JPH0321983A - Light emitting diode display device - Google Patents
Light emitting diode display deviceInfo
- Publication number
- JPH0321983A JPH0321983A JP1156094A JP15609489A JPH0321983A JP H0321983 A JPH0321983 A JP H0321983A JP 1156094 A JP1156094 A JP 1156094A JP 15609489 A JP15609489 A JP 15609489A JP H0321983 A JPH0321983 A JP H0321983A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- transparent conductive
- conductive film
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000853 adhesive Substances 0.000 claims abstract description 29
- 230000001070 adhesive effect Effects 0.000 claims abstract description 29
- 125000006850 spacer group Chemical group 0.000 claims abstract 6
- 239000010408 film Substances 0.000 claims description 48
- 239000010931 gold Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000007772 electrode material Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 229920000620 organic polymer Polymers 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は多数の発光ダイオードチップを、アレイ状セグ
メント状に配列設置された、表示用、照明具等に最適な
発光ダイオード表示装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a light emitting diode display device in which a large number of light emitting diode chips are arranged in an arrayed segment shape and is suitable for display purposes, lighting equipment, etc.
（従来の技術）
従来において、発光ダイオードチップ（以１１ Ｌ Ｅ
Ｄチップと称する）を光源とし、それをプリント基板上
にアレイ状、日の字セグメント状、或はドットマトリッ
クス状に配列設置された、いわゆる発光ダイオード表示
装ｉｆ！（以後ＬＥＤ表示器と称する）は急速に普及し
つつある。それらのＬＥＤ表示器の従来の電気的導通の
構成を第２図に示すと、プリント基板上２１に、ＬＥＤ
チツブ２２をダイボンディングし、ＬＥＤチップの上部
オーミック電極と、プリント基板の回路パターンのり一
ド２３とをＡｕやＡ１等の細いワイヤー２４でボンディ
ングを行って結線し、そして保護樹脂２５でボッティン
グ（或はモールド）をしていた。(Prior Art) Conventionally, light emitting diode chips (hereinafter referred to as 11 L E
A so-called light-emitting diode display device (if! (hereinafter referred to as LED indicators) are rapidly becoming popular. The conventional electrical conduction structure of those LED indicators is shown in FIG. 2.
The chip 22 is die-bonded, the upper ohmic electrode of the LED chip and the circuit pattern glue 23 of the printed circuit board are connected by bonding with a thin wire 24 such as Au or A1, and then the protective resin 25 is used to bond ( or mold).
（発明が解決しようとする課題〉
ところで、この従来のＬＥＤ表示器におけるワイヤーボ
ンディング方式に基づいた電気的導通には、以下に述べ
る問題点が存在する。(Problems to be Solved by the Invention) By the way, the following problems exist in electrical continuity based on the wire bonding method in this conventional LED display.
プリント基板上の多数のＬＥＤチップの結線には、ワイ
ヤーボンディングを１つ１つ行っていかなければならな
いので、必然的に作業コストがかかりすぎ、そのため生
産性が高コストとなり、量産の阻害要因となっていた。To connect a large number of LED chips on a printed circuit board, wire bonding must be performed one by one, which inevitably results in high work costs, which increases productivity and hinders mass production. It had become.
また、ボンディング用のワイヤーは、ＬＥＤ表示器の長
時間連続使用時の発熱や過電流などによってしはしば断
線を引き起こすことがあり、また例えばプリント基板が
フレキシブルなものであれば、それを屈曲させたときに
、ワイヤーに歪みがかかって断線をまぬがれなかった。In addition, bonding wires often break due to heat generation or overcurrent during long-term continuous use of the LED display, and if the printed circuit board is flexible, When I did so, the wire was strained and could not be avoided from breaking.
従って本発明は、ワイヤーを使用せずに電気的導通を得
ることを目的とするワイヤーボンディングレス方式に基
づ＜ＬＥＤ表示器を得ることを目ざすものである。Therefore, the present invention aims to obtain an LED display based on a wire bonding-less method that aims to obtain electrical continuity without using wires.
