor light-emitting element structure 3 side) can be, for example, 1 μm or more and 500 μm or less, and preferably 5 μm or more and 200 μm or less. More preferably, it is 10 μm or more and 100 μm or less. Further, the thickness of the reflective layer 6 on the side surface of the semiconductor light emitting element structure 3 can be, for example, 1 μm or more and 2000 μm or less, preferably 5 μm or more and 1000 μm or less, and 10 μm or more and 500 μm or less. More preferably.

  In particular, it is preferable to adjust the addition amount of the light reflecting material in consideration of a certain degree of variation in the thickness of the reflective layer 6 on the side surface side of the LED chip 1. That is, when the thickness of the reflective layer 6 is the smallest within the range of the variation, the reflectance of the reflective layer 6 determined by the thickness, the amount of added light reflecting material, and the like is the light incident on the reflective layer 6. It is preferable to form the reflective layer 6 by adjusting the amount of addition of the light reflecting material described above so that the reflectance is such that substantially all of the light is reflected.

(binder)
The binder is a material for binding the light reflecting material, the filler, and the magnetic material to the side surface and the surface (semiconductor light emitting element structure 3 side) of the LED chip 1 as the reflective layer 6. As the binder, the same binder as that used for the fluorescent layer 5 can be used.

(Light reflecting material)
The light reflecting material is a member that reflects the light emitted from the LED chip 1. As the light reflecting material, the same diffusing material used for the fluorescent layer 5 described above can be used.
In addition, the reflective film may be formed by depositing the light reflecting material without being mixed with the binder, for example, by electrophoretic deposition.

(Magnetic material)
As the magnetic material, a material having a Curie temperature sufficiently higher than room temperature or a temperature required for mounting the light emitting element 10 is used. For example, ferrite (iron oxide), neodymium iron boron (Nd, Fe, B), samarium cobalt (Sm, Co), alnico (Al, Ni, Co), samarium iron nitrogen (Sm, Fe, N), γ-Fe ₂ O ₃ , CrO ₂ , Co—Ni thin film, Co or Nb-doped TiO ₂ , erbium-doped barium titanate (Er: BaTiO ₃ ), Cr-doped ZnTe, and the like. Hard magnetic materials (ferrite (iron oxide), neodymium iron boron (Nd, Fe, B), samarium cobalt (Sm, Co), alnico (Al, Ni, Co), samarium iron nitrogen (magnetic materials having high coercive force) Sm, Fe, N), etc.) and γ-Fe ₂ O ₃ , CrO ₂ , Co—Ni thin films and the like used as magnetic recording materials are preferably used.

Also, Co-doped titanium dioxide, Fe-doped titanium dioxide, (Co, Nb) -doped titanium dioxide, Tb ₂ O ₃ —B ₂ O ₃ —Ga ₂ O ₃ —SiO ₂ glass, EuO—Al ₂ O ₃ —SiO ₂ glass , Rare earth iron garnet, TSLAG (Tb ₃ (Sc, Lu) ₂ Al ₃ O ₁₂ ) crystal, TGG (Tb ₃ Ga ₅ O ₁₂ ) crystal, (Er, Sr) BaTiO ₃ crystal, TAG (Tb ₃ Al ₅ O ₁₂₎ ) Crystal, Zn _(1-x) Mn _x Te, Zn _(1-x) Mn _x Se, Cd _(1-x) Mn _x Te, (Co, V, Mn) doped ZnO, (Co, V, Mn) doped GaN, (Co, V, Mn ) doped AlN, GaMnAs, InMnAs, chalcopyrite (Cd, Mn) GeP _2, Toru having magnetism, such as sphalerite CrAs It can also be used sexual dielectric. It is preferable to use a magnetic body having translucency because absorption of light by the magnetic body can be suppressed.
In the composition formula, 0 ≦ x ≦ 1.

The average particle size of the powder is not particularly limited, but is preferably smaller than the thickness of the reflective layer 6 and about 5 nm to 50 μm.
In the present embodiment, since the magnetic material is contained in the reflective layer 6 that is an insulating layer, not an electrode, it is sufficient to exhibit a large magnetic force while reducing the influence on the electrical characteristics of the light-emitting element 10. An appropriate amount of magnetic substance can be contained.

  In addition, the magnetic body may be included on the mounting surface and on the lower surface side of the reflective layer 6 where the magnetized region is formed, and may be configured not to be included on the side surface side. Furthermore, you may contain in the lower surface of the reflection layer 6 so that a magnetic body may be unevenly distributed to the mounting surface side. Thereby, light absorption by the magnetic material can be suppressed. Moreover, a strong magnetic force can be obtained with a small amount of magnetic material.

  The magnetized regions 6n and 6p provided in the light emitting element 10 are preferably provided so as to be in contact with magnetized regions 23n and 23p provided on the mounting substrate 20 side to be described later. Accordingly, a stronger magnetic force can be applied between the magnetized regions 6n and 6p on the light emitting element 10 side and the magnetized regions 23n and 23p on the mounting substrate 20 side, so that the positioning of the light emitting element 10 is facilitated. In addition, the magnetized regions 6n and 6p provided in the light emitting element 10 and the surfaces of the electrodes 3n and 3p or the bumps 4n and 4p mounted on the mounting substrate 20 are preferably on the same plane. Thereby, mounting of the light emitting element 10 can be facilitated while exerting a strong magnetic force.

(Filler)
The filler is added to increase the strength of the reflective layer 6 that is a resin layer. In addition, by adding a filler, the heat conductivity of the reflective layer 6 can be raised and heat dissipation can be improved. As the filler, glass fiber, whisker, aluminum oxide, silicon oxide, boron nitride, zinc oxide, aluminum nitride, or the like can be used.

(Mounting board)
As shown in FIGS. 1A and 2A, the mounting substrate 20 includes a support substrate 21 and element mounting portions 22 n and 22 p disposed on the upper surface of the support substrate 21. Yes.
The support substrate 21 can be made of an insulating material such as glass, ceramics, resin such as epoxy resin or polyimide, or a composite material coated with an insulating film using a metal material such as copper or aluminum as a base material. Alternatively, a composite material in which an insulating material such as a resin is used as a base material and a metal film is provided on the back surface side can be used.
The shape of the mounting substrate 20 is not particularly limited, and may be a thick and hard substrate or a thin and flexible substrate.

The element mounting portion (first wiring pattern) 22n and the element mounting portion (second wiring pattern) 22p are part of the wiring pattern and are portions for mounting the light emitting element 10. In the present embodiment, the element mounting portions 22n and 22p contain a magnetic material, and are aligned with the magnetization regions 6n and 6p of the reflective layer 6 of the light emitting element 10 so that the magnetic attraction acts so as to act. , 22p are respectively magnetized in a predetermined magnetization direction to form magnetized regions 23n, 23p, respectively.
Details of the magnetized regions 23n and 23p will be described later.

Further, the mounting substrate 20 is provided with an electrode terminal (not shown) for connecting to an external power source and a wiring pattern (not shown) for electrically connecting the electrode terminal and the element mounting portions 22n and 22p. It has been.
The wiring pattern including the element mounting portions 22n and 22p can be formed using a conductive material such as metal, and it is preferable to use a good electrical conductor such as copper, aluminum, or gold.
The magnetic material contained in the element mounting portions 22n and 22p is not particularly limited, but the same magnetic material as that contained in the reflective layer 6 can be used.

