JP3255796B2 - Semiconductor device mounting method - Google Patents

Semiconductor device mounting method

Info

Publication number
JP3255796B2
JP3255796B2 JP11254694A JP11254694A JP3255796B2 JP 3255796 B2 JP3255796 B2 JP 3255796B2 JP 11254694 A JP11254694 A JP 11254694A JP 11254694 A JP11254694 A JP 11254694A JP 3255796 B2 JP3255796 B2 JP 3255796B2
Authority
JP
Japan
Prior art keywords
semiconductor device
conductive adhesive
circuit board
mounting
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP11254694A
Other languages
Japanese (ja)
Other versions
JPH07321148A (en
Inventor
芳宏 別所
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP11254694A priority Critical patent/JP3255796B2/en
Publication of JPH07321148A publication Critical patent/JPH07321148A/en
Application granted granted Critical
Publication of JP3255796B2 publication Critical patent/JP3255796B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/118Post-treatment of the bump connector
    • H01L2224/1182Applying permanent coating, e.g. in-situ coating
    • H01L2224/11822Applying permanent coating, e.g. in-situ coating by dipping, e.g. in a solder bath
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives

Landscapes

  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、半導体装置の実装方法
に係り、特にフェースダウンで導電性接着剤により半導
体装置を実装する技術の改良に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for mounting a semiconductor device, and more particularly to an improvement in a technique for mounting a semiconductor device face down using a conductive adhesive.

【0002】[0002]

【従来の技術】従来、フェースダウンによる半導体装置
の回路基板への実装方法としては、あらかじめメッキ技
術により半導体装置の電極パッド上に半田用合金からな
る突出接点を形成しておき、この突出接点を回路基板の
接続電極に半田付けする方法が用いられていたが、近年
では導電性接着剤を用いて半導体装置を回路基板に接続
する方法が用いられつつある。
2. Description of the Related Art Conventionally, as a method of mounting a semiconductor device on a circuit board by face-down, a projecting contact made of a solder alloy is previously formed on an electrode pad of the semiconductor device by a plating technique, and this projecting contact is formed. Although a method of soldering to a connection electrode of a circuit board has been used, in recent years, a method of connecting a semiconductor device to a circuit board using a conductive adhesive has been used.

【0003】このような導電性接着剤を用いた半導体装
置の実装方法として、例えば米国特許第4661192
号公報に開示されるように、導電性接着剤を用いてフェ
ースダウンにより半導体装置を回路基板に簡易的に接続
する技術がある。以下、図面を参照しながら、従来の半
導体装置の実装技術について説明する。
As a method of mounting a semiconductor device using such a conductive adhesive, for example, US Pat. No. 4,661,192.
As disclosed in Japanese Patent Application Laid-Open Publication No. H10-209, there is a technique for simply connecting a semiconductor device to a circuit board by face down using a conductive adhesive. Hereinafter, a conventional mounting technique of a semiconductor device will be described with reference to the drawings.

【0004】図3は、半導体装置の実装工程の一部を示
し、半導体装置の突出接点に導電性接着剤を転写する工
程を示す図である。また、図4は、上述の工程によって
形成される半導体装置の実装体の要部断面図である。
FIG. 3 is a view showing a part of a mounting process of a semiconductor device and showing a process of transferring a conductive adhesive to a projecting contact of the semiconductor device. FIG. 4 is a cross-sectional view of a main part of a semiconductor device mounted body formed by the above-described steps.

【0005】図3および図4において、9は半導体装
置、10は半導体装置9上の所定部位に形成された端子
電極、11は該端子電極10上に形成された突出接点、
12は導電性エポキシ樹脂を塗布してなる塗膜、13は
支持基体、14は回路基板、15は該回路基板14上の
接続電極、16は導電性エポキシ樹脂を突出接点10に
転写してなる転写部である。
3 and 4, reference numeral 9 denotes a semiconductor device, 10 denotes a terminal electrode formed on a predetermined portion of the semiconductor device 9, 11 denotes a projecting contact formed on the terminal electrode 10,
12 is a coating film formed by applying a conductive epoxy resin, 13 is a support base, 14 is a circuit board, 15 is a connection electrode on the circuit board 14, and 16 is a conductive epoxy resin transferred to the projecting contact 10. This is the transfer unit.

