JP2010183035A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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JP2010183035A
JP2010183035A JP2009027782A JP2009027782A JP2010183035A JP 2010183035 A JP2010183035 A JP 2010183035A JP 2009027782 A JP2009027782 A JP 2009027782A JP 2009027782 A JP2009027782 A JP 2009027782A JP 2010183035 A JP2010183035 A JP 2010183035A
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light
fluorescent layer
light emitting
emitting device
substrate
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Shigeo Takeda
重郎 武田
Hiroyuki Tajima
博幸 田嶌
Shota Shimonishi
正太 下西
Yosuke Tsuchiya
陽祐 土屋
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting device capable of reducing color variations radiated from the device in the light-emitting device whose lens part is a dome type. <P>SOLUTION: The light-emitting device 1 includes a light-emitting element 3 that is directly or indirectly mounted on a substrate 2, a fluorescent layer 4 having a side face coating portion 43 coating a side face 31 of the light-emitting element 3 and an upper face coating portion 44 which is formed thicker than the side surface coating portion 43 and coating an upper face 32 of the light-emitting element 3, and a dome-type lens portion 5 covering the light-emitting element 3 coated by the fluorescent layer 4 on the substrate 2. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、基板上に実装される発光素子と、発光素子を被覆する蛍光層と、蛍光層により被覆された発光素子を覆うドーム型のレンズ部と、を備えた発光装置に関する。   The present invention relates to a light emitting device including a light emitting element mounted on a substrate, a fluorescent layer that covers the light emitting element, and a dome-shaped lens portion that covers the light emitting element covered with the fluorescent layer.

この種の発光装置として、リード電極を有する台座の上面に発光素子が実装され、発光素子の上面及び側面を覆い蛍光物質が混合された第1の樹脂と、第1の樹脂の外周面を被覆するドーム型の第2の樹脂と、を備えたものが知られている(例えば、特許文献1参照)。この発光装置では、第2の樹脂がレンズ部をなし、第1の樹脂が蛍光層をなしている。特許文献1においては、第1の樹脂の膜厚は上面及び側面で一定となっている。   As a light emitting device of this type, a light emitting element is mounted on the upper surface of a pedestal having a lead electrode, and covers the upper surface and side surfaces of the light emitting element and the outer peripheral surface of the first resin mixed with a fluorescent material. A dome-shaped second resin is known (for example, see Patent Document 1). In this light emitting device, the second resin forms a lens portion, and the first resin forms a fluorescent layer. In Patent Document 1, the film thickness of the first resin is constant on the upper surface and side surfaces.

特開2005−268431号公報JP 2005-268431 A

しかしながら、レンズ部がドーム型である場合、蛍光層を発光素子の上面及び側面で同じ膜厚とすると、装置から放射される光の色ムラが大きくなるという問題点がある。   However, when the lens portion is a dome shape, there is a problem that uneven color of light emitted from the device increases if the fluorescent layer has the same film thickness on the upper surface and side surfaces of the light emitting element.

本発明は前記事情に鑑みてなされたものであり、その目的とするところは、レンズ部がドーム型の発光装置において、装置から放射される光の色ムラを低減することのできる発光装置を提供することにある。   The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a light-emitting device capable of reducing uneven color of light emitted from the device in a dome-type light-emitting device. There is to do.

本発明によれば、基板上に直接的又は間接的に実装される発光素子と、前記発光素子の側面を被覆する側面被覆部と、前記側面被覆部よりも厚く形成され前記発光素子の上面を被覆する上面被覆部と、を有する蛍光層と、前記基板上にて前記蛍光層により被覆された前記発光素子を覆うドーム型のレンズ部と、を備えた発光装置が提供される。   According to the present invention, the light emitting element mounted directly or indirectly on the substrate, the side surface covering portion that covers the side surface of the light emitting element, and the upper surface of the light emitting element that is formed thicker than the side surface covering portion. There is provided a light emitting device comprising: a fluorescent layer having an upper surface covering portion to cover; and a dome-shaped lens portion that covers the light emitting element covered with the fluorescent layer on the substrate.