  Furthermore, the lower layer of the element mounting portions 22n and 22p may be formed using a magnetic material, and the upper layer that is electrically connected to the bumps 4n and 4p may be formed using the above-described good electrical conductor. In the case of a multilayer structure, the layer containing the magnetic material can be formed by, for example, solidifying the magnetic material powder with a resin as in the case of the reflective layer 6 described above. By separating the layer containing the magnetic material from the layer for the original electrical wiring, it is possible to prevent the electrical characteristics of the wiring pattern from being deteriorated. In addition, a sufficient amount of magnetic material can be contained in the lower layer so that a large magnetic force can be exhibited while reducing the influence on the electrical characteristics of the wiring pattern.

(Sealing member)
The sealing member 30 is a translucent resin layer that seals the upper surface of the mounting substrate 20 and the light emitting element 10 mounted on the mounting substrate 20. As a material of the sealing member 30, the same resin as that used as the binder of the fluorescent layer 5 described above can be used.
Further, instead of the fluorescent layer 5 or in addition to the fluorescent layer 5, a phosphor may be contained in the sealing member 30.

(Magnetized region)
Next, with reference to FIG. 2A and FIG. 2B, the magnetization region of the reflective layer 6 of the light emitting element 10 and the element mounting portions 22n and 22p of the mounting substrate 20 will be described. Here, FIG.2 (b) is sectional drawing in the AA line of Fig.2 (a). Further, in FIG. 2B, hatching of cross sections of members other than the magnetized regions 6n, 6p, 23n, and 23p is omitted.
In FIGS. 2A and 2B, it is shown that the shaded region in one of the two shades of color is a magnetized region. In this example, the magnetization direction is perpendicular to the film surface of the reflective layer 6 or the element mounting portions 22n and 22p.

In FIG. 2, the dark shaded area indicates the N pole, and the light shaded area indicates the S pole. That is, in FIG. 2 (a), the dark shaded area has an N pole on the upper surface and is not shown, but its lower face is the S pole, and the light shaded area has an S pole on the upper face. , Indicating that the bottom surface is an N pole.
Further, in FIG. 2B, in each layer of the magnetized region, a region where the upper half is darkly shaded and the lower half is lightly shaded indicates that the upper surface is an N pole and the lower surface is an S pole. A region where light shading is applied to the half and dark shading is applied to the lower half indicates that the upper surface is the S pole and the lower surface is the N pole.

  In the present embodiment, the reflective layer 6 contains a magnetic material, and a predetermined region on the bottom surface side of the reflective layer 6 that is the mounting surface of the light emitting element 10 is magnetized in a predetermined magnetization direction to form a magnetic pattern, When the light emitting element 10 is mounted on the mounting substrate 20 by matching with the magnetic pattern formed by the magnetization regions of the element mounting portions 22n and 22p, which are wiring patterns disposed on the upper surface of the mounting substrate 20, The alignment between the light emitting element 10 and the mounting substrate 20 is performed automatically (self-alignment).

As shown in FIG. 2A and FIG. 2B, the bump 4n connected to the n-side electrode 3n (see FIG. 1B) is surrounded in the bottom layer of the reflective layer 6 of the light emitting element 10. The magnetized region (first magnetized region) 6n is magnetized perpendicularly to the film surface so that the upper surface side is the S pole (the lower surface side is the N pole). Further, the magnetized region (second magnetized region) 6p surrounding the bump 4p connected to the p-side electrode 3p (see FIG. 1B) is on the film surface so that the upper surface side is the N pole (the lower surface side is the S pole). Magnetized vertically. The magnetized region 6n and the magnetized region 6p are respectively assigned to the left half and the right half of the region obtained by dividing the light emitting element 10 by the center line in plan view.
As described above, the light emitting element 10 is mounted on the mounting substrate 20 by dividing substantially the entire bottom surface, which is the mounting surface of the light emitting element 10, into the magnetized regions 6n and 6p and equally dividing the magnetized region 6n and the magnetized region 6p. At this time, it is preferable because the magnetic force that effectively acts for alignment is increased.

When the shape of the light emitting element 10 in a plan view is a rectangle having a longitudinal direction and a short direction, a magnetized region 6n is provided at one end (side) in the longitudinal direction, and the other end (side). It is preferable to provide a magnetized region 6p. Here, the provision of the magnetized regions 6n and 6p at the end is not limited to the end and the vicinity thereof, but from the end to the vicinity of the other magnetized region as in the example shown in FIG. Provision is also included. By providing at least the two magnetized regions 6n and 6p as far as possible from each other, the region in which the magnetized pattern is formed becomes wider, so that the alignment accuracy using the magnetic pattern can be increased.
In addition to providing the magnetized regions 6n and 6p in the vicinity of the opposing sides as described above on the rectangular mounting surface in plan view, the magnetized regions 6n and 6p are respectively provided at opposite ends (corner portions) on the diagonal line. May be provided.

  Furthermore, by providing the magnetized region 6n and the magnetized region 6p so as to surround the bump 4n and the bump 4p, respectively, in a plan view, the positions of the bumps 4n and 4p using the magnetic pattern formed by the magnetized regions 6n and 6p. It is preferable because the alignment can be performed with high accuracy.

  On the other hand, the entire element mounting portion 22n of the mounting substrate 20 is magnetized perpendicularly to the film surface so that the upper surface side is the S pole, thereby forming a magnetization region (third magnetization region) 23n. Further, the entire element mounting portion 22p is magnetized perpendicularly to the film surface so that the upper surface side is the N pole, thereby forming a magnetized region (fourth magnetized region) 23p.

With this configuration, when the light emitting element 10 is placed on the mounting substrate 20, areas where magnetic attraction acts between the lower surface of the opposing light emitting element 10 and the upper surface of the mounting substrate 20, that is, magnetization The light emitting element 10 is mounted on the mounting substrate 20 so that the set of the region 6n and the magnetized region 23n and the set of the magnetized region 6p and the magnetized region 23p are in contact with each other. As a result, the bump 4n surrounded by the magnetized region 6n and the element mounting portion 22n are in contact with each other, and the bump 4p surrounded by the magnetized region 6p and the element mounting portion 22p are in contact with each other. 20.
Details of alignment using magnetic force will be described in the manufacturing method described later.

  In addition, the shape of the light emitting element 10, the mounting board | substrate 20, and each member which comprises these is not limited to what was shown in FIG. 1, It can be set as arbitrary shapes. Further, the positional relationship between the bumps 4n, 4p of the light emitting element 10 and the magnetized regions 6n, 6p and the positional relationship between the magnetized regions 6n, 6p and the magnetized regions 23n, 23p are limited to the example shown in FIG. is not. The magnetized regions 6n and 6p are not limited to the same shape, and are not limited to be formed so as to surround the bumps 4n and 4p, respectively. The magnetic region 6n so that the magnetic pattern on the light emitting element 10 side matches the magnetic pattern on the mounting substrate 20 side, and the bump 4n and the element mounting portion 22n and the bump 4p and the element mounting portion 22p are favorably bonded. , 6p, 23n, and 23p may be formed.

