TW202027302A - Optical semiconductor element covered with phosphor layer and manufacturing method thereof - Google Patents

Abstract

The present invention discloses an optical semiconductor element covered with a covered layer, characterized by comprising: an optical semiconductor element, a covered layer covering the optical semiconductor element, and a transparent layer covering at least a portion of the covered layer.

Description

Optical semiconductor element covered with phosphor layer and manufacturing method thereof

The present invention relates to an optical semiconductor device coated with a phosphor layer and a manufacturing method thereof, and in detail, relates to an optical semiconductor device coated with a phosphor layer and a method for manufacturing the same.

Previously, the industry has proposed a phosphor layer-coated optical semiconductor device having an optical semiconductor device exposed on the lower surface, and a phosphor layer covering the upper and side surfaces of the optical semiconductor device (for example, refer to Japanese Patent Laid-Open No. 2012-39013 ).

However, the industry requires excellent luminous intensity for optical semiconductor devices coated with a phosphor layer. However, the optical semiconductor device covered with a phosphor layer described in Japanese Patent Laid-Open No. 2012-39013 has the disadvantage that the above-mentioned luminous intensity cannot be satisfied.

The object of the present invention is to provide an optical semiconductor device coated with a phosphor layer with excellent luminous intensity and a manufacturing method thereof.

The present invention [1] includes an optical semiconductor element coated with a phosphor layer, the optical semiconductor element coated with a phosphor layer comprising an optical semiconductor element, a phosphor layer covering the optical semiconductor element, and at least one of the phosphor layer covering the phosphor layer Part of the transparent layer.

Since the optical semiconductor device covered with the phosphor layer is provided with a transparent layer covering at least a part of the phosphor layer, the luminous intensity can be improved.

The present invention [2] includes the optical semiconductor device coated with a phosphor layer as described in [1], wherein the optical semiconductor device has: a device-side contact surface capable of contact with a substrate, and a contact surface opposite to the device-side contact surface The device-side facing surface is arranged opposite to each other by a distance x, and the device-side connecting surface connected to the device-side contactable surface and the device-side facing surface. The phosphor layer has: The first opposing surface on the phosphor side and the first opposing surface on the phosphor side, which is arranged opposite to the above-mentioned side at a distance y, and the element-side connecting surface is spaced apart by a distance α in an orthogonal direction orthogonal to the above-mentioned one direction. The second facing surface on the phosphor side is arranged, and the transparent layer has: a transparent side facing surface arranged opposite to the first facing surface on the phosphor side at a distance z on the one side, and The transparent side connecting surface connected to the transparent side facing surface and arranged at intervals in the orthogonal direction with respect to the element side connecting surface when projected in the one direction, and the phosphor layer-coated optical semiconductor element is full All of the following (1) ~ (4). (1) The value (y/x) obtained by dividing the distance y by the distance x is 1 or more and 5 or less. (2) The sum (y+z) of the distance y and the distance z is 0.25 mm or more and 2 mm or less. (3) The sum (α+β) of the distance α and the distance β between the second facing surface on the phosphor side and the connecting surface on the transparent side is 50 μm or more and 2000 μm or less. However, the aforementioned distance β is 0 or more. (4) The value (y/α) obtained by dividing the above distance y by the above distance α is 1 or more and 2.5 or less.

Since the phosphor layer-coated optical semiconductor device satisfies all of the above (1) to (4), it can further improve the luminous intensity, has excellent color uniformity, and suppresses color unevenness.

The present invention [3] includes the optical semiconductor device coated with a phosphor layer as described in [1] or [2], wherein the phosphor layer contains a phosphor and a first transparent composition, and the first transparent composition is The refractive index RIp is 1.45 or more and 1.60 or less.

Since the optical semiconductor element covered with the phosphor layer has a refractive index RIp of 1.45 or more and 1.60 or less, the luminous intensity can be improved.

The present invention [4] includes the optical semiconductor device coated with a phosphor layer as described in any one of [1] to [3], wherein the phosphor layer contains a phosphor and a first transparent composition, and the transparent layer contains For the second transparent composition, the value (RIp-RIt) obtained by subtracting the refractive index RIt of the second transparent composition from the refractive index RIp of the first transparent composition is -0.70 or more and 0.20 or less.

The photo-semiconductor element covered with a phosphor layer can be used because the value (RIp-RIt) obtained by subtracting the refractive index RIt of the second transparent composition from the refractive index RIp of the first transparent composition is -0.70 or more and 0.20 or less Increase the luminous intensity.

The present invention [5] includes the optical semiconductor device coated with a phosphor layer as described in [4], wherein the above-mentioned RIp-the above-mentioned RIt is 0.05 or more.

Since the RIp-RIt of the optical semiconductor device covered with the phosphor layer is 0.05 or more, the luminous intensity can be further improved.

The present invention [6] includes the optical semiconductor device covered with a phosphor layer as described in [2], wherein the second opposing surface on the phosphor side and the connecting surface on the transparent side are formed on the same surface in the one direction.

The phosphor layer and the transparent layer in the optical semiconductor device covered with the phosphor layer can form the second opposing surface on the phosphor side and the connecting surface on the transparent side respectively by a simple method.

The present invention [7] includes the optical semiconductor device covered with a phosphor layer as described in [2] or [6], wherein the distance α exceeds 50 μm.

Since the optical semiconductor element covered with the phosphor layer has a distance α exceeding 50 μm, the color uniformity can be improved.

The present invention [8] includes a method for manufacturing an optical semiconductor device coated with a phosphor layer, which is a method for manufacturing the optical semiconductor device coated with a phosphor layer, and includes: forming the phosphor layer on the transparent A step of manufacturing a coating sheet on the surface of the layer, and a step of arranging the coating sheet so that the phosphor layer covers a plurality of optical semiconductor elements.

According to the method for manufacturing the phosphor layer-coated optical semiconductor device, the coating sheet can be used to easily manufacture the phosphor layer-coated optical semiconductor device with excellent luminous intensity.

The present invention [9] includes the method of manufacturing an optical semiconductor device coated with a phosphor layer as described in [8], which further includes: cutting the coating by singulating the optical semiconductor device coated with the phosphor layer Steps of sheeting.

According to the method for manufacturing the phosphor layer-coated optical semiconductor device, the phosphor layer-coated optical semiconductor device having a desired size can be easily manufactured.

The present invention [10] includes a method for manufacturing an optical semiconductor device coated with a phosphor layer, which is used for manufacturing the optical semiconductor device coated with a phosphor layer as described in any one of [1] to [7] And includes: a phosphor layer preparation step, which prepares a sheet-shaped phosphor layer; a phosphor layer disposition step, which is a step of disposing the sheet-shaped phosphor layer so as to cover the optical semiconductor element; and a transparent layer disposition step, After the phosphor layer disposing step, the transparent layer is disposed so as to cover at least a part of the phosphor layer.

The method for manufacturing the optical semiconductor device covered with a phosphor layer includes a phosphor layer preparation step of preparing a sheet-shaped phosphor layer and a phosphor layer arrangement step of disposing the sheet-shaped phosphor layer in a manner of covering the optical semiconductor element. Therefore, by using a sheet-shaped phosphor layer, an optical semiconductor device covered with a phosphor layer with excellent luminous intensity can be easily manufactured.

The present invention [11] includes the method for manufacturing an optical semiconductor device coated with a phosphor layer as described in [10], wherein in the phosphor layer arranging step, the above-mentioned sheet-like semiconductor device is arranged in such a way that a plurality of the optical semiconductor devices are buried A phosphor layer; and the method further includes: a singulation/removal step, which is after the phosphor layer arranging step and before the transparent layer arranging step, corresponding to a plurality of the optical semiconductor elements to separate the phosphor layer It is sliced, and the phosphor layer located far away from the optical semiconductor element is removed.

According to the method for manufacturing an optical semiconductor device covered with a phosphor layer, in the singulation/removal step, after the phosphor layer placement step and before the transparent layer placement step, the phosphor layers are formed corresponding to the plurality of optical semiconductor devices. At the same time as the singulation, the phosphor layer located far away from the optical semiconductor element is removed, so the optical semiconductor element covered with the phosphor layer with the required size can be manufactured in a small number of steps.

The present invention [12] includes the method for manufacturing an optical semiconductor device coated with a phosphor layer as described in [11], wherein the optical semiconductor device has: a device side contact surface capable of contacting a substrate, and a contact surface with respect to the device side The device-side facing surface that faces the device-side facing surface and the device-side facing surface connected to the above-mentioned device-side contact-possible surface and the above-mentioned device-side facing surface is connected to each other with a distance x on one side, in the above-mentioned phosphor layer arrangement step, The sheet-shaped phosphor layer is arranged so as to cover the element-side connecting surface of a plurality of the optical semiconductor elements, and in the singulation/removal step, the phosphor layer covering the element-side connecting surface is left.

According to the manufacturing method of the optical semiconductor device covered with a phosphor layer, the phosphor layer on the connecting surface of the covered device is left in the singulation/removal step, so that the phosphor layer with the required size can be easily manufactured. Optical semiconductor device with phosphor layer.

The present invention [13] includes a method for manufacturing an optical semiconductor device coated with a phosphor layer as described in any one of [10] to [12], which further includes a transparent layer preparation step of preparing a sheet-shaped transparent layer, as described above In the transparent layer preparation step, the sheet-shaped transparent layer is arranged to cover at least a part of the phosphor layer.

The optical semiconductor element coated with a phosphor layer of the present invention includes an optical semiconductor element, a phosphor layer covering the optical semiconductor element, and a transparent layer covering at least a part of the phosphor layer.

Hereinafter, an example of the optical semiconductor device coated with a phosphor layer of the present invention and its manufacturing method will be described with reference to FIGS. 1 to 15H with reference to the first embodiment to the third embodiment.

>First Embodiment> In Figure 1, the up and down direction on the paper is the up and down direction (first direction, thickness direction), the upper side of the paper is the upper side (the first direction side, the thickness direction side), and the lower side of the paper is the lower side (first direction, thickness direction). 1 direction on the other side, thickness direction on the other side). The left-right direction of the paper is the left-right direction (the second direction orthogonal to the first direction), the left side of the paper is the left side (one side in the second direction), and the right side of the paper is the right side (the other side in the second direction). The paper thickness direction is the front-rear direction (the third direction orthogonal to the first direction and the second direction), the near side of the paper is the front side (one side in the third direction), and the back side of the paper is the back side (the other side in the third direction).

[Fluorescent layer-sealed LED] As shown in Figure 1, as an example of a phosphor layer-coated optical semiconductor element, a phosphor-layer-sealed LED1 includes an example of an optical semiconductor element, LED2, and an upper surface and side surface of the coated LED2 The phosphor layer 3 and the transparent layer 4 covering the upper surface of the phosphor layer 3.

[Description of each component] LED2 is an optical semiconductor element that converts electrical energy into light energy. Optical semiconductor devices do not include rectifiers such as transistors in a different technical field from optical semiconductor devices. The LED2 is formed, for example, in a substantially rectangular cross-sectional view and a substantially rectangular plan view having a thickness (maximum length in the vertical direction) shorter than the length in the surface direction (specifically, the length in the left-right direction and the length in the front-rear direction). The LED 2 has a lower surface 21, an upper surface 22 and a side surface 23.

The lower surface 21 of the LED 2 is an example of a possible contact surface on the device side that can contact the substrate 50. A part of the lower surface 21 of the LED 2 is formed by bumps (not shown), and is electrically connected to a terminal (not shown in FIG. 2) provided on the upper surface of the substrate 50. The lower surface 21 of the LED2 is the bottom of the LED1 sealed by the phosphor layer.

The upper surface 22 of the LED2 is an example of an element side facing surface which is arranged opposite to the lower surface 21 of the LED2 at a distance x on the upper side (an example of one side). Furthermore, the distance x between the upper surface 22 of the LED 2 and the lower surface 21 on the upper side is the same as the thickness x of the LED 2.

The side surface 23 of the LED2, that is, the front surface, the rear surface, the left surface, and the right surface, are an example of the device-side connecting surface connected to the lower surface 21 and the upper surface 22.

The upper surface 22 and the side surface 23 of the LED 2 are formed by a light-emitting layer (not shown).

As the LED2, for example, a blue LED (light emitting diode element) emitting blue light can be cited.

The phosphor layer 3 is a wavelength conversion layer that converts part of the blue light emitted from the LED 2 into yellow light. The phosphor layer 3 is formed into a shape including the LED 2 when viewed from above. The phosphor layer 3 is arranged to cover the upper surface 22 and the side surface 23 of the LED 2 while exposing the lower surface 21 of the LED 2 on the other hand. That is, in the center of the lower portion of the phosphor layer 3, a receiving portion 30 for accommodating the LED 2 is formed. The receiving portion 30 is a concave portion recessed from the lower surface 32 of the phosphor layer 3 toward the upper side, and is formed in a manner corresponding to the outer shape of the LED 2. That is, the phosphor layer 3 is formed in a substantially rectangular cross-sectional view and a substantially rectangular planar view including the receiving portion 30. The phosphor layer 3 has a lower surface 32, an upper surface 31, a side surface 33, and an inner surface 34 formed in the receiving portion 30.

The lower surface 32 of the phosphor layer 3 is the lowest surface of the phosphor layer 3 and is a possible contact surface of the phosphor side that can contact the substrate 50.

The upper surface 31 of the phosphor layer 3 is an example of the first opposing surface on the phosphor side that is arranged opposite to the upper surface 22 of the LED 2 on the upper side (an example of one side) at a distance y. In addition, the upper surface 31 of the phosphor layer 3 is also a surface that is arranged opposite to the upper surface 22 of the LED 2 at a distance y on the upper side. Furthermore, in the phosphor layer 3, the upper surface 31 is separated from the lower surface 32 of the phosphor layer 3 (ie, the upper surface 22 of the LED2) on the upper side by a distance y that is oppositely arranged on the upper side of the LED2 in the phosphor layer 3 The thickness of the part y.

The side surface 33 of the phosphor layer 3, that is, the front, rear, left, and right sides are the second pair of the phosphor side that is arranged opposite to the side surface 23 of the LED 2 in the plane direction (an example of the orthogonal direction) by a distance α. An example of facing. In addition, the side surface 33 of the phosphor layer 3 is formed as an exposed surface exposed to the outside. Furthermore, the distance α between the side surface 33 of the phosphor layer 3 and the side surface 23 of the LED2 outside the LED2 is the length of the left-right direction and the front-rear direction of the part (side portion 35) of the phosphor layer 3 disposed on the outer side of the LED2. Length (minimum length) α.

The inner surface 34 of the receiving portion 30 of the phosphor layer 3 is in contact with the upper surface 22 and the side surface 23 of the LED 2.

The phosphor layer 3 is formed of, for example, a phosphor resin composition.

The phosphor resin composition contains a phosphor and a transparent resin composition (the first transparent resin composition as an example of the first transparent composition).

As the phosphor, for example, a yellow phosphor that can convert blue light into yellow light, a red phosphor that can convert blue light into red light, and the like can be cited.

Examples of yellow phosphors include silicate phosphors such as (Ba, Sr, Ca) ₂ SiO ₄ : Eu, (Sr, Ba) ₂ SiO ₄ : Eu (barium orthosilicate (BOS)), etc. For example, Y ₃ Al ₅ O ₁₂ : Ce (YAG (yttrium aluminum garnet): Ce), Tb ₃ Al ₃ O ₁₂ : Ce (TAG (aluminum aluminum garnet): Ce), etc. have garnet-type crystals Structured garnet-type phosphors, such as oxynitride phosphors such as Ca-α-SiAlON.

Examples of the red phosphor include nitride phosphors such as CaAlSiN ₃ : Eu and CaSiN ₂ : Eu.

Examples of the shape of the phosphor include a spherical shape, a plate shape, and a needle shape. From the viewpoint of fluidity, a spherical shape is preferred.

The average value of the maximum length of the phosphor (in the case of a spherical shape, the average particle diameter) is, for example, 0.1 μm or more, preferably 1 μm or more, and, for example, 200 μm or less, preferably 100 μm or less.

The specific gravity of the phosphor exceeds 2.0, for example, or is 9.0 or less, for example. The phosphor can be used alone or in combination.

The blending ratio of the phosphor relative to 100 parts by mass of the transparent resin composition is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, for example, 80 parts by mass or less, and preferably 50 parts by mass or less. In addition, the blending ratio of the phosphor relative to the phosphor resin composition is, for example, 0.1% by mass or more, preferably 0.5% by mass or more, for example, 90% by mass or less, and preferably 80% by mass or less.

Examples of the transparent resin composition include a transparent resin composition used as a sealing material for sealing LED2. Specifically, as a transparent resin composition, a thermosetting resin composition and a thermoplastic resin composition are mentioned, for example, Preferably, a thermosetting resin composition is mentioned. As a thermosetting resin composition, a two-stage reaction-curable resin composition and a single-stage reaction-curable resin composition are mentioned, for example.

The two-stage reaction curable resin composition has two reaction mechanisms. In the first stage reaction, it can proceed from the A stage state to B stage (semi-curing), and then in the second stage reaction, it can proceed from the B stage state to C Staged (completely hardened). That is, the two-stage reaction curable resin composition is a thermosetting resin composition that can be in a B-stage state under appropriate heating conditions. However, the two-stage reaction curable resin composition may be heated from the A-stage state to the C-stage state at one time without maintaining the B-stage state. Furthermore, the B-stage state is a state in which the thermosetting resin composition is in a liquid state between the A-stage state and the fully-hardened C-stage state, and the hardening and gelation progress slightly, and the compression elastic modulus is smaller than the C-stage state. Semi-solid or solid state of elastic modulus of state.

The one-stage reaction curable resin composition has one reaction mechanism. In the first stage reaction, it can be C-staged (completely cured) from the A-stage state. Furthermore, the one-stage reaction curable resin composition includes the following thermosetting resin composition, which can stop the reaction in the middle of the reaction in the first stage and change from the A-stage state to the B-stage state. Further heating can restart the first-stage reaction and proceed to C-stage (complete curing) from the B-stage state. That is, this thermosetting resin composition is a thermosetting resin composition which can be in a B-stage state. On the other hand, the one-stage reaction curable resin composition includes a thermosetting resin composition that cannot be controlled so that it stops in the middle of the one-stage reaction, that is, cannot be in the B-stage state, but from the A-stage state C-stage (complete curing) is performed at once.

Examples of the transparent resin composition include silicone resins, epoxy resins, urethane resins, polyimide resins, phenol resins, urea resins, melamine resins, unsaturated polyester resins, and the like. As the transparent resin composition, a silicone resin and an epoxy resin are preferably cited. The above-mentioned transparent resin composition may be the same kind or plural kinds.

As the silicone resin, from the viewpoints of transparency, durability, heat resistance, and light resistance, for example, an addition reaction curing type polysilicon resin composition, a condensation-addition reaction curing type polysilicon resin composition can be cited Silicone resin compositions such as materials. Silicone resin can be used alone or in combination.

