WO2016039442A1

WO2016039442A1 - Sealing-layer-covered photosemiconductor element production method and photosemiconductor device production method

Info

Publication number: WO2016039442A1
Application number: PCT/JP2015/075837
Authority: WO
Inventors: 亮太三田; 広和松田
Original assignee: 日東電工株式会社
Priority date: 2014-09-12
Filing date: 2015-09-11
Publication date: 2016-03-17
Also published as: TW201622184A; JP2016062908A

Abstract

This sealing-layer-covered photosemiconductor element production method is a method for producing a sealing-layer-covered photosemiconductor element comprising a photosemiconductor element and a sealing layer covering the photosemiconductor element. This sealing-layer-covered photosemiconductor element production method comprises: the step of preparing a press equipped with a first mold shaped as a flat plate, and a second mold shaped as a flat plate, which is to be disposed opposite to the first mold; the step of disposing in the press a control member for controlling the movement of the first mold and/or the second mold in the pressing direction of the press beyond the pressing position corresponding to the designed thickness of the sealing layer; the step of disposing between the first mold and the second mold a sealing member comprising a release layer and a sealing layer in the B stage disposed on the release layer surface, in such a manner that the sealing layer faces the second mold; the step of disposing a barrier member corresponding to the external shape of the sealing layer, in such a manner as to surround the sealing layer when projected in the pressing direction; the step of disposing, between the first mold and the second mold, on the second mold side with respect to the sealing member, an element member comprising a substrate and a photosemiconductor element disposed on the substrate surface, in such a manner that the photosemiconductor element faces the first mold; and the step of bringing the first mold and the second mold close to one another to position the first mold and/or the second mold at the pressing position and cover the photosemiconductor element with the sealing layer.

Description

Method for manufacturing sealing layer-coated optical semiconductor element and method for manufacturing optical semiconductor device

The present invention relates to a method for manufacturing a sealing layer-covered optical semiconductor element and a method for manufacturing an optical semiconductor device, and more particularly to a method for manufacturing a sealing layer-covered optical semiconductor element, and a method for manufacturing an optical semiconductor device using the same.

Conventionally, an optical semiconductor device including an optical semiconductor element and a sealing layer sealed by the optical semiconductor element is known.

As a method for manufacturing such an optical semiconductor device, for example, a lower mold, an upper mold, a clamper that is positioned around the upper mold, with a lower end surface positioned below the lower surface of the upper mold, and a clamper and a lower mold A method using a compression molding machine provided with an upper clamp stopper and a lower clamp stopper arranged on each side has been proposed (see, for example, Patent Document 1).

That is, in the method described in Patent Document 1, an unsealed optical semiconductor device including an optical semiconductor element and a circuit board on which the optical semiconductor element is mounted is placed on the lower mold, and then the upper mold and the optical semiconductor device are mounted. After the sealing resin is applied between them, the upper mold and the clamper are lowered, and the sealing resin and the optical semiconductor device are sandwiched (clamped) to be surrounded by the inner surface of the clamper and the lower surface of the upper mold There has been proposed a method of compression molding a sealing resin in a sealed region.

Further, in the method using the compression molding machine described in Patent Document 1, when the upper clamp stopper and the lower clamp stopper are in the mold clamping position where they are in contact with each other, the sealing region has a predetermined thickness. The sealing layer formed from has a thickness corresponding to the sealing region.

JP 2006-93354 A

However, in the method described in Patent Document 1, the compression molding machine includes a clamper, an upper clamp stopper, and a lower clamp stopper.

Further, the sealing layer in the sealing region is required to have an accurate dimension capable of setting the thickness to a desired thickness. However, the method described in Patent Document 1 has a problem in that the above-described requirement cannot be satisfied. .

An object of the present invention is to provide a method for manufacturing a sealing layer-covered optical semiconductor element including a sealing layer having excellent dimensional accuracy even with a small press.

[1] The present invention is a method for producing a sealing layer-covered optical semiconductor element comprising an optical semiconductor element and a sealing layer that covers the optical semiconductor element, the first mold having a flat plate shape, A step of preparing a press provided with a flat plate-like second die to be disposed opposite to one die, and the first die in the press direction of the press exceeding a press position corresponding to a design thickness of the sealing layer. And / or a step of disposing a restricting member for restricting movement of the second mold in the press, a release layer, and a sealing provided with the sealing layer of the B stage disposed on the surface of the release layer A step of disposing a member between the first mold and the second mold such that the sealing layer faces the second mold, and a dam member corresponding to the outer shape of the sealing layer, Arrange so as to surround the sealing layer when projected in the pressing direction An element member comprising a base material and the optical semiconductor element disposed on the surface of the base material is between the first mold and the second mold, and the first member with respect to the sealing member A step of disposing the optical semiconductor element toward the first mold on the side of the two molds, and bringing the first mold and the second mold close to each other so that the first mold and / Or it is the manufacturing method of the sealing layer coating | cover optical semiconductor element characterized by including the process of positioning the said 2nd metal mold | die in the said press position, and coat | covering the said optical semiconductor element with the said sealing layer.

According to this method, since a press having a flat plate-shaped first mold and a flat plate-shaped second mold is prepared, the optical semiconductor element can be sealed with a sealing layer while the configuration of the press can be simplified. Can be coated.

Further, according to this method, the weir member is disposed so as to surround the sealing layer when projected in the press direction, and the first mold and the second mold are brought close to each other. Therefore, in the pressing of the first mold and the second mold, it is possible to suppress the sealing layer from leaking in the direction orthogonal to the pressing direction.

Further, according to this method, since the regulating member is disposed in the press, when the first mold and / or the second mold is positioned at the press position, the press position corresponding to the design thickness of the sealing layer is exceeded. The movement of the first mold and / or the second mold in the pressing direction of the press can be restricted. Therefore, the thickness of the sealing layer can be accurately adjusted to the design thickness.

[2] In the present invention, when the volume ratio of the sealing layer is such that the first mold and / or the second mold is located at the press position, the weir member, the release layer, and the base material 100% or more and 120% or less with respect to the sealing layer accommodation volume obtained by subtracting the volume of the optical semiconductor element from the volume of the space partitioned by the sealing according to [1] It is a manufacturing method of a layer covering optical semiconductor element.

According to this method, since the volume ratio of the sealing layer is in a specific range, it is possible to obtain a sealing layer having excellent dimensional accuracy.

[3] The present invention is characterized in that, in the step of disposing the dam member, the thickness of the dam member exceeds 100% and is 120% or less with respect to the design thickness of the sealing layer. The method for producing an encapsulating layer-covered optical semiconductor element according to the above [1] or [2].

According to this method, since the thickness of the dam member is in a specific range, it is possible to prevent the sealing layer from leaking in the orthogonal direction while reliably compressing the dam member in the vertical direction.

[4] The present invention according to any one of [1] to [3], wherein the weir member has a tensile elastic modulus at 23 ° C. of 0.3 MPa or more and 1000 MPa or less. It is a manufacturing method of a sealing layer covering optical semiconductor element.

According to this method, the handling property of the dam member can be secured satisfactorily, while the sealing layer can be prevented from leaking in the orthogonal direction while pressing the dam member together with the sealing layer.

[5] The present invention is the method for manufacturing an encapsulating layer-covered optical semiconductor element according to any one of [1] to [4], wherein the weir member contains a resin. .

According to this method, since the dam member contains a resin, a flexible dam member can be easily formed. Therefore, such a dam member can surely suppress the sealing layer from leaking from the dam member.

[6] The present invention is the method for producing an encapsulating layer coated optical semiconductor element according to the above [5], wherein the resin is a silicone resin and / or a urethane resin.

According to this method, since the resin is a silicone resin and / or a urethane resin, it is possible to more reliably suppress the sealing layer from leaking from the weir member.

[7] In the sealing member according to the present invention, a peripheral end portion of the peeling layer is exposed from the sealing layer, and in the step of disposing the dam member, the dam member is disposed on the peeling layer. The method for producing an encapsulating layer coated optical semiconductor element according to any one of [1] to [6], wherein the encapsulating layer coated optical semiconductor element is mounted on the peripheral end portion.

According to this method, in the step of disposing the dam member, the dam member is placed on the peripheral end portion of the release layer, so that the first mold and the second mold are brought close to each other to seal the optical semiconductor element. In the step of covering with a layer, the weir member can be easily and reliably disposed on the surface of the release layer so as to surround the sealing layer.

[8] The present invention is characterized in that, in the step of arranging the dam member, an area of the sealing layer is smaller than a cross-sectional area along a direction perpendicular to the press direction of a space surrounded by the dam member. The method for producing a sealing layer-coated optical semiconductor element according to any one of [1] to [7] above.

According to this method, the dam member surrounding the space having a larger cross-sectional area than the area of the sealing layer can be easily and reliably arranged so as to surround the sealing layer.

[9] In the present invention, when the single optical semiconductor element is arranged on the substrate, the area of the sealing layer is the area of the region where the single optical semiconductor element is arranged on the substrate. When the plurality of optical semiconductor elements are provided on the base material, the optical semiconductor element is arranged such that the area of the sealing layer is disposed on the outermost side of the plurality of optical semiconductor elements in the base material. The manufacturing method of an encapsulating layer-covered optical semiconductor element according to any one of [1] to [8], wherein the area is larger than an area surrounded by a line segment connecting the outer edges of Is the method.

According to this method, it is possible to improve the thickness accuracy of the sealing layer while reliably covering the optical semiconductor element with the sealing layer having an area larger than the area of the region described above.

[10] In the present invention, the press includes a heat source, the sealing layer of the B stage has both thermoplasticity and thermosetting property, and the optical semiconductor element is covered with the sealing layer. The sealing layer according to any one of the above [1] to [9], wherein the sealing layer is plasticized by heating, and then the plasticized sealing layer is thermally cured. It is a manufacturing method of a covering optical semiconductor element.

According to this method, since the sealing layer of the B stage has both thermoplasticity and thermosetting property, in the step of covering the optical semiconductor element with the sealing layer, the sealing layer is heated to be plasticized and sealed. While reliably covering the optical semiconductor element with the stop layer, the plasticized sealing layer can be thermally cured to improve the reliability of the optical semiconductor element.

[11] In the present invention, the sealing layer contains an alkenyl group-containing polysiloxane containing two or more alkenyl groups and / or cycloalkenyl groups in the molecule, and two or more hydrosilyl groups in the molecule. Formed into a sheet form from a sealing composition containing a phenyl silicone resin composition containing a hydrosilyl group-containing polysiloxane and a hydrosilylation catalyst,
The alkenyl group-containing polysiloxane is represented by the following average composition formula (1):
Average composition formula (1):
R ¹ _a R ² _b SiO _{(4-ab) / 2}
(In the formula, R ¹ represents an alkenyl group having 2 to 10 carbon atoms and / or a cycloalkenyl group having 3 to 10 carbon atoms. R ² represents an unsubstituted or substituted monovalent carbon atom having 1 to 10 carbon atoms. A hydrogen group (excluding an alkenyl group and a cycloalkenyl group); a is from 0.05 to 0.50, and b is from 0.80 to 1.80.
The hydrosilyl group-containing polysiloxane is represented by the following average composition formula (2):
Average composition formula (2):
H _c R ³ _d SiO _{(4-cd) / 2}
(Wherein R ³ represents an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms (excluding an alkenyl group and / or a cycloalkenyl group), and c is 0.30 or more) 1.0, and d is 0.90 or more and 2.0 or less.)
In the average composition formula (1) and the average composition formula (2), at least one of R ² and R ³ includes a phenyl group,
The product obtained by reacting the phenyl silicone resin composition is represented by the following average composition formula (3):
Average composition formula (3):
R ⁵ _e SiO _{(4-e) / 2}
(In the formula, R ⁵ represents an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms (excluding an alkenyl group and a cycloalkenyl group) including a phenyl group. .5 or more and 2.0 or less.)
The content ratio of the phenyl group in R ⁵ of the average composition formula (3) is 30 mol% or more and 55 mol% or less, according to any one of the above [1] to [10], It is a manufacturing method of this sealing layer covering optical semiconductor element.

According to this method, since the content ratio of the phenyl group in R ⁵ in the average composition formula (3) of the product obtained by reacting the silicone resin composition in the sealing layer is in a specific range, the optical semiconductor The element can be securely embedded and covered.

[12] The present invention is the method for producing an encapsulating layer coated optical semiconductor element according to the above [1] to [11], wherein the encapsulating layer contains a phosphor.

According to this method, the light emitted from the optical semiconductor element has excellent dimensional accuracy, and can be wavelength-converted by the sealing layer containing the phosphor, so that the sealing layer-coated light with excellent color uniformity A semiconductor element can be obtained.

[13] The present invention provides a sealing layer-covered optical semiconductor device disposed on the surface of a substrate by the method for manufacturing a sealing layer-covered optical semiconductor device according to any one of [1] to [12]. The substrate is a second release layer, and after the step of preparing the sealing layer-covered optical semiconductor element, the sealing layer-covered optical semiconductor element is peeled from the second release layer. And a step of mounting the optical semiconductor element of the peeled sealing layer-covered optical semiconductor element on a substrate.

According to this method, since an encapsulating layer-covered optical semiconductor element having an encapsulating layer having a thickness accurately adjusted to the design thickness is prepared, an optical semiconductor device having excellent light emission characteristics and durability can be obtained.

[14] The present invention provides an encapsulating layer-covered optical semiconductor element disposed on the surface of a substrate by the method for producing an encapsulating layer-coated optical semiconductor element according to any one of [1] to [12]. And the base material is a substrate on which the optical semiconductor element is mounted.

According to the method for producing a sealing layer-covered optical semiconductor element of the present invention, the optical semiconductor element can be covered with the sealing layer while the configuration of the press can be simplified. Moreover, it can suppress that a sealing layer leaks in the orthogonal direction with respect to a press direction. Furthermore, the thickness of the sealing layer can be accurately adjusted to the design thickness.

According to the method for manufacturing an optical semiconductor device of the present invention, an optical semiconductor device having excellent light emission characteristics and durability can be obtained.

1A to 1C are process diagrams illustrating a method for manufacturing an optical semiconductor device according to the present invention. FIG. 1A illustrates a preparation process, a spacer arrangement process, a sealing member arrangement process, a dam arrangement process, and an element member arrangement process. FIG. 1B shows a covering step, and FIG. 1C shows a step of lifting the sealing layer-covered optical semiconductor element with a dam / release layer. 2D to FIG. 2F are process diagrams for explaining the method of manufacturing the optical semiconductor device of the present invention, following FIG. 1C. FIG. 2D is a process of peeling the first release layer. FIG. 2E is a process of peeling. 2F shows a mounting process. FIG. 3 shows an exploded perspective view of the press shown in FIG. 1A. 4A and 4B are a bottom view and a plan view of the press shown in FIG. 1A, FIG. 4A is a bottom view of the upper mold, and FIG. 4B is a plan view of the lower mold. FIG. 5 shows an enlarged cross-sectional view of the press shown in FIG. 1A. FIG. 6 shows a preparation step, a spacer arrangement step, a sealing member arrangement step, a dam arrangement step, and an element member arrangement step in a modification of the method for manufacturing an optical semiconductor device of the present invention. FIG. 7 shows a coating process of a modification of the method for manufacturing an optical semiconductor device of the present invention. FIG. 8 shows a preparation step, a spacer arrangement step, a sealing member arrangement step, a dam arrangement step, and an element member arrangement step in a modification of the method for manufacturing an optical semiconductor device of the present invention. FIG. 9 is a process diagram for explaining a modification of the manufacturing method of the optical semiconductor device. FIG. 9A shows a preparation process, a spacer arrangement process, a sealing member arrangement process, a dam arrangement process, and an element member arrangement process. 9C shows a step of pulling up the optical semiconductor device with a dam / peeling layer, and FIG. 9D shows a step of separating the optical semiconductor element.

