JPS6115580B2 - - Google Patents

Info

Publication number
JPS6115580B2
JPS6115580B2 JP53045754A JP4575478A JPS6115580B2 JP S6115580 B2 JPS6115580 B2 JP S6115580B2 JP 53045754 A JP53045754 A JP 53045754A JP 4575478 A JP4575478 A JP 4575478A JP S6115580 B2 JPS6115580 B2 JP S6115580B2
Authority
JP
Japan
Prior art keywords
resin
metal film
film
bonding
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53045754A
Other languages
Japanese (ja)
Other versions
JPS54137971A (en
Inventor
Kenji Myajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP4575478A priority Critical patent/JPS54137971A/en
Publication of JPS54137971A publication Critical patent/JPS54137971A/en
Publication of JPS6115580B2 publication Critical patent/JPS6115580B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Description

【発明の詳細な説明】 本発明は樹脂フイルムと金属フイルムとの積層
体を半導体素子の支持基板として用いた樹脂封止
形半導体装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a resin-sealed semiconductor device using a laminate of a resin film and a metal film as a support substrate for a semiconductor element.

半導体装置は、薄くて小型のものが種々の用途
に望まれているが、そのような要請に応えるもの
として、半導体素子の支持基板を、厚みが薄くか
つ微細加工の可能な樹脂フイルムと金属フイルム
との積層体により構成したものがある。 Semiconductor devices are desired to be thin and compact for various purposes, and to meet these demands, support substrates for semiconductor elements are being made of resin films and metal films that are thin and can be microfabricated. There are some that are constructed from a laminate of

この種の半導体装置は支持基板が薄くかつ柔軟
性に富み、そして支持基板の主体を構成する樹脂
フイルムは他の絶縁材料に比較して安価であるた
め、特に発光素子表示装置や時計用大規模集積回
路装置として好ましく用いられる。上記樹脂フイ
ルムの樹脂としては一般にエポキシ、フエノー
ル、ポリアミド等が用いられるが、しかしこれら
の樹脂は耐熱性が低く、例えばエポキシで100
℃、フエノールで80℃、ポリアミドで200℃程度
で著しく軟化することが知られている。このよう
な樹脂フイルムの軟化は半導体装置の製造の一工
程であるワイヤボンデイング時に下記の如き不都
合を生ずる。即ち第１図ａに示すように金属フイ
ルム１、例えば表面が金又は銀メツキされた銅フ
イルムを樹脂フイルム２上に積層して成る支持基
板３を用意し、金属フイルム１にボンデイングワ
イヤ４を接合する場合、基板３をヒーター（図示
せず）上に載置して100℃〜300℃に加熱しながら
矢印で示すように上方からボンデイング工具の先
端であるキヤピラリイ５を下降させる。次の工程
において第１図ｂに示すように樹脂フイルム２は
上記温度において軟化しているため、樹脂フイル
ムはキヤピラリイ５の押圧力によつて大きくへこ
み、その過程において上記押圧力は樹脂フイルム
２でかなり吸収されてしまうため、ボンデイング
ワイヤ４と金属フイルム１との間の接合力が不足
し、ボンデイングミスが発生しやすくなり、これ
を防ぐためにはボンデイング時間を多く必要とす
る。 This type of semiconductor device has a thin and highly flexible supporting substrate, and the resin film that makes up the main component of the supporting substrate is inexpensive compared to other insulating materials, so it is especially suitable for large scale devices such as light emitting device display devices and watches. Preferably used as an integrated circuit device. Generally, epoxy, phenol, polyamide, etc. are used as the resin for the above resin film, but these resins have low heat resistance.
℃, phenol is known to soften significantly at 80℃, and polyamide at about 200℃. Such softening of the resin film causes the following inconvenience during wire bonding, which is one of the steps in manufacturing semiconductor devices. That is, as shown in FIG. 1A, a support substrate 3 is prepared in which a metal film 1, for example, a copper film whose surface is plated with gold or silver, is laminated on a resin film 2, and a bonding wire 4 is bonded to the metal film 1. In this case, the substrate 3 is placed on a heater (not shown) and heated to 100 DEG C. to 300 DEG C., while the capillary 5, which is the tip of the bonding tool, is lowered from above as shown by the arrow. In the next step, as shown in FIG. 1b, since the resin film 2 is softened at the above temperature, the resin film is greatly dented by the pressing force of the capillary 5, and in the process, the pressing force is applied to the resin film 2. Since the bonding wire 4 and the metal film 1 are absorbed considerably, the bonding force between the bonding wire 4 and the metal film 1 becomes insufficient, and bonding errors are likely to occur, and in order to prevent this, a long bonding time is required.

