TWM537717U - Optical semiconductor element covered with phosphor layer - Google Patents

Optical semiconductor element covered with phosphor layer Download PDF

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Publication number
TWM537717U
TWM537717U TW104220246U TW104220246U TWM537717U TW M537717 U TWM537717 U TW M537717U TW 104220246 U TW104220246 U TW 104220246U TW 104220246 U TW104220246 U TW 104220246U TW M537717 U TWM537717 U TW M537717U
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Taiwan
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phosphor layer
led
transparent
layer
phosphor
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TW104220246U
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Chinese (zh)
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Hirokazu Matsuda
Cheng Chang
Naoko Yoshida
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Nitto Denko Corp
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Description

被覆有螢光體層之光半導體元件 Optical semiconductor component coated with a phosphor layer

本創作係關於一種被覆有螢光體層之光半導體元件及其製造方法,詳細而言係關於一種被覆有螢光體層之光半導體元件、及用以製造其之方法。 The present invention relates to an optical semiconductor element coated with a phosphor layer and a method of manufacturing the same, and more particularly to an optical semiconductor element coated with a phosphor layer and a method for fabricating the same.

先前,業界提出有具備下表面露出之光半導體元件、及被覆光半導體元件之上表面與側面之螢光體層的被覆有螢光體層之光半導體元件(例如參照日本專利特開2012-39013號公報)。 In the prior art, an optical semiconductor element having a thin semiconductor element exposed on the lower surface and a phosphor layer covering the upper surface and the side surface of the optical semiconductor element has been proposed (for example, refer to Japanese Laid-Open Patent Publication No. 2012-39013 ).

然而,業界對被覆有螢光體層之光半導體元件要求優異之發光強度。但是,日本專利特開2012-39013號中記載之被覆有螢光體層之光半導體元件存在無法滿足上述發光強度之不良情況。 However, the industry requires excellent luminous intensity for an optical semiconductor element coated with a phosphor layer. However, the optical semiconductor element coated with the phosphor layer described in Japanese Laid-Open Patent Publication No. 2012-39013 has a problem that the above-described luminous intensity cannot be satisfied.

本創作之目的在於提供一種發光強度優異之被覆有螢光體層之光半導體元件及其製造方法。 The object of the present invention is to provide an optical semiconductor element coated with a phosphor layer having excellent luminous intensity and a method of manufacturing the same.

本創作[1]包含一種被覆有螢光體層之光半導體元件,該被覆有螢光體層之光半導體元件具備光半導體元件、被覆上述光半導體元件之螢光體層、及被覆上述螢光體層之至少一部分之透明層。 The present invention [1] includes an optical semiconductor element coated with a phosphor layer, wherein the optical semiconductor element coated with the phosphor layer includes an optical semiconductor element, a phosphor layer covering the optical semiconductor element, and at least a layer covering the phosphor layer Part of the transparent layer.

該被覆有螢光體層之光半導體元件由於具備被覆螢光體層之至少一部分之透明層,故而可使發光強度提高。 Since the optical semiconductor element coated with the phosphor layer has a transparent layer covering at least a part of the phosphor layer, the light-emitting intensity can be improved.

本創作[2]包含如[1]記載之被覆有螢光體層之光半導體元件,其中上述光半導體元件具有:可與基板接觸之元件側接觸可能面、相對 於上述元件側接觸可能面於一側隔開距離x而對向配置之元件側對向面、以及連結於上述元件側接觸可能面及上述元件側對向面之元件側連結面,上述螢光體層具有:相對於上述元件側對向面於上述一側隔開距離y而對向配置之螢光體側第1對向面、及相對於上述元件側連結面於與上述一方向正交之正交方向隔開距離α而對向配置之螢光體側第2對向面,上述透明層具有:相對於上述螢光體側第1對向面於上述一側隔開距離z而對向配置之透明側對向面、及連結於上述透明側對向面且在上述一方向上投影時相對於上述元件側連結面於上述正交方向隔開間隔地配置之透明側連結面,並且 The present invention [2] includes the optical semiconductor element coated with the phosphor layer as described in [1], wherein the optical semiconductor element has a component side contact surface which can be in contact with the substrate, and a relative The element side contact surface may face the component side opposite surface disposed at a distance x from the side, and the element side connecting surface connected to the element side contact possible surface and the element side opposite surface, the fluorescent light The body layer has a first opposite surface on the phosphor side that is opposed to the element side opposite surface y at a distance y from the side, and an orthogonal to the one side in the one direction with respect to the element side connecting surface The second opposite surface of the phosphor side disposed opposite to each other with the distance α in the orthogonal direction, the transparent layer having a distance z from the first opposing surface on the side of the phosphor a transparent side connecting surface disposed on the transparent side and a transparent side connecting surface that is disposed at an interval in the orthogonal direction with respect to the element side connecting surface when being projected on the transparent side opposing surface and projected in the one side upward, and

該被覆有螢光體層之光半導體元件満足下述(1)~(4)之全部。 The optical semiconductor element coated with the phosphor layer covers all of the following (1) to (4).

(1)用上述距離y除以上述距離x所得之值(y/x)為1以上且5以下。 (1) The value (y/x) obtained by dividing the distance y by the distance x is 1 or more and 5 or less.

(2)上述距離y與上述距離z之和(y+z)為0.25mm以上且2mm以下。 (2) The sum (y+z) of the distance y and the distance z is 0.25 mm or more and 2 mm or less.

(3)上述距離α和上述螢光體側第2對向面與上述透明側連結面之距離β之和(α+β)為50μm以上且2000μm以下。其中,上述距離β為0以上。 (3) The sum (α + β) of the distance α and the distance β between the second opposing surface on the phosphor side and the transparent side connecting surface is 50 μm or more and 2000 μm or less. The distance β is 0 or more.

(4)用上述距離y除以上述距離α所得之值(y/α)為1以上且2.5以下。 (4) The value (y/α) obtained by dividing the distance y by the distance α is 1 or more and 2.5 or less.

該被覆有螢光體層之光半導體元件由於滿足上述(1)~(4)之全部,故而可使發光強度更進一步提高且具有優異之色均勻性,並且抑制色不均。 Since the optical semiconductor element coated with the phosphor layer satisfies all of the above (1) to (4), it is possible to further improve the light emission intensity, to have excellent color uniformity, and to suppress color unevenness.

本創作[3]包含如[1]或[2]記載之被覆有螢光體層之光半導體元件,其中上述螢光體層含有螢光體與第1透明組合物,並且上述第1透明組合物之折射率RIp為1.45以上且1.60以下。 The optical semiconductor element coated with the phosphor layer according to [1] or [2], wherein the phosphor layer contains a phosphor and a first transparent composition, and the first transparent composition The refractive index RIp is 1.45 or more and 1.60 or less.

該被覆有螢光體層之光半導體元件由於第1透明組合物之折射率RIp為1.45以上且1.60以下,故而可使發光強度提高。 In the optical semiconductor element coated with the phosphor layer, since the refractive index RIp of the first transparent composition is 1.45 or more and 1.60 or less, the light-emitting intensity can be improved.

本創作[4]包含如[1]至[3]中任一項記載之被覆有螢光體層之光半導體元件,其中上述螢光體層含有螢光體與第1透明組合物,上述透明層含有第2透明組合物,並且自上述第1透明組合物之折射率RIp減去上述第2透明組合物之折射率RIt所得之值(RIp-RIt)為-0.70以上且0.20以下。 The optical semiconductor element coated with the phosphor layer according to any one of [1] to [3] wherein the phosphor layer contains a phosphor and a first transparent composition, and the transparent layer contains In the second transparent composition, the value (RIp-RIt) obtained by subtracting the refractive index RIt of the second transparent composition from the refractive index RIp of the first transparent composition is -0.70 or more and 0.20 or less.

該被覆有螢光體層之光半導體元件由於自第1透明組合物之折射率RIp減去第2透明組合物之折射率RIt所得之值(RIp-RIt)為-0.70以上且0.20以下,故而可使發光強度提高。 In the optical semiconductor element coated with the phosphor layer, the value (RIp-RIt) obtained by subtracting the refractive index RIt of the second transparent composition from the refractive index RIp of the first transparent composition is -0.70 or more and 0.20 or less. Increase the luminous intensity.

本創作[5]包含如[4]記載之被覆有螢光體層之光半導體元件,其中上述RIp-上述RIt為0.05以上。 The present invention [5] includes the optical semiconductor element coated with the phosphor layer according to [4], wherein the RIp-the above RIt is 0.05 or more.

該被覆有螢光體層之光半導體元件由於RIp-RIt為0.05以上,故而可使發光強度更進一步提高。 In the optical semiconductor element coated with the phosphor layer, since the RIp-RIt is 0.05 or more, the light emission intensity can be further improved.

本創作[6]包含如[2]記載之被覆有螢光體層之光半導體元件,其中上述螢光體側第2對向面與上述透明側連結面於上述一方向上形成為同一面。 The optical semiconductor element coated with the phosphor layer according to the above [2], wherein the second opposite surface of the phosphor side and the transparent side connecting surface are formed in the same plane in the one direction.

可藉由簡便之方法,於被覆有螢光體層之光半導體元件中之螢光體層與透明層分別形成螢光體側第2對向面與透明側連結面。 The phosphor-side second opposing surface and the transparent-side connecting surface of the phosphor layer and the transparent layer in the optical semiconductor element coated with the phosphor layer can be formed by a simple method.

本創作[7]包含如[2]或[6]記載之被覆有螢光體層之光半導體元件,其中上述距離α超過50μm。 The present invention [7] includes the optical semiconductor element coated with the phosphor layer as described in [2] or [6], wherein the distance α exceeds 50 μm.

該被覆有螢光體層之光半導體元件由於距離α超過50μm,故而可使色均勻性提高。 Since the optical semiconductor element coated with the phosphor layer has a distance α exceeding 50 μm, color uniformity can be improved.

本創作[8]包含一種被覆有螢光體層之光半導體元件之製造方法,其係用以製造上述被覆有螢光體層之光半導體元件之方法,並且包括:將上述螢光體層形成於上述透明層之表面而製造被覆片材之步驟、及以使上述螢光體層被覆複數個光半導體元件之方式配置上述被覆片材之步驟。 The present invention [8] includes a method of manufacturing an optical semiconductor element coated with a phosphor layer, the method for manufacturing the above-described optical semiconductor element coated with a phosphor layer, and comprising: forming the phosphor layer on the transparent layer The step of producing a coated sheet on the surface of the layer and the step of arranging the coated sheet so that the phosphor layer is coated with a plurality of optical semiconductor elements.

根據該被覆有螢光體層之光半導體元件之製造方法,使用被覆片材,可簡便地製造發光強度優異之被覆有螢光體層之光半導體元件。 According to the method for producing an optical semiconductor element coated with a phosphor layer, the coated wafer can be used to easily produce an optical semiconductor element coated with a phosphor layer having excellent light-emitting intensity.

本創作[9]包含如[8]記載之被覆有螢光體層之光半導體元件之製造方法,其進而包括:以使上述被覆有螢光體層之光半導體元件單片化之方式切斷上述被覆片材之步驟。 The production method of the optical semiconductor element coated with the phosphor layer according to [8], further comprising: cutting the coating so that the optical semiconductor element coated with the phosphor layer is singulated The steps of the sheet.

根據該被覆有螢光體層之光半導體元件之製造方法,可簡便地製造具有所需尺寸之被覆有螢光體層之光半導體元件。 According to the method of manufacturing an optical semiconductor element coated with a phosphor layer, an optical semiconductor element coated with a phosphor layer having a desired size can be easily manufactured.

本創作[10]包含一種被覆有螢光體層之光半導體元件之製造方法,其係用以製造如[1]至[7]中任一項記載之被覆有螢光體層之光半導體元件之方法,並且包括:螢光體層準備步驟,其準備片狀之螢光體層;螢光體層配置步驟,其係以被覆上述光半導體元件之方式配置上述片狀之螢光體層;及透明層配置步驟,其係於上述螢光體層配置步驟之後以被覆上述螢光體層之至少一部分之方式配置上述透明層。 The present invention [10] includes a method of manufacturing an optical semiconductor device coated with a phosphor layer, which is a method for manufacturing an optical semiconductor device coated with a phosphor layer according to any one of [1] to [7] And a phosphor layer preparation step of preparing a flake-shaped phosphor layer; a phosphor layer disposing step of disposing the sheet-like phosphor layer so as to cover the photo-semiconductor element; and a transparent layer disposing step The transparent layer is disposed to cover at least a portion of the phosphor layer after the phosphor layer disposing step.

該被覆有螢光體層之光半導體元件之製造方法由於包括準備片狀之螢光體層之螢光體層準備步驟、及以被覆光半導體元件之方式配置片狀螢光體層之螢光體層配置步驟,故而使用片狀之螢光體層,可簡便地製造發光強度優異之被覆有螢光體層之光半導體元件。 The method for producing an optical semiconductor device coated with a phosphor layer includes a phosphor layer preparation step of preparing a sheet-shaped phosphor layer, and a phosphor layer layer disposing step of disposing the sheet-like phosphor layer so as to cover the photo-semiconductor element. Therefore, it is possible to easily produce an optical semiconductor element coated with a phosphor layer having excellent light-emitting intensity by using a sheet-like phosphor layer.

本創作[11]包含如[10]記載之被覆有螢光體層之光半導體元件之製造方法,其中於上述螢光體層配置步驟中,以埋設複數個上述光半導體元件之方式配置上述片狀之螢光體層;並且該方法進而包括:單片化/去除步驟,其係於上述螢光體層配置步驟之後且上述透明層配置步驟之前,對應於複數個上述光半導體元件而將上述螢光體層單片化,並且將相對於上述光半導體元件位於遠距離之上述螢光體層去除。 The production method of the optical semiconductor element coated with the phosphor layer according to the above [10], wherein the sheet-like layer is disposed in the phosphor layer layer arranging step of embedding a plurality of the optical semiconductor elements a phosphor layer; and the method further includes a singulation/removal step of affixing the phosphor layer to a plurality of the optical semiconductor elements after the phosphor layer arranging step and before the transparent layer arranging step The wafer is removed, and the phosphor layer located at a long distance from the optical semiconductor element is removed.

根據該被覆有螢光體層之光半導體元件之製造方法,於單片化/ 去除步驟中,於螢光體層配置步驟之後且透明層配置步驟之前,對應於複數個光半導體元件而將螢光體層單片化之同時,將相對於光半導體元件位於遠距離之螢光體層去除,因此可以較少之步驟數製造具有所需尺寸之被覆有螢光體層之光半導體元件。 According to the method of manufacturing an optical semiconductor element coated with a phosphor layer, it is singulated/ In the removing step, after the phosphor layer layer arranging step and before the transparent layer arranging step, the phosphor layer is diced corresponding to the plurality of optical semiconductor elements, and the phosphor layer located at a long distance from the optical semiconductor element is removed. Therefore, an optical semiconductor element coated with a phosphor layer having a desired size can be manufactured in a small number of steps.

本創作[12]包含如[11]記載之被覆有螢光體層之光半導體元件之製造方法,其中上述光半導體元件具有:可與基板接觸之元件側接觸可能面、相對於上述元件側接觸可能面於一側隔開距離x而對向配置之元件側對向面、以及連結於上述元件側接觸可能面及上述元件側對向面之元件側連結面,於上述螢光體層配置步驟中,以被覆複數個上述光半導體元件之上述元件側連結面之方式配置上述片狀之螢光體層,於上述單片化/去除步驟中,使被覆上述元件側連結面之上述螢光體層殘留。 The present invention [12] includes the method of manufacturing a photo-semiconductor element coated with a phosphor layer as described in [11], wherein the photo-semiconductor element has an element side contactable surface that can be in contact with the substrate, and is in contact with the element side The element-side opposing surface disposed opposite to the side by a distance x and the element-side connecting surface coupled to the element-side contact possible surface and the element-side opposing surface, in the phosphor layer arranging step, The sheet-shaped phosphor layer is disposed so as to cover the element-side connecting surface of the plurality of optical semiconductor elements, and the phosphor layer covering the element-side connecting surface remains in the singulation/removal step.

根據該被覆有螢光體層之光半導體元件之製造方法,於單片化/去除步驟中使被覆元件側連結面之螢光體層殘留,故而可簡便地製造具備所需尺寸之螢光體層之被覆有螢光體層之光半導體元件。 According to the method for producing an optical semiconductor element coated with the phosphor layer, the phosphor layer on the surface of the coated element side is left in the singulation/removal step, so that the coating of the phosphor layer having the desired size can be easily produced. An optical semiconductor component having a phosphor layer.

本創作[13]包含如[10]至[12]中任一項記載之被覆有螢光體層之光半導體元件之製造方法,其進而包括準備片狀之透明層之透明層準備步驟,於上述透明層準備步驟中,以被覆上述螢光體層之至少一部分之方式配置上述片狀之透明層。 The method of manufacturing a photo-semiconductor element coated with a phosphor layer according to any one of [10] to [12], further comprising a transparent layer preparation step of preparing a sheet-like transparent layer, In the transparent layer preparation step, the sheet-like transparent layer is disposed so as to cover at least a part of the phosphor layer.

1‧‧‧螢光體層密封之LED 1‧‧‧Silver body sealed LED

2‧‧‧LED 2‧‧‧LED

3‧‧‧螢光體層 3‧‧‧Fluorescent layer

4‧‧‧透明層 4‧‧‧Transparent layer

5‧‧‧密封片材 5‧‧‧Seal sheet

6‧‧‧剝離片材 6‧‧‧ peeling sheet

7‧‧‧支持板 7‧‧‧Support board

8‧‧‧密封LED集合體 8‧‧‧ Sealed LED assembly

9‧‧‧晶圓切割鋸 9‧‧‧ Wafer cutting saw

11‧‧‧第1障壁 11‧‧‧1st barrier

12‧‧‧第2障壁 12‧‧‧2nd barrier

13‧‧‧第1開口部 13‧‧‧1st opening

14‧‧‧第2開口部 14‧‧‧2nd opening

15‧‧‧螢光密封片材 15‧‧‧Fluorescent sealing sheet

17‧‧‧第2支持板 17‧‧‧2nd support board

18‧‧‧透明片材 18‧‧‧Transparent sheet

19‧‧‧第2剝離片材 19‧‧‧2nd peeling sheet

21‧‧‧下表面 21‧‧‧ Lower surface

22‧‧‧上表面 22‧‧‧ upper surface

23‧‧‧側面 23‧‧‧ side

24‧‧‧凹部 24‧‧‧ recess

30‧‧‧收容部 30‧‧‧ Housing Department

31‧‧‧上表面 31‧‧‧ upper surface

32‧‧‧下表面 32‧‧‧ lower surface

33‧‧‧側面 33‧‧‧ side

34‧‧‧內面 34‧‧‧ inside

35‧‧‧側部 35‧‧‧ side

36‧‧‧凸緣部 36‧‧‧Flange

37‧‧‧外周面 37‧‧‧ outer perimeter

38‧‧‧內周面 38‧‧‧ inner circumference

39‧‧‧上表面 39‧‧‧ upper surface

41‧‧‧下表面 41‧‧‧ lower surface

42‧‧‧上表面 42‧‧‧ upper surface

43‧‧‧側面 43‧‧‧ side

45‧‧‧側部 45‧‧‧ side

50‧‧‧基板 50‧‧‧Substrate

60‧‧‧LED裝置 60‧‧‧LED device

x‧‧‧距離 Distance from x‧‧‧

y‧‧‧距離 Y‧‧‧ distance

z‧‧‧距離 Z‧‧‧distance

α‧‧‧距離 ‧‧‧‧ distance

β‧‧‧距離 ‧‧‧‧ distance

γ‧‧‧LED之左右方向長度 γ‧‧‧LED length in the left and right direction

圖1表示作為本創作之被覆有螢光體層之光半導體元件之第1實施形態的螢光體層密封之LED(透明層之側面與螢光體層之側面形成為同一面之態樣)的剖視圖。 Fig. 1 is a cross-sectional view showing a phosphor layer-sealed LED (the side surface of the transparent layer and the side surface of the phosphor layer being formed in the same plane) as the first embodiment of the optical layer semiconductor element coated with the phosphor layer.

圖2A~圖2F係表示圖1所示之螢光體層密封之LED之製造方法、及使用螢光體層密封之LED之LED裝置之製造方法的步驟圖, 圖2A表示準備密封片材之步驟, 圖2B表示準備複數個LED之步驟,圖2C表示藉由密封片材密封複數個LED之步驟,圖2D表示單片化成螢光體層密封之LED之步驟,圖2E表示獲得螢光體層密封之LED之步驟,圖2F表示將螢光體層密封之LED安裝至基板之步驟。 2A to 2F are process diagrams showing a method of manufacturing a phosphor layer-sealed LED shown in Fig. 1 and a method of manufacturing an LED device using a phosphor layer-sealed LED. Figure 2A shows the steps of preparing a sealing sheet, 2B shows a step of preparing a plurality of LEDs, FIG. 2C shows a step of sealing a plurality of LEDs by a sealing sheet, FIG. 2D shows a step of monolithizing the phosphor layer sealed LED, and FIG. 2E shows a step of obtaining a phosphor layer sealed LED. Step 2F shows the step of mounting the phosphor layer sealed LED to the substrate.

圖3A~圖3E係表示圖2A~圖2F所示之螢光體層密封之LED之製造方法及LED裝置之製造方法之變化例的步驟圖,圖3A表示準備LED及第1障壁之步驟,圖3B表示配置第1障壁之步驟,圖3C表示將螢光體層形成於第1障壁內之步驟,圖3D表示提拉第1障壁,繼而準備第2障壁之步驟,圖3E表示配置第2障壁之步驟。 3A to 3E are process diagrams showing a modification of the method of manufacturing the phosphor layer-sealed LED and the method of manufacturing the LED device shown in FIGS. 2A to 2F, and FIG. 3A shows a step of preparing the LED and the first barrier rib. 3B shows a step of arranging the first barrier ribs, FIG. 3C shows a step of forming the phosphor layer in the first barrier ribs, FIG. 3D shows a step of pulling the first barrier ribs, and then a second barrier rib is prepared, and FIG. 3E shows a step of arranging the second barrier ribs. step.

圖4F~圖4I係繼圖3E之後,表示圖2A~圖2E所示之螢光體層密封之LED之製造方法及LED裝置之製造方法之變化例的步驟圖,圖4F表示將透明層形成於第2障壁內之步驟,圖4G表示沿螢光體層及透明層與第2障壁之界面切斷該等之步驟,圖4H表示獲得螢光體層密封之LED之步驟,圖4I表示將螢光體層密封之LED安裝至基板之步驟。 4F to FIG. 4I are diagrams showing a modification of the method for manufacturing the phosphor layer-sealed LED and the method for manufacturing the LED device shown in FIG. 2A to FIG. 2E, and FIG. 4F shows the transparent layer formed thereon. FIG. 4G shows a step of cutting the phosphor layer and the interface between the transparent layer and the second barrier, FIG. 4H shows a step of obtaining a phosphor layer sealed LED, and FIG. 4I shows a phosphor layer. The step of mounting the sealed LED to the substrate.

圖5表示圖1所示之螢光體層密封之LED之變化例(螢光體層之下表面位於較LED之下表面更靠上側之態樣)的剖視圖。 Fig. 5 is a cross-sectional view showing a variation of the phosphor layer-sealed LED shown in Fig. 1 (the lower surface of the phosphor layer is located on the upper side of the lower surface of the LED).

圖6表示作為本創作之被覆有螢光體層之光半導體元件之第2實施形態的螢光體層密封之LED(透明層之側面相對於螢光體層之側面形成於外側之態樣)的剖視圖。 Fig. 6 is a cross-sectional view showing a phosphor layer-sealed LED (a side surface of a transparent layer formed on the outer side with respect to a side surface of a phosphor layer) of a second embodiment of the present invention, which is coated with a phosphor layer.

圖7A~圖7F係表示圖6所示之螢光體層密封之LED之製造方法、及使用螢光體層密封之LED之LED裝置之製造方法的步驟圖, 圖7A表示準備複數個LED與螢光密封片材之步驟,圖7B表示藉由螢光體層密封複數個LED之步驟,圖7C表示將剝離片材自螢光體層剝離之步驟,圖7D表示單片化成螢光體層密封之LED之步驟,圖7E表示將螢光體層密封之LED自支持板剝離之步驟,圖7F表示獲得螢光體層密封之LED之步驟。 7A to 7F are process diagrams showing a method of manufacturing a phosphor layer-sealed LED shown in Fig. 6 and a method of manufacturing an LED device using a phosphor layer-sealed LED. Fig. 7A shows a step of preparing a plurality of LEDs and a fluorescent sealing sheet, Fig. 7B shows a step of sealing a plurality of LEDs by a phosphor layer, and Fig. 7C shows a step of peeling the peeling sheet from the phosphor layer, and Fig. 7D shows a single step. The step of forming a phosphor layer sealed LED, FIG. 7E shows the step of peeling off the phosphor layer sealed LED from the support sheet, and FIG. 7F shows the step of obtaining the phosphor layer sealed LED.

圖8G~圖8L係繼圖7F之後,表示圖6所示之螢光體層密封之LED之製造方法、及使用螢光體層密封之LED之LED裝置之製造方法的步驟圖,圖8G表示將複數個螢光體層密封之LED再配置於第2支持板並且準備透明片材之步驟,圖8H表示將複數個螢光體層密封之LED藉由透明層密封之步驟,圖8I表示將第2剝離片材自透明層剝離之步驟,圖8J表示單片化成螢光體層密封之LED之步驟,圖8K表示獲得螢光體層密封之LED之步驟,圖8L表示將螢光體層密封之LED安裝至基板之步驟。 8G to FIG. 8L are steps subsequent to FIG. 7F, showing a method of manufacturing the phosphor layer sealed LED shown in FIG. 6, and a method of manufacturing the LED device using the phosphor layer sealed LED, and FIG. 8G shows a plurality of steps. The phosphor layer sealed LED is further disposed on the second support plate and the transparent sheet is prepared. FIG. 8H shows the step of sealing the LEDs sealed by the plurality of phosphor layers by the transparent layer, and FIG. 8I shows the second peeling sheet. The step of peeling off the material from the transparent layer, FIG. 8J shows the step of monolithizing the LED sealed by the phosphor layer, FIG. 8K shows the step of obtaining the LED sealed by the phosphor layer, and FIG. 8L shows the step of mounting the LED sealed by the phosphor layer to the substrate. step.

圖9表示圖6所示之螢光體層密封之LED之變化例(具備螢光體層之下表面及透明層之下表面自LED露出之露出面,且露出面具有較LED之下表面更靠上側之部分之態樣)的剖視圖。 Fig. 9 is a view showing a variation of the phosphor layer sealed LED shown in Fig. 6 (the exposed surface of the lower surface of the phosphor layer and the lower surface of the transparent layer exposed from the LED, and the exposed surface has an upper side than the lower surface of the LED A cross-sectional view of the part of the aspect.

圖10A~圖10E表示圖7所示之獲得螢光體層密封之LED之方法之變化例的步驟圖,圖10A表示準備複數個LED與螢光密封片材之步驟,圖10B表示藉由螢光體層密封複數個LED之步驟,圖10C表示將剝離片材自螢光體層剝離之步驟,圖10D表示單片化成螢光體層密封之LED之步驟, 圖10E表示獲得螢光體層密封之LED之步驟。 10A to 10E are flowcharts showing a variation of the method of obtaining the phosphor layer-sealed LED shown in Fig. 7. Fig. 10A shows a step of preparing a plurality of LEDs and a fluorescent sealing sheet, and Fig. 10B shows a step of preparing a plurality of LEDs and a fluorescent sealing sheet. Step of sealing a plurality of LEDs by a body layer, FIG. 10C shows a step of peeling off the release sheet from the phosphor layer, and FIG. 10D shows a step of monolithizing the LED to be sealed by a phosphor layer. Figure 10E shows the steps of obtaining a phosphor layer sealed LED.

圖11表示作為本創作之被覆有螢光體層之光半導體元件之第3實施形態的螢光體層密封之LED(透明層具有凸緣部之態樣)的剖視圖。 Fig. 11 is a cross-sectional view showing a phosphor layer-sealed LED (a state in which a transparent layer has a flange portion) of a third embodiment of the optical semiconductor element coated with the phosphor layer of the present invention.

圖12A~圖12D係表示圖11所示之螢光體層密封之LED之製造方法、及使用螢光體層密封之LED之LED裝置之製造方法的步驟圖,圖12A表示準備複數個LED與螢光密封片材之步驟,圖12B表示藉由螢光體層密封複數個LED之步驟,圖12C表示於螢光體層形成凹部之步驟,圖12D表示準備透明片材之步驟。 12A to 12D are process diagrams showing a method of manufacturing a phosphor layer-sealed LED shown in Fig. 11 and a method of manufacturing an LED device using a phosphor layer-sealed LED, and Fig. 12A shows preparation of a plurality of LEDs and fluorescent light. Step of sealing the sheet, Fig. 12B shows a step of sealing a plurality of LEDs by a phosphor layer, Fig. 12C shows a step of forming a concave portion in the phosphor layer, and Fig. 12D shows a step of preparing a transparent sheet.

圖13E~圖13I係繼圖12D之後,表示圖11所示之螢光體層密封之LED之製造方法、及使用螢光體層密封之LED之LED裝置之製造方法的步驟圖,圖13E表示將透明層配置於螢光體層之上表面,繼而將第2剝離片材自透明層剝離之步驟,圖13F表示單片化成螢光體層密封之LED之步驟,圖13G表示獲得螢光體層密封之LED之步驟,圖13H表示將螢光體層密封之LED轉印至轉印片材之步驟,圖13I表示將螢光體層密封之LED安裝至基板之步驟。 13E to FIG. 13I are steps subsequent to FIG. 12D, showing a method of manufacturing the phosphor layer sealed LED shown in FIG. 11, and a method of manufacturing the LED device using the phosphor layer sealed LED, and FIG. 13E shows that it is transparent. The layer is disposed on the upper surface of the phosphor layer, and then the second release sheet is peeled off from the transparent layer. FIG. 13F shows the step of monolithizing the LED sealed by the phosphor layer, and FIG. 13G shows the LED for obtaining the phosphor layer seal. Step, FIG. 13H shows a step of transferring the phosphor layer-sealed LED to the transfer sheet, and FIG. 13I shows a step of mounting the phosphor layer-sealed LED to the substrate.

圖14A~圖14D係表示圖11所示之螢光體層密封之LED之製造方法、及使用螢光體層密封之LED之LED裝置之製造方法之變化例的步驟圖,圖14A表示準備複數個LED與螢光密封片材之步驟,圖14B表示藉由螢光體層密封複數個LED之步驟,圖14C表示將剝離片材自螢光體層剝離之步驟,圖14D表示準備透明片材之步驟。 14A to 14D are process diagrams showing a modification of the method of manufacturing the phosphor layer-sealed LED shown in Fig. 11 and a method of manufacturing the LED device using the phosphor layer-sealed LED, and Fig. 14A shows that a plurality of LEDs are prepared. In the step of sealing the sheet with the fluorescent material, FIG. 14B shows a step of sealing a plurality of LEDs by a phosphor layer, FIG. 14C shows a step of peeling off the release sheet from the phosphor layer, and FIG. 14D shows a step of preparing a transparent sheet.

圖15E~圖15H係繼圖14D之後,表示圖11所示之螢光體層密封之 LED之製造方法、及使用螢光體層密封之LED之LED裝置之製造方法之變化例的步驟圖,圖15E表示將透明層配置於螢光體層之上表面,繼而將第2剝離片材自透明層剝離之步驟,圖15F表示單片化成螢光體層密封之LED之步驟,圖15G表示獲得螢光體層密封之LED之步驟,圖15H表示將螢光體層密封之LED安裝至基板之步驟。 15E to 15H are subsequent to FIG. 14D, showing the phosphor layer seal shown in FIG. FIG. 15E shows a transparent layer disposed on the upper surface of the phosphor layer, and then the second release sheet is transparent from the surface of the method for manufacturing the LED and the method for manufacturing the LED device using the phosphor layer sealed LED. The step of layer peeling, FIG. 15F shows the step of monolithizing the LED sealed by the phosphor layer, FIG. 15G shows the step of obtaining the LED sealed by the phosphor layer, and FIG. 15H shows the step of mounting the LED sealed by the phosphor layer to the substrate.

圖16表示比較例1之螢光體層密封之LED(無透明層之態樣)的剖視圖。 Fig. 16 is a cross-sectional view showing the phosphor layer-sealed LED of Comparative Example 1 (in the absence of a transparent layer).

圖17表示比較例2之螢光體層密封之LED(雖與螢光體層形成凸緣部但無透明層之態樣)的剖視圖。 Fig. 17 is a cross-sectional view showing the phosphor layer-sealed LED of Comparative Example 2 (in the form of a flange portion formed of a phosphor layer but without a transparent layer).

本創作之被覆有螢光體層之光半導體元件具備光半導體元件、被覆光半導體元件之螢光體層、及被覆螢光體層之至少一部分之透明層。 The optical semiconductor element coated with the phosphor layer of the present invention includes an optical semiconductor element, a phosphor layer covering the photo-semiconductor element, and a transparent layer covering at least a part of the phosphor layer.

以下,藉由第1實施形態~第3實施形態,參照圖1~圖15H,對本創作之被覆有螢光體層之光半導體元件及其製造方法之一例進行說明。 Hereinafter, an optical semiconductor element coated with a phosphor layer and a method of manufacturing the same according to the first embodiment to the third embodiment will be described with reference to FIGS. 1 to 15H.

<第1實施形態> <First embodiment>

圖1中,紙面上下方向為上下方向(第1方向、厚度方向),紙面上側為上側(第1方向一側、厚度方向一側),紙面下側為下側(第1方向另一側、厚度方向另一側)。紙面左右方向為左右方向(與第1方向正交之第2方向),紙面左側為左側(第2方向一側),紙面右側為右側(第2方向另一側)。紙厚方向為前後方向(與第1方向及第2方向正交之第3方向),紙面近前側為前側(第3方向一側),紙面裏側為後側(第3方向另一側)。 In Fig. 1, the upper and lower sides of the paper are in the vertical direction (the first direction and the thickness direction), and the upper side of the paper is the upper side (the first direction side and the thickness direction side), and the lower side of the paper surface is the lower side (the first direction and the other side, The other side of the thickness direction). The left-right direction of the paper surface is the left-right direction (the second direction orthogonal to the first direction), the left side of the paper surface is the left side (the second direction side), and the right side of the paper surface is the right side (the other side in the second direction). The paper thickness direction is the front-back direction (the third direction orthogonal to the first direction and the second direction), the front side of the paper surface is the front side (the third direction side), and the back side of the paper surface is the rear side (the other side in the third direction).

[螢光體層密封之LED] [Glow-emitting layer sealed LED]

如圖1所示,作為被覆有螢光體層之光半導體元件之一例的螢光體層密封之LED1具備作為光半導體元件之一例之LED2、被覆LED2之上表面及側面之螢光體層3、及被覆螢光體層3之上表面之透明層4。 As shown in FIG. 1 , the phosphor layer sealed LED 1 as an example of an optical semiconductor element coated with a phosphor layer includes LED 2 as an example of an optical semiconductor element, and a phosphor layer 3 covering the upper surface and the side surface of the LED 2 and a coating. A transparent layer 4 on the upper surface of the phosphor layer 3.

