WO2016178397A1

WO2016178397A1 - Manufacturing method for optical semiconductor elements having phosphor layers and sealing layers

Info

Publication number: WO2016178397A1
Application number: PCT/JP2016/063216
Authority: WO
Inventors: 広希河野; 恭也大薮; 逸旻周
Original assignee: 日東電工株式会社
Priority date: 2015-05-01
Filing date: 2016-04-27
Publication date: 2016-11-10

Abstract

This manufacturing method for optical semiconductor elements having phosphor layers and sealing layers, comprises: an element arrangement step for arranging a plurality of optical semiconductor elements at one side in the thickness direction of a phosphor sheet so as to be spaced from one another; a first cutting step for cutting the phosphor sheet between the plurality of optical semiconductor elements so as to form gaps penetrating the phosphor sheet in the thickness direction, to form a plurality of phosphor layers corresponding to the plurality of optical semiconductor elements, respectively; a sheet forming step for forming a sealing sheet so as to fill the gaps and cover side surfaces of the optical semiconductor elements; and a second cutting step for cutting the sealing sheet in the thickness direction to form a plurality of sealing layers corresponding to the plurality of optical semiconductor elements and the plurality of phosphor layers, respectively.

Description

Method for manufacturing optical semiconductor element with phosphor layer-sealing layer

TECHNICAL FIELD The present invention relates to a method for producing a phosphor layer-encapsulating layer-attached optical semiconductor element, and more specifically, to a method for producing an optical semiconductor element, a phosphor layer, and a phosphor layer-encapsulating layer-attached optical semiconductor element. .

Conventionally, a light-emitting device including a light-emitting element, a wavelength conversion member that covers the upper surface of the light-emitting element, a side surface of the light-emitting element and a side surface of the wavelength conversion member, and a sealing member that contains a light-reflective material is known. ing.

In such a light emitting device, the light leaking from the side surface of the light emitting element and the side surface of the wavelength conversion member is reflected by the sealing member to improve the light emission efficiency.

The following method has been proposed as a method for manufacturing such a light emitting device (see, for example, Patent Document 1). That is, first, a plurality of light emitting elements are flip-chip mounted on a wiring board, and then each of a plurality of wavelength conversion members is laminated on each of the plurality of light emitting elements. Subsequently, the resin constituting the sealing member is screen-printed. Specifically, the resin is spread with a squeegee, and the surface of the sealing member is formed along the surface of the light emitting surface (surface) of the wavelength conversion member. Thereafter, the sealing member between the plurality of light emitting elements and between the plurality of wavelength conversion members is cut out by dicing.

International Publication 2009/069671

However, in the method described in Patent Document 1, since each of the plurality of wavelength conversion members is stacked one by one corresponding to each of the plurality of light emitting elements, a light emitting device can be manufactured with excellent manufacturing efficiency. There is a bug that you can not.

In the method described in Patent Document 1, the positional accuracy of the wavelength conversion member with respect to the light emitting element is likely to be lowered. Therefore, there is a problem that the light extraction efficiency in the light emitting device cannot be sufficiently improved.

An object of the present invention is to improve the positional accuracy of a phosphor layer with respect to an optical semiconductor element, and to produce an optical semiconductor element with a phosphor layer-sealing layer having excellent light extraction efficiency with excellent manufacturing efficiency. Another object of the present invention is to provide a method for producing an optical semiconductor element with a phosphor layer-sealing layer.

[1] The present invention provides an element arranging step of arranging a plurality of optical semiconductor elements on one side in the thickness direction of the phosphor sheet at intervals, and the phosphor sheet between the plurality of optical semiconductor elements, A first cutting step of forming each of the plurality of phosphor layers corresponding to each of the plurality of optical semiconductor elements by cutting so as to form a gap penetrating the phosphor sheet in the thickness direction; A sheet forming step for forming a stop sheet so as to fill the gap and cover a side surface of the optical semiconductor element; and cutting the sealing sheet along a thickness direction, and the plurality of optical semiconductors And a second cutting step of forming each of the plurality of sealing layers corresponding to each of the elements and each of the plurality of phosphor layers, and a phosphor layer-optical semiconductor device with a sealing layer It is a manufacturing method.

According to this method, in the first cutting step, the phosphor sheet between the plurality of optical semiconductor elements can be cut and the gap can be reliably formed with a desired dimension, so that the dimensional accuracy of the gap can be improved. Further, in the sheet forming step, the sealing sheet is filled in the gaps between the plurality of phosphor layers, and then in the second cutting step, the sealing sheet is surely cut to a desired size, so that the gap is filled. The dimensional accuracy of the sealing layer can be improved. Therefore, an optical semiconductor element with a phosphor layer-sealing layer that is excellent in light extraction efficiency can be manufactured.

In addition, this method is excellent in manufacturing efficiency because the phosphor sheet and the sealing sheet are cut.

[2] In the present invention, each of the plurality of optical semiconductor elements includes an electrode surface on which an electrode is provided, a light emitting surface facing the electrode surface and provided with a light emitting layer, and the electrode surface and the light emitting surface. The side surface connecting peripheral edges, and in the element arranging step, the light emitting surface is arranged on the phosphor sheet, and the sheet forming step fills the gap with the sealing sheet, and the side surface And an electrode surface covering step to be formed so as to cover the electrode surface, and a removing step of removing one end in the thickness direction of the sealing sheet to expose the electrode surface. The method for producing an optical semiconductor element with a phosphor layer-sealing layer according to [1] above.

According to this method, in the electrode surface covering step, the sealing sheet can be reliably filled in the gap, and the side surface of the optical semiconductor element can be reliably covered with the sealing sheet. Further, in the removing step, the electrode surface can be exposed and reliably connected to the substrate.

[3] The phosphor layer-sealing layer-attached optical semiconductor element according to the above [2], wherein in the removing step, the one surface in the thickness direction of the sealing sheet is wiped with a solvent in the removing step It is a manufacturing method.

According to this method, in the removing step, one end portion in the thickness direction of the sealing sheet can be easily removed.

[4] In the present invention, in the sheet forming step, the sealing sheet of the B stage is disposed so as to fill the gap and cover the side surface, after the sheet arranging step, and The method according to any one of [1] to [3], further comprising a C-stage forming step of converting the B-stage sealing sheet into a C-stage before the second cutting step. This is a method for producing an optical semiconductor element with a phosphor layer-sealing layer.

According to this method, the gap can be easily filled and the side surfaces can be easily covered with the B-stage sealing sheet in the sheet arranging step. Further, in the C-stage forming process, the B-stage sealing sheet is converted to the C-stage, and then the second cutting process is performed, so that the C-stage sealing sheet can be cut with excellent dimensional accuracy.

[5] In the present invention, both the first cutting step and the second cutting step are performed using a cutting blade, and in the first cutting step, the cutting blade is disposed on one side in the thickness direction of the phosphor sheet. The cutting blade is brought into contact with the phosphor sheet from one side in the thickness direction, and in the second cutting step, the cutting blade is arranged on one side in the thickness direction of the sealing sheet, and the cutting blade The method for producing an optical semiconductor element with a phosphor layer-sealing layer according to any one of the above [1] to [4], wherein the material is brought into contact with the sealing sheet from one side in the thickness direction Is the method.

According to this method, the contact direction of the cutting blade with respect to the phosphor sheet in the first cutting step and the contact direction of the cutting blade with respect to the sealing sheet in the second cutting step are the same direction. Therefore, the first cutting step and the second cutting step can be performed easily and uniformly.

[6] In the present invention, the optical semiconductor element and the phosphor layer are provided after the temporary fixing step of temporarily fixing the phosphor sheet to the temporary fixing sheet and the second cutting step before the element arranging step. And [1] to [5], further comprising: a phosphor layer including the sealing layer-a peeling step of peeling the optical semiconductor element with the sealing layer from the temporary fixing sheet. The method for producing a phosphor layer-sealing layer-attached optical semiconductor device according to the item.

According to this method, in the temporary fixing step, the phosphor sheet is temporarily fixed to the temporary fixing sheet, and then the element placement step is performed, and then the first cutting step and the second cutting step are sequentially performed. Therefore, each cutting process of a 1st cutting process and a 2nd cutting process can be reliably implemented with respect to each of the fluorescent substance sheet and the sealing sheet which were temporarily fixed to the temporarily fixing sheet. Therefore, a phosphor layer-sealing layer-attached optical semiconductor element including a phosphor layer and a sealing layer with excellent dimensional accuracy can be manufactured. As a result, it is possible to manufacture an optical semiconductor element with a phosphor layer-sealing layer that is more excellent in light extraction efficiency.

[7] The phosphor layer-light with sealing layer according to any one of [1] to [6], wherein the sealing sheet contains a light reflecting component. It is a manufacturing method of a semiconductor element.

According to this method, the light reflection component can be contained in the sealing layer, and therefore, the light emitted from the side surface of the optical semiconductor element can be reflected. Therefore, an optical semiconductor element with a phosphor layer-sealing layer that is more excellent in light extraction efficiency can be manufactured.

According to the present invention, an optical semiconductor element with a phosphor layer-sealing layer that is excellent in light extraction efficiency can be efficiently manufactured.

