JP2017163104A - Optical semiconductor element with coating layer and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of an optical semiconductor element with a coating layer capable of suppressing breakage of the coating layer while ensuring excellent handling, and capable of adhering the coating layer reliably to the optical semiconductor element, and to provide an optical semiconductor element with a coating layer thus obtained.SOLUTION: A manufacturing method of an optical semiconductor element 15 with a coating layer includes the steps of: (1) installing an optical semiconductor element coating sheet 1 including a coating layer 3 formed of hot melt resin and capable of covering an optical semiconductor element 2, and a cushion layer 4 placed thereon, and the optical semiconductor element 2, on a press machine 10 so that the coating layer 3 faces the optical semiconductor element 2; (2) hot-pressing the optical semiconductor element coating sheet 1 and the optical semiconductor element 2 so as to be compressed by the press machine 10 following to the step (1); and (3) removing the cushion layer from the coating layer after the step (2). International rubber hardness of the cushion layer 4, measured at 25°C by means of a hardness meter based on a method conforming to JIS K 6253-2 (2012), is 10 or more 50 or less.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an optical semiconductor element with a coating layer and a method for producing the same, and more particularly to a method for producing an optical semiconductor element with a coating layer, and an optical semiconductor element with a coating layer obtained thereby.

  Conventionally, it is known that a light-emitting diode element is sealed with a fluorescent sealing sheet including a fluorescent layer and a sealing layer in order (see, for example, Patent Document 1).

  In Patent Document 1, when a light emitting diode element is sealed with such a fluorescent sealing sheet, the sealing layer is deformed so as to embed the light emitting diode element, while the fluorescent layer maintains a plate shape.

JP 2013-214716 A

  However, when the light emitting diode element is sealed with the fluorescent sealing sheet described in Patent Document 1, the fluorescent layer covering the peripheral edge of the light emitting surface (surface opposite to the electrode surface) of the light emitting diode element is cut off. Or it may become extremely thin. In that case, there is a problem that the wavelength conversion function of the fluorescent layer cannot be sufficiently achieved, and as a result, the light emission efficiency is lowered.

  Moreover, according to the fluorescent sealing sheet described in Patent Document 1, the fluorescent layer may not be able to completely cover the peripheral side surface of the light emitting diode element. In that case, there is a problem that the adhesion of the fluorescent encapsulating sheet to the light emitting diode element is lowered, and as a result, the reliability of the light emitting diode element is lowered.

  Moreover, the excellent handling property is calculated | required by the fluorescent sealing sheet.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a method for producing an optical semiconductor element with a cover layer, which is excellent in handleability of the cushion layer, can suppress damage to the cover layer, and can reliably adhere the cover layer to the optical semiconductor element. And providing an optical semiconductor element with a coating layer obtained thereby.

  [1] The present invention provides a coating member formed of a hot melt resin and capable of coating an optical semiconductor element, a coating member provided with a cushion layer disposed on one side in the thickness direction of the coating layer, and the optical semiconductor element And after the step (1), the coating member and the optical semiconductor element are placed by the press after the step (1) so that the coating layer faces the optical semiconductor element. The step (2) of hot pressing so that they are compressed together, and the step (3) of removing the cushion layer from the coating layer after the step (2), Light with a coating layer, wherein the international rubber hardness of the cushion layer measured at 25 ° C. by a hardness meter based on a method based on K 6253-2 (2012) is 10 or more and 50 or less It is a manufacturing method of a semiconductor element.

  According to this method, since the cushion layer has a specific international rubber hardness, it is possible to prevent damage to the coating layer while being excellent in handleability, and to ensure that the coating layer is in close contact with the optical semiconductor element. it can.

  [2] The present invention provides the method for producing an optical semiconductor element with a cover layer according to the above [1], wherein the cushion layer has a thickness of 150 μm or more and less than 5,000 μm.

  According to this method, since the thickness of the cushion layer is equal to or more than the lower limit described above, damage to the coating layer can be further suppressed. Moreover, since the thickness of a cushion layer is below an upper limit mentioned above, a coating layer can adhere | attach more reliably with respect to an optical semiconductor element.

  [3] The method according to [1] or [2], wherein the pressure in the step (2) is 20 kPa or more and 120 kPa or less. is there.

  According to this method, since the pressure in the step (2) is not less than a specific lower limit, the coating layer can be more reliably adhered to the optical semiconductor element. Moreover, since the pressure in a process (2) is below a specific upper limit, damage to a coating layer can be suppressed further.

  [4] In the present invention, the covering member further includes a release layer, and the cushion layer and the cover layer are sequentially provided on the release layer. It is a manufacturing method of the optical semiconductor element with a coating layer as described in any one of [3].

  According to this method, since the covering member further includes the release layer, the handling property of the covering member is excellent. Therefore, it is possible to manufacture the optical semiconductor element with a cover layer by simply and reliably handling the cover member.

[5] In the present invention, the coating layer is obtained by performing dynamic viscoelasticity measurement under a shear mode, a frequency of 1 Hz, and a temperature rising rate of 10 ° C./min. It has a storage shear modulus G ′ of 2.0 × 10 ⁵ or less and a tan δ of 0.9 or more and 1.0 or less at any measurement temperature in the measurement range. It is a manufacturing method of the optical semiconductor element with a coating layer as described in any one of said [1]-[4].

  According to this method, since the coating layer has a specific range of storage shear modulus G ′ and tan δ, damage to the coating layer can be further suppressed, and / or the coating layer can be further reduced with respect to the optical semiconductor element. Adherence can be ensured.

  [6] The method for producing an optical semiconductor element with a cover layer according to any one of [1] to [5], wherein the cover layer has a thickness of 30 μm or more. is there.

  According to this method, since the thickness of the coating layer is equal to or greater than the above-described lower limit, damage to the coating layer can be further suppressed.

  [7] The optical semiconductor element with a cover layer according to any one of [1] to [6], wherein the cover layer is formed of a silicone resin composition. It is a manufacturing method.

  According to this method, since the coating layer is formed from the silicone resin composition, damage to the coating layer can be further suppressed even if the coating member is hot-pressed by a press. Moreover, since the coating layer is formed from the silicone resin composition, excellent transparency of the coating layer can be obtained.

  [8] The present invention is the method for manufacturing an optical semiconductor element with a cover layer according to any one of the above [1] to [7], wherein the cover layer contains a phosphor. .

  According to this method, since the coating layer contains the phosphor, the coating layer can function as the phosphor layer. Therefore, an optical semiconductor element with a coating layer having excellent luminous efficiency can be obtained.

  [9] The present invention includes an optical semiconductor element and a coating layer that covers the optical semiconductor element. The optical semiconductor element is provided with a light emitting surface on which a light emitting layer is provided, an electrode facing the light emitting surface. An electrode surface, and a connecting surface that connects peripheral edges of the light emitting surface and the electrode surface, the coating layer covers the first surface that covers the light emitting surface, and the connecting surface; A second portion that is continuous with the peripheral edge of the first portion; and a second portion of the second portion that is located on the opposite side of the one end continuous with the peripheral edge of the first portion. And a protruding portion protruding in a direction away from the optical semiconductor element.

  In this optical semiconductor element with a cover layer, since the cover layer includes a protruding portion, the protruding portion can be in close contact with the substrate when the optical semiconductor element with a cover layer is mounted on the substrate. Therefore, it is possible to obtain a light-emitting device that is superior in reliability as compared to an optical semiconductor element with a coating layer that does not have a protruding portion.

