CN117153992A

CN117153992A - Light emitting diode device and manufacturing method thereof

Info

Publication number: CN117153992A
Application number: CN202310842892.9A
Authority: CN
Inventors: 胡勋涛; 赵宇冰
Original assignee: Zhuhai Huahui Zhizao Semiconductor Co ltd
Current assignee: Zhuhai Huahui Zhizao Semiconductor Co ltd
Priority date: 2023-07-10
Filing date: 2023-07-10
Publication date: 2023-12-01

Abstract

The present disclosure provides a light emitting diode device and a method for manufacturing the same, which belong to the field of light emitting devices. The light emitting diode device includes: the light-emitting diode chip, the fluorescent sheet, the retaining wall and the substrate; the light-emitting diode chip is bonded with the substrate, the fluorescent sheet is attached to the surface of the light-emitting diode chip, the retaining wall is positioned on the substrate, and the retaining wall wraps the side face of the light-emitting diode chip and the side face of the fluorescent sheet; the light emitting diode chip and the fluorescent sheet are magnetically attracted together.

Description

Light emitting diode device and manufacturing method thereof

Technical Field

The present disclosure relates to the field of light emitting devices, and in particular, to a light emitting diode device and a method for manufacturing the same.

Background

A light emitting diode (Light Emitting Diode, LED) chip is a semiconductor electronic component capable of emitting light. As a novel efficient, environment-friendly, green solid-state lighting source, it is being rapidly and widely applied, such as traffic lights, interior and exterior lights of automobiles, urban landscape lighting, cell phone backlights, and the like.

After the LED chip is manufactured, the LED chip is packaged, and an LED device is obtained. The related art proposes an LED packaging method, including: bonding (bonding) the light emitting diode chip and the substrate; coating silica gel on the surface of the LED chip far away from the substrate; bonding a fluorescent sheet through silica gel; and manufacturing a retaining wall wrapping the side surface of the light-emitting diode chip and the side surface of the fluorescent sheet on the substrate.

In the packaging method in the related art, silica gel is used for bonding the fluorescent sheet and the LED chip, and the silica gel can change color and crack under long-term high-temperature radiation and low-band illumination of the LED chip, so that the LED light color is abnormal and the fluorescent sheet falls off.

Disclosure of Invention

The disclosure provides a light-emitting diode device, which solves the problems of falling off of a fluorescent sheet and abnormal light color of a light-emitting diode caused by bonding the fluorescent sheet and the light-emitting diode chip by using silica gel. The light emitting diode device includes:

the light-emitting diode chip, the fluorescent sheet, the retaining wall and the substrate;

the light-emitting diode chip is bonded with the substrate, the fluorescent sheet is attached to the surface of the light-emitting diode chip, the retaining wall is positioned on the substrate, and the retaining wall wraps the side face of the light-emitting diode chip and the side face of the fluorescent sheet;

the light emitting diode chip and the fluorescent sheet are magnetically attracted together.

Optionally, the light emitting diode chip is a blue light chip containing magnetic material, the fluorescent sheet is a fluorescent sheet containing magnetic material, and polarities of the magnetic materials in the light emitting diode chip and the fluorescent sheet are opposite.

Optionally, the light emitting diode chip is a blue light chip containing a substance capable of being adsorbed by magnetic force, and the fluorescent sheet is a fluorescent sheet containing a magnetic material.

Optionally, the light emitting diode chip is a blue light chip containing magnetic materials, and the fluorescent sheet is a fluorescent sheet containing substances capable of being adsorbed by magnetic force.

Optionally, the magnetic material is a high temperature resistant magnetic material.

Optionally, a surface of the retaining wall away from the substrate is flush with a surface of the fluorescent sheet away from the substrate.

Optionally, the fluorescent sheet is a glass fluorescent sheet or a ceramic fluorescent sheet.

In another aspect, a method for manufacturing a light emitting diode device is provided, the method including:

bonding the light emitting diode chip with the substrate;

attaching a fluorescent sheet to the surface of the light-emitting diode chip, wherein the light-emitting diode chip and the fluorescent sheet are adsorbed together by magnetism;

and manufacturing a retaining wall wrapping the side surface of the light emitting diode chip and the side surface of the fluorescent sheet on the substrate.

