CN112968021A - Bonding method and display device - Google Patents
Bonding method and display device Download PDFInfo
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- CN112968021A CN112968021A CN202010455568.8A CN202010455568A CN112968021A CN 112968021 A CN112968021 A CN 112968021A CN 202010455568 A CN202010455568 A CN 202010455568A CN 112968021 A CN112968021 A CN 112968021A
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 169
- 229910052751 metal Inorganic materials 0.000 claims abstract description 98
- 239000002184 metal Substances 0.000 claims abstract description 98
- 239000012790 adhesive layer Substances 0.000 claims abstract description 52
- 239000003086 colorant Substances 0.000 claims abstract description 17
- 238000006303 photolysis reaction Methods 0.000 claims description 15
- 239000000853 adhesive Substances 0.000 claims description 13
- 230000001070 adhesive effect Effects 0.000 claims description 13
- 239000010410 layer Substances 0.000 claims description 9
- 230000015843 photosynthesis, light reaction Effects 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000011231 conductive filler Substances 0.000 claims description 4
- 239000003292 glue Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- -1 polyphenylene ethylene Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- Computer Hardware Design (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a bonding method and a display device, wherein the method comprises the following steps: providing a first transfer substrate, wherein a plurality of LED chips are arranged on the first transfer substrate; providing a target substrate, wherein a plurality of metal columns and a conductive adhesive layer are arranged on the target substrate, and the conductive adhesive layer covers the metal columns; providing an aligning machine, aligning the first transfer substrate with the target substrate, inserting the metal posts into bonding pads of the LED chip, and enabling the conductive adhesive layer to wrap the bonding pads, wherein the hardness of the metal posts is greater than that of the bonding pads; and curing the conductive adhesive layer to bond the LED chip and the metal column. According to the bonding method, after the LED chips are accurately aligned by the alignment machine, the LED chips with different colors can be transferred and bonded onto the target substrate in a large amount through the conductive adhesive layer and the metal column, and the problem that the LED chips are cracked can be effectively avoided.
Description
Technical Field
The invention belongs to the technical field of Micro LEDs, and particularly relates to a bonding method and a display device.
Background
With the development of display technology, the manufacturing process of micro-components becomes a development trend of display panels, such as micro Light Emitting Diode (LED) (i.e. micro-LED) technology. The Micro LED technology is considered as a next generation display technology to replace TFT-LCD and OLED display, and the ideal Micro LED display has many advantages of high pixel, high contrast, self-luminescence, low energy consumption, long life, and the like.
In the production of Micro LEDs, millions or even tens of millions of micron-sized red, blue, and green LED chips need to be quickly and accurately bonded to a driving circuit of a backplane, but due to different material characteristics of the LED chips with different colors, the problem of red LED chip cracking is easily caused when the LED chips with different colors are subjected to mass transfer bonding, so that the existing mass transfer bonding technology cannot effectively realize simultaneous mass transfer bonding of different chips.
Therefore, the prior art needs to be improved.
Disclosure of Invention
In view of the above disadvantages of the prior art, the present invention provides a bonding method, which aims to solve the problem that the LED chips with different colors cannot be effectively and simultaneously subjected to bulk transfer bonding in the bulk transfer bonding process of the existing chip.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
in a first aspect, the present application provides a bonding method comprising the steps of:
providing a first transfer substrate, wherein a plurality of LED chips are arranged on the first transfer substrate so as to arrange the LED chips with different colors in a large quantity;
providing a target substrate, wherein a plurality of metal columns and a conductive adhesive layer are arranged on the target substrate, and the conductive adhesive layer covers the metal columns so that the metal columns correspond to the LED chip in position;
providing an aligning machine, aligning the first transfer substrate with the target substrate, inserting the metal posts into the bonding pads of the LED chips, and enabling the conductive adhesive layer to wrap the bonding pads, wherein the hardness of the metal posts is greater than that of the bonding pads, so that the LED chips and the metal posts are accurately aligned and bonded, and the problem that the LED chips are easy to crack is avoided; and curing the conductive adhesive layer to bond the LED chip and the metal column, so that the bonding stability of the LED chip and the metal column is increased, and the conductivity between the LED chip and the metal column is ensured.