【0006】以上のように構成された従来の導電性接着
剤を用いた半導体装置の実装方法について、以下その概
略を説明する。
An outline of a conventional method for mounting a semiconductor device using a conductive adhesive configured as described above will be described below.

【0007】まず、支持基体13の上に導電性エポキシ
樹脂の塗膜10を形成しておき、図3に示すように、こ
の支持基体13の上方から、半導体装置9を突出接点1
1を下方にした状態で下降させて、両者を接触させる。
そして、半導体装置9の突出接点11の先端を支持基体
13上に形成した導電性エポキシ樹脂の塗膜12に接触
させることにより、突出接点11に導電性エポキシ樹脂
を転写する。
First, a coating film 10 of a conductive epoxy resin is formed on a support base 13, and as shown in FIG.
1 is lowered, and both are brought into contact with each other.
Then, the tip of the projecting contact 11 of the semiconductor device 9 is brought into contact with the conductive epoxy resin coating film 12 formed on the support base 13, thereby transferring the conductive epoxy resin to the projecting contact 11.

【0008】その後、突出接点11上に導電性エポキシ
樹脂の転写部16を付着した半導体装置9を、回路基板
14上の接続電極15に位置合わせして積載した後、導
電性エポキシ樹脂を硬化させることにより、図4に示す
ように、導電性エポキシ樹脂を用いた半導体装置9の実
装体を得るものである。
After that, the semiconductor device 9 having the transfer portion 16 of the conductive epoxy resin adhered on the protruding contact 11 is positioned and mounted on the connection electrode 15 on the circuit board 14, and then the conductive epoxy resin is cured. Thereby, as shown in FIG. 4, a package of the semiconductor device 9 using the conductive epoxy resin is obtained.

【0009】[0009]

【発明が解決しようとする課題】しかしながら、上記の
ような半導体装置の実装方法においては、導電性接着剤
として導電性エポキシ樹脂を用いるため、半導体装置9
を回路基板14に積載した後に導電性エポキシ樹脂を硬
化するのに必要な時間が長く、半導体装置9の実装体の
生産性に欠けるという問題があった。すなわち、一般的
に、導電性エポキシ樹脂の硬化には150℃程度の熱と
1時間以上の時間が必要となるからである。
However, in the above-described method for mounting a semiconductor device, since the conductive epoxy resin is used as the conductive adhesive, the semiconductor device 9 is not used.
The time required for curing the conductive epoxy resin after mounting on the circuit board 14 is long, and there is a problem that the productivity of the mounted body of the semiconductor device 9 is lacking. That is, in general, the curing of the conductive epoxy resin requires about 150 ° C. heat and one hour or more.

【0010】本発明は上記の課題に鑑みてなされたもの
であり、その目的とするところは、半導体装置を回路基
板に生産性良く簡易的に実装することのできる半導体装
置の実装方法を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor device mounting method capable of easily mounting a semiconductor device on a circuit board with good productivity. It is in.

【0011】[0011]

【課題を解決するための手段】上記目的を達成するた
め、本発明の講じた解決手段は、導電性接着剤を構成す
る樹脂として熱可塑性の導電性接着剤を用いることにあ
る。
Means for Solving the Problems In order to achieve the above object, a solution taken by the present invention is to use a thermoplastic conductive adhesive as a resin constituting the conductive adhesive.

【0012】具体的に、請求項1の発明の講じた手段
は、突出接点を有する半導体装置をフェースダウンで導
電性接着剤を用いて回路基板に実装する半導体装置の実
装方法として、熱可塑性の導電性接着剤の塗膜を支持基
体上に形成する工程と、上記支持基体上の導電性接着剤
を加熱して可塑状態に維持しながら、上記半導体装置の
突出接点を上記支持基体上の導電性接着剤の塗膜に接触
させて、突出接点に熱可塑性の導電性接着剤を転写する
工程と、上記工程で形成された導電性接着剤の転写部を
可塑状態に維持しながら半導体装置の突出接点と回路基
板の接続電極とを接触させる工程と、上記半導体装置の
突出接点を回路基板の接続電極とを接触させた状態で導
電性接着剤を冷却して両者を接着する工程とを設けた方
法である。
More specifically, the means adopted in the first aspect of the present invention is a method for mounting a semiconductor device having a projecting contact face-down on a circuit board by using a conductive adhesive in a face-down manner. Forming a coating film of a conductive adhesive on the support base; and heating the conductive adhesive on the support base to maintain the plastic state in a plastic state, thereby connecting the projecting contact of the semiconductor device to the conductive base on the support base. A step of transferring the thermoplastic conductive adhesive to the protruding contact by contacting the coating with the conductive adhesive, and maintaining the transfer portion of the conductive adhesive formed in the above step in a plastic state. A step of contacting the protruding contact with the connection electrode of the circuit board; and a step of cooling the conductive adhesive while the protruding contact of the semiconductor device is in contact with the connection electrode of the circuit board, and bonding the two. It is a method.

