JP2014139979A - LED device - Google Patents

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JP2014139979A
JP2014139979A JP2013008285A JP2013008285A JP2014139979A JP 2014139979 A JP2014139979 A JP 2014139979A JP 2013008285 A JP2013008285 A JP 2013008285A JP 2013008285 A JP2013008285 A JP 2013008285A JP 2014139979 A JP2014139979 A JP 2014139979A
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led
led device
external connection
semiconductor layer
die
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JP6086738B2 (en
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Yoshimasa Takayama
吉正 高山
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Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
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Citizen Holdings Co Ltd
Citizen Electronics Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide an LED device easy to manufacture and capable of being mounted efficiently.SOLUTION: An LED die 16 included in an LED device 10 is composed of a semiconductor layer 14 and a sapphire substrate 13 laminated together, with an external connection electrode 15 for a cathode and an anode being provided one each on the semiconductor layer 14 side. This LED die 16 is disposed in array form so as to fasten the sapphire substrate 13 to the underside of a phosphor sheet 11. Further, a white reflection member 12 is filled in a gap between the LED dies 16 adjacent to each other. Because there are only two pieces of the external connection electrode 15, each external connection electrode 15 can come in a relatively large size, and a pitch between themselves will be relatively large. This LED device 10 can be mounted on a mother board at a time, so that efficient mounting can be achieved.

Description

本発明は、一個のパッケージ中に複数個のLEDダイを含むLED装置に関する。   The present invention relates to an LED device including a plurality of LED dies in one package.

高輝度化にともないベアチップであるLEDダイも大型化し、1mm×(0.5〜1)mm程度のものが入手できるようになってきた。この大きさは抵抗等の他のチップ部品と同程度になるため、LEDダイを樹脂等でパッケージ化したLED装置の平面サイズをLEDダイと同程度にすることがある。このパッケージはLEDダイのサイズを直接的に反映するためチップサイズパッケージ(以下CSPと呼ぶ)と呼ばれる。CSPは実装面積が小さくて済むことやパッケージ用部材が少なくて良いということばかりでなく、必要な輝度に応じてマザー基板に搭載する個数を簡単に変えられることから照明装置等の設計の自由度を増すという特徴がある。   With the increase in brightness, the LED die, which is a bare chip, has also increased in size and has become available in the order of 1 mm × (0.5-1) mm. Since this size is almost the same as that of other chip components such as resistors, the planar size of the LED device in which the LED die is packaged with a resin or the like may be made the same size as the LED die. This package is called a chip size package (hereinafter referred to as CSP) because it directly reflects the size of the LED die. CSP not only requires a small mounting area and requires fewer packaging members, but also allows the number of components mounted on the mother board to be easily changed according to the required brightness, so that the degree of freedom in designing lighting devices and the like There is a feature that increases.

CSPの究極的なものとしてLEDダイのチップサイズとパッケージの外形とが一致するLED装置が知られている(例えば特許文献1の図6)。そこで特許文献1の図6(a)を図9に再掲しこのLED装置について説明する。図9は、第1の従来例として示すCSP化した発光装置6(LED装置)の断面図である。なお一部符号を変更している。積層体12c(半導体層)の上面には蛍光体層30とレンズ32が積層している。積層体12cの下部には電解メッキ時の共通電極がエッチングされずに残ったシード金属22a,22b、銅配線層24a,24b、電解メッキで形成した柱状の銅ピラー26a,26bがある。   As an ultimate CSP, an LED device is known in which the chip size of an LED die matches the outer shape of a package (for example, FIG. 6 of Patent Document 1). Therefore, FIG. 6A of Patent Document 1 is shown again in FIG. 9, and this LED device will be described. FIG. 9 is a cross-sectional view of a CSP-type light emitting device 6 (LED device) shown as a first conventional example. Note that some symbols are changed. A phosphor layer 30 and a lens 32 are laminated on the upper surface of the laminated body 12c (semiconductor layer). Under the laminated body 12c, there are seed metals 22a and 22b, copper wiring layers 24a and 24b, and columnar copper pillars 26a and 26b formed by electrolytic plating.

積層体12cはp型クラッド層12a、発光層12e、n型クラッド層12bを備えている。積層体12cの下面は一部が開口した絶縁層20で覆われている。銅ピラー26a,26bの下部には半田ボール36a,36bが付着している。また銅ピラー26a,26bの間に補強樹脂28が充填されている。   The stacked body 12c includes a p-type cladding layer 12a, a light emitting layer 12e, and an n-type cladding layer 12b. The lower surface of the laminated body 12c is covered with an insulating layer 20 that is partially opened. Solder balls 36a and 36b are attached to the lower portions of the copper pillars 26a and 26b. A reinforcing resin 28 is filled between the copper pillars 26a and 26b.

図9に示したLED装置6の平面サイズは積層体12cの平面サイズと一致する。このLED装置6は、LED装置6が配列して連結したウェハーを個片化して得られ、CSPで区分される製品群のなかで最も小型化しているためWLP(ウェハーレベルパッケージ)と呼ばれることもある。このLED装置6は積層体12c上にもともとあった透明絶縁基板(特許文献1の段落0021、図2参照。)を極薄くまで削っているため発光層12eからの光が上方(図中矢印で示した)にのみ出射する。このためLED装置6の上部にのみ蛍光体層30を設ければ良い。   The planar size of the LED device 6 shown in FIG. 9 matches the planar size of the stacked body 12c. The LED device 6 is obtained by dividing a wafer in which the LED devices 6 are arranged and connected, and is called WLP (wafer level package) because it is the smallest in the product group divided by CSP. is there. Since the LED device 6 has a transparent insulating substrate (see paragraph 0021 of Patent Document 1 and FIG. 2) originally formed on the laminate 12c, the light from the light emitting layer 12e is upward (indicated by an arrow in the figure). (Only shown) For this reason, the phosphor layer 30 may be provided only on the LED device 6.