[Operation of light emitting device]
When the light emitting device 100 according to the first embodiment of the present invention shown in FIG. 1 is supplied with electric power from an external power supply (not shown) through an electrode terminal (not shown) for power supply provided on the mounting substrate 20. A current flows through the path of the element mounting portion 22p, the bump 4p, the LED chip 1, the bump 4n, and the element mounting portion 22n. When an electric current flows through the LED chip 1, the LED chip 1 emits blue light. The blue light emitted from the LED chip 1 is reflected directly or by the reflective layer 6, the n-side electrode 3n, the p-side electrode 3p, the full-surface electrode 3d, etc., and the substrate 2 side (upward direction in FIG. 1A). Is taken out through the fluorescent layer 5. At this time, a part of the blue light passing through the fluorescent layer 5 is absorbed by the phosphor contained in the fluorescent layer 5, converted into yellow light having a long wavelength, and extracted. As a result, the light emitting element 10 outputs white light in which blue light passing through the fluorescent layer 5 without wavelength conversion and yellow light wavelength-converted by the fluorescent layer 5 are mixed. The light emitting device 100 outputs the white light output from the light emitting element 10 through the translucent sealing member 30.

[Method for Manufacturing Light Emitting Device]
A method of manufacturing the light emitting device according to the first embodiment of the present invention will be described with reference to FIG.
As shown in FIG. 3, in the method for manufacturing the light emitting device 100 according to the first embodiment, the light emitting element manufacturing step S10, the light emitting element mounting step S11, the electrode bonding step S12, and the sealing step S13 are sequentially performed. Done.

(Light emitting element manufacturing process: S10)
First, in the light emitting element manufacturing step S10, the light emitting element 10 is manufactured.
Here, the light emitting element manufacturing step S10 for manufacturing the light emitting element 10 will be described in detail with reference to FIGS. 4 to 6 (refer to FIGS. 1 and 2 as appropriate).

  In the light emitting element manufacturing process S10, as shown in FIG. 4, the semiconductor light emitting element structure forming process S100, which is a sub process, a bump forming process S101, a first singulation process S102, a chip sorting process S103, First carrier sticking step S104, reflective layer forming step S105, reflective layer thickness adjusting step S106, cleaning step S107, second carrier sticking step S108, fluorescent layer forming step S109, and fluorescent layer thickness adjusting Step S110, second singulation step S111, and magnetization step S112 are sequentially performed.

Next, referring to FIG. 5 (refer to FIGS. 1, 2 and 4 as appropriate), each step will be specifically described.
In this embodiment, the LED chip 1 in a wafer state in which the light emitting element 10 is formed by arranging the semiconductor light emitting element structures 3 in which the nitride semiconductors are stacked on the substrate 2 is arranged in a matrix form is a known method. The description will be simplified as what is to be manufactured, and a process subsequent to the manufacturing process of the LED chip 1 in a wafer state that has not been formed into chips will be described with reference to the drawings.

(Semiconductor light emitting element structure forming step: S100)
The semiconductor light emitting element structure forming step S100 for forming the semiconductor light emitting element structure 3 on the substrate 2 will be described in a simplified manner.
First, an n-type semiconductor layer 3a, an active layer 3b, and a p-type semiconductor made of a compound semiconductor such as gallium nitride are formed on a substrate 2 made of sapphire or the like by using the MOVPE method (metal organic vapor phase epitaxy). Each semiconductor layer constituting the layer 3c is grown.

  Next, in order to form the n-side electrode 3n, a part of the n-type semiconductor layer 3a is exposed. A mask having a predetermined shape is formed on the wafer with a photoresist, and the p-type semiconductor layer 3c, the active layer 3b, and a part of the n-type semiconductor layer 3a are removed by RIE (reactive ion etching). The n-type semiconductor layer 3a is exposed. After the etching, the resist is removed.

Next, as a full-surface electrode 3d, for example, a multilayer film in which Ag / Ni / Ti / Pt is sequentially laminated is formed on the entire surface of the wafer by sputtering. Then, an entire surface electrode 3d having a predetermined shape is formed by photolithography. Thereafter, as the cover electrode 3e, for example, a multilayer film formed by sequentially stacking Ti / Au / W / Ti is formed by sputtering. Then, a cover electrode 3e having a predetermined shape that shields the entire surface electrode 3d is formed by photolithography.
Further, the n-side electrode 3n is formed by a similar method.
As described above, the LED chip 1 in the wafer state in which the semiconductor light emitting element structure 3 is formed on the substrate 2 is obtained.

Further, the entire surface of the semiconductor light emitting element structure 3, for example, by sputtering, may be laminated like insulating SiO ₂ as the protective layer.

(Bump forming step (external connection electrode forming step): S101)
Next, in the bump forming step S101, bumps 4n and 4p are formed on the upper surface of the semiconductor light emitting element structure 3, as shown in FIG. In the following description of the manufacturing method, the bumps 4n and 4p are collectively referred to as the bump 4 as appropriate. As the bumps 4, bumps 4 n and bumps 4 p are formed on the n-side electrode 3 n and the p-side electrode 3 p (see FIG. 1B), respectively.

  The bump 4 can be formed on the n-side electrode 3n and the p-side electrode 3p (see FIG. 1B) using a wire bonder. For example, a wire (bonding wire) such as Au (gold) is connected to the semiconductor light emitting element structure 3 (the n-side electrode 3n or the p-side electrode 3p (see FIG. 1B)) using a wire bonder, A spherical metal lump formed at the end of the bonding wire connected on the semiconductor light emitting element structure 3 can be used as the bump 4.

  The method for forming the bumps 4 is not limited to this. For example, a mask pattern having an opening in the bump formation region can be formed using a photoresist, and metal bumps can be formed by electrolytic plating or electroless plating. .

(First piece separation step: S102)
Next, in the first singulation step S102, as shown in FIG. 5B, the wafer-state LED chip 1 on which the bumps 4 are formed is pasted on a dicing sheet (not shown), and the boundary of the element structure is obtained by dicing. Cut along the line 12 and cut into chips 11.

(Chip selection process: S103)
Next, in the chip selection step S103, bumps formed on the n-side electrode 3n and the p-side electrode 3p (see FIG. 1B) of the semiconductor light emitting element structure 3 for each chip 11 separated into individual pieces. A power supply device is connected to 4 to cause the chip 11 to emit light, and the emission wavelength is measured. Then, the chips 11 whose emission wavelengths are in a predetermined range are selected.

(First carrier pasting step (array step): S104)
Next, in the first carrier sticking step S104, the chips 11 sorted in the chip sorting step S103 are arranged on the carrier 40 to which the adhesive sheet 41 is stuck at a predetermined interval with the bumps 4 facing upward. The chips 11 arranged on the carrier 40 are affixed to the carrier 40 by the adhesive sheet 41 and the position thereof is maintained.

  In the first carrier attaching step S104, for example, the chips 11 can be adsorbed one by one using a collet (not shown) and arranged on the carrier 40. At this time, the gap between the chips 11 is allowed to vary to some extent.

  Here, the carrier (flat jig) 40 is a plate-like jig that holds the arrangement of the chips 11. The carrier 40 can be a plate-shaped member such as ceramic, glass, metal, or plastic having rigidity.

(Reflective layer forming step (reflective member forming step): S105)
Next, in the reflective layer forming step S105, as shown in FIG. 5D, the reflective layer 6 is formed on the surface (semiconductor light emitting element structure 3 side) and side surfaces of the chip 11 attached to the carrier 40. Specifically, the carrier 40 is placed on the lower mold 50, a resin containing a light reflecting material is applied on the surface on which the chips 11 are arranged, and is sandwiched by the upper mold 51. And it heats and hardens (primary hardening) until the intensity | strength which can be released from the upper metal mold | die 51 is obtained. Thereafter, the carrier 40 is taken out from the upper and lower molds 50 and 51 and put into an oven to sufficiently cure (secondary curing) the resin of the reflective layer 6.

