WO2010071131A1 - Light emission apparatus - Google Patents

Light emission apparatus Download PDF

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Publication number
WO2010071131A1
WO2010071131A1 PCT/JP2009/070909 JP2009070909W WO2010071131A1 WO 2010071131 A1 WO2010071131 A1 WO 2010071131A1 JP 2009070909 W JP2009070909 W JP 2009070909W WO 2010071131 A1 WO2010071131 A1 WO 2010071131A1
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WO
WIPO (PCT)
Prior art keywords
substrate
led chip
emitting device
inspection
light
Prior art date
Application number
PCT/JP2009/070909
Other languages
French (fr)
Japanese (ja)
Inventor
崇史 藤野
横谷　良二
Original Assignee
パナソニック電工株式会社
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Publication of WO2010071131A1 publication Critical patent/WO2010071131A1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0266—Marks, test patterns or identification means
    • H05K1/0268—Marks, test patterns or identification means for electrical inspection or testing
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]

Definitions

  • the present invention relates to a light emitting device using a plurality of LED chips.
  • LEDs Light emitting diodes
  • LEDs have the advantage of being smaller, lighter, and lower power consumption than light bulbs and fluorescent lamps, and are widely used as display light sources, display light sources, and the like.
  • a light-emitting device that emits light with a color different from that of the LED chip, including white light, has been developed. Has been.
  • the LED unit is manufactured, the number of manufacturing steps increases as the number of light emitting devices mounted on the wiring board increases.
  • the light distribution lens and the reflecting mirror provided in the LED unit are increased in size. Therefore, a light-emitting device called a multi-chip LED package in which a plurality of LED chips are mounted on a substrate to increase the light output has been developed.
  • a light emitting device of such a multi-chip LED package for example, as shown in FIG. 10A, a plurality of LED chips 2 (see FIG. 10B) are arranged at the center of the upper surface of the substrate 1 having a rectangular shape in plan view. Is mounted, and a light emitting device 10 is provided in which an optical member 14 covering all of the plurality of LED chips 2 is provided on the upper surface of the substrate 1.
  • a plurality of power supply terminals 31 and 32 electrically connected to the LED chip 2 are exposed around the upper surface of the substrate 1.
  • two sets of power supply terminals 31 and 32 are provided so as to be exposed on the substrate 1 (for example, JP-A-2006-310501). .
  • the light emitting device 10 described in Japanese Patent Laid-Open No. 2006-310501 is provided with a pair of power supply terminals 31 and 32 for each of the plurality of LED chips 2, the light emitting device 10 emits light as shown in FIGS. 10C and 10D.
  • the number of joints increases and the number of man-hours increases.
  • the light-emitting device 10 mounted on the wiring board 35 has the thermal expansion of the substrate 1 of the light-emitting device 10 due to the temperature cycle of the temperature rise and fall associated with turning on and off of the light-emitting device 10. And shrinkage are alternately repeated, and a crack or the like may occur in a joint portion made of solder or the like that joins the power supply terminals 31 and 32 of the light emitting device 10 and the pattern wirings 36 and 36 of the wiring board 35.
  • a plurality of LED chips 2 mounted on the substrate 1 and a plurality of LED chips 2 mounted on the substrate 1 are supplied to the pair of power supply terminals 31 and 32 from the outside, thereby connecting a plurality of units connected in series or in parallel. It is also conceivable to configure the light emitting device 10 that turns on the LED chip 2.
  • the light emitting device 10 is selected as a non-defective product or a defective product by checking the electrical properties of the LED chip 2.
  • probe electrodes for inspection are brought into contact with the power supply terminals 31 and 32 of the light emitting device 10, a reverse voltage is applied to the LED chip 2, and a leakage current flowing at that time is measured to select a deteriorated product. It is common to do.
  • the LED chip 2 having a large leakage current can be detected even if a reverse voltage is applied between the pair of power supply terminals 31 and 32. Therefore, there is a problem that defective products are not sorted out.
  • the leakage current of the light emitting device 10 causes the leakage current of the individual LED chips 2.
  • the total leakage current is detected. Therefore, when the number of individual LED chips 2 connected and the variation value of the leakage current are large (for example, about several nA to several ⁇ A), it is difficult to set a value for determining pass as a non-defective product, and defective products cannot be sufficiently selected. There is.
  • the present invention has been made in view of the above reasons, and its purpose is to reduce man-hours when mounting on a wiring board and to improve bonding reliability, and to improve the quality of defective LED chips and defective products.
  • An object of the present invention is to provide a light emitting device that can be easily selected.
  • the light emitting device includes an electrically insulating substrate on which a plurality of LED chips are mounted on an upper surface, a power line formed on the substrate to connect the plurality of LED chips, and power terminals formed at both ends of the power line. And a pair of inspection lines branched from the power supply line at both ends of each LED chip, and an inspection terminal formed at a point away from the LED chip at one end of each inspection line.
  • the number of power supply terminals to be bonded to the power supply line formed on the substrate can be reduced, the number of steps for mounting on the substrate can be reduced and the bonding reliability can be improved.
  • an inspection terminal for individually checking the electrical properties of each LED chip in a form separate from the power supply terminal it is possible to reduce the man-hours when mounting the light emitting device on the substrate, and to improve the bonding reliability. Improvement can be achieved, and each defective LED chip can be individually inspected, and the defect of the LED chip can be detected more reliably.
  • the inspection terminal can be arranged at an appropriate position away from the LED chip by the inspection line provided to branch from the power supply line, thermal expansion and contraction in the vicinity of the LED chip on the substrate 1 are possible. It is possible to reduce the occurrence of cracks due to alternating between and.
  • the power line, the inspection line, and the inspection terminal are formed on the upper surface of the substrate, and an electrically insulating protective film that covers a part of the power line, the inspection line and the inspection terminal is formed on the upper surface of the substrate, It is preferable that the inspection terminal is exposed through a through hole formed in the protective film.
  • the protective film that protects the pattern wiring can reduce exposure of the pattern wiring, thereby suppressing breakage of the LED chip due to static electricity flowing into the LED chip through the pattern wiring. Furthermore, a highly reliable light-emitting device can be provided by suppressing deterioration of the pattern wiring by this protective film.
  • the through hole for exposing the inspection terminal is formed in the protective film, the movement of the probe electrode on the substrate can be restricted and the probe electrode can be prevented from slipping from the inspection terminal.
  • the through hole is formed in a tapered shape so that its cross-sectional area increases as the distance from the substrate increases.
  • This configuration makes it easier to position the probe electrode for inspection.
  • the power line includes a series connection segment that connects two adjacent LED chips connected in series, and one LED chip is mounted on one end of each series connection segment.
  • a pad that is in electrical contact with the electrode on the lower surface of the LED chip is formed, and a land that is bonded to the other electrode of the other LED chip via the wire on the upper surface of the other LED chip is formed.
  • This configuration simplifies the process of mounting the pattern wiring on the substrate and improves the bonding reliability. In addition, it is possible to individually check the electrical properties of each LED chip while reducing the total area of the pattern wiring provided on the substrate.
  • a sealing portion that covers a plurality of LED chips is provided, and this sealing portion covers all of the pads and lands, and part of the power supply line and the inspection line, and is covered with the sealing portion. It is preferable that the power supply line and the inspection line other than the portion are configured to be covered with a protective film. Accordingly, the LED chip can be mounted, the serial connection segment via the wire and the LED chip can be connected, and the power supply line and the inspection line other than the portion covered with the sealing portion can be protected from the outside.
  • FIG. 3 is a plan view illustrating a part of the light emitting device according to the first embodiment.
  • the schematic circuit diagram in the serial connection same as the above is shown.
  • the schematic circuit diagram in the series-parallel connection same as the above is shown.
  • It is a top view of another structure same as the above.
  • It is a schematic sectional drawing of another structure same as the above.
  • the structure of the main part is shown.
  • It is sectional drawing which shows another structure same as the above.
  • 6 which shows another structure same as the above.
  • 6 is a plan view of a light emitting device according to Embodiment 2.
  • FIG. 6 is a schematic cross-sectional view of a light emitting device according to Embodiment 2.
  • FIG. 1 is a plan view of a light emitting device according to Embodiment
  • FIG. 3 It is sectional drawing which shows the light-emitting device of Embodiment 3.
  • the top view of the conventional light-emitting device is shown.
  • the circuit diagram of the conventional light-emitting device is shown.
  • the wiring board of the conventional light-emitting device is shown. Sectional drawing when the conventional light-emitting device is mounted in a wiring board is shown.
  • the light emitting device 10 of the present embodiment is formed on the substrate 1, a flat electrically insulating substrate 1 having a rectangular shape in plan view, a plurality of LED chips 2 mounted in the center of the substrate 1, and the substrate 1.
  • a power line 37 that connects a plurality of LED chips, and power terminals 31 and 32 that are formed at both ends of the power line 37 and supply electricity to the LED chip 2.
  • a concave portion for accommodating a plurality of LED chips 2 is provided on the bottom surface of the top surface of the substrate 1 of the light emitting device, and a convex lens-like optical member 14 having a circular shape in plan view, and in the concave portion of the optical member 14.
  • the sealing portion 15 filled so as to cover the plurality of LED chips 2 and the color conversion member 17 that covers the optical member 14 via the air layer 19 are disposed (see FIG. 3B).
  • the air layer 19 between the optical member 14 and the color conversion member 17 enhances the light extraction efficiency from the light emitting device 10.
  • a pair of inspection lines 38 are formed so as to branch from the power supply line 37 at both ends of each LED chip 2, and at one end of each inspection line 38.
  • the inspection terminal 4 is formed so as to be away from the LED chip 2.
  • an electrically insulating protective film 13 is formed so as to cover a part of the power line 37, the inspection line 38, and the inspection terminal 4.
  • the protective film 13 is formed with a plurality of through holes 16 for exposing the inspection terminals 4 individually.
  • FIG. 1 A part of the light emitting device 10 of the present embodiment is shown in FIG.
  • a plurality of LED chips 2 are mounted on the upper surface of the substrate 1 shown in FIG. 1, power supply terminals 31 and 32 for supplying power to the plurality of LED chips 2, and electrical properties of each LED chip 2.
  • a pair of inspection terminals 4 for individually inspecting are formed.
  • the substrate 1 is formed in a flat plate shape by a thin plate made of, for example, a single layer or a multilayer alumina ceramic.
  • a power line 37 made of a metal thin film (for example, an Au film or a Cu film) and connecting a plurality of LED chips 2 is formed on the upper surface of the substrate 1.
  • the power supply line 37 on the substrate 1 is provided with a pair of power supply terminals 31, 32, 15 LED chips 2, and 14 serial connection segments 33 that connect the LED chips 2 in series.
  • the pair of power supply terminals 31 and 32 are provided to supply electricity to the plurality of LED chips 2.
  • One power supply terminal 31 is provided with a land 6 to which a metal wire 7 made of, for example, a gold wire or an aluminum wire is bonded, and an inspection terminal 4 used for checking the electrical properties of the LED chip 2.
  • the other power supply terminal 32 includes a pad 5 on which the LED chip 2 is mounted and an inspection terminal 4 used for checking the electrical properties of the LED chip 2.
  • the series connection segments 33 are connected in series between the adjacent LED chips 2, and a plurality of series connection segments 33 are provided on the substrate 1 as desired.
  • the serial connection segment 33 has a pad 5 on one end of which the LED chip 2 is mounted and which is in electrical contact with the electrode on the lower surface of the LED chip 2.
  • the land 6 is bonded to the electrode on the upper surface of the LED chip 2 via the metal wire 7.
  • An inspection line 38 extending one by one for each series connection segment 33 connects the inspection terminal 4 used for inspection of the electrical properties of the LED chip 2 mounted on the pad 5 to the series connection segment 33.
  • the arrangement of the pad 5, the land 6 and the inspection terminal 4 of the serial connection segment 33 is appropriately determined according to the arrangement of the LED chip 2 on the substrate 1.