図9に示したLED装置6は、前述のように透明絶縁基板を極薄くまで削っているため、製造装置が大掛かりになったり製造工程が長くなったりする。またLED装置6は、ウェハーレベルで蛍光体層30を形成しているため、ウェハー上の個別のLEDダイが有する発光特性のばらつきに対応することができない。この結果、発光色の管理が難しくなるという課題がある。そこで本願の発明者は、小型でありながら作り易く発光色の管理が容易なLED装置として、透明絶縁基板を残し、その下面に形成された半導体層の側面とともに透明絶縁基板の側面を白色反射部材で被覆し、透明絶縁基板及び白色反射部材の上面を蛍光体シートで被覆したフリップチップ実装用のLED装置を製作した(特許文献2の図1)。   Since the LED device 6 shown in FIG. 9 has the transparent insulating substrate cut to an extremely thin thickness as described above, the manufacturing apparatus becomes large and the manufacturing process becomes long. Moreover, since the LED device 6 forms the phosphor layer 30 at the wafer level, it cannot cope with variations in light emission characteristics of individual LED dies on the wafer. As a result, there is a problem that it becomes difficult to manage the emission color. Therefore, the inventor of the present application leaves a transparent insulating substrate as an LED device that is small but easy to make and easy to control the emission color, and the side surface of the transparent insulating substrate is white reflecting member along with the side surface of the semiconductor layer formed on the lower surface thereof. The LED device for flip chip mounting was manufactured by covering the upper surface of the transparent insulating substrate and the white reflective member with a phosphor sheet (FIG. 1 of Patent Document 2).

特許文献2の図1に示されたLED装置を図10に再掲示しその構造を説明する。図10は第2の従来例として示すLED装置10bの断面図である。なお図10では符号を変
更している。LED装置10bは、サファイヤ基板14b(透明絶縁基板)とその下面に形成された半導体層15bとを有するLEDダイ16bを含み、側面に白色反射部材17bを備え、LEDダイ16b及び白色反射部材17bの上面に出射光を波長変換する蛍光体シート11bを備えている。蛍光体シート11bとサファイヤ基板14bの間には接着層13bがあり、蛍光体シート11bとサファイヤ基板14bとが接着している。またLEDダイ16bの半導体層15bと接続する突起電極18b,19bは、それぞれアノードとカソードであり、マザー基板と接続するための外部接続電極となっている。なお、マザー基板とは抵抗やコンデンサなど他の電子部品とともにLED装置10bを実装する基板である。また、白色反射部材17bは厚さが100μm以下でも充分に機能するのでLED装置10bを小型化できる。さらにLED装置10bは、多数のLED装置を連結した状態で加工し、最後にこの連結体を個片化して所望のLED装置を得るという、いわゆる集合工法が適用できるため製造し易い。
The LED device shown in FIG. 1 of Patent Document 2 is shown again in FIG. 10 and its structure will be described. FIG. 10 is a cross-sectional view of an LED device 10b shown as a second conventional example. In FIG. 10, the reference numerals are changed. The LED device 10b includes an LED die 16b having a sapphire substrate 14b (transparent insulating substrate) and a semiconductor layer 15b formed on the lower surface thereof. The LED device 10b includes a white reflecting member 17b on a side surface, and the LED die 16b and the white reflecting member 17b. A phosphor sheet 11b that converts the wavelength of the emitted light is provided on the upper surface. There is an adhesive layer 13b between the phosphor sheet 11b and the sapphire substrate 14b, and the phosphor sheet 11b and the sapphire substrate 14b are adhered to each other. The protruding electrodes 18b and 19b connected to the semiconductor layer 15b of the LED die 16b are an anode and a cathode, respectively, and are external connection electrodes for connecting to the mother substrate. The mother board is a board on which the LED device 10b is mounted together with other electronic components such as resistors and capacitors. Further, since the white reflecting member 17b functions sufficiently even when the thickness is 100 μm or less, the LED device 10b can be downsized. Furthermore, the LED device 10b is easy to manufacture because a so-called collective construction method can be applied in which a large number of LED devices are processed and finally a desired LED device is obtained by dividing the connected body into individual pieces.

特開2010−141176号公報 (図6(a))JP 2010-141176 A (FIG. 6A) 特開2012−227470号公報 (図1)JP2012-227470A (FIG. 1)

本願の発明者は、上記LED装置10bを高輝度ランプの光源に適用してみた。この高輝度ランプの光源は、表面反射率と放熱効率が良好な基板に多数のLED装置10bを配列させて実装する。しかしながらLED装置10bが多数であるため実装に掛かる工数が大きくなるという課題に直面した。   The inventor of the present application tried to apply the LED device 10b to a light source of a high-intensity lamp. The light source of this high-intensity lamp is mounted by arranging a large number of LED devices 10b on a substrate having good surface reflectance and heat dissipation efficiency. However, since the number of LED devices 10b is large, the problem of increasing the man-hours required for mounting has been faced.

そこで本発明は、この課題に鑑みて為されたものであり、製造し易いという特徴を維持したまま効率的に実装できるLED装置を提供することを目的とする。   Therefore, the present invention has been made in view of this problem, and an object thereof is to provide an LED device that can be efficiently mounted while maintaining the feature of being easily manufactured.

以上の目的を達成するため本発明のLED装置は、一個のパッケージ中に複数個のLEDダイを含むLED装置において、
前記LEDダイは半導体層と透明絶縁基板が積層し、前記半導体層側にアノード及びカソード用の外部接続電極をそれぞれ一個ずつ有し、
透光性シートの下面に複数の前記透明絶縁基板を貼りつけるようにして前記LEDダイが配列し、
前記透光性シートの下面で隣接する前記LEDダイ同士の間隙に充填部材を備える
ことを特徴とする。
In order to achieve the above object, the LED device of the present invention is an LED device including a plurality of LED dies in one package.
The LED die is formed by laminating a semiconductor layer and a transparent insulating substrate, and has one external connection electrode for each of an anode and a cathode on the semiconductor layer side,
The LED dies are arranged so that a plurality of the transparent insulating substrates are attached to the lower surface of the translucent sheet,
A filling member is provided in a gap between the LED dies adjacent to each other on the lower surface of the translucent sheet.

