WO2010071131A1 - Appareil d'émission de lumière - Google Patents

Appareil d'émission de lumière Download PDF

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Publication number
WO2010071131A1
WO2010071131A1 PCT/JP2009/070909 JP2009070909W WO2010071131A1 WO 2010071131 A1 WO2010071131 A1 WO 2010071131A1 JP 2009070909 W JP2009070909 W JP 2009070909W WO 2010071131 A1 WO2010071131 A1 WO 2010071131A1
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Prior art keywords
substrate
led chip
emitting device
inspection
light
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PCT/JP2009/070909
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English (en)
Japanese (ja)
Inventor
崇史 藤野
横谷　良二
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パナソニック電工株式会社
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Publication of WO2010071131A1 publication Critical patent/WO2010071131A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0266—Marks, test patterns or identification means
    • H05K1/0268—Marks, test patterns or identification means for electrical inspection or testing
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]

Definitions

  • the present invention relates to a light emitting device using a plurality of LED chips.
  • LEDs Light emitting diodes
  • LEDs have the advantage of being smaller, lighter, and lower power consumption than light bulbs and fluorescent lamps, and are widely used as display light sources, display light sources, and the like.
  • a light-emitting device that emits light with a color different from that of the LED chip, including white light, has been developed. Has been.
  • the LED unit is manufactured, the number of manufacturing steps increases as the number of light emitting devices mounted on the wiring board increases.
  • the light distribution lens and the reflecting mirror provided in the LED unit are increased in size. Therefore, a light-emitting device called a multi-chip LED package in which a plurality of LED chips are mounted on a substrate to increase the light output has been developed.
  • a light emitting device of such a multi-chip LED package for example, as shown in FIG. 10A, a plurality of LED chips 2 (see FIG. 10B) are arranged at the center of the upper surface of the substrate 1 having a rectangular shape in plan view. Is mounted, and a light emitting device 10 is provided in which an optical member 14 covering all of the plurality of LED chips 2 is provided on the upper surface of the substrate 1.
  • a plurality of power supply terminals 31 and 32 electrically connected to the LED chip 2 are exposed around the upper surface of the substrate 1.
  • two sets of power supply terminals 31 and 32 are provided so as to be exposed on the substrate 1 (for example, JP-A-2006-310501). .
  • the light emitting device 10 described in Japanese Patent Laid-Open No. 2006-310501 is provided with a pair of power supply terminals 31 and 32 for each of the plurality of LED chips 2, the light emitting device 10 emits light as shown in FIGS. 10C and 10D.
  • the number of joints increases and the number of man-hours increases.
  • the light-emitting device 10 mounted on the wiring board 35 has the thermal expansion of the substrate 1 of the light-emitting device 10 due to the temperature cycle of the temperature rise and fall associated with turning on and off of the light-emitting device 10. And shrinkage are alternately repeated, and a crack or the like may occur in a joint portion made of solder or the like that joins the power supply terminals 31 and 32 of the light emitting device 10 and the pattern wirings 36 and 36 of the wiring board 35.
  • a plurality of LED chips 2 mounted on the substrate 1 and a plurality of LED chips 2 mounted on the substrate 1 are supplied to the pair of power supply terminals 31 and 32 from the outside, thereby connecting a plurality of units connected in series or in parallel. It is also conceivable to configure the light emitting device 10 that turns on the LED chip 2.
  • the light emitting device 10 is selected as a non-defective product or a defective product by checking the electrical properties of the LED chip 2.
  • probe electrodes for inspection are brought into contact with the power supply terminals 31 and 32 of the light emitting device 10, a reverse voltage is applied to the LED chip 2, and a leakage current flowing at that time is measured to select a deteriorated product. It is common to do.
  • the LED chip 2 having a large leakage current can be detected even if a reverse voltage is applied between the pair of power supply terminals 31 and 32. Therefore, there is a problem that defective products are not sorted out.
  • the leakage current of the light emitting device 10 causes the leakage current of the individual LED chips 2.
