CN110444562A - A kind of display panel and display device - Google Patents
A kind of display panel and display device Download PDFInfo
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- CN110444562A CN110444562A CN201910760750.1A CN201910760750A CN110444562A CN 110444562 A CN110444562 A CN 110444562A CN 201910760750 A CN201910760750 A CN 201910760750A CN 110444562 A CN110444562 A CN 110444562A
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- column structure
- display panel
- film layer
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Abstract
The invention discloses a kind of display panel and display device, display panel includes multiple luminescent devices, and each luminescent device includes plane film layer and the column structure for being raised in plane film layer；Backboard is driven, is provided on driving backboard and is covered with the one-to-one pad of luminescent device, pad by soft conductive structure, the column structure of luminescent device is inserted into soft conductive structure so that the metal electrode of package column structure is electrically connected with corresponding pad.According to the technical solution of the present invention, influence of the silicon wafer warpage to binding yield is greatly reduced, effectively prevents binding the problem of misplacing caused by driving backboard and luminescent device substrate thermal mismatching.
Description
Technical field
The present embodiments relate to field of display technology more particularly to a kind of display panel and display devices.
Background technique
Micro LED (Micro Light Emitting Diode, micro-led) is i.e. miniature by traditional LED
Change and matrixing, be known as next-generation display technology, Pixel Dimensions are in hundred micron dimensions hereinafter, having adopted as heir that LED is low in energy consumption, color
The advantages that saturation degree is high, reaction speed is fast, contrast is big, brightness ratio OLED (Organic Light Emitting Diode,
Organic Light Emitting Diode) it is 30 times high, and power consumption is only about LCD's (Liquid Crystal Display, liquid crystal display)
10%, it is the 50% of OLED.
Traditional binding technique is bonded the electrode of two sides using solder, but there are wafers for the epitaxial layer of luminescent device
The problem of warpage, influences the welding yield of two lateral electrodes, and there are thermal mismatchings with luminescent device substrate for driving backboard when binding
Problem leads to two sides malposition of electrode, further reduced binding yield.
Summary of the invention
The present invention provides a kind of display panel and display device, greatly reduces influence of the silicon wafer warpage to binding yield,
It effectively prevents binding the problem of misplacing caused by driving backboard and luminescent device substrate thermal mismatching.
In a first aspect, the embodiment of the invention provides a kind of display panels, comprising:
Multiple luminescent devices, each luminescent device include plane film layer and the column knot for being raised in the plane film layer
Structure；
Backboard is driven, is provided with and the one-to-one pad of the luminescent device, the pad quilt on the driving backboard
Soft conductive structure covering, the column structure of the luminescent device are inserted into the soft conductive structure so as to wrap up the column knot
The metal electrode of structure is electrically connected with the corresponding pad.
Further, the epitaxial layer of the luminescent device wraps up the column structure and the column structure is that N type is partly led
Body structure；Alternatively, the plane film layer of the luminescent device includes the epitaxial layer of the luminescent device and the column structure
For undoped semiconductor structure.
So that the light-emitting area of luminescent device increases, the light emission luminance of pixel is improved, weakens quantum confinement Roland Tasker
Effect reduces the dislocation density of luminescent device, improves the luminous efficiency of luminescent device, and it is good to binding to reduce silicon wafer warpage
The influence of rate effectively prevents the problem of heating in binding procedure leads to thermal mismatching and then binding is caused to misplace.
Further, the epitaxial layer of the luminescent device wraps up the column structure and the column structure is that N type is partly led
The plane film layer of body structure, the luminescent device includes mask layer, and multiple via holes, the column are provided on the mask layer
Shape structure is formed at the corresponding via hole.
The position of opening of mask layer is accurate, the position of column structure can be accurately positioned, and can be by adjusting mask layer
Opening diameter realizes the adjusting to luminescent device light-emitting area.
Further, the plane film layer of the luminescent device include the luminescent device epitaxial layer and the column
Structure is undoped semiconductor structure, and the epitaxial layer includes multiple patterned epitaxial structures, an epitaxial structure
On be provided at least one described column structure, an epitaxial structure and the column on epitaxial structure described in this
Shape structure constitutes a luminescent device.
So that each luminescent device individual reception anode signal, to realize the active matrix driving of luminescent device.
Further, it is provided with insulating layer on the driving backboard, the insulating layer corresponds to the luminescent device and is formed with
Multiple limit holes, are provided with the corresponding pad in the limit hole and be filled in the limit hole described soft leads
Electric structure.
Be conducive to play position-limiting action when binding luminescent device, realizing room temperature binding to avoid thermal mismatching without heating
On the basis of caused problem of misalignment, the problem of misalignment of metal electrode and pad is further improved.
Further, filled with uv-curable glue in the gap after the luminescent device is bonded with the driving backboard.
For fixed bonding luminescent device and driving backboard, avoid heating leads to thermal mismatching and then causes uv-curable glue
The problem of luminescent device misplaces with corresponding pad.
Further, the display panel further include:
Multiple catoptric arrangements, along the direction for being parallel to the display panel, the catoptric arrangement is around the corresponding hair
The epitaxial layer of optical device is arranged.
Catoptric arrangement can reflect the light that luminescent device emits to two sides to be used to show, and then improve luminescent device
Luminous efficiency.
Further, the column structure of the luminescent device is located at one that the plane film layer closes on the driving backboard
Side, the metal electrode of the luminescent device are electrically connected with the corresponding pad；
The display panel further includes the cathode layer positioned at the luminescent device far from the driving backboard side, the hair
The plane film layer of optical device includes planar N-type semiconductor layer, and the planar N-type semiconductor layer is remote in the plane film layer
Film layer from the column structure, the planar N-type semiconductor layer are electrically connected with the cathode layer；
Preferably, the planar N-type semiconductor layer has etched features far from the surface of the column structure.
Luminescent device receives corresponding anode signal and cathode signal, active matrix driving is realized, to reduce light in plane N
The total reflection degree on surface of the type semiconductor layer far from column structure, improves the light extraction efficiency of luminescent device.
Further, the column structure is parallel with the column structure along the height perpendicular to plane film layer direction
It is more than or equal to 2 in the ratio of the maximum gauge of plane film layer direction cross section.
Be conducive to increase column structure along the height perpendicular to plane film layer direction, increase column structure and soft conduction is tied
The surplus of the part of structure contact, influence of the reduction silicon wafer warpage to binding yield is smaller, to further increase luminescent device and drive
The binding yield of dynamic backboard.
Second aspect, the embodiment of the invention also provides a kind of display devices, including display surface as described in relation to the first aspect
Plate.
The embodiment of the invention provides a kind of display panel and display device, display panel includes multiple luminescent devices and drive
Dynamic backboard, it includes plane film layer and the column structure for being raised in plane film layer that each luminescent device, which is arranged, drives and is arranged on backboard
Have and covered with the one-to-one pad of luminescent device, pad by soft conductive structure, the column structure insertion of luminescent device is soft
Conductive structure so that include column structure metal electrode be electrically connected with corresponding pad, greatly reduce silicon wafer warpage to binding
The influence of yield effectively prevents binding the problem of misplacing caused by driving backboard and luminescent device substrate thermal mismatching.