本発明のLED装置は、透光性シートと、外部接続電極を備えたLEDダイと、LEDダイ同士の間隙に存在し平板形状を維持する充填部材からなり、構成部材が少なく単純な構造であるため製造し易い。   The LED device of the present invention comprises a translucent sheet, an LED die provided with an external connection electrode, and a filling member that exists in the gap between the LED dies and maintains a flat plate shape, and has a simple structure with few constituent members. Therefore, it is easy to manufacture.

また本発明のLED装置に含まれるLEDダイは、半導体層と透明絶縁基板が積層したものであり、透光性シートの下面に透明絶縁基板を貼りつけるようにして配列している。LEDダイの半導体層側にはアノードとカソード用の外部接続電極がそれぞれ一個ずつ設けられている。この外部接続電極は2個に集約しているため比較的大きなサイズを確保できる。このためLEDダイを透光性シートに配列させたとき、各外部接続電極は、前述のように実装し易い大きさであるうえ、さらに比較的大きなピッチで配列することになるのでマザー基板等に実装させ易くなる。このような電極構成を有する本発明のLED装置は、多数のLEDダイを一回的にマザー基板等に実装できるため効率的に実装できる。   The LED die included in the LED device of the present invention is a laminate of a semiconductor layer and a transparent insulating substrate, and is arranged so that the transparent insulating substrate is attached to the lower surface of the translucent sheet. One external connection electrode for the anode and one for the cathode is provided on the semiconductor layer side of the LED die. Since these external connection electrodes are concentrated in two, a relatively large size can be secured. For this reason, when the LED dies are arranged on the translucent sheet, each external connection electrode has a size that is easy to mount as described above and is arranged at a relatively large pitch. It becomes easy to mount. The LED device of the present invention having such an electrode configuration can be mounted efficiently because a large number of LED dies can be mounted once on a mother substrate or the like.

前記充填部材が白色反射部材であっても良い。   The filling member may be a white reflecting member.

前記充填部材が前記外部接続電極を除き前記LEDダイの底面を被覆していても良い。   The filling member may cover the bottom surface of the LED die except for the external connection electrode.

前記充填部材が透光性部材と白色反射部材とを含み、前記LEDダイの側面を前記透光性部材が被覆し、前記透光性部材の外周を前記白色反射部材が被覆しても良い。   The filling member may include a translucent member and a white reflective member, the side surface of the LED die may be covered with the translucent member, and the outer periphery of the translucent member may be covered with the white reflective member.

底面に二つの前記LEDダイの外部接続電極同士を接続する配線を備えていても良い。   You may provide the wiring which connects the external connection electrodes of two said LED dies on the bottom face.

前記透光性シートは蛍光体シートであっても良い。   The translucent sheet may be a phosphor sheet.

以上のように本発明のLED装置は、透光性シートの下面に透明絶縁基板が貼りつくようにしてLEDダイが一体的に配列し、各LEDダイ間に充填部材を備えただけの単純な構造であるため製造し易い。さらに本発明のLED装置は、LEDダイの各外部接続電極が実装し易い大きさであるうえ、比較的大きな配列ピッチになっているため実装しやすく、一回的に多数のLEDダイをマザー基板等に実装できるため実装に掛かる工数が少なくなり、効率的な実装が達成される。   As described above, the LED device of the present invention is a simple one in which the LED dies are integrally arranged so that the transparent insulating substrate adheres to the lower surface of the translucent sheet, and the filling member is provided between the LED dies. It is easy to manufacture because of its structure. Furthermore, the LED device according to the present invention is easy to mount because each external connection electrode of the LED die is easy to mount and has a relatively large arrangement pitch. Therefore, the number of man-hours required for mounting is reduced and efficient mounting is achieved.

本発明の第1実施形態におけるLED装置の平面図。The top view of the LED device in 1st Embodiment of this invention. 図1に示すLED装置の正面図。The front view of the LED apparatus shown in FIG. 図1に示すLED装置の底面図。The bottom view of the LED device shown in FIG. 図1に示すLED装置の断面図。Sectional drawing of the LED apparatus shown in FIG. 本発明の第2実施形態におけるLED装置の底面図。The bottom view of the LED apparatus in 2nd Embodiment of this invention. 図5に示すLED装置の断面図。Sectional drawing of the LED apparatus shown in FIG. 本発明の第3実施形態におけるLED装置の底面図。The bottom view of the LED apparatus in 3rd Embodiment of this invention. 図7に示すLED装置の断面図。Sectional drawing of the LED apparatus shown in FIG. 第1の従来例におけるLED装置の断面図。Sectional drawing of the LED apparatus in a 1st prior art example. 第2の従来例におけるLED装置の断面図。Sectional drawing of the LED apparatus in a 2nd prior art example.

以下、添付図1〜8を参照しながら本発明の好適な実施形態について詳細に説明する。なお図面の説明において、同一または相当要素には同一の符号を付し、重複する説明は省略する。また説明のため部材の縮尺は適宜変更している。さらに特許請求の範囲に記載した発明特定事項との関係をカッコ内に記載している。   Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. In the description of the drawings, the same or equivalent elements will be denoted by the same reference numerals, and redundant description will be omitted. For the sake of explanation, the scale of the members is changed as appropriate. Furthermore, the relationship with the invention specific matter described in the claims is described in parentheses.