  • the total leakage current is detected. Therefore, when the number of individual LED chips 2 connected and the variation value of the leakage current are large (for example, about several nA to several ⁇ A), it is difficult to set a value for determining pass as a non-defective product, and defective products cannot be sufficiently selected. There is.
  • the present invention has been made in view of the above reasons, and its purpose is to reduce man-hours when mounting on a wiring board and to improve bonding reliability, and to improve the quality of defective LED chips and defective products.
  • An object of the present invention is to provide a light emitting device that can be easily selected.
  • the light emitting device includes an electrically insulating substrate on which a plurality of LED chips are mounted on an upper surface, a power line formed on the substrate to connect the plurality of LED chips, and power terminals formed at both ends of the power line. And a pair of inspection lines branched from the power supply line at both ends of each LED chip, and an inspection terminal formed at a point away from the LED chip at one end of each inspection line.
  • the number of power supply terminals to be bonded to the power supply line formed on the substrate can be reduced, the number of steps for mounting on the substrate can be reduced and the bonding reliability can be improved.
  • an inspection terminal for individually checking the electrical properties of each LED chip in a form separate from the power supply terminal it is possible to reduce the man-hours when mounting the light emitting device on the substrate, and to improve the bonding reliability. Improvement can be achieved, and each defective LED chip can be individually inspected, and the defect of the LED chip can be detected more reliably.
  • the inspection terminal can be arranged at an appropriate position away from the LED chip by the inspection line provided to branch from the power supply line, thermal expansion and contraction in the vicinity of the LED chip on the substrate 1 are possible. It is possible to reduce the occurrence of cracks due to alternating between and.
  • the power line, the inspection line, and the inspection terminal are formed on the upper surface of the substrate, and an electrically insulating protective film that covers a part of the power line, the inspection line and the inspection terminal is formed on the upper surface of the substrate, It is preferable that the inspection terminal is exposed through a through hole formed in the protective film.
  • the protective film that protects the pattern wiring can reduce exposure of the pattern wiring, thereby suppressing breakage of the LED chip due to static electricity flowing into the LED chip through the pattern wiring. Furthermore, a highly reliable light-emitting device can be provided by suppressing deterioration of the pattern wiring by this protective film.
  • the through hole for exposing the inspection terminal is formed in the protective film, the movement of the probe electrode on the substrate can be restricted and the probe electrode can be prevented from slipping from the inspection terminal.
  • the through hole is formed in a tapered shape so that its cross-sectional area increases as the distance from the substrate increases.
  • This configuration makes it easier to position the probe electrode for inspection.
  • the power line includes a series connection segment that connects two adjacent LED chips connected in series, and one LED chip is mounted on one end of each series connection segment.
  • a pad that is in electrical contact with the electrode on the lower surface of the LED chip is formed, and a land that is bonded to the other electrode of the other LED chip via the wire on the upper surface of the other LED chip is formed.
  • This configuration simplifies the process of mounting the pattern wiring on the substrate and improves the bonding reliability. In addition, it is possible to individually check the electrical properties of each LED chip while reducing the total area of the pattern wiring provided on the substrate.
  • a sealing portion that covers a plurality of LED chips is provided, and this sealing portion covers all of the pads and lands, and part of the power supply line and the inspection line, and is covered with the sealing portion. It is preferable that the power supply line and the inspection line other than the portion are configured to be covered with a protective film. Accordingly, the LED chip can be mounted, the serial connection segment via the wire and the LED chip can be connected, and the power supply line and the inspection line other than the portion covered with the sealing portion can be protected from the outside.
  • FIG. 3 is a plan view illustrating a part of the light emitting device according to the first embodiment.
  • the schematic circuit diagram in the serial connection same as the above is shown.
  • the schematic circuit diagram in the series-parallel connection same as the above is shown.
  • It is a top view of another structure same as the above.
  • It is a schematic sectional drawing of another structure same as the above.
  • the structure of the main part is shown.
  • It is sectional drawing which shows another structure same as the above.
  • 6 which shows another structure same as the above.
  • 6 is a plan view of a light emitting device according to Embodiment 2.
  • FIG. 6 is a schematic cross-sectional view of a light emitting device according to Embodiment 2.
