JP3472342B2 - Method of manufacturing semiconductor device package - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device mounting body.
The present invention relates to a manufacturing method , and more particularly, to improvement of a technique for mounting a semiconductor device face down.

[0002]

2. Description of the Related Art Conventionally, as a method of mounting a semiconductor device on a circuit board by face down, a protruding contact made of a soldering alloy is previously formed on an electrode pad of the semiconductor device by a plating technique, and this protruding contact is used. The method of soldering to the connection electrode of the circuit board has been used, but in recent years, a method of connecting the semiconductor device to the circuit board using a conductive adhesive is being used.

As a method of mounting a semiconductor device using such a conductive adhesive, for example, US Pat. No. 4,661,192 is used.
As disclosed in the publication, there is a technique for simply connecting a semiconductor device to a circuit board by face down using a conductive adhesive. Hereinafter, a conventional mounting technique of a semiconductor device will be described with reference to the drawings.

FIG. 3 is a diagram showing a part of the mounting process of the semiconductor device, showing the process of transferring the conductive adhesive to the protruding contacts of the semiconductor device. Further, FIG. 4 is a cross-sectional view of a main part of a semiconductor device package formed by the above-described process.

In FIGS. 3 and 4, 9 is a semiconductor device, 10 is a terminal electrode formed on a predetermined portion of the semiconductor device 9, 11 is a protruding contact made of a conductive material, formed on the terminal electrode 10. Reference numeral 12 is a coating film formed by applying a conductive epoxy resin, 13 is a supporting substrate, 14 is a circuit board, 15 is a connecting electrode on the circuit board, and 16 is a transfer portion formed by transferring the conductive epoxy resin to the protruding contact 10. Is.

The outline of a conventional semiconductor device mounting method using the above-described conductive adhesive and its mounting body will be described below.

First, a conductive epoxy resin coating film 10 is formed on a support base 13, and the semiconductor device 9 is connected to the protruding contact 1 from above the support base 13 as shown in FIG.
1 is lowered and the two are brought into contact with each other.
Then, the tip of the protruding contact 11 of the semiconductor device 9 is brought into contact with the coating film 12 of the conductive epoxy resin formed on the support base 13 to transfer the conductive epoxy resin to the protruding contact 11.

After that, the semiconductor device 9 in which the transfer portion 16 of the conductive epoxy resin is attached on the protruding contact 11 is aligned with the connection electrode 15 on the circuit board 14 and stacked, and then the conductive epoxy resin is cured. As a result, as shown in FIG. 4, a mounting body of the semiconductor device 9 using the conductive epoxy resin is obtained.

[0009]

However, in the mounting method of the semiconductor device and the mounting body thereof as described above,
Since a conductive epoxy resin is used as a conductive adhesive,
There is a problem that the time required to cure the conductive epoxy resin after the semiconductor device 9 is loaded on the circuit board 14 is long, and the productivity of the package of the semiconductor device 9 is low. That is, in general, 150 is required to cure the conductive epoxy resin.
This is because heat of about ° C and time of 1 hour or more are required.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a method of manufacturing a semiconductor device mounting body capable of easily mounting a semiconductor device on a circuit board with high productivity. To provide.

[0011]

Means for Solving the Problems In order to achieve the above-mentioned object, the means taken by the present invention is such that a connecting electrode made of a thermoplastic resin-curable conductive material is formed on a circuit board, and a semiconductor device is projected. This is a technique of thermocompression bonding the contact to the connection electrode.

Specifically, the means taken by the invention of claim 1 is as follows.
As a method for manufacturing a semiconductor device mounting body in which a semiconductor device is mounted face down on a circuit board, a step of forming a protruding contact on a terminal electrode of the semiconductor device and a circuit using the thermoplastic resin-curable conductive material A step of forming connection electrodes for mounting a semiconductor device on a metal wiring pattern having a flat surface on the substrate;
And a step of joining the semiconductor device and the circuit board by thermocompression bonding to the connection electrode on the metal wiring pattern having a flat surface .