上記発光装置において、前記蛍光層は、蛍光体粒子と、前記蛍光体粒子が分散された透明材料と、を含み、前記レンズ部の屈折率は、前記蛍光層の前記透明材料の屈折率と同じ若しくは大きいことが好ましい。   In the light emitting device, the phosphor layer includes phosphor particles and a transparent material in which the phosphor particles are dispersed, and the refractive index of the lens unit is the same as the refractive index of the transparent material of the phosphor layer. Or it is preferable that it is large.

上記発光装置において、前記レンズ部は、前記蛍光層の透明材料と同じ材料により形成されることが好ましい。   In the above light emitting device, it is preferable that the lens portion is formed of the same material as the transparent material of the fluorescent layer.

本発明によれば、レンズ部がドーム型の発光装置において、装置から放射される光の色ムラを低減することができる。   ADVANTAGE OF THE INVENTION According to this invention, in the dome-type light-emitting device with a lens part, the color nonuniformity of the light radiated | emitted from an apparatus can be reduced.

図1は、本発明の一実施形態を示す発光装置の断面説明図である。FIG. 1 is a cross-sectional explanatory view of a light emitting device showing an embodiment of the present invention. 図2は、比較例1を示す発光装置の断面説明図である。FIG. 2 is a cross-sectional explanatory view of a light emitting device showing Comparative Example 1. 図3は、実施例と比較例1の装置外部へ放射される光について、光軸(LED素子の上面中央に垂直な軸)に対する角度と、色度との関係を示すグラフである。FIG. 3 is a graph showing the relationship between the angle with respect to the optical axis (axis perpendicular to the center of the upper surface of the LED element) and chromaticity of the light emitted outside the apparatus of Example and Comparative Example 1. 図4は、比較例2を示す発光装置の断面説明図である。FIG. 4 is a cross-sectional explanatory view of a light emitting device showing a comparative example 2. 図5は、比較例1と比較例2の装置外部へ放射される光について、光軸に対する角度と、相対色度との関係を示すグラフである。FIG. 5 is a graph showing the relationship between the angle with respect to the optical axis and the relative chromaticity of the light emitted to the outside of the devices of Comparative Example 1 and Comparative Example 2.

図1は本発明の一実施形態を示し、図1は発光装置の外観斜視図である。
図1に示すように、発光装置1は、基板2上に直接的に実装されるLED素子3と、LED素子3を全体的に被覆する蛍光層4と、基板2上にて蛍光層4により被覆されたLED素子3を覆うレンズ部5と、を備えている。本実施形態においては、LED素子3から青色光が放射され、当該青色光の一部が蛍光層4にて黄色光に変換されることにより、レンズ部5から装置外部へ白色光が放射される。
FIG. 1 shows an embodiment of the present invention, and FIG. 1 is an external perspective view of a light emitting device.
As shown in FIG. 1, the light emitting device 1 includes an LED element 3 that is directly mounted on a substrate 2, a fluorescent layer 4 that entirely covers the LED element 3, and a fluorescent layer 4 on the substrate 2. And a lens portion 5 that covers the covered LED element 3. In the present embodiment, blue light is emitted from the LED element 3, and part of the blue light is converted into yellow light by the fluorescent layer 4, whereby white light is emitted from the lens unit 5 to the outside of the apparatus. .

基板2は、平板状に形成され、例えばCuW、アルミナ等のセラミックからなる。基板2の上面には、LED素子3と電気的に接続される図示しない回路パターンが形成されている。尚、基板2は、セラミックに限定されず、例えばガラスエポキシのような樹脂材料により形成してもよい。   The board | substrate 2 is formed in flat form, for example, consists of ceramics, such as CuW and an alumina. On the upper surface of the substrate 2, a circuit pattern (not shown) that is electrically connected to the LED element 3 is formed. In addition, the board | substrate 2 is not limited to a ceramic, For example, you may form with resin materials like glass epoxy.

