JP2014022705A - Semiconductor light-emitting device and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an LED device which can be easily formed even when an LED die is flip-chip mounted on an FPC board provided with a metal electrode layer only on an undersurface, and provide a manufacturing method of the LED device.SOLUTION: A semiconductor light-emitting device manufacturing method comprises: preparing a large-size FPC board 40 composed of a polyimide film 41 in which a plurality of openings are formed and a metal electrode layer 42; flip-chip mounting LED dies 34 on the large-size FPC board 40; coating top faces of the LED die 34 and the large-size FPC board 40 with a white reflective component 46 and a fluorescence component 47; and finally singulating the large-size FPC board 40 to obtain LED devices 20.

Description

  The present invention relates to a semiconductor light emitting device in which a semiconductor light emitting element is flip-chip mounted on a circuit board, and the semiconductor light emitting element is covered with a covering member.

  A semiconductor light-emitting device cut out from a wafer (hereinafter referred to as an LED die unless otherwise specified) is mounted on a circuit board and covered with a coating member such as resin or glass, and then packaged. Called the device). This LED device takes various forms depending on the use situation, but in this, the LED die is mounted on an FPC (Flexible Printed Circuit) board with emphasis on heat dissipation, thinness, ease of manufacture, and material cost reduction. There are things to do.

  For example, FIG. 4 of Patent Document 1 shows a state in which an LED die is mounted on an FPC board. Then, FIG. 4 of patent document 1 is reposted in FIG. 7, and the mounting condition of LED die is demonstrated. Note that FIG. 7 is a cross-sectional view illustrating a process of bonding the LED die (LED 102) to the FPC board (flexible substrate 100), and thus a covering member that covers the LED die (LED 102) is not illustrated.

  A stud bump 202 is attached to the pad 204 on the flexible substrate 100. Contacts 220 a and 220 b that are connection electrodes of the LED 102 are aligned with the stud bump 202. Contact 220a is connected to n-type layer 102a, and similarly, contact 220b is electrically connected to p-type layer 102b. An active region 102c is interposed between the n-type layer 102a and the p-type layer 102b. Here, the LED 102 is thermosonic coupled to the flexible substrate 100. That is, the LED 102 is pressed by the coupling tool 222 in the direction indicated by the arrow 224 while the flexible substrate 100 is heated. At this time, ultrasonic vibration is applied as indicated by an arrow 226.

  The flexible substrate 100 included in the LED device illustrated in FIG. 7 is considered to be a two-layer FPC substrate having a metal electrode layer on each of the upper surface side and the lower surface side because the pads 204 are illustrated on the upper surface side. . This two-layer FPC board requires an insulating layer between the upper and lower metal electrode layers, and further requires a through hole for connecting the upper and lower metal electrode layers to the insulating layer. That is, the two-layer FPC board has a problem of deterioration of heat dissipation due to the insulating layer and a long manufacturing process due to a complicated structure. Therefore, for example, as shown in FIG. 1 of Patent Document 2, it has been proposed to form one metal electrode layer on the FPC board.

  FIG. 1 of Patent Document 2 is shown again in FIG. 8 and the state thereof will be described. FIG. 8 is a cross-sectional view of a conventional LED device 10. In the LED device 10, an LED element 3 (LED die) is mounted on a flexible printed circuit board 4 (FPC board), and the LED element 3 is covered with a silicone resin 17. The flexible printed circuit board 4 includes a polyimide film 18 and metal patterns 11 and 12, and includes recesses 1 and 2. The recesses 1 and 2 are formed of through holes provided in the polyimide film 18 and metal patterns 11 and 12 that block the openings on the lower surface of the through holes. A sapphire substrate 16 included in the LED element 3 is die-bonded to the metal pattern 11, and two electrodes (anode and cathode) of the semiconductor layer 15 are connected to the metal patterns 11 and 12 by wires 13. Upper portions of the LED element 3 and the flexible printed circuit board 4 are covered with a silicone resin 17 containing a phosphor.

Japanese Patent Laying-Open No. 2005-322937 (FIG. 4) JP 2012-64841 A (FIG. 1)

  The LED device manufactured in the process shown in FIG. 7 employs flip chip mounting in which the semiconductor layers (n-type layer 102a and p-type layer 102b) are directly connected to the FPC board (flexible board 100). In addition, it enjoys good luminous efficiency and good heat dissipation by flip chip mounting. However, as described above, since this LED device uses a two-layer FPC board that impairs heat dissipation, the advantages of flip chip mounting cannot be fully exhibited. In addition, this two-layer FPC board lengthens the manufacturing process.