（課題を解決するための手段）
前述の問題点をふまえ本発明では、Ｌ Ｅ Ｄチップを
ダイボンディングしたプリント基板上にスベーサーの機
能を有する絶縁性フィルム接着剤を貼着し、その上に透
明導電性フィルムを被せて重ね合わせ積層して、ＬＥＤ
チップをラミネートして接着し、絶縁性フィルム接着剤
は、ＬＥＤチップの設けられる箇所と同じ箇所にパンチ
孔を設け、パンチ孔を介してＬＥＤチップのオーミック
電極と透明導電性フィルムの導電面が接触する構造を有
し、また絶縁性フィルム接着剤の厚さはＬＥＤチップの
厚さよりも少し薄くし、及びＬＥＤチップのオーミック
電極は、チップのふちにＩＥｉ物質を盛り上げて形成し
、中心点を電極非形成の構造に形成して、プリント基板
と透明導電性フィルムからわずかに生じる張力により加
圧接触させて、電気的導通を得ることを特徴とする。(Means for Solving the Problems) In view of the above-mentioned problems, in the present invention, an insulating film adhesive having a baser function is pasted on a printed circuit board on which an LED chip is die-bonded, and a transparent film is applied on top of it. LED by covering with conductive film and laminating
The chips are laminated and bonded, and the insulating film adhesive has punch holes in the same locations as the LED chips, and the ohmic electrodes of the LED chips and the conductive surface of the transparent conductive film come into contact through the punch holes. The thickness of the insulating film adhesive is slightly thinner than that of the LED chip, and the ohmic electrode of the LED chip is formed by heaping up IEi material on the edge of the chip, with the center point as the electrode. It is characterized in that it is formed into a non-forming structure and brought into pressure contact with the printed circuit board using a slight tension generated from the transparent conductive film to obtain electrical continuity.
（作用）
本発明によりプリント基板と透明導電性フィルムに無理
な張力をかけることがなく、強固に接着されて剥離がし
ににくく、また屈曲させてもＬＥＤチップと透明導電性
フィルムとの加圧接触、電気的導通を良好に行うことが
できる．
（実施例）
次に本発明の実施例を図面に基づいて説明する。(Function) According to the present invention, there is no need to apply unreasonable tension to the printed circuit board and the transparent conductive film, they are firmly adhered and difficult to peel off, and even when bent, the LED chip and the transparent conductive film are pressurized. Good contact and electrical continuity can be achieved. (Example) Next, an example of the present invention will be described based on the drawings.
第１図は本発明の実施例の構造を示す一断面図である。FIG. 1 is a sectional view showing the structure of an embodiment of the present invention.
プリント基板１１にＬＥＤチップ１２がダイボンディン
グされ、上部の透明導電性フィルム１３には、有機ポリ
マーの透明フィルムに金をスバッタ法により薄膜を形成
したものや、またはＩＴＯ（酸化錫・インジウム〉を使
用した。そしてプリント基板上に絶縁性フィルム接着剤
１４を貼着して、その上に透明導電性フィルムを被せ、
接着する。絶縁性フィルム接着剤１４には、ＬＥＤチッ
プの設けられている箇所と同箇所に、バンチ孔１５を設
け、また絶縁性フィルム接着剤の厚さは、ＬＥＤチップ
の厚さよりも少し薄いものを用い、これにより透明導電
性フィルムにはこの箇所で若干の張力が１６の箇所で生
じ、その張力でＬＥＤチップとの加圧接触、電気的導通
を得る。The LED chip 12 is die-bonded to the printed circuit board 11, and the transparent conductive film 13 on the top is made of a thin film formed by sputtering gold on a transparent film of an organic polymer, or ITO (tin oxide/indium oxide). Then, an insulating film adhesive 14 was pasted on the printed circuit board, and a transparent conductive film was placed on top of it.
Glue. Bunch holes 15 are provided in the insulating film adhesive 14 at the same locations as the LED chips, and the thickness of the insulating film adhesive is slightly thinner than that of the LED chips. As a result, a slight tension is generated in the transparent conductive film at this location 16, and this tension provides pressurized contact and electrical continuity with the LED chip.