Optionally, the method further comprises:

and evaporating a layer of magnetic material or substances which can be adsorbed by magnetic force on the surface of the light-emitting diode chip far away from the substrate, and attaching the fluorescent sheet on the surface of the light-emitting diode chip far away from the substrate.

Optionally, the method further comprises:

mixing the magnetic material, the fluorescent powder and the glass powder or the ceramic powder, and sintering the mixture in an environment with the temperature higher than 1700-1800 ℃ to form the glass fluorescent sheet or the ceramic fluorescent sheet.

The technical scheme provided by the embodiment of the disclosure has the beneficial effects that:

according to the fluorescent light-emitting diode chip and the fluorescent sheet, the fluorescent sheet and the fluorescent light-emitting diode chip are magnetically adsorbed together, so that the phenomenon that the color of the fluorescent light-emitting diode is abnormal and the fluorescent sheet falls off due to the fact that the color of the fluorescent light-emitting diode chip and the fluorescent sheet are discolored and cracked under high-temperature environment and short-wavelength illumination of the silica gel is avoided.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings may be obtained according to these drawings without inventive effort for a person of ordinary skill in the art.

Fig. 1 is a schematic structural diagram of a light emitting diode device according to an embodiment of the present disclosure;

fig. 2 is a schematic structural diagram of a light emitting diode chip according to an embodiment of the disclosure;

fig. 3 is a schematic structural diagram of another light emitting diode chip according to an embodiment of the disclosure;

fig. 4 is a schematic structural diagram of an epitaxial layer of a blue light chip according to an embodiment of the disclosure;

fig. 5 is a schematic structural diagram of a red light chip epitaxial layer according to an embodiment of the disclosure;

fig. 6 is a flowchart of a method for manufacturing a light emitting diode device according to an embodiment of the present disclosure;

fig. 7 is a flowchart of a method for manufacturing another light emitting diode device according to an embodiment of the present disclosure.

Detailed Description

For the purposes of clarity, technical solutions and advantages of the present disclosure, the following further details the embodiments of the present disclosure with reference to the accompanying drawings.

Fig. 1 is a schematic structural diagram of a light emitting diode device according to an embodiment of the present disclosure. Referring to fig. 1, the light emitting diode device includes: the light emitting diode chip 12, the fluorescent sheet 14, the retaining wall 13 and the substrate 11.

The light emitting diode chip 12 is bonded to the substrate 11, the fluorescent sheet 14 is attached to the surface of the light emitting diode chip 12, the retaining wall 13 is located on the substrate 11, and the retaining wall 13 wraps the side surface of the light emitting diode chip 12 and the side surface of the fluorescent sheet 14.

The light emitting diode chip 12 and the fluorescent sheet 14 are magnetically attracted together.

Wherein, the fluorescent sheet is attached to the surface of the light emitting diode chip far away from the substrate.

In one example, the led chip 12 is a blue light chip containing a magnetic material, the fluorescent sheet 14 is a fluorescent sheet containing a magnetic material, and the polarities of the magnetic materials in the led chip 12 and the fluorescent sheet 14 are opposite.

The chip and the fluorescent sheet are attracted together by magnetic force by manufacturing the chip and the fluorescent sheet containing magnetic materials with different polarities.

For example, the light emitting diode chip 12 may be a blue light chip containing a positive polarity magnetic material, and the fluorescent sheet 14 may be a fluorescent sheet containing a negative polarity magnetic material.

For another example, the light emitting diode chip 12 may be a blue light chip containing a magnetic material of negative polarity, and the fluorescent sheet 14 may be a fluorescent sheet containing a magnetic material of positive polarity.

For example, the led chip 12 may be a chip of another color, such as a red light chip, a yellow light chip, or the like.

In another example, the light emitting diode chip 12 is a blue light chip containing a magnetically attractable substance, and the fluorescent sheet 14 is a fluorescent sheet containing a magnetic material.

In this implementation, the fluorescent sheet 14 having magnetism and the light emitting diode chip 12 having no magnetism but having a substance that can be attracted by the magnetic force, the fluorescent sheet 14 and the light emitting diode chip 12 are attracted together by the magnetic force of the fluorescent sheet 14.

In another example, the led chip 12 is a blue light chip containing a magnetic material, and the fluorescent sheet 14 is a fluorescent sheet containing a magnetically attractable substance.

