JP2012227470A - Semiconductor light emitting device and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the types of members and simplify the manufacturing processes for downsizing a package even in an LED device including an LED element having a sapphire substrate.SOLUTION: An LED device 10 includes a sapphire substrate 14 and an LED element 16 having protruding electrodes 18, 19. A phosphor sheet 11 is placed on an upper surface of the sapphire substrate 14, and the phosphor sheet 11 and the sapphire substrate 14 are bonded to each other through an adhesive layer 13. A side part of the LED element 16 is covered by a white reflection member 17. The protruding electrodes 18, 19 of the LED element 16 serve as connection electrodes to a mother board.

Description

  The present invention relates to a structure of a semiconductor light emitting device effective for a chip size package (also referred to as CSP) and a manufacturing method thereof.

  As the brightness increases, semiconductor light-emitting elements (hereinafter referred to as LED elements unless otherwise specified) are also increased in size, and those having a size of about 1 mm × (0.5 to 1) mm have become available. Since this size is about the same as other chip components such as resistors, the semiconductor light-emitting device in which the LED element is packaged with resin or the like (hereinafter referred to as the LED device unless otherwise specified) has the same planar size as the LED element. It becomes desirable to have Since this package reflects the LED element size almost directly, it is sometimes called a chip size package (hereinafter referred to as CSP). CSP not only requires a small mounting area and requires fewer packaging members, but also allows the number of components mounted on the mother board to be easily changed according to the required brightness, so that the degree of freedom in designing lighting devices and the like There is a feature that increases.

  As an ultimate CSP, an LED device in which the chip size of an LED element matches the outer shape of a package is known (for example, FIG. 6 of Patent Document 1). FIG. 6A of Patent Document 1 is shown again in FIG. 12, and this LED device will be described. FIG. 12 is a cross-sectional view of the light emitting device 6 (LED device) converted to CSP. A phosphor layer 30 and a lens 32 are laminated on the upper surface of the laminate 12 (semiconductor layer). Under the laminated body 12, there are seed metals 22a and 22b, copper wiring layers 24a and 24b that remain without etching of the common electrode at the time of electrolytic plating, and columnar copper pillars 26a and 26b formed by electrolytic plating.

  The laminate 12 includes a p-type cladding layer 12a, a light emitting layer 12e, and an n-type cladding layer 12b. The lower surface of the laminated body 12 is covered with an insulating layer 20 that is partially opened. Solder balls 36a and 36b are attached to the lower portions of the copper pillars 26a and 26b. A reinforcing resin 28 is filled between the copper pillars 26a and 26b.

  The outer shape (planar) of the LED device 6 shown in FIG. The LED device 6 is obtained by dividing a wafer in which the LED devices 6 are arranged and connected, and is called WLP (wafer level package) because it is the smallest in the product group divided by CSP. is there. Since this LED device 6 removes the transparent insulating substrate originally on the laminate 12, the light from the light emitting layer 12e is hardly emitted in the lateral direction and only emitted upward (indicated by an arrow in the figure). . For this reason, the phosphor layer 30 may be provided only on the LED device 6.

  Usually, a laser is used to remove the transparent insulating substrate. In this case, however, the manufacturing apparatus becomes large and the manufacturing process becomes long. On the other hand, if the transparent insulating substrate is left, light will be emitted to the side of the LED element, which makes it difficult to handle. Therefore, there is a method of directing light directed to the side upward even if there is a transparent insulating substrate (for example, FIG. 1 of Patent Document 2). The light-emitting device (LED device) shown in FIG. 1 of Patent Document 2 covers the periphery of an LED element flip-chip mounted on a submount substrate with a light-reflective member, and upwardly emits light to be emitted sideways. Is going to be emitted.

JP 2010-141176 A (FIG. 6A) JP 2010-157638 A (FIG. 1)

  The LED device as shown in Patent Document 1 requires a step of removing the transparent insulating substrate. The LED device as shown in FIG. 1 of Patent Document 2 is not a CSP because the structure of the submount substrate is wider than the width of the LED element (about 2.5 times in FIG. 1 of Patent Document 2). Moreover, there are many types of members constituting the LED device.

  Therefore, the present invention has been made in view of the above problems, and even a LED device including an LED element having a transparent insulating substrate is a semiconductor light emitting device that is easy to manufacture by reducing the types of members when downsizing a package. An object is to provide an apparatus and a method for manufacturing the same.