  On the other hand, the FPC board (flexible printed circuit board 4) included in the LED device 10 shown in FIG. 8 has a metal electrode layer (metal patterns 11 and 12) only on the lower surface, so that heat dissipation is good and the structure is further improved. Since it is simple, the manufacturing process is not prolonged. However, since the LED device 10 employs so-called face-up mounting using die bonding and wire bonding, reduction in light emission efficiency due to the shadow of the wire 14 and deterioration in heat dissipation due to the sapphire substrate 16 are problems. .

  For the above reasons, an LED device in which an LED die is flip-chip mounted on an FPC board having a metal electrode layer only on the lower surface is desired to improve heat dissipation and light emission efficiency. However, in order to put such an LED device into practical use, there arises a problem that the LED device must be easily manufactured.

  Therefore, in order to solve this problem, the present invention can easily manufacture an LED device that can be easily manufactured even if an LED die is flip-chip mounted on an FPC board having a metal electrode layer only on the lower surface. It aims to provide a method.

In order to solve the above problems, a method for manufacturing a semiconductor light-emitting device according to the present invention is a method for manufacturing a semiconductor light-emitting device in which a semiconductor light-emitting element is flip-chip mounted on an FPC board having a metal electrode layer only on a lower surface.
A polyimide film preparation step of preparing a large-sized polyimide film in which a plurality of openings are formed in advance;
The polyimide film is attached to a metal foil, and a large-format FPC substrate creating step of forming the metal electrode layer by patterning the metal foil to create a large-format FPC substrate;
A flip chip mounting step of flip mounting a plurality of semiconductor light emitting elements on the metal electrode layer exposed from the opening of the polyimide film;
A coating step of coating a side surface and an upper surface of the semiconductor light emitting element and an upper surface of the large format FPC substrate with a coating member;
And dividing the large FPC board into individual pieces to obtain individual semiconductor light emitting devices.

The large-format FPC substrate used in the method for manufacturing a semiconductor light emitting device of the present invention has an extremely simple structure consisting of only a polyimide film connecting the metal electrode layers as an upper layer and a patterned metal electrode layer as a lower layer. In this manufacturing method, when the semiconductor light emitting element is flip-mounted on the large format FPC board, the side and top surfaces of the semiconductor light emitting element and the upper surface of the large format FPC board are covered with a covering member, and finally the large format FPC board covered with the covering member is cut. As a result, a semiconductor light emitting device separated into pieces is obtained. That is, the covering member is a member that protects the semiconductor light emitting element and adjusts its light emission, and also functions as a member that supports the large format FPC board by curing.

  In the polyimide film preparation step, the opening may be formed by pressing.

  In the large-format FPC substrate creation step, a support film for supporting the metal foil or a support resin may be applied from the polyimide film side before patterning the metal foil.

  The metal foil may be patterned into a strip shape in the large FPC substrate creation process.

  In the covering step, the bottom surface of the semiconductor light emitting element may be covered with the covering member.

  In the covering step, the covering member has an upper layer and a lower layer, the lower layer covering member is a white reflecting member, the upper layer covering member is a fluorescent member, and the side surface of the semiconductor light emitting element is covered by the white reflecting member. The upper surface of the semiconductor light emitting element may be covered with the fluorescent member.

  In the covering step, the fluorescent member may be a fluorescent sheet, and the fluorescent sheet may be attached to the upper surface of the semiconductor light emitting element.

In order to solve the above problems, a semiconductor light-emitting device of the present invention is a semiconductor light-emitting device in which a semiconductor light-emitting element is flip-chip mounted on an FPC board having a metal electrode layer only on the lower surface.
A pair of metal electrode layers arranged in a plane and having a gap;
A polyimide film that connects the pair of metal electrode layers and adheres to the pair of metal electrode layers at a periphery of an upper surface of the pair of metal electrode layers;
A semiconductor light emitting device flip-mounted on the pair of metal electrode layers so as to straddle the gap;
The semiconductor light emitting device includes a covering member that covers a side surface and an upper surface of the semiconductor light emitting element and an upper surface of the pair of metal electrode layers.