[各構件之說明] [Description of each component]

LED2係將電能轉換為光能之光半導體元件。光半導體元件不包含與光半導體元件不同技術領域之電晶體等整流器。LED2例如形成為厚度(上下方向之最大長度)短於面方向長度(具體而言為左右方向長度及前後方向長度)之剖視大致矩形及俯視大致矩形。LED2具有下表面21、上表面22及側面23。 LED2 is an optical semiconductor component that converts electrical energy into light energy. The optical semiconductor element does not include a rectifier such as a transistor different from the optical semiconductor element. For example, the LED 2 has a thickness (the maximum length in the vertical direction) that is shorter than the surface length (specifically, the length in the left-right direction and the length in the front-rear direction), and is generally rectangular in cross section and substantially rectangular in plan view. The LED 2 has a lower surface 21, an upper surface 22, and a side surface 23.

LED2之下表面21係可與基板50接觸之元件側接觸可能面之一例。LED2之下表面21之一部分係由凸塊(未圖示)形成,且與設置於基板50之上表面之端子(未示於圖2)電性連接。LED2之下表面21為螢光體層密封之LED1之最下面。 The lower surface 21 of the LED 2 is an example of a possible side contact of the element side in contact with the substrate 50. A portion of the lower surface 21 of the LED 2 is formed of a bump (not shown) and is electrically connected to a terminal (not shown in FIG. 2) provided on the upper surface of the substrate 50. The lower surface 21 of the LED 2 is the lowermost portion of the LED 1 sealed by the phosphor layer.

LED2之上表面22為相對於LED2之下表面21於上側(一側之一例)隔開距離x而對向配置之元件側對向面之一例。再者,上述LED2之上表面22相對於下表面21於上側隔開之距離x係與LED2之厚度x相同。 The upper surface 22 of the LED 2 is an example of an element-side opposite surface that is disposed opposite to the upper surface (one of the sides) of the LED 2 by a distance x. Furthermore, the distance x between the upper surface 22 of the LED 2 and the upper surface 21 is equal to the thickness x of the LED 2.

LED2之側面23、即前面、後面、左面及右面為連結於下表面21及上表面22之元件側連結面之一例。 The side faces 23 of the LEDs 2, that is, the front, rear, left, and right sides are examples of the element-side connecting faces that are coupled to the lower surface 21 and the upper surface 22.

LED2之上表面22及側面23係由發光層(未圖示)形成。 The upper surface 22 and the side surface 23 of the LED 2 are formed of a light-emitting layer (not shown).

作為LED2,例如可列舉發出藍光之藍色LED(發光二極體元件)。 As the LED 2, for example, a blue LED (light emitting diode element) that emits blue light can be cited.

螢光體層3係將自LED2發出之藍光之一部分轉換為黃光之波長轉換層。螢光體層3於俯視時,形成為包含LED2在內之形狀。螢光體層3係以被覆LED2之上表面22及側面23,另一方面使LED2之下表面21露出之方式配置。即,於螢光體層3之下部中央形成有收容LED2之收 容部30。收容部30係自螢光體層3之下表面32朝上側凹陷之凹部,且以對應於LED2之外形形狀之方式形成。即,螢光體層3係形成為形成收容部30在內之剖視大致矩形及俯視大致矩形。螢光體層3具有下表面32、上表面31、側面33、及形成於收容部30內之內面34。 The phosphor layer 3 converts a portion of the blue light emitted from the LED 2 into a wavelength conversion layer of yellow light. The phosphor layer 3 is formed into a shape including the LED 2 in plan view. The phosphor layer 3 is disposed so as to cover the upper surface 22 and the side surface 23 of the LED 2 and expose the lower surface 21 of the LED 2. That is, the reception of the LED 2 is formed in the center of the lower portion of the phosphor layer 3. The volume 30. The accommodating portion 30 is a recess recessed from the lower surface 32 of the phosphor layer 3 toward the upper side, and is formed in a shape corresponding to the outer shape of the LED 2. In other words, the phosphor layer 3 is formed in a substantially rectangular shape in a cross-sectional view in which the accommodating portion 30 is formed, and a substantially rectangular shape in plan view. The phosphor layer 3 has a lower surface 32, an upper surface 31, side surfaces 33, and an inner surface 34 formed in the housing portion 30.

螢光體層3之下表面32為螢光體層3之最下面,並且為可與基板50接觸之螢光體側接觸可能面。 The lower surface 32 of the phosphor layer 3 is the lowermost portion of the phosphor layer 3, and is a side surface of the phosphor that can be in contact with the substrate 50.

螢光體層3之上表面31為相對於LED2之上表面22於上側(一側之一例)隔開距離y而對向配置之螢光體側第1對向面之一例。又,螢光體層3之上表面31亦為相對於LED2之上表面22於上側隔開距離y而對向配置之面。再者,於螢光體層3,上表面31相對於螢光體層3之下表面32(即LED2之上表面22)於上側隔開之距離y係螢光體層3中對向配置於LED2之上側之部分之厚度y。 The upper surface 31 of the phosphor layer 3 is an example of the first opposing surface on the phosphor side that is disposed opposite to the upper surface (one of the sides) of the LED 2 at a distance y. Further, the upper surface 31 of the phosphor layer 3 is also disposed opposite to the upper surface of the LED 2 by a distance y from the upper side. Further, in the phosphor layer 3, the upper surface 31 is spaced apart from the lower surface 32 of the phosphor layer 3 (i.e., the upper surface 22 of the LED 2) by a distance y from the upper side of the phosphor layer 3 opposite to the LED 2 The thickness y of the part.

螢光體層3之側面33、即前面、後面、左面及右面為相對於LED2之側面23於面方向(正交方向之一例)外側隔開距離α而對向配置之螢光體側第2對向面之一例。又,螢光體層3之側面33形成為朝外側露出之露出面。再者,螢光體層3之側面33相對於LED2之側面23於外側隔開之距離α係螢光體層3中對向配置於LED2之外側之部分(側部35)之左右方向長度及前後方向長度(最小長度)α。 The front side, the rear side, the left side, and the right side of the phosphor layer 3 are the second pair of the phosphor side disposed opposite to each other with respect to the side surface 23 of the LED 2 in the plane direction (one of the orthogonal directions). An example of the face. Further, the side surface 33 of the phosphor layer 3 is formed as an exposed surface that is exposed to the outside. Further, the side surface 33 of the phosphor layer 3 is spaced apart from the side surface 23 of the LED 2 by the distance α in the left-right direction and the front-rear direction of the portion (side portion 35) of the phosphor layer 3 which is disposed on the outer side of the LED 2 (opposite side 35). Length (minimum length) α.

螢光體層3之收容部30之內面34接觸於LED2之上表面22及側面23。 The inner surface 34 of the accommodating portion 30 of the phosphor layer 3 is in contact with the upper surface 22 and the side surface 23 of the LED 2.

螢光體層3例如由螢光體樹脂組合物所形成。 The phosphor layer 3 is formed, for example, of a phosphor resin composition.

螢光體樹脂組合物含有螢光體與透明樹脂組合物(作為第1透明組合物之一例之第1透明樹脂組合物)。 The phosphor resin composition contains a phosphor and a transparent resin composition (the first transparent resin composition as an example of the first transparent composition).

作為螢光體,例如可列舉:可將藍光轉換為黃光之黃色螢光體、可將藍光轉換為紅光之紅色螢光體等。 Examples of the phosphor include a yellow phosphor that converts blue light into yellow light, a red phosphor that converts blue light into red light, and the like.

作為黃色螢光體,可列舉:例如(Ba,Sr,Ca)2SiO4;Eu、 (Sr,Ba)2SiO4:Eu(正矽酸鋇(BOS))等矽酸鹽螢光體,例如Y3Al5O12:Ce(YAG(釔.鋁.石榴石):Ce)、Tb3Al3O12:Ce(TAG(鋱.鋁.石榴石):Ce)等具有石榴石型結晶結構之石榴石型螢光體,例如Ca-α-SiAlON等氮氧化物螢光體等。 Examples of the yellow phosphor include silicate phosphors such as (Ba, Sr, Ca) 2 SiO 4 ; Eu, (Sr, Ba) 2 SiO 4 : Eu (barium strontium ruthenate (BOS)), For example, Y 3 Al 5 O 12 :Ce (YAG (yt. aluminum. garnet): Ce), Tb 3 Al 3 O 12 :Ce (TAG (鋱.aluminum. garnet): Ce), etc. have garnet crystal A garnet-type phosphor of a structure, for example, an oxynitride phosphor such as Ca-α-SiAlON.

作為紅色螢光體,例如可列舉CaAlSiN3:Eu、CaSiN2:Eu等氮化物螢光體等。 Examples of the red phosphor include a nitride phosphor such as CaAlSiN 3 :Eu or CaSiN 2 :Eu.

作為螢光體之形狀,例如可列舉球狀、板狀、針狀等。就流動性之觀點而言,較佳為列舉球狀。 Examples of the shape of the phosphor include a spherical shape, a plate shape, and a needle shape. From the viewpoint of fluidity, it is preferred to enumerate a spherical shape.

螢光體之最大長度之平均值(於球狀之情形時為平均粒徑)例如為0.1μm以上,較佳為1μm以上,又,例如為200μm以下,較佳為100μm以下。 The average value of the maximum length of the phosphor (the average particle diameter in the case of a spherical shape) is, for example, 0.1 μm or more, preferably 1 μm or more, and is, for example, 200 μm or less, preferably 100 μm or less.

螢光體之比重例如超過2.0,又,例如為9.0以下。 The specific gravity of the phosphor is, for example, more than 2.0, and is, for example, 9.0 or less.

螢光體可單獨使用或併用。 The phosphors can be used alone or in combination.

螢光體之調配比率相對於透明樹脂組合物100質量份,例如為0.1質量份以上,較佳為0.5質量份以上,例如為80質量份以下,較佳為50質量份以下。又,螢光體之調配比率相對於螢光體樹脂組合物,例如為0.1質量%以上,較佳為0.5質量%以上,例如為90質量%以下,較佳為80質量%以下。 The blending ratio of the phosphor is, for example, 0.1 part by mass or more, preferably 0.5 part by mass or more, for example, 80 parts by mass or less, preferably 50 parts by mass or less, based on 100 parts by mass of the transparent resin composition. In addition, the blending ratio of the phosphor is, for example, 0.1% by mass or more, preferably 0.5% by mass or more, for example, 90% by mass or less, and preferably 80% by mass or less based on the amount of the phosphor resin composition.

透明樹脂組合物例如可列舉作為用以密封LED2之密封材所使用之透明性樹脂組合物。具體而言,作為透明樹脂組合物,例如可列舉熱硬化性樹脂組合物、熱塑性樹脂組合物,較佳為列舉熱硬化性樹脂組合物。 The transparent resin composition is, for example, a transparent resin composition used as a sealing material for sealing the LEDs 2. Specifically, examples of the transparent resin composition include a thermosetting resin composition and a thermoplastic resin composition, and a thermosetting resin composition is preferred.

作為熱硬化性樹脂組合物,例如可列舉二段反應硬化性樹脂組合物、單段反應硬化性樹脂組合物。 The thermosetting resin composition may, for example, be a two-stage reaction curable resin composition or a single-stage reaction curable resin composition.

二段反應硬化性樹脂組合物具有2個反應機制,於第1段反應中,可自A階段狀態進行B階段化(半硬化),繼而於第2段反應中,可 自B階段狀態進行C階段化(完全硬化)。即,二段反應硬化性樹脂組合物係可藉由適度之加熱條件而成為B階段狀態之熱硬化性樹脂組合物。但是,二段反應硬化性樹脂組合物亦可藉由高強度之加熱自A階段狀態一次成為C階段狀態而不維持B階段狀態。再者,B階段狀態係熱硬化性樹脂組合物處於液狀之A階段狀態與經完全硬化之C階段狀態之間之狀態,且為硬化及凝膠化略微進行,壓縮彈性模數小於C階段狀態之彈性模數之半固體或固體狀態。 The second-stage reaction-curable resin composition has two reaction mechanisms, and in the first-stage reaction, B-stage (semi-hardening) can be performed from the A-stage state, and then in the second-stage reaction, C-stage (completely hardened) from the B-stage state. In other words, the two-stage reaction curable resin composition is a thermosetting resin composition which can be in a B-stage state by moderate heating conditions. However, the two-stage reaction curable resin composition may also be in a C-stage state from the A-stage state by heating with high strength without maintaining the B-stage state. Further, the B-stage state thermosetting resin composition is in a state between a liquid A-stage state and a fully-hardened C-stage state, and is slightly hardened and gelled, and the compression elastic modulus is smaller than the C stage. The semi-solid or solid state of the elastic modulus of the state.

單段反應硬化性樹脂組合物具有1個反應機制,於第1段反應中,可自A階段狀態進行C階段化(完全硬化)。再者,單段反應硬化性樹脂組合物包含如下熱硬化性樹脂組合物,該樹脂組合物係於第1段之反應中途可停止該反應而自A階段狀態成為B階段狀態,藉由其後之進一步加熱可使第1段反應重新開始而自B階段狀態進行C階段化(完全硬化)。即,該熱硬化性樹脂組合物為可成為B階段狀態之熱硬化性樹脂組合物。另一方面,單段反應硬化性樹脂組合物包含如下熱硬化性樹脂組合物,該樹脂組合物無法加以控制而使之於1段反應中途停止、即無法成為B階段狀態,而自A階段狀態一次進行C階段化(完全硬化)。 The single-stage reaction curable resin composition has one reaction mechanism, and in the first-stage reaction, C-stage (completely hardening) can be performed from the A-stage state. In addition, the single-stage reaction curable resin composition contains a thermosetting resin composition which can be stopped in the middle of the reaction in the first stage and becomes a B-stage state from the A-stage state, and thereafter Further heating causes the first stage reaction to restart and C stage (completely hardening) from the B stage state. In other words, the thermosetting resin composition is a thermosetting resin composition which can be in a B-stage state. On the other hand, the single-stage reaction curable resin composition contains a thermosetting resin composition which cannot be controlled to be stopped in the middle of the first-stage reaction, that is, cannot be in the B-stage state, but is in the A-stage state. Perform C-stage (completely hardening) at a time.

作為透明樹脂組合物,可列舉:聚矽氧樹脂、環氧樹脂、胺基甲酸酯樹脂、聚醯亞胺樹脂、酚系樹脂、脲樹脂、三聚氰胺樹脂、不飽和聚酯樹脂等。作為透明樹脂組合物,較佳為列舉聚矽氧樹脂、環氧樹脂。 Examples of the transparent resin composition include a polyoxyxylene resin, an epoxy resin, a urethane resin, a polyimide resin, a phenol resin, a urea resin, a melamine resin, and an unsaturated polyester resin. As a transparent resin composition, a polyoxyl resin and an epoxy resin are preferable.

上述透明樹脂組合物為同種或複數種均可。 The above transparent resin composition may be the same kind or plural kinds.

作為聚矽氧樹脂,就透明性、耐久性、耐熱性、耐光性之觀點而言,例如可列舉加成反應硬化型聚矽氧樹脂組合物、縮合-加成反應硬化型聚矽氧樹脂組合物等聚矽氧樹脂組合物。聚矽氧樹脂可單獨使用或亦可併用。 Examples of the polyoxymethylene resin include an addition reaction-curable polydecane resin composition and a condensation-addition reaction-curable polyoxymethylene resin combination from the viewpoint of transparency, durability, heat resistance, and light resistance. A polyoxyxylene resin composition. The polyoxyxylene resins may be used singly or in combination.

加成反應硬化型聚矽氧樹脂組合物為單段反應硬化性樹脂組合物,例如含有含烯基之聚矽氧烷、含氫矽烷基之聚矽氧烷、及矽氫化觸媒。 The addition reaction-curable polydecane resin composition is a single-stage reaction curable resin composition, and includes, for example, an alkenyl group-containing polyoxyalkylene oxide, a hydrofluorenyl group-containing polyoxyalkylene oxide, and a rhodium hydrogenation catalyst.

含烯基之聚矽氧烷於分子內含有2個以上之烯基及/或環烯基。含烯基之聚矽氧烷具體而言以下述平均組成式(1)表示。 The alkenyl group-containing polyoxyalkylene contains two or more alkenyl groups and/or cycloalkenyl groups in the molecule. The alkenyl group-containing polyoxyalkylene is specifically represented by the following average composition formula (1).

平均組成式(1):R1 aR2 bSiO(4-a-b)/2 Average composition formula (1): R 1 a R 2 b SiO (4-ab)/2

(式中,R1表示碳數2~10之烯基及/或碳數3~10之環烯基。R2表示未經取代或經取代之碳數1~10之1價之烴基(其中,烯基及環烯基除外)。a為0.05以上且0.50以下,b為0.80以上且1.80以下) (wherein R 1 represents an alkenyl group having 2 to 10 carbon atoms and/or a cycloalkenyl group having 3 to 10 carbon atoms. R 2 represents an unsubstituted or substituted hydrocarbon group having 1 to 10 carbon atoms (wherein Except for alkenyl and cycloalkenyl). a is 0.05 or more and 0.50 or less, and b is 0.80 or more and 1.80 or less.

式(1)中,作為R1所表示之烯基,例如可列舉:乙烯基、烯丙基、丙烯基、丁烯基、戊烯基、己烯基、庚烯基、辛烯基等碳數2~10之烯基。作為R1所表示之環烯基,例如可列舉:環己烯基、降烯基等碳數3~10之環烯基。 In the formula (1), examples of the alkenyl group represented by R 1 include a carbon such as a vinyl group, an allyl group, a propenyl group, a butenyl group, a pentenyl group, a hexenyl group, a heptenyl group or an octenyl group. A few 2 to 10 alkenyl groups. Examples of the cycloalkenyl group represented by R 1 include a cyclohexenyl group and a lower ratio . A cycloalkenyl group having 3 to 10 carbon atoms such as an alkenyl group.

作為R1,較佳為列舉烯基,更佳為列舉碳數2~4之烯基,進而較佳為列舉乙烯基。 R 1 is preferably an alkenyl group, more preferably an alkenyl group having 2 to 4 carbon atoms, and still more preferably a vinyl group.

R1所表示之烯基為同種或複數種均可。 The alkenyl group represented by R 1 may be the same kind or plural kinds.

R2所表示之1價之烴基為除烯基及環烯基以外之未經取代或經取代之碳原子數1~10之1價之烴基。 The monovalent hydrocarbon group represented by R 2 is an unsubstituted or substituted hydrocarbon group having 1 to 10 carbon atoms in addition to an alkenyl group and a cycloalkenyl group.

作為未經取代之1價之烴基,可列舉:例如甲基、乙基、丙基、異丙基、丁基、異丁基、第二丁基、第三丁基、戊基、己基、戊基、庚基、辛基、2-乙基己基、壬基、癸基等碳數1~10之烷基,例如環丙基、環丁基、環戊基、環己基等碳數3~6之環烷基,例如苯基、甲苯基、萘基等碳數6~10之芳基,例如苄基、苄基乙基等碳數7~8之芳烷基。較佳為列舉碳數1~3之烷基、碳數6~10之芳基,更佳為列舉甲基及/或苯基。 The unsubstituted monovalent hydrocarbon group may, for example, be a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a second butyl group, a third butyl group, a pentyl group, a hexyl group or a pentyl group. a carbon number of 1 to 10, such as a cyclopropyl group, a cyclobutyl group, a cyclopentyl group or a cyclohexyl group, such as a cyclopropyl group, a cyclobutyl group, a cyclopentyl group or a cyclohexyl group, such as a cyclopropyl group, a hexyl group, an octyl group, a 2-ethylhexyl group, a decyl group or a fluorenyl group The cycloalkyl group is an aryl group having 6 to 10 carbon atoms such as a phenyl group, a tolyl group or a naphthyl group, and an aralkyl group having 7 to 8 carbon atoms such as a benzyl group or a benzylethyl group. The alkyl group having 1 to 3 carbon atoms and the aryl group having 6 to 10 carbon atoms are preferred, and a methyl group and/or a phenyl group are more preferred.

另一方面,經取代之1價之烴基可列舉上述未經取代之1價烴基中之氫原子被取代基取代而得者。 On the other hand, the substituted monovalent hydrocarbon group may be one obtained by substituting a hydrogen atom in the above unsubstituted monovalent hydrocarbon group with a substituent.

作為取代基,可列舉:例如氯原子等鹵素原子,例如縮水甘油醚基等。 The substituent may, for example, be a halogen atom such as a chlorine atom, for example, a glycidyl ether group.

作為經取代之1價之烴基,具體而言,可列舉:3-氯丙基、縮水甘油氧基丙基等。 Specific examples of the substituted monovalent hydrocarbon group include 3-chloropropyl group and glycidoxypropyl group.

1價之烴基可為未經取代及經取代均可,較佳為未經取代。 The monovalent hydrocarbon group may be unsubstituted or substituted, and is preferably unsubstituted.

R2所表示之1價之烴基為同種或複數種。較佳為列舉甲基及/或苯基,更佳為列舉甲基及苯基之併用。 The monovalent hydrocarbon group represented by R 2 is the same or plural. It is preferably a methyl group and/or a phenyl group, and more preferably a combination of a methyl group and a phenyl group.

a較佳為0.10以上且0.40以下。 a is preferably 0.10 or more and 0.40 or less.

b較佳為1.5以上且1.75以下。 b is preferably 1.5 or more and 1.75 or less.

含烯基之聚矽氧烷之重量平均分子量例如為100以上,較佳為500以上,又,例如為10000以下,較佳為5000以下。含烯基之聚矽氧烷之重量平均分子量係藉由凝膠滲透層析法進行測定之基於標準聚苯乙烯之換算值。 The weight average molecular weight of the alkenyl group-containing polyoxyalkylene is, for example, 100 or more, preferably 500 or more, and for example, 10,000 or less, preferably 5,000 or less. The weight average molecular weight of the alkenyl group-containing polyoxyalkylene is a standard polystyrene-based conversion value determined by gel permeation chromatography.

含烯基之聚矽氧烷係藉由適宜之方法而製備,又,亦可使用市售品。 The alkenyl group-containing polyoxyalkylene is prepared by a suitable method, and a commercially available product can also be used.

又,含烯基之聚矽氧烷為同種或複數種。 Further, the alkenyl group-containing polyoxane is the same kind or plural kinds.

含氫矽烷基之聚矽氧烷例如於分子內含有2個以上之氫矽烷基(SiH基)。含氫矽烷基之聚矽氧烷具體而言係以下述平均組成式(2)表示。 The polyoxyalkylene group containing a hydroquinone group contains, for example, two or more hydrofluorenyl groups (SiH groups) in the molecule. The polyoxyalkylene group containing a hydroquinone group is specifically represented by the following average composition formula (2).

平均組成式(2):HcR3 dSiO(4-c-d)/2 Average composition formula (2): H c R 3 d SiO (4-cd)/2

(式中,R3表示未經取代或經取代之碳數1~10之1價之烴基(其中,烯基及/或環烯基除外)。c為0.30以上且1.0以下,d為0.90以上且2.0以下) (wherein R 3 represents an unsubstituted or substituted hydrocarbon group having 1 to 10 carbon atoms (excluding an alkenyl group and/or a cycloalkenyl group). c is 0.30 or more and 1.0 or less, and d is 0.90 or more. And 2.0 or less)

式(2)中,R3所表示之未經取代或經取代之碳數1~10之1價之烴基可例示與式(1)之R2所表示之未經取代或經取代之碳數1~10之1價之烴基相同者。較佳為列舉未經取代之碳數1~10之1價之烴基,更佳為列舉碳數1~10之烷基、碳數6~10之芳基,進而較佳為列舉甲基及/或苯基。 In the formula (2), the unsubstituted or substituted hydrocarbon group having 1 to 10 carbon atoms represented by R 3 may be exemplified by the unsubstituted or substituted carbon number represented by R 2 of the formula (1). The hydrocarbon groups of 1 to 10 are the same. Preferably, the unsubstituted hydrocarbon group having 1 to 10 carbon atoms is used, and more preferably an alkyl group having 1 to 10 carbon atoms or an aryl group having 6 to 10 carbon atoms, more preferably a methyl group and/or Or phenyl.

c較佳為0.5以下。 c is preferably 0.5 or less.

d較佳為1.3以上且1.7以下。 d is preferably 1.3 or more and 1.7 or less.

含氫矽烷基之聚矽氧烷之重量平均分子量例如為100以上,較佳為500以上,又,例如為10000以下,較佳為5000以下。含氫矽烷基之聚矽氧烷之重量平均分子量係藉由凝膠滲透層析法進行測定之基於標準聚苯乙烯之換算值。 The polyalkylene oxide-containing polyoxyalkylene has a weight average molecular weight of, for example, 100 or more, preferably 500 or more, and further, for example, 10,000 or less, preferably 5,000 or less. The weight average molecular weight of the polyalkylene oxide-containing polyoxyalkylene is a standard polystyrene-based conversion value determined by gel permeation chromatography.

含氫矽烷基之聚矽氧烷可藉由適宜之方法而製備,又,亦可使用市售品。 The polyoxyalkylene group containing a hydroquinone group can be produced by a suitable method, and a commercially available product can also be used.

又,含氫矽烷基之聚矽氧烷為同種或複數種。 Further, the polyoxyalkylene group containing a hydroquinone group is the same kind or plural kinds.

上述平均組成式(1)及平均組成式(2)中R2及R3中之至少任一烴基較佳為包含苯基,更佳為R2及R3兩者之烴基均包含苯基。再者,於R2及R3中之至少任一烴基包含苯基之情形時,將加成反應硬化型聚矽氧樹脂組合物設為苯基系聚矽氧樹脂組合物。該苯基系聚矽氧樹脂組合物為可成為B階段狀態之單段反應硬化性樹脂組合物。苯基系聚矽氧樹脂組合物之折射率例如為1.45以上,進而為1.50以上。 The above average composition formula (1) and at least one of R 2 and R 3 in the average composition formula (2) preferably contain a phenyl group, and more preferably both of the hydrocarbon groups of R 2 and R 3 contain a phenyl group. In the case where at least one of R 2 and R 3 contains a phenyl group, the addition reaction-curable polydecane resin composition is a phenyl-based polyoxymethylene resin composition. The phenyl polyoxyethylene resin composition is a single-stage reaction curable resin composition which can be in a B-stage state. The refractive index of the phenyl polyoxyethylene resin composition is, for example, 1.45 or more, and further 1.50 or more.

另一方面,於R2及R3之兩者之烴為甲基之情形時,將加成反應硬化型聚矽氧樹脂組合物設為甲基系聚矽氧樹脂組合物。甲基系聚矽氧樹脂組合物為無法成為B階段狀態之單段反應硬化性樹脂組合物。甲基系聚矽氧樹脂組合物之折射率例如為1.50以下,進而為1.45以下。 On the other hand, when the hydrocarbon of both of R 2 and R 3 is a methyl group, the addition reaction-curable polydecane resin composition is a methyl-based polyoxymethylene resin composition. The methyl polyoxy resin composition is a single-stage reaction curable resin composition which cannot be in a B-stage state. The refractive index of the methyl polyoxy resin composition is, for example, 1.50 or less, and further 1.45 or less.

於加成反應硬化型聚矽氧樹脂組合物之中,就獲得優異之氣體透過率之觀點而言,較佳為列舉甲基系聚矽氧樹脂組合物。 Among the addition reaction-curable polydecane resin compositions, a methyl-based polyoxymethylene resin composition is preferred from the viewpoint of obtaining an excellent gas permeability.

關於含氫矽烷基之聚矽氧烷之調配比率,以使含烯基之聚矽氧烷之烯基及環烯基之莫耳數相對於含氫矽烷基之聚矽氧烷之氫矽烷基之莫耳數的比率(烯基及環烯基之莫耳數/氫矽烷基之莫耳數)例如成為1/30以上、較佳為成為1/3以上,又,例如成為30/1以下、較佳為成為3/1以下之方式進行調整。 a compounding ratio of a polyoxyalkylene group containing a hydroquinone group such that the number of moles of the alkenyl group and the cycloalkenyl group of the alkenyl group-containing polyoxyalkylene is compared with the hydroquinone group of the polyoxyalkylene group containing a hydroquinone group The ratio of the molar number (the number of moles of the alkenyl group and the cycloalkenyl group / the number of moles of the hydroquinone group) is, for example, 1/30 or more, preferably 1/3 or more, and is, for example, 30/1 or less. Preferably, it is adjusted to be 3/1 or less.

矽氫化觸媒只要為使含烯基之聚矽氧烷之烯基及/或環烯基與含氫矽烷基之聚矽氧烷之氫矽烷基之矽氫化反應(矽氫化加成)之反應速度提高之物質(加成觸媒),則並無特別限定,例如可列舉金屬觸媒。作為金屬觸媒,可列舉:例如鉑黑、氯化鉑、氯鉑酸、鉑-烯烴錯合物、鉑-羰基錯合物、鉑-乙醯乙酸酯等鉑觸媒,例如鈀觸媒,例如銠觸媒等。 The hydrogenation catalyst of hydrazine is a hydrogenation reaction (hydrogenation addition) of an alkenyl group and/or a cycloalkenyl group of an alkenyl group-containing polyoxyalkylene with a hydroquinone group of a polyoxyalkylene group containing a hydroquinone group. The substance (addition catalyst) having a high speed is not particularly limited, and examples thereof include a metal catalyst. Examples of the metal catalyst include platinum catalysts such as platinum black, platinum chloride, chloroplatinic acid, platinum-olefin complex, platinum-carbonyl complex, and platinum-acetonitrile acetate, for example, palladium catalyst. , for example, a catalyst.

矽氫化觸媒之調配比率以金屬觸媒之金屬量(具體而言為金屬原子)而言,相對於含烯基之聚矽氧烷及含氫矽烷基之聚矽氧烷,以質量基準計,例如1.0ppm以上,又,例如為10000ppm以下,較佳為1000ppm以下,更佳為500ppm以下。 The ratio of the hydrogenation catalyst to the hydrogenation catalyst is based on the amount of the metal of the metal catalyst (specifically, the metal atom), based on the mass ratio of the alkenyl group-containing polyoxane and the hydroquinone-containing polyoxyalkylene. For example, it is 1.0 ppm or more, and is, for example, 10000 ppm or less, preferably 1000 ppm or less, more preferably 500 ppm or less.

加成反應硬化型聚矽氧樹脂組合物係藉由以上述比率調配含烯基之聚矽氧烷、含氫矽烷基之聚矽氧烷及矽氫化觸媒而製備。 The addition reaction hardening type polyoxyxylene resin composition is prepared by blending an alkenyl group-containing polyoxyalkylene oxide, a hydrofluorenyl group-containing polyoxyalkylene oxide, and a hydrazine hydrogenation catalyst in the above ratio.

上述加成反應硬化型聚矽氧樹脂組合物藉由調配含烯基之聚矽氧烷、含氫矽烷基之聚矽氧烷及矽氫化觸媒,而製備為A階段(液體)狀態並使用。 The addition reaction hardening type polyoxyxylene resin composition is prepared into an A-stage (liquid) state by using an alkenyl group-containing polyoxyalkylene oxide, a hydroquinone-containing polyoxyalkylene oxide, and a hydrazine hydrogenation catalyst. .

如上所述,苯基系聚矽氧樹脂組合物藉由所需條件之加熱而產生含烯基之聚矽氧烷之烯基及/或環烯基與含氫矽烷基之聚矽氧烷之氫矽烷基之矽氫化加成反應,其後使矽氫化加成反應暫時停止。藉此,可自A階段狀態成為B階段(半硬化)狀態。其後,藉由所需條件之進一步加熱,使上述矽氫化加成反應重新開始,從而結束反應。藉此,可自B階段狀態成為C階段(完全硬化)狀態。 As described above, the phenyl-based polyoxyxene resin composition generates an alkenyl group and/or a cycloalkenyl group of an alkenyl group-containing polyoxyalkylene and a polyoxyalkylene group containing a hydroquinone group by heating under a desired condition. The hydroquinone alkylation reaction of the hydroquinone is carried out, after which the hydrogenation addition reaction of the hydrazine is temporarily stopped. Thereby, it is possible to change from the A-stage state to the B-stage (semi-hardened) state. Thereafter, the above hydrogenation addition reaction is restarted by further heating under the desired conditions to terminate the reaction. Thereby, it is possible to change from the B-stage state to the C-stage (completely hardened) state.

再者,苯基系聚矽氧樹脂組合物處於B階段(半硬化)狀態時為固體狀。並且,該B階段狀態之苯基系聚矽氧樹脂組合物可兼有熱塑性及熱硬化性。即,B階段之苯基系聚矽氧樹脂組合物藉由加熱而暫時塑化後,進行完全硬化。 Further, when the phenyl-based polyoxyxene resin composition is in the B-stage (semi-hardened) state, it is solid. Further, the phenyl-based polyoxyxene resin composition in the B-stage state can have both thermoplasticity and thermosetting properties. That is, the B-stage phenyl-based polyoxyxene resin composition is temporarily plasticized by heating, and then completely cured.

另一方面,於上述甲基系聚矽氧樹脂組合物中,產生烯基及/或環烯基與氫矽烷基之矽氫化加成反應,不使反應停止而促進反應,從而使反應結束。藉此,可自A階段狀態成為C階段(完全硬化)狀態。甲基系聚矽氧樹脂組合物可使用市售品。作為市售品,例如可列舉ELASTOSIL系列(Wacker Asahikasei Silicone公司製造,具體而言為ELASTOSIL LR7665等甲基系聚矽氧樹脂組合物)、KER系列(Shin-Etsu Silicones公司製造)等。 On the other hand, in the methyl polyoxyphthalocene resin composition, a hydrogenation addition reaction of an alkenyl group and/or a cycloalkenyl group with a hydroquinone group is generated, and the reaction is accelerated without stopping the reaction, thereby completing the reaction. Thereby, it is possible to change from the A-stage state to the C-stage (completely hardened) state. A commercially available product can be used as the methyl polyoxy resin composition. For example, the ELASTOSIL series (manufactured by Wacker Asahikasei Silicone Co., Ltd., specifically, a methyl polyoxyl resin composition such as ELASTOSIL LR7665), the KER series (manufactured by Shin-Etsu Silicones Co., Ltd.), and the like can be mentioned.

縮合-加成反應硬化型聚矽氧樹脂組合物為二段反應硬化性樹脂,具體而言,可列舉:例如日本專利特開2010-265436號公報、日本專利特開2013-187227號公報等中記載之第1~第8縮合-加成反應硬化型聚矽氧樹脂組合物,例如日本專利特開2013-091705號公報、日本專利特開2013-001815號公報、日本專利特開2013-001814號公報、日本專利特開2013-001813號公報、日本專利特開2012-102167號公報等中記載之含有籠型八倍半矽氧烷之聚矽氧樹脂組合物等。再者,縮合-加成反應硬化型聚矽氧樹脂組合物為固體狀,且兼有熱塑性及熱硬化性。 The condensing-addition-reaction-hardening type of the polyoxymethylene resin composition is a two-stage reaction-curable resin, and, for example, JP-A-2010-265436, JP-A-2013-187227, and the like are mentioned. In the first to eighth condensation-addition reaction-curing type polyoxyxylene resin compositions, for example, Japanese Patent Laid-Open Publication No. 2013-091705, Japanese Patent Laid-Open No. 2013-001815, and Japanese Patent Laid-Open No. 2013-001814 A polyfluorene oxide resin composition containing a cage-type sesquioxaxane described in Japanese Laid-Open Patent Publication No. 2012-102167, and the like. Further, the condensation-addition reaction-curable polydecane resin composition is solid and has both thermoplasticity and thermosetting properties.