  In the example described above, the resin is applied onto the chip 11 and then the upper mold 51 is lowered and compression molded. However, the molding method is not limited to this. For example, the upper and lower molds 50 and 51 may be installed at predetermined positions, and transfer molding in which resin is injected from the gap between the upper and lower molds 50 and 51 may be performed.

(Reflection layer thickness adjustment step: S106)
Next, in the reflective layer thickness adjusting step S106, as shown in FIG. 5E, the surface of the reflective layer 6 (upper surface in FIG. 5E) is polished (or ground) by using a polishing machine 60. Then, the bump 4 is exposed and polished (or ground) to a predetermined polishing line 61 to adjust the reflective layer 6 to a predetermined thickness. In this way, the surface of the reflective layer 6 on which the magnetized regions 6n and 6p are formed and the surface of the bump 4 bonded to the mounting substrate 20 described later can be on the same plane. Accordingly, it is possible to easily mount the light emitting element 10 while exerting a strong magnetic force.

(Cleaning step: S107)
Next, in the cleaning step S107, as shown in FIG. 5F, the chip 11 integrated with the reflective layer 6 is peeled off from the carrier 40, and burrs, dust, and the like generated by polishing are removed.

  As a cleaning method, a water jet can be used. As other cleaning methods, for example, plasma irradiation, laser irradiation, blasting, or the like can be used.

(Second carrier pasting step: S108)
Next, in 2nd carrier sticking process S108, as shown in FIG.5 (g), the adhesive sheet 43 was affixed so that the board | substrate 2 might become an upper side, as shown in FIG.5 (g). Affixed to the carrier 42. In addition, the carrier 42 and the adhesive sheet 43 used at this process can use the thing similar to the carrier 40 and the adhesive sheet 41 used at 1st carrier sticking process S104.

(Fluorescent layer forming step: S109)
Next, in the fluorescent layer forming step S109, as shown in FIG. 5H, the fluorescent layer 5 is formed on the surface of the chip 11 on the substrate 2 side. Specifically, the carrier 42 can be placed on the lower mold 52, a resin containing a phosphor is applied on the back surface of the chip 11, and sandwiched by the upper mold 53 to be released from the upper mold 53. It is heated and cured (primary curing) until strength is obtained. Thereafter, the carrier 42 is taken out from the upper and lower molds 52 and 53 and put into an oven to sufficiently cure (secondary curing) the resin of the fluorescent layer 5.

  In addition, this process is not limited to compression molding similarly to the above-described reflective layer forming process S105, and other molding methods such as transfer molding may be used.

(Fluorescent layer thickness adjustment step: S110)
Next, in the fluorescent layer thickness adjusting step S110, as shown in FIG. 5I, the upper surface of the fluorescent layer 5 is polished (or ground) to a predetermined polishing line 62 by using a polishing machine 60. Then, the fluorescent layer 5 is adjusted to a predetermined thickness. Thereby, the color tone of the luminescent color of the light emitting element 10 can be adjusted.

(Second piece separation step: S111)
Next, in the second singulation step S111, as shown in FIG. 5 (j), the light emitting element 10 integrated by the reflective layer 6 and the fluorescent layer 5 is attached to a dicing sheet (not shown), and dicing is performed. Is cut along the boundary line 13 of the light emitting element 10 to be separated into individual pieces.

(Magnetization process: S112)
Finally, in the magnetizing step S112, a magnetic field is applied to the reflective layer 6 on the bottom surface side of the light emitting element 10 using a magnetizing device, and a predetermined region is magnetized in a predetermined magnetization direction so that the magnetized regions 6n and 6p are formed. Form. Thereby, the light emitting element 10 shown in FIG. 1 is completed.

Here, an example of a magnetizing apparatus will be described with reference to FIG.
The magnetizing device 70 shown in FIG. 6A includes a yoke 71, a magnetizing power source 73, and an electric wire 74 that connects them. The yoke 71 is bifurcated to have a core 71n and a core 71p, and a coil 72n and a coil 72p are wound around the core 71n and the core 71p in opposite directions, respectively.

In this example, the coil 72n and the coil 72p are connected in series, and the coil 72n side is connected to the positive electrode of the power source 73, and the coil 72p side is connected to the negative electrode of the power source 73 so that a current flows. As a result, an upward magnetic field with N poles is generated and a downward magnetic field with the upper surface of the core 71p being S poles is generated.
The shapes of the upper surfaces of the core 71n and the core 71p coincide with the shapes of the magnetization region 6n and the magnetization region 6p of the light emitting element 10, respectively.

As shown in FIG. 6B, the upper surface of the core 71n and the upper surface of the core 71p of the magnetizing device 70 are brought into contact with or close to the bottom surface of the reflective layer 6 that becomes the magnetized region 6n and the magnetized region 6p of the light emitting element 10, respectively. By generating a magnetic field as described above, the magnetized region 6n is magnetized upward in the vertical direction, and the magnetized region 6p is magnetized downward in the vertical direction.
The magnetizing device is not limited to one using a bifurcated yoke, and may be one using a plurality of electromagnets or permanent magnets that are independent for each magnetizing coil or magnetized region.

Returning to FIG. 3, the description of the method for manufacturing the light emitting device 100 will be continued.
(Light emitting element mounting step: S11)
As described above, the light emitting element 10 manufactured in the light emitting element manufacturing process S10 is placed on the element mounting portions 22n and 22p of the mounting substrate 20 so that the polarities of the electrodes are matched in the light emitting element mounting process S11. The

  Here, the mounting substrate 20 is manufactured in advance or in parallel with the light emitting element manufacturing step S10. The mounting substrate 20 is manufactured, for example, by forming a wiring pattern on a support substrate 21 such as a resin using a conductive material such as a metal. At this time, the element mounting portions 22n and 22p in the wiring pattern are formed of a material containing a magnetic material. Then, magnetized regions 23n and 23p are formed by magnetizing predetermined regions of the element mounting portions 22n and 22p, for example, in the same manner as the magnetization step S112 (see FIG. 4) of the light emitting element 10 described above. be able to.

Next, with reference to FIG. 7, a state in which the light emitting element 10 is placed on the mounting substrate 20 while performing alignment using magnetic force will be described.
In addition, in the top view shown in the upper part of each figure of (a)-(c) of FIG. 7, dark shading is given, and in the front view shown in the lower part, dark shading is given to the upper half, and the lower half is given. The lightly shaded magnetized regions 6n and 23n are magnetized in the direction perpendicular to the film surface so that the upper surface side is an N pole and the lower surface side is an S pole. Further, in the plan view shown in the upper part of each of FIGS. 7A to 7C, light shading is applied, in the front view shown in the lower part, the upper half is lightly shaded, and the lower half is dark. The magnetized regions 6p and 23p subjected to the multiplication indicate that they are magnetized in a direction perpendicular to the film surface so that the upper surface side is an N pole and the lower surface side is an S pole.

First, as illustrated in FIG. 7A, the light emitting element 10 is adsorbed on the upper surface by the collet 80 and is conveyed toward the mounting substrate 20 while being held by the collet 80. At this time, the collet 80 is moved in the horizontal direction from the upper side to the lower side in the upper plan view by the moving mechanism (not shown), and is moved in the vertical direction from the upper side to the lower side in the lower front view.
In the light emitting element 10, the magnetization region 6 n and the bump 4 n are on the right side, the magnetization region 6 p and the bump 4 p are on the left side, and on the mounting substrate 20, the magnetization region 23 n (element mounting portion 22 n) is on the left side. Part 22p) is on the right. That is, in the stage of FIG. 7A, the polarity of the electrode of the light emitting element 10 and the polarity of the electrode of the mounting substrate 20 are opposite to each other.