Optionally, a plurality of LED chips are disposed on the first transfer substrate, including:
providing a second transfer substrate, wherein the plurality of LED chips are stripped from the growth substrate and are arranged on the second transfer substrate, so that the LED chips with different colors are arranged on the second transfer substrate;
and peeling the plurality of LED chips from the second transfer substrate and arranging the LED chips on the first transfer substrate so that the light emitting surfaces of the LED chips with different colors deviate from the first transfer substrate, thereby realizing the transfer arrangement of the LED chips with different colors on the first transfer substrate.
Optionally, the LED chips are arranged on the first relay substrate or the second relay substrate at equal intervals in rows, and each row of LED chips has the same color, and adjacent rows of LED chips have different colors, so as to realize that the red, green, and blue LED chips are arranged on the first relay substrate or the second relay substrate at equal intervals in rows.
Optionally, the plurality of LED chips are bonded to the first relay substrate or the second relay substrate through a photolysis adhesive, and after the plurality of LED chips are transferred to the first relay substrate or the second relay substrate, the plurality of LED chips and the first relay substrate or the second relay substrate may be peeled off through a photolysis method.
Optionally, a plurality of metal pillars and a conductive adhesive layer are disposed on the target substrate, and the conductive adhesive layer covers the metal pillars, including:
manufacturing a plurality of metal columns on the target substrate so that each LED chip corresponds to two metal columns, and thus bonding is realized through the two metal columns and each LED chip;
and coating a conductive adhesive layer on the surface of the target substrate to cover the metal posts, so that when the LED chip is bonded with the metal posts, the LED chip is connected with the target substrate through the conductive adhesive layer.
Optionally, the aligning machine aligns the first relay substrate with the target substrate, and includes:
loading a target substrate into an alignment machine, and searching a first alignment mark through the alignment machine, wherein the first alignment mark is arranged on the target substrate;
loading a first transfer substrate into an alignment machine, searching a second alignment mark to enable the second alignment mark to be overlapped with the first alignment mark, so that two ends of each LED chip are covered with two metal columns, wherein the second alignment mark is arranged on the first transfer substrate, and the target substrate and the first transfer substrate are accurately aligned through the first alignment mark and the second alignment mark.
Optionally, the aligning machine aligns the first relay substrate with the target substrate, inserts the metal posts into the pads of the LED chips, and wraps the pads with the conductive adhesive layer, and includes:
the alignment machine aligns the first transfer substrate with the target substrate;
the alignment machine applies pressure to the first transfer substrate, so that the metal posts are inserted into the bonding pads of the LED chips, the bonding pads are wrapped by the conductive adhesive layer, bonding of each LED chip and the two metal posts is achieved, and the bonding pads of the LED chips extrude the conductive adhesive layer.
Optionally, the conductive adhesive layer is composed of 10% to 85% by mass of an adhesive and 20% to 50% by mass of a conductive filler, so that the stability of bonding the LED chip and the metal pillar is increased through the conductive adhesive layer, and the conductivity between the LED chip and the metal pillar is ensured.
Optionally, the thickness of the conductive adhesive layer is 1 to 5 micrometers, so as to ensure that when the LED chip is bonded to the metal pillar, the LED chip is connected to the target substrate through the conductive adhesive layer, and the conductive particles of the conductive adhesive layer are pressed between the bonding pad of the LED chip and the metal pillar, so as to ensure the conductivity between the LED chip and the metal pillar.
In a second aspect, based on the bonding method, the invention further provides a display device, which includes the target substrate and an LED chip bonded on the target substrate by using the bonding method.
Drawings
FIG. 1 is a flow chart of a bonding method provided by the present invention;
fig. 2 is a schematic diagram illustrating an arrangement of LED chips on the first transfer substrate according to the present invention;
fig. 3 is a schematic diagram of bonding between the LED chip and the metal pillar according to the present invention;
FIG. 4 is a schematic diagram of the arrangement of metal pillars on the target substrate according to the present invention;
fig. 5 is a schematic view illustrating alignment between the first relay substrate and the target substrate according to the present invention.
Detailed Description
The present invention provides a bonding method, and the present invention will be described in further detail below in order to make the objects, technical solutions, and effects of the present invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, fig. 1 is a flowchart of a bonding method provided by the present invention, where the bonding method includes the following steps:
s100, providing a first transfer substrate, wherein a plurality of LED chips are arranged on the first transfer substrate.