The means taken by the invention of claim 2 is defined by claim 1.
In the invention, the step of forming the protruding contact on the terminal electrode of the semiconductor device is a method of forming the protruding contact by a plating method.

The means taken by the invention of claim 3 is the method of claim 1.
In the invention, the step of forming the protruding contact on the terminal electrode of the semiconductor device is a method of forming the protruding contact by a wire bonding method.

The means taken by the invention of claim 4 is the metal wiring pattern according to the invention of claim 1, 2 or 3.
Is a part of the circuit board that is made of sintered conductive material.
It is a method that has been formed .

The means taken by the invention of claim 5 is the metal wiring pattern according to the invention of claim 1, 2 or 3.
Is a part of the above circuit board using a metal foil of a conductive material.
It is a method that is formed in .

According to a sixth aspect of the invention, in the method of the first, second, third, fourth or fifth aspect of the invention, in the step of joining the semiconductor device and the circuit board, the semiconductor device is connected to a connection electrode of the circuit board. It is a method of heating to a temperature equal to or higher than the temperature at which is plastic.

According to a seventh aspect of the invention, in the method of the first, second, third, fourth or fifth aspect of the invention, in the step of joining the semiconductor device and the circuit board, the connection electrode of the circuit board is in a plastic state. It is a method of heating to a temperature equal to or higher than that.

According to the invention of claim 8, in the invention of claim 1, 2, 3, 4, 5, 6 or 7, at least a thermoplastic resin is used as the thermoplastic resin-curable conductive material. This is a method of using a material containing a conductive filler.

[0020]

According to the above method, in the invention of claim 1, the protruding contact of the semiconductor device mounted face down is bonded to the connection electrode of the circuit board made of the thermoplastic resin-curable conductive material by thermocompression bonding. The thermoplastic resin is hardened only by cooling and the mounting of the semiconductor device is completed in an extremely short time without requiring a long time for the reaction unlike the bonding using the thermosetting resin. Further, since the thermoplastic resin-curable conductive material is in a plastic state at a relatively low temperature, the thermal stress caused by the difference in thermal expansion coefficient between the semiconductor device and the circuit board can be suppressed to an extremely small level.

According to the second and third aspects of the present invention, the protruding contact of the semiconductor device is easily formed, and the adhesiveness between the protruding contact and the connection electrode of the circuit board made of the thermoplastic resin-curable conductive material becomes good. .

According to the fourth aspect of the invention, the method of manufacturing a mounting body suitable for a circuit board made of a material having high durability at high temperature such as ceramics is provided, and reliability is improved.

According to the invention of claim 5, a method of manufacturing a mounting body suitable for a circuit board made of a resin material such as glass epoxy.
Method , which reduces manufacturing costs.

According to the sixth and seventh aspects of the invention, the thermoplastic conductive resin curable material forming the connection electrode is easily maintained in a plastic state, and thermocompression bonding is smoothly performed. At that time, it is possible to perform heating by using a tool for adsorbing the semiconductor device or a support member for the circuit board, and the structure of the device is simplified.

According to the eighth aspect of the present invention, the function required for the connection electrode is easily ensured by the conductive filler of the thermoplastic resin.

[0026]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device mounting process according to an embodiment of the present invention and a resulting semiconductor device mounting body will be described below with reference to the drawings.

FIGS. 1A to 1C are process drawings for explaining a method of mounting a semiconductor device according to an embodiment, and FIG. 2 is a cross-sectional view of a main part of a semiconductor device mounting body manufactured by the mounting method of FIG. Is.

In FIGS. 1 and 2, 1 is a semiconductor device, 2 is a terminal electrode formed on a predetermined portion of the semiconductor device 1, 3 is a protruding contact formed on the terminal electrode 2, and 4 is a circuit board. Reference numeral 5 is a wiring pattern made of a sintered conductive material formed at a predetermined portion of the circuit board 4, 6 is a connecting electrode made of a thermoplastic resin-curable conductive material, and 7 is a thermocompression bonding tool. In this embodiment, as the thermoplastic resin-curable conductive material, a thermoplastic resin such as polyester resin containing a conductive filler such as Ag is used.

