JP2011009572A - Flip-chip packaging type led and method for manufacturing flip-chip packaging type led - Google Patents

Flip-chip packaging type led and method for manufacturing flip-chip packaging type led Download PDF

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JP2011009572A
JP2011009572A JP2009152823A JP2009152823A JP2011009572A JP 2011009572 A JP2011009572 A JP 2011009572A JP 2009152823 A JP2009152823 A JP 2009152823A JP 2009152823 A JP2009152823 A JP 2009152823A JP 2011009572 A JP2011009572 A JP 2011009572A
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nitride semiconductor
semiconductor layer
type nitride
side electrode
led
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JP2011009572A5 (en
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Kazuhiko Terajima
寺嶋　　一彦
Hisato Hiraishi
久人 平石
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Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
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Citizen Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

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Abstract

PROBLEM TO BE SOLVED: To solve such a problem that although a conventional FC packaging type LED is high in emission efficiency, it is difficult to actualize the FC packaging type LED of which the reliability of electrical connection is high when positioning and packaging in flip-chip packaging.SOLUTION: An FC packaging type LED 10 having an n-type nitride semiconductor layer 2 and a p-type nitride semiconductor layer 3 formed on a transparent substrate 1, and an n-side electrode 4 and a p-side electrode 5 formed on the n-type nitride semiconductor layer 2 and the p-type nitride semiconductor layer 3, has on the n-type nitride semiconductor layer 2 and the p-type nitride semiconductor layer 3 an insulating layer 6 which is formed so as to have a penetrating hole in the portion of the n-side electrode 4 and the p-side electrode 5, and two roughly rectangle shape electrodes 7, 8 for external connection formed in parallel on the upper plane of the insulating layer 6, wherein these two electrodes 7, 8 for external connection are configured so as to be connected to the n-side electrode 4 and the p-side electrode 5 through the penetrating hole.

Description

本発明はフリップチップ実装型ＬＥＤの構成及び製造方法に関するものであり、詳しくはフリップチップ実装に適した外部接続用電極を有し、かつ発光効率の高いフリップチップ実装型ＬＥＤの構成及び製造方法に関する。   The present invention relates to a configuration and a manufacturing method of a flip chip mounting type LED, and more particularly to a configuration and a manufacturing method of a flip chip mounting type LED having an external connection electrode suitable for flip chip mounting and having high luminous efficiency. .

近年、ＬＥＤ素子（以下ＬＥＤと略記する）は半導体素子であるため、長寿命で優れた駆動特性を有し、さらに小型で発光効率が良く鮮やかな発光色を有することから、カラー表示装置のバックライトや照明等に広く利用されるようになってきた。   In recent years, since an LED element (hereinafter abbreviated as LED) is a semiconductor element, it has a long life, excellent driving characteristics, a small size, high luminous efficiency, and a bright emission color. Widely used for lights and lighting.

特に近年、青色ＬＥＤとＹＡＧ蛍光体との組み合わせによる白色発光素子が開発されるに至り、そのＬＥＤ構成としてフリップチップ実装型ＬＥＤが適することから、このフリップチップ実装に適したＬＥＤの構成が提案されている（例えば特許文献１、特許文献２）。   In particular, in recent years, white light emitting elements using a combination of a blue LED and a YAG phosphor have been developed, and since a flip chip mounting type LED is suitable as the LED configuration, an LED configuration suitable for this flip chip mounting has been proposed. (For example, Patent Document 1 and Patent Document 2).

［特許文献１のＦＣ実装型ＬＥＤの構成の説明（図７−図９）］
以下に、従来のフリップチップ実装型ＬＥＤ（以下、「ＦＣ実装型ＬＥＤ」と略記する）について説明する。図７は、特許文献１におけるＦＣ実装型ＬＥＤの断面図である。図８は、ＦＣ実装型ＬＥＤの下面図であり、図９が、そのＬＥＤから絶縁層を除去して電極構成を露出させた下面図である。 [Description of Configuration of FC-Mounted LED in Patent Document 1 (FIGS. 7 to 9)]
A conventional flip chip mounting type LED (hereinafter abbreviated as “FC mounting type LED”) will be described below. FIG. 7 is a cross-sectional view of the FC-mounted LED in Patent Document 1. FIG. 8 is a bottom view of the FC-mounted LED, and FIG. 9 is a bottom view in which the electrode configuration is exposed by removing the insulating layer from the LED.

図７に示す様に、ＦＣ実装型ＬＥＤ１００は、透明基板１０１上に形成されたｎ型窒化物半導体層１０２及びｐ型窒化物半導体層１０３と、ｎ型窒化物半導体層１０２及びｐ型窒化物半導体層１０３上にｎ側電極１０４及びｐ側電極１０５が形成された構成となっている。また、樹脂材料より構成される絶縁層１０６には、スルーホール１０６ａ，１０６ｂが設けられており、絶縁層１０６の下側に設けられて外部接続電極１０７，１０８は、スルーホール１０６ａ，１０６ｂの内部に設けられた接続電極１１１，１１２を介して、ｎ側電極１０４及びｐ側電極１０５に接続され、外部からＬＥＤに電流供給出来る様になっている。   As shown in FIG. 7, the FC-mounted LED 100 includes an n-type nitride semiconductor layer 102 and a p-type nitride semiconductor layer 103 formed on a transparent substrate 101, and an n-type nitride semiconductor layer 102 and a p-type nitride. An n-side electrode 104 and a p-side electrode 105 are formed on the semiconductor layer 103. The insulating layer 106 made of a resin material is provided with through holes 106a and 106b. The external connection electrodes 107 and 108 are provided on the lower side of the insulating layer 106 so that the inside of the through holes 106a and 106b. Are connected to the n-side electrode 104 and the p-side electrode 105 via the connection electrodes 111 and 112 provided on the LED, and current can be supplied to the LED from the outside.

なお、図８に示す如くこの外部接続電極１０７，１０８は、絶縁層１０６の下面に、フリップチップボンディングに必要な面積を確保するために、略正方形または円形に構成されている。   As shown in FIG. 8, the external connection electrodes 107 and 108 are formed in a substantially square or circular shape on the lower surface of the insulating layer 106 in order to secure an area necessary for flip chip bonding.

また、図９に示す様に、透明基板１０１の略全面に形成されたｎ型窒化物半導体層１０２のコーナー部分には、小さな露出部分１０２ａを残して、ｐ型窒化物半導体層１０３が形成されており、このｎ型窒化物半導体層１０２とｐ型窒化物半導体層１０３とが積層された部分（ｐ型窒化物半導体層１０３の同じ面積）が、ＬＥＤとしての発光面Ｈとなる。   Further, as shown in FIG. 9, the p-type nitride semiconductor layer 103 is formed at the corner portion of the n-type nitride semiconductor layer 102 formed on the substantially entire surface of the transparent substrate 101, leaving a small exposed portion 102a. A portion where the n-type nitride semiconductor layer 102 and the p-type nitride semiconductor layer 103 are stacked (the same area of the p-type nitride semiconductor layer 103) is a light emitting surface H as an LED.