Specifically, the first relay substrate may be a sapphire substrate or a glass substrate for receiving a plurality of LED chips of different colors, where the plurality of LED chips of different colors include three-color LED chips of red, green, and blue. In this embodiment, the LED chips with different colors are arranged on the first relay substrate, and a large amount of the LED chips is transferred to the target substrate, so that the bonding between the LED chips with different colors and the target substrate is realized.
In this embodiment, the arranging the LED chips on the first relay substrate includes:
s10, providing a second transfer substrate, wherein the LED chips are stripped from the growth substrate and are arranged on the second transfer substrate;
and S20, peeling the LED chips from the second transfer substrate and arranging the LED chips on the first transfer substrate.
Specifically, the LED chip refers to a micro device formed on the growth substrate, the growth substrate is generally a sapphire substrate or a glass substrate, the LED chip includes bonding pads with epitaxial layers disposed on the epitaxial layers, two bonding pads are disposed on the epitaxial layers of each LED chip, and the epitaxial layers are attached to the growth substrate. Since the epitaxial layer and the growth substrate have different absorptivity for the uv laser, for example, the sapphire substrate has a higher band gap energy (9.9eV), the gallium nitride has a band gap energy (about 3.3eV), and the krypton fluoride (KrF) excimer laser irradiation energy (5.0eV) at 248nm is transparent relative to the sapphire substrate, while the gallium nitride absorbs the laser energy at 248nm, and the laser passes through the sapphire to reach the gallium nitride buffer layer for laser lift-off, so that the lifted-off LED chips are arranged on the second relay substrate according to a predetermined arrangement.
Specifically, the LED chips are arranged on the first relay substrate and the second relay substrate at equal intervals in rows, each row of LED chips has the same color, and adjacent rows of LED chips have different colors, as shown in fig. 2, where fig. 2 shows that the three-color LED chips of red, green, and blue on the first relay substrate are arranged at equal intervals in rows.
In this embodiment, after the LED chips with different colors are respectively peeled off from the growth substrate, the LED chips are arranged on the second relay substrate in rows and at equal intervals, each row of LED chips has the same color, the adjacent rows of LED chips have different colors, and the light emitting surfaces of the LED chips face the second relay substrate. Specifically, the one side of first transfer base plate and second transfer base plate all is provided with the photodissociation glue film, the LED chip through the photodissociation glue film bond in first transfer base plate or on the second transfer base plate, so that with a plurality of LED chip with first transfer base plate or when the second transfer base plate is peeled off, the mode through photodissociation is right the photodissociation glue film is debonded.
Further, it is right photodissociation glue film on the second transfer base plate carries out the photodissociation, makes the photodissociation glue film loses viscidity, in order to incite somebody to action the LED chip with the second transfer base plate is peeled off, thereby will the LED chip shifts to first transfer base plate, makes the light emitting area of LED chip deviates from first transfer base plate.
S200, providing a target substrate, wherein a plurality of metal columns and a conductive adhesive layer are arranged on the target substrate, and the conductive adhesive layer covers the metal columns.
Specifically, the metal selected by the metal column is silver, copper, aluminum, tungsten or other harder and well-conductive metal. One end of the metal column is attached to the target substrate, and the other end of the metal column extends to a direction perpendicular to the target substrate to form a conical metal column.
Further, in order to increase the bonding firmness of the metal column and the LED chip, after the metal column is fabricated on the target substrate, the stability of the LED chip bonded on the target substrate is increased by coating a conductive adhesive layer on the surface of the target substrate. One side of the conductive adhesive layer is laid on the target substrate, and one side, far away from the target substrate, of the conductive adhesive layer covers the top end of the metal column or exposes the top end part of the metal column. In a specific implementation manner of the embodiment, on a side of the conductive adhesive layer away from the target substrate, a top end portion of the metal pillar is exposed, so that the top end of the metal pillar is inserted into the pad of the LED chip.
In this embodiment, a plurality of metal posts and a conductive adhesive layer are arranged on the target substrate, and the conductive adhesive layer covers the metal posts, including:
s201, manufacturing a plurality of metal columns on the target substrate so that each LED chip corresponds to two metal columns;
s202, coating a conductive adhesive layer on the surface of the target substrate to cover the metal columns.