  [10] The present invention is characterized in that a plurality of the optical semiconductor elements are spaced apart from each other in the separating direction, and the protruding portions corresponding to the adjacent optical semiconductor elements are continuous. It is an optical semiconductor element with a coating layer of Claim 9.

  In this optical semiconductor element with a coating layer, the protruding portions corresponding to the optical semiconductor elements adjacent to each other are continuous, so that an optical semiconductor element assembly with a coating layer composed of a plurality of optical semiconductor elements with a coating layer can be easily configured. can do.

  According to the method for manufacturing an optical semiconductor element with a cover layer of the present invention, the damage of the cover layer can be suppressed while the handleability of the cushion layer is excellent, and the cover layer can be securely adhered to the optical semiconductor element. .

  In the optical semiconductor element with a coating layer of the present invention, a light emitting device with excellent reliability can be obtained as compared with the optical semiconductor element with a coating layer having no protrusion.

1A to 1C are process diagrams of an embodiment of a method for producing an optical semiconductor element with a coating layer of the present invention. FIG. 1A is a process (1) in which an optical semiconductor element covering sheet and an element member are prepared. FIG. 1B shows a step (2) of pressing the optical semiconductor element covering sheet and the covering layer, and FIG. 1C shows a step of taking out the optical semiconductor element assembly with a covering layer and the sealing jig from the press. 2D to 2G are process diagrams of an embodiment of the method for producing an optical semiconductor element with a coating layer of the present invention, following FIG. 1C, and FIG. 2D shows a release layer from the optical semiconductor element assembly with a coating layer. Step of peeling, FIG. 2E is a step of dicing the optical semiconductor element assembly with cover layer, FIG. 2F is a step of peeling the optical semiconductor element with cover layer from the temporary fixing sheet, and FIG. 2G is an optical semiconductor element with cover layer. The process of mounting on a board | substrate is shown. 3A to 3E are process diagrams of a modification of the embodiment shown in FIGS. 1A to 2G (an aspect in which the protruding portion is discontinuous), and FIG. 3A illustrates an optical semiconductor element covering sheet and an element member. Step (1) to be prepared, FIG. 3B is a step (2) in which the optical semiconductor element covering sheet and the covering layer are pressed, FIG. 3C is a step in which the peeling layer is peeled from the optical semiconductor element assembly with a covering layer, and FIG. FIG. 3E shows a step of mounting the optical semiconductor element with a coating layer on a substrate. 4A to 4E are process diagrams of a modification of the embodiment shown in FIGS. 1A to 2G (an embodiment in which the optical semiconductor element with a coating layer does not have a protruding portion), and FIG. 4A is an optical semiconductor element covering sheet. And the step (1) of preparing an element member, FIG. 4B is a step (2) of pressing the optical semiconductor element covering sheet and the covering layer, and FIG. 4C is peeling the release layer from the optical semiconductor element assembly with the covering layer. Process, FIG. 4D is a process of peeling the optical semiconductor element with a coating layer from the temporary fixing sheet. FIG. 4E shows a process of mounting the optical semiconductor element with a coating layer on a substrate. 5A to 5C are process diagrams of a modification of the embodiment shown in FIGS. 1A to 2G (a mode in which an optical semiconductor element pre-mounted on a substrate is covered with an optical semiconductor element covering sheet), and FIG. Is a step (1) of preparing an optical semiconductor element pre-mounted on the optical semiconductor element covering sheet and the substrate, FIG. 5B is a step of hot pressing the optical semiconductor element covering sheet, the optical semiconductor element and the substrate (3), FIG. 5C shows a step of peeling the release layer from the coating layer, and FIG. 5D shows a step of lifting the spacer. FIG. 6 is an enlarged cross-sectional view of an adhesion layer having a torn portion in the optical semiconductor element with an adhesion layer-covering layer of Comparative Examples 2 and 3. FIG. 7 is an enlarged cross-sectional view of an adhesion layer having a thin-walled portion in the optical semiconductor element with an adhesion layer-covering layer of Comparative Examples 2 and 3. FIG. 8 is an enlarged cross-sectional view of an adhesion layer having an uncovered portion that does not cover the entire peripheral side surface in the second portion in the optical semiconductor element with an adhesion layer-covering layer of Comparative Example 1. FIG. 9 is an enlarged cross-sectional view of an adhesion layer having an uncovered portion that does not cover the lower end portion of the peripheral side surface in the second portion in the optical semiconductor element with the adhesion layer-covering layer of Example 3.

  1A to 1C, the vertical direction of the paper is the vertical direction (an example of the first direction and the thickness direction), the upper side of the paper is the upper side (an example of one side of the first direction and the thickness direction), and the lower side of the paper is the lower side. This is the side (the other side in the first direction, the other side in the thickness direction). The left-right direction on the paper is the left-right direction (second direction orthogonal to the first direction, an example of the direction away from the optical semiconductor element), the left side on the paper is the left side (one side in the second direction), and the right side on the paper is the right side (second direction). The other side). The paper thickness direction is the front-rear direction (a third example orthogonal to the first direction and the second direction, a further example of the direction away from the optical semiconductor element), the front side of the paper is the front side (one side in the third direction), and the back side of the paper is This is the rear side (the other side in the third direction). Specifically, it conforms to the direction arrow in each figure.

  The manufacturing method of the optical semiconductor element 15 with a covering layer is a step (1) of installing the optical semiconductor element covering sheet 1 as a covering member including the covering layer 3 and the cushion layer 4 and the optical semiconductor element 2 in the press 10 ( 1A), a step (2) (see FIG. 1B) of hot pressing the optical semiconductor element covering sheet 1 and the optical semiconductor element 2 with a press 10, and a step (3) of removing the cushion layer 4 (FIG. 1). 2D). Hereinafter, each step will be described.

1. Process (1)
In step (1), an optical semiconductor element covering sheet 1 and an optical semiconductor element 2 are prepared as shown in FIG. 1A.

1-1. Optical Semiconductor Element Covering Sheet As shown in FIG. 1B, the optical semiconductor element covering sheet 1 is used for directly covering an optical semiconductor element 2 (described later) with a coating layer 3 described in detail later. As shown in FIG. 1A, the optical semiconductor element covering sheet 1 has a substantially flat plate shape extending in the left-right direction and the front-rear direction. The optical semiconductor element covering sheet 1 includes a covering layer 3 and a cushion layer 4 disposed on the upper side (an example of one side in the thickness direction) of the covering layer 3.

1-2. Coating Layer The coating layer 3 is an adhesion layer that can directly cover and adhere to the optical semiconductor element 2. The covering layer 3 is disposed below the optical semiconductor element covering sheet 1. The covering layer 3 has a substantially flat plate shape extending in the left-right direction and the front-rear direction.

  The coating layer 3 is formed from a hot melt resin composition. The hot melt resin composition contains a hot melt resin.

  Examples of the hot melt resin include a thermosetting resin and a thermoplastic resin, and preferably a thermosetting resin.

  Specifically, examples of the hot melt resin include silicone resin, epoxy resin, urethane resin, polyimide resin, phenol resin, urea resin, melamine resin, and unsaturated polyester resin. As a thermosetting resin, Preferably, a silicone resin and an epoxy resin are mentioned, More preferably, a silicone resin is mentioned.