  • two wires are extended from the pad 5 of the serial connection segment 33, and a land 6 bonded to the LED chip 2 via a metal wire 7 is provided at the tip of one wire, and at the tip of the other wire.
  • the inspection terminal 4 is provided at a point away from the center of the substrate 1. Further, the inspection terminal 4 is provided at the tip of the wiring extending from the pad 5 of the series connection segment 33, and another wiring is provided in a form branched from the wiring between the pad 5 and the inspection terminal 4, and the wiring A land 6 can also be formed at the tip of each of them. Furthermore, the inspection terminal 4 can be arranged at the tip of the wiring extending from the pad 5 of the serial connection segment 33, and a part of the wiring width between the pad 5 and the inspection terminal 4 can be widened to be the land 6.
  • the LED chip 2 used in the light emitting device 10 of this embodiment has a pair of electrodes formed on both sides in the thickness direction, and one electrode (for example, a cathode) is made of AuSn or Ag paste on the pad 5.
  • the junction 8 can be used for electrical connection by die-bonding, and the other electrode (for example, anode) can be electrically connected to the land 6 via the metal wire 7.
  • the LED chip 2 can use various compound semiconductors depending on the desired light color radiated from the light emitting device 10, but when used for illumination, the fluorescent light contained in the color conversion member 17 to obtain white light.
  • a high-power LED chip 2 using a GaN-based compound semiconductor that can efficiently excite the body is preferable.
  • the GaN-based compound semiconductor is formed on an insulating substrate such as a sapphire substrate or a spinel substrate, or on a conductive substrate such as an SiC substrate or a GaN substrate by MOCVD.
  • a conductive substrate is used as the crystal growth substrate of the LED chip 2
  • the conductive substrate and the pad 5 are bonded using the bonding portion 8 made of Ag paste, AuSn, or the like as described above.
  • the LED chip 2 is flip-chip mounted, or the insulating substrate is fixed to the pad 5 with an epoxy resin or the like. In either case, the LED chip 2 is preferably fixed at the joint 8 having high heat dissipation.
  • a pair of electrodes provided on the front surface side of the LED chip 2 are bonded to the land 6 by a metal wire 7 or the like to be electrically connected. can do.
  • the LED chip 2 can be formed by bonding a support substrate such as Si after crystal growth and then peeling off the crystal growth substrate such as a sapphire substrate, and an LED using a conductive substrate as the crystal growth substrate. It can be handled in the same manner as the chip 2.
  • the pads 5 and lands 6 such as the series connection segments 33 are provided densely at the center of the substrate 1, and the inspection terminals 4 are
  • the substrate 1 is preferably provided so as to be away from the center.
  • the inspection terminals 4 arranged on the periphery of the substrate 1 are arranged in a zigzag parallel to one side of the flat substrate 1.
  • the pair of power supply terminals 31 and 32 are arranged at one corner of the four corners of the flat substrate 1 so as not to interfere with the optical member 14 and the color conversion member 17 covering the plurality of LED chips 2. It is preferred that
  • FIG. 2A a schematic circuit diagram of the light emitting device 10 of the present embodiment is shown in FIG. 2A.
  • a plurality of LED chips 2 are connected in series, and a pair of power supply terminals 31 and 32 for supplying electricity to light the LED chips 2 are provided at both ends of the LED chips 2. It is connected.
  • a direct connection segment 33 for connecting in series is provided between the LED chips 2, and the series connection segment 33 has an inspection terminal 4 used for inspection of the electrical properties of each LED chip 2 at one end.
  • Each line is provided with a single branch.
  • the circuit of FIG. 2A in which a plurality of LED chips 2 are connected in series may be one, and may be plural if the junction reliability is not lowered by the number of junctions between the power supply line 37 and the power supply terminals 31 and 32. Furthermore, a circuit in which a plurality of LED chips 2 connected in series as shown in FIG. 2B are connected in parallel may be adopted. Even in this case, when a forward voltage is applied between the pair of power supply terminals 31 and 32, a plurality of LED chips 2 are lit simultaneously through the current flowing through the series connection segments 33.
  • the inspection terminals 4 provided separately from the pair of power supply terminals 31 and 32 can individually inspect the electrical properties of the LED chips 2.
  • FIG. 5 shows a cross-sectional view of the light emitting device 10 in a state where the optical member 14, the sealing portion 15, and the protective film 13 are provided on the substrate 1 shown in FIG.
  • the LED chip 2 is mounted in the center (mounting area) on the substrate 1, and a protective film 13 (for example, a glass film) is formed on the substrate 1 on both sides of the mounting area. Further, on the mounting area, a convex lens-shaped optical member 14 that condenses the light from the LED chip 2 is provided, and the LED chip 2 is sealed in a recess provided on the bottom surface of the cover of the optical member 14. The sealing part 15 is filled and arranged.
  • a protective film 13 for example, a glass film
  • the protective film 13 formed on the substrate 1 will be described.
  • the power supply terminals 31 and 32 disposed at one corner of the four corners of the flat substrate 1, the inspection terminal 4 formed away from the center of the substrate 1, and the mounting area are excluded.
  • a protective film 13 is formed (see FIGS. 1 and 3A).
  • a through hole 16 penetrating in the thickness direction of the protective film 13 is formed on the power supply terminals 31, 32 and the inspection terminal 4 that is electrically connected to each LED chip 2.
  • a plurality of LED chips 2, pads 5, and lands 6 that are turned on when current is supplied from a pair of power supply terminals 31 and 32 are arranged.
  • the possibility of damaging the LED chip 2 due to the flow of static electricity can be reduced (See FIG. 3A).
  • an inorganic material such as glass or ceramic as the material of the protective film 13, it is possible to suppress deterioration of the power supply line 37 and the inspection line 38 due to moisture, oxidation, sulfurization, etc.
  • a high light emitting device 10 can be obtained.
  • each LED chip 2 is individually inspected by inserting a probe electrode 20 for inspection into a through hole 16 penetrating the protective film 13 and making contact with the inspection terminal 4 on the substrate 1. be able to.
  • a probe electrode 20 for inspection into a through hole 16 penetrating the protective film 13 and making contact with the inspection terminal 4 on the substrate 1.
  • the optical member 14 is formed in a convex lens shape having a circular shape in plan view in order to protect the LED chip 2 from the outside and condense light from the LED chip 2.
  • a material of the optical member 14 for example, an organic material such as a translucent silicone resin, an acrylic resin, or an epoxy resin, or an inorganic material such as glass can be used.
  • a concave portion is suitably provided on the bottom surface of the optical member 14 formed in a convex lens shape, and the concave portion can be filled with a translucent resin as the sealing portion 15. In this case, the mounting area in which the LED chip 2, the pad 5, and the land 6 on the substrate 1 are disposed is accommodated in the recess of the optical member 14.
  • the sealing portion 15 has a refractive index of the cover in order to increase the light extraction efficiency from the LED chip 2. It is preferable to use a translucent material having the above refractive index. Furthermore, when the sealing part 15 is made of a gel-like resin, disconnection of the metal wire 7 can be prevented from thermal stress caused by heat generation or cooling of the LED chip 2 in the recess of the optical member 14. As a material for such a sealing portion 15, for example, gel-like silicone is preferably exemplified.
  • uncured gel-like silicone which is a material for the sealing portion 15 is filled in the recess provided on the bottom surface of the optical member 14, and the substrate is placed on the optical member 14. With the 1 turned over, the optical member 14 is positioned and fitted to the substrate 1.
  • the light emitting device 10 can be formed by curing the gel-like silicone.
  • FIG. 4 the optical member 14 and the color conversion member 17 on the optical member 14 are shown from the bottom surface side (engagement surface with the substrate 1). There is a recess in the center of the bottom surface of the optical member 14 where the sealing portion 15 is suitably formed.
  • the bottom surface of the optical member 14 is provided with a pair of first stepped portions 14d and 14d and a second stepped portion 14f deeper than the paired first stepped portions 14d and 14d, and projects inward from the first stepped portion 14d. Projections 14e, 14e are formed.
  • the first step portions 14 d and 14 d of the optical member 14 are fitted with the protective film 13 on the substrate 1, and the protrusions 14 e and 14 e of the optical member 14 are formed by notching the notches 1 e and 1 e provided at the center of the substrate 1. It can be fitted and locked.
  • the second stepped portion 14f is provided with a groove portion 14b that can be fitted with the protective film 13 on the substrate 1.
  • the color conversion member 17 covers the optical member 14 and can radiate by converting at least a part of the wavelength from the LED chip 2.
  • the color conversion member 17 is formed in a circular shape whose plan view is larger than that of the optical member 14, and part of the color conversion member 17 protrudes from the end of the substrate 1 (see FIG. 3A).
  • the cross-sectional view of the color conversion member 17 has a convex shape and a concave portion that can accommodate the optical member 14 therein (see FIG. 3B).
  • a translucent material for example, silicone resin
  • a phosphor for example, from the LED chip 2 that converts the wavelength emitted from the LED chip 2 into light having a longer wavelength.
  • the phosphor that absorbs blue light and emits a yellow wavelength can be included.
  • the LED chip 2 emits blue light, and the blue light from the LED chip 2 and the yellow light emitted from the phosphor are emitted through the light exit surface of the color conversion member 17.
  • White light can be obtained from the light emitting device 10.
  • the translucent material of the color conversion member 17 is not limited to a silicone resin.
  • a hybrid material or the like may be used.
  • phosphors contained in the color conversion member 17 for example, when emitting blue light from the LED chip 2, phosphors capable of emitting green and red as well as phosphors emitting yellow light. Can be used to obtain white light from the light emitting device 10.
  • the phosphor can be variously selected according to the wavelength (for example, ultraviolet rays) emitted from the LED chip 2 such as a phosphor capable of emitting blue, green, red and white, and the target color to be obtained.
  • Such a portion overlapping the substrate 1 in the center of the lower surface of the color conversion member 17 can be fixed with an adhesive (for example, epoxy resin).
  • the substrate 1 used in the light emitting device 10 of the present embodiment is fixed to be fixed to a housing of a lighting fixture or the like at a pair of diagonal corners among four corners having a rectangular shape in plan view.
  • a screw fixing notch 1f for a screw (not shown) is suitably formed.
  • notches 1e are suitably formed on both side surfaces in the longitudinal direction of the substrate 1, and the notches 1e project from the first step portions 14d and 14d of the optical member 14 so as to approach each other.
  • the protrusions 14e and 14e can be engaged.
  • the pair of power supply terminals 31 and 32 are not necessarily provided on the upper surface of the substrate 1 on which the LED chip 2 is arranged as illustrated in the cross-sectional view of the light emitting device 10 in FIG.
  • the substrate 1 is formed of a ceramic substrate
  • the same pattern wiring as described above is formed on the upper surface of the ceramic substrate without forming the pair of power supply terminals 31 and 32.
  • the LED chip 2 is die-bonded to the pad 5 of the series connection segment 33 by, for example, a bonding portion 8 made of gold tin, and electrically connected to one electrode (not shown) of the LED chip 2.
  • the other electrode (not shown) of the LED chip 2 and the land 6 connected to the other wiring 34 are bonded to each other by a metal wire 7.
  • vias 9 and 9 are embedded in the thickness direction of the substrate 1, and the wiring 34 formed on the upper surface of the substrate 1 and the wiring formed on the lower surface of the substrate 1 are connected via the vias 9 and 9.
  • the wiring formed on the lower surface of the substrate 1 functions as the power supply terminals 31 and 32.
  • the substrate 1 is not limited to a ceramic substrate, and a resin substrate (for example, a highly insulating glass epoxy resin substrate or a heat-resistant liquid crystal polymer substrate) on which pattern wiring can be formed on the surface can also be used.
  • the pattern wiring for electrically connecting the LED chip 2 can be formed by laminating a metal thin film on a resin substrate and then etching to form a desired pattern.
  • the substrate 1 efficiently releases the heat generated in the LED chip 2 to the outside.
  • an AlN film is formed on a metal substrate 11 made of an aluminum substrate.