  Here, the collet (conveying means) 80 includes a shaft portion 81, a suction portion 82, and a joint 83. The shaft portion 81 has a hollow structure and is configured so that the light emitting element 10 can be sucked and held by the suction portion 82 at the tip end by being sucked by a suction device (not shown). Further, a joint 83 is provided in the middle of the shaft portion 81, and the suction portion 82 side, which is the tip side of the joint 83, is configured to be rotatable around the shaft.

  In addition, the shaft portion 81 preferably has flexibility so as to be bent by a magnetic force acting between the magnetization regions 6 n and 6 p of the light emitting element 10 and the magnetization regions 23 n and 23 p of the mounting substrate 20. With this configuration, when the light emitting element 10 is placed on the mounting substrate 20, the position where the light emitting element 10 is transported is shifted in the mounting surface with respect to a predetermined position on the mounting substrate 20. Even if there is, there is a self-adjustment (self-alignment) so that the place where the light emitting element 10 is placed becomes a predetermined position by the magnetic force acting between the magnetized regions.

  In addition to the method described above, a method of self-adjusting the mounting position by floating the light emitting element in the droplet can also be used. More specifically, droplets raised in a convex shape due to surface tension are formed on the mounting substrate 20 so as to enclose the magnetized regions 23n and 23p, and the light emitting element 10 is utilized using buoyancy and surface tension. Float on the droplet surface. While the droplets are evaporated, the light emitting element 10 is moved to a predetermined mounting position by the magnetic force acting between the magnetized regions of the light emitting element 10 and the mounting substrate 20 and is self-adjusted (self-alignment).

Next, as shown in FIG. 7B, when the light emitting element 10 further approaches the upper surface of the mounting substrate 20, the lower surface of the magnetized region 6p and the upper surface of the magnetized region 23n facing each other are the same polarity (N Since the lower surface of the magnetized region 6n and the upper surface of the magnetized region 23p have the same polarity (S pole), a magnetic repulsive force acts between these opposing magnetized regions. For this reason, the light emitting element 10 rotates around the axis of the shaft portion 81 of the collet 80 by these magnetic repulsive forces.
Then, as shown in FIG. 7C, the magnetized region 6n and the magnetized region 23n face each other, the magnetized region 6p and the magnetized region 23p face each other, and a magnetic attractive force acts between the facing surfaces. The light emitting element 10 and the mounting substrate 20 are aligned.

As described above, the light emitting element 10 is mounted on the mounting substrate 20 so that the magnetic pattern formed by the magnetization regions 6n and 6p of the light emitting element 10 and the magnetic pattern formed by the magnetization regions 23n and 23p of the mounting substrate 20 coincide. Placed on. As a result, the bumps 4n and 4p which are external connection electrodes of the light emitting element 10 and the element mounting portions 22n and 22p which are element connection electrodes in the wiring pattern of the mounting substrate 20 are aligned so as to have the correct polarity. Is done.
At this time, in addition to the alignment of the polarity direction of the electrodes, in addition to the rotation of the shaft portion 81 of the collet 80, preferably in addition to the rotational property, in FIG. Can also be done.

  7A, the magnetization region 6n of the light emitting element 10 is on the left side and the magnetization region 6p is on the right side, and the orientation of the electrodes of the magnetic pattern of the light emitting element 10 and the magnetic pattern of the mounting substrate 20 is matched. In the case where the light emitting element 10 shown in FIGS. 7B and 7C approaches the mounting substrate 20, the light emitting element 10 is placed on the mounting substrate 20 without rotating. .

  Further, as shown in FIG. 7C, when the light emitting element 10 is placed on the mounting substrate 20, the suction of the light emitting element 10 by the collet 80 is stopped by stopping the suction by the suction device (not shown). Then, a moving mechanism (not shown) is driven to separate the collet 80 from the light emitting element 10. At this time, the light emitting element 10 is in a state of being attracted to the mounting substrate 20 by magnetic attraction.

Returning to FIG. 3, the description of the method for manufacturing the light emitting device will be continued.
(Electrode bonding step: S12)
When the light emitting element 10 is mounted on the mounting substrate 20, next, in the electrode bonding step S12, the bumps 4n and 4p of the light emitting element 10 and the element mounting portions 22n and 22p of the mounting substrate 20 are performed by a bonding apparatus (not shown). And join.
Examples of the bonding method include known methods such as a pressure welding method in which pressure and heat are applied between the light emitting element 10 and the mounting substrate 20, an ultrasonic bonding method in which an ultrasonic wave is applied, and an adhesive method using a conductive adhesive. Can be used.

(Sealing process: S13)
Next, in the sealing step S13, the entire light emitting element 10 and the upper surface of the mounting substrate 20 are sealed using, for example, a translucent resin.
As a sealing method, for example, a known molding method using a mold, or a method in which a sealing resin material is dropped on the upper surfaces of the light emitting element 10 and the mounting substrate 20 and cured by heating or ultraviolet irradiation is used. it can.
Through the above steps, the light emitting device 100 shown in FIG. 1A is manufactured.

<Modification>
Next, a modification of the present embodiment will be described with reference to FIG.
In FIG. 8A, the description of the sealing member is omitted, and in FIG. 8B, the hatching of members other than the magnetized region is omitted.

(Modification 1)
In the light emitting device 100 according to the modification shown in FIG. 8A, the magnetized regions 23n and 23p of the mounting substrate 20 have the same shape in plan view as the corresponding magnetized regions 6n and 6p of the light emitting element 10, respectively. is there. It is preferable that the corresponding magnetized regions have the completely same shape. Here, the same shape in plan view means the outer shape in plan view of the magnetized region 6n and the magnetized region 23n, and the magnetized region 6p and the magnetized region 23p. The outer shape in plan view is substantially the same within the range of alignment accuracy. For example, as in the example shown in FIG. 8A, it is ignored that the regions where the bumps 4n and 4p are provided are not magnetized inside the magnetization regions 6n and 6p. In addition, a region that is not magnetized may be included between the magnetized regions 23n and 23p.

  As in the example illustrated in FIG. 8A, the shape of the magnetization regions 23 n and 23 p of the mounting substrate 20 in plan view is substantially the same as the shape of the magnetization regions 6 n and 6 p of the light emitting element 10. Since the position where the magnetic attractive force between the light emitting element 10 and the mounting substrate 20 is maximized, that is, the position where the magnetic pattern coincides is uniquely determined, not only the polarity of the electrodes but also the vertical and horizontal directions in the mounting surface Can be accurately aligned.

(Modification 2)
In the light emitting device 100 according to another modification shown in FIG. 8B, the magnetized regions 23n and 23p of the mounting substrate 20 are parallel to the upper surface of the mounting substrate 20 which is the mounting surface, respectively, and FIG. Are magnetized so that the left side is the N pole and the right side is the S pole. In this modification, the magnetized regions 6n and 6p of the light emitting element 10 are magnetized in the vertical direction on the upper surface of the mounting substrate 20 as in the example shown in FIG.
Thus, each magnetization region is not limited to a magnetization direction perpendicular to the mounting surface, and one or both of the magnetization regions 6n and 6p on the light emitting element 10 side and the magnetization regions 23n and 23p on the mounting substrate 20 side. However, it may be configured to be magnetized horizontally on the mounting surface.