作為環氧樹脂,可列舉:例如雙酚型環氧樹脂(例如雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、氫化雙酚A型環氧樹脂、二聚酸改性雙酚型環氧樹脂等)、酚醛清漆型環氧樹脂(例如酚系酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂等)、萘型環氧樹脂、茀型環氧樹脂(例如雙芳基茀型環氧樹脂等)、三苯基甲烷型環氧樹脂(例如三羥基苯基甲烷型環氧樹脂等)等芳香族系 環氧樹脂,例如三環氧丙基異氰尿酸酯(異氰尿酸三縮水甘油酯)、乙內醯脲環氧樹脂等含氮環環氧樹脂,例如脂肪族系環氧樹脂,例如脂環式環氧樹脂(例如二環戊二烯型環氧樹脂等二環環型環氧樹脂等),例如縮水甘油醚型環氧樹脂,例如縮水甘油胺型環氧樹脂等。又,作為環氧樹脂,例如可列舉鄰苯二甲酸、四氫鄰苯二甲酸、六氫鄰苯二甲酸、甲基四氫鄰苯二甲酸、耐地酸、甲基耐地酸等二羧酸之二縮水甘油酯等。進而,作為環氧樹脂,亦可列舉:具有芳香環經氫化之脂環式結構之核氫化偏苯三甲酸、核氫化均苯四甲酸等之縮水甘油酯等。 Examples of the epoxy resin include bisphenol type epoxy resins (for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, hydrogenated bisphenol A type epoxy resin, Dimer acid-modified bisphenol epoxy resin, etc., novolak-type epoxy resin (for example, phenolic novolak type epoxy resin, cresol novolak type epoxy resin, biphenyl type epoxy resin, etc.), naphthalene An aromatic type such as an epoxy resin, a fluorene type epoxy resin (for example, a bisaryl fluorene type epoxy resin), or a triphenylmethane type epoxy resin (for example, a trishydroxyphenylmethane type epoxy resin) Epoxy resin, such as trisepoxypropyl isocyanurate (triglycidyl isocyanurate), nitrogen-containing epoxy resin such as carbendazole epoxy resin, such as aliphatic epoxy resin, such as grease A ring-type epoxy resin (for example, a bicyclic ring type epoxy resin such as a dicyclopentadiene type epoxy resin), for example, a glycidyl ether type epoxy resin, for example, a glycidylamine type epoxy resin. Further, examples of the epoxy resin include dicarboxylic acid such as phthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid, methyltetrahydrophthalic acid, ceric acid, and methyl acid. Diglycidyl acid and the like. Further, examples of the epoxy resin include a hydrogenated trimellitic acid having an alicyclic structure in which an aromatic ring is hydrogenated, a glycidyl ester such as nuclear hydrogenated pyromellitic acid, and the like.

環氧樹脂可單獨使用或併用。 The epoxy resins may be used singly or in combination.

環氧樹脂可為液狀、半固體狀及固體狀中之任一形態。環氧樹脂之平均環氧當量例如為90~1000。於環氧樹脂為固體狀之情形時,就操作之方便性之觀點而言,例如軟化點為50~160℃。 The epoxy resin may be in any form of a liquid, a semi-solid or a solid. The epoxy equivalent of the epoxy resin is, for example, 90 to 1000. When the epoxy resin is in the form of a solid, the softening point is, for example, 50 to 160 ° C from the viewpoint of ease of handling.

環氧樹脂通常與硬化劑併用。作為硬化劑,例如可列舉酸酐系硬化劑、異三聚氰酸衍生物系硬化劑等。 Epoxy resins are usually used in combination with a hardener. Examples of the curing agent include an acid anhydride-based curing agent and a meta-cyanuric acid derivative-based curing agent.

作為酸酐系硬化劑,例如可列舉:鄰苯二甲酸酐、順丁烯二酸酐、偏苯三甲酸酐、均苯四甲酸酐、六氫鄰苯二甲酸酐、四氫鄰苯二甲酸酐、甲基耐地酸酐、耐地酸酐、戊二酸酐、甲基六氫鄰苯二甲酸酐、甲基四氫鄰苯二甲酸酐等。酸酐系硬化劑可單獨使用或併用2種以上。 Examples of the acid anhydride-based curing agent include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, and A. A phthalic anhydride, an acid anhydride, glutaric anhydride, methylhexahydrophthalic anhydride, methyltetrahydrophthalic anhydride or the like. The acid anhydride-based curing agent may be used alone or in combination of two or more.

作為異三聚氰酸衍生物系硬化劑,例如可列舉:異氰尿酸1,3,5-三(1-羧基甲基)酯、異氰尿酸1,3,5-三(2-羧基乙基)酯、異氰尿酸1,3,5-三(3-羧基丙基)酯、異氰尿酸1,3-雙(2-羧基乙基)酯等。異三聚氰酸衍生物系硬化劑可單獨使用或併用2種以上。 Examples of the isocyanuric acid derivative-based curing agent include 1,3,5-tris(1-carboxymethyl) isocyanurate and 1,3,5-tris(2-carboxyl). Ester), 1,3,5-tris(3-carboxypropyl) isocyanurate, 1,3-bis(2-carboxyethyl) isocyanurate, and the like. The isocyanuric acid derivative-based curing agent may be used singly or in combination of two or more.

硬化劑可單獨使用或併用2種以上。 The hardener may be used singly or in combination of two or more.

環氧樹脂與硬化劑之調配比率例如以相對於環氧樹脂中之環氧 基1當量,硬化劑中之可與環氧基反應之活性基(酸酐基或羧基)成為0.5~1.5當量之方式進行設定,較佳為成為0.7~1.2當量之方式進行設定。 The ratio of the epoxy resin to the hardener is, for example, relative to the epoxy in the epoxy resin. The amount of the base is 1 equivalent, and the active group (anhydride group or carboxyl group) which can react with the epoxy group is set to be 0.5 to 1.5 equivalents, preferably 0.7 to 1.2 equivalents.

又,透明樹脂組合物可進而含有填料。 Further, the transparent resin composition may further contain a filler.

作為填料,可列舉:無機粒子、有機粒子等粒子。 Examples of the filler include particles such as inorganic particles and organic particles.

作為無機粒子,可列舉:例如二氧化矽(SiO2)、滑石(Mg3(Si4O10)(HO)2)、氧化鋁(Al2O3)、氧化硼(B2O3)、氧化鈣(CaO)、氧化鋅(ZnO)、氧化鍶(SrO)、氧化鎂(MgO)、氧化鋯(ZrO2)、氧化鋇(BaO)、氧化銻(Sb2O3)等氧化物,例如氮化鋁(AlN)、氮化矽(Si3N4)等氮化物等無機物粒子(無機物)。又,作為無機粒子,例如可列舉由上述例示之無機物所製備之複合無機物粒子,較佳為由氧化物製備之複合無機氧化物粒子(具體而言為玻璃粒子等)。 Examples of the inorganic particles include cerium oxide (SiO 2 ), talc (Mg 3 (Si 4 O 10 ) (HO) 2 ), alumina (Al 2 O 3 ), and boron oxide (B 2 O 3 ). Oxides such as calcium oxide (CaO), zinc oxide (ZnO), strontium oxide (SrO), magnesium oxide (MgO), zirconium oxide (ZrO 2 ), barium oxide (BaO), and barium oxide (Sb 2 O 3 ), for example Inorganic particles (inorganic matter) such as nitrides such as aluminum nitride (AlN) or tantalum nitride (Si 3 N 4 ). Further, examples of the inorganic particles include composite inorganic particles prepared from the above-exemplified inorganic materials, and composite inorganic oxide particles (specifically, glass particles or the like) prepared from an oxide are preferable.

作為複合無機氧化物粒子,例如含有二氧化矽、或二氧化矽及氧化硼作為主成分,又,含有氧化鋁、氧化鈣、氧化鋅、氧化鍶、氧化鎂、氧化鋯、氧化鋇、氧化銻等作為副成分。複合無機氧化物粒子中之主成分之含有比率相對於複合無機氧化物粒子,例如超過40質量%,較佳為50質量%以上,又,例如為90質量%以下,較佳為80質量%以下。副成分之含有比率為上述主成分之含有比率之剩餘部分。 The composite inorganic oxide particles contain, for example, cerium oxide, or cerium oxide and boron oxide as main components, and further contain aluminum oxide, calcium oxide, zinc oxide, cerium oxide, magnesium oxide, zirconium oxide, cerium oxide, cerium oxide. Etc. as an auxiliary component. The content ratio of the main component in the composite inorganic oxide particles is, for example, more than 40% by mass, preferably 50% by mass or more, and further, for example, 90% by mass or less, preferably 80% by mass or less, based on the composite inorganic oxide particles. . The content ratio of the subcomponent is the remainder of the content ratio of the above main component.

複合氧化物粒子可調配上述主成分及副成分並進行加熱而使該等熔融,將其等之熔融物急速冷卻,其後例如藉由球磨機等進行粉碎,其後視需要實施適當之表面加工(具體而言為球體化等)而獲得。 The composite oxide particles may be blended with the above-mentioned main component and subcomponent, heated, and melted, and the melts thereof may be rapidly cooled, and then pulverized by, for example, a ball mill or the like, and then subjected to appropriate surface processing as needed ( Specifically, it is obtained by spheroidization or the like.

無機粒子可單獨使用或併用。 The inorganic particles may be used singly or in combination.

作為有機粒子之有機材料,例如可列舉丙烯酸系樹脂、苯乙烯系樹脂、丙烯酸-苯乙烯系樹脂、聚矽氧系樹脂、聚碳酸酯系樹脂、苯胍胺系樹脂、聚烯烴系樹脂、聚酯系樹脂、聚醯胺系樹脂、聚醯亞胺系樹脂等。該等可單獨使用或併用。 Examples of the organic material of the organic particles include an acrylic resin, a styrene resin, an acrylic-styrene resin, a polyoxyn resin, a polycarbonate resin, a benzoguanamine resin, a polyolefin resin, and a poly An ester resin, a polyamine resin, a polyimide resin, or the like. These may be used alone or in combination.

此種有機材料之中,就光擴散性、獲取性之觀點而言,較佳為列舉聚矽氧系樹脂。 Among such organic materials, from the viewpoint of light diffusibility and availability, a polyfluorene-based resin is preferred.

有機粒子可單獨使用或併用。 The organic particles may be used singly or in combination.

填料可單獨使用或併用。 The fillers may be used singly or in combination.

填料之折射率例如為1.40以上,又,例如為1.600以下。 The refractive index of the filler is, for example, 1.40 or more, and is, for example, 1.600 or less.

填料之形狀並無特別限定,例如可列舉球狀、板狀、針狀等。就流動性之觀點而言,較佳為列舉球狀。 The shape of the filler is not particularly limited, and examples thereof include a spherical shape, a plate shape, and a needle shape. From the viewpoint of fluidity, it is preferred to enumerate a spherical shape.

填料之平均粒徑例如為3μm以上,較佳為5μm以上,又,例如為70μm以下,較佳為50μm以下。 The average particle diameter of the filler is, for example, 3 μm or more, preferably 5 μm or more, and for example, 70 μm or less, preferably 50 μm or less.

填料之含有比率相對於透明樹脂組合物,例如為1質量%以上,較佳為3質量%以上,又,例如為80質量%以下,較佳為75質量%以下。 The content ratio of the filler is, for example, 1% by mass or more, preferably 3% by mass or more, and for example, 80% by mass or less, preferably 75% by mass or less, based on the amount of the transparent resin composition.

透明樹脂組合物(第1透明組合物之一例)之折射率RIp例如為1.40以上,較佳為1.45以上,較佳為1.50以上,又,例如為1.63以下,較佳為1.60以下,更佳為1.57以下。若透明樹脂組合物之折射率RIp為上述下限以上,則可使螢光體層密封之LED1之發光強度提高。 The refractive index RIp of the transparent resin composition (an example of the first transparent composition) is, for example, 1.40 or more, preferably 1.45 or more, preferably 1.50 or more, and further preferably 1.63 or less, preferably 1.60 or less, more preferably 1.57 or less. When the refractive index RIp of the transparent resin composition is at least the above lower limit, the luminous intensity of the LED 1 sealed by the phosphor layer can be improved.

透明樹脂組合物之折射率RIp係藉由阿貝折射率計而算出。再者,於透明樹脂組合物包含熱硬化性樹脂之情形時,作為硬化狀態(完全硬化狀態)之折射率而算出。再者,硬化前之透明樹脂組合物之折射率與硬化後之透明樹脂組合物之折射率實質上相同。 The refractive index RIp of the transparent resin composition was calculated by an Abbe refractometer. In the case where the transparent resin composition contains a thermosetting resin, it is calculated as the refractive index in the cured state (completely cured state). Further, the refractive index of the transparent resin composition before curing is substantially the same as the refractive index of the cured transparent resin composition.

再者,於螢光體樹脂組合物中可視需要以適當之比率添加矽烷偶合劑、抗老化劑、改性劑、界面活性劑、染料、顏料(上述填料除外)、變色防止劑、紫外線吸收劑等公知之添加物。 Further, a decane coupling agent, an anti-aging agent, a modifier, a surfactant, a dye, a pigment (excluding the above filler), a discoloration preventive agent, and an ultraviolet absorber may be added to the phosphor resin composition as needed. And other known additives.

如圖1所示,透明層4為螢光體層密封之LED1之最上層。具體而言,透明層4係以被覆螢光體層3之螢光體側第1對向面31整個面之方式配置。透明層4之俯視形狀係形成為與螢光體層3之螢光體側第1對 向面31之形狀相同。即,透明層4形成為剖視大致矩形及俯視大致矩形。透明層4具有下表面41、上表面42及側面43。 As shown in FIG. 1, the transparent layer 4 is the uppermost layer of the LED 1 sealed by the phosphor layer. Specifically, the transparent layer 4 is disposed so as to cover the entire surface of the first opposing surface 31 on the phosphor side of the phosphor layer 3 . The planar shape of the transparent layer 4 is formed to be the first pair with the phosphor side of the phosphor layer 3. The shape of the face 31 is the same. That is, the transparent layer 4 is formed in a substantially rectangular shape in cross section and a substantially rectangular shape in plan view. The transparent layer 4 has a lower surface 41, an upper surface 42, and a side surface 43.

透明層4之下表面41係與螢光體側第1對向面31接觸之透明側接觸面。 The lower surface 41 of the transparent layer 4 is a transparent side contact surface that is in contact with the first opposite surface 31 on the phosphor side.

透明層4之上表面42為相對於螢光體層3之上表面31於上側(一側之一例)隔開距離z而對向配置之透明側對向面之一例。透明層4之上表面42為螢光體層密封之LED1之最上面。透明層4之上表面42相對於螢光體層3之上表面31於上側隔開之距離z與透明層4之厚度z相同。 The upper surface 42 of the transparent layer 4 is an example of a transparent side opposing surface which is disposed opposite to the upper side (one of the sides) of the phosphor layer 3 by a distance z. The upper surface 42 of the transparent layer 4 is the uppermost surface of the LED 1 sealed by the phosphor layer. The distance d between the upper surface 42 of the transparent layer 4 and the upper surface 31 of the phosphor layer 3 is the same as the thickness z of the transparent layer 4.

透明層4之側面43連結於透明層4之下表面41及上表面42。透明層4之側面43為於上下方向(一方向之一例)投影時,相對於LED2之側面23於面方向(正交方向之一例)外側隔開間隔α而配置之透明側連結面之一例。透明層4之側面43於上下方向與螢光體層3之側面33形成為同一面。 The side surface 43 of the transparent layer 4 is joined to the lower surface 41 and the upper surface 42 of the transparent layer 4. The side surface 43 of the transparent layer 4 is an example of a transparent side connecting surface which is disposed at an interval α outside the surface direction (an example of the orthogonal direction) with respect to the side surface 23 of the LED 2 when projected in the vertical direction (in one direction). The side surface 43 of the transparent layer 4 is formed in the same plane as the side surface 33 of the phosphor layer 3 in the vertical direction.

透明層4例如由透明樹脂組合物、無機物等第2透明組合物所形成。 The transparent layer 4 is formed, for example, from a second transparent composition such as a transparent resin composition or an inorganic material.

作為透明樹脂組合物,例如可列舉上述透明樹脂組合物(螢光體樹脂組合物所含有之透明樹脂組合物)。透明樹脂組合物所包含之各成分及其等之調配比率係與透明樹脂組合物(螢光體樹脂組合物所含有之透明樹脂組合物)所包含之各成分及其等之調配比率重複之範圍。 The transparent resin composition (the transparent resin composition contained in the phosphor resin composition) is exemplified as the transparent resin composition. The blending ratio of each component and the like contained in the transparent resin composition and the blending ratio of each component contained in the transparent resin composition (the transparent resin composition contained in the phosphor resin composition) and the like .

作為無機物,可列舉玻璃等。作為玻璃,並無特別限定,例如可列舉無鹼玻璃、鈉玻璃、石英玻璃、硼矽酸玻璃、鉛玻璃、氟化物玻璃等。又,作為玻璃,亦可列舉耐熱玻璃,具體而言,以商品名作為Tempax Glass、維柯玻璃(vycor glass)、派熱司玻璃(Pyrex glass)等所市售者。作為玻璃,較佳為列舉無鹼玻璃、鈉玻璃。 Examples of the inorganic material include glass and the like. The glass is not particularly limited, and examples thereof include alkali-free glass, soda glass, quartz glass, borosilicate glass, lead glass, and fluoride glass. Further, examples of the glass include heat-resistant glass, and specifically, those sold under the trade names of Tempax Glass, vycor glass, and Pyrex glass. As the glass, an alkali-free glass or a soda glass is preferable.

第2透明組合物之折射率RIt係以使自第1透明樹脂組合物(螢光體 層3所包含之透明樹脂組合物)之折射率RIp減去第2透明組合物之折射率RIt所得之值(RIp-RIt)例如成為-1.0以上、較佳為成為-0.7以上、更佳為成為0以上、進而較佳為成為0.05以上、尤佳為成為0.10以上之方式,又,例如為成為0.20以下之方式進行設定。若RIp-RIt為上述下限以上,則可獲得更優異之發光強度。若RIp-RIt為上述上限以下,則可抑制於透明層4與螢光體層3之界面處之光之反射。 The refractive index RIt of the second transparent composition is such that the first transparent resin composition (phosphor) The value (RIp-RIt) obtained by subtracting the refractive index RIt of the second transparent composition from the refractive index RIp of the transparent resin composition contained in the layer 3 is, for example, -1.0 or more, preferably -0.7 or more, more preferably It is 0 or more, more preferably 0.05 or more, and particularly preferably 0.10 or more, and is set to be 0.20 or less, for example. When RIp-RIt is at least the above lower limit, more excellent luminescence intensity can be obtained. When RIp-RIt is less than or equal to the above upper limit, reflection of light at the interface between the transparent layer 4 and the phosphor layer 3 can be suppressed.

透明層4例如亦可由複數層所形成。 The transparent layer 4 can also be formed, for example, by a plurality of layers.

[尺寸] [size]

LED2與螢光體層3及透明層4之尺寸可根據用途及目的進行適當設定。 The size of the LED 2, the phosphor layer 3, and the transparent layer 4 can be appropriately set depending on the use and purpose.

距離x(LED2之厚度x)例如為10μm以上,較佳為50μm以上,又,例如為1000μm以下,較佳為500μm以下。 The distance x (thickness x of the LED 2) is, for example, 10 μm or more, preferably 50 μm or more, and is, for example, 1000 μm or less, or preferably 500 μm or less.

LED2之左右方向長度γ及前後方向長度(未示於圖1)為LED2之面方向上之最小長度,例如為0.1μm以上,較佳為0.2μm以上,又,例如為5000μm以下,較佳為2000μm以下。 The length γ in the left-right direction of the LED 2 and the length in the front-rear direction (not shown in FIG. 1) are the minimum length in the surface direction of the LED 2, and are, for example, 0.1 μm or more, preferably 0.2 μm or more, and further, for example, 5000 μm or less, preferably Below 2000μm.

距離y(螢光體層3中對向配置於LED2之上側之部分之厚度y)例如為50μm以上,較佳為150μm以上。又,距離y例如為1000μm以下,較佳為500μm以下,更佳為未達350μm,進而較佳為300μm以下,尤佳為200μm以下,進而為150μm以下,進而為100μm以下。若距離y低於上述上限,則可提高螢光體層3之氣體透過率,於LED裝置60具備螢光體層密封之LED1時可抑制螢光體層3產生黑焦,提高螢光體層密封之LED1之可靠性,進而可提高LED裝置60之可靠性。 The distance y (the thickness y of the portion of the phosphor layer 3 that is disposed opposite to the upper side of the LED 2) is, for example, 50 μm or more, and preferably 150 μm or more. Further, the distance y is, for example, 1000 μm or less, preferably 500 μm or less, more preferably less than 350 μm, still more preferably 300 μm or less, still more preferably 200 μm or less, further 150 μm or less, and further 100 μm or less. When the distance y is lower than the upper limit, the gas permeability of the phosphor layer 3 can be increased, and when the LED device 60 is provided with the phosphor layer-sealed LED 1, it is possible to suppress the generation of black focus in the phosphor layer 3 and improve the phosphor layer-sealed LED1. Reliability, in turn, can increase the reliability of the LED device 60.

距離z(透明層4之厚度z)例如為100μm以上,較佳為200μm以上。又,距離z例如為1000μm以下,較佳為500μm以下,更佳為未達400μm,進而較佳為300μm以下,尤佳為200μm以下,最佳為100μm以下。若距離z低於上述上限,則可提高透明層4之氣體透過率, 於LED裝置60具備螢光體層密封之LED1時可抑制透明層4產生黑焦,提高螢光體層密封之LED1之可靠性,進而可提高LED裝置60之可靠性。 The distance z (thickness z of the transparent layer 4) is, for example, 100 μm or more, and preferably 200 μm or more. Further, the distance z is, for example, 1000 μm or less, preferably 500 μm or less, more preferably less than 400 μm, still more preferably 300 μm or less, still more preferably 200 μm or less, and most preferably 100 μm or less. If the distance z is lower than the above upper limit, the gas permeability of the transparent layer 4 can be increased. When the LED device 60 is provided with the LED 1 sealed by the phosphor layer, it is possible to suppress the generation of black coke in the transparent layer 4, improve the reliability of the LED 1 sealed by the phosphor layer, and further improve the reliability of the LED device 60.

又,LED2、螢光體層3及透明層4較佳為滿足下述(1)~(4)之全部。 Further, it is preferable that the LED 2, the phosphor layer 3, and the transparent layer 4 satisfy all of the following (1) to (4).

(1)用距離y除以距離x所得之值(y/x)例如為1以上,較佳為1.25以上,又,例如為5以下,較佳為未達5,更佳為4以下,進而較佳為3以下。若y/x為上述下限以上,則可獲得優異之色均勻性。若y/x為上述上限以下,則可抑制色不均。 (1) The value (y/x) obtained by dividing the distance y by the distance x is, for example, 1 or more, preferably 1.25 or more, and further, for example, 5 or less, preferably less than 5, more preferably 4 or less, and further It is preferably 3 or less. When y/x is at least the above lower limit, excellent color uniformity can be obtained. When y/x is less than or equal to the above upper limit, color unevenness can be suppressed.

(2)距離y與距離z之和(y+z)例如為0.20mm以上,較佳為0.25mm以上,更佳為0.5mm以上,又,例如為2mm以下,較佳為1.5mm以下。若y+z為上述下限以上,則可獲得優異之發光強度。若y+z為上述上限以下,則可抑制材料成本。 (2) The sum of the distance y and the distance z (y+z) is, for example, 0.20 mm or more, preferably 0.25 mm or more, more preferably 0.5 mm or more, and further, for example, 2 mm or less, preferably 1.5 mm or less. When y+z is at least the above lower limit, excellent luminescence intensity can be obtained. If y+z is equal to or less than the above upper limit, the material cost can be suppressed.

(3)距離α(螢光體層3之側部35之最小長度α)例如為50μm以上,較佳為超過50μm,更佳為100μm以上,又,例如為2000μm以下,較佳為1000μm以下。若距離α為上述下限以上,則可防止色均勻性之降低或抑制色不均。 (3) The distance α (the minimum length α of the side portion 35 of the phosphor layer 3) is, for example, 50 μm or more, preferably more than 50 μm, more preferably 100 μm or more, and further, for example, 2000 μm or less, preferably 1,000 μm or less. When the distance α is equal to or higher than the above lower limit, it is possible to prevent a decrease in color uniformity or to suppress color unevenness.

(4)用距離y除以距離α所得之值(y/α)例如為1以上,較佳為1.2以上,又,例如為2.5以下,較佳為2.0以下。若y/α為上述上限以下,則可抑制色不均。 (4) The value (y/α) obtained by dividing the distance y by the distance α is, for example, 1 or more, preferably 1.2 or more, and further, for example, 2.5 or less, preferably 2.0 or less. When y/α is equal to or less than the above upper limit, color unevenness can be suppressed.

[螢光體層密封之LED之製造方法] [Manufacturing method of LED for phosphor layer sealing]

繼而,參照圖2A~圖2F,對製造圖1所示之螢光體層密封之LED之方法及使用螢光體層密封之LED製造LED裝置之方法進行說明。 Next, a method of manufacturing the phosphor layer-sealed LED shown in FIG. 1 and a method of manufacturing an LED device using the phosphor layer-sealed LED will be described with reference to FIGS. 2A to 2F.

螢光體層密封之LED1之製造方法包括如下步驟:製造作為具備透明層4及螢光體層3之覆片材之一例之密封片材5之步驟(參照圖2A)、以使螢光體層3被覆複數個LED2之方式配置密封片材5之步驟 (參照圖2C)、及以使螢光體層密封之LED1單片化之方式切斷密封片材5之步驟(參照圖2D)。製造密封片材5之步驟(參照圖2A)包括準備透明層4之步驟、及於透明層4之表面形成螢光體層3之步驟。 The method for producing the phosphor layer-sealed LED 1 includes the steps of producing a sealing sheet 5 as an example of a cover sheet having the transparent layer 4 and the phosphor layer 3 (see FIG. 2A) so that the phosphor layer 3 is coated. Step of arranging sealing sheet 5 in a plurality of LEDs (Refer to FIG. 2C) and the step of cutting the sealing sheet 5 so that the LED layer 1 in which the phosphor layer is sealed is singulated (see FIG. 2D). The step of producing the sealing sheet 5 (refer to FIG. 2A) includes the steps of preparing the transparent layer 4 and forming the phosphor layer 3 on the surface of the transparent layer 4.

如圖2A所示,於準備透明層4之步驟中,在由透明樹脂組合物形成透明層4之情形時,首先準備以假想線所示之剝離片材6。 As shown in FIG. 2A, in the step of preparing the transparent layer 4, in the case where the transparent layer 4 is formed of the transparent resin composition, the release sheet 6 shown by an imaginary line is first prepared.

脫模片材2係為了在藉由透明層4密封LED2(於由熱硬化性樹脂組合物形成透明層4之情形時將透明層4硬化)之前之期間保護透明層4而以可剝離之方式貼合於透明層4之背面(圖1A中為下表面)。即,剝離片材6為如下可撓性膜,其係於密封片材5之出貨、搬送、保管時以被覆透明層4之背面之方式積層於透明層4之背面,並在即將使用密封片材5之前以可彎曲成大致U字狀之形式自透明層4之背面剝離。即,剝離片材6僅包含可撓性膜。又,剝離片材6之貼合面、即與透明層4之接觸面可視需要進行氟處理等剝離處理。 The release sheet 2 is detachable in order to protect the transparent layer 4 during the period before the LED 2 is sealed by the transparent layer 4 (the transparent layer 4 is cured in the case where the transparent layer 4 is formed of the thermosetting resin composition). It is bonded to the back surface of the transparent layer 4 (the lower surface in Fig. 1A). In other words, the release sheet 6 is a flexible film which is laminated on the back surface of the transparent layer 4 so as to cover the back surface of the transparent layer 4 when the sealing sheet 5 is shipped, transported, and stored, and is sealed immediately. The sheet 5 is peeled off from the back surface of the transparent layer 4 in a form that can be bent into a substantially U shape. That is, the release sheet 6 contains only the flexible film. Further, the bonding surface of the release sheet 6, that is, the contact surface with the transparent layer 4 may be subjected to a release treatment such as fluorine treatment as needed.

作為剝離片材6,可列舉:例如聚乙烯膜、聚酯膜(PET等)等聚合物膜,例如陶瓷片材,例如金屬箔等。較佳可列舉的是聚合物膜。又,脫模片材2之形狀並無特別限定,例如形成為俯視大致矩形(包括短條狀、長條狀)等。剝離片材6之厚度例如為1μm以上,較佳為10μm以上,又,例如為2000μm以下,較佳為1000μm以下。 The release sheet 6 may, for example, be a polymer film such as a polyethylene film or a polyester film (PET or the like), for example, a ceramic sheet such as a metal foil. Preferred are polymer films. Moreover, the shape of the release sheet 2 is not particularly limited, and for example, it is formed in a substantially rectangular shape (including a short strip shape or a long strip shape) in plan view. The thickness of the release sheet 6 is, for example, 1 μm or more, preferably 10 μm or more, and is, for example, 2000 μm or less, preferably 1,000 μm or less.

繼而,於由透明樹脂組合物形成透明層4之情形時,將透明樹脂組合物之清漆塗佈於剝離片材6之表面。將透明樹脂組合物塗佈於剝離片材6之表面時例如可使用分注器、敷料器、狹縫式模具塗佈機等塗佈裝置。 Then, in the case where the transparent layer 4 is formed of the transparent resin composition, the varnish of the transparent resin composition is applied to the surface of the release sheet 6. When the transparent resin composition is applied to the surface of the release sheet 6, for example, a coating device such as a dispenser, an applicator, or a slit die coater can be used.

藉由透明樹脂組合物於剝離片材6上之塗佈,而形成透明樹脂組合物之塗膜。 The coating film of the transparent resin composition is formed by coating the transparent resin composition on the release sheet 6.

其後,使塗膜完全硬化(C階段化)。作為加熱條件,加熱溫度為80℃以上,較佳為100℃以上,又,為200℃以下,較佳為150℃以 下。又,加熱時間例如為10分鐘以上,較佳為30分鐘以上,又,例如為5小時以下。 Thereafter, the coating film is completely cured (C-staged). The heating temperature is 80 ° C or higher, preferably 100 ° C or higher, and further 200 ° C or lower, preferably 150 ° C. under. Further, the heating time is, for example, 10 minutes or longer, preferably 30 minutes or longer, and for example, 5 hours or shorter.

藉此,使塗膜中之A階段之透明樹脂組合物完全硬化(C階段化)。 Thereby, the A-stage transparent resin composition in the coating film is completely cured (C-staged).

於透明樹脂組合物含有加成反應硬化型聚矽氧樹脂組合物之情形時,使烯基及/或環烯基與氫矽烷基之矽氫化反應進行至中途,並暫時停止該反應。 In the case where the transparent resin composition contains the addition reaction-curable polydecane resin composition, the hydrogenation reaction of the alkenyl group and/or the cycloalkenyl group with the hydroquinone group is carried out to the middle, and the reaction is temporarily stopped.

另一方面,於透明樹脂組合物含有縮合反應-加成反應硬化型聚矽氧樹脂之情形時,使縮合反應結束。 On the other hand, when the transparent resin composition contains a condensation reaction-addition reaction hardening type polyoxyxylene resin, the condensation reaction is completed.

藉此,由B階段之透明樹脂組合物形成透明層4。 Thereby, the transparent layer 4 is formed from the B-stage transparent resin composition.

另一方面,於由無機物形成透明層4之情形時,具體而言,準備預先成形為板狀之無機物。較佳為不使用剝離片材6(圖2A之假想線)而準備玻璃板。 On the other hand, when the transparent layer 4 is formed of an inorganic substance, specifically, an inorganic substance previously formed into a plate shape is prepared. It is preferable to prepare a glass plate without using the release sheet 6 (the imaginary line of Fig. 2A).

藉此,由無機物形成透明層4。 Thereby, the transparent layer 4 is formed from an inorganic substance.

繼而,如圖2A所示,於透明層4之表面形成螢光體層3。 Then, as shown in FIG. 2A, a phosphor layer 3 is formed on the surface of the transparent layer 4.

於由螢光體樹脂組合物形成螢光體層3之情形時,使用上述塗佈裝置,將螢光體樹脂組合物塗佈於透明層4之表面。藉此,形成螢光體樹脂組合物之塗膜。 In the case where the phosphor layer 3 is formed of the phosphor resin composition, the phosphor resin composition is applied onto the surface of the transparent layer 4 by using the above coating apparatus. Thereby, a coating film of the phosphor resin composition is formed.

其後,於螢光體樹脂組合物含有可成為B階段狀態之熱硬化性樹脂組合物之情形時,使塗膜B階段化。加熱條件為與上述範圍相同。藉此,使塗膜B階段化。 Then, when the phosphor resin composition contains a thermosetting resin composition which can be in a B-stage state, the coating film is B-staged. The heating conditions are the same as the above range. Thereby, the coating film is B-staged.

於螢光體樹脂組合物含有加成反應硬化型聚矽氧樹脂組合物之情形時,使烯基及/或環烯基與氫矽烷基之矽氫化反應進行至中途,並暫時停止該反應。 When the phosphor resin composition contains an addition reaction-curable polydecane resin composition, the hydrogenation reaction of the alkenyl group and/or the cycloalkenyl group with the hydroquinone group is carried out to the middle, and the reaction is temporarily stopped.

另一方面,於螢光體樹脂組合物含有縮合反應-加成反應硬化型聚矽氧樹脂之情形時,使縮合反應結束。 On the other hand, when the phosphor resin composition contains a condensation reaction-addition reaction hardening type polyoxyxylene resin, the condensation reaction is completed.

藉此,由螢光體樹脂組合物形成螢光體層3。 Thereby, the phosphor layer 3 is formed of the phosphor resin composition.

繼而,將板狀之螢光體層3配置於透明層4之上表面。 Then, the plate-shaped phosphor layer 3 is disposed on the upper surface of the transparent layer 4.

藉此,如圖2A所示,獲得具備透明層4與螢光體層3之密封片材5。較佳為密封片材5包含透明層4與螢光體層3。 Thereby, as shown in FIG. 2A, the sealing sheet 5 provided with the transparent layer 4 and the phosphor layer 3 is obtained. Preferably, the sealing sheet 5 comprises a transparent layer 4 and a phosphor layer 3.

該密封片材5具有平板形狀,具體而言,具有特定之厚度,並且沿左右方向及前後方向延伸且具有平坦之正面及平坦之背面。又,密封片材5為LED裝置60之一零件、即用以製作LED裝置60之零件而並非LED裝置60(參照下述圖2F),且不包含LED2及供LED2安裝之基板50而以單獨零件個體進行流通,為產業上可利用之器件(device)。 The sealing sheet 5 has a flat plate shape, specifically, has a specific thickness, and extends in the left-right direction and the front-rear direction and has a flat front surface and a flat back surface. Further, the sealing sheet 5 is a component of the LED device 60, that is, a component for forming the LED device 60, and is not the LED device 60 (see FIG. 2F below), and does not include the LED 2 and the substrate 50 on which the LED 2 is mounted. Separate parts are individually distributed and are industrially available devices.

再者,於透明層4由透明樹脂組合物形成之情形時,密封片材5具備剝離片材6、透明層4及螢光體層3。較佳為密封片材5包含剝離片材6、透明層4及螢光體層3。 Further, when the transparent layer 4 is formed of a transparent resin composition, the sealing sheet 5 is provided with the release sheet 6, the transparent layer 4, and the phosphor layer 3. It is preferable that the sealing sheet 5 includes the release sheet 6, the transparent layer 4, and the phosphor layer 3.