  • a metal base substrate on which pattern wirings are formed through the insulating layer 12 may be used.
  • the pattern wiring is provided on the insulating layer 12 and functions as a pair of power supply terminals 31 and 32 and a series connection segment 33.
  • the LED chip 2 is placed by, for example, a joint 8 made of solder, and is joined to one electrode of the LED chip 2.
  • the other electrode of the LED chip 2 is bonded to the land 6 formed at the tip of the wiring extending from the one power supply terminal 31 by the metal wire 7.
  • the pattern wiring formed on the insulating layer 12 can be formed in a pattern similar to that shown in FIG. 1 in plan view, and a power supply for supplying power to the plurality of LED chips 2 on the substrate 1.
  • an inspection terminal 4 for individually checking the electrical properties of each LED chip 2 is provided (not shown).
  • Embodiment 2 The basic configuration of the light emitting device 10 of the present embodiment is substantially the same as that of the first embodiment, and the flow of excess adhesive that occurs during the manufacture of the light emitting device 10 on the protective film 13 that protects the pattern wiring formed on the substrate 1. The difference is that a dam portion 18 for damming is provided.
  • symbol is attached
  • the protruding adhesive flows to the short side of the rectangular substrate 1 from the edge of the color conversion member 17 having a circular shape in plan view, and is provided to expose the power supply terminals 31 and 32 and the inspection terminal 4.
  • the through hole 16 of the protective film 13 may be blocked.
  • the uncured resin that protrudes may block the through hole 16 of the protective film 13 provided to expose the power supply terminals 31 and 32 and the inspection terminal 4.
  • the dam portion 18 can be provided so as to protrude on the protective film 13 so that an excessive amount of an adhesive or the like does not protrude onto the through hole 16 provided in the protective film 13.
  • the dam part 18 removes an excess of an adhesive or the like that tends to flow from the edge of the color conversion member 17 to the short side of the rectangular substrate 1 along the edge of the color conversion member 17 having a circular shape in plan view. It is configured as a dam.
  • Such a dam portion 18 can be formed by providing a glass film again on the protective film 13 when the protective film 13 is formed of glass.
  • the dam portion 18 made of ceramic can be integrally formed with the substrate 1.
  • the dam portion 18 formed on the substrate 1 not only protects the surplus portion of the adhesive or the like from protruding over the through hole 16 penetrating the protective film 13 but also the optical member 14 and the color conversion member 17. It is also possible to have an effect that the positioning can be easily performed.
  • the basic configuration of the light emitting device 10 of the present embodiment is substantially the same as that of the first embodiment, except that the shape of the through hole 16 penetrating the protective film 13 is changed.
  • symbol is attached
  • the through hole 16 provided in the substrate 1 in the light emitting device 10 of the present embodiment is formed in a tapered shape, and the sectional area of the through hole 16 is the substrate 1. It is formed so that it becomes large as it leaves.
  • the through-hole 16 in the light emitting device 10 of the present embodiment has such a tapered shape, so that the probe electrode 20 for inspection can be easily positioned.

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Abstract

Provided is a light emission apparatus which allows for reduction in the number of steps when performing secondary mounting on a circuit board and for improvement in bonding reliability, and which allows for easy checking of a plurality of LED chips for good and bad LED chips.  The light emission apparatus (10) includes a board (1) and a plurality of LED chips (2) mounted on the upper surface of the board (1).  On the board (1) are arranged a pair of power terminals (31, 32) for supplying power to the LED chips (2), and check terminals (4) by which the electric properties of each LED chip (2) can be checked.

Description

発光装置Light emitting device
　本発明は、複数個のＬＥＤチップを用いた発光装置に関するものである。
The present invention relates to a light emitting device using a plurality of LED chips.
　発光ダイオード（ＬＥＤ）は、電球や蛍光灯などと比較して小型、軽量、低消費電力であるという長所を持ち、表示用光源、ディスプレイ用光源などとして広く用いられている。近年では、青色の光あるいは紫外線を放射するＧａＮ系化合物半導体を用いたＬＥＤチップと、ＬＥＤチップから放射された光によって励起されＬＥＤチップが発光する波長よりも長波長の光を放射する蛍光体とを組み合わせることにより、白色を含め、ＬＥＤチップの発光色とは異なる色合いの光を発光する発光装置の開発も行われており、小型電球の代替や携帯電話の液晶パネルのバックライト光源などとして利用されている。 Light emitting diodes (LEDs) have the advantage of being smaller, lighter, and lower power consumption than light bulbs and fluorescent lamps, and are widely used as display light sources, display light sources, and the like. In recent years, an LED chip using a GaN-based compound semiconductor that emits blue light or ultraviolet light, and a phosphor that emits light having a wavelength longer than the wavelength emitted by the LED chip when excited by the light emitted from the LED chip; As a result, a light-emitting device that emits light with a color different from that of the LED chip, including white light, has been developed. Has been.
　特に、ＬＥＤチップの発光効率が向上するのに伴い、この種の発光装置を照明用途に応用する研究開発が盛んになってきている。この種の発光装置を一般照明のように比較的大きな光出力を必要とする用途に用いる場合、１個の発光装置だけでは所望の光出力を得ることが難しい。そのため、１つの配線基板に複数個の発光装置を実装してＬＥＤユニットを構成し、ＬＥＤユニット全体で所望の光出力を確保するようにしているのが一般的である。 In particular, as the luminous efficiency of LED chips is improved, research and development for applying this type of light emitting device to lighting applications has become active. When this type of light emitting device is used for an application that requires a relatively large light output, such as general illumination, it is difficult to obtain a desired light output with only one light emitting device. Therefore, it is general that a plurality of light emitting devices are mounted on one wiring board to constitute an LED unit, and a desired light output is ensured by the entire LED unit.
　しかしながら、ＬＥＤユニットを製造するため、配線基板に実装する発光装置の数が増加するのに伴い、製造の工数が増える。また、発光装置から出射される光をスポット状に絞りたい場合、ＬＥＤユニットに設けられる配光レンズや反射鏡が大型化してしまう。そこで、複数個のＬＥＤチップを基板に実装し、光出力を大きくしたマルチチップＬＥＤパッケージと呼ばれる発光装置も開発されている。 However, since the LED unit is manufactured, the number of manufacturing steps increases as the number of light emitting devices mounted on the wiring board increases. In addition, when it is desired to narrow the light emitted from the light emitting device in a spot shape, the light distribution lens and the reflecting mirror provided in the LED unit are increased in size. Therefore, a light-emitting device called a multi-chip LED package in which a plurality of LED chips are mounted on a substrate to increase the light output has been developed.
　このようなマルチチップＬＥＤパッケージの発光装置としては、例えば、図１０Ａに示すように、平面視形状が矩形状である基板１の上面の中央に、複数個のＬＥＤチップ２（図１０Ｂを参照）が実装され、基板１の上面にこれら複数個のＬＥＤチップ２全てを覆う光学部材１４が設けられた発光装置１０が提供されている。ここで、基板１の上面の周囲には、ＬＥＤチップ２と電気的に接続された複数個の電源端子３１，３２が露出している。図１０Ｂの回路図で示すように、各ＬＥＤチップ２に対して、基板１上で露出する形で２組の電源端子３１，３２が設けられている（例えば、特開２００６－３１０５０１号公報）。 As a light emitting device of such a multi-chip LED package, for example, as shown in FIG. 10A, a plurality of LED chips 2 (see FIG. 10B) are arranged at the center of the upper surface of the substrate 1 having a rectangular shape in plan view. Is mounted, and a light emitting device 10 is provided in which an optical member 14 covering all of the plurality of LED chips 2 is provided on the upper surface of the substrate 1. Here, a plurality of power supply terminals 31 and 32 electrically connected to the LED chip 2 are exposed around the upper surface of the substrate 1. As shown in the circuit diagram of FIG. 10B, for each LED chip 2, two sets of power supply terminals 31 and 32 are provided so as to be exposed on the substrate 1 (for example, JP-A-2006-310501). .
　しかしながら、特開２００６－３１０５０１号公報に記載された発光装置１０は、複数個のＬＥＤチップ２ごとに一対の電源端子３１，３２が設けられているため、図１０Ｃ，図１０Ｄに示すように発光装置１０の電源端子３１，３２と配線基板３５のパターン配線３６，３６とを半田などで接合する実装を行う際、接合箇所が多くなり工数が増加することになる。 However, since the light emitting device 10 described in Japanese Patent Laid-Open No. 2006-310501 is provided with a pair of power supply terminals 31 and 32 for each of the plurality of LED chips 2, the light emitting device 10 emits light as shown in FIGS. 10C and 10D. When mounting is performed by joining the power supply terminals 31 and 32 of the apparatus 10 and the pattern wirings 36 and 36 of the wiring board 35 with solder or the like, the number of joints increases and the number of man-hours increases.
　また、図１０Ｃ，図１０Ｄに示すように配線基板３５に実装された発光装置１０は、発光装置１０の点灯と消灯に伴う昇温と降温の温度サイクルにより、発光装置１０の基板１の熱膨張と収縮とが交互に繰り返され、発光装置１０の電源端子３１，３２と配線基板３５のパターン配線３６，３６とを接合している半田などからなる接合部にクラックなどが生じる場合がある。 10C and 10D, the light-emitting device 10 mounted on the wiring board 35 has the thermal expansion of the substrate 1 of the light-emitting device 10 due to the temperature cycle of the temperature rise and fall associated with turning on and off of the light-emitting device 10. And shrinkage are alternately repeated, and a crack or the like may occur in a joint portion made of solder or the like that joins the power supply terminals 31 and 32 of the light emitting device 10 and the pattern wirings 36 and 36 of the wiring board 35.
　そのため、基板１と、基板１上に実装された複数個のＬＥＤチップ２とを備え、外部から電流を一対の電源端子３１，３２に供給することで、直列接続或いは並列接続させた複数個のＬＥＤチップ２を点灯させる発光装置１０を構成することも考えられる。 Therefore, a plurality of LED chips 2 mounted on the substrate 1 and a plurality of LED chips 2 mounted on the substrate 1 are supplied to the pair of power supply terminals 31 and 32 from the outside, thereby connecting a plurality of units connected in series or in parallel. It is also conceivable to configure the light emitting device 10 that turns on the LED chip 2.
　ところで、発光装置１０に対しては、ＬＥＤチップ２の電気的性質が点検されることで、良品か不良品に選別される。この点検方法としては、発光装置１０の電源端子３１，３２に点検用のプローブ電極を接触させ、ＬＥＤチップ２に逆電圧を印加して、その際に流れる漏れ電流を測定して劣化品を選別するのが一般的である。 By the way, the light emitting device 10 is selected as a non-defective product or a defective product by checking the electrical properties of the LED chip 2. As an inspection method, probe electrodes for inspection are brought into contact with the power supply terminals 31 and 32 of the light emitting device 10, a reverse voltage is applied to the LED chip 2, and a leakage current flowing at that time is measured to select a deteriorated product. It is common to do.
　しかしながら、複数個のＬＥＤチップ２が直列接続された発光装置１０の点検において、一対の電源端子３１，３２間に逆電圧を印加しても、漏れ電流の大きいＬＥＤチップ２を検出することができず、不良品が選別されないという問題がある。 However, in the inspection of the light emitting device 10 in which a plurality of LED chips 2 are connected in series, the LED chip 2 having a large leakage current can be detected even if a reverse voltage is applied between the pair of power supply terminals 31 and 32. Therefore, there is a problem that defective products are not sorted out.
　また、複数個のＬＥＤチップ２が並列接続された発光装置１０の点検においては、一対の電源端子３１，３２間に逆電圧を印加すると、発光装置１０の漏れ電流は、個々のＬＥＤチップ２の漏れ電流の合計が検出される。そのため、個々のＬＥＤチップ２の接続数や漏れ電流のバラツキ値が大きい場合（例えば、数ｎＡ～数μＡ程度）、良品として合格を判定する値の設定が難しく不良品を十分に選別できないという問題がある。 In the inspection of the light emitting device 10 in which the plurality of LED chips 2 are connected in parallel, when a reverse voltage is applied between the pair of power supply terminals 31 and 32, the leakage current of the light emitting device 10 causes the leakage current of the individual LED chips 2. The total leakage current is detected. Therefore, when the number of individual LED chips 2 connected and the variation value of the leakage current are large (for example, about several nA to several μA), it is difficult to set a value for determining pass as a non-defective product, and defective products cannot be sufficiently selected. There is.