そして、一般に製造販売されているＦＣ実装型ＬＥＤの構成は、発光面の面積を出来るだけ大きくして発光効率を上げる必要があるために、ｎ型窒化物半導体層１０２のコーナー部分に設けられた、ｎ型窒化物半導体層１０２と、ｐ型窒化物半導体層１０３とが積層されない部分、すなわち、非積層部分１０２ａの面積を出来るだけ小さくする高光利用効率の構成が採用されている。このため、この従来のＦＣ実装型ＬＥＤ構成では、ｎ側電極１０４の面積が大きくできず、外部接続電極１０７，１０８もあまり大きくできなかった。   In general, the configuration of the FC mounting type LED manufactured and sold is provided at the corner portion of the n-type nitride semiconductor layer 102 because it is necessary to increase the area of the light emitting surface as much as possible to increase the luminous efficiency. A configuration with high light utilization efficiency is adopted in which the area where the n-type nitride semiconductor layer 102 and the p-type nitride semiconductor layer 103 are not stacked, that is, the non-stacked portion 102a is made as small as possible. For this reason, in this conventional FC-mounted LED configuration, the area of the n-side electrode 104 cannot be increased, and the external connection electrodes 107 and 108 cannot be increased too much.

［特許文献２のＦＣ実装型ＬＥＤの構成の説明（図１０−図１２）］
次に、特許文献２に記載されているＦＣ実装型ＬＥＤについて説明する。
図１０は、特許文献２におけるＦＣ実装型ＬＥＤの断面図を示し、図１１は、その下面図を、図１２が、図１１における絶縁層を除去した下面図を示している。 [Description of Configuration of FC-Mounted LED in Patent Document 2 (FIGS. 10 to 12)]
Next, the FC mounted LED described in Patent Document 2 will be described.
10 shows a cross-sectional view of the FC-mounted LED in Patent Document 2, FIG. 11 shows a bottom view thereof, and FIG. 12 shows a bottom view in which the insulating layer in FIG. 11 is removed.

図１０において、この従来のＦＣ実装型ＬＥＤ２００は、透明基板２０１上に形成されたｎ型窒化物半導体層２０２及びｐ型窒化物半導体層２０３と、ｎ型窒化物半導体層２０２及びｐ型窒化物半導体層２０３上に、ｎ側電極２０４及びｐ側電極２０５が形成された構成となっている。そして、このｎ側電極２０４及びｐ側電極２０５が、それぞれ長方形になるように形成されている。   In FIG. 10, this conventional FC-mounted LED 200 includes an n-type nitride semiconductor layer 202 and a p-type nitride semiconductor layer 203 formed on a transparent substrate 201, and an n-type nitride semiconductor layer 202 and a p-type nitride. An n-side electrode 204 and a p-side electrode 205 are formed on the semiconductor layer 203. The n-side electrode 204 and the p-side electrode 205 are each formed to be rectangular.

また、ＳｉＯ２等からなる絶縁性の保護膜２０６は、ｎ型窒化物半導体層２０２及びｐ型窒化物半導体層２０３を保護すると共に、ｎ側電極２０４及びｐ側電極２０５上に、長方形の開口部２０６ａ、２０６ｂが形成されている。そして、図１１に示す如く、外部接続電極２０７，２０８は、絶縁層２０６の下面に開口部２０６ａ、２０６ｂに規制されて長方形に形成されている。   The insulating protective film 206 made of SiO 2 or the like protects the n-type nitride semiconductor layer 202 and the p-type nitride semiconductor layer 203 and has a rectangular opening on the n-side electrode 204 and the p-side electrode 205. 206a and 206b are formed. As shown in FIG. 11, the external connection electrodes 207 and 208 are formed in a rectangular shape on the lower surface of the insulating layer 206 by being restricted by the openings 206 a and 206 b.

また、図１２に示す様に、透明基板２０１の略全面に形成されたｎ型窒化物半導体層２０２には、片側の辺に沿って長方形の露出部分２０２ａを残して、ｐ型窒化物半導体層２０３が形成されており、このｎ型窒化物半導体層２０２とｐ型窒化物半導体層２０３とが積層された部分（ｐ型窒化物半導体層２０３と同じ面積）が、ＬＥＤとしての発光面Ｈとなる。   Also, as shown in FIG. 12, the n-type nitride semiconductor layer 202 formed on the substantially entire surface of the transparent substrate 201 leaves a rectangular exposed portion 202a along one side, leaving a p-type nitride semiconductor layer. 203 is formed, and a portion where the n-type nitride semiconductor layer 202 and the p-type nitride semiconductor layer 203 are stacked (the same area as the p-type nitride semiconductor layer 203) is a light emitting surface H as an LED. Become.

特開２００６−１１４８２０号公報（図１，図２）JP 2006-114820 A (FIGS. 1 and 2) 特開２００１−１２７３４８号公報（図１，図２）JP 2001-127348 A (FIGS. 1 and 2)

図７〜図９に示した特許文献１に記載のＦＣ実装型ＬＥＤは、ＬＥＤの発光面の構成として、非積層部分の面積を出来るだけ小さくした高効率構成を採用しており、ｎ型窒化物半導体層１０２、ｐ型窒化物半導体層１０３、ｎ側電極１０４、ｐ側電極１０５が形成されている発光素子形成面を、樹脂材料よりなる絶縁層１０６で被覆し、この絶縁層１０６の下面側にスルーホール１０６ａ，１０６ｂを介して外部接続電極１０７，１０８を設けているため、発光効率の良いＦＣ実装型ＬＥＤを得ることができるという長所を有する。ところが、この従来の構成では、外部接続電極１０７，１０８の形状として四角形の小型電極としているため、フリップチップ実装における位置決めが困難で、実装のときの電気的接続の信頼性に問題がある。   The FC-mounted LED described in Patent Document 1 shown in FIGS. 7 to 9 adopts a high-efficiency configuration in which the area of the non-stacked portion is made as small as possible as the configuration of the light emitting surface of the LED, and n-type nitriding The light-emitting element formation surface on which the oxide semiconductor layer 102, the p-type nitride semiconductor layer 103, the n-side electrode 104, and the p-side electrode 105 are formed is covered with an insulating layer 106 made of a resin material. Since the external connection electrodes 107 and 108 are provided on the side through the through holes 106a and 106b, there is an advantage that an FC-mounted LED with good luminous efficiency can be obtained. However, in this conventional configuration, since the external connection electrodes 107 and 108 are small rectangular electrodes, positioning in flip chip mounting is difficult, and there is a problem in the reliability of electrical connection during mounting.

つまり、この従来のＦＣ実装型ＬＥＤを実装するときに、素子形状が大きく、外部接続電極の形状も大きい場合にはあまり問題にならないが、現在の市場動向に従って素子の外形形状が小型化されると、それに伴って外部接続電極の形状が小さくなり、フリップチップ実装における位置決め、及び実装のときの電気的接続の信頼性が、大きな問題となる。   In other words, when mounting this conventional FC-mounting LED, if the element shape is large and the external connection electrode is also large, it will not be a problem, but the outer shape of the element is reduced in accordance with the current market trend. Along with this, the shape of the external connection electrode is reduced, and positioning in flip chip mounting and reliability of electrical connection at the time of mounting become serious problems.