另外,如圖2B所示,準備複數個LED2。具體而言,將複數個LED2配置於支持板7之上表面。 In addition, as shown in FIG. 2B, a plurality of LEDs 2 are prepared. Specifically, a plurality of LEDs 2 are disposed on the upper surface of the support board 7.

關於支持板7,藉由螢光體層3被覆複數個LED2從而密封,獲得密封LED集合體8(參照下述圖2C),將密封LED集合體8切斷而獲得螢光體層密封之LED1,然後將螢光體層密封之LED1剝離,在此期間,為了保護螢光體層密封之LED1之LED2而以可剝離之方式將該支持板7貼合於螢光體層密封之LED1之LED2之露出面(圖1中之下表面21)。即,支持板7為如下剝離板,其於螢光體層密封之LED1之出貨、搬送、保管時支持LED2且以被覆LED2之下表面21之方式積層於LED2之下表面21,於即將對基板50安裝LED2之前可如圖2D之假想線所示般將螢光體層密封之LED1剝離。即,支持板7僅包含剝離板。 The support plate 7 is sealed by coating a plurality of LEDs 2 on the phosphor layer 3 to obtain a sealed LED assembly 8 (see FIG. 2C below), and the sealed LED assembly 8 is cut to obtain a phosphor layer-sealed LED 1 and then The phosphor layer-sealed LED 1 is peeled off, and during this period, the support plate 7 is detachably attached to the exposed surface of the LED 2 of the phosphor layer-sealed LED 1 in order to protect the LED 2 of the phosphor layer-sealed LED 1 (Fig. 1 lower surface 21). In other words, the support plate 7 is a peeling plate that supports the LED 2 during shipment, transport, and storage of the LED 1 sealed by the phosphor layer, and is laminated on the lower surface 21 of the LED 2 so as to cover the lower surface 21 of the LED 2, that is, the substrate is to be Before the LED 2 is mounted, the phosphor layer sealed LED 1 can be peeled off as shown by the imaginary line of FIG. 2D. That is, the support plate 7 includes only the peeling plate.

支持板7係由與上述剝離片材6相同之材料所形成。又,亦可由藉由加熱而能夠容易剝離密封LED集合體8之熱剝離片材形成支持板7。進而,可於支持板7之表面配置感壓接著劑層。 The support plate 7 is formed of the same material as the above-mentioned release sheet 6. Further, the support sheet 7 may be formed by the heat-peelable sheet which can easily peel off the sealed LED assembly 8 by heating. Further, a pressure-sensitive adhesive layer can be disposed on the surface of the support sheet 7.

支持板7之厚度例如為10μm以上,較佳為50μm以上,又,例如為1000μm以下,較佳為100μm以下。 The thickness of the support plate 7 is, for example, 10 μm or more, preferably 50 μm or more, and is, for example, 1000 μm or less, preferably 100 μm or less.

並且,將複數個LED2配置於支持板7之表面(上表面)。具體而言,將複數個LED2於左右方向及前後方向隔開間隔地排列配置。又,以使LED2之下表面21(包含未圖示之凸塊)接觸支持板7之表面(上表面)之方式將複數個LED2配置於支持板7之表面(上表面)。 Further, a plurality of LEDs 2 are disposed on the surface (upper surface) of the support plate 7. Specifically, a plurality of LEDs 2 are arranged side by side at intervals in the left-right direction and the front-rear direction. Further, a plurality of LEDs 2 are disposed on the surface (upper surface) of the support plate 7 such that the lower surface 21 of the LED 2 (including a bump (not shown) contacts the surface (upper surface) of the support plate 7.

複數個LED2之間距P、即一LED2和一LED2與其所鄰接之LED2之間之間隔之總和P例如為0.3mm以上,較佳為0.5mm以上,又,例如為5mm以下,較佳為3mm以下。又,複數個LED2之間隔例如為0.1mm以上,較佳為0.3mm以上,又,例如為3mm以下,較佳為2mm以下。 The total distance P between the plurality of LEDs P, that is, the interval between the LEDs 2 and the LEDs 2 and the adjacent LEDs 2 is, for example, 0.3 mm or more, preferably 0.5 mm or more, and further, for example, 5 mm or less, preferably 3 mm or less. . Further, the interval between the plurality of LEDs 2 is, for example, 0.1 mm or more, preferably 0.3 mm or more, and for example, 3 mm or less, preferably 2 mm or less.

其後,如圖2B之箭頭及圖2C所示,藉由密封片材5密封複數個LED2。 Thereafter, as shown by the arrow of FIG. 2B and FIG. 2C, a plurality of LEDs 2 are sealed by the sealing sheet 5.

例如對支持複數個LED2之支持板7壓接密封片材5。較佳為對支持複數個LED2之支持板7熱壓接(熱壓)密封片材5。 For example, the sealing sheet 5 is crimped to the support plate 7 supporting a plurality of LEDs 2. It is preferable to thermocompression (hot press) the sealing sheet 5 to the support plate 7 supporting a plurality of LEDs 2.

具體而言,首先將密封片材5、複數個LED2及支持板7設置於具備熱源之平板壓製機等。雖未圖示,但平板壓製機具備下模具及於其上側對向配置之上模具。具體而言,以使複數個LED2朝上之方式將剝離片材6配置於下模具之上表面。又,將圖2A所示之密封片材5上下翻轉後以使螢光體層3朝下、即使螢光體層3與LED2相對向之方式將剝離片材6配置於上模具之下表面。 Specifically, first, the sealing sheet 5, the plurality of LEDs 2, and the supporting plate 7 are placed on a flat plate press or the like including a heat source. Although not shown, the flat press has a lower mold and an upper mold disposed opposite to the upper side. Specifically, the release sheet 6 is placed on the upper surface of the lower mold so that the plurality of LEDs 2 face upward. Moreover, the sealing sheet 5 shown in FIG. 2A is turned upside down so that the phosphor layer 3 faces downward, and the peeling sheet 6 is disposed on the lower surface of the upper mold even if the phosphor layer 3 and the LED 2 face each other.

並且,藉由平板壓製機,將密封片材5與複數個LED2及支持板7進行熱壓。 Further, the sealing sheet 5 and the plurality of LEDs 2 and the supporting plate 7 are hot-pressed by a flat press.

關於平板壓製機之溫度,於螢光體層3及/或透明層4含有具有熱塑性及熱硬化性之苯基系聚矽氧樹脂組合物之情形時,該溫度為苯基系聚矽氧樹脂組合物之熱塑化溫度或其以上,就一次實施苯基系聚矽 氧樹脂組合物之熱塑化及熱硬化之觀點而言,較佳為熱硬化溫度或其以上,具體而言,例如為60℃以上,較佳為80℃以上,又,例如為150℃以下,較佳為120℃以下。 Regarding the temperature of the flat press, when the phosphor layer 3 and/or the transparent layer 4 contains a thermoplastic and thermosetting phenyl-based polyoxyxene resin composition, the temperature is a phenyl polyoxyl resin combination. Phenyl polycondensation is carried out once at the temperature of the thermoplasticization temperature of the substance or above. From the viewpoint of thermoplasticization and thermal curing of the oxygen resin composition, it is preferably a heat curing temperature or higher, and specifically, for example, 60 ° C or higher, preferably 80 ° C or higher, and, for example, 150 ° C or lower. Preferably, it is 120 ° C or less.

壓製壓力例如為0.1MPa以上,較佳為1MPa以上,又,例如為10MPa以下,較佳為5MPa以下。 The pressing pressure is, for example, 0.1 MPa or more, preferably 1 MPa or more, and further, for example, 10 MPa or less, preferably 5 MPa or less.

壓製時間例如為1分鐘以上,較佳為5分鐘以上,又,例如為60分鐘以下,較佳為20分鐘以下。 The pressing time is, for example, 1 minute or longer, preferably 5 minutes or longer, and for example, 60 minutes or shorter, preferably 20 minutes or shorter.

於螢光體層3含有具有熱塑性及熱硬化性之苯基系聚矽氧樹脂組合物之情形時,藉由上述熱壓而使螢光體層3塑化。接著,藉由塑化後之螢光體層3埋設複數個LED2。具體而言,如圖1所示,LED2之上表面22及側面23被螢光體層3被覆。 In the case where the phosphor layer 3 contains a thermoplastic or thermosetting phenyl-based polyoxyxene resin composition, the phosphor layer 3 is plasticized by the above-described hot pressing. Next, a plurality of LEDs 2 are embedded by the phosphor layer 3 after plasticization. Specifically, as shown in FIG. 1, the upper surface 22 and the side surface 23 of the LED 2 are covered by the phosphor layer 3.

又,於透明層4含有具有熱塑性及熱硬化性之苯基系聚矽氧樹脂組合物之情形時,藉由上述熱壓而使透明層4塑化,從而密接於螢光體層3。 Further, when the transparent layer 4 contains a thermoplastic or thermosetting phenyl-based polyoxyxene resin composition, the transparent layer 4 is plasticized by the above-described hot pressing to adhere to the phosphor layer 3.

藉此,如圖2C所示,藉由密封片材5之螢光體層3密封複數個LED2。 Thereby, as shown in FIG. 2C, a plurality of LEDs 2 are sealed by the phosphor layer 3 of the sealing sheet 5.

其後,於螢光體層3及/或透明層4包含B階段化狀態之二段反應硬化性樹脂組合物之情形時,將其進行C階段化。 Then, when the phosphor layer 3 and/or the transparent layer 4 contains the two-stage reaction-curable resin composition in the B-staged state, it is C-staged.

於二段反應硬化性樹脂組合物包含苯基系聚矽氧樹脂組合物之情形時,在苯基系聚矽氧樹脂組合物之反應(C階段化反應)中,含烯基之聚矽氧烷之烯基及/或環烯基與含氫矽烷基之聚矽氧烷之氫矽烷基之矽氫化加成反應得以進一步促進。其後,烯基及/或環烯基、或含氫矽烷基之聚矽氧烷之氫矽烷基消失,而使矽氫化加成反應結束,藉此獲得C階段之苯基系聚矽氧樹脂組合物之生成物、即硬化物。即,藉由矽氫化加成反應之結束,苯基系聚矽氧樹脂組合物表現出硬化性(具體而言為熱硬化性)。 In the case where the second-stage reaction curable resin composition contains a phenyl-based polyfluorene-oxygen resin composition, in the reaction (C-stage reaction) of the phenyl-based polyoxyxylene resin composition, the alkenyl group-containing polyoxyl The hydrogenation addition reaction of an alkenyl group and/or a cycloalkenyl group with a hydroxanyl group of a polyoxyalkylene group containing a hydroquinone group is further promoted. Thereafter, the alkenyl group and/or the cycloalkenyl group or the hydrofluorenyl group of the polyoxyalkylene group containing a hydroquinone group disappears, and the hydrogenation addition reaction of the hydrazine is completed, thereby obtaining a C-stage phenyl-based polyfluorene-oxygen resin. A product of the composition, that is, a cured product. That is, the phenyl-based polyoxyxene resin composition exhibits curability (specifically, thermosetting property) by the end of the hydrogenation addition reaction.

上述生成物係以下述平均組成式(3)表示。 The above product is represented by the following average composition formula (3).

平均組成式(3):R5 eSiO(4-e)/2 Average composition formula (3): R 5 e SiO (4-e)/2

(式中,R5表示包含苯基之未經取代或經取代之碳數1~10之1價之烴基(其中,烯基及環烯基除外)。e為0.5以上且2.0以下) (wherein R 5 represents an unsubstituted or substituted hydrocarbon group having 1 to 10 carbon atoms (excluding an alkenyl group and a cycloalkenyl group) having an unsubstituted or substituted phenyl group; e is 0.5 or more and 2.0 or less)

作為R5所表示之未經取代或經取代之碳數1~10之1價之烴基,可例示與式(1)之R2所表示之未經取代或經取代之碳數1~10之1價之烴基、及式(2)之R3所表示之未經取代或經取代之碳數1~10之1價之烴基相同者。較佳為列舉未經取代之1價之烴基,更佳為列舉碳數1~10之烷基、碳數6~10之芳基,進而較佳為列舉苯基及甲基之併用。 The unsubstituted or substituted hydrocarbon group having 1 to 10 carbon atoms represented by R 5 may be an unsubstituted or substituted carbon number of 1 to 10 represented by R 2 of the formula (1). The monovalent hydrocarbon group and the unsubstituted or substituted hydrocarbon group having 1 to 10 carbon atoms represented by R 3 of the formula (2) are the same. The unsubstituted monovalent hydrocarbon group is preferred, and the alkyl group having 1 to 10 carbon atoms and the aryl group having 6 to 10 carbon atoms are more preferred, and a phenyl group and a methyl group are preferably used in combination.

e較佳為0.7以上且1.0以下。 e is preferably 0.7 or more and 1.0 or less.

並且,生成物之平均組成式(3)之R5中之苯基之含有比率例如為30莫耳%以上,較佳為35莫耳%以上,又,例如為55莫耳%以下,較佳為50莫耳%以下。 Further, the content ratio of the phenyl group in R 5 of the average composition formula (3) of the product is, for example, 30 mol% or more, preferably 35 mol% or more, and further, for example, 55 mol% or less, preferably It is 50% or less.

生成物之平均組成式(3)之R5中之苯基之含有比率係生成物之直接鍵結於矽原子之1價之烴基(平均組成式(3)中,以R5表示)中之苯基濃度。 The content ratio of the phenyl group in R 5 of the average composition formula (3) of the product is directly bonded to the monovalent hydrocarbon group of the fluorene atom (in the average composition formula (3), represented by R 5 ) Phenyl concentration.

生成物之平均組成式(3)之R5中之苯基之含有比率係藉由1H-NMR及29Si-NMR算出。R5中之苯基之含有比率之詳細算出方法例如係基於WO2011/125463等之記載,藉由1H-NMR及29Si-NMR算出。 The content ratio of the phenyl group in R 5 of the average composition formula (3) of the product was calculated by 1 H-NMR and 29 Si-NMR. The detailed calculation method of the content ratio of the phenyl group in R 5 is calculated, for example, by 1 H-NMR and 29 Si-NMR based on the description of WO2011/125463 and the like.

繼而,如圖2C之箭頭所示,將剝離片材6自透明層4剝離。 Then, as shown by the arrow in FIG. 2C, the release sheet 6 is peeled off from the transparent layer 4.

藉此,以由支持板7支持之狀態獲得具備複數個LED2、螢光體層3及透明層4之密封LED集合體8。 Thereby, the sealed LED assembly 8 including the plurality of LEDs 2, the phosphor layer 3, and the transparent layer 4 is obtained in a state supported by the support plate 7.

其後,如圖2D之單點鏈線所示,以使複數個LED2單片化之方式切斷密封LED集合體8。具體而言,沿前後方向及左右方向將對應於各LED2之螢光體層3及透明層4切斷。藉此,以由支持板7支持之狀態 獲得具有1個LED2、埋設且被覆LED2之螢光體層3及配置於螢光體層3之上表面之透明層4之螢光體層密封之LED1。 Thereafter, as shown by the single-dot chain line of FIG. 2D, the sealed LED assembly 8 is cut so that a plurality of LEDs 2 are singulated. Specifically, the phosphor layer 3 and the transparent layer 4 corresponding to the respective LEDs 2 are cut in the front-rear direction and the left-right direction. Thereby, the state supported by the support board 7 The LED 1 having the LED layer 2, the phosphor layer 3 embedded and coated with the LED 2, and the phosphor layer sealed on the transparent layer 4 on the upper surface of the phosphor layer 3 is obtained.

繼而,如圖2D之箭頭及假想線所示般,將複數個螢光體層密封之LED1自支持板7剝離。 Then, as shown by the arrow and the imaginary line of FIG. 2D, the LED1 sealed with a plurality of phosphor layers is peeled off from the support plate 7.

藉此,如圖2E所示,獲得具備1個LED2、埋設且被覆LED2之螢光體層3及配置於螢光體層3之上表面之透明層4之螢光體層密封之LED1。 Thereby, as shown in FIG. 2E, the LED 1 having the LED layer 2, the phosphor layer 3 in which the LED 2 is buried and covered, and the phosphor layer sealed on the transparent layer 4 on the upper surface of the phosphor layer 3 is obtained.

螢光體層密封之LED1不包含支持板7(參照圖2C)及基板50(參照下述圖2F),較佳為包含LED2、螢光體層3及透明層4。即,螢光體層密封之LED1不為下述說明之LED裝置60(圖2F),即不包含LED裝置60所具備之基板50。即,螢光體層密封之LED1係以尚未與LED裝置60之基板50所具備之端子(未圖示)電性連接之方式構成。又,螢光體層密封之LED1係LED裝置60之一零件、即用以製作LED裝置60之零件,且以單獨零件個體進行流通,為產業上可利用之器件。 The phosphor layer-sealed LED 1 does not include the support plate 7 (see FIG. 2C) and the substrate 50 (see FIG. 2F below), and preferably includes the LED 2, the phosphor layer 3, and the transparent layer 4. That is, the phosphor layer-sealed LED 1 is not the LED device 60 (FIG. 2F) described below, that is, the substrate 50 included in the LED device 60 is not included. In other words, the phosphor layer-sealed LED 1 is configured not to be electrically connected to a terminal (not shown) provided in the substrate 50 of the LED device 60. Further, the phosphor layer-sealed LED1 is one of the components of the LED device 60, that is, a component for manufacturing the LED device 60, and is circulated as a separate component, and is an industrially usable device.

其後,根據發光波長或發光效率,對複數個螢光體層密封之LED1進行篩選。 Thereafter, a plurality of phosphor layer-sealed LEDs 1 are screened according to the emission wavelength or the luminous efficiency.

繼而,如圖2F所示,將螢光體層密封之LED1安裝至基板50。 Then, as shown in FIG. 2F, the phosphor layer-sealed LED 1 is mounted to the substrate 50.

具體而言,首先,準備於上表面設置有端子(未圖示)之基板50。 Specifically, first, a substrate 50 having a terminal (not shown) provided on the upper surface is prepared.

基板50呈沿前後方向及左右方向延伸之大致矩形平板狀,例如為絕緣基板。又,基板50具備配置於上表面之端子(未圖示)。 The substrate 50 has a substantially rectangular flat plate shape extending in the front-rear direction and the left-right direction, and is, for example, an insulating substrate. Further, the substrate 50 includes terminals (not shown) disposed on the upper surface.

其後,如圖2F所示,將螢光體層密封之LED1安裝至基板50。 Thereafter, as shown in FIG. 2F, the phosphor layer-sealed LED 1 is mounted to the substrate 50.

具體而言,使螢光體層密封之LED1中之LED2之凸塊(未圖示)與基板50之端子(未圖示)接觸,從而使該等電性連接。即,將螢光體層密封之LED1之LED2覆晶安裝至基板50。又,使螢光體層3之下表面32與基板50接觸。 Specifically, the bumps (not shown) of the LEDs 2 in the LED 1 sealed by the phosphor layer are brought into contact with the terminals (not shown) of the substrate 50 to electrically connect the electrodes. That is, the LED 2 of the LED 1 sealed with the phosphor layer is flip-chip mounted on the substrate 50. Further, the lower surface 32 of the phosphor layer 3 is brought into contact with the substrate 50.

藉此,獲得具備基板50與安裝於基板50之螢光體層密封之LED1 之LED裝置60。較佳為LED裝置60包含基板50與螢光體層密封之LED1。即,LED裝置60不包含剝離片材6及/或支持板7,較佳為包含基板50、LED2、螢光體層3及透明層4。 Thereby, the LED 1 having the substrate 50 and the phosphor layer mounted on the substrate 50 is obtained. LED device 60. Preferably, the LED device 60 includes an LED 1 in which the substrate 50 and the phosphor layer are sealed. That is, the LED device 60 does not include the release sheet 6 and/or the support plate 7, and preferably includes the substrate 50, the LED 2, the phosphor layer 3, and the transparent layer 4.

[第1實施形態之作用效果] [Effects of the first embodiment]

並且,如圖1所示,該螢光體層密封之LED1具備將螢光體層3之上表面31被覆之透明層4,故而可使發光強度提高。具體而言,可使透明樹脂組合物(透明層4)與空氣之界面遠離(離開)作為光吸收體之基板50或LED2(LED2與螢光體層3之界面)。因此,自LED2朝上側發光並經螢光體層3波長轉換之光與未經螢光體層3波長轉換而透過螢光體層3之光即便於透明樹脂組合物(透明層4)與空氣之界面發生反射亦不易回射至基板50或LED2(光吸收體),故而能夠使螢光體層密封之LED1之發光強度提高。 Further, as shown in FIG. 1, the phosphor layer-sealed LED 1 includes the transparent layer 4 which covers the upper surface 31 of the phosphor layer 3, so that the luminous intensity can be improved. Specifically, the interface between the transparent resin composition (transparent layer 4) and the air can be separated (away from) the substrate 50 or the LED 2 (the interface between the LED 2 and the phosphor layer 3) as a light absorber. Therefore, light that is emitted from the LED 2 toward the upper side and wavelength-converted by the phosphor layer 3 and light that has not been wavelength-converted by the phosphor layer 3 and transmitted through the phosphor layer 3 occurs even at the interface between the transparent resin composition (transparent layer 4) and the air. Since the reflection is not easily returned to the substrate 50 or the LED 2 (light absorber), the luminous intensity of the LED 1 sealed by the phosphor layer can be improved.

又,該螢光體層密封之LED1由於滿足關於上述x、y、z及α之(1)~(4)之全部,故而可使發光強度更進一步提高且具有優異之色均勻性,並且抑制色不均。 Further, since the phosphor layer-sealed LED 1 satisfies all of (1) to (4) of the above x, y, z, and α, the luminescence intensity can be further improved and excellent color uniformity can be obtained, and color suppression can be suppressed. Uneven.

又,於該螢光體層密封之LED1中,若第1透明組合物(螢光體層3所包含之透明樹脂組合物)之折射率RIp為1.45以上且1.60以下,則可使螢光體層密封之LED1之發光強度提高。 Further, in the LED 1 in which the phosphor layer is sealed, when the refractive index RIp of the first transparent composition (the transparent resin composition contained in the phosphor layer 3) is 1.45 or more and 1.60 or less, the phosphor layer can be sealed. The luminous intensity of LED1 is improved.

又,於該螢光體層密封之LED1中,若自第1透明組合物(螢光體層3所包含之透明樹脂組合物)之折射率RIp減去第2透明組合物(透明層4所包含之透明樹脂組合物)之折射率RIt而得之值(折射率RIp-折射率RIt)為-0.70以上且0.20以下,則可使螢光體層密封之LED1之發光強度提高。 Further, in the LED 1 in which the phosphor layer is sealed, the second transparent composition (the transparent layer 4 is included in the refractive index RIp from the first transparent composition (the transparent resin composition contained in the phosphor layer 3)) When the refractive index RIt of the transparent resin composition (refractive index RIp-refractive index RIt) is -0.70 or more and 0.20 or less, the luminous intensity of the LED 1 sealed by the phosphor layer can be improved.

又,於該螢光體層密封之LED1中,若RIp-RIt為0.05以上,則可使螢光體層密封之LED1之發光強度更進一步提高。 Further, in the LED 1 in which the phosphor layer is sealed, when the RIp-RIt is 0.05 or more, the luminous intensity of the LED 1 sealed by the phosphor layer can be further improved.

又,於該螢光體層密封之LED1中,若距離α超過50μm,則可使 色均勻性提高。 Moreover, in the LED 1 sealed by the phosphor layer, if the distance α exceeds 50 μm, Color uniformity is improved.

根據該螢光體層密封之LED1之製造方法,使用密封片材5,可簡便地製造螢光體層密封之LED1。 According to the method for producing the LED 1 in which the phosphor layer is sealed, the phosphor layer-sealed LED 1 can be easily manufactured by using the sealing sheet 5.

根據該螢光體層密封之LED1之製造方法,可簡便地製造具有所需尺寸(y、z、α等)之螢光體層密封之LED1。 According to the method for producing the phosphor layer sealed LED 1, it is possible to easily produce the phosphor layer sealed LED 1 having a desired size (y, z, α, etc.).

[變化例] [variation]

於變化例中,對與上述第1實施形態相同之構件及步驟賦予同一參照符號,並省略其詳細說明。 In the modification, members and steps that are the same as those in the first embodiment are denoted by the same reference numerals, and the detailed description thereof will be omitted.

於第1實施形態中,將LED2、螢光體層3及透明層4分別形成為俯視大致矩形,但其形狀並無特別限定。雖未圖示,但LED2、螢光體層3及透明層4亦可分別形成為例如俯視大致圓形、俯視大致多邊形(大致矩形除外)。 In the first embodiment, the LED 2, the phosphor layer 3, and the transparent layer 4 are each formed in a substantially rectangular shape in plan view, but the shape thereof is not particularly limited. Although not shown, the LED 2, the phosphor layer 3, and the transparent layer 4 may be formed, for example, in a substantially circular shape in plan view and a substantially polygonal shape in plan view (excluding a substantially rectangular shape).

進而,於第1實施形態中,如圖1所示,將透明層4形成為剖視大致矩形,雖未圖示,但例如亦可形成為上表面彎曲之剖面圓頂形狀(或凸透鏡形狀)。於該情形時,距離z係自螢光體層3之上表面31至透明層4之最上面之距離。 Further, in the first embodiment, as shown in FIG. 1, the transparent layer 4 is formed in a substantially rectangular shape in cross section, and although not shown, it may be formed, for example, in a cross-sectional dome shape (or a convex lens shape) in which the upper surface is curved. . In this case, the distance z is the distance from the upper surface 31 of the phosphor layer 3 to the uppermost surface of the transparent layer 4.

進而,亦可將透明層4形成為平剖面朝上側逐漸縮小之大致錐形,具體而言為四角錐形、三角錐形等多角錘形。 Further, the transparent layer 4 may be formed into a substantially conical shape in which the flat cross section is gradually reduced toward the upper side, and specifically, a polygonal shape such as a quadrangular pyramid or a triangular pyramid.

進而又,於第1實施形態中,如圖1所示,螢光體層3之收容部30之周圍之下表面32係以可與基板50接觸之螢光體側接觸可能面之形式構成。然而,例如圖5所示,可將下表面32以可與基板50隔開間隔之間隔確保可能面之形式構成。 Further, in the first embodiment, as shown in FIG. 1, the lower surface 32 of the periphery of the accommodating portion 30 of the phosphor layer 3 is configured to be in contact with the phosphor side contacting the substrate 50. However, as shown, for example, in FIG. 5, the lower surface 32 can be constructed in a form that is spaced apart from the substrate 50 to ensure a possible surface.

如圖5所示,螢光體層3之收容部30之周圍之下表面32自LED2露出,位於較LED2之下表面21更靠上側部分。具體而言,螢光體層3之下表面32於在面方向上投影時位於LED2之下表面21及上表面22之間。即,螢光體層3之下表面32於在前後方向及左右方向上投影時, 配置於LED2之側面23所包含之位置。 As shown in FIG. 5, the peripheral lower surface 32 of the accommodating portion 30 of the phosphor layer 3 is exposed from the LED 2 and is located on the upper side portion of the lower surface 21 of the LED 2. Specifically, the lower surface 32 of the phosphor layer 3 is located between the lower surface 21 and the upper surface 22 of the LED 2 when projected in the plane direction. That is, when the lower surface 32 of the phosphor layer 3 is projected in the front-rear direction and the left-right direction, It is disposed at the position included in the side 23 of the LED 2.

藉此,使螢光體層3之下表面32露出LED2之側面23之下端部。 Thereby, the lower surface 32 of the phosphor layer 3 is exposed to the lower end portion of the side surface 23 of the LED 2.

進而,於第1實施形態中,依序將螢光體層3及透明層4進行C階段化,即將螢光體層3進行C階段化,其後將透明層4進行C階段化,例如亦可將B階段狀態之螢光體層3及透明層4同時C階段化。 Further, in the first embodiment, the phosphor layer 3 and the transparent layer 4 are sequentially C-staged, that is, the phosphor layer 3 is C-staged, and then the transparent layer 4 is C-staged, for example, The phosphor layer 3 and the transparent layer 4 in the B-stage state are simultaneously C-staged.

又,於上述第1實施形態中,如圖2A~圖2E所示,將密封片材5形成於剝離片材6上,其後藉由密封片材5密封LED2。 Moreover, in the above-described first embodiment, as shown in FIGS. 2A to 2E, the sealing sheet 5 is formed on the release sheet 6, and then the LED 2 is sealed by the sealing sheet 5.

然而,如圖3A~圖4H所示,於剝離片材6上不形成密封片材5而於支持板7上依序滴加(灌注)螢光體樹脂組合物之清漆及透明樹脂組合物之清漆,從而可依序形成螢光體層3及透明層4。 However, as shown in FIGS. 3A to 4H, the varnish of the phosphor resin composition and the transparent resin composition are sequentially dropped (perfused) on the support sheet 7 without forming the sealing sheet 5 on the release sheet 6. The varnish is such that the phosphor layer 3 and the transparent layer 4 can be formed in order.

於該方法中,如圖3C所示,將螢光體樹脂組合物之清漆滴加(灌注)至支持板7上。 In this method, as shown in Fig. 3C, the varnish of the phosphor resin composition is dropped (perfused) onto the support plate 7.

將螢光體樹脂組合物之清漆滴加至支持板7上時,首先如圖3A所示,將1個LED2配置於支持板7之上表面。藉此,準備由支持板7支持之1個LED2。 When the varnish of the phosphor resin composition is dropped onto the support plate 7, first, as shown in FIG. 3A, one LED 2 is placed on the upper surface of the support plate 7. Thereby, one LED 2 supported by the support board 7 is prepared.

另外,如圖3A所示,準備第1障壁11。 Further, as shown in FIG. 3A, the first barrier rib 11 is prepared.

第1障壁11形成為俯視大致矩形。又,於第1障壁11之中央部形成有上下方向上貫通第1障壁11之第1開口部13。第1開口部13形成為對應於螢光體層3之外形形狀之俯視大致矩形。 The first barrier rib 11 is formed in a substantially rectangular shape in plan view. Further, a first opening portion 13 that penetrates the first barrier rib 11 in the vertical direction is formed in a central portion of the first barrier rib 11 . The first opening portion 13 is formed in a substantially rectangular shape in plan view corresponding to the outer shape of the phosphor layer 3 .

作為第1障壁11之材料,例如可列舉:樹脂、樹脂含浸玻璃布、金屬等。該等可單獨使用或併用。較佳為列舉樹脂。 Examples of the material of the first barrier rib 11 include a resin, a resin impregnated glass cloth, and a metal. These may be used alone or in combination. Preferably, the resin is listed.

作為樹脂,可列舉熱硬化性樹脂、熱塑性樹脂。較佳為列舉熱硬化性樹脂。作為熱硬化樹脂,較佳為列舉無法成為B階段狀態之單段反應硬化性樹脂。作為此種單段反應硬化性樹脂,可列舉單段反應硬化性甲基系聚矽氧樹脂組合物。作為單段反應硬化性甲基系聚矽氧樹脂組合物,例如可使用ELASTOSIL系列(Wacker Asahikasei Silicone 公司製造,具體而言為ELASTOSIL LR7665等甲基系聚矽氧樹脂組合物)、KER系列(Shin-Etsu Silicones公司製造)等市售品。 Examples of the resin include a thermosetting resin and a thermoplastic resin. A thermosetting resin is preferred. The thermosetting resin is preferably a single-stage reaction curable resin which cannot be in a B-stage state. As such a single-stage reaction-curable resin, a single-stage reaction-curable methyl-based polyoxyxene resin composition is mentioned. As the single-stage reaction-curable methyl polyoxy resin composition, for example, ELASTOSIL series (Wacker Asahikasei Silicone) can be used. The company manufactures, specifically, a methyl type polyoxyl resin composition such as ELASTOSIL LR7665, and a commercial item such as KER series (manufactured by Shin-Etsu Silicones Co., Ltd.).

再者,樹脂亦可以調配有填料之樹脂組合物之形式製備。 Further, the resin may be prepared in the form of a resin composition containing a filler.

第1障壁11之厚度例如為100μm以上,較佳為200μm以上,更佳為400μm以上,又,例如為1500μm以下。 The thickness of the first barrier rib 11 is, for example, 100 μm or more, preferably 200 μm or more, more preferably 400 μm or more, and for example, 1500 μm or less.

繼而,如圖3B所示,將第1障壁11以使之包圍LED2之方式配置於支持板7之上表面。 Then, as shown in FIG. 3B, the first barrier rib 11 is disposed on the upper surface of the support plate 7 so as to surround the LED 2.

將第1障壁11以使之包圍LED2之方式配置於支持板7之上表面時,首先,於第1障壁11之材料為樹脂之情形時,製備包含樹脂之清漆,繼而將清漆塗佈於未圖示之剝離片材之表面。其後,於材料含有熱硬化性樹脂之情形時,對清漆進行加熱而使之硬化。其後,將硬化物外形加工成上述圖案。 When the first barrier rib 11 is disposed on the upper surface of the support plate 7 so as to surround the LED 2, first, when the material of the first barrier rib 11 is a resin, a varnish containing a resin is prepared, and then the varnish is applied to the varnish. The surface of the peeled sheet shown. Thereafter, when the material contains a thermosetting resin, the varnish is heated to be hardened. Thereafter, the cured product profile is processed into the above pattern.

其後,如圖3A之箭頭及圖3B所示,將第1障壁11以LED2被插入至第1障壁11之第1開口部13之方式載置於支持板7之上表面。 Then, as shown by the arrow in FIG. 3A and FIG. 3B, the first barrier rib 11 is placed on the upper surface of the support plate 7 so that the LED 2 is inserted into the first opening 13 of the first barrier rib 11 .

或者亦可如圖3B所示,將清漆以上述圖案直接塗佈於LED2之周圍,而將第1障壁11直接形成於支持板7之上表面。 Alternatively, as shown in FIG. 3B, the varnish may be directly applied to the periphery of the LED 2 in the above-described pattern, and the first barrier rib 11 may be directly formed on the upper surface of the support plate 7.

藉此,將第1障壁11以使之包圍LED2之方式配置於支持板7之上表面。 Thereby, the first barrier rib 11 is disposed on the upper surface of the support plate 7 so as to surround the LED 2 .

繼而如圖3C所示,將螢光體樹脂組合物之清漆滴加至支持板7之第1障壁11之第1開口部13內。具體而言,以使清漆之液面與第1障壁11之上表面成為同一面之方式將清漆滴加至第1開口部13內。 Then, as shown in FIG. 3C, the varnish of the phosphor resin composition is dropped into the first opening 13 of the first barrier rib 11 of the support plate 7. Specifically, the varnish is dropped into the first opening portion 13 such that the liquid surface of the varnish and the upper surface of the first barrier rib 11 are flush with each other.

其後,於螢光體樹脂組合物含有可成為B階段狀態之熱硬化性樹脂組合物之情形時,將螢光體樹脂組合物B階段化。 Then, when the phosphor resin composition contains a thermosetting resin composition which can be in a B-stage state, the phosphor resin composition is B-staged.

藉此,於第1障壁11之第1開口部13內形成被覆LED2之上表面22及側面23之螢光體層3。 Thereby, the phosphor layer 3 covering the upper surface 22 and the side surface 23 of the LED 2 is formed in the first opening 13 of the first barrier rib 11.