In FIG. 1, the up and down direction on the paper surface is the up and down direction (an example of a press direction and a thickness direction, which will be described later, the first direction), and the upper side on the paper surface is the upper side (upstream in the press direction, one side in the first direction). Is the lower side (downstream in the pressing direction, the other side in the first direction). In FIG. 1, the left and right direction on the paper is the left and right direction (second direction orthogonal to the pressing direction), the left side on the paper is the left side (one side in the second direction), and the right side on the paper is the right side (the other side in the second direction). is there. In FIG. 1, the paper thickness direction is the front-rear direction (the third direction orthogonal to the press direction and the second direction), the left side of the paper is the left side (one side in the third direction), and the right side of the paper is the right side (third). Direction other side). Specifically, it conforms to the direction arrow in each figure.

As shown in FIG. 2E, an example of the manufacturing method of the sealing layer-covered optical semiconductor element of the present invention includes an optical semiconductor element 16 and a sealing layer 13 that is covered and sealed by the optical semiconductor element 16. This is a manufacturing method of the sealing layer-covered optical semiconductor element 10. The manufacturing method of the sealing layer-covered optical semiconductor element 10 includes a preparation process, a spacer arrangement process, a sealing member arrangement process, an element member arrangement process, a dam arrangement process, and a covering process. Hereinafter, each step will be described in detail with reference to FIGS. 1A to 5.

<1. Preparation process>
In the preparation step, the press 1 is prepared.

As shown in FIGS. 1A and 3, the press 1 includes a lower mold 2 as a first mold and an upper mold 3 as a second mold. Further, the press 1 includes a heater 7 as a heat source and a plurality (four) of springs 22.

The lower mold 2 is disposed at the lower part of the press 1 and is formed in a substantially rectangular flat plate shape extending in the left-right direction and the front-rear direction. The lower mold 2 is made of a metal such as iron, stainless steel, or aluminum. As shown in FIGS. 3 and 4B, the lower mold 2 is provided with a plurality (four) of first recesses 23.

The plurality of (four) first recesses 23 are formed such that the upper surface of the lower mold 2 is recessed downward. The plurality of (four) first recesses 23 are arranged at intervals in the front-rear direction and the left-right direction. Each of the plurality (four) of first recesses 23 is arranged at each corner of the lower mold 2.

As shown in FIG. 3, the upper mold 3 is configured so as to be opposed to the upper side of the lower mold 2 in the press 1. The upper mold 3 is formed in the same shape as the outer shape of the lower mold 2. Specifically, the upper mold 3 is formed in a substantially rectangular flat plate shape extending in the left-right direction and the front-rear direction. As shown in FIG. 3 and FIG. 4A, the upper mold 3 is made of the metal exemplified in the lower mold 2. The upper mold 3 is provided with a plurality of (four) second recesses 25.

The plurality of (four) second recesses 25 are formed at the corners of the upper mold 3 so as to correspond to the plurality (four) first recesses 23 provided on the lower flat plate 4 on the lower surface of the upper mold 3. Is arranged. Specifically, the plurality (four) of the second recesses 25 are arranged so as to overlap with the plurality of (four) first recesses 23 when projected in the vertical direction. Each of the multiple (four) second recesses 25 is formed such that the lower surface of the upper mold 3 is recessed upward.

Further, the upper mold 3 is configured to be pressable against the lower mold 2. Specifically, the upper mold 3 is connected to a drive unit (not shown) that can apply pressure to the lower mold 2.

As shown in FIG. 1A, the heater 7 is disposed on each of the lower surface of the lower mold 2 and the upper surface of the upper mold 3. The heater 7 is configured to heat the lower mold 2 and the upper mold 3.

Although the springs 22 are not shown in FIG. 1A, a plurality of (four) springs 22 are provided. Each of the plurality of (four) springs 22 is a pressing spring that extends in the vertical direction and is configured to be contractible in the vertical direction and has a pressing force in the vertical direction. As shown in FIG. 3, the lower end portion of the spring 22 is accommodated and fixed in the first recess 23, while the upper end portion of the spring 22 is accommodated and fixed in the second recess 25.

To prepare the press 1, as shown in FIG. 1A, a lower mold 2 provided with a heater 7 and an upper mold 3 provided with a heater 7 are prepared.

At this time, the upper mold 3 is not yet arranged opposite to the upper side of the lower mold 2 and will be arranged opposite to the upper side of the lower mold 2 in the covering step as will be described later. Further, the spring 22 is not arranged in the lower mold 2 but is arranged in the lower mold 2 in the covering step.

<2. Spacer placement process>
(Preparation of spacer)
In the spacer arranging step, as shown in FIG. 3, first, a plurality (two) of spacers 4 as regulating members are prepared.

The plurality of (two) spacers 4 are formed in a substantially square bar (rectangular column) shape extending in the front-rear direction. As shown in FIG. 4B, each of the plurality (two) of spacers 4 is formed in a substantially rectangular shape in plan view that is long in the front-rear direction. As shown in FIGS. 3 and 5, each of the plurality (two) of spacers 4 has a cross-sectional shape when cut in the left-right direction and the vertical direction, and a cross-sectional shape when cut in the front-rear direction and the vertical direction. It is formed in a substantially rectangular shape.

The spacer 4 is made of a material having mechanical strength, wear resistance, and heat resistance. Specific examples of such a material include metals such as iron, stainless steel, and aluminum, such as polyphenylene sulfide (PPS). Polyarylate (PAR) Polyamideimide (PAI) Polyetherimide (PEI) Polyetheretherketone (PEEK) Polysulfone (PSF) Polyethersulfone (PES) and other resins (specifically engineering-plastic) It is done. Preferably, a metal, specifically, a metal of the lower mold 2 and the upper mold 3 is used.

The length in the front-rear direction of each of the plurality (two) of spacers 4 is adjusted to the length over the front end portion and the rear end portion of the lower mold 2. The length (width) of each of the plurality (two) of spacers 4 is, for example, 3 mm or more, preferably 10 mm or more, and for example, 100 mm or less, preferably 50 mm or less. As shown in FIG. 5, the vertical length T1 (thickness T1) of each of the plurality (two) of spacers 4 is a thickness corresponding to a design thickness T0 (see FIG. 1B) of a sealing layer 13 to be described later. Specifically, the thickness is appropriately set according to the design thickness T0 of the sealing layer 13 (see FIG. 1B) and the thickness T2 of the first release layer 12 (see FIG. 5). Specifically, the thickness T1 of each of the plurality (two) of spacers 4 is, for example, 50 μm or more, preferably 100 μm or more, and for example, 5000 μm or less, preferably 1000 μm or less.

(Spacer arrangement)
Next, the prepared plural (two) spacers 4 are arranged on the upper surface of the lower mold 2. Specifically, each of the plurality (two) of spacers 4 is placed on each of both ends of the upper die 2 in the left-right direction.

<3. Sealing member placement process>
(Preparation of sealing member)
In the sealing member arranging step, as shown in FIG. 3, first, the sealing member 11 is prepared.

(Sealing member)
The sealing member 11 is formed in a substantially rectangular flat plate shape extending in the front-rear direction and the left-right direction. The sealing member 11 includes a first release layer 12 as a release layer and a B-stage seal layer 13 disposed on the upper surface (surface) of the first release layer 13. The sealing member 11 preferably includes only the first release layer 12 and the sealing layer 13.

In order to protect the sealing layer 13 until the first release layer 12 seals the optical semiconductor element 16 (described later) with the sealing layer 13, the back surface of the sealing layer 13 (the bottom surface in FIG. The upper surface in 2D is detachably attached. That is, the first release layer 12 covers the back surface (the lower surface in FIG. 1A and the upper surface in FIG. 2D) of the sealing layer 13 when the sealing member 11 is shipped, transported, and stored. A flexible material that is laminated on the back surface and can be peeled off from the back surface (upper surface in FIG. 2D) of the sealing layer 13 so as to be curved in a substantially U shape immediately before use of the sealing layer 13 as shown in FIG. 2D. It is a sex film. That is, the 1st peeling layer 12 consists only of a flexible film. Moreover, the sticking surface (the lower surface in FIG. 1A) of the first release layer 12, that is, the contact surface with respect to the sealing layer 13 is subjected to a release treatment such as a fluorine treatment if necessary.

As shown in FIG. 3, the first release layer 12 has a flat plate shape along the left-right direction and the front-rear direction, and specifically, is formed in a substantially rectangular shape in plan view that is long in the left-right direction.

Examples of the material for forming the first release layer 12 include a thermoplastic resin. Examples of the thermoplastic resin include a styrene resin such as polystyrene, an olefin resin such as polyethylene and polypropylene, a polyester resin such as PET, an acrylic resin such as an acrylic resin, such as a fluorine resin, and the like. Examples thereof include thermoplastic silicone resins. Preferably, a polyester resin is used. The softening temperature of the 1st peeling layer 12 is 40 degreeC or more, for example, Preferably, it is 60 degreeC or more, for example, is 150 degrees C or less, Preferably, it is 100 degrees C or less.

As shown in FIG. 4B, the area S2 of the first release layer 12 is formed larger than the area S1 of the sealing layer 13.

As shown in FIG. 5, the thickness T2 of the first release layer 12 is, for example, 20 μm or more, preferably 30 μm or more, more preferably 50 μm or more, from the viewpoint of rigidity, flexibility, handling properties, and cost reduction. In addition, for example, it is 200 μm or less, preferably 100 μm or less.

As shown in FIG. 3, the sealing layer 13 has a flat plate shape, specifically, has a predetermined thickness, extends in the front-rear direction and the left-right direction, and has a flat upper surface and a flat lower surface. Yes. The outer shape of the sealing layer 13 is smaller than the outer shape of the first release layer 12, and the peripheral ends (front end, rear end, left end, and right end of the upper surface of the first release layer 12 are formed. ) In the front-rear direction and the center in the left-right direction of the upper surface of the first release layer 12 so as to be exposed.

Further, the sealing layer 13 is not a sealing layer-covered optical semiconductor element 10 (see FIG. 2E) and an optical semiconductor device 30 (see FIG. 2F), which will be described later, but the sealing layer-covered optical semiconductor element 10 and the optical semiconductor device 30. One component, that is, a component for producing the sealing layer-covered optical semiconductor element 10 and the optical semiconductor device 30, and is configured without including the optical semiconductor element 16 and the substrate 20 on which the optical semiconductor element 16 is mounted. .

Therefore, the sealing member 11 including the first release layer 12 and the sealing layer 13 is a device that can be used industrially by distributing components alone.

The sealing layer 13 is formed in a sheet form from a B-stage sealing composition. The sealing composition contains, for example, a sealing resin as an essential component. The sealing resin is a transparent resin, and specifically includes a curable resin such as a thermosetting resin or a photocurable resin, and preferably includes a thermosetting resin.

Examples of the thermosetting resin include a two-stage reaction curable resin and a one-stage reaction curable resin.

The two-stage reaction curable resin has two reaction mechanisms. In the first stage reaction, the A stage state is changed to the B stage (semi-cured), and then in the second stage reaction, the B stage state is obtained. To C-stage (complete curing). That is, the two-stage reaction curable resin is a thermosetting resin that can be in a B-stage state under appropriate heating conditions. The B stage state is a state between the A stage state in which the thermosetting resin is in a liquid state and the C stage state in which the thermosetting resin is completely cured, and curing and gelation proceed slightly, and the elastic modulus is C. A semi-solid or solid state smaller than the elastic modulus in the stage state.

The first-stage reaction curable resin has one reaction mechanism, and can be C-staged (completely cured) from the A-stage state by the first-stage reaction. However, in the first stage reaction curable resin, the reaction stops in the middle of the first stage reaction, and can be changed from the A stage state to the B stage state. Is resumed, and includes a thermosetting resin that can be converted into a C stage (completely cured) from the B stage state. That is, such a thermosetting resin is a thermosetting resin that can be in a B-stage state.

Examples of the sealing resin include silicone resin, urethane resin, epoxy resin, polyimide resin, phenol resin, urea resin, melamine resin, and unsaturated polyester resin. Preferably, a silicone resin is used.

Examples of the silicone resin include addition reaction curable silicone resin compositions, condensation reaction / addition reaction curable silicone resins, and the like. Silicone resins may be used alone or in combination.

The addition reaction curable silicone resin composition is a one-step reaction curable resin and contains, for example, an alkenyl group-containing polysiloxane, a hydrosilyl group-containing polysiloxane, and a hydrosilylation catalyst.

The alkenyl group-containing polysiloxane contains two or more alkenyl groups and / or cycloalkenyl groups in the molecule. The alkenyl group-containing polysiloxane is specifically represented by the following average composition formula (1).

Average composition formula (1):
R ¹ _a R ² _b SiO _{(4-ab) / 2}
(In the formula, R ¹ represents an alkenyl group having 2 to 10 carbon atoms and / or a cycloalkenyl group having 3 to 10 carbon atoms. R ² represents an unsubstituted or substituted monovalent carbon atom having 1 to 10 carbon atoms. A hydrogen group (excluding an alkenyl group and a cycloalkenyl group); a is from 0.05 to 0.50, and b is from 0.80 to 1.80.
In the formula (1), examples of the alkenyl group represented by R ¹ include alkenyl having 2 to 10 carbon atoms such as vinyl, allyl, propenyl, butenyl, pentenyl, hexenyl, heptenyl, octenyl and the like. Groups. Examples of the cycloalkenyl group represented by R ¹ include a cycloalkenyl group having 3 to 10 carbon atoms such as a cyclohexenyl group and a norbornenyl group.

R ¹ is preferably an alkenyl group, more preferably an alkenyl group having 2 to 4 carbon atoms, and still more preferably a vinyl group.

The alkenyl groups represented by R ¹ may be the same type or a plurality of types.

The monovalent hydrocarbon group represented by R ² is an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms other than an alkenyl group and a cycloalkenyl group.

Examples of the unsubstituted monovalent hydrocarbon group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, a pentyl group, a hexyl group, and a pentyl group. Alkyl groups having 1 to 10 carbon atoms such as heptyl group, octyl group, 2-ethylhexyl group, nonyl group and decyl group, for example, cyclohexane having 3 to 6 carbon atoms such as cyclopropyl, cyclobutyl group, cyclopentyl group and cyclohexyl group. Examples thereof include alkyl groups such as aryl groups having 6 to 10 carbon atoms such as phenyl, tolyl and naphthyl groups, and aralkyl groups having 7 to 8 carbon atoms such as benzyl and benzylethyl groups. Preferred examples include an alkyl group having 1 to 3 carbon atoms and an aryl group having 6 to 10 carbon atoms, and more preferred examples include a methyl group and / or a phenyl group.

On the other hand, examples of the substituted monovalent hydrocarbon group include those obtained by substituting a hydrogen atom in the above-mentioned unsubstituted monovalent hydrocarbon group with a substituent.

Examples of the substituent include a halogen atom such as a chlorine atom, such as a glycidyl ether group.

Specific examples of the substituted monovalent hydrocarbon group include a 3-chloropropyl group and a glycidoxypropyl group.

The monovalent hydrocarbon group may be unsubstituted or substituted, and is preferably unsubstituted.

The monovalent hydrocarbon groups represented by R ² may be of the same type or a plurality of types. Preferably, a methyl group and / or a phenyl group are mentioned, More preferably, combined use of a methyl group and a phenyl group is mentioned.