  Examples of such silicone resins include silicone resins described in JP-T-2015-510257, JP-T-2015-513328, and International Publication No. 2013/101654.

  A commercially available product can be used as the silicone resin, and examples thereof include LF-1020 (manufactured by Toray Dow Corning).

  Moreover, the hot melt resin composition can contain a phosphor.

Examples of the phosphor include a yellow phosphor and a red phosphor. Examples of yellow phosphors include garnet phosphors having a garnet crystal structure such as YAG: Ce, and oxynitride phosphors such as Ca-α-SiAlON. Examples of the red phosphor include nitride phosphors such as CaAlSiN ₃ : Eu and CaSiN ₂ : Eu. The phosphor is preferably a yellow phosphor, and more preferably a garnet phosphor.

  Examples of the shape of the phosphor include a spherical shape, a plate shape, and a needle shape. The average value of the maximum length of the phosphor (in the case of a sphere, the average particle diameter) is, for example, 0.1 μm or more, preferably 1 μm or more, and for example, 200 μm or less, preferably 100 μm or less. But there is.

  The phosphors can be used alone or in combination.

  The blending ratio of the phosphor is, for example, 5% by mass or more, preferably 10% by mass or more, and, for example, 80% by mass or less, preferably 70% by mass or less with respect to the hot-melt resin composition. is there. The blending ratio of the hot melt resin is the remainder of the blending ratio of the phosphor described above. Further, the blending ratio of the phosphor is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, for example, 90 parts by mass or less, preferably 100 parts by mass of the hot melt resin. 80 parts by mass or less.

  The hot melt resin composition may further contain a filler (described later) as necessary. The content ratio of the filler is appropriately set depending on the use and purpose.

  In order to prepare the coating layer 3, a hot melt resin and, if necessary, a phosphor (and a filler) are blended to prepare a varnish of the hot melt resin composition. Apply to the surface.

  Thereafter, the hot melt resin composition is heated as necessary.

  The thickness T1 of the coating layer 3 is, for example, 10 μm or more, preferably 30 μm or more, more preferably 50 μm or more, and for example, 500 μm or less.

  If the thickness T1 of the coating layer 3 is equal to or greater than the lower limit described above, it is possible to further suppress breakage of the missing portion (reference numeral 101 in FIG. 6) of the coating layer 3 and the like.

1-3. Cushion layer As shown in FIG. 1B, the cushion layer 4 is a layer that can cover the optical semiconductor element 2 via the covering layer 3 in the step (2) described later, and as shown in FIG. 2D. In the step (3) to be described later, it is a release layer that is peeled off from the coating layer 3.

  And the cushion layer 4 is a layer which can make the nonuniform pressure which the coating layer 3 can receive by the press of the press 10 in the hot press (refer FIG. 1B) of a process (2) uniform. Specifically, the cushion layer 4 is a layer that can disperse the pressure applied to the peripheral edge of the light emitting surface 8 (described later) of the optical semiconductor element 2.

  As shown in FIG. 1A, the cushion layer 4 is disposed on the covering layer 3, specifically, on the entire upper surface of the covering layer 3. The cushion layer 4 has a substantially flat plate shape extending in the left-right direction and the front-rear direction.

  The cushion layer 4 is formed from a cushion material.

  The cushion material is made of an elastic material, for example. Examples of the elastic material include gel and sponge. Preferably, a gel is used. The gel is formed from, for example, a resin. Examples of the resin include a thermoplastic resin and a thermosetting resin.

  Examples of the thermoplastic resin include polyolefin (for example, polyethylene, polypropylene, ethylene-propylene copolymer), acrylic resin (for example, polymethyl methacrylate), polyvinyl acetate, ethylene-vinyl acetate copolymer, poly Vinyl chloride, polystyrene, polyacrylonitrile, polyamide, polycarbonate, polyacetal, polyethylene terephthalate, polyphenylene oxide, polyphenylene sulfide, polysulfone, polyethersulfone, polyetheretherketone, polyallylsulfone, thermoplastic polyimide, thermoplastic urethane resin, polyaminobismaleimide , Polyamideimide, polyetherimide, bismaleimide triazine resin, polymethylpentene, fluororesin, liquid crystal polymer, olefin Down - vinyl alcohol copolymer, ionomer, polyarylate, acrylonitrile - ethylene - styrene copolymers, acrylonitrile - butadiene - styrene copolymer, acrylonitrile - styrene copolymer.

  The thermosetting resin is, for example, a thermosetting resin that can be in a B-stage state, and specifically includes a two-stage reaction curable resin and a one-stage reaction curable resin.

  Examples of the thermosetting resin include a two-stage reaction curable resin and a one-stage reaction curable resin.

  The two-stage reaction curable resin has two reaction mechanisms. In the first stage reaction, the A stage state is changed to the B stage (semi-cured), and then in the second stage reaction, the B stage state is obtained. To C-stage (complete curing). That is, the two-stage reaction curable resin is a thermosetting resin that can be in a B-stage state under appropriate heating conditions. The B stage state is a state between the A stage state where the thermosetting resin is in a liquid state and the fully cured C stage state, and curing and gelation proceed slightly, and the compression elastic modulus is C stage. A semi-solid state or a solid state smaller than the elastic modulus of the state.

  The one-stage reaction curable resin has one reaction mechanism, and can be changed from the A-stage state to the C-stage (completely cured) by the first-stage reaction. Such a one-stage reaction curable resin can stop the reaction in the middle of the first-stage reaction and change from the A-stage state to the B-stage state. It is a thermosetting resin that can be C-staged (completely cured) from the B-stage state when the reaction is resumed. That is, such a thermosetting resin is a thermosetting resin that can be in a B-stage state. Further, the one-stage reaction curable resin cannot be controlled to stop in the middle of the one-stage reaction, that is, cannot enter the B stage state, and is changed from the A stage state to the C stage (completely cured). A) thermosetting resin.

  Examples of the thermosetting resin include silicone resin, epoxy resin, urethane resin, polyimide resin, phenol resin, urea resin, melamine resin, and unsaturated polyester resin. As a thermosetting resin, Preferably, a silicone resin and an epoxy resin are mentioned, More preferably, a silicone resin is mentioned.

  The above-mentioned thermosetting resin may be the same type or a plurality of types.

  Examples of the silicone resin include silicone resin compositions such as an addition reaction curable silicone resin composition and a condensation / addition reaction curable silicone resin composition from the viewpoint of heat resistance. Preferably, an addition reaction curable silicone is used. A resin composition is mentioned. Silicone resins may be used alone or in combination.

  The addition reaction curable silicone resin composition is a one-stage reaction curable resin and contains, for example, an alkenyl group-containing polysiloxane, a hydrosilyl group-containing polysiloxane, and a hydrosilylation catalyst.

  The alkenyl group-containing polysiloxane contains two or more alkenyl groups and / or cycloalkenyl groups in the molecule. The alkenyl group-containing polysiloxane is specifically represented by the following average composition formula (1).