  The FPC substrate included in the semiconductor light emitting device of the present invention has an extremely simple structure consisting of only a polyimide film that connects the metal electrode layers as an upper layer and a patterned metal electrode layer as a lower layer. Further, the covering member included in the semiconductor light emitting device of the present invention reinforces the FPC board while protecting the semiconductor light emitting element and adjusting the light emission characteristics in the semiconductor light emitting element flip-mounted on the FPC board and the coating on the upper surface of the FPC board. doing.

  The polyimide film may be provided only on two opposing sides of the pair of metal electrode layers.

  The covering member may include a white reflecting member and a fluorescent member, a side surface of the semiconductor light emitting element may be covered with the white reflecting member, and an upper surface of the semiconductor light emitting element may be covered with the fluorescent member.

  The fluorescent member may be a phosphor sheet.

  The metal electrode layer may be rectangular, and three sides of the metal electrode layer that do not follow the gap may coincide with an end of the FPC board.

  As described above, the method for manufacturing a semiconductor light emitting device according to the present invention uses a large-format FPC board having an extremely simple structure, and at the same time, a covering member that covers the large-format FPC board functions as a reinforcing member and a protective and optical member. Therefore, the number of constituent members is reduced, and a semiconductor light emitting device in which a semiconductor light emitting element is flip-chip mounted on an FPC substrate having a metal electrode layer only on the lower surface can be easily manufactured.

  As described above, the semiconductor light emitting device of the present invention has an extremely simple FPC board and a coating that performs a plurality of functions even when the semiconductor light emitting element is flip-chip mounted on the FPC board having the metal electrode layer only on the lower surface. Since it is a structure including members, the number of members to be formed is reduced and it is easy to manufacture.

The external view of the LED apparatus in embodiment of this invention. The perspective view which shows the internal structure of the LED apparatus of FIG. The top view and sectional drawing which show the internal structure of the LED device of FIG. The top view of the large format FPC board used for manufacture of the LED device of FIG. Explanatory drawing of the manufacturing method with respect to the LED device of FIG. Explanatory drawing of the manufacturing method with respect to the LED device of FIG. Sectional drawing of the conventional LED device. Sectional drawing of the conventional LED device.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. In the description of the drawings, the same or equivalent elements will be denoted by the same reference numerals, and redundant description will be omitted. For the sake of explanation, the scale of the members is changed as appropriate. Furthermore, the relationship with the invention specific matter described in the claims is described in parentheses.

  The outer shape of the LED device 20 (semiconductor light emitting device) in the embodiment of the present invention will be described with reference to FIG. 1A and 1B are external views of the LED device 20, wherein FIG. 1A is a plan view, FIG. 1B is a front view, FIG. 1C is a bottom view, and FIG. As shown in (a), when the LED device 20 is viewed from above, only the rectangular fluorescent member 21 (covering member) is visible. When the LED device 20 is viewed from the front as shown in (b), the white reflecting member 22, the polyimide film 23, and the connection electrodes (metal electrode layers) 24 and 25 can be seen under the fluorescent member 21. The white reflective member 22 is also present in the gap 27. When the LED device 20 is viewed from the bottom as shown in (c), the rectangular connecting electrodes 24 and 25 and the white reflecting member 22 filled in the gap 27 can be seen. When the LED device 20 is viewed from the right side as shown in (d), the white reflecting member 22, the polyimide films 23 and 26, and the connection electrode 25 are seen under the fluorescent member 21, and the polyimide films 23 and 26 are connected to the connection electrode 25. It can be seen that it is at both ends of the upper surface.

  Next, the internal structure of the LED device 20 shown in FIG. 1 will be described with reference to FIG. FIG. 2 is a perspective view showing a state in which the fluorescent member 21 and the white reflecting member 22 are removed from the LED device 20. The FPC board 28 includes connection electrodes 24 and 25 and polyimide films 23 and 26. That is, the FPC board 28 has polyimide films 23 and 26 in the upper layer, and the polyimide films 23 and 26 connect the connection electrodes 24 and 25 in the lower layer. As described above, the FPC board 28 has a very simple structure. The polyimide films 23 and 26 are bonded to the connection electrodes 24 and 25 along two opposing sides of the pair of connection electrodes 24 and 25. The LED die 34 is flip-mounted on the connection electrodes 24 and 25 across the gap between the connection electrodes 24 and 25. Note that only the sapphire substrate 31 occupying the LED die 34 is visible (see FIG. 3B described later).

