JP6030193B2 - 発光装置用基板 - Google Patents
発光装置用基板 Download PDFInfo
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- JP6030193B2 JP6030193B2 JP2015145559A JP2015145559A JP6030193B2 JP 6030193 B2 JP6030193 B2 JP 6030193B2 JP 2015145559 A JP2015145559 A JP 2015145559A JP 2015145559 A JP2015145559 A JP 2015145559A JP 6030193 B2 JP6030193 B2 JP 6030193B2
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- light emitting
- emitting device
- wiring pattern
- light
- external connection
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45169—Platinum (Pt) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Description
本発明の発光装置用基板は、外部配線用穴が形成されていることが好ましく、当該外部配線用穴は切り欠き状であることがより好ましい。
Claims (8)
- 絶縁性を有する基板上面に、複数の配線パターン、正電極外部接続ランドおよび負電極外部接続ランドを備え、
前記基板上面に1つの封止体で封止された発光部が形成される第1の領域と、該第1の領域を取り囲む第2の領域とを有しており、
前記基板の形状は、四角またはその頂点の角を取った略四角形であり、
前記配線パターンは、アノード用配線パターンと、カソード用配線パターンとを備え、
前記アノード用配線パターンおよびカソード用配線パターンは、互いに対向するように形成され、
前記正電極外部接続ランドおよび負電極外部接続ランドは、前記第2の領域に形成され、かつ、外部接続配線を直接接続するためのものであり、
前記正電極外部接続ランドは前記アノード用配線パターンに、前記負電極外部接続ランドは前記カソード用配線パターンに、外部引き出し配線パターンを通じてそれぞれ電気的に接続されており、
前記外部引き出し配線パターンは、前記正電極外部接続ランドと前記アノード用配線パターンとの間の前記第2の領域に形成された第1の外部引き出し配線パターンと、前記負電極外部接続ランドと前記カソード用配線パターンとの間の前記第2の領域に形成された第2の外部引き出し配線パターンとを有し、
前記正電極外部接続ランドおよび負電極外部接続ランドは、前記第2領域において、前記基板の端と接しないように配置され、かつ、前記基板の対向する角部に、対向するように形成され、
前記基板を貫通する貫通穴を備え、
前記貫通穴は、前記第2領域において、前記基板の他の対向する角部に、対向するように1つずつ形成されたことを特徴とする発光装置用基板。 - 前記正電極外部接続ランドおよび負電極外部接続ランドは、前記基板の対向する角部の第1対角線上に配置され、
前記貫通穴は、前記第1対角線と異なる第2対角線上に配置されることを特徴とする請求項1に記載の発光装置用基板。 - 前記貫通穴は、固定用冶具を用いて相手部材に取り付けるための固定用穴であることを特徴とする請求項1に記載の発光装置用基板。
- 前記貫通穴は、切り欠き状であることを特徴とする請求項1〜3のいずれか1項に記載の発光装置用基板。
- 外部配線用穴が形成されていることを特徴とする請求項1に記載の発光装置用基板。
- 前記外部配線用穴は、切り欠き状であることを特徴とする請求項5に記載の発光装置用基板。
- 前記正電極外部接続ランドおよび負電極外部接続ランドの形状は、少なくとも丸みを有する形状を含むことを特徴とする請求項1に記載の発光装置用基板。
- 前記基板は、第1面と第1面と対向する第2面とを有し、
前記配線パターン、前記外部引き出し配線パターン、前記正電極外部接続ランドおよび負電極外部接続ランドは、前記第1面上のみに形成されることを特徴とする請求項1に記載の発光装置用基板。
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JP2015145559A JP6030193B2 (ja) | 2015-07-23 | 2015-07-23 | 発光装置用基板 |
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JP2014136034A Division JP5829316B2 (ja) | 2014-07-01 | 2014-07-01 | 発光装置およびその製造方法 |
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JP2016116215A Division JP6242437B2 (ja) | 2016-06-10 | 2016-06-10 | 発光装置 |
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JP6030193B2 true JP6030193B2 (ja) | 2016-11-24 |
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WO2003098711A1 (en) * | 2002-05-17 | 2003-11-27 | Ccs Inc. | Light emitting diode and method for fabricating the same |
US7800121B2 (en) * | 2002-08-30 | 2010-09-21 | Lumination Llc | Light emitting diode component |
JP2004265724A (ja) * | 2003-02-28 | 2004-09-24 | Toshiba Lighting & Technology Corp | 照明器具 |
US7095053B2 (en) * | 2003-05-05 | 2006-08-22 | Lamina Ceramics, Inc. | Light emitting diodes packaged for high temperature operation |
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