A method of mounting the semiconductor device configured as described above and a mounting body thereof will be described below with reference to the drawings.

First, as shown in FIG. 1A, a protruding contact 3 is formed on the terminal electrode 2 of the semiconductor device 1 by a known method. A plating method, a wire bonding method, or the like can be used to form the protruding contact 3. It is desirable that the protruding contact 3 has no oxide film on its surface, and Au is the most suitable material.

On the other hand, as shown in FIG. 1B, after a wiring pattern 5 is formed of a sintered conductive material on a circuit board 4 made of ceramic, the wiring pattern 5 of a sintered conductive material is formed on the wiring pattern 5. Then, the connection electrode 6 for mounting the semiconductor device, which is made of a thermoplastic resin-curable conductive material, is formed. A screen printing method, a transfer method, or the like can be used to form the connection electrode 6. When the circuit board 4 is made of a resin base material such as glass epoxy, the wiring pattern 5 formed on the circuit board 4 is formed by using a metal foil such as Cu,
The connection electrode 6 for mounting the semiconductor device may be formed by printing a thermoplastic resin-curable conductive material on it.

Next, as shown in FIG. 1C, the semiconductor device 1 is lowered from above the circuit board 4 while adsorbing and holding the semiconductor device 1 from the backside by the thermocompression bonding tool 7, and the protruding contact 3 of the semiconductor device 1 and the circuit. After the connection electrodes of the substrate 4 are aligned and brought into contact with each other, the semiconductor device 1 is pressed from the backside while being heated by the thermocompression bonding tool 7. At this time, by heating the resin-curable conductive material forming the connection electrode 6 to a temperature equal to or higher than a temperature at which the resin-curable conductive material is in a plastic state, the surface of the protruding contact 3 of the semiconductor device 1 is cured of the thermoplastic resin in a plastic state The mold conductive material adheres.

After that, when the thermocompression bonding tool 7 is separated from the semiconductor device 3, the thermoplastic resin-curable conductive material is cooled and cured in a short time, and the two are joined. Then, as shown in FIG. 2, a mounting body of the semiconductor device 1 in which the protruding contacts 3 of the semiconductor device 1 and the connection electrodes 6 of the circuit board 4 made of a thermoplastic resin-curable conductive material are joined together Obtainable.

In the above embodiment, the connection electrode 6 for mounting the semiconductor device on the circuit board 4 is formed of the thermoplastic resin-curable conductive material, so that the semiconductor device 1 is mounted on the circuit board 4. At this time, unlike a thermosetting resin, it does not take a long time for the reaction, and upon cooling, the resin is rapidly cured to complete the joining. Therefore, a face-down semiconductor device package can be obtained with high productivity.

Further, in the above embodiment, since the semiconductor device 1 is mounted on the circuit board 4 by using the thermoplastic resin-curable conductive material, the difference in the thermal expansion coefficient between the semiconductor device 1 and the circuit board 4 is caused. The thermal stress generated can be suppressed to an extremely small level, and a highly reliable semiconductor device package can be obtained.

In the above embodiment, when the semiconductor device 1 is mounted, the semiconductor device 1 is heated by the thermocompression bonding tool 7 in the thermocompression bonding process, but the present invention is not limited to this embodiment. is not. The thermocompression bonding may be performed, for example, in a state where the circuit board 4 is heated to the circuit board 4, or only the connection electrode 6 and its vicinity may be heated by irradiating infrared rays.

Further, in the above embodiment, as the thermoplastic resin-curable conductive material, a thermoplastic resin such as polyester resin containing a conductive filler such as Ag is used. Any conductive material may be used.

[0038]

As described above, according to the method for manufacturing a semiconductor device mounting body of the present invention, the semiconductor contact mounted on the circuit board is made of a thermoplastic resin-curable conductive material on the circuit board. for joining by thermocompression bonding connection electrodes of use, it reduces the time required for enough engineering, it is possible to improve the implementation of the productivity of the semiconductor device.