Next, the internal structure of the LED device 20 will be described in more detail with reference to FIG. 3A and 3B are a plan view and a cross-sectional view showing the internal structure of the LED device 20, and FIG. 3A is a plan view showing a state where the fluorescent member 21 and the white reflecting member 22 are removed from the LED device 20 shown in FIG. 2B is a cross-sectional view drawn along the line AA in FIG. 1A, and FIG. 2C is a cross-sectional view drawn along the line BB in FIG. As shown in (a), there is a gap 27 between the connection electrodes 24 and 25, and the LED die 34 is flip-mounted so as to straddle the gap 27 between the connection electrodes 24 and 25.

  In the cross-sectional view of FIG. 3B, the LED die 34 in which the semiconductor layer 32 and the sapphire substrate 31 are stacked on the protruding electrode 33 is shown. The protruding electrodes 33 are an anode and a cathode, and are connected to the connection electrodes 24 and 25 by Au—Sn eutectic or high melting point solder. In addition, the LED die 34 is coated with the white reflecting member 22 on the side surface and the bottom surface, and with the fluorescent member 21 on the top surface. The fluorescent member 21 also covers the upper surface of the white reflecting member 22.

  3C shows a state in which polyimide films 23 and 26 are stacked on the left and right ends on the connection electrode 25, and an LED die 34 is stacked on the center. Further, the LED die 34 is covered with the white reflecting member 22 on the side surface, and the upper surfaces of the LED die 34 and the white reflecting member 22 are covered with the fluorescent member 21.

  The polyimide films 23 and 26 have a thickness of 12 to 50 μm. The connection electrodes 24 and 25 are obtained by plating Ni—Au or Sn on a copper foil. The thickness of the copper foil is 18 to 70 μm and the thickness of the plating is 1 to 6 μm. The fluorescent member 21 is obtained by attaching a sheet obtained by kneading phosphor fine particles to a silicone resin, and has a thickness of about 100 μm. The white reflective member 22 is obtained by kneading and curing reflective fine particles such as alumina and titanium oxide in a silicone resin.

  The white reflecting member 22 returns the light to be emitted from the side surface of the LED die 34 into the LED die 34 and is finally directed toward the upper side of the LED die 34. The fluorescent member 21 converts the wavelength of part of the light emitted from the LED die 34. Further, the FPC board 28 is reinforced by the white reflecting member 22 and the fluorescent member 21, and the strength of the entire LED device 20 is maintained.

  The LED die 34 includes a sapphire substrate 31, a semiconductor layer 32, and a protruding electrode 33. The thickness of the sapphire substrate 31 is 80 to 150 μm, the thickness of the semiconductor layer 32 is less than 10 μm, and the thickness of the protruding electrode 33 is about 10 to 30 μm. The semiconductor layer 32 includes an n-type semiconductor layer including a GaN buffer layer and an n-type GaN layer, and a p-type semiconductor layer including a p-type GaN layer and a metal multilayer film such as a reflective layer or an atomic diffusion prevention layer. The light emitting layer is at the boundary between the p-type semiconductor layer and the n-type semiconductor layer. The protruding electrode 33 is a bump having Au or Cu as a core, and is formed by an electrolytic plating method.

  Next, the large format FPC board 40 will be described with reference to FIG. FIG. 4 is a plan view of the large format FPC board 40. The large-format FPC board 40 has a lattice formed of a strip-like polyimide film 41 and a metal electrode layer 42, and a large number of FPC boards 28 can be obtained when separated into individual pieces. Therefore, for reference, a region where one FPC board 28 is obtained is indicated by a broken line in the drawing. Although not shown, the left and right ends of the strip-shaped polyimide film 41 are connected. There is a gap 43 between the adjacent metal electrode layers 42, and the gap 43 becomes a gap 27 (see FIG. 3A) when separated. Similarly, when the metal electrode layer 42 is separated, the connection electrodes 24 and 25 (see FIG. 3A) are obtained.

Next, a method for manufacturing the LED device 20 will be described with reference to FIGS. FIGS. 5 and 6 are explanatory views of a manufacturing method for the LED device of FIG. These steps are shown. In an actual manufacturing process, a large number of LED devices 20 are manufactured in parallel using a large format FPC board 40 having a large number of LED die mounting regions. However, in description of FIG. 5, FIG. 6, sectional drawing of the characteristic state about the LED apparatus 20 for about one piece was shown with respect to each process. In the drawing, the left side is a cross-sectional view seen from the front, and the right side is a cross-sectional view seen from the right side direction, and corresponds to FIGS. 3B and 3C, respectively.