本発明はボンデイングミスの発生を防止し、確
実なワイヤボンデイングを短時間に実施可能な構
造の樹脂封止形半導体装置の提供を目的とする。 SUMMARY OF THE INVENTION An object of the present invention is to provide a resin-sealed semiconductor device having a structure that prevents bonding errors from occurring and allows reliable wire bonding to be performed in a short time.

以下本発明の一実施例を図面に基づいて説明す
る。 An embodiment of the present invention will be described below based on the drawings.

第２図において１１は選択的な除去によつて所
定のパターンに形成された厚さ20〜30μのポリア
ミド樹脂フイルムを示し、このフイルム１１上に
は同じく選択的な除去によつて所定のパターンに
形成された金属フイルム１２が圧着されており、
これら両者の積層体は支持基板１３を構成する。
金属フイルム１２は好ましくは金又は銀メツキさ
れた銅フイルムから成り、例えば金又は銀メツキ
の厚さは0.5〜3.0μ、銅フイルムの厚さは20〜30
μｍである。上記基板の形成は、プレスで所定形
状に打抜かれた樹脂フイルム１１を用意し、この
上に銅フイルム１２を圧着した後、この銅フイル
ム１２を所定パターンにエツチング除去し、つい
でこの銅フイルムを金又は銀メツキすることによ
り実施されてもよいし、又は樹脂フイルム１１に
金属フイルム１２を圧着した後に、両者をそれぞ
れ選択的にエツチング除去し、ついで銅フイルム
を金又は銀メツキすることにより実施されてもよ
い。このようにして形成された支持基板１３は半
導体素子の組立工程へ送られて、金属フイルム１
２上に接着剤１４を用いて半導体素子１５がマウ
ントされる。次にワイヤボンデイング工程、即ち
金属フイルム１２の上記選択的除去により形成さ
れた金属配線に相当する被ボンデイング部分１６
と半導体素子１５表面とをボンデイングワイヤ１
７の金線で接続する工程が実施される。この際、
支持基板は300〜340℃に加熱されるが、本発明に
おいては下記の理由により上述のような従来の欠
点は発生しない。即ち、図面に示すように金属フ
イルム１２の被ボンデイング部分１６の下側に
は、樹脂フイルム１１の上記選択的除去に基づい
て樹脂フイルム１１が存在しないため、キヤピラ
リイによつてボンデイングワイヤ１７と金属フイ
ルム１２に加えられる押圧力は金属フイルムを図
示しないヒーター上に押圧し、押圧力は直ちに最
大値に達し、そのため従来のように加熱により軟
化した樹脂フイルムによつて押圧力が吸収される
ことは全くない。したがつて確実なボンデイング
が短時間で実施可能となる。 In FIG. 2, reference numeral 11 indicates a polyamide resin film with a thickness of 20 to 30 μm formed into a predetermined pattern by selective removal. The formed metal film 12 is crimped,
A laminate of both of these constitutes the support substrate 13.
The metal film 12 is preferably made of a copper film plated with gold or silver, for example, the thickness of the gold or silver plating is 0.5 to 3.0 μm, and the thickness of the copper film is 20 to 30 μm.
It is μm. The above board is formed by preparing a resin film 11 punched into a predetermined shape using a press, pressing a copper film 12 onto it, etching away the copper film 12 in a predetermined pattern, and then removing the copper film with gold. Alternatively, it may be carried out by silver plating, or it may be carried out by press-bonding the metal film 12 to the resin film 11, selectively etching and removing both, and then plating the copper film with gold or silver. Good too. The support substrate 13 thus formed is sent to a semiconductor device assembly process, and the metal film 1
A semiconductor element 15 is mounted on 2 using an adhesive 14. Next, a wire bonding process is performed, that is, a portion 16 to be bonded corresponding to a metal wiring formed by the selective removal of the metal film 12.
and the surface of the semiconductor element 15 with bonding wire 1
Step 7 of connecting with gold wire is performed. On this occasion,
Although the support substrate is heated to 300 to 340°C, the above-mentioned conventional drawbacks do not occur in the present invention for the following reasons. That is, as shown in the drawings, since the resin film 11 is not present under the bonded portion 16 of the metal film 12 based on the selective removal of the resin film 11, the capillary connects the bonding wire 17 and the metal film. The pressing force applied at 12 presses the metal film onto a heater (not shown), and the pressing force immediately reaches its maximum value, so that the pressing force is never absorbed by the resin film softened by heating as in the conventional case. do not have. Therefore, reliable bonding can be performed in a short time.