繼而如圖3C之箭頭所示,將第1障壁11自支持板7剝離。此時, 第1障壁11之第1開口部13之側面自螢光體層3之側面33剝離。 Then, as shown by the arrow in FIG. 3C, the first barrier rib 11 is peeled off from the support plate 7. at this time, The side surface of the first opening portion 13 of the first barrier rib 11 is peeled off from the side surface 33 of the phosphor layer 3.

繼而,如圖3D及圖3E所示,將第2障壁12配置於支持板7之上表面。 Then, as shown in FIG. 3D and FIG. 3E, the second barrier rib 12 is placed on the upper surface of the support plate 7.

第2障壁12係除厚度以外,與上述第1障壁11同樣地構成。第2障壁12之厚度係相對於第1障壁11之厚度較厚地形成,具體而言,調整為可嵌入螢光體層3並且可形成透明層4之厚度。第2障壁12之厚度例如為0.1μm以上,較佳為0.2μm以上,又,例如為2μm以下,較佳為1μm以下。 The second barrier rib 12 is configured in the same manner as the first barrier rib 11 except for the thickness. The thickness of the second barrier rib 12 is formed thicker than the thickness of the first barrier rib 11 , specifically, the phosphor layer 3 can be embedded and the thickness of the transparent layer 4 can be formed. The thickness of the second barrier rib 12 is, for example, 0.1 μm or more, preferably 0.2 μm or more, and is, for example, 2 μm or less, preferably 1 μm or less.

圖3D所示,於第2障壁12於俯視時,形成有與螢光體層3之形狀為相同形狀之第2開口部14。 As shown in FIG. 3D, in the second barrier rib 12, a second opening portion 14 having the same shape as that of the phosphor layer 3 is formed in a plan view.

如圖3E所示,於支持板7上,將第2障壁12以螢光體層3被插入至第2開口部14之方式載置於支持板7之上表面。藉此,將螢光體層3嵌入第2開口部14內。 As shown in FIG. 3E, the second barrier rib 12 is placed on the upper surface of the support plate 7 so that the phosphor layer 3 is inserted into the second opening portion 14 on the support plate 7. Thereby, the phosphor layer 3 is fitted into the second opening portion 14.

其後,如圖4F所示,將透明樹脂組合物之清漆滴加(灌注)至螢光體層3之上表面之第2開口部14內。具體而言,以使清漆之液面與第2障壁12之上表面成為同一面之方式將清漆滴加至第2開口部14內。 Thereafter, as shown in FIG. 4F, the varnish of the transparent resin composition is dropped (perfused) into the second opening portion 14 on the upper surface of the phosphor layer 3. Specifically, the varnish is dropped into the second opening portion 14 such that the liquid surface of the varnish and the upper surface of the second barrier rib 12 are flush with each other.

其後,於透明樹脂組合物含有可成為B階段狀態之熱硬化性樹脂組合物之情形時,使透明樹脂組合物熱硬化(具體而言為C階段化)。藉此,將透明層4形成於螢光體層3之上表面。 Then, when the transparent resin composition contains a thermosetting resin composition which can be in a B-stage state, the transparent resin composition is thermally cured (specifically, C-staged). Thereby, the transparent layer 4 is formed on the upper surface of the phosphor layer 3.

於使透明樹脂組合物C階段化時,若螢光體層3之螢光體樹脂組合物為二段反應硬化性樹脂組合物之B階段化狀態,則將其C階段化。 When the transparent resin composition is C-staged, when the phosphor resin composition of the phosphor layer 3 is in the B-staged state of the two-stage reaction curable resin composition, it is C-staged.

其後,如圖4G所示,沿螢光體層3及透明層4與第2障壁12之界面將其等切斷。 Thereafter, as shown in FIG. 4G, the phosphor layer 3 and the interface between the transparent layer 4 and the second barrier rib 12 are cut.

藉此,以由支持板7支持之狀態獲得具備1個LED2、螢光體層3及透明層4之螢光體層密封之LED1。 Thereby, the LED 1 having the phosphor layer sealing of one LED 2, the phosphor layer 3, and the transparent layer 4 is obtained in a state supported by the support plate 7.

繼而,如圖4G之箭頭、假想線及圖4H所示,將螢光體層密封之LED1自支持板7剝離。 Then, as shown by the arrow of FIG. 4G, the imaginary line, and FIG. 4H, the LED1 sealed with the phosphor layer is peeled off from the support plate 7.

其後,根據發光波長或發光效率,對螢光體層密封之LED1進行篩選。 Thereafter, the phosphor layer sealed LED 1 is screened according to the emission wavelength or the luminous efficiency.

其後,如圖4I所示,將螢光體層密封之LED1安裝至基板50。 Thereafter, as shown in FIG. 4I, the phosphor layer-sealed LED 1 is mounted to the substrate 50.

並且,根據圖4A~圖4I之方法,由於無需如第1實施形態般於剝離片材6上暫時製造密封片材5(參照圖2A),故而可由螢光體樹脂組合物之清漆及透明樹脂組合物之清漆簡便地依序形成螢光體層3及透明層4。 Further, according to the method of FIGS. 4A to 4I, since it is not necessary to temporarily manufacture the sealing sheet 5 on the release sheet 6 as in the first embodiment (see FIG. 2A), the varnish and transparent resin of the phosphor resin composition can be used. The varnish of the composition is used to form the phosphor layer 3 and the transparent layer 4 in a simple manner.

<第2實施形態> <Second embodiment>

於第2實施形態中,對與上述第1實施形態相同之構件及步驟賦予同一參照符號,並省略其詳細說明。 In the second embodiment, members and steps that are the same as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[螢光體層密封之LED] [Glow-emitting layer sealed LED]

於第1實施形態中,如圖1所示般露出螢光體層3之側面33。然而,於第2實施形態中,如圖6所示,螢光體層3之側面33被透明層4被覆。 In the first embodiment, the side surface 33 of the phosphor layer 3 is exposed as shown in Fig. 1 . However, in the second embodiment, as shown in FIG. 6, the side surface 33 of the phosphor layer 3 is covered with the transparent layer 4.

即,透明層4被覆螢光體層3之上表面31及側面33。又,透明層4於俯視時,形成為包含螢光體層3在內之形狀。透明層4具有被覆螢光體層3之側面33之側部45。又,透明層4之側部45之下表面41為可與基板50(假想線)接觸之透明側接觸可能面。 That is, the transparent layer 4 covers the upper surface 31 and the side surface 33 of the phosphor layer 3. Further, the transparent layer 4 is formed into a shape including the phosphor layer 3 in plan view. The transparent layer 4 has side portions 45 that cover the side faces 33 of the phosphor layer 3. Further, the lower surface 41 of the side portion 45 of the transparent layer 4 is a transparent side contact surface which can be in contact with the substrate 50 (imaginary line).

並且,透明層4由於具有側部45,故而透明層4之側面43(透明側連結面)於螢光體層3之側面33之外側隔開距離β而對向配置。 Further, since the transparent layer 4 has the side portion 45, the side surface 43 (transparent side connecting surface) of the transparent layer 4 is disposed opposite to the outside of the side surface 33 of the phosphor layer 3 with a distance β therebetween.

透明層4之側面43相對於螢光體層3之側面33所隔開之距離β為透明層4之側部45之左右方向長度及前後方向長度(最小長度)。 The distance β between the side surface 43 of the transparent layer 4 and the side surface 33 of the phosphor layer 3 is the length in the left-right direction and the length in the front-rear direction (minimum length) of the side portion 45 of the transparent layer 4.

距離β可自超過0之範圍內進行適當選擇。 The distance β can be appropriately selected from the range exceeding 0.

於第2實施形態中,較佳為滿足下述(3)'代替於第1實施形態之(1) ~(4)中之(3)。 In the second embodiment, it is preferable to satisfy the following (3)' instead of the first embodiment (1). (3) in ~(4).

(3)'距離α與距離β之和(α+β)例如為50μm以上,較佳為超過50μm,更佳為100μm以上,又,例如為2000μm以下,較佳為1000μm以下。若α+β為上述下限以上,則可防止色均勻性降低或抑制色不均。若α+β為上述上限以下,則可抑制材料之浪費使用。 (3) The sum of the distance α and the distance β (α + β) is, for example, 50 μm or more, preferably more than 50 μm, more preferably 100 μm or more, and further, for example, 2000 μm or less, preferably 1,000 μm or less. When α+β is at least the above lower limit, it is possible to prevent color uniformity from being lowered or to suppress color unevenness. When α+β is at most the above upper limit, wasteful use of the material can be suppressed.

再者,於第1實施形態中,β為0。因此,於本創作中,β較佳為0以上。 Further, in the first embodiment, β is 0. Therefore, in the present creation, β is preferably 0 or more.

[螢光體層密封之LED之製造方法] [Manufacturing method of LED for phosphor layer sealing]

繼而,參照圖7A~圖8L,對製造圖6所示之螢光體層密封之LED之方法、及使用螢光體層密封之LED製造LED裝置之方法進行說明。 Next, a method of manufacturing the phosphor layer-sealed LED shown in FIG. 6 and a method of manufacturing an LED device using the phosphor layer-sealed LED will be described with reference to FIGS. 7A to 8L.

螢光體層密封之LED1之製造方法包括如下步驟:製造具備螢光體層3之螢光密封片材15之步驟(螢光體層準備步驟之一例,參照圖7A)、以使螢光體層3被覆複數個LED2之方式配置螢光密封片材15之步驟(螢光體層配置步驟之一例,參照圖7B)、將相對於LED2位於遠距離之螢光體層3去除之步驟(單片化/去除步驟之一例,參照圖7D)、製造具備透明層4之透明片材18之步驟(透明層準備步驟之一例,參照圖8G)、將螢光體層密封之LED1再配置於第2支持板17之步驟(參照圖8G)、及將透明片材18配置於螢光體層3上之步驟(透明層配置步驟之一例,圖8H)。 The method for producing the phosphor layer sealed LED 1 includes the step of producing the fluorescent sealing sheet 15 having the phosphor layer 3 (an example of a phosphor layer preparing step, see FIG. 7A) so that the phosphor layer 3 is coated with plural numbers. The step of arranging the fluorescent sealing sheet 15 in the form of LEDs 2 (an example of the phosphor layer arranging step, see FIG. 7B) and the step of removing the phosphor layer 3 located at a long distance with respect to the LED 2 (the singulation/removal step) For example, referring to FIG. 7D), a step of manufacturing the transparent sheet 18 having the transparent layer 4 (an example of a transparent layer preparation step, see FIG. 8G), and a step of rearranging the phosphor layer-sealed LED 1 on the second support sheet 17 ( 8G) and the step of disposing the transparent sheet 18 on the phosphor layer 3 (an example of a transparent layer disposing step, FIG. 8H).

於該方法中,首先如圖7A所示,準備複數個LED。 In this method, first, as shown in FIG. 7A, a plurality of LEDs are prepared.

另外,準備具備螢光體層3之螢光密封片材15。 Further, a fluorescent sealing sheet 15 having the phosphor layer 3 is prepared.

準備螢光密封片材15時,首先如圖7A所示,準備剝離片材6。 When the fluorescent sealing sheet 15 is prepared, first, as shown in FIG. 7A, the release sheet 6 is prepared.

繼而,將螢光體層3呈片狀形成於剝離片材6之下表面。螢光體層3之形成方法與第1實施形態中之螢光體層3之形成方法相同。 Then, the phosphor layer 3 is formed in a sheet shape on the lower surface of the release sheet 6. The method of forming the phosphor layer 3 is the same as the method of forming the phosphor layer 3 in the first embodiment.

藉此,準備具備剝離片材6與形成於剝離片材6之下表面之螢光體層3之螢光密封片材15。 再者,螢光密封片材15不具有以下說明之透明層4(參照圖8G)。較佳為螢光密封片材15包含剝離片材6與螢光體層3。 Thereby, the fluorescent sealing sheet 15 which has the peeling sheet 6 and the phosphor layer 3 formed in the lower surface of the peeling sheet 6 is prepared. Further, the fluorescent sealing sheet 15 does not have the transparent layer 4 described below (see FIG. 8G). Preferably, the fluorescent sealing sheet 15 comprises a release sheet 6 and a phosphor layer 3.

繼而如圖7B所示,藉由螢光體層3密封複數個LED2。即,對支持LED2之支持板7壓接螢光密封片材15。藉此,螢光密封片材15之下表面32埋設複數個LED2,形成為與複數個LED2之表面對應之形狀。另一方面,螢光密封片材15之螢光體層3之上表面31係形成為平坦狀。再者,螢光體層3被覆LED2之側面23及上表面22。 Then, as shown in FIG. 7B, a plurality of LEDs 2 are sealed by the phosphor layer 3. That is, the fluorescent sealing sheet 15 is crimped to the support plate 7 supporting the LED 2. Thereby, a plurality of LEDs 2 are embedded in the lower surface 32 of the fluorescent sealing sheet 15, and are formed in a shape corresponding to the surfaces of the plurality of LEDs 2. On the other hand, the upper surface 31 of the phosphor layer 3 of the fluorescent sealing sheet 15 is formed into a flat shape. Furthermore, the phosphor layer 3 covers the side surface 23 and the upper surface 22 of the LED 2.

其後,於該方法中,如圖7C所示,將剝離片材6自螢光體層3剝離。 Thereafter, in this method, as shown in FIG. 7C, the release sheet 6 is peeled off from the phosphor layer 3.

繼而,於該方法中,如圖7D所示,將相對於LED2位於遠距離之螢光體層3去除。 Then, in this method, as shown in FIG. 7D, the phosphor layer 3 located at a long distance with respect to the LED 2 is removed.

具體而言,藉由具有特定寬度(壁厚)之圓盤狀之晶圓切割鋸(切割刀片)9,對相對於LED2位於遠距離之螢光體層3進行切削。藉此,於螢光體層3,將側部35之長度α調節為所需尺寸。即,以成為特定尺寸之方式對螢光體層3進行外形加工。 Specifically, the phosphor layer 3 located at a long distance with respect to the LED 2 is cut by a disk-shaped wafer dicing saw (cutting blade) 9 having a specific width (wall thickness). Thereby, the length α of the side portion 35 is adjusted to a desired size in the phosphor layer 3. That is, the phosphor layer 3 is subjected to outer shape processing so as to have a specific size.

同時將螢光體層密封之LED1單片化。即,以使螢光體層密封之LED1單片化之方式切斷螢光密封片材15。此時,使被覆LED2之側面23之螢光體層3殘留。 At the same time, the phosphor layer sealed LED1 is singulated. In other words, the fluorescent sealing sheet 15 is cut so that the LED 1 in which the phosphor layer is sealed is singulated. At this time, the phosphor layer 3 covering the side surface 23 of the LED 2 remains.

繼而,如圖7E所示,其後,將經單片化之螢光體層密封之LED1自支持板7剝離。 Then, as shown in FIG. 7E, thereafter, the LED 1 sealed by the singulated phosphor layer is peeled off from the support plate 7.

藉此,獲得具備LED2與具有特定尺寸之螢光體層3之螢光體層密封之LED1。於該第2實施形態中,以圖7E之假想線及圖7F之實線所示之螢光體層密封之LED1不具備透明層4。即,該螢光體層密封之LED1較佳為包含LED2與螢光體層3。 Thereby, the LED 1 having the phosphor layer sealed with the LED 2 and the phosphor layer 3 having a specific size is obtained. In the second embodiment, the LED 1 sealed with the phosphor layer shown by the imaginary line of FIG. 7E and the solid line of FIG. 7F does not have the transparent layer 4. That is, the phosphor layer sealed LED 1 preferably includes the LED 2 and the phosphor layer 3.

於該方法中,繼而如圖8G所示,將複數個螢光體層密封之LED1於前後方向及左右方向相互隔開間隔地排列配置於第2支持板17。 即,對第2支持板17再配置螢光體層密封之LED1。 In this method, as shown in FIG. 8G, the LEDs 1 in which a plurality of phosphor layers are sealed are arranged in the second support plate 17 at intervals in the front-rear direction and the left-right direction. That is, the phosphor layer sealed LED 1 is further disposed on the second support plate 17.

第2支持板17具有與上述支持板7相同之構成。 The second support plate 17 has the same configuration as the above-described support plate 7.

另外,如圖8G所示,準備具備透明層4之透明片材18。 Further, as shown in FIG. 8G, a transparent sheet 18 having a transparent layer 4 is prepared.

準備透明片材18時,首先如圖8G所示,將透明層4呈片狀形成於第2剝離片材19之下表面。第2剝離片材19具有與上述剝離片材6相同之構成。透明層4之形成方法與第1實施形態中之螢光體層3之形成方法相同。第2透明組合物較佳為含有填料。 When the transparent sheet 18 is prepared, first, as shown in FIG. 8G, the transparent layer 4 is formed in a sheet shape on the lower surface of the second release sheet 19. The second release sheet 19 has the same configuration as the release sheet 6 described above. The method of forming the transparent layer 4 is the same as the method of forming the phosphor layer 3 in the first embodiment. The second transparent composition preferably contains a filler.

藉此,準備具備第2剝離片材19與形成於第2剝離片材19之下表面之透明層4之透明片材18。 Thereby, the transparent sheet 18 which has the 2nd peeling sheet 19 and the transparent layer 4 formed in the lower surface of the 2nd peeling sheet 19 is prepared.

再者,透明片材18不具有上述螢光體層3。較佳為透明片材18包含第2剝離片材19與透明層4。 Furthermore, the transparent sheet 18 does not have the above-described phosphor layer 3. It is preferable that the transparent sheet 18 includes the second release sheet 19 and the transparent layer 4.

繼而,於該方法中,如圖8H所示,藉由透明層4將被覆複數個LED2之複數個螢光體層3被覆。 Then, in this method, as shown in FIG. 8H, a plurality of phosphor layers 3 covering a plurality of LEDs 2 are covered by the transparent layer 4.

具體而言,對支持螢光體層密封之LED1之第2支持板17壓接第2剝離片材19。 Specifically, the second release sheet 19 is pressure-bonded to the second support plate 17 of the LED 1 that supports the phosphor layer sealing.

再者,於透明樹脂組合物含有B階段(半硬化)狀態之苯基系聚矽氧樹脂組合物之情形時進行熱壓接。藉此,B階段之苯基系聚矽氧樹脂組合物藉由加熱而暫時塑化,藉此,透明樹脂組合物被填充於複數個螢光體層3之間。其後使透明樹脂組合物完全硬化。 Further, in the case where the transparent resin composition contains a phenyl-based polyoxyxene resin composition in a B-stage (semi-hardened) state, thermocompression bonding is performed. Thereby, the B-stage phenyl-based polyoxyxene resin composition is temporarily plasticized by heating, whereby the transparent resin composition is filled between the plurality of phosphor layers 3. Thereafter, the transparent resin composition is completely cured.

繼而如圖8I所示,將第2剝離片材19自透明層4剝離。 Then, as shown in FIG. 8I, the second release sheet 19 is peeled off from the transparent layer 4.

藉此,如圖8I所示,藉由積層有透明層4之螢光體層3,而以由第2支持板17支持之狀態獲得密封有複數個LED2之密封LED集合體8。 Thereby, as shown in FIG. 8I, the sealed LED assembly 8 in which a plurality of LEDs 2 are sealed is obtained in a state of being supported by the second support plate 17 by laminating the phosphor layer 3 of the transparent layer 4.

繼而如圖8J所示,以使複數個LED2單片化之方式切斷密封LED集合體8。 Then, as shown in FIG. 8J, the sealed LED assembly 8 is cut so that a plurality of LEDs 2 are singulated.

繼而如圖8J之箭頭及圖8K所示,將複數個螢光體層密封之LED1自支持板7剝離,獲得螢光體層密封之LED1。 Then, as shown by the arrow of FIG. 8J and FIG. 8K, the LED1 sealed with a plurality of phosphor layers is peeled off from the support plate 7, and the phosphor layer-sealed LED 1 is obtained.

其後,如圖8L所示,將螢光體層密封之LED1安裝至基板50,獲得LED裝置60。具體而言,參照圖6之假想線般,使透明層4之側部45之下表面41接觸基板50。 Thereafter, as shown in FIG. 8L, the phosphor layer-sealed LED 1 is mounted on the substrate 50 to obtain the LED device 60. Specifically, the lower surface 41 of the side portion 45 of the transparent layer 4 is brought into contact with the substrate 50 as in the imaginary line of FIG.

[第2實施形態之作用效果] [Effects of the second embodiment]

並且,於該螢光體層密封之LED1中,如圖6所示,透明層4具有被覆螢光體層3之側面33之側部45,故而與第1實施形態同樣地可使透明樹脂組合物(透明層4)與空氣之界面遠離(離開)作為光吸收體之基板50或LED2(LED2與螢光體層3之界面)。因此,自LED2朝上側發光並經螢光體層3波長轉換之光與未經螢光體層3波長轉換而透過螢光體層3之光即便於透明樹脂組合物(透明層4)與空氣之界面發生反射亦不易回射至基板50或LED2(光吸收體),故而能夠使螢光體層密封之LED1之發光強度提高。 Further, in the LED 1 in which the phosphor layer is sealed, as shown in FIG. 6, the transparent layer 4 has the side portion 45 covering the side surface 33 of the phosphor layer 3, so that the transparent resin composition can be obtained in the same manner as in the first embodiment. The transparent layer 4) is away from (away from) the interface of the air as the substrate 50 of the light absorber or the LED 2 (the interface between the LED 2 and the phosphor layer 3). Therefore, light that is emitted from the LED 2 toward the upper side and wavelength-converted by the phosphor layer 3 and light that has not been wavelength-converted by the phosphor layer 3 and transmitted through the phosphor layer 3 occurs even at the interface between the transparent resin composition (transparent layer 4) and the air. Since the reflection is not easily returned to the substrate 50 or the LED 2 (light absorber), the luminous intensity of the LED 1 sealed by the phosphor layer can be improved.

另一方面,於該第2實施形態中,如圖8G所示,其後將配置有螢光體層3之螢光體層密封之LED1再配置於與支持板7不同之另一支持台、即第2支持板17,繼而,如圖8H所示,藉由透明層4被覆螢光體層3。 On the other hand, in the second embodiment, as shown in FIG. 8G, the LED 1 in which the phosphor layer of the phosphor layer 3 is sealed is disposed on the other support table different from the support plate 7, that is, 2 Support plate 17, and then, as shown in Fig. 8H, the phosphor layer 3 is covered by the transparent layer 4.

相對於此,於第1實施形態之方法中,如上所述與第2實施形態不同,無需將配置有螢光體層3之LED2再配置於第2支持板17。因此,藉由簡便方法而製造螢光體層密封之LED1。 On the other hand, in the method of the first embodiment, as described above, unlike the second embodiment, it is not necessary to reposition the LEDs 2 on which the phosphor layer 3 is disposed on the second support plate 17. Therefore, the phosphor layer-sealed LED 1 is manufactured by a simple method.

又,可藉由切斷等簡便之方法,於螢光體層密封之LED1中之螢光體層3與透明層4分別形成側面33與側面43。 Further, the phosphor layer 3 and the transparent layer 4 in the phosphor-sealed LED 1 can be formed into the side surface 33 and the side surface 43, respectively, by a simple method such as cutting.

如圖7A所示,該螢光體層密封之LED1之製造方法包括準備具備片狀之螢光體層3之螢光密封片材15之螢光體層準備步驟、及以被覆LED2之方式配置片狀之螢光體層3之螢光體層配置步驟,故而使用片狀之螢光體層3,可簡便地製造發光強度優異之螢光體層密封之LED1。 As shown in FIG. 7A, the method for manufacturing the phosphor layer-sealed LED 1 includes a phosphor layer preparation step of preparing a fluorescent sealing sheet 15 having a sheet-like phosphor layer 3, and a sheet-like shape in which the LED 2 is covered. Since the phosphor layer 3 of the phosphor layer 3 is disposed, the phosphor layer 3 having excellent luminous intensity can be easily produced by using the flake phosphor layer 3.

又,根據該螢光體層密封之LED1之製造方法,如圖7D所示,於單片化/去除步驟中,在螢光體層配置步驟之後且透明層配置步驟之前,將螢光體層3對應於複數個LED2進行單片化之同時,將相對於LED2位於遠距離之螢光體層3去除,故而可以較少之步驟數製造具有所需尺寸之螢光體層密封之LED1。 Further, according to the method of manufacturing the phosphor layer sealed LED 1, as shown in FIG. 7D, in the singulation/removal step, after the phosphor layer arranging step and before the transparent layer arranging step, the phosphor layer 3 corresponds to When a plurality of LEDs 2 are singulated, the phosphor layer 3 located at a long distance with respect to the LED 2 is removed, so that the LED 1 having the desired size of the phosphor layer seal can be manufactured in a small number of steps.

進而,根據該螢光體層密封之LED1之製造方法,如圖7D所示,於單片化/去除步驟中,使被覆LED2之側面23之螢光體層3殘留,故而可簡便地製造具備所需尺寸之螢光體層3之螢光體層密封之LED1。 Further, according to the method for manufacturing the phosphor layer sealed by the phosphor layer, as shown in FIG. 7D, in the singulation/removal step, the phosphor layer 3 covering the side surface 23 of the LED 2 remains, so that it can be easily manufactured. The phosphor layer of the phosphor layer 3 of the size is sealed by the LED1.

又,根據該螢光體層密封之LED1之製造方法,如圖8G所示般使用片狀之透明層4,故而可簡便地製造發光強度優異之螢光體層密封之LED1。 Further, according to the method for producing the LED 1 in which the phosphor layer is sealed, since the sheet-like transparent layer 4 is used as shown in FIG. 8G, the phosphor layer-sealed LED 1 excellent in luminous intensity can be easily produced.

[變化例] [variation]

於第2實施形態中,如圖6所示,螢光體層3之收容部30之周圍之下表面32、及透明層4之側部45之下表面41分別係以可與基板50接觸之螢光體側接觸可能面及透明側接觸可能面之形式構成。然而,例如圖9所示,可將螢光體層3之收容部30之周圍之下表面32、及透明層4之側部45之下表面41之兩者以可與基板50隔開間隔之間隔確保可能面之形式構成。 In the second embodiment, as shown in Fig. 6, the lower surface 32 of the periphery of the accommodating portion 30 of the phosphor layer 3 and the lower surface 41 of the side portion 45 of the transparent layer 4 are respectively attached to the substrate 50. The light body side contact possible surface and the transparent side contact possible surface form. However, as shown in FIG. 9, for example, the peripheral lower surface 32 of the accommodating portion 30 of the phosphor layer 3 and the lower surface 41 of the side portion 45 of the transparent layer 4 may be spaced apart from each other by the substrate 50. Make sure that the form of the face is made up.

如圖9所示,螢光體層3之收容部30之周圍之下表面32、及透明層4之側部45之下表面41位於較LED2之下表面21更靠上側部分。具體而言,螢光體層3之收容部30之周圍之下表面32、及透明層4之側部45之下表面41於在面方向上投影時,位於LED2之下表面21及上表面22之間。即,螢光體層3之收容部30之周圍之下表面32、及透明層4之側部45之下表面41於在前後方向及左右方向上投影時,配置於LED2之側面23所包含之位置。 As shown in FIG. 9, the peripheral lower surface 32 of the accommodating portion 30 of the phosphor layer 3 and the lower surface 41 of the side portion 45 of the transparent layer 4 are located on the upper side portion of the lower surface 21 of the LED 2. Specifically, the lower surface 32 of the surrounding portion of the accommodating portion 30 of the phosphor layer 3 and the lower surface 41 of the side portion 45 of the transparent layer 4 are located on the lower surface 21 and the upper surface 22 of the LED 2 when projected in the plane direction. between. In other words, when the lower surface 32 of the accommodating portion 30 of the phosphor layer 3 and the lower surface 41 of the side portion 45 of the transparent layer 4 are projected in the front-rear direction and the left-right direction, they are disposed at the side of the side surface 23 of the LED 2. .

又,於第2實施形態中,如圖7B所示,將螢光密封片材15之螢光 體層3之上表面31形成為平坦狀,但亦可例如圖10B所示,將螢光體層3之上表面31形成為對應於複數個LED2之表面之凹凸形狀。 Further, in the second embodiment, as shown in Fig. 7B, the fluorescent sealing sheet 15 is fluorescent. The upper surface 31 of the bulk layer 3 is formed in a flat shape. However, as shown in FIG. 10B, for example, the upper surface 31 of the phosphor layer 3 may be formed to have a concavo-convex shape corresponding to the surface of the plurality of LEDs 2.

此種變化例包括如下步驟:製造具備螢光體層3之螢光密封片材15之步驟(螢光體層準備步驟之一例,參照圖10A)、以使螢光體層3被覆複數個LED2之方式配置螢光密封片材15之步驟(螢光體層配置步驟之一例,參照圖10B)、將相對於LED2位於遠距離之螢光體層3去除之步驟(去除步驟之一例,參照圖10D)、製造具備透明層4之透明片材18之步驟(透明層準備步驟之一例,參照圖8G)、將螢光體層密封之LED1再配置於第2支持板17之步驟(參照圖8G)、及將透明片材18配置於螢光體層3上之步驟(圖8H)。 Such a modification includes the steps of producing a fluorescent sealing sheet 15 having the phosphor layer 3 (an example of a phosphor layer preparing step, see FIG. 10A), and arranging the phosphor layer 3 with a plurality of LEDs 2 The step of the fluorescent sealing sheet 15 (an example of the phosphor layer arranging step, see FIG. 10B) and the step of removing the phosphor layer 3 located at a long distance from the LED 2 (an example of the removing step, see FIG. 10D) The step of transparent sheet 18 of transparent layer 4 (an example of transparent layer preparation step, see FIG. 8G), the step of rearranging LED 1 in which phosphor layer is sealed on second support plate 17 (see FIG. 8G), and the transparent sheet The step of disposing the material 18 on the phosphor layer 3 (Fig. 8H).

於該方法中,首先如圖10A所示,準備複數個LED。 In this method, first, as shown in FIG. 10A, a plurality of LEDs are prepared.

另外,準備具備螢光體層3之螢光密封片材15。準備螢光密封片材15時,首先如圖10A所示,準備剝離片材6。 Further, a fluorescent sealing sheet 15 having the phosphor layer 3 is prepared. When the fluorescent sealing sheet 15 is prepared, first, as shown in FIG. 10A, the release sheet 6 is prepared.

繼而,將螢光體層3形成於剝離片材6之下表面。藉此,準備具備剝離片材6與形成於剝離片材6之下表面之螢光體層3之螢光密封片材15。 Then, the phosphor layer 3 is formed on the lower surface of the release sheet 6. Thereby, the fluorescent sealing sheet 15 which has the peeling sheet 6 and the phosphor layer 3 formed in the lower surface of the peeling sheet 6 is prepared.

繼而,如圖10B所示,藉由螢光體層3密封複數個LED2。即,對支持LED2之支持板7壓接螢光密封片材15。此時,藉由配置於剝離片材6之上側且包含具備與複數個LED2對應之凹部之上模具與平板狀之下模具之壓製機,對LED2及支持板7壓接螢光密封片材15。螢光體層3藉由上述壓製而具有對應於複數個LED2之複數個凸部。剝離片材6被覆於螢光體層3之表面(包含突部之表面之側面)。 Then, as shown in FIG. 10B, a plurality of LEDs 2 are sealed by the phosphor layer 3. That is, the fluorescent sealing sheet 15 is crimped to the support plate 7 supporting the LED 2. At this time, the fluorescent sealing sheet 15 is crimped to the LED 2 and the support plate 7 by being disposed on the upper side of the release sheet 6 and including a press having a concave upper mold and a flat lower mold corresponding to the plurality of LEDs 2. . The phosphor layer 3 has a plurality of convex portions corresponding to the plurality of LEDs 2 by the above pressing. The release sheet 6 is coated on the surface of the phosphor layer 3 (the side surface including the surface of the protrusion).

其後,於該方法中,如圖10C所示,將剝離片材6自螢光體層3剝離。 Thereafter, in this method, as shown in FIG. 10C, the release sheet 6 is peeled off from the phosphor layer 3.

繼而,於該方法中,如圖10D所示,將螢光體層3切斷,繼而,如圖10E所示,單片化成螢光體層密封之LED1。其後,將經單片化之 螢光體層密封之LED1自支持板7剝離。 Then, in this method, as shown in Fig. 10D, the phosphor layer 3 is cut, and then, as shown in Fig. 10E, the LED 1 sealed into a phosphor layer is singulated. Thereafter, it will be singulated The phosphor layer sealed LED 1 is peeled off from the support plate 7.

即,如圖10D所示,以成為特定尺寸之方式對螢光體層3進行外形加工。藉此,將相對於LED2位於遠距離之螢光體層3去除。 That is, as shown in FIG. 10D, the phosphor layer 3 is subjected to outer shape processing so as to have a specific size. Thereby, the phosphor layer 3 located at a long distance with respect to the LED 2 is removed.

藉此,如圖10E所示,獲得具備LED2與具有特定尺寸之螢光體層3之螢光體層密封之LED1。於該第2實施形態中,以圖10D之假想線及圖10E之實線所示之螢光體層密封之LED1不具備透明層4。即,該螢光體層密封之LED1較佳為包含LED2與螢光體層3。 Thereby, as shown in FIG. 10E, the LED 1 having the phosphor layer sealed with the LED 2 and the phosphor layer 3 having a specific size is obtained. In the second embodiment, the LED 1 sealed with the phosphor layer shown by the imaginary line of Fig. 10D and the solid line of Fig. 10E does not have the transparent layer 4. That is, the phosphor layer sealed LED 1 preferably includes the LED 2 and the phosphor layer 3.

其後,以與第2實施形態(圖8G~圖8L)相同之方式將透明層4積層於螢光體層3。 Thereafter, the transparent layer 4 is laminated on the phosphor layer 3 in the same manner as in the second embodiment (Fig. 8G to Fig. 8L).

具體而言,如圖8G所示,首先將複數個螢光體層密封之LED1於前後方向及左右方向相互隔開間隔地排列配置於第2支持板17。另外,如圖8G所示,準備具備透明層4之透明片材18。 Specifically, as shown in FIG. 8G, first, the LEDs 1 sealed with a plurality of phosphor layers are arranged side by side in the front-rear direction and the left-right direction at intervals on the second support plate 17. Further, as shown in FIG. 8G, a transparent sheet 18 having a transparent layer 4 is prepared.

繼而,如圖8H所示,藉由透明層4將被覆複數個LED2之複數個螢光體層3被覆。具體而言,藉由具備下模具與下模具之平板壓製機,對螢光體層3及第2支持板17壓接透明層4。 Then, as shown in FIG. 8H, a plurality of phosphor layers 3 covering a plurality of LEDs 2 are covered by the transparent layer 4. Specifically, the transparent layer 4 is pressure-bonded to the phosphor layer 3 and the second support plate 17 by a flat press equipped with a lower mold and a lower mold.

繼而,如圖8I所示,將第2剝離片材19自透明層4剝離。繼而,如圖8J所示,以使複數個LED2單片化之方式切斷密封LED集合體8。繼而,如圖8J之箭頭及圖8K所示,將複數個螢光體層密封之LED1自支持板7剝離,獲得螢光體層密封之LED1。其後,如圖8L所示,將螢光體層密封之LED1安裝至基板50,獲得LED裝置60。 Then, as shown in FIG. 8I, the second release sheet 19 is peeled off from the transparent layer 4. Then, as shown in FIG. 8J, the sealed LED assembly 8 is cut so that a plurality of LEDs 2 are singulated. Then, as shown by the arrow of FIG. 8J and FIG. 8K, the LED1 sealed with a plurality of phosphor layers is peeled off from the support plate 7, and the phosphor layer-sealed LED 1 is obtained. Thereafter, as shown in FIG. 8L, the phosphor layer-sealed LED 1 is mounted on the substrate 50 to obtain the LED device 60.