The addition reaction curable polysiloxane resin composition is a one-stage reaction curable resin composition, such as polysiloxane containing alkenyl groups, polysiloxane containing hydrogen silyl groups, and hydrosilation catalysts.

The alkenyl-containing polysiloxane contains two or more alkenyl and/or cycloalkenyl groups in the molecule. The alkenyl group-containing polysiloxane is specifically represented by the following average composition formula (1). Average composition formula (1): R ¹ _a R ² _b SiO _(4-ab)/2 (In the formula, R ¹ represents an alkenyl group with 2 to 10 carbons and/or a cycloalkenyl group with 3 to 10 carbons. R ² represents an unsubstituted or substituted monovalent hydrocarbon group with 1 to 10 carbon atoms (except for alkenyl and cycloalkenyl). a is 0.05 or more and 0.50 or less, b is 0.80 or more and 1.80 or less)

In formula (1), the alkenyl represented by R ¹ includes, for example, vinyl, allyl, propenyl, butenyl, pentenyl, hexenyl, heptenyl, octenyl, etc. Number of alkenyl groups from 2 to 10. Examples of the cycloalkenyl group represented by R ¹ include cycloalkenyl groups having 3 to 10 carbon atoms such as cyclohexenyl and norfolkene. As R ¹ , an alkenyl group is preferred, an alkenyl group having 2 to 4 carbon atoms is more preferred, and a vinyl group is more preferred.

The alkenyl groups represented by R ¹ may be the same kind or plural kinds.

The monovalent hydrocarbon group represented by R ² is an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms other than an alkenyl group and a cycloalkenyl group.

Examples of unsubstituted monovalent hydrocarbon groups include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, second butyl, tertiary butyl, pentyl, hexyl, and pentyl. Alkyl, heptyl, octyl, 2-ethylhexyl, nonyl, decyl and other C1-C10 alkyl groups, such as cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, etc. C3-6 Cycloalkyl groups include aryl groups with 6 to 10 carbon atoms such as phenyl, tolyl, naphthyl, and aralkyl groups with 7 to 8 carbon atoms such as benzyl and benzylethyl. Preferably, an alkyl group having 1 to 3 carbon atoms and an aryl group having 6 to 10 carbon atoms are used, and a methyl group and/or a phenyl group are more preferably used.

On the other hand, as the substituted monovalent hydrocarbon group, the hydrogen atom in the above-mentioned unsubstituted monovalent hydrocarbon group is substituted with a substituent.

Examples of the substituent include halogen atoms such as chlorine atoms, and glycidyl ether groups.

Specific examples of the substituted monovalent hydrocarbon group include 3-chloropropyl and glycidoxypropyl.

The monovalent hydrocarbon group may be unsubstituted or substituted, and is preferably unsubstituted.

The monovalent hydrocarbon groups represented by R ² are the same kind or plural kinds. Preferably, a methyl group and/or a phenyl group are used, and more preferably, a combination of a methyl group and a phenyl group is used.

a is preferably 0.10 or more and 0.40 or less.

b is preferably 1.5 or more and 1.75 or less.

The weight average molecular weight of the alkenyl group-containing polysiloxane is, for example, 100 or more, preferably 500 or more, and, for example, 10,000 or less, preferably 5,000 or less. The weight average molecular weight of alkenyl-containing polysiloxane is a conversion value based on standard polystyrene measured by gel permeation chromatography.

The alkenyl group-containing polysiloxane is prepared by a suitable method, and commercially available products can also be used.

In addition, the alkenyl group-containing polysiloxanes are the same kind or plural kinds.

The polysiloxane containing hydrosilyl groups, for example, contains two or more hydrosilyl groups (SiH groups) in the molecule. The polysiloxane containing a hydrogen silyl group is specifically represented by the following average composition formula (2). Average composition formula (2): H _c R ³ _d SiO _(4-cd)/2 (In the formula, R ³ represents an unsubstituted or substituted monovalent hydrocarbon group with 1 to 10 carbon atoms (wherein, alkenyl and / Or except for cycloalkenyl). c is 0.30 or more and 1.0 or less, d is 0.90 or more and 2.0 or less)

In formula (2), the unsubstituted or substituted monovalent hydrocarbon group with 1 to 10 carbons represented by R ³ can be exemplified by the unsubstituted or substituted carbon number represented by R ² of formula (1) Those with the same monovalent hydrocarbon group from 1 to 10. Preferably, an unsubstituted monovalent hydrocarbon group having 1 to 10 carbons is cited, more preferably an alkyl group having 1 to 10 carbons, an aryl group having 6 to 10 carbons, and more preferably methyl and/ Or phenyl.

c is preferably 0.5 or less.

d is preferably 1.3 or more and 1.7 or less.

The weight average molecular weight of the polysiloxane containing hydrogen silyl groups is, for example, 100 or more, preferably 500 or more, and, for example, 10,000 or less, preferably 5,000 or less. The weight average molecular weight of the polysiloxane containing hydrogen silyl groups is a conversion value based on standard polystyrene measured by gel permeation chromatography.

The polysiloxane containing hydrosilyl groups can be prepared by a suitable method, and commercially available products can also be used. In addition, polysiloxanes containing hydrogen silyl groups are the same kind or plural kinds.

Wherein R2 and R3 is a hydrocarbon group of at least any of the above average composition formula (1) and the average composition formula (2) preferably comprises a phenyl group, more preferably both of R ³ and R ² are hydrocarbon groups comprising a phenyl group. In addition, when at least one of the hydrocarbon groups of R ² and R ³ contains a phenyl group, the addition reaction curable silicone resin composition is a phenyl silicone resin composition. The phenyl-based silicone resin composition is a single-stage reaction curable resin composition that can be in a B-stage state. The refractive index of the phenyl-based silicone resin composition is, for example, 1.45 or more, and furthermore, 1.50 or more.

On the other hand, when the hydrocarbons of both R ² and R ³ are methyl groups, the addition reaction curable silicone resin composition is a methyl silicone resin composition. The methyl silicone resin composition is a single-stage reaction curable resin composition that cannot be in a B-stage state. The refractive index of the methyl silicone resin composition is, for example, 1.50 or less, and further 1.45 or less.

Among the addition reaction-curable silicone resin compositions, from the viewpoint of obtaining excellent gas permeability, a methyl-based silicone resin composition is preferably cited.

Regarding the mixing ratio of the polysiloxane containing hydrogen silyl group, so that the number of moles of alkenyl and cycloalkenyl of polysiloxane containing alkenyl group is relative to the number of moles of polysiloxane containing hydrogen silyl group The ratio of the number of moles (the number of moles of the alkenyl group and cycloalkenyl group/the number of moles of the hydrosilyl group) is, for example, 1/30 or more, preferably 1/3 or more, and, for example, 30/1 or less , It is better to adjust so that it becomes 3/1 or less.

As long as the hydrosilation catalyst is a reaction (hydrosilation addition) of the alkenyl and/or cycloalkenyl of the alkenyl-containing polysiloxane and the hydrosilyl group of the hydrosilyl-containing polysiloxane The speed-increasing substance (addition catalyst) is not particularly limited. For example, a metal catalyst can be mentioned. Examples of metal catalysts include platinum catalysts such as platinum black, platinum chloride, chloroplatinic acid, platinum-olefin complexes, platinum-carbonyl complexes, and platinum-acetyl acetate, such as palladium catalysts. , Such as rhodium catalyst and so on.

The mixing ratio of the hydrosilation catalyst is based on the amount of metal in the metal catalyst (specifically, metal atoms), relative to the polysiloxane containing alkenyl groups and polysiloxane containing hydrogen silyl groups, based on mass , For example, 1.0 ppm or more, and, for example, 10000 ppm or less, preferably 1000 ppm or less, and more preferably 500 ppm or less.

The addition reaction curing type polysiloxane resin composition is prepared by blending polysiloxane containing alkenyl groups, polysiloxane containing hydrogen silyl groups, and hydrosilation catalyst in the above-mentioned ratio.

The above-mentioned addition reaction hardening type polysiloxane resin composition is prepared in an A-stage (liquid) state and used by blending polysiloxane containing alkenyl groups, polysiloxane containing hydrogen silyl groups, and hydrosilation catalysts. .

As mentioned above, the phenyl-based polysiloxane resin composition is heated under the required conditions to produce the alkenyl group of the alkenyl group-containing polysiloxane and/or the cycloalkenyl group and the hydrogen-containing silyl group polysiloxane. The hydrosilylation addition reaction of the hydrosilyl group is then temporarily stopped. Thereby, it is possible to change from the A-stage state to the B-stage (semi-hardened) state. Thereafter, by further heating under the required conditions, the above-mentioned hydrosilation addition reaction is restarted, thereby ending the reaction. Thereby, it is possible to change from the B-stage state to the C-stage (completely hardened) state.

In addition, the phenyl-based silicone resin composition is solid when it is in the B-stage (semi-cured) state. In addition, the phenyl-based silicone resin composition in the B-stage state can have both thermoplasticity and thermosetting properties. That is, the B-stage phenyl-based silicone resin composition is temporarily plasticized by heating, and then completely cured.

On the other hand, in the above-mentioned methyl-based silicone resin composition, the hydrosilylation reaction of the alkenyl group and/or the cycloalkenyl group and the hydrosilyl group occurs, and the reaction is promoted without stopping the reaction, thereby completing the reaction. Thereby, it is possible to change from the A-stage state to the C-stage (completely hardened) state. A commercially available product can be used for the methyl-based silicone resin composition. As a commercially available product, for example, ELASTOSIL series (manufactured by Wacker Asahikasei Silicone, specifically, methyl-based silicone resin compositions such as ELASTOSIL LR7665), KER series (manufactured by Shin-Etsu Silicones), and the like can be cited.

The condensation-addition reaction curable silicone resin composition is a two-stage reaction curable resin. Specifically, examples thereof include, for example, Japanese Patent Laid-Open No. 2010-265436, Japanese Patent Laid-Open No. 2013-187227, etc. The first to eighth condensation-addition reaction curable silicone resin compositions described, for example, Japanese Patent Laid-Open No. 2013-091705, Japanese Patent Laid-Open No. 2013-001815, and Japanese Patent Laid-Open No. 2013-001814 The polysiloxane resin composition containing cage octasesquioxane described in the gazette, Japanese Patent Laid-open No. 2013-001813, Japanese Patent Laid-Open No. 2012-102167, etc. Furthermore, the condensation-addition reaction curable silicone resin composition is solid and has both thermoplasticity and thermosetting properties.

As the epoxy resin, for example, bisphenol type epoxy resin (for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, hydrogenated bisphenol A type epoxy resin, Dimer acid-modified bisphenol type epoxy resin, etc.), novolak type epoxy resin (e.g. phenol novolak type epoxy resin, cresol novolak type epoxy resin, biphenyl type epoxy resin, etc.), naphthalene Aromatic epoxy resins such as type epoxy resins, pyrene type epoxy resins (such as bisaryl pyrene type epoxy resins, etc.), triphenylmethane type epoxy resins (such as trihydroxyphenylmethane type epoxy resins, etc.) Resins, such as triglycidyl isocyanurate (triglycidyl isocyanurate), hydantoin epoxy resin and other nitrogen-containing cyclic epoxy resins, such as aliphatic epoxy resins, such as alicyclic Epoxy resins (for example, bicyclic cyclic epoxy resins such as dicyclopentadiene epoxy resins, etc.), for example, glycidyl ether epoxy resins, such as glycidylamine epoxy resins, and the like. In addition, as epoxy resins, for example, dicarboxylic acids such as phthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid, methyltetrahydrophthalic acid, acid-resistant, and methyl-resistant acid can be cited. Diglycidyl esters of acids, etc. Furthermore, as an epoxy resin, glycidyl esters, such as nuclear hydrogenated trimellitic acid, nuclear hydrogenated pyromellitic acid, etc. which have an alicyclic structure in which an aromatic ring is hydrogenated can also be mentioned. The epoxy resin can be used alone or in combination.

The epoxy resin may be in any form of liquid, semi-solid, and solid. The average epoxy equivalent of epoxy resin is 90-1000, for example. When the epoxy resin is in a solid state, from the viewpoint of ease of operation, for example, the softening point is 50 to 160°C.

Epoxy resin is usually used in combination with a hardener. Examples of the curing agent include acid anhydride-based curing agents, isocyanuric acid derivative-based curing agents, and the like.

Examples of acid anhydride-based hardeners include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methane Based on ground acid anhydride, ground acid anhydride, glutaric anhydride, methylhexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, etc. The acid anhydride hardener can be used alone or in combination of two or more kinds.

Examples of the isocyanuric acid derivative-based curing agent include: 1,3,5-tris(1-carboxymethyl)isocyanurate, 1,3,5-tris(2-carboxyethyl)isocyanurate Yl)ester, 1,3,5-tris(3-carboxypropyl)isocyanurate, 1,3-bis(2-carboxyethyl)isocyanurate, etc. The isocyanuric acid derivative hardener can be used alone or in combination of two or more kinds. The hardener can be used alone or in combination of two or more kinds.

The blending ratio of epoxy resin and hardener is, for example, to 0.5~1.5 equivalent of the active group (anhydride group or carboxyl group) in the hardener that can react with epoxy group relative to 1 equivalent of epoxy group in epoxy resin. The setting is preferably set so that it becomes 0.7 to 1.2 equivalents.

In addition, the transparent resin composition may further contain a filler.

Examples of fillers include particles such as inorganic particles and organic particles.

As the inorganic particles, for example, silicon dioxide (SiO ₂ ), talc (Mg ₃ (Si ₄ O ₁₀ )(HO) ₂ ), alumina (Al ₂ O ₃ ), boron oxide (B ₂ O ₃ ), Calcium oxide (CaO), zinc oxide (ZnO), total oxide (SrO), magnesium oxide (MgO), zirconium oxide (ZrO2), barium oxide (BaO), antimony oxide (Sb ₂ O ₃ ) and other oxides, such as nitrogen Inorganic particles (inorganic matter) such as nitrides such as aluminum (AlN) and silicon nitride (Si ₃ N ₄ ). In addition, as the inorganic particles, for example, composite inorganic particles prepared from the inorganic materials exemplified above are cited, and composite inorganic oxide particles prepared from oxides (specifically, glass particles, etc.) are preferred.

As composite inorganic oxide particles, for example, it contains silicon dioxide, or silicon dioxide and boron oxide as main components, and also contains aluminum oxide, calcium oxide, zinc oxide, strontium oxide, magnesium oxide, zirconium oxide, barium oxide, and antimony oxide. Etc. as a subsidiary component. The content ratio of the main component in the composite inorganic oxide particles relative to the composite inorganic oxide particles is, for example, more than 40% by mass, preferably 50% by mass or more, and, for example, 90% by mass or less, preferably 80% by mass or less . The content ratio of the subsidiary components is the remainder of the content ratio of the above-mentioned main components.

The composite oxide particles can be mixed with the above-mentioned main components and sub-components and heated to melt them, and the molten material is rapidly cooled, and then pulverized by, for example, a ball mill, and then subjected to appropriate surface processing as necessary ( Specifically, it is obtained by spheroidization, etc.). The inorganic particles can be used alone or in combination.

Examples of organic materials for organic particles include acrylic resins, styrene resins, acrylic-styrene resins, silicone resins, polycarbonate resins, benzoguanamine resins, polyolefin resins, and polyolefin resins. Ester resins, polyamide resins, polyimide resins, etc. These can be used alone or in combination.

Among such organic materials, from the viewpoint of light diffusibility and acquisition properties, a polysiloxane-based resin is preferable. The organic particles can be used alone or in combination.

The filler can be used alone or in combination.

The refractive index of the filler is, for example, 1.40 or more, and for example, is 1.600 or less.

The shape of the filler is not particularly limited, and examples thereof include a spherical shape, a plate shape, and a needle shape. From the viewpoint of fluidity, a spherical shape is preferred.

The average particle diameter of the filler is, for example, 3 μm or more, preferably 5 μm or more, and, for example, 70 μm or less, preferably 50 μm or less.

The content ratio of the filler relative to the transparent resin composition is, for example, 1% by mass or more, preferably 3% by mass or more, and for example, 80% by mass or less, preferably 75% by mass or less.

The refractive index RIp of the transparent resin composition (an example of the first transparent composition) is, for example, 1.40 or more, preferably 1.45 or more, preferably 1.50 or more, and, for example, 1.63 or less, preferably 1.60 or less, more preferably Below 1.57. If the refractive index RIp of the transparent resin composition is more than the above lower limit, the luminous intensity of LED1 sealed in the phosphor layer can be improved.

The refractive index RIp of the transparent resin composition is calculated by an Abbe refractometer. In addition, when the transparent resin composition contains a thermosetting resin, it is calculated as the refractive index in the cured state (fully cured state). Furthermore, the refractive index of the transparent resin composition before curing is substantially the same as the refractive index of the transparent resin composition after curing.

Furthermore, silane coupling agents, anti-aging agents, modifiers, surfactants, dyes, pigments (except the above-mentioned fillers), discoloration inhibitors, and ultraviolet absorbers can be added to the phosphor resin composition at an appropriate ratio if necessary. And other well-known additives.

As shown in Fig. 1, the transparent layer 4 is the uppermost layer of the LED1 sealed by the phosphor layer. Specifically, the transparent layer 4 is arranged to cover the entire surface of the first facing surface 31 on the phosphor side of the phosphor layer 3. The shape of the transparent layer 4 in plan view is formed to be the same as the shape of the first facing surface 31 of the phosphor layer 3 on the phosphor side. That is, the transparent layer 4 is formed in a substantially rectangular cross-sectional view and a substantially rectangular planar view. The transparent layer 4 has a lower surface 41, an upper surface 42 and a side surface 43.

The lower surface 41 of the transparent layer 4 is a transparent side contact surface which is in contact with the first facing surface 31 on the phosphor side.

The upper surface 42 of the transparent layer 4 is an example of a transparent side facing surface disposed opposite to the upper surface 31 of the phosphor layer 3 at a distance z on the upper side (an example of one side). The upper surface 42 of the transparent layer 4 is the uppermost surface of the LED 1 sealed by the phosphor layer. The distance z between the upper surface 42 of the transparent layer 4 and the upper surface 31 of the phosphor layer 3 is the same as the thickness z of the transparent layer 4.

The side surface 43 of the transparent layer 4 is connected to the lower surface 41 and the upper surface 42 of the transparent layer 4. The side surface 43 of the transparent layer 4 is an example of a transparent side connecting surface arranged at an interval α outside the side surface 23 of the LED 2 in the plane direction (an example of an orthogonal direction) when projecting in the vertical direction (an example of one direction). The side surface 43 of the transparent layer 4 is formed on the same surface as the side surface 33 of the phosphor layer 3 in the vertical direction.

The transparent layer 4 is formed of, for example, a second transparent composition such as a transparent resin composition and an inorganic substance.