また、図１０〜図１２に示した特許文献２に記載のＦＣ実装型ＬＥＤは、外部接続電極２０７，２０８の形状を、絶縁層２０６の下面の開口部２０６ａ、２０６ｂに合わせて長方形に形成しており、この２本の長方形状を有する外部接続電極２０７，２０８を平行に並べる構成によって、フリップチップ実装における位置決めが容易で、実装のときの電気的接続の信頼性を高めるという長所を有する。ところが、この従来の構成は、長方形の外部接続電極２０７を、ｎ型窒化物半導体層２０２の露出部分２０２ａに直接形成しているため、ｎ型窒化物半導体層２０２とｐ型窒化物半導体層２０３との積層部分、すなわちＬＥＤとしての発光面Ｈの面積が小さくなり、ＬＥＤ外形サイズに比してＬＥＤとしての発光効率が低くなるという問題がある。   Also, in the FC-mounted LED described in Patent Document 2 shown in FIGS. 10 to 12, the external connection electrodes 207 and 208 are formed in a rectangular shape in accordance with the openings 206a and 206b on the lower surface of the insulating layer 206. In addition, the configuration in which the two external connection electrodes 207 and 208 having a rectangular shape are arranged in parallel facilitates positioning in flip-chip mounting, and has an advantage of improving the reliability of electrical connection during mounting. However, in this conventional configuration, since the rectangular external connection electrode 207 is formed directly on the exposed portion 202a of the n-type nitride semiconductor layer 202, the n-type nitride semiconductor layer 202 and the p-type nitride semiconductor layer 203 are formed. Therefore, there is a problem that the area of the light emitting surface H as the LED is reduced, and the light emission efficiency as the LED is lower than the LED outer size.

そこで、本発明の目的は上記問題点を解決しようとするものであり、ＦＣ実装型ＬＥＤにおいて、発光効率が高く、フリップチップ実装における位置決め、及び実装のときの電気的接続の信頼性が高い、ＦＣ実装型ＬＥＤ及びその製造方法を提供することにある。   Therefore, the object of the present invention is to solve the above-mentioned problems, and in the FC mounting type LED, the luminous efficiency is high, the positioning in flip chip mounting, and the reliability of electrical connection at the time of mounting is high. An object of the present invention is to provide an FC-mounted LED and a manufacturing method thereof.

上記目的を達成するため、本発明においては、透明基板の上面に形成された、ｎ型窒化物半導体層及びｐ型窒化物半導体層と、ｎ型窒化物半導体層及びｐ型窒化物半導体層上に形成された、ｎ側電極及びｐ側電極とを有するＦＣ実装型ＬＥＤにおいて、ｎ型窒化物半導体層及びｐ型窒化物半導体層上に、ｎ側電極及びｐ側電極の部分に貫通孔を有して形成された絶縁層と、絶縁層の上面に平行に形成された２個の略長方形の外部接続用電極とを有し、この２個の外部接続用電極は、貫通孔を通してｎ側電極及びｐ側電極にそれぞれ接続されていることを特徴とする。   In order to achieve the above object, in the present invention, an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, and an n-type nitride semiconductor layer and a p-type nitride semiconductor layer formed on the upper surface of the transparent substrate. In the FC-mounting LED having an n-side electrode and a p-side electrode, a through-hole is formed in the n-side electrode and the p-side electrode on the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. And two substantially rectangular external connection electrodes formed in parallel to the upper surface of the insulation layer, and these two external connection electrodes are connected to the n side through the through holes. It is connected to the electrode and the p-side electrode, respectively.

上記構成によれば、絶縁層の上面に２個の平行配置された略長方形の外部接続用電極を形成し、この２個の外部接続用電極を絶縁層に形成された貫通孔を通してｎ側電極及びｐ側電極に接続しているので、発光効率が高く、フリップチップ実装における位置決め及び実装のときの電気的接続の信頼性が高いＦＣ実装型ＬＥＤを提供することができる。   According to the above configuration, two substantially rectangular external connection electrodes arranged in parallel are formed on the upper surface of the insulating layer, and the two external connection electrodes are connected to the n-side electrode through the through-hole formed in the insulating layer. In addition, since it is connected to the p-side electrode, it is possible to provide an FC-mounted LED with high light emission efficiency and high electrical connection reliability during positioning and mounting in flip-chip mounting.

また、ｎ側電極が、ｎ型窒化物半導体層のコーナー部分に形成された、ｎ型窒化物半導体層とｐ型窒化物半導体層との非積層部分に設けられていると良く、さらに絶縁層が、樹脂絶縁層であると良い。   The n-side electrode may be provided in a non-stacked portion of the n-type nitride semiconductor layer and the p-type nitride semiconductor layer formed at the corner portion of the n-type nitride semiconductor layer. However, a resin insulating layer is preferable.

また、ＦＣ実装型ＬＥＤの透明基板の下面と、ｎ型窒化物半導体層及びｐ型窒化物半導体層の形成された側面を、蛍光体を分散させた樹脂で被覆すると良い。それに代えて、透明基板および絶縁層の側面を反射性樹脂で囲み、当該反射性樹脂から露出する前記透明基板の表面に、蛍光体層が設けられた構成としても良い。   Further, the lower surface of the transparent substrate of the FC-mounted LED and the side surface on which the n-type nitride semiconductor layer and the p-type nitride semiconductor layer are formed may be covered with a resin in which a phosphor is dispersed. Alternatively, the side surfaces of the transparent substrate and the insulating layer may be surrounded by a reflective resin, and a phosphor layer may be provided on the surface of the transparent substrate exposed from the reflective resin.

上記目的を達成するため、本発明においては、透明基板上にｎ型窒化物半導体層及びｐ型窒化物半導体層を形成する工程と、ｎ型窒化物半導体層及びｐ型窒化物半導体層上に、ｎ側電極及びｐ側電極を形成する工程と、ｎ型窒化物半導体層及びｐ型窒化物半導体層上に、ｎ側電極及びｐ側電極の部分に貫通孔を有する絶縁層を形成する工程と、絶縁層上の貫通孔の位置に２個の略長方形の開口を有するメッキレジスト層を形成する工程と、貫通孔及び開口内に金属層を形成するメッキ工程と、メッキレジスト層を除去して開口内の金属層を外部接続用電極として形成する工程とを有することを特徴とする。   To achieve the above object, in the present invention, a step of forming an n-type nitride semiconductor layer and a p-type nitride semiconductor layer on a transparent substrate, and an n-type nitride semiconductor layer and a p-type nitride semiconductor layer are formed. , Forming an n-side electrode and a p-side electrode, and forming an insulating layer having through holes in the n-side electrode and the p-side electrode on the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. A step of forming a plating resist layer having two substantially rectangular openings at the position of the through hole on the insulating layer, a plating step of forming a metal layer in the through hole and the opening, and removing the plating resist layer And forming a metal layer in the opening as an external connection electrode.

また、大判の透明基板上に、ＦＣ実装型ＬＥＤを複数個形成し、切断分離工程により複数のＦＣ実装型ＬＥＤを同時に製造すると良い。   Also, it is preferable to form a plurality of FC-mounted LEDs on a large transparent substrate and simultaneously manufacture a plurality of FC-mounted LEDs by a cutting and separating process.