又,於第2實施形態中,如圖8G所示,首先準備具備透明層4之透明片材18,其後藉由片狀之透明層4將被覆複數個LED2之複數個螢光體層3被覆,但亦可例如參照圖8I般,由透明樹脂組合物(由其所製備之清漆、粉末、錠劑等)藉由例如灌注、轉移成形、壓縮成形等,以被覆LED2之方式直接於第2支持板17上片狀成形透明層4。 Further, in the second embodiment, as shown in Fig. 8G, first, the transparent sheet 18 having the transparent layer 4 is prepared, and then the plurality of phosphor layers 3 covering the plurality of LEDs 2 are covered by the sheet-like transparent layer 4. However, for example, as shown in FIG. 8I, the transparent resin composition (varnish, powder, tablet, etc. prepared therefrom) is directly coated on the second layer by, for example, pouring, transfer molding, compression molding, or the like. The sheet 17 is formed into a transparent layer 4 on the support sheet 17.

<第3實施形態> <Third embodiment>

於第3實施形態中,對與上述第1實施形態相同之構件及步驟賦予同一參照符號,並省略其詳細說明。 In the third embodiment, members and steps that are the same as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[螢光體層密封之LED] [Glow-emitting layer sealed LED]

如圖11所示,螢光體層3於其周端部具有凸緣部36。 As shown in FIG. 11, the phosphor layer 3 has a flange portion 36 at its peripheral end portion.

凸緣部36係自被覆LED2之側面23之部分朝面方向外側突出之突出部。螢光體層3之凸緣部36之上表面位於螢光體層3中自被覆LED2之上表面22之部分向下側進一步下降之位置,因此,凸緣部36之上表面與上述部分之上表面31之間形成有階差。凸緣部36之外周面37自透明層4之側面43朝外側露出。凸緣部36之外周面37與透明層4之側面43於上下方向上形成為同一面。 The flange portion 36 is a protruding portion that protrudes outward in the surface direction from a portion of the side surface 23 covering the LED 2. The upper surface of the flange portion 36 of the phosphor layer 3 is located at a position where the portion of the phosphor layer 3 from the upper surface 22 of the coated LED 2 is further lowered to the lower side, and therefore, the upper surface of the flange portion 36 and the upper surface of the above portion There is a step difference between 31. The outer peripheral surface 37 of the flange portion 36 is exposed to the outside from the side surface 43 of the transparent layer 4. The outer peripheral surface 37 of the flange portion 36 and the side surface 43 of the transparent layer 4 are formed in the same plane in the vertical direction.

凸緣部36之上表面39與透明層4之側部45之下表面41接觸。 The upper surface 39 of the flange portion 36 is in contact with the lower surface 41 of the side portion 45 of the transparent layer 4.

[螢光體層密封之LED之製造方法及LED裝置之製造方法] [Manufacturing Method of LED for Phosphor Layer Sealing and Manufacturing Method of LED Device]

繼而,參照圖12A~圖13I,對製造圖11所示之螢光體層密封之LED之方法、及使用螢光體層密封之LED製造LED裝置之方法進行說明。 Next, a method of manufacturing the phosphor layer-sealed LED shown in FIG. 11 and a method of manufacturing an LED device using the phosphor layer-sealed LED will be described with reference to FIGS. 12A to 13I.

該螢光體層密封之LED1之製造方法包括如下步驟:製造螢光密封片材15之步驟(參照圖12A)、以使螢光體層3被覆複數個LED2之方式配置螢光密封片材15之步驟(參照圖12B)、於所鄰接之LED2間之螢光體層3形成凹部24之步驟(參照圖12C)、製造具備透明層4之透明片材18之步驟(參照圖12D)、於螢光體層3上配置透明片材18之步驟(參照圖13E)、及將相對於LED2位於遠距離之螢光體層3及透明層4切斷而將螢光體層密封之LED1單片化之步驟(參照圖13F)。 The method for manufacturing the phosphor layer-sealed LED 1 includes the steps of: manufacturing a fluorescent sealing sheet 15 (see FIG. 12A), and disposing the fluorescent sealing sheet 15 such that the phosphor layer 3 is coated with a plurality of LEDs 2. (Refer to FIG. 12B), a step of forming the concave portion 24 in the phosphor layer 3 between the adjacent LEDs 2 (see FIG. 12C), a step of manufacturing the transparent sheet 18 having the transparent layer 4 (see FIG. 12D), and a phosphor layer The step of arranging the transparent sheet 18 on the third side (see FIG. 13E) and the step of cutting the phosphor layer 3 and the transparent layer 4 located at a long distance from the LED 2 to singulate the LED layer sealed by the phosphor layer (see FIG. 13F).

如圖12B之箭頭所示,對支持板7配置螢光密封片材15後,將剝離片材6剝離。 As shown by the arrow in Fig. 12B, after the fluorescent sealing sheet 15 is placed on the support sheet 7, the release sheet 6 is peeled off.

於螢光體層3之上表面具有平坦之表面。 The surface on the upper surface of the phosphor layer 3 has a flat surface.

如圖12C所示,於螢光體層3形成凹部24時,將相對於LED2位於 遠距離之螢光體層3去除。 As shown in FIG. 12C, when the concave portion 24 is formed on the phosphor layer 3, it will be located relative to the LED 2 The distant phosphor layer 3 is removed.

具體而言,藉由晶圓切割鋸9,將相對於LED2位於遠距離之螢光體層3之上端部半切。 Specifically, the upper end portion of the phosphor layer 3 located at a long distance with respect to the LED 2 is half-cut by the wafer dicing saw 9.

藉由形成凹部24,而於螢光體層3形成凸緣部36。 The flange portion 36 is formed in the phosphor layer 3 by forming the concave portion 24.

其後,如圖13E所示,將透明片材18之透明層4配置於螢光體層3上。透明層4較佳為就獲得優異之氣體透過率之觀點而言,較佳為包含含有甲基系聚矽氧樹脂組合物之透明樹脂組合物。 Thereafter, as shown in FIG. 13E, the transparent layer 4 of the transparent sheet 18 is placed on the phosphor layer 3. The transparent layer 4 preferably contains a transparent resin composition containing a methyl polyoxyethylene resin composition from the viewpoint of obtaining an excellent gas permeability.

繼而,如圖13F所示,將相對於LED2位於遠距離之螢光體層3及透明層4切斷。 Then, as shown in FIG. 13F, the phosphor layer 3 and the transparent layer 4 which are located at a long distance with respect to the LED 2 are cut.

藉此,如圖13G所示,以由第2支持板7支持之狀態獲得複數個螢光體層密封之LED1。 Thereby, as shown in FIG. 13G, a plurality of phosphor layer-sealed LEDs 1 are obtained in a state supported by the second support plate 7.

其後,如圖13H所示,將複數個螢光體層密封之LED1轉印至轉印片材25。 Thereafter, as shown in FIG. 13H, a plurality of phosphor layer-sealed LEDs 1 are transferred to the transfer sheet 25.

其後,如圖13I所示,將螢光體層密封之LED1自轉印片材25再轉印至基板50,而將螢光體層密封之LED1安裝至基板50。藉此,獲得LED裝置60。 Thereafter, as shown in FIG. 13I, the phosphor layer-sealed LED 1 is retransferred from the transfer sheet 25 to the substrate 50, and the phosphor layer-sealed LED 1 is mounted to the substrate 50. Thereby, the LED device 60 is obtained.

[第3實施形態之作用效果] [Effects of the third embodiment]

於該螢光體層密封之LED1中,如圖11所示,收容部30之內周面38被覆LED2之側面23並且螢光體層3之凸緣部36之外周面37朝外側露出。因此,自LED2朝外側發出之光藉由螢光體層3之凸緣部36而被充分地波長轉換,另一方面自LED2朝上方發出之光經由螢光體層3而波長轉換之光與未波長轉換而透過螢光體層3之光可於透明層4中進行適當混合。其結果為,螢光體層密封之LED1之配光性(色不均之抑制)優異。 In the LED 1 in which the phosphor layer is sealed, as shown in FIG. 11, the inner peripheral surface 38 of the accommodating portion 30 covers the side surface 23 of the LED 2, and the outer peripheral surface 37 of the flange portion 36 of the phosphor layer 3 is exposed to the outside. Therefore, the light emitted from the LED 2 toward the outside is sufficiently wavelength-converted by the flange portion 36 of the phosphor layer 3, and the light emitted upward from the LED 2 is wavelength-converted by the phosphor layer 3 and the wavelength is not converted. The light converted through the phosphor layer 3 can be appropriately mixed in the transparent layer 4. As a result, the light-emitting property (inhibition of color unevenness) of the LED 1 sealed by the phosphor layer is excellent.

又,透明層4所含有之甲基系聚矽氧樹脂組合物其感壓接著力(黏著力)高於苯基系聚矽氧樹脂組合物。因此,第2實施形態之圖7A~圖 8K所示之方法中,於圖8H之步驟中,若藉由上述透明層4將露出第2支持板17之上表面之複數個LED2被覆,則透明層4會以相對較高之感壓接著力(黏著力)感壓接著(黏著)於第2支持板17之上表面。因此,存在其後無法順利地轉印至轉印片材25(參照圖13G及圖13H)之情形(即,透明層4不會自第2支持板17之上表面剝離之情形)。 Moreover, the methyl-based polyoxyxene resin composition contained in the transparent layer 4 has a pressure-sensitive adhesive force (adhesion) higher than that of the phenyl-based polyoxymethylene resin composition. Therefore, FIG. 7A to FIG. 2 of the second embodiment In the method shown in FIG. 8H, if a plurality of LEDs 2 exposing the upper surface of the second support plate 17 are covered by the transparent layer 4, the transparent layer 4 is pressed with a relatively high pressure. The force (adhesion) pressure is then applied (adhered) to the upper surface of the second support plate 17. Therefore, there is a case where the transfer sheet 25 cannot be smoothly transferred (see FIGS. 13G and 13H) (that is, the transparent layer 4 does not peel off from the upper surface of the second support plate 17).

然而,於第3實施形態之圖12A~圖13I所示之方法中,透明層不接觸(感壓接著)支持板7之上表面,故而可防止透明層4感壓接著(黏著)於支持板7。 However, in the method shown in FIGS. 12A to 13I of the third embodiment, the transparent layer does not contact (pressure-sensitive) the upper surface of the support plate 7, so that the transparent layer 4 can be prevented from being pressed (adhered) to the support plate. 7.

進而,該方法無需如第2實施形態般包括圖8G表示之將螢光體層密封之LED1再配置於第2支持板17之步驟。因此,可減少製造步驟數,從而降低製造成本。 Further, this method does not need to include the step of rearranging the phosphor layer-sealed LED 1 on the second support plate 17 as shown in FIG. 8G as in the second embodiment. Therefore, the number of manufacturing steps can be reduced, thereby reducing the manufacturing cost.

[變化例] [variation]

螢光體層密封之LED1之製造方法之變化例不包括圖7D表示之將相對於LED2位於遠距離之螢光體層3去除之步驟、及圖8G表示之將螢光體層密封之LED1再配置於第2支持板17之步驟,除此以外與第2實施形態之製造方法相同。 A variation of the method of manufacturing the phosphor layer sealed LED 1 does not include the step of removing the phosphor layer 3 located at a long distance from the LED 2 as shown in FIG. 7D, and the LED 1 sealing the phosphor layer shown in FIG. 8G. The procedure of the support plate 17 is the same as the manufacturing method of the second embodiment.

又,該變化例不包括第3實施形態之形成凹部24之步驟(參照圖12C),除此以外與第3實施形態之製造方法相同。 In addition, this modification does not include the step of forming the concave portion 24 in the third embodiment (see FIG. 12C), and is the same as the manufacturing method of the third embodiment.

即,於該方法中,首先如圖14A所示,將複數個LED2準備於支持板7上。並且,準備具備剝離片材6及螢光體層3之螢光密封片材15。 That is, in this method, first, as shown in FIG. 14A, a plurality of LEDs 2 are prepared on the support board 7. Further, a fluorescent sealing sheet 15 having the release sheet 6 and the phosphor layer 3 is prepared.

繼而如圖14B所示,藉由螢光密封片材15之螢光體層3密封複數個LED2。具體而言,藉由具備下模具與下模具之平板壓製機,對複數個LED2及支持板7壓接螢光體層3。 Then, as shown in FIG. 14B, a plurality of LEDs 2 are sealed by the phosphor layer 3 of the fluorescent sealing sheet 15. Specifically, the phosphor layer 3 is pressure-bonded to the plurality of LEDs 2 and the support sheets 7 by a flat plate press having a lower mold and a lower mold.

藉此,於螢光體層3形成凹部24。因此,於螢光體層3形成凸緣部36。 Thereby, the concave portion 24 is formed in the phosphor layer 3. Therefore, the flange portion 36 is formed in the phosphor layer 3.

繼而如圖14C所示,將剝離片材6自螢光體層3剝離。 Then, as shown in FIG. 14C, the release sheet 6 is peeled off from the phosphor layer 3.

繼而如圖14D所示,準備具備透明層4及第2剝離片材19之透明片材18。 Next, as shown in FIG. 14D, a transparent sheet 18 having the transparent layer 4 and the second release sheet 19 is prepared.

繼而如圖15E所示,將透明片材18之透明層4配置於螢光體層3之上表面,繼而將第2剝離片材19自透明層4剝離。藉此,獲得密封LED集合體8。 Then, as shown in FIG. 15E, the transparent layer 4 of the transparent sheet 18 is placed on the upper surface of the phosphor layer 3, and then the second release sheet 19 is peeled off from the transparent layer 4. Thereby, the sealed LED assembly 8 is obtained.

其後,如圖15F所示,將密封LED集合體8切斷,而單片化成螢光體層密封之LED1。 Thereafter, as shown in FIG. 15F, the sealed LED assembly 8 is cut and singulated into a phosphor layer-sealed LED 1.

藉此,如圖15G所示,獲得螢光體層密封之LED1。 Thereby, as shown in FIG. 15G, the phosphor layer-sealed LED 1 is obtained.

其後,對螢光體層密封之LED1進行篩選後,如圖15H所示,將所篩選之螢光體層密封之LED1安裝至基板50,獲得LED裝置60。 Thereafter, after the phosphor layer-sealed LED 1 is screened, as shown in FIG. 15H, the LED layer 1 sealed with the selected phosphor layer is mounted on the substrate 50 to obtain an LED device 60.

並且,於該變化例中,發揮與上述第3實施形態相同之作用效果。 Further, in this modification, the same operational effects as those of the third embodiment described above are exhibited.

又,與第2實施形態中之螢光體層密封之LED1之製造方法相比,圖14A~圖15G所表示之方法無需包括圖7D表示之將相對於LED2位於遠距離之螢光體層3去除之步驟、及圖8G表示之將螢光體層密封之LED1再配置於第2支持板17之步驟。因此,可減少製造步驟數,從而降低製造成本。 Further, the method shown in FIGS. 14A to 15G does not need to include the phosphor layer 3 which is located at a long distance with respect to the LED 2 as shown in FIG. 7D, as compared with the method of manufacturing the phosphor layer sealed by the phosphor layer in the second embodiment. The step and the step of rearranging the phosphor layer sealed LED 1 on the second support plate 17 shown in FIG. 8G. Therefore, the number of manufacturing steps can be reduced, thereby reducing the manufacturing cost.

[實施例] [Examples]

以下之記載中使用之調配比率(含有比率)、物性值、參數等具體數值可替代為上述「實施方式」中記載之對應於其等之調配比率(含有比率)、物性值、參數等該記載之上限值(定義為「以下」、「未達」之數值)或下限值(定義為「以上」、「超過」之數值)。 The specific values such as the blending ratio (content ratio), the physical property value, and the parameter used in the following descriptions may be replaced by the blending ratio (content ratio), physical property value, and parameters described in the above-mentioned "embodiment". The upper limit (defined as "below", "not reached") or lower (defined as "above", "exceeded").

<含烯基之聚矽氧烷及含氫矽烷基之聚矽氧烷之合成> <Synthesis of alkenyl group-containing polyoxyalkylene oxide and hydroxanyl group-containing polyoxyalkylene oxide>

合成例1 Synthesis Example 1

於裝備有攪拌機、回流冷卻管、投入口及溫度計之四口燒瓶 中,投入1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷93.2g、水140g、三氟甲磺酸0.38g及甲苯500g並進行混合,一面攪拌一面歷時1小時滴加甲基苯基二甲氧基矽烷729.2g與苯基三甲氧基矽烷330.5g之混合物,其後加熱回流1小時。其後進行冷卻,分離並去除下層(水層),將上層(甲苯溶液)水洗3次。向水洗後之甲苯溶液中添加氫氧化鉀0.40g,自水分離管去除水之同時進行回流。水之去除結束後,進而回流5小時,使之冷卻。其後,投入乙酸0.6g進行中和後,進行過濾而獲得甲苯溶液,將所獲得之甲苯溶液水洗3次。其後進行減壓濃縮,藉此獲得液狀之含烯基之聚矽氧烷A。含烯基之聚矽氧烷A之平均單元式及平均組成式如下所述。 Four-necked flask equipped with a blender, reflux cooling tube, input port and thermometer In the middle, 93.2 g of 1,3-divinyl-1,1,3,3-tetramethyldioxane, 140 g of water, 0.38 g of trifluoromethanesulfonic acid and 500 g of toluene were mixed and mixed while stirring. A mixture of 729.2 g of methylphenyldimethoxydecane and 330.5 g of phenyltrimethoxydecane was added dropwise over 1 hour, followed by heating under reflux for 1 hour. Thereafter, the mixture was cooled, the lower layer (aqueous layer) was separated and removed, and the upper layer (toluene solution) was washed with water three times. To the toluene solution after washing with water, 0.40 g of potassium hydroxide was added, and the water was removed from the water separation tube while refluxing. After the removal of water was completed, the mixture was further refluxed for 5 hours to be cooled. Thereafter, 0.6 g of acetic acid was added for neutralization, and then filtered to obtain a toluene solution, and the obtained toluene solution was washed with water three times. Thereafter, concentration under reduced pressure was carried out, whereby a liquid alkenyl group-containing polyoxane A was obtained. The average unit formula and average composition formula of the alkenyl group-containing polyoxosiloxane A are as follows.

平均單元式:((CH2=CH)(CH3)2SiO1/2)0.15(CH3C6H5SiO2/2)0.60(C6H5SiO3/2)0.25 Average unit formula: ((CH 2 =CH)(CH 3 ) 2 SiO 1/2 ) 0.15 (CH 3 C 6 H 5 SiO 2/2 ) 0.60 (C 6 H 5 SiO 3/2 ) 0.25

平均組成式:(CH2=CH)0.15(CH3)0.90(C6H5)0.85SiO1.05 Average composition: (CH 2 =CH) 0.15 (CH 3 ) 0.90 (C 6 H 5 ) 0.85 SiO 1.05

即,含烯基之聚矽氧烷A係以R1為乙烯基、R2為甲基及苯基且a=0.15、b=1.75的上述平均組成式(1)所表示。 That is, the alkenyl group-containing polyoxyalkylene A is represented by the above average composition formula (1) in which R 1 is a vinyl group, R 2 is a methyl group and a phenyl group, and a=0.15 and b=1.75.

又,藉由凝膠滲透層析法,對含烯基之聚矽氧烷A之聚苯乙烯換算之重量平均分子量進行測定,結果為2300。 Further, the weight average molecular weight in terms of polystyrene of the alkenyl group-containing polyoxosiloxane A was measured by gel permeation chromatography, and it was 2,300.

合成例2 Synthesis Example 2

於裝備有攪拌機、回流冷卻管、投入口及溫度計之四口燒瓶中,投入1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷93.2g、水140g、三氟甲磺酸0.38g及甲苯500g並進行混合,一面攪拌一面歷時1小時滴加二苯基二甲氧基矽烷173.4g與苯基三甲氧基矽烷300.6g之混合物,滴加結束後,加熱回流1小時。其後進行冷卻,分離並去除下層(水層),將上層(甲苯溶液)水洗3次。向水洗後之甲苯溶液中添加氫氧化鉀0.40g,自水分離管去除水之同時進行回流。水之去除結束後,進 而回流5小時,使之冷卻。投入乙酸0.6g進行中和後,進行過濾而獲得甲苯溶液,將所獲得之甲苯溶液水洗3次。其後進行減壓濃縮,藉此獲得液狀之含烯基之聚矽氧烷B。含烯基之聚矽氧烷B之平均單元式及平均組成式如下所述。 In a four-necked flask equipped with a stirrer, a reflux cooling tube, an input port, and a thermometer, 93.2 g of 1,3-divinyl-1,1,3,3-tetramethyldioxane, 140 g of water, and three were charged. 0.38 g of fluoromethanesulfonic acid and 500 g of toluene were mixed, and a mixture of 173.4 g of diphenyldimethoxydecane and 300.6 g of phenyltrimethoxydecane was added dropwise thereto over 1 hour while stirring, and the mixture was heated and refluxed. 1 hour. Thereafter, the mixture was cooled, the lower layer (aqueous layer) was separated and removed, and the upper layer (toluene solution) was washed with water three times. To the toluene solution after washing with water, 0.40 g of potassium hydroxide was added, and the water was removed from the water separation tube while refluxing. After the removal of water, While refluxing for 5 hours, it was allowed to cool. After 0.6 g of acetic acid was added for neutralization, filtration was carried out to obtain a toluene solution, and the obtained toluene solution was washed with water three times. Thereafter, concentration under reduced pressure was carried out, whereby a liquid alkenyl group-containing polyoxetane B was obtained. The average unit formula and average composition formula of the alkenyl group-containing polyoxetane B are as follows.

平均單元式:(CH2=CH(CH3)2SiO1/2)0.31((C6H5)2SiO2/2)0.22(C6H5SiO3/2)0.47 Average unit: (CH 2 =CH(CH 3 ) 2 SiO 1/2 ) 0.31 ((C 6 H 5 ) 2 SiO 2/2 ) 0.22 (C 6 H 5 SiO 3/2 ) 0.47

平均組成式:(CH2=CH)0.31(CH3)0.62(C6H5)0.91SiO1.08 Average composition: (CH 2 =CH) 0.31 (CH 3 ) 0.62 (C 6 H 5 ) 0.91 SiO 1.08

即,含烯基之聚矽氧烷B係以R1為乙烯基、R2為甲基及苯基且a=0.31、b=1.53的上述平均組成式(1)所表示。 That is, the alkenyl group-containing polyoxyalkylene B is represented by the above average composition formula (1) in which R 1 is a vinyl group, R 2 is a methyl group and a phenyl group, and a=0.31 and b=1.53.

又,藉由凝膠滲透層析法,對含烯基之聚矽氧烷B之聚苯乙烯換算之重量平均分子量進行測定,結果為1000。 Further, the weight average molecular weight in terms of polystyrene of the alkenyl group-containing polyoxyalkylene B was measured by gel permeation chromatography and found to be 1,000.

合成例3 Synthesis Example 3

於裝備有攪拌機、回流冷卻管、投入口及溫度計之四口燒瓶中,投入二苯基二甲氧基矽烷325.9g、苯基三甲氧基矽烷564.9g、及三氟甲磺酸2.36g並進行混合,1,1,3,3-四甲基二矽氧烷134.3g,一面攪拌一面歷時30分鐘滴加乙酸432g。滴加結束後,一面攪拌一面將混合物升溫至50℃,使之反應3小時。冷卻至室溫後添加甲苯與水,進行充分混合後靜置,分離並去除下層(水層)。其後,將上層(甲苯溶液)水洗3次後進行減壓濃縮,藉此獲得含氫矽烷基之聚矽氧烷C(交聯劑C)。 Into a four-necked flask equipped with a stirrer, a reflux cooling tube, an inlet, and a thermometer, 325.9 g of diphenyldimethoxydecane, 564.9 g of phenyltrimethoxydecane, and 2.36 g of trifluoromethanesulfonic acid were placed and carried out. 134.3 g of 1,1,3,3-tetramethyldioxane was mixed, and 432 g of acetic acid was added dropwise thereto over 30 minutes while stirring. After completion of the dropwise addition, the mixture was heated to 50 ° C while stirring, and allowed to react for 3 hours. After cooling to room temperature, toluene and water were added, and the mixture was thoroughly mixed, and then allowed to stand, and the lower layer (aqueous layer) was separated and removed. Thereafter, the upper layer (toluene solution) was washed with water three times, and then concentrated under reduced pressure to obtain a polyoxyalkylene group C (crosslinking agent C) containing a hydroquinone group.

含氫矽烷基之聚矽氧烷C之平均單元式及平均組成式如下所述。 The average unit formula and average composition formula of the polyoxyalkylene C containing a hydroquinone group are as follows.

平均單元式:(H(CH3)2SiO1/2)0.33((C6H5)2SiO2/2)0.22(C6H5PhSiO3/2)0.45 Average unit: (H(CH 3 ) 2 SiO 1/2 ) 0.33 ((C 6 H 5 ) 2 SiO 2/2 ) 0.22 (C 6 H 5 PhSiO 3/2 ) 0.45

平均組成式:H0.33(CH3)0.66(C6H5)0.89SiO1.06 Average composition: H 0.33 (CH 3 ) 0.66 (C 6 H 5 ) 0.89 SiO 1.06

即,含氫矽烷基之聚矽氧烷C係以R3為甲基及苯基且c=0.33、d=1.55的上述平均組成式(2)所表示。 That is, the polyoxyalkylene group C containing a hydroquinone group is represented by the above average composition formula (2) in which R 3 is a methyl group and a phenyl group and c=0.33 and d=1.55.

又,藉由凝膠滲透層析法,對含氫矽烷基之聚矽氧烷C之聚苯乙烯換算之重量平均分子量進行測定,結果為1000。 Further, the polystyrene-equivalent weight average molecular weight of the hydroxyl group-containing polyoxyalkylene C was measured by gel permeation chromatography and found to be 1,000.

<其他原料> <Other raw materials>

關於除含烯基之聚矽氧烷及含氫矽烷基之聚矽氧烷以外之原料,以下進行詳細說明。 The materials other than the alkenyl group-containing polyoxyalkylene oxide and the hydroquinone-containing polyoxyalkylene oxide will be described in detail below.

LR7665: LR7665:

商品名,甲基系聚矽氧樹脂組合物,折射率1.41,Wacker Asahikasei Silicone公司製造 Trade name, methyl polyoxy resin composition, refractive index 1.41, manufactured by Wacker Asahikasei Silicone

無機填料A: Inorganic filler A:

折射率1.55,組成及組成比率(質量%):SiO2/Al2O3/CaO/MgO=60/20/15/5之無機填料,且平均粒徑:15μm(藉由分級而調整平均粒徑) Refractive index 1.55, composition and composition ratio (% by mass): inorganic filler of SiO 2 /Al 2 O 3 /CaO/MgO=60/20/15/5, and average particle diameter: 15 μm (adjusted average particle by classification) path)

TOSPEARL TS2000B: TOSPEARL TS2000B:

聚矽氧系樹脂粒子,平均粒徑6.0μm,Japan Momentive Performance Materials公司製造 Polysiloxane resin particles, average particle size 6.0 μm, manufactured by Japan Momentive Performance Materials

<聚矽氧樹脂組合物之製備> <Preparation of polyoxyl resin composition>

製備例1 Preparation Example 1

將含烯基之聚矽氧烷A(合成例1)20g、含烯基之聚矽氧烷B(合成例2)25g、含氫矽烷基之聚矽氧烷C(合成例3、交聯劑C)25g、及鉑羰基錯合物5mg進行混合,製備聚矽氧樹脂組合物A。 20 g of an alkenyl group-containing polyoxosiloxane A (Synthesis Example 1), an alkenyl group-containing polyoxyalkylene B (Comparative Example 2) 25 g, and a hydrofluorenyl group-containing polyoxyalkylene C (Synthesis Example 3, cross-linking) 25 g of the agent C) and 5 mg of the platinum carbonyl complex were mixed to prepare a polyoxyxylene resin composition A.

製備例2 Preparation Example 2

準備日本專利特開2010-265436號公報中記載之實施例1之聚矽氧樹脂用組合物作為聚矽氧樹脂組合物B(縮合-加成反應硬化型聚矽氧樹脂組合物)。 The composition for a polyoxynoxy resin of Example 1 described in Japanese Laid-Open Patent Publication No. 2010-265436 is prepared as a polyoxyxylene resin composition B (condensation-addition reaction hardening type polyoxyxyl resin composition).

<螢光體層密封之LED之製造> <Manufacture of LEDs for phosphor layer sealing>

實施例1 Example 1

對聚矽氧樹脂組合物A以相對於其等總量成為50質量%之方式混合無機填料A,而以清漆之形式製備透明樹脂組合物X。透明樹脂組合物X之折射率RIt為1.56。 The inorganic filler A was mixed with the polyoxyxene resin composition A in an amount of 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index RIt of the transparent resin composition X was 1.56.

對透明樹脂組合物X以相對於其等總量成為20質量%之方式調配YAG468(螢光體,根元特殊化學公司製造),並將該等進行混合,藉此製備螢光體樹脂組合物。 YAG468 (fluorescent body, manufactured by Genji Specialty Chemicals Co., Ltd.) was blended so as to be 20% by mass based on the total amount of the transparent resin composition X, and these were mixed to prepare a phosphor resin composition.

其後,利用敷料器,於厚度50μm之剝離片材(PTE片材,商品名「SS4C」,Nippa公司製造)之表面以加熱後之厚度成為650μm之方式塗佈透明樹脂組合物X,其後於90℃下加熱20分鐘,藉此製作B階段之透明層。 Then, the transparent resin composition X was applied to the surface of the release sheet (PTE sheet, trade name "SS4C", manufactured by Nippa Co., Ltd.) having a thickness of 50 μm so as to have a thickness of 650 μm after heating by an applicator. The B-stage transparent layer was produced by heating at 90 ° C for 20 minutes.

繼而,利用敷料器,於透明層之表面(上表面)以加熱後之厚度成為350μm之方式塗佈螢光體樹脂組合物,其後於80℃下加熱11分鐘,藉此製作B階段之螢光體層。 Then, the phosphor resin composition was applied to the surface (upper surface) of the transparent layer by heating to a thickness of 350 μm by an applicator, and then heated at 80 ° C for 11 minutes to prepare a B-stage firefly. Light body layer.

藉此,製作包含剝離片材、透明層及螢光體層之密封片材(參照圖2A)。 Thereby, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (see FIG. 2A).

其後,於不鏽鋼板上貼附雙面膠帶(感壓接著劑層),於其上以1.44mm間距配置複數個LED(EDI-FA4545A,尺寸:1.14mm×1.14mm×150μm,Epistar公司製造)(參照圖2B)。其後,使用加熱至90℃之真空平板壓製機,對複數個LED歷時10分鐘熱壓接密封片材(參照圖2C)。具體而言,以使螢光體層接觸LED及其周圍之雙面膠帶之方式對複數個LED熱壓接密封片材。螢光體層及透明層藉由該熱壓接而暫時塑化。藉此,藉由密封片材,將複數個LED密封。 Thereafter, a double-sided tape (pressure-sensitive adhesive layer) was attached to a stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14 mm × 1.14 mm × 150 μm, manufactured by Epistar Co., Ltd.) were placed thereon at a pitch of 1.44 mm. (Refer to Figure 2B). Thereafter, the sealing sheet was thermocompression-bonded to a plurality of LEDs for 10 minutes using a vacuum plate press heated to 90 ° C (refer to FIG. 2C). Specifically, the sealing sheet is thermocompression bonded to a plurality of LEDs in such a manner that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer and the transparent layer are temporarily plasticized by the thermocompression bonding. Thereby, a plurality of LEDs are sealed by sealing the sheet.

其後,於150℃下進行2小時後硬化處理。藉此,將螢光體層及透明層進行C階段化。其後,藉由切斷而將密封片材單片化,從而於 不鏽鋼板上製造具備1個LED、螢光體層及透明層之螢光體層密封之LED(參照圖2C)。 Thereafter, the curing treatment was carried out at 150 ° C for 2 hours. Thereby, the phosphor layer and the transparent layer are C-staged. Thereafter, the sealing sheet is singulated by cutting, thereby An LED having a phosphor layer sealed with one LED, a phosphor layer, and a transparent layer was produced on a stainless steel plate (see FIG. 2C).

繼而,將剝離片材自透明層剝離(參照圖2C之假想線)。繼而,以使複數個LED單片化之方式切斷密封LED集合體(參照圖2D)。 Then, the release sheet was peeled off from the transparent layer (refer to the imaginary line of FIG. 2C). Then, the sealed LED assembly is cut so that a plurality of LEDs are singulated (see FIG. 2D).

其後,將螢光體層密封之LED自雙面膠帶剝離(參照圖2D之箭頭及圖2E)。 Thereafter, the LED sealed by the phosphor layer is peeled off from the double-sided tape (see the arrow of FIG. 2D and FIG. 2E).

藉此,獲得螢光體層密封之LED(參照圖2E)。 Thereby, a phosphor layer sealed LED is obtained (refer to FIG. 2E).

實施例2 Example 2

對聚矽氧樹脂組合物A以相對於其等總量成為50質量%之方式混合無機填料A,而以清漆之形式製備透明樹脂組合物X。透明樹脂組合物X之折射率RIt為1.56。 The inorganic filler A was mixed with the polyoxyxene resin composition A in an amount of 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index RIt of the transparent resin composition X was 1.56.

又,對透明樹脂組合物X以相對於其等總量成為12質量%之方式調配YAG468(螢光體,根元特殊化學公司製造),並將該等進行混合,藉此製備螢光體樹脂組合物。 In addition, YAG468 (fluorescent body, manufactured by Genji Specialty Chemicals Co., Ltd.) was blended so as to be 12% by mass based on the total amount of the transparent resin composition X, and these were mixed to prepare a phosphor resin combination. Things.

其後,利用敷料器,於厚度50μm之剝離片材(PTE片材,商品名「SS4C」,Nippa公司製造)之表面以加熱後之厚度成為500μm之方式塗佈透明樹脂組合物X,其後於90℃下加熱20分鐘,藉此製作B階段之透明層。 Then, the transparent resin composition X was applied to the surface of the release sheet (PTE sheet, trade name "SS4C", manufactured by Nippa Co., Ltd.) having a thickness of 50 μm so as to have a thickness of 500 μm after heating by an applicator. The B-stage transparent layer was produced by heating at 90 ° C for 20 minutes.

利用敷料器,以加熱後之厚度成為500μm之方式於其上塗佈螢光體樹脂組合物,其後於80℃下加熱11分鐘,藉此製作B階段之螢光體層。 The phosphor resin composition was applied thereon by using an applicator so as to have a thickness of 500 μm after heating, and then heated at 80 ° C for 11 minutes to prepare a B-stage phosphor layer.

藉此,製作包含剝離片材、透明層及螢光體層之密封片材(參照圖2A)。 Thereby, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (see FIG. 2A).