As a transparent resin composition, the said transparent resin composition (transparent resin composition contained in a phosphor resin composition), for example is mentioned. The blending ratio of each component contained in the transparent resin composition and the blending ratio of each component contained in the transparent resin composition (transparent resin composition contained in the phosphor resin composition) and the blending ratio of each component and the like are repeated in a range .

As an inorganic substance, glass etc. are mentioned. The glass is not particularly limited, and examples thereof include alkali-free glass, soda glass, quartz glass, borosilicate glass, lead glass, and fluoride glass. Moreover, heat-resistant glass can also be mentioned as a glass, Specifically, it is commercially available as a brand name, such as Tempax Glass, Vico glass, Pyrex glass. As the glass, alkali-free glass and soda glass are preferably cited.

The refractive index RIt of the second transparent composition is a value obtained by subtracting the refractive index RIt of the second transparent composition from the refractive index RIp of the first transparent resin composition (the transparent resin composition contained in the phosphor layer 3) (RIp-RIt) is, for example, -1.0 or more, preferably -0.7 or more, more preferably 0 or more, more preferably 0.05 or more, particularly preferably 0.10 or more, and, for example, 0.20 or less Way to set. If RIp-RIt is more than the above lower limit, more excellent luminous intensity can be obtained. If the RIp-RIt is below the above upper limit, the reflection of light at the interface between the transparent layer 4 and the phosphor layer 3 can be suppressed. The transparent layer 4 may be formed of a plurality of layers, for example.

[Size] The size of LED2, phosphor layer 3, and transparent layer 4 can be appropriately set according to the application and purpose. The distance x (thickness x of LED2) is, for example, 10 μm or more, preferably 50 μm or more, and, for example, 1000 μm or less, preferably 500 μm or less. The length γ in the left-right direction and the length in the front-rear direction of the LED2 (not shown in FIG. 1) are the minimum lengths in the surface direction of the LED2, for example, 0.1 μm or more, preferably 0.2 μm or more, and, for example, 5000 μm or less, preferably Below 2000μm. The distance y (thickness y of the portion of the phosphor layer 3 that is arranged opposite to the upper side of the LED 2) is, for example, 50 μm or more, preferably 150 μm or more. Further, the distance y is, for example, 1000 μm or less, preferably 500 μm or less, more preferably less than 350 μm, still more preferably 300 μm or less, particularly preferably 200 μm or less, further 150 μm or less, and further 100 μm or less. If the distance y is lower than the above upper limit, the gas permeability of the phosphor layer 3 can be increased. When the LED device 60 is equipped with the phosphor layer sealed LED1, the phosphor layer 3 can be prevented from being burnt, and the phosphor layer sealed LED1 can be improved. Reliability, in turn, can improve the reliability of the LED device 60. The distance z (thickness z of the transparent layer 4) is, for example, 100 μm or more, preferably 200 μm or more. Furthermore, the distance z is, for example, 1000 μm or less, preferably 500 μm or less, more preferably less than 400 μm, still more preferably 300 μm or less, particularly preferably 200 μm or less, and most preferably 100 μm or less. If the distance z is less than the above upper limit, the gas permeability of the transparent layer 4 can be increased. When the LED device 60 is equipped with the phosphor layer sealed LED1, the transparent layer 4 can be prevented from being burnt, and the reliability of the phosphor layer sealed LED1 can be improved Therefore, the reliability of the LED device 60 can be improved. In addition, it is preferable that the LED 2, the phosphor layer 3, and the transparent layer 4 satisfy all of the following (1) to (4). (1) The value (y/x) obtained by dividing the distance y by the distance x is, for example, 1 or more, preferably 1.25 or more, and, for example, 5 or less, preferably less than 5, more preferably 4 or less, and further Preferably it is 3 or less. If y/x is more than the above lower limit, excellent color uniformity can be obtained. If y/x is not more than the above upper limit, color unevenness can be suppressed. (2) The sum (y+z) of the distance y and the distance z is, for example, 0.20 mm or more, preferably 0.25 mm or more, more preferably 0.5 mm or more, and, for example, 2 mm or less, preferably 1.5 mm or less. If y+z is more than the above lower limit, excellent luminous intensity can be obtained. If y+z is equal to or less than the above upper limit, material cost can be suppressed. (3) The distance α (the minimum length α of the side portion 35 of the phosphor layer 3) is, for example, 50 μm or more, preferably more than 50 μm, more preferably 100 μm or more, and for example, 2000 μm or less, preferably 1000 μm or less. If the distance α is more than the above lower limit, it is possible to prevent a decrease in color uniformity or suppress color unevenness. (4) The value (y/α) obtained by dividing the distance y by the distance α is, for example, 1 or more, preferably 1.2 or more, and, for example, 2.5 or less, preferably 2.0 or less. If y/α is equal to or less than the above upper limit, color unevenness can be suppressed.

[Manufacturing method of phosphor layer-sealed LED] Next, referring to Figures 2A~2F, the method of manufacturing the phosphor layer-sealed LED shown in Figure 1 and the method of manufacturing the LED device using the phosphor layer-sealed LED will be described. .

The manufacturing method of the phosphor layer-sealed LED1 includes the following steps: a step of manufacturing a sealing sheet 5 (refer to FIG. 2A) as an example of a cover sheet provided with a transparent layer 4 and a phosphor layer 3, so that the phosphor layer 3 is coated The step of arranging the sealing sheet 5 by a plurality of LEDs 2 (refer to FIG. 2C) and the step of cutting the sealing sheet 5 by singulating the LED1 sealed by the phosphor layer (refer to FIG. 2D). The step of manufacturing the sealing sheet 5 (refer to FIG. 2A) includes the step of preparing the transparent layer 4 and the step of forming the phosphor layer 3 on the surface of the transparent layer 4.

As shown in FIG. 2A, in the step of preparing the transparent layer 4, when the transparent layer 4 is formed from a transparent resin composition, a release sheet 6 shown by an imaginary line is first prepared.

The release sheet 2 is designed to be peelable to protect the transparent layer 4 during the period before the LED 2 is sealed by the transparent layer 4 (when the transparent layer 4 is formed from the thermosetting resin composition, the transparent layer 4 is cured) It is attached to the back surface of the transparent layer 4 (the lower surface in FIG. 1A). That is, the peeling sheet 6 is a flexible film that is laminated on the back of the transparent layer 4 by covering the back of the transparent layer 4 when the sealing sheet 5 is shipped, transported, and stored, and will be sealed immediately before use The sheet 5 was previously peeled from the back surface of the transparent layer 4 in a form that can be bent into a substantially U-shape. That is, the release sheet 6 includes only a flexible film. In addition, the bonding surface of the peeling sheet 6, that is, the contact surface with the transparent layer 4, may be subjected to peeling treatment such as fluorine treatment as necessary.

Examples of the release sheet 6 include polymer films such as polyethylene films and polyester films (PET etc.), such as ceramic sheets such as metal foils. Preferably, a polymer film can be cited. Moreover, the shape of the release sheet 2 is not specifically limited, For example, it is formed in a substantially rectangular shape (including a short strip shape and a long strip shape) in a plan view. The thickness of the release sheet 6 is, for example, 1 μm or more, preferably 10 μm or more, and, for example, is 2000 μm or less, preferably 1000 μm or less.

Then, when the transparent layer 4 is formed from the transparent resin composition, the varnish of the transparent resin composition is applied to the surface of the release sheet 6. When applying the transparent resin composition to the surface of the release sheet 6, for example, a coating device such as a dispenser, an applicator, and a slit die coater can be used.

The transparent resin composition is coated on the release sheet 6 to form a coating film of the transparent resin composition.

After that, the coating film is completely cured (C-staged). As heating conditions, the heating temperature is 80°C or higher, preferably 100°C or higher, and 200°C or lower, preferably 150°C or lower. In addition, the heating time is, for example, 10 minutes or more, preferably 30 minutes or more, and, for example, 5 hours or less.

With this, the A-stage transparent resin composition in the coating film is completely cured (C-staged).

When the transparent resin composition contains an addition reaction curable polysiloxane resin composition, the hydrosilylation reaction of the alkenyl group and/or cycloalkenyl group and the hydrosilyl group is carried out to the middle, and the reaction is temporarily stopped.

On the other hand, when the transparent resin composition contains a condensation reaction-addition reaction curable polysiloxane resin, the condensation reaction is terminated.

Thereby, the transparent layer 4 is formed from the B-stage transparent resin composition. On the other hand, when the transparent layer 4 is formed of an inorganic substance, specifically, an inorganic substance formed into a plate shape in advance is prepared. It is preferable to prepare a glass plate without using the peeling sheet 6 (the imaginary line in FIG. 2A).

Thereby, the transparent layer 4 is formed of an inorganic substance.

Then, as shown in FIG. 2A, a phosphor layer 3 is formed on the surface of the transparent layer 4.

When the phosphor layer 3 is formed from the phosphor resin composition, the phosphor resin composition is applied to the surface of the transparent layer 4 using the above-mentioned coating device. Thereby, a coating film of the phosphor resin composition is formed.

After that, when the phosphor resin composition contains a thermosetting resin composition that can be in a B-stage state, the coating film is B-staged. The heating conditions are the same as the above range. By this, the coating film is B-staged.

When the phosphor resin composition contains an addition reaction-curable polysiloxane resin composition, the hydrosilylation reaction of the alkenyl group and/or cycloalkenyl group and the hydrosilyl group is carried out to the middle, and the reaction is temporarily stopped.

On the other hand, when the phosphor resin composition contains a condensation reaction-addition reaction curable polysiloxane resin, the condensation reaction is terminated.

Thereby, the phosphor layer 3 is formed from the phosphor resin composition.

Then, the plate-shaped phosphor layer 3 is arranged on the upper surface of the transparent layer 4.

Thereby, as shown in FIG. 2A, the sealing sheet 5 provided with the transparent layer 4 and the phosphor layer 3 is obtained. Preferably, the sealing sheet 5 includes a transparent layer 4 and a phosphor layer 3.

The sealing sheet 5 has a flat plate shape, specifically, a specific thickness, and extends in the left-right direction and the front-rear direction, and has a flat front surface and a flat back surface. In addition, the sealing sheet 5 is a part of the LED device 60, that is, a part used to make the LED device 60 instead of the LED device 60 (see FIG. 2F below), and does not include the LED2 and the substrate 50 for LED2 mounting. Individual parts are circulated individually and are industrially available devices.

Furthermore, when the transparent layer 4 is formed of a transparent resin composition, the sealing sheet 5 includes a release sheet 6, a transparent layer 4, and a phosphor layer 3. Preferably, the sealing sheet 5 includes a release sheet 6, a transparent layer 4 and a phosphor layer 3.

In addition, as shown in FIG. 2B, a plurality of LEDs 2 are prepared. Specifically, a plurality of LEDs 2 are arranged on the upper surface of the support plate 7.

The support plate 7 is sealed by covering a plurality of LEDs 2 with the phosphor layer 3 to obtain a sealed LED assembly 8 (see FIG. 2C below). The sealed LED assembly 8 is cut to obtain the phosphor layer-sealed LED1, and then The LED1 sealed in the phosphor layer is peeled off. During this period, in order to protect the LED2 of the LED1 sealed in the phosphor layer, the support plate 7 is attached to the exposed surface of the LED2 of the LED1 sealed in the phosphor layer in a peelable manner (Figure 1 Middle and lower surface 21). That is, the support plate 7 is a peeling plate that supports the LED2 during shipment, transportation, and storage of the LED1 sealed in the phosphor layer, and is laminated on the lower surface 21 of the LED2 to cover the lower surface 21 of the LED2. 50 Before installing LED2, the LED1 sealed with the phosphor layer can be peeled off as shown by the imaginary line in Figure 2D. That is, the support plate 7 includes only a peeling plate.

The support plate 7 is formed of the same material as the above-mentioned release sheet 6. In addition, the support plate 7 may be formed of a thermally peelable sheet that can easily peel off the sealed LED assembly 8 by heating. Furthermore, a pressure-sensitive adhesive layer can be arranged on the surface of the support plate 7.

The thickness of the support plate 7 is, for example, 10 μm or more, preferably 50 μm or more, and for example, 1000 μm or less, preferably 100 μm or less.

In addition, a plurality of LEDs 2 are arranged on the surface (upper surface) of the support plate 7. Specifically, a plurality of LEDs 2 are arranged side by side at intervals in the left-right direction and the front-rear direction. In addition, a plurality of LEDs 2 are arranged on the surface (upper surface) of the support plate 7 in such a manner that the lower surface 21 (including the bumps not shown) of the LED 2 contacts the surface (upper surface) of the support plate 7.

The distance P between a plurality of LED2, that is, the sum P of the distance between one LED2 and one LED2 and the adjacent LED2 is, for example, 0.3mm or more, preferably 0.5mm or more, and, for example, 5mm or less, preferably 3mm or less . In addition, the distance between the plurality of LEDs 2 is, for example, 0.1 mm or more, preferably 0.3 mm or more, and, for example, 3 mm or less, preferably 2 mm or less.

After that, as shown by the arrow of FIG. 2B and FIG. 2C, the plurality of LEDs 2 are sealed by the sealing sheet 5.

For example, the sealing sheet 5 is crimped to the supporting plate 7 supporting a plurality of LEDs 2. Preferably, the sealing sheet 5 is thermally press-bonded (heat-pressed) to the supporting plate 7 supporting a plurality of LEDs 2.

Specifically, first, the sealing sheet 5, the plurality of LEDs 2, and the support plate 7 are set in a flat plate press machine equipped with a heat source, or the like. Although not shown in the figure, the plate press is equipped with a lower mold and an upper mold opposed to the upper side. Specifically, the release sheet 6 is arranged on the upper surface of the lower mold so that the plurality of LEDs 2 face upward. In addition, the sealing sheet 5 shown in FIG. 2A is turned upside down so that the phosphor layer 3 faces downward, and the peeling sheet 6 is arranged on the lower surface of the upper mold even if the phosphor layer 3 and the LED 2 face each other.

In addition, the sealing sheet 5, the plurality of LEDs 2 and the support plate 7 are hot-pressed by a flat press.

Regarding the temperature of the plate press, when the phosphor layer 3 and/or the transparent layer 4 contains a phenyl-based silicone resin composition with thermoplasticity and thermosetting, the temperature is a phenyl-based silicone resin composition The thermosetting temperature or higher of the material is preferably the thermosetting temperature or higher from the viewpoint of performing the thermoplasticizing and thermosetting of the phenyl-based silicone resin composition at one time. Specifically, for example, 60°C or higher, preferably 80°C or higher, and, for example, 150°C or lower, preferably 120°C or lower.

The pressing pressure is, for example, 0.1 MPa or more, preferably 1 MPa or more, and, for example, 10 MPa or less, preferably 5 MPa or less.

The pressing time is, for example, 1 minute or more, preferably 5 minutes or more, and, for example, 60 minutes or less, preferably 20 minutes or less.

When the phosphor layer 3 contains a phenyl-based polysiloxane resin composition having thermoplasticity and thermosetting properties, the phosphor layer 3 is plasticized by the above-mentioned hot pressing. Then, a plurality of LEDs 2 are embedded in the phosphor layer 3 after plasticization. Specifically, as shown in FIG. 1, the upper surface 22 and the side surface 23 of the LED 2 are covered by the phosphor layer 3.

In addition, when the transparent layer 4 contains a phenyl-based polysiloxane resin composition having thermoplasticity and thermosetting properties, the transparent layer 4 is plasticized by the above-mentioned hot pressing, so as to adhere to the phosphor layer 3 closely.

Thereby, as shown in FIG. 2C, a plurality of LEDs 2 are sealed by the phosphor layer 3 of the sealing sheet 5.

After that, when the phosphor layer 3 and/or the transparent layer 4 contains the two-stage reaction curable resin composition in a B-staged state, it is C-staged.

When the two-stage reaction curable resin composition contains a phenyl silicone resin composition, in the reaction of the phenyl silicone resin composition (C-stage reaction), the polysiloxane containing alkenyl groups The hydrosilylation addition reaction of the alkenyl and/or cycloalkenyl group and the hydrosilyl group of the polysiloxane containing hydrogen silyl group can be further promoted. After that, the alkenyl group and/or cycloalkenyl group, or the hydrosilyl group of the polysiloxane containing the hydrosilyl group disappears, and the hydrosilylation addition reaction is completed, thereby obtaining a C-stage phenyl-based polysiloxane resin The product of the composition is the hardened product. That is, by the completion of the hydrosilation addition reaction, the phenyl-based polysiloxane resin composition exhibits curability (specifically, thermosetting).

The above-mentioned product system is represented by the following average composition formula (3). Average composition formula (3): R ⁵ _e SiO _(4-e)/2 (In the formula, R ⁵ represents an unsubstituted or substituted monovalent hydrocarbon group with 1 to 10 carbon atoms (wherein, alkene (Except for group and cycloalkenyl). e is 0.5 or more and 2.0 or less)

The unsubstituted or substituted monovalent hydrocarbon group with 1 to 10 carbons represented by R ⁵ can be exemplified by the unsubstituted or substituted carbon number of 1 to 10 represented by R ² of formula (1) The monovalent hydrocarbon group is the same as the unsubstituted or substituted monovalent hydrocarbon group with 1 to 10 carbon atoms represented by R ³ of formula (2). Preferably, an unsubstituted monovalent hydrocarbon group is used, more preferably, an alkyl group having 1 to 10 carbon atoms and an aryl group having 6 to 10 carbon atoms are used, and a combination of a phenyl group and a methyl group is more preferably used.

e is preferably 0.7 or more and 1.0 or less.

In addition, the content of the phenyl group in R ⁵ of the average composition formula (3) of the product is, for example, 30 mol% or more, preferably 35 mol% or more, and, for example, 55 mol% or less, preferably It is less than 50 mol%.

The content ratio of the phenyl group in R ⁵ in the average composition formula (3) of the product is the benzene in the monovalent hydrocarbon group directly bonded to the silicon atom (in the average composition formula (3), represented by R5) Base concentration.

The content ratio of the phenyl group in R ⁵ of the average composition formula (3) of the product was calculated by ¹ H-NMR and ²⁹ Si-NMR. The detailed calculation method of the content ratio of the phenyl group in R ⁵ is based on the description of WO2011/125463 etc., and calculated by ¹ H-NMR and ²⁹ Si-NMR, for example.

Then, as shown by the arrow in FIG. 2C, the peeling sheet 6 is peeled from the transparent layer 4.

Thereby, a sealed LED assembly 8 including a plurality of LEDs 2, a phosphor layer 3 and a transparent layer 4 is obtained in a state supported by the support plate 7.

Thereafter, as shown by the single-dot chain line in FIG. 2D, the sealed LED assembly 8 is cut so that the plurality of LEDs 2 are singulated. Specifically, the phosphor layer 3 and the transparent layer 4 corresponding to each LED 2 are cut in the front-rear direction and the left-right direction. Thereby, in a state supported by the support plate 7, an LED1 sealed with a phosphor layer with one LED2, a phosphor layer 3 embedded and covered with the LED2, and a transparent layer 4 arranged on the upper surface of the phosphor layer 3 is obtained.