Average composition formula (1):
R ¹ _a R ² _b SiO _{(4-ab) / 2}
(In the formula, R ¹ represents an alkenyl group having 2 to 10 carbon atoms and / or a cycloalkenyl group having 3 to 10 carbon atoms. R ² represents an unsubstituted or substituted monovalent carbon atom having 1 to 10 carbon atoms. A hydrogen group (excluding an alkenyl group and a cycloalkenyl group); a is from 0.05 to 0.50, and b is from 0.80 to 1.80.
In formula (1), examples of the alkenyl group represented by R ¹ include alkenyl having 2 to 10 carbon atoms such as vinyl group, allyl group, propenyl group, butenyl group, pentenyl group, hexenyl group, heptenyl group, and octenyl group. Groups. Examples of the cycloalkenyl group represented by R ¹ include cycloalkenyl groups having 3 to 10 carbon atoms such as a cyclohexenyl group and a norbornenyl group.

R ¹ is preferably an alkenyl group, more preferably an alkenyl group having 2 to 4 carbon atoms, and still more preferably a vinyl group.

The alkenyl groups represented by R ¹ may be the same type or a plurality of types.

The monovalent hydrocarbon group represented by R ² is an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms other than an alkenyl group and a cycloalkenyl group.

  Examples of the unsubstituted monovalent hydrocarbon group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, a pentyl group, a hexyl group, and a pentyl group. , Heptyl group, octyl group, 2-ethylhexyl group, nonyl group, decyl group and other alkyl groups having 1 to 10 carbon atoms such as cyclopropyl, cyclobutyl group, cyclopentyl group and cyclohexyl group. Examples include alkyl groups such as aryl groups having 6 to 10 carbon atoms such as phenyl, tolyl and naphthyl groups, and aralkyl groups having 7 to 8 carbon atoms such as benzyl and benzylethyl groups. Preferably, a C1-C3 alkyl group and a C6-C10 aryl group are mentioned, More preferably, a methyl group and / or a phenyl group are mentioned.

  On the other hand, examples of the substituted monovalent hydrocarbon group include those in which the hydrogen atom in the above-described unsubstituted monovalent hydrocarbon group is substituted with a substituent.

  Examples of the substituent include a halogen atom such as a chlorine atom, for example, a glycidyl ether group.

  Specific examples of the substituted monovalent hydrocarbon group include a 3-chloropropyl group and a glycidoxypropyl group.

  The monovalent hydrocarbon group may be unsubstituted or substituted, and is preferably unsubstituted.

The monovalent hydrocarbon groups represented by R ² may be of the same type or a plurality of types. Preferably, a methyl group and / or a phenyl group are mentioned, More preferably, combined use of a methyl group and a phenyl group is mentioned.

  a is preferably 0.10 or more and 0.40 or less.

  b is preferably 1.5 or more and 1.75 or less.

  The weight average molecular weight of the alkenyl group-containing polysiloxane is, for example, 100 or more, preferably 500 or more, and for example, 10,000 or less, preferably 5,000 or less. The weight average molecular weight of the alkenyl group-containing polysiloxane is a conversion value based on standard polystyrene measured by gel permeation chromatography.

  The alkenyl group-containing polysiloxane is prepared by an appropriate method, and a commercially available product can also be used.

  The alkenyl group-containing polysiloxanes may be of the same type or a plurality of types.

  The hydrosilyl group-containing polysiloxane contains, for example, two or more hydrosilyl groups (SiH groups) in the molecule. Specifically, the hydrosilyl group-containing polysiloxane is represented by the following average composition formula (2).

Average composition formula (2):
^{_{H c R 3 d SiO (4}} -c-d) / 2
(In the formula, R ³ represents an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms (excluding an alkenyl group and / or a cycloalkenyl group). C is 0.30 or more. 1.0, and d is 0.90 or more and 2.0 or less.)
In formula (2), the unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms represented by R ³ is an unsubstituted or substituted carbon group having 1 to 10 carbon atoms represented by R ² in formula (1). The same thing as the monovalent hydrocarbon group of is illustrated. Preferably, an unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 10 carbon atoms, and more preferably a methyl group. And / or a phenyl group.

  c is preferably 0.5 or less.

  d is preferably 1.3 or more and 1.7 or less.

  The weight average molecular weight of the hydrosilyl group-containing polysiloxane is, for example, 100 or more, preferably 500 or more, and for example, 10,000 or less, preferably 5,000 or less. The weight average molecular weight of the hydrosilyl group-containing polysiloxane is a conversion value based on standard polystyrene measured by gel permeation chromatography.

  The hydrosilyl group-containing polysiloxane is prepared by an appropriate method, and a commercially available product can also be used.

  Further, the hydrosilyl group-containing polysiloxane may be of the same type or a plurality of types.

Average composition formula described above (1) and the average compositional formula (2), at least one of the hydrocarbon groups R ² and R ³ preferably includes a phenyl group, more preferably, R ² and R ³ Both hydrocarbons contain a phenyl group. When at least one of the hydrocarbon groups of R ² and R ³ contains a phenyl group, the addition reaction curable silicone resin composition is a phenyl silicone resin composition.

  The blending ratio of the hydrosilyl group-containing polysiloxane is the ratio of the number of moles of alkenyl groups and cycloalkenyl groups of the alkenyl group-containing polysiloxane to the number of moles of hydrosilyl groups of the hydrosilyl group-containing polysiloxane (number of moles of alkenyl groups and cycloalkenyl groups). / Number of moles of hydrosilyl group) is adjusted to be, for example, 1/30 or more, preferably 1/3 or more, and for example, 30/1 or less, preferably 3/1 or less.

  The hydrosilylation catalyst is a substance (addition catalyst) that improves the reaction rate of the hydrosilylation reaction (hydrosilyl addition) between the alkenyl group and / or cycloalkenyl group of the alkenyl group-containing polysiloxane and the hydrosilyl group of the hydrosilyl group-containing polysiloxane. If it exists, it will not specifically limit, For example, a metal catalyst is mentioned. Examples of the metal catalyst include platinum catalysts such as platinum black, platinum chloride, chloroplatinic acid, platinum-olefin complexes, platinum-carbonyl complexes, and platinum-acetyl acetate, for example, palladium catalysts such as rhodium catalyst.

  The blending ratio of the hydrosilylation catalyst is, for example, 1.0 ppm or more on a mass basis with respect to the alkenyl group-containing polysiloxane and the hydrosilyl group-containing polysiloxane as the metal amount of the metal catalyst (specifically, metal atom). In addition, for example, it is 10,000 ppm or less, preferably 1,000 ppm or less, and more preferably 500 ppm or less.

  The addition reaction curable silicone resin composition is prepared by blending an alkenyl group-containing polysiloxane, a hydrosilyl group-containing polysiloxane, and a hydrosilylation catalyst in the above proportions.

  The above-described addition reaction curable silicone resin composition is prepared and used in an A stage (liquid) state by first blending an alkenyl group-containing polysiloxane, a hydrosilyl group-containing polysiloxane, and a hydrosilylation catalyst. Thereafter, the reaction is stopped halfway, so that a B stage (semi-solid or solid) state is obtained.

  As described above, the phenyl silicone resin composition undergoes a hydrosilylation addition reaction between the alkenyl group and / or cycloalkenyl group of the alkenyl group-containing polysiloxane and the hydrosilyl group of the hydrosilyl group-containing polysiloxane by heating under desired conditions. After that, the hydrosilylation addition reaction is once stopped. As a result, the A stage state can be changed to the B stage (semi-cured) state.

  After that, the phenyl-based silicone resin composition is completed by restarting the above-described hydrosilylation addition reaction by heating under further desired conditions. As a result, the B stage state can be changed to the C stage (fully cured) state.