Detailed description of the invention
By reading a detailed description of non-restrictive embodiments in the light of the attached drawings below, the application's is other
Feature, objects and advantages will become more apparent upon:
Fig. 1 is a kind of the schematic diagram of the section structure of display panel provided in an embodiment of the present invention；
Fig. 2 is a kind of the schematic diagram of the section structure of luminescent device provided in an embodiment of the present invention；
Fig. 3 is the schematic diagram of the section structure of prior art display panel；
Fig. 4 is the schematic diagram of the section structure of another luminescent device provided in an embodiment of the present invention；
Fig. 5 is the schematic diagram of the section structure of another display panel provided in an embodiment of the present invention；
Fig. 6 is the schematic diagram of the section structure of another luminescent device provided in an embodiment of the present invention；
Fig. 7 is the schematic diagram of the section structure of another display panel provided in an embodiment of the present invention；
Fig. 8 is the schematic diagram of the section structure of another display panel provided in an embodiment of the present invention；
Fig. 9 is the schematic diagram of the section structure of another display panel provided in an embodiment of the present invention；
Figure 10 is a kind of structural schematic diagram of display device provided in an embodiment of the present invention.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.It is same or similar in this specification
Drawing reference numeral represent the same or similar structure, element or process.It should be noted that in the absence of conflict, this Shen
Please in embodiment and embodiment in feature can be combined with each other.
Fig. 1 is a kind of the schematic diagram of the section structure of display panel provided in an embodiment of the present invention, and Fig. 2 is the embodiment of the present invention
A kind of the schematic diagram of the section structure of the luminescent device provided.Display panel includes multiple luminescent devices 1 combined with Figure 1 and Figure 2, often
A luminescent device 1 includes plane film layer 2 and the column structure 3 for being raised in plane film layer 2, and display panel further includes driving backboard 4,
It is provided on driving backboard 4 and is covered with the one-to-one pad 5 of luminescent device 1, pad 5 by soft conductive structure 6, luminescent device
1 column structure 3 is inserted into soft conductive structure 6 so that the metal electrode 7 of package column structure 3 is electrically connected with corresponding pad 5.
Illustratively, luminescent device 1 can be Micro LED, and soft conductive structure 6 can be soft and electric conductivity
Good metal, such as can be made of metal materials such as In, Ag, Sn, Al, the column structure 3 of luminescent device 1 can be solid
Structure, or hollow structure, the column structure 3 that luminescent device 1 is illustratively arranged here is solid construction.Specifically,
The position that pad 5 can be first provided on driving backboard 4 combined with Figure 1 and Figure 2, covers soft conductive structure 6, and is arranged and shines
Device 1 is initially formed on a temporary substrates 40, and when binding luminescent device 1, the column structure 3 of 1 protrusion of luminescent device is inserted into
Soft conductive structure 6, column structure 3 are wrapped with metal electrode 7, so realize the metal electrode 7 of package column structure 3 with
The electrical connection of pad 5 is corresponded on driving backboard 4, to realize transmission of the driving backboard 4 to 1 corresponding signal of luminescent device, completes to tie up
Temporary substrates 40 are removed again after fixed.
Currently used binding technique is generally coated with lower melting-point solder on chip electrode and electrode of substrate,
Two sides electrode alignment is bonded, heating chip and substrate makes two sides solder melt fusion, then cooling down makes solder solidification reach welding
Purpose laterally extended out there are solder and in turn result in electrode and pass through short-circuited with solder, solder and electrode but during bonding
Contact area not enough leads to the problem of not prison welding.In addition, as shown in figure 3, the epitaxial layer of Micro LED there are silicon wafer warpage,
The small region two sides the a1 solder of warpage is fused when para-linkage, but big two lateral electrode of region a2 of warpage does not contact yet, shadow
Ring binding yield.In addition, heating process when binding will lead to driving backboard 4 and temporary substrates 40 have thermal mismatching,
I.e. heating leads to that backboard 4 and temporary substrates 40 is driven to generate different degrees of deformation, and then the electrode for causing two sides to be bound is wrong
Position, further reduced binding yield.
Specifically, each luminescent device 1 includes plane film layer 2 and the column for being raised in plane film layer 2 combined with Figure 1 and Figure 2,
Structure 3 drives and is provided with and is covered with the one-to-one pad 5 of luminescent device 1, pad 5 by soft conductive structure 6 on backboard 4, sends out
The column structure 3 of optical device 1 is inserted into soft conductive structure 6 so as to include metal electrode 7 and the corresponding pad 5 of column structure 3
Electrical connection, the column structure 3 of such luminescent device 1 is by being inserted into the soft realization of conductive structure 6 and the binding of corresponding pad 5, i.e.,
Making the epitaxial layer 8 of luminescent device 1, there are silicon wafer warpages, and metal electrode 7 to be caused to be detached from corresponding pad 5, wraps up column structure
3 metal electrode 7 remains to be electrically connected by soft conductive structure 6 with corresponding pad 5, greatly reduces silicon wafer warpage to binding
The influence of yield, and the column structure 3 of luminescent device 1 by be inserted into soft conductive structure 6 can be realized it is normal with corresponding pad 5
Temperature binding effectively prevents the problem of heating in binding procedure leads to thermal mismatching and then binding is caused to misplace without heating.
Optionally, the epitaxial layer 8 of luminescent device 1 can wrap up column structure 3 combined with Figure 1 and Figure 2, and column structure 3 can be with
For N-type semiconductor structure.Specifically, column structure 3 can be for example the GaN structure of N-type, luminescent device 1 combined with Figure 1 and Figure 2,
Epitaxial layer 8 for example may include multiple quantum well layer 81, electronic barrier layer 82 and p type semiconductor layer 83, p type semiconductor layer 83
It such as can be the GaN layer of p-type.When the anode of luminescent device 1, i.e., when metal electrode 7 receives corresponding signal with cathode, column
Electronics in the structure 3 and hole in p type semiconductor layer 83 is compound in multiple quantum well layer 81 so that luminescent device 1 shines, shines
The top surface and side of device 1 shine.
Currently used Micro LED structure is mostly two-dimension plane structure, i.e., only includes plane in luminescent device
Film layer 2, in order to realize higher resolution ratio, luminescent device needs to narrow down to nanoscale, at this time the luminescent device of two-dimensional structure
Light-emitting area is smaller, and the light emission luminance of pixel will be greatly reduced, and the light-emitting surface of the luminescent device of two-dimensional structure is polar surface, is led
There are quantum confinement Roland Tasker effects for electroluminescence device, i.e., under the action of electric field, electronics in quantum well layer and with hole
The spatial distribution of wave function changes with overlapping situation, causes the energy of band-to-band transition and transition probability to change, due to potential barrier
Restriction effect, even if the two dimension exciton in quantum well layer does not ionize still under the action of higher longitudinal electric field, influence
The luminous efficiency of luminescent device.In addition, the temporary substrates for being used to form luminescent device can be Sapphire Substrate, luminescent device
The lattice arrangement of epitaxial layer and Sapphire Substrate differs greatly, and epitaxial layer and the temporary substrates of the luminescent device of two-dimensional structure have
Biggish contact area, therefore the luminescent device of two-dimensional structure has biggish dislocation density, the same hair for influencing luminescent device
Light efficiency.