【0013】請求項2の発明の講じた手段は、請求項1
の発明において、上記半導体装置の突出接点に導電性接
着剤を転写する工程では、半導体装置を導電性接着剤が
可塑状態となる温度以上の温度に加熱する方法である。
Means taken by the invention of claim 2 is claim 1
In the invention, the step of transferring the conductive adhesive to the projecting contact of the semiconductor device is a method of heating the semiconductor device to a temperature equal to or higher than a temperature at which the conductive adhesive becomes a plastic state.

【0014】請求項3の発明の講じた手段は、請求項1
又は2の発明において、上記半導体装置の突出接点を回
路基板の接続電極に接触させる工程では、半導体装置を
導電性接着剤が可塑状態となる温度以上の温度に加熱す
る方法である。
[0014] The measures taken by the invention of claim 3 correspond to claim 1.
Alternatively, in the second aspect, the step of contacting the projecting contact of the semiconductor device with the connection electrode of the circuit board is a method of heating the semiconductor device to a temperature equal to or higher than a temperature at which the conductive adhesive becomes a plastic state.

【0015】請求項4の発明の講じた手段は、請求項1
又は2の発明において、半導体装置の突出接点を回路基
板の接続電極に接触させる工程では、回路基板を導電性
接着剤が可塑状態となる温度以上の温度に加熱する方法
である。
[0015] The means adopted by the invention of claim 4 corresponds to claim 1.
Alternatively, in the second aspect, the step of contacting the projecting contact of the semiconductor device with the connection electrode of the circuit board is a method of heating the circuit board to a temperature equal to or higher than a temperature at which the conductive adhesive becomes a plastic state.

【0016】請求項5の発明の講じた手段は、請求項
1,2,3又は4の発明において、上記導電性接着剤
に、少なくとも熱可塑性樹脂と導電性フィラーとを含ま
せる方法である。
According to a fifth aspect of the present invention, there is provided a method according to the first, second, third or fourth aspect, wherein the conductive adhesive contains at least a thermoplastic resin and a conductive filler.

【0017】請求項6の発明の講じた手段は、請求項
1,2,3,4又は5の発明において、上記半導体装置
の突出接点を二段突出形状とする方法である。
According to a sixth aspect of the present invention, there is provided a method as set forth in the first, second, third, fourth or fifth aspect of the present invention, wherein the projecting contact of the semiconductor device has a two-step projecting shape.

【0018】[0018]

【作用】以上の方法により、請求項1の発明では、半導
体装置の突出接点に転写された導電性接着剤を介して、
半導体装置の突出接点と回路基板の接続電極とが固着さ
れる。その際、導電性接着剤が熱可塑性樹脂で構成され
ているので、単に冷却するだけで導電性接着剤が硬化
し、両者が接着される。したがって、熱硬化性樹脂のご
とく反応による硬化に長時間を要することがなく、工程
に要する時間が短縮される。しかも、熱可塑性樹脂を可
塑状態に維持するためには、熱硬化性樹脂を硬化させる
時ほどの高温に維持する必要がないので、半導体装置と
回路基板との熱膨張率の差に起因する熱応力も極めて小
さくなり、実装された半導体装置の信頼性が向上する。
According to the above method, in the first aspect of the present invention, the conductive adhesive transferred to the protruding contact of the semiconductor device is used.
The projecting contact of the semiconductor device and the connection electrode of the circuit board are fixed. At this time, since the conductive adhesive is made of a thermoplastic resin, the conductive adhesive is hardened only by cooling, and both are bonded. Therefore, unlike the thermosetting resin, it does not require a long time for curing by the reaction, and the time required for the process is reduced. Moreover, in order to maintain the thermoplastic resin in a plasticized state, it is not necessary to maintain the thermoplastic resin at a temperature as high as when the thermosetting resin is cured. The stress is also extremely small, and the reliability of the mounted semiconductor device is improved.