1A to 1D are process diagrams of a first embodiment of a method of manufacturing a phosphor layer-sealing layer-attached optical semiconductor device of the present invention. FIG. 1A is a temporary fixing process. FIG. 1B is an element placement process. FIG. 1C shows a first heating step, and FIG. 1D shows a first cutting step. 2E to 2G are process diagrams of the first embodiment of the method for manufacturing the optical semiconductor element with the phosphor layer-sealing layer of the present invention, following FIG. 1D, and FIG. FIG. 2G shows a removal process. 3H and FIG. 3I are process diagrams of the first embodiment of the method for manufacturing an optical semiconductor element with a phosphor layer-sealing layer of the present invention, following FIG. 2G, and FIG. 3H is a second cutting process, 3I shows a peeling step, and FIG. 3J shows a step of manufacturing an optical semiconductor device using the optical semiconductor element with phosphor layer-sealing layer shown in FIG. 3I. FIGS. 4A to 4C are a part of process diagrams of the second embodiment of the method for manufacturing a phosphor layer-sealing layer-attached optical semiconductor device of the present invention, FIG. 4A is a sheet arrangement process, and FIG. 4B is a removal process. Process drawing 4C shows a C-staging process. 5A and 5A are process diagrams of a third embodiment of the method for manufacturing a phosphor layer-sealing layer-attached optical semiconductor device of the present invention. FIG. 5A is a first cutting process, and FIG. 5B is a sheet arrangement. A process is shown. 6C and 6D are process diagrams of the third embodiment of the method for manufacturing the optical semiconductor element with the phosphor layer-sealing layer of the present invention, following FIG. 5B, and FIG. 6D shows a removal process. FIG. 7E and FIG. 7F are process diagrams of the third embodiment of the method for manufacturing an optical semiconductor element with a phosphor layer-sealing layer of the present invention, following FIG. 6D, and FIG. 7F shows a peeling process, and FIG. 7G shows a process for manufacturing an optical semiconductor device using the optical semiconductor element with phosphor layer-sealing layer shown in FIG. 7F.

In FIG. 1A to FIG. 3J, the vertical direction of the paper surface is the vertical direction (first direction, one example of the thickness direction), the upper side of the paper surface is the upper side (one side in the first direction, the one thickness direction), and the lower side of the paper surface is the lower side ( The other side in the first direction and the other side in the thickness direction). The left and right direction on the paper surface is the left and right direction (second direction orthogonal to the first direction), the left side on the paper surface is the left side (second side in the second direction), and the right side on the paper surface is the right side (the other side in the second direction). The paper thickness direction is the front-rear direction (the third direction orthogonal to the first direction and the second direction), the front side of the paper is the front side (one side in the third direction), and the back side of the paper is the rear side (the other side in the third direction). is there. Specifically, it conforms to the direction arrow in each figure.

<First Embodiment>
The first embodiment of the method for producing a phosphor layer-sealing layer-attached optical semiconductor device of the present invention includes a temporary fixing step (see FIG. 1A), an element placement step (see FIG. 1B), and a first heating step (FIG. 1). 1C), a first cutting step (see FIG. 1D), a sheet placement step (see FIG. 2E) as an example of an electrode surface covering step, a C-staging step (see FIG. 2F), and a removal step (FIG. 2G). Reference), a second cutting step (see FIG. 3H), and a peeling step (see FIG. 3I). In the first embodiment, a temporary fixing step, an element placement step, a first heating step, a first cutting step, a sheet placement step, a C-staging step, a removal step, a second cutting step, A peeling process is implemented in order. Hereinafter, each process is explained in detail.

1. Temporary Fixing Step As shown in FIG. 1A, in order to perform the temporary fixing step, first, a temporary fixing sheet 2 is prepared, and then the phosphor sheet 3 is temporarily fixed to the surface of the temporary fixing sheet 2.

The temporary fixing sheet 2 includes a support plate 4 and a pressure-sensitive adhesive layer 5 disposed on the support plate 4. The temporary fixing sheet 2 preferably includes only the support plate 4 and the pressure-sensitive adhesive layer 5.

The support plate 4 has a layer (flat plate) shape that is continuous in the front-rear direction and the left-right direction. The support plate 4 is made of, for example, a hard material. Examples of such materials include glass, ceramics, and various metals. The support plate 4 may be a polymer film such as a polyolefin film (such as a polyethylene film) or a polyester film (such as PET). The thickness of the support plate 4 is, for example, 1 μm or more, preferably 10 μm or more, and for example, 2,000 μm or less, preferably 1,000 μm or less.

The pressure sensitive adhesive layer 5 is disposed on the upper surface of the support plate 4. The pressure-sensitive adhesive layer 5 has a sheet shape on the upper surface of the support plate 4. The pressure sensitive adhesive layer 5 is formed from, for example, a pressure sensitive adhesive having excellent heat resistance. The thickness of the pressure-sensitive adhesive layer 5 is, for example, 1 μm or more, preferably 10 μm or more, and for example, 1,000 μm or less, preferably 500 μm or less. The length in the front-rear direction and the length in the left-right direction of the pressure-sensitive adhesive layer 5 are smaller than or equal to those of the support plate 4.

In order to temporarily fix the phosphor sheet 3 to the surface of the temporarily fixing sheet 2, first, the phosphor sheet 3 is prepared. As shown by the phantom lines in FIG. 1A, the phosphor sheet 3 is provided on the phosphor member 7.

The phosphor member 7 includes a first release sheet 6 and a phosphor sheet 3 supported by the first release sheet 6. Preferably, the phosphor member 7 includes only the first release sheet 6 and the phosphor sheet 3.

The first release sheet 6 has a layer (flat plate) shape continuous in the front-rear direction and the left-right direction. The first release sheet 6 is made of, for example, a flexible material. Examples of such a material include polymers such as polyolefin (polyethylene and the like) and polyester film (PET and the like). The first release sheet 6 may be a glass plate, a ceramic sheet, or various metal foils. The thickness of the 1st peeling sheet 6 is 1 micrometer or more, for example, Preferably, it is 10 micrometers or more, for example, is 2,000 micrometers or less, Preferably, it is 1,000 micrometers or less.

The phosphor sheet 3 is disposed on the lower surface of the first release sheet 6 and has a layer (flat plate) shape that is continuous in the front-rear direction and the left-right direction. The phosphor sheet 3 is formed from, for example, a B-stage phosphor composition containing a phosphor and a curable resin. The phosphor composition is preferably composed of a phosphor and a curable resin.

The phosphor converts the wavelength of light emitted from the optical semiconductor element 10 (see FIG. 1B). Examples of the phosphor include a yellow phosphor that can convert blue light into yellow light, and a red phosphor that can convert blue light into red light.

Examples of the yellow phosphor include silicate phosphors such as (Ba, Sr, Ca) ₂ SiO ₄ ; Eu, (Sr, Ba) ₂ SiO ₄ : Eu (barium orthosilicate (BOS)), for example, Y ₃ Al Garnet-type phosphors having a garnet-type crystal structure such as ₅ O ₁₂ : Ce (YAG (yttrium, aluminum, garnet): Ce), Tb ₃ Al ₃ O ₁₂ : Ce (TAG (terbium, aluminum, garnet): Ce) Examples thereof include oxynitride phosphors such as Ca-α-SiAlON.

Examples of the red phosphor include nitride phosphors such as CaAlSiN ₃ : Eu and CaSiN ₂ : Eu.

The phosphor is preferably a yellow phosphor, more preferably a garnet phosphor.

Examples of the shape of the phosphor include a spherical shape, a plate shape, and a needle shape.

The average value of the maximum length of the phosphor (in the case of a sphere, the average particle diameter) is, for example, 0.1 μm or more, preferably 1 μm or more, and for example, 200 μm or less, preferably 100 μm or less. But there is.

Fluorescent substances can be used alone or in combination.

The blending ratio of the phosphor is, for example, 5% by mass or more, preferably 10% by mass or more, and for example, 80% by mass or less, preferably 70% by mass or less with respect to the phosphor composition.

The curable resin is a matrix in which the phosphor is uniformly dispersed in the phosphor composition, and can be in a B-stage state, so that the phosphor sheet 3 is bonded to the pressure-sensitive adhesive layer 5 and the optical semiconductor element 10. Examples thereof include curable resins that are pressure-sensitively bonded to (see FIG. 1B). Examples of the curable resin include a thermosetting resin and an active energy ray curable resin, and a thermosetting resin is preferable.

Examples of the thermosetting resin include a two-stage reaction curable resin and a one-stage reaction curable resin.

The two-stage reaction curable resin has two reaction mechanisms. In the first stage reaction, the A stage state is changed to the B stage (semi-cured), and then in the second stage reaction, the B stage state is obtained. To C-stage (complete curing). That is, the two-stage reaction curable resin is a thermosetting resin that can be in a B-stage state under appropriate heating conditions. The B stage state is a state between the A stage state where the thermosetting resin is in a liquid state and the fully cured C stage state, and curing and gelation proceed slightly, and the compression elastic modulus is C stage. A semi-solid or solid state that is smaller than the elastic modulus of the state.

The first-stage reaction curable resin has one reaction mechanism, and can be C-staged (completely cured) from the A-stage state by the first-stage reaction. Such a one-stage reaction curable resin can stop the reaction in the middle of the first-stage reaction and change from the A-stage state to the B-stage state. It is a thermosetting resin that can be C-staged (completely cured) from the B-stage state when the reaction is resumed. That is, such a thermosetting resin is a thermosetting resin that can be in a B-stage state. Therefore, the first-stage reaction curable resin cannot be controlled to stop in the middle of the first-stage reaction, that is, cannot enter the B-stage state, and is changed from the A-stage state to the C-stage (completely cured). ) Does not contain curable resin.