(第1実施形態)
添付図1〜4を参照して本発明の第1実施形態として示すLED装置10を詳細に説明する。まず図1〜3によりLED装置10の外観を説明する。図1はLED装置10の平面図、図2が正面図、図3が底面図である。図1に示すようにLED装置10を上部から眺めると、長方形の蛍光体シート11(透光性シート)が見える。図2に示すようにLED装置10を正面から眺めると、蛍光体シート11の下側に白色反射部材12(充填部材)が見え、さらに白色反射部材12の下に2個の外部接続電極15が見える。図3に示すようにLED装置10を下から眺めると、長方形の白色反射部材12と、その内側に5行5列で配列したLEDダイ16(図4参照)の半導体層14が見える。各半導体層14の内側には2個ずつ外部接続電極15がある。
(First embodiment)
The LED device 10 shown as the first embodiment of the present invention will be described in detail with reference to FIGS. First, the external appearance of the LED device 10 will be described with reference to FIGS. 1 is a plan view of the LED device 10, FIG. 2 is a front view, and FIG. 3 is a bottom view. As shown in FIG. 1, when the LED device 10 is viewed from above, a rectangular phosphor sheet 11 (translucent sheet) can be seen. As shown in FIG. 2, when the LED device 10 is viewed from the front, the white reflecting member 12 (filling member) can be seen below the phosphor sheet 11, and the two external connection electrodes 15 are further under the white reflecting member 12. appear. As shown in FIG. 3, when the LED device 10 is viewed from below, the rectangular white reflecting member 12 and the semiconductor layer 14 of the LED die 16 (see FIG. 4) arranged in 5 rows and 5 columns inside can be seen. Two external connection electrodes 15 are provided inside each semiconductor layer 14.

次に図4によりLED装置10の内部構造を説明する。図4は、図1のAA線に沿って
描いたLED装置10の断面図である。LED装置10では、蛍光体シート11の下面にLEDダイ16が接着層(図示せず)を介して貼りついており、各LEDダイ16の間隙及びLED装置10の外周部に白色反射部材12が存在する。LEDダイ16は、サファイヤ基板13(透明絶縁基板)と半導体層14を含み、サファイヤ基板13の下面側に半導体層14が形成され、半導体層14に2個の外部接続電極15が接続している。
Next, the internal structure of the LED device 10 will be described with reference to FIG. FIG. 4 is a cross-sectional view of the LED device 10 drawn along the line AA in FIG. In the LED device 10, the LED die 16 is attached to the lower surface of the phosphor sheet 11 via an adhesive layer (not shown), and the white reflecting member 12 exists in the gap between the LED dies 16 and the outer periphery of the LED device 10. To do. The LED die 16 includes a sapphire substrate 13 (transparent insulating substrate) and a semiconductor layer 14, a semiconductor layer 14 is formed on the lower surface side of the sapphire substrate 13, and two external connection electrodes 15 are connected to the semiconductor layer 14. .

蛍光体シート11は、蛍光体微粒子を混練したシリコーン樹脂をシート状にして硬化させた透光性シートであり、厚さが100〜300μm程度である。濃度消光による損失を軽減したい場合は蛍光体シート11を厚めに設定する。白色反射部材12はシリコーン樹脂に酸化チタンやアルミナなどの反射性微粒子を混練し熱硬化させたものである。この結果、例えば平面サイズが0.8mm×0.3mmのLEDダイ16の場合、LEDダイ16の配列ピッチとして長手方向を1.0mm、短手方向を0.5mmとすることができる。このとき外部接続電極15のサイズは0.3mm×0.2mm程度になり、マザー基板等への接続にハンダリフローが適用可能となる。   The phosphor sheet 11 is a translucent sheet obtained by curing a silicone resin kneaded with phosphor fine particles into a sheet shape, and has a thickness of about 100 to 300 μm. When it is desired to reduce loss due to concentration quenching, the phosphor sheet 11 is set to be thicker. The white reflecting member 12 is obtained by kneading and thermosetting reflective fine particles such as titanium oxide and alumina in a silicone resin. As a result, for example, in the case of the LED die 16 having a plane size of 0.8 mm × 0.3 mm, the arrangement pitch of the LED dies 16 can be 1.0 mm in the longitudinal direction and 0.5 mm in the short direction. At this time, the size of the external connection electrode 15 is about 0.3 mm × 0.2 mm, and solder reflow can be applied to the connection to the mother substrate or the like.

LEDダイ16に含まれるサファイヤ基板13は厚さが80〜150μm程度である。サファイヤ基板13の下面に形成された半導体層14は、厚みが10μm程度で、p型半導体層及びn型半導体層を含み、その境界面が発光層となる。半導体層14の下部には層間絶縁膜や保護膜が存在し、保護膜上に外部接続電極15が形成される。二つの外部接続電極15はアノード及びカソードであり、それぞれ層間絶縁膜上の配線を介してp型半導体層及びn型半導体層と接続している。また外部接続電極15は、抵抗やコンデンサなど他の電子部品が実装されたマザー基板と接続するための電極であり、厚さが数100nmから数10μmであり、半田付けのため表面に金層又は錫層を備えている。   The sapphire substrate 13 included in the LED die 16 has a thickness of about 80 to 150 μm. The semiconductor layer 14 formed on the lower surface of the sapphire substrate 13 has a thickness of about 10 μm, includes a p-type semiconductor layer and an n-type semiconductor layer, and a boundary surface thereof serves as a light emitting layer. An interlayer insulating film and a protective film exist below the semiconductor layer 14, and the external connection electrode 15 is formed on the protective film. The two external connection electrodes 15 are an anode and a cathode, and are connected to the p-type semiconductor layer and the n-type semiconductor layer via wiring on the interlayer insulating film, respectively. The external connection electrode 15 is an electrode for connecting to a mother board on which other electronic components such as a resistor and a capacitor are mounted, has a thickness of several hundreds of nanometers to several tens of micrometers, and has a gold layer or a surface on the surface for soldering. It has a tin layer.