LED素子3は、フリップチップ型であり、図示しないバンプによりセラミック基板2の回路パターンと接続されている。LED素子3は、例えば、サファイア基板上にInAlGa1−x−yN(0≦x≦1,0≦y≦1,0≦x+y≦1)の式で表されるGaN系半導体が形成されている。 The LED element 3 is a flip chip type, and is connected to the circuit pattern of the ceramic substrate 2 by a bump (not shown). The LED element 3 is, for example, a GaN-based semiconductor represented by a formula of In x Al y Ga 1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1) on a sapphire substrate. Is formed.

蛍光層4は、LED素子3から放射される光を励起光とし、当該励起光よりも長波長の波長変換光を発する蛍光体粒子41を含有する。蛍光体粒子41としては、例えば、YAG(yttrium aluminum garnet)系蛍光体のようなアルミン酸塩蛍光体、例えばBOS(barium ortho-silicate)系蛍光体のようなケイ酸塩蛍光体等を用いることができる。また、蛍光層4は、蛍光体粒子41が分散される透明材料42を含んでいる。透明材料42としては、例えばエポキシ樹脂、シリコーン樹脂等を用いることができる。   The fluorescent layer 4 contains phosphor particles 41 that emit light emitted from the LED element 3 as excitation light and emit wavelength-converted light having a longer wavelength than the excitation light. As the phosphor particles 41, for example, an aluminate phosphor such as a YAG (yttrium aluminum garnet) phosphor, for example, a silicate phosphor such as a BOS (barium ortho-silicate) phosphor is used. Can do. The fluorescent layer 4 includes a transparent material 42 in which the phosphor particles 41 are dispersed. As the transparent material 42, for example, an epoxy resin, a silicone resin, or the like can be used.

また、蛍光層4は、LED素子3の側面31を被覆する側面被覆部43と、側面被覆部43よりも厚く形成されLED素子3の上面32を被覆する上面被覆部44と、を有している。側面被覆部43及び上面被覆部44は、LED素子3の表面にてほぼ一定の厚さで形成されている。尚、側面被覆部43は、厳密には、上方から下方へ向かって僅かに窄んで形成されている。   The fluorescent layer 4 includes a side surface covering portion 43 that covers the side surface 31 of the LED element 3 and an upper surface covering portion 44 that is formed thicker than the side surface covering portion 43 and covers the upper surface 32 of the LED element 3. Yes. The side surface covering portion 43 and the upper surface covering portion 44 are formed with a substantially constant thickness on the surface of the LED element 3. Strictly speaking, the side surface covering portion 43 is slightly narrowed from the upper side to the lower side.

レンズ部5は、ドーム型であり、本実施形態においては半球状に形成されている。レンズ部5は、蛍光層4の透明材料42の屈折率と同じ若しくは高い屈折率の透明材料からなる。レンズ部5は、樹脂、ガラス等からなり、蛍光層4の透明材料42と同じ材質であることが好ましい。蛍光層4と同じ材質とすることにより、蛍光層4とレンズ部5とを確実に密着させることができるからである。   The lens unit 5 has a dome shape, and is formed in a hemispherical shape in the present embodiment. The lens unit 5 is made of a transparent material having the same or higher refractive index than that of the transparent material 42 of the fluorescent layer 4. The lens unit 5 is preferably made of resin, glass, or the like, and is made of the same material as the transparent material 42 of the fluorescent layer 4. This is because by using the same material as the fluorescent layer 4, the fluorescent layer 4 and the lens unit 5 can be securely adhered.

以上のように構成された発光装置1によれば、LED素子3から発せられた青色光は、一部が蛍光層4により黄色に波長変換される。蛍光層4からレンズ部5へ進入した光は、レンズ部5の表面にて屈折して装置外部へ放射される。レンズ部5から外部へ放射される光は、青色成分と黄色成分を含む白色光となる。   According to the light emitting device 1 configured as described above, part of the blue light emitted from the LED element 3 is converted into yellow by the fluorescent layer 4. The light that has entered the lens unit 5 from the fluorescent layer 4 is refracted on the surface of the lens unit 5 and is emitted outside the apparatus. The light emitted from the lens unit 5 to the outside is white light including a blue component and a yellow component.

