JP5980860B2 - Ledランプ - Google Patents
Ledランプ Download PDFInfo
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- JP5980860B2 JP5980860B2 JP2014175806A JP2014175806A JP5980860B2 JP 5980860 B2 JP5980860 B2 JP 5980860B2 JP 2014175806 A JP2014175806 A JP 2014175806A JP 2014175806 A JP2014175806 A JP 2014175806A JP 5980860 B2 JP5980860 B2 JP 5980860B2
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- light emitting
- wiring pattern
- emitting device
- sealing body
- light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45169—Platinum (Pt) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Description
シリコーンゴムシート、92 貫通孔。
Claims (7)
- 発光装置を照明用光源として用いたLEDランプであって、
前記発光装置は、基板上面に、複数個の半導体発光素子が搭載されるとともに、配線パターンを備え、
前記配線パターンは、アノード用配線パターンと、カソード用配線パターンとを備え、
前記配線パターンの間に、それぞれ複数個の前記半導体発光素子が搭載され、
前記基板上面で、複数の列からなる前記半導体発光素子および前記配線パターンが1つの封止体で封止された発光部を備え、
前記基板は、該基板上面に、前記発光部の周囲全体を取り囲む、前記封止体で封止されていない領域を備えており、該領域は、外部接続配線を直接接続するための正電極外部接続ランドおよび負電極外部接続ランドが設けられる広さを有し、
前記正電極外部接続ランドおよび前記負電極外部接続ランドは、前記発光部と重複しないように配置され、かつ、前記発光部を挟んで対向して設けられ、
前記正電極外部接続ランドは前記アノード用配線パターンに、前記負電極外部接続ランドは前記カソード用配線パターンに、前記基板上面に形成され、前記正電極外部接続ランドおよび前記負電極外部接続ランドよりも幅の小さい外部引き出し配線パターンを通じてそれぞれ接続されており、
前記外部引き出し配線パターンは前記基板上に段差を有し、前記外部引き出し配線パターンの前記アノード用配線パターンおよびカソード用配線パターンに近い部分は前記封止体で封止されており、前記正電極外部接続ランドおよび前記負電極外部接続ランドに近い部分は封止体で封止されていないことを特徴とするLEDランプ。 - 前記アノード用配線パターン、前記カソード用配線パターン、前記外部引き出し配線パターンの厚みは、前記半導体発光素子の厚みより薄いことを特徴とする請求項1に記載のLEDランプ。
- 前記配線パターンは、前記アノード用、カソード用以外の配線パターンをさらに備えることを特徴とする請求項1または2に記載のLEDランプ。
- 前記配線パターンが、前記半導体発光素子との間の電気的接続の位置決め用のパターン、または、前記半導体発光素子の搭載位置の目安用のパターンをさらに有することを特徴とする請求項1〜3のいずれか1項に記載のLEDランプ。
- 前記基板が絶縁基板であることを特徴とする請求項1〜4のいずれか1項に記載のLEDランプ。
- 前記絶縁基板が白色のセラミック基板であることを特徴とする請求項5に記載のLEDランプ。
- 前記半導体発光素子は、前記基板上面に直に搭載された半導体LEDチップであることを特徴とする請求項1に記載のLEDランプ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014175806A JP5980860B2 (ja) | 2014-08-29 | 2014-08-29 | Ledランプ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2014175806A JP5980860B2 (ja) | 2014-08-29 | 2014-08-29 | Ledランプ |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014136034A Division JP5829316B2 (ja) | 2014-07-01 | 2014-07-01 | 発光装置およびその製造方法 |
Publications (2)
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JP2014225705A JP2014225705A (ja) | 2014-12-04 |
JP5980860B2 true JP5980860B2 (ja) | 2016-08-31 |
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JP2014175806A Active JP5980860B2 (ja) | 2014-08-29 | 2014-08-29 | Ledランプ |
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JP (1) | JP5980860B2 (ja) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4356383B2 (ja) * | 2003-07-03 | 2009-11-04 | パナソニック電工株式会社 | 発光装置の製造方法 |
JP4438492B2 (ja) * | 2003-09-11 | 2010-03-24 | 日亜化学工業株式会社 | 半導体装置およびその製造方法 |
JP2006173326A (ja) * | 2004-12-15 | 2006-06-29 | Nippon Leiz Co Ltd | 光源装置 |
JP4241658B2 (ja) * | 2005-04-14 | 2009-03-18 | シチズン電子株式会社 | 発光ダイオード光源ユニット及びそれを用いて形成した発光ダイオード光源 |
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