In short, the thermosetting resin is a thermosetting resin that can be in a B-stage state.

Examples of the thermosetting resin include silicone resin, epoxy resin, urethane resin, polyimide resin, phenol resin, urea resin, melamine resin, and unsaturated polyester resin. As a thermosetting resin, Preferably, a silicone resin and an epoxy resin are mentioned, More preferably, a silicone resin is mentioned.

The above-mentioned thermosetting resin may be the same type or a plurality of types.

Examples of the silicone resin include silicone resin compositions such as an addition reaction curable silicone resin composition and a condensation / addition reaction curable silicone resin composition from the viewpoint of transparency, durability, heat resistance, and light resistance. Preferably, an addition reaction curable silicone resin composition is used. Silicone resins may be used alone or in combination.

The addition reaction curable silicone resin composition is a one-stage reaction curable resin composition and contains, for example, an alkenyl group-containing polysiloxane, a hydrosilyl group-containing polysiloxane, and a hydrosilylation catalyst. The addition reaction curable silicone resin composition is preferably an alkenyl group-containing polysiloxane which may contain a phenyl group in the molecule (for example, vinyl group-containing diphenylsiloxane, vinyl group-containing methylphenylsiloxane and vinyl group-containing dimethyl). Vinyl group-containing polysiloxane containing siloxane as a monomer) and hydrosilyl group-containing polysiloxane which may contain a phenyl group in the molecule (for example, hydrosilyl group-containing diphenylsiloxane, hydrosilyl group-containing methylphenylsiloxane and hydrosilyl group-containing) And a phenyl silicone resin composition containing a hydrosilyl group-containing polysiloxane containing dimethylsiloxane as a monomer and a hydrosilylation catalyst. However, in the phenyl silicone resin composition, at least one of the alkenyl group-containing polysiloxane and the hydrosilyl group-containing polysiloxane contains a phenyl group. In addition, the refractive index of a phenyl-type silicone resin composition is 1.45 or more, for example, Furthermore, it is 1.50 or more.

The above-mentioned addition reaction curable silicone resin composition is prepared and used as an A stage (liquid) state by first blending an alkenyl group-containing polysiloxane, a hydrosilyl group-containing polysiloxane, and a hydrosilylation catalyst.

The addition reaction curable silicone resin composition undergoes a hydrosilylation addition reaction between the alkenyl group and / or cycloalkenyl group of the alkenyl group-containing polysiloxane and the hydrosilyl group of the hydrosilyl group-containing polysiloxane by heating under a desired condition, and then The hydrosilylation addition reaction stops once. As a result, the A stage state can be changed to the B stage (semi-cured) state.

Thereafter, the addition reaction curable silicone resin composition is completed by restarting the hydrosilylation addition reaction described above by further heating under desired conditions. As a result, the B stage state can be changed to the C stage (fully cured) state.

The condensation / addition reaction curable silicone resin composition is a two-stage reaction curable resin, and specifically, for example, those described in JP 2010-265436 A, JP 2013-187227 A, and the like. 1 to 8 condensation / addition reaction curable silicone resin compositions, for example, JP 2013-091705 A, JP 2013-001815 A, JP 2013-001814 A, JP 2013-001813 A, Examples thereof include a cage-type octasilsesquioxane-containing silicone resin composition described in JP2012-102167A. The condensation / addition reaction curable silicone resin composition is solid and has both thermoplasticity and thermosetting properties.

The above-mentioned thermosetting resin is in a solid state at least when it is in the B stage (semi-cured) state. And such a thermosetting resin has both thermoplasticity and thermosetting property. That is, the thermosetting resin is once plasticized by heating and then completely cured. More specifically, the thermosetting resin gradually decreases in viscosity as the temperature rises, and then gradually increases as the temperature rises.

The blending ratio of the thermosetting resin is the balance of the blending ratio of the phosphor (and the light reflection component and / or additive described below).

The fluorescent composition can contain a light reflection component (described later) and / or an additive in an appropriate ratio.

In this method, first, the phosphor member 7 is prepared. Specifically, first, a fluorescent composition is prepared. In order to prepare the fluorescent composition, a varnish of the fluorescent composition is prepared by blending the above-described phosphor, a thermosetting resin, and a light reflection component and / or additive blended as necessary. Subsequently, the varnish is applied to the surface of the first release sheet 6. Thereafter, the fluorescent composition is heated (baked).

The heating (baking) condition is appropriately set so that the storage shear modulus G ′ in the dynamic viscoelasticity measurement in the phosphor sheet 3 is in a desired range.

That is, the heating temperature is appropriately set depending on the composition of the thermosetting resin in the fluorescent composition, and specifically, for example, 50 ° C. or higher, preferably 70 ° C. or higher, and for example, 120 ° C. or lower, preferably Is 100 ° C. or lower.

The heating time is, for example, 2.5 minutes or more, preferably 5.5 minutes or more, and for example, 4 hours or less, preferably 1 hour or less.

Thereby, the phosphor sheet 3 in the B stage state is formed on the surface of the first release sheet 6.

And the curve which shows the relationship between the storage shear elastic modulus G 'and temperature T which are obtained by carrying out the dynamic viscoelasticity measurement of such a fluorescent substance sheet 3 on conditions with a frequency of 1 Hz and a temperature increase rate of 20 degreeC / min. And having a minimum value, the temperature T at such a minimum value is in the range of 40 ° C. or more and 200 ° C. or less, and the storage shear modulus G ′ at the above-mentioned minimum value is, for example, 1,000 Pa or more, preferably Is in the range of 10,000 Pa or more, more preferably 20,000 Pa or more, further preferably 30,000 Pa or more, and for example, 90,000 Pa or less, preferably 70,000 Pa or less.

The phosphor sheet 3 has a fine tack property (pressure-sensitive adhesive property).

The thickness of the phosphor sheet 3 is, for example, 40 μm or more, preferably 50 μm or more, and, for example, 500 μm or less, preferably 300 μm or less.

Next, the phosphor sheet 3 of the phosphor member 7 is transferred to the temporarily fixed sheet 2. Specifically, the lower surface of the phosphor sheet 3 is brought into contact with the upper surface of the pressure-sensitive adhesive layer 5, and then the first release sheet 6 is peeled from the phosphor sheet 3. Thereby, the phosphor sheet 3 is temporarily fixed to the temporary fixing sheet 2.

2. Element Arrangement Step As shown in FIG. 1B, in the element arrangement step, a plurality of optical semiconductor elements 10 are arranged on the upper surface (an example of one side surface in the thickness direction) of the phosphor sheet 3 with an interval between each other.

In the element arranging step, first, a plurality of optical semiconductor elements 10 are prepared.

The optical semiconductor element 10 is, for example, an LED or LD that converts electrical energy into light energy. Preferably, the optical semiconductor element 10 is a blue LED (light emitting diode element) that emits blue light. On the other hand, the optical semiconductor element 10 does not include a rectifier (semiconductor element) such as a transistor having a technical field different from that of the optical semiconductor element.

The optical semiconductor element 10 has a substantially flat plate shape along the front-rear direction and the left-right direction. The optical semiconductor element 10 has a substantially rectangular shape in plan view. The optical semiconductor element 10 has an electrode surface 11, a light emitting surface 12, and a peripheral side surface 13 as an example of a side surface.

The electrode surface 11 is the upper surface of the optical semiconductor element 10 and the surface on which the electrode 14 is formed. The electrode 14 has a shape that slightly protrudes upward from the electrode surface 11.

The light emitting surface 12 is the lower surface of the optical semiconductor element 10, and is opposed to the electrode surface 11 with a gap therebetween. The light emitting surface 12 has a flat shape. The light emitting surface 12 is provided with a light emitting layer 9 disposed below the optical semiconductor element 10.

The peripheral side surface 13 connects the peripheral edge of the electrode surface 11 and the peripheral edge of the light emitting surface 12.

The dimensions of the optical semiconductor element 10 are appropriately set. Specifically, the thickness (height) T0 is, for example, 0.1 μm or more, preferably 0.2 μm or more, and, for example, 500 μm or less. The thickness is preferably 200 μm or less. The length L1 in the front-rear direction and / or the left-right direction of the optical semiconductor element 10 is, for example, 0.2 mm or more, preferably 0.5 mm or more, and, for example, 3.00 mm or less, preferably 2.00 mm. It is as follows.

In the element arranging step, as shown in FIG. 1B, a plurality of optical semiconductor elements 10 are arranged on the phosphor sheet 3 at intervals in the front-rear direction and the left-right direction. Specifically, the light emitting surfaces 12 of the plurality of optical semiconductor elements 10 are pressure-sensitively bonded to the upper surface of the phosphor sheet 3 so as to ensure the interval L0 and the pitch L2 described below. Further, the plurality of optical semiconductor elements 10 are pressure-sensitive bonded to the phosphor sheet 3 so that the electrodes 14 face upward.

The interval (interval in the front-rear direction and / or left-right direction) L0 between the optical semiconductor elements 10 adjacent to each other is, for example, 0.05 mm or more, preferably 0.1 mm or more, and, for example, 1.50 mm or less. Preferably, it is 0.80 mm or less. The pitch L2 of the optical semiconductor elements 10 adjacent to each other, specifically, the sum (L1 + L0) of the length L1 and the interval L0 described above is, for example, 0.25 mm or more, preferably 0.60 mm or more. For example, it is 3.00 mm or less, preferably 2.00 mm or less.

