JP5730711B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP5730711B2 JP5730711B2 JP2011183773A JP2011183773A JP5730711B2 JP 5730711 B2 JP5730711 B2 JP 5730711B2 JP 2011183773 A JP2011183773 A JP 2011183773A JP 2011183773 A JP2011183773 A JP 2011183773A JP 5730711 B2 JP5730711 B2 JP 5730711B2
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- light emitting
- emitting device
- light
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45169—Platinum (Pt) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Description
シリコーンゴムシート、92 貫通孔。
Claims (8)
- 熱伝導性の高い絶縁基板上に1つの発光部が設けられると共に、該発光部を取り囲む領域を有しており、前記熱伝導性の高い絶縁基板上に正電極外部接続ランドおよび負電極外部接続ランドが設けられた発光装置であって、
前記熱伝導性の高い絶縁基板の形状は、四角またはその頂点の角を取った略四角形であり、
前記熱伝導性の高い絶縁基板上に複数の配線パターンが直接形成され、
当該配線パターンは、前記正電極外部接続ランドと電気的に接続されたアノード用配線パターンと前記負電極外部接続ランドと電気的に接続されたカソード用配線パターンを含み、
前記発光部は、複数個の半導体発光素子が前記熱伝導性の高い絶縁基板に接着され、前記複数個の半導体発光素子が1つの封止体で封止されたものであり、
前記封止体の上面形状は円形状であり、前記四角またはその頂点の角を取った略四角形の絶縁基板の中央部に前記円形状の封止体を設け、
前記発光部を取り囲む領域は、前記封止体で封止されていない領域であり、
前記封止体で封止されていない領域は、前記基板の角部において広くなっている領域を有し、
前記半導体発光素子は、半導体LEDチップであり、
前記正電極外部接続ランドおよび前記負電極外部接続ランドは、前記封止体で封止されていない領域における前記基板の角部において広くなっている領域に、前記発光部を挟むように対向して設けられている、発光装置。 - 前記半導体発光素子同士が直列に電気的に接続されている、請求項1に記載の発光装置。
- 前記半導体発光素子同士が並列に電気的に接続されている、請求項1に記載の発光装置。
- 前記配線パターンが、前記半導体発光素子との間の電気的接続の位置決め用のパターン、または、前記半導体発光素子の搭載位置の目安用のパターンをさらに有する、請求項1〜3のいずれかに記載の発光装置。
- 前記熱伝導性の高い絶縁基板が白色のセラミック基板である、請求項1〜4のいずれかに記載の発光装置。
- 前記白色のセラミック基板が、酸化アルミニウム、窒化アルミニウム、ボロンナイトライド、窒化ケイ素、酸化マグネシウム、フォルステライト、ステアタイト、低温焼結セラミックから選ばれるいずれか、または、これらの複合材料で形成されている、請求項5に記載の発光装置。
- 前記封止体が蛍光体を含有し、前記発光装置が所望の色度の発光をする、請求項1〜6のいずれかに記載の発光装置。
- 液晶ディスプレイのバックライト光源または照明用光源として用いられるものである、請求項1〜7のいずれかに記載の発光装置。
Priority Applications (1)
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JP2011183773A JP5730711B2 (ja) | 2011-08-25 | 2011-08-25 | 発光装置 |
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JP2011183773A JP5730711B2 (ja) | 2011-08-25 | 2011-08-25 | 発光装置 |
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JP2010129024A Division JP5442534B2 (ja) | 2010-06-04 | 2010-06-04 | 発光装置 |
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JP2014136034A Division JP5829316B2 (ja) | 2014-07-01 | 2014-07-01 | 発光装置およびその製造方法 |
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JP2012009886A JP2012009886A (ja) | 2012-01-12 |
JP5730711B2 true JP5730711B2 (ja) | 2015-06-10 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4753904B2 (ja) | 2007-03-15 | 2011-08-24 | シャープ株式会社 | 発光装置 |
JP5985201B2 (ja) | 2012-02-20 | 2016-09-06 | シャープ株式会社 | 発光装置および照明装置 |
CN103855142B (zh) | 2012-12-04 | 2017-12-29 | 东芝照明技术株式会社 | 发光装置及照明装置 |
JP2014192252A (ja) * | 2013-03-26 | 2014-10-06 | Toyoda Gosei Co Ltd | Led発光装置 |
WO2015027180A1 (en) | 2013-08-23 | 2015-02-26 | Molex Incorporated | Led module |
Family Cites Families (7)
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JPH07250207A (ja) * | 1994-03-08 | 1995-09-26 | Nikon Corp | 画像読取装置 |
JP4190095B2 (ja) * | 1999-07-29 | 2008-12-03 | 三洋電機株式会社 | 混成集積回路装置 |
JP4905751B2 (ja) * | 2001-05-17 | 2012-03-28 | 株式会社吉田製作所 | 歯科用光照射器 |
JP2004103266A (ja) * | 2002-09-05 | 2004-04-02 | Nep Kk | 照明装置および照明光の調整方法 |
JP2004172586A (ja) * | 2002-11-07 | 2004-06-17 | Matsushita Electric Ind Co Ltd | Led照明光源 |
JP2005252222A (ja) * | 2004-02-03 | 2005-09-15 | Matsushita Electric Ind Co Ltd | 半導体発光装置、照明モジュール、照明装置、表示素子、および半導体発光装置の製造方法 |
JP2006156837A (ja) * | 2004-11-30 | 2006-06-15 | Matsushita Electric Ind Co Ltd | 半導体発光装置、発光モジュール、および照明装置 |
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