JP5442534B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP5442534B2 JP5442534B2 JP2010129024A JP2010129024A JP5442534B2 JP 5442534 B2 JP5442534 B2 JP 5442534B2 JP 2010129024 A JP2010129024 A JP 2010129024A JP 2010129024 A JP2010129024 A JP 2010129024A JP 5442534 B2 JP5442534 B2 JP 5442534B2
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- light emitting
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45169—Platinum (Pt) as principal constituent
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Description
本発明の発光装置において、前記基板は正方形状、長方形状または六角形状であって、前記封止体で封止されていない領域における前記基板の対向する角部近傍にそれぞれ前記固定用穴が形成されたことが好ましい。
Claims (11)
- 角部を有する基板上に、複数個の発光素子が搭載されるとともに、複数の配線パターン、正電極外部接続ランドおよび負電極外部接続ランドを備え、
前記発光素子は、半導体LEDチップであり、
前記配線パターンは、アノード用配線パターンと、カソード用配線パターンとを備え、
前記正電極外部接続ランドおよび負電極外部接続ランドは、外部接続配線を直接接続するためのものであって、
前記基板上で、前記複数個の発光素子が1つの封止体で封止された発光部を備え、
前記発光部と前記基板の端の間に前記封止体で封止されていない領域を備え、
前記正電極外部接続ランドおよび負電極外部接続ランドは、前記封止体で封止されていない領域において、前記基板の端と前記発光部に接しないように、前記基板の対向する角部を結ぶ第1の対角線上に前記発光部を挟んで配置されており、
前記封止体で封止されていない領域における前記正電極外部接続ランドおよび前記負電極外部接続ランドと離間した位置に、2つの固定用穴が前記基板の他の2つの対向する角部を結ぶ第2の対角線上に前記発光部を挟んで対向するように形成されたことを特徴とする発光装置。 - 前記正電極外部接続ランドは前記アノード用配線パターンに、前記負電極外部接続ランドは前記カソード用配線パターンに、前記基板上の外部引き出し配線パターンを通じてそれぞれ接続されていることを特徴とする請求項1に記載の発光装置。
- 前記基板の前記封止体で封止されていない領域に外部配線用穴が形成されたことを特徴とする請求項1または2に記載の発光装置。
- 前記外部配線用穴は、切り欠け状であることを特徴とする請求項3に記載の発光装置。
- 前記固定用穴は、切り欠け状であることを特徴とする請求項1〜4のいずれかに記載の発光装置。
- 前記基板が正方形状、長方形状または六角形状である、請求項1〜5のいずれかに記載の発光装置。
- 前記複数の発光素子同士は、直列に電気的に接続されている、請求項1〜6のいずれかに記載の発光装置。
- 前記基板は、少なくともその表面が絶縁性を有する白色の材料で形成されている、請求項1〜7のいずれかに記載の発光装置。
- 前記基板はセラミック基板である、請求項8に記載の発光装置。
- 前記発光部は円形状である、請求項1に記載の発光装置。
- 請求項1に記載の発光装置を前記固定用穴に挿入されるネジによって搭載相手部材に固定されて形成された光源部を有することを特徴とする液晶ディスプレイのバックライトまたは電球型LEDランプ若しくは蛍光灯型LEDランプ。
Priority Applications (1)
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JP2010129024A JP5442534B2 (ja) | 2010-06-04 | 2010-06-04 | 発光装置 |
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JP2010129024A JP5442534B2 (ja) | 2010-06-04 | 2010-06-04 | 発光装置 |
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JP2009211855A Division JP5118110B2 (ja) | 2009-09-14 | 2009-09-14 | 発光装置 |
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JP2011183773A Division JP5730711B2 (ja) | 2011-08-25 | 2011-08-25 | 発光装置 |
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JP2010251775A JP2010251775A (ja) | 2010-11-04 |
JP5442534B2 true JP5442534B2 (ja) | 2014-03-12 |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4753904B2 (ja) | 2007-03-15 | 2011-08-24 | シャープ株式会社 | 発光装置 |
JP6008268B2 (ja) * | 2011-08-23 | 2016-10-19 | パナソニックIpマネジメント株式会社 | Ledユニットおよびそれを用いた照明器具 |
CN102954401B (zh) | 2011-08-23 | 2015-01-14 | 松下电器产业株式会社 | Led单元以及使用该led单元的照明装置 |
KR101277319B1 (ko) | 2012-01-27 | 2013-06-20 | 금호전기주식회사 | 씨오비형 엘이디 패키지와 씨오비형 엘이디 패키지 설치방법 |
JP5985201B2 (ja) | 2012-02-20 | 2016-09-06 | シャープ株式会社 | 発光装置および照明装置 |
JPWO2014013671A1 (ja) * | 2012-07-17 | 2016-06-30 | パナソニック株式会社 | 電球形ランプ及び照明装置 |
JP5210452B2 (ja) * | 2012-11-16 | 2013-06-12 | パナソニック株式会社 | Ledユニットおよびそれを用いた照明器具 |
JP5210454B2 (ja) * | 2012-11-16 | 2013-06-12 | パナソニック株式会社 | Ledユニットおよびそれを用いた照明器具 |
JP5210453B2 (ja) * | 2012-11-16 | 2013-06-12 | パナソニック株式会社 | Ledユニットおよびそれを用いた照明器具 |
JP6214151B2 (ja) * | 2012-11-22 | 2017-10-18 | 株式会社エンプラス | 照明装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2555493Y2 (ja) * | 1992-01-20 | 1997-11-26 | 株式会社小糸製作所 | 車輌用灯具 |
CN100547282C (zh) * | 2002-04-25 | 2009-10-07 | 林原 | 可挠性发光体装置及其制造方法 |
US7224000B2 (en) * | 2002-08-30 | 2007-05-29 | Lumination, Llc | Light emitting diode component |
JP2004200537A (ja) * | 2002-12-20 | 2004-07-15 | Hiroshi Ninomiya | 面発光板体 |
JP2004265724A (ja) * | 2003-02-28 | 2004-09-24 | Toshiba Lighting & Technology Corp | 照明器具 |
JP4241658B2 (ja) * | 2005-04-14 | 2009-03-18 | シチズン電子株式会社 | 発光ダイオード光源ユニット及びそれを用いて形成した発光ダイオード光源 |
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