The semiconductor light-emitting device of the present invention includes a semiconductor light-emitting element having a transparent insulating substrate and a semiconductor layer formed on the lower surface thereof, and a connection electrode for establishing connection with the mother substrate, and emits light from the semiconductor light-emitting element. In a semiconductor light-emitting device that converts a part of light in wavelength,
A white reflective member covering a side portion of the semiconductor light emitting element;
A phosphor sheet disposed on the opposite side of the transparent insulating substrate from the semiconductor layer and covering the transparent insulating substrate and the white reflective member;
An adhesive layer that bonds the phosphor sheet and the transparent insulating substrate;
The semiconductor light emitting device has a protruding electrode.

  The protruding electrode may be the connection electrode.

  The adhesive may be attached to the side surface of the semiconductor light emitting device.

  The fillet shape of the adhesive adhering to the side surface of the semiconductor light emitting device may be a reverse taper shape.

The white reflecting member covers the periphery of the protruding electrode together with the semiconductor light emitting element,
The connection electrode connected to the protruding electrode may be at the bottom of the white reflective member.

The method for manufacturing a semiconductor light emitting device of the present invention includes a semiconductor light emitting element having a transparent insulating substrate and a semiconductor layer formed on a lower surface thereof, and a connection electrode for connecting to the mother substrate, the semiconductor light emitting element In the manufacturing method of the semiconductor light emitting device for converting the wavelength of part of the light emitted from the
Preparing a phosphor sheet obtained by processing a resin containing a phosphor into a sheet, and a semiconductor light emitting device including a protruding electrode connected to the semiconductor layer;
An adhesive application step of applying an adhesive to the phosphor sheet or the transparent insulating substrate;
An adhesion step of adhering the phosphor sheet and the transparent insulating substrate;
A white reflecting member filling step of filling a side of the semiconductor light emitting element with a white reflecting member containing reflective fine particles;
An individualizing step for cutting the phosphor sheet and the white reflecting member to separate the semiconductor light emitting device.

  In the bonding step, the adhesive may be attached to the side surface of the semiconductor light emitting element.

  The fillet shape of the adhesive that adheres to the side surface of the semiconductor light emitting element in the bonding step may be a reverse taper shape.

  A dam material may be disposed on the phosphor sheet before the adhesive application step.

  In the white reflecting member filling step, the white reflecting member may be filled around the protruding electrode together with the side portion of the semiconductor light emitting device, and the connection electrode may be formed on the bottom surface of the white reflecting material by electrolytic plating. .

  In the semiconductor light emitting device of the present invention, since the side surfaces of the transparent insulating substrate and the semiconductor layer are covered with the white reflecting member, it is not necessary to remove the transparent insulating substrate. Further, the outer shape of the semiconductor light emitting element and the outer shape of the semiconductor light emitting device can be brought close to each other. Furthermore, since the phosphor sheet covering the transparent insulating substrate and the white reflecting member is provided, the structure becomes simple and the manufacturing becomes easy.

  According to the method for manufacturing a semiconductor light emitting device of the present invention, the outer shape of the semiconductor light emitting element and the outer shape of the semiconductor light emitting device can be made substantially equal without removing the transparent insulating substrate, and the light emitted from the semiconductor light emitting element is effectively used. A semiconductor light-emitting device that can be obtained is obtained. There are no submount substrates or reflection frames, and there are few types of components, and it is easy to manufacture because it combines general processes such as bonding and molding.

The sectional view of the LED device in a 1st embodiment of the present invention. The bottom view of the LED device shown in FIG. Sectional drawing of the LED element contained in the LED device shown in FIG. Explanatory drawing of the manufacturing process of the LED apparatus shown in FIG. Sectional drawing of the LED apparatus in 2nd Embodiment of this invention. Explanatory drawing of the manufacturing process of the LED apparatus shown in FIG. Sectional drawing of the LED apparatus in 3rd Embodiment of this invention. Explanatory drawing of the manufacturing process of the LED apparatus shown in FIG. Sectional drawing of the LED apparatus in 4th Embodiment of this invention. The bottom view before filling of the white reflective member of the LED device shown in FIG. Explanatory drawing of the manufacturing process of the LED apparatus shown in FIG. Sectional drawing of the LED apparatus of a prior art example.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. In the description of the drawings, the same or equivalent elements will be denoted by the same reference numerals, and redundant description will be omitted. For the sake of explanation, the scale of the members is changed as appropriate. Furthermore, the relationship with the invention specific matter described in the claims is described in parentheses.
(First embodiment)