A is preferably 0.10 or more and 0.40 or less.

B is preferably 1.5 or more and 1.75 or less.

The weight average molecular weight of the alkenyl group-containing polysiloxane is, for example, 100 or more, preferably 500 or more, and for example, 10,000 or less, preferably 5000 or less. The weight average molecular weight of the alkenyl group-containing polysiloxane is a conversion value based on standard polystyrene measured by gel permeation chromatography.

The alkenyl group-containing polysiloxane is prepared by an appropriate method, and a commercially available product can also be used.

Further, the alkenyl group-containing polysiloxane may be of the same type or a plurality of types.

The hydrosilyl group-containing polysiloxane contains, for example, two or more hydrosilyl groups (SiH groups) in the molecule. Specifically, the hydrosilyl group-containing polysiloxane is represented by the following average composition formula (2).

Average composition formula (2):
H _c R ³ _d SiO _{(4-cd) / 2}
(Wherein R ³ represents an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms (excluding an alkenyl group and / or a cycloalkenyl group), and c is 0.30 or more) 1.0, and d is 0.90 or more and 2.0 or less.)
In formula (2), an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms represented by R ³ is an unsubstituted or substituted carbon group having 1 to 10 carbon atoms represented by R ² in formula (1). The same thing as the monovalent hydrocarbon group of is illustrated. Preferably, an unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 10 carbon atoms, and an aryl group having 6 to 10 carbon atoms, more preferably a methyl group. And / or a phenyl group.

C is preferably 0.5 or less.

D is preferably 1.3 or more and 1.7 or less.

The weight average molecular weight of the hydrosilyl group-containing polysiloxane is, for example, 100 or more, preferably 500 or more, and for example, 10,000 or less, preferably 5000 or less. The weight average molecular weight of the hydrosilyl group-containing polysiloxane is a conversion value based on standard polystyrene measured by gel permeation chromatography.

The hydrosilyl group-containing polysiloxane is prepared by an appropriate method, and a commercially available product can also be used.

Also, the hydrosilyl group-containing polysiloxane may be of the same type or a plurality of types.

Average composition formula described above (1) and the average compositional formula (2), at least one of the hydrocarbon groups R ² and R ³ include a phenyl group, preferably a carbide in both R ² and R ³ Hydrogen contains a phenyl group. In addition, since at least one of the hydrocarbon groups of R ² and R ³ contains a phenyl group, the addition reaction curable silicone resin composition is a phenyl silicone resin composition.

The blending ratio of the hydrosilyl group-containing polysiloxane is the ratio of the number of moles of alkenyl groups and cycloalkenyl groups of the alkenyl group-containing polysiloxane to the number of moles of hydrosilyl groups of the hydrosilyl group-containing polysiloxane (number of moles of alkenyl groups and cycloalkenyl groups). / Number of moles of hydrosilyl group) is adjusted to be, for example, 1/30 or more, preferably 1/3 or more, and for example, 30/1 or less, preferably 3/1 or less.

The hydrosilylation catalyst is a substance (addition catalyst) that improves the reaction rate of the hydrosilylation reaction (hydrosilyl addition) between the alkenyl group and / or cycloalkenyl group of the alkenyl group-containing polysiloxane and the hydrosilyl group of the hydrosilyl group-containing polysiloxane. If it exists, it will not specifically limit, For example, a metal catalyst is mentioned. Examples of the metal catalyst include platinum catalysts such as platinum black, platinum chloride, chloroplatinic acid, platinum-olefin complexes, platinum-carbonyl complexes, and platinum-acetyl acetate, such as palladium catalysts such as rhodium catalyst.

The blending ratio of the hydrosilylation catalyst is, for example, 1.0 ppm or more on a mass basis with respect to the alkenyl group-containing polysiloxane and the hydrosilyl group-containing polysiloxane as the metal amount of the metal catalyst (specifically, metal atom). Yes, for example, 10000 ppm or less, preferably 1000 ppm or less, and more preferably 500 ppm or less.

The addition reaction curable silicone resin composition is prepared by blending an alkenyl group-containing polysiloxane, a hydrosilyl group-containing polysiloxane, and a hydrosilylation catalyst in the above-described proportions.

The above addition reaction curable silicone resin composition is prepared as an A stage (liquid) state by blending an alkenyl group-containing polysiloxane, a hydrosilyl group-containing polysiloxane, and a hydrosilylation catalyst, and then the reaction is stopped midway. By doing so, it is prepared as a B stage (liquid) state.

That is, as described above, the addition reaction curable silicone resin composition can be obtained by hydrosilylation of an alkenyl group and / or cycloalkenyl group of an alkenyl group-containing polysiloxane with a hydrosilyl group of a hydrosilyl group-containing polysiloxane by heating under desired conditions. Then, the hydrosilylation addition reaction is once stopped. As a result, the A stage state can be changed to the B stage (semi-cured) state. Thereafter, the above-described hydrosilylation addition reaction is resumed and completed by heating under further desired conditions. As a result, the B stage state can be changed to the C stage (fully cured) state.

In addition, when the addition reaction curable silicone resin composition is in a B stage (semi-cured) state, it is solid. The B-stage addition reaction curable silicone resin composition can have both thermoplasticity and thermosetting properties. That is, the B-stage addition reaction curable silicone resin composition is once plasticized by heating and then completely cured.

The condensation / addition reaction curable silicone resin composition is a two-stage reaction curable resin, and specifically, for example, those described in JP 2010-265436 A, JP 2013-187227 A, and the like. 1 to 8 condensation / addition reaction curable silicone resin compositions, for example, JP 2013-091705 A, JP 2013-001815 A, JP 2013-001814 A, JP 2013-001813 A, Examples thereof include a cage-type octasilsesquioxane-containing silicone resin composition described in JP2012-102167A. The condensation / addition reaction curable silicone resin composition is solid and has both thermoplasticity and thermosetting properties.

As the condensation / addition reaction curable silicone resin composition, a methyl silicone resin composition in which all alkyl groups directly bonded to silicon atoms are methyl groups (two-stage reaction curable methyl silicone resin composition, Specific examples include a methyl silicone resin composition prepared from silanol-type polydimethylsiloxane at both ends, dimethylpolysiloxane-CO-methylhydrogensiloxane, and an alkenyl group-containing silicon compound.

The condensation / addition reaction curable silicone resin composition is prepared from a stage A state to a stage B (semi-cured) state by causing a condensation reaction by heating. The condensation / addition reaction curable silicone resin composition in the B stage state can then undergo an addition reaction by further heating to be in the C stage (fully cured) state.

As the thermosetting resin, from the viewpoint of durability and optical properties, a one-step reaction curable resin, specifically, an addition reaction curable silicone resin composition can be mentioned, and more preferably, a phenyl silicone resin composition. Is mentioned.

The refractive index of the sealing resin is, for example, 1.50 or more and, for example, 1.60 or less. The refractive index of the sealing resin is calculated by an Abbe refractometer. The refractive index of the sealing resin is the refraction between the curable resin of the B stage and the curable resin of the C stage (corresponding to a product described later) when the sealing resin is a curable resin of the B stage. Since the rate is substantially the same, it is calculated as the refractive index of the C-stage curable resin.

The blending ratio of the sealing resin is, for example, 20% by mass or more, preferably 25% by mass or more, and, for example, 70% by mass or less, preferably 50% by mass or less, with respect to the sealing composition. More preferably, it is less than 50 mass%, More preferably, it is 40 mass% or less, Most preferably, it is 30 mass% or less. If the compounding ratio of the sealing resin is within the above range, the moldability of the sealing layer 13 can be ensured.

(Filler, phosphor)
In addition to the above-described sealing resin, the sealing composition can also contain, for example, a filler and / or a phosphor.

The filler is blended in the sealing composition as necessary in order to improve the moldability of the sealing layer 13 (see FIG. 1A). Specifically, the filler is blended in the sealing resin before the reaction (specifically, the A stage). It does not specifically limit as a filler, For example, an inorganic filler and an organic filler are mentioned. These can be used alone or in combination.

Examples of the inorganic filler include silica (SiO ₂ ), talc (Mg ₃ (Si ₄ O ₁₀ ) (HO) ₂ ), alumina (Al ₂ O ₃ ), boron oxide (B ₂ O ₃ ), calcium oxide (CaO). ), Zinc oxide (ZnO), strontium oxide (SrO), magnesium oxide (MgO), zirconium oxide (ZrO ₂ ), barium oxide (BaO), antimony oxide (Sb ₂ O ₃ ), and other oxides such as aluminum nitride Examples thereof include inorganic particles (inorganic materials) such as nitrides such as (AlN) and silicon nitride (Si ₃ N ₄ ). Moreover, as an inorganic filler, the composite inorganic particle prepared from the inorganic substance illustrated above is mentioned, for example, Preferably, the composite inorganic oxide particle (specifically glass particle etc.) prepared from an oxide is mentioned. .

The composite inorganic oxide particles include, for example, silica, or silica and boron oxide as main components, and alumina, calcium oxide, zinc oxide, strontium oxide, magnesium oxide, zirconium oxide, barium oxide, antimony oxide, and the like. Is contained as a minor component. The content ratio of the main component in the composite inorganic oxide particles is, for example, more than 40% by mass, preferably 50% by mass or more, and for example, 90% by mass or less, preferably with respect to the composite inorganic oxide particles. Is 80 mass% or less. The content ratio of the subcomponent is the remainder of the content ratio of the main component described above.

The composite oxide particles are blended with the main component and subcomponents described above, heated and melted, rapidly cooled, and then pulverized by, for example, a ball mill or the like. It is obtained by applying surface processing (specifically, spheroidization, etc.).

Examples of organic fillers include silicone resins, acrylic resins, styrene resins, acrylic-styrene resins, silicone resins, polycarbonate resins, benzoguanamine resins, polyolefin resins, polyester resins, polyamide resins, and polyimides. Examples thereof include resin particles made of a resin. Preferably, silicone particles made of a silicone resin are used.

The silicone particles are fine particles of polysiloxane (after curing) having a crosslinked structure, and the refractive index thereof approximates the refractive index of the curable resin after curing in the sealing composition.

The filler is preferably an inorganic filler.

The shape of the filler is not particularly limited, and examples thereof include a spherical shape, a plate shape, and a needle shape. Preferably, spherical shape is mentioned from a fluid viewpoint. The average particle diameter of the filler is, for example, 10 μm or more, preferably 15 μm or more, and for example, 50 μm or less, preferably 40 μm or less, more preferably 30 μm or less, and further preferably 25 μm or less. When the average particle diameter of a filler exceeds the said upper limit, there exists a tendency for a filler to precipitate in a sealing composition (varnish mentioned later). On the other hand, when the average particle diameter of the filler is less than the lower limit, the sheet formability of the sealing composition tends to decrease, or the transparency of the sealing layer 13 (see FIG. 1A) tends to decrease. . The average particle diameter of the filler is calculated as a D50 value. Specifically, it is measured by a laser diffraction particle size distribution meter.

The refractive index of the filler is, for example, 1.40 or more, preferably 1.50 or more, more preferably 1.52 or more, and for example, 1.60 or less, preferably 1.58. It is as follows. If the refractive index of the filler is within the above range, the difference from the refractive index of the sealing resin described above can be made within the desired range. That is, the absolute value of the difference in refractive index between the sealing resin and the filler can be reduced, and therefore the transparency of the sealing layer 13 can be improved. The refractive index of the filler is calculated by an Abbe refractometer.

The blending ratio of the filler is, for example, 20% by mass or more, preferably 25% by mass or more, more preferably 30% by mass or more, and further preferably 40% by mass or more with respect to the sealing composition. For example, it is 80 mass% or less, Preferably, it is 60 mass% or less. Further, the blending ratio of the filler is, for example, 25 parts by mass or more, preferably 33.3 parts by mass or more, more preferably 42.8 parts by mass or more with respect to 100 parts by mass of the sealing resin. For example, it is 400 parts by mass or less, preferably 150 parts by mass or less.

If the blending ratio of the filler is within the above range, excellent moldability of the sealing layer 13 with the filler can be ensured.

The phosphor has a wavelength conversion function, and examples thereof include a yellow phosphor capable of converting blue light into yellow light, and a red phosphor capable of converting blue light into red light.

Examples of the yellow phosphor include silicate phosphors such as (Ba, Sr, Ca) ₂ SiO ₄ : Eu, (Sr, Ba) ₂ SiO ₄ : Eu (barium orthosilicate (BOS)), for example, Y ₃ Al Garnet-type phosphors having a garnet-type crystal structure such as ₅ O ₁₂ : Ce (YAG (yttrium, aluminum, garnet): Ce), Tb ₃ Al ₃ O ₁₂ : Ce (TAG (terbium, aluminum, garnet): Ce) Examples thereof include oxynitride phosphors such as Ca-α-SiAlON.

Examples of the red phosphor include nitride phosphors such as CaAlSiN ₃ : Eu and CaSiN ₂ : Eu.

Examples of the shape of the phosphor include a spherical shape, a plate shape, and a needle shape. Preferably, spherical shape is mentioned from a fluid viewpoint.

The average value of the maximum length of the phosphor (in the case of a sphere, the average particle diameter) is, for example, 0.1 μm or more, preferably 1 μm or more, and for example, 200 μm or less, preferably 100 μm or less. But there is.

The specific gravity of the phosphor is, for example, 2.0 or more, and, for example, 9.0 or less.

Fluorescent substances can be used alone or in combination.

The blending ratio of the phosphor is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, for example, 80 parts by mass or less, preferably 50 parts by mass with respect to 100 parts by mass of the sealing resin. Or less.

(Manufacture of sealing layer)
In order to manufacture the sealing layer 13, first, a sealing composition containing the above-described sealing resin and, if necessary, a filler and / or a phosphor is prepared. Specifically, a sealing composition containing an A-stage sealing resin and, if necessary, a filler and / or a phosphor is prepared.

For example, a sealing resin and, if necessary, a filler and / or a phosphor are mixed at the above-described blending ratio.

Thereby, a sealing composition in which a filler is dispersed in a sealing resin is prepared as a varnish.

The viscosity of the varnish at 25 ° C. is, for example, 1,000 mPa · s or more, preferably 4,000 mPa · s or more, and, for example, 1,000,000 mPa · s or less, preferably 200,000 mPa · s. It is as follows. The viscosity is measured by adjusting the temperature of the varnish to 25 ° C. and using an E-type cone.

Next, the prepared varnish is applied. Specifically, as shown in FIG. 1A, varnish is applied to the surface (upper surface) of the first release layer 12.

In order to apply the varnish to the surface of the first release layer 12, for example, a coating device such as a dispenser, an applicator, or a slit die coater is used. In the above application, the varnish is applied in a pattern that exposes the peripheral edge of the upper surface of the first release layer 12.

A coating film is formed by applying the varnish to the first release layer 12.

Thereafter, when the sealing resin is a curable resin, the coating film is semi-cured. That is, the A stage coating film is changed to the B stage. Specifically, if the curable resin is a thermosetting resin, the coating film is heated. As heating conditions, the heating temperature is 70 ° C. or higher, preferably 80 ° C. or higher, and 120 ° C. or lower, preferably 100 ° C. or lower. If heating temperature is the said range, curable resin can be reliably made into B stage. The heating time is, for example, 5 minutes or more, preferably 8 minutes or more, and for example, 30 minutes or less, preferably 20 minutes or less.

Or, if the curable resin is a photocurable resin, the coating film is irradiated with ultraviolet rays. Specifically, the coating film is irradiated with ultraviolet rays using a UV lamp or the like.