Specifically, column structure 3, column structure 3 are wrapped up by the epitaxial layer 8 of setting luminescent device 1 combined with Figure 1 and Figure 2,
For N-type semiconductor structure, i.e., the column structure 3 of setting luminescent device 1 is for shining, so that luminescent device 1 forms three-dimensional structure
Luminescent device 1, the setting of column structure 3 improves the light emission luminance of pixel so that the light-emitting area of luminescent device 1 increases,
And the light-emitting surface for being provided with the luminescent device 1 of column structure 3 is non-polar plane and semi-polar side, weakens quantum confinement
Roland Tasker effect improves the luminous efficiency of luminescent device 1.In addition, the setting of column structure 3 substantially reduces luminescent device 1
Epitaxial layer 8 and temporary substrates 40 contact area, reduce the dislocation density of luminescent device 1, further improve photophore
The luminous efficiency of part 1.
Optionally, the epitaxial layer 8 of luminescent device 1 can wrap up column structure 3 combined with Figure 1 and Figure 2, and column structure 3 can be with
For N-type semiconductor structure, the plane film layer 2 that luminescent device 1 can be set includes mask layer 9, is provided with multiple mistakes on mask layer 9
Hole 10, column structure 3 are formed at corresponding via hole 10.Specifically, the material for constituting mask layer 9 combined with Figure 1 and Figure 2, can be with
It is SiO2, can first flood form the mask layer 9 of flood, the position that column structure 3 is needed to form on mask layer 9 etched
Hole 10, corresponding each via hole 10 grows GaN nano column array on entire display panel, as shown in figure 4, GaN nano-pillar is
The position of opening of column structure 3, such mask layer 9 is easy to control, and position of opening is accurate, and the position of column structure 3 can be accurately positioned
It sets so that column structure 3 is formed in the center of luminescent device 1, and the opening diameter of mask layer 9 directly determines column structure 3
Diameter, can by adjust mask layer 9 opening diameter adjust column structure 3 diameter, with realize to luminescent device 1 shine
The adjusting of area.
Optionally, in conjunction with Fig. 1, Fig. 2 and Fig. 4, settable column structure 3 is along the height d1 perpendicular to 2 direction of plane film layer
The ratio for being parallel to the maximum gauge d2 of 2 direction cross section of plane film layer with column structure 3 is more than or equal to 2.Specifically, in conjunction with figure
1 to Fig. 4, setting column structure 3 is parallel to 2 side of plane film layer with column structure 3 along the height d1 perpendicular to 2 direction of plane film layer
It is more than or equal to 2 to the ratio of the maximum gauge d2 of cross section, for the maximum gauge d2 for being parallel to 2 direction cross section of plane film layer
Identical column structure 3 is conducive to increase column structure 3 along the height d1 perpendicular to 2 direction of plane film layer, 3 edge of column structure
It is bigger perpendicular to the height d1 in 2 direction of plane film layer, when luminescent device 1 and driving backboard 4 are bound, what column structure 3 provided
The surplus of the part contacted with soft conductive structure 6 is also bigger, and influence of the silicon wafer warpage to binding yield is smaller, with further
It improves luminescent device 1 and drives the binding yield of backboard 4.In addition, the epitaxial layer 8 of luminescent device 1 wraps up column structure 3, column
Structure 3 is bigger along the height d1 perpendicular to 2 direction of plane film layer, and the area of the epitaxial layer 8 of luminescent device 1 is also bigger, volume
The area of sub- well layer 81 is also bigger, is conducive to the light-emitting area for increasing luminescent device, and then improve the luminance of luminescent device 1
Degree.
Illustratively, in conjunction with Fig. 1, Fig. 2 and Fig. 4, the hexagonal prisms that column structure 3 is six terrace with edge of top band can be set, i.e.,
The top surface of column structure 3 is the platform of regular hexagon, and cross section everywhere is regular hexagon, then column structure 3 is parallel to flat
The maximum gauge d2 of 2 direction cross section of face mask layer is the straight of the cross section for the outer portion that column structure 3 removes six terrace with edge parts
Diameter, i.e. the maximum diagonal length of regular hexagon.It should be noted that tool of the embodiment of the present invention to 3 cross section of column structure
Shape is not construed as limiting.
Fig. 5 is the schematic diagram of the section structure of another display panel provided in an embodiment of the present invention, and Fig. 6 is that the present invention is implemented
The schematic diagram of the section structure for another luminescent device that example provides.Unlike structure shown in Fig. 1 and Fig. 2, Fig. 5 and Fig. 6 institute
In the structure shown, the plane film layer 2 of luminescent device 1 includes the epitaxial layer 8 of luminescent device 1, and column structure 3 is undoped half
Conductor structure.
Specifically, in conjunction with Fig. 5 and Fig. 6, the epitaxial layer 8 of light emitting structure may include being sequentially formed at putting down on temporary substrates
Face n type semiconductor layer 15, such as N-type GaN layer, multiple quantum well layer 81, p type semiconductor layer 83, such as the GaN layer of p-type shine
The epitaxial layer 8 of structure is planar structure, when the anode of luminescent device 1 receives corresponding signal with cathode, plane film layer 2
In planar N-type semiconductor layer 15 in electronics and p type semiconductor layer 83 in hole it is compound in multiple quantum well layer 81 so that
Luminescent device 1 shines, and column structure 3 is undoped semiconductor layer, i.e., column structure 3 and is not involved in the hair of luminescent device 1
Light.In addition, the plane film layer 2 of luminescent device 1 further includes metal layer 84, such as ITO layer, metal layer 84 connects with 7 electricity of metal electrode
Common transport anode signal is touched, plane film layer 2 further includes the insulating layer 85 of wrapping portion metal electrode 7 and epitaxial layer 8.
In conjunction with Fig. 5 and Fig. 6, the setting of column structure 3 enables luminescent device 1 soft by the way that column structure 3 to be inserted into
Conductive structure 6 realize with the binding of corresponding pad 5, even if there are silicon wafer warpages to lead to metal electrode for the epitaxial layer 8 of luminescent device 1
7 are detached from corresponding pad 5, and the metal electrode 7 of package column structure 3 is remained to through soft conductive structure 6 and corresponding pad
5 electrical connections greatly reduce influence of the silicon wafer warpage to binding yield, and the column structure 3 of luminescent device 1 is soft by being inserted into
Conductive structure 6 can be realized to be bound with the room temperature of corresponding pad 5, and without heating, effectively preventing heating in binding procedure causes
The problem of thermal mismatching causes binding to misplace in turn.
Optionally, in conjunction with Fig. 5 and Fig. 6, the plane film layer 2 of luminescent device 1 includes the epitaxial layer 8 of luminescent device 1, column knot
Structure 3 is undoped semiconductor structure, and the epitaxial layer 8 of luminescent device 1 includes multiple patterned epitaxial structures 80, an extension
At least one column structure 3, an epitaxial structure 80 and the column knot on the epitaxial structure 80 are provided in structure 80
Structure 3 constitutes a luminescent device 1, and Fig. 5 and Fig. 6, which are illustratively arranged on an epitaxial structure 80, is provided with a column structure
3, then an epitaxial structure 80 constitutes a luminescent device 1 with a column structure 3 being set on the epitaxial structure 80.