A first embodiment of the present invention will be described in detail with reference to FIGS. First, the structure of the LED device 10 will be described with reference to FIGS. FIG. 1 is a cross-sectional view of an LED device 10 according to this embodiment. The LED device 10 includes a phosphor sheet 11 that converts the wavelength of emitted light on the upper surface of the LED element 16 around the LED element 16 having a sapphire substrate 14 (transparent insulating substrate) and a semiconductor layer 15 formed on the lower surface thereof. A white reflecting member 17 is provided on the side surface. There is an adhesive layer 13 between the phosphor sheet 11 and the sapphire substrate 14 to bond the phosphor sheet 11 and the sapphire substrate 14 together. Further, the protruding electrodes 18 and 1 connected to the semiconductor layer 15 of the LED element 16.
Reference numerals 9 denote an anode and a cathode, respectively, which are connection electrodes for connection to the mother substrate. Here, the mother board is a board on which the LED device 10 is mounted together with other electronic components such as resistors and capacitors.

  FIG. 2 is a view showing the bottom surface of the LED device 10. On the bottom surface, the white reflecting member 17 becomes the outer shape of the LED device 10, and the semiconductor layer 15 becomes the outer shape of the LED element 16 (see FIG. 1). The protruding electrodes 18 and 19 are inside the region occupied by the semiconductor layer 15. The bottom surface of the LED element 16 is 1.0 mm × 0.5 mm, and the width of the white reflecting member is 0.2 mm. As a result, the LED device 10 has a size of 1.4 mm × 0.9 mm, which is easy to handle with a surface mounter (surface mounter).

  The phosphor sheet 11 is obtained by kneading a phosphor into a silicone resin and processing it into a sheet shape, and has a thickness of about 100 μm. The adhesive layer 13 is also a thermosetting silicone adhesive having a thickness of approximately 100 μm or less. The white reflecting member 17 is also obtained by kneading and thermally curing reflective fine particles such as titanium oxide in a silicone resin.

  Next, the LED element 16 will be described with reference to FIG. FIG. 3 is a cross-sectional view of the LED element 16. The LED element 16 includes a semiconductor layer 15 on the lower surface of a sapphire substrate 14 having a thickness of about 100 to 200 μm. The semiconductor layer 15 is a stacked body of a light emitting layer 15b and an n-type semiconductor layer 15a on a p-type semiconductor layer 15c. The p-type semiconductor layer 15c is a stacked body of a metal layer made of a plurality of metals and p-type GaN, and has a thickness of about 1 μm. This metal layer includes a reflective layer, and directs light emitted downward from the light emitting layer 15b upward. The light emitting layer 15b has a thickness of about 100 nm. The N-type semiconductor layer 15a includes an n-type GanN layer and a buffer layer for adjusting a lattice constant, and has a thickness of about 5 μm. The insulating film 15d covers the semiconductor layer 15, and has openings in the region occupied by the p-type semiconductor layer 15c and the exposed region of the n-type semiconductor layer 15a. In each opening, the p-type semiconductor layer 15c and the protruding electrode 18, and the n-type semiconductor layer 15a and the protruding electrode 19 are connected. The protruding electrodes 18 and 19 are plated bumps formed by copper plating, have a thickness of 10 to 30 μm, and have a tin layer on the surface. In addition, since the exposed part of the n-type semiconductor layer 15a is small, a part of the protruding electrode 19 is stacked with the p-type semiconductor layer 15c via the insulating film 15d.

  Next, returning to FIG. 1, the light emission of the LED device 10 will be described. Of the blue light emitted from the light emitting layer 15b (see FIG. 3), the light directed directly upward is directly incident on the phosphor sheet 11. Blue light emitted from the light emitting layer 15b in a direction other than the upward direction is also reflected by the white reflecting member 17, the p-type semiconductor layer 15c (see FIG. 3), the interface of the sapphire substrate, etc., and enters the phosphor sheet 11 facing upward. A part of the blue light incident on the phosphor sheet 11 is wavelength-converted by the phosphor. The wavelength-converted light is emitted isotropically, but light other than upward components is repeatedly reflected and emitted upward in the same manner as the blue light described above. White light is obtained from the blue light emitted from the LED device 10 and the wavelength-converted light.