ここで、蛍光層4の透明部材42とレンズ部5を同じ材料で形成したので、透明部材42とレンズ部5が同じ屈折率であり、蛍光層4とレンズ部5の界面で全反射が生じることはなく、蛍光層4内に光が閉じ込められることはない。このように、蛍光層4の屈折率と同じ屈折率のレンズ部5を設けたことにより、LED素子3から発せられる光の取り出し効率が高くなる。尚、レンズ部5の屈折率が蛍光層4より高くても、LED素子3から放射される光については、蛍光層4とレンズ部5の界面で全反射することはない。   Here, since the transparent member 42 and the lens portion 5 of the fluorescent layer 4 are formed of the same material, the transparent member 42 and the lens portion 5 have the same refractive index, and total reflection occurs at the interface between the fluorescent layer 4 and the lens portion 5. In other words, no light is confined in the fluorescent layer 4. Thus, by providing the lens portion 5 having the same refractive index as that of the fluorescent layer 4, the extraction efficiency of the light emitted from the LED element 3 is increased. Even if the refractive index of the lens unit 5 is higher than that of the fluorescent layer 4, the light emitted from the LED element 3 is not totally reflected at the interface between the fluorescent layer 4 and the lens unit 5.

また、本実施形態の発光装置1によれば、蛍光層4の上面被覆部44を側面被覆部43よりも厚くしたので、レンズ部5から取り出される光の色ムラを低減することができる。具体的には、光軸(LED素子3の上面中央に垂直な軸)付近において、色度の変化を殆どなくすことにより色ムラの低減が図られる。   Further, according to the light emitting device 1 of the present embodiment, since the upper surface covering portion 44 of the fluorescent layer 4 is made thicker than the side surface covering portion 43, the color unevenness of the light extracted from the lens portion 5 can be reduced. Specifically, color unevenness can be reduced by eliminating almost any change in chromaticity near the optical axis (axis perpendicular to the center of the upper surface of the LED element 3).

また、本実施形態の発光装置1によれば、蛍光層4の透明部材42とレンズ部5を同じ材料で形成したので、蛍光層4とレンズ部5の密着性が高い。これにより、製造時に蛍光層4とレンズ部5の間に空気が残留して空気層が形成されてしまうことはなく、蛍光層4とレンズ部5の界面における光学的なロスを最小限とすることができる。   Further, according to the light emitting device 1 of the present embodiment, since the transparent member 42 of the fluorescent layer 4 and the lens unit 5 are formed of the same material, the adhesion between the fluorescent layer 4 and the lens unit 5 is high. As a result, air does not remain between the fluorescent layer 4 and the lens unit 5 at the time of manufacturing and no air layer is formed, and optical loss at the interface between the fluorescent layer 4 and the lens unit 5 is minimized. be able to.

尚、前記実施形態においては、青色光を発するLED素子3と、青色光により励起されると黄色光を発する蛍光層4の組合せを例示したが、LED素子3と蛍光層4の発光色は青色と黄色の組合せに限定されるものではない。例えば、蛍光層4が黄色と赤色で発光するものであったり、LED素子3が緑色で発光するものであってもよいことは勿論である。   In the embodiment, the combination of the LED element 3 that emits blue light and the fluorescent layer 4 that emits yellow light when excited by the blue light is exemplified. However, the emission color of the LED element 3 and the fluorescent layer 4 is blue. It is not limited to the combination of yellow and yellow. For example, the fluorescent layer 4 may emit yellow and red light, or the LED element 3 may emit green light.

また、前記実施形態においては、蛍光層4として蛍光体粒子41が透明材料42に含有されるものを示したが、例えば、蛍光層4を発光中心として希土類元素のイオンを含むガラスとすることも可能である。この場合、レンズ部5も蛍光層4の母材と同じガラスとすることが好ましい。   Moreover, in the said embodiment, although the thing which contains the fluorescent substance particle 41 in the transparent material 42 as the fluorescent layer 4 was shown, it is also possible to use, for example, a glass containing rare earth element ions with the fluorescent layer 4 as the emission center. Is possible. In this case, the lens portion 5 is also preferably made of the same glass as the base material of the fluorescent layer 4.