　本発明は上記事由に鑑みて為されたものであり、その目的は、配線基板に実装する際の工数の低減および接合信頼性を向上でき、且つ、複数個のＬＥＤチップの良品、不良品の選別が容易な発光装置を提供することにある。
The present invention has been made in view of the above reasons, and its purpose is to reduce man-hours when mounting on a wiring board and to improve bonding reliability, and to improve the quality of defective LED chips and defective products. An object of the present invention is to provide a light emitting device that can be easily selected.
　本発明における発光装置は、複数のＬＥＤチップを上面に搭載する電気絶縁性の基板と、基板に形成されて複数のＬＥＤチップを接続する電源ラインと、電源ラインの両端に形成された電源端子とを備え、各ＬＥＤチップの両端で電源ラインから分岐する一対の点検ラインを有し、各点検ラインの一端でＬＥＤチップから離れた点に形成された点検端子を備えたことを特徴とする。 The light emitting device according to the present invention includes an electrically insulating substrate on which a plurality of LED chips are mounted on an upper surface, a power line formed on the substrate to connect the plurality of LED chips, and power terminals formed at both ends of the power line. And a pair of inspection lines branched from the power supply line at both ends of each LED chip, and an inspection terminal formed at a point away from the LED chip at one end of each inspection line.
　この構成によれば、基板に形成される電源ラインと接合する電源端子の数を少なくできるので、基板に実装する際の工程数を低減することができると共に、接合信頼性を向上できる。さらに、電源端子とは分離する形で、各ＬＥＤチップの電気的性質を個別に点検するための点検端子を設けたことで、発光装置を基板へ実装する際の工数の低減、接合信頼性の向上を図り、不良な各ＬＥＤチップを個別に検査することを可能にし、ＬＥＤチップの不良をより確実に検出することができる。さらに、電源ラインから分岐するように設けられた点検ラインによって、ＬＥＤチップから離れた適切な位置に点検端子を配置させることを可能にするので、基板１上のＬＥＤチップ近傍において、熱膨張と収縮とが交互に繰り返されることによるクラックの発生を低減することができる。 According to this configuration, since the number of power supply terminals to be bonded to the power supply line formed on the substrate can be reduced, the number of steps for mounting on the substrate can be reduced and the bonding reliability can be improved. In addition, by providing an inspection terminal for individually checking the electrical properties of each LED chip in a form separate from the power supply terminal, it is possible to reduce the man-hours when mounting the light emitting device on the substrate, and to improve the bonding reliability. Improvement can be achieved, and each defective LED chip can be individually inspected, and the defect of the LED chip can be detected more reliably. Further, since the inspection terminal can be arranged at an appropriate position away from the LED chip by the inspection line provided to branch from the power supply line, thermal expansion and contraction in the vicinity of the LED chip on the substrate 1 are possible. It is possible to reduce the occurrence of cracks due to alternating between and.
　この発光装置において、電源ライン、点検ライン、及び点検端子が、基板の上面に形成され、電源ラインの一部、点検ライン及び点検端子を覆う電気絶縁性の保護膜が基板の上面に形成され、保護膜に形成された貫通孔を介して、点検端子が露出するように構成されることが好ましい。 In this light emitting device, the power line, the inspection line, and the inspection terminal are formed on the upper surface of the substrate, and an electrically insulating protective film that covers a part of the power line, the inspection line and the inspection terminal is formed on the upper surface of the substrate, It is preferable that the inspection terminal is exposed through a through hole formed in the protective film.
　この構成によれば、パターン配線を保護する保護膜が、パターン配線の露出を減らすことで、静電気がパターン配線を通してＬＥＤチップに流れ込むことによるＬＥＤチップの破損を抑制できる。さらに、この保護膜によりパターン配線の劣化を抑制することで、信頼性の高い発光装置を提供できる。また、保護膜には点検端子を露出させる貫通孔が形成されていることにより、基板上でのプローブ電極の移動を規制し点検端子上からプローブ電極が滑ることを抑制することができる。 According to this configuration, the protective film that protects the pattern wiring can reduce exposure of the pattern wiring, thereby suppressing breakage of the LED chip due to static electricity flowing into the LED chip through the pattern wiring. Furthermore, a highly reliable light-emitting device can be provided by suppressing deterioration of the pattern wiring by this protective film. In addition, since the through hole for exposing the inspection terminal is formed in the protective film, the movement of the probe electrode on the substrate can be restricted and the probe electrode can be prevented from slipping from the inspection terminal.
　本発明の発光装置において、貫通孔はテーパ状に形成されてその断面積が基板から離れるにつれて大きくなるように構成されることが好ましい。 In the light emitting device of the present invention, it is preferable that the through hole is formed in a tapered shape so that its cross-sectional area increases as the distance from the substrate increases.
　この構成により、点検用のプローブ電極の位置決めがより容易となる。 This configuration makes it easier to position the probe electrode for inspection.
　本発明の発光装置において、電源ラインは、直列接続される隣り合う２つのＬＥＤチップ間を接続する直列接続セグメントを含み、各直列接続セグメントの一端に、一方のＬＥＤチップを搭載してこのＬＥＤチップの下面の電極に電気接触するパッドが形成され、各直列セグメントの他端に他方のＬＥＤチップの上面の電極とワイヤを介してボンディングされるランドが形成され、各直列接続セグメントから上記の点検ラインが一本のみ分岐するように構成されることが好ましい。 In the light emitting device of the present invention, the power line includes a series connection segment that connects two adjacent LED chips connected in series, and one LED chip is mounted on one end of each series connection segment. A pad that is in electrical contact with the electrode on the lower surface of the LED chip is formed, and a land that is bonded to the other electrode of the other LED chip via the wire on the upper surface of the other LED chip is formed. Is preferably configured to branch only one.
　この構成により、基板にパターン配線を実装する工程を簡略化し、接合信頼性を向上することができる。また、基板に設けられるパターン配線の総面積を低減しつつ、各ＬＥＤチップの電気的性質を個別に点検することを可能にする。 This configuration simplifies the process of mounting the pattern wiring on the substrate and improves the bonding reliability. In addition, it is possible to individually check the electrical properties of each LED chip while reducing the total area of the pattern wiring provided on the substrate.
　本発明の発光装置において、複数のＬＥＤチップを覆う封止部が設けられ、この封止部がパッド及びランドの全てと、電源ラインと点検ラインの一部を覆い、封止部で覆われた部分以外の電源ラインと点検ラインが保護膜で覆われるように構成されることが好ましい。これにより、ＬＥＤチップの搭載と、ワイヤを介した直列接続セグメントとＬＥＤチップとの接続が行えるとともに、封止部で覆われた部分以外の電源ラインや点検ラインを外部から保護することができる。
In the light emitting device of the present invention, a sealing portion that covers a plurality of LED chips is provided, and this sealing portion covers all of the pads and lands, and part of the power supply line and the inspection line, and is covered with the sealing portion. It is preferable that the power supply line and the inspection line other than the portion are configured to be covered with a protective film. Accordingly, the LED chip can be mounted, the serial connection segment via the wire and the LED chip can be connected, and the power supply line and the inspection line other than the portion covered with the sealing portion can be protected from the outside.
実施形態１の発光装置の一部を示す平面図である。FIG. 3 is a plan view illustrating a part of the light emitting device according to the first embodiment. 同上の直列接続における概略回路図を示す。The schematic circuit diagram in the serial connection same as the above is shown. 同上の直並列接続における概略回路図を示す。The schematic circuit diagram in the series-parallel connection same as the above is shown. 同上の別の構成の平面図である。It is a top view of another structure same as the above. 同上の別の構成の略断面図である。It is a schematic sectional drawing of another structure same as the above. 同上の要部の構成を示す。The structure of the main part is shown. 同上の別の構成を示す断面図である。It is sectional drawing which shows another structure same as the above. 同上の別の構成を示す断面図である。It is sectional drawing which shows another structure same as the above. 同上の別の構成を示す断面図である。It is sectional drawing which shows another structure same as the above. 実施形態２の発光装置の平面図である。6 is a plan view of a light emitting device according to Embodiment 2. FIG. 実施形態２の発光装置の略断面図である。6 is a schematic cross-sectional view of a light emitting device according to Embodiment 2. FIG. 実施形態３の発光装置を示す断面図である。It is sectional drawing which shows the light-emitting device of Embodiment 3. 従来の発光装置の平面図を示す。The top view of the conventional light-emitting device is shown. 従来の発光装置の回路図を示す。The circuit diagram of the conventional light-emitting device is shown. 従来の発光装置の配線基板を示す。The wiring board of the conventional light-emitting device is shown. 従来の発光装置を配線基板に実装したときの断面図を示す。Sectional drawing when the conventional light-emitting device is mounted in a wiring board is shown.
　（実施形態１）
　以下、本実施形態の発光装置について図１～図７を参照して説明する。 (Embodiment 1)
Hereinafter, the light-emitting device of this embodiment will be described with reference to FIGS.
　本実施形態の発光装置１０は、平面視形状が長方形状である平板状の電気絶縁性の基板１と、基板１の中央に実装された複数個のＬＥＤチップ２と、基板１上に形成されるパターン配線の一部であり、複数個のＬＥＤチップを接続する電源ライン３７と、電源ライン３７の両端に形成されてＬＥＤチップ２に電気を供給する電源端子３１，３２を備えている。さらに、この発光装置の基板１の上面には、複数個のＬＥＤチップ２を収めるための凹部が底面に設けられて平面視形状が円形の凸レンズ状の光学部材１４と、光学部材１４の凹部内で複数個のＬＥＤチップ２を覆うように充填された封止部１５と、光学部材１４を空気層１９を介して覆う色変換部材１７が配置されている（図３Ｂを参照）。光学部材１４と色変換部材１７との間の空気層１９は、発光装置１０からの光取出効率を高めている。さらに、この発光装置の基板１上のパターン配線の一部として、各ＬＥＤチップ２の両端で電源ライン３７から分岐する形で一対の点検ライン３８が形成されて、それぞれの点検ライン３８の一端にはＬＥＤチップ２から離れるようにして点検端子４が形成されている。さらに、基板１の上面の両側には、電源ライン３７の一部と、点検ライン３８、点検端子４を覆うようにして、電気絶縁性の保護膜１３がそれぞれ形成される。この保護膜１３には、各点検端子４を個別に露出させる複数個の貫通孔１６が形成されている。 The light emitting device 10 of the present embodiment is formed on the substrate 1, a flat electrically insulating substrate 1 having a rectangular shape in plan view, a plurality of LED chips 2 mounted in the center of the substrate 1, and the substrate 1. A power line 37 that connects a plurality of LED chips, and power terminals 31 and 32 that are formed at both ends of the power line 37 and supply electricity to the LED chip 2. Further, a concave portion for accommodating a plurality of LED chips 2 is provided on the bottom surface of the top surface of the substrate 1 of the light emitting device, and a convex lens-like optical member 14 having a circular shape in plan view, and in the concave portion of the optical member 14. The sealing portion 15 filled so as to cover the plurality of LED chips 2 and the color conversion member 17 that covers the optical member 14 via the air layer 19 are disposed (see FIG. 3B). The air layer 19 between the optical member 14 and the color conversion member 17 enhances the light extraction efficiency from the light emitting device 10. Further, as part of the pattern wiring on the substrate 1 of the light emitting device, a pair of inspection lines 38 are formed so as to branch from the power supply line 37 at both ends of each LED chip 2, and at one end of each inspection line 38. The inspection terminal 4 is formed so as to be away from the LED chip 2. Further, on both sides of the upper surface of the substrate 1, an electrically insulating protective film 13 is formed so as to cover a part of the power line 37, the inspection line 38, and the inspection terminal 4. The protective film 13 is formed with a plurality of through holes 16 for exposing the inspection terminals 4 individually.