Specifically, in conjunction with Fig. 5 and Fig. 6, the plane film layer 2 of luminescent device 1 may include connecting above-mentioned package column structure 3
Metal electrode 7 metal layer 84, such as ITO layer, the plane film layer 2 of luminescent device 1 further include that the p-type of luminescent device 1 is partly led
Body layer 183, luminescent device 1 pattern epitaxial layer 8 to form multiple patterned epitaxial structures 80, so that p type semiconductor layer
183 and the metal layer 84 of metal electrode 7 of the above-mentioned package column structure 3 of connection disconnected according to luminescent device 1, avoid
The structure short circuit of anode signal is transmitted between different luminescent devices 1, so that 1 individual reception anode signal of each luminescent device, with
Just the active matrix driving of luminescent device 1 is realized.
Fig. 7 is the schematic diagram of the section structure of another display panel provided in an embodiment of the present invention.With shown in Fig. 5 and Fig. 6
Unlike structure, in the display panel of structure shown in Fig. 7, multiple column structures 3 are provided on an epitaxial structure 80, such as
Setting on an epitaxial structure 80 is arranged, and there are three column structures 3, then there is the metal electrode 7 of three column structures 3 of package, phase
For an only column structure 3 on one epitaxial structure 80 of setting, a luminescent device 1 and soft conductive structure 6 are increased
Contact area, improve the stability that metal electrode 7 is electrically connected with corresponding pad 5, further improve luminescent device 1 with
Drive the binding yield of backboard 4.
Optionally, it in conjunction with Fig. 1, Fig. 2 and Fig. 4 to Fig. 7, drives and is provided with insulating layer 11 on backboard 4, insulating layer 11 is corresponding
Luminescent device 1 forms multiple limit hole b, and corresponding pad 5 is provided in limit hole b and is filled in soft in limit hole b
Conductive structure 6.
Specifically, knot Fig. 1, Fig. 2 and Fig. 4 to Fig. 7, the material for constituting insulating layer 11 can be SiO2, it is also possible to light
Photoresist, preferably photoresist constitute insulating layer 11, using SiO2Insulating layer 11, which may result in insulating layer 11, can not do too thick, can also
It is cracked in insulating layer 11, insulating layer 11 is too thin or insulating layer 11 in be likely to lead to correspond to adjacent hair there are crack
6 short circuit of soft conductive structure of optical device 1, and then the structure for causing adjacent luminescent device 1 to be used for transmission anode signal is short-circuit, shadow
Display panel is rung normally to show.In addition, the limit hole b that insulating layer 11 is formed is also beneficial to play limit when binding luminescent device 1
Position effect further improves on the basis of realizing room temperature binding without heating to avoid problem of misalignment caused by thermal mismatching
The problem of misalignment of metal electrode 7 and pad 5.Illustratively, the limit hole that insulating layer is formed can be reverse frustoconic hole, inverted trapezoidal
Three-dimensional structures, the embodiment of the present invention such as shape hole, the shape of falling triangular platform hole, the shape of falling hexagonal pyramid hole are not construed as limiting this.
Fig. 8 is the schematic diagram of the section structure of another display panel provided in an embodiment of the present invention.With structure shown in Fig. 5
Unlike display panel, the soft of multiple elliposoidals is provided on the display panel setting driving backboard 4 of structure shown in Fig. 8 and is led
Electric structure 6.Specifically, as shown in figure 8, soft conductive material, example first can be wrapped up on the pad 5 of driving backboard 4
As soft metal material forms the soft conductive structure 6 of elliposoidal, hair after annealing under the action of surface tension
The column structure 3 of optical device 1 is inserted into soft conductive structure 6, and the metal electrode 7 of package column structure 3 passes through soft conductive structure
6 are electrically connected with corresponding pad 5, and without in addition making insulating layer to form limit hole, manufacture craft is simple, and is equally able to achieve
The room temperature of luminescent device 1 and driving backboard 4 is bound.In addition, the display panel of structure shown in Fig. 1 equally can be in driving backboard 4
The soft conductive structure 6 of the upper multiple elliposoidals of setting, without making insulating layer in addition to form limit hole, which is not described herein again.
In addition, it is elliposoidal that soft conductive structure 6, which is illustratively arranged, in Fig. 8, the concrete shape of soft conductive structure 6 is dependent on composition
The surface tension of the material of soft conductive structure 6, the embodiment of the present invention are not construed as limiting the concrete shape of soft conductive structure 6.
Optionally, in conjunction with Fig. 5 to Fig. 8, settable column structure 3 is along the height d1 and column perpendicular to 2 direction of plane film layer
The ratio that shape structure 3 is parallel to the maximum gauge d2 of 2 direction cross section of plane film layer is more than or equal to 2.Specifically, extremely in conjunction with Fig. 3
Fig. 8, setting column structure 3 are parallel to 2 direction of plane film layer with column structure 3 along the height d1 perpendicular to 2 direction of plane film layer
The ratio of the maximum gauge d2 of cross section is more than or equal to 2, for the maximum gauge d2 phase for being parallel to 2 direction cross section of plane film layer
Same column structure 3 is conducive to increase column structure 3 along the height d1 perpendicular to 2 direction of plane film layer, and column structure 3 is along vertical
Height d1 directly in 2 direction of plane film layer is bigger, luminescent device 1 and driving backboard 4 bind when, column structure 3 provide with
The surplus for the part that soft conductive structure 6 contacts is also bigger, and influence of the silicon wafer warpage to binding yield is smaller, further to mention
The binding yield of high luminescent device 1 and driving backboard 4.
Optionally, in conjunction with Fig. 1, Fig. 2 and Fig. 4 to Fig. 8, luminescent device 1 be bonded with driving backboard 4 after gap in may be used also
To be filled with uv-curable glue 12.Specifically, in conjunction with Fig. 1, Fig. 2 and Fig. 4 to Fig. 8, luminescent device 1 with driving 4 key of backboard
After conjunction, it can use capillarity and fill ultraviolet glue in the gap after luminescent device 1 is bonded with driving backboard 4, and with ultraviolet
Light irradiation makes ultraviolet adhesive curing, and uv-curable glue 12 is for fixed bonding luminescent device 1 and driving backboard 4.It is traditional can also be with
Similar colloform texture is set using the mode of heating, but heating also results in the temporary substrates 40 for being provided with luminescent device 1
And there is thermal mismatching in driving backboard 4, setting luminescent device 1 be bonded with driving backboard 4 after gap in fill it is ultraviolet
Solidification glue 12 avoids the problem of heating leads to thermal mismatching and then luminescent device 1 is caused to misplace with corresponding pad 5.
Optionally, in conjunction with Fig. 1, Fig. 2 and Fig. 4 to Fig. 8, display panel can also include multiple catoptric arrangements 13, along flat
Row is arranged in the direction of display panel, catoptric arrangement 13 around the epitaxial layer 8 of corresponding luminescent device 1.Specifically, in conjunction with Fig. 1
And Fig. 2, each catoptric arrangement 13 can be formed on the side wall of the limit hole b of the formation of insulating layer 11, the extension of luminescent device 1
Layer 8 wraps up column structure 3, and column structure 3 is located in limit hole b, therefore catoptric arrangement 13 can surround corresponding luminescent device
1 epitaxial layer 8 is arranged, and luminescent device 1 is reflected to the light of limit hole b side wall light emission to be used to show, and then improve hair
The luminous efficiency of optical device 1.In addition, each catoptric arrangement 13 can wrap up the flat of corresponding luminescent device 1 in conjunction with Fig. 4 to Fig. 8
Face mask layer 2 is arranged, i.e., catoptric arrangement 13 is set to the surrounding of plane film layer 2 and lower surface in Fig. 5 and Fig. 8 and exposes column knot
Structure 3, the plane film layer 2 of luminescent device 1 include the epitaxial layer 8 of luminescent device 1, i.e. catoptric arrangement 13 can surround corresponding hair
The epitaxial layer 8 of optical device 1 is arranged, and the plane film layer 2 of luminescent device 1 realizes light-emitting function, likewise, catoptric arrangement 13 can incite somebody to action
The light reflection that luminescent device 1 emits to two sides improves the luminous efficiency of luminescent device 1 to be used to show.Illustratively,
Catoptric arrangement 13 can be metallic diaphragm, be also possible to DBR (Distributed Bragg Reflection layer) or ODR (comprehensive reflection
Mirror), the luminous efficiency of luminescent device 1 can be improved.