【0019】請求項2の発明では、半導体装置の突出接
点に導電性接着剤を転写する際、半導体装置が可塑状態
となる温度以上に加熱されることで、突出接点が熱可塑
性の導電性接着剤を転写可能な温度に維持され、転写が
円滑に行われる。
According to the second aspect of the present invention, when the conductive adhesive is transferred to the protruding contact of the semiconductor device, the protruding contact is heated to a temperature higher than a temperature at which the semiconductor device becomes plastic, so that the protruding contact is made of thermoplastic conductive adhesive. The temperature is maintained at a temperature at which the agent can be transferred, and the transfer is performed smoothly.

【0020】請求項3又は4の発明では、半導体装置の
突出接点と回路基板の接続電極とを接触させる際、半導
体装置又は回路基板が熱可塑温度以上に加熱されること
で、熱可塑性の導電性接着剤が可塑状態に維持され、接
続電極側にも接着剤が付着する。その際、半導体装置を
吸着するツールや回路基板の支持部材を利用して加熱を
行うことが可能となり、装置の構成が簡素化される。
According to the third or fourth aspect of the present invention, when the projecting contact of the semiconductor device is brought into contact with the connection electrode of the circuit board, the semiconductor device or the circuit board is heated to a thermoplastic temperature or higher, so that the thermoplastic conductive material is heated. The conductive adhesive is maintained in a plastic state, and the adhesive also adheres to the connection electrode side. At this time, heating can be performed using a tool for holding the semiconductor device or a support member for the circuit board, and the configuration of the device is simplified.

【0021】請求項5の発明では、熱可塑性樹脂と導電
性フィラーとによって導電性接着剤の機能が簡易に確保
される。
According to the fifth aspect of the present invention, the function of the conductive adhesive is easily ensured by the thermoplastic resin and the conductive filler.

【0022】請求項6の発明では、突出接点が二段突出
形状を有することで、熱可塑性の導電性接着剤の冷却が
より短時間に完了することになる。
According to the sixth aspect of the present invention, since the projecting contact has a two-step projecting shape, cooling of the thermoplastic conductive adhesive can be completed in a shorter time.

【0023】[0023]

【実施例】以下、本発明の実施例に係る半導体装置の実
装工程について、図面を参照しながら説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a mounting process of a semiconductor device according to an embodiment of the present invention will be described with reference to the drawings.

【0024】図1(a)〜(c)は実施例における半導
体装置の実装方法を説明する工程図、図2は上記図1の
実装方法により作製される半導体装置の実装体の要部断
面図である。
1A to 1C are process diagrams for explaining a method of mounting a semiconductor device in an embodiment, and FIG. 2 is a cross-sectional view of a main part of a mounted body of the semiconductor device manufactured by the mounting method of FIG. It is.

【0025】図1および図2において、1は可塑状態に
ある熱可塑性の導電性接着剤の塗膜、2は加熱された支
持基体、3は半導体装置、4は半導体装置の端子電極上
に形成された突出接点、5は半導体装置3を加熱および
吸着するための加熱・吸着ツール、6は回路基板、7は
回路基板6の上の接続電極、8は熱可塑性の導電性接着
剤の転写部である。ここで、上記熱可塑性の導電性接着
剤1は、ポリエステル樹脂などの熱可塑性樹脂にAgな
どの導電フィラーを含んだものである。
In FIGS. 1 and 2, 1 is a coating film of a thermoplastic conductive adhesive in a plastic state, 2 is a heated support base, 3 is a semiconductor device, and 4 is formed on a terminal electrode of the semiconductor device. 5 is a heating / suction tool for heating and sucking the semiconductor device 3, 6 is a circuit board, 7 is a connection electrode on the circuit board 6, and 8 is a transfer portion of a thermoplastic conductive adhesive. It is. Here, the thermoplastic conductive adhesive 1 is a thermoplastic resin such as a polyester resin containing a conductive filler such as Ag.