  FIG. 5A shows a polyimide film preparation process for preparing a large-sized polyimide film 41 in which a plurality of openings are formed in advance. The opening of the polyimide film 41 is formed by pressing a flat polyimide sheet. At the same time, a flat metal foil 42a is prepared.

  FIGS. 5B to 5E show a large-format FPC creation process in which a large-format FPC substrate 40 is formed by attaching a large-size polyimide film 41 to a metal foil 42a and forming a metal electrode layer 42 by patterning the metal foil 42a. ing. First, as shown in (b), a large polyimide film 41 is attached to the metal foil 42a with an adhesive. Next, as shown in (c), the supporting resin 51 is applied to the upper surface side, and the supporting resin 51 is cured. Next, as shown in (d), the metal foil 42a is etched to form (pattern) a band-shaped metal electrode layer 42. Finally, as shown in (e), the supporting resin 51 is removed and the metal electrode layer 42 is plated. The application of the supporting resin 51 can be replaced with the application of a supporting film. This supporting film is attached to the metal foil 42a from the polyimide film 41 side, and is peeled off after patterning the metal foil 42a.

  FIG. 6A shows a flip chip mounting process in which a plurality of LED dies 34 are flip mounted on the metal electrode layer 42 included in the large format FPC board 40. The LED die 34 is flip-chip mounted on the metal electrode layer 42 exposed from the opening of the polyimide film 41. A support film (not shown) is attached to the lower surface of the metal electrode layer 42 (the same applies hereinafter). The LED dies 34 may be arranged one by one on the large format FPC board 40, but a plurality of LED dies 34 are arranged on the adhesive sheet in advance with the electrode surface facing up, and the adhesive sheet is turned upside down once. In particular, it is preferable to bond a large number of LED dies 34 to the large format FPC board 40. This bonding is performed using Au-Sn eutectic or high melting point solder.

  6 (b) to 6 (c) show the covering step, in which (b) is a step of covering the side and bottom surfaces of the LED die 34 and the large FPC board 40 with the white reflecting member 46, and (c) is the LED. This is a step of covering the upper surface of the die 34 and the upper surface of the white reflecting member 46 with the fluorescent member 47. In the step (b), the white reflecting member 46 before curing is applied onto the large FPC board 40 with a dispenser so as not to cover the upper surface of the LED die 34. In the step (c), when the large-format FPC board 40 is heated to cure the white reflecting member 46, a sheet-like fluorescent member 47 is attached. In addition, when apply | coating the white reflective member 46 with a squeegee at the process of (b), the upper surface of the white reflective member 46 is grind | polished after application | coating and the upper surface of the LED die 34 is exposed. Alternatively, the fluorescent member 47 may be formed by applying a fluorescent resin obtained by kneading a phosphor to a silicone resin before being cured, and then curing by heating.

  FIG. 6D shows an individualization step for obtaining individual LED devices 20 by dividing the large FPC board 40 that has been coated. Cutting is performed by dicing. At this time, the support film shown in (a) is not cut, and the LED device 20 is picked up from the support film after separation.

  In addition, in the LED device 20 of this embodiment, the member which connects the connection electrodes 24 and 25 in the FPC board | substrate 28 was the polyimide films 23 and 26 (refer FIG. 2). However, the member for connecting the connection electrodes 24 and 25 is not limited to the polyimide film. For example, a thin glass substrate having an opening formed in advance may be attached to the metal foil, and then the metal foil may be patterned to form the connection electrode. However, the polyimide film has a good workability and has a feature that burrs are not easily generated when an opening is formed by pressing.

  In the LED device 20 of the present embodiment, two polyimide films 23 and 26 are arranged along the long side of the FPC board 28 (see FIG. 3), but the polyimide film makes a round around the FPC board 28. May be. Further, in the LED device 20 of the present embodiment, the three sides of the connection electrodes 24 and 25 coincide with the outer shape of the FPC board 28 (see FIG. 3), but the three sides of the connection electrodes are placed inside the FPC board. Also good. In this case, the outer shape of the FPC board matches the outer shape of the polyimide film. However, the polyimide films 23 and 26 are arranged as in the embodiment 20, and the metal electrode layer takes the shape of the connection electrodes 24 and 25, thereby simplifying the structure of the large FPC board 40 (see FIG. 4) and facilitating manufacture. .