Second Embodiment
Next, a light-emitting device according to a second embodiment of the present invention will be described with reference to FIG.
As shown in FIG. 9, the light emitting device 100A according to the second embodiment includes the light emitting element placement step S11 (FIG. 11) in the first embodiment without providing a magnetization region in the element placement portions 22An and 22Ap of the mounting substrate 20A. 3), an electromagnet 90 is disposed on the back side of the mounting substrate 20A, and a magnetic pattern matching the magnetic pattern of the light emitting element 10 is generated to perform alignment.

  As the electromagnet (magnetic field generating means) 90, for example, one having the same configuration as the magnetizing device 70 shown in FIG. 6A can be used. The electromagnet 90 shown in FIG. 9 is comprised from the yoke 91, the power supply 93, and the electric wire 94 which connects both similarly to the magnetizing apparatus 70. FIG. The yoke 91 is bifurcated so as to have a core 91n and a core 91p, and a coil 92n and a coil 92p are wound around the core 91n and the core 91p in opposite directions, respectively.

In this example, the coil 92n and the coil 92p are connected in series, and the coil 92n side is connected to the positive electrode of the power source 93, and the coil 92p side is connected to the negative electrode of the power source 93, so that a current flows. Becomes the N pole, and a magnetic field is generated upward, and a downward magnetic field is generated in which the upper surface of the core 91p is the S pole.
The shapes of the upper surfaces of the core 91n and the core 91p are the same as the shapes of the element mounting portions 22An and 22Ap of the mounting substrate 20A, respectively.

In the second embodiment, in the light emitting element placement step S11 (see FIG. 3), a magnetic pattern that coincides with the magnetization regions 6n and 6p of the light emitting element 10 is generated from the back side of the mounting substrate 20A using the electromagnet 90. Thus, alignment between the light emitting element 10 and the mounting substrate 20A is performed.
For this reason, it is not necessary to make the element mounting parts 22n and 22p which are wiring patterns contain a magnetic body, and the element mounting parts 22n and 22p can obtain favorable electroconductivity and rust prevention as an electrode.

The electromagnet is not limited to the one having a bifurcated yoke, and may be configured using a plurality of independent electromagnets for each magnetization region.
Further, the upper surface of the core 91n and the core 91p has the same shape as that of the magnetized region 6n and the magnetized region 6p of the light emitting element 10 in plan view, so that the first embodiment shown in FIG. Similar to the light emitting device 100 according to the modification of the embodiment, the alignment of the light emitting element 10 and the mounting substrate 20A can be accurately performed not only in the polarity matching of the electrodes but also in the vertical and horizontal directions on the mounting surface. .

  The light emitting device 100A according to the second embodiment is the first embodiment except that the element mounting portions 22An and 22Ap of the mounting substrate 20A have no magnetization region and use an electromagnet in the light emitting element mounting step S11 (see FIG. 3). Since it is the same as that of the light-emitting device 100 according to the embodiment, description of other configurations, other manufacturing processes, and operations of the light-emitting device is omitted.

  In this embodiment, two magnetized regions magnetized in opposite directions in the vertical direction are provided on the light emitting element side, and a magnetic field matching this is generated from the back surface side of the mounting substrate by a magnetic field generating means such as an electromagnet. However, the present invention is not limited to this. There may be one magnetized region on the light emitting element side, or three or more. Further, the surface on which the magnetized region on the light emitting element side (that is, the mounting surface) may be a surface opposite to the surface on which the electrode is provided, as in a fourth embodiment described later.

  Furthermore, the magnetization direction of the magnetization region on the light emitting element side may be a horizontal direction. In particular, by setting the magnetization direction to the horizontal direction, the mounting direction (direction) of the light emitting element with respect to the mounting substrate can be correctly aligned even if there is one magnetization region. In this case, a magnetic field may be generated in the horizontal direction by the magnetic field generation means so as to coincide with the magnetization direction of the magnetization region on the light emitting element side.

  In any case, when the light emitting element is placed in a predetermined direction or a predetermined direction and a predetermined position with respect to the mounting substrate, the magnetization region on the light emitting element side receives a magnetic attractive force from the magnetic field. The magnetic field may be generated by the magnetic field generating means.

<Third Embodiment>
Next, a light-emitting device according to a third embodiment of the present invention will be described with reference to FIG.
As shown in FIG. 10, the light emitting device 100 </ b> B according to the third embodiment is different from the light emitting device 100 according to the first embodiment shown in FIG. The difference is that a reflective layer 6B covering the side surface is provided, and an insulating layer 7 is further provided on the bottom surface side of the reflective layer 6B. That is, in the light emitting element 10B according to the third embodiment, the reflective layer 6B does not contain a magnetic substance, and the insulating layer 7 containing a magnetic substance is provided on the bottom surface of the light emitting element 10B. Then, magnetization regions corresponding to the magnetization regions 6 n and 6 p shown in FIG. 2 are formed in the insulating layer 7.
Since other configurations are the same as those of the light emitting device 100 according to the first embodiment, detailed description thereof is omitted.

Since the light emitting element 10B according to the third embodiment does not contain a magnetic material in the reflective layer 6B and the insulating layer 7 containing the magnetic material is provided independently, the reflective layer 6B is affected by light absorption by the magnetic material. And good reflectivity can be obtained.
The light emitting element 10B is manufactured by potting in the method for manufacturing the light emitting element 10 according to the first embodiment shown in FIGS. 4 and 5, for example, without using the upper mold 51 when forming the reflective layer 6B. An insulating resin containing a magnetic material on the upper surface of the reflective layer 6B after dropping the reflective resin material, forming the reflective layer 6B on the side surface and upper surface of the chip 11 (the upper surface of the semiconductor light emitting element structure 3), and curing the resin. The insulating layer 7 may be stacked by supplying a material. The reflective layer 6B is formed so as to be thinner than the bumps 4n and 4p in consideration of the thickness required for the insulating layer 7.

  In the light emitting device and the modification thereof according to each embodiment described above, the magnetization region on the light emitting element side and the magnetization region on the mounting substrate side include an electrode (bump) of the light emitting element and an element mounting portion of the mounting substrate. What is necessary is just to be formed so that it can align correctly with the magnetic force between mutual magnetization area | regions. In other words, it is only necessary that the magnetized region is formed so that the magnetic pattern on the light emitting element side matches the magnetic pattern on the mounting board side and the light emitting element is correctly aligned with the mounting board.

For example, the magnetization regions of the light emitting element and the mounting substrate are not limited to two regions, but may be formed by three or more regions, or may be one region. When the magnetized region is one region, the light-emitting element can be correctly aligned with the mounting substrate by being attracted by a magnetic field applied by a magnetizing region on the mounting substrate side or an electromagnet. By providing two or more magnetization regions having different magnetization directions in each of the light emitting element and the mounting substrate, the direction of the light emitting element can be specified, so that the direction of the light emitting element can be correctly aligned with the mounting substrate. Accordingly, the light emitting element can be aligned with the mounting substrate so that the orientation of the electrodes is correct.
Further, the magnetization direction is not limited to the direction perpendicular to the mounting surface, and one or both of the magnetization regions on the light emitting element side and the mounting substrate side may be in the horizontal direction on the mounting surface. Furthermore, the magnetized region of the light emitting element is not limited to be formed so as to surround the electrode (bump) in plan view, and can be formed in an arbitrary shape on the bottom surface of the light emitting element.