Thereby, the plurality of optical semiconductor elements 10 are supported on the phosphor sheet 3. A first gap 15 is formed between the optical semiconductor elements 10 adjacent to each other.

The first gap 15 has a dimension corresponding to the distance L0 and is not shown in FIG. 1B, but has a substantially grid shape in plan view. From the first gap 15, the upper surface of the phosphor sheet 3 is exposed.

3. First Heating Step As shown in FIG. 1C, in the first heating step, the temporary fixing sheet 2, the phosphor sheet 3, and the plurality of optical semiconductor elements 10 are placed in, for example, an oven 17 and heated. Thereby, the fluorescent composition of the phosphor sheet 3 is C-staged (completely cured).

The heating temperature is, for example, 100 ° C. or higher, preferably 120 ° C. or higher, and for example, 200 ° C. or lower, preferably 160 ° C. or lower. The heating time is, for example, 10 minutes or longer, preferably 30 minutes or longer, and for example, 480 minutes or shorter, preferably 300 minutes or shorter. Note that the heating can be performed a plurality of times at different temperatures.

This cures the thermosetting resin (C stage). That is, the thermosetting resin is completely reacted to produce a product.

In particular, in the reaction of the silicone resin composition (C-stage reaction), the hydrosilyl addition reaction between the alkenyl group of the alkenyl group-containing polysiloxane and the hydrosilyl group of the hydrosilyl group-containing polysiloxane is further accelerated. Thereafter, the alkenyl group or the hydrosilyl group disappears and the hydrosilyl addition reaction is completed, whereby a C-stage silicone resin composition, that is, a product (or a cured product) is obtained. That is, by completing the hydrosilylation reaction, the silicone resin composition exhibits curability (specifically, thermosetting).

Thereby, the light emitting surface 12 of the optical semiconductor element 10 adheres to the upper surface of the phosphor sheet 3. The light emitting surface 12 is in direct contact with the upper surface of the phosphor sheet 3. That is, the optical semiconductor element 10 is fixed to the phosphor sheet 3.

4). 1st cutting process As shown to FIG. 1D, the fluorescent substance sheet 3 between the some optical semiconductor elements 10 is cut | disconnected so that the 2nd clearance gap 16 as an example of a clearance gap may be formed.

That is, the phosphor sheet 3 exposed from the first gap 15 is cut. In order to cut the phosphor sheet 3, for example, a cutting device including a cutting blade, for example, a cutting device including a laser irradiation source is used.

As a cutting device provided with a cutting blade, for example, a dicing device provided with a disc-shaped dicing saw (dicing blade) 18, for example, a cutting device provided with a cutter may be mentioned.

Examples of the cutting device provided with a laser irradiation source include a laser irradiation device.

Preferably, a cutting device provided with a cutting blade, more preferably a dicing device is used. The blade thickness T1 of the dicing saw 18 is the same from the radially inner side to the outer side. The blade thickness T1 of the dicing saw 18 is, for example, 10 μm or more, preferably 20 μm or more, and for example, 700 μm or less, preferably 500 μm or less.

In order to cut the phosphor sheet 3 with a cutting device (preferably a dicing device) having a cutting blade, first, the temporary fixing sheet 2, the phosphor sheet 3 and the plurality of optical semiconductor elements 10 are diced by the phosphor sheet 3. It is installed in the cutting device so as to face the saw 18. Subsequently, a cutting blade (preferably a dicing saw 18) is brought into contact with the phosphor sheet 3 from the upper side of the phosphor sheet 3. That is, the cutting blade (dicing saw 18) is lowered and the lower end portion of the cutting blade (dicing saw 18) is applied to the upper surface of the phosphor sheet 3. Subsequently, the lower end of the cutting blade (dicing saw 18) reaches the lower surface of the phosphor sheet 3 so that the lower end of the cutting blade (dicing saw 18) penetrates the phosphor sheet 3 in the thickness direction. Next, the phosphor sheet 3 is moved along the front-rear direction. Thereafter, the cutting blade (dicing saw 18) is raised. Subsequently, the same operation as described above is performed along the left-right direction. Note that the phosphor sheet 3 can be cut in the left-right direction and in the front-rear direction in order.

In the first cutting step, as shown in FIG. 1D, the lower end of the cutting blade (dicing saw 18) reaches the lower surface of the phosphor sheet 3 and contacts the upper surface of the pressure-sensitive adhesive layer 5. It does not penetrate deeply into the pressure bonding layer 5.

Thereby, a second gap 16 having a substantially grid-like shape in plan view along the front-rear direction and the left-right direction (substantially a cross-girder shape, not shown in FIG. 1D) is formed. Further, the second gap 16 passes through the thickness direction of the phosphor sheet 3. The second gap 16 communicates with the first gap 15 in the thickness direction. The second gap 16 has a size included in the first gap 15 when projected in the thickness direction. Specifically, the second gap 16 has a smaller size than the first gap 15. The width L4 of the second gap 16 corresponds to the size of the cutting device, specifically the cutting blade, preferably the dicing saw 18 (specifically, the blade thickness T1). Is, for example, 95% or less, preferably 90% or less, and, for example, 5% or more with respect to L0 (the width of the first gap 15). Specifically, the width L4 of the second gap 16 is, for example, 10 μm or more, preferably 20 μm or more, and, for example, 700 μm or less, preferably 500 μm or less.

Thereby, the pressure-sensitive adhesive layer 5 is exposed from the second gap 16.

Moreover, the phosphor sheet 3 forms a plurality of phosphor layers 24 by forming the second gap 16. That is, each of the plurality of phosphor layers 24 corresponds to each of the plurality of optical semiconductor elements 10, and specifically, is formed on the lower surface of each of the plurality of optical semiconductor elements 10. Each of the plurality of phosphor layers 24 has a substantially rectangular shape in plan view including the optical semiconductor element 10 when projected in the thickness direction. The phosphor layer 24 has a side surface 22 that faces the second gap 16.

5. Sheet Arrangement Step As shown in FIG. 2E, in the sheet arrangement step, the B-stage sealing sheet 19 is arranged so as to fill the second gap 16 and cover the peripheral side surface 13.

In this sheet arranging step, first, a B-stage sealing sheet 19 is prepared. As shown in FIG. 2E, the sealing sheet 19 is provided on the sealing member 21.

The sealing member 21 includes a second release sheet 20 and a sealing sheet 19 supported by the second release sheet 20. Preferably, the sealing member 21 includes only the second release sheet 20 and the sealing sheet 19.

The second release sheet 20 is made of the same material as the support plate 4 described above and has a layer (flat plate) shape that is continuous in the front-rear direction and the left-right direction. The thickness of the 2nd peeling sheet 20 is 1 micrometer or more, for example, Preferably, it is 10 micrometers or more, for example, is 2,000 micrometers or less, Preferably, it is 1,000 micrometers or less.

The sealing sheet 19 is formed on the lower surface of the second release sheet 20 and has a layer (flat plate) shape that is continuous in the front-rear direction and the left-right direction. The sealing sheet 19 is prepared from, for example, a B-stage sealing composition containing a curable resin.

The curable resin is the same as the curable resin exemplified for the fluorescent composition.

Moreover, the sealing composition can further contain, for example, a light reflection component.

Examples of the light reflecting component include light reflecting particles such as inorganic particles and organic particles.

As the inorganic particles, for example, oxides such as titanium oxide, zinc oxide, zirconium oxide, composite inorganic oxide particles (glass and the like), for example, lead white (basic lead carbonate), carbonates such as calcium carbonate, for example, Examples include clay minerals such as kaolin. Preferably, an oxide is used.

Examples of the organic particles include acrylic resin particles, styrene resin particles, acrylic-styrene resin particles, silicone resin particles, polycarbonate resin particles, benzoguanamine resin particles, polyolefin resin particles, polyester resin particles, and polyamides. Resin particles, polyimide resin particles, and the like. Preferably, acrylic resin particles are used.

The content ratio of the light reflection component is, for example, 1% by mass or more, preferably 3% by mass or more, and, for example, 80% by mass or less, preferably 75% by mass or less with respect to the sealing composition. is there.

In addition, the sealing composition may contain an additive in an appropriate ratio.

In order to form the sealing sheet 19, for example, first, a curable resin and a light reflection component and / or an additive that are added as necessary are blended to prepare a varnish of the sealing composition. Subsequently, the varnish is applied to the surface of the second release sheet 20. Thereafter, the sealing composition is B-staged (semi-cured). Specifically, the sealing composition is heated.

The heating temperature is, for example, 50 ° C. or more, preferably 70 ° C. or more, and for example, 120 ° C. or less, preferably 100 ° C. or less. The heating time is, for example, 5 minutes or more, preferably 10 minutes or more, and for example, 20 minutes or less, preferably 15 minutes or less.

Thereby, the sealing sheet 19 is formed. Preferably, the B-stage sealing sheet 19 is formed on the surface of the sealing sheet 19.

The melt viscosity at 60 ° C. of the sealing sheet 19 is, for example, 40 Pa · s or more, for example, 1,000 Pa · s or less, preferably 300 Pa · s or less. The melt viscosity is measured using an E-type viscometer.