Further, since the heating temperature for thermocompression bonding is relatively low, the thermal stress due to the difference in thermal expansion coefficient between the semiconductor device and the circuit board can be suppressed to an extremely small level,
Therefore, the reliability can be improved.

[Brief description of drawings]

FIG. 1 is a partial cross-sectional view showing a state of a semiconductor device or the like in a mounting process of a semiconductor device according to an embodiment.

FIG. 2 is a partial cross-sectional view of a mounted body of a semiconductor device in an example.

FIG. 3 is a partial cross-sectional view showing a state when a conductive adhesive is transferred to a protruding contact of a semiconductor device in a conventional semiconductor device mounting method.

FIG. 4 is a partial cross-sectional view of a mounting body obtained by a conventional semiconductor device mounting method.

[Explanation of symbols]

1 Semiconductor device 2 terminal electrode 3 protruding contact 4 circuit board 5 wiring patterns 6 connection electrodes 7 Thermocompression bonding tool 9 Semiconductor devices 10 terminal electrodes 11 protruding contact 12 coating 13 Support substrate 14 circuit board 15 Connection electrode 16 Transfer part

   ─────────────────────────────────────────────────── ─── Continued front page       (56) Reference JP-A-6-61305 (JP, A)                 JP 63-287026 (JP, A)                 JP-A-5-21523 (JP, A)                 JP-A-4-37146 (JP, A)                 JP-A-5-283480 (JP, A)                 JP-A-5-36760 (JP, A)

Claims (8)

(57) [Claims] 1. A semiconductor device mounting method for mounting a semiconductor device face down on a circuit board, comprising the steps of forming a protruding contact on a terminal electrode of the semiconductor device, and using a thermoplastic resin-curable conductive material. a step of the surface of the circuit board to form a connection electrode for the semiconductor device mounted on a flat metal wiring pattern, a protruding contact point of the semiconductor device the surface of the circuit board flat
And a step of joining the semiconductor device and the circuit board by thermocompression bonding to the connection electrode on the metal wiring pattern. 2. The semiconductor device mounting method according to claim 1, wherein in the step of forming the protruding contact on the terminal electrode of the semiconductor device, the protruding contact is formed by a plating method. Manufacturing method of mounting body of. 3. The semiconductor device mounting method according to claim 1, wherein in the step of forming the protruding contact on the terminal electrode of the semiconductor device, the protruding contact is formed by a wire bonding method. A method for manufacturing a device assembly. 4. The method for manufacturing a semiconductor device package according to claim 1, 2, or 3, wherein the metal wiring pattern is formed at one portion of the circuit board by using a sintered conductive material. A method for manufacturing a semiconductor device package, comprising: 5. The method for manufacturing a semiconductor device package according to claim 1, 2, or 3, wherein the metal wiring pattern is formed on a part of the circuit board by using a metal foil of a conductive material. A method for manufacturing a semiconductor device package, comprising: 6. The method of manufacturing a semiconductor device package according to claim 1, 2, 3, 4, or 5, wherein in the step of joining the semiconductor device and the circuit board, the semiconductor device is connected to a connection electrode of the circuit board. A method for manufacturing a semiconductor device package, comprising heating to a temperature not lower than a plastic state. 7. The method of manufacturing a semiconductor device package according to claim 1, 2, 3, 4, or 5, wherein in the step of joining the semiconductor device and the circuit board, the connection electrode of the circuit board is in a plastic state. A method for manufacturing a semiconductor device package, comprising heating the semiconductor device to a temperature equal to or higher than the following temperature. 8. The method for manufacturing a semiconductor device mounting body according to claim 1, 2, 3, 4, 5, 6 or 7, wherein at least a thermoplastic resin and a conductive material are used as the thermoplastic resin-curable conductive material. A method of manufacturing a semiconductor device package, comprising using a material containing a conductive filler.