  • FIG. 1 is a plan view of a light emitting device according to Embodiment
  • FIG. 3 It is sectional drawing which shows the light-emitting device of Embodiment 3.
  • the top view of the conventional light-emitting device is shown.
  • the circuit diagram of the conventional light-emitting device is shown.
  • the wiring board of the conventional light-emitting device is shown. Sectional drawing when the conventional light-emitting device is mounted in a wiring board is shown.
  • the light emitting device 10 of the present embodiment is formed on the substrate 1, a flat electrically insulating substrate 1 having a rectangular shape in plan view, a plurality of LED chips 2 mounted in the center of the substrate 1, and the substrate 1.
  • a power line 37 that connects a plurality of LED chips, and power terminals 31 and 32 that are formed at both ends of the power line 37 and supply electricity to the LED chip 2.
  • a concave portion for accommodating a plurality of LED chips 2 is provided on the bottom surface of the top surface of the substrate 1 of the light emitting device, and a convex lens-like optical member 14 having a circular shape in plan view, and in the concave portion of the optical member 14.
  • the sealing portion 15 filled so as to cover the plurality of LED chips 2 and the color conversion member 17 that covers the optical member 14 via the air layer 19 are disposed (see FIG. 3B).
  • the air layer 19 between the optical member 14 and the color conversion member 17 enhances the light extraction efficiency from the light emitting device 10.
  • a pair of inspection lines 38 are formed so as to branch from the power supply line 37 at both ends of each LED chip 2, and at one end of each inspection line 38.
  • the inspection terminal 4 is formed so as to be away from the LED chip 2.
  • an electrically insulating protective film 13 is formed so as to cover a part of the power line 37, the inspection line 38, and the inspection terminal 4.
  • the protective film 13 is formed with a plurality of through holes 16 for exposing the inspection terminals 4 individually.
  • FIG. 1 A part of the light emitting device 10 of the present embodiment is shown in FIG.
  • a plurality of LED chips 2 are mounted on the upper surface of the substrate 1 shown in FIG. 1, power supply terminals 31 and 32 for supplying power to the plurality of LED chips 2, and electrical properties of each LED chip 2.
  • a pair of inspection terminals 4 for individually inspecting are formed.
  • the substrate 1 is formed in a flat plate shape by a thin plate made of, for example, a single layer or a multilayer alumina ceramic.
  • a power line 37 made of a metal thin film (for example, an Au film or a Cu film) and connecting a plurality of LED chips 2 is formed on the upper surface of the substrate 1.
  • the power supply line 37 on the substrate 1 is provided with a pair of power supply terminals 31, 32, 15 LED chips 2, and 14 serial connection segments 33 that connect the LED chips 2 in series.
  • the pair of power supply terminals 31 and 32 are provided to supply electricity to the plurality of LED chips 2.
  • One power supply terminal 31 is provided with a land 6 to which a metal wire 7 made of, for example, a gold wire or an aluminum wire is bonded, and an inspection terminal 4 used for checking the electrical properties of the LED chip 2.
  • the other power supply terminal 32 includes a pad 5 on which the LED chip 2 is mounted and an inspection terminal 4 used for checking the electrical properties of the LED chip 2.
  • the series connection segments 33 are connected in series between the adjacent LED chips 2, and a plurality of series connection segments 33 are provided on the substrate 1 as desired.
  • the serial connection segment 33 has a pad 5 on one end of which the LED chip 2 is mounted and which is in electrical contact with the electrode on the lower surface of the LED chip 2.
  • the land 6 is bonded to the electrode on the upper surface of the LED chip 2 via the metal wire 7.
  • An inspection line 38 extending one by one for each series connection segment 33 connects the inspection terminal 4 used for inspection of the electrical properties of the LED chip 2 mounted on the pad 5 to the series connection segment 33.
  • the arrangement of the pad 5, the land 6 and the inspection terminal 4 of the serial connection segment 33 is appropriately determined according to the arrangement of the LED chip 2 on the substrate 1.
  • two wires are extended from the pad 5 of the serial connection segment 33, and a land 6 bonded to the LED chip 2 via a metal wire 7 is provided at the tip of one wire, and at the tip of the other wire.