また、前記実施形態においては、LED素子3が基板2に直接的に実装されるものを示したが、例えばサブマウント等を介在することで間接的に実装されるものであってもよい。さらに、LED素子3の半導体材料は任意であり、例えば、AlGaAs系材料、GaAsP系材料等のような他の半導体材料を用いてもよい。さらにまた、LED素子3は、フリップチップ型でなく、フェイスアップ型であってもよい。また、発光素子として、LED素子3以外の素子を用いてもよい。   In the above embodiment, the LED element 3 is directly mounted on the substrate 2. However, the LED element 3 may be mounted indirectly by interposing a submount, for example. Furthermore, the semiconductor material of the LED element 3 is arbitrary, and other semiconductor materials such as an AlGaAs-based material, a GaAsP-based material, and the like may be used. Furthermore, the LED element 3 may be a face-up type instead of a flip-chip type. Moreover, you may use elements other than the LED element 3 as a light emitting element.

また、前記実施形態においては、レンズ部5が半球状のドーム型であるものを示したが、レンズ部5は例えば断面楕円形状のように、他の形状のドーム型であってもよい。また、レンズ部5とLED素子3の相対的な大きさは任意に変更することができる。   Moreover, in the said embodiment, although the lens part 5 showed what is a hemispherical dome shape, the lens part 5 may be a dome shape of another shape like a cross-sectional ellipse shape, for example. Further, the relative sizes of the lens unit 5 and the LED element 3 can be arbitrarily changed.

以下、実施例及び比較例1について説明する。
[実施例]
配光特性のデータを取得するにあたり、1.0mm角のLED素子3を用いて発光素子1を作製した。基板2としてはCuWが内部に埋め込まれたアルミナを用い、基板2の回路パターンをAuSnにより形成した。また、LED素子3は、厚さ0.375mmのサファイア基板にn型層、発光層、p型層の層構成のGaN系半導体層をこの順で形成し、p型層及び発光層の一部を除去してn型層の一部を露出させて作製した。露出させたn型層のn電極としてV/Alを用い、p型層のp電極としてRhを用いた。蛍光層4は、YAGからなる蛍光体粒子41をシリコーン樹脂からなる透明樹脂42に分散させて作製した。蛍光層4の厚さは、側面被覆部43を250μmとし、上面被覆部44を475μmとした。レンズ部5は、シリコーン樹脂として、基板2上にて半径1.25mmの半球状とした。
Examples and Comparative Example 1 will be described below.
[Example]
In obtaining the light distribution characteristic data, the light emitting device 1 was manufactured using the 1.0 mm square LED device 3. As the substrate 2, alumina with CuW embedded therein was used, and the circuit pattern of the substrate 2 was formed of AuSn. In addition, the LED element 3 is formed by forming a GaN-based semiconductor layer having a layer configuration of an n-type layer, a light-emitting layer, and a p-type layer in this order on a sapphire substrate having a thickness of 0.375 mm, and a part of the p-type layer and the light-emitting layer. Was removed to expose a part of the n-type layer. V / Al was used as the n electrode of the exposed n type layer, and Rh was used as the p electrode of the p type layer. The fluorescent layer 4 was prepared by dispersing phosphor particles 41 made of YAG in a transparent resin 42 made of silicone resin. The thickness of the fluorescent layer 4 was 250 μm for the side surface covering portion 43 and 475 μm for the upper surface covering portion 44. The lens unit 5 is a hemisphere having a radius of 1.25 mm on the substrate 2 as a silicone resin.

[比較例1]
図2は、比較例1を示す発光装置の断面説明図である。
図2に示すように、比較例1として、蛍光層104の上面被覆部144と側面被覆部143の厚さが同じ発光装置101を作製した。具体的には、蛍光層104の上面被覆部144の厚さを250μmとし、その他の構成を実施例の発光装置1と同様とした。
[Comparative Example 1]
FIG. 2 is a cross-sectional explanatory view of a light emitting device showing Comparative Example 1.
As shown in FIG. 2, as Comparative Example 1, a light emitting device 101 having the same thickness of the upper surface covering portion 144 and the side surface covering portion 143 of the fluorescent layer 104 was produced. Specifically, the thickness of the upper surface covering portion 144 of the fluorescent layer 104 was set to 250 μm, and other configurations were the same as those of the light emitting device 1 of the example.