上記の如く、本発明によれば、絶縁層の上面に２個の平行配置された略長方形の外部接続用電極を形成し、この２個の外部接続用電極を絶縁層に形成された貫通孔を通して、ｎ側電極及びｐ側電極に接続しているので、発光効率が高く、フリップチップ実装における位置決め及び実装のときの電気的接続の信頼性が高いＦＣ実装型ＬＥＤ及びその製造方法を提供することができる。   As described above, according to the present invention, two parallel external connection electrodes arranged in parallel are formed on the upper surface of the insulating layer, and the two external connection electrodes are formed in the insulating layer. Through the connection to the n-side electrode and the p-side electrode, there is provided an FC-mounting LED having high luminous efficiency and high reliability in electrical connection during positioning and mounting in flip-chip mounting, and a method for manufacturing the same be able to.

本発明の第１の実施形態におけるＦＣ実装型ＬＥＤの構成を示す断面図である。It is sectional drawing which shows the structure of FC mounting type LED in the 1st Embodiment of this invention. 図１に示すＦＣ実装型ＬＥＤの下面図である。It is a bottom view of FC mounting type LED shown in FIG. 図１に示すＦＣ実装型ＬＥＤの絶縁層を除去した下面図である。It is the bottom view which removed the insulating layer of FC mounting type LED shown in FIG. 本発明の第２の実施形態である、集合方式によるＦＣ実装型ＬＥＤの製造方法を示す工程図である。It is process drawing which shows the manufacturing method of FC mounting type LED by the assembly system which is the 2nd Embodiment of this invention. 図４−１の続きの工程を示す工程図である。FIG. 4 is a process diagram illustrating a process subsequent to that of FIG. 4-1. 本発明の蛍光型ＬＥＤの構成を示す断面図である。It is sectional drawing which shows the structure of fluorescent type LED of this invention. 本発明の他の蛍光型ＬＥＤの構成を示す断面図である。It is sectional drawing which shows the structure of the other fluorescent type LED of this invention. 従来のＦＣ実装型ＬＥＤの構成を示す断面図である。It is sectional drawing which shows the structure of the conventional FC mounting type LED. 図７に示すＦＣ実装型ＬＥＤの下面図である。It is a bottom view of FC mounting type LED shown in FIG. 図７に示すＦＣ実装型ＬＥＤの絶縁層を除去した下面図である。It is the bottom view which removed the insulating layer of FC mounting type LED shown in FIG. 従来のＦＣ実装型ＬＥＤの他の構成を示す断面図である。It is sectional drawing which shows the other structure of the conventional FC mounting type LED. 図１０に示すＦＣ実装型ＬＥＤの下面図である。It is a bottom view of FC mounting type LED shown in FIG. 図１０に示すＦＣ実装型ＬＥＤの絶縁層を除去した下面図である。It is the bottom view which removed the insulating layer of FC mounting type LED shown in FIG.

［第１の実施形態：ＦＣ実装型ＬＥＤの構成の説明（図１−図３）］
以下図面により、本発明の実施形態を説明する。図１は、本発明の第１の実施形態における、ＦＣ実装型ＬＥＤの断面図である。図２は、そのＬＥＤ下面図であり、図３が、図２における絶縁層を除去して、ｎ型窒化物半導体層及びｐ型窒化物半導体層と、ｎ側電極及びｐ側電極の構成を見えるようにした、ＬＥＤ下面図である。 [First Embodiment: Description of Configuration of FC-Mounted LED (FIGS. 1 to 3)]
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view of an FC-mounted LED in the first embodiment of the present invention. FIG. 2 is a bottom view of the LED, and FIG. 3 shows the configuration of the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, and the n-side electrode and the p-side electrode after removing the insulating layer in FIG. It is LED bottom view made visible.

図１において、ＦＣ実装型ＬＥＤ１０は、透明基板１であるサファイア基板上に形成された、ｎ型窒化物半導体層２及びｐ型窒化物半導体層３と、このｎ型窒化物半導体層２及びｐ型窒化物半導体層３上に形成された、ｎ側電極４及びｐ側電極５を有して構成されている。また、これら半導体層は、樹脂材料より構成される絶縁層６で被覆されている。なお、この絶縁層６には、スルーホール６ａ，６ｂが設けられており、絶縁層６の下面側に設けられた外部接続電極７，８は、スルーホール６ａ，６ｂの内部に設けられた接続電極１１，１２を介して、ｎ側電極４及びｐ側電極５にそれぞれ接続されている。   In FIG. 1, an FC-mounted LED 10 includes an n-type nitride semiconductor layer 2 and a p-type nitride semiconductor layer 3 formed on a sapphire substrate, which is a transparent substrate 1, and the n-type nitride semiconductor layer 2 and p. The n-side electrode 4 and the p-side electrode 5 are formed on the type nitride semiconductor layer 3. These semiconductor layers are covered with an insulating layer 6 made of a resin material. The insulating layer 6 is provided with through holes 6a and 6b, and the external connection electrodes 7 and 8 provided on the lower surface side of the insulating layer 6 are connected to the inside of the through holes 6a and 6b. The electrodes 11 and 12 are connected to the n-side electrode 4 and the p-side electrode 5, respectively.

また、図２に示す様に、この外部接続電極７，８は、絶縁層６の下面に長方形状に、ＦＣ実装型ＬＥＤ１０の側方に沿って平行に配設されている。なお、図中の点線で示す矩形形状は、ＬＥＤで発光する光を反射する部材で形成された、ｎ側電極４及びｐ側電極５を示し、点線で示す円形形状は、絶縁層６に設けたスルーホール６ａ，６ｂを示している。   In addition, as shown in FIG. 2, the external connection electrodes 7 and 8 are arranged in a rectangular shape on the lower surface of the insulating layer 6 in parallel along the side of the FC-mounted LED 10. In addition, the rectangular shape shown by the dotted line in the figure shows the n-side electrode 4 and the p-side electrode 5 formed of a member that reflects light emitted from the LED, and the circular shape shown by the dotted line is provided in the insulating layer 6. The through holes 6a and 6b are shown.

なお、このｐ側電極は、ｎ型窒化物半導体層２とｐ型窒化物半導体層３間で発生する光を、図１の矢印で示す方向に効率良く導き出すために、ｐ型窒化物半導体層３表面の略全面に形成してある。また、ここで外部接続電極７，８の形状は、素子の外形サイズが小さくなったとしても、実装基板との接続が容易とする為に、ｐ型窒化物半導体層３表面の略全面に形成した。その理由については、後段で詳細に説明する。   Note that this p-side electrode is used to efficiently derive light generated between the n-type nitride semiconductor layer 2 and the p-type nitride semiconductor layer 3 in the direction indicated by the arrow in FIG. 3 formed on substantially the entire surface. In addition, the external connection electrodes 7 and 8 are formed on substantially the entire surface of the p-type nitride semiconductor layer 3 in order to facilitate connection with the mounting substrate even if the external size of the element is reduced. did. The reason will be described in detail later.