Then, as shown by the arrow and imaginary line in FIG. 2D, the LED1 sealed in the phosphor layer is peeled off from the support plate 7.

Thereby, as shown in FIG. 2E, a phosphor layer-sealed LED1 provided with one LED2, a phosphor layer 3 embedded and covered with the LED2, and a transparent layer 4 arranged on the upper surface of the phosphor layer 3 is obtained.

The phosphor layer sealed LED1 does not include the support plate 7 (refer to FIG. 2C) and the substrate 50 (refer to the following FIG. 2F), and preferably includes the LED2, the phosphor layer 3, and the transparent layer 4. That is, the LED1 sealed in the phosphor layer is not the LED device 60 (FIG. 2F) described below, that is, it does not include the substrate 50 included in the LED device 60. That is, the LED1 sealed in the phosphor layer is constituted so as not to be electrically connected to the terminal (not shown) provided on the substrate 50 of the LED device 60. In addition, the phosphor layer-sealed LED1 is a component of the LED device 60, that is, a component used to make the LED device 60, and is distributed as an individual component, which is an industrially available device.

Thereafter, a plurality of LEDs 1 sealed with a phosphor layer are screened according to the emission wavelength or the emission efficiency.

Then, as shown in FIG. 2F, the LED1 sealed in the phosphor layer is mounted on the substrate 50.

Specifically, first, a substrate 50 provided with terminals (not shown) on the upper surface is prepared.

The substrate 50 has a substantially rectangular flat plate shape extending in the front-rear direction and the left-right direction, for example, an insulating substrate. In addition, the substrate 50 has terminals (not shown) arranged on the upper surface.

After that, as shown in FIG. 2F, the LED1 sealed in the phosphor layer is mounted on the substrate 50.

Specifically, the bumps (not shown) of the LED2 in the LED1 sealed by the phosphor layer are brought into contact with the terminals (not shown) of the substrate 50 to electrically connect them. That is, the LED2 of the LED1 sealed in the phosphor layer is flip-chip mounted on the substrate 50. In addition, the lower surface 32 of the phosphor layer 3 is brought into contact with the substrate 50.

Thereby, an LED device 60 including a substrate 50 and a phosphor layer sealed LED1 mounted on the substrate 50 is obtained. Preferably, the LED device 60 includes a substrate 50 and an LED 1 sealed with a phosphor layer. That is, the LED device 60 does not include the peeling sheet 6 and/or the support plate 7, and preferably includes the substrate 50, the LED 2, the phosphor layer 3, and the transparent layer 4.

[Effects of the first embodiment]

In addition, as shown in FIG. 1, the phosphor layer-sealed LED 1 includes a transparent layer 4 covering the upper surface 31 of the phosphor layer 3, so that the luminous intensity can be improved. Specifically, the interface between the transparent resin composition (transparent layer 4) and the air can be kept away (away) from the substrate 50 as a light absorber or the LED2 (the interface between the LED2 and the phosphor layer 3). Therefore, the light emitted from the LED2 toward the upper side and wavelength-converted by the phosphor layer 3 and light that has not been wavelength-converted by the phosphor layer 3 but transmitted through the phosphor layer 3 occurs even at the interface between the transparent resin composition (transparent layer 4) and the air. The reflection is also difficult to retroreflect to the substrate 50 or the LED2 (light absorber), so the luminous intensity of the LED1 sealed with the phosphor layer can be improved.

In addition, the phosphor layer-sealed LED1 satisfies all of (1) to (4) of x, y, z, and α. Therefore, the luminous intensity can be further improved and the color uniformity is excellent, and the color is suppressed. Uneven.

Moreover, in the LED1 sealed with the phosphor layer, if the first transparent composition (the transparent resin composition contained in the phosphor layer 3) has a refractive index RIp of 1.45 or more and 1.60 or less, the phosphor layer can be sealed The luminous intensity of LED1 is improved.

In addition, in the LED1 sealed in the phosphor layer, if the refractive index RIp of the first transparent composition (the transparent resin composition contained in the phosphor layer 3) is subtracted from the second transparent composition (the transparent resin composition contained in the transparent layer 4) The value obtained by the refractive index RIt of the transparent resin composition (refractive index RIp-refractive index RIt) is -0.70 or more and 0.20 or less, and the luminous intensity of the LED1 sealed in the phosphor layer can be improved.

In addition, in the LED1 sealed in the phosphor layer, if the RIp-RIt is 0.05 or more, the luminous intensity of the LED1 sealed in the phosphor layer can be further improved.

In addition, in the LED1 sealed with the phosphor layer, if the distance α exceeds 50 m, the color uniformity can be improved.

According to the manufacturing method of the phosphor-layer-sealed LED1, the sealing sheet 5 is used to easily manufacture the phosphor-layer-sealed LED1.

According to the manufacturing method of the phosphor layer-sealed LED1, the phosphor layer-sealed LED1 having the required dimensions (y, z, α, etc.) can be easily manufactured.

[Change example]

In the modified example, the same reference numerals are given to the same members and steps as in the first embodiment described above, and detailed descriptions thereof are omitted.

In the first embodiment, the LED2, the phosphor layer 3, and the transparent layer 4 are each formed into a substantially rectangular shape in plan view, but the shape is not particularly limited. Although not shown, the LED2, the phosphor layer 3, and the transparent layer 4 may be respectively formed in a substantially circular shape in a plan view and a substantially polygonal shape in a plan view (except for a substantially rectangular shape).

Furthermore, in the first embodiment, as shown in FIG. 1, the transparent layer 4 is formed in a substantially rectangular cross-sectional view. Although not shown, it may be formed in a cross-sectional dome shape (or convex lens shape) with a curved upper surface, for example. . In this case, the distance z is the distance from the upper surface 31 of the phosphor layer 3 to the uppermost surface of the transparent layer 4.

Furthermore, the transparent layer 4 may be formed in a substantially conical shape whose horizontal cross section gradually decreases toward the upper side, specifically, a polygonal hammer shape such as a quadrangular pyramid and a triangular pyramid.

Furthermore, in the first embodiment, as shown in FIG. 1, the surrounding lower surface 32 of the accommodating portion 30 of the phosphor layer 3 is constituted in the form of a phosphor-side contactable surface that can contact the substrate 50. However, for example, as shown in FIG. 5, the lower surface 32 may be configured in a form that can be separated from the substrate 50 by an interval to ensure a possible surface.

As shown in FIG. 5, the surrounding lower surface 32 of the receiving portion 30 of the phosphor layer 3 is exposed from the LED 2 and is located on the upper side of the lower surface 21 of the LED 2. Specifically, the lower surface 32 of the phosphor layer 3 is located between the lower surface 21 and the upper surface 22 of the LED 2 when projected in the plane direction. That is, the lower surface 32 of the phosphor layer 3 is disposed at a position included in the side surface 23 of the LED 2 when projecting in the front-rear direction and the left-right direction.

Thereby, the lower surface 32 of the phosphor layer 3 exposes the lower end of the side surface 23 of the LED2.

Furthermore, in the first embodiment, the phosphor layer 3 and the transparent layer 4 are sequentially C-staged, that is, the phosphor layer 3 is C-staged, and then the transparent layer 4 is C-staged, for example, The phosphor layer 3 and the transparent layer 4 in the B-stage state can be simultaneously C-staged.

Furthermore, in the first embodiment described above, as shown in FIGS. 2A to 2E, the sealing sheet 5 is formed on the peeling sheet 6, and then the LED 2 is sealed by the sealing sheet 5.

However, as shown in FIGS. 3A to 4H, the sealing sheet 5 is not formed on the release sheet 6, and the varnish of the phosphor resin composition and the transparent resin composition are sequentially dripped (infused) on the support plate 7 The varnish can form the phosphor layer 3 and the transparent layer 4 in sequence.

In this method, as shown in FIG. 3C, the varnish of the phosphor resin composition is dripped (poured) onto the support plate 7.

When dripping the varnish of the phosphor resin composition onto the support plate 7, first, as shown in FIG. 3A, one LED 2 is arranged on the upper surface of the support plate 7. In this way, one LED2 supported by the support board 7 is prepared.

In addition, as shown in FIG. 3A, the first barrier rib 11 is prepared.

The first barrier rib 11 is formed in a substantially rectangular shape in plan view. In addition, a first opening 13 that penetrates the first barrier 11 in the vertical direction is formed at the center of the first barrier 11. The first opening 13 is formed into a substantially rectangular shape in plan view corresponding to the outer shape of the phosphor layer 3.

Examples of the material of the first barrier rib 11 include resin, resin-impregnated glass cloth, metal, and the like. These can be used alone or in combination. Preferably, resins are cited.

Examples of resins include thermosetting resins and thermoplastic resins. Preferably, a thermosetting resin is used. As the thermosetting resin, it is preferable to use a single-stage reaction-curing resin that cannot be in a B-stage state. As such a one-stage reaction curable resin, a one-stage reaction curable methyl silicone resin composition can be mentioned. As a one-stage reaction curable methyl silicone resin composition, for example, ELASTOSIL series (manufactured by Wacker Asahikasei Silicone, specifically, methyl silicone resin compositions such as ELASTOSIL LR7665), KER series (Shin -Etsu Silicones Corporation) and other commercially available products.

Furthermore, the resin can also be prepared in the form of a resin composition with fillers.

The thickness of the first barrier rib 11 is, for example, 100 μm or more, preferably 200 μm or more, more preferably 400 μm or more, and, for example, 1500 μm or less.

Then, as shown in FIG. 3B, the first barrier rib 11 is arranged on the upper surface of the support plate 7 so as to surround the LED 2.

When the first barrier rib 11 is placed on the upper surface of the support plate 7 so as to surround the LED2, first, when the material of the first barrier rib 11 is resin, a varnish containing resin is prepared, and then the varnish is applied to the substrate. The surface of the peeling sheet shown in the figure. After that, when the material contains a thermosetting resin, the varnish is heated to harden it. Thereafter, the outer shape of the hardened product is processed into the above-mentioned pattern.

After that, as shown by the arrows in FIG. 3A and FIG. 3B, the first barrier rib 11 is placed on the upper surface of the support plate 7 such that the LED 2 is inserted into the first opening 13 of the first barrier rib 11.

Alternatively, as shown in FIG. 3B, the varnish is directly coated around the LED 2 in the above-mentioned pattern, and the first barrier rib 11 is directly formed on the upper surface of the support plate 7.

Thereby, the first barrier rib 11 is arranged on the upper surface of the support plate 7 so as to surround the LED 2.

Then, as shown in FIG. 3C, the varnish of the phosphor resin composition is dripped into the first opening 13 of the first barrier 11 of the support plate 7. Specifically, the varnish is dropped into the first opening 13 so that the liquid surface of the varnish and the upper surface of the first barrier rib 11 become the same surface.

After that, when the phosphor resin composition contains a thermosetting resin composition that can be in a B-stage state, the phosphor resin composition is B-staged.

Thereby, the phosphor layer 3 covering the upper surface 22 and the side surface 23 of the LED 2 is formed in the first opening 13 of the first barrier rib 11.

Then, as shown by the arrow in FIG. 3C, the first barrier rib 11 is peeled off from the support plate 7. At this time, the side surface of the first opening 13 of the first barrier rib 11 is peeled from the side surface 33 of the phosphor layer 3.

Then, as shown in FIGS. 3D and 3E, the second barrier rib 12 is arranged on the upper surface of the support plate 7.

The second barrier rib 12 is configured in the same manner as the first barrier rib 11 described above except for the thickness. The thickness of the second barrier rib 12 is formed thicker than the thickness of the first barrier rib 11, and specifically adjusted to a thickness that can be embedded in the phosphor layer 3 and can form the transparent layer 4. The thickness of the second barrier rib 12 is, for example, 0.1 μm or more, preferably 0.2 μm or more, and for example, 2 μm or less, preferably 1 μm or less.

As shown in FIG. 3D, when the second barrier rib 12 is viewed from above, a second opening 14 having the same shape as that of the phosphor layer 3 is formed.

As shown in FIG. 3E, on the support plate 7, the second barrier rib 12 is placed on the upper surface of the support plate 7 in such a manner that the phosphor layer 3 is inserted into the second opening 14. Thereby, the phosphor layer 3 is fitted into the second opening 14.

Thereafter, as shown in FIG. 4F, the varnish of the transparent resin composition is dripped (poured) into the second opening 14 on the upper surface of the phosphor layer 3. Specifically, the varnish is dropped into the second opening 14 so that the liquid surface of the varnish and the upper surface of the second barrier rib 12 become the same surface.

After that, when the transparent resin composition contains a thermosetting resin composition that can be in a B-stage state, the transparent resin composition is thermoset (specifically, C-staged). Thereby, the transparent layer 4 is formed on the upper surface of the phosphor layer 3.

When the transparent resin composition is C-staged, if the phosphor resin composition of the phosphor layer 3 is in the B-staged state of the two-stage reaction curable resin composition, it is C-staged.

Thereafter, as shown in FIG. 4G, the phosphor layer 3, the transparent layer 4 and the second barrier rib 12 are cut along the interface.

Thereby, a phosphor layer-sealed LED1 provided with one LED2, a phosphor layer 3, and a transparent layer 4 is obtained in a state supported by the support plate 7.

Then, as shown by the arrows in FIG. 4G, the imaginary line and in FIG. 4H, the LED1 sealed with the phosphor layer is peeled off from the support plate 7.

Thereafter, the LED1 sealed in the phosphor layer is screened according to the emission wavelength or the emission efficiency.

Thereafter, as shown in FIG. 4I, the LED1 sealed in the phosphor layer is mounted on the substrate 50.

Furthermore, according to the method of FIGS. 4A to 4I, since it is not necessary to temporarily manufacture the sealing sheet 5 on the release sheet 6 as in the first embodiment (refer to FIG. 2A), the varnish and transparent resin of the phosphor resin composition can be used. The varnish of the composition simply forms the phosphor layer 3 and the transparent layer 4 in sequence.

>Second Embodiment>

In the second embodiment, the same reference numerals are given to the same members and steps as in the above-mentioned first embodiment, and detailed descriptions thereof are omitted.

[LED sealed with phosphor layer]

In the first embodiment, the side surface 33 of the phosphor layer 3 is exposed as shown in FIG. 1. However, in the second embodiment, as shown in FIG. 6, the side surface 33 of the phosphor layer 3 is covered by the transparent layer 4.

That is, the transparent layer 4 covers the upper surface 31 and the side surface 33 of the phosphor layer 3. In addition, the transparent layer 4 is formed in a shape including the phosphor layer 3 when viewed from above. The transparent layer 4 has a side portion 45 covering the side surface 33 of the phosphor layer 3. In addition, the lower surface 41 of the side portion 45 of the transparent layer 4 is a transparent side contact surface that can be in contact with the substrate 50 (imaginary line).

In addition, since the transparent layer 4 has the side portion 45, the side surface 43 (transparent side connecting surface) of the transparent layer 4 is arranged opposite to the outer side of the side surface 33 of the phosphor layer 3 by a distance β.

The distance β between the side surface 43 of the transparent layer 4 and the side surface 33 of the phosphor layer 3 is the left-right direction length and the front-rear direction length (the minimum length) of the side portion 45 of the transparent layer 4.

The distance β can be appropriately selected from a range exceeding 0.

In the second embodiment, it is preferable to satisfy the following (3)' instead of (3) in (1) to (4) of the first embodiment.

(3) The sum (α+β) of the distance a and the distance β is, for example, 50 μm or more, preferably more than 50 μm, more preferably 100 μm or more, and for example, 2000 μm or less, preferably 1000 μm or less. If α+β is greater than or equal to the above lower limit, it is possible to prevent a decrease in color uniformity or suppress color unevenness. If α+β is less than the above upper limit, wasteful use of materials can be suppressed.

Furthermore, in the first embodiment, β is zero. Therefore, in the present invention, β is preferably 0 or more.

[Manufacturing method of LED sealed with phosphor layer]

Next, referring to FIGS. 7A to 8L, the method of manufacturing the phosphor layer sealed LED shown in FIG. 6 and the method of manufacturing the LED device using the phosphor layer sealed LED will be described.

The method of manufacturing a phosphor layer-sealed LED1 includes the following steps: a step of manufacturing a phosphor sealing sheet 15 with a phosphor layer 3 (an example of a phosphor layer preparation step, refer to FIG. 7A), so that the phosphor layer 3 is covered with plural The step of arranging the fluorescent sealing sheet 15 for each LED2 (an example of the phosphor layer placement step, refer to FIG. 7B), and the step of removing the phosphor layer 3 located at a distance from the LED2 (the singulation/removal step) For an example, refer to FIG. 7D), a step of manufacturing a transparent sheet 18 with a transparent layer 4 (an example of a transparent layer preparation step, refer to FIG. 8G), and a step of relocating the LED1 sealed in the phosphor layer on the second support plate 17 ( Refer to FIG. 8G), and the step of disposing the transparent sheet 18 on the phosphor layer 3 (an example of the transparent layer disposing step, FIG. 8H).

In this method, first, as shown in FIG. 7A, a plurality of LEDs are prepared.

In addition, the fluorescent sealing sheet 15 provided with the phosphor layer 3 is prepared.

When preparing the fluorescent sealing sheet 15, first, as shown in FIG. 7A, the peeling sheet 6 is prepared.

Then, the phosphor layer 3 is formed in a sheet shape on the lower surface of the release sheet 6. The method of forming the phosphor layer 3 is the same as the method of forming the phosphor layer 3 in the first embodiment.

Thereby, the fluorescent sealing sheet 15 provided with the peeling sheet 6 and the phosphor layer 3 formed on the lower surface of the peeling sheet 6 is prepared.

Furthermore, the fluorescent sealing sheet 15 does not have the transparent layer 4 described below (refer to FIG. 8G). Preferably, the fluorescent sealing sheet 15 includes a release sheet 6 and a phosphor layer 3.

Then, as shown in FIG. 7B, a plurality of LEDs 2 are sealed by the phosphor layer 3. That is, the fluorescent sealing sheet 15 is press-bonded to the support plate 7 supporting the LED2. Thereby, a plurality of LEDs 2 are buried in the lower surface 32 of the fluorescent sealing sheet 15 to form a shape corresponding to the surface of the plurality of LEDs 2. On the other hand, the upper surface 31 of the phosphor layer 3 of the fluorescent sealing sheet 15 is formed flat. Furthermore, the phosphor layer 3 covers the side surface 23 and the upper surface 22 of the LED 2.

After that, in this method, as shown in FIG. 7C, the peeling sheet 6 is peeled from the phosphor layer 3.

Then, in this method, as shown in FIG. 7D, the phosphor layer 3 located far away from the LED 2 is removed.