ＬＥＤチップのオーミック電極１７は、チップのふちに
ａｉｍ質を盛り上げて形成し、中心点を非形成の構造の
電極に形成する。The ohmic electrode 17 of the LED chip is formed by raising the aim material on the edge of the chip, and the center point is formed into an electrode with a non-forming structure.
第３図〜第５図は、本発明の実施例であるＬＥＤ表示器
を組み立てるための部品の略図である。3 to 5 are schematic diagrams of parts for assembling an LED display according to an embodiment of the present invention.
第３図ａがＬＥＤチップをダイボンディングするための
所定の回路パターンに設計されたプリント基板である。FIG. 3a shows a printed circuit board designed with a predetermined circuit pattern for die-bonding an LED chip.
本実施例においては、最も一般的である７セグメント日
の字形数字表示器を実施例として述べる。In this embodiment, a 7-segment day glyph and numeric display, which is the most common, will be described as an example.
まず基板ａについては、それぞれのセグメントの発光箇
所にパターン電極３１が設けられている。First, regarding the substrate a, pattern electrodes 31 are provided at the light emitting locations of each segment.
そして所定位置に導電性接着剤の導電性エボキシ樹脂を
塗布し、そこにＬＥＤチップ３２をダイボンディングし
てプリント基板に接着する。また、他の導電性接着剤と
して、導電製フレキシブルフィルム接着剤を使用しても
よい。これをＬＥＤチップと同じ程のサイズにカットし
たものを、プリント基板上に配置して、ＬＥＤチップの
ダイボンディングし接着した。この接着剤を使用するこ
とで、弾性を有しつつきわめて強固に接着される。Then, a conductive epoxy resin, which is a conductive adhesive, is applied to a predetermined position, and the LED chip 32 is die-bonded to the printed circuit board. Further, as another conductive adhesive, a conductive flexible film adhesive may be used. This was cut to the same size as the LED chip, placed on a printed circuit board, and the LED chip was die-bonded and adhered. By using this adhesive, it is possible to bond extremely firmly while maintaining elasticity.
また透明導電性フィルムには過大な張力をがけることは
あまり望ましくないが、この導電性フレキシブルフィル
ム接着剤の有する弾力性が、透明導電性フィルムにかか
る彊力を若干ながら吸収し、より機械的、電気的な安定
度を得る。 モしてＬＥＤチップの設けられている位
置に対応して、パンチ孔３３を設けた絶縁性フィルム接
着剤ｂを、プリント基板ａに被せ貼着する。つまり絶縁
性フィルム接着剤は、スベーサーとしての役割をもって
いる。絶縁性フィルム接着剤としては、感圧性のもの、
熱硬化性のもの、感圧性兼熱硬化性のもの等の材料が使
用でき、特に熱硬化性、感圧性兼熟硬化性のものは強固
な接着力を有しており、これらのものを使用するのが望
ましい。なお絶縁性フィルム接着剤の厚さは、ＬＥＤチ
ップの厚さよりも少し薄いもので、５０〜１５０μｍ程
度のものを使用した。Also, although it is not very desirable to apply excessive tension to the transparent conductive film, the elasticity of this conductive flexible film adhesive slightly absorbs the bending force applied to the transparent conductive film, making it more mechanically effective. , obtain electrical stability. Then, an insulating film adhesive b with punch holes 33 is pasted over the printed circuit board a, corresponding to the positions where the LED chips are provided. In other words, the insulating film adhesive has a role as a baser. Insulating film adhesives include pressure-sensitive ones,
Materials such as thermosetting materials and pressure-sensitive and thermosetting materials can be used.In particular, thermosetting materials, pressure-sensitive materials, and mature hardening materials have strong adhesive strength, so use these materials. It is desirable to do so. The thickness of the insulating film adhesive was slightly thinner than the thickness of the LED chip, and was about 50 to 150 μm.