This makes the A stage curable resin in the coating film a B stage.

When the curable resin contains an addition reaction curable silicone resin composition, the hydrosilylation reaction (addition reaction) between the alkenyl group and / or cycloalkenyl group and the hydrosilyl group proceeds halfway and is temporarily stopped. To do.

On the other hand, when the curable resin resin contains a condensation reaction / addition reaction curable silicone resin, the condensation reaction is completed.

When the sealing resin becomes the B stage, the sealing layer 13 (or coating film) is repelled from the first release layer 12, and therefore the sealing layer 13 aggregates in a plan view, and in a plan view. The area becomes smaller. As a result, the sealing layer 13 tends to increase in thickness. On the other hand, when the sealing layer 13 becomes a B stage by heating, the sealing layer 13 tends to shrink with heating, and in particular, tends to become thinner in the thickness direction. For this reason, the increase in thickness due to repelling of the sealing layer 13 from the first release layer 12 cancels out the decrease in thickness due to heat shrinkage, and the thickness of the sealing layer 13 does not change substantially. .

Thereby, as shown in FIG. 1A, the sealing member 11 including the first peeling layer 12 and the sealing layer 13 laminated on the first peeling layer 12 is obtained.

In the sealing layer 13, fillers and / or phosphors blended as necessary are uniformly dispersed in the silicone resin composition as a matrix.

The sealing layer 13 in a semi-cured (B stage) state has flexibility, and after being in a semi-cured (B stage) state, it is in a fully cured (C stage) state to be described later (that is, A C stage product) is possible.

(Physical properties of the sealing layer)
In addition, the B-stage sealing layer 13 preferably has both plasticity and curability when having both plasticity and curability. More preferably, the B-stage sealing layer 13 has both thermoplasticity and thermosetting properties. That is, the sealing layer 13 of the B stage can be cured after being plasticized once by heating.

The thermoplastic temperature of the sealing layer 13 is, for example, 40 ° C. or more, preferably 60 ° C. or more, and for example, 120 ° C. or less, preferably 100 ° C. or less. The thermoplastic temperature is a temperature at which the sealing layer 13 exhibits thermoplasticity. Specifically, it is a temperature at which the sealing resin of the B stage is softened by heating, and is substantially the same as the softening temperature. .

The thermosetting temperature of the sealing layer 13 is, for example, 100 ° C. or more, preferably 120 ° C. or more, and for example, 150 ° C. or less. The thermosetting temperature is a temperature at which the B-stage sealing layer 13 exhibits thermosetting properties, and specifically, a temperature at which the plasticized sealing layer 13 is completely cured by heating to become a solid state. .

The B-stage sealing layer 13 (the sealing layer 13 formed from the sealing composition containing the B-stage sealing resin) has a shear storage elastic modulus G ′ of 80 ° C., for example, 3 Pa or more, preferably 12 Pa or more, and for example, 140 Pa or less, preferably 70 Pa or less. If the shear storage modulus G ′ at 80 ° C. of the sealing layer 13 is not more than the above upper limit, it is possible to effectively prevent the optical semiconductor element 16 from being damaged when the optical semiconductor element 16 described below is sealed. it can. On the other hand, if the shear storage elastic modulus G ′ at 80 ° C. of the sealing layer 13 is equal to or higher than the lower limit, good shape retention of the sealing layer 13 when sealing the optical semiconductor element 16 is ensured, and the sealing layer 13 is sealed. The handleability of the stop layer 13 can be improved. Moreover, if the 80 degreeC shear storage elastic modulus G 'of the sealing layer 13 is more than the said minimum, the thickness uniformity of the sealing layer 13 can be ensured, and it can adjust to desired thickness.

The shear storage modulus G ′ at 80 ° C. of the sealing layer 13 is obtained by dynamic viscoelasticity measurement under the conditions of a frequency of 1 Hz, a temperature rising rate of 20 ° C./min, and a temperature range of 20 to 150 ° C.

Further, the transmittance of the sealing layer 13 with respect to light having a wavelength of 460 nm when the thickness is 600 μm is, for example, 70% or more, preferably 80% or more, more preferably 90% or more, and still more preferably 95% or more. For example, it is 100% or less. If the transmittance is equal to or higher than the lower limit, the light emitted from the optical semiconductor element 16 can be sufficiently transmitted after the optical semiconductor element 16 is sealed. The transmittance of the sealing layer 13 is measured using, for example, an integrating sphere.

(Dimension of sealing layer)
The dimension of the sealing layer 13 is adjusted so that the volume ratio of the sealing layer 13 described later falls within a desired range.

The length in the front-rear direction and the length in the left-right direction of the sealing layer 13 are appropriately set depending on the number, dimensions, arrangement, and the like of the optical semiconductor elements 16.

As shown in FIG. 4B, the area S1 of the sealing layer 13 is, for example, 95% or less, preferably 90% or less, and more preferably 85% or less, with respect to the area S2 of the first release layer 12. For example, it is 10% or more.

As shown in FIG. 5, the thickness T4 of the sealing layer 13 is thicker (ie, T4 than the thickness T1 of the spacer 4 minus the thickness T2 of the first release layer 12 (T1-T2)). > (T1-T2)). Therefore, the sealing layer 13 can be reliably compressed in the up-down direction in the press of the next coating process.

Specifically, the thickness T4 of the sealing layer 13 is, for example, more than 100%, preferably 102%, of the thickness T1 of the spacer 4 minus the thickness T2 of the first release layer 12 (T1-T2). As mentioned above, More preferably, it is 105% or more, for example, 120% or less.

Specifically, the thickness T4 of the sealing layer 13 is, for example, 50 μm or more, preferably 100 μm or more, and for example, 1500 μm or less, preferably 800 μm or less.

If the thickness T4 of the sealing layer 13 is within the above range, the sealing layer 13 is accurately compressed in the vertical direction by pressing in the covering step, and the thickness T6 of the sealing layer 13 is adjusted to the design thickness T0 with accuracy. can do.

(Arrangement of sealing member)
Next, as shown in FIG. 3, the prepared sealing member 11 is arranged on the upper surface of the lower mold 2 so that the sealing layer 13 faces upward.

Specifically, the first release layer 12 is disposed on the upper surface of the lower mold 2 between the plural (two) spacers 4. As shown in FIG. 1A, the sealing member 11 is disposed so as to be sandwiched between a plurality (two) of spacers 4. Specifically, the sealing member 11 is disposed such that the right end portion of the first release layer 12 is spaced apart on the left side of the left side surface of the spacer 4 disposed on the right side, and the left end of the first release layer 12 The portion is disposed on the upper surface of the lower mold 2 so as to be disposed at a right interval on the right side of the right side surface of the spacer 4 disposed on the left side.

<4. Dam placement process>
(Preparation of dam)
In the dam arrangement step, first, a dam 5 as a dam member is prepared as shown in FIG.

The dam 5 is formed in a substantially rectangular frame shape in plan view corresponding to the outer shape of the sealing layer 13. Specifically, as shown in FIG. 4B, the outer shape of the dam 5 is formed to be slightly smaller than the outer shape of the first release layer 12. An opening 8 that penetrates the dam 5 in the vertical direction is formed at the center of the dam 5. The opening 8 is formed in a substantially rectangular shape in plan view corresponding to the outer shape of the sealing layer 13. The dam 5 extends in the left-right direction and is disposed opposite to each other with an interval in the front-rear direction, and the two second dam parts connecting the two left-right ends of the two first dam parts 5A. 5B in an integrated manner.

Examples of the material of the dam 5 include resin, resin-impregnated glass cloth, metal, and the like. These can be used alone or in combination.

Examples of the resin include a thermosetting resin and a thermoplastic resin. Preferably, a thermosetting resin is used.

The thermosetting resin is exemplified by a thermosetting resin that can be in the B-stage state exemplified in the sealing layer 13, and preferably a condensation reaction / addition reaction curing type described in JP 2010-265436 A Examples thereof include a silicone resin composition (two-stage reaction curable resin) and a phenyl-based silicone resin composition (addition reaction curable silicone resin composition, one-stage reaction curable resin).

Furthermore, as the thermosetting resin, a one-stage reaction curable resin that cannot be in a B-stage state is also exemplified. As the one-stage reaction curable resin, preferably, it cannot be controlled to stop in the middle of the one-stage reaction, that is, cannot enter the B stage state, and is changed from the A stage state to the C stage at once (completely An addition reaction curable silicone resin that cures) may be mentioned. As such an addition reaction curable silicone resin, for example, an alkenyl group-containing polysiloxane represented by the above average composition formula (1), a hydrosilyl group-containing polysiloxane represented by the above average composition formula (2), and One-step reaction-curable methyl silicone resin composition containing the hydrosilylation catalyst described above can be mentioned. In the above average composition formulas (1) and (2), both the hydrocarbons of R ² and R ³ are methyl groups. A commercially available product is used for the one-step reaction-curable methyl silicone resin composition. Examples of commercially available products include ELASTOSIL series (manufactured by Asahi Kasei Wacker Silicone Co., specifically, methyl silicone resin compositions such as ELASTOSIL LR7665), KER series (manufactured by Shin-Etsu Silicone Co., Ltd.), and the like.

Further, the resin may be prepared as a resin composition in which a filler is blended. Preferably, the resin may be prepared as a silicone resin composition in which an organic filler is blended in a silicone resin.

As the resin-impregnated glass cloth, glass cloth is impregnated with the above-described resin, and examples thereof include glass / epoxy resin in which glass cloth is impregnated with epoxy resin.

Examples of the metal include iron, stainless steel, and aluminum.

The material of the dam 5 is preferably a resin and a resin-impregnated glass cloth from the viewpoint of imparting flexibility to the dam 5, more preferably a resin, and still more preferably a silicone resin and a urethane resin. Particularly preferred is a silicone resin.

(Physical properties of the dam)
The tensile elastic modulus at 23 ° C. of the dam 5 is, for example, 0.3 MPa or more, preferably 1 MPa or more, more preferably 2 MPa or more, and 1000 MPa or less, preferably 500 MPa or less.

If the tensile elastic modulus of the dam 5 is equal to or greater than the above lower limit, the handling property of the dam 5 can be secured satisfactorily. On the other hand, if the tensile elastic modulus of the dam 5 is not more than the above upper limit, the thickness T6 of the sealing layer 13 can be accurately adjusted to the design thickness T0 while the dam 5 is compressed (pressed) together with the sealing layer 13. .

The tensile elastic modulus at 23 ° C. of the dam 5 is measured based on JIS K7161-1994.

The breaking elongation of the dam 5 is, for example, 1% or more, preferably 10% or more, more preferably 100% or more, still more preferably 200% or more, and 1000% or less, preferably 500% or less. More preferably, it is 400% or less.

If the breaking elongation of the dam 5 is not more than the above upper limit, the thickness T6 of the sealing layer 13 can be adjusted to the design thickness T0. If the breaking elongation of the dam 5 is not less than the above lower limit, the handling property of the dam 5 can be ensured satisfactorily.

The breaking elongation of the dam 5 is measured based on JIS K7161-1994.

(Dam dimensions)
The width (length in the front-rear direction) of the first dam part 5A and the width (length in the left-right direction) of the second dam part 5B are, for example, 1 mm or more, preferably 2 mm or more, and for example, 10 mm or less, preferably Is 5 mm or less. The longitudinal length between the two first dam portions 5A, that is, the longitudinal length of the opening 8, and the lateral length between the two second dam portions 5B, that is, the lateral length of the opening 8. The length is longer than the length of the sealing layer 13 in the front-rear direction and the length in the left-right direction. Each of the front-rear direction length and the left-right direction length of the opening 8 is, for example, more than 100%, preferably 102% or more, with respect to each of the front-rear direction length and the left-right direction length of the sealing layer 13. More preferably, it is 105% or more, for example, 200% or less.

Further, as shown in FIGS. 4B and 5, the opening cross-sectional area S8 along the front-rear direction and the left-right direction in the opening 8 of the dam 5 is formed larger than the area S1 of the sealing layer 13. In other words, the area S1 of the sealing layer 13 is smaller than the opening cross-sectional area S8 of the opening 8 of the dam 5, and is, for example, less than 100% with respect to the opening cross-sectional area S8 of the opening 8 of the dam 5. Preferably, it is 95% or less, more preferably 90% or less, and for example, 50% or more.

As shown in FIG. 5, the thickness T3 of the dam 5 is thicker than the thickness T4 of the sealing layer 13 (that is, T3> T4), and exceeds 100% of the thickness T4 of the sealing layer 13, for example, Preferably, it is 102% or more, more preferably 105% or more, and for example, 120% or less. As will be described later, the thickness T3 of the dam 5 is formed to be thicker than the design thickness T0 (see FIG. 1B) of the sealing layer 13 (T3> T0).

Specifically, the thickness T3 of the dam 5 is, for example, 100 μm or more, preferably 200 μm or more, more preferably 400 μm or more, and for example, 1500 μm or less.

(Placement of dam)
In order to arrange the dam 5, first, when the material of the dam 5 is a resin, a varnish containing the resin is prepared, and then the varnish is applied to the surface of a release sheet (not shown). Thereafter, when the material contains a thermosetting resin, the varnish is heated and cured. Thereafter, the cured product is externally processed into the above-described pattern. On the other hand, when the material of the dam 5 is a resin-impregnated glass cloth and / or metal, the resin-impregnated glass cloth and / or metal plate preliminarily formed into a sheet shape is processed into the above-described pattern.

Thereafter, the dam 5 is placed on the upper surface of the first release layer 12 so that the sealing layer 13 is inserted into the opening 8 of the dam 5.

Thereby, the dam 5 is disposed on the peripheral edge of the upper surface of the first release layer 12.

Alternatively, the dam 5 can be directly formed on the upper surface of the first release layer 12 by directly applying the varnish to the upper surface of the peripheral end portion of the first release layer 12 in the pattern described above.

As shown in FIG. 4B, the dam 5 is disposed so as to surround the sealing layer 13 because it is disposed at the peripheral end portion of the first release layer 12. Specifically, the inner surface of the dam 5 is disposed with a distance from the outer surface of the sealing layer 13. More specifically, the rear side surface of the front first dam portion 5 A is disposed to face the front side of the front side surface of the sealing layer 13 with a gap. The front side surface of the first dam portion 5A on the rear side is disposed to face the rear side of the rear side surface of the sealing layer 13 with a space therebetween. The left side surface of the right second dam part 5B is disposed to face the right side of the right side surface of the sealing layer 13 with an interval. The right side surface of the second dam part 5B on the left side is disposed opposite to the left side of the left side surface of the sealing layer 13 with an interval.

As shown in FIGS. 4B and 5, the distance L1 between the inner surface of the dam 5 and the outer surface of the sealing layer 13 is, for example, more than 0 mm, preferably 1 mm or more, and for example, 10 mm or less. Preferably, it is 5 mm or less.

Further, as shown in FIG. 5, the dam 5 is disposed on the same plane as the sealing layer 13 (that is, the upper surface of the first release layer 12).

<5. Element member arrangement process>
(Preparation of element members)
In the element member arranging step, as shown in FIG. 3, first, the element member 15 is prepared.

The element member 15 includes a second release layer 17 as a base material and an optical semiconductor element 16 disposed on the surface (lower surface) of the second release layer 17.