　本実施形態の発光装置１０の一部を図１に示す。図１に示された基板１の上面には、複数個のＬＥＤチップ２が実装されて、複数個のＬＥＤチップ２への給電用の電源端子３１，３２と、各ＬＥＤチップ２の電気的性質を個別に点検するための点検端子４の対が形成されている。 A part of the light emitting device 10 of the present embodiment is shown in FIG. A plurality of LED chips 2 are mounted on the upper surface of the substrate 1 shown in FIG. 1, power supply terminals 31 and 32 for supplying power to the plurality of LED chips 2, and electrical properties of each LED chip 2. A pair of inspection terminals 4 for individually inspecting are formed.
　基板１は、例えば、単層あるいは多層のアルミナセラミック製の薄板で平板状に形成されている。基板１の上面には、金属薄膜（例えば、Ａｕ膜やＣｕ膜）から成り複数個のＬＥＤチップ２を接続する電源ライン３７が形成されている。基板１上の電源ライン３７には、一対の電源端子３１，３２と、１５個のＬＥＤチップ２、およびＬＥＤチップ２間を直列接続させる１４個の直列接続セグメント３３が備えられている。 The substrate 1 is formed in a flat plate shape by a thin plate made of, for example, a single layer or a multilayer alumina ceramic. On the upper surface of the substrate 1, a power line 37 made of a metal thin film (for example, an Au film or a Cu film) and connecting a plurality of LED chips 2 is formed. The power supply line 37 on the substrate 1 is provided with a pair of power supply terminals 31, 32, 15 LED chips 2, and 14 serial connection segments 33 that connect the LED chips 2 in series.
　一対の電源端子３１，３２は、複数個のＬＥＤチップ２へ電気を供給するために設けられている。一方の電源端子３１には、例えば、金線やアルミニウム線からなる金属ワイヤ７がボンディングされるランド６と、ＬＥＤチップ２の電気的性質の点検に用いられる点検端子４が設けられている。また、他方の電源端子３２には、ＬＥＤチップ２が搭載されるパッド５と、ＬＥＤチップ２の電気的性質の点検に用いられる点検端子４とを備えている。 The pair of power supply terminals 31 and 32 are provided to supply electricity to the plurality of LED chips 2. One power supply terminal 31 is provided with a land 6 to which a metal wire 7 made of, for example, a gold wire or an aluminum wire is bonded, and an inspection terminal 4 used for checking the electrical properties of the LED chip 2. The other power supply terminal 32 includes a pad 5 on which the LED chip 2 is mounted and an inspection terminal 4 used for checking the electrical properties of the LED chip 2.
　直列接続セグメント３３は、一対の電源端子３１，３２から複数個のＬＥＤチップ２に給電するために、隣り合うＬＥＤチップ２間を直列接続させ、基板１上に所望に応じて複数個設けられる。直列接続セグメント３３は、ＬＥＤチップ２が搭載されＬＥＤチップ２の下面の電極と電気接触するパッド５を一端に有し、ＬＥＤチップ２の上面の電極と金属ワイヤ７を介してボンディングされるランド６を他端に有している。各直列接続セグメント３３に対して一本ずつ延びる点検ライン３８は、パッド５に搭載されたＬＥＤチップ２の電気的性質の点検に用いる点検端子４と直列接続セグメント３３とを導通させている。 In order to feed power to the plurality of LED chips 2 from the pair of power supply terminals 31, 32, the series connection segments 33 are connected in series between the adjacent LED chips 2, and a plurality of series connection segments 33 are provided on the substrate 1 as desired. The serial connection segment 33 has a pad 5 on one end of which the LED chip 2 is mounted and which is in electrical contact with the electrode on the lower surface of the LED chip 2. The land 6 is bonded to the electrode on the upper surface of the LED chip 2 via the metal wire 7. At the other end. An inspection line 38 extending one by one for each series connection segment 33 connects the inspection terminal 4 used for inspection of the electrical properties of the LED chip 2 mounted on the pad 5 to the series connection segment 33.
　直列接続セグメント３３のパッド５、ランド６および点検端子４の配置は、基板１におけるＬＥＤチップ２の配置に応じて、適宜決定される。例えば、直列接続セグメント３３のパッド５から２本の配線を延ばし、一方の配線の先端には、金属ワイヤ７を介してＬＥＤチップ２とボンディングされるランド６が設けられ、他方の配線の先端には、基板１の中央から離れた点に点検端子４が設けられる。また、直列接続セグメント３３のパッド５から延在する配線の先端に点検端子４が設けられて、パッド５と点検端子４との間の配線から分岐する形で別の配線を設けて、その配線の先端にランド６を形成することもできる。さらにまた、直列接続セグメント３３のパッド５から延びる配線の先端に点検端子４を配し、パッド５と点検端子４間の配線幅の一部を広げランド６とすることもできる。 The arrangement of the pad 5, the land 6 and the inspection terminal 4 of the serial connection segment 33 is appropriately determined according to the arrangement of the LED chip 2 on the substrate 1. For example, two wires are extended from the pad 5 of the serial connection segment 33, and a land 6 bonded to the LED chip 2 via a metal wire 7 is provided at the tip of one wire, and at the tip of the other wire. The inspection terminal 4 is provided at a point away from the center of the substrate 1. Further, the inspection terminal 4 is provided at the tip of the wiring extending from the pad 5 of the series connection segment 33, and another wiring is provided in a form branched from the wiring between the pad 5 and the inspection terminal 4, and the wiring A land 6 can also be formed at the tip of each of them. Furthermore, the inspection terminal 4 can be arranged at the tip of the wiring extending from the pad 5 of the serial connection segment 33, and a part of the wiring width between the pad 5 and the inspection terminal 4 can be widened to be the land 6.
　なお、本実施形態の発光装置１０に用いられるＬＥＤチップ２は、厚み方向の両側に一対の電極が形成されており、一方の電極（例えば、カソード）がパッド５にＡｕＳｎやＡｇペーストなどからなる接合部８を用いてダイボンド接続により電気的に接続することができ、他方の電極（例えば、アノード）が金属ワイヤ７を介してランド６と電気的に接続することができるものである。 The LED chip 2 used in the light emitting device 10 of this embodiment has a pair of electrodes formed on both sides in the thickness direction, and one electrode (for example, a cathode) is made of AuSn or Ag paste on the pad 5. The junction 8 can be used for electrical connection by die-bonding, and the other electrode (for example, anode) can be electrically connected to the land 6 via the metal wire 7.
　ＬＥＤチップ２は、発光装置１０から放射させる所望の光色によって種々の化合物半導体を用いることができるが、照明用途に利用する場合は、白色光を得るために色変換部材１７に含有された蛍光体を効率よく励起可能なＧａＮ系化合物半導体を用いた高出力のＬＥＤチップ２であることが好ましい。 The LED chip 2 can use various compound semiconductors depending on the desired light color radiated from the light emitting device 10, but when used for illumination, the fluorescent light contained in the color conversion member 17 to obtain white light. A high-power LED chip 2 using a GaN-based compound semiconductor that can efficiently excite the body is preferable.
　ＧａＮ系化合物半導体は、ＭＯＣＶＤ法により、サファイア基板、スピネル基板などの絶縁性基板上やＳｉＣ基板、ＧａＮ基板などの導電性基板上に形成される。ＬＥＤチップ２の結晶成長基板として導電性基板が用いられた場合は、この導電性基板とパッド５とは、上述のようにＡｇペーストやＡｕＳｎなどからなる接合部８を用いて接合される。 The GaN-based compound semiconductor is formed on an insulating substrate such as a sapphire substrate or a spinel substrate, or on a conductive substrate such as an SiC substrate or a GaN substrate by MOCVD. When a conductive substrate is used as the crystal growth substrate of the LED chip 2, the conductive substrate and the pad 5 are bonded using the bonding portion 8 made of Ag paste, AuSn, or the like as described above.
　結晶成長基板として絶縁性基板が用いられた場合は、ＬＥＤチップ２をフリップチップ実装させるか、この絶縁性基板がパッド５にエポキシ樹脂などで固着される。どちらの場合でも、ＬＥＤチップ２は放熱性が高い接合部８で固着されることが好ましい。ＬＥＤチップ２の裏面側となる絶縁性基板を固着した場合、ＬＥＤチップ２の表面側に設けられた一対の電極をそれぞれ金属ワイヤ７などによって、ランド６とボンディング接続することで、電気的に接続することができる。なお、ＬＥＤチップ２は、結晶成長後にＳｉなどの支持用基板を貼り合わせてからサファイア基板などの結晶成長用基板を剥離したものを用いることもでき、結晶成長基板に導電性基板を用いたＬＥＤチップ２と同様に取り扱うことができる。 When an insulating substrate is used as the crystal growth substrate, the LED chip 2 is flip-chip mounted, or the insulating substrate is fixed to the pad 5 with an epoxy resin or the like. In either case, the LED chip 2 is preferably fixed at the joint 8 having high heat dissipation. When an insulating substrate on the back surface side of the LED chip 2 is fixed, a pair of electrodes provided on the front surface side of the LED chip 2 are bonded to the land 6 by a metal wire 7 or the like to be electrically connected. can do. Note that the LED chip 2 can be formed by bonding a support substrate such as Si after crystal growth and then peeling off the crystal growth substrate such as a sapphire substrate, and an LED using a conductive substrate as the crystal growth substrate. It can be handled in the same manner as the chip 2.
　このようなＬＥＤチップ２を平板状の基板１の中央に密集して実装配置させる場合、直列接続セグメント３３などのパッド５およびランド６は基板１の中央に密集して設けると共に、点検端子４は基板１において中央から離れるように設けられることが好ましい。また、基板１の周縁に配置される各点検端子４は、平板状の基板１における一辺と平行でジグザグに配列されることがより好ましい。これにより、点検端子４に検査用のプローブ電極２０を接触させてＬＥＤチップ２の電気的性質を点検する場合において、プローブ電極２０の間隔を確保しつつ、プローブ電極２０の移動距離を少なくし検査工程の速度を向上させることができる。また、一対の電源端子３１，３２は、複数個のＬＥＤチップ２を覆う光学部材１４や色変換部材１７と干渉しないように、それぞれ隣接して平板状の基板１の四隅のうちの一隅に配置されることが好ましい。 When such LED chips 2 are densely mounted and arranged at the center of the flat substrate 1, the pads 5 and lands 6 such as the series connection segments 33 are provided densely at the center of the substrate 1, and the inspection terminals 4 are The substrate 1 is preferably provided so as to be away from the center. Moreover, it is more preferable that the inspection terminals 4 arranged on the periphery of the substrate 1 are arranged in a zigzag parallel to one side of the flat substrate 1. Thus, when the inspection probe electrode 20 is brought into contact with the inspection terminal 4 to inspect the electrical properties of the LED chip 2, the distance between the probe electrodes 20 is ensured while the movement distance of the probe electrode 20 is reduced to perform the inspection. The speed of the process can be improved. The pair of power supply terminals 31 and 32 are arranged at one corner of the four corners of the flat substrate 1 so as not to interfere with the optical member 14 and the color conversion member 17 covering the plurality of LED chips 2. It is preferred that
　次に、本実施形態の発光装置１０における概略回路図を図２Ａに示す。図２Ａには複数個のＬＥＤチップ２が直列接続されており、その複数個のＬＥＤチップ２の両端には、そのＬＥＤチップ２を点灯させるために電気を供給する一対の電源端子３１，３２が接続されている。また、各ＬＥＤチップ２間には、直列接続させるための直接接続セグメント３３が設けられ、直列接続セグメント３３は各ＬＥＤチップ２の電気的性質の点検用に用いられる点検端子４を一端に有する点検ラインが一本分岐する形でそれぞれ備えている。 Next, a schematic circuit diagram of the light emitting device 10 of the present embodiment is shown in FIG. 2A. In FIG. 2A, a plurality of LED chips 2 are connected in series, and a pair of power supply terminals 31 and 32 for supplying electricity to light the LED chips 2 are provided at both ends of the LED chips 2. It is connected. In addition, a direct connection segment 33 for connecting in series is provided between the LED chips 2, and the series connection segment 33 has an inspection terminal 4 used for inspection of the electrical properties of each LED chip 2 at one end. Each line is provided with a single branch.