其後,於不鏽鋼板上貼附雙面膠帶(感壓接著劑層),於其上以1.64mm間距配置複數個LED(EDI-FA4545A,尺寸:1.14mm×1.14mm×150μm,Epistar公司製造)(參照圖2B)。其後,使用加熱至90℃ 之真空平板壓製機,對複數個LED歷時10分鐘熱壓接密封片材(參照圖2C)。具體而言,以使螢光體層接觸LED及其周圍之雙面膠帶之方式對複數個LED熱壓接密封片材。螢光體層及透明層藉由該熱壓接而暫時塑化。藉此,藉由密封片材,將複數個LED密封。 Thereafter, a double-sided tape (pressure-sensitive adhesive layer) was attached to a stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14 mm × 1.14 mm × 150 μm, manufactured by Epistar Co., Ltd.) were placed thereon at a pitch of 1.64 mm. (Refer to Figure 2B). Thereafter, use heating to 90 ° C The vacuum flat plate press machine heat-presses the sealing sheet for a plurality of LEDs for 10 minutes (refer to FIG. 2C). Specifically, the sealing sheet is thermocompression bonded to a plurality of LEDs in such a manner that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer and the transparent layer are temporarily plasticized by the thermocompression bonding. Thereby, a plurality of LEDs are sealed by sealing the sheet.

其後,於150℃下進行2小時後硬化處理。藉此,將螢光體層及透明層進行C階段化。其後,藉由切斷而將密封片材單片化,從而於不鏽鋼板上製造具備1個LED、螢光體層及透明層之螢光體層密封之LED(參照圖2C)。 Thereafter, the curing treatment was carried out at 150 ° C for 2 hours. Thereby, the phosphor layer and the transparent layer are C-staged. Thereafter, the sealing sheet was diced by cutting, and an LED having a phosphor layer sealed with one LED, a phosphor layer, and a transparent layer was produced on a stainless steel plate (see FIG. 2C).

繼而,將剝離片材自透明層剝離(參照圖2C之假想線)。繼而,以使複數個LED單片化之方式切斷密封LED集合體(參照圖2D)。 Then, the release sheet was peeled off from the transparent layer (refer to the imaginary line of FIG. 2C). Then, the sealed LED assembly is cut so that a plurality of LEDs are singulated (see FIG. 2D).

其後,將螢光體層密封之LED自雙面膠帶剝離(參照圖2D之箭頭及圖2E)。 Thereafter, the LED sealed by the phosphor layer is peeled off from the double-sided tape (see the arrow of FIG. 2D and FIG. 2E).

藉此,獲得螢光體層密封之LED(參照圖2E)。 Thereby, a phosphor layer sealed LED is obtained (refer to FIG. 2E).

實施例3 Example 3

對聚矽氧樹脂組合物A以相對於其等總量成為50質量%之方式混合無機填料A,而以清漆之形式製備透明樹脂組合物X。透明樹脂組合物X之折射率RIt為1.56。 The inorganic filler A was mixed with the polyoxyxene resin composition A in an amount of 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index RIt of the transparent resin composition X was 1.56.

對透明樹脂組合物X以相對於其等總量成為10質量%之方式調配YAG468(螢光體,根元特殊化學公司製造),並將該等進行混合,藉此製備螢光體樹脂組合物。 YAG468 (fluorescent body, manufactured by Genji Specialty Chemicals Co., Ltd.) was blended so as to be 10% by mass based on the total amount of the transparent resin composition X, and these were mixed to prepare a phosphor resin composition.

其後,利用敷料器,於厚度50μm之剝離片材(PTE片材,商品名「SS4C」,Nippa公司製造)之表面以加熱後之厚度成為400μm之方式塗佈透明樹脂組合物X,其後於90℃下加熱20分鐘,藉此製作B階段之透明層。 Then, the transparent resin composition X was applied to the surface of the release sheet (PTE sheet, trade name "SS4C", manufactured by Nippa Co., Ltd.) having a thickness of 50 μm so as to have a thickness of 400 μm after heating by an applicator. The B-stage transparent layer was produced by heating at 90 ° C for 20 minutes.

繼而,利用敷料器,於透明層之表面(上表面)以加熱後之厚度成為600μm之方式塗佈螢光體樹脂組合物,其後於80℃下加熱11分鐘, 藉此製作B階段之螢光體層。 Then, the phosphor resin composition was applied to the surface (upper surface) of the transparent layer by a thickness of 600 μm after heating using an applicator, and then heated at 80 ° C for 11 minutes. This produces a B-stage phosphor layer.

藉此,製作包含剝離片材、透明層及螢光體層之密封片材(參照圖2A)。 Thereby, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (see FIG. 2A).

其後,於不鏽鋼板上貼附雙面膠帶(感壓接著劑層),於其上以1.84mm間距配置複數個LED(EDI-FA4545A,尺寸:1.14mm×1.14mm×150μm,Epistar公司製造)(參照圖2B)。其後,使用加熱至90℃之真空平板壓製機,對複數個LED歷時10分鐘熱壓接密封片材(參照圖2C)。具體而言,以使螢光體層接觸LED及其周圍之雙面膠帶之方式對複數個LED熱壓接密封片材。螢光體層及透明層藉由該熱壓接而暫時塑化。藉此,藉由密封片材,將複數個LED密封。 Thereafter, a double-sided tape (pressure-sensitive adhesive layer) was attached to the stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14 mm × 1.14 mm × 150 μm, manufactured by Epistar) were placed thereon at a pitch of 1.84 mm. (Refer to Figure 2B). Thereafter, the sealing sheet was thermocompression-bonded to a plurality of LEDs for 10 minutes using a vacuum plate press heated to 90 ° C (refer to FIG. 2C). Specifically, the sealing sheet is thermocompression bonded to a plurality of LEDs in such a manner that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer and the transparent layer are temporarily plasticized by the thermocompression bonding. Thereby, a plurality of LEDs are sealed by sealing the sheet.

其後,於150℃下進行2小時後硬化處理。藉此,將螢光體層及透明層進行C階段化。其後,藉由切斷而將密封片材單片化,從而於不鏽鋼板上製造具備1個LED、螢光體層及透明層之螢光體層密封之LED(參照圖2C)。 Thereafter, the curing treatment was carried out at 150 ° C for 2 hours. Thereby, the phosphor layer and the transparent layer are C-staged. Thereafter, the sealing sheet was diced by cutting, and an LED having a phosphor layer sealed with one LED, a phosphor layer, and a transparent layer was produced on a stainless steel plate (see FIG. 2C).

繼而,將剝離片材自透明層剝離(參照圖2C之假想線)。繼而,以使複數個LED單片化之方式切斷密封LED集合體(參照圖2D)。 Then, the release sheet was peeled off from the transparent layer (refer to the imaginary line of FIG. 2C). Then, the sealed LED assembly is cut so that a plurality of LEDs are singulated (see FIG. 2D).

其後,將螢光體層密封之LED自雙面膠帶剝離(參照圖2D之箭頭及圖2E)。 Thereafter, the LED sealed by the phosphor layer is peeled off from the double-sided tape (see the arrow of FIG. 2D and FIG. 2E).

藉此,獲得螢光體層密封之LED(參照圖2E)。 Thereby, a phosphor layer sealed LED is obtained (refer to FIG. 2E).

實施例4 Example 4

對聚矽氧樹脂組合物A以相對於其等總量成為50質量%之方式混合無機填料A,而以清漆之形式製備透明樹脂組合物X。透明樹脂組合物X之折射率RIt為1.56。 The inorganic filler A was mixed with the polyoxyxene resin composition A in an amount of 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index RIt of the transparent resin composition X was 1.56.

對透明樹脂組合物X以相對於其等總量成為10質量%之方式調配YAG468(螢光體,根元特殊化學公司製造),並將該等進行混合,藉此製備螢光體樹脂組合物。 YAG468 (fluorescent body, manufactured by Genji Specialty Chemicals Co., Ltd.) was blended so as to be 10% by mass based on the total amount of the transparent resin composition X, and these were mixed to prepare a phosphor resin composition.

其後,利用敷料器,於厚度50μm之剝離片材(PTE片材,商品名「SS4C」,Nippa公司製造)之表面以加熱後之厚度成為900μm之方式塗佈透明樹脂組合物X,其後於90℃下加熱20分鐘,藉此製作B階段之透明層。 Then, the transparent resin composition X was applied to the surface of the release sheet (PTE sheet, trade name "SS4C", manufactured by Nippa Co., Ltd.) having a thickness of 50 μm so that the thickness after heating became 900 μm by the applicator. The B-stage transparent layer was produced by heating at 90 ° C for 20 minutes.

繼而,利用敷料器,於透明層之表面(上表面)以加熱後之厚度成為600μm之方式塗佈螢光體樹脂組合物,其後於80℃下加熱11分鐘,藉此製作B階段之螢光體層。 Then, the phosphor resin composition was applied to the surface (upper surface) of the transparent layer by a thickness of 600 μm after heating by an applicator, and then heated at 80 ° C for 11 minutes to prepare a B-stage firefly. Light body layer.

藉此,製作包含剝離片材、透明層及螢光體層之密封片材(參照圖2A)。 Thereby, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (see FIG. 2A).

其後,於不鏽鋼板上貼附雙面膠帶(感壓接著劑層),於其上以1.84mm間距配置複數個LED(EDI-FA4545A,尺寸:1.14mm×1.14mm×150μm,Epistar公司製造)(參照圖2B)。其後,使用加熱至90℃之真空平板壓製機,對複數個LED歷時10分鐘熱壓接密封片材(參照圖2C)。具體而言,以使螢光體層接觸LED及其周圍之雙面膠帶之方式對複數個LED熱壓接密封片材。螢光體層及透明層藉由該熱壓接而暫時塑化。藉此,藉由密封片材,將複數個LED密封。 Thereafter, a double-sided tape (pressure-sensitive adhesive layer) was attached to the stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14 mm × 1.14 mm × 150 μm, manufactured by Epistar) were placed thereon at a pitch of 1.84 mm. (Refer to Figure 2B). Thereafter, the sealing sheet was thermocompression-bonded to a plurality of LEDs for 10 minutes using a vacuum plate press heated to 90 ° C (refer to FIG. 2C). Specifically, the sealing sheet is thermocompression bonded to a plurality of LEDs in such a manner that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer and the transparent layer are temporarily plasticized by the thermocompression bonding. Thereby, a plurality of LEDs are sealed by sealing the sheet.

其後,於150℃下進行2小時後硬化處理。藉此,將螢光體層及透明層進行C階段化。其後,藉由切斷而將密封片材單片化,從而於不鏽鋼板上製造具備1個LED、螢光體層及透明層之螢光體層密封之LED(參照圖2C)。 Thereafter, the curing treatment was carried out at 150 ° C for 2 hours. Thereby, the phosphor layer and the transparent layer are C-staged. Thereafter, the sealing sheet was diced by cutting, and an LED having a phosphor layer sealed with one LED, a phosphor layer, and a transparent layer was produced on a stainless steel plate (see FIG. 2C).

繼而,將剝離片材自透明層剝離(參照圖2C之假想線)。繼而,以使複數個LED單片化之方式切斷密封LED集合體(參照圖2D)。 Then, the release sheet was peeled off from the transparent layer (refer to the imaginary line of FIG. 2C). Then, the sealed LED assembly is cut so that a plurality of LEDs are singulated (see FIG. 2D).

其後,將螢光體層密封之LED自雙面膠帶剝離(參照圖2D之箭頭及圖2E)。 Thereafter, the LED sealed by the phosphor layer is peeled off from the double-sided tape (see the arrow of FIG. 2D and FIG. 2E).

藉此,獲得螢光體層密封之LED(參照圖2E)。 Thereby, a phosphor layer sealed LED is obtained (refer to FIG. 2E).

實施例5 Example 5

對聚矽氧樹脂組合物A以相對於其等總量成為50質量%之方式混合無機填料A,而以清漆之形式製備透明樹脂組合物X。透明樹脂組合物X之折射率RIt為1.56。 The inorganic filler A was mixed with the polyoxyxene resin composition A in an amount of 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index RIt of the transparent resin composition X was 1.56.

又,對透明樹脂組合物X以相對於其等總量成為11質量%之方式調配YAG468(螢光體,根元特殊化學公司製造),並將該等進行混合,藉此製備螢光體樹脂組合物。 In addition, YAG468 (fluorescent body, manufactured by Genji Specialty Chemicals Co., Ltd.) was blended so as to be 11% by mass based on the total amount of the transparent resin composition X, and these were mixed to prepare a phosphor resin combination. Things.

其後,利用敷料器,於厚度50μm之剝離片材(PTE片材,商品名「SS4C」,Nippa公司製造)之表面以加熱後之厚度成為500μm之方式塗佈透明樹脂組合物X,其後於90℃下加熱20分鐘,藉此製作B階段之透明層。 Then, the transparent resin composition X was applied to the surface of the release sheet (PTE sheet, trade name "SS4C", manufactured by Nippa Co., Ltd.) having a thickness of 50 μm so as to have a thickness of 500 μm after heating by an applicator. The B-stage transparent layer was produced by heating at 90 ° C for 20 minutes.

繼而,利用敷料器,於透明層之表面(上表面)以加熱後之厚度成為500μm之方式塗佈螢光體樹脂組合物,其後於80℃下加熱11分鐘,藉此製作B階段之螢光體層。 Then, the phosphor resin composition was applied to the surface (upper surface) of the transparent layer by a thickness of 500 μm after heating by an applicator, and then heated at 80 ° C for 11 minutes to prepare a B-stage firefly. Light body layer.

藉此,製作包含剝離片材、透明層及螢光體層之密封片材(參照圖2A)。 Thereby, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (see FIG. 2A).

其後,於不鏽鋼板上貼附雙面膠帶(感壓接著劑層),於其上以1.84mm間距配置複數個LED(EDI-FA4545A,尺寸:1.14mm×1.14mm×150μm,Epistar公司製造)(參照圖2B)。其後,使用加熱至90℃之真空平板壓製機,對複數個LED歷時10分鐘熱壓接密封片材(參照圖2C)。具體而言,以使螢光體層接觸LED及其周圍之雙面膠帶之方式對複數個LED熱壓接密封片材。螢光體層及透明層藉由該熱壓接而暫時塑化。藉此,藉由密封片材,將複數個LED密封。 Thereafter, a double-sided tape (pressure-sensitive adhesive layer) was attached to the stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14 mm × 1.14 mm × 150 μm, manufactured by Epistar) were placed thereon at a pitch of 1.84 mm. (Refer to Figure 2B). Thereafter, the sealing sheet was thermocompression-bonded to a plurality of LEDs for 10 minutes using a vacuum plate press heated to 90 ° C (refer to FIG. 2C). Specifically, the sealing sheet is thermocompression bonded to a plurality of LEDs in such a manner that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer and the transparent layer are temporarily plasticized by the thermocompression bonding. Thereby, a plurality of LEDs are sealed by sealing the sheet.

其後,於150℃下進行2小時後硬化處理。藉此,將螢光體層及透明層進行C階段化。其後,藉由切斷而將密封片材單片化,從而於不鏽鋼板上製造具備1個LED、螢光體層及透明層之螢光體層密封之LED(參照圖2C)。 Thereafter, the curing treatment was carried out at 150 ° C for 2 hours. Thereby, the phosphor layer and the transparent layer are C-staged. Thereafter, the sealing sheet was diced by cutting, and an LED having a phosphor layer sealed with one LED, a phosphor layer, and a transparent layer was produced on a stainless steel plate (see FIG. 2C).

繼而,將剝離片材自透明層剝離(參照圖2C之假想線)。繼而,以使複數個LED單片化之方式切斷密封LED集合體(參照圖2D)。 Then, the release sheet was peeled off from the transparent layer (refer to the imaginary line of FIG. 2C). Then, the sealed LED assembly is cut so that a plurality of LEDs are singulated (see FIG. 2D).

其後,將螢光體層密封之LED自雙面膠帶剝離(參照圖2D之箭頭及圖2E)。 Thereafter, the LED sealed by the phosphor layer is peeled off from the double-sided tape (see the arrow of FIG. 2D and FIG. 2E).

藉此,獲得螢光體層密封之LED(參照圖2E)。 Thereby, a phosphor layer sealed LED is obtained (refer to FIG. 2E).

實施例6 Example 6

對聚矽氧樹脂組合物A以相對於其等總量成為50質量%之方式混合無機填料A,而以清漆之形式製備透明樹脂組合物X。透明樹脂組合物X之折射率RIt為1.56。 The inorganic filler A was mixed with the polyoxyxene resin composition A in an amount of 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index RIt of the transparent resin composition X was 1.56.

對透明樹脂組合物X以相對於其等總量成為13質量%之方式調配YAG468(螢光體,根元特殊化學公司製造),並將該等進行混合,藉此製備螢光體樹脂組合物。 YAG468 (fluorescent body, manufactured by Genji Specialty Chemicals Co., Ltd.) was blended so as to be 13% by mass based on the total amount of the transparent resin composition X, and these were mixed to prepare a phosphor resin composition.

其後,利用敷料器,於厚度50μm之剝離片材(PTE片材,商品名「SS4C」,Nippa公司製造)之表面以加熱後之厚度成為500μm之方式塗佈透明樹脂組合物X,其後於90℃下加熱20分鐘,藉此製作B階段之透明層。 Then, the transparent resin composition X was applied to the surface of the release sheet (PTE sheet, trade name "SS4C", manufactured by Nippa Co., Ltd.) having a thickness of 50 μm so as to have a thickness of 500 μm after heating by an applicator. The B-stage transparent layer was produced by heating at 90 ° C for 20 minutes.

繼而,利用敷料器,於透明層之表面(上表面)以加熱後之厚度成為500μm之方式塗佈螢光體樹脂組合物,其後於80℃下加熱11分鐘,藉此製作B階段之螢光體層。 Then, the phosphor resin composition was applied to the surface (upper surface) of the transparent layer by a thickness of 500 μm after heating by an applicator, and then heated at 80 ° C for 11 minutes to prepare a B-stage firefly. Light body layer.

藉此,製作包含剝離片材、透明層及螢光體層之密封片材(參照圖2A)。 Thereby, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (see FIG. 2A).

其後,於不鏽鋼板上貼附雙面膠帶(感壓接著劑層),於其上以1.44mm間距配置複數個LED(EDI-FA4545A,尺寸:1.14mm×1.14mm×150μm,Epistar公司製造)(參照圖2B)。其後,使用加熱至90℃之真空平板壓製機,對複數個LED歷時10分鐘熱壓接密封片材(參照圖2C)。具體而言,以使螢光體層接觸LED及其周圍之雙面膠帶之方 式對複數個LED熱壓接密封片材。螢光體層及透明層藉由該熱壓接而暫時塑化。藉此,藉由密封片材,將複數個LED密封。 Thereafter, a double-sided tape (pressure-sensitive adhesive layer) was attached to a stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14 mm × 1.14 mm × 150 μm, manufactured by Epistar Co., Ltd.) were placed thereon at a pitch of 1.44 mm. (Refer to Figure 2B). Thereafter, the sealing sheet was thermocompression-bonded to a plurality of LEDs for 10 minutes using a vacuum plate press heated to 90 ° C (refer to FIG. 2C). Specifically, the phosphor layer is in contact with the LED and the surrounding double-sided tape. A plurality of LED thermocompression sealing sheets. The phosphor layer and the transparent layer are temporarily plasticized by the thermocompression bonding. Thereby, a plurality of LEDs are sealed by sealing the sheet.

其後,於150℃下進行2小時後硬化處理(C階段化),其後,藉由切斷而將密封片材單片化,從而於不鏽鋼板上製造具備1個LED、螢光體層及透明層之螢光體層密封之LED(參照圖2C)。 Thereafter, the film was cured at 150 ° C for 2 hours (C-stage), and thereafter, the sealing sheet was diced by cutting to form one LED and a phosphor layer on a stainless steel plate. A phosphor layer sealed LED of a transparent layer (refer to FIG. 2C).

繼而,將剝離片材自透明層剝離(參照圖2C之假想線)。繼而,以使複數個LED單片化之方式切斷密封LED集合體(參照圖2D)。 Then, the release sheet was peeled off from the transparent layer (refer to the imaginary line of FIG. 2C). Then, the sealed LED assembly is cut so that a plurality of LEDs are singulated (see FIG. 2D).

其後,將螢光體層密封之LED自雙面膠帶剝離(參照圖2D之箭頭及圖2E)。 Thereafter, the LED sealed by the phosphor layer is peeled off from the double-sided tape (see the arrow of FIG. 2D and FIG. 2E).

藉此,獲得螢光體層密封之LED(參照圖2E)。 Thereby, a phosphor layer sealed LED is obtained (refer to FIG. 2E).

實施例7 Example 7

對聚矽氧樹脂組合物B以相對於其等總量成為30質量%之方式混合TOSPEARL TS2000B,而以清漆之形式製備透明樹脂組合物Y。 To the polyoxyxene resin composition B, TOSPEARL TS2000B was mixed in such a manner that it was 30% by mass relative to the total amount thereof, and the transparent resin composition Y was prepared in the form of a varnish.

又,對透明樹脂組合物Y以相對於其等總量成為18質量%之方式調配YAG468(螢光體,根元特殊化學公司製造),並將該等進行混合,藉此製備螢光體樹脂組合物。 In addition, YAG468 (fluorescent body, manufactured by Genji Specialty Chemicals Co., Ltd.) was blended so as to be 18% by mass based on the total amount of the transparent resin composition Y, and these were mixed to prepare a phosphor resin combination. Things.

繼而,利用敷料器,於500μm之作為透明層之玻璃板(折射率RIt:1.52)上以加熱後之厚度成為500μm之方式塗佈螢光體樹脂組合物,其後,於135℃下加熱15分鐘,藉此於玻璃板上製備B階段之螢光體層。藉此,製備具備玻璃板與螢光體層之密封片材(參照圖2A)。 Then, the phosphor resin composition was applied to a glass plate (refractive index RIt: 1.52) of 500 μm as a transparent layer by an applicator so as to have a thickness of 500 μm after heating, and then heated at 135 ° C. In minutes, a B-stage phosphor layer was prepared on a glass plate. Thereby, a sealing sheet provided with a glass plate and a phosphor layer was prepared (refer FIG. 2A).

其後,於不鏽鋼板上貼附雙面膠帶(感壓接著劑層),於其上以1.64mm間距配置複數個LED(EDI-FA4545A,尺寸:1.14mm×1.14mm×150μm,Epistar公司製造)(參照圖2B)。其後,使用室溫之真空平板壓製機,對複數個LED歷時10分鐘壓接密封片材。具體而言,以使螢光體層接觸LED及其周圍之雙面膠帶之方式對複數個LED壓接密封片材。藉此,藉由密封片材,將複數個LED密封。 Thereafter, a double-sided tape (pressure-sensitive adhesive layer) was attached to a stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14 mm × 1.14 mm × 150 μm, manufactured by Epistar Co., Ltd.) were placed thereon at a pitch of 1.64 mm. (Refer to Figure 2B). Thereafter, the sealing sheets were crimped over a plurality of LEDs for 10 minutes using a room temperature vacuum plate press. Specifically, the sealing sheet is crimped to a plurality of LEDs in such a manner that the phosphor layer contacts the LED and the double-sided tape around it. Thereby, a plurality of LEDs are sealed by sealing the sheet.

其後,於150℃加熱2小時,使螢光體層熱硬化(C階段化),其後,藉由切斷而將密封片材單片化,從而不鏽鋼板上製造具備1個LED、螢光體層及玻璃板之螢光體層密封之LED(參照圖2C)。 Thereafter, the phosphor layer was thermally cured (C-staged) by heating at 150 ° C for 2 hours, and thereafter, the sealing sheet was diced by cutting, thereby producing one LED and fluorescent light on the stainless steel plate. The LED layer of the body layer and the phosphor layer of the glass plate is sealed (refer to FIG. 2C).

繼而,以使複數個LED單片化之方式切斷密封LED集合體(參照圖2D)。 Then, the sealed LED assembly is cut so that a plurality of LEDs are singulated (see FIG. 2D).

其後,將螢光體層密封之LED自雙面膠帶剝離(參照圖2D之箭頭及圖2E)。 Thereafter, the LED sealed by the phosphor layer is peeled off from the double-sided tape (see the arrow of FIG. 2D and FIG. 2E).

藉此,獲得螢光體層密封之LED(參照圖2E)。 Thereby, a phosphor layer sealed LED is obtained (refer to FIG. 2E).

實施例8 Example 8

對聚矽氧樹脂組合物A以相對於其等總量成為50質量%之方式混合無機填料A,而以清漆之形式製備透明樹脂組合物X。透明樹脂組合物X之折射率RIt為1.56。 The inorganic filler A was mixed with the polyoxyxene resin composition A in an amount of 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index RIt of the transparent resin composition X was 1.56.

對透明樹脂組合物X以相對於其等總量成為12質量%之方式調配YAG468(螢光體,根元特殊化學公司製造),並將該等進行混合,藉此製備螢光體樹脂組合物。 YAG468 (fluorescent body, manufactured by Genji Specialty Chemicals Co., Ltd.) was blended so as to be 12% by mass based on the total amount of the transparent resin composition X, and these were mixed to prepare a phosphor resin composition.

繼而,對LR7665以相對於其等總量成為30質量%之方式混合TOSPEARL TS2000B而獲得清漆(折射率RIt:1.41),利用敷料器,於厚度50μm之剝離片材(PTE片材,商品名「SS4C」,Nippa公司製造)之表面以加熱後之厚度成為500μm之方式塗佈所獲得之清漆,其後於100℃下加熱10分鐘,藉此製作C階段之透明層。 Then, the LR7665 was mixed with TOSPEARL TS2000B to obtain a varnish (refractive index: RIt: 1.41), and a release sheet having a thickness of 50 μm (PTE sheet, trade name) was obtained by an applicator. The surface of the SS4C", manufactured by Nippa Co., Ltd.) was applied to the varnish obtained by heating to a thickness of 500 μm, and then heated at 100 ° C for 10 minutes to prepare a C-stage transparent layer.

繼而,利用敷料器,於透明層之表面(上表面)以加熱後之厚度成為500μm之方式塗佈螢光體樹脂組合物,其後於80℃下加熱11分鐘,藉此製作B階段之螢光體層。 Then, the phosphor resin composition was applied to the surface (upper surface) of the transparent layer by a thickness of 500 μm after heating by an applicator, and then heated at 80 ° C for 11 minutes to prepare a B-stage firefly. Light body layer.

藉此,製作包含剝離片材、透明層及螢光體層之密封片材(參照圖2A)。 Thereby, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (see FIG. 2A).

其後,於不鏽鋼板上貼附雙面膠帶(感壓接著劑層),於其上以 1.64mm間距配置複數個LED(EDI-FA4545A,尺寸:1.14mm×1.14mm×150μm,Epistar公司製造)(參照圖2B)。其後,使用加熱至90℃之真空平板壓製機,對複數個LED歷時10分鐘熱壓接密封片材(參照圖2C)。具體而言,以使螢光體層接觸LED及其周圍之雙面膠帶之方式對複數個LED熱壓接密封片材。螢光體層藉由該熱壓接而暫時塑化。藉此,藉由密封片材,將複數個LED密封。 Thereafter, a double-sided tape (pressure-sensitive adhesive layer) is attached to the stainless steel plate, and A plurality of LEDs (EDI-FA4545A, size: 1.14 mm × 1.14 mm × 150 μm, manufactured by Epistar Co., Ltd.) were placed at a pitch of 1.64 mm (refer to Fig. 2B). Thereafter, the sealing sheet was thermocompression-bonded to a plurality of LEDs for 10 minutes using a vacuum plate press heated to 90 ° C (refer to FIG. 2C). Specifically, the sealing sheet is thermocompression bonded to a plurality of LEDs in such a manner that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer is temporarily plasticized by the thermocompression bonding. Thereby, a plurality of LEDs are sealed by sealing the sheet.

其後,於150℃下進行2小時後硬化處理。藉此,將螢光體層進行C階段化。其後,藉由切斷而將密封片材單片化,從而於不鏽鋼板上製造具備1個LED、螢光體層及透明層之螢光體層密封之LED(參照圖2C)。 Thereafter, the curing treatment was carried out at 150 ° C for 2 hours. Thereby, the phosphor layer is C-staged. Thereafter, the sealing sheet was diced by cutting, and an LED having a phosphor layer sealed with one LED, a phosphor layer, and a transparent layer was produced on a stainless steel plate (see FIG. 2C).

繼而,將剝離片材自透明層剝離(參照圖2C之假想線)。繼而,以使複數個LED單片化之方式切斷密封LED集合體(參照圖2D)。 Then, the release sheet was peeled off from the transparent layer (refer to the imaginary line of FIG. 2C). Then, the sealed LED assembly is cut so that a plurality of LEDs are singulated (see FIG. 2D).

其後,將螢光體層密封之LED自雙面膠帶剝離(參照圖2D之箭頭及圖2E)。 Thereafter, the LED sealed by the phosphor layer is peeled off from the double-sided tape (see the arrow of FIG. 2D and FIG. 2E).

藉此,獲得螢光體層密封之LED(參照圖2E)。 Thereby, a phosphor layer sealed LED is obtained (refer to FIG. 2E).

實施例9 Example 9

對聚矽氧樹脂組合物A 100質量份以相對於其等總量成為17質量%之方式混合YAG468(根元特殊化學公司製造),而以清漆之形式製備螢光體樹脂組合物。 YAG468 (manufactured by Roots Specialty Chemical Co., Ltd.) was mixed with 100 parts by mass of the polyoxyxene resin composition A in an amount of 17% by mass based on the total amount, and a phosphor resin composition was prepared in the form of a varnish.

於不鏽鋼板上貼附雙面膠帶,於其上搭載(配置)1個LED(EDI-FA4545A,尺寸:1.14mm×1.14mm×150μm,Epistar公司製造)(參照圖3A)。 A double-sided tape was attached to a stainless steel plate, and one LED (EDI-FA4545A, size: 1.14 mm × 1.14 mm × 150 μm, manufactured by Epistar Co., Ltd.) was mounted (arranged) thereon (see FIG. 3A).

另外,製作第1障壁及第2障壁(參照圖3A及圖3D)。 Further, the first barrier rib and the second barrier rib (see FIGS. 3A and 3D) are produced.

即,以厚度500μm塗佈LR7665(折射率1.41),於100℃下固化(熱硬化)10分鐘,繼而,將硬化片材加工成外框尺寸10mm×10mm、內框尺寸(內部尺寸)1.64mm×1.64mm之矩形框狀,製作第1障壁(參照 圖3A)。即,第1障壁之外形尺寸為10mm×10mm,矩形開口部之內部尺寸為1.64mm×1.64mm。 Namely, LR7665 (refractive index of 1.41) was applied at a thickness of 500 μm, and cured (thermosetting) at 100 ° C for 10 minutes, and then the cured sheet was processed into a frame size of 10 mm × 10 mm and an inner frame size (internal size) of 1.64 mm. ×1.64mm rectangular frame shape, making the first barrier (refer to Figure 3A). That is, the outer shape of the first barrier rib is 10 mm × 10 mm, and the inner dimension of the rectangular opening is 1.64 mm × 1.64 mm.

繼而,將厚度變更為1mm,除此以外,以與第1障壁相同之方式製作第2障壁(參照圖3D)。 Then, the second barrier rib (see FIG. 3D) was produced in the same manner as the first barrier rib except that the thickness was changed to 1 mm.

繼而於不鏽鋼板上,在LED之周圍設置第1障壁(參照圖3B)。繼而,將螢光體樹脂組合物之清漆滴於第1障壁之第1開口部內,以液厚成為500μm之方式調整量,於100℃下歷時10分鐘使螢光體樹脂組合物B階段化(參照圖3C)。藉此,獲得B階段狀態之螢光體層。其後去除第1障壁(參照圖3C之箭頭)。 Then, on the stainless steel plate, a first barrier is provided around the LED (see FIG. 3B). Then, the varnish of the phosphor resin composition was dropped into the first opening of the first barrier rib, and the amount of the varnish of the first barrier rib was adjusted to a thickness of 500 μm, and the phosphor resin composition was B-staged at 100 ° C for 10 minutes ( Refer to Figure 3C). Thereby, a phosphor layer in a B-stage state is obtained. Thereafter, the first barrier rib is removed (see the arrow of FIG. 3C).

進而於不鏽鋼板上,在螢光體層之周圍設置第2障壁(參照圖3E)。其後,將聚矽氧樹脂組合物A滴於第2障壁之第2開口部內,以使合計厚度成為1mm之方式調整液量。繼而,使聚矽氧樹脂組合物A於150℃下歷時2小時進行熱硬化(C階段化),獲得C階段狀態之透明層(參照圖4F)。繼而,沿螢光體層與透明層之交界(界面)進行切割(參照圖4G),製備螢光體層密封之LED(參照圖4H)。 Further, on the stainless steel plate, a second barrier is provided around the phosphor layer (see FIG. 3E). Thereafter, the polyoxyphthalocene resin composition A was dropped into the second opening of the second barrier rib, and the amount of the liquid was adjusted so that the total thickness became 1 mm. Then, the polyoxyphthalocene resin composition A was thermally cured (C-staged) at 150 ° C for 2 hours to obtain a transparent layer in a C-stage state (see FIG. 4F ). Then, cutting is performed along the boundary (interface) between the phosphor layer and the transparent layer (see FIG. 4G) to prepare a phosphor layer-sealed LED (see FIG. 4H).

實施例10 Example 10

對聚矽氧樹脂組合物A以相對於其等總量成為18質量%之方式混合YAG468(根元特殊化學公司製造),而以清漆之形式製備螢光體樹脂組合物。 The phosphor resin composition was prepared in the form of a varnish by mixing YAG468 (manufactured by Roots Specialty Chemical Co., Ltd.) in an amount of 18% by mass based on the total amount of the polyoxyxyl resin composition A.

於不鏽鋼板上貼附雙面膠帶,於其上搭載(配置)1個LED(EDI-FA4545A,尺寸:1.41mm×1.41mm×150μm,Epistar公司製造)(參照圖3A)。 A double-sided tape was attached to a stainless steel plate, and one LED (EDI-FA4545A, size: 1.41 mm × 1.41 mm × 150 μm, manufactured by Epistar Co., Ltd.) was mounted (arranged) thereon (see FIG. 3A).

另外,製作第1障壁及第2障壁(參照圖3A及圖3D)。 Further, the first barrier rib and the second barrier rib (see FIGS. 3A and 3D) are produced.

即,以厚度500μm塗佈LR7665(折射率1.41),於100℃下歷時10分鐘進行固化(熱硬化),繼而,將硬化片材加工成外框尺寸10mm×10mm、內框尺寸(內部尺寸)1.64mm×1.64mm之矩形框狀,從而製作第 1障壁(參照圖3A)。即,第1障壁之外形尺寸為10mm×10mm,矩形開口部之內部尺寸為1.64mm×1.64mm。 That is, LR7665 (refractive index of 1.41) was applied at a thickness of 500 μm, and curing (thermosetting) was performed at 100 ° C for 10 minutes, and then the cured sheet was processed into a frame size of 10 mm × 10 mm and an inner frame size (internal size). 1.64mm × 1.64mm rectangular frame shape, thus making the first 1 barrier (see Figure 3A). That is, the outer shape of the first barrier rib is 10 mm × 10 mm, and the inner dimension of the rectangular opening is 1.64 mm × 1.64 mm.

繼而,將厚度變更為1mm,除此以外,以與第1障壁相同之方式製作第2障壁(參照圖3D)。 Then, the second barrier rib (see FIG. 3D) was produced in the same manner as the first barrier rib except that the thickness was changed to 1 mm.