The second release layer 17 covers and seals the optical semiconductor element 16 with the sealing layer 13 until the sealing layer-covered optical semiconductor element 10 is obtained, and then the sealing layer-covered optical semiconductor element 10 is peeled off. In order to protect the optical semiconductor element 16 (see FIG. 2E) of the sealing layer-covered optical semiconductor element 10, the exposed surface of the optical semiconductor element 16 in the sealing layer-covered optical semiconductor element 10 (the lower surface in FIG. 2E) is protected. It is stuck so that it can be peeled off. That is, the second release layer 17 supports the optical semiconductor element 16 and covers the exposed surface of the optical semiconductor element 16 (the lower surface in FIG. 2E) when the sealing layer-covered optical semiconductor element 10 is shipped, transported, and stored. As described above, the sealing layer-covered optical semiconductor element 10 can be peeled off as shown by the phantom line in FIG. 2E immediately before the optical semiconductor element 16 is stacked on the exposed surface of the optical semiconductor element 16 and mounted on the substrate 20. It is a flexible film. That is, the 2nd peeling layer 17 consists only of a flexible film.

The second release layer 17 is made of the same material as the first release layer 12 described above. Moreover, the 2nd peeling layer 17 can also be formed from the heat peeling sheet from which the sealing layer covering optical semiconductor element 10 can peel easily by heating.

3, the second release layer 17 is formed in a substantially rectangular plate shape in plan view including a plurality (two) of spacers 4 when projected in the vertical direction. Specifically, as shown in FIG. 5, the area of the second release layer 17 is set to be larger than the area S 2 of the first release layer 12, for example.

As shown in FIG. 3, a plurality (nine) of optical semiconductor elements 16 are placed at the center of the surface (lower surface) of the second release layer 17. The plurality of optical semiconductor elements 16 are aligned in the left-right direction and spaced apart in the front-rear direction. Each of the plurality of optical semiconductor elements 16 is formed in a substantially flat plate shape along the front-rear direction and the left-right direction. Each of the plurality of optical semiconductor elements 16 has a substantially rectangular shape in plan view, and a cross-sectional shape along the vertical direction and the front-rear direction and a cross-sectional shape along the vertical direction and the left-right direction are formed in a substantially rectangular shape. Yes.

The front-rear direction length and the left-right direction length of the optical semiconductor element 16 are, for example, 50 μm or more, preferably 500 μm or more, and, for example, 2000 μm or less, preferably 1000 μm or less.

The thickness (length in the vertical direction) of each optical semiconductor element 16 is, for example, 0.1 μm or more, preferably 0.2 μm or more, and, for example, 500 μm or less, preferably 200 μm or less.

The volume (total volume) of the plurality of optical semiconductor elements 16 is, for example, 1 mm ³ or more, preferably 10 mm ³ or more, and for example, 5000 mm ³ or less, preferably 3000 mm ³ or less.

Then, as shown in FIG. 4A, the region where the optical semiconductor element 16 is arranged in the central portion of the second release layer 17 is partitioned as an element arrangement region 18 (see a virtual line). Specifically, the element arrangement region 18 is a region surrounded by a line segment connecting the outer edges of the optical semiconductor elements 16 arranged on the outermost side among the plurality of optical semiconductor elements 16. Specifically, the element arrangement region 18 has a line segment A connecting a plurality of front end edges (specifically, a front left end edge and a front right end edge) of the optical semiconductor element 16A arranged on the foremost side, and on the rear side. A line segment B connecting a plurality of rear end edges (specifically, a rear left end edge and a rear right end edge) of the optical semiconductor element 16B to be disposed, and a plurality of left end edges of the optical semiconductor element 16C disposed on the leftmost side ( Specifically, a line segment C connecting the front left end edge and the rear left end edge) and a plurality of right end edges (specifically, the front right end edge and the rear right end edge) of the optical semiconductor element 16D disposed on the rightmost side This is a bottom-view rectangular region surrounded by the connecting line segment D.

The area S3 of the element arrangement region 18 described above is appropriately set depending on the number, size, arrangement, and the like of the optical semiconductor element 16, and is smaller than the area S1 of the sealing layer 13 as shown in FIG. <S1). In other words, the area S1 of the sealing layer 13 is larger than the area S3 of the element arrangement region 18 (S1> S3), and exceeds, for example, 100% of the area S3 of the element arrangement region 18, preferably 105% or more, more preferably 110% or more, and for example, 150% or less.

(Arrangement of element members)
Next, as shown in FIGS. 1A and 3, the prepared element member 15 is arranged on the upper side of the sealing member 11.

Specifically, the second release layer 17 of the element member 15 is disposed on the lower surface of the carrier 32.

The carrier 32 is a support plate for positioning the element member 15 below the upper mold 3 while supporting the second release layer 17. The carrier 32 is formed in a substantially flat plate shape extending in the front-rear direction and the left-right direction. The carrier 32 is formed in a shape and size that are included in the upper mold 3 and include the second release layer 17 when projected in the vertical direction. Further, the carrier 32 is formed in a shape and size overlapping with the spacer 4 as shown in FIG. 1A when projected in the vertical direction. The thickness of the carrier 32 is, for example, 50 μm or more, preferably 300 μm or more, and for example, 2000 μm or less, preferably 1000 μm or less. The carrier 32 is made of, for example, glass, ceramic, stainless steel, or the like.

The carrier 32 is disposed on the lower surface of the upper mold 3 such that the optical semiconductor element 16 of the element member 15 disposed on the lower surface thereof faces downward.

By disposing the element member 15 on the lower surface of the carrier 32, the element member 15 is disposed above the sealing member 11, the spacer 4, and the dam 5 as shown in FIG. 1A.

Specifically, the element member 15 is disposed on the upper side of the spacer 4 with an interval so that both ends of the second peeling layer 17 in the left-right direction overlap the spacer 4 when projected in the vertical direction. The In addition, the element member 15 is disposed on the upper side of the dam 5 with an interval therebetween so that the peripheral end portion of the second release layer 17 and the dam 5 overlap when projected in the vertical direction. Further, as shown in FIG. 5, the element member 15 is located above the sealing member 11 so that the optical semiconductor element 16 (element arrangement region 18) and the sealing layer 13 overlap when projected in the vertical direction. Are opposed to each other with a gap therebetween. The element arrangement region 18 is included in the sealing layer 13 when projected in the vertical direction.

<6. Coating process>
The covering step is performed after the spacer arranging step, the sealing member arranging step, the dam arranging step, and the element member arranging step.

In the covering step, first, the upper mold 3 is disposed opposite to the upper side of the lower mold 2.

In order to arrange the upper mold 3, first, as shown in FIG. 3, the lower ends of the plural (four) springs 22 are inserted into the first recesses 23. Subsequently, the upper end of the spring 22 is accommodated in the second recess 25 of the upper mold 3.

Thus, the upper mold 3 is arranged opposite to the upper side of the lower mold 2. The sealing member 11 and the dam 5 are disposed between the lower mold 2 and the upper mold 3. The element member 15 is disposed between the lower mold 2 and the upper mold 3 and on the upper mold 3 side with respect to the sealing member 11 and the dam 5.

Subsequently, as shown in FIG. 1A, the lower mold 2 and the upper mold 3 are heated by the heater 7. When the sealing layer 13 contains a thermosetting resin having thermoplasticity and thermosetting property, the temperature of the lower mold 2 and the upper mold 3 is equal to or higher than the thermoplastic temperature of the thermosetting resin. Preferably, from the viewpoint of carrying out the thermoplastic and thermosetting of the thermosetting resin at a time, it is a thermosetting temperature or higher, specifically, for example, 50 ° C. or higher, preferably 80 For example, it is 200 ° C. or lower, preferably 150 ° C. or lower.

Subsequently, as shown by the arrow in FIG. 1B, the lower mold 2 and the upper mold 3 are brought close to each other. Specifically, the upper mold 3 is pressed toward the lower mold 2 (pressed down, specifically, hot pressed). That is, the upper mold 3 is lowered. Then, the upper mold 3 is brought close to the lower mold 2 until the lower surfaces of both ends in the left-right direction of the carrier 32 reach the press position where they contact the upper surface of the spacer 4.

As shown in FIG. 1B, when the upper mold 3 is located at the press position, that is, the lower surface of both end portions of the second peeling layer 17 and the upper surface of the spacer 4 come into contact (contact). When the upper mold 3 is located at the press position, the sealing layer 13 is filled in a space defined by the dam 5, the first release layer 12, and the second release layer 17, and as shown in FIG. 2D. And a thickness T6.

The thickness T6 of the sealing layer 13 is adjusted to be substantially the same as the design thickness T0 or within a predetermined tolerance range (described later) with respect to the design thickness T0.

As shown in FIG. 1B, the design thickness T0 of the sealing layer 13 is a thickness obtained by subtracting the thickness T2 of the release layer 12 from the thickness T1 of the spacer 4 (T0 = T1-T2)). In other words, the thickness T1 of the spacer 4 is set as the total thickness of the thickness T2 of the release layer 12 and the design thickness T0 of the sealing layer 13 (T1 = T2 + T0).

Moreover, the design thickness T0 of the sealing layer 13 is thinner than the thickness T4 (see FIG. 5) of the sealing layer 13 before sealing (T0 <T4). In other words, the thickness T4 (see FIG. 5) of the sealing layer 13 is thicker than the design thickness T0 of the sealing layer 13 (T4> T0). The thickness T4 (see FIG. 5) of the sealing layer 13 is, for example, more than 100%, preferably 105% or more with respect to the design thickness T0 of the sealing layer 13, and for example, 150% or less, preferably Is 120% or less.

Furthermore, the design thickness T0 of the sealing layer 13 is formed thinner than the thickness T3 of the dam 5 before sealing (T0 <T3). In other words, the thickness T3 of the dam 5 before sealing is thicker than the designed thickness T0 of the sealing layer 13 (T3> T0). Specifically, the thickness T3 of the dam 5 before sealing exceeds, for example, 100%, preferably 105% or more with respect to the design thickness T0 of the sealing layer 13, and for example, 120 % Or less, more preferably 110% or less.

When the upper mold 3 is located at the press position, the sealing layer is accommodated by subtracting the volume of the plurality of optical semiconductor elements 16 from the volume of the space defined by the dam 5, the first release layer 12, and the second release layer 17. The volume 19 is set smaller or the same as the volume of the sealing layer 13 before sealing shown in FIG. 1A. In other words, the volume of the sealing layer 13 before sealing shown in FIG. 1A is larger or the same as the sealing layer accommodation volume 19, specifically, for example, 100% or more, preferably 100%, more preferably 102% or more, still more preferably 105% or more, and for example, 120% or less, preferably 110%. If the volume ratio of the sealing layer 13 before sealing shown in FIG. 1A is not less than the above lower limit (or more than the above lower limit) and not more than the above upper limit, the thickness of the sealing layer 13 in the sealing layer-covered optical semiconductor element 10 T6 can be accurately set to the design thickness T0.

And the upper die 3 does not move down beyond the press position and stays at the press position. That is, the spacer 4 restricts the upper die 3 from descending beyond the press position. Further, the upper mold 3 continues to press the lower mold 2 at the press position.

The press pressure is, for example, 0.5 MPa or more, preferably 1 MPa or more, and for example, 1000 MPa or less, preferably 300 MPa or less.

Then, when the sealing layer 13 contains a thermosetting resin having thermoplasticity and thermosetting property due to the heating of the lower mold 2 and the upper mold 3 by the heater 7, the lower mold 2 and the upper mold The heat of the mold 3 is conducted to the sealing layer 13 and plasticized. Subsequently, the semiconductor element 16 is embedded in the plasticized sealing layer 13 by pressing the upper mold 3 against the lower mold 2.

Then, as compared with the state before the optical semiconductor element 16 is embedded, the sealing layer 13 in which the optical semiconductor element 16 is embedded has both the left and right side surfaces and the front and rear direction side surfaces on the outer side (the left and right direction and the front and rear direction). Thus, the left and right side surfaces and the front and rear side surfaces of the sealing layer 13 contact the inner surface of the dam 5 and press the dam 5 outward.

In the dam 5, the upper surface of the dam 5 is compressed to the lower surface of the upper die 3 by pressing the lower die 2 of the upper die 3. Therefore, the dam 5 is compressed in the vertical direction and is sandwiched between the first peeling layer 12 and the second peeling layer 17 and thus bulges in the left-right direction and the front-back direction.

Especially, the outer part of the dam 5 bulges outward in the left-right direction and outward in the front-rear direction. Specifically, as shown in FIG. 4B, the first dam part 5A on the front side is on the front side, the first dam part 5A on the rear side is on the rear side, the second dam part 5B on the right side is on the right side, and the left side The second dam portion 5B bulges to the left side.

On the other hand, in the inner part of the dam 5, the inner surface of the dam 5 is pressed outward by the sealing layer 13, and the dam 5 is compressed in the vertical direction by the upper mold 3. The expansion output substantially cancels. Therefore, the position (the position in the front-rear direction and the left-right direction) of the inner portion of the dam 5 does not substantially vary depending on before and after pressing.

In addition, as shown in FIG. 1B, a part of the sealing composition constituting the sealing layer 13 (upper part of the outer portion) reaches the upper surface of the dam 5. Specifically, a part of the sealing layer 13 is disposed between the dam 5 and the second release layer 17.

After that, the hot press by press 1 is continued.

The heating temperature is, for example, in the same range as the above temperature, and the pressing time is, for example, 3 minutes or more, preferably 5 minutes or more, and for example, 30 minutes or less, preferably 15 minutes or less. It is.

Thus, when the sealing layer 13 contains a thermosetting resin having plasticity and thermosetting property, it is thermoset (C stage).

(Product)
In the case where the sealing resin contains a phenyl silicone resin composition, the reaction of the phenyl silicone resin composition (C-staging reaction) contains an alkenyl group and / or cycloalkenyl group of the alkenyl group-containing polysiloxane and a hydrosilyl group. The hydrosilyl addition reaction with the hydrosilyl group of the polysiloxane is further accelerated. Thereafter, the alkenyl group and / or cycloalkenyl group or the hydrosilyl group of the hydrosilyl group-containing polysiloxane disappears, and the hydrosilyl addition reaction is completed, whereby the product of the C-stage phenyl-based silicone resin composition, A cured product is obtained. That is, by completing the hydrosilyl addition reaction, curability (specifically, thermosetting) is exhibited in the phenyl silicone resin composition.

The product described above is represented by the following average composition formula (3).

Average composition formula (3):
R ⁵ _e SiO _{(4-e) / 2}
(In the formula, R ⁵ represents an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms (excluding an alkenyl group and a cycloalkenyl group) including a phenyl group. .5 or more and 2.0 or less.)
The unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms represented by R ^{5 includes} an unsubstituted or substituted monovalent carbon group having 1 to 10 carbon atoms represented by R ² in the formula (1). Examples thereof are the same as the hydrogen group and the unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms represented by R ³ in the formula (2). Preferably, an unsubstituted monovalent hydrocarbon group, more preferably an alkyl group having 1 to 10 carbon atoms, and an aryl group having 6 to 10 carbon atoms, and more preferably a combined use of a phenyl group and a methyl group is used. Can be mentioned.

E is preferably 0.7 or more and 1.0 or less.

The proportion of the phenyl groups in R ⁵ in the average composition formula of the product (3) is, for example, 30 mol% or more, preferably is 35 mol% or more, and is, for example, 55 mol% or less, preferably 50 mol% or less.

When the content ratio of the phenyl group in R ⁵ of the average composition formula (3) of the product is less than the lower limit described above, the thermoplasticity of the B-stage sealing layer 13 (see FIG. 1A) can be ensured. That is, since the 80 ° C. shear storage modulus G ′ of the sealing layer 13 described later exceeds the desired range, the optical semiconductor element 16 may not be securely embedded and sealed.