  In the LED device 20 of this embodiment, the covering member is composed of the white reflecting member 22 and the fluorescent member 21 (see FIG. 3), but the entire covering member may be a fluorescent member. In this case, light is emitted also to the side of the LED device.

20 ... LED device (semiconductor light emitting device),
21, 47... Fluorescent member (coating member),
22, 46 ... White reflective member (coating member),
23, 26, 41 ... polyimide film,
24, 25 ... connection electrode 27, 43 ... gap,
28 ... FPC board,
31 ... Sapphire substrate,
32 ... Semiconductor layer,
33 ... protruding electrode,
34 ... LED die (semiconductor light emitting element),
40 ... Large FPC board,
42 ... Metal electrode layer,
42a ... metal foil,
51: Supporting resin.

Claims (12)

In a method of manufacturing a semiconductor light emitting device in which a semiconductor light emitting element is flip-chip mounted on an FPC board having a metal electrode layer only on the lower surface,
A polyimide film preparation step of preparing a large-sized polyimide film in which a plurality of openings are formed in advance;
The polyimide film is attached to a metal foil, and a large-format FPC substrate creating step of forming the metal electrode layer by patterning the metal foil to create a large-format FPC substrate;
A flip chip mounting step of flip mounting a plurality of semiconductor light emitting elements on the metal electrode layer exposed from the opening of the polyimide film;
A coating step of coating a side surface and an upper surface of the semiconductor light emitting element and an upper surface of the large format FPC substrate with a coating member;
A method of manufacturing a semiconductor light emitting device, comprising: a step of dividing the large FPC substrate into individual pieces to obtain individual semiconductor light emitting devices.   The method for manufacturing a semiconductor light emitting device according to claim 1, wherein the opening is formed by pressing in the polyimide film preparation step.   3. The semiconductor according to claim 1, wherein in the large-format FPC board creation step, a support film for supporting the metal foil is applied from a polyimide film side or a support resin is applied before patterning the metal foil. Manufacturing method of light-emitting device.   4. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein the metal foil is patterned into a strip shape in the large-format FPC substrate creation step. 5.   5. The method of manufacturing a semiconductor light emitting device according to claim 1, wherein a bottom surface of the semiconductor light emitting element is covered with the covering member in the covering step.   In the covering step, the covering member has an upper layer and a lower layer, the lower layer covering member is a white reflecting member, the upper layer covering member is a fluorescent member, and the side surface of the semiconductor light emitting element is covered by the white reflecting member. 6. The method of manufacturing a semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting element is covered and the upper surface of the semiconductor light emitting element is covered with the fluorescent member.   The semiconductor light emitting device according to claim 1, wherein the fluorescent member is a phosphor sheet in the covering step, and the phosphor sheet is attached to an upper surface of the semiconductor light emitting element. Production method. In a semiconductor light emitting device in which a semiconductor light emitting element is flip-chip mounted on an FPC board having a metal electrode layer only on the lower surface,
A pair of metal electrode layers arranged in a plane and having a gap;
A polyimide film that connects the pair of metal electrode layers and adheres to the pair of metal electrode layers at a periphery of an upper surface of the pair of metal electrode layers;
A semiconductor light emitting device flip-mounted on the pair of metal electrode layers so as to straddle the gap;
A semiconductor light-emitting device comprising: a side surface and an upper surface of the semiconductor light-emitting element; and a covering member that covers the upper surfaces of the pair of metal electrode layers.   The semiconductor light emitting device according to claim 8, wherein the polyimide film is only on two opposing sides of the pair of metal electrode layers.   The said covering member contains a white reflective member and a fluorescent member, the side surface of the said semiconductor light emitting element is coat | covered with the said white reflective member, and the upper surface of the said semiconductor light emitting element is coat | covered with the said fluorescent member. 9. The semiconductor light emitting device according to 9.   The semiconductor light emitting device according to claim 8, wherein the fluorescent member is a phosphor sheet.   12. The metal electrode layer according to claim 8, wherein the metal electrode layer has a rectangular shape, and three sides of the metal electrode layer not along the gap coincide with an end portion of the FPC board. The semiconductor light-emitting device as described.

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