次に半導体素子１５およびその周囲を樹脂１８
で封止して、製品の樹脂封止形半導体装置を得
る。上述の実施例においては樹脂フイルム１１は
金属フイルム１２の下側に接合しているが、第３
図に示すように金属フイルム１２の上側に接合し
てもよく、又は第４図に示すように金属フイルム
１２の上下両側に接合してもよい。もちろん第３
図および第４図に示す半導体装置においても、少
なくとも金属フイルム１２の被ボンデイング部分
１６の下側には樹脂フイルム１１が存在しないよ
うに樹脂フイルムが選択的に除去されており、こ
れにより上述した第２図の半導体装置と同じ効果
が得られる。なお第３図および第４図において第
２図と同一部分は同一符号を用いて示される。 Next, the semiconductor element 15 and its surroundings are covered with resin 18.
to obtain a resin-sealed semiconductor device as a product. In the above embodiment, the resin film 11 is bonded to the lower side of the metal film 12, but the third
As shown in the figure, it may be bonded to the upper side of the metal film 12, or as shown in FIG. 4, it may be bonded to both the upper and lower sides of the metal film 12. Of course the third
Also in the semiconductor device shown in FIG. 4 and FIG. 4, the resin film 11 is selectively removed so that the resin film 11 is not present at least below the bonded portion 16 of the metal film 12. The same effect as the semiconductor device shown in FIG. 2 can be obtained. Note that in FIGS. 3 and 4, the same parts as in FIG. 2 are indicated using the same symbols.