On the other hand, if the content ratio of the phenyl group in R ⁵ of the average composition formula (3) of the product is equal to or less than the above-described upper limit, a decrease in flexibility of the sealing layer 13 (see FIG. 1A) of the C stage is prevented. be able to.

The content ratio of the phenyl group in R ⁵ of the average composition formula (3) of the product is a monovalent hydrocarbon group directly bonded to the silicon atom of the product (indicated by R ⁵ in the average composition formula (3)). This is the phenyl group concentration.

The content ratio of the phenyl group in R ⁵ of the average composition formula (3) of the product is calculated by ¹ H-NMR and ²⁹ Si-NMR. Details of the calculation method of the content ratio of the phenyl group in R ⁵ are described in Examples described later, and are calculated by ¹ H-NMR and ²⁹ Si-NMR, for example, based on the description of WO2011 / 125463 and the like. .

As shown in FIG. 1B, the plurality of optical semiconductor elements 16, the sealing layer 13 covering and embedding them, and the upper surface of the optical semiconductor element 16 and the upper surface of the sealing layer 13 are covered by the above-described hot pressing. A dam / release layer-attached seal comprising a second release layer 17, a first release layer 12 covering the lower surface of the sealing layer 13 (excluding the side surface of the bulging portion 14), and a dam 5 surrounding the sealing layer 13. A stop layer coated optical semiconductor element 60 is obtained.

The sealing layer-covered optical semiconductor element 60 with a dam / peeling layer is a part for producing the sealing layer-covered optical semiconductor element 10 and the optical semiconductor device 30, and is a device that circulates by itself and can be used industrially. is there.

After that, the press on the lower mold 2 of the upper mold 3 is released. That is, the upper mold 3 and the carrier 32 are moved away from the lower mold 2. That is, the upper mold 3 is moved upward. At this time, as shown in FIG. 1C, the second concave portion 25 of the upper mold 3 is detached from the upper end portion of the spring 22.

At the same time, the sealing layer-covered optical semiconductor element 60 with a dam / release layer follows the carrier 32 and the upper mold 3. That is, the sealing layer-covered optical semiconductor element 60 with a dam / release layer is pulled up. Specifically, in the state where the second release layer 17 in the sealing layer-covered optical semiconductor element 60 with a dam / release layer is supported (contacted) with the carrier 32, the sealing layer-covered optical semiconductor element 60 with a dam / release layer. Are raised together with the upper mold 3 and the carrier 32.

Thereafter, as shown in FIGS. 1C and 2D, the sealing layer-covered optical semiconductor element 60 with a dam / release layer is peeled off from the carrier 32. Thereby, the sealing layer-covered optical semiconductor element 60 with a dam / release layer is taken out from the press 1. Thereafter, the sealing layer-covered optical semiconductor element 60 with a dam / release layer is turned upside down.

The sealing layer-covered optical semiconductor element 60 with a dam / peeling layer includes the sealing layer-covered optical semiconductor element 10 including the optical semiconductor element 16 and the sealing layer 13 that embeds and covers the optical semiconductor element 16. The sealing layer-covered optical semiconductor element 10 preferably includes only the optical semiconductor element 16 and the sealing layer 13.

The thickness T6 of the sealing layer 13 in the sealing layer-covered optical semiconductor element 60 with the dam / release layer (sealing layer-covered optical semiconductor element 10) is the upper surface of the sealing layer 13 and the optical semiconductor element 16 in FIG. The length in the vertical direction between the lower surface of the sealing layer 13 positioned on the side and substantially the same as the design thickness T0 (see FIG. 1B) of the sealing layer 13, for example, as shown in FIG. 1B Thus, the thickness is obtained by subtracting the thickness T2 of the first release layer 12 from the thickness T1 of the spacer 4 (T6 = T1-T2).

The thickness T6 of the sealing layer 13 in the sealing layer-covered optical semiconductor element 60 with the dam / peeling layer is thinner than the thickness T4 (see FIG. 5) of the sealing layer 13 before covering the optical semiconductor element 16 (see FIG. 5). In other words, T6 <T4), specifically, for example, less than 100%, preferably 95% or less, more preferably 90%, with respect to the thickness T4 of the sealing layer 13 before covering the optical semiconductor element 16. % Or less, for example, 60% or more, preferably 70% or more. Specifically, the thickness T6 of the sealing layer 13 in the dam / release layer-containing sealing layer-covered optical semiconductor element 60 is, for example, 50 μm or more, preferably 100 μm or more, and for example, 1500 μm or less, preferably 800 μm or less.

2D, the thickness T7 of the dam 5 (the thickness T7 of the dam 5 after sealing) in the sealing layer-covered optical semiconductor element 60 with the dam / peeling layer is the thickness T3 of the dam 5 before sealing. (Refer to FIG. 5), it is thin or formed with the same thickness (that is, T7 ≦ T3), for example, 100% or less, preferably less than 100%, more preferably 98% or less, and still more preferably 95 % Or less, for example, 80% or more. Specifically, the thickness T7 of the dam 5 in the dam / separation layer-coated optical semiconductor element 60 with a release layer is, for example, 100 μm or more, preferably 300 μm or more, and, for example, 1500 μm or less, preferably 1000 μm. It is as follows.

As shown in FIG. 2D, in the sealing layer-covered optical semiconductor element 60 with a dam / release layer, the sealing layer 13 is disposed in the vicinity of the optical semiconductor element 16 and serves to seal (cover) the optical semiconductor element 16. A sealing portion 33 to be formed, and a bulging portion 14 which is formed in a thin film from the sealing portion 33 outside the sealing portion 33 and is disposed on the lower surface of the dam 5 and does not serve for sealing (covering) the optical semiconductor element 16. And integrated. The bulging portion 14 is removed together with the dam 5 in the subsequent cutting step and is not included in the sealing layer-covered optical semiconductor element 10, while the sealing portion 33 is included in the sealing layer-covered optical semiconductor element 10. It is.

Thereafter, as shown by an arrow in FIG. 2D, the first release layer 12 is peeled off from the sealing layer 13 and the dam 5 so as to be bent in a substantially U shape.

Subsequently, as shown by the thick dashed line in FIG. 2E, the sealing layer 13 corresponding to each optical semiconductor element 16 is cut along the front-rear direction and the left-right direction (cutting step). That is, the plurality of optical semiconductor elements 16 are singulated. Further, the sealing layer 13 is cut so that the bulging portion 14 is removed together with the dam 5. Thus, the sealing layer-covered optical semiconductor element 10 including one optical semiconductor element 16 and the sealing layer 13 that embeds and covers the optical semiconductor element 16 is obtained in a state of being supported by the second release layer 17. . The sealing layer-covered optical semiconductor element 10 does not include the second release layer 17 and the substrate 20, and preferably includes only the optical semiconductor element 16 and the sealing layer 13.

<Method for Manufacturing Optical Semiconductor Device>
Next, a method for manufacturing the optical semiconductor device 30 using the sealing layer-covered optical semiconductor element 10 will be described.

This method includes a step of preparing the above-described sealing layer-covered optical semiconductor element 10 (see FIG. 2E), a peeling step of peeling the sealing layer-covered optical semiconductor element 10 from the second release layer 17 (see the arrow in FIG. 2E), And the mounting process (refer FIG. 2F) which mounts the optical semiconductor element 16 of the peeling sealing layer covering optical semiconductor element 10 on the board | substrate 20 is provided.

<7. Peeling process>
As shown by the arrow in FIG. 2E, in the peeling step, the sealing layer-covered optical semiconductor element 10 obtained by the above-described manufacturing method is peeled from the second peeling layer 17. Specifically, the sealing layer-covered optical semiconductor element 10 is pulled upward.

Thereby, a plurality of sealing layer-covered optical semiconductor elements 10 are obtained.

Subsequently, the plurality of sealing layer-covered optical semiconductor elements 10 are sorted according to the emission wavelength and the emission efficiency.

<8. Mounting process>
In the mounting process, first, a substrate 20 having terminals (not shown) provided on the upper surface is prepared.

As shown in FIG. 2F, the substrate 20 has a substantially rectangular plate shape extending in the front-rear direction and the left-right direction, and is, for example, an insulating substrate. Moreover, the board | substrate 20 is equipped with the terminal (not shown) arrange | positioned on the upper surface.

Next, in the mounting process, the selected sealing layer-covered optical semiconductor element 10 is mounted on the substrate 20.

In order to mount the sealing layer-covered optical semiconductor element 10 on the substrate 20, a terminal (not shown) of the optical semiconductor element 16 in the sealing layer-covered optical semiconductor element 10 is brought into contact with a terminal (not shown) of the substrate 20. And make an electrical connection. That is, the optical semiconductor element 16 of the sealing layer-covered optical semiconductor element 10 is flip-chip mounted on the substrate 20.

Thereby, the optical semiconductor device 30 including the substrate 20 and the sealing layer-covered optical semiconductor element 10 mounted on the substrate 20 is obtained. Preferably, the optical semiconductor device 30 includes only the substrate 20 and the sealing layer-covered optical semiconductor element 10. That is, the optical semiconductor device 30 preferably includes only the substrate 20, the optical semiconductor element 16, and the sealing layer 13.

(Function and effect)
And according to the manufacturing method of this sealing layer covering optical semiconductor element 10, since the press 1 provided with the flat lower mold 2 and the flat upper mold 3 is prepared, the structure of the press 1 is simplified. The plurality of optical semiconductor elements 16 can be covered with the sealing layer 13.

Further, according to the method for manufacturing the sealing layer-covered optical semiconductor element 10, the dam 5 is disposed so as to surround the sealing layer 13, and the upper mold 3 is brought close to the lower mold 2. Therefore, in the press with respect to the lower mold 2 of the upper mold 3, it is possible to suppress the sealing layer 13 from leaking in the front-rear direction and the left-right direction.

Furthermore, according to the manufacturing method of this sealing layer covering optical semiconductor element 10, since the spacer 4 is arrange | positioned in the press 1, when the upper metal mold | die 3 is located in a press position, design thickness T0 ( The lowering of the upper die 3 beyond the press position corresponding to FIG. 1B) can be regulated. Therefore, the thickness T6 (see FIG. 2D) of the sealing layer 13 can be accurately adjusted to the design thickness T0.

Further, according to the method for manufacturing the sealing layer-covered optical semiconductor element 10, the volume ratio of the sealing layer 13 is specified with respect to the sealing layer accommodation volume 19 when the upper mold 3 is located at the press position. Since it exists in the range, the sealing layer 13 which is excellent in dimensional accuracy can be obtained.

Moreover, according to the manufacturing method of this sealing layer covering optical semiconductor element 10, in the dam arrangement | positioning process which arrange | positions the dam 5, the thickness T3 of the dam 5 is in the said range with respect to the design thickness T0 of the sealing layer 13. If so, it is possible to suppress the sealing layer 13 from leaking outside the dam 5 while reliably compressing the dam 5 in the vertical direction.

Moreover, according to the manufacturing method of this sealing layer covering optical semiconductor element 10, if the tensile elastic modulus in 23 degreeC of a dam member is in the said range, while the handling property of the dam 5 can be ensured favorable, While pressing together with the sealing layer 13, the sealing layer 13 can be prevented from leaking outside the dam 5.

Further, according to the method for manufacturing the sealing layer-covered optical semiconductor element 10, if the dam 5 contains a resin, the flexible dam 5 can be easily formed. Therefore, the dam 5 can reliably suppress the sealing layer 13 from leaking outside the dam 5. Therefore, the contamination with respect to the press 1 by the sealing composition of the sealing layer 13 can be suppressed effectively.

Moreover, according to the manufacturing method of this sealing layer covering optical semiconductor element 10, if resin is silicone resin and / or urethane resin, it will suppress reliably that the sealing layer 13 leaks outside the dam 5. FIG. Can do.

Moreover, according to the manufacturing method of this sealing layer covering optical semiconductor element 10, in the dam arrangement | positioning process which arrange | positions the dam 5 shown to FIG. 1A, since the dam 5 is mounted in the peripheral edge part of the 1st peeling layer 12, As shown in FIG. 1B, in the covering step of pressing the upper mold 3 against the lower mold 2 and covering the plurality of optical semiconductor elements 16 with the sealing layer 13, on the upper surface of the first release layer 12. The outer shape of the sealing layer 13 can be formed corresponding to the dam 5.

Moreover, according to the manufacturing method of this sealing layer covering optical semiconductor element 10, if the sealing layer 13 of B stage has both thermoplasticity and thermosetting property, as shown to FIG. In the covering step of covering the element 16 with the sealing layer 13, the sealing layer 13 is heated and plasticized, and the plurality of optical semiconductor elements 16 are surely covered and sealed with the sealing layer 13. The plasticized sealing layer 13 can be thermoset to improve the reliability of the plurality of optical semiconductor elements 16.

Further, according to the manufacturing method of the sealing layer covered optical semiconductor element 10, the sealing layer 13, a phenyl group in R ⁵ in the average composition formula of the product obtained by reacting a silicone resin composition (3) If the content ratio is within a specific range, the plurality of optical semiconductor elements 16 can be reliably embedded, covered and sealed.

Further, in this method of manufacturing the sealing layer-covered optical semiconductor element 10, if the sealing layer 13 contains a phosphor, the light emitted from the plurality of optical semiconductor elements 16 is excellent in dimensional accuracy, and the phosphor. Since the wavelength can be converted by the sealing layer 13 containing, the sealing layer-coated optical semiconductor element 10 having excellent color uniformity can be obtained.

In addition, according to the method for manufacturing the optical semiconductor device 30 described above, as shown in FIG. 2D, the optical semiconductor device 30 including the sealing layer 13 having excellent dimensional accuracy is prepared, so that the light emitting characteristics and durability are excellent. The optical semiconductor device 30 can be obtained.

(Modification)
In the modification, members and processes similar to those in the above-described embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

In the above-described embodiment, as shown by the arrow in FIG. 1B, the upper mold 3 is pressed toward the lower mold 2. For example, although not shown, the lower mold 2 is turned into the upper mold 3. You can also press it. That is, the lower mold 2 is pushed up.

Alternatively, the lower mold 2 and the upper mold 3 can be moved together. That is, the upper mold 3 is pushed down while the lower mold 2 is pushed up.

In the above-described embodiment, <4. Dam placement step> and <5. The element member arranging step> is sequentially performed, but the order is not particularly limited, and <5. Element member arranging step> and <4. Dam placement step> or <4. Dam placement step> and <5. The element member arranging step> can be performed simultaneously.

In the above-described embodiment, as shown in FIG. 1A, the spacer 4 as an example of the restricting member is disposed between the lower mold 2 and the upper mold 3, but instead of the spacer 4, the upper mold A stopper that restricts the descent exceeding the press position of 3 can be integrally arranged with the press 1 on the side or upper side of the press 1.

In the above-described embodiment, the spring 22 is used as shown in FIG. 1A. However, the present invention is not limited to this, and although not shown, for example, an elastic body such as a sponge can be used instead of the spring 22. .

In the above-described embodiment, as shown in FIGS. 4B and 5, in the sealing member arranging step and the dam arranging step, the inner surface of the dam 5 is arranged with a distance from the outer surface of the sealing layer 13. However, they can also be brought into contact with each other as shown in FIG.

As shown in FIG. 6, the outer shape of the sealing layer 13 is the same as the shape of the opening 8.

This modification can also provide the same operational effects as the above-described embodiment.