In this implementation, the light emitting diode chip 12 having magnetism and the fluorescent sheet 14 having no magnetism but having a substance that can be attracted by magnetism are attracted together by the magnetism of the light emitting diode chip 12.

The magnetic materials used in the led chip 12 or the fluorescent sheet 14 are, for example, high temperature resistant magnetic materials.

The high-temperature resistant magnetic material is a magnetic material capable of bearing high temperature of 250-280 ℃, and a magnetic layer formed by the magnetic material cannot be demagnetized.

For example, the high temperature resistant magnetic powder may be magnetic Ru-Fe-B, magnetic barium ferrite, magnetic ferrite, mn-doped magnetic indium tin oxide, or the like.

Because the temperature of the light emitting diode is higher when the light emitting diode is used, and the magnetism is demagnetized along with the temperature rise, a high-temperature-resistant magnetic material is needed to be used so as to avoid the phenomenon of demagnetization.

Illustratively, the magnetically adsorbable substance may be iron powder or the like.

In the light emitting diode device shown in fig. 1, the light emitting diode chip 12 has a wall 13 on a side surface thereof. The surface of the retaining wall 13 away from the substrate 11 is flush with the surface of the fluorescent sheet 14 away from the substrate 11, and the retaining wall 13 may be formed of a material such as silicone, epoxy, silicone, polypropylene (PP), etc. For example, the retaining wall 13 may be formed of epoxy.

The use of the retaining wall 13 with the height being flush with the fluorescent sheet 14 prevents the retaining wall 13 from being too high to shield the light emitted by the light emitting diode chip through the fluorescent sheet, and also prevents the retaining wall 13 from being too low to form effective package for the light emitting diode chip 12.

In some examples, the thickness of the retaining wall 13 may be 1-2mm. For example, the thickness of the retaining wall 13 may be 1mm.

The thickness of the retaining wall 13 is merely an example, and may be adjusted as needed in practice.

It should be noted that the fluorescent sheet 14 used in the led device shown in fig. 1 may be a ceramic fluorescent sheet or a glass fluorescent sheet.

The above-described fluorescent sheet 14 is used so that the light emitting diode device can emit light with a better effect.

It should be noted that other components such as a zener diode chip may be further included in the led device, and the zener diode chip is connected in parallel with the led chip 12, so as to improve the stability of the package.

Illustratively, the zener diode chip may be co-planar with the light emitting diode chip 12.

The light emitting diode chip is exemplarily described below with reference to the accompanying drawings:

fig. 2 is a schematic structural diagram of a light emitting diode chip according to an embodiment of the disclosure. Referring to fig. 2, the led chip 12 is a flip-chip led chip, and includes: a substrate 201, a first conductive type semiconductor layer 202, an active layer 203, a second conductive type semiconductor layer 204, a conductive layer 205, a distributed bragg reflector (Distributed Bragg Reflector, DBR) reflection layer 208, a first electrode 206 located on the surface of the first conductive type semiconductor layer 202, a second electrode 207 located on the surface of the conductive layer 205, a first electrode pad 209 located on the surface of the first electrode 206, and a second electrode pad 210 located on the surface of the second electrode 207, which are sequentially stacked on the surface of the substrate 201.

The flip chip shown in fig. 2, due to its electrical face down, can be packaged with the electrode pads of the flip chip soldered to pads on the substrate 11, thereby bonding the flip chip to the substrate 11. The flip chip is in contact with the fluorescent sheet 14 at a side close to the substrate 201, and thus the magnetic layer 200 is provided in a portion of the flip chip close to the substrate 201. The electrical plane is a plane having an electrode pad.

The magnetic layer 200 may be a film layer made of a magnetic material or a film layer made of a substance that can be magnetically adsorbed.

Referring again to fig. 2, the magnetic layer 200 is located on the other side of the substrate 201 away from the epitaxial layers. The epitaxial layer includes a first conductive type semiconductor layer 202, an active layer 203, and a second conductive type semiconductor layer 204.

The flip chip and the fluorescent sheet 14 are attracted together by the magnetic layer 200, and the magnetic layer 200 is disposed close to the substrate 201, so that the attraction force with the fluorescent sheet 14 can be ensured.

In one example, the magnetic layer 200 may be a magnetic layer formed by vapor deposition of magnetic powder, and in this case, to avoid light blocking of the magnetic layer 200, the magnetic layer 200 may be a patterned magnetic layer, instead of the magnetic layer 200 covering the surface of the substrate 201 shown in fig. 2.