繼而於不鏽鋼板上,在LED之周圍設置第1障壁(參照圖3B)。繼而,將螢光體樹脂組合物之清漆滴於第1障壁之第1開口部內,以使液厚成為500μm之方式調整量,於100℃下歷時10分鐘使螢光體樹脂組合物B階段化(參照圖3C)。藉此,獲得B階段狀態之螢光體層。其後去除第1障壁(參照圖3C之箭頭)。 Then, on the stainless steel plate, a first barrier is provided around the LED (see FIG. 3B). Then, the varnish of the phosphor resin composition was dropped into the first opening of the first barrier rib to adjust the amount so that the liquid thickness became 500 μm, and the phosphor resin composition was B-staged at 100 ° C for 10 minutes. (Refer to Figure 3C). Thereby, a phosphor layer in a B-stage state is obtained. Thereafter, the first barrier rib is removed (see the arrow of FIG. 3C).

進而,於不鏽鋼板上,在螢光體層之周圍設置第2障壁(參照圖3E)。其後,將LR7665(折射率1.41)滴於第2障壁之第2開口部內,以使合計厚度成為1mm之方式調整液量。繼而,使聚矽氧樹脂組合物A於150℃下歷時2時間進行熱硬化(C階段化),獲得C階段狀態之透明層(參照圖4F)。繼而,沿螢光體層統一透明層之交界(界面)進行切割(參照圖4G),製備螢光體層密封之LED(參照圖4H)。 Further, on the stainless steel plate, a second barrier is provided around the phosphor layer (see FIG. 3E). Thereafter, LR7665 (refractive index: 1.41) was dropped into the second opening of the second barrier rib, and the amount of liquid was adjusted so that the total thickness became 1 mm. Then, the polyoxyxylene resin composition A was thermally cured (C-staged) at 150 ° C for 2 hours to obtain a transparent layer in a C-stage state (see FIG. 4F ). Then, cutting is performed along the boundary (interface) of the uniform transparent layer of the phosphor layer (see FIG. 4G), and a phosphor layer sealed LED is prepared (see FIG. 4H).

實施例11 Example 11

對聚矽氧樹脂組合物A以相對於其等總量成為50質量%之方式混合無機填料A,而以清漆之形式製備透明樹脂組合物X。透明樹脂組合物X之折射率為1.56。 The inorganic filler A was mixed with the polyoxyxene resin composition A in an amount of 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index of the transparent resin composition X was 1.56.

對透明樹脂組合物X以相對於其等總量成為50質量%之方式調配YAG468(螢光體,根元特殊化學公司製造),並將該等進行混合,藉此製備螢光體樹脂組合物。 YAG468 (fluorescent body, manufactured by Genji Specialty Chemicals Co., Ltd.) was blended so as to be 50% by mass based on the total amount of the transparent resin composition X, and these were mixed to prepare a phosphor resin composition.

其後,利用敷料器,於厚度50μm之剝離片材(PTE片材,商品名「SS4C」,Nippa公司製造)之表面以加熱後之厚度成為800μm之方式塗佈透明樹脂組合物X,其後於90℃下加熱20分鐘,藉此製作B階段之透明層。 Then, the transparent resin composition X was applied to the surface of the release sheet (PTE sheet, trade name "SS4C", manufactured by Nippa Co., Ltd.) having a thickness of 50 μm so as to have a thickness of 800 μm after heating by an applicator. The B-stage transparent layer was produced by heating at 90 ° C for 20 minutes.

繼而,利用敷料器,於透明層之表面(上表面)以加熱後之厚度成為200μm之方式塗佈螢光體樹脂組合物,其後於80℃下加熱11分鐘,藉此製作B階段之螢光體層。 Then, the phosphor resin composition was applied to the surface (upper surface) of the transparent layer by a thickness of 200 μm after heating by an applicator, and then heated at 80 ° C for 11 minutes to prepare a B-stage firefly. Light body layer.

藉此,製作包含剝離片材、透明層及螢光體層之密封片材(參照圖2A)。 Thereby, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (see FIG. 2A).

其後於不鏽鋼板上貼附雙面膠帶(感壓接著劑層),於其上以1.24mm間距配置複數個LED(EDI-FA4545A,尺寸:1.14mm×1.14mm×150μm,Epistar公司製造)(參照圖2B)。其後,使用加熱至90℃之真空平板壓製機,對複數個LED歷時10分鐘熱壓接密封片材(參照圖2C)。具體而言,以使螢光體層接觸LED及其周圍之雙面膠帶之方式對複數個LED熱壓接密封片材。螢光體層及透明層藉由該熱壓接而暫時塑化。藉此,藉由密封片材,將複數個LED密封。 Thereafter, a double-sided tape (pressure-sensitive adhesive layer) was attached to the stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14 mm × 1.14 mm × 150 μm, manufactured by Epistar Co., Ltd.) were placed thereon at a pitch of 1.24 mm. Refer to Figure 2B). Thereafter, the sealing sheet was thermocompression-bonded to a plurality of LEDs for 10 minutes using a vacuum plate press heated to 90 ° C (refer to FIG. 2C). Specifically, the sealing sheet is thermocompression bonded to a plurality of LEDs in such a manner that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer and the transparent layer are temporarily plasticized by the thermocompression bonding. Thereby, a plurality of LEDs are sealed by sealing the sheet.

其後,於150℃下進行2小時後硬化處理。藉此,將螢光體層及透明層進行C階段化。其後,藉由切斷而將密封片材單片化,從而於不鏽鋼板上製造具備1個LED、螢光體層及透明層之螢光體層密封之LED(參照圖2C)。 Thereafter, the curing treatment was carried out at 150 ° C for 2 hours. Thereby, the phosphor layer and the transparent layer are C-staged. Thereafter, the sealing sheet was diced by cutting, and an LED having a phosphor layer sealed with one LED, a phosphor layer, and a transparent layer was produced on a stainless steel plate (see FIG. 2C).

繼而,將剝離片材自透明層剝離(參照圖2C之假想線)。繼而,以使複數個LED單片化之方式切斷密封LED集合體(參照圖2D)。 Then, the release sheet was peeled off from the transparent layer (refer to the imaginary line of FIG. 2C). Then, the sealed LED assembly is cut so that a plurality of LEDs are singulated (see FIG. 2D).

其後,將螢光體層密封之LED自雙面膠帶剝離(參照圖2D之箭頭及圖2E)。 Thereafter, the LED sealed by the phosphor layer is peeled off from the double-sided tape (see the arrow of FIG. 2D and FIG. 2E).

藉此,獲得螢光體層密封之LED(參照圖2E)。 Thereby, a phosphor layer sealed LED is obtained (refer to FIG. 2E).

實施例12 Example 12

對聚矽氧樹脂組合物A以相對於其等總量成為50質量%之方式混合無機填料A,而以清漆之形式製備透明樹脂組合物X。透明樹脂組合物X之折射率為1.56。 The inorganic filler A was mixed with the polyoxyxene resin composition A in an amount of 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index of the transparent resin composition X was 1.56.

對透明樹脂組合物X以相對於其等總量成為30質量%之方式調配 YAG468(螢光體,根元特殊化學公司製造),並將該等進行混合,藉此製備螢光體樹脂組合物。 The transparent resin composition X is formulated in such a manner as to be 30% by mass relative to the total amount thereof. YAG468 (fluorescent body, manufactured by Root Element Specialty Chemical Co., Ltd.), and these were mixed, thereby preparing a phosphor resin composition.

其後,利用敷料器,於厚度50μm之剝離片材(PTE片材,商品名「SS4C」,Nippa公司製造)之表面以加熱後之厚度成為50μm之方式塗佈透明樹脂組合物X,其後於90℃下加熱20分鐘,藉此製作B階段之透明層。 Then, the transparent resin composition X was applied to the surface of the release sheet (PTE sheet, trade name "SS4C", manufactured by Nippa Co., Ltd.) having a thickness of 50 μm so as to have a thickness of 50 μm after heating by an applicator. The B-stage transparent layer was produced by heating at 90 ° C for 20 minutes.

繼而,利用敷料器,於透明層之表面(上表面)以加熱後之厚度成為300μm之方式塗佈螢光體樹脂組合物,其後於80℃下加熱11分鐘,藉此製作B階段之螢光體層。 Then, the phosphor resin composition was applied to the surface (upper surface) of the transparent layer by a thickness of 300 μm after heating by an applicator, and then heated at 80 ° C for 11 minutes to prepare a B-stage firefly. Light body layer.

藉此,製作包含剝離片材、透明層及螢光體層之密封片材(參照圖2A)。 Thereby, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (see FIG. 2A).

其後,於不鏽鋼板上貼附雙面膠帶(感壓接著劑層),於其上以1.34mm間距配置複數個LED(EDI-FA4545A,尺寸:1.14mm×1.14mm×150μm,Epistar公司製造)(參照圖2B)。其後,使用加熱至90℃之真空平板壓製機,對複數個LED歷時10分鐘熱壓接密封片材(參照圖2C)。具體而言,以使螢光體層接觸LED及其周圍之雙面膠帶之方式對複數個LED熱壓接密封片材。螢光體層及透明層藉由該熱壓接而暫時塑化。藉此,藉由密封片材,將複數個LED密封。 Thereafter, a double-sided tape (pressure-sensitive adhesive layer) was attached to a stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14 mm × 1.14 mm × 150 μm, manufactured by Epistar Co., Ltd.) were placed thereon at a pitch of 1.34 mm. (Refer to Figure 2B). Thereafter, the sealing sheet was thermocompression-bonded to a plurality of LEDs for 10 minutes using a vacuum plate press heated to 90 ° C (refer to FIG. 2C). Specifically, the sealing sheet is thermocompression bonded to a plurality of LEDs in such a manner that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer and the transparent layer are temporarily plasticized by the thermocompression bonding. Thereby, a plurality of LEDs are sealed by sealing the sheet.

其後,於150℃下進行2小時後硬化處理。藉此,將螢光體層及透明層進行C階段化。其後,藉由切斷而將密封片材單片化,從而於不鏽鋼板上製造具備1個LED、螢光體層及透明層之螢光體層密封之LED(參照圖2C)。 Thereafter, the curing treatment was carried out at 150 ° C for 2 hours. Thereby, the phosphor layer and the transparent layer are C-staged. Thereafter, the sealing sheet was diced by cutting, and an LED having a phosphor layer sealed with one LED, a phosphor layer, and a transparent layer was produced on a stainless steel plate (see FIG. 2C).

繼而,將剝離片材自透明層剝離(參照圖2C之假想線)。繼而,以使複數個LED單片化之方式切斷密封LED集合體(參照圖2D)。 Then, the release sheet was peeled off from the transparent layer (refer to the imaginary line of FIG. 2C). Then, the sealed LED assembly is cut so that a plurality of LEDs are singulated (see FIG. 2D).

其後,將螢光體層密封之LED自雙面膠帶剝離(參照圖2D之箭頭及圖2E)。 Thereafter, the LED sealed by the phosphor layer is peeled off from the double-sided tape (see the arrow of FIG. 2D and FIG. 2E).

藉此,獲得螢光體層密封之LED(參照圖2E)。 Thereby, a phosphor layer sealed LED is obtained (refer to FIG. 2E).

實施例13 Example 13

對聚矽氧樹脂組合物A以相對於其等總量成為50質量%之方式混合無機填料A,而以清漆之形式製備透明樹脂組合物X。透明樹脂組合物X之折射率為1.56。 The inorganic filler A was mixed with the polyoxyxene resin composition A in an amount of 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index of the transparent resin composition X was 1.56.

對透明樹脂組合物X以相對於其等總量成為8質量份之方式調配YAG468(螢光體,根元特殊化學公司製造),並將該等進行混合,藉此製備螢光體樹脂組合物。 YAG468 (fluorescent body, manufactured by Root Element Specialty Chemical Co., Ltd.) was blended in an amount of 8 parts by mass based on the total amount of the transparent resin composition X, and these were mixed to prepare a phosphor resin composition.

其後,利用敷料器,於厚度50μm之剝離片材(PTE片材,商品名「SS4C」,Nippa公司製造)之表面以加熱後之厚度成為100μm之方式塗佈透明樹脂組合物X,其後於90℃下加熱20分鐘,藉此製作B階段之透明層。 Then, the transparent resin composition X was applied to the surface of the release sheet (PTE sheet, trade name "SS4C", manufactured by Nippa Co., Ltd.) having a thickness of 50 μm so as to have a thickness of 100 μm after heating by an applicator. The B-stage transparent layer was produced by heating at 90 ° C for 20 minutes.

繼而,利用敷料器,於透明層之表面(上表面)以加熱後之厚度成為900μm之方式塗佈螢光體樹脂組合物,其後於80℃下加熱11分鐘,藉此製作B階段之螢光體層。 Then, the phosphor resin composition was applied to the surface (upper surface) of the transparent layer by the applicator so that the thickness after heating became 900 μm, and then heated at 80 ° C for 11 minutes to prepare a B-stage firefly. Light body layer.

藉此,製作包含剝離片材、透明層及螢光體層之密封片材(參照圖2A)。 Thereby, a sealing sheet including a release sheet, a transparent layer, and a phosphor layer was produced (see FIG. 2A).

其後,於不鏽鋼板上貼附雙面膠帶(感壓接著劑層),於其上以1.64mm間距配置複數個LED(EDI-FA4545A,尺寸:1.14mm×1.14mm×150μm,Epistar公司製造)(參照圖2B)。其後,使用加熱至90℃之真空平板壓製機,對複數個LED歷時10分鐘熱壓接密封片材(參照圖2C)。具體而言,以使螢光體層接觸LED及其周圍之雙面膠帶之方式對複數個LED熱壓接密封片材。螢光體層及透明層藉由該熱壓接而暫時塑化。藉此,藉由密封片材,將複數個LED密封。 Thereafter, a double-sided tape (pressure-sensitive adhesive layer) was attached to a stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14 mm × 1.14 mm × 150 μm, manufactured by Epistar Co., Ltd.) were placed thereon at a pitch of 1.64 mm. (Refer to Figure 2B). Thereafter, the sealing sheet was thermocompression-bonded to a plurality of LEDs for 10 minutes using a vacuum plate press heated to 90 ° C (refer to FIG. 2C). Specifically, the sealing sheet is thermocompression bonded to a plurality of LEDs in such a manner that the phosphor layer contacts the LED and the double-sided tape around it. The phosphor layer and the transparent layer are temporarily plasticized by the thermocompression bonding. Thereby, a plurality of LEDs are sealed by sealing the sheet.

其後,於150℃下進行2小時後硬化處理。藉此,將螢光體層及透明層進行C階段化。其後,藉由切斷而將密封片材單片化,從而於 不鏽鋼板上製造具備1個LED、螢光體層及透明層之螢光體層密封之LED(參照圖2C)。 Thereafter, the curing treatment was carried out at 150 ° C for 2 hours. Thereby, the phosphor layer and the transparent layer are C-staged. Thereafter, the sealing sheet is singulated by cutting, thereby An LED having a phosphor layer sealed with one LED, a phosphor layer, and a transparent layer was produced on a stainless steel plate (see FIG. 2C).

繼而,將剝離片材自透明層剝離(參照圖2C之假想線)。繼而,以使複數個LED單片化之方式切斷密封LED集合體(參照圖2D)。 Then, the release sheet was peeled off from the transparent layer (refer to the imaginary line of FIG. 2C). Then, the sealed LED assembly is cut so that a plurality of LEDs are singulated (see FIG. 2D).

其後,將螢光體層密封之LED自雙面膠帶剝離(參照圖2D之箭頭及圖2E)。 Thereafter, the LED sealed by the phosphor layer is peeled off from the double-sided tape (see the arrow of FIG. 2D and FIG. 2E).

藉此,獲得螢光體層密封之LED(參照圖2E)。 Thereby, a phosphor layer sealed LED is obtained (refer to FIG. 2E).

實施例14 Example 14

對聚矽氧樹脂組合物A以相對於其等總量成為50質量%之方式混合無機填料A,而以清漆之形式製備透明樹脂組合物X。透明樹脂組合物X之折射率為1.56。 The inorganic filler A was mixed with the polyoxyxene resin composition A in an amount of 50% by mass relative to the total amount thereof, and the transparent resin composition X was prepared in the form of a varnish. The refractive index of the transparent resin composition X was 1.56.

對透明樹脂組合物X以相對於其等總量成為28質量%之方式調配YAG468(螢光體,根元特殊化學公司製造),並將該等進行混合,藉此製備螢光體樹脂組合物。 YAG468 (fluorescent body, manufactured by Genji Specialty Chemicals Co., Ltd.) was blended so as to be 28% by mass based on the total amount of the transparent resin composition X, and these were mixed to prepare a phosphor resin composition.

其後,利用敷料器,於厚度50μm之剝離片材(PTE片材,商品名「SS4C」,Nippa公司製造)之表面以加熱後之厚度成為150μm之方式塗佈螢光體樹脂組合物,其後於90℃下加熱20分鐘,藉此製作B階段之螢光體層。藉此,製作包含剝離片材與螢光體層之螢光密封片材(螢光體層準備步驟,參照圖7A)。 Then, the surface of the release sheet (PTE sheet, trade name "SS4C", manufactured by Nippa Co., Ltd.) having a thickness of 50 μm was coated with a phosphor resin composition so as to have a thickness of 150 μm after heating, using an applicator. Thereafter, the film was heated at 90 ° C for 20 minutes to prepare a B-stage phosphor layer. Thereby, a fluorescent sealing sheet including a release sheet and a phosphor layer was produced (the phosphor layer preparation step, see FIG. 7A).

其後,於不鏽鋼板上貼附雙面膠帶(感壓接著劑層),於其上以1.54mm間距配置複數個LED(EDI-FA4545A,尺寸:1.14mm×1.14mm×150μm,Epistar公司製造)。其後,使用加熱至90℃之真空平板壓製機,對複數個螢光LED歷時10分鐘熱壓接密封片材。具體而言,使用真空平板壓製機,以使螢光體層接觸LED及其周圍之雙面膠帶之方式對複數個LED螢光熱壓接密封片材(螢光體層配置步驟,參照圖7B)。螢光體層之上表面形成為平坦狀。 Thereafter, a double-sided tape (pressure-sensitive adhesive layer) was attached to a stainless steel plate, and a plurality of LEDs (EDI-FA4545A, size: 1.14 mm × 1.14 mm × 150 μm, manufactured by Epistar Co., Ltd.) were placed thereon at a pitch of 1.54 mm. . Thereafter, the sealing sheets were thermocompression-bonded to a plurality of fluorescent LEDs for 10 minutes using a vacuum plate press heated to 90 °C. Specifically, a plurality of LED fluorescent thermocompression sealing sheets are applied to the plurality of LED fluorescent thermocompression sealing sheets (the phosphor layer disposing step, see FIG. 7B) by using a vacuum flat pressing machine so that the phosphor layer contacts the LED and the double-sided tape around it. The upper surface of the phosphor layer is formed into a flat shape.

其後,將剝離片材自螢光體層剝離(參照圖7C)。 Thereafter, the release sheet was peeled off from the phosphor layer (see FIG. 7C).

繼而,將相對於LED位於遠距離之螢光體層去除,與此同時將螢光體層密封之LED單片化(單片化/去除步驟,參照圖7D)。即,藉由壁厚200μm之晶圓切割鋸,切斷透明片材。 Then, the phosphor layer which is located at a long distance with respect to the LED is removed, and at the same time, the LED sealed by the phosphor layer is singulated (the singulation/removal step, see FIG. 7D). That is, the transparent sheet was cut by a saw cutting blade having a wall thickness of 200 μm.

藉此,獲得螢光體層密封之LED(參照圖7F)。 Thereby, a phosphor layer sealed LED is obtained (refer to FIG. 7F).

其後,將複數個螢光體層密封之LED在前後方向及左右方向相互隔開間隔地排列配置於第2支持板(參照圖8G)。 Thereafter, the LEDs in which a plurality of phosphor layers are sealed are arranged in the second support plate at intervals in the front-rear direction and the left-right direction (see FIG. 8G).

又,利用敷料器,於厚度50μm之第2剝離片材(PTE片材,商品名「SS4C」,Nippa公司製造)之表面以加熱後之厚度成為850μm之方式塗佈透明樹脂組合物X,其後,於90℃下加熱20分鐘,藉此製作B階段之透明層。藉此,製作包含第2剝離片材與透明層之透明片材(透明層準備步驟,參照圖8G)。 In addition, the surface of the second release sheet (PTE sheet, trade name "SS4C", manufactured by Nippa Co., Ltd.) having a thickness of 50 μm was coated with a transparent resin composition X so as to have a thickness of 850 μm after heating. Thereafter, the film was heated at 90 ° C for 20 minutes to prepare a B-stage transparent layer. Thereby, a transparent sheet including the second release sheet and the transparent layer was produced (the transparent layer preparation step, see FIG. 8G).

繼而,藉由透明片材之透明層,將被覆複數個LED之複數個螢光體層被覆(透明層配置步驟,參照圖8H)。 Then, a plurality of phosphor layers covering a plurality of LEDs are covered by a transparent layer of a transparent sheet (transparent layer disposing step, see FIG. 8H).

繼而,將第2剝離片材自透明層剝離(圖8I參照)。繼而,以使複數個LED單片化之方式切斷密封LED集合體(參照圖8J)。 Then, the second release sheet was peeled off from the transparent layer (see FIG. 8I for reference). Then, the sealed LED assembly is cut so that a plurality of LEDs are singulated (see FIG. 8J).

其後,將螢光體層密封之LED自雙面膠帶剝離(參照圖8J之箭頭)。 Thereafter, the LED sealed with the phosphor layer is peeled off from the double-sided tape (refer to the arrow of FIG. 8J).

藉此,獲得螢光體層密封之LED(參照圖8K)。 Thereby, a phosphor layer sealed LED is obtained (refer to FIG. 8K).

比較例1 Comparative example 1

製作未形成透明層之被覆片材,藉由該被覆片材之透明層將LED被覆,除此以外,與實施例8同樣地進行處理,獲得螢光體層密封之LED(參照圖16)。 A phosphor sheet-sealed LED (see FIG. 16) was obtained in the same manner as in Example 8 except that the coated sheet in which the transparent layer was not formed was formed by coating the LED with the transparent layer of the coated sheet.

比較例2 Comparative example 2

製作未形成透明層之被覆片材,藉由該被覆片材之透明層將LED被覆,除此以外,與實施例14同樣地進行處理,獲得螢光體層密封之 LED(參照圖17)。 A cover sheet in which a transparent layer was not formed was produced, and the LED was coated with a transparent layer of the coated sheet, and treated in the same manner as in Example 14 to obtain a phosphor layer seal. LED (refer to Figure 17).

<評價> <evaluation>

[發光強度] [light intensity]

將各實施例及各比較例之螢光體層密封之LED安裝至基板,製造LED裝置(參照圖1之假想線、圖2F、圖16之假想線、圖17之假想線)。繼而,於總光束測定裝置中以電流300mA使LED裝置點亮,求出發光強度。 The LEDs sealed with the phosphor layers of the respective examples and the comparative examples were mounted on a substrate to fabricate an LED device (see the imaginary line of FIG. 1 , the imaginary line of FIGS. 2F and 16 , and the imaginary line of FIG. 17 ). Then, in the total beam measuring device, the LED device was turned on with a current of 300 mA, and the luminous intensity was obtained.

基於下述基準,對所獲得之發光強度進行評價。 The obtained luminescence intensity was evaluated based on the following criteria.

A:發光強度為135lm以上 A: The luminous intensity is 135 lm or more

B:發光強度為128lm以上、未達135lm B: The luminous intensity is 128 lm or more and less than 135 lm.

C:發光強度為118lm以上、未達128lm C: The luminous intensity is 118 lm or more and less than 128 lm.

D:發光強度為110lm以上、未達118lm D: The luminous intensity is 110 lm or more and less than 118 lm.

E:發光強度未達110lm E: The luminous intensity is less than 110lm

[色均勻性] [Color uniformity]

將各實施例及各比較例之螢光體層密封之LED各10個(n=10)安裝至基板,製造LED裝置(參照圖1之假想線、圖2F、圖16之假想線、圖17之假想線)。繼而,對光學特性之CIE y進行測定,求出10個螢光體層密封之LED之偏差。並且,將最大值與最小值之差為0.03以下之情形評價為○,將超過0.03之情形評價為×。 Each of the LEDs (n=10) of the phosphor layer sealed in each of the examples and the comparative examples was mounted on a substrate to manufacture an LED device (see the imaginary line of FIG. 1 , the imaginary line of FIG. 2F and FIG. 16 , and FIG. 17 ). Imaginary line). Then, the CIE y of the optical characteristics was measured, and the deviation of the LEDs sealed by the ten phosphor layers was determined. Further, the case where the difference between the maximum value and the minimum value was 0.03 or less was evaluated as ○, and the case where the difference between the maximum value and the minimum value was 0.03 was evaluated as ×.

[配光性(色不均)] [light distribution (color unevenness)]

將各實施例及各比較例之螢光體層密封之LED安裝至基板,製造LED裝置(參照圖1之假想線、圖2F、圖16之假想線、圖17之假想線)。繼而,對該LED裝置利用配光測定裝置(大塚電子公司製造之GP-7),以5°為單位,測定-85°~85°方向之色度。求出各方向上之色度偏差。並且,將最大值與最小值之差為0.02以下之情形評價為○,將超過0.02之情形評價為×。 The LEDs sealed with the phosphor layers of the respective examples and the comparative examples were mounted on a substrate to fabricate an LED device (see the imaginary line of FIG. 1 , the imaginary line of FIGS. 2F and 16 , and the imaginary line of FIG. 17 ). Then, the chromaticity of the -85° to 85° direction was measured in units of 5° using a light distribution measuring device (GP-7 manufactured by Otsuka Electronics Co., Ltd.). Find the chromaticity deviation in each direction. Further, the case where the difference between the maximum value and the minimum value was 0.02 or less was evaluated as ○, and the case where the difference between 0.02 and 0.02 was exceeded was evaluated as ×.

[可靠性(黑焦)] [reliability (black focus)]

將各實施例及各比較例之螢光體層密封之LED安裝至基板,製造LED裝置(參照圖1之假想線、圖2F、圖16之假想線、圖17之假想線)。繼而,於總光束測定裝置中以電流1A使LED裝置點亮1,000小時,藉由目視觀察螢光體層及透明層,根據以下之基準,對螢光體層密封之LED及LED裝置之可靠性進行評價。 The LEDs sealed with the phosphor layers of the respective examples and the comparative examples were mounted on a substrate to fabricate an LED device (see the imaginary line of FIG. 1 , the imaginary line of FIGS. 2F and 16 , and the imaginary line of FIG. 17 ). Then, in the total beam measuring device, the LED device was lit for 1,000 hours with a current of 1 A, and the phosphor layer and the transparent layer were visually observed, and the reliability of the phosphor layer-sealed LED and the LED device was evaluated based on the following criteria. .

○:未於螢光體層或透明層觀察到黑焦。 ○: Black coke was not observed in the phosphor layer or the transparent layer.

△:於螢光體層或透明層稍觀察到黑焦。 △: Black coke was slightly observed in the phosphor layer or the transparent layer.

×:於螢光體層或透明層觀察到黑焦。 ×: Black coke was observed in the phosphor layer or the transparent layer.

[藉由聚矽氧樹脂組合物A之反應而獲得之生成物之烴基(R5)中之苯基之含有比率之測定] [Measurement of the content ratio of phenyl groups in the hydrocarbon group (R 5 ) of the product obtained by the reaction of the polyoxyxylene resin composition A]

藉由1H-NMR及29Si-NMR,算出藉由聚矽氧樹脂組合物A(即,不含填料之聚矽氧樹脂組合物A)之反應而獲得之生成物中直接鍵結於矽原子之烴基(平均組成式(3)之R5)中之苯基之含有比率(莫耳%)。 The product obtained by the reaction of the polyoxyxylene resin composition A (that is, the polyoxyxyl resin composition A containing no filler) was directly bonded to the hydrazine by 1 H-NMR and 29 Si-NMR. The content ratio of phenyl groups (% by mole) in the hydrocarbon group of the atom (R 5 of the average composition formula (3)).

具體而言,不添加填料而使A階段之聚矽氧樹脂組合物A於100℃下反應(完全硬化、C階段化)1小時,獲得生成物。 Specifically, the A-stage polyoxynoxy resin composition A was reacted (completely cured, C-staged) at 100 ° C for 1 hour without adding a filler to obtain a product.

繼而,對所獲得之生成物之1H-NMR及29Si-NMR進行測定,藉此算出直接鍵結於矽原子之烴基(R5)中之苯基所占之比率(莫耳%)。 Then, 1 H-NMR and 29 Si-NMR of the obtained product were measured to calculate the ratio (mol%) of the phenyl group directly bonded to the hydrocarbon group (R 5 ) of the ruthenium atom.

其結果為48%。 The result was 48%.

將各實施例及各比較例中之各層之構成及配方示於表1。 The composition and formulation of each layer in each of the examples and the comparative examples are shown in Table 1.

將各實施例及各比較例中之各層之尺寸及螢光體層密封之LED之評價示於表2。 Table 2 shows the evaluation of the dimensions of the respective layers in each of the examples and the comparative examples and the LEDs sealed by the phosphor layers.

再者,上述說明係作為本創作之例示之實施形態而提供,但其只不過為例示,不作限定性地解釋。由該技術領域之從業人員所明確之本創作之變化例為下述申請專利範圍所包含者。 In addition, the above description is provided as an exemplified embodiment of the present invention, but it is merely illustrative and not to be construed as limiting. Variations of the present invention as defined by those skilled in the art are encompassed by the scope of the following claims.

1‧‧‧螢光體層密封之LED 1‧‧‧Silver body sealed LED

2‧‧‧LED 2‧‧‧LED

3‧‧‧螢光體層 3‧‧‧Fluorescent layer

4‧‧‧透明層 4‧‧‧Transparent layer

21‧‧‧下表面 21‧‧‧ Lower surface

22‧‧‧上表面 22‧‧‧ upper surface

23‧‧‧側面 23‧‧‧ side

30‧‧‧收容部 30‧‧‧ Housing Department

31‧‧‧上表面 31‧‧‧ upper surface

32‧‧‧下表面 32‧‧‧ lower surface

33‧‧‧側面 33‧‧‧ side

34‧‧‧內面 34‧‧‧ inside

35‧‧‧側部 35‧‧‧ side

41‧‧‧下表面 41‧‧‧ lower surface

42‧‧‧上表面 42‧‧‧ upper surface

43‧‧‧側面 43‧‧‧ side

50‧‧‧基板 50‧‧‧Substrate

x‧‧‧距離 Distance from x‧‧‧

y‧‧‧距離 Y‧‧‧ distance

z‧‧‧距離 Z‧‧‧distance

α‧‧‧距離 ‧‧‧‧ distance

γ‧‧‧LED之左右方向長度 γ‧‧‧LED length in the left and right direction

Claims (7)

一種被覆有螢光體層之光半導體元件,其特徵在於包含:光半導體元件、被覆上述光半導體元件之螢光體層、及被覆上述螢光體層之至少一部分之透明層。 An optical semiconductor device coated with a phosphor layer, comprising: an optical semiconductor element; a phosphor layer covering the optical semiconductor element; and a transparent layer covering at least a part of the phosphor layer. 如請求項1之被覆有螢光體層之光半導體元件,其中上述光半導體元件具有:可與基板接觸之元件側接觸可能面、相對於上述元件側接觸可能面於一側隔開距離x而對向配置之元件側對向面、以及連結於上述元件側接觸可能面及上述元件側對向面之元件側連結面,上述螢光體層具有:相對於上述元件側對向面於上述一側隔開距離y而對向配置之螢光體側第1對向面、及相對於上述元件側連結面於與上述一方向正交之正交方向隔開距離α而對向配置之螢光體側第2對向面,上述透明層具有:相對於上述螢光體側第1對向面於上述一側隔開距離z而對向配置之透明側對向面、及連結於上述透明側對向面且在上述一方向上投影時相對於上述元件側連結面於上述正交方向隔開間隔地配置之透明側連結面,並且該被覆有螢光體層之光半導體元件滿足下述(1)~(4)之全部:(1)用上述距離y除以上述距離x所得之值(y/x)為1以上且5以 下,(2)上述距離y與上述距離z之和(y+z)為0.25mm以上且2mm以下,(3)上述距離α和上述螢光體側第2對向面與上述透明側連結面之距離β之和(α+β)為50μm以上且2000μm以下,其中,上述距離β為0以上,(4)用上述距離y除以上述距離α所得之值(y/α)為1以上且2.5以下。 An optical semiconductor component coated with a phosphor layer, wherein the optical semiconductor component has: an element side contact possible surface that can be in contact with the substrate, and a contact distance of one side with respect to the element side may be separated by a distance x a component side opposite surface disposed to the element side and an element side connecting surface connected to the element side contact possible surface and the element side opposing surface, wherein the phosphor layer has a surface opposite to the element side opposite side The phosphor-side first facing surface disposed opposite to the opening y and the phosphor side disposed opposite to the element-side connecting surface at a distance α from the orthogonal direction orthogonal to the one direction In the second opposing surface, the transparent layer has a transparent side opposing surface that is disposed opposite to the first side of the phosphor side on the one side by a distance z, and is connected to the transparent side The transparent side connecting surface which is disposed at intervals in the orthogonal direction with respect to the element side connecting surface when the one side is projected upward, and the optical semiconductor element covered with the phosphor layer satisfies the following (1) to (1) 4) All: (1) The value (y/x) obtained by dividing the above distance y by the above distance x is 1 or more and 5 (2) the sum (y+z) of the distance y and the distance z is 0.25 mm or more and 2 mm or less, and (3) the distance α and the second opposite surface of the phosphor side and the transparent side joint surface The sum of the distances β (α + β) is 50 μm or more and 2000 μm or less, wherein the distance β is 0 or more, and (4) the value (y/α) obtained by dividing the distance y by the distance α is 1 or more. 2.5 or less. 如請求項1之被覆有螢光體層之光半導體元件,其中上述螢光體層含有螢光體與第1透明組合物,並且上述第1透明組合物之折射率RIp為1.45以上且1.60以下。 An optical semiconductor element coated with a phosphor layer according to claim 1, wherein the phosphor layer contains a phosphor and a first transparent composition, and the refractive index RIp of the first transparent composition is 1.45 or more and 1.60 or less. 如請求項1之被覆有螢光體層之光半導體元件,其中上述螢光體層含有螢光體與第1透明組合物,上述透明層含有第2透明組合物,並且自上述第1透明組合物之折射率RIp減去上述第2透明組合物之折射率RIt所得之值(RIp-RIt)為-0.70以上且0.20以下。 An optical semiconductor element coated with a phosphor layer of claim 1, wherein the phosphor layer contains a phosphor and a first transparent composition, and the transparent layer contains a second transparent composition, and the first transparent composition The value (RIp-RIt) obtained by subtracting the refractive index RIt of the second transparent composition from the refractive index RIp is -0.70 or more and 0.20 or less. 如請求項4之被覆有螢光體層之光半導體元件,其中上述RIp-上述RIt為0.05以上。 An optical semiconductor element coated with a phosphor layer according to claim 4, wherein said RIp - said RIt is 0.05 or more. 如請求項2之被覆有螢光體層之光半導體元件,其中上述螢光體側第2對向面與上述透明側連結面於上述一方向上形成為同一面。 An optical semiconductor element coated with a phosphor layer according to claim 2, wherein the second opposite surface of the phosphor side and the transparent side connecting surface are formed in the same plane in the one direction. 如請求項2之被覆有螢光體層之光半導體元件,其中上述距離α超過50μm。 An optical semiconductor element coated with a phosphor layer as claimed in claim 2, wherein said distance α exceeds 50 μm.
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