それから上述の組み立て工程の手順によらなくても、プ
リント基板に、この絶縁性のフィルム接着剤を貼着して
から、パンチ孔を通してＬＥＤチップをダイボンディン
グして組み立てていっても良い。Then, without following the above-described assembly process procedure, the insulating film adhesive may be adhered to the printed circuit board, and then the LED chip may be die-bonded through the punched hole to assemble it.
以上の組み立ての後、透明導電性フィルムＣを全面にわ
たって被せる。そして第５図に示す様に、治具５１のよ
うな機材を用いて、圧力および熱をかけて、プリント基
板ａと透明導電性フィルムｂを接着する。After the above assembly, the entire surface is covered with transparent conductive film C. Then, as shown in FIG. 5, using equipment such as a jig 51, pressure and heat are applied to bond the printed circuit board a and the transparent conductive film b.
特にここで問題とするのは、第１図で示すＬＥＤチップ
のオーミックＩＥｉｌ７と、透明導電性フィルム１３と
の接触部である。本発明者が着目したのは、透明導電性
フィルムが張力によりビンと張られるとＬＥＤチップの
上部のふちの所と透明導電性フィルムが接触するという
ことで、その性質に合った電極が必要であるということ
である。Particularly problematic here is the contact portion between the ohmic IEil7 of the LED chip shown in FIG. 1 and the transparent conductive film 13. The inventor of the present invention noticed that when a transparent conductive film is stretched under tension, the top edge of the LED chip comes into contact with the transparent conductive film, and an electrode that matches this property is required. It means that there is.
すなわちＬＥＤチップの上部オーミック電極は、第４図
ｄ， ｅに示すようなＬＥＤチップ４ｌのふちに電極
物ｊｌ４２を盛り上げて形威し、中心点４２は電極を非
形成とする構造に形成した。この構成にて良好な電気的
接続が可能となった。この構造のオーミック電極は、従
来からの電極形成方法を応用することで容易に得られる
。つまり、ＬＥＤチップにスクライブする前のＬＥＤの
ウェハー表面に、真空蒸Ｍ法、スバッタ法等で、電Ｆｆ
Ａ物質であるＡｕ，ＡＩ、Ｃｕ，Ｓｎ，ＮｉあるいはＡ
ｕ−Ｇｅ合金、Ａｌ−Ｓ ｉ合金などを、５〜５０μｍ
程度の厚さに堆積、あるいはそれらの金属を多層にＦＬ
積し、次にホト・レジスト剤を塗布し、ホト・マスクを
通して、ホト・レジスト剤を感光させ、電極形成部以外
の所のホト・レジスト剤を除去し、エッチングを行うこ
とで、所望の構造の電極を形成し得る。That is, the upper ohmic electrode of the LED chip was formed by raising an electrode material 42 on the edge of the LED chip 4l as shown in FIGS. 4d and 4e, and no electrode was formed at the center point 42. This configuration enabled good electrical connection. An ohmic electrode with this structure can be easily obtained by applying a conventional electrode formation method. In other words, before the LED chips are scribed, an electric current Ff is applied to the surface of the LED wafer using a vacuum evaporation method, a spatter method, etc.
A substance Au, AI, Cu, Sn, Ni or A
u-Ge alloy, Al-Si alloy, etc., with a thickness of 5 to 50 μm
Deposited to a certain thickness, or FL in multiple layers of these metals
The desired structure is formed by applying a photoresist agent, exposing the photoresist agent to light through a photomask, removing the photoresist agent in areas other than the electrode formation area, and performing etching. electrodes can be formed.