Specifically, a disc-shaped wafer dicing saw (dicing blade) 9 having a specific width (wall thickness) is used to cut the phosphor layer 3 located far away from the LED 2. Thereby, in the phosphor layer 3, the length α of the side portion 35 is adjusted to a desired size. That is, the outer shape of the phosphor layer 3 is processed so as to have a specific size.

At the same time, the LED1 sealed in the phosphor layer is singulated. That is, the fluorescent sealing sheet 15 is cut so that the LED1 sealed in the phosphor layer is singulated. At this time, the phosphor layer 3 covering the side surface 23 of the LED 2 is left.

Then, as shown in FIG. 7E, the LED1 sealed by the singulated phosphor layer is peeled off from the support plate 7.

Thereby, a phosphor layer sealed LED1 provided with LED2 and phosphor layer 3 having a specific size is obtained. In this second embodiment, the LED1 sealed with the phosphor layer shown by the imaginary line in FIG. 7E and the solid line in FIG. 7F does not have the transparent layer 4. That is, the LED1 sealed with the phosphor layer preferably includes the LED2 and the phosphor layer 3.

In this method, then, as shown in FIG. 8G, the LEDs 1 with a plurality of phosphor layers sealed are arranged on the second support plate 17 at intervals in the front-rear direction and the left-right direction. That is, the LED1 sealed in the phosphor layer is further arranged on the second support plate 17.

The second support plate 17 has the same structure as the support plate 7 described above.

In addition, as shown in FIG. 8G, a transparent sheet 18 provided with a transparent layer 4 is prepared.

When preparing the transparent sheet 18, first, as shown in FIG. 8G, the transparent layer 4 is formed in a sheet shape on the lower surface of the second release sheet 19. The second release sheet 19 has the same configuration as the above-mentioned release sheet 6. The method of forming the transparent layer 4 is the same as the method of forming the phosphor layer 3 in the first embodiment. The second transparent composition preferably contains a filler.

Thereby, a transparent sheet 18 including the second release sheet 19 and the transparent layer 4 formed on the lower surface of the second release sheet 19 is prepared.

In addition, the transparent sheet 18 does not have the phosphor layer 3 described above. Preferably, the transparent sheet 18 includes the second release sheet 19 and the transparent layer 4.

Then, in this method, as shown in FIG. 8H, the plurality of phosphor layers 3 covering the plurality of LEDs 2 are covered by the transparent layer 4.

Specifically, the second peeling sheet 19 is pressure-bonded to the second supporting plate 17 supporting the LED1 of the phosphor layer sealing.

Furthermore, when the transparent resin composition contains a phenyl-based silicone resin composition in a B-stage (semi-cured) state, thermocompression bonding is performed. In this way, the B-stage phenyl-based silicone resin composition is temporarily plasticized by heating, whereby the transparent resin composition is filled between the plurality of phosphor layers 3. After that, the transparent resin composition is completely cured.

Next, as shown in FIG. 8I, the second release sheet 19 is peeled from the transparent layer 4.

As a result, as shown in FIG. 8I, by laminating the phosphor layer 3 with the transparent layer 4, a sealed LED assembly 8 with a plurality of LEDs 2 sealed in a state supported by the second support plate 17 is obtained.

Next, as shown in FIG. 8J, the sealed LED assembly 8 is cut so that a plurality of LEDs 2 are singulated.

Then, as shown by the arrow in Fig. 8J and Fig. 8K, the plurality of phosphor-layer-sealed LEDs are peeled off from the support plate 7 to obtain the phosphor-layer-sealed LED1.

Thereafter, as shown in FIG. 8L, the phosphor layer-sealed LED1 is mounted on the substrate 50 to obtain an LED device 60. Specifically, referring to the imaginary line in FIG. 6, the lower surface 41 of the side portion 45 of the transparent layer 4 is brought into contact with the substrate 50.

[Effects of the second embodiment]

In addition, in this phosphor layer-sealed LED1, as shown in FIG. 6, the transparent layer 4 has a side portion 45 covering the side surface 33 of the phosphor layer 3. Therefore, a transparent resin composition can be used as in the first embodiment ( The interface between the transparent layer 4) and the air is far away from (leaves) the substrate 50 as a light absorber or the LED2 (the interface between the LED2 and the phosphor layer 3). Therefore, the light emitted from the LED2 toward the upper side and wavelength-converted by the phosphor layer 3 and light that has not been wavelength-converted by the phosphor layer 3 but transmitted through the phosphor layer 3 occurs even at the interface between the transparent resin composition (transparent layer 4) and the air. The reflection is also difficult to retroreflect to the substrate 50 or the LED2 (light absorber), so the luminous intensity of the LED1 sealed with the phosphor layer can be improved.

On the other hand, in this second embodiment, as shown in FIG. 8G, the LED1 with the phosphor layer sealed with the phosphor layer 3 is then arranged on another support stand that is different from the support plate 7, namely the second 2 The support plate 17, and then, as shown in FIG. 8H, the phosphor layer 3 is covered by the transparent layer 4.

On the other hand, in the method of the first embodiment, unlike the second embodiment as described above, there is no need to relocate the LED 2 provided with the phosphor layer 3 on the second support plate 17. Therefore, LED1 sealed with a phosphor layer is manufactured by a simple method.

In addition, the phosphor layer 3 and the transparent layer 4 in the LED1 sealed in the phosphor layer can form the side surface 33 and the side surface 43, respectively, by simple methods such as cutting.

As shown in FIG. 7A, the manufacturing method of the phosphor layer-sealed LED1 includes preparing the phosphor layer preparation step of the phosphor-sealing sheet 15 provided with the sheet-shaped phosphor layer 3, and arranging the sheet-shaped one to cover the LED2. The phosphor layer arrangement step of the phosphor layer 3, therefore, the use of the sheet-shaped phosphor layer 3 can easily manufacture the phosphor layer-sealed LED 1 with excellent luminous intensity.

Furthermore, according to the manufacturing method of the phosphor layer-sealed LED1, as shown in FIG. 7D, in the singulation/removal step, after the phosphor layer placement step and before the transparent layer placement step, the phosphor layer 3 corresponds to When a plurality of LEDs 2 are singulated, the phosphor layer 3 located far away from the LED 2 is removed. Therefore, the LED 1 with the phosphor layer sealed with the required size can be manufactured in a small number of steps.

Furthermore, according to the manufacturing method of the phosphor layer-sealed LED1, as shown in FIG. 7D, in the singulation/removal step, the phosphor layer 3 covering the side surface 23 of the LED2 is left, so it can be easily manufactured The size of the phosphor layer 3 of the phosphor layer sealed LED1.

In addition, according to the method of manufacturing the phosphor layer-sealed LED1, the sheet-shaped transparent layer 4 is used as shown in FIG. 8G, so that the phosphor-layer-sealed LED1 with excellent luminous intensity can be easily manufactured.

[Change example]

In the second embodiment, as shown in FIG. 6, the lower surface 32 around the receiving portion 30 of the phosphor layer 3 and the lower surface 41 of the side portion 45 of the transparent layer 4 are respectively made of phosphors that can contact the substrate 50. The contact surface on the light body side and the contact surface on the transparent side are formed. However, as shown in FIG. 9, for example, the lower surface 32 of the surrounding portion 30 of the phosphor layer 3 and the lower surface 41 of the side portion 45 of the transparent layer 4 may be separated from the substrate 50 by a distance Ensure the possible form of composition.

As shown in FIG. 9, the surrounding lower surface 32 of the accommodating portion 30 of the phosphor layer 3 and the lower surface 41 of the side portion 45 of the transparent layer 4 are located higher than the lower surface 21 of the LED 2. Specifically, the lower surface 32 around the receiving portion 30 of the phosphor layer 3 and the lower surface 41 of the side portion 45 of the transparent layer 4 are located between the lower surface 21 and the upper surface 22 of the LED2 when projected in the plane direction between. That is, the lower surface 32 around the accommodating portion 30 of the phosphor layer 3 and the lower surface 41 of the side portion 45 of the transparent layer 4 are arranged in a position included in the side surface 23 of the LED 2 when projecting in the front-rear direction and the left-right direction .

Furthermore, in the second embodiment, as shown in FIG. 7B, the upper surface 31 of the phosphor layer 3 of the fluorescent sealing sheet 15 is formed flat, but for example, as shown in FIG. 10B, the phosphor layer 3 The upper surface 31 is formed into a concave-convex shape corresponding to the surface of the plurality of LEDs 2.

Such a modification example includes the following steps: a step of manufacturing a fluorescent sealing sheet 15 with a phosphor layer 3 (an example of a phosphor layer preparation step, refer to FIG. 10A), and arranging the phosphor layer 3 to coat a plurality of LEDs 2 The step of the fluorescent sealing sheet 15 (an example of the phosphor layer placement step, refer to FIG. 10B), the step of removing the phosphor layer 3 located at a distance from the LED2 (an example of the removal step, refer to FIG. 10D), the manufacturing equipment The step of the transparent sheet 18 of the transparent layer 4 (an example of the transparent layer preparation step, refer to FIG. 8G), the step of relocating the LED1 sealed in the phosphor layer on the second support plate 17 (refer to FIG. 8G), and the transparent sheet The step of disposing the material 18 on the phosphor layer 3 (FIG. 8H).

In this method, first, as shown in FIG. 10A, a plurality of LEDs are prepared.

In addition, the fluorescent sealing sheet 15 provided with the phosphor layer 3 is prepared. When preparing the fluorescent sealing sheet 15, first, as shown in FIG. 10A, the peeling sheet 6 is prepared.

Then, the phosphor layer 3 is formed on the lower surface of the release sheet 6. Thereby, the fluorescent sealing sheet 15 provided with the peeling sheet 6 and the phosphor layer 3 formed on the lower surface of the peeling sheet 6 is prepared.

Then, as shown in FIG. 10B, a plurality of LEDs 2 are sealed by the phosphor layer 3. That is, the fluorescent sealing sheet 15 is press-bonded to the support plate 7 supporting the LED2. At this time, the fluorescent sealing sheet 15 is press-bonded to the LED2 and the support plate 7 by a press machine which is arranged on the upper side of the peeling sheet 6 and includes an upper mold having recesses corresponding to a plurality of LEDs 2 and a flat lower mold. . The phosphor layer 3 has a plurality of protrusions corresponding to the plurality of LEDs 2 by the above pressing. The release sheet 6 is coated on the surface of the phosphor layer 3 (the side surface including the surface of the protrusion).

After that, in this method, as shown in FIG. 10C, the peeling sheet 6 is peeled from the phosphor layer 3.

Then, in this method, as shown in FIG. 10D, the phosphor layer 3 is cut, and then, as shown in FIG. 10E, the LED 1 is singulated into the phosphor layer sealed. Thereafter, the LED1 sealed by the singulated phosphor layer is peeled off from the support plate 7.

That is, as shown in FIG. 10D, the phosphor layer 3 is subjected to outer shape processing so as to have a specific size. In this way, the phosphor layer 3 located far away from the LED 2 is removed.

Thereby, as shown in FIG. 10E, a phosphor layer-sealed LED1 provided with an LED2 and a phosphor layer 3 having a specific size is obtained. In this second embodiment, the LED1 sealed with the phosphor layer shown by the imaginary line in FIG. 10D and the solid line in FIG. 10E does not have the transparent layer 4. That is, the LED1 sealed with the phosphor layer preferably includes the LED2 and the phosphor layer 3.

Thereafter, the transparent layer 4 is laminated on the phosphor layer 3 in the same manner as in the second embodiment (FIG. 8G to FIG. 8L).

Specifically, as shown in FIG. 8G, first, a plurality of LEDs 1 sealed with a phosphor layer are arranged on the second support plate 17 in a row at intervals in the front-rear direction and the left-right direction. In addition, as shown in FIG. 8G, a transparent sheet 18 provided with a transparent layer 4 is prepared.

Then, as shown in FIG. 8H, the plurality of phosphor layers 3 covering the plurality of LEDs 2 are covered by the transparent layer 4. Specifically, the transparent layer 4 is press-bonded to the phosphor layer 3 and the second support plate 17 by a flat plate press equipped with a lower mold and a lower mold.

Then, as shown in FIG. 8I, the second peeling sheet 19 is peeled from the transparent layer 4. Then, as shown in FIG. 8J, the sealed LED assembly 8 is cut off so that a plurality of LEDs 2 are singulated. Then, as shown by the arrow in FIG. 8J and FIG. 8K, the plurality of phosphor-layer-sealed LEDs are peeled off from the support plate 7 to obtain the phosphor-layer-sealed LED1. Thereafter, as shown in FIG. 8L, the phosphor layer-sealed LED1 is mounted on the substrate 50 to obtain an LED device 60.

In the second embodiment, as shown in FIG. 8G, a transparent sheet 18 with a transparent layer 4 is first prepared, and then a plurality of phosphor layers 3 covering a plurality of LEDs 2 are covered by a sheet-shaped transparent layer 4 , But for example, referring to FIG. 8I, the transparent resin composition (varnish, powder, lozenge, etc. prepared therefrom) can be directly applied to the second LED2 by means of pouring, transfer molding, compression molding, etc. The transparent layer 4 is formed into a sheet on the support plate 17.

>The third embodiment>

In the third embodiment, the same reference numerals are given to the same members and steps as in the above-mentioned first embodiment, and detailed descriptions thereof are omitted.

[LED sealed with phosphor layer]

As shown in FIG. 11, the phosphor layer 3 has a flange portion 36 at its peripheral end.

The flange portion 36 is a protruding portion that protrudes outward from the portion of the side surface 23 that covers the LED2. The upper surface of the flange portion 36 of the phosphor layer 3 is located in the phosphor layer 3 at a position further lowered from the portion covering the upper surface 22 of the LED2. Therefore, the upper surface of the flange portion 36 and the upper surface of the above portion There is a step difference between 31. The outer peripheral surface 37 of the flange portion 36 is exposed outward from the side surface 43 of the transparent layer 4. The outer peripheral surface 37 of the flange portion 36 and the side surface 43 of the transparent layer 4 are formed on the same surface in the vertical direction.

The upper surface 39 of the flange portion 36 is in contact with the lower surface 41 of the side portion 45 of the transparent layer 4.

[Manufacturing method of phosphor-sealed LED and manufacturing method of LED device]

Next, referring to FIGS. 12A to 13I, the method of manufacturing the phosphor layer sealed LED shown in FIG. 11 and the method of manufacturing the LED device using the phosphor layer sealed LED will be described.

The method for manufacturing the phosphor layer-sealed LED1 includes the following steps: a step of manufacturing a fluorescent sealing sheet 15 (refer to FIG. 12A), and a step of arranging the fluorescent sealing sheet 15 in such a way that the phosphor layer 3 covers a plurality of LEDs 2 (Refer to FIG. 12B), the step of forming recesses 24 in the phosphor layer 3 between adjacent LEDs 2 (refer to FIG. 12C), the step of manufacturing the transparent sheet 18 with the transparent layer 4 (refer to FIG. 12D), in the phosphor layer 3 the step of arranging the transparent sheet 18 (refer to FIG. 13E), and the step of cutting the phosphor layer 3 and the transparent layer 4 located at a distance from the LED2 to separate the LED1 whose phosphor layer is sealed (refer to FIG. 13F).

As shown by the arrow of FIG. 12B, after arranging the fluorescent sealing sheet 15 on the support plate 7, the peeling sheet 6 is peeled.

The upper surface of the phosphor layer 3 has a flat surface.

As shown in FIG. 12C, when the recess 24 is formed in the phosphor layer 3, the phosphor layer 3 located far away from the LED 2 is removed.

Specifically, the upper end of the phosphor layer 3 located far away from the LED 2 is half-cut by the wafer dicing saw 9.

By forming the recessed portion 24, the flange portion 36 is formed on the phosphor layer 3.

Thereafter, as shown in FIG. 13E, the transparent layer 4 of the transparent sheet 18 is arranged on the phosphor layer 3. The transparent layer 4 preferably includes a transparent resin composition containing a methyl-based polysiloxane resin composition from the viewpoint of obtaining excellent gas permeability.

Then, as shown in FIG. 13F, the phosphor layer 3 and the transparent layer 4 located far away from the LED 2 are cut off.

As a result, as shown in FIG. 13G, a plurality of phosphor layer-sealed LEDs 1 are obtained in a state supported by the second support plate 7.

After that, as shown in FIG. 13H, the plurality of phosphor layer-sealed LEDs 1 are transferred to the transfer sheet 25.

Thereafter, as shown in FIG. 13I, the LED1 sealed in the phosphor layer is transferred from the transfer sheet 25 to the substrate 50, and the LED1 sealed in the phosphor layer is mounted on the substrate 50. In this way, the LED device 60 is obtained.

[Effects of the third embodiment]

In the phosphor layer-sealed LED1, as shown in FIG. 11, the inner peripheral surface 38 of the receiving portion 30 covers the side surface 23 of the LED2 and the outer peripheral surface 37 of the flange portion 36 of the phosphor layer 3 is exposed to the outside. Therefore, the light emitted from the LED2 to the outside is sufficiently wavelength-converted by the flange portion 36 of the phosphor layer 3. On the other hand, the light emitted from the LED2 upwards is wavelength-converted by the phosphor layer 3. The light converted and transmitted through the phosphor layer 3 can be appropriately mixed in the transparent layer 4. As a result, the LED1 sealed in the phosphor layer has excellent light distribution (suppression of color unevenness).

In addition, the methyl silicone resin composition contained in the transparent layer 4 has a higher pressure-sensitive adhesive force (adhesion) than the phenyl silicone resin composition. Therefore, in the method shown in FIGS. 7A to 8K of the second embodiment, in the step of FIG. 8H, if the plurality of LEDs 2 exposed on the upper surface of the second support plate 17 are covered by the transparent layer 4, it will be transparent The layer 4 is pressure-sensitively bonded (adhered) to the upper surface of the second support plate 17 with a relatively high pressure-sensitive adhesive force (adhesive force). Therefore, there are cases where the subsequent transfer to the transfer sheet 25 (see FIGS. 13G and 13H) cannot be smoothly performed (that is, the transparent layer 4 does not peel off from the upper surface of the second support plate 17).

However, in the method shown in FIGS. 12A to 13I of the third embodiment, the transparent layer does not contact (pressure-sensitive adhesive) the upper surface of the support plate 7, so it can prevent the transparent layer 4 from pressure-sensitive adhesive (adhesion) to the support plate 7.

Furthermore, this method does not need to include the step of rearranging the LED1 sealed in the phosphor layer on the second support plate 17 as shown in FIG. 8G as in the second embodiment. Therefore, the number of manufacturing steps can be reduced, thereby reducing manufacturing costs.

[Change example]

The variation of the manufacturing method of the LED1 sealed with the phosphor layer does not include the step of removing the phosphor layer 3 located at a long distance from the LED2 shown in FIG. 7D, and the step of relocating the LED1 sealed with the phosphor layer shown in FIG. 2 The steps of the support plate 17 are the same as the manufacturing method of the second embodiment except for this.