図3は、実施例と比較例1の装置外部へ放射される光について、光軸(LED素子の上面中央に垂直な軸)に対する角度と、色度との関係を示すグラフである。
図3に示すように、比較例1においては、光軸に対する角度が±90°で最大の色度を示し、0°で最小の色度を示した。これに対し、実施例においては、光軸に対する角度が、−60°から+60の範囲で色度がほぼ同じとなり、この範囲で色度の差は殆ど認められなかった。具体的に、比較例において最大の色度と最小の色度の差が約0.6だったところ、実施例において最大の色度と最小の色度の差を約0.3とすることができ色度差を半減することができた。尚、−60°から+60の範囲に限って言えば、比較例の色度差が約0.3であるところ、実施例の色度差は0.1未満である。
FIG. 3 is a graph showing the relationship between the angle with respect to the optical axis (axis perpendicular to the center of the upper surface of the LED element) and chromaticity of the light emitted outside the apparatus of Example and Comparative Example 1.
As shown in FIG. 3, in Comparative Example 1, the maximum chromaticity was shown when the angle with respect to the optical axis was ± 90 °, and the minimum chromaticity was shown at 0 °. On the other hand, in the examples, the chromaticity is almost the same when the angle with respect to the optical axis is in the range of −60 ° to +60, and almost no difference in chromaticity is recognized in this range. Specifically, when the difference between the maximum chromaticity and the minimum chromaticity is about 0.6 in the comparative example, the difference between the maximum chromaticity and the minimum chromaticity may be about 0.3 in the embodiment. The chromaticity difference could be halved. Speaking only in the range of −60 ° to +60, the chromaticity difference of the example is less than 0.1 while the chromaticity difference of the comparative example is about 0.3.

[比較例2]
図4は、比較例2を示す発光装置の断面説明図である。
図4に示すように、比較例2として、比較例1に対してレンズ部5を省略した発光装置201を作製した。
[Comparative Example 2]
FIG. 4 is a cross-sectional explanatory view of a light emitting device showing a comparative example 2.
As shown in FIG. 4, as Comparative Example 2, a light-emitting device 201 in which the lens unit 5 was omitted from Comparative Example 1 was produced.

図5は、比較例1と比較例2の装置外部へ放射される光について、光軸に対する角度と、相対色度との関係を示すグラフである。
図5に示すように、比較例1においては、光軸に対する角度が±90°で最大の色度を示し、0°で最小の色度を示した。比較例1に対してレンズ部5を省略した比較例2では、光軸に対する角度が±90°で最大の色度を示し、±50°で最小の色度を示している。比較例1及び比較例2のデータから、レンズ部5を設けると色度差が大きくなることがわかる。
FIG. 5 is a graph showing the relationship between the angle with respect to the optical axis and the relative chromaticity of the light emitted to the outside of the devices of Comparative Example 1 and Comparative Example 2.
As shown in FIG. 5, in Comparative Example 1, the maximum chromaticity was shown when the angle with respect to the optical axis was ± 90 °, and the minimum chromaticity was shown at 0 °. In Comparative Example 2, in which the lens unit 5 is omitted from Comparative Example 1, the maximum chromaticity is shown when the angle with respect to the optical axis is ± 90 °, and the minimum chromaticity is shown when ± 50 °. From the data of Comparative Examples 1 and 2, it can be seen that the chromaticity difference increases when the lens unit 5 is provided.

1 発光装置
2 基板
3 LED素子
4 蛍光層
5 レンズ部
31 側面
32 上面
41 蛍光体粒子
42 透明材料
43 側面被覆部
44 上面被覆部
101 発光装置
104 蛍光層
143 側面被覆部
144 上面被覆部
201 発光装置
DESCRIPTION OF SYMBOLS 1 Light emitting device 2 Board | substrate 3 LED element 4 Fluorescent layer 5 Lens part 31 Side surface 32 Upper surface 41 Phosphor particle 42 Transparent material 43 Side surface covering part 44 Upper surface coating part 101 Light emitting device 104 Fluorescent layer 143 Side surface coating part 144 Upper surface coating part 201 Light emitting device