【0026】以上のように構成された半導体装置の実装
方法とその実装体について、以下図面を用いて説明す
る。
A method of mounting the semiconductor device configured as described above and a mounted body thereof will be described below with reference to the drawings.

【0027】まず、図1(a)に示すように、支持基体
2上に可塑化した熱可塑性の導電性接着剤からなる塗膜
1を形成する。このとき、支持基体2は、熱可塑性の導
電性接着剤が可塑状態となる温度以上の温度に加熱され
ている。
First, as shown in FIG. 1A, a coating film 1 made of a plasticized thermoplastic conductive adhesive is formed on a support base 2. At this time, the support base 2 is heated to a temperature equal to or higher than the temperature at which the thermoplastic conductive adhesive becomes a plastic state.

【0028】そして、図1(b)に示すように、突出接
点4を有する半導体装置3を加熱・吸着ツール5により
吸着しながら、突出接点4を可塑状態にある導電性接着
剤の塗膜1に接触させる。そのとき、加熱・吸着ツール
2によって半導体装置3は導電性接着剤が可塑状態とな
る温度以上の温度まで加熱されている。その後、半導体
装置3を加熱・吸着ツール5により引き上げると、突出
接点4上に熱可塑性の導電性接着剤の一部が転写され、
転写部8が形成される。
Then, as shown in FIG. 1B, while the semiconductor device 3 having the projecting contacts 4 is attracted by the heating / suction tool 5, the projecting contacts 4 are coated with the conductive adhesive coating film 1 in a plastic state. Contact. At this time, the semiconductor device 3 is heated by the heating and suction tool 2 to a temperature equal to or higher than a temperature at which the conductive adhesive becomes a plastic state. Thereafter, when the semiconductor device 3 is pulled up by the heating and suction tool 5, a part of the thermoplastic conductive adhesive is transferred onto the projecting contact 4,
The transfer section 8 is formed.

【0029】つぎに、図1(c)に示すように、加熱・
吸着ツール5で半導体装置3を吸着しながら半導体装置
3を下方に下降させ、先端に導電性接着剤の転写部8が
形成された突出接点4を、回路基板6上の接続電極7に
位置合わせして両者を接触させる。このとき、導電性接
着剤の転写部8は加熱され可塑状態であるので、導電性
接着剤が接続電極7の表面に付着する。
Next, as shown in FIG.
The semiconductor device 3 is lowered while sucking the semiconductor device 3 with the suction tool 5, and the protruding contact 4 having the transfer portion 8 of the conductive adhesive formed at the tip is aligned with the connection electrode 7 on the circuit board 6. To bring them into contact. At this time, since the transfer portion 8 of the conductive adhesive is heated and is in a plastic state, the conductive adhesive adheres to the surface of the connection electrode 7.

【0030】その後、加熱・吸着ツール5を半導体装置
3から離すと、熱可塑性の導電性接着剤の転写部8が冷
却されて硬化し、図2に示すように、半導体装置3の突
出接点4と回路基板6の接続電極7とが熱可塑性の導電
性接着剤の転写部8によって接着される。つまり、半導
体装置の実装体が得られる。
Thereafter, when the heating / suction tool 5 is separated from the semiconductor device 3, the transfer portion 8 of the thermoplastic conductive adhesive is cooled and hardened, and as shown in FIG. And the connection electrode 7 of the circuit board 6 are bonded by a transfer portion 8 of a thermoplastic conductive adhesive. That is, a semiconductor device package is obtained.

【0031】上記実施例では、あらかじめ可塑化された
熱可塑性の導電性接着剤を用いて半導体装置と回路基板
を接合するために、半導体装置を回路基板に実装する際
に導電性接着剤を短時間で硬化させることができる。し
たがって、導電性接着剤を用いた半導体装置の実装体の
生産性が向上するとともにコストが低減する。
In the above embodiment, since the semiconductor device and the circuit board are joined by using a thermoplastic conductive adhesive which has been plasticized in advance, the conductive adhesive is shortened when the semiconductor device is mounted on the circuit board. Can be cured in time. Therefore, the productivity of the semiconductor device package using the conductive adhesive is improved and the cost is reduced.