In addition, this modified example does not include the step of forming the recessed portion 24 of the third embodiment (see FIG. 12C), and other than that is the same as the manufacturing method of the third embodiment.

That is, in this method, first, as shown in FIG. 14A, a plurality of LEDs 2 are prepared on the support plate 7. Furthermore, the fluorescent sealing sheet 15 provided with the peeling sheet 6 and the phosphor layer 3 is prepared.

Then, as shown in FIG. 14B, a plurality of LEDs 2 are sealed by the phosphor layer 3 of the phosphor sealing sheet 15. Specifically, the phosphor layer 3 is press-bonded to the plurality of LEDs 2 and the support plate 7 by a flat plate press equipped with a lower mold and a lower mold.

Thereby, the recessed portion 24 is formed in the phosphor layer 3. Therefore, the flange portion 36 is formed on the phosphor layer 3.

Next, as shown in FIG. 14C, the peeling sheet 6 is peeled from the phosphor layer 3.

Next, as shown in FIG. 14D, the transparent sheet 18 provided with the transparent layer 4 and the 2nd peeling sheet 19 is prepared.

Next, as shown in FIG. 15E, the transparent layer 4 of the transparent sheet 18 is arranged on the upper surface of the phosphor layer 3, and then the second release sheet 19 is peeled from the transparent layer 4. In this way, a sealed LED assembly 8 is obtained.

Thereafter, as shown in FIG. 15F, the sealed LED assembly 8 is cut, and singulated into LED 1 sealed with a phosphor layer.

Thereby, as shown in FIG. 15G, an LED1 sealed with a phosphor layer is obtained.

Thereafter, after screening the LED1 sealed in the phosphor layer, as shown in FIG. 15H, the screened LED1 sealed in the phosphor layer is mounted on the substrate 50 to obtain an LED device 60.

In addition, in this modified example, the same effects as those of the third embodiment described above are exhibited. In addition, compared with the method of manufacturing the phosphor layer sealed LED1 in the second embodiment, the method shown in FIGS. 14A to 15G does not need to include the removal of the phosphor layer 3 located far away from the LED2 as shown in FIG. 7D Step and the step of relocating the LED1 sealed in the phosphor layer on the second support plate 17 shown in FIG. 8G. Therefore, the number of manufacturing steps can be reduced, thereby reducing manufacturing costs.

[Example]

The specific values of the blending ratio (content ratio), physical property values, and parameters used in the following descriptions can be replaced with the blending ratios (content ratio), physical property values, parameters, etc. corresponding to them described in the above-mentioned "embodiment". Upper limit value (defined as "below" or "not reached" value) or lower limit value (defined as "above" or "over" value).

>Synthesis of polysiloxanes containing alkenyl groups and polysiloxanes containing hydrogen silyl groups>

Synthesis example 1

Put 93.2g of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 140g of water, and three-necked flask equipped with a stirrer, reflux cooling tube, input port and thermometer. 0.38g of fluoromethanesulfonic acid and 500g of toluene were mixed, and while stirring, a mixture of 729.2g of methylphenyldimethoxysilane and 330.5g of phenyltrimethoxysilane was added dropwise over 1 hour, and then heated to reflux for 1 hour . After cooling, the lower layer (aqueous layer) was separated and removed, and the upper layer (toluene solution) was washed with water three times. 0.40 g of potassium hydroxide was added to the toluene solution after washing, and reflux was performed while removing water from the water separation tube. After the removal of water, it was refluxed for 5 hours and allowed to cool. Then, after adding 0.6 g of acetic acid to neutralize, filtering was performed to obtain a toluene solution, and the obtained toluene solution was washed with water three times. Then, it is concentrated under reduced pressure, thereby obtaining a liquid polysiloxane A containing alkenyl groups. The average unit formula and average composition formula of alkenyl-containing polysiloxane A are as follows.

Average unit formula: ((CH ₂ =CH)(CH ₃ ) ₂ SiO _1/2 ) _0.15 (CH ₃ C ₆ H ₅ SiO _2/2 ) _0.60 (C ₆ H ₅ SiO _3/2 ) _0.25

Average composition formula: (CH ₂ =CH) _0.15 (CH ₃ ) _0.90 (C ₆ H ₅ ) _0.85 SiO _1.05

That is, the alkenyl group-containing polysiloxane A is represented by the above average composition formula (1) in which R ¹ is a vinyl group, R ² is a methyl group and a phenyl group, a=0.15, and b=1.75.

In addition, the weight average molecular weight of polystyrene conversion of alkenyl group-containing polysiloxane A was measured by gel permeation chromatography, and the result was 2,300.

Synthesis Example 2

Put 93.2g of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 140g of water, and three-necked flask equipped with a stirrer, reflux cooling tube, input port and thermometer. 0.38g of fluoromethanesulfonic acid and 500g of toluene were mixed, and while stirring, a mixture of 173.4g of diphenyldimethoxysilane and 300.6g of phenyltrimethoxysilane was added dropwise over 1 hour. After the addition, the mixture was heated to reflux 1 hour. After cooling, the lower layer (aqueous layer) was separated and removed, and the upper layer (toluene solution) was washed with water three times. 0.40 g of potassium hydroxide was added to the toluene solution after washing, and reflux was performed while removing water from the water separation tube. After the removal of water, reflux for 5 hours to cool. After adding 0.6 g of acetic acid to neutralize, filtering was performed to obtain a toluene solution, and the obtained toluene solution was washed with water three times. Then, it is concentrated under reduced pressure, thereby obtaining a liquid polysiloxane B containing alkenyl groups. The average unit formula and average composition formula of alkenyl group-containing polysiloxane B are as follows.

Average unit formula: (CH ₂ =CH(CH ₃ ) ₂ SiO _1/2 ) _0.31 ((C ₆ H ₅ ) ₂ SiO _2/2 ) _0.22 (C ₆ H ₅ SiO _3/2 ) _0.47

Average composition formula: (CH ₂ =CH) _0.31 (CH ₃ ) _0.62 (C ₆ H ₅ ) _0.91 SiO _1.08

That is, the alkenyl group-containing polysiloxane B is represented by the above average composition formula (1) in which R ¹ is a vinyl group, R ² is a methyl group and a phenyl group, and a=0.31 and b=1.53.

In addition, the weight average molecular weight of polystyrene conversion of alkenyl group-containing polysiloxane B was measured by gel permeation chromatography, and the result was 1,000.

Synthesis Example 3

Into a four-necked flask equipped with a stirrer, a reflux cooling tube, an input port and a thermometer, put 325.9g of diphenyldimethoxysilane, 564.9g of phenyltrimethoxysilane, and 2.36g of trifluoromethanesulfonic acid. Mix, 134.3g of 1,1,3,3-tetramethyldisiloxane, and add 432g of acetic acid dropwise over 30 minutes while stirring. After the dropping was completed, the mixture was heated to 50°C while stirring, and reacted for 3 hours. After cooling to room temperature, toluene and water were added, mixed well, and then left to stand, and the lower layer (aqueous layer) was separated and removed. Thereafter, the upper layer (toluene solution) was washed three times with water and then concentrated under reduced pressure, thereby obtaining polysiloxane C (crosslinking agent C) containing a hydrogen silyl group.

The average unit formula and average composition formula of polysiloxane C containing hydrogen silyl groups are as follows.

Average unit formula: (H(CH ₃ ) ₂ SiO _1/2 ) _0.33 ((C ₆ H ₅ ) ₂ SiO _2/2 ) _0.22 (C ₆ H ₅ PhSiO _3/2 ) _0.45

Average composition formula: H _0.33 (CH ₃ ) _0.66 (C ₆ H ₅ ) _0.89 SiO _1.06

That is, the polysiloxane C containing a hydrogen silyl group is represented by the above average composition formula (2) in which R3 is a methyl group and a phenyl group, c=0.33, and d=1.55.

In addition, the weight average molecular weight of polystyrene-converted polysiloxane C containing hydrogen silyl group was measured by gel permeation chromatography, and the result was 1,000.

>Other raw materials>

The raw materials other than polysiloxane containing alkenyl groups and polysiloxane containing hydrogen silyl groups will be described in detail below.

LR7665: Trade name, methyl silicone resin composition, refractive index 1.41, manufactured by Wacker Asahikasei Silicone

Inorganic filler A: refractive index 1.55, composition and composition ratio (mass%): SiO ₂ /Al ₂ O ₃ /CaO/MgO=60/20/15/5 inorganic filler, and average particle size: 15μm (by classification And adjust the average particle size)

TOSPEARL TS2000B: Silicone-based resin particles with an average particle size of 6.0μm, manufactured by Japan Momentive Performance Materials

>Preparation of polysiloxane resin composition>

Preparation Example 1

20 g of polysiloxane A (synthesis example 1) containing alkenyl groups, 25 g of polysiloxane B (synthesis example 2) containing alkenyl groups, and polysiloxane C containing hydrogen silyl groups (synthesis example 3, cross-linking Agent C) 25 g and 5 mg of platinum carbonyl complex were mixed to prepare silicone resin composition A.

Preparation Example 2

The silicone resin composition of Example 1 described in JP 2010-265436 A was prepared as a silicone resin composition B (condensation-addition reaction curing type silicone resin composition).

>Manufacture of LED sealed with phosphor layer>

Example 1

The silicone resin composition A was mixed with the inorganic filler A so as to be 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index RIt of the transparent resin composition X was 1.56.

YAG468 (fluorescent material, manufactured by Nemoto Special Chemical Co., Ltd.) was blended to the transparent resin composition X so as to be 20% by mass relative to the total amount thereof, and these were mixed to prepare a phosphor resin composition.

After that, use an applicator to coat the transparent resin composition X on the surface of a peeling sheet (PTE sheet, trade name "SS4C", manufactured by Nippa) with a thickness of 50 μm so that the thickness after heating becomes 650 μm, and then Heat at 90°C for 20 minutes to produce a B-stage transparent layer.

Then, use an applicator to coat the phosphor resin composition on the surface (upper surface) of the transparent layer so that the thickness after heating becomes 350μm, and then heat it at 80°C for 11 minutes to produce a B-stage phosphor Light body layer.

In this way, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (refer to FIG. 2A).

After that, a double-sided tape (pressure sensitive adhesive layer) was attached to the stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14mm×1.14mm×150μm, manufactured by Epistar) were arranged at a pitch of 1.44mm on it. (Refer to Figure 2B). After that, using a vacuum flat press heated to 90° C., the sealing sheet was thermocompression bonded to a plurality of LEDs for 10 minutes (refer to FIG. 2C). Specifically, a plurality of LEDs are thermocompression bonded to the sealing sheet so that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer and the transparent layer are temporarily plasticized by the thermal compression bonding. In this way, the plurality of LEDs are sealed by the sealing sheet.

Thereafter, post-curing treatment was performed at 150°C for 2 hours. In this way, the phosphor layer and the transparent layer are C-staged. After that, the sealing sheet was cut into individual pieces to manufacture an LED equipped with one LED, a phosphor layer, and a transparent layer of a phosphor layer sealed LED on a stainless steel plate (see Fig. 2C).

Then, the peeling sheet is peeled from the transparent layer (refer to the imaginary line in FIG. 2C). Then, the sealed LED assembly is cut to separate a plurality of LEDs (see FIG. 2D).

Thereafter, the LED sealed in the phosphor layer was peeled off from the double-sided tape (refer to the arrow in FIG. 2D and FIG. 2E).

Thus, an LED sealed with a phosphor layer is obtained (refer to FIG. 2E).

Example 2

The silicone resin composition A was mixed with the inorganic filler A so as to be 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index RIt of the transparent resin composition X was 1.56.

In addition, YAG468 (fluorescent material, manufactured by Nemoto Special Chemical Co., Ltd.) was blended to the transparent resin composition X so as to be 12% by mass relative to the total amount thereof, and these were mixed to prepare a phosphor resin composition Things.

After that, use an applicator to coat the transparent resin composition X on the surface of a release sheet (PTE sheet, trade name "SS4C", manufactured by Nippa) with a thickness of 50 μm so that the thickness after heating becomes 500 μm, and then Heat at 90°C for 20 minutes to produce a B-stage transparent layer.

Using an applicator, the phosphor resin composition was coated on it so that the thickness after heating became 500 μm, and then heated at 80° C. for 11 minutes to form a B-stage phosphor layer.

In this way, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (refer to FIG. 2A).

After that, a double-sided tape (pressure sensitive adhesive layer) was attached to the stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14mm×1.14mm×150μm, manufactured by Epistar) were arranged at a pitch of 1.64mm on it. (Refer to Figure 2B). Thereafter, using a vacuum plate press heated to 90°C, the sealing sheet was thermocompression-bonded to a plurality of LEDs for 10 minutes (refer to FIG. 2C). Specifically, a plurality of LEDs are thermocompression bonded to the sealing sheet so that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer and the transparent layer are temporarily plasticized by the thermal compression bonding. In this way, the plurality of LEDs are sealed by the sealing sheet.

Thereafter, post-curing treatment was performed at 150°C for 2 hours. In this way, the phosphor layer and the transparent layer are C-staged. After that, the sealing sheet was cut into individual pieces to manufacture an LED equipped with one LED, a phosphor layer, and a transparent layer with a phosphor layer sealed on a stainless steel plate (see FIG. 2C).

Then, the peeling sheet is peeled from the transparent layer (refer to the imaginary line in FIG. 2C). Then, the sealed LED assembly is cut to separate a plurality of LEDs (see FIG. 2D).

Thereafter, the LED sealed in the phosphor layer was peeled off from the double-sided tape (refer to the arrow in FIG. 2D and FIG. 2E).

Thus, an LED sealed with a phosphor layer is obtained (refer to FIG. 2E).

Example 3

The silicone resin composition A was mixed with the inorganic filler A so as to be 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index RIt of the transparent resin composition X was 1.56.

YAG468 (fluorescent material, manufactured by Nemoto Special Chemical Co., Ltd.) was blended to the transparent resin composition X so as to be 10% by mass relative to the total amount thereof, and these were mixed to prepare a phosphor resin composition.

After that, use an applicator to coat the transparent resin composition X on the surface of a peeling sheet (PTE sheet, trade name "SS4C", manufactured by Nippa) with a thickness of 50 μm so that the thickness after heating becomes 400 μm, and then Heat at 90°C for 20 minutes to produce a B-stage transparent layer.

Then, use an applicator to coat the phosphor resin composition on the surface (upper surface) of the transparent layer so that the thickness after heating becomes 600μm, and then heat it at 80°C for 11 minutes to produce a B-stage fluorescent Light body layer.

In this way, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (refer to FIG. 2A).

After that, a double-sided tape (pressure sensitive adhesive layer) was attached to the stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14mm×1.14mm×150μm, manufactured by Epistar) were arranged at a pitch of 1.84mm on it. (Refer to Figure 2B). After that, using a vacuum flat press heated to 90° C., the sealing sheet was thermocompression bonded to a plurality of LEDs for 10 minutes (refer to FIG. 2C). Specifically, a plurality of LEDs are thermocompression bonded to the sealing sheet so that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer and the transparent layer are temporarily plasticized by the thermal compression bonding. In this way, the plurality of LEDs are sealed by the sealing sheet.

Thereafter, post-curing treatment was performed at 150°C for 2 hours. In this way, the phosphor layer and the transparent layer are C-staged. After that, the sealing sheet was cut into individual pieces to manufacture an LED equipped with one LED, a phosphor layer, and a transparent layer with a phosphor layer sealed on a stainless steel plate (see FIG. 2C).

Then, the peeling sheet is peeled from the transparent layer (refer to the imaginary line in FIG. 2C). Then, the sealed LED assembly is cut to separate a plurality of LEDs (see FIG. 2D).

Thereafter, the LED sealed in the phosphor layer was peeled off from the double-sided tape (refer to the arrow in FIG. 2D and FIG. 2E).

Thus, an LED sealed with a phosphor layer is obtained (refer to FIG. 2E).

Example 4

The silicone resin composition A was mixed with the inorganic filler A so as to be 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index RIt of the transparent resin composition X was 1.56.

YAG468 (fluorescent material, manufactured by Nemoto Special Chemical Co., Ltd.) was blended to the transparent resin composition X so as to be 10% by mass relative to the total amount thereof, and these were mixed to prepare a phosphor resin composition.

After that, use an applicator to coat the transparent resin composition X on the surface of a peeling sheet (PTE sheet, trade name "SS4C", manufactured by Nippa) with a thickness of 50 μm so that the thickness after heating becomes 900 μm, and then Heat at 90°C for 20 minutes to produce a B-stage transparent layer.

Then, use an applicator to coat the phosphor resin composition on the surface (upper surface) of the transparent layer so that the heated thickness becomes 600μm, and then heat it at 80°C for 11 minutes to produce a B-stage fluorescent Light body layer.

In this way, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (refer to FIG. 2A).

After that, a double-sided tape (pressure sensitive adhesive layer) was attached to the stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14mm×1.14mm×150μm, manufactured by Epistar) were arranged at a pitch of 1.84mm on it. (Refer to Figure 2B). After that, using a vacuum flat press heated to 90° C., the sealing sheet was thermocompression bonded to a plurality of LEDs for 10 minutes (refer to FIG. 2C). Specifically, a plurality of LEDs are thermocompression bonded to the sealing sheet so that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer and the transparent layer are temporarily plasticized by the thermal compression bonding. In this way, the plurality of LEDs are sealed by the sealing sheet.

Thereafter, post-curing treatment was performed at 150°C for 2 hours. In this way, the phosphor layer and the transparent layer are C-staged. After that, the sealing sheet was cut into individual pieces to manufacture an LED equipped with one LED, a phosphor layer, and a transparent layer with a phosphor layer sealed on a stainless steel plate (see FIG. 2C).

Then, the peeling sheet is peeled from the transparent layer (refer to the imaginary line in FIG. 2C). Then, the sealed LED assembly is cut to separate a plurality of LEDs (see FIG. 2D).

Thereafter, the LED sealed in the phosphor layer was peeled off from the double-sided tape (refer to the arrow in FIG. 2D and FIG. 2E).

Thus, an LED sealed with a phosphor layer is obtained (refer to FIG. 2E).

Example 5

The silicone resin composition A was mixed with the inorganic filler A so as to be 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index RIt of the transparent resin composition X was 1.56.

In addition, YAG468 (fluorescent material, manufactured by Nemoto Special Chemical Co., Ltd.) was blended to the transparent resin composition X so as to be 11% by mass relative to the total amount, and these were mixed to prepare a phosphor resin combination Things.

After that, use an applicator to coat the transparent resin composition X on the surface of a release sheet (PTE sheet, trade name "SS4C", manufactured by Nippa) with a thickness of 50 μm so that the thickness after heating becomes 500 μm, and then Heat at 90°C for 20 minutes to produce a B-stage transparent layer.