また、図３に示す様に、透明基板１の略全面に形成されたｎ型窒化物半導体層２のコーナー部分には、小さな露出部分２ａを残して、ｐ型窒化物半導体層３が形成されており、このｎ型窒化物半導体層２とｐ型窒化物半導体層３とが積層された部分（ｐ型窒化物半導体層３の同じ面積であって、ｐ側電極が形成された領域）が、ＬＥＤとしての発光面Ｈとなる。そして、ｎ型窒化物半導体層２の露出部分２ａに形成されたｎ側電極４と、ｐ型窒化物半導体層３に形成されたｐ側電極５は、図１に示す如く、接続電極１１，１２を介して外部接続電極７，８に接続される。   Further, as shown in FIG. 3, a p-type nitride semiconductor layer 3 is formed at a corner portion of the n-type nitride semiconductor layer 2 formed on substantially the entire surface of the transparent substrate 1 leaving a small exposed portion 2a. A portion where the n-type nitride semiconductor layer 2 and the p-type nitride semiconductor layer 3 are stacked (a region where the p-type nitride semiconductor layer 3 has the same area and the p-side electrode is formed) The light emitting surface H as an LED. As shown in FIG. 1, the n-side electrode 4 formed on the exposed portion 2a of the n-type nitride semiconductor layer 2 and the p-side electrode 5 formed on the p-type nitride semiconductor layer 3 are connected as shown in FIG. 12 is connected to the external connection electrodes 7 and 8.

すなわち、本実施形態におけるＬＥＤの構成は、図３に示す如く、ｎ型窒化物半導体層２の露出部分２ａの面積を小さくし、発光面Ｈの面積を出来るだけ大きくして発光効率を上げられるＬＥＤ構成としている。そして、外部接続電極７，８の構成は、図１、図２に示す如く、絶縁層６の下面側に、大面積で長方形の電極をＦＣ実装型ＬＥＤ１０の側方に沿って平行に配設されて、この外部接続電極７，８が、スルーホール６ａ，６ｂの内部に設けられた接続電極１１，１２を介して、小面積のｎ側電極４及びｐ側電極５に接続されている。   That is, in the configuration of the LED in this embodiment, as shown in FIG. 3, the area of the exposed portion 2 a of the n-type nitride semiconductor layer 2 can be reduced and the area of the light emitting surface H can be increased as much as possible to increase the luminous efficiency. The LED configuration is used. As shown in FIGS. 1 and 2, the external connection electrodes 7 and 8 are arranged in parallel on the lower surface side of the insulating layer 6 along the side of the FC-mounted LED 10 on the lower surface side of the insulating layer 6. The external connection electrodes 7 and 8 are connected to the n-side electrode 4 and the p-side electrode 5 having a small area through the connection electrodes 11 and 12 provided in the through holes 6a and 6b.

上記構成によれば、ＦＣ実装型ＬＥＤ１０を外部装置の回路基板に実装するときに、ＦＣ実装型ＬＥＤ１０の側方に沿って平行に配設された外部接続電極７，８が、外部装置の回路基板に設けられた電極パターン上に平行に載置されるため、フリップチップ実装におけるＬＥＤの位置決めが容易となる。また本構成は、ＬＥＤ素子外形に対して外部接続端子７，８を十分大きくすることができる形態であるので、回路基板との電気的接続の信頼性が、極めて高いものとなる。また、本発明の構成は、ＦＣ実装型ＬＥＤ１０の形状が小さくて、回路基板との実装が難しい場合に、特に有効となる。   According to the above configuration, when the FC-mounted LED 10 is mounted on the circuit board of the external device, the external connection electrodes 7 and 8 arranged in parallel along the side of the FC-mounted LED 10 are connected to the circuit of the external device. Since the electrodes are placed in parallel on the electrode pattern provided on the substrate, positioning of the LED in flip chip mounting is facilitated. Moreover, since this structure is a form which can make the external connection terminals 7 and 8 large enough with respect to a LED element external shape, the reliability of the electrical connection with a circuit board becomes a very high thing. The configuration of the present invention is particularly effective when the shape of the FC-mounted LED 10 is small and mounting on a circuit board is difficult.

なお、このｐ型窒化物半導体層３が除去されたエリアは、ＬＥＤが発光しない領域となるが、この部分には反射性の高い材料で形成されたｎ側電極が形成してあるので、発光面Ｈで発生する光の漏れ光を、図１の矢印の方向に反射させることが出来る。   The area where the p-type nitride semiconductor layer 3 is removed is a region where the LED does not emit light, but the n-side electrode made of a highly reflective material is formed in this portion, so that the light emission Light leaking from the surface H can be reflected in the direction of the arrow in FIG.

また、上記説明では、図１に示す様に、ｐ側電極５をｐ型窒化物半導体層３の略全面に形成した例を示したが、ここでは図示しないが、このｐ側電極５をｎ側電極４程度の大きさとし、絶縁層６の表面に設ける外部接続電極７，８を、反射性が高い金属材料でもって絶縁層６の略全面に形成した形態としても良い。   In the above description, as shown in FIG. 1, an example in which the p-side electrode 5 is formed on substantially the entire surface of the p-type nitride semiconductor layer 3 is shown. The external connection electrodes 7 and 8 provided on the surface of the insulating layer 6 may be approximately the same size as the side electrode 4 and may be formed on a substantially entire surface of the insulating layer 6 with a highly reflective metal material.

上記構成すれば、回路基板との電気的接続の信頼性をより向上させるだけでなく、図１の矢印とは反対側に導出される漏れ光を、絶縁層６表面に大きく形成された外部接続電極７，８でもって矢印方向に導くことができる。これにより、従来の構成に比べ、自発光する光の光利用効率がより向上する。さらに、上記構成によれば、外部接続電極７、８を介して接続する、外部回路の回路基板に対する発光面の水平を容易に確保できるので、ＦＣ実装型ＬＥＤを実装した後の光指向特性が、常に一定となるという利点もある。   With the above configuration, not only the reliability of the electrical connection with the circuit board is further improved, but also the external connection in which the leakage light led out on the side opposite to the arrow in FIG. The electrodes 7 and 8 can guide the direction of the arrow. Thereby, compared with the conventional structure, the light use efficiency of the self-light-emitting light improves more. Furthermore, according to the above configuration, since the light emitting surface connected to the circuit board of the external circuit connected via the external connection electrodes 7 and 8 can be easily secured, the light directivity characteristic after mounting the FC mounted LED is improved. There is also an advantage that it is always constant.

［第２の実施形態：ＦＣ実装型ＬＥＤの製造方法の説明（図４−１、図４−２、図５）］
次に、図４−１、図４−２、および図５により、本発明の第２の実施形態である、集合方式によるＦＣ実装型ＬＥＤの製造方法について説明する。図４−１は、本発明の第２の実施形態である、集合方式によるＦＣ実装型ＬＥＤの製造方法を示す工程図である。図４−２は、図４−１の続きの工程図である。また、図５は、本実施形態におけるＦＣ実装型ＬＥＤの完成体を示す断面図である。 [Second Embodiment: Description of Manufacturing Method of FC-Mounted LED (FIGS. 4-1, 4-2, FIG. 5)]
Next, with reference to FIGS. 4-1, 4-2, and 5, a method for manufacturing an FC-mounted LED according to the collective system, which is the second embodiment of the present invention, will be described. FIGS. 4-1 is process drawing which shows the manufacturing method of FC mounting type LED by the collective system which is the 2nd Embodiment of this invention. FIG. 4-2 is a process diagram subsequent to FIG. 4-1. FIG. 5 is a cross-sectional view showing a completed FC-mounted LED according to this embodiment.