【0032】また、このように半導体装置を回路基板に
導電性接着剤を用いて実装するために、半導体装置と回
路基板の熱膨張係数の差により生ずる熱応力を極めて小
さく抑制することができ、信頼性の高い半導体装置の実
装体を得ることができる。
Further, since the semiconductor device is mounted on the circuit board using the conductive adhesive as described above, the thermal stress caused by the difference in the coefficient of thermal expansion between the semiconductor device and the circuit board can be suppressed to a very small value. A highly reliable semiconductor device package can be obtained.

【0033】なお、本実施例では、回路基板6へ半導体
装置3を実装する際に、加熱・吸着ツール5によって半
導体装置3を加熱するようにしたが、吸着ツールによっ
て半導体装置3を加熱することなく吸着するのみとして
もよい。その場合、回路基板6を加熱してもよく、さら
に、赤外線を照射する等他の加熱手段によって熱可塑性
の導電性接着剤を加熱することも可能である。
In the present embodiment, when the semiconductor device 3 is mounted on the circuit board 6, the semiconductor device 3 is heated by the heating / suction tool 5, but the semiconductor device 3 is heated by the suction tool. Alternatively, only the adsorption may be performed. In this case, the circuit board 6 may be heated, and the thermoplastic conductive adhesive may be heated by another heating means such as irradiation of infrared rays.

【0034】また、上記実施例では、熱可塑性の導電性
接着剤として、ポリエステル樹脂にAgなどの導電フィ
ラーを含んだものを用いたが、本発明の導電性接着剤は
かかる実施例に限定されるものではなく、熱可塑性と導
電性とを有するものであればいかなるものでもよい。
In the above embodiment, a thermoplastic resin containing a conductive filler such as Ag in a polyester resin was used as the thermoplastic conductive adhesive. However, the conductive adhesive of the present invention is not limited to this embodiment. However, any material having thermoplasticity and conductivity may be used.

【0035】さらに、上記実施例では、突出接点4の形
状は単純な円柱状としたが、特に二段形状とすること
で、導電性接着剤の転写部8をより迅速に冷却させるこ
とができ、硬化時間を短縮することができる。
Further, in the above-mentioned embodiment, the shape of the projecting contact 4 is a simple columnar shape. However, by particularly forming the projecting contact 4 into a two-stage shape, the transfer portion 8 of the conductive adhesive can be cooled more quickly. The curing time can be shortened.

【0036】[0036]

【発明の効果】以上説明したように、本発明の半導体装
置の実装方法によれば、あらかじめ可塑状態に維持した
熱可塑性の導電性接着剤を用いて半導体装置と回路基板
を接合するために、半導体装置を回路基板に実装する際
に導電性接着剤を短時間で硬化することができ、よっ
て、導電性接着剤を用いた半導体装置の実装体の生産性
の向上を図ることができる。
As described above, according to the semiconductor device mounting method of the present invention, the semiconductor device and the circuit board are joined by using a thermoplastic conductive adhesive maintained in a plastic state in advance. When the semiconductor device is mounted on the circuit board, the conductive adhesive can be cured in a short time, so that the productivity of the semiconductor device package using the conductive adhesive can be improved.

【0037】さらに、本発明により得られる半導体装置
の実装体は、半導体装置と回路基板との接着に熱可塑性
の導電性接着剤が用いられるので、半導体装置と回路基
板の熱膨張係数の差により生ずる熱応力の影響がほとん
どなく、信頼性の高い半導体装置の実装体を得ることが
できる。
Further, in the semiconductor device package obtained by the present invention, since a thermoplastic conductive adhesive is used for bonding the semiconductor device and the circuit board, a difference in thermal expansion coefficient between the semiconductor device and the circuit board is obtained. A highly reliable semiconductor device package can be obtained with little influence of the generated thermal stress.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施例である半導体装置の実装工程における半
導体装置等の状態を示す部分断面図である。
FIG. 1 is a partial cross-sectional view showing a state of a semiconductor device and the like in a mounting process of a semiconductor device according to an embodiment.

【図2】実施例における半導体装置の実装体の部分断面
図である。
FIG. 2 is a partial cross-sectional view of a semiconductor device package according to an embodiment.