  Next, a method for manufacturing the LED device 10 will be described with reference to FIG. FIG. 4 is an explanatory diagram of the manufacturing process of the LED device 10. First, in the preparation step shown in (a), the phosphor sheet 11 and the LED element 16 are prepared. The fluorescent sheet is large and includes areas corresponding to a large number of LED devices 10. The LED element 16 already has protruding electrodes 18 and 19. In addition, although several hundred to several thousand LED elements are affixed to the large-sized phosphor sheet 11, two LED elements are illustrated for the sake of explanation (the same applies hereinafter). Further, since the phosphor sheet 11 is thin, it is installed on a support base, but is not shown (the same applies hereinafter). Each process of the present embodiment is limited to the processing of only one side of the phosphor sheet 11 and further uses gravity, so that it is shown upside down with respect to FIG. 1 (the same applies hereinafter).

  Next, in the adhesive material application step shown in (b), the adhesive material 13 b is applied to the phosphor sheet 11. The application may be performed by a printing method, and the section where the adhesive 13b is applied and the planar size of the LED element 16 are made equal. The adhesive 13b may be applied to the sapphire substrate 14 (see FIG. 1) of the LED element 16. In this case, once the LED element 16 is picked up by a picker (or sorter), an adhesive can be once applied to the LED element 16 and then attached to the phosphor sheet 11.

  Next, in the bonding step shown in (c), the sapphire substrate 14 (see FIG. 1) of the LED element 16 is attached to the phosphor sheet 11. The LED elements 16 may be arranged on the phosphor sheet 11 one by one with a picker or the like. It is also possible to arrange a plurality of LED elements 16 once in another pressure-sensitive adhesive sheet and affix the plurality of LED elements 16 to the phosphor sheet 11 at once. When the LED elements 16 are arranged on the phosphor sheet 11, the adhesive material 13 b is cured by heating to form the adhesive layer 13. This curing may be a temporary curing in which crosslinking is not complete.

  Next, in the white reflecting member filling step shown in (d), the white reflecting member 17 is filled in the side portion of the LED element, and then the white reflecting member 17 is cured by heating. At the time of filling, the outer peripheral portion of the phosphor sheet 11 is previously surrounded by a dam material (not shown), and the white reflecting member 17 accurately measured by the dispenser is dropped. Note that if the protruding electrodes 18 and 19 are set to be thicker, the white reflective member 17 is allowed to cover the semiconductor layer 15 (see FIG. 1) to some extent. Further, since the semiconductor layer 15 is covered with the insulating film 15d (see FIG. 3), even if the filling amount is slightly small, it is allowed.

Finally, in the individualization step shown in (e), the phosphor sheet 11 and the white reflecting member 17 are cut to separate the LED device 10 into individual pieces. A dicer is used for cutting. Prior to cutting, the phosphor sheet 11 is transferred onto the dicing tape from the above-described support. Since the defect occurrence rate can be lowered in the cutting process, electrical and optical inspection of each LED device 10 may be completed in a large format before the individualization process.
(Second Embodiment)

  In the first embodiment, as shown in FIG. 1 and the like, the area occupied by the adhesive layer 13 and the size of the upper surface of the sapphire substrate 14 match. However, there are cases where the adhesive may protrude when the LED element 16 is attached to the phosphor sheet 11. As an example of this, a second embodiment of the present invention will be described in detail with reference to FIGS.

  The bottom surface of the LED device 21 of this embodiment is equal to the bottom surface of the LED device 10 of the first embodiment shown in FIG. Therefore, a cross-sectional structure of the LED device 21 will be described with reference to FIG. FIG. 5 is a cross-sectional view of the LED device 21 in the present embodiment. In the LED device 21, the phosphor sheet 11 and the LED element 16 are the same as the LED device 10 of the first embodiment. The difference between the LED device 21 and the LED device 10 is that in the LED device 21, the adhesive protrudes from the region where the phosphor sheet 11 and the sapphire substrate 14 face each other, and the fillet 23a is formed between the side surface of the LED element 16 and the lower surface of the phosphor sheet. That is, the adhesive layer 23 and the white reflecting member 27 are deformed along with the fillet 23a.