  Further, the light-emitting element of the present invention is not limited to the one mounted face-down, and may be a face-up mounting type light-emitting element. In this case, a magnetic layer may be formed by providing a reflective layer containing a magnetic material on the substrate of the light emitting element or an insulating layer containing a magnetic material independent of the reflective layer. The electrode of the light emitting element and the electrode of the mounting substrate may be connected by wire bonding.

<Fourth embodiment>
Next, with reference to FIG. 11, the light-emitting device which concerns on 4th Embodiment of this invention is demonstrated.
As shown in FIG. 11, a light emitting device 100C according to the present embodiment is configured by mounting a light emitting element 10C face up on a mounting substrate 20C. That is, the light emitting device 100C according to the present embodiment is different from the light emitting device 100 according to the first embodiment illustrated in FIG. More specifically, the LED chip 1C is mounted on the mounting substrate 20C with the substrate 2 side as a mounting surface, the light is extracted from the semiconductor light emitting element structure 3C side of the LED chip 1C, and the n-side electrodes 3n and p The side electrode 3p, the wiring pattern 22Cn, and the wiring pattern 22Cp are electrically connected by bonding wires 24n and 24p, respectively, and the magnetized region 6a magnetized in the horizontal direction is the back surface of the LED chip 1C. Provided on the reflective layer 6C covering the back surface of the LED, the magnetized region 23f magnetized in the horizontal direction provided on the element mounting portion 22f, and the n-side electrodes 3n and p of the LED chip 1C. The difference is that the fluorescent layer 5 is provided on the surface and side surfaces excluding the region where the side electrode 3p is formed.
The element mounting portion 22f is an electrically floating pattern provided on the support substrate 21 in the same layer as the wiring patterns 22Cn and 22Cp.

Here, in FIG. 11, the magnetized region 6a is magnetized in the horizontal direction so that the left side is the N pole and the right side is the S pole. Further, in FIG. 11, the magnetized region 23f is magnetized in the horizontal direction so that the left side is the S pole and the right side is the N pole. That is, the magnetization direction on the light emitting element 10C side and the magnetization direction on the mounting substrate 20C side are opposite to each other, and the magnetic region 6a and the magnetization region 23f are joined in a state in which a magnetic attractive force acts.
It is preferable that substantially the entire bottom surface, which is the mounting surface of the light emitting element 10C, be the magnetized region 6a. Thereby, when mounting the light emitting element 10C on the mounting substrate 20C, the magnetic force that effectively acts for alignment is increased, and the mounting reliability can be improved.

In the present embodiment, the magnetized region 23f is provided in the element mounting portion 22f that is separated from the wiring patterns 22Cn and 22Cp and independent. When providing a magnetized region in a wiring pattern electrically connected to a light emitting element, it is necessary to consider the shape and arrangement of the magnetized region so that electric characteristics such as electric resistance are not deteriorated. As described above, it is preferable to make the magnetized region 23f independent of the wiring patterns 22Cn and 22Cp electrically connected to the light emitting element 10C, thereby reducing the possibility of deterioration of electrical characteristics and the like. Further, the magnetized region 23 f may be provided so as to be inherent in the support substrate 21.
Further, in the present embodiment, the shape of the element placement portion 22f in plan view is substantially the same as the bottom shape of the light emitting element 10C. That is, substantially the entire surface of the element mounting portion 22f is a magnetization region 23f.

  In the present embodiment, the magnetized region 23f on the mounting substrate 20C side is provided on the element mounting portion 22f independent of the wiring patterns 22Cn and 22Cp. However, the present invention is not limited to this. Similarly to the first embodiment, the magnetized region 22f may be provided in both or one of the wiring pattern 22Cn and the wiring pattern 22Cp.

Further, the magnetization direction of the magnetization region 23f is not limited to the horizontal direction. As in the first embodiment, the bottom surface of the reflective layer 6C is provided with the magnetized region 6n and the magnetized region 6p (see FIG. 2) that are opposite to each other in the vertical direction, and the element mounting portion 22f is opposite to each other in the vertical direction. The magnetized region 23n and the magnetized region 23p (see FIG. 2) may be provided. Further, as in the modification of the first embodiment shown in FIG. 8B, the light emitting element 10C side or the mounting substrate The magnetization direction of the magnetization region may be the horizontal direction for one of the 20C sides, and the magnetization direction may be the vertical direction for the other.

  Further, when a plurality of (for example, two) magnetized regions are formed on the bottom surface side of the light emitting element 10C, the respective magnetized regions overlap or surround the n-side electrode 3n and the p-side electrode 3p in plan view. It is preferable to form. Thus, when the light emitting element 10C is mounted on the mounting substrate 20C, the electrodes can be aligned more accurately.

  The light emitting device 100C according to the fourth embodiment operates in the same manner except that power is supplied through the bonding wires 24n and 24p and that the light extraction surface is on the semiconductor layer side of the LED chip 1C. Therefore, detailed description is omitted.

Next, a method for manufacturing the light emitting device 100C according to the fourth embodiment will be described. Note that, as for the light emitting device 100 according to the first embodiment, description of steps is omitted as appropriate.
First, a specific example of a method for manufacturing a film that becomes the magnetization region 6a provided in the reflective layer 6C will be described.
Similarly to the first embodiment shown in FIG. 1B, after the crystal growth of the n-type semiconductor layer 3a, the active layer 3b, and the p-type semiconductor layer 3c on the surface side of the substrate 2 by the MOCVD method in order, A SiO ₂ film having a thickness of 150 nm is formed on the back side of the substrate 2 by magnetron sputtering. Thereafter, a film having a thickness of about 3 μm is formed by magnetron sputtering using Bi _1.5 Y _1.0 Dy _1.0 Fe _3.8 Al _1.2 O _x as a target, and is 750 ° C. in the atmosphere. By performing annealing treatment for about 1 hour, a garnet film having magnetism can be formed as the insulating film. Further, by laminating a SiO ₂ film and a garnet film having different refractive indexes, the insulating film constituted by these laminated films also functions as a reflective film.

By magnetizing the insulating film made of the garnet film, the magnetized region 6a can be formed on the bottom surface of the LED chip 1C.
Furthermore, a reflective film containing a light reflecting member may be laminated outside the insulating film, and the reflective layer 6C provided with a magnetized region may be configured together with the insulating film. Further, a reflective film may be formed on the back surface of the substrate 2, and a magnetic insulating film such as the above-described garnet film may be laminated on the reflective film.

Thereafter, the LED chip 1C can be manufactured by forming the n-side electrode 3n, the p-side electrode 3p, and the like using a photolithography method, an RIE method, a sputtering method, and the like.
Since light is extracted from the semiconductor layer side of the LED chip 1C, the entire surface electrode provided on the p-type semiconductor layer 3c is made of a conductive material having good translucency such as ITO (indium-tin oxide). It is preferable to form.

  The LED chip 1C is positioned so that the polarities of the electrodes are matched using magnetic force in the same manner as in the first embodiment, and an element mounting portion is used using a bonding member such as solder (not shown), for example. It is mounted on the element mounting portion 22f. Then, the n-side electrode 3n and the wiring pattern 22Cn, and the p-side electrode 3p and the wiring pattern 22Cp are electrically connected using bonding wires 24n and 24p, respectively. Thereafter, the light emitting element 10C, the bonding wires 24n and 24p, and the mounting substrate 20C are sealed using the sealing member 30. Thus, the light emitting device 100C is completed.