Specifically, the metal pillar may be fabricated on the target substrate through PV lithography, PV etching, UBM yellow light, evaporation, and other steps to obtain the metal pillar disposed on the target backplane, which is the prior art and is not described herein again. It is worth noting that the LED chip includes two bonding pads, when the metal posts are arranged on the target substrate at intervals, the metal posts and the bonding pads of the LED chip are in one-to-one correspondence, and the hardness of the metal posts is greater than that of the bonding pads of the LED chip, so that when the first relay substrate and the target substrate are aligned, the top ends of the metal posts are in contact with the bonding pads of the LED chip, and when the first relay substrate and the target substrate are pressed, the top ends of the metal posts are inserted into the bonding pads to bond the metal posts and the LED chip.
Specifically, the conductive adhesive layer is a connection layer formed by anisotropic conductive adhesive, anisotropic conductive adhesive particles are present in the conductive adhesive layer, when the LED chip and the metal column are bonded, the conductive adhesive particles located between the metal column and the bonding pad of the LED chip are pressed, the anisotropic conductive adhesive particles can conduct electricity when pressed, and the conductive adhesive located between the metal columns is in an insulating state because not pressed.
In the embodiment, the conductive adhesive layer is composed of 10-85% of adhesive and 20-50% of conductive filler by mass, the coating thickness of the conductive adhesive is 1-5 micrometers, the conductive adhesive layer is thermosetting conductive adhesive, and the conductive adhesive can be cured when being heated. In practical application, the conductive filler may be a nano metal conductive material or a conductive polymer, the nano metal conductive material may be nano gold, nano silver, nano copper, etc., the conductive polymer may be polyacetylene, polythiophene, polypyrrole, polyaniline, polyphenylene ethylene, polydiyne, etc., and the nano metal conductive material and the conductive polymer may be used alone or in combination.
S300, providing an aligning machine, aligning the first transfer substrate with the target substrate, inserting the metal posts into bonding pads of the LED chips, and enabling the conductive adhesive layer to wrap the bonding pads, wherein the hardness of the metal posts is greater than that of the bonding pads.
Specifically, the alignment machine is a bonding device for bonding the LED chip and the metal column of the back plate, and the alignment machine is provided with left and right objective lenses for alignment, so that the bonding pads of the LED chip correspond to the metal column in position, thereby achieving precise alignment of the LED chip and the metal column.
In this embodiment, the aligning machine aligns the first relay substrate with the target substrate, inserts the metal post into the pad of the LED chip, and wraps the pad with the conductive adhesive layer, and includes:
s301, aligning the first transfer substrate with the target substrate by the aligning machine;
s302, the aligning machine applies pressure to the first transfer substrate so that the metal posts are inserted into the bonding pads of the LED chips, and the conductive adhesive layer wraps the bonding pads.
Specifically, as shown in fig. 3, after the first relay substrate is aligned with the target substrate, the metal posts 2 on the target substrate 1 and the LED chips 4 on the first relay substrate 3 are in contact, and each LED chip covers two metal posts, since the hardness of the metal posts 2 is greater than that of the pads of the LED chips 4, the tips of the metal posts 2 can be inserted into the pads of the LED chips 4 by applying pressure to the first relay substrate 3, so that the LED chips 4 and the metal posts 2 are bonded. Because the hardness of the metal column is greater than that of the bonding pad of the LED chip, and the metal column is conical, the pressure required to be applied by the first transfer substrate can be greatly reduced, and the problem that the LED chip is cracked is effectively avoided.
In this embodiment, the aligning machine aligns the first relay substrate with the target substrate, and includes:
s3011, loading a target substrate into an alignment machine, and searching a first alignment mark through the alignment machine, wherein the first alignment mark is arranged on the target substrate;
s3012, loading the first transfer substrate into an alignment machine, and searching for a second alignment mark to make the second alignment mark coincide with the first alignment mark, so that each LED chip covers two metal posts, wherein the second alignment mark is disposed on the first transfer substrate.
Specifically, the first relay substrate is provided with the first alignment mark 10, and the first alignment mark 10 is a mark with a preset shape provided on the first relay substrate, as shown in fig. 2, and is used for performing an alignment function when being bonded with a target substrate. It is understood that the target substrate is provided with a second alignment mark 20, as shown in fig. 4, the first alignment mark and the second alignment mark are made to coincide with each other by an alignment machine to align the first relay substrate with the target substrate, as shown in fig. 5, so as to bond the LED chip and the target backplane.
S400, curing the conductive adhesive layer to bond the LED chip and the metal column.