まず、図４−１において、まず（Ａ）半導体層形成工程により、サファイア基板である透明基板１上に、ｎ型窒化物半導体層２及びｐ型窒化物半導体層３を、ＭＯＣＶＤ法により順次形成する。なお、このとき集合方式によるＦＣ実装型ＬＥＤの製造方法を採用する場合には、大判の透明基板１上に複数個のＬＥＤを形成できるように、ｎ型窒化物半導体層２及びｐ型窒化物半導体層３を設ける必要がある。したがって、ここでは透明基板１上の略全面にｎ型窒化物半導体層２とｐ型窒化物半導体層３を形成した後に、フォトリソグラフィー法により、このｎ型窒化物半導体層２の露出部分２ａを形成している。   First, in FIG. 4A, first, an n-type nitride semiconductor layer 2 and a p-type nitride semiconductor layer 3 are sequentially formed by MOCVD on a transparent substrate 1 that is a sapphire substrate by (A) semiconductor layer formation step. To do. At this time, when the manufacturing method of the FC mounting type LED by the collective method is adopted, the n-type nitride semiconductor layer 2 and the p-type nitride are formed so that a plurality of LEDs can be formed on the large transparent substrate 1. It is necessary to provide the semiconductor layer 3. Therefore, here, after forming the n-type nitride semiconductor layer 2 and the p-type nitride semiconductor layer 3 on substantially the entire surface of the transparent substrate 1, the exposed portion 2a of the n-type nitride semiconductor layer 2 is formed by photolithography. Forming.

次に、（Ｂ）素子面電極形成工程により、ｎ型窒化物半導体層２の露出部分２ａにｎ側電極４を形成し、ｐ型窒化物半導体層３表面の略全面にｐ側電極５を形成する。次に、（Ｃ）絶縁層形成工程により、素子及び電極が形成された全面を覆うように絶縁層６を形成し、フォトグラフィー法によりスルーホール６ａ，６ｂを形成する。なお、本実施形態においては絶縁層６としてポリイミド樹脂を用いたが、本発明はこれに限定されず、他の樹脂層や、ＳｉＯ２やセラミック等の無機系絶縁層を使用しても良い。   Next, by (B) element surface electrode forming step, the n-side electrode 4 is formed on the exposed portion 2 a of the n-type nitride semiconductor layer 2, and the p-side electrode 5 is formed on substantially the entire surface of the p-type nitride semiconductor layer 3. Form. Next, the insulating layer 6 is formed so as to cover the entire surface on which the elements and electrodes are formed by (C) insulating layer forming step, and the through holes 6a and 6b are formed by photolithography. In the present embodiment, polyimide resin is used as the insulating layer 6. However, the present invention is not limited to this, and other resin layers or inorganic insulating layers such as SiO2 and ceramics may be used.

次に、（Ｄ）メッキレジスト形成工程により、絶縁層６の上面にメッキレジスト膜１５を形成する。メッキレジスト膜１５の材料としては、ネガ型またはポジ型の感光性レジストを用いることができる。この感光性レジストは、スピンコートやスプレーコート等の知られた方法で塗布したのち、乾燥することで１０μｍ程度の膜厚に制膜できる。その後、フォトマスクを使った露光現像処理を行うことで、所望のパターンのメッキレジスト膜１５を得ることができる。なお、このメッキレジスト膜１５には、絶縁層６のスルーホール６ａ，６ｂの位置に電極形成用開口１５ａ，１５ｂが形成されている。   Next, a plating resist film 15 is formed on the upper surface of the insulating layer 6 by (D) a plating resist forming step. As a material of the plating resist film 15, a negative or positive photosensitive resist can be used. This photosensitive resist can be coated to a film thickness of about 10 μm by applying it by a known method such as spin coating or spray coating and then drying. Thereafter, an exposure development process using a photomask is performed, whereby a plating resist film 15 having a desired pattern can be obtained. In the plating resist film 15, electrode forming openings 15a and 15b are formed at the positions of the through holes 6a and 6b of the insulating layer 6.

次に、図４−２に示す（Ｅ）メッキ工程により、Ｎｉ、Ａｕ等の金属メッキを行うことにより、メッキレジスト膜１５の電極形成用開口１５ａ，１５ｂの部分に金属層１６を形成する。   Next, the metal layer 16 is formed in the electrode forming openings 15a and 15b of the plating resist film 15 by performing metal plating of Ni, Au or the like by the (E) plating process shown in FIG.

次に、（Ｆ）レジスト剥離工程により、剥離液浴槽に所定の時間浸漬することで、不要となったメッキレジスト膜１５を除去することにより、絶縁層６の上面に、金属層１６を露出させる。なお、前述のネガ型感光性レジストの剥離液としては、アルキルベンゼンスルフォン酸を主成分とする有機薬液を用いることができる。また、アルカリ可溶樹脂を主成分とするポジ型感光性レジストの剥離液としては、有機アミンと極性溶剤の混合物を用いることができる。これにより、メッキレジスト膜１５の電極形成用開口１５ａの位置には外部接続電極７が、電極形成用開口１５ｂの位置には外部接続電極８が形成される。なお、この外部接続電極７、８は、金属層１６を形成するメッキ金属によって、ｎ側電極４及びｐ側電極５にそれぞれ接続されている。   Next, the metal layer 16 is exposed on the upper surface of the insulating layer 6 by removing the unnecessary plating resist film 15 by immersing in a stripping solution bath for a predetermined time by (F) resist stripping step. . In addition, as a stripping solution for the above-mentioned negative photosensitive resist, an organic chemical solution mainly composed of alkylbenzene sulfonic acid can be used. Moreover, as a stripping solution for a positive photosensitive resist mainly composed of an alkali-soluble resin, a mixture of an organic amine and a polar solvent can be used. Thus, the external connection electrode 7 is formed at the position of the electrode formation opening 15a of the plating resist film 15, and the external connection electrode 8 is formed at the position of the electrode formation opening 15b. The external connection electrodes 7 and 8 are connected to the n-side electrode 4 and the p-side electrode 5 by plating metal forming the metal layer 16, respectively.

次に、（Ｇ）切断分離工程により、（Ｆ）工程にて形成された構造体をブレード１７によって切断することにより、大判の透明基板１から単個のＬＥＤを分離する。上記工程を経ることで、（Ｈ）工程に示した複数のＦＣ実装型ＬＥＤ１０を得ることが出来る。   Next, a single LED is separated from the large transparent substrate 1 by cutting the structure formed in the (F) step with the blade 17 in the (G) cutting and separating step. By passing through the said process, the some FC mounting type LED10 shown to the (H) process can be obtained.

最後に、図５に示す様に、単個に切断したＦＣ実装型ＬＥＤ１０の透明基板１の外周および上部表面に、蛍光粒子を含有する樹脂キャップ（蛍光樹脂２１）を被せて固定することで、目的の蛍光型ＬＥＤ２０が完成する。なおここでは、ＬＥＤとして青色ＬＥＤを、蛍光樹脂として、ＹＡＧ蛍光粒子を混入した樹脂を用いているので、この蛍光型ＬＥＤ２０が疑似白色ＬＥＤとなる。   Finally, as shown in FIG. 5, by covering and fixing the resin cap (fluorescent resin 21) containing fluorescent particles on the outer periphery and upper surface of the transparent substrate 1 of the FC-mounted LED 10 cut into pieces, The target fluorescent LED 20 is completed. Here, since the blue LED is used as the LED and the resin mixed with YAG fluorescent particles is used as the fluorescent resin, the fluorescent LED 20 is a pseudo white LED.