  Next, the light emission of the LED device 21 will be described with reference to FIG. The light (blue light and wavelength-converted light) emitted to the side of the LED element 16 is reflected at the interface between the fillet 23 a and the white reflecting member 27 and finally emitted above the LED device 21. Others are the same as the LED device 10 of the first embodiment.

Next, a method for manufacturing the LED device 21 will be described with reference to FIG. FIG. 6 is an explanatory diagram of the manufacturing process of the LED device 21. The preparation process shown by (a) is the same as the preparation process shown by 1st Embodiment of Fig.4 (a). The adhesive application process shown in FIG. 4B is substantially the same as the adhesive application process shown in the first embodiment of FIG. 4B, but the adhesive 23b is formed on the sapphire substrate 14 so that the fillet 23a can be easily formed. It is applied wider than the lower surface. In the bonding step shown in (c), the fillet 23 a is formed when the LED element 16 is pressed against the phosphor sheet 11. When the adhesive 23b is cured, in the white reflecting member filling step shown in (d), the white reflecting member 27 is dropped using a dispenser, and is heated and cured. Finally, the LED device 21 is singulated in the singulation process shown in FIG.

In this embodiment, the adhesive 23b is separated and applied for each section where the LED element 16 is attached. However, an adhesive may be applied over the entire top surface of the phosphor sheet 11 if some light loss is allowed. At this time, the bottom of the fillet 23a may be connected to the bottom of the fillet 23a of the adjacent LED element.
(Third embodiment)

  The fillet 23a of the LED device 21 shown in the second embodiment has an upwardly convex shape in FIG. 5, but may have a downwardly convex shape (reverse tapered shape). As an example of this, the third embodiment of the present invention will be described in detail with reference to FIGS.

  The bottom surface of the LED device 31 of this embodiment is equal to the bottom surface of the LED device 10 of the first embodiment shown in FIG. 2 and the bottom surface of the LED device 21 of the second embodiment (not shown). Therefore, a cross-sectional structure of the LED device 31 will be described with reference to FIG. FIG. 7 is a cross-sectional view of the LED device 31 in the present embodiment. The cross-sectional structure of the LED device 31 is substantially equal to the cross section of the LED device 21 of the second embodiment shown in FIG. The difference in cross-sectional structure between the LED device 31 and the LED device 21 is that the LED device 31 includes a dam material 36 at the end of the phosphor sheet 11 and the fillet 33a has a downwardly convex shape. This is that the adhesive layer 33 and the white reflecting member 37 are deformed due to the influence of the shape of the fillet 33a.

  Next, the light emission of the LED device 31 will be described with reference to FIG. The light emitted to the side of the LED element 16 (blue light and wavelength-converted light) is reflected at the interface between the fillet 33a and the white reflecting member 37 and finally emitted above the LED device 31. Furthermore, since the fillet 33a has a downwardly convex shape, the amount of adhesive present on the side of the semiconductor layer 15 is greater than the fillet 23a (see FIG. 5) of the second embodiment. As a result, the blue light emitted from the side portion of the semiconductor layer 15 can be efficiently taken and directed upward.

  Next, a manufacturing method of the LED device 31 will be described with reference to FIG. FIG. 8 is an explanatory diagram of the manufacturing process of the LED device 31. The preparation process shown in FIG. 4A is the same as the preparation process shown in the first embodiment in FIG. 4A and the preparation process shown in the second embodiment shown in FIG. In this embodiment, there is a step of arranging the dam material 36 shown by (a-1) after the preparation step. The dam material 36 may also be a silicone resin, and the dam material 36 is cured when placed on the phosphor sheet 11 by a printing method.