Preferably, as shown in FIGS. 4B and 5, in the sealing member arranging step and the dam arranging step, the inner surface of the dam 5 is arranged with a space from the outer surface of the sealing layer 13. That is, the area S 1 of the sealing layer 13 is smaller than the opening cross-sectional area S 8 of the opening 8. Therefore, the dam 5 having the opening cross-sectional area S 8 that is larger than the area S 1 of the sealing layer 13 can be easily and reliably disposed so as to surround the sealing layer 13. Specifically, the dam 5 and the sealing layer 13 can be prevented from overlapping in the vertical direction. Therefore, the dam 5 can reliably surround the sealing layer 13 in the front-rear direction and the left-right direction, that is, the dam 5 and the sealing layer 13 can be easily and reliably disposed relative to each other.

In the above-described embodiment, the bulging portion 14 is formed as shown in FIG. 1B. For example, the sealing layer 13 is formed without forming the bulging portion 14 as shown in FIG. You can also

In that case, when the upper mold 3 is positioned at the press position, the sealing layer accommodation volume 19 obtained by subtracting the volumes of the plurality of optical semiconductor elements 16 from the sealing layer accommodation volume 19 and the sealing before sealing The volume of the layer 13 is the same.

Preferably, as shown in FIG. 1B, the bulging portion 14 is formed. In order to form the bulging portion 14, when the upper mold 3 is located at the press position, the sealing layer accommodation volume 19 obtained by subtracting the volumes of the plurality of optical semiconductor elements 16 from the sealing layer accommodation volume 19 is sealed. It is set smaller than the volume of the sealing layer 13 before stopping. If it does so, the sealing layer 13 which is excellent in the dimension, specifically the accuracy of thickness T6, can be obtained. That is, the thickness T6 of the sealing layer 13 can be adjusted with an accuracy (tolerance) of, for example, 95% or more and 105% or less with respect to the design thickness T0.

Furthermore, since the sealing layer 13 can form the bulging part 14 as shown in FIG. 1B, the sealing layer 13 with excellent accuracy of the thickness T6 can be obtained even if the tolerance described above is greatly allowed. be able to.

In the above-described embodiment, as shown in FIG. 5, the area S1 of the sealing layer 13 is formed larger than the area S3 of the element arrangement region 18 (S1> S3). As shown in FIG. 3, the area S1 of the sealing layer 13 can be made smaller or the same size as the area S3 of the element arrangement region 18 (S1 ≦ S3).

Preferably, as shown in FIG. 5, the area S1 of the sealing layer 13 is formed larger than the area S3 of the element arrangement region 18 (S1> S3). By doing so, the accuracy of the thickness T6 of the sealing layer 13 is improved while reliably covering the plurality of optical semiconductor elements 16 with the sealing layer 13 having an area S1 larger than the area S3 of the element arrangement region 18. be able to.

In the above-described embodiment, as shown in FIGS. 1A to 2F, the second release layer 17 is described as an example of the base material in the method for manufacturing an optical semiconductor device of the present invention. As shown in FIGS. 9A to 9D, the optical semiconductor device 30 may be manufactured without using the second peeling layer 17 as the substrate 20 and performing the peeling process using the second peeling layer 17 (see FIG. 2E). it can.

In the manufacturing method of the optical semiconductor device 30 of this embodiment, as shown in FIG. 9A, in the element member arranging step, first, a mounting substrate 29 including the optical semiconductor element 16 and the substrate 20 on which the optical semiconductor element 16 is mounted. Prepare. The optical semiconductor element 16 is flip-chip mounted on the lower surface of the substrate 20 or connected by wire bonding.

Thereafter, as shown in FIG. 9A, the mounting substrate 29 is disposed opposite to the upper side of the sealing member 11 and the dam 5. Specifically, the mounting substrate 29 is disposed on the lower surface of the carrier 32 so that the optical semiconductor element 16 faces downward.

Subsequently, as shown in FIG. 9B, a covering process is performed, and the optical semiconductor element 16, the substrate 20 on which the optical semiconductor element 16 is mounted, the sealing layer 13 for sealing the optical semiconductor element 16, and the sealing An optical semiconductor device 50 with a dam / peeling layer including the first peeling layer 12 disposed on the surface (lower surface and side surfaces) of the stopper layer 13 and the dam 5 surrounding the sealing layer 13 is obtained. Thereafter, as shown in FIG. 9C, the optical semiconductor device 50 with a dam / release layer is pulled up from the lower mold 2.

Thereafter, as shown by an arrow in FIG. 9D, in the optical semiconductor device 50 with a dam / release layer, the first release layer 12 is peeled from the sealing layer 13.

9D, the sealing layer 13 and the substrate 20 corresponding to each optical semiconductor element 16 are cut along the front-rear direction and the left-right direction so that the plurality of optical semiconductor elements 16 are separated into pieces. Turn into. As a result, the dam 5, the bulging portion 14 and the substrate 20 corresponding to the dam 5 are removed.

Thus, an optical semiconductor device 30 including one optical semiconductor element 16, a substrate 20 on which the optical semiconductor element 16 is mounted, and a sealing layer 13 (sealing portion 33) that seals the optical semiconductor element 16 is obtained. It is done. Preferably, the optical semiconductor device 30 includes only the optical semiconductor element 16, the substrate 20, and the sealing layer 13.

Also by the method shown in FIGS. 9A to 9D, the same operational effects as those of the above-described embodiment can be obtained. Furthermore, since the second release layer 17 is not used, the optical semiconductor device 30 can be easily obtained accordingly.

Further, in the above-described embodiment, as shown in FIG. 2E, after the sealing layer 13 in the sealing layer-covered optical semiconductor element 10 is cut and the optical semiconductor element 16 is separated into pieces, as shown in FIG. 2F. Further, the sealing layer-covered optical semiconductor element 10 is mounted on the substrate 20. However, although not illustrated, the sealing layer-covered optical semiconductor element 10 including the plurality of optical semiconductor elements 16 is not cut on the substrate 20 without cutting the sealing layer 13, that is, without separating the optical semiconductor elements 16 into individual pieces. It can also be implemented. In that case, first, the sealing layer-covered optical semiconductor element 10 provided with the second peeling layer 17 is mounted on the substrate 20, and then the second peeling layer 17 is peeled from the sealing layer 13. Alternatively, first, after the second release layer 17 is peeled from the sealing layer 13, the sealing layer-covered optical semiconductor element 10 including the sealing layer 13 from which the second release layer 17 is peeled can be mounted on the substrate 20. .

In the above-described embodiment, as shown in FIG. 1A, a plurality of optical semiconductor elements 16 are arranged on the second release layer 17, and then, as shown in FIG. It is sealed by. However, the present invention is not limited to this. For example, although not shown, a single optical semiconductor element 16 is disposed on the second release layer 17, and then the single optical semiconductor element 16 is sealed with the single sealing layer 13. You can also.

In that case, the element arrangement region 18 is a region in which the single optical semiconductor element 16 is arranged in the second release layer 17, and more specifically, the optical semiconductor element 16 may have a substantially rectangular shape in plan view. For example, it is a substantially rectangular region surrounded by the front edge, the rear edge, the right edge, and the left edge.

The numerical values in the following synthesis examples, preparation examples, preparation examples, and examples can be replaced with the numerical values (that is, the upper limit value or the lower limit value) described in the above embodiment.

Example 1 (corresponding to FIGS. 1A to 4)
<1. Preparation process>
As shown in FIGS. 1A and 3, a lower mold 2 and an upper mold 3 were prepared.

<2. Spacer placement process>
As shown in FIG. 5, two spacers 4 having a thickness T 1 of 650 μm were prepared, and they were arranged on the upper surface of the lower mold 2.

<3. Sealing member placement process>
A sealing member 11 including a first release layer 12 and a B-stage sealing layer 13 was prepared.

The method for preparing the sealing member 11 is described in the following synthesis examples, preparation examples, and production examples.

(Synthesis Example 1)
In a four-necked flask equipped with a stirrer, reflux condenser, charging port and thermometer, 93.2 g of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 140 g of water, trifluoromethanesulfone 0.38 g of acid and 500 g of toluene were added and mixed. While stirring, a mixture of 729.2 g of methylphenyldimethoxysilane and 330.5 g of phenyltrimethoxysilane was added dropwise over 1 hour, and then heated under reflux for 1 hour. Then, it cooled, the lower layer (water layer) was isolate | separated and removed, and the upper layer (toluene solution) was washed with water 3 times. 0.40 g of potassium hydroxide was added to the toluene solution washed with water, and the mixture was refluxed while removing water from the water separation tube. After completion of water removal, the mixture was further refluxed for 5 hours and cooled. Thereafter, 0.6 g of acetic acid was added for neutralization, and then the toluene solution obtained by filtration was washed with water three times. Then, liquid alkenyl group containing polysiloxane A was obtained by concentrating under reduced pressure. The average unit formula and average composition formula of the alkenyl group-containing polysiloxane A are as follows.

Average unit formula:
((CH ₂ = CH) (CH ₃ ) ₂ SiO _1/2 ) _0.15 (CH ₃ C ₆ H ₅ SiO _2/2 ) _0.60 (C ₆ H ₅ SiO _3/2 ) _0.25
Average composition formula:
(CH ₂ = CH) _0.15 (CH ₃ ) _0.90 (C ₆ H ₅ ) _0.85 SiO _1.05
That is, the alkenyl group-containing polysiloxane A is represented by the above average composition formula (1) in which R ¹ is a vinyl group, R ² is a methyl group and a phenyl group, and a = 0.15 and b = 1.75. .

The weight average molecular weight in terms of polystyrene of the alkenyl group-containing polysiloxane A was measured by gel permeation chromatography and found to be 2300.

(Synthesis Example 2)
In a four-necked flask equipped with a stirrer, reflux condenser, charging port and thermometer, 93.2 g of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 140 g of water, trifluoromethanesulfone 0.38 g of acid and 500 g of toluene were added and mixed. While stirring, a mixture of 173.4 g of diphenyldimethoxysilane and 300.6 g of phenyltrimethoxysilane was added dropwise over 1 hour. After completion of the addition, the mixture was heated to reflux for 1 hour. Then, it cooled, the lower layer (water layer) was isolate | separated and removed, and the upper layer (toluene solution) was washed with water 3 times. 0.40 g of potassium hydroxide was added to the toluene solution washed with water, and the mixture was refluxed while removing water from the water separation tube. After completion of water removal, the mixture was further refluxed for 5 hours and cooled. After neutralizing by adding 0.6 g of acetic acid, the toluene solution obtained by filtration was washed with water three times. Then, liquid alkenyl group containing polysiloxane B was obtained by concentrating under reduced pressure. The average unit formula and average composition formula of the alkenyl group-containing polysiloxane B are as follows.

Average unit formula:
(CH ₂ = CH (CH ₃ ) ₂ SiO _1/2 ) _0.31 ((C ₆ H ₅ ) ₂ SiO _2/2 ) _0.22 (C ₆ H ₅ SiO _3/2 ) _0.47
Average composition formula:
(CH ₂ = CH) _0.31 (CH ₃ ) _0.62 (C ₆ H ₅ ) _0.91 SiO _1.08
That is, the alkenyl group-containing polysiloxane B is represented by the above average composition formula (1) in which R ¹ is a vinyl group, R ² is a methyl group and a phenyl group, and a = 0.31 and b = 1.53. .

Further, the polystyrene equivalent weight average molecular weight of the alkenyl group-containing polysiloxane B was measured by gel permeation chromatography and found to be 1000.

(Synthesis Example 3)
Diphenyldimethoxysilane (325.9 g), phenyltrimethoxysilane (564.9 g), and trifluoromethanesulfonic acid (2.36 g) were added to a four-necked flask equipped with a stirrer, reflux condenser, inlet, and thermometer. Then, 134.3 g of 1,1,3,3-tetramethyldisiloxane was added, and 432 g of acetic acid was added dropwise over 30 minutes while stirring. After completion of dropping, the mixture was heated to 50 ° C. with stirring and reacted for 3 hours. After cooling to room temperature, toluene and water were added, mixed well and allowed to stand, and the lower layer (aqueous layer) was separated and removed. Thereafter, the upper layer (toluene solution) was washed with water three times and then concentrated under reduced pressure to obtain hydrosilyl group-containing polysiloxane C (crosslinking agent C).

The average unit formula and average composition formula of the hydrosilyl group-containing polysiloxane C are as follows.

Average unit formula:
(H (CH ₃ ) ₂ SiO _1/2 ) _0.33 ((C ₆ H ₅ ) ₂ SiO _2/2 ) _0.22 (C ₆ H ₅ PhSiO _3/2 ) _0.45
Average composition formula:
H _0.33 (CH ₃ ) _0.66 (C ₆ H ₅ ) _0.89 SiO _1.06
That is, the hydrosilyl group-containing polysiloxane C is represented by the above average composition formula (2) in which R ³ is a methyl group and a phenyl group, and c = 0.33 and d = 1.55.

Further, the polystyrene equivalent weight average molecular weight of the hydrosilyl group-containing polysiloxane C was measured by gel permeation chromatography and found to be 1000.

(Preparation Example 1)
20 g of alkenyl group-containing polysiloxane A (Synthesis Example 1), 25 g of alkenyl group-containing polysiloxane B (Synthesis Example 2), 25 g of hydrosilyl group-containing polysiloxane C (Synthesis Example 3, cross-linking agent C), and platinum carbonyl complex (product) The name “SIP6829.2” (manufactured by Gelest, platinum concentration 2.0 mass%) 5 mg was mixed to prepare a phenyl silicone resin composition A.

(Production Example 1)
Inorganic filler (refractive index 1.55, composition and composition ratio (mass%): SiO ₂ / Al ₂ O ₃ / CaO / MgO = 60/20/15 with respect to the phenyl silicone resin composition A of Preparation Example 1. / 5, average particle diameter: 15 μm (classified product)) was mixed so as to be 50% by mass with respect to the total amount thereof to prepare a varnish of the sealing composition. That is, in the sealing composition, the blending ratio of the phenyl-based silicone resin composition A is 50 mass%, and the blending ratio of the inorganic filler A is 50 mass%.

Next, with the applicator, the prepared varnish is exposed so that the peripheral edge of the first release layer 12 is exposed on the surface of the first release layer 12 (PTE sheet, softening temperature 70 ° C.) having a thickness T2 of 50 μm. It was applied in a rectangular shape in plan view. Thereafter, the phenyl-based silicone resin composition in the varnish was B-staged (semi-cured) by heating at 90 ° C. for 9.5 minutes. Thereby, the sealing layer 13 was manufactured.

As shown in FIG. 5, the thickness T4 of the sealing layer 13 was 630 μm, the area S1 of the sealing layer 13 was 400 mm ² , and the volume of the sealing layer 13 before sealing was 252 mm ³ .

Thereafter, the sealing member 11 was disposed on the upper surface of the lower mold 2.

<4. Dam placement process>
A varnish comprising a silicone resin composition was prepared. That is, a condensation reaction / addition reaction curable silicone resin described in Example 1 of JP 2010-265436 A was prepared. Specifically, both terminal silanol type polydimethylsiloxane, vinyltrimethoxysilane, (3-glycidoxypropyl) trimethoxysilane, tetramethylammonium hydroxide (condensation catalyst), dimethylpolysiloxane-CO A two-stage reaction-curable methyl silicone resin composition was prepared from methylhydrogensiloxane and platinum-1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (addition catalyst).

Next, with respect to 100 parts by mass of the two-stage reaction curable methyl silicone resin composition, an organic filler (trade name “Tospearl 2000B”, silicone particles, refractive index 1.42, average particle diameter 6.0 μm, momentary performance) (Made by Materials Japan) 30 parts by mass were mixed to prepare a varnish.