次にLED装置10の製造方法を説明する。本製造工程は、いわゆる集合工法と呼ばれるもので、支持用の大判蛍光体シート上に多数のLEDダイ16を所定のピッチで配列し、この集合体に対して様々な加工を施し、最後にこの集合体を個片化して個別のLED装置10を得るものである。なお大判蛍光体シートには数100から数1000個のLEDダイ16を配列させる。   Next, a method for manufacturing the LED device 10 will be described. This manufacturing process is a so-called assembly method, in which a large number of LED dies 16 are arranged at a predetermined pitch on a supporting large-format phosphor sheet, and various processes are applied to the assembly. The aggregate is separated into pieces to obtain individual LED devices 10. In addition, several hundred to several thousand LED dies 16 are arranged on the large-sized phosphor sheet.

先ず、大判蛍光体シート上に多数のLEDダイ16を配列する。このときLEDダイ16の外部接続電極15を上にして、サファイヤ基板13を大判蛍光体シート上に貼りつける。LEDダイ16はピッカー等で一個ずつ大判蛍光体シート上に配置しても良い。また、いったん他の粘着シートに複数のLEDダイ16を配列させておき、この複数のLEDダイ16を一括して大判蛍光体シートに貼り付けることもできる。なお予め大判蛍光体シートには接着材を印刷しておく。   First, a large number of LED dies 16 are arranged on a large-format phosphor sheet. At this time, the sapphire substrate 13 is stuck on the large-sized phosphor sheet with the external connection electrode 15 of the LED die 16 facing upward. The LED dies 16 may be arranged one by one on a large phosphor sheet with a picker or the like. It is also possible to arrange a plurality of LED dies 16 once in another pressure-sensitive adhesive sheet and affix the plurality of LED dies 16 to a large-sized phosphor sheet at once. Note that an adhesive is printed on the large-sized phosphor sheet in advance.

次にディペンサーによりLEDダイ16間に硬化前の白色反射部材12を充填する。このとき予め大判蛍光体シートの外周にはダム材を設けておく。充填が完了したら加熱して白色反射部材12を硬化させる。最後に白色反射部材12とともに大判蛍光体シートを切断し、個片化されたLED装置10を得る。切断にはダイサーやワイヤを使う。なお白色反射部材12は完成時に厚さが30〜50μmあれば充分に遮光できる。   Next, the white reflective member 12 before curing is filled between the LED dies 16 by a dispenser. At this time, a dam material is previously provided on the outer periphery of the large-sized phosphor sheet. When filling is completed, the white reflecting member 12 is cured by heating. Finally, the large-sized phosphor sheet is cut together with the white reflecting member 12 to obtain the LED device 10 which is divided into pieces. Dicer or wire is used for cutting. The white reflecting member 12 can be sufficiently shielded if it has a thickness of 30 to 50 μm when completed.

本実施形態のLED装置10は長方形の領域にLEDダイ16を配列させていた(図3参照)。しかしながら配列させる領域は長方形に限られない。例えば円形の領域にLEDダイ16を配列させても良い。さらに蛍光体シートも円形に切り抜き平面形状が円形のLED装置を得ることもできる。またLEDダイ16は放射状に配列させても良い。LED装置の発光領域が円形であると、レンズにより配光分布を調整し易くなる。またLEDダイ16の発光を波長変換する必要がなければ、蛍光体シート11は透明な透光性シートに置き換えることができる。   In the LED device 10 of the present embodiment, the LED dies 16 are arranged in a rectangular area (see FIG. 3). However, the area to be arranged is not limited to a rectangle. For example, the LED dies 16 may be arranged in a circular area. Further, the phosphor sheet can be cut out in a circular shape to obtain an LED device having a circular planar shape. The LED dies 16 may be arranged radially. When the light emitting area of the LED device is circular, the light distribution can be easily adjusted by the lens. If it is not necessary to convert the wavelength of the light emitted from the LED die 16, the phosphor sheet 11 can be replaced with a transparent light-transmitting sheet.

(第2実施形態)
図1〜4で示したLED装置10ではLEDダイ16の間隙に白色反射部材12を充填していた。しかしながら機械的な強度を確保するためだけならLEDダイ16間に充填する部材は白色反射部材に限られず、例えば透光性の部材であっても良い。さらに後述するようにLEDダイ16の側面を透光性の部材で被覆した方が発光効率が向上する。またLED装置10の底面では外部接続電極15と半導体層14が露出していたが、外部接続電極15だけ露出させても良い。またLED装置10では各LEDダイ16の外部接続電極15は分離していたが、底面において配線を付加し、異なるLEDダイ16の外部接続電極15同士を接続するようにしても良い。
(Second Embodiment)
In the LED device 10 shown in FIGS. 1 to 4, the white reflective member 12 is filled in the gap between the LED dies 16. However, the member filled between the LED dies 16 is not limited to the white reflecting member only for ensuring the mechanical strength, and may be a translucent member, for example. Further, as will be described later, the luminous efficiency is improved when the side surface of the LED die 16 is covered with a translucent member. Further, although the external connection electrode 15 and the semiconductor layer 14 are exposed on the bottom surface of the LED device 10, only the external connection electrode 15 may be exposed. In the LED device 10, the external connection electrodes 15 of the LED dies 16 are separated. However, wiring may be added on the bottom surface to connect the external connection electrodes 15 of the different LED dies 16.

そこで図5,6により、第2実施形態として、充填部材が透光性部材と白色反射部材を含み、底面が外部接続電極を除き白色反射部材で被覆され、外部接続電極間を接続する配線を備えるLED装置50について説明する。   Therefore, as shown in FIGS. 5 and 6, as a second embodiment, the filling member includes a translucent member and a white reflective member, the bottom surface is covered with the white reflective member except for the external connection electrodes, and wiring that connects between the external connection electrodes is provided. The LED device 50 provided will be described.