　そのため一対の電源端子３１，３２間に順方向電圧を印加すると、複数個のＬＥＤチップ２に直列接続セグメント３３を介して電流が流れ、ＬＥＤチップ２が同時に点灯する。また、基板１上に設けられた点検端子４は、プローブ電極２０に接触されることで、各ＬＥＤチップ２の電気的性質の個別点検を可能にしている。 Therefore, when a forward voltage is applied between the pair of power supply terminals 31 and 32, a current flows through the plurality of LED chips 2 via the serial connection segment 33, and the LED chips 2 are turned on simultaneously. Moreover, the inspection terminal 4 provided on the board | substrate 1 enables the individual inspection of the electrical property of each LED chip 2 by contacting the probe electrode 20. FIG.
　なお、複数個のＬＥＤチップ２が直列接続された図２Ａの回路は一つでもよく、電源ライン３７と電源端子３１，３２との接合数によって接合信頼性が低下しなければ複数でもよい。さらに、図２Ｂに示すような、複数個のＬＥＤチップ２が直列に接続された回路が並列接続された回路を採用してもよい。この場合においても、一対の電源端子３１，３２間に順方向電圧を印加すると、複数個のＬＥＤチップ２は直列接続セグメント３３を介して電流が流れ同時に点灯する。また、一対の電源端子３１，３２とは別に設けられた点検端子４により、各ＬＥＤチップ２の電気的性質を個別に点検することも可能となる。 Note that the circuit of FIG. 2A in which a plurality of LED chips 2 are connected in series may be one, and may be plural if the junction reliability is not lowered by the number of junctions between the power supply line 37 and the power supply terminals 31 and 32. Furthermore, a circuit in which a plurality of LED chips 2 connected in series as shown in FIG. 2B are connected in parallel may be adopted. Even in this case, when a forward voltage is applied between the pair of power supply terminals 31 and 32, a plurality of LED chips 2 are lit simultaneously through the current flowing through the series connection segments 33. In addition, the inspection terminals 4 provided separately from the pair of power supply terminals 31 and 32 can individually inspect the electrical properties of the LED chips 2.
　次に、図１に示す基板１上に、光学部材１４、封止部１５および保護膜１３を設けた状態の発光装置１０の断面図を図５に示す。 Next, FIG. 5 shows a cross-sectional view of the light emitting device 10 in a state where the optical member 14, the sealing portion 15, and the protective film 13 are provided on the substrate 1 shown in FIG.
　図５には、基板１上の中央（実装エリア）においてＬＥＤチップ２が実装され、実装エリアの両側には、基板１上に保護膜１３（例えば、ガラス膜）が形成されている。また、実装エリア上には、ＬＥＤチップ２からの光を集光する凸レンズ状の光学部材１４が設けられ、光学部材１４のカバー底面に設けられた凹部内にＬＥＤチップ２を封止するように封止部１５が充填配置してある。 In FIG. 5, the LED chip 2 is mounted in the center (mounting area) on the substrate 1, and a protective film 13 (for example, a glass film) is formed on the substrate 1 on both sides of the mounting area. Further, on the mounting area, a convex lens-shaped optical member 14 that condenses the light from the LED chip 2 is provided, and the LED chip 2 is sealed in a recess provided on the bottom surface of the cover of the optical member 14. The sealing part 15 is filled and arranged.
　以下、基板１上に形成させた保護膜１３について説明する。本実施形態では、平板状の基板１の四隅のうちの一隅部に配置された電源端子３１，３２、基板１の中央から離れて形成された点検端子４および実装エリアを除いて、基板１上に保護膜１３が形成されている（図１、図３Ａを参照）。電源端子３１，３２および各ＬＥＤチップ２に導通する点検端子４上には、図５で示すように保護膜１３の厚み方向に貫設された貫通孔１６が形成されることになる。 Hereinafter, the protective film 13 formed on the substrate 1 will be described. In the present embodiment, the power supply terminals 31 and 32 disposed at one corner of the four corners of the flat substrate 1, the inspection terminal 4 formed away from the center of the substrate 1, and the mounting area are excluded. A protective film 13 is formed (see FIGS. 1 and 3A). As shown in FIG. 5, a through hole 16 penetrating in the thickness direction of the protective film 13 is formed on the power supply terminals 31, 32 and the inspection terminal 4 that is electrically connected to each LED chip 2.
　基板１の実装エリア内においては、一対の電源端子３１，３２から電流が供給されることで点灯する複数個のＬＥＤチップ２や、パッド５、ランド６が配置されている。 In the mounting area of the substrate 1, a plurality of LED chips 2, pads 5, and lands 6 that are turned on when current is supplied from a pair of power supply terminals 31 and 32 are arranged.
　保護膜１３がＬＥＤチップ２と導通している基板１上の電源ライン３７や点検ライン３８の露出を減らすことで、静電気が流れることによりＬＥＤチップ２を破損させる可能性を低減することができる（図３Ａを参照）。また、保護膜１３の材料として、ガラスやセラミックなどの無機材料を採用することで、電源ライン３７や点検ライン３８が湿気、酸化や硫化などにより劣化することを抑制することが可能となり信頼性の高い発光装置１０とすることができる。 By reducing the exposure of the power supply line 37 and the inspection line 38 on the substrate 1 in which the protective film 13 is electrically connected to the LED chip 2, the possibility of damaging the LED chip 2 due to the flow of static electricity can be reduced ( (See FIG. 3A). Further, by adopting an inorganic material such as glass or ceramic as the material of the protective film 13, it is possible to suppress deterioration of the power supply line 37 and the inspection line 38 due to moisture, oxidation, sulfurization, etc. A high light emitting device 10 can be obtained.
　点検用のプローブ電極２０を、保護膜１３に貫設された貫通孔１６内に挿入し、基板１上の点検端子４と接触させることで、各ＬＥＤチップ２の電気的性質を個別に点検することができる。ＬＥＤチップ２の電気的性質を個別に点検する場合、保護膜１３に貫設された貫通孔１６により、プローブ電極２０で基板１の点検端子４を滑ることなく確実に押し当てることができる。 The electrical property of each LED chip 2 is individually inspected by inserting a probe electrode 20 for inspection into a through hole 16 penetrating the protective film 13 and making contact with the inspection terminal 4 on the substrate 1. be able to. When individually checking the electrical properties of the LED chip 2, it is possible to reliably press the inspection terminal 4 of the substrate 1 with the probe electrode 20 without slipping by the through-hole 16 provided in the protective film 13.
　次に、基板１上に設けられる光学部材１４について説明する。 Next, the optical member 14 provided on the substrate 1 will be described.
　光学部材１４は、ＬＥＤチップ２を外部から保護し、ＬＥＤチップ２からの光を集光するために平面視形状が円形状の凸レンズ状の形状に形成されている。光学部材１４の材料としては、例えば、透光性のシリコーン樹脂、アクリル樹脂、エポキシ樹脂などの有機材料やガラスなどの無機材料を用いることができる。また、凸レンズ状に形成された光学部材１４の底面には、凹部を好適に設け、凹部内に封止部１５として透光性樹脂が充填することができる。この場合、光学部材１４の凹部内に、基板１上のＬＥＤチップ２、パッド５およびランド６が配置された実装エリアが納められることになる。光学部材１４を、凸レンズ状のカバーと、凹部内に充填される封止部１５から構成する場合は、ＬＥＤチップ２からの光取り出し効率を高めるために、封止部１５は上記カバーの屈折率以上の屈折率を持った透光性材料を用いることが好ましい。さらに、封止部１５をゲル状樹脂とした場合、光学部材１４の凹部内でＬＥＤチップ２の発熱や冷却に起因する熱応力から金属ワイヤ７の断線等を防止することもできる。このような封止部１５の材料として、例えば、ゲル状シリコーンが好適に挙げられる。 The optical member 14 is formed in a convex lens shape having a circular shape in plan view in order to protect the LED chip 2 from the outside and condense light from the LED chip 2. As a material of the optical member 14, for example, an organic material such as a translucent silicone resin, an acrylic resin, or an epoxy resin, or an inorganic material such as glass can be used. Further, a concave portion is suitably provided on the bottom surface of the optical member 14 formed in a convex lens shape, and the concave portion can be filled with a translucent resin as the sealing portion 15. In this case, the mounting area in which the LED chip 2, the pad 5, and the land 6 on the substrate 1 are disposed is accommodated in the recess of the optical member 14. When the optical member 14 is composed of a convex lens-shaped cover and a sealing portion 15 filled in the concave portion, the sealing portion 15 has a refractive index of the cover in order to increase the light extraction efficiency from the LED chip 2. It is preferable to use a translucent material having the above refractive index. Furthermore, when the sealing part 15 is made of a gel-like resin, disconnection of the metal wire 7 can be prevented from thermal stress caused by heat generation or cooling of the LED chip 2 in the recess of the optical member 14. As a material for such a sealing portion 15, for example, gel-like silicone is preferably exemplified.
　光学部材１４を基板１に実装する際には、光学部材１４の底面に設けられた凹部内に封止部１５の材料となる未硬化のゲル状シリコーンを充填し、光学部材１４の上に基板１を裏返した状態で、光学部材１４を基板１に対して位置決めして嵌め込む。次に、ゲル状シリコーンを硬化させることで、発光装置１０を形成することができる。なお、図４には光学部材１４と光学部材１４上の色変換部材１７とを底面側（基板１との係合面）から示してある。光学部材１４の底面の中央に封止部１５が好適に形成される凹部がある。また、光学部材１４の底面には、一対の第１の段差部１４ｄ，１４ｄと、それより深い第２の段差部１４ｆが設けられ、第１の段差部１４ｄから光学部材１４における内側に突出した突部１４ｅ，１４ｅが形成されている。光学部材１４の第１の段差部１４ｄ，１４ｄは、基板１上の保護膜１３と勘合し、光学部材１４の突部１４ｅ，１４ｅは、基板１の中央に設けられた切欠部１ｅ，１ｅを嵌め合わせて勘合係止することができる。第２の段差部１４ｆには、基板１上の保護膜１３と勘合することができる溝部１４ｂが設けられている。 When the optical member 14 is mounted on the substrate 1, uncured gel-like silicone, which is a material for the sealing portion 15, is filled in the recess provided on the bottom surface of the optical member 14, and the substrate is placed on the optical member 14. With the 1 turned over, the optical member 14 is positioned and fitted to the substrate 1. Next, the light emitting device 10 can be formed by curing the gel-like silicone. In FIG. 4, the optical member 14 and the color conversion member 17 on the optical member 14 are shown from the bottom surface side (engagement surface with the substrate 1). There is a recess in the center of the bottom surface of the optical member 14 where the sealing portion 15 is suitably formed. The bottom surface of the optical member 14 is provided with a pair of first stepped portions 14d and 14d and a second stepped portion 14f deeper than the paired first stepped portions 14d and 14d, and projects inward from the first stepped portion 14d. Projections 14e, 14e are formed. The first step portions 14 d and 14 d of the optical member 14 are fitted with the protective film 13 on the substrate 1, and the protrusions 14 e and 14 e of the optical member 14 are formed by notching the notches 1 e and 1 e provided at the center of the substrate 1. It can be fitted and locked. The second stepped portion 14f is provided with a groove portion 14b that can be fitted with the protective film 13 on the substrate 1.
　次に、光学部材１４が形成された発光装置１０上に、空気層１９を介して被覆した色変換部材１７について説明する。 Next, the color conversion member 17 covered with the air layer 19 on the light emitting device 10 on which the optical member 14 is formed will be described.