Next, in the sheet arranging step, as shown by the arrow in FIG. 2E, the B-stage sealing sheet 19 is pressure-bonded to the temporary fixing sheet 2, the phosphor sheet 3, and the plurality of optical semiconductor elements 10 (compression molding). ).

Specifically, the temporary fixing sheet 2, the phosphor sheet 3 and the plurality of optical semiconductor elements 10 and the sealing member 21 are pressed so that the sealing sheet 19 and the optical semiconductor element 10 face each other in the thickness direction. Set them in the machine and hot press them, for example.

The temperature of the hot press is 60 ° C. or higher, preferably 70 ° C. or higher, and 200 ° C. or lower, preferably 180 ° C. or lower. The pressure of the hot press is, for example, 0.01 MPa or more, preferably 0.10 MPa or more, and for example, 10.00 MPa or less, preferably 5.00 MPa or less. The time for hot pressing is, for example, 1 minute or more, preferably 3 minutes or more, and for example, 60 minutes or less, preferably 30 minutes or less. Moreover, the hot press can be performed a plurality of times.

The first gap 15 and the second gap 16 are filled with the sealing sheet 19 (sealing composition) by this hot pressing.

Since the sealing sheet 19 is filled in the second gap 16, it covers the peripheral side surface 13 and the electrode surface 11 of the optical semiconductor element 10. The sealing sheet 19 embeds the electrode 14 and covers the side surface and the upper surface of the electrode 14.

Furthermore, since the sealing sheet 19 is filled in the first gap 15, the side surface 22 is covered.

Such a sealing sheet 19 has a flat upper surface 23 along the front-rear direction and the left-right direction. The upper surface 23 is spaced above the upper surface of the electrode 14 with a gap therebetween.

Thereafter, the second release sheet 20 is peeled from the sealing sheet 19.

6). C-Stage Process As shown in FIG. 2F, in the C-stage process, the B-stage sealing sheet 19 is converted to the C-stage.

Specifically, when the curable resin of the sealing sheet 19 is a thermosetting resin, the sealing sheet 19 is heated to be cured (completely cured). In order to heat the sealing sheet 19, for example, the temporarily fixing sheet 2, the phosphor layer 24, the optical semiconductor element 10, and the sealing sheet 19 are put into the oven 17.

The heating temperature is, for example, 100 ° C. or more, preferably 120 ° C. or more, and for example, 200 ° C. or less, preferably 150 ° C. or less. The heating time is, for example, 10 minutes or more, preferably 30 minutes or more, and for example, 180 minutes or less, preferably 120 minutes or less.

7). Removal Step As shown in FIG. 2G, in the removal step, the upper end portion (an example of one end portion in the thickness direction) of the sealing sheet 19 is removed.

In order to remove the upper end portion of the sealing sheet 19, first, the upper surface 23 of the sealing sheet 19 is wiped with a solvent.

As the solvent, for example, a solvent capable of completely or partially dissolving the C-stage sealing sheet 19 (sealing composition) is selected. Specifically, examples of the solvent include organic solvents and aqueous solvents. Examples of the organic solvent include alcohols such as methanol and ethanol, ketones such as acetone and methyl ethyl ketone, aliphatic hydrocarbons such as hexane, aromatic hydrocarbons such as toluene, and ethers such as tetrahydrofuran. Is mentioned. Examples of the aqueous solvent include water. The solvent is preferably an organic solvent, more preferably an alcohol or an aromatic hydrocarbon, and still more preferably an alcohol.

In order to wipe the upper surface 23 of the sealing sheet 19 with a solvent, the solvent is absorbed by the cloth, and the upper surface 23 of the sealing sheet 19 is wiped with the cloth.

Thereby, the upper end portion of the sealing sheet 19 is removed. Specifically, the portion of the sealing sheet 19 that was located immediately above the electrode surface 11 of the optical semiconductor element 10 is removed. More specifically, in the sealing sheet 19, a portion that covers the electrode surface 11 and covers the upper surface and the side surface of the electrode 14 and a portion that is located above the first gap 15 are removed.

Then, the upper surface and the side surface of the electrode 14 are exposed, and then the electrode surface 11 is exposed.

Thereby, the sealing sheet 19 is not disposed immediately above the electrode surface 11 of the optical semiconductor element 10, but is filled in the first gap 15 and the second gap 16, and the side surfaces 22 of the plurality of phosphor layers 24, It forms in the pattern which coat | covers each peripheral side surface 13 of the some optical semiconductor element 10. FIG. The upper surface 23 of the sealing sheet 19 is flush with the electrode surface 11 (electrode surface 11 exposed from the electrode 14) of the optical semiconductor element 10 in the front-rear direction and the left-right direction. That is, the upper surface 23 of the sealing sheet 19 and the electrode surface 11 of the optical semiconductor element 10 form the same plane along the front-rear direction and the left-right direction. The electrode 14 protrudes upward from the plane described above.

The above-described sheet arranging step (see FIG. 2E), C-stage forming step (see FIG. 2F), and removing step (see FIG. 2G) are included in the sheet forming step of the present invention. That is, the sheet forming step is a step of forming the sealing sheet 19 so as to fill the second gap 16 and cover the peripheral side surface 13 of the optical semiconductor element 10. The sheet forming step is also a step of forming the sealing sheet 19 from which the upper end portion is removed by converting the sealing sheet 19 into a C stage (completely cured).

8). Second Cutting Step As shown in FIG. 3H, in the second cutting step, the sealing sheet 19 is cut along the thickness direction.

In the second cutting step, the sealing sheet 19 filled in the first gap 15 and the second gap 16 is cut. Thereby, each of the plurality of sealing layers 25 corresponding to each of the plurality of optical semiconductor elements 10 and each of the plurality of phosphor layers 24 is formed.

In the second cutting step, the same cutting device and method as those exemplified in the first cutting step described above are used. The blade thickness T2 of the dicing saw 27 is thinner than the blade thickness T1 of the dicing saw 18 in the first cutting step. For example, the blade thickness T1 is, for example, 95% or less, preferably 90% or less, more preferably. Is 80% or less and 5% or more. Further, the blade thickness T2 of the dicing saw 27 is the same from the radially inner side to the outer side. Specifically, the blade thickness T2 of the dicing saw 27 is, for example, 10 μm or more, preferably 20 μm or more, for example, 200 μm or less, preferably 100 μm or less. .

In the second cutting step, in order to cut the sealing sheet 19 with a cutting device (preferably a dicing device) provided with a cutting blade, first, the temporary fixing sheet 2, the phosphor sheet 3, the optical semiconductor element 10, and the sealing sheet 19 is installed in a cutting device, and then a cutting blade (preferably a dicing saw 27) is brought into contact with the sealing sheet 19 from the upper side of the sealing sheet 19. That is, the cutting blade (dicing saw 27) is lowered and the lower end portion of the cutting blade (dicing saw 27) is applied to the upper surface of the sealing sheet 19. Subsequently, the lower end portion of the cutting blade (dicing saw 27) is made to reach the lower surface of the sealing sheet 19 so that the lower end portion penetrates the sealing sheet 19 in the thickness direction. Subsequently, the sealing sheet 19 is moved along the front-rear direction. Thereafter, the cutting blade (dicing saw 27) is raised. Thereafter, the same operation as described above is performed along the left-right direction. In addition, with respect to the sealing sheet 19, the cutting | disconnection of the left-right direction and the cutting | disconnection of the front-back direction can also be implemented in order.

In the second cutting step, the lower end portion of the cutting blade (dicing saw 27) reaches the lower surface of the sealing sheet 19 and contacts the upper surface of the pressure-sensitive adhesive layer 5, but deeply in the pressure-sensitive adhesive layer 5. Do not enter.

Due to the cutting of the sealing sheet 19, the sealing sheet 19 is aligned in the front-rear direction and the left-right direction between the adjacent optical semiconductor elements 1 and between the adjacent phosphor layers 24. A gap 26 is formed. The third gap 26 penetrates the sealing sheet 19 in the thickness direction. Although not shown in FIG. 3H, the third gap 26 has a substantially grid pattern in plan view. The width W1 of the third gap 26 corresponds to a cutting device, specifically a cutting blade, preferably a blade thickness T2 of the dicing saw 27.

The width W1 of the third gap 26 is narrower than the width L4 (see FIG. 1D) of the second gap 16, and is, for example, 95% or less, preferably 90% or less, relative to the width L4 of the second gap 16. More preferably, it is 80% or less, and 5% or more. Specifically, the width W1 of the third gap 26 is, for example, 10 μm or more, preferably 20 μm or more, and for example, 200 μm or less, preferably 100 μm or less.

As shown in FIG. 3I, this allows one optical semiconductor element 10, one phosphor layer 24 covering the light emitting surface 12 of the optical semiconductor element 10, the side surface 22 of the phosphor layer 24, and the optical semiconductor element 10. A plurality of phosphor layer-sealing layer-attached optical semiconductor elements 1 each including one sealing layer 25 covering the peripheral side surface 13 are obtained in a state of being temporarily fixed to the temporary fixing sheet 2. In addition, as shown in FIG. 3H, the plurality of phosphor layer-sealing layer-attached optical semiconductor elements 1 are arranged in an arrangement spaced apart from each other in the front-rear direction and the left-right direction while temporarily fixed to the temporary fixing sheet 2. Has been.