Optionally, in conjunction with Fig. 1, Fig. 2 and Fig. 4 to Fig. 8, the column structure 3 of luminescent device 1, which is located at plane film layer 2, to be closed on
The side of backboard 4 is driven, the metal electrode 7 of luminescent device 1 is electrically connected with corresponding pad 5, and display panel further includes being located at hair
Cathode layer 14 of the optical device 1 far from driving 4 side of backboard, the plane film layer 2 of luminescent device 1 include planar N-type semiconductor layer 15,
Planar N-type semiconductor layer 15 is the film layer in plane film layer 2 far from column structure 3, planar N-type semiconductor layer 15 and cathode layer 14
Electrical connection.
Specifically, the outermost of column structure 3 is enclosed with metal electrode 7, such as ITO electrode combined with Figure 1 and Figure 2, and
It is not provided with metal structure in the plane film layer 2 of luminescent device 1, so that the metal electrode 7 between adjacent luminescent device 1 is mutual
It disconnects, driving includes multiple pixel-driving circuits in backboard 4, and each pad 5 is electrically connected with a pixel-driving circuit, is shone
After device 1 and driving backboard 4 are bound, metal electrode 7 serves as the anode of luminescent device 1, and it is logical to receive corresponding pixel-driving circuit
Cross the anode signal of the transmission of pad 5.In addition, the plane film layer 2 of luminescent device 1 further includes mask layer 9 and is located at mask layer 9 far
Planar N-type semiconductor layer 15 from 3 side of column structure, such as planar N-type GaN layer, since planar N-type semiconductor layer 15 does not have to
In shining, therefore it be the n type semiconductor layer being lightly doped that planar N-type semiconductor layer 15, which can be set, and doping concentration is less than composition
The doping concentration of the n type semiconductor layer of column structure 3.Planar N-type semiconductor layer 15 passes through the via hole 10 and column through mask layer 9
Shape structure 3 is electrically connected, and the planar N-type semiconductor layer 15 of setting luminescent device 1 is electrically connected with cathode layer 14, so that all hairs
The cathode of optical device 1 forms common layer, and the n type semiconductor layer of each luminescent device 1 receives the cathode signal that cathode layer 14 transmits,
Luminescent device 1 receives corresponding anode signal and cathode signal in this way, realizes active matrix driving.
Specifically, in conjunction with Fig. 4 to Fig. 8, the outermost of column structure 3 is enclosed with metal electrode 7, such as ITO electrode, hair
The plane film layer 2 of optical device 1 includes the epitaxial layer 8 of luminescent device 1, and the epitaxial layer 8 of luminescent device 1 makes package each after patterning
The metal electrode 7 of a column structure 3 mutually disconnects, and metal electrode 7 is again provided in the plane film layer 2 of luminescent device 1,
Such as ITO electrode, but also the metal electrode 7 in plane film layer 2 mutually disconnects after the epitaxial layer 8 of luminescent device 1 patterns, packet
The metal electrode 7 for wrapping up in column structure 3 is electrically connected the anode for collectively acting as luminescent device 1 with the metal layer 85 in plane film layer 2, hair
After optical device 1 and driving backboard 4 are bound, wraps up the metal electrode 7 of column structure 3 and the metal electrode 7 in plane film layer 2 receives
Corresponding pixel-driving circuit passes through the anode signal that pad 5 transmits.In addition, the plane film layer 2 of luminescent device 1 further includes plane
N type semiconductor layer 15, planar N-type semiconductor layer 15 form the epitaxial layer 8 of luminescent device 1, for shining for luminescent device 1, if
The planar N-type semiconductor layer 15 for setting luminescent device 1 is electrically connected with cathode layer 14, so that the cathode of all luminescent devices 1 is formed
Common layer, the planar N-type semiconductor layer 15 of each luminescent device 1 receive the cathode signal that cathode layer 14 transmits, such photophore
Part 1 receives corresponding anode signal and cathode signal, realizes active matrix driving.
Optionally, in conjunction with Fig. 1, Fig. 2 and Fig. 4 to Fig. 8, planar N-type semiconductor layer 15 can be set far from column structure
3 surface have etched features, here only Fig. 5 and Fig. 8 illustratively diagrammatic plan N type semiconductor layer 15 far from column structure 3
Surface there are etched features, planar N-type semiconductor layer 15 equally can be set far from column in the display panel of structure shown in Fig. 1
The surface of structure 3 has etched features.
Specifically, in conjunction with Fig. 1, Fig. 2 and Fig. 4 to Fig. 8, planar N-type semiconductor layer 15 is the plane film layer of luminescent device 1
Far from the film layer of column structure 3 in 2, and the planar structure of luminescent device 1 is located at side of the column structure 3 far from driving backboard 4,
I.e. planar N-type semiconductor layer 15 is the film layer for being located at 1 the top of luminescent device along the light emission direction of luminescent device 1, and plane N is arranged
Type semiconductor layer 15 has etched features far from the surface of column structure 3, i.e., partly leads to the planar N-type after removing temporary substrates 40
Body layer 15 is roughened far from the surface of column structure 3, such as can add dry etching will using wet etching method or photoetching
Planar N-type semiconductor layer 15 is corroded far from the surface of column structure 3 to reduce planar N-type semiconductor layer 15 far from column knot
The smooth degree on the surface of structure 3, such as can surface corrosion Cheng Chengzhou by planar N-type semiconductor layer 15 far from column structure 3
The figure of phase property arrangement, to reduce light in the total reflection degree on surface of the planar N-type semiconductor layer 15 far from column structure 3,
Improve the light extraction efficiency of luminescent device 1.
Optionally, in conjunction with Fig. 1, Fig. 2 and Fig. 4 to Fig. 8, the light emitting functional layer that luminescent device 1 can be set includes volume
Sub- well layer 81, composition 81 material of multiple quantum well layer is identical, and display panel further includes color membrane substrates 17, and color membrane substrates 17, which are located at, to shine
Side of the device 1 far from driving backboard 4, color membrane substrates 17 include multiple color blocking units 18, color blocking unit 18 and luminescent device 1 one
One is correspondingly arranged.
Specifically, in conjunction with Fig. 1, Fig. 2 and Fig. 4 to Fig. 8, the light emitting functional layer of all luminescent devices 1, i.e. multiple quantum well layer
81 are collectively formed to simplify manufacture craft, so that the material for constituting the multiple quantum well layer 81 of all luminescent devices 1 is identical, structure
Determine the luminescent color of corresponding luminescent device 1 again at the material of multiple quantum well layer 81, therefore all luminescent devices 1 is luminous
Color is identical, and setting display panel further includes color membrane substrates 17, and color membrane substrates 17 are located at luminescent device 1 far from driving backboard 4
Side, such as black matrix 19 can be made above cathode layer 14, the corresponding luminescent device 1 of black matrix 19 is arranged, as blocking amount
The dykes and dams of son point ink.