  • the inspection terminal 4 is provided at a point away from the center of the substrate 1. Further, the inspection terminal 4 is provided at the tip of the wiring extending from the pad 5 of the series connection segment 33, and another wiring is provided in a form branched from the wiring between the pad 5 and the inspection terminal 4, and the wiring A land 6 can also be formed at the tip of each of them. Furthermore, the inspection terminal 4 can be arranged at the tip of the wiring extending from the pad 5 of the serial connection segment 33, and a part of the wiring width between the pad 5 and the inspection terminal 4 can be widened to be the land 6.
  • the LED chip 2 used in the light emitting device 10 of this embodiment has a pair of electrodes formed on both sides in the thickness direction, and one electrode (for example, a cathode) is made of AuSn or Ag paste on the pad 5.
  • the junction 8 can be used for electrical connection by die-bonding, and the other electrode (for example, anode) can be electrically connected to the land 6 via the metal wire 7.
  • the LED chip 2 can use various compound semiconductors depending on the desired light color radiated from the light emitting device 10, but when used for illumination, the fluorescent light contained in the color conversion member 17 to obtain white light.
  • a high-power LED chip 2 using a GaN-based compound semiconductor that can efficiently excite the body is preferable.
  • the GaN-based compound semiconductor is formed on an insulating substrate such as a sapphire substrate or a spinel substrate, or on a conductive substrate such as an SiC substrate or a GaN substrate by MOCVD.
  • a conductive substrate is used as the crystal growth substrate of the LED chip 2
  • the conductive substrate and the pad 5 are bonded using the bonding portion 8 made of Ag paste, AuSn, or the like as described above.
  • the LED chip 2 is flip-chip mounted, or the insulating substrate is fixed to the pad 5 with an epoxy resin or the like. In either case, the LED chip 2 is preferably fixed at the joint 8 having high heat dissipation.
  • a pair of electrodes provided on the front surface side of the LED chip 2 are bonded to the land 6 by a metal wire 7 or the like to be electrically connected. can do.
  • the LED chip 2 can be formed by bonding a support substrate such as Si after crystal growth and then peeling off the crystal growth substrate such as a sapphire substrate, and an LED using a conductive substrate as the crystal growth substrate. It can be handled in the same manner as the chip 2.
  • the pads 5 and lands 6 such as the series connection segments 33 are provided densely at the center of the substrate 1, and the inspection terminals 4 are
  • the substrate 1 is preferably provided so as to be away from the center.
  • the inspection terminals 4 arranged on the periphery of the substrate 1 are arranged in a zigzag parallel to one side of the flat substrate 1.
  • the pair of power supply terminals 31 and 32 are arranged at one corner of the four corners of the flat substrate 1 so as not to interfere with the optical member 14 and the color conversion member 17 covering the plurality of LED chips 2. It is preferred that
  • FIG. 2A a schematic circuit diagram of the light emitting device 10 of the present embodiment is shown in FIG. 2A.
  • a plurality of LED chips 2 are connected in series, and a pair of power supply terminals 31 and 32 for supplying electricity to light the LED chips 2 are provided at both ends of the LED chips 2. It is connected.
  • a direct connection segment 33 for connecting in series is provided between the LED chips 2, and the series connection segment 33 has an inspection terminal 4 used for inspection of the electrical properties of each LED chip 2 at one end.
  • Each line is provided with a single branch.
  • the circuit of FIG. 2A in which a plurality of LED chips 2 are connected in series may be one, and may be plural if the junction reliability is not lowered by the number of junctions between the power supply line 37 and the power supply terminals 31 and 32. Furthermore, a circuit in which a plurality of LED chips 2 connected in series as shown in FIG. 2B are connected in parallel may be adopted. Even in this case, when a forward voltage is applied between the pair of power supply terminals 31 and 32, a plurality of LED chips 2 are lit simultaneously through the current flowing through the series connection segments 33.
  • the inspection terminals 4 provided separately from the pair of power supply terminals 31 and 32 can individually inspect the electrical properties of the LED chips 2.