  In the heating at this time, the resin is once softened and hardened again.

  The condensation / addition reaction curable silicone resin composition is a two-stage reaction curable resin, and specifically described in, for example, JP 2010-265436 A, JP 2013-187227 A, and the like. 1 to 8 condensation / addition reaction curable silicone resin compositions, for example, JP2013-091705A, JP2013-001815A, JP2013-001814A, JP2013-001813A, Examples thereof include a cage-type octasilsesquioxane-containing silicone resin composition described in JP2012-102167A. The condensation / addition reaction curable silicone resin composition is solid and has both thermoplasticity and thermosetting properties. Preferred examples of the condensation / addition reaction curable silicone resin composition include first to eighth condensation / addition reaction curable silicone resin compositions, and more preferably disclosed in JP 2010-265436 A. A methyl type silicone resin composition is mentioned.

  The resin is preferably a thermosetting resin.

  The cushion material can contain an additive in an appropriate ratio, if necessary.

  In order to produce the cushion layer 4, for example, a cushion material is laminated on the surface of the release layer 5 in layers.

  The release layer 5 is formed into a sheet shape from, for example, a polymer such as a polyethylene film or a polyester film (such as PET) or a metal. The thickness of the release layer 5 is, for example, 1 μm or more, preferably 10 μm or more, and for example, 2,000 μm or less, preferably 1,000 μm or less.

  When the cushion layer 4 is prepared from a gel, the cushion layer 4 formed in a sheet shape in advance is transferred to the release layer 5 or the cushion layer 4 is directly laminated on the release layer 5. When the cushion layer 4 is prepared from a resin, first, the above-described resin varnish is prepared, and then applied to the surface of the release layer 5.

  Examples of the elastic material include silicone gels such as FFG seeds (manufactured by Polymertech Japan).

  The thickness T2 of the cushion layer 4 is, for example, 10 μm or more, preferably 150 μm or more, more preferably 200 μm or more, and for example, 10,000 μm or less, preferably less than 5,000 μm, preferably 2, 000 μm or less.

  If the thickness T2 of the cushion layer 4 is equal to or more than the lower limit described above, when the optical semiconductor element 2 is covered with the optical semiconductor element covering sheet 1, damage (such as reference numeral 101 in FIG. Further suppression can be achieved.

  If the thickness T2 of the cushion layer 4 is equal to or less than the above upper limit, formation of a non-contact portion (reference numeral 103 in FIGS. 8 and 9) is suppressed when the optical semiconductor element 2 is covered with the optical semiconductor element covering sheet 1. be able to.

  The ratio (T2 / T1) of the thickness T2 of the cushion layer 4 to the thickness T1 of the covering layer 3 is, for example, 0.5 or more, preferably 1.5 or more, more preferably 3 or more, and further preferably 10 For example, it is 200 or less, preferably less than 100, and more preferably 75 or less.

1-4. Physical properties of the coating layer and the cushion layer The international rubber hardness of the cushion layer 4 measured at 25 ° C. by a hardness meter based on a method according to JIS K 6253-2 (2012) is 10 or more, preferably 20 or more. Yes, 50 or less, preferably 45 or less.

  If the international rubber hardness of the cushion layer 4 exceeds the above-mentioned upper limit, when the optical semiconductor element 2 is covered with the optical semiconductor element covering sheet 1, damage such as a missing portion of the covering layer 3 (reference numeral 101 in FIG. 6). It cannot be effectively suppressed.

  On the other hand, if the international rubber hardness of the cushion layer 4 is less than the lower limit described above, the handleability of the cushion layer 4 is lowered. That is, the formation of the non-contact part 103 in which the coating layer 3 as shown in FIG. 8 or 9 does not contact the peripheral side surface 9 cannot be suppressed.

  In particular, when the cushion layer 4 is made of a silicone gel, the cushion layer 4 has the following physical properties. That is, the hardness defined by the penetration of the cushion layer 4 is, for example, 50 or more, preferably 70 or more, more preferably 90 or more, for example 100 or less. The tensile strength of the cushion layer 4 is, for example, 0.01 MPa or more, preferably 0.05 MPa or more, for example, 0.20 MPa or less, preferably less than 0.10 MPa. The elongation of the cushion layer 4 is, for example, 100% or more, preferably 200% or more, for example, 400% or less, preferably 250% or less. The tear strength of the cushion layer 4 is, for example, 0.1 N / mm or more, preferably 0.5 N / mm or more, for example, 1.0 N / mm or less.

The covering layer 3 has a storage shear elastic modulus G ′ of, for example, 1.0 × at a measurement temperature of 60 ° C. or more and 90 ° C. or less, specifically, 90 ° C. 10 ⁴ Pa or more, preferably 9.0 × 10 ⁴ Pa or more, and for example, 1.0 × 10 ⁶ Pa or less, preferably 2.0 × 10 ⁵ Pa or less.

  In the dynamic viscoelasticity measurement of the coating layer 3, tan δ at the above-described temperature is, for example, 0.8 or more, preferably 0.9 or more, for example 1.0 or less.

  In the coating layer 3, if the storage shear modulus G ′ is in the above range and tan δ is in the above range, the optical semiconductor element 2 is heated by the optical semiconductor element coating sheet 1 at the above temperature by hot pressing. When coating, damage to the coating layer 3 can be further suppressed, and / or the coating layer 3 can be more reliably adhered to the optical semiconductor element 2.

1-5. Release Layer The optical semiconductor element-covered sheet 1 further includes a release layer 5 as shown in FIG. 1A.

  The release layer 5 is a protective layer that protects the cushion layer 4 before and during use of the optical semiconductor element covering sheet 1. The release layer 5 is disposed on the upper part (uppermost part) of the optical semiconductor element covering sheet 1. The release layer 5 forms the upper surface of the optical semiconductor element covering sheet 1. The release layer 5 has a substantially flat plate shape extending in the left-right direction and the front-rear direction. The release layer 5 is disposed on the cushion layer 4, specifically, the entire upper surface of the cushion layer 4 and a position protruding from the surface outward (outward in the front-rear direction and outward in the left-right direction). That is, the release layer 5 includes the cushion layer 4 when projected in the thickness direction, that is, the lower surface of the peripheral end portion of the release layer 5 is exposed downward from the cushion layer 4.

  As shown in FIG. 1B, the release layer 5 is a layer that does not substantially deform in the hot pressing in the step (2) described later. The release layer 5 is a layer in which a spacer 53 (described later) is installed at the peripheral end portion of the upper surface.

  The release layer 5 is formed into a sheet shape from, for example, a polymer such as a polyethylene film or a polyester film (such as PET) or a metal. The thickness of the release layer 5 is, for example, 1 μm or more, preferably 10 μm or more, and for example, 2,000 μm or less, preferably 1,000 μm or less.

1-6. Manufacture of Optical Semiconductor Element Covering Sheet To manufacture the optical semiconductor element covering sheet 1, first, as shown in FIG. 1A, a cushion layer 4 laminated on the release layer 5 is prepared.

  Separately, a varnish of the hot-melt resin composition is prepared, and subsequently, this is applied to the surface of a release sheet (not shown) and dried to obtain the coating layer 3.

  Thereafter, the coating layer 3 is laminated on the surface of the cushion layer 4. Specifically, the covering layer 3 is bonded to the cushion layer 4. Thereafter, a release sheet (not shown) is released from the cushion layer 4.