Next, the prepared varnish was applied to the surface of the release sheet, and then heated with a hot air dryer at 150 ° C. for 2 hours to prepare a sheet-like cured product. Thereafter, the cured product is externally processed into a frame shape to produce a dam 5, and then the produced dam 5 is disposed at the peripheral end portion of the upper surface of the first release layer 12 so as to surround the sealing layer 13. did. The thickness T3 of the dam 5 is 660 μm, the width of the dam 5 (the length in the front-rear direction of the first dam portion 5A and the length in the left-right direction of the second dam portion 5B) is 3 mm, and the opening cross-sectional area of the dam 5 is It was 400 mm ² . Further, the tensile elastic modulus of the dam 5 at 25 ° C. was 0.5 MPa, and the elongation at break was 500%.

<5. Element member arrangement process>
An element member 15 including a second release layer 17 (thermal release sheet) and nine optical semiconductor elements 16 disposed on the lower surface of the second release layer 17 was prepared. The thickness T5 of the second release layer 17 was 50 μm, and the total volume of the nine optical semiconductor elements 16 was 30 mm ³ .

Further, since [design thickness T0 of the sealing layer 13] = [thickness T1 of the spacer 4] − [thickness T2 of the first release layer 12], the design thickness T0 of the sealing layer 13 is 600 μm (650 μm ( T1) -50 μm (T2)).

Subsequently, the element member 15 was attached to the lower surface of the carrier 32 (glass plate). Thereafter, the element member 15 and the carrier 32 were disposed opposite to the upper side of the sealing member 11 and the dam 5.

<6. Coating process>
As shown in FIG. 1B, the upper mold 3 is positioned relative to the lower mold 2 by bringing the upper mold 3 into a pressing position by bringing the lower surfaces of both ends in the left-right direction of the carrier 32 into contact with the upper surface of the spacer 4. And hot pressed.

Specifically, as shown in FIG. 1B, the lower mold 2 and the upper mold 3 are heated at 90 ° C. by the heater 7 while pressing the upper mold 3 against the lower mold 2 at 3 MPa (2 kN). Heated for 10 minutes.

Thereafter, as shown in FIG. 1C, the upper mold 3 and the carrier 32 are pulled up from the press 1 to provide the first release layer 12, the second release layer 17, the optical semiconductor element 16, the sealing layer 13, and the dam 5. The sealing layer-covered optical semiconductor element 60 with a dam / release layer was pulled up from the lower mold 2 so as to follow the upper mold 3 and the carrier 32.

In the dam / separation layer-covered optical semiconductor element 60 with release layer, as shown in FIG. 2D, the thickness T7 of the dam 5 is 600 μm, and the width of the dam 5 (the length in the front-rear direction of the first dam portion 5A) The length of the second dam portion 5B in the left-right direction) was 3 mm, and the opening cross-sectional area of the dam 5 was 400 mm ² .

In the sealing layer-covered optical semiconductor element 60 with a dam / release layer, as shown in FIG. 2D, the sealing layer 13 had a thickness T6 of 600 μm and the sealing layer 13 had an area of 400 mm ² . In addition, the sealing layer accommodating volume 19 was 210 mm ³ ([sealing layer accommodating volume 19] − [total volume of nine optical semiconductor elements 16]).

<7. Peeling process>
Thereafter, the first release layer 12 was peeled off from the sealing layer 13 and the dam 5 as indicated by an arrow in FIG. 2D.

Subsequently, as shown by the thick chain lines in FIG. 2E, the sealing layer 13 corresponding to each optical semiconductor element 16 was cut to separate the plurality of optical semiconductor elements 16 into pieces. Thus, the sealing layer-covered optical semiconductor element 10 including the optical semiconductor element 16 and the sealing layer 13 was obtained while being supported by the second release layer 17.

<8. Mounting process>
Thereafter, the sealing layer-covered optical semiconductor element 10 is peeled off from the second release layer 17 as shown by the arrow in FIG. 2E, and then the peeled optical semiconductor element 16 is mounted on the substrate 20 as shown in FIG. 2F. did. Thereby, the optical semiconductor device 30 was obtained.

Examples 2 to 11 (corresponding to FIGS. 1A to 3)
The treatment was performed in the same manner as in Example 1 except that the formulation and dimensions of the dam 5 and the dimensions of the sealing layer 13 were changed according to Table 1.

In Examples 2 to 5 and 7 to 10, <4. In the dam arrangement process> dam 5 formulation, instead of the two-stage reaction curable methyl silicone resin composition, the one-stage reaction curable methyl silicone resin composition (trade name “ELASTOSIL LR7665”, addition reaction curing) Type silicone resin composition, thermosetting resin that cannot be in a B-stage state, manufactured by Asahi Kasei Wacker Silicone).

In Example 6, <4. In the formulation of dam 5 in the dam arrangement step>, a one-step reaction curable phenyl silicone resin composition was used instead of the two-step reaction curable methyl silicone resin composition. The one-step reaction-curable phenyl-based silicone resin composition is <3. The one-step reaction-curable phenyl silicone resin composition described in the sealing member arranging step> was used.

Example 11
The dam 5 was processed in the same manner as in Example 1 except that the dam 5 was formed only from an epoxy resin.

Specifically, using the product name “JER828” (epoxy resin, manufactured by Mitsubishi Chemical Corporation), a film was formed and cured to a target thickness by coating, and then punched into a frame shape by a cutting machine.

Example 12
The dam 5 was treated in the same manner as in Example 1 except that the dam 5 was formed only from urethane resin.

Specifically, the product name “polyurethane elastomer (TPU) sheet” (manufactured by Telmax Co., Ltd.) was used to punch into a frame shape with a cutting machine.

Example 13
The dam member was processed in the same manner as in Example 1 except that the dam member was formed only from the glass / epoxy substrate.

Specifically, the product name “FR-4” (glass / epoxy resin, manufactured by Panasonic Corporation) was punched into a frame shape with a cutting machine.

Example 14
The dam member was processed in the same manner as in Example 1 except that it was made of stainless steel.

Specifically, a stainless steel plate (model number SUS304) was punched into a frame shape with a cutting machine.

Comparative Example 1
The treatment was performed in the same manner as in Example 1 except that the dam 5 was not used.

(Evaluation)
[State of sealing of optical semiconductor element 16]
The sealing state of the optical semiconductor element 16 by the sealing layer 13 was observed, and the sealing state of the optical semiconductor element 16 was evaluated according to the following criteria.
A: The optical semiconductor element 16 is completely sealed with the sealing layer 13; A: The optical semiconductor element 16 is sealed with the sealing layer 13; * A: Dam 5 of the sealing composition due to slight damage of the dam 5 The optical semiconductor element 16 was sealed with the sealing layer 13 .DELTA. * B: Although an unfilled portion was scattered in the sealing layer accommodation volume 19, the optical semiconductor was removed with the sealing layer 13. Δ * C in which the element 16 is sealed: Although the sealing composition 13 leaks to the outside of the dam 5 due to insufficient adhesion at the interface between the dam 5 and the second release layer 17, the optical semiconductor is formed by the sealing layer 13. The element 16 could be sealed.
X: The optical semiconductor element 16 could not be sealed by the sealing layer 13.

[Variation in average thickness T6 and thickness T6 of sealing layer 13]
The average thickness T6 of the sealing layer 13 and the variation of T6 in the sealing layer-covered optical semiconductor element 40 with the release layer were calculated. In the table, R is an index of variation in the thickness of the sealing layer 13, and specifically indicates a value obtained by subtracting the minimum thickness of the sealing layer 13 from the maximum thickness of the sealing layer 13.

[Measurement of Phenyl Group Content in Hydrocarbon Group (R ⁵ ) of Product Obtained by Reaction of Phenyl Silicone Resin Composition A]
In the product obtained by the reaction of the phenyl-based silicone resin composition A (that is, the phenyl-based silicone resin composition A containing no filler), a hydrocarbon group directly bonded to a silicon atom (average composition formula (3)) The content (mol%) of the phenyl group in R ⁵ ) was calculated by ¹ H-NMR and ²⁹ Si-NMR.

Specifically, the A-stage phenyl-based silicone resin composition A was reacted (completely cured, C-staged) at 100 ° C. for 1 hour without adding a filler to obtain a product.

Next, by measuring ¹ H-NMR and ²⁹ Si-NMR of the obtained product, the proportion (mol%) of the phenyl group in the hydrocarbon group (R ⁵ ) directly bonded to the silicon atom was calculated. did.

As a result, it was 48%.

Although the above invention has been provided as an exemplary embodiment of the present invention, this is merely an example and should not be interpreted in a limited manner. Variations of the present invention that are apparent to one of ordinary skill in the art are within the scope of the following claims.

The manufacturing method of a sealing layer covering optical semiconductor element is used for the manufacturing method of an optical semiconductor device.

DESCRIPTION OF SYMBOLS 1 Press 2 Lower die 3 Upper die 4 Spacer 5 Dam 7 Heater 10 Sealing layer coating | cover optical semiconductor element 11 Sealing member 12 1st peeling layer 13 Sealing layer 15 Element member 16 Optical semiconductor element 17 2nd peeling layer 18 Element placement region 19 Sealing layer accommodation volume 20 Substrate 30 Optical semiconductor device S1 Sealing layer area S3 Element placement region area S8 Open sectional area T0 of dam (opening) Design thickness T3 of sealing layer Dam before sealing Thickness T4 thickness of the sealing layer before sealing

Claims

A method for producing a sealing layer-covered optical semiconductor element comprising: an optical semiconductor element; and a sealing layer that covers the optical semiconductor element,
Preparing a press comprising a flat plate-shaped first mold and a flat plate-shaped second mold for opposingly arranging the first mold;
Disposing a restricting member on the press for restricting movement of the first die and / or the second die in the pressing direction of the press exceeding a press position corresponding to a design thickness of the sealing layer;
A sealing member including a release layer and a B-stage sealing layer disposed on the surface of the release layer is provided between the first mold and the second mold, and the sealing layer is second. The process of arranging to go to the mold,
Arranging a weir member corresponding to the outer shape of the sealing layer so as to surround the sealing layer when projected in the pressing direction;
An element member comprising a base material and the optical semiconductor element disposed on the surface of the base material is between the first mold and the second mold, and the second mold with respect to the sealing member Arranging on the mold side such that the optical semiconductor element faces the first mold, and
The first die and / or the second die are brought close to each other, the first die and / or the second die are positioned at the press position, and the optical semiconductor element is covered with the sealing layer. The manufacturing method of the sealing layer coating | cover optical semiconductor element characterized by including a process.
The volume ratio of the sealing layer is a volume of a space defined by the weir member, the release layer, and the base material when the first mold and / or the second mold is located at the press position. 2. The method for producing an encapsulating layer-covered optical semiconductor element according to claim 1, wherein the encapsulating layer covering volume is obtained by subtracting the volume of the optical semiconductor element from 100% to 120%. .
The step of disposing the dam member, wherein the thickness of the dam member is more than 100% and 120% or less with respect to the design thickness of the sealing layer. Manufacturing method of a sealing layer covering optical semiconductor element.
The method for producing an encapsulating layer coated optical semiconductor element according to claim 1, wherein the weir member has a tensile elastic modulus at 23 ° C of 0.3 MPa or more and 1000 MPa or less.
The method for producing an encapsulating layer-covered optical semiconductor element according to claim 1, wherein the weir member contains a resin.
The method for producing an encapsulating layer coated optical semiconductor element according to claim 5, wherein the resin is a silicone resin and / or a urethane resin.
In the sealing member, a peripheral end portion of the release layer is exposed from the sealing layer,
2. The method for manufacturing an encapsulating layer-covered optical semiconductor element according to claim 1, wherein in the step of disposing the dam member, the dam member is placed on the peripheral end portion of the release layer.
In the step of disposing the dam member, an area of the sealing layer is smaller than a cross-sectional area along a direction orthogonal to the press direction of a space surrounded by the dam member. The manufacturing method of the sealing layer covering optical semiconductor element of description.
When the single optical semiconductor element is disposed on the base material, the area of the sealing layer is larger than the area of the region where the single optical semiconductor element is disposed on the base material,
When a plurality of the optical semiconductor elements are provided on the base material, an outer edge of the optical semiconductor element in which the area of the sealing layer is arranged on the outermost side among the plurality of optical semiconductor elements in the base material 2. The method for manufacturing an encapsulating layer-covered optical semiconductor element according to claim 1, wherein the area is larger than an area of a region surrounded by a line segment connecting the two.
The press comprises a heat source;
The sealing layer of the B stage has both thermoplasticity and thermosetting property,
The step of covering the optical semiconductor element with the sealing layer is characterized in that the sealing layer is heated and plasticized, and then the plasticized sealing layer is thermally cured. The manufacturing method of the sealing layer covering optical semiconductor element of description.
The sealing layer is
Contains an alkenyl group-containing polysiloxane containing two or more alkenyl groups and / or cycloalkenyl groups in the molecule, a hydrosilyl group-containing polysiloxane containing two or more hydrosilyl groups in the molecule, and a hydrosilylation catalyst Formed into a sheet from a sealing composition containing a phenyl-based silicone resin composition,
The alkenyl group-containing polysiloxane is represented by the following average composition formula (1):
Average composition formula (1):
R 1 a R 2 b SiO (4-ab) / 2
(In the formula, R 1 represents an alkenyl group having 2 to 10 carbon atoms and / or a cycloalkenyl group having 3 to 10 carbon atoms. R 2 represents an unsubstituted or substituted monovalent carbon atom having 1 to 10 carbon atoms. A hydrogen group (excluding an alkenyl group and a cycloalkenyl group); a is from 0.05 to 0.50, and b is from 0.80 to 1.80.
The hydrosilyl group-containing polysiloxane is represented by the following average composition formula (2):
Average composition formula (2):
H c R 3 d SiO (4-cd) / 2
(Wherein R 3 represents an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms (excluding an alkenyl group and / or a cycloalkenyl group), and c is 0.30 or more) 1.0, and d is 0.90 or more and 2.0 or less.)
In the average composition formula (1) and the average composition formula (2), at least one of R 2 and R 3 includes a phenyl group,
The product obtained by reacting the phenyl silicone resin composition is represented by the following average composition formula (3):
Average composition formula (3):
R 5 e SiO (4-e) / 2
(In the formula, R 5 represents an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms (excluding an alkenyl group and a cycloalkenyl group) including a phenyl group. .5 or more and 2.0 or less.)
2. The sealing layer-coated optical semiconductor element according to claim 1, wherein the content ratio of the phenyl group in R 5 of the average composition formula (3) is 30 mol% or more and 55 mol% or less. Method.
The method for manufacturing an encapsulating layer-covered optical semiconductor element according to claim 1, wherein the encapsulating layer contains a phosphor.
The method for producing a sealing layer-covered optical semiconductor element according to claim 1 comprises a step of preparing a sealing layer-covered optical semiconductor element disposed on the surface of a substrate,
The substrate is a second release layer;
After the step of preparing the sealing layer-covered optical semiconductor element, the step of peeling the sealing layer-covered optical semiconductor element from the second release layer; and
A method of manufacturing an optical semiconductor device, further comprising a step of mounting the optical semiconductor element of the peeled sealing layer-covered optical semiconductor element on a substrate.
The method for producing a sealing layer-covered optical semiconductor element according to claim 1 comprises a step of preparing a sealing layer-covered optical semiconductor element disposed on the surface of a substrate,
The method for manufacturing an optical semiconductor device, wherein the base material is a substrate on which the optical semiconductor element is mounted.