9. Peeling Step As shown by the arrows in FIG. 3H, in the peeling step, the phosphor layer-sealing layer-attached optical semiconductor element 1 is peeled from the temporary fixing sheet 2. Specifically, the lower surface of the sealing layer 25 and the lower surface of the phosphor layer 24 are separated from the upper surface of the pressure-sensitive adhesive layer 5.

In order to peel the phosphor layer-sealing layer-attached optical semiconductor element 1 from the temporary fixing sheet 2, for example, a pickup device (not shown) including a collet and a suction pump connected thereto is used.

As a result, as shown in FIG. 3I, a phosphor layer-sealing layer-attached optical semiconductor device 1 including one optical semiconductor element 10, one phosphor layer 24, and one sealing layer 25 is obtained. Preferably, the phosphor layer-sealing layer-attached optical semiconductor element 1 includes only one optical semiconductor element 10, one phosphor layer 24, and one sealing layer 25.

In the phosphor layer-sealing layer-attached optical semiconductor element 1, the lower surface of the phosphor layer 24 and the lower surface of the sealing layer 25 are flush with each other in the front-rear direction and the left-right direction. The electrode surface 11 of the optical semiconductor element 10 is flush with the upper surface of the sealing layer 25 in the front-rear direction and the left-right direction. The peripheral side surface 13 of the optical semiconductor element 10 and the peripheral end portion and the side surface of the upper surface of the phosphor layer 24 are covered with a sealing layer 25.

The phosphor layer-sealing layer-attached optical semiconductor element 1 has the same planar view shape (specifically, substantially rectangular shape) as the planar view shape (specifically, the outer shape of a substantially rectangular frame shape) of the sealing layer 25. Shape) and external dimensions.

The sealing layer 25 has a shape and size in plan view larger than that of the phosphor layer 24. In the sealing layer 25, the width W3 of the portion located outside the phosphor layer 24 in plan view is, for example, 10 μm or more, preferably 50 μm or more, and for example, 600 μm or less, preferably 400 μm or less. is there. In the sealing layer 25, the distance W2 between the side surface 22 of the phosphor layer 24 and the peripheral side surface 13 of the optical semiconductor element 10 in a plan view is, for example, 1 μm or more, preferably 10 μm or more, and, for example, 500 μm or less. The thickness is preferably 300 μm or less. The width W4 of the portion located outside the optical semiconductor element 10 in the sealing layer 25 is the sum (W2 + W3) of W2 and W3, for example, 15 μm or more, preferably 50 μm or more, and, for example, 1000 μm or less. Preferably, it is 600 μm or less.

The phosphor layer-sealing layer-attached optical semiconductor element 1 is not the optical semiconductor device 30 (see FIG. 3J) described below, that is, does not include the substrate 28 provided in the optical semiconductor device 30. That is, in the optical semiconductor element 1 with the phosphor layer-sealing layer, the electrode 14 of the optical semiconductor element 10 is not electrically connected to the terminal 29 provided on the substrate 28. That is, the phosphor layer-sealing layer-attached optical semiconductor element 1 is a component of the optical semiconductor device 30, that is, a component for manufacturing the optical semiconductor device 30, and the component alone is distributed and can be used industrially. It is a device.

10. Production of Optical Semiconductor Device Thereafter, as shown in FIG. 3J, the electrode 14 of the optical semiconductor element 1 with phosphor layer-sealing layer is electrically connected to a terminal 29 provided on the upper surface of the substrate 28. More specifically, the phosphor layer-sealing layer-attached optical semiconductor element 1 is turned upside down and then flip-chip mounted on the substrate 28.

Thereby, an optical semiconductor device 30 including the phosphor layer-sealing layer-attached optical semiconductor element 1 and the substrate 28 is obtained. That is, the optical semiconductor device 30 includes the substrate 28, the optical semiconductor element 10 mounted on the substrate 28, the phosphor layer 24 disposed on the upper surface of the optical semiconductor element 10, the peripheral side surface 13 of the optical semiconductor element 10, and the fluorescence. And a sealing layer 25 that covers the side surface 22 of the body layer 24 and exposes the electrode surface 11 of the optical semiconductor element 10. Preferably, the optical semiconductor device 30 includes only the substrate 28, the optical semiconductor element 10, the phosphor layer 24, and the sealing layer 25. In the optical semiconductor device 30, the light emitting layer 9 is in contact with the phosphor layer 24. Further, the upper surface of the phosphor layer 24 is exposed upward from the sealing layer 25.

Although not shown in FIG. 3J, another sealing layer can be filled so that the electrode 14 and the terminal 29 are embedded between the sealing layer 25 and the phosphor layer 24 and the substrate 28. .

11. Action and Effect According to the above method, as shown in FIG. 1D, in the first cutting step, the phosphor sheet 3 between the plurality of optical semiconductor elements 10 is cut to form the second gap 16 with a desired dimension. Since it can form reliably, the dimensional accuracy of the 2nd clearance gap 16 can be improved. Further, in the sheet forming step, as shown in FIG. 2E, the sealing sheet 19 is filled into the second gap 16, and subsequently, in the second cutting step, as shown in FIG. Since it cuts reliably by a dimension, the dimensional accuracy of the sealing layer 25 with which the 2nd clearance gap 16 was filled can be improved. Therefore, the phosphor layer-sealing layer-attached optical semiconductor element 1 having excellent light extraction efficiency can be manufactured.

Further, this method is excellent in manufacturing efficiency because the phosphor sheet 3 and the sealing sheet 19 are cut as shown in FIGS. 1D and 3H.

In addition, according to this method, as shown in FIG. 2E, in the sheet arranging step, the sealing sheet 19 is surely filled into the second gap 16, and the sealing sheet 19 reliably secures the peripheral side surface 13 of the optical semiconductor element 10. Can be coated. Further, as shown in FIG. 2G, in the removing step, the electrode surface 11 can be exposed, and thereafter, as shown in FIG. 3J, it can be reliably electrically connected to the terminal 29 of the substrate 28.

Moreover, according to this method, as shown in FIG. 2G, in the removing step, the upper end portion of the sealing sheet 19 can be easily removed by wiping the upper surface of the sealing sheet 19 with a solvent.

Further, according to this method, as shown in FIG. 2E, the second gap 16 can be easily filled and the peripheral side surface 13 can be easily covered with the sealing sheet 19 of the B stage in the sheet arranging step. . Further, as shown in FIG. 2F, in the C-stage forming process, the B-stage sealing sheet 19 is converted to the C-stage, and then the second cutting process shown in FIG. Can be cut with excellent dimensional accuracy.

Moreover, according to this method, the contact direction of the cutting blade with respect to the phosphor sheet 3 in the first cutting step shown in FIG. 1D and the contact direction of the cutting blade with respect to the sealing sheet 19 in the second cutting step shown in FIG. Are the same direction, that is, the direction from the upper side to the lower side. Therefore, the first cutting step and the second cutting step can be performed easily and uniformly.

Further, according to this method, as shown in FIG. 1A, in the temporary fixing step, the phosphor sheet 3 is temporarily fixed to the temporary fixing sheet 2, and then the element placement step shown in FIG. 1B is performed. The first cutting step shown in FIG. 1D and the second cutting step shown in FIG. 3H are sequentially performed. Therefore, each cutting process of a 1st cutting process and a 2nd cutting process can be reliably implemented with respect to each of the fluorescent substance sheet 3 and the sealing sheet 19 which were temporarily fixed to the temporary fixing sheet 2. FIG. Therefore, the phosphor layer-sealing layer-attached optical semiconductor element 1 including the phosphor layer 24 having excellent dimensional accuracy and the sealing layer 25 having excellent dimensional accuracy can be manufactured.

Further, according to this method, the light reflection component can be contained in the sealing layer 25, so that the light emitted from the peripheral side surface 13 of the optical semiconductor element 10 can be reflected. Therefore, the phosphor layer-sealing layer-attached optical semiconductor element 1 having excellent light extraction efficiency can be manufactured.

12 In the first embodiment described above, in the first cutting step, as shown in FIG. 1D, the lower end portion of the cutting blade (dicing saw 18) does not enter the pressure-sensitive adhesive layer 5 deeply. Although not shown, the pressure-sensitive adhesive layer 5 can be penetrated deeply.

In the first embodiment described above, in the second cutting step, as shown in FIG. 3H, the lower end portion of the cutting blade (dicing saw 27) does not enter deeply into the pressure-sensitive adhesive layer 5. Although not shown, the pressure-sensitive adhesive layer 5 can be penetrated deeply.

In the first embodiment described above, the contact direction of the cutting blade with respect to the phosphor sheet 3 in the first cutting step shown in FIG. 1D (from the upper side to the lower side) and the sealing of the cutting blade in the second cutting step shown in FIG. 3H The contact direction with respect to the sheet 19 (from the upper side to the lower side) is the same direction, but is not limited to this and may be a different direction. For example, the contact direction of the cutting blade with respect to the phosphor sheet 3 in the first cutting step shown in FIG. 1D is changed from the upper side to the lower side, and the contact direction of the cutting blade with respect to the sealing sheet 19 in the second cutting step is changed from the lower side to the upper side. It can also be. In that case, as shown in FIG. 3H, in the second cutting step, the temporary fixing sheet 2 and the sealing sheet 19 are moved from the lower side to the upper side by the cutting blade (preferably the dicing saw 27). Cut in order. As a result, the sealing sheet 19 is cut together with the temporarily fixed sheet 2 into individual pieces.