Color membrane substrates 17 include multiple color blocking units 18, and color blocking unit 18 is arranged in a one-to-one correspondence with luminescent device 1, such as can
The multiple quantum well layer 81 of all luminescent devices 1 is arranged as blue multiple quantum well layer, then can be set corresponding in color membrane substrates 17
One pixel includes three color blocking units 18, can by the way of printing quantum dot, by three color blocking units 18 wherein
Red quantum dot ink and green quantum dot ink are printed in two color blocking units 18 respectively, is not set in another color blocking unit 18
Quantum dot is set, such as setting color blocking unit 181 is not provided with quantum dot, color blocking unit 182 is printed with red quantum dot ink, color blocking
Unit 183 is printed with green quantum dot ink, such 181 blue light-emitting of color blocking unit, and color blocking unit 182 glows, color blocking unit
183 green lights, display panel realize that colorization is shown, may finally cover transparent cover plate 20 in display panel panel the top,
Black matrix 19 in color membrane substrates 17 plays the role of supporting transparent cover plate 20.
Illustratively, for the display panel of the structure shown in Fig. 5, can also directly the covering of the top of cathode layer 14
The transparent cover plate 20 of coated good corresponding color quantum dot, as shown in figure 9, equally can be realized the colorization of display panel.
Illustratively, in conjunction with Fig. 1, Fig. 2 and Fig. 4 to Fig. 9, the plane film layer structure of luminescent device can also be in rotary table
Shape, prismatic table shape, cuboid or square bodily form etc., the embodiment of the present invention is not construed as limiting this.
Specifically, in conjunction with Fig. 1, Fig. 2 and Fig. 4, the manufacturing process of the display panel of structure shown in Fig. 1 includes:
S1, the GaN layer being lightly doped, i.e. planar N-type semiconductor layer 15 are grown on temporary substrates 40.
S2, SiO is deposited on planar N-type semiconductor layer 152Mask layer 9.
S3, in SiO2Photoresist is coated on mask layer 9, using mask blank, technique through exposure and development, then through BOE
(HF acid and NH4The mixed solution of F) solution corrosion, it finally removes photoresist, forms poroid array structure, expose the GaN layer being lightly doped,
That is planar N-type semiconductor layer 15,10 diameter of hole are 50nm~5 μm.
S4, blue light GaN nanometer stick array structure is grown in tapping, it is highly 1 μm~10 μ that diameter, which is 100nm~5 μm,
m。
S5, ITO, i.e. metal electricity are formed in the epitaxial layer 8 of nanometer stick array surface depositing light-emitting device 1 and in most surface
Pole 7, so far, the machined completion of GaN nanometer rods epitaxial structure.
S6, production driving backboard 4, the diameter of pad 5 are less than the diameter of nanometer rods, and 5 center of pad is away from equal to nanometer rods
Center is away from array distribution.
S7, one layer of SiO is deposited on driving backboard 42Insulating layer, thickness are less than or equal to nanometer rods, the i.e. height of column structure 3
Degree.
S8, through photoetching and etching process, in SiO2Inverted round stage hole is opened on insulating layer, exposes bottom electrode, and rotary table bottom is straight
Diameter is greater than the diameter of nanometer rods.
S9, in hole side wall deposition metallic reflector 13.
S10, fill that hardness is high and metal with good conductivity, including but not limited to In, Ag, Sn etc. in hole, so far,
Backboard completes the process.
S11, para-linkage is carried out, made in GaN nanometer rods insertion truncated cone-shaped hole.
S12, using capillarity, transparent ultraviolet glue is filled in gap after bonding, and made with ultraviolet light irradiation ultraviolet
Adhesive curing.
S13, laser lift-off temporary substrates 40.
S14, the surface after removing deposit one layer of common transparent electrode, i.e. cathode layer 14.
S15, production color membrane substrates 17.
Specifically, in conjunction with Fig. 5 and Fig. 6, the manufacturing process of the display panel of structure shown in Fig. 5 includes:
S1, luminescent device 1 epitaxial structure 8 outside metal-organic chemical vapor deposition equipment (MOCVD) or hydrite vapor phase
Prolong in-situ deposition in (HVPE), comprising the following steps:
High-temperature baking is carried out to temporary substrates 40, removes surface impurity, temperature is 900 DEG C~1100 DEG C, and atmosphere is hydrogen nitrogen
Gaseous mixture or pure hydrogen or pure nitrogen gas atmosphere
The deposited n-type GaN on temporary substrates 40, i.e. planar N-type semiconductor layer 15, gallium source are TMGa, and nitrogen source is
NH3, V/III ratio is 200~1000 (gas flow ratios of group V source and group III source, i.e. NH3Flow/TMGa flow), the source Si
For SiH4, reaction cavity pressure is 100mbar~500mbar, and growth temperature is 900 DEG C~1100 DEG C, with a thickness of 500nm~3 μm.
InGaN/GaN multiple quantum wells is deposited on N-type GaN, 81, InGaN be well layer, and the source In is TMIn, growth temperature
It is 500 DEG C~700 DEG C, is barrier layer with a thickness of 1nm~5nm, GaN, growth temperature is 700 DEG C~900 DEG C, with a thickness of 3~15nm.
Two layers of the source Ga is TMGa, and the source N is NH3, two layers is a cycle, symbiosis long 3~20 periods.
P-type GaN is deposited on multiple quantum well layer 81, i.e. P-type semiconductor mentions layer 83, and gallium source is TMGa, and nitrogen source is
NH3, the source Mg is Cp2Mg, and growth temperature is 800 DEG C~1000 DEG C, with a thickness of 100nm~1 μm.
S2, the above structure has been grown, epitaxial wafer has been taken out, using electron beam evaporation (EB) or sputtering method (Sputter) etc.
Method deposits one layer of ITO, i.e. metal layer 85 on the surface p-type GaN, and anneals, and with a thickness of 10~100nm, annealing temperature is
500~600 DEG C, annealing time is 5~20min.
S3, using plasma enhance the methods of chemical vapor deposition (PECVD) or atomic layer deposition (ALD), in ITO,
I.e. 85 surface of metal layer deposits one layer of mask layer, material SiO2Or SiNxDeng with a thickness of 10nm~1 μm.
S4, photoresist is coated on mask layer, using mask blank, technique through exposure and development, then through BOE (HF acid
With NH4The mixed solution of F) solution and ITO etch corrosion, and it finally removes photoresist, forms poroid array structure, expose p-type GaN,
That is p type semiconductor layer 83, bore dia are 10nm~5 μm, this mask layer can make subsequent undoped GaN nanometer rods raw in exposed section
Length, i.e. selective area growth, high temperature ring of the epitaxial layer that lower section can also be protected to have grown when growing undoped GaN nanometer rods
It is not damaged in border.