この様に、上述した図４−１、図４−２および図５に示した上記集合方式によるＦＣ実装型ＬＥＤの製造方法によれば、メッキレジスト膜１５を用いた金属メッキにより、メッキレジスト膜１５の電極形成用開口１５ａ，１５ｂの部分に、金属層１６を形成することができ、外部接続電極７、８と接続電極１１，１２を同時に形成することができる。この結果、大面積で長方形の外部接続電極７、８を備えた複数のＦＣ実装型ＬＥＤ１０を、容易に量産製造することができる。   As described above, according to the method of manufacturing the FC-mounted LED by the collective method shown in FIGS. 4A, 4B, and 5 described above, the plating resist film is obtained by metal plating using the plating resist film 15. The metal layer 16 can be formed on the 15 electrode forming openings 15a and 15b, and the external connection electrodes 7 and 8 and the connection electrodes 11 and 12 can be formed simultaneously. As a result, it is possible to easily mass-produce and manufacture a plurality of FC-mounted LEDs 10 having the large area and rectangular external connection electrodes 7 and 8.

［第３の実施形態：蛍光型ＬＥＤの他の構成の説明（図６）］
次に、図６により本発明の第３の実施形態について説明する。図６は、本発明の第３の実施形態における蛍光型ＬＥＤ３０の構成を示す断面図である。 [Third Embodiment: Description of Other Configuration of Fluorescent LED (FIG. 6)]
Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 6 is a cross-sectional view showing the configuration of the fluorescent LED 30 according to the third embodiment of the present invention.

図６に示す様に、本実施形態の蛍光型ＬＥＤ３０は、第１の実施形態と同様に、透明基板１の一方の主面上にｎ型窒化物半導体層２、ｐ型窒化物反動体層３、ｎ側電極４、ｐ側電極５、絶縁層６、接続電極１１、１２、外部接続電極７、８を備えたＦＣ実装型ＬＥＤ１０を有する。このＦＣ実装型ＬＥＤ１０の構成は、図１に示すＦＣ実装型ＬＥＤ１０と同じであり、同一部材には同一番号を付し、ここでの重複する説明は省略する。   As shown in FIG. 6, the fluorescent LED 30 of the present embodiment has an n-type nitride semiconductor layer 2 and a p-type nitride reaction body layer on one main surface of the transparent substrate 1, as in the first embodiment. 3, an FC-mounted LED 10 having an n-side electrode 4, a p-side electrode 5, an insulating layer 6, connection electrodes 11 and 12, and external connection electrodes 7 and 8. The configuration of the FC-mounted LED 10 is the same as that of the FC-mounted LED 10 shown in FIG. 1, and the same members are denoted by the same reference numerals, and redundant description is omitted here.

更に、本実施形態の蛍光型ＬＥＤ３０は、ＦＣ実装型ＬＥＤ１０の透明基板１及び絶縁層６の側面を、ＬＥＤからの発光を反射する、例えば白色顔料を混入した反射性樹脂３２でもって囲み、図中の透明基板１の最表面から露出する透明基板１を、蛍光粒子を混入する蛍光樹脂３１で被覆した形態としている。なおここでは、ＬＥＤとして青色ＬＥＤを、蛍光樹脂として、ＹＡＧ蛍光粒子を混入した樹脂を用いているので、蛍光型ＬＥＤ３０は疑似白色ＬＥＤとなる。   Furthermore, the fluorescent LED 30 of the present embodiment surrounds the side surfaces of the transparent substrate 1 and the insulating layer 6 of the FC-mounted LED 10 with a reflective resin 32 that reflects light emitted from the LED, for example, mixed with a white pigment. The transparent substrate 1 exposed from the outermost surface of the transparent substrate 1 is coated with a fluorescent resin 31 mixed with fluorescent particles. Here, since the blue LED is used as the LED and the resin mixed with YAG fluorescent particles is used as the fluorescent resin, the fluorescent LED 30 is a pseudo white LED.

上記形態とすれば、反射性樹脂３２と、発光面Ｈの殆どを覆って形成されたｎ側電極４およびｐ側電極５でもって、ＬＥＤからの発光を効率良く図中の上部方向に向けて出射させることが出来る。   If it is set as the said form, with the reflective resin 32 and the n side electrode 4 and the p side electrode 5 which were formed covering most light emitting surfaces H, the light emission from LED will be efficiently directed to the upper direction in a figure. It can be emitted.

次に、上記蛍光型ＬＥＤ３０の製造方法を示す。
まず、第２の実施形態に示したと同様に、図４−１（Ａ）〜（Ｄ）工程、図４−２（Ｅ）〜（Ｆ）工程を行い、（Ｆ）工程の構成体を得る。 Next, a method for manufacturing the fluorescent LED 30 will be described.
First, similarly to the second embodiment, the steps of FIGS. 4-1 (A) to (D) and FIGS. 4-2 (E) to (F) are performed to obtain the structure of the step (F). .

次に、ここでは図示しないが、ブレード１７で、発光面および電極形成領域を避けて、隣り合うＬＥＤの中間の位置から（図の上側から）、透明基板１が露出する程度までの溝（ハーフダイシング溝）を設ける。なお、ここで形成する溝は、ＬＥＤの外周を囲んで形成される。その後、この溝に白色顔料を混入した反射性樹脂をスクリーン印刷法等により充填する。   Next, although not shown here, the blade 17 avoids the light emitting surface and the electrode formation region, and from the middle position between adjacent LEDs (from the upper side of the figure) to a groove (half half) to the extent that the transparent substrate 1 is exposed. Dicing grooves) are provided. In addition, the groove | channel formed here is formed surrounding the outer periphery of LED. Thereafter, the groove is filled with a reflective resin mixed with a white pigment by a screen printing method or the like.

次に、この溝に充填された反射性樹脂の表面と、露出している透明基板１の表面に、ＹＡＧ蛍光粒子を含む樹脂材料をスクリーン印刷法により塗布する。なおここで用いる樹脂材料は、熱硬化性樹脂材料である。その後、加熱処理等を行うことで、この樹脂材料を完全に硬化させて、ＦＣ実装型ＬＥＤ１０の表面に蛍光樹脂３１を固着させる。   Next, a resin material containing YAG fluorescent particles is applied to the surface of the reflective resin filled in the groove and the exposed surface of the transparent substrate 1 by screen printing. The resin material used here is a thermosetting resin material. Thereafter, the resin material is completely cured by performing a heat treatment or the like, and the fluorescent resin 31 is fixed to the surface of the FC-mounted LED 10.

その後の工程は、第２の実施形態と同じで、図４における工程（Ｇ）切断分離工程で、上記溝に充填した反射性樹脂の直上から、ハーフダイシングのときの溝幅よりも狭幅のブレードで個々のＦＣ実装型ＬＥＤ１０の分離することで、透明基板１の外周が反射性樹脂で囲まれた、目的の蛍光型ＬＥＤ３０（図６）が完成する。   The subsequent steps are the same as in the second embodiment, and in the step (G) cutting / separating step in FIG. 4, the width is narrower than the groove width at the time of half dicing from directly above the reflective resin filled in the groove. By separating the individual FC-mounted LEDs 10 with a blade, the target fluorescent LED 30 (FIG. 6) in which the outer periphery of the transparent substrate 1 is surrounded by a reflective resin is completed.