そして全面に被せる透明導電性フィルムは、比抵抗がｌ
ＯΩ／ ｃ ｍ以下が望ましく、例えばポリエステルフ
ィルムに金をスパッタ法で１００〜２００オングストロ
ームの薄膜を堆積して作成した透明導電性フィルム等が
適する。この素材は光線透過率が約５５％で、比抵抗が
１０〜１Ω／ ｃ ｍのものまでが得られ、この金をス
バッタした透明導電性フィルムを、絶縁性フィルム接着
剤の上がら被せて、ＬＥＤチップと密着させて接着した
．本実ｍＦＮでは、絶縁性フィルム接着剤として感圧性
兼熱硬化性のものを使用した。接着剤の特性は、せん断
接着力が３０〜２ ０ ０ （ ｋｇ／ｃａ＋２）のも
のを使用した。そして第５図の治具５１で１〜ＩＯ （
ｋ＋／ｃｍ２）の圧力をかけ、その状態で８０ａ〜１
２０”Ｃのオーブンにて５〜３０分程度加熱して接着剤
を硬化させた。The transparent conductive film that covers the entire surface has a specific resistance of 1
It is desirable that it be 0Ω/cm or less, and for example, a transparent conductive film made by depositing a thin film of 100 to 200 angstroms of gold on a polyester film by sputtering is suitable. This material has a light transmittance of about 55% and a specific resistance of 10 to 1 Ω/cm.A transparent conductive film spattered with gold is covered with an insulating film adhesive to create an LED. It was glued in close contact with the chip. In Honjitsu mFN, a pressure-sensitive and thermosetting adhesive was used as the insulating film adhesive. The adhesive used had a shear adhesive strength of 30 to 200 (kg/ca+2). Then, 1 to IO (
k+/cm2) and in that state 80a~1
The adhesive was cured by heating in a 20"C oven for about 5 to 30 minutes.
あるいは、ラミネート装置や、治具５１に発熱器をセッ
トした装置などを使用すれば、より短時間で硬化させる
ことができ、それらの方法を用いても良い。以上の作成
手順にて信頼性の高いワイヤーボンディグレス発光ダイ
オード表示装置を作成することができた。Alternatively, if a laminating device or a device in which a heat generator is set in the jig 51 is used, curing can be achieved in a shorter time, and these methods may also be used. A highly reliable wire bondless light emitting diode display device was able to be created using the above manufacturing procedure.
（発明の効果〉
本発明により、ワイヤーボンディグに要する作業コスト
を大幅に低減することをならしめるワイヤーボンディグ
レス方式に基づいた発光ダイオード表示装置が、電気的
、機械的に安定し、またフレキシブルプリント基板を使
用したものにおいても、屈曲させても断線の問題がない
形で実現できる。(Effects of the Invention) According to the present invention, a light emitting diode display device based on a wire bondingless method that significantly reduces the work cost required for wire bonding is electrically and mechanically stable, and is flexible printable. Even when a substrate is used, it can be realized even if it is bent without any problem of disconnection.
本発明において、プリント基板上のＬＥＤチップの配列
設置は、設計の自由度がきわめて大きいものであり、プ
リント基板の導電パターンを変えることで、ＬＥＤチッ
プを個別に、あるいはいくつかのグループ別としたセグ
メント方式として駆゛）′ｌ′Ｉ″ｆ！−″ｔｈ＜ｖｓ
ｓ・ ８発０発光’；ｆ４−Ｉ−−１’冫′表示装置は
、、インテリア用品、広告、自動車のストップランプ等
の表示用として最適であり、また特にフレキシブルプリ
ント基板のものでは、任意の曲面上に貼着して使用する
ことができる。In the present invention, the arrangement and installation of LED chips on a printed circuit board has an extremely large degree of freedom in design, and by changing the conductive pattern of the printed circuit board, the LED chips can be arranged individually or in several groups. Driven as a segment method ゛)′l′I″f!−″th<vs
The display device is ideal for displaying interior goods, advertisements, automobile stop lamps, etc., and is especially suitable for use with flexible printed circuit boards. Can be used by pasting it on curved surfaces.