【図3】従来の半導体装置の実装方法における半導体装
置の突出接点に導電性接着剤を転写する際の状態を示す
部分断面図である。
FIG. 3 is a partial cross-sectional view showing a state when a conductive adhesive is transferred to a projecting contact of a semiconductor device in a conventional method for mounting a semiconductor device.

【図4】従来の半導体装置の実装方法で得られる実装体
の部分断面図である。
FIG. 4 is a partial cross-sectional view of a package obtained by a conventional method for mounting a semiconductor device.

【符号の説明】[Explanation of symbols]

1 塗膜 2 支持基体 3 半導体装置 4 突出接点 5 加熱・吸着ツール 6 回路基板 7 接続電極 8 転写部 9 半導体装置 10 端子電極 11 突出接点 12 塗膜 13 支持基体 14 回路基板 15 接続電極 16 転写部 Reference Signs List 1 coating film 2 support base 3 semiconductor device 4 projecting contact 5 heating / suction tool 6 circuit board 7 connection electrode 8 transfer section 9 semiconductor device 10 terminal electrode 11 projecting contact 12 coating 13 support base 14 circuit board 15 connection electrode 16 transfer section

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平2−199847(JP,A) 特開 平5−136146(JP,A) 特開 平6−77285(JP,A) 特開 平5−144878(JP,A) 特開 平2−34949(JP,A) 特開 平5−166879(JP,A) 特開 平7−321162(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01L 21/60 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-2-199847 (JP, A) JP-A-5-136146 (JP, A) JP-A-6-77285 (JP, A) JP-A-5-77285 144878 (JP, A) JP-A-2-34949 (JP, A) JP-A-5-166879 (JP, A) JP-A-7-321162 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/60

Claims (6)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 突出接点を有する半導体装置をフェース
ダウンで導電性接着剤を用いて回路基板に実装する半導
体装置の実装方法において、 熱可塑性の導電性接着剤の塗膜を支持基体上に形成する
工程と、 上記支持基体上の導電性接着剤を加熱して可塑状態に維
持しながら、上記半導体装置の突出接点を上記支持基体
上の導電性接着剤の塗膜に接触させて、突出接点に導電
性接着剤を転写する工程と、 上記工程で形成された導電性接着剤の転写部を可塑状態
に維持しながら半導体装置の突出接点と回路基板の接続
電極とを接触させる工程と、 上記半導体装置の突出接点を回路基板の接続電極とを接
触させた状態で導電性接着剤を冷却して両者を接着する
工程とを備えたことを特徴とする半導体装置の実装方
法。
1. A method for mounting a semiconductor device having a projecting contact on a circuit board face down using a conductive adhesive, wherein a coating film of a thermoplastic conductive adhesive is formed on a support base. Contacting the projecting contact of the semiconductor device with a coating of the conductive adhesive on the support base while heating the conductive adhesive on the support base to maintain the plastic state. Transferring the conductive adhesive to the semiconductor device, and contacting the projecting contact of the semiconductor device with the connection electrode of the circuit board while maintaining the transfer portion of the conductive adhesive formed in the above process in a plastic state; Cooling the conductive adhesive in a state where the protruding contact of the semiconductor device is in contact with the connection electrode of the circuit board, and bonding the two to each other.
【請求項2】 請求項1記載の半導体装置の実装方法に
おいて、 上記半導体装置の突出接点に導電性接着剤を転写する工
程では、半導体装置を導電性接着剤が可塑状態となる温
度以上の温度に加熱することを特徴とする半導体装置の
実装方法。
2. The method for mounting a semiconductor device according to claim 1, wherein in the step of transferring the conductive adhesive to the projecting contact of the semiconductor device, the temperature of the semiconductor device is higher than a temperature at which the conductive adhesive is in a plastic state. A method for mounting a semiconductor device, comprising:
【請求項3】 請求項1又は2記載の半導体装置の実装
方法において、 上記半導体装置の突出接点を回路基板の接続電極に接触
させる工程では、半導体装置を導電性接着剤が可塑状態
となる温度以上の温度に加熱することを特徴とする半導
体装置の実装方法。
3. The method for mounting a semiconductor device according to claim 1, wherein, in the step of bringing the projecting contact of the semiconductor device into contact with a connection electrode of a circuit board, the semiconductor device is brought into a temperature at which the conductive adhesive is in a plastic state. A method for mounting a semiconductor device, comprising heating to the above temperature.
【請求項4】 請求項1又は2記載の半導体装置の実装
方法において、 半導体装置の突出接点を回路基板の接続電極に接触させ
る工程では、回路基板を導電性接着剤が可塑状態となる
温度以上の温度に加熱することを特徴とする半導体装置
の実装方法。
4. The method for mounting a semiconductor device according to claim 1, wherein, in the step of bringing the projecting contact of the semiconductor device into contact with the connection electrode of the circuit board, the circuit board is heated to a temperature higher than a temperature at which the conductive adhesive is in a plastic state. A semiconductor device mounting method, wherein the semiconductor device is heated to a predetermined temperature.
【請求項5】 請求項1,2,3又は4記載の半導体装
置の実装方法において、 上記導電性接着剤は、少なくとも熱可塑性樹脂と導電性
フィラーとを含むことを特徴とする半導体装置の実装方
法。
5. The method for mounting a semiconductor device according to claim 1, wherein the conductive adhesive contains at least a thermoplastic resin and a conductive filler. Method.
【請求項6】 請求項1,2,3,4又は5記載の半導
体装置の実装方法において、 上記半導体装置の突出接点は、二段突出形状を有するこ
とを特徴とする半導体装置の実装方法。
6. The method of mounting a semiconductor device according to claim 1, wherein the projecting contact of the semiconductor device has a two-step projecting shape.
JP11254694A 1994-05-26 1994-05-26 Semiconductor device mounting method Expired - Fee Related JP3255796B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11254694A JP3255796B2 (en) 1994-05-26 1994-05-26 Semiconductor device mounting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11254694A JP3255796B2 (en) 1994-05-26 1994-05-26 Semiconductor device mounting method