上記製造工程によれば、第２の実施形態で示した製造方法と同様に、大面積で長方形の外部接続電極７、８を備えた複数の蛍光型ＬＥＤ３０を、容易に製造することができる。   According to the manufacturing process, as in the manufacturing method shown in the second embodiment, it is possible to easily manufacture a plurality of fluorescent LEDs 30 including the large-area and rectangular external connection electrodes 7 and 8.

１、１０１，２０１ 透明基板
２、１０２，２０２ ｎ型窒化物半導体層
２ａ，１０２ａ、２０２ａ 露出部
３，１０３，２０３ ｐ型窒化物半導体層
４，１０４，２０４ ｎ側電極
５，１０５，２０５ ｐ側電極
６，１０６，２０６ 絶縁層
６ａ、６ｂ、１０６ａ、１０６ｂ スルーホール
７，１０７，２０７ 外部接続電極
８，１０８，２０８ 外部接続電極
１０，１００，２００ ＦＣ実装型ＬＥＤ
１１、１２、１１１，１１２ 接続電極
１５ メッキレジスト膜
１５ａ，１５ｂ 電極形成用開口
１６ 金属層
１７ ブレード
２０、３０ 蛍光型ＬＥＤ
２１、３１ 蛍光樹脂
３２ 反射性樹脂
２０６ａ，２０６ｂ 開口部 1, 101, 201 Transparent substrate 2, 102, 202 n-type nitride semiconductor layer 2a, 102a, 202a Exposed portion 3, 103, 203 p-type nitride semiconductor layer 4, 104, 204 n-side electrode 5, 105, 205 p Side electrode 6, 106, 206 Insulating layer 6a, 6b, 106a, 106b Through hole 7, 107, 207 External connection electrode 8, 108, 208 External connection electrode 10, 100, 200 FC mounting type LED
11, 12, 111, 112 Connection electrode 15 Plating resist film 15a, 15b Electrode forming opening 16 Metal layer 17 Blade 20, 30 Fluorescent LED
21, 31 Fluorescent resin 32 Reflective resin 206a, 206b Opening

Claims (7)

透明基板の上面に形成された、ｎ型窒化物半導体層及びｐ型窒化物半導体層と、前記ｎ型窒化物半導体層及びｐ型窒化物半導体層上に形成された、ｎ側電極及びｐ側電極とを有するフリップチップ実装型ＬＥＤにおいて、
前記ｎ型窒化物半導体層及びｐ型窒化物半導体層上に、ｎ側電極及びｐ側電極の部分に貫通孔を有して形成された絶縁層と、前記絶縁層の上面に平行に形成された２個の略長方形の外部接続用電極とを有し、
前記２個の外部接続用電極は、前記貫通孔を通して前記ｎ側電極及びｐ側電極にそれぞれ接続されていることを特徴とするフリップチップ実装型ＬＥＤ。 An n-type nitride semiconductor layer and a p-type nitride semiconductor layer formed on the upper surface of the transparent substrate, and an n-side electrode and a p-side formed on the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. In a flip chip mounting type LED having an electrode,
An insulating layer formed on the n-type nitride semiconductor layer and the p-type nitride semiconductor layer with through-holes in the n-side electrode and the p-side electrode, and is formed in parallel with the upper surface of the insulating layer. Two substantially rectangular external connection electrodes,
The flip-chip mounted LED, wherein the two external connection electrodes are respectively connected to the n-side electrode and the p-side electrode through the through hole. 前記ｎ側電極が、前記ｎ型窒化物半導体層のコーナー部分に形成された、前記ｎ型窒化物半導体層とｐ型窒化物半導体層との非積層部分に設けられていることを特徴とする請求項１に記載のフリップチップ実装型ＬＥＤ。   The n-side electrode is provided in a non-stacked portion of the n-type nitride semiconductor layer and the p-type nitride semiconductor layer formed at a corner portion of the n-type nitride semiconductor layer. The flip chip mounting type LED according to claim 1. 前記絶縁層が、樹脂絶縁層であることを特徴とする請求項１または２に記載のフリップチップ実装型ＬＥＤ。   The flip-chip mounted LED according to claim 1, wherein the insulating layer is a resin insulating layer. 前記フリップチップ実装型ＬＥＤの透明基板の下面と、ｎ型窒化物半導体層及びｐ型窒化物半導体層の形成された側面を、蛍光体を分散させた樹脂で被覆したことを特徴とする請求項１から３の何れか一項に記載のフリップチップ実装型ＬＥＤ。   The lower surface of the transparent substrate of the flip chip mounting LED and the side surface on which the n-type nitride semiconductor layer and the p-type nitride semiconductor layer are formed are covered with a resin in which a phosphor is dispersed. The flip chip mounting type LED according to any one of claims 1 to 3. 前記透明基板および前記絶縁層の側面を反射性樹脂で囲み、当該反射性樹脂から露出する前記透明基板の表面に、蛍光体層が設けられていることを特徴とする請求項１から３のいずれか一項に記載のフリップチップ実装型ＬＥＤ。   4. The phosphor layer is provided on a surface of the transparent substrate that surrounds side surfaces of the transparent substrate and the insulating layer with a reflective resin and is exposed from the reflective resin. 5. The flip chip mounting type LED according to claim 1. 透明基板の上面にｎ型窒化物半導体層及びｐ型窒化物半導体層を形成する工程と、
前記ｎ型窒化物半導体層及びｐ型窒化物半導体層上に、ｎ側電極及びｐ側電極を形成する工程と、
前記ｎ型窒化物半導体層及びｐ型窒化物半導体層上に、前記ｎ側電極及びｐ側電極の部分に貫通孔を有する絶縁層を形成する工程と、
前記絶縁層上の前記貫通孔の位置に、２個の略長方形の開口を有するメッキレジスト層を形成する工程と、
前記貫通孔及び開口内に、金属層を形成するメッキ工程と、
前記メッキレジスト層を除去して、前記開口内の前記金属層を、外部接続用電極として形成する工程とを有する
ことを特徴とするフリップチップ実装型ＬＥＤの製造方法。 Forming an n-type nitride semiconductor layer and a p-type nitride semiconductor layer on the upper surface of the transparent substrate;
Forming an n-side electrode and a p-side electrode on the n-type nitride semiconductor layer and the p-type nitride semiconductor layer;
Forming an insulating layer having a through hole in the n-side electrode and the p-side electrode on the n-type nitride semiconductor layer and the p-type nitride semiconductor layer;
Forming a plating resist layer having two substantially rectangular openings at the positions of the through holes on the insulating layer;
A plating step of forming a metal layer in the through hole and the opening;
Removing the plating resist layer, and forming the metal layer in the opening as an electrode for external connection. A method for manufacturing a flip-chip mounting type LED. 大判の透明基板上に、前記フリップチップ実装型ＬＥＤを複数個形成し、切断分離工程により複数のフリップチップ実装型ＬＥＤを同時に製造することを特徴とする請求項６に記載のフリップチップ実装型ＬＥＤの製造方法。   7. The flip chip mounted LED according to claim 6, wherein a plurality of the flip chip mounted LEDs are formed on a large transparent substrate, and the plurality of flip chip mounted LEDs are manufactured simultaneously by a cutting and separating process. Manufacturing method.
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