Preferably, in the first embodiment, the contact direction of the cutting blade with respect to the phosphor sheet 3 in the first cutting step shown in FIG. 1D and the contact of the cutting blade with the sealing sheet 19 in the second cutting step shown in FIG. 3H. Make the direction the same.

When the two contact directions are different, it is necessary to dispose the cutting blades separately on the top and bottom of the phosphor sheet 3 and the sealing sheet 19, which complicates the manufacturing process. Further, since the temporarily fixing sheet 2 is cut, the handling property of the optical semiconductor element 1 with the phosphor layer-sealing layer may be lowered.

On the other hand, when the two contact directions are the same, the cutting blade has only to be arranged in one direction with respect to the phosphor sheet 3 and the sealing sheet 19, specifically, only on the upper side. Can be simplified. Further, since the temporarily fixed sheet 2 is not cut, it is possible to prevent the handling property of the temporarily fixed sheet 2 from being deteriorated.

In the first embodiment described above, as shown in FIG. 1B, the light emitting surface 12 of the optical semiconductor element 10 is brought into contact with the phosphor sheet 3 in the element arranging step, but the present invention is not limited to this. For example, although not shown, the electrode surface 11 of the optical semiconductor element 10 can be brought into contact with the phosphor sheet 3. In that case, although not shown, the light emitting surface 12 is exposed in the removing step (see FIG. 2G).

In the first embodiment described above, the upper surface 23 of the sealing sheet 19 is wiped with a solvent in the removing step shown in FIG. 2G. However, it is not limited to this. For example, the upper end portion of the sealing sheet 19 can be etched and grinded, for example. In addition, since grinding may damage the electrode 14, it is preferably etched.

More preferably, the upper surface 23 of the sealing sheet 19 is wiped with a solvent. According to this method, the upper end portion of the sealing sheet 19 can be removed, and the upper surface and the side surface of the electrode 14 can be reliably, quickly and easily exposed.

In addition, after wiping the upper surface 23 of the sealing sheet 19 with a solvent, when a desired upper end portion (specifically, a portion covering the upper surface and side surfaces of the electrode 14) remains in the sealing sheet 19 Furthermore, the upper end portion of the sealing sheet 19 can be removed by a pressure-sensitive adhesive sheet (not shown). Specifically, the pressure-sensitive adhesive sheet is pressure-bonded to the upper surface 23 of the sealing sheet 19 wiped with a solvent, and then the pressure-sensitive adhesive sheet is peeled off.

Alternatively, for example, the upper end portion of the sealing sheet 19 can be removed with a cloth such as a buff, for example, a brush or a polishing member such as a water blast.

In the first embodiment described above, as shown in FIG. 2E, in the sheet arranging step, the B-stage sealing sheet 19 provided in the sealing member 21 is compression-molded to form the first gap 15 and the second gap. 16 is filled. However, the sheet arrangement process is not limited to the above. For example, transfer molding may be performed using a B-stage sealing composition. Furthermore, the A-stage sealing composition varnish can be applied or dripped (potted) onto the temporary fixing sheet 2, the phosphor sheet 3, and the plurality of optical semiconductor elements 10. Of transfer molding, coating, and dropping, preferably, coating and dropping are used.

When using application and dripping, the A-stage varnish applied and dripped onto the temporary fixing sheet 2, the phosphor sheet 3, and the plurality of optical semiconductor elements 10 is made into a B-stage to form the sealing sheet 19. .

In the first embodiment described above, the sheet placement step (see FIG. 2E) and the removal step (see FIG. 2G) are performed. For example, without performing the sheet placement step (see FIG. 2E). As shown in FIG. 2G, a sheet forming step of forming the sealing sheet 19 so as to fill the second gap 16 and cover the peripheral side surface 13 of the optical semiconductor element 10 can also be performed.

That is, in this sheet forming process, the sheet placement process (see FIG. 2E) for covering the electrode surface 11 and the upper and side surfaces of the electrode 14 with the sealing sheet 19 is not performed, and FIG. 2G is referred to. The sealing sheet 19 is filled in the first gap 15 and the second gap 16 so that the electrode surface 11 and the upper and side surfaces of the electrode 14 are exposed and the peripheral side surface 13 and the side surface 22 are covered. For example, the varnish first gap 15 and the second gap 16 of the A stage are dropped.

Preferably, from the viewpoint of ensuring simple and reliable workability, a sheet placement step (see FIG. 2E) and a removal step (see FIG. 2G) are performed.

In the first embodiment described above, as shown in FIG. 1A, after the phosphor sheet 3 is formed on the surface of the first release sheet 6, the phosphor sheet 3 is changed from the first release sheet 6 to the temporarily fixed sheet 2. Transcription. However, the present invention is not limited to this, and the phosphor sheet 3 can be directly formed on the surface of the temporary fixing sheet 2 (specifically, the upper surface of the pressure-sensitive adhesive layer 5). In that case, the varnish of the fluorescent composition is applied to the surface of the temporary fixing sheet 2, and then this is B-staged. With this method, it is not necessary to use the first release sheet 6, so that the phosphor sheet 3 can be easily formed.

In the first embodiment described above, as shown in FIG. 1A, the phosphor sheet 3 is temporarily fixed to the temporary fixing sheet 2, and then, as shown in FIG. 3H, the optical semiconductor with the phosphor layer-sealing layer is provided. The element 1 is peeled from the temporary fixing sheet 2. However, the phosphor layer-sealing layer-attached optical semiconductor element 1 can be manufactured without using the temporary fixing sheet 2.

Preferably, the phosphor layer-sealing layer-attached optical semiconductor element 1 is manufactured using the temporary fixing sheet 2. According to this method, as described above, the respective cutting processes of the first cutting step and the second cutting step are performed on each of the phosphor sheet 3 and the sealing sheet 19 temporarily fixed to the temporary fixing sheet 2. It can be implemented reliably.

In the first embodiment described above, the B-stage phosphor sheet 3 is prepared as shown by the phantom lines in FIG. 1A. For example, the C-stage phosphor sheet 3 is prepared and temporarily prepared. It can also be temporarily fixed to the fixing sheet 2.

In this method, as shown in FIG. 1A, the C-stage phosphor sheet 3 is temporarily fixed on the temporary fixing sheet 2, and then, as shown in FIG. 1B, on the upper surface of the phosphor sheet 3, for example, An adhesive layer (not shown in FIG. 1B) made of a thermosetting resin or the like is provided. Thereafter, the optical semiconductor element 10 is temporarily fixed to the upper surface of the phosphor sheet 3 of the C stage. Thereafter, as shown in FIG. 1C, they are put into an oven 17, the adhesive layer is heated and cured, and the optical semiconductor element 10 is bonded to the upper surface of the phosphor sheet 3 by the adhesive layer. It is also possible to provide an adhesive layer on the upper surface of the phosphor sheet 3 in advance, and then temporarily fix the C-stage phosphor sheet 3 provided with the adhesive layer to the temporarily fixing sheet 2.

When the C-stage phosphor sheet 3 has tackiness (self-adhesiveness), the above-described adhesive layer is not provided, and the optical semiconductor element 10 is placed on the upper surface of the phosphor sheet 3 based on the tackiness described above. Then, as shown in FIG. 1C, the phosphor sheet 3 is further heated to bond the optical semiconductor element 10 to the upper surface of the phosphor sheet 3.

In the first embodiment described above, the phosphor sheet 3 is formed from a B-stage or C-stage phosphor composition containing a phosphor and a curable resin. For example, the phosphor sheet 3 is formed from phosphor ceramics. You can also.

Such a phosphor sheet 3 is a phosphor ceramic plate formed in a plate shape from the above-described phosphor ceramic (fired body).

In this method, the phosphor sheet 3 described above is temporarily fixed on the temporary fixing sheet 2, and then an adhesive layer made of, for example, a thermosetting resin is provided on the upper surface of the phosphor sheet 3. Thereafter, as shown in FIG. 1C, they are put into an oven 17, the adhesive layer is heated and cured, and the optical semiconductor element 10 is bonded to the upper surface of the phosphor sheet 3 by the adhesive layer.

Moreover, the above-described plural modifications can be combined as appropriate.

Second Embodiment
In the second embodiment, the same members and steps as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

In the second embodiment, the removal process and the C stage process are sequentially performed. Specifically, as shown in FIG. 4B, first, a removal process is performed, and then a C-staging process is performed as shown in FIG. 4C.

As shown in FIG. 4B, in the removing step, the upper end portion of the B-stage sealing sheet 19 is removed. In this removing step, a method using a pressure-sensitive adhesive sheet, a method using a solvent, and a method using an abrasive member are employed. These are used alone or in combination.

<Modification of Second Embodiment>
Although not shown, the removal process can be performed before and after the C-stage process. For example, first, the upper end of the B-stage sealing sheet 19 is wiped with a solvent, and then the sealing sheet 19 is made into a C-stage, and then the remaining portion at the upper end of the sealing sheet 19 is pressure-sensitive bonded. Remove by sheet.

<Third Embodiment>
In the third embodiment, the same members and steps as those in the first and second embodiments are denoted by the same reference numerals, and detailed description thereof is omitted.

In the first embodiment, as shown in FIG. 1D, a dicing saw 18 (an example of a cutting device) having the same blade thickness T1 from the radially inner side toward the outer side in “4. First cutting step”. Use to cut the phosphor layer 26. That is, the side surface 22 has a flat surface along the thickness direction.