Claims (3)

基板上に直接的又は間接的に実装される発光素子と、
前記発光素子の側面を被覆する側面被覆部と、前記側面被覆部よりも厚く形成され前記発光素子の上面を被覆する上面被覆部と、を有する蛍光層と、
前記基板上にて前記蛍光層により被覆された前記発光素子を覆うドーム型のレンズ部と、を備えた発光装置。
A light emitting device mounted directly or indirectly on a substrate;
A fluorescent layer having a side surface covering portion that covers the side surface of the light emitting element, and an upper surface covering portion that is formed thicker than the side surface covering portion and covers the upper surface of the light emitting element;
A dome-shaped lens portion covering the light emitting element covered with the fluorescent layer on the substrate.
前記蛍光層は、蛍光体粒子と、前記蛍光体粒子が分散された透明材料と、を含み、
前記レンズ部の屈折率は、前記蛍光層の前記透明材料の屈折率と同じ若しくは大きい請求項1に記載の発光装置。
The phosphor layer includes phosphor particles and a transparent material in which the phosphor particles are dispersed,
The light emitting device according to claim 1, wherein a refractive index of the lens unit is the same as or larger than a refractive index of the transparent material of the fluorescent layer.
前記レンズ部は、前記蛍光層の透明材料と同じ材料により形成される請求項2に記載の発光装置。   The light emitting device according to claim 2, wherein the lens unit is formed of the same material as the transparent material of the fluorescent layer.
JP2009027782A 2009-02-09 2009-02-09 Light-emitting device Pending JP2010183035A (en)

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Cited By (6)

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US8558456B2 (en) 2011-04-27 2013-10-15 Panasonic Corporation Light emitting device and illumination apparatus including same
JP2016119454A (en) * 2014-12-17 2016-06-30 日東電工株式会社 Fluorescent material layer coated optical semiconductor element and manufacturing method of the same
JP2017055093A (en) * 2015-09-11 2017-03-16 株式会社東芝 Semiconductor light emitting device
CN112133810A (en) * 2020-10-29 2020-12-25 深圳市广社照明科技有限公司 Long-range phosphor powder large-angle scattering patch LED
JP2021119591A (en) * 2020-01-30 2021-08-12 日亜化学工業株式会社 Light-emitting device
CN113587036A (en) * 2021-08-12 2021-11-02 苏州乔远激光科技有限公司 Transparent piezoelectricity polychrome LD atmosphere lamp module

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JP2005183777A (en) * 2003-12-22 2005-07-07 Nichia Chem Ind Ltd Semiconductor device and its manufacturing method
JP2007158009A (en) * 2005-12-05 2007-06-21 Nichia Chem Ind Ltd Light-emitting device

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Publication number Priority date Publication date Assignee Title
JP2005183777A (en) * 2003-12-22 2005-07-07 Nichia Chem Ind Ltd Semiconductor device and its manufacturing method
JP2007158009A (en) * 2005-12-05 2007-06-21 Nichia Chem Ind Ltd Light-emitting device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8558456B2 (en) 2011-04-27 2013-10-15 Panasonic Corporation Light emitting device and illumination apparatus including same
JP2016119454A (en) * 2014-12-17 2016-06-30 日東電工株式会社 Fluorescent material layer coated optical semiconductor element and manufacturing method of the same
JP2017055093A (en) * 2015-09-11 2017-03-16 株式会社東芝 Semiconductor light emitting device
JP2021119591A (en) * 2020-01-30 2021-08-12 日亜化学工業株式会社 Light-emitting device
JP7417067B2 (en) 2020-01-30 2024-01-18 日亜化学工業株式会社 light emitting device
CN112133810A (en) * 2020-10-29 2020-12-25 深圳市广社照明科技有限公司 Long-range phosphor powder large-angle scattering patch LED
CN112133810B (en) * 2020-10-29 2022-06-07 深圳市广社照明科技有限公司 Long-range phosphor powder large-angle scattering patch LED
CN113587036A (en) * 2021-08-12 2021-11-02 苏州乔远激光科技有限公司 Transparent piezoelectricity polychrome LD atmosphere lamp module

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