第１図は本発明のワイヤーボンディングレス方式の一実
施例の構造の断面図を示し、第２図は従来のワイヤーボ
ンディング方式の構造の断面図、第３図ａ， ｂ，
ｃおよび第４図ｄ， ｅ、第５図は本発明の一実施
例を組み立てるための概略図である。
１１、ａ、２１・・・・プリント基板
１２ ２２ ３２、４１・・・ＬＥＤチップ１３、
Ｃ・・・透明導電性フィルム
１ ４、
ｌ ５、
２ ３、
１ ７、
２ ４、
２ ５、
５ １ ・
ｂ・・・絶縁性フイルム接着剤
３３・・・パンチ孔
３１・・・回路パターン
４２・・・電極
・ワイヤー
・樹脂
・治具
窮１田
一ｌFIG. 1 shows a sectional view of the structure of an embodiment of the wire bonding-less method of the present invention, FIG. 2 shows a sectional view of the structure of the conventional wire bonding method, and FIG. 3 a, b,
4c, 4d and 4e, and 5 are schematic diagrams for assembling an embodiment of the present invention. 11, a, 21... Printed circuit board 12 22 32, 41... LED chip 13,
C...Transparent conductive film 14, l5, 23, 17, 24, 25, 51 ・b...Insulating film adhesive 33...Punch hole 31...Circuit pattern 42...electrodes, wires, resins, jigs, etc.
Claims (5)
多数の発光ダイオードチップを配列設置した発光ダイオ
ード表示装置において、基板上の発光ダイオードチップ
の配置箇所と同じ箇所にパンチ孔を有する絶縁フィルム
から成るスペーサーを重ね合わせ、その上から透明導電
性フィルムを貼着して３つの層に積層し、パンチ孔を介
して発光ダイオードチップの上部オーミック電極と透明
導電性フィルムが接触された構造を有することを特徴と
する発光ダイオード表示装置。(1) In a light emitting diode display device in which a large number of light emitting diode chips are arranged and arranged on a substrate with a conductor portion formed on an insulating film or an insulating plate, punch holes are provided at the same locations as the locations on the substrate where the light emitting diode chips are arranged. A structure in which spacers made of insulating films are overlapped and a transparent conductive film is pasted on top of the spacers to form three layers, and the upper ohmic electrode of the light emitting diode chip and the transparent conductive film are in contact through punch holes. A light emitting diode display device comprising:
装置において、スペーサーである絶縁フィルムは絶縁性
接着剤であることを特徴とする発光ダイオード表示装置
。(2) The light emitting diode display device according to claim 1, wherein the insulating film serving as the spacer is an insulating adhesive.
装置において、透明導電性フィルムは有機ポリマーのフ
ィルムに、金または合金の薄膜を形成されてなることを
特徴とする発光ダイオード表示装置。(3) The light emitting diode display device according to claim 1, wherein the transparent conductive film is formed by forming a thin film of gold or an alloy on an organic polymer film.
装置において、絶縁性フィルム接着剤の厚さは、発光ダ
イオードチップの厚さよりも薄くして、透明導電性フィ
ルムに生じる張力にて発光ダイオードチップの上部オー
ミック電極と、透明導電性フィルムを加圧接触させて、
電気的導通を得ることを特徴とする発光ダイオード表示
装置。(4) In the light emitting diode display device according to claim 1, the thickness of the insulating film adhesive is thinner than the thickness of the light emitting diode chip, and the tension generated in the transparent conductive film causes the light emitting diode to be By bringing the upper ohmic electrode of the chip into contact with the transparent conductive film under pressure,
A light emitting diode display device characterized by obtaining electrical continuity.