1. First Cutting Step However, in the “first cutting step” of the third embodiment, as shown in FIG. 5A, the second dicing saw (dicing blade, cutting device of the cutting device) in which the blade thickness becomes narrower from the radially inner side toward the outer side. Example) Using 32, the phosphor sheet 3 is cut.

The second dicing saw 32 is narrower toward the outer side in the radial direction, and is connected to the two

tapered surfaces

33 and 34 facing in the left-right direction and the outer radial edges (circumferential edge) of the two tapered surfaces. It has the end surface 35 continuously.

The slopes of the two

tapered surfaces

33 and 34 are, for example, the same.

The angle α1 of each of the two

tapered surfaces

33 and 34 with respect to the virtual plane S2 along the radial direction is, for example, 10 degrees or more, preferably 30 degrees or more, and, for example, 60 degrees or less, preferably 80 Less than or equal to degrees.

The angle α1 is a value obtained by subtracting 90 degrees (right angle) from an angle β formed by either one of the two

tapered surfaces

33 and 34 and the peripheral end surface 35 of the second dicing saw 32 (β−90). ).

The length in the width direction (length in the left-right direction in FIG. 5A) T6 of the peripheral end surface 35 is smaller than the width T7 of the center of the second dicing saw 32. Further, the width direction length T6 of the peripheral end surface 35 of the second dicing saw 32 is adjusted to a length capable of forming a third gap 26 (see FIG. 7E), which will be described later, in the sealing layer 25. 3 It is smaller than the width W1 of the gap 26 (the blade thickness T2 of the dicing saw 27). Specifically, the width direction length T6 of the peripheral end surface 35 of the second dicing saw 32 is, for example, 10 μm or more, preferably 20 μm or more, and for example, 600 μm or less, preferably 400 μm or less. Further, the width direction length T6 of the peripheral end face 35 of the second dicing saw 32 is smaller than the interval L0 between the adjacent optical semiconductor elements 10, and specifically, for example, 90% or less, preferably about the interval L0. 80% or less, for example, 1% or more, specifically, for example, 600 μm or less, preferably 400 μm or less, for example, 10 μm or more.

In the first cutting step, the second gap 16 having a smaller opening cross-sectional area is formed toward the lower side. The second gap 16 has a shape corresponding to the two

tapered surfaces

33 and 34 of the second dicing saw 32.

The second gap 16 has a shape in which the opening cross-sectional area becomes smaller as it goes downward. Specifically, the second gap 16 has a shape in which the distance between the two side surfaces 22 extending along the thickness direction becomes narrower as viewed in a cross-sectional view.

An interval L4 between the lower end portions of the two side surfaces 22 facing one second gap 16 is substantially the same as the above-described width direction length T6 of the peripheral end surface 35 of the second dicing saw 32, specifically, For example, it is 10 μm or more, preferably 20 μm or more, and for example, 600 μm or less, preferably 400 μm or less.

2. Second Cutting Step As shown in FIG. 7E, the blade thickness T2 of the dicing saw 27 is smaller than the interval L4 (see FIG. 5A) described above, and is, for example, 95% or less, preferably 90% with respect to the interval L4. % Or less, for example, 5% or more. Specifically, the blade thickness T2 of the dicing saw 27 is, for example, 200 μm or less, preferably 100 μm or less, and, for example, 10 μm or more.

In the sealing layer 25 of the phosphor layer-sealing layer-attached optical semiconductor element 1 that is temporarily fixed to the temporarily fixing sheet 2, the width of the portion located outside the lower end edge of the side surface 22 of the phosphor layer 24 in plan view W3 is, for example, 10 μm or more, preferably 50 μm or more, and for example, 600 μm or less, preferably 400 μm or less. In the sealing layer 25 of the phosphor layer-sealing layer-attached optical semiconductor element 1, the interval W2 between the upper edge of the side surface 22 of the phosphor layer 24 and the peripheral side surface 13 of the optical semiconductor element 10 in plan view is, for example, It is 1 μm or more, preferably 10 μm or more, and for example, 500 μm or less, preferably 300 μm or less. In the sealing layer 25, when the width W4 of the portion located between the peripheral side surface 13 of the optical semiconductor element 10 and the side surface of the sealing layer 25 in plan view is the thickness T3 of the phosphor layer 24, It is expressed by a formula.

W4 = W2 + W3 + (T3 × tan α2)
α2 is an angle α2 (see an enlarged view of FIG. 7F) formed by the side surface 22 of the phosphor layer 24 and the virtual plane S1 along the thickness direction of the phosphor layer 24, and the second dicing saw 32 (FIG. 5A) described above. The angle α1 is the same as one of the two

tapered surfaces

33 and 34 with respect to the virtual plane along the radial direction.

Specifically, the width W4 of the upper end portion of the sealing layer 25 is, for example, 20 μm or more, preferably 50 μm or more, and for example, 1000 μm or less, preferably 600 μm or less.

3. Effects of Third Embodiment According to this method, as shown in FIG. 5A, the phosphor layer 24 is cut using the second dicing saw 32, and a substantially trapezoidal cross section having an upper base longer than the lower base The second gap 16 having the following is formed. As a result, the side surface 22 of the phosphor layer 24 can be easily tapered.

In the phosphor layer-sealing layer-attached optical semiconductor element 1 and the optical semiconductor device 30, the side surface 22 of the phosphor layer 24 is the above-described tapered surface. As compared with the first embodiment (see FIG. 3J) that is a flat surface along the surface, it can be increased.

Although the above invention has been provided as an exemplary embodiment of the present invention, this is merely an example and should not be construed as limiting. Variations of the present invention that are apparent to one of ordinary skill in the art are within the scope of the following claims.

The method for manufacturing an optical semiconductor element with a phosphor layer-sealing layer is used for manufacturing an optical semiconductor device.

DESCRIPTION OF SYMBOLS 1 Phosphor layer-sealing layer-attached optical semiconductor element 2 Temporary fixing sheet 3 Phosphor sheet 8 Optical semiconductor element 10 Optical semiconductor element 11 Electrode surface 12 Light emitting surface 13 Peripheral side surface 14 Electrode 15 First gap 16 Second gap 18 Dicing saw 19 sealing sheet 24 phosphor layer 25 sealing layer 27 dicing saw 28 substrate 30 optical semiconductor device 32 second dicing saw

Claims

An element disposing step of disposing a plurality of optical semiconductor elements on the one side in the thickness direction of the phosphor sheet at an interval;
The phosphor sheets between the plurality of optical semiconductor elements are cut so as to form a gap penetrating the phosphor sheet in the thickness direction, and a plurality of fluorescence corresponding to each of the plurality of optical semiconductor elements is formed. A first cutting step for forming each of the body layers;
A sheet forming step of forming a sealing sheet so as to fill the gap and cover the side surface of the optical semiconductor element;
A second cutting step of cutting the sealing sheet along the thickness direction to form each of the plurality of sealing layers corresponding to each of the plurality of optical semiconductor elements and each of the plurality of phosphor layers; A method for producing an optical semiconductor element with a phosphor layer-sealing layer, comprising:
Each of the plurality of optical semiconductor elements includes an electrode surface on which an electrode is provided, a light emitting surface that faces the electrode surface, a light emitting layer is provided, and a peripheral edge between the electrode surface and the light emitting surface. Have sides,
In the element arranging step, the light emitting surface is arranged on the phosphor sheet,
The sheet forming step
An electrode surface covering step for forming the sealing sheet so as to fill the gap and cover the side surface and the electrode surface;
2. The phosphor layer-optical semiconductor element with a sealing layer according to claim 1, further comprising a removing step of removing one end in the thickness direction of the sealing sheet to expose the electrode surface. Manufacturing method.
The method for producing an optical semiconductor element with a phosphor layer-sealing layer according to claim 2, wherein in the removing step, one surface in the thickness direction of the sealing sheet is wiped with a solvent.
The sheet forming step
A sheet arranging step of arranging the sealing sheet of the B stage so as to fill the gap and cover the side surface;
2. The phosphor according to claim 1, further comprising a C-stage forming step of converting the sealing sheet of the B stage into a C-stage after the sheet arranging step and before the second cutting step. For manufacturing an optical semiconductor element with a layer-sealing layer.
Both the first cutting step and the second cutting step are performed using a cutting blade,
In the first cutting step, the cutting blade is disposed on one side in the thickness direction of the phosphor sheet, and the cutting blade is brought into contact with the phosphor sheet from the one side in the thickness direction,
In the second cutting step, the cutting blade is disposed on one side in the thickness direction of the sealing sheet, and the cutting blade is brought into contact with the sealing sheet from the one side in the thickness direction. 2. The method for producing an optical semiconductor element with a phosphor layer-sealing layer according to 1.
Prior to the element placement step, the phosphor sheet is temporarily fixed to the temporary fixing sheet; and
After the second cutting step, the method further comprises: a phosphor layer comprising the optical semiconductor element, the phosphor layer and the sealing layer-a peeling step of peeling the optical semiconductor element with a sealing layer from the temporary fixing sheet. The method for producing an optical semiconductor element with a phosphor layer-sealing layer according to claim 1, wherein:
The method for producing an optical semiconductor element with a phosphor layer-sealing layer according to claim 1, wherein the sealing sheet contains a light reflecting component.