S5, above step resulting structures are put into MOCVD or HVPE, grow undoped GaN nanorod structure, gallium source is equal
For TMGa, nitrogen source is NH3, V/III ratio is 10~200, and reaction cavity pressure is 600mbar~800mbar, carrier gas N2, raw
Long temperature is 900 DEG C~1100 DEG C.Preferably, using Pulsed growth method, gallium source replaces with nitrogen source is passed through reaction chamber: TMGa is passed through
5s~50s suspends 1s~10s, NH3It is passed through 5s~50s, suspends 1s~10s, this four sections are a circulation, carry out 10~500
Circulation, N during this2It is continually fed into.The diameter of undoped GaN nanometer rods is 10nm~5 μm, is highly 100nm~10 μm.
S6, using BOE solution by mask layer erosion removal, expose ITO, i.e. exposing metal layer 85, to increase corrosion rate,
Corrosive liquid can be heated.
S7, epitaxial layer is patterned, comprising the following steps:
In ITO, i.e., coat photoresist on metal layer 85, using mask blank, technique through exposure and development, make to need by
The exposed in the region of etching
It is using ITO etching liquid, ITO layer is graphical.
It is using dry etching technology, remaining epitaxial layer is graphical, etch deep trench, by Micro LED chip every
It opens, substrate is etched in channel, that is, form epitaxial structure 10 spaced apart.
Photoresist is removed, patterning step terminates, and undoped GaN nanometer rods are located at the center of Micro LED chip.Chip
Shape is that cylinder, circular platform type, square figure or cuboid-type can be achieved, by the figure and dry etching of mask blank
The anisotropy of technology determines.
S8, on undoped GaN nanorod surfaces and the surface ITO, i.e. 85 deposit metal electrodes 7 of metal layer, including it is but unlimited
In the pure metal such as the alloys such as Cr/Pt/Au, Ti/Au or Al, Au, Cu.
In addition step S7 and S8 could alternatively be following steps:
S7 ', using the methods of EB or Sputter, in epi-layer surface whole face deposit metal electrodes 7, including undoped GaN
The surface of nanometer rods and the surface of ITO, that is, metal layer 85.
S8 ', epitaxial layer is patterned, comprising the following steps:
Photoresist is coated on metal, using mask blank, technique, makes the channel that need to be etched through exposure and development
Region is exposed.
Using dry etching technology, channel region metal is performed etching, specific metal can also be used to special metal
Corrosive liquid is corroded.
Using ITO corrosive liquid, channel ITO is corroded.
It is using dry etching technology, remaining epitaxial layer is graphical, etch deep trench, by Micro LED chip every
It opens, substrate is etched in channel.
Photoresist is removed, patterning step terminates, and undoped GaN nanometer rods are located at the center of Micro LED chip.
S9, using PECVD or ALD, in LED chip side wall and two-dimentional epitaxial layer upper surface deposit passivation layer, such as SiO2,
With a thickness of 50nm~500nm.
S10, using ion beam sputtering deposition method, dbr structure, such as SiO is deposited in passivation layer surface2/TiO2、 MgF/
ZrO2Deng, two layers is a cycle, be deposited 3~50 periods.
S11, production driving backboard 4, backboard inside are CMOS or TFT circuit, and pad 5 leads to driving 4 surface of backboard, and
In array distribution, the spacing of pad 5 is equal with undoped GaN nanometer stick array structure, and 5 diameter of pad is less than or equal to undoped
The diameter of GaN nanometer rods.
S12, one layer of flat photoresist of spin coating on backboard, thickness are less than or equal to the height of undoped GaN nanometer rods
S13, photoetching is carried out, is the hole in array distribution after developed, is i.e. limit hole b exposes bottom electrode, hole
Pattern is cylinder, reverse frustoconic, quadrangular, six prismatics, as long as the diameter that diameter is greater than undoped GaN nanometer rods is
It can.
S14, metal soft and with good conductivity, including but not limited to In, Ag, Sn, Al are filled in hole
Deng, the loading of metal is less than the difference of the volume of hole and the volume of undoped GaN nanometer rods, in case metal spilling is made when binding
At short circuit, so far, backboard is completed the process.
S15, para-linkage is carried out, in the hole for making undoped GaN nanometer rods insertion backboard.Since there are wafers for epitaxial layer
The depth of warpage, the undoped GaN nanometer rods insertion hole of each region is different, but insertion depth on display effect without influence,
If the ductile metal in undoped GaN nanometer rods contact hole, therefore the embodiment of the present invention can mitigate silicon wafer warpage
Influence
S16, using capillarity, ultraviolet glue is filled in gap after bonding, and consolidate ultraviolet glue with ultraviolet light irradiation
Change.This ultraviolet glue has insulating effect, transparent or opaque, there is good viscosity, can be by epitaxial layer 8 and driving backboard 4
Close adhesion.
S17, removing temporary substrates 40.For Sapphire Substrate, laser lift-off technique can be used, ultraviolet glue can play support
Effect, improving removing yield can be used wet etching for silicon substrate, and ultraviolet glue need to have corrosion resistant characteristic at this time.
S18, the surface N-type GaN exposed after substrate desquamation is roughened, improves light extraction efficiency.Wet process can be used
Etch is roughened the surface N-type GaN at random, photoetching, dry etching can also be used, by N-shaped GaN surface etch Cheng Chengzhou
The figure of phase arrangement.
S19, using the methods of electron beam evaporation (EB) or sputtering method (Sputter), the surface type GaN N after roughening is heavy
One layer of ITO is as common transparent electrode for product, i.e., cathode layer 14 and anneals, with a thickness of 10~100nm, annealing temperature 500
~600 DEG C, annealing time is 5~20min.Cathode layer 14 includes but is not limited to ITO, the FTO (SnO of fluorine doped2), AZO (mix Al's
ZnO).
S20, using photoetching process, black matrix 19 is made on cathode layer 14, each Micro LED chip is separated,
As the dykes and dams for stopping quantum dot ink.By the way of printing quantum dot, with three Micro LED for a unit, every
The red and green quantum dot ink of printing above the two of them Micro LED chip of a unit, realizes that colorization is shown, finally
Transparent cover plate 20 is covered above, and black matrix 19 plays a supportive role.Or it as shown in figure 9, can also be directly above cathode layer 14
Covering is coated with the transparent cover plate 20 of red green quantum dot.
Specifically, the manufacturing process of the display panel of structure shown in manufacturing process Fig. 5 of the display panel of structure shown in Fig. 8
In step S11 to S13 replacement it is as follows:
S11 ', soft metal is wrapped up on the pad 5 of driving backboard 4, after annealing, under surface tension effects
Metal is in elliposoidal, i.e., soft conductive structure 6.
S12 ', para-linkage is carried out, is inserted into undoped GaN nanometer rods in soft conductive structure 6.
S13 ', using capillarity, ultraviolet glue is filled in gap after bonding, and consolidate ultraviolet glue with ultraviolet light irradiation
Change.
It should be noted that the embodiment of the present invention shows that attached drawing is only exemplary the size for indicating each element, do not represent
The actual size of each element in display panel.