図5はLED装置50の底面図である。なお平面図は第1実施形態の図1と等しいので図示していない。正面図は底面の外部接続電極15(図6参照)部近傍を除き第1実施形態の図2と等しく、断面図(図6)があるので図示していない。図5においてLED装置50を下から眺めると、白色反射部材52上に配線51a,51b,51c,51dが見える。配線51a及び配線51dは、電力供給用の電極であり、図の左上隅及び右下隅のLEDダイ16の1個の外部接続電極15(図6参照)と接続している。配線51bは図の長手方向(左右方向)に隣接するLEDダイ16の外部接続電極15同士を接続している。配線51cは図の短手方向(上下方向)に隣接するLEDダイ16の外部接続電極15同士を接続している。このようにしてLED装置50では、25個のLEDダイ16が直列接続している。なお図中、白色反射部材52で被覆されたLEDダイ16を点線で示している。   FIG. 5 is a bottom view of the LED device 50. Since the plan view is the same as FIG. 1 of the first embodiment, it is not shown. The front view is the same as FIG. 2 of the first embodiment except for the vicinity of the external connection electrode 15 (see FIG. 6) on the bottom surface, and is not shown because there is a sectional view (FIG. 6). In FIG. 5, when the LED device 50 is viewed from below, wirings 51 a, 51 b, 51 c, 51 d can be seen on the white reflective member 52. The wiring 51a and the wiring 51d are electrodes for supplying power, and are connected to one external connection electrode 15 (see FIG. 6) of the LED die 16 at the upper left corner and the lower right corner of the drawing. The wiring 51b connects the external connection electrodes 15 of the LED die 16 adjacent in the longitudinal direction (left-right direction) in the figure. The wiring 51c connects the external connection electrodes 15 of the LED die 16 adjacent in the short direction (vertical direction) in the figure. Thus, in the LED device 50, 25 LED dies 16 are connected in series. In the figure, the LED die 16 covered with the white reflecting member 52 is indicated by a dotted line.

次に図6によりLED装置50の内部構造を説明する。図6は、図5のBB線に沿って描いたLED装置50の断面図である。LED装置50では蛍光体シート11の下面にLEDダイ16が接着層(図示せず)を介して貼りついている。各LEDダイ16の側面は蛍光樹脂53(透光性部材)で被覆されており、蛍光樹脂53の間隙及びLED装置50の外周部並びにLEDダイ16の底面部に白色反射部材52が存在する。LEDダイ16は、図4で示したLED装置10のLEDダイ16と同じものである。各LEDダイ16の外部接続電極15は白色反射部材52から露出しており、外部接続電極15には配線51a,51b,51cが接続している。蛍光樹脂53はシリコーン樹脂に蛍光体微粒子を混練し硬化させたもので、厚さは50μm程度である。   Next, the internal structure of the LED device 50 will be described with reference to FIG. FIG. 6 is a cross-sectional view of the LED device 50 drawn along the line BB in FIG. In the LED device 50, the LED die 16 is attached to the lower surface of the phosphor sheet 11 via an adhesive layer (not shown). The side surface of each LED die 16 is covered with a fluorescent resin 53 (translucent member), and the white reflecting member 52 exists in the gap between the fluorescent resin 53, the outer peripheral portion of the LED device 50, and the bottom surface portion of the LED die 16. The LED die 16 is the same as the LED die 16 of the LED device 10 shown in FIG. The external connection electrode 15 of each LED die 16 is exposed from the white reflecting member 52, and wirings 51 a, 51 b, 51 c are connected to the external connection electrode 15. The fluorescent resin 53 is obtained by kneading and curing phosphor fine particles in a silicone resin, and has a thickness of about 50 μm.

前述したようにLED装置50はLEDダイ16の側面と白色反射部材52との間に蛍光樹脂53が存在する。LED装置50は、大判蛍光体シート(第1実施形態のLED装置10に対する製造方法を参照)にLEDダイ16を配列させたら、蛍光樹脂53をLEDダイ16の間隙等に充填し硬化させ、次にLEDダイ16の側部に蛍光樹脂53が残るように蛍光樹脂53を削って溝を形成し、続いてこの溝に硬化前の白色反射部材52を充填し硬化させ、最後に個片化して製造する。   As described above, the LED device 50 includes the fluorescent resin 53 between the side surface of the LED die 16 and the white reflecting member 52. After the LED die 16 is arranged on a large-format phosphor sheet (see the manufacturing method for the LED device 10 of the first embodiment), the LED device 50 fills the gap between the LED die 16 with the fluorescent resin 53 and cures it. Then, the fluorescent resin 53 is scraped to form a groove so that the fluorescent resin 53 remains on the side of the LED die 16, and then the white reflecting member 52 before curing is filled and cured in this groove, and finally is separated into pieces. To manufacture.

図4等で示した第1実施形態のLED装置10ではLEDダイ16の側面と白色反射部材12とが直接的に接触しているため、サファイヤ基板13の側面から出射しようとする光がサファイヤ基板13内に戻されてしまう。この光は迷光になったり、反射や半導体層14による再吸収で減衰したりする。つまりLED装置10は構造上このような損失を内包している。これに対し本実施形態のLED装置50のようにLEDダイ16の側面と白色反射部材52との間に蛍光樹脂53が存在すると、LEDダイ16の側面から出射し、
蛍光樹脂53をとおり白色反射部材12で反射した光は、その一部が再びサファイヤ基板13内に入り込むとしても、大部分は蛍光樹脂53内を伝播してLED装置50から出射するので、前述の損失が少なくなり出射効率が向上する。
In the LED device 10 of the first embodiment shown in FIG. 4 and the like, the side surface of the LED die 16 and the white reflecting member 12 are in direct contact with each other, so that light that is going to be emitted from the side surface of the sapphire substrate 13 is sapphire substrate. 13 is returned. This light becomes stray light or attenuates due to reflection or reabsorption by the semiconductor layer 14. That is, the LED device 10 includes such a loss due to its structure. On the other hand, when the fluorescent resin 53 is present between the side surface of the LED die 16 and the white reflecting member 52 as in the LED device 50 of the present embodiment, the light is emitted from the side surface of the LED die 16,
Even though a part of the light reflected by the white reflecting member 12 through the fluorescent resin 53 enters the sapphire substrate 13 again, most of the light propagates through the fluorescent resin 53 and is emitted from the LED device 50. Loss is reduced and the emission efficiency is improved.