装置において、発光ダイオードチップの透明導電性フィ
ルムに接触する上部オーミック電極は、チップのふちに
電極物質を盛り上げて形成し、中心点を電極非形成とす
る構造の電極を形成することを特徴とする発光ダイオー
ド表示装置。(5) In the light emitting diode display device according to claim 1, the upper ohmic electrode that comes into contact with the transparent conductive film of the light emitting diode chip is formed by mounding an electrode material on the edge of the chip, and the center point is the electrode material. A light emitting diode display device characterized in that an electrode is formed in a structure in which no electrode is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1156094A JPH0321983A (en) | 1989-06-19 | 1989-06-19 | Light emitting diode display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1156094A JPH0321983A (en) | 1989-06-19 | 1989-06-19 | Light emitting diode display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0321983A true JPH0321983A (en) | 1991-01-30 |
Family
ID=15620180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1156094A Pending JPH0321983A (en) | 1989-06-19 | 1989-06-19 | Light emitting diode display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0321983A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001082378A1 (en) * | 2000-04-20 | 2001-11-01 | Schott Glas | Carrier substrate for electronic components |
| JP2003504894A (en) * | 1999-07-09 | 2003-02-04 | インスティチュート オブ マテリアルズ リサーチ アンド エンジニアリング | Laminate to encapsulate the device |
| JP2004172578A (en) * | 2002-09-02 | 2004-06-17 | Matsushita Electric Ind Co Ltd | Light-emitting device |
| US7078737B2 (en) | 2002-09-02 | 2006-07-18 | Matsushita Electric Industrial Co., Ltd. | Light-emitting device |
| JP2007033662A (en) * | 2005-07-25 | 2007-02-08 | I K C Kk | Surface light emitter and internal illumination type signboard using the same |
| JP2009010204A (en) * | 2007-06-28 | 2009-01-15 | Nichia Corp | Light emitting device |
| JP2011096901A (en) * | 2009-10-30 | 2011-05-12 | Kitagawa Ind Co Ltd | Flexible led module and unit led module |
| JP2012084855A (en) * | 2010-09-13 | 2012-04-26 | Toshiba Hokuto Electronics Corp | Light-emitting device |
| WO2015147014A1 (en) * | 2014-03-27 | 2015-10-01 | オリンパス株式会社 | Display panel and electric apparatus |
| JP2017028190A (en) * | 2015-07-27 | 2017-02-02 | 大日本印刷株式会社 | Flexible substrate for led element |
| US9837587B2 (en) | 2013-03-28 | 2017-12-05 | Toshiba Hokuto Electronics Corporation | Light-emitting device with improved flexural resistance and electrical connection between layers, production method therefor, and device using light-emitting device |
| JP2019145801A (en) * | 2013-11-07 | 2019-08-29 | 東芝ホクト電子株式会社 | Light emitting device |
-
1989
- 1989-06-19 JP JP1156094A patent/JPH0321983A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003504894A (en) * | 1999-07-09 | 2003-02-04 | インスティチュート オブ マテリアルズ リサーチ アンド エンジニアリング | Laminate to encapsulate the device |
| WO2001082378A1 (en) * | 2000-04-20 | 2001-11-01 | Schott Glas | Carrier substrate for electronic components |
| JP2004172578A (en) * | 2002-09-02 | 2004-06-17 | Matsushita Electric Ind Co Ltd | Light-emitting device |
| US7078737B2 (en) | 2002-09-02 | 2006-07-18 | Matsushita Electric Industrial Co., Ltd. | Light-emitting device |
| JP4699828B2 (en) * | 2005-07-25 | 2011-06-15 | 訓次 三苫 | Surface light emitter and internally illuminated signboard using the same |
| JP2007033662A (en) * | 2005-07-25 | 2007-02-08 | I K C Kk | Surface light emitter and internal illumination type signboard using the same |
| JP2009010204A (en) * | 2007-06-28 | 2009-01-15 | Nichia Corp | Light emitting device |
| JP2011096901A (en) * | 2009-10-30 | 2011-05-12 | Kitagawa Ind Co Ltd | Flexible led module and unit led module |
| JP2012084855A (en) * | 2010-09-13 | 2012-04-26 | Toshiba Hokuto Electronics Corp | Light-emitting device |
| US9837587B2 (en) | 2013-03-28 | 2017-12-05 | Toshiba Hokuto Electronics Corporation | Light-emitting device with improved flexural resistance and electrical connection between layers, production method therefor, and device using light-emitting device |
| US11784290B2 (en) | 2013-03-28 | 2023-10-10 | Nichia Corporation | Light-emitting device with improved flexural resistance and electrical connection between layers, production method therefor, and device using light-emitting device |
| JP2019145801A (en) * | 2013-11-07 | 2019-08-29 | 東芝ホクト電子株式会社 | Light emitting device |
| WO2015147014A1 (en) * | 2014-03-27 | 2015-10-01 | オリンパス株式会社 | Display panel and electric apparatus |
| JP2017028190A (en) * | 2015-07-27 | 2017-02-02 | 大日本印刷株式会社 | Flexible substrate for led element |
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