1, 1C LED chip 2 substrate 3, 3C semiconductor light emitting element structure 3a n-type semiconductor layer (semiconductor layer)
3b Active layer (semiconductor layer)
3c p-type semiconductor layer (semiconductor layer)
3d full surface electrode 3e cover electrode 3n n side electrode (electrode, first electrode)
3pp p-side electrode (electrode, second electrode)
4 Bump (electrode for external connection)
4n Bump (first external connection electrode)
4p Bump (second external connection electrode)
5, 5C Fluorescent layer (wavelength conversion member)
6, 6C Reflective layer (insulating layer)
6B Reflective layer 6n Magnetization region (first magnetization region)
6p magnetization region (second magnetization region)
6a Magnetized region 7 Insulating layer 10, 10A, 10B, 10C Light emitting element 11 Chip 12, 13 Boundary line 20, 20A, 20C Mounting substrate 21 Support substrate 22n, 22An Element mounting portion (first wiring pattern)
22p, 22Ap element placement part (second wiring pattern)
22f Element placement portion 22Cn wiring pattern (first wiring pattern)
22Cp wiring pattern (second wiring pattern)
23n magnetization region (third magnetization region)
23p magnetization region (fourth magnetization region)
23f Magnetized region 24n Bonding wire 24p Bonding wire 30 Sealing member 40, 42 Carrier (flat jig)
41, 43 Adhesive sheet 50, 52 Lower mold 51, 53 Upper mold 60 Polishing machine 61, 62 Polishing wire 70 Magnetizing device 71 Yoke 71n, 71p Core 72n, 72p Coil 73 Power supply 74 Electric wire 80 Collet (conveying means)
81 Shaft portion 82 Adsorption portion 83 Joint 90 Electromagnet (magnetic field generating means)
91 Yoke 91n, 91p Core 92n, 92p Coil 93 Power supply 94 Electric wire 100, 100A, 100B, 100C Light emitting device

Claims (22)

A light emitting element having a semiconductor layer and an electrode electrically connected to the semiconductor layer,
Having an insulating layer on the mounting surface side of the light emitting element;
The light-emitting element, wherein the insulating layer has a magnetized region containing a magnetic substance.   The light-emitting element according to claim 1, wherein the magnetization region is provided on substantially the entire mounting surface of the light-emitting element.   The light emitting device according to claim 1, wherein the insulating layer contains a light reflecting material that reflects light emitted from the semiconductor layer.   4. The light emitting device according to claim 1, wherein the insulating layer has at least two magnetization regions having different magnetization directions. 5.   The light emitting device according to claim 4, wherein the insulating layer includes a first magnetization region and a second magnetization region having a magnetization direction different from that of the first magnetization region as the magnetization region.   The insulating layer is a rectangle having a longitudinal direction and a transverse direction in plan view, has the first magnetization region at one end in the longitudinal direction, and has the first magnetization region at the other end in the longitudinal direction. The light emitting device according to claim 5, wherein the light emitting device has two magnetization regions.   The first electrode and the second electrode are provided on the same surface as the electrode, and the mounting surface is a surface on which the electrode is provided. Light emitting element.   The first electrode and the second electrode are provided on the same surface as the electrode, the mounting surface is a surface on which the electrode is provided, the first magnetization region is provided around the first electrode, and the second electrode The light emitting device according to claim 5, wherein the second magnetization region is provided around an electrode.   The first electrode and the second electrode are provided on the same surface as the electrode, and the mounting surface is a surface opposite to the surface on which the electrode is provided. The light emitting element according to one item.   The light-emitting device which mounted the light emitting element as described in any one of Claims 1-9 on the mounting board | substrate.   The mounting substrate is magnetized in a direction in which a magnetic attraction acts between the light emitting element and a magnetization region of the light emitting element when the light emitting element is placed in a predetermined direction or a predetermined direction and a predetermined position. The light emitting device according to claim 10, further comprising a magnetized region.   The light emitting device according to claim 11, wherein the magnetization region of the mounting substrate is provided independently of a wiring pattern electrically connected to the light emitting element. The mounting circuit board according to any one of Claims 7, 8, and 6, or 6, wherein the Claim 5, the Claim 6, and the Claim 6 are cited. A light emitting device equipped with a light emitting element,
The mounting substrate is magnetized in a direction in which a magnetic attraction acts between the third magnetization region and the second magnetization region, which is magnetized in a direction in which a magnetic attraction acts between the first magnetization region and the second magnetization region. A light emitting device having four magnetized regions.   The plan view of claim 13, wherein the third magnetization region has the same outer shape as the first magnetization region, and the fourth magnetization region has the same outer shape as the second magnetization region. Light-emitting device.   The mounting substrate includes a first wiring pattern connected to the first electrode and a second wiring pattern connected to the second electrode. The light emitting device according to item.   The light emitting device according to claim 15, wherein the first wiring pattern has the third magnetization region, and the second wiring pattern has the fourth magnetization region. A method for manufacturing a light emitting device according to any one of claims 10 to 16,
A method of manufacturing a light-emitting device, comprising: a light-emitting element mounting step of mounting the light-emitting element so that a mounting surface faces the mounting substrate.   The method of manufacturing a light emitting device according to claim 17, wherein in the light emitting element mounting step, the magnetization region of the light emitting element and the magnetization region of the mounting substrate are aligned using a magnetic force. A method for manufacturing a light emitting device according to claim 15,
A light emitting element mounting step of mounting the surface of the light emitting element facing the mounting substrate;
An electrode joining step of electrically connecting the first electrode and the first wiring pattern and electrically connecting the second electrode and the second wiring pattern;
In this order. A method for manufacturing a light-emitting device. A method of manufacturing a light emitting device according to claim 16,
A light emitting element mounting step of mounting the surface of the light emitting element facing the mounting substrate;
An electrode joining step of electrically connecting the first electrode and the first wiring pattern and electrically connecting the second electrode and the second wiring pattern;
In this order,
In the light emitting element mounting step, the first magnetization region, the third magnetization region, the second magnetization region, and the fourth magnetization region are aligned using magnetic force, respectively. Manufacturing method. It is a manufacturing method of the light-emitting device according to claim 10,
A light emitting element mounting step of mounting the light emitting element mounting surface facing the mounting substrate;
In the light emitting element mounting step, magnetic field generating means is installed on a surface of the mounting substrate opposite to the side on which the light emitting element is mounted, and the light emitting element is in a predetermined direction or a predetermined direction with respect to the mounting substrate. A method of manufacturing a light emitting device, wherein the magnetic field generating means generates the magnetic field so that the magnetized region of the light emitting element receives a magnetic attraction from the magnetic field when placed in a direction and at a predetermined position. . The manufacturing method of the light-emitting device which mounts the light emitting element of Claim 8 on the mounting substrate which has the 1st wiring pattern connected with the said 1st electrode, and the 2nd wiring pattern connected with the said 2nd electrode. Because
A light emitting element mounting step of mounting the light emitting element with the mounting surface facing the mounting substrate;
An electrode joining step of electrically connecting the first electrode and the first wiring pattern and electrically connecting the second electrode and the second wiring pattern;
In this order,
In the light emitting element mounting step, a magnetic field generation unit is installed on a surface of the mounting substrate opposite to the side having the first wiring pattern and the second wiring pattern, and the first magnetization is generated by the magnetic field generation unit. A method of manufacturing a light emitting device, wherein a magnetic field is generated so that a region receives a magnetic attraction toward the first wiring pattern and a second magnetization region receives a magnetic attraction toward the second wiring pattern .

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