  • FIG. 5 shows a cross-sectional view of the light emitting device 10 in a state where the optical member 14, the sealing portion 15, and the protective film 13 are provided on the substrate 1 shown in FIG.
  • the LED chip 2 is mounted in the center (mounting area) on the substrate 1, and a protective film 13 (for example, a glass film) is formed on the substrate 1 on both sides of the mounting area. Further, on the mounting area, a convex lens-shaped optical member 14 that condenses the light from the LED chip 2 is provided, and the LED chip 2 is sealed in a recess provided on the bottom surface of the cover of the optical member 14. The sealing part 15 is filled and arranged.
  • a protective film 13 for example, a glass film
  • the protective film 13 formed on the substrate 1 will be described.
  • the power supply terminals 31 and 32 disposed at one corner of the four corners of the flat substrate 1, the inspection terminal 4 formed away from the center of the substrate 1, and the mounting area are excluded.
  • a protective film 13 is formed (see FIGS. 1 and 3A).
  • a through hole 16 penetrating in the thickness direction of the protective film 13 is formed on the power supply terminals 31, 32 and the inspection terminal 4 that is electrically connected to each LED chip 2.
  • a plurality of LED chips 2, pads 5, and lands 6 that are turned on when current is supplied from a pair of power supply terminals 31 and 32 are arranged.
  • the possibility of damaging the LED chip 2 due to the flow of static electricity can be reduced (See FIG. 3A).
  • an inorganic material such as glass or ceramic as the material of the protective film 13, it is possible to suppress deterioration of the power supply line 37 and the inspection line 38 due to moisture, oxidation, sulfurization, etc.
  • a high light emitting device 10 can be obtained.
  • each LED chip 2 is individually inspected by inserting a probe electrode 20 for inspection into a through hole 16 penetrating the protective film 13 and making contact with the inspection terminal 4 on the substrate 1. be able to.
  • a probe electrode 20 for inspection into a through hole 16 penetrating the protective film 13 and making contact with the inspection terminal 4 on the substrate 1.
  • the optical member 14 is formed in a convex lens shape having a circular shape in plan view in order to protect the LED chip 2 from the outside and condense light from the LED chip 2.
  • a material of the optical member 14 for example, an organic material such as a translucent silicone resin, an acrylic resin, or an epoxy resin, or an inorganic material such as glass can be used.
  • a concave portion is suitably provided on the bottom surface of the optical member 14 formed in a convex lens shape, and the concave portion can be filled with a translucent resin as the sealing portion 15. In this case, the mounting area in which the LED chip 2, the pad 5, and the land 6 on the substrate 1 are disposed is accommodated in the recess of the optical member 14.
  • the sealing portion 15 has a refractive index of the cover in order to increase the light extraction efficiency from the LED chip 2. It is preferable to use a translucent material having the above refractive index. Furthermore, when the sealing part 15 is made of a gel-like resin, disconnection of the metal wire 7 can be prevented from thermal stress caused by heat generation or cooling of the LED chip 2 in the recess of the optical member 14. As a material for such a sealing portion 15, for example, gel-like silicone is preferably exemplified.
  • uncured gel-like silicone which is a material for the sealing portion 15 is filled in the recess provided on the bottom surface of the optical member 14, and the substrate is placed on the optical member 14. With the 1 turned over, the optical member 14 is positioned and fitted to the substrate 1.
  • the light emitting device 10 can be formed by curing the gel-like silicone.
  • FIG. 4 the optical member 14 and the color conversion member 17 on the optical member 14 are shown from the bottom surface side (engagement surface with the substrate 1). There is a recess in the center of the bottom surface of the optical member 14 where the sealing portion 15 is suitably formed.
  • the bottom surface of the optical member 14 is provided with a pair of first stepped portions 14d and 14d and a second stepped portion 14f deeper than the paired first stepped portions 14d and 14d, and projects inward from the first stepped portion 14d. Projections 14e, 14e are formed.
  • the first step portions 14 d and 14 d of the optical member 14 are fitted with the protective film 13 on the substrate 1, and the protrusions 14 e and 14 e of the optical member 14 are formed by notching the notches 1 e and 1 e provided at the center of the substrate 1. It can be fitted and locked.