For example, patterned magnetic ferrite is evaporated to form the magnetic layer 200.

For another example, patterned magnetic barium ferrite is evaporated to form the magnetic layer 200.

In another example, the magnetic layer 200 is an Mn-doped magnetic Indium Tin Oxide (ITO) layer.

In the embodiment of the present disclosure, the first conductive type semiconductor layer 202 is an N type semiconductor layer, the active layer 203 includes a shallow well layer and a multiple quantum well (Multi Quantum Well, MQW) light-emitting layer, the second conductive type semiconductor layer 204 is a P type semiconductor layer, the first electrode 206 is an N electrode, and the second electrode 207 is a P electrode.

In another example, the first conductive type semiconductor layer 202 may be a P type semiconductor layer, the active layer 203 includes a shallow well layer and an MQW light-emitting layer, the second conductive type semiconductor layer 204 is an N type semiconductor layer, the first electrode 206 is a P electrode, and the second electrode 207 is an N electrode.

Fig. 3 is a schematic structural diagram of another led chip according to an embodiment of the disclosure. Referring to fig. 3, the led chip 12 shown in fig. 3 is a front-loading led chip. The epitaxial layer structure is identical to that of the flip-chip led shown in fig. 2, except that the front-mounted led shown in fig. 3 does not have the DBR reflective layer 208, the passivation layer 301 is provided on the conductive layer 205, and the magnetic layer 200 is provided on the surface of the passivation layer 301.

The front-mounted light emitting diode shown in fig. 3 is packaged such that the side close to the substrate 201 is bonded to the substrate 11 with the electrical surface facing upward, and the electrical surface is bonded to the fluorescent sheet 14. Thus, the magnetic layer 200 is located on the surface of the passivation layer 301 near the electrical plane.

Referring again to fig. 3, the magnetic layer 200 in the forward mounted light emitting diode chip shown in fig. 3 is positioned on the surface of the passivation layer 301, the magnetic layer 200 is not in contact with the electrode pad, and the forward mounted light emitting diode chip and the fluorescent sheet 14 are attracted together by the magnetic layer 200.

In other examples, the LED chip 12 may be a vertical LED chip, and the magnetic layer 200 may be formed on the surface of the film layer where the chip contacts the fluorescent sheet 14. The magnetic layer 200 may be located on the passivation layer surface, for example.

In addition to the above examples, the magnetic layer 200 is located on the surface of the chip substrate 201 and the surface of the passivation layer 301, the magnetic layer 200 may be located inside the epitaxial layer of the chip or on both sides of the epitaxial layer, which is not limited in this disclosure.

The light emitting diode chip 12 may be a blue light chip, a red light chip, or the like. The blue light emitting diode chip will be described by taking the structure of fig. 4 as an example, and the red light emitting diode chip will be described by taking the structure of fig. 5 as an example.

Fig. 4 is a schematic structural diagram of a blue LED epitaxial layer according to an embodiment of the present disclosure. Referring to fig. 4, fig. 4 shows a film structure of a substrate and an epitaxial layer. The epitaxial layers comprise an AlGaN buffer layer 401, a GaN three-dimensional layer 402, a GaN two-dimensional layer 403, an n-GaN layer 404, a first barrier layer 405, an InGaN/GaN shallow well layer 406, a second barrier layer 407, an MQW light-emitting layer 408, a GaN low-temperature P layer 409, a P-type AlGaN electron blocking layer 410, a P-type GaN layer 411 and a P-type contact layer 412.

The first conductive semiconductor layer 202 is an N-type semiconductor layer, and includes an AlGaN buffer layer 401, a GaN three-dimensional layer 402, a GaN two-dimensional layer 403, and an N-GaN layer 404 sequentially stacked on the substrate 201.

The active layer 203 includes a shallow well layer including a first barrier layer 405, an InGaN/GaN shallow well layer 406, and a second barrier layer 407, and an MQW light-emitting layer 408 sequentially stacked on the first conductive type semiconductor layer 202.

The second conductive type semiconductor layer 204 is a P type semiconductor layer, and includes a GaN low temperature P type layer 409, a P type AlGaN electron blocking layer 410, a P type GaN layer 411, and a P type contact layer 412 sequentially stacked on the active layer 203.