  Thereby, the optical semiconductor element covering sheet 1 including the release layer 5, the cushion layer 4, and the covering layer 3 in order is manufactured.

  This optical semiconductor element covering sheet 1 preferably comprises only a release layer 5, a cushion layer 4, and a covering layer 3. Such an optical semiconductor element covering sheet 1 is a device that can be distributed industrially and used industrially.

1-7. Optical Semiconductor Element The optical semiconductor element 2 is provided in the element member 18.

  The element member 18 includes the optical semiconductor element 2, a temporary fixing sheet 17 that temporarily fixes the optical semiconductor element 2, and a carrier 6 that supports the plurality of optical semiconductor elements 2 via the temporary fixing sheet 17.

  The optical semiconductor element 2 is, for example, an LED or LD that converts electrical energy into light energy. Preferably, the optical semiconductor element 2 is a blue LED (light emitting diode element) that emits blue light. On the other hand, the optical semiconductor element 2 does not include a rectifier such as a transistor having a technical field different from that of the optical semiconductor element.

  A plurality of optical semiconductor elements 2 are arranged on the temporary fixing sheet 17 in the front-rear direction and the left-right direction at intervals from each other. Each of the plurality of optical semiconductor elements 2 has a substantially flat plate shape along the front-rear direction and the left-right direction. Moreover, the optical semiconductor element 2 has the electrode surface 7, the light emission surface 8, and the surrounding side surface 9 as an example of a connection surface.

  The electrode surface 7 is a lower surface of the optical semiconductor element 2 and is a surface on which an electrode (not shown) is provided.

  The light emitting surface 8 is the upper surface of the optical semiconductor element 2, and is disposed so as to face the electrode surface 7 with an interval on the upper side. A light emitting layer (not shown) is provided on the light emitting surface 8.

  The peripheral side surface 9 connects the peripheral end edge of the electrode surface 7 and the peripheral end edge of the light emitting surface 8.

  The dimensions of the optical semiconductor element 2 are appropriately set. Specifically, the thickness (height) is, for example, 0.1 μm or more, preferably 0.2 μm or more, and, for example, 500 μm or less, Preferably, it is 200 micrometers or less. The length in the left-right direction and / or the length in the front-rear direction of the optical semiconductor element 2 is, for example, 0.05 mm or more, preferably 0.1 mm or more, and, for example, 1.0 mm or less, preferably 0.8 mm. It is as follows. An interval between adjacent optical semiconductor elements 2 (an interval in the front-rear direction and / or the left-right direction) is, for example, 0.05 mm or more, preferably 0.1 mm or more, and, for example, 1.0 mm or less, preferably Is 0.8 mm or less.

  The temporary fixing sheet 17 is formed into a sheet shape from a pressure-sensitive adhesive composition configured to reduce the pressure-sensitive adhesive force by treatment (for example, irradiation with active energy rays). The temporary fixing sheet 17 is disposed on the entire upper surface of the carrier 6 and has a substantially flat plate shape extending in the front-rear direction and the left-right direction. The thickness of the temporary fixing sheet 17 is, for example, 100 μm or more, preferably 300 μm or more, and for example, 2,000 μm or less, preferably 1,000 μm or less.

  The carrier 6 is disposed below the temporarily fixing sheet 17. The carrier 6 has a substantially flat plate shape extending in the front-rear direction and the left-right direction. The center portion of the upper surface of the carrier 6 is pressure-sensitively bonded to the temporarily fixing sheet 17, and the peripheral end portion of the upper surface of the carrier 6 is exposed from the temporarily fixing sheet 17. Examples of the carrier 6 include a metal foil such as a stainless steel foil, for example, a glass sheet, for example, a polymer film. The thickness of the carrier 6 is, for example, 100 μm or more, preferably 300 μm or more, and for example, 2,000 μm or less, preferably 1,000 μm or less.

  And in order to prepare the element member 18, the temporary fixing sheet 17 is laminated | stacked on the center part of the upper surface of the carrier 6, and the electrode surface 7 of the some optical semiconductor element 2 is on the upper surface of the carrier 6, and the left-right direction and the front-back direction It mounts (pressure-sensitive adhesion) so that it may mutually arrange at intervals. Thus, the plurality of optical semiconductor elements 2 are temporarily fixed to the carrier 6 via the temporary fixing sheet 17.

2. Process (2)
Step (2) is performed after step (1). In step (2), as shown in FIG. 1A, first, the optical semiconductor element covering sheet 1 and the element member 18 are installed in the press 10.

  The press machine 10 is a hot press machine provided with a heat source (not shown). The press machine 10 includes a lower plate 11 and an upper plate 12 that is disposed on the upper side of the lower plate 11 and configured to be capable of hot pressing with respect to the lower plate 11.

  In order to install the optical semiconductor element covering sheet 1 and the element member 18 in the press 10, first, the optical semiconductor element covering sheet 1 and the element member 18 are arranged on the sealing jig 50, and the sealing jig 50 is pressed. Installed in machine 10.

  The sealing jig 50 is made of metal and includes a lower member 51, an upper member 52, and a spacer 53.

  The lower member 51 has a substantially flat plate shape extending in the left-right direction and the front-rear direction. The lower member 51 has a size larger than that of the carrier 6.

  The upper member 52 has a substantially flat plate shape extending in the left-right direction and the front-rear direction. The upper member 52 has a size larger than that of the release layer 5.

  In step (2), the spacer 53 is a member having a thickness that can set the distance between the lower member 51 and the upper member 52 to a desired value in the hot press shown in FIG. 1B. Although not shown in FIG. 1A, the spacer 53 has, for example, a substantially rectangular frame shape in plan view. Alternatively, the spacer 53 may be two rod-shaped members that extend in the front-rear direction and are spaced apart from each other in the left-right direction.

  In order to arrange the optical semiconductor element covering sheet 1 and the element member 18 on the sealing jig 50, the carrier 6 of the element member 18 is placed on the upper surface of the lower member 51, and then the spacer 53 is placed on the upper surface of the carrier 6. It is placed on the peripheral edge of the. Separately, the release layer 5 of the optical semiconductor element covering sheet 1 is placed on the lower surface of the upper member 52.

  Thereafter, the lower member 51 provided with the element member 18 and the spacer 53 is installed on the lower plate 11 of the press 10. On the other hand, the upper member 52 provided with the optical semiconductor element covering sheet 1 is installed on the upper plate 12 of the press 10. At this time, the covering layer 3 and the cushion layer 4 are disposed so as to include the plurality of optical semiconductor elements 2 and to be positioned inside the spacer 53 when projected in the vertical direction. The covering layer 3 faces (or faces) the plurality of optical semiconductor elements 2. Thereby, the sealing jig 50 is installed in the press 10.

  Next, the optical semiconductor element covering sheet 1 and the element member 18 are hot-pressed using the press machine 10. Specifically, the upper plate 12 is pressed toward the lower plate 11 while heating the optical semiconductor element covering sheet 1 with a heat source (not shown) provided on the upper plate 12.

  The temperature (press temperature) in the hot press is, for example, 50 ° C. or more, preferably 80 ° C. or more, and for example, 120 ° C. or less, preferably 100 ° C. or less.

  If the temperature of the hot press is within the above-mentioned range, the hot melt resin constituting the coating layer 3 can be in a state before soft melting and in a plastically deformable state (softened state). The light emitting surface 8 and the peripheral side surface 9 of the optical semiconductor element 2 can be reliably adhered (directly covered) while suppressing the covering layer 3 from being damaged.