The embodiment of the invention also provides a kind of display device, Figure 10 is a kind of display device provided in an embodiment of the present invention
Structural schematic diagram.As shown in Figure 10, display device 200 includes the display panel 190 of above-described embodiment, therefore the present invention is real
The display device 200 for applying example offer also has beneficial effect described in above-described embodiment, and details are not described herein again.It is exemplary
Ground, display device can be mobile phone, or can be the electronic equipments such as computer or wearable device, and the embodiment of the present invention is to display
The concrete form of device is not construed as limiting.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The present invention is not limited to specific embodiments here, be able to carry out for a person skilled in the art it is various it is apparent variation, again
Adjustment and substitution are without departing from protection scope of the present invention.Therefore, although by above embodiments to the present invention carried out compared with
For detailed description, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, can be with
Including more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (10)
1. a kind of display panel characterized by comprising
Multiple luminescent devices, each luminescent device include plane film layer and the column structure for being raised in the plane film layer；
Drive backboard, be provided on the driving backboard with the one-to-one pad of the luminescent device, the pad is soft
Conductive structure covering, the column structure of the luminescent device are inserted into the soft conductive structure so as to wrap up the column structure
Metal electrode is electrically connected with the corresponding pad.
2. display panel according to claim 1, which is characterized in that the epitaxial layer of the luminescent device wraps up the column
Structure and the column structure are N-type semiconductor structure；Alternatively, the plane film layer of the luminescent device includes described shines
The epitaxial layer of device and the column structure are undoped semiconductor structure.
3. display panel according to claim 2, which is characterized in that the epitaxial layer of the luminescent device wraps up the column
Structure and the column structure are N-type semiconductor structure, and the plane film layer of the luminescent device includes mask layer, described to cover
Multiple via holes are provided in film layer, the column structure is formed at the corresponding via hole.
4. display panel according to claim 2, which is characterized in that the plane film layer of the luminescent device includes institute
Stating the epitaxial layer of luminescent device and the column structure is undoped semiconductor structure, and the epitaxial layer includes multiple patternings
Epitaxial structure, be provided at least one described column structure on an epitaxial structure, an epitaxial structure and
The column structure on epitaxial structure described in this constitutes a luminescent device.
5. display panel according to claim 1-4, which is characterized in that be provided with insulation on the driving backboard
Layer, the insulating layer correspond to the luminescent device and are formed with multiple limit holes, and the corresponding weldering is provided in the limit hole
Disk and the soft conductive structure being filled in the limit hole.
6. display panel according to claim 1-4, which is characterized in that the luminescent device and the driving are carried on the back
Uv-curable glue is filled in gap after plate bonding.
7. display panel according to claim 1-4, which is characterized in that further include:
Multiple catoptric arrangements, along the direction for being parallel to the display panel, the catoptric arrangement is around the corresponding photophore
The epitaxial layer of part is arranged.
8. display panel according to claim 1-4, which is characterized in that the column structure position of the luminescent device
The side of the driving backboard, the metal electrode of the luminescent device and the corresponding weldering are closed in the plane film layer
Disk electrical connection；
The display panel further includes the cathode layer positioned at the luminescent device far from the driving backboard side, the photophore
The plane film layer of part includes planar N-type semiconductor layer, and the planar N-type semiconductor layer is institute separate in the plane film layer
The film layer of column structure is stated, the planar N-type semiconductor layer is electrically connected with the cathode layer；
Preferably, the planar N-type semiconductor layer has etched features far from the surface of the column structure.
9. display panel according to claim 1-4, which is characterized in that the column structure is along perpendicular to described
The height in plane film layer direction and the column structure are parallel to the ratio of the maximum gauge of plane film layer direction cross section
More than or equal to 2.
10. a kind of display device, which is characterized in that including such as described in any item display panels of claim 1-9.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111033762A (en) * | 2019-11-28 | 2020-04-17 | 重庆康佳光电技术研究院有限公司 | Display substrate and manufacturing method thereof |
| CN111081160A (en) * | 2019-12-31 | 2020-04-28 | 上海天马微电子有限公司 | Display panel, display device and manufacturing method of display panel |
| CN112968021A (en) * | 2020-05-26 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Bonding method and display device |
| CN113066813A (en) * | 2021-03-18 | 2021-07-02 | 武汉天马微电子有限公司 | Miniature diode display bearing substrate, display panel and display device |
| WO2023282177A1 (en) * | 2021-07-08 | 2023-01-12 | 株式会社小糸製作所 | Semiconductor light emitting element and method for producing semiconductor light emitting element |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102915986A (en) * | 2012-11-08 | 2013-02-06 | 南通富士通微电子股份有限公司 | Chip packaging structure |
| CN103190004A (en) * | 2010-09-01 | 2013-07-03 | 夏普株式会社 | Light emitting element and production method for same, production method for light-emitting device, illumination device, backlight, display device, and diode |
| US20150028356A1 (en) * | 2013-07-29 | 2015-01-29 | Gwangju Institute Of Science And Technology | Light emitting diode having multi-junction structure and method of fabricating the same |
| CN106876406A (en) * | 2016-12-30 | 2017-06-20 | 张希娟 | LED full-color display part structures and preparation method based on III V group-III nitride semiconductors |
| CN206401347U (en) * | 2016-10-11 | 2017-08-11 | 宜昌劲森光电科技股份有限公司 | A kind of flip LED base plate for packaging |
| CN107623017A (en) * | 2016-07-15 | 2018-01-23 | 三星显示有限公司 | Display device and its manufacture method |
| CN109994579A (en) * | 2019-04-30 | 2019-07-09 | 云谷（固安）科技有限公司 | The preparation method of miniature LED display panel and miniature LED display panel |
-
2019
- 2019-08-16 CN CN201910760750.1A patent/CN110444562B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103190004A (en) * | 2010-09-01 | 2013-07-03 | 夏普株式会社 | Light emitting element and production method for same, production method for light-emitting device, illumination device, backlight, display device, and diode |
| CN102915986A (en) * | 2012-11-08 | 2013-02-06 | 南通富士通微电子股份有限公司 | Chip packaging structure |
| US20150028356A1 (en) * | 2013-07-29 | 2015-01-29 | Gwangju Institute Of Science And Technology | Light emitting diode having multi-junction structure and method of fabricating the same |
| CN107623017A (en) * | 2016-07-15 | 2018-01-23 | 三星显示有限公司 | Display device and its manufacture method |
| CN206401347U (en) * | 2016-10-11 | 2017-08-11 | 宜昌劲森光电科技股份有限公司 | A kind of flip LED base plate for packaging |
| CN106876406A (en) * | 2016-12-30 | 2017-06-20 | 张希娟 | LED full-color display part structures and preparation method based on III V group-III nitride semiconductors |
| CN109994579A (en) * | 2019-04-30 | 2019-07-09 | 云谷（固安）科技有限公司 | The preparation method of miniature LED display panel and miniature LED display panel |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111033762A (en) * | 2019-11-28 | 2020-04-17 | 重庆康佳光电技术研究院有限公司 | Display substrate and manufacturing method thereof |
| WO2021102764A1 (en) * | 2019-11-28 | 2021-06-03 | 重庆康佳光电技术研究院有限公司 | Display substrate and manufacturing method therefor |
| CN111081160A (en) * | 2019-12-31 | 2020-04-28 | 上海天马微电子有限公司 | Display panel, display device and manufacturing method of display panel |
| CN112968021A (en) * | 2020-05-26 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Bonding method and display device |
| CN113066813A (en) * | 2021-03-18 | 2021-07-02 | 武汉天马微电子有限公司 | Miniature diode display bearing substrate, display panel and display device |
| WO2023282177A1 (en) * | 2021-07-08 | 2023-01-12 | 株式会社小糸製作所 | Semiconductor light emitting element and method for producing semiconductor light emitting element |
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