In embodiments of the present disclosure, the shallow well layer may include multiple periods of InGaN/GaN shallow well layer 406 therein, for example 4 periods; the active layer 203 may include a plurality of periods of the MQW light-emitting layer 408, for example 8 periods.

Illustratively, the number of periods of the InGaN/GaN shallow well layer 406 may be 2-10, for example, the number of periods of the InGaN/GaN shallow well layer 406 may be 5.

Illustratively, the number of periods of the MQW light-emitting layer 408 may be 5 to 10, for example, the number of periods of the MQW light-emitting layer 408 may be 7.

Fig. 5 is a schematic diagram of an epitaxial layer structure of a red light chip according to an embodiment of the disclosure. Referring to fig. 5, the epitaxial layer includes: a GaP window layer 501, a first AlInP carrier confinement layer 502, a multiple quantum well 503, a second AlInP carrier confinement layer 504, an N-aliinp current spreading layer 505, and a corrosion-blocking layer 506 are sequentially stacked on the surface of the substrate.

The first conductive semiconductor layer 202 is a P-type semiconductor layer, and includes a first AlInP carrier confinement layer 502, the active layer 203 includes a multi-quantum well 503, and the second conductive semiconductor layer 204 includes a second AlInP carrier confinement layer 504.

In addition to the above-mentioned film layers, there are a GaP window layer 501, an N-AlGaInP current spreading layer 505, and a corrosion cut-off layer 506. The GaP window layer 501 is located between the substrate 201 and the first conductivity type semiconductor layer 202. The N-AlGaInP current spreading layer 505 and the corrosion cut layer 506 are sequentially stacked on the surface of the second conductivity type semiconductor layer 204.

Fig. 6 is a method for manufacturing a light emitting diode device according to an embodiment of the disclosure. Referring to fig. 6, the method includes:

601, bonding the light emitting diode chip with the substrate.

And 602, attaching a fluorescent sheet to the surface of the light-emitting diode chip, wherein the light-emitting diode chip and the fluorescent sheet are adsorbed together through magnetism.

603, manufacturing a retaining wall wrapping the side surface of the light emitting diode chip and the side surface of the fluorescent sheet on the substrate.

Fig. 7 is a schematic diagram of a method for manufacturing a light emitting diode device according to another embodiment of the disclosure. Referring to fig. 7, the method includes:

701, a light emitting diode chip is provided.

Illustratively, this step 701 may include:

and step 1, growing an epitaxial layer on the substrate.

In a first step, a substrate is provided.

The substrate 201 may be any one of a sapphire substrate, a Si substrate, a SiC substrate, and the like.

Illustratively, the substrate 201 may be a sapphire substrate.

And second, growing an epitaxial layer.

The epitaxial layer includes a first conductive type semiconductor layer 202, an active layer 203, and a second conductive type semiconductor layer 204 sequentially stacked on the surface of the substrate.

It should be noted that the film structure of the epitaxial layer may be added with other film structures on the basis of the film structure.

In one example, the first conductive type semiconductor layer 202 is an N type semiconductor layer, the active layer 203 includes a shallow well layer and an MQW light-emitting layer, and the second conductive type semiconductor layer 204 is a P type semiconductor layer.

Wherein the first conductive type semiconductor layer 202 includes an AlGaN buffer layer 401, a GaN three-dimensional layer 402, a GaN two-dimensional layer 403, and an n-GaN layer 404 sequentially stacked on the substrate 201.

The active layer 203 includes a first barrier layer 405, an InGaN/GaN shallow well layer 406, a second barrier layer 407, and an MQW light-emitting layer 408, which are sequentially stacked on the first conductivity type semiconductor layer 202.

The second conductive type semiconductor layer 204 includes a GaN low temperature P-type layer 409, a P-type AlGaN electron blocking layer 410, a P-type GaN layer 411, and a P-type contact layer 412 sequentially stacked on the active layer 203.

The above epitaxial layer was grown by metal organic vapor deposition ((Metal Organic Chemical Vapor DePosition, MOCVD) equipment, and the epitaxial structure after the growth was completed is shown in fig. 4.

In another example, the first conductive type semiconductor layer 202 is a P type semiconductor layer including a first AlInP carrier confinement layer 502, the active layer 203 includes a multi-quantum well 503, and the second conductive type semiconductor layer 204 is an N type semiconductor layer including a second AlInP carrier confinement layer 504. In addition to the above-described film structure, the epitaxial layer further includes a GaP window layer 501, an N-AlGaInP current spreading layer 505, and a corrosion-cut layer 506.