Specifically, the conductive adhesive layer 5 can be cured by heating at a certain temperature for a predetermined time, so that the bonding stability of the LED chip and the metal pillar is increased. In this embodiment, when the temperature is 100 ℃, the conductive adhesive layer can be cured by heating for 5 minutes, so as to increase the stability of bonding the LED chip to the target substrate.
Further, after the curing the conductive adhesive to bond the LED chip and the back plate metal pillar, the method further includes:
s501, illuminating the photolysis adhesive layer to perform debonding on the photolysis adhesive layer;
s502, stripping the plurality of LED chips bonded on the target substrate from the first transfer substrate.
Specifically, after the LED chip and the metal pillar are bonded, photolysis may be performed on photolysis glue between the LED chip and the first intermediate substrate, so as to obtain the display device.
Based on the bonding method, the invention also provides a display device which comprises the target substrate and the LED chip bonded on the target substrate by adopting the bonding method.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A bonding method, characterized in that the method comprises:
providing a first transfer substrate, wherein a plurality of LED chips are arranged on the first transfer substrate;
providing a target substrate, wherein a plurality of metal columns and a conductive adhesive layer are arranged on the target substrate, and the conductive adhesive layer covers the metal columns;
providing an aligning machine, aligning the first transfer substrate with the target substrate, inserting the metal posts into bonding pads of the LED chip, and enabling the conductive adhesive layer to wrap the bonding pads, wherein the hardness of the metal posts is greater than that of the bonding pads;
and curing the conductive adhesive layer to bond the LED chip and the metal column.
2. The bonding method of claim 1, wherein the first interposer substrate has a plurality of LED chips disposed thereon, comprising:
providing a second transfer substrate, wherein the plurality of LED chips are stripped from the growth substrate and are arranged on the second transfer substrate;
and peeling the plurality of LED chips from the second transfer substrate and arranging the LED chips on the first transfer substrate.
3. The bonding method according to claim 2, wherein the plurality of LED chips are arranged on the first relay substrate and the second relay substrate at equal intervals in columns, and each column of LED chips has the same color, and adjacent columns of LED chips have different colors.
4. The bonding method according to claim 2, wherein a photolysis layer is disposed on each of the first relay substrate and the second relay substrate, and the plurality of LED chips are bonded to the first relay substrate or the second relay substrate through the photolysis layer.
5. The bonding method of claim 1, wherein the target substrate has a number of metal pillars disposed thereon and a conductive adhesive layer covering the number of metal pillars, comprising:
manufacturing a plurality of metal columns on the target substrate so that each LED chip corresponds to two metal columns;
and coating a conductive adhesive layer on the surface of the target substrate to cover the metal columns.
6. The bonding method of claim 5, wherein the alignment machine aligns the first relay substrate with the target substrate, comprising:
loading a target substrate into an alignment machine, and searching a first alignment mark through the alignment machine, wherein the first alignment mark is arranged on the target substrate;
loading a first transfer substrate into an alignment machine, and searching a second alignment mark to enable the second alignment mark to be superposed with the first alignment mark so as to enable two ends of each LED chip to cover two metal columns, wherein the second alignment mark is arranged on the first transfer substrate.
7. The bonding method according to claim 5, wherein the aligning machine aligns the first relay substrate with the target substrate, inserts the metal posts into the bonding pads of the LED chips, and wraps the bonding pads with the conductive adhesive layer, and comprises:
the alignment machine aligns the first transfer substrate with the target substrate;
the alignment machine applies pressure to the first transfer substrate, so that the metal posts are inserted into the bonding pads of the LED chips, and the conductive adhesive layer wraps the bonding pads.
8. The bonding method according to claim 7, wherein the conductive adhesive layer is composed of 10-85% by mass of the adhesive and 20-50% by mass of the conductive filler.
9. The bonding method according to claim 8, wherein the thickness of the conductive adhesive layer is 1-5 μm.
10. A display device comprising the target substrate according to any one of claims 1 to 9 and an LED chip bonded on the target substrate by the bonding method according to any one of claims 1 to 9.
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| CN202010455568.8A CN112968021A (en) | 2020-05-26 | 2020-05-26 | Bonding method and display device |
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| CN202010455568.8A CN112968021A (en) | 2020-05-26 | 2020-05-26 | Bonding method and display device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024020954A1 (en) * | 2022-07-28 | 2024-02-01 | 广东省科学院半导体研究所 | Substrate bonding method |
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