  The pressure P in the hot press is, for example, 5 kPa or more, preferably 20 kPa or more and 200 kPa or less, preferably 120 kPa or less.

  When the pressure P in the hot press is equal to or higher than the lower limit described above, the adhesion of the coating layer 3 to the optical semiconductor element 2 can be improved. On the other hand, if the pressure P in the hot press is equal to or less than the above upper limit, damage to the coating layer 3 can be further suppressed.

  By the above pressing, the optical semiconductor element covering sheet 1 and the plurality of optical semiconductor elements 2 are compressed together.

  And as shown in FIG. 1B, since the coating layer 3 is formed from the hot melt resin composition in the optical semiconductor element coating sheet 1 by the hot press of the press 10, the cushion layer 4 is not heated and melted. This is a state that is plastically deformable (softened state). Therefore, the shape of the cover layer 3 that is substantially flat is changed to a shape along the light emitting surface 8 and the peripheral side surface 9 of the optical semiconductor element 2. At the same time, the lower surface of the cushion layer 4 having a substantially flat surface changes so as to follow the surface shape of the covering layer 3. That is, the cushion layer 4 has a recess corresponding to the plurality of optical semiconductor elements 2 and whose lower surface is recessed upward.

  Specifically, the coating layer 3 has a shape that integrally includes a first portion 31, a second portion 32, and a protruding portion 33.

  The first portion 31 covers each of the plurality of light emitting surfaces 8. The first portion 31 preferably has a uniform thickness over the plurality of light emitting surfaces 8.

  The second portion 32 covers the plurality of peripheral side surfaces 9 and is continuous with the peripheral end edges of the plurality of first portions 31. The second portion 32 covers the peripheral side surface 9 over the entire vertical direction. The thickness of the second portion 32 is, for example, the same as the thickness of the first portion 31.

  The projecting portion 33 is light-transmitted from the lower end portion 35 as the other end portion on the opposite side (downward) from the upper end portion 34 as an example of one end portion that is continuous with the peripheral edge of the first portion 31 in the second portion 32. It protrudes outward in the front-rear and left-right direction of the semiconductor element 2 (an example of a direction away from the optical semiconductor element 2). Further, the protruding portions 33 corresponding to the plurality of optical semiconductor elements 2 adjacent to each other are continuous. That is, the covering layer 3 corresponds to the plurality of optical semiconductor elements 2 in the sheet portion (base portion) (a portion including the protruding portion 33) continuous in the front-rear direction and the left-right direction (surface direction), and the sheet portion. It is in a shape having a plurality of protrusions (convex portions corresponding to the first portion 31 and the second portion 32) that are aligned and arranged at equal intervals in the surface direction and project (or dent) upward. The thickness of the protruding portion 33 is the same as the thickness of the second portion 32, for example.

  The thickness T3 of the first portion 31, the thickness of the second portion 32, and the thickness of the protruding portion 33 are substantially the same as the thickness T1 of the coating layer 3 before hot pressing. It is 10 μm or more, preferably 30 μm or more, and is, for example, 500 μm or less, preferably 250 μm or less.

  The cushion layer 4 follows the coating layer 3 and has a shape integrally including a third portion 43 and a fourth portion 44.

  The third portion 43 covers the first portion 31 of the coating layer 3. The third portion 43 is located on the upper surface of the first portion 31.

  The fourth portion 44 is continuous with the plurality of third portions 43 and covers both the second portion 32 and the protruding portion 33 in the coating layer 3. The fourth portion 44 is located on the protruding portion 33 between the second portions 32 adjacent to each other.

  The thickness T4 of the third portion 43 is, for example, 50 μm or more, preferably 100 μm or more, and for example, 4500 μm or less, preferably 2000 μm or less. The thickness of the 4th part 44 is 300 micrometers or more, for example, Preferably, it is 350 micrometers or more, for example, is 4750 micrometers or less, Preferably, it is 2250 micrometers or less.

  The total thickness (T3 + T4, the total thickness of the covering layer 3 and the cushion layer 4 positioned immediately above the optical semiconductor element 2) of the thickness T3 of the first portion 31 and the thickness T4 of the third portion 43 is, for example, 20 μm. As mentioned above, Preferably, it is 100 micrometers or more, for example, is 5000 micrometers or less, Preferably, it is 1,000 micrometers or less.

  On the other hand, the release layer 5 is not substantially deformed in the above-described hot pressing.

  As a result, the optical semiconductor element assembly 16 with the coating layer including the coating layer 3 and the plurality of optical semiconductor elements 2 is obtained in a state of being in contact with the cushion layer 4 and temporarily fixed to the temporary fixing sheet 17. The optical semiconductor element assembly 16 with a coating layer is an assembly of a plurality of optical semiconductor elements 15 with a coating layer described below, and is provided in common with the plurality of optical semiconductor elements 15 with a coating layer. A coating layer 3 is provided. Further, the optical semiconductor element assembly 16 with the covering layer is sandwiched between the lower member 51 and the upper member 52 of the sealing jig 50.

3. Step (3)
Step (3) is performed after step (2). In step (2), the cushion layer 4 is removed from the covering layer 3 as shown in FIG. 2D.

  Specifically, first, as shown in FIG. 1C, the covering layer-attached optical semiconductor element assembly 16, the temporary fixing sheet 17, the carrier 6, and the sealing jig 50 are taken out from the press 10.

  Subsequently, the upper member 52 is pulled up as indicated by an arrow in FIG. 1C.

  Then, as shown to FIG. 2D, the cushion layer 4 and the peeling layer 5 are pulled up. Specifically, the release layer 5 is peeled from the optical semiconductor element assembly 16 with a coating layer.

  Next, the spacer 53 is pulled up.

  Thereby, as shown to FIG. 2E, the optical semiconductor element assembly 16 with a coating layer is obtained in the state temporarily fixed to the temporary fixing sheet 17. FIG.

  The covering layer-attached optical semiconductor element assembly 16 preferably includes only a plurality of optical semiconductor elements 2 and one covering layer 3 that covers them. The optical semiconductor element assembly 16 with a coating layer is a part of the light emitting device 20 (see FIG. 2G), that is, a part for producing the light emitting device 20, and is a device that is distributed alone and can be used industrially. is there.

  Thereafter, as shown by a thick dashed line in FIG. 2E, the optical semiconductor element assembly 16 with a coating layer is singulated.

  Specifically, the protruding portions 33 of the coating layer 3 corresponding to the plurality of optical semiconductor elements 2 are cut (diced) by a dicing saw 37. Thereby, the some optical semiconductor element 15 with a coating layer is obtained.

  Thereby, the optical semiconductor element 15 with a coating layer includes one optical semiconductor element 2 and one coating layer 3, and preferably includes only the optical semiconductor element 2 and the coating layer 3. A plurality of the optical semiconductor elements 15 with coating layers are manufactured in a state of being temporarily fixed to the temporary fixing sheet 17.

  Each dimension of the plurality of sealed optical semiconductor elements 11 is appropriately set, and the length in the front-rear direction and / or the left-right direction (the length of the coating layer 3) is, for example, 0.25 mm or more, preferably It is 0.6 mm or more, for example, 2.5 mm or less, preferably 2 mm or less.