The adhesive application process shown in (b) is substantially the same as the adhesive application process shown in the first and second embodiments of FIGS. 4 (b) and 6 (b), but the fillet 33a is convex upward. Adhesive 33b is applied between the dam members 36 to obtain a shape. In the bonding step shown in (c), the fillet 33a is formed when the LED element 16 is pressed against the phosphor sheet 11. At this time, since the adhesive material 33b is prevented from spreading by the dam material 36, the fillet 33a has an upwardly convex shape. When the adhesive 23b is cured, the LED device 21 is obtained through the white reflecting member filling step shown in (d) and the singulation step shown in (e).
(Fourth embodiment)

  In the first to third embodiments, the protruding electrodes of the LED element 16 are naturally disposed at both ends of the bottom surface. As shown in FIG. 3, this is because the opening of the insulating film 15d in the region occupied by the p-type semiconductor layer 15c and the insulating film 15d formed in the region where the n-type semiconductor layer 15a is exposed from the p-type semiconductor layer 15c. This is because the openings are at different ends of the bottom surface of the LED element 16. However, the opening related to the n-type semiconductor layer and the opening related to the p-type semiconductor layer are not always at the end of the LED element. Therefore, the fourth embodiment of the present invention will be described in detail with reference to FIGS. 9 to 11 as a case where the opening of the insulating film is also present at a place other than the end of the bottom surface of the LED element.

  First, the structure of the LED device 41 will be described with reference to FIGS. FIG. 9 is a cross-sectional view of the LED device 41 in the present embodiment. The phosphor sheet 11 is bonded to the upper surface of the LED element 41 through an adhesive layer 43. Similar to the LED device 31 of the third embodiment shown in FIG. 7, a dam material 36 is provided at the end of the phosphor sheet 11, and the fillet 43a of the adhesive material has a downwardly convex shape. The white reflecting member 47 is filled not only on the side of the fillet 43 a but also around the protruding electrodes 48 and 49 of the LED element 46. There are plating electrodes 53 and 54 (connection electrodes) connected to the protruding electrodes 48 and 49 at the bottom of the white reflecting member 47.

  The LED element 46 includes a semiconductor layer 45 under the sapphire substrate 44, wirings 51 and 52 are provided under the semiconductor layer 45, and the wirings 51 and 52 are connected to the protruding electrodes 48 and 49, respectively. The insulating film is not shown.

  FIG. 10 is a bottom view of the LED device 41 before the white reflecting member 47 is filled. The fillet 43a and the dam material 36 are visible outside the region occupied by the semiconductor layer 45. On the bottom surface of the semiconductor layer 45, there are a U-shaped wiring 51 and a linear wiring 52. At the end of the bottom surface of the semiconductor layer 45, wirings 51 and 52 and protruding electrodes 48 and 49 are connected, respectively. The wiring 51 is connected to the p-type semiconductor layer through an opening of an insulating film (not shown). Similarly, the wiring 52 is connected to the n-type semiconductor layer through an opening of an insulating film (not shown).

  As described above, even if the connection portions (openings of the insulating film) of the p-type semiconductor layer and the n-type semiconductor layer are dispersed on the bottom surface of the LED element 46, the connection portions are connected to each other by using the wirings 51 and 52. Then, the protruding electrodes 48 and 49 connected to the plating electrodes 53 and 54 can be formed at the bottom end portions. At this time, the white reflecting member 47 functions as an interlayer insulating film between the wirings 51 and 52 and the plating electrodes 53 and 54.

  Next, a method for manufacturing the LED device 41 will be described with reference to FIG. FIG. 11 is an explanatory diagram of the manufacturing process of the LED device 41. The preparation process shown in (a) is the preparation process of the first to third embodiments shown in FIGS. 4, 6, and 8 (a) except that the LED element 46 is replaced with the LED element 16 in the first to third embodiments. Is the same. The steps of arranging the dam materials shown in (a-2), (b), and (c), the adhesive application step, and the bonding step are shown in FIGS. 8 (a-1), (b), and (c). It is equal to the process of arranging the dam material of the third embodiment, the adhesive material application process, and the adhesion process. Since the LED element 46 is different from the LED element 16, the member numbers are changed to be an adhesive 43b and a fillet 43a.

  In the white reflecting member filling step shown in (d), the white reflecting member 47 is filled until the periphery of the protruding electrodes 48 and 49 is filled. In this case, the white reflecting member 47 is once filled until the entire protruding electrodes 48 and 49 are filled, the white reflecting member 47 is cured, and then the upper surface of the white reflecting member 47 is ground to expose the upper surfaces of the protruding electrodes 48 and 49. And good.