またLED装置50は白色反射部材52が外部接続電極15を除いてLEDダイ16の底面(半導体層14)を被覆している。LED装置50は、硬化前の白色反射部材52を充填するとき、白色反射部材52を多めに充填し、白色反射部材52の硬化後、白色反射部材52を研磨して外部接続電極15を露出させることにより製造できる。この際、白色反射部材52の充填にスキージが使える。LEDダイ16の底面に白色反射部材52が存在すると、底面の汚染から半導体層14を保護することができ、さらにLED装置50の底面において半導体層14の底面から漏れ出そうとする光を遮光できる。   In the LED device 50, the white reflecting member 52 covers the bottom surface (semiconductor layer 14) of the LED die 16 except for the external connection electrodes 15. When filling the white reflective member 52 before curing, the LED device 50 fills the white reflective member 52 in a large amount, and after the white reflective member 52 is cured, the white reflective member 52 is polished to expose the external connection electrodes 15. Can be manufactured. At this time, a squeegee can be used for filling the white reflecting member 52. When the white reflecting member 52 is present on the bottom surface of the LED die 16, the semiconductor layer 14 can be protected from contamination of the bottom surface, and light that is about to leak from the bottom surface of the semiconductor layer 14 can be shielded from the bottom surface of the LED device 50. .

底部に形成した配線51a〜dは、印刷法又はホトリソグラフィと組み合わせたメッキ法で形成する。このとき配線51a〜dには、LED装置50をマザー基板等に実装するときのリフロー温度で融解しない材料を選択する。LED装置50は、マザー基板の電極と配線51a,51dだけが電気的に接続していれば良いので、第1実施形態のLED装置10に比べ大幅に実装が簡単化する。   The wirings 51a to 51d formed on the bottom are formed by a printing method or a plating method combined with photolithography. At this time, a material that does not melt at the reflow temperature when the LED device 50 is mounted on a mother board or the like is selected for the wirings 51a to 51d. Since the LED device 50 only needs to be electrically connected to the electrodes of the mother board and the wirings 51a and 51d, the mounting is greatly simplified as compared with the LED device 10 of the first embodiment.

LED装置50では充填部材が蛍光樹脂53と白色反射部材52からなっていた。しかしながら充填部材を、蛍光樹脂53又は透明樹脂等の透光性部材だけにしても良い。この場合、前述のようにLEDダイ16の側部から出射した光は、多くの成分がLEDダイ16内に戻らないため発光効率が向上する。また底面を蛍光樹脂53又は透明樹脂等の透光性部材で被覆すると、LEDダイ16の底面から漏れ出す光は遮光できないとしても、半導体層14の汚染は防止できる。またLED装置50では白色反射部材52が平面的にみると網目状になっていた。これに対し白色反射部材がLED装置50の外周部だけを枠上に囲むようにしても良い。このようにすると透光性部材を削って溝を形成する工程が簡単になる。   In the LED device 50, the filling member is composed of the fluorescent resin 53 and the white reflecting member 52. However, the filling member may be only a translucent member such as the fluorescent resin 53 or the transparent resin. In this case, as described above, the light emitted from the side portion of the LED die 16 is improved in luminous efficiency because many components do not return into the LED die 16. Further, when the bottom surface is covered with a light-transmitting member such as a fluorescent resin 53 or a transparent resin, contamination of the semiconductor layer 14 can be prevented even if light leaking from the bottom surface of the LED die 16 cannot be blocked. Further, in the LED device 50, the white reflecting member 52 has a mesh shape when viewed in plan. On the other hand, the white reflective member may surround only the outer peripheral portion of the LED device 50 on the frame. This simplifies the process of cutting the translucent member to form the groove.

(第3実施形態)
第1及び第2実施形態で示したLED装置10,50に含まれるLEDダイ16は、一個ずつ分離していた。しかしながら本発明のLED装置ではLEDダイ16を連結した状態で配列させるほうがよい場合がある。そこで図7と図8により第3実施形態として、LEDダイ16を2個連結した素子を蛍光体シート上に配列させたLED装置70を説明する。
(Third embodiment)
The LED dies 16 included in the LED devices 10 and 50 shown in the first and second embodiments are separated one by one. However, in the LED device of the present invention, it may be better to arrange the LED dies 16 in a connected state. 7 and 8, an LED device 70 in which two LED dies 16 connected elements are arranged on a phosphor sheet will be described as a third embodiment.