The epitaxial layer structure was grown by MOCVD equipment, and after the growth was completed, the epitaxial layer structure was shown in fig. 5.

And 2, etching the epitaxial layer to form the step-shaped structure.

First, a patterned photoresist layer is manufactured on the surface of the second conductive type semiconductor layer.

And secondly, etching the epitaxial layer.

And etching the epitaxial layer to remove the epitaxial layer which is not protected by the photoresist, so as to form the step-shaped structure. After the etching is completed, the photoresist is stripped.

And 3, manufacturing a conductive layer on the surface of the second semiconductor layer.

First, an ITO film is manufactured on the surface of the epitaxial layer.

In one example, the ITO film may be made by sputtering an ITO film.

In another example, the ITO thin film may be fabricated by means of ion beam evaporation.

And secondly, forming a patterned photoresist layer on the ITO film.

And thirdly, etching the ITO film.

And 4, manufacturing a first electrode on the surface of the first conductive semiconductor layer at the bottom of the step-shaped structure, and manufacturing a second electrode on the surface of the conductive layer.

And 5, manufacturing the DBR reflecting layer, and etching a pad preparation hole.

In one example, when fabricating the flip chip shown in fig. 2, it is necessary to fabricate the DBR reflective layer 208, and the DBR reflective layer 208 may be grown on the surface of the conductive layer 205 and the first conductive type semiconductor layer 202 of the light emitting diode chip by means of plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) or atomic layer deposition (Atomic Layer Deposition, ALD).

The pad-prepared hole 211 is formed on the DBR reflective layer by photolithography and etching techniques while obtaining the shape of the DBR reflective layer 208 shown in fig. 2.

In another example, in fabricating the front-mounted chip shown in fig. 3, step 5 is an alternative step, in which the DBR reflective layer 208 is not required to be fabricated, but the passivation layer 301 is fabricated, and the passivation layer 301 is fabricated by PECVD or ALD techniques.

After the passivation layer growth is completed, the pad preparation hole 211 is also required to be formed, and the shape of the passivation layer 301 shown in fig. 3 is obtained.

And 6, manufacturing a first electrode pad connected with the first electrode and a second electrode pad connected with the second electrode at the pad preparation hole.

702 bonding the led chip with the substrate.

In one example, where the chip is a flip chip as shown in fig. 2, step 702 includes:

under the condition that the temperature is higher than 280-290 ℃, the first electrode pad 209 and the second electrode pad 210 of the light-emitting diode chip 12 are connected with the metal welding spots on the substrate 11, so that the metal welding spots are melted, the temperature is reduced, and the first electrode pad 209 and the second electrode pad 210 and the metal welding spots on the substrate 11 form an integrated structure.

In one example, the substrate 11 may be an alumina substrate.

In another example, the substrate 11 may be a substrate formed of a bismaleimide triazine resin (Bismaleimide Triazine, BT), aluminum oxide, aluminum nitride, ceramic, metallic aluminum, or the like.

In another example, where the chip is a front-mounted chip or a vertical chip, step 702 includes:

the surface of the light emitting diode chip 12 having the substrate 201 is bonded to the substrate 11, and the electrodes of the light emitting diode chip 12 are electrically connected to the pads on the substrate 11 through metal leads.

703, manufacturing a magnetic layer on the surface of the prepared light-emitting diode chip.

In one example, the chip is a flip chip, see fig. 2, and step 703 includes:

by ion beam evaporation, a layer of magnetic material or a substance that can be magnetically adsorbed is evaporated on the surface of the substrate 201 away from the epitaxial layer, and then when the fluorescent sheet 14 is attached, the fluorescent sheet 14 is attached to the surface of the light emitting diode chip 12 away from the substrate 11.

The magnetic layer 200 is formed by the magnetic material or a substance that can be magnetically attracted so that the flip chip and the fluorescent sheet 14 are attracted together.

It should be noted that the magnetic layer 200 may be a Mn-doped magnetic ITO film covering the surface of the substrate 201, and the magnetic layer 200 may be a patterned layer of magnetically attractable material, such as iron, on the surface of the substrate 201.