Then, use an applicator to coat the phosphor resin composition on the surface (upper surface) of the transparent layer so that the thickness after heating becomes 500μm, and then heat it at 80°C for 11 minutes to produce a B-stage phosphor Light body layer.

In this way, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (refer to FIG. 2A).

After that, a double-sided tape (pressure sensitive adhesive layer) was attached to the stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14mm×1.14mm×150μm, manufactured by Epistar) were arranged at a pitch of 1.84mm on it. (Refer to Figure 2B). After that, using a vacuum flat press heated to 90° C., the sealing sheet was thermocompression bonded to a plurality of LEDs for 10 minutes (refer to FIG. 2C). Specifically, a plurality of LEDs are thermocompression bonded to the sealing sheet so that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer and the transparent layer are temporarily plasticized by the thermal compression bonding. In this way, the plurality of LEDs are sealed by the sealing sheet.

Thereafter, post-curing treatment was performed at 150°C for 2 hours. In this way, the phosphor layer and the transparent layer are C-staged. After that, the sealing sheet was cut into individual pieces to manufacture an LED equipped with one LED, a phosphor layer, and a transparent layer with a phosphor layer sealed on a stainless steel plate (see FIG. 2C).

Then, the peeling sheet is peeled from the transparent layer (refer to the imaginary line in FIG. 2C). Then, the sealed LED assembly is cut to separate a plurality of LEDs (see FIG. 2D).

Thereafter, the LED sealed in the phosphor layer was peeled off from the double-sided tape (refer to the arrow in FIG. 2D and FIG. 2E).

Thus, an LED sealed with a phosphor layer is obtained (refer to FIG. 2E).

Example 6

The silicone resin composition A was mixed with the inorganic filler A so as to be 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index RIt of the transparent resin composition X was 1.56.

YAG468 (fluorescent material, manufactured by Nemoto Special Chemical Co., Ltd.) was blended to the transparent resin composition X so that it would become 13% by mass relative to the total amount thereof, and these were mixed to prepare a phosphor resin composition.

After that, use an applicator to coat the transparent resin composition X on the surface of a release sheet (PTE sheet, trade name "SS4C", manufactured by Nippa) with a thickness of 50 μm so that the thickness after heating becomes 500 μm, and then Heat at 90°C for 20 minutes to produce a B-stage transparent layer.

Then, use an applicator to coat the phosphor resin composition on the surface (upper surface) of the transparent layer so that the thickness after heating becomes 500μm, and then heat it at 80°C for 11 minutes to produce a B-stage phosphor Light body layer.

In this way, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (refer to FIG. 2A).

After that, a double-sided tape (pressure sensitive adhesive layer) was attached to the stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14mm×1.14mm×150μm, manufactured by Epistar) were arranged at a pitch of 1.44mm on it. (Refer to Figure 2B). After that, using a vacuum flat press heated to 90° C., the sealing sheet was thermocompression bonded to a plurality of LEDs for 10 minutes (refer to FIG. 2C). Specifically, a plurality of LEDs are thermocompression bonded to the sealing sheet in such a way that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer and the transparent layer are temporarily plasticized by the thermal compression bonding. In this way, the plurality of LEDs are sealed by the sealing sheet.

After that, a post-curing treatment (C-staged) was performed at 150°C for 2 hours, and then the sealing sheet was cut into individual pieces to manufacture a single LED, phosphor layer, and The transparent layer of the phosphor layer sealed LED (refer to Figure 2C).

Then, the peeling sheet is peeled from the transparent layer (refer to the imaginary line in FIG. 2C). Then, the sealed LED assembly is cut to separate a plurality of LEDs (see FIG. 2D).

Thereafter, the LED sealed in the phosphor layer was peeled off from the double-sided tape (refer to the arrow in FIG. 2D and FIG. 2E).

Thus, an LED sealed with a phosphor layer is obtained (refer to FIG. 2E).

Example 7

To the silicone resin composition B, TOSPEARL TS2000B was mixed so as to be 30% by mass relative to the total amount thereof, and a transparent resin composition Y was prepared in the form of a varnish.

In addition, YAG468 (fluorescent material, manufactured by Nemoto Special Chemical Co., Ltd.) was blended to the transparent resin composition Y so as to be 18% by mass relative to the total amount thereof, and these were mixed to prepare a phosphor resin composition Things.

Then, use an applicator to coat the phosphor resin composition on a 500μm glass plate (refractive index RIt: 1.52) as a transparent layer so that the thickness after heating becomes 500μm, and then heat it at 135°C for 15 Minutes to prepare a B-stage phosphor layer on the glass plate. Thereby, a sealing sheet provided with a glass plate and a phosphor layer was prepared (refer to FIG. 2A).

After that, a double-sided tape (pressure sensitive adhesive layer) was attached to the stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14mm×1.14mm×150μm, manufactured by Epistar) were arranged at a pitch of 1.64mm on it. (Refer to Figure 2B). Thereafter, using a vacuum plate press at room temperature, the sealing sheet was crimped to a plurality of LEDs for 10 minutes. Specifically, a plurality of LEDs are pressure-bonded to the sealing sheet so that the phosphor layer contacts the LED and the double-sided tape around it. In this way, the plurality of LEDs are sealed by the sealing sheet.

After that, it was heated at 150°C for 2 hours to thermally harden the phosphor layer (C-staged). After that, the sealing sheet was cut into pieces to produce a stainless steel plate equipped with one LED and phosphor LED with bulk layer and phosphor layer of glass plate sealed (refer to Figure 2C).

Then, the sealed LED assembly is cut to separate a plurality of LEDs (see FIG. 2D).

Thereafter, the LED sealed in the phosphor layer was peeled off from the double-sided tape (refer to the arrow in FIG. 2D and FIG. 2E).

Thus, an LED sealed with a phosphor layer is obtained (refer to FIG. 2E).

Example 8

The silicone resin composition A was mixed with the inorganic filler A so as to be 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index RIt of the transparent resin composition X was 1.56.

YAG468 (fluorescent material, manufactured by Nemoto Special Chemical Co., Ltd.) was blended to the transparent resin composition X so that it would become 12% by mass relative to the total amount thereof, and these were mixed to prepare a phosphor resin composition.

Then, TOSPEARL TS2000B was mixed with LR7665 so that the total amount was 30% by mass to obtain a varnish (refractive index RIt: 1.41). Using an applicator, a peeling sheet (PTE sheet, trade name " "SS4C", manufactured by Nippa Corporation) is coated with the varnish obtained so that the thickness after heating becomes 500μm, and then heated at 100°C for 10 minutes to produce a C-stage transparent layer.

Then, use an applicator to coat the phosphor resin composition on the surface (upper surface) of the transparent layer so that the thickness after heating becomes 500μm, and then heat it at 80°C for 11 minutes to produce a B-stage phosphor Light body layer.

In this way, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (refer to FIG. 2A).

After that, a double-sided tape (pressure sensitive adhesive layer) was attached to the stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14mm×1.14mm×150μm, manufactured by Epistar) were arranged at a pitch of 1.64mm on it. (Refer to Figure 2B). After that, using a vacuum flat press heated to 90° C., the sealing sheet was thermocompression bonded to a plurality of LEDs for 10 minutes (refer to FIG. 2C). Specifically, a plurality of LEDs are thermocompression bonded to the sealing sheet so that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer is temporarily plasticized by the thermal compression bonding. In this way, the plurality of LEDs are sealed by the sealing sheet.

Thereafter, post-curing treatment was performed at 150°C for 2 hours. In this way, the phosphor layer is C-staged. After that, the sealing sheet was cut into individual pieces to manufacture an LED equipped with one LED, a phosphor layer, and a transparent layer with a phosphor layer sealed on a stainless steel plate (see FIG. 2C).

Then, the peeling sheet is peeled from the transparent layer (refer to the imaginary line in FIG. 2C). Then, the sealed LED assembly is cut to separate a plurality of LEDs (see FIG. 2D).

Thereafter, the LED sealed in the phosphor layer was peeled off from the double-sided tape (refer to the arrow in FIG. 2D and FIG. 2E).

Thus, an LED sealed with a phosphor layer is obtained (refer to FIG. 2E).

Example 9

YAG468 (manufactured by Nemoto Special Chemical Co., Ltd.) was mixed with 100 parts by mass of the silicone resin composition A to be 17% by mass relative to the total amount thereof, and the phosphor resin composition was prepared as a varnish.

A double-sided tape was attached to the stainless steel plate, and one LED (EDI-FA4545A, size: 1.14mm×1.14mm×150μm, manufactured by Epistar) was mounted (arranged) on the stainless steel plate (refer to Figure 3A).

In addition, the first barrier rib and the second barrier rib were fabricated (see FIGS. 3A and 3D).

That is, LR7665 (refractive index 1.41) is coated with a thickness of 500μm, cured (thermally cured) at 100°C for 10 minutes, and then the cured sheet is processed into an outer frame size of 10mm×10mm and an inner frame size (inner size) of 1.64mm ×1.64mm rectangular frame shape, fabricated the first barrier (refer to Figure 3A). That is, the outer dimension of the first barrier rib is 10 mm×10 mm, and the inner dimension of the rectangular opening is 1.64 mm×1.64 mm.

Next, except for changing the thickness to 1 mm, the second barrier rib was produced in the same manner as the first barrier rib (see FIG. 3D).

Then, on the stainless steel plate, a first barrier is installed around the LED (refer to FIG. 3B). Then, the varnish of the phosphor resin composition was dropped into the first opening of the first barrier, the amount was adjusted so that the liquid thickness became 500 μm, and the phosphor resin composition was B-staged at 100°C for 10 minutes ( Refer to Figure 3C). In this way, the phosphor layer in the B-stage state is obtained. Thereafter, the first barrier rib is removed (refer to the arrow in FIG. 3C).

Furthermore, on the stainless steel plate, a second barrier is provided around the phosphor layer (refer to FIG. 3E). After that, the silicone resin composition A was dropped into the second opening of the second barrier rib to adjust the liquid volume so that the total thickness became 1 mm. Then, the silicone resin composition A was thermally cured (C-staged) at 150°C for 2 hours to obtain a transparent layer in a C-stage state (see FIG. 4F). Then, cutting is performed along the boundary (interface) between the phosphor layer and the transparent layer (refer to FIG. 4G) to prepare an LED sealed in the phosphor layer (refer to FIG. 4H).

Example 10

YAG468 (manufactured by Nemoto Special Chemical Co., Ltd.) was mixed with the silicone resin composition A so as to become 18% by mass relative to the total amount thereof, and the phosphor resin composition was prepared as a varnish.

A double-sided tape is attached to the stainless steel plate, and one LED (EDI-FA4545A, size: 1.41mm×1.41mm×150μm, manufactured by Epistar) is mounted (arranged) on it (see Fig. 3A).

In addition, the first barrier rib and the second barrier rib were fabricated (see FIGS. 3A and 3D).

That is, LR7665 (refractive index: 1.41) is coated with a thickness of 500μm, and cured (thermal curing) at 100°C for 10 minutes, and then the cured sheet is processed into an outer frame size of 10mm×10mm and an inner frame size (internal size) A 1.64mm×1.64mm rectangular frame shape was used to fabricate the first barrier rib (see Fig. 3A). That is, the outer dimension of the first barrier rib is 10 mm×10 mm, and the inner dimension of the rectangular opening is 1.64 mm×1.64 mm.

Next, except for changing the thickness to 1 mm, the second barrier rib was produced in the same manner as the first barrier rib (see FIG. 3D).

Then, on the stainless steel plate, a first barrier is installed around the LED (refer to FIG. 3B). Then, the varnish of the phosphor resin composition was dropped into the first opening of the first barrier, and the amount was adjusted so that the liquid thickness became 500 μm, and the phosphor resin composition was B-staged at 100°C for 10 minutes (Refer to Figure 3C). In this way, the phosphor layer in the B-stage state is obtained. Thereafter, the first barrier rib is removed (refer to the arrow in FIG. 3C).

Furthermore, on the stainless steel plate, a second barrier rib is provided around the phosphor layer (see FIG. 3E). After that, LR7665 (refractive index 1.41) was dropped into the second opening of the second barrier rib to adjust the liquid volume so that the total thickness became 1 mm. Then, the silicone resin composition A was thermally cured (C-staged) at 150°C for 2 hours to obtain a transparent layer in a C-stage state (see FIG. 4F). Then, cutting is performed along the boundary (interface) of the uniform transparent layer of the phosphor layer (refer to FIG. 4G) to prepare an LED sealed in the phosphor layer (refer to FIG. 4H).

Example 11

The silicone resin composition A was mixed with the inorganic filler A so as to be 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index of the transparent resin composition X was 1.56.

YAG468 (fluorescent material, manufactured by Nemoto Special Chemical Co., Ltd.) was blended to the transparent resin composition X so as to become 50% by mass relative to the total amount thereof, and these were mixed to prepare a phosphor resin composition.

After that, using an applicator, apply the transparent resin composition X to the surface of a peeling sheet (PTE sheet, trade name "SS4C", manufactured by Nippa) with a thickness of 50 μm so that the thickness after heating becomes 800 μm, and then Heat at 90°C for 20 minutes to produce a B-stage transparent layer.

Then, use an applicator to coat the phosphor resin composition on the surface (upper surface) of the transparent layer so that the heated thickness becomes 200μm, and then heat it at 80°C for 11 minutes to produce a B-stage fluorescent Light body layer.

In this way, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (refer to FIG. 2A).

After that, a double-sided tape (pressure sensitive adhesive layer) was attached to the stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14mm×1.14mm×150μm, manufactured by Epistar) were arranged at a pitch of 1.24mm on it ( Refer to Figure 2B). After that, using a vacuum flat press heated to 90° C., the sealing sheet was thermocompression bonded to a plurality of LEDs for 10 minutes (refer to FIG. 2C). Specifically, a plurality of LEDs are thermocompression bonded to the sealing sheet so that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer and the transparent layer are temporarily plasticized by the thermal compression bonding. In this way, the plurality of LEDs are sealed by the sealing sheet.

Thereafter, post-curing treatment was performed at 150°C for 2 hours. In this way, the phosphor layer and the transparent layer are C-staged. After that, the sealing sheet was cut into individual pieces to manufacture an LED equipped with one LED, a phosphor layer, and a transparent layer with a phosphor layer sealed on a stainless steel plate (see FIG. 2C).

Then, the peeling sheet is peeled from the transparent layer (refer to the imaginary line in FIG. 2C). Then, the sealed LED assembly is cut to separate a plurality of LEDs (see FIG. 2D).

Thereafter, the LED sealed in the phosphor layer was peeled off from the double-sided tape (refer to the arrow in FIG. 2D and FIG. 2E).

Thus, an LED sealed with a phosphor layer is obtained (refer to FIG. 2E).

Example 12

The silicone resin composition A was mixed with the inorganic filler A so as to be 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index of the transparent resin composition X was 1.56.

To the transparent resin composition X, YAG468 (fluorescent material, manufactured by Nemoto Special Chemical Co., Ltd.) was blended so as to be 30% by mass relative to the total amount thereof, and these were mixed to prepare a phosphor resin composition.

After that, using an applicator, apply transparent resin composition X to the surface of a peeling sheet (PTE sheet, trade name "SS4C", manufactured by Nippa) with a thickness of 50 μm so that the thickness after heating becomes 50 μm, and then Heat at 90°C for 20 minutes to produce a B-stage transparent layer.

Then, use an applicator to coat the phosphor resin composition on the surface (upper surface) of the transparent layer so that the thickness after heating becomes 300μm, and then heat it at 80°C for 11 minutes to produce a B-stage phosphor Light body layer.

In this way, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (refer to FIG. 2A).

After that, a double-sided tape (pressure sensitive adhesive layer) was attached to the stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14mm×1.14mm×150μm, manufactured by Epistar) were arranged at a pitch of 1.34mm on it (Refer to Figure 2B). After that, using a vacuum flat press heated to 90° C., the sealing sheet was thermocompression bonded to a plurality of LEDs for 10 minutes (refer to FIG. 2C). Specifically, a plurality of LEDs are thermocompression bonded to the sealing sheet so that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer and the transparent layer are temporarily plasticized by the thermal compression bonding. In this way, the plurality of LEDs are sealed by the sealing sheet.

Thereafter, post-curing treatment was performed at 150°C for 2 hours. In this way, the phosphor layer and the transparent layer are C-staged. After that, the sealing sheet was cut into individual pieces to manufacture an LED equipped with one LED, a phosphor layer, and a transparent layer with a phosphor layer sealed on a stainless steel plate (see FIG. 2C).

Then, the peeling sheet is peeled from the transparent layer (refer to the imaginary line in FIG. 2C). Then, the sealed LED assembly is cut to separate a plurality of LEDs (see FIG. 2D).

Thereafter, the LED sealed in the phosphor layer was peeled off from the double-sided tape (refer to the arrow in FIG. 2D and FIG. 2E).

Thus, an LED sealed with a phosphor layer is obtained (refer to FIG. 2E).

Example 13

The silicone resin composition A was mixed with the inorganic filler A so as to be 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index of the transparent resin composition X was 1.56.

YAG468 (fluorescent material, manufactured by Nemoto Special Chemical Co., Ltd.) was blended to the transparent resin composition X so as to be 8 parts by mass with respect to the total amount thereof, and these were mixed to prepare a phosphor resin composition.

After that, use an applicator to coat the transparent resin composition X on the surface of a peeling sheet (PTE sheet, trade name "SS4C", manufactured by Nippa) with a thickness of 50 μm so that the thickness after heating becomes 100 μm, and then Heat at 90°C for 20 minutes to produce a B-stage transparent layer.

Then, use an applicator to coat the phosphor resin composition on the surface (upper surface) of the transparent layer so that the thickness after heating becomes 900μm, and then heat it at 80°C for 11 minutes to produce a B-stage phosphor Light body layer.

In this way, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (refer to FIG. 2A).

After that, a double-sided tape (pressure sensitive adhesive layer) was attached to the stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14mm×1.14mm×150μm, manufactured by Epistar) were arranged at a pitch of 1.64mm on it. (Refer to Figure 2B). After that, using a vacuum flat press heated to 90° C., the sealing sheet was thermocompression bonded to a plurality of LEDs for 10 minutes (refer to FIG. 2C). Specifically, a plurality of LEDs are thermocompression bonded to the sealing sheet so that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer and the transparent layer are temporarily plasticized by the thermal compression bonding. In this way, the plurality of LEDs are sealed by the sealing sheet.

Thereafter, post-curing treatment was performed at 150°C for 2 hours. In this way, the phosphor layer and the transparent layer are C-staged. After that, the sealing sheet was cut into individual pieces to manufacture an LED equipped with one LED, a phosphor layer, and a transparent layer of a phosphor layer sealed LED on a stainless steel plate (see Fig. 2C).

Then, the peeling sheet is peeled from the transparent layer (refer to the imaginary line in FIG. 2C). Then, the sealed LED assembly is cut to separate a plurality of LEDs (see FIG. 2D).