  • the second stepped portion 14f is provided with a groove portion 14b that can be fitted with the protective film 13 on the substrate 1.
  • the color conversion member 17 covers the optical member 14 and can radiate by converting at least a part of the wavelength from the LED chip 2.
  • the color conversion member 17 is formed in a circular shape whose plan view is larger than that of the optical member 14, and part of the color conversion member 17 protrudes from the end of the substrate 1 (see FIG. 3A).
  • the cross-sectional view of the color conversion member 17 has a convex shape and a concave portion that can accommodate the optical member 14 therein (see FIG. 3B).
  • a translucent material for example, silicone resin
  • a phosphor for example, from the LED chip 2 that converts the wavelength emitted from the LED chip 2 into light having a longer wavelength.
  • the phosphor that absorbs blue light and emits a yellow wavelength can be included.
  • the LED chip 2 emits blue light, and the blue light from the LED chip 2 and the yellow light emitted from the phosphor are emitted through the light exit surface of the color conversion member 17.
  • White light can be obtained from the light emitting device 10.
  • the translucent material of the color conversion member 17 is not limited to a silicone resin.
  • a hybrid material or the like may be used.
  • phosphors contained in the color conversion member 17 for example, when emitting blue light from the LED chip 2, phosphors capable of emitting green and red as well as phosphors emitting yellow light. Can be used to obtain white light from the light emitting device 10.
  • the phosphor can be variously selected according to the wavelength (for example, ultraviolet rays) emitted from the LED chip 2 such as a phosphor capable of emitting blue, green, red and white, and the target color to be obtained.
  • Such a portion overlapping the substrate 1 in the center of the lower surface of the color conversion member 17 can be fixed with an adhesive (for example, epoxy resin).
  • the substrate 1 used in the light emitting device 10 of the present embodiment is fixed to be fixed to a housing of a lighting fixture or the like at a pair of diagonal corners among four corners having a rectangular shape in plan view.
  • a screw fixing notch 1f for a screw (not shown) is suitably formed.
  • notches 1e are suitably formed on both side surfaces in the longitudinal direction of the substrate 1, and the notches 1e project from the first step portions 14d and 14d of the optical member 14 so as to approach each other.
  • the protrusions 14e and 14e can be engaged.
  • the pair of power supply terminals 31 and 32 are not necessarily provided on the upper surface of the substrate 1 on which the LED chip 2 is arranged as illustrated in the cross-sectional view of the light emitting device 10 in FIG.
  • the substrate 1 is formed of a ceramic substrate
  • the same pattern wiring as described above is formed on the upper surface of the ceramic substrate without forming the pair of power supply terminals 31 and 32.
  • the LED chip 2 is die-bonded to the pad 5 of the series connection segment 33 by, for example, a bonding portion 8 made of gold tin, and electrically connected to one electrode (not shown) of the LED chip 2.
  • the other electrode (not shown) of the LED chip 2 and the land 6 connected to the other wiring 34 are bonded to each other by a metal wire 7.
  • vias 9 and 9 are embedded in the thickness direction of the substrate 1, and the wiring 34 formed on the upper surface of the substrate 1 and the wiring formed on the lower surface of the substrate 1 are connected via the vias 9 and 9.
  • the wiring formed on the lower surface of the substrate 1 functions as the power supply terminals 31 and 32.
  • the substrate 1 is not limited to a ceramic substrate, and a resin substrate (for example, a highly insulating glass epoxy resin substrate or a heat-resistant liquid crystal polymer substrate) on which pattern wiring can be formed on the surface can also be used.
  • the pattern wiring for electrically connecting the LED chip 2 can be formed by laminating a metal thin film on a resin substrate and then etching to form a desired pattern.
  • the substrate 1 efficiently releases the heat generated in the LED chip 2 to the outside.
  • an AlN film is formed on a metal substrate 11 made of an aluminum substrate.
  • a metal base substrate on which pattern wirings are formed through the insulating layer 12 may be used.