　色変換部材１７は、光学部材１４を被覆し、ＬＥＤチップ２からの波長の少なくとも一部を変換して放射可能なものである。色変換部材１７は、平面視形状が光学部材１４よりも大きな円形状に形成され、一部が基板１の端部からはみ出している（図３Ａを参照）。色変換部材１７の断面図は、凸形状をしており内部に光学部材１４を収容可能な凹部を有している（図３Ｂを参照）。このような色変換部材１７としては、透光性材料（例えば、シリコーン樹脂）を採用し、ＬＥＤチップ２から放射された波長をより長波長の光に変換する蛍光体（例えば、ＬＥＤチップ２からの青色光を吸収し黄色の波長を発光する蛍光体）を含有させることで構成することができる。 The color conversion member 17 covers the optical member 14 and can radiate by converting at least a part of the wavelength from the LED chip 2. The color conversion member 17 is formed in a circular shape whose plan view is larger than that of the optical member 14, and part of the color conversion member 17 protrudes from the end of the substrate 1 (see FIG. 3A). The cross-sectional view of the color conversion member 17 has a convex shape and a concave portion that can accommodate the optical member 14 therein (see FIG. 3B). As such a color conversion member 17, a translucent material (for example, silicone resin) is adopted, and a phosphor (for example, from the LED chip 2) that converts the wavelength emitted from the LED chip 2 into light having a longer wavelength. The phosphor that absorbs blue light and emits a yellow wavelength) can be included.
　したがって、例えば、ＬＥＤチップ２が青色の光を発光し、ＬＥＤチップ２からの青色の光と、蛍光体が発光する黄色の光とが、色変換部材１７の光出射面を通して放射されることにより、発光装置１０から白色光を得ることができる。なお、色変換部材１７の透光性材料としては、シリコーン樹脂に限られず、例えば、アクリル樹脂、エポキシ樹脂、ガラスや有機成分と無機成分とがｎｍレベル若しくは分子レベルで混合、結合した有機・無機ハイブリッド材料などを採用してもよい。 Therefore, for example, the LED chip 2 emits blue light, and the blue light from the LED chip 2 and the yellow light emitted from the phosphor are emitted through the light exit surface of the color conversion member 17. White light can be obtained from the light emitting device 10. The translucent material of the color conversion member 17 is not limited to a silicone resin. For example, an acrylic / epoxy resin, glass or organic / inorganic in which organic components and inorganic components are mixed and bonded at the nm level or molecular level. A hybrid material or the like may be used.
　また、色変換部材１７に含有される蛍光体として、例えば、ＬＥＤチップ２から青色の光を放射する場合は、黄色の光を発光する蛍光体だけでなく、緑色、赤色が発光可能な蛍光体を用いることで発光装置１０から白色光を得ることができる。また、蛍光体は、青色、緑色、赤色や白色が発光可能な蛍光体などＬＥＤチップ２から放出される波長（例えば、紫外線）と、得ようとする目的の色によって種々選択することができる。このような、色変換部材１７の下面の中央において基板１に重なる部位を、接着剤（例えば、エポキシ樹脂）で固着することができる。 Further, as phosphors contained in the color conversion member 17, for example, when emitting blue light from the LED chip 2, phosphors capable of emitting green and red as well as phosphors emitting yellow light. Can be used to obtain white light from the light emitting device 10. The phosphor can be variously selected according to the wavelength (for example, ultraviolet rays) emitted from the LED chip 2 such as a phosphor capable of emitting blue, green, red and white, and the target color to be obtained. Such a portion overlapping the substrate 1 in the center of the lower surface of the color conversion member 17 can be fixed with an adhesive (for example, epoxy resin).
　なお、本実施形態の発光装置１０に用いられる基板１には、平面視形状が矩形状の四隅のうち、対角となる一対の隅部に、照明器具の筐体などに固定するための固定ねじ（図示せず）ためのねじ固定切欠部１ｆが好適に形成されている。また、基板１の長手方向の中央両側面には切欠部１ｅが好適に形成されており、切欠部１ｅは光学部材１４における第１の両段差部１４ｄ，１４ｄから互いに近づく向きに突設された突起部１４ｅ，１４ｅが係合可能となっている。 Note that the substrate 1 used in the light emitting device 10 of the present embodiment is fixed to be fixed to a housing of a lighting fixture or the like at a pair of diagonal corners among four corners having a rectangular shape in plan view. A screw fixing notch 1f for a screw (not shown) is suitably formed. Further, notches 1e are suitably formed on both side surfaces in the longitudinal direction of the substrate 1, and the notches 1e project from the first step portions 14d and 14d of the optical member 14 so as to approach each other. The protrusions 14e and 14e can be engaged.
　本実施形態において、一対の電源端子３１，３２は、図６の発光装置１０の断面図で例示するようにＬＥＤチップ２が配置される基板１の上面に必ず設ける必要もない。例えば、基板１をセラミック基板により形成する場合には、セラミック基板の上面に、一対の電源端子３１，３２を形成せずに、上述と同様のパターン配線を形成する。直列接続セグメント３３のパッド５には、例えば、金すずからなる接合部８によりＬＥＤチップ２をダイボンド接続し、ＬＥＤチップ２の一方の電極（図示せず）と電気的に接続してある。 In the present embodiment, the pair of power supply terminals 31 and 32 are not necessarily provided on the upper surface of the substrate 1 on which the LED chip 2 is arranged as illustrated in the cross-sectional view of the light emitting device 10 in FIG. For example, when the substrate 1 is formed of a ceramic substrate, the same pattern wiring as described above is formed on the upper surface of the ceramic substrate without forming the pair of power supply terminals 31 and 32. The LED chip 2 is die-bonded to the pad 5 of the series connection segment 33 by, for example, a bonding portion 8 made of gold tin, and electrically connected to one electrode (not shown) of the LED chip 2.
　また、ＬＥＤチップ２の他方の電極（図示せず）と、他の配線３４に接続されるランド６とを金属ワイヤ７によりボンディング接続してある。 In addition, the other electrode (not shown) of the LED chip 2 and the land 6 connected to the other wiring 34 are bonded to each other by a metal wire 7.
　この構成においては、基板１の厚み方向にビア９，９を埋設させ、基板１の上面に形成された配線３４などと、基板１の下面に形成された配線とをビア９，９を介して電気的に接続されることで、基板１の下面に形成された配線が電源端子３１，３２として機能することになる。 In this configuration, vias 9 and 9 are embedded in the thickness direction of the substrate 1, and the wiring 34 formed on the upper surface of the substrate 1 and the wiring formed on the lower surface of the substrate 1 are connected via the vias 9 and 9. By being electrically connected, the wiring formed on the lower surface of the substrate 1 functions as the power supply terminals 31 and 32.
　さらに、基板１は、セラミック基板に限定するものではなく、表面にパターン配線を形成できる樹脂基板（例えば、絶縁性の高いガラスエポキシ樹脂基板や耐熱性の液晶ポリマー基板など）を用いることもできる。この場合、ＬＥＤチップ２を電気的に接続させるためのパターン配線は、樹脂基板上に金属薄膜を張り合わせた後、所望のパターンになるようにエッチングして形成することができる。 Furthermore, the substrate 1 is not limited to a ceramic substrate, and a resin substrate (for example, a highly insulating glass epoxy resin substrate or a heat-resistant liquid crystal polymer substrate) on which pattern wiring can be formed on the surface can also be used. In this case, the pattern wiring for electrically connecting the LED chip 2 can be formed by laminating a metal thin film on a resin substrate and then etching to form a desired pattern.
　また、基板１は、図７の発光装置１０の断面図で例示するようにＬＥＤチップ２で発生した熱を効率よく外部に放出するため、例えば、アルミニウム基板からなる金属基板１１上にＡｌＮ膜からなる絶縁層１２介してパターン配線が形成された金属ベース基板でも良い。パターン配線は絶縁層１２上に設けられ、一対の電源端子３１，３２、直列接続セグメント３３として機能する。 Further, as illustrated in the cross-sectional view of the light emitting device 10 in FIG. 7, the substrate 1 efficiently releases the heat generated in the LED chip 2 to the outside. For example, an AlN film is formed on a metal substrate 11 made of an aluminum substrate. A metal base substrate on which pattern wirings are formed through the insulating layer 12 may be used. The pattern wiring is provided on the insulating layer 12 and functions as a pair of power supply terminals 31 and 32 and a series connection segment 33.
　直列接続セグメント３３のパッド５上には、例えば、半田からなる接合部８によりＬＥＤチップ２が載置され、ＬＥＤチップ２の一方の電極と接合される。また、ＬＥＤチップ２の他方の電極は、金属ワイヤ７により、一方の電源端子３１から延びる配線の先端に形成されたランド６とボンディング接続される。なお、絶縁層１２上に形成されたパターン配線は、平面視において図１で示したものと同様のパターンに形成することができ、基板１上に複数個のＬＥＤチップ２への給電用の電源端子３１，３２とは別に、各ＬＥＤチップ２の電気的性質を個別に点検するための点検端子４が設けられている（図示せず）。 On the pad 5 of the serial connection segment 33, the LED chip 2 is placed by, for example, a joint 8 made of solder, and is joined to one electrode of the LED chip 2. The other electrode of the LED chip 2 is bonded to the land 6 formed at the tip of the wiring extending from the one power supply terminal 31 by the metal wire 7. The pattern wiring formed on the insulating layer 12 can be formed in a pattern similar to that shown in FIG. 1 in plan view, and a power supply for supplying power to the plurality of LED chips 2 on the substrate 1. Apart from the terminals 31 and 32, an inspection terminal 4 for individually checking the electrical properties of each LED chip 2 is provided (not shown).
　（実施形態２）
　本実施形態の発光装置１０における基本構成は実施形態１と略同一であり、基板１上に形成されたパターン配線を保護する保護膜１３上に発光装置１０の製造時に生じる余分な接着剤の流れを堰き止めるダム部１８を備えた点が異なる。なお、実施形態１と同様の構成要素には、同一の符号を付して説明を適宜省略する。 (Embodiment 2)
The basic configuration of the light emitting device 10 of the present embodiment is substantially the same as that of the first embodiment, and the flow of excess adhesive that occurs during the manufacture of the light emitting device 10 on the protective film 13 that protects the pattern wiring formed on the substrate 1. The difference is that a dam portion 18 for damming is provided. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted suitably.
　図８Ａ、図８Ｂに示すように色変換部材１７を基板１上に接着剤を用いて固定させる場合、接着剤の余剰分が保護膜１３上にはみ出す場合がある。この場合、はみ出した接着剤は、平面視形状が円形の色変換部材１７の縁から長方形状の基板１の短辺側に流れ、電源端子３１，３２や点検端子４を露出するために設けられた保護膜１３の貫通孔１６を塞ぐ場合もある。同様に、光学部材１４の嵌め込み時に封止部１５の材料となる未硬化樹脂の余剰分が保護膜１３上にはみ出す場合がある。この場合、はみ出した未硬化樹脂は、電源端子３１，３２や点検端子４を露出するために設けられた保護膜１３の貫通孔１６を塞ぐ場合もある。 8A and 8B, when the color conversion member 17 is fixed on the substrate 1 using an adhesive, an excessive amount of the adhesive may protrude onto the protective film 13. In this case, the protruding adhesive flows to the short side of the rectangular substrate 1 from the edge of the color conversion member 17 having a circular shape in plan view, and is provided to expose the power supply terminals 31 and 32 and the inspection terminal 4. The through hole 16 of the protective film 13 may be blocked. Similarly, when the optical member 14 is fitted, a surplus of uncured resin that becomes the material of the sealing portion 15 may protrude onto the protective film 13. In this case, the uncured resin that protrudes may block the through hole 16 of the protective film 13 provided to expose the power supply terminals 31 and 32 and the inspection terminal 4.