本発明は以上説明したように、樹脂フイルムに
金属フイルムを圧着して成る支持基板に半導体素
子をマウントし、ワイヤボンデイングを実施し、
そして樹脂封止して成る樹脂封止形半導体装置に
おいて、少なくとも上記金属フイルムの被ボンデ
イング部分の下側には樹脂フイルムが存在しない
ことを特徴とする。したがつてワイヤボンデイン
グ工程において、ボンデイング工具のキヤピラリ
イからの押圧力はボンデイングワイヤおよび金属
フイルムの被ボンデイング部分に有効に与えら
れ、短時間に確実なボンデイングが可能となり、
ボンデイングミスを防止できる。 As explained above, the present invention mounts a semiconductor element on a support substrate made by pressing a metal film onto a resin film, performs wire bonding,
The resin-sealed semiconductor device is characterized in that no resin film is present below at least the portion of the metal film to be bonded. Therefore, in the wire bonding process, the pressing force from the capillary of the bonding tool is effectively applied to the bonding wire and the part of the metal film to be bonded, making it possible to perform reliable bonding in a short time.
Bonding mistakes can be prevented.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図ａおよびｂは従来の樹脂封止形半導体装
置におけるワイヤボンデイング工程を説明する断
面図、第２図は本発明の樹脂封止形半導体装置の
一実施例の断面図、第３図および第４図それぞれ
は本発明の他の実施例装置の断面図である。 １１……樹脂フイルム、１２……金属フイル
ム、１３……支持基板、１５……半導体素子、１
６……金属フイルムの被ボンデイング部分、１７
……ボンデイングワイヤ、１８……封止樹脂。 1A and 1B are cross-sectional views illustrating the wire bonding process in a conventional resin-molded semiconductor device, FIG. 2 is a cross-sectional view of an embodiment of the resin-molded semiconductor device of the present invention, and FIGS. Each of FIGS. 4A and 4B is a sectional view of another embodiment of the device of the present invention. 11...Resin film, 12...Metal film, 13...Support substrate, 15...Semiconductor element, 1
6... Part of metal film to be bonded, 17
... Bonding wire, 18 ... Sealing resin.

Claims (1)

【特許請求の範囲】[Claims] １ 金属フイルムとこれを支持する樹脂フイルム
との積層体から成る支持基板と、この基板に固定
された半導体素子と、上記金属フイルムの被ボン
デイング部分と上記半導体素子とを接続するボン
デイングワイヤと、上記半導体素子およびその周
囲を封止する樹脂とを包含する樹脂封止形半導体
装置において、上記支持基板をヒーター上に載置
して上記金属フイルムの被ボンデイング部と上記
ボンデイングワイヤーとのボンデイングを行なう
に際し、上記金属フイルムの被ボンデイング部に
おいて、上記金属フイルムとボンデイングワイヤ
ーとが上記ヒーターとボンデイング装置のキヤピ
ラリーとによつて直接挾圧されるように、少なく
とも上記金属フイルムの被ボンデイング部分の下
側には樹脂フイルムが存在しないことを特徴とす
る樹脂封止形半導体装置。1. A supporting substrate consisting of a laminate of a metal film and a resin film supporting the same, a semiconductor element fixed to this substrate, a bonding wire connecting the bonded portion of the metal film and the semiconductor element, and the above-mentioned In a resin-sealed semiconductor device that includes a semiconductor element and a resin that seals the periphery of the semiconductor element, when the support substrate is placed on a heater and the part to be bonded of the metal film is bonded with the bonding wire. , at least the lower side of the bonding target portion of the metal film so that the metal film and the bonding wire are directly clamped by the heater and the capillary of the bonding device. A resin-encapsulated semiconductor device characterized by the absence of a resin film.
JP4575478A 1978-04-18 1978-04-18 Resin-sealed type semiconductor device Granted JPS54137971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4575478A JPS54137971A (en) 1978-04-18 1978-04-18 Resin-sealed type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4575478A JPS54137971A (en) 1978-04-18 1978-04-18 Resin-sealed type semiconductor device

Publications (2)

Publication Number Publication Date
JPS54137971A JPS54137971A (en) 1979-10-26
JPS6115580B2 true JPS6115580B2 (en) 1986-04-24

Family

ID=12728079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4575478A Granted JPS54137971A (en) 1978-04-18 1978-04-18 Resin-sealed type semiconductor device

Country Status (1)

Country Link
JP (1) JPS54137971A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01110742A (en) * 1987-10-23 1989-04-27 Ibiden Co Ltd Film carrier for mounting electronic component
JPH01183837A (en) * 1988-01-18 1989-07-21 Texas Instr Japan Ltd Semiconductor device
JP2794212B2 (en) * 1989-12-11 1998-09-03 イビデン株式会社 Substrate for mounting electronic components

Also Published As

Publication number Publication date
JPS54137971A (en) 1979-10-26

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