Publications (2)

Publication Number Publication Date
JPH07321148A JPH07321148A (en) 1995-12-08
JP3255796B2 true JP3255796B2 (en) 2002-02-12

Family

ID=14589368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11254694A Expired - Fee Related JP3255796B2 (en) 1994-05-26 1994-05-26 Semiconductor device mounting method

Country Status (1)

Country Link
JP (1) JP3255796B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2951882B2 (en) 1996-03-06 1999-09-20 松下電器産業株式会社 Semiconductor device manufacturing method and semiconductor device manufactured using the same
EP1445995B1 (en) 1996-12-27 2007-02-14 Matsushita Electric Industrial Co., Ltd. Method of mounting an electronic component on a circuit board and system for carrying out the method

Also Published As

Publication number Publication date
JPH07321148A (en) 1995-12-08

Similar Documents

Publication Publication Date Title
US5749997A (en) Composite bump tape automated bonding method and bonded structure
JP2891184B2 (en) Semiconductor device and manufacturing method thereof
US5861661A (en) Composite bump tape automated bonded structure
JP3881751B2 (en) Semiconductor chip mounting structure and mounting method
JP3255796B2 (en) Semiconductor device mounting method
JP2003124262A5 (en)
JPS6351538B2 (en)
JP2001308146A (en) Apparatus for installing semiconductor chip on chip carrier
US6008072A (en) Tape automated bonding method
US6369450B1 (en) Method of producing mounting structure and mounting structure produced by the same
JP3472342B2 (en) Method of manufacturing semiconductor device package
JPH10125734A (en) Semiconductor unit and manufacturing method thereof
US6194780B1 (en) Tape automated bonding method and bonded structure
JP2754534B2 (en) Semiconductor device and manufacturing method thereof
JPH0521522A (en) Semiconductor chip mounting method
JPS62126645A (en) Lsi-chip mounting method
JP2748771B2 (en) Film carrier semiconductor device and method of manufacturing the same
JPH09266227A (en) Bonding method of electronic parts
JP3001483B2 (en) Lead frame, semiconductor device and method of manufacturing the same
JP2780523B2 (en) Semiconductor device mounting method
JP2523641B2 (en) Semiconductor device
JP2732991B2 (en) Semiconductor device
JP2943912B2 (en) Semiconductor device and manufacturing method thereof
JP2001308230A (en) Semiconductor device
JPH07263487A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20011113

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071130

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081130

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091130

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091130

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101130

Year of fee payment: 9

LAPS Cancellation because of no payment of annual fees