図7はLED装置70の底面図である。なお平面図は長方形の蛍光体シートが見えるだけであり、正面図は断面図から容易に類推できるので、それぞれ図示していない。図7においてLED装置70を下から眺めると、白色反射部材72の内側にLEDダイ16の半導体層14が見える。ここでLEDダイ16は図4等で示したLEDダイ16と同じものであるが、2個連結した状態でウェハーから切り出したものである。このようにすると、ウェハーのダイシングや大判蛍光体シート(第1実施形態のLED装置10に対する製造方法を参照)への配列に掛かる工数を削減できる。各LEDダイ16には2個の外部接続電極15がある。なお本実施形態で蛍光体シート71(図8参照)に配列したLEDダイは2個のLEDダイ16を連結した状態でウェハーから切り出した素子であり、分離していないが、説明の便宜上、図7ではLEDダイ16間の線を書き加えている(図8も同様)。   FIG. 7 is a bottom view of the LED device 70. The plan view only shows a rectangular phosphor sheet, and the front view is not shown because it can be easily inferred from the cross-sectional view. In FIG. 7, when the LED device 70 is viewed from below, the semiconductor layer 14 of the LED die 16 can be seen inside the white reflecting member 72. Here, the LED die 16 is the same as the LED die 16 shown in FIG. 4 or the like, but is cut from the wafer in a state where two are connected. If it does in this way, the man-hour concerning the arrangement | positioning to the dicing of a wafer and the large format fluorescent substance sheet (refer to the manufacturing method with respect to LED device 10 of 1st Embodiment) can be reduced. Each LED die 16 has two external connection electrodes 15. In this embodiment, the LED dies arranged on the phosphor sheet 71 (see FIG. 8) are elements cut out from the wafer in a state where the two LED dies 16 are connected, and are not separated. 7, lines between the LED dies 16 are added (the same applies to FIG. 8).

次に図8によりLED装置70の内部構造を説明する。図8は、図7のCC線に沿って描いたLED装置70の断面図である。LED装置70の断面と図4で示したLED装置10の断面は略等しく、LED装置70の断面においてLEDダイ16が連結していると
ころが異なる。なお作図上の理由で図4と図8の断面図中に含まれるLEDダイ16の個数は異なっている。図4の蛍光体シート11及び白色反射部材12と図8の蛍光体シート71及び白色反射部材72はそれぞれ同じ材料からなる。
Next, the internal structure of the LED device 70 will be described with reference to FIG. FIG. 8 is a cross-sectional view of the LED device 70 drawn along the CC line of FIG. The cross section of the LED device 70 and the cross section of the LED device 10 shown in FIG. 4 are substantially the same, and the place where the LED die 16 is connected in the cross section of the LED device 70 is different. Note that the number of LED dies 16 included in the cross-sectional views of FIG. 4 and FIG. The phosphor sheet 11 and the white reflecting member 12 in FIG. 4 and the phosphor sheet 71 and the white reflecting member 72 in FIG. 8 are made of the same material.

LED装置70は管状照明装置等で使われるライン光源である。このためLEDダイ16を長手方向に2個連結した。また第2実施形態のLED装置50のように、LEDダイ16の底面を白色反射部材72で被覆したり、充填部材を透光性部材と白色反射部材72からなるようにしたり、底部に配線を形成したりしても良い。   The LED device 70 is a line light source used in a tubular lighting device or the like. For this reason, two LED dies 16 were connected in the longitudinal direction. Further, like the LED device 50 of the second embodiment, the bottom surface of the LED die 16 is covered with the white reflecting member 72, the filling member is made of the translucent member and the white reflecting member 72, or the bottom portion is wired. It may be formed.

10,50,70…LED装置、
11,71…蛍光体シート(透光性シート)、
12,52,72…白色反射部材、
13…サファイヤ基板(透明絶縁基板)、
14…半導体層、
15…外部接続電極、
16…LEDダイ、
51a,51b,51c,51d…配線。
10, 50, 70 ... LED device,
11, 71 ... phosphor sheet (translucent sheet),
12, 52, 72 ... white reflective member,
13: Sapphire substrate (transparent insulating substrate),
14 Semiconductor layer,
15 ... External connection electrode,
16 ... LED die,
51a, 51b, 51c, 51d... Wiring.

Claims (6)

一個のパッケージ中に複数個のLEDダイを含むLED装置において、
前記LEDダイは半導体層と透明絶縁基板が積層し、前記半導体層側にアノード及びカソード用の外部接続電極をそれぞれ一個ずつ有し、
透光性シートの下面に複数の前記透明絶縁基板を貼りつけるようにして前記LEDダイが配列し、
前記透光性シートの下面で隣接する前記LEDダイ同士の間隙に充填部材を備える
ことを特徴とするLED装置。
In an LED device including a plurality of LED dies in one package,
The LED die is formed by laminating a semiconductor layer and a transparent insulating substrate, and has one external connection electrode for each of an anode and a cathode on the semiconductor layer side,
The LED dies are arranged so that a plurality of the transparent insulating substrates are attached to the lower surface of the translucent sheet,
An LED device comprising a filling member in a gap between the LED dies adjacent to each other on the lower surface of the translucent sheet.
前記充填部材が白色反射部材であることを特徴とする請求項1に記載のLED装置。   The LED device according to claim 1, wherein the filling member is a white reflecting member. 前記充填部材が前記外部接続電極を除き前記LEDダイの底面を被覆していることを特徴とする請求項1又は2に記載のLED装置。   The LED device according to claim 1, wherein the filling member covers a bottom surface of the LED die except for the external connection electrode. 前記充填部材が透光性部材と白色反射部材とを含み、前記LEDダイの側面を前記透光性部材が被覆し、前記透光性部材の外周を前記白色反射部材が被覆していることを特徴とする請求項1又は3に記載のLED装置。   The filling member includes a translucent member and a white reflective member, the translucent member covers the side surface of the LED die, and the white reflective member covers the outer periphery of the translucent member. The LED device according to claim 1 or 3, characterized in that 底面に二つの前記LEDダイの外部接続電極同士を接続する配線を備えていることを特徴とする請求項1から4のいずれか一項に記載のLED装置。   5. The LED device according to claim 1, further comprising a wiring for connecting external connection electrodes of the two LED dies on the bottom surface. 6. 前記透光性シートは蛍光体シートであることを特徴とする請求項1から5のいずれか一項に記載のLED装置。   The LED device according to claim 1, wherein the translucent sheet is a phosphor sheet.
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