  • the pattern wiring is provided on the insulating layer 12 and functions as a pair of power supply terminals 31 and 32 and a series connection segment 33.
  • the LED chip 2 is placed by, for example, a joint 8 made of solder, and is joined to one electrode of the LED chip 2.
  • the other electrode of the LED chip 2 is bonded to the land 6 formed at the tip of the wiring extending from the one power supply terminal 31 by the metal wire 7.
  • the pattern wiring formed on the insulating layer 12 can be formed in a pattern similar to that shown in FIG. 1 in plan view, and a power supply for supplying power to the plurality of LED chips 2 on the substrate 1.
  • an inspection terminal 4 for individually checking the electrical properties of each LED chip 2 is provided (not shown).
  • Embodiment 2 The basic configuration of the light emitting device 10 of the present embodiment is substantially the same as that of the first embodiment, and the flow of excess adhesive that occurs during the manufacture of the light emitting device 10 on the protective film 13 that protects the pattern wiring formed on the substrate 1. The difference is that a dam portion 18 for damming is provided.
  • symbol is attached
  • the protruding adhesive flows to the short side of the rectangular substrate 1 from the edge of the color conversion member 17 having a circular shape in plan view, and is provided to expose the power supply terminals 31 and 32 and the inspection terminal 4.
  • the through hole 16 of the protective film 13 may be blocked.
  • the uncured resin that protrudes may block the through hole 16 of the protective film 13 provided to expose the power supply terminals 31 and 32 and the inspection terminal 4.
  • the dam portion 18 can be provided so as to protrude on the protective film 13 so that an excessive amount of an adhesive or the like does not protrude onto the through hole 16 provided in the protective film 13.
  • the dam part 18 removes an excess of an adhesive or the like that tends to flow from the edge of the color conversion member 17 to the short side of the rectangular substrate 1 along the edge of the color conversion member 17 having a circular shape in plan view. It is configured as a dam.
  • Such a dam portion 18 can be formed by providing a glass film again on the protective film 13 when the protective film 13 is formed of glass.
  • the dam portion 18 made of ceramic can be integrally formed with the substrate 1.
  • the dam portion 18 formed on the substrate 1 not only protects the surplus portion of the adhesive or the like from protruding over the through hole 16 penetrating the protective film 13 but also the optical member 14 and the color conversion member 17. It is also possible to have an effect that the positioning can be easily performed.
  • the basic configuration of the light emitting device 10 of the present embodiment is substantially the same as that of the first embodiment, except that the shape of the through hole 16 penetrating the protective film 13 is changed.
  • symbol is attached
  • the through hole 16 provided in the substrate 1 in the light emitting device 10 of the present embodiment is formed in a tapered shape, and the sectional area of the through hole 16 is the substrate 1. It is formed so that it becomes large as it leaves.
  • the through-hole 16 in the light emitting device 10 of the present embodiment has such a tapered shape, so that the probe electrode 20 for inspection can be easily positioned.

Abstract

La présente invention a trait à un appareil d'émission de lumière qui permet de réduire le nombre d'étapes lors de la réalisation du montage secondaire sur une carte de circuit imprimé ainsi que d'améliorer la fiabilité de la connexion ; ledit appareil d'émission de lumière permet également de faciliter la vérification d'une pluralité de puces à diode électroluminescente afin de déterminer s'il s'agit de bonnes ou de mauvaises puces à diode électroluminescente. L'appareil d'émission de lumière (10) inclut une carte (1) et une pluralité de puces à diode électroluminescente (2) montée sur la surface supérieure de la carte (1). Une paire de bornes d'alimentation (31, 32) permettant de fournir de l'énergie aux puces à diode électroluminescente (2) et des bornes de contrôle (4) au moyen desquelles les propriétés électriques de chaque puce à diode électroluminescente (2) peuvent être contrôlées sont disposées sur la carte (1).
PCT/JP2009/070909 2008-12-17 2009-12-15 Appareil d'émission de lumière WO2010071131A1 (fr)

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JP2008-321508 2008-12-17
JP2008321508A JP5379465B2 (ja) 2008-12-17 2008-12-17 発光装置

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