In the step shown in (d-2), the plating electrodes 53 and 54 are formed by combining photolithography and electrolytic plating. First, a common electrode for plating is formed on the entire upper surface of the white reflecting member 47, and a resist material is applied. A resist material opening is formed in a region where the plating electrodes 53 and 54 are to be formed by photolithography, and a metal layer is grown by electrolytic plating in the opening. Subsequently, the resist material is removed by etching, and finally the excess common electrode for plating is removed using the plating electrodes 53 and 54 as a mask. The plating electrodes 53 and 54 may be formed by sputtering, photolithography and etching. The electrolytic plating method is effective when the thickness of the plating electrodes 53 and 54 is 3 μm or more.

  Finally, the LED device 41 is singulated in the singulation process shown in FIG. The singulation process is equivalent to the singulation process shown in FIG.

10, 21, 31, 41 ... LED device (semiconductor light emitting device),
11 ... phosphor sheet,
13, 23, 33, 43 ... adhesive layer,
13b, 23b, 33b, 43b ... Adhesive 14, 44 ... Sapphire substrate (transparent insulating substrate),
15, 45 ... semiconductor layer,
16, 46 ... LED element (semiconductor light emitting layer),
17, 27, 37, 47 ... white reflective member,
18, 19, 48, 49 ... protruding electrode,
23a, 33a, 43a ... fillet,
36 ... Dam materials,
51, 52 ... wiring,
53, 54 ... plating electrodes (connection electrodes).

Claims (10)

A semiconductor light emitting device having a transparent insulating substrate and a semiconductor layer formed on the lower surface thereof, and a connection electrode for connecting to the mother substrate, and wavelength-converting part of the light emitted from the semiconductor light emitting device In a semiconductor light emitting device,
A white reflective member covering a side portion of the semiconductor light emitting element;
A phosphor sheet disposed on the opposite side of the transparent insulating substrate from the semiconductor layer and covering the transparent insulating substrate and the white reflective member;
An adhesive layer that bonds the phosphor sheet and the transparent insulating substrate;
A semiconductor light-emitting device, wherein the semiconductor light-emitting element has a protruding electrode.   The semiconductor light emitting device according to claim 1, wherein the protruding electrode is the connection electrode.   The semiconductor light-emitting device according to claim 1, wherein the adhesive is attached to a side surface of the semiconductor light-emitting element.   4. The semiconductor light emitting device according to claim 3, wherein the fillet shape of the adhesive material attached to the side surface of the semiconductor light emitting element is an inversely tapered shape. The white reflecting member covers the periphery of the protruding electrode together with the semiconductor light emitting element,
The semiconductor light emitting device according to claim 1, wherein the connection electrode connected to the protruding electrode is at a bottom of the white reflective member. A semiconductor light emitting device having a transparent insulating substrate and a semiconductor layer formed on the lower surface thereof, and a connection electrode for connecting to the mother substrate, and wavelength-converting part of the light emitted from the semiconductor light emitting device In a method for manufacturing a semiconductor light emitting device,
Preparing a phosphor sheet obtained by processing a resin containing a phosphor into a sheet, and a semiconductor light emitting device including a protruding electrode connected to the semiconductor layer;
An adhesive application step of applying an adhesive to the phosphor sheet or the transparent insulating substrate;
An adhesion step of adhering the phosphor sheet and the transparent insulating substrate;
A white reflecting member filling step of filling a side of the semiconductor light emitting element with a white reflecting member containing reflective fine particles;
A method of manufacturing a semiconductor light emitting device, comprising: an individualizing step of cutting the phosphor sheet and the white reflecting member to separate the semiconductor light emitting device.   The method of manufacturing a semiconductor light emitting device according to claim 6, wherein the adhesive is attached to a side surface of the semiconductor light emitting element in the bonding step.   The method of manufacturing a semiconductor light emitting device according to claim 7, wherein a fillet shape of an adhesive material attached to a side surface of the semiconductor light emitting element in the bonding step is an inversely tapered shape.   9. The method of manufacturing a semiconductor light emitting device according to claim 8, wherein a dam material is disposed on the phosphor sheet before the adhesive material applying step.   In the white reflecting member filling step, the white reflecting member is also filled around the protruding electrode together with the side portion of the semiconductor light emitting device, and the connection electrode is formed on the bottom surface of the white reflecting material by electrolytic plating. A method for manufacturing a semiconductor light emitting device according to claim 6.

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