  Thereafter, as shown by an arrow in FIG. 2F, one optical semiconductor element 15 with a coating layer is peeled off from the temporary fixing sheet 17 using a pickup device (not shown). Specifically, after the temporary fixing sheet 17 is treated (for example, irradiation of active energy rays), the electrode surface 7 of the optical semiconductor element 2 and the lower surface of the protruding portion 33 are pulled from the upper surface of the temporary fixing sheet 17. Remove.

  This optical semiconductor element 15 with a coating layer is not a light emitting device 20 (see FIG. 2G) described later, that is, does not include a substrate 29 (see FIG. 2G) provided in the light emitting device 20. That is, the optical semiconductor element 15 with a coating layer is configured so as not to be electrically connected to a terminal (not shown) provided on the substrate 29 of the light emitting device 20.

  That is, the electrode surface 7 and the lower surface of the protruding portion 33 are exposed downward. That is, the electrode surface 7 and the lower surface of the protruding portion 33 are flush with each other and form the lower surface of the optical semiconductor element 15 with the coating layer.

  Moreover, the optical semiconductor element 15 with a coating layer is a part of the light-emitting device 20 (see FIG. 2G), that is, a part for producing the light-emitting device 20, and is a device that can be distributed and used industrially. is there.

  Thereafter, as shown in FIG. 2G, the optical semiconductor element 15 with the coating layer is mounted on the substrate 29 (flip chip mounting) to manufacture the light emitting device 20.

  The board | substrate 29 has a substantially flat plate shape extended in the left-right direction and the front-back direction. The board | substrate 29 is equipped with the terminal (not shown) corresponding to the electrode (not shown) of the optical semiconductor element 15 with a coating layer on the upper surface.

  As a result, the light emitting device 20 including the substrate 29 and the optical semiconductor element 15 with the coating layer mounted thereon is obtained. The light emitting device 20 preferably includes only the substrate 29 and the optical semiconductor element 15 with the coating layer. The protruding portion 33 is in close contact with the upper surface of the substrate 29.

4). Action and Effect According to this method, the cushion layer 4 has the above-described international rubber hardness. Therefore, in the step (2), the cushion layer 4 is excellent in handleability, and at the above-described temperature, the optical semiconductor element 2 is provided. Even if the element member 18 is hot-pressed, damage to the coating layer 3 can be suppressed, and the coating layer 3 can be securely adhered to the optical semiconductor element 2.

  That is, the formation of the cut portion 101 of the coating layer 3 as shown in FIG. 6 and the thin portion 102 in the coating layer 3 as shown in FIG. 7 can be suppressed. At the same time, as shown in FIGS. 8 and 9, the formation of the non-contact portion 103 can be suppressed, and the coating layer 3 can be securely adhered to the optical semiconductor element 2.

  Moreover, according to this method, since the thickness T2 of the cushion layer 4 is equal to or greater than the above-described lower limit, damage to the coating layer 3 can be further suppressed. Moreover, since the thickness T <b> 2 of the cushion layer 4 is equal to or less than the above upper limit, the coating layer 3 can be more securely adhered to the optical semiconductor element 2.

  Moreover, according to this method, since the pressure P in the step (2) is equal to or higher than the lower limit described above, the coating layer 3 can be more firmly adhered to the optical semiconductor element 2. Moreover, since the pressure P in process (2) is below the above-mentioned upper limit, the damage of the coating layer 3 can be suppressed further.

  Moreover, according to this method, if the coating layer 3 has the storage shear elastic modulus G ′ and tan δ within the above-described range, the coating layer 3 can be further prevented from being damaged, or the coating layer 3 can be an optical semiconductor element. 2 can be more reliably adhered to.

  Moreover, according to this method, since the thickness T1 of the coating layer 3 is not less than the above lower limit, the damage of the coating layer 3 can be further suppressed.

  Further, according to this method, if the coating layer 3 is formed of a silicone resin composition, the coating layer 3 is further damaged even if the optical semiconductor element coating sheet 1 is hot-pressed by the press 10. Can be suppressed. Moreover, if the coating layer 3 is formed from the silicone resin composition, the excellent transparency of the coating layer 3 can be obtained.

  Moreover, according to this method, if the coating layer 3 contains a phosphor, the coating layer 3 can function as a phosphor layer. Therefore, the optical semiconductor element 15 with a coating layer having excellent luminous efficiency can be obtained.

5. Modifications In the following description, members and processes similar to those in the above-described embodiment are given the same reference numerals, and detailed descriptions thereof are omitted.

(1) Discontinuous protrusion (FIGS. 3A to 3E)
In one embodiment, as shown in FIG. 2E, protruding portions 33 corresponding to a plurality of adjacent optical semiconductor elements 2 are continuous. However, the protruding portions 33 corresponding to the plurality of optical semiconductor elements 2 adjacent to each other are not limited to the above, and may be discontinuous as shown in FIGS. 3B and 3C, for example.

  Specifically, a plurality of protruding portions 33 are provided corresponding to the plurality of optical semiconductor elements 2. More specifically, each of the plurality of protruding portions 33 is provided so as to have a one-to-one correspondence with each of the plurality of optical semiconductor elements 2.

  In this method, in step (1), as shown in FIG. 3A, the covering layer 3 is spaced apart from each other in the front-rear direction and the left-right direction so as to correspond to the plurality of optical semiconductor elements 2. A plurality of lines are arranged on the lower surface.

  Each of the plurality of coating layers 3 is disposed so as to face the element member 18 and include each of the plurality of optical semiconductor elements 2 when projected in the vertical direction. The covering layer 3 has a size larger than the size of the optical semiconductor element 2 in plan view.

  In order to form the coating layer 3, a hot melt resin varnish is applied to the surface of a release sheet (not shown) or the surface of the cushion layer 4 by, for example, screen printing.

  In step (2), as shown in FIG. 3B, the covering layer 3 is formed on the light emitting surface 8 and the peripheral surface of the optical semiconductor element 2 so that the protruding portions 33 corresponding to the plurality of adjacent optical semiconductor elements 2 are discontinuous. The side surface 9 is covered. Between the protruding portions 33 corresponding to the plurality of optical semiconductor elements 2 adjacent to each other, the lower end portion of the fourth portion 44 is filled, so that the lower end portions are formed on the plurality of optical semiconductor elements 2 adjacent to each other. A corresponding protruding portion 33 is separated. The lower end portion of the fourth portion 44 is in direct contact with the upper surface of the temporary fixing sheet 17.

  In the step (3), as shown in FIG. 3C, the cushion layer 4 is peeled from the plurality of optical semiconductor elements 15 with a coating layer. Thereby, the some optical semiconductor element 15 with a coating layer is obtained in the state temporarily fixed to the temporary fixing sheet 17. FIG.

  According to this method, as shown in FIG. 2E in one embodiment, the step of separating the optical semiconductor element assembly 16 with a coating layer as shown in FIG. 2E without dicing is unnecessary. Therefore, the optical semiconductor element 15 with a coating layer can be obtained easily.

  On the other hand, according to one embodiment, unlike the modification example shown in FIGS. 3A to 3D, as shown in FIG. 2E, an optical semiconductor element assembly 16 with a covering layer comprising a plurality of optical semiconductor elements 15 with a covering layer is provided. Can be configured. As a result, the light-emitting device 20 (not shown) which mounted the optical semiconductor element assembly 16 with a coating layer can be manufactured