Thereafter, the LED sealed in the phosphor layer was peeled off from the double-sided tape (refer to the arrow in FIG. 2D and FIG. 2E).

Thus, an LED sealed with a phosphor layer is obtained (refer to FIG. 2E).

Example 14

The silicone resin composition A was mixed with the inorganic filler A so as to be 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index of the transparent resin composition X was 1.56.

YAG468 (fluorescent material, manufactured by Nemoto Special Chemical Co., Ltd.) was blended to the transparent resin composition X so as to become 28% by mass relative to the total equivalent amount, and these were mixed to prepare a phosphor resin composition.

After that, using an applicator, the phosphor resin composition was applied to the surface of a peeling sheet (PTE sheet, trade name "SS4C", manufactured by Nippa Company) with a thickness of 50 μm so that the thickness after heating became 150 μm. Then, it was heated at 90° C. for 20 minutes to produce a B-stage phosphor layer. In this way, a fluorescent sealing sheet including a release sheet and a phosphor layer is produced (the phosphor layer preparation step, refer to FIG. 7A).

After that, a double-sided tape (pressure sensitive adhesive layer) was attached to the stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14mm×1.14mm×150μm, manufactured by Epistar) were arranged at a pitch of 1.54mm on it. . After that, using a vacuum flat press heated to 90° C., the sealing sheet was thermocompression bonded to a plurality of fluorescent LEDs for 10 minutes. Specifically, a vacuum plate press is used to thermally press and bond a plurality of LED fluorescent sealing sheets in such a way that the fluorescent layer contacts the LED and the double-sided tape around it (the phosphor layer placement step, refer to FIG. 7B). The upper surface of the phosphor layer is formed flat.

After that, the peeling sheet was peeled off from the phosphor layer (see FIG. 7C).

Then, the phosphor layer located far away from the LED is removed, and at the same time, the LED sealed in the phosphor layer is singulated (singulation/removal step, refer to FIG. 7D). That is, the transparent sheet is cut by a wafer dicing saw with a thickness of 200 μm.

In this way, an LED sealed with a phosphor layer is obtained (refer to FIG. 7F).

After that, the LEDs sealed with a plurality of phosphor layers are arranged on the second support plate in a row with an interval in the front-rear direction and the left-right direction (refer to FIG. 8G).

In addition, using an applicator, the transparent resin composition X was applied to the surface of the second release sheet (PTE sheet, trade name "SS4C", manufactured by Nippa) with a thickness of 50 μm so that the thickness after heating became 850 μm. Afterwards, it was heated at 90°C for 20 minutes to produce a B-stage transparent layer. Thereby, a transparent sheet including the second release sheet and the transparent layer is produced (the transparent layer preparation step, refer to FIG. 8G).

Then, the plurality of phosphor layers covering the plurality of LEDs are covered by the transparent layer of the transparent sheet (transparent layer placement step, refer to FIG. 8H).

Then, the second peeling sheet was peeled from the transparent layer (refer to FIG. 8I). Then, the sealed LED assembly is cut to separate a plurality of LEDs (refer to FIG. 8J).

After that, the LED sealed in the phosphor layer was peeled off from the double-sided tape (refer to the arrow in FIG. 8J).

In this way, an LED sealed with a phosphor layer is obtained (refer to FIG. 8K).

Comparative example 1

A coating sheet without a transparent layer was produced, and the LED was coated with the transparent layer of the coating sheet, except that the treatment was performed in the same manner as in Example 8 to obtain a phosphor layer-sealed LED (see FIG. 16).

Comparative example 2

A coating sheet without a transparent layer was prepared, and the LED was coated with the transparent layer of the coating sheet, except that the treatment was carried out in the same manner as in Example 14 to obtain a phosphor layer-sealed LED (see FIG. 17).

>Evaluation> [Luminescence Intensity] The LEDs sealed in the phosphor layer of each example and each comparative example were mounted on the substrate to manufacture an LED device (refer to the imaginary line in Figure 1, the imaginary line in Figure 2F, and the imaginary line in Figure 16, and the imaginary line in Figure 17 line). Then, the LED device was lit with a current of 300 mA in the total beam measuring device, and the luminous intensity was obtained. Based on the following criteria, the obtained luminous intensity was evaluated. A: Luminous intensity above 135lm B: Luminous intensity above 128lm, less than 135lm C: Luminous intensity above 118lm, less than 128lm D: Luminous intensity above 110lm, less than 118lm E: Luminous intensity less than 110lm [Color uniform Performance] 10 LEDs (n=10) of each embodiment and each comparative example sealed in the phosphor layer were mounted on the substrate to manufacture LED devices (refer to the imaginary line in Figure 1, the imaginary line in Figure 2F, and the diagram in Figure 16). The imaginary line of 17). Then, the CIE y of the optical characteristics was measured, and the deviation of 10 LEDs sealed with a phosphor layer was obtained. In addition, the case where the difference between the maximum value and the minimum value was 0.03 or less was evaluated as ○, and the case where it exceeded 0.03 was evaluated as ×. [Light distribution (color unevenness)] The phosphor layer-sealed LEDs of each example and each comparative example were mounted on the substrate to manufacture an LED device (refer to the imaginary line in Figure 1, the imaginary line in Figure 2F, and the figure in Figure 16). The imaginary line of 17). Then, using a light distribution measuring device (GP-7 manufactured by Otsuka Electronics Co., Ltd.) for this LED device, the chromaticity in the direction of -85° to 85° was measured in 5° units. Find the chromaticity deviation in all directions. In addition, the case where the difference between the maximum value and the minimum value was 0.02 or less was evaluated as ○, and the case where it exceeded 0.02 was evaluated as ×. [Reliability (black burn)] The LEDs sealed in the phosphor layer of each embodiment and each comparative example were mounted on the substrate to manufacture an LED device (refer to the imaginary line in Fig. 1, the imaginary line in Fig. 2F, and the imaginary line in Fig. 17) Imaginary line). Then, the LED device was lit for 1,000 hours with a current of 1A in the total beam measuring device. The phosphor layer and transparent layer were visually observed, and the reliability of the LED and the LED device sealed with the phosphor layer was evaluated according to the following criteria . ○: Black burn is not observed in the phosphor layer or the transparent layer. △: Black burn is slightly observed on the phosphor layer or the transparent layer. ×: Black burn is observed in the phosphor layer or the transparent layer. [Measurement of the content ratio of the phenyl group in the hydrocarbon group (R5) of the product obtained by the reaction of the silicone resin composition A] By 1H-NMR and 29Si-NMR, it was calculated by the silicone resin composition The content ratio of the hydrocarbon group directly bonded to the silicon atom (the average composition formula (3) R5) in the product obtained by the reaction of the compound A (ie, the silicone resin composition A without filler) (Mole%). Specifically, the A-stage silicone resin composition A was reacted (completely cured, C-staged) at 100°C for 1 hour without adding a filler to obtain a product. Then, the 1H-NMR and 29Si-NMR of the obtained product were measured to calculate the ratio (mol %) of the phenyl group in the hydrocarbon group (R5) directly bonded to the silicon atom. The result is 48%. The composition and formulation of each layer in each Example and each Comparative Example are shown in [Table 1]. [Table 1]

Table 2 shows the dimensions of each layer in each example and each comparative example and the evaluation of the LED sealed by the phosphor layer. [Table 2]

In addition, the above description is provided as an exemplary embodiment of the present invention, but it is only an example and is not interpreted in a limited manner. Variations of the present invention clarified by practitioners in this technical field are included in the scope of the following patent applications.

1: LED sealed with phosphor layer

2: LED

3: Phosphor layer

4: Transparent layer

5: Sealing sheet

6: Peel off the sheet

7: Support board

8: Sealed LED assembly

9: Wafer cutting saw

11: The first barrier

12: The second barrier

13: The first opening

14: The second opening

15: Fluorescent sealing sheet

17: 2nd support board

18: Transparent sheet

19: The second peeling sheet

21: lower surface

22: upper surface

23: side

24: recess

30: Containment Department

31: upper surface

32: lower surface

33: side

34: Inside

35: side

36: Flange

37: Outer peripheral surface

38: inner peripheral surface

39: upper surface

41: lower surface

42: upper surface

43: side

45: side

50: substrate

60: LED device

x: distance

y: distance

z: distance

α: distance

β: distance

γ: The length of the LED in the left and right direction

1 shows a cross-sectional view of a phosphor layer-sealed LED (a state where the side surface of the transparent layer and the side surface of the phosphor layer are formed on the same surface) as the first embodiment of the optical semiconductor device coated with a phosphor layer of the present invention.

2A to 2F are diagrams showing the manufacturing method of the phosphor layer sealed LED shown in FIG. 1 and the manufacturing method of the LED device using the phosphor layer sealed LED. FIG. 2A shows the step of preparing the sealing sheet. Fig. 2B shows the steps of preparing a plurality of LEDs, Fig. 2C shows the steps of sealing the plurality of LEDs by a sealing sheet, Fig. 2D shows the steps of monolithically forming a phosphor-layer-sealed LED, and Fig. 2E shows obtaining a phosphor-layer-sealed LED Fig. 2F shows the step of mounting the LED sealed in the phosphor layer on the substrate.

Figures 3A to 3E are step diagrams showing variations of the manufacturing method of the phosphor layer sealed LED and the manufacturing method of the LED device shown in Figures 2A to 2F. Figure 3A shows the steps of preparing the LED and the first barrier. 3B shows the step of arranging the first barrier, Figure 3C shows the step of forming the phosphor layer in the first barrier, Figure 3D shows the step of pulling the first barrier, and then preparing the second barrier, and Figure 3E shows the step of arranging the second barrier step.

Figures 4F to 4I are following Figure 3E, showing the steps shown in Figures 2A to 2E of the phosphor layer sealed LED manufacturing method and LED device manufacturing method changes, Figure 4F shows the transparent layer is formed on Steps in the second barrier. Figure 4G shows the steps of cutting off the phosphor layer and the interface between the transparent layer and the second barrier. Figure 4H shows the steps to obtain an LED sealed with the phosphor layer. Figure 4I shows the phosphor layer. The step of mounting the sealed LED to the substrate.

Fig. 5 shows a cross-sectional view of a modified example of the LED sealed with a phosphor layer shown in Fig. 1 (a state where the lower surface of the phosphor layer is located above the lower surface of the LED).

6 shows a cross-sectional view of a phosphor layer-sealed LED (a state where the side surface of the transparent layer is formed on the outside with respect to the side surface of the phosphor layer) as the second embodiment of the optical semiconductor device coated with a phosphor layer of the present invention.

7A to 7F are diagrams showing the manufacturing method of the phosphor layer sealed LED shown in FIG. 6 and the manufacturing method of the LED device using the phosphor layer sealed LED. FIG. 7A shows the preparation of a plurality of LEDs and phosphors. The step of sealing the sheet, Figure 7B shows the step of sealing a plurality of LEDs by the phosphor layer, Figure 7C shows the step of peeling the peeling sheet from the phosphor layer, and Figure 7D shows the step of monolithically forming the phosphor layer-sealed LED Fig. 7E shows the step of peeling the LED sealed with the phosphor layer from the support plate, and Fig. 7F shows the step of obtaining the LED sealed with the phosphor layer.

Figures 8G~8L are following Figure 7F, showing the manufacturing method of the phosphor layer-sealed LED shown in Figure 6 and the steps of the manufacturing method of the LED device using the phosphor layer-sealed LED, Figure 8G shows the multiple The step of placing the LEDs sealed in the phosphor layer on the second support plate and preparing a transparent sheet. Figure 8H shows the step of sealing a plurality of LEDs sealed in the phosphor layer with a transparent layer. Figure 8I shows the second peeling sheet Fig. 8J shows the step of singulating the LED with the phosphor layer sealed, Fig. 8K shows the step of obtaining the LED sealed with the phosphor layer, and Fig. 8L shows the mounting of the LED sealed with the phosphor layer on the substrate. step.

Figure 9 shows a modified example of the phosphor layer sealed LED shown in Figure 6 (with the lower surface of the phosphor layer and the lower surface of the transparent layer exposed from the LED, and the exposed surface has a higher side than the lower surface of the LED Sectional view of part of the state).

10A to 10E show a step diagram of a variation of the method of obtaining a phosphor layer-sealed LED shown in FIG. 7, FIG. 10A shows the steps of preparing a plurality of LEDs and fluorescent sealing sheets, and FIG. 10B shows the steps of using fluorescent light Figure 10C shows the step of peeling off the peeling sheet from the phosphor layer, Figure 10D shows the step of monolithically forming a phosphor layer sealed LED, and Figure 10E shows the step of obtaining a phosphor layer sealed LED .

11 shows a cross-sectional view of a phosphor layer-sealed LED (a state in which the transparent layer has a flange portion) as a third embodiment of the phosphor layer-coated optical semiconductor element of the present invention.

12A~12D are diagrams showing the manufacturing method of the phosphor layer-sealed LED shown in FIG. 11 and the manufacturing method of the LED device using the phosphor layer-sealed LED, and FIG. 12A shows the preparation of a plurality of LEDs and phosphors The step of sealing the sheet, FIG. 12B shows the step of sealing a plurality of LEDs by the phosphor layer, FIG. 12C shows the step of forming recesses in the phosphor layer, and FIG. 12D shows the step of preparing the transparent sheet.

Figures 13E to 13I are following Figure 12D, showing the manufacturing method of the phosphor layer-sealed LED shown in Figure 11 and the steps of the manufacturing method of the LED device using the phosphor layer-sealed LED, Figure 13E shows the transparent The layer is arranged on the upper surface of the phosphor layer, and then the second peeling sheet is peeled off from the transparent layer. Figure 13F shows the step of monolithically forming a phosphor layer-sealed LED, and Figure 13G shows the process of obtaining a phosphor layer-sealed LED Steps, FIG. 13H shows the step of transferring the LED sealed in the phosphor layer to the transfer sheet, and FIG. 13I shows the step of mounting the LED sealed in the phosphor layer to the substrate.

14A to 14D are diagrams showing the steps of the manufacturing method of the phosphor layer-sealed LED shown in FIG. 11 and the manufacturing method of the LED device using the phosphor layer-sealed LED. FIG. 14A shows the preparation of a plurality of LEDs Fig. 14B shows the step of sealing a plurality of LEDs with the phosphor layer, Fig. 14C shows the step of peeling the peeling sheet from the phosphor layer, and Fig. 14D shows the step of preparing the transparent sheet.

15E~FIG. 15H are following FIG. 14D, showing the manufacturing method of the phosphor layer-sealed LED shown in FIG. 11, and the step diagram of the variation of the manufacturing method of the LED device using the phosphor layer-sealed LED, FIG. 15E Shows the step of arranging the transparent layer on the upper surface of the phosphor layer, and then peeling the second peeling sheet from the transparent layer. Figure 15F shows the step of monolithic LEDs with phosphor layer sealing, and Figure 15G shows obtaining the phosphor layer sealing The steps of LED, Fig. 15H shows the step of mounting the LED sealed in the phosphor layer on the substrate.

Fig. 16 shows a cross-sectional view of the phosphor layer-sealed LED of Comparative Example 1 (the state without a transparent layer).

Fig. 17 shows a cross-sectional view of a phosphor layer-sealed LED of Comparative Example 2 (a state in which a flange is formed with the phosphor layer but no transparent layer).

1: LED sealed with phosphor layer

2: LED

3: Phosphor layer

4: Transparent layer

21: lower surface

22: upper surface

23: side

30: Containment Department

31: upper surface

32: lower surface

33: side

34: Inside

35: side

41: lower surface

42: upper surface

43: side

50: substrate

x: distance

y: distance

z: distance

α: distance

γ: The length of the LED in the left and right direction

Claims (10)

A light emitting device, comprising: A substrate; An optical semiconductor element arranged on the substrate; A covering layer directly covering the optical semiconductor element; and A transparent layer covering at least a part of the covering layer; Wherein, the optical semiconductor device has a device-side contact surface that can be in contact with the substrate, a device-side opposing surface with respect to the device-side contact surface on one side and is arranged oppositely by a distance x, and a device-side connection surface Connect the element-side contact possible surface and the element-side facing surface; the covering layer has a covering-side first facing surface with respect to the element-side facing surface at a distance y on the side and arranged oppositely; and the distance The value (y/x) obtained by dividing y by the distance x is 1.25 or more and 5 or less. The light-emitting device of claim 1, wherein the cover layer contains a first transparent composition, and the refractive index RIp of the first transparent composition is 1.45 or more and 1.60 or less. The light-emitting device of claim 1, wherein the chromaticity difference of the light-emitting device from -85 degrees to 85 degrees is <0.02. Such as the light-emitting device of claim 1, wherein the transparent layer has a transparent side facing surface opposite to the first facing surface of the cover side at a distance z on the side, and the distance y is between the distance z The sum (y+z) is 0.25 mm or more and 2 mm or less. A light emitting device, comprising: A substrate; An optical semiconductor element arranged on the substrate; A covering layer directly covering the optical semiconductor element; and A transparent layer covering at least a part of the covering layer; Wherein, the optical semiconductor device has a device-side contact surface capable of contacting the substrate, a device-side facing surface with respect to the device-side contact surface on one side spaced apart by a distance x and is disposed oppositely, and a device-side connection surface Connect the component-side contact possible surface and the component-side facing surface; the covering layer has a first facing surface of the covering-side opposite to the component-side facing surface at a distance y on the side and is disposed oppositely, and a covering The second side facing surface is opposed to the component side connecting surface at a distance α in an orthogonal direction orthogonal to the one side direction; Wherein, the value obtained by dividing the distance y by the distance α (y/α) is 1 or more and 2.5 or less; Wherein, the chromaticity difference of the light-emitting device from -85 degrees to 85 degrees is <0.02. Such as the light emitting device of claim 5, wherein the second facing surface of the covering side exceeds the connecting surface of the device side. The light-emitting device of claim 5, wherein the cover layer contains a first transparent composition, and the refractive index RIp of the first transparent composition is 1.45 or more and 1.60 or less. The light-emitting device according to claim 5, wherein the transparent layer has a transparent side connecting surface that is opposed to the second opposite surface of the cover side at a distance β in an orthogonal direction orthogonal to the one side direction, and And the sum of the distance α and the distance β (α+β) is 50 μm or more and 2000 μm or less. A light emitting device, comprising: A substrate; An optical semiconductor element arranged on the substrate; A covering layer directly covering the optical semiconductor element and containing a first transparent composition having a first refractive index; and A transparent layer covering the covering layer and the optical semiconductor element, and comprising a second transparent composition having a second refractive index, wherein the first refractive index is greater than the second refractive index and the first refractive index is The second refractive index difference is greater than 0.05; Among them, when the light-emitting device is lit with a current of 300mA, its luminous intensity is above 135lm. The optical semiconductor device of claim 9, wherein the transparent layer is formed of a plurality of layers.

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