　そのため、ダム部１８は、接着剤等の余剰分が保護膜１３に貫設された貫通孔１６上にはみ出さないように、保護膜１３上に突出して設けることができる。ダム部１８は、平面視形状が円形状の色変換部材１７の縁に沿って、色変換部材１７の縁から長方形状の基板１の短辺側に流れようとする接着剤等の余剰分を堰き止めるような構成としてある。 Therefore, the dam portion 18 can be provided so as to protrude on the protective film 13 so that an excessive amount of an adhesive or the like does not protrude onto the through hole 16 provided in the protective film 13. The dam part 18 removes an excess of an adhesive or the like that tends to flow from the edge of the color conversion member 17 to the short side of the rectangular substrate 1 along the edge of the color conversion member 17 having a circular shape in plan view. It is configured as a dam.
　このようなダム部１８は、保護膜１３をガラスで形成させた場合は、保護膜１３上に再度、ガラス膜を設けることにより形成することができる。また、基板１をセラミックから構成させる場合は、セラミックからなるダム部１８を基板１と一体成形することもできる。 Such a dam portion 18 can be formed by providing a glass film again on the protective film 13 when the protective film 13 is formed of glass. When the substrate 1 is made of ceramic, the dam portion 18 made of ceramic can be integrally formed with the substrate 1.
　基板１に形成されたダム部１８は、接着剤等の余剰分が保護膜１３に貫設された貫通孔１６上にはみ出さないように保護するだけでなく、光学部材１４や色変換部材１７の位置決めを容易に行うことができるという効果も併せ持つことができる。 The dam portion 18 formed on the substrate 1 not only protects the surplus portion of the adhesive or the like from protruding over the through hole 16 penetrating the protective film 13 but also the optical member 14 and the color conversion member 17. It is also possible to have an effect that the positioning can be easily performed.
　（実施形態３）
　本実施形態の発光装置１０における基本構成は実施形態１と略同一であり、保護膜１３に貫設された貫通孔１６の形状を変えた点が異なる。なお、実施形態１と同様の構成要素には、同一の符号を付して説明を適宜省略する。 (Embodiment 3)
The basic configuration of the light emitting device 10 of the present embodiment is substantially the same as that of the first embodiment, except that the shape of the through hole 16 penetrating the protective film 13 is changed. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted suitably.
　本実施形態の発光装置１０における基板１に設けられた貫通孔１６は、図９の断面図に示されるように、貫通孔１６はテーパ状に形成されて、貫通孔１６の断面積が基板１から離れるにつれて大きくなるように形成されている。本実施形態の発光装置１０における貫通孔１６は、このようなテーパ形状を有することで、点検用のプローブ電極２０の位置決めを容易にさせている。 As shown in the sectional view of FIG. 9, the through hole 16 provided in the substrate 1 in the light emitting device 10 of the present embodiment is formed in a tapered shape, and the sectional area of the through hole 16 is the substrate 1. It is formed so that it becomes large as it leaves. The through-hole 16 in the light emitting device 10 of the present embodiment has such a tapered shape, so that the probe electrode 20 for inspection can be easily positioned.

Claims (5)

  1. 　複数のＬＥＤチップを上面に搭載する電気絶縁性の基板と、
    上記基板に形成されて複数のＬＥＤチップを接続する電源ラインと、
    上記電源ラインの両端に形成された電源端子とを備えた発光装置であって、
    各ＬＥＤチップの両端で上記電源ラインから分岐する一対の点検ラインを有し、
    各点検ラインの一端で上記ＬＥＤチップから離れた点に形成された点検端子を備えたことを特徴とする発光装置。
    An electrically insulating substrate on which a plurality of LED chips are mounted;
    A power line formed on the substrate for connecting a plurality of LED chips;
    A light emitting device including power terminals formed at both ends of the power line,
    Each LED chip has a pair of inspection lines branched from the power supply line at both ends,
    A light-emitting device comprising an inspection terminal formed at a point away from the LED chip at one end of each inspection line.
  2. 　上記電源ライン、上記点検ライン、及び上記点検端子が、上記の基板の上面に形成され、
    上記電源ラインの一部、上記点検ライン及び上記点検端子を覆う電気絶縁性の保護膜が上記基板の上面に形成され、
    保護膜に形成された貫通孔を介して、上記点検端子が露出したことを特徴とする請求項１に記載の発光装置。
    The power line, the inspection line, and the inspection terminal are formed on the upper surface of the substrate,
    An electrically insulating protective film covering a part of the power line, the inspection line and the inspection terminal is formed on the upper surface of the substrate,
    The light-emitting device according to claim 1, wherein the inspection terminal is exposed through a through hole formed in the protective film.
  3. 　上記貫通孔はテーパ状に形成されてその断面積が上記基板から離れるにつれて大きくなったことを特徴とする請求項２に記載の発光装置。
    The light-emitting device according to claim 2, wherein the through hole is formed in a tapered shape, and a cross-sectional area thereof increases as the distance from the substrate increases.
  4. 　上記電源ラインは、直列接続される隣り合う２つのＬＥＤチップ間を接続する直列接続セグメントを含み、各直列接続セグメントの一端に、一方のＬＥＤチップを搭載してこのＬＥＤチップの下面の電極に電気接触するパッドが形成され、各直列セグメントの他端に他方のＬＥＤチップの上面の電極とワイヤを介してボンディングされるランドが形成され、各直列接続セグメントから上記の点検ラインが一本のみ分岐したことを特徴とする請求項２または３に記載の発光装置。
    The power supply line includes a series connection segment for connecting two adjacent LED chips connected in series. One LED chip is mounted on one end of each series connection segment, and an electrode on the lower surface of the LED chip is electrically connected. A contact pad is formed, and a land bonded to the other end of each series segment via an electrode and a wire on the upper surface of the other LED chip is formed, and only one inspection line is branched from each series connection segment. The light-emitting device according to claim 2, wherein:
  5. 　複数の上記ＬＥＤチップを覆う単一の封止部が設けられ、
    この封止部が上記パッド及び上記ランドの全てと、上記電源ラインと上記点検ラインの一部を覆い、
    上記封止部で覆われた部分以外の上記電源ラインと上記点検ラインが保護膜で覆われたことを特徴とする請求項４に記載の発光装置。     A single sealing portion that covers the plurality of LED chips is provided,
    This sealing part covers all of the pad and the land, part of the power line and the inspection line,
    The light emitting device according to claim 4, wherein the power supply line and the inspection line other than the portion covered with the sealing portion are covered with a protective film.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012227470A (en) * 2011-04-22 2012-11-15 Citizen Holdings Co Ltd Semiconductor light emitting device and manufacturing method of the same
WO2013092435A1 (en) * 2011-12-22 2013-06-27 Osram Opto Semiconductors Gmbh Connection board, optoelectronic component arrangement, and illumination device

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102315371A (en) 2010-07-05 2012-01-11 松下电工株式会社 Light-emitting device
JP2012015466A (en) * 2010-07-05 2012-01-19 Panasonic Electric Works Co Ltd Light emitting device
JP5669525B2 (en) * 2010-11-08 2015-02-12 スタンレー電気株式会社 Semiconductor light emitting device
US8564000B2 (en) 2010-11-22 2013-10-22 Cree, Inc. Light emitting devices for light emitting diodes (LEDs)
US9490235B2 (en) 2010-11-22 2016-11-08 Cree, Inc. Light emitting devices, systems, and methods
US8624271B2 (en) 2010-11-22 2014-01-07 Cree, Inc. Light emitting devices
US9300062B2 (en) 2010-11-22 2016-03-29 Cree, Inc. Attachment devices and methods for light emitting devices
USD702653S1 (en) 2011-10-26 2014-04-15 Cree, Inc. Light emitting device component
JP5887505B2 (en) * 2011-10-19 2016-03-16 パナソニックＩｐマネジメント株式会社 Light emitting device
CN104081112B (en) 2011-11-07 2016-03-16 克利公司 High voltage array light-emitting diode (LED) device, equipment and method
DE102011056700A1 (en) * 2011-12-20 2013-06-20 Osram Opto Semiconductors Gmbh Process for the production of optoelectronic semiconductor components, lead frame composite and optoelectronic semiconductor component
US9735198B2 (en) 2012-03-30 2017-08-15 Cree, Inc. Substrate based light emitter devices, components, and related methods
US10134961B2 (en) 2012-03-30 2018-11-20 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
WO2014109407A1 (en) * 2013-01-11 2014-07-17 大日本印刷株式会社 Hard coat film, curable resin composition for hard coat layers, and method for producing hard coat film
JP2014225520A (en) * 2013-05-15 2014-12-04 東芝ライテック株式会社 Light-emitting module and light device
USD740453S1 (en) 2013-06-27 2015-10-06 Cree, Inc. Light emitter unit
USD739565S1 (en) 2013-06-27 2015-09-22 Cree, Inc. Light emitter unit
JP6519123B2 (en) * 2013-08-30 2019-05-29 日亜化学工業株式会社 Light emitting element mounting substrate and fixing method of the substrate
JP6489305B2 (en) * 2015-03-03 2019-03-27 パナソニックＩｐマネジメント株式会社 Light emitting device, light source for illumination, and inspection method for light emitting device
USD823492S1 (en) 2016-10-04 2018-07-17 Cree, Inc. Light emitting device
US10862276B2 (en) * 2017-08-31 2020-12-08 Nichia Corporation Method of manufacturing light emitting device and light emitting device
JP6822451B2 (en) * 2017-08-31 2021-01-27 日亜化学工業株式会社 Manufacturing method of light emitting device and light emitting device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005123477A (en) * 2003-10-17 2005-05-12 Toyoda Gosei Co Ltd Optical device
WO2007080984A1 (en) * 2006-01-13 2007-07-19 Sharp Kabushiki Kaisha Illumination device and liquid crystal display device
JP2007200577A (en) * 2006-01-23 2007-08-09 Sharp Corp Lighting device and liquid crystal display device
JP2008041290A (en) * 2006-08-02 2008-02-21 Akita Denshi Systems:Kk Lighting device and manufacturing method therefor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05259511A (en) * 1992-03-10 1993-10-08 Ibiden Co Ltd Dot matrix substrate light emitting diode
JP4268563B2 (en) * 2004-05-18 2009-05-27 大日本印刷株式会社 Multilayer wiring board and manufacturing method thereof
JP2006228953A (en) * 2005-02-17 2006-08-31 Three M Innovative Properties Co Surface mounted package
JP5114017B2 (en) * 2006-05-11 2013-01-09 オリンパス株式会社 Semiconductor device and method for manufacturing the same
JP2008140829A (en) * 2006-11-30 2008-06-19 Sharp Corp Semiconductor device and method for manufacturing the same
JP5045166B2 (en) * 2007-03-16 2012-10-10 ソニー株式会社 Light source device and liquid crystal display device
JP2008241561A (en) * 2007-03-28 2008-10-09 Casio Comput Co Ltd Inspecting method of matrix display device
JP4542116B2 (en) * 2007-04-20 2010-09-08 株式会社 日立ディスプレイズ Liquid crystal display

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005123477A (en) * 2003-10-17 2005-05-12 Toyoda Gosei Co Ltd Optical device
WO2007080984A1 (en) * 2006-01-13 2007-07-19 Sharp Kabushiki Kaisha Illumination device and liquid crystal display device
JP2007200577A (en) * 2006-01-23 2007-08-09 Sharp Corp Lighting device and liquid crystal display device
JP2008041290A (en) * 2006-08-02 2008-02-21 Akita Denshi Systems:Kk Lighting device and manufacturing method therefor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012227470A (en) * 2011-04-22 2012-11-15 Citizen Holdings Co Ltd Semiconductor light emitting device and manufacturing method of the same
WO2013092435A1 (en) * 2011-12-22 2013-06-27 Osram Opto Semiconductors Gmbh Connection board, optoelectronic component arrangement, and illumination device
US20140345918A1 (en) * 2011-12-22 2014-11-27 Osram Opto Semiconductors Gmbh Connection board, optoelectronic component arrangement and illumination device
US9521747B2 (en) 2011-12-22 2016-12-13 Osram Opto Semiconductors Gmbh Connection board, optoelectronic component arrangement and illumination device

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