In another example, the chip is the front-mounted chip shown in fig. 3, referring to fig. 3, step 703 includes:

and through a photoetching technology and an ion beam evaporation technology, a patterned positive magnetic medium is evaporated on the surface of the passivation layer 301, close to the electric surface, of the chip, wherein the magnetic medium can be a Mn-doped magnetic ITO film.

In another example, the chip is a vertical chip, and step 703 includes:

and (3) preparing a patterned Mn-doped magnetic ITO film on the surface of the film layer, which is contacted with the fluorescent sheet 14, of the vertical chip by a photoetching technology and an ion beam evaporation technology so as to form a magnetic layer 200.

704, manufacturing a fluorescent sheet, and magnetically attracting the fluorescent sheet and the light emitting diode.

In one example, fabricating a magnetic fluorescent sheet attached to a flip chip, step 704 includes:

mixing the high-temperature resistant magnetic material with fluorescent powder, glass powder or ceramic powder, and sintering at the temperature higher than 1700-1800 ℃ to form the glass fluorescent sheet or ceramic fluorescent sheet.

Illustratively, the magnetically attractable substance is also mixed with a phosphor, glass frit, or ceramic powder and sintered at a temperature greater than 1700 ℃ to form a glass phosphor sheet or ceramic phosphor sheet.

It should be noted that, when sintering the fluorescent sheet, the magnetic material tends to be demagnetized due to the higher temperature during sintering, and the magnetic material needs to be magnetized later.

In another example, a magnetic fluorescent sheet is fabricated to be attracted to a front-mounted chip, a vertical chip, step 704 comprising:

the same steps as above are different in that the magnetic fluorescent sheet attached to the front chip or the vertical chip needs to be provided with a through hole at a position corresponding to the electrode pad on the fluorescent sheet, so that the electrode pad passes through the through hole and is welded with the metal lead, and then is electrically connected with the welding spot on the substrate through the metal lead.

705, manufacturing a retaining wall surrounding the side surface of the light emitting diode and the side surface of the fluorescent plate.

In one example, step 705 includes:

glue is made around the led chip 12 and the fluorescent sheet 14 by a dispenser or other means, and the glue is heated to a first temperature in an oven to solidify the glue to form the retaining wall 13.

In one example, the colloid may be formed by mixing one or more of silica gel, epoxy resin, glass, polypropylene (PP), and the like.

Illustratively, the colloid is a colloid formed of a silica gel or an epoxy resin.

The first temperature may be, for example, 100-150 ℃.

The foregoing description of the preferred embodiments of the present disclosure is provided for the purpose of illustration only, and is not intended to limit the disclosure to the particular embodiments disclosed, but on the contrary, the intention is to cover all modifications, equivalents, alternatives, and alternatives falling within the spirit and principles of the disclosure.

Claims

1. A light emitting diode device, the light emitting diode device comprising: the light-emitting diode chip, the fluorescent sheet, the retaining wall and the substrate;

2. The light-emitting diode device according to claim 1, wherein the light-emitting diode chip is a blue light chip containing a magnetic material, the fluorescent sheet is a fluorescent sheet containing a magnetic material, and polarities of the magnetic materials in the light-emitting diode chip and the fluorescent sheet are opposite.

3. The light-emitting diode device according to claim 1, wherein the light-emitting diode chip is a blue light chip containing a substance that can be magnetically adsorbed, and the fluorescent sheet is a fluorescent sheet containing a magnetic material.

4. The light-emitting diode device according to claim 1, wherein the light-emitting diode chip is a blue light chip containing a magnetic material, and the fluorescent sheet is a fluorescent sheet containing a substance that can be magnetically adsorbed.

5. A light emitting diode device as claimed in any one of claims 2 to 4, wherein the magnetic material is a high temperature resistant magnetic material.

6. The light-emitting diode device according to any one of claims 1 to 4, wherein a surface of the barrier wall away from the substrate is flush with a surface of the fluorescent sheet away from the substrate.

7. The light-emitting diode device according to any one of claims 1 to 4, wherein the fluorescent sheet is a glass fluorescent sheet or a ceramic fluorescent sheet.

8. A method of fabricating a light emitting diode device, the method comprising:

bonding the light emitting diode chip with the substrate;

9. The method of claim 8, wherein the method further comprises:

10. The method according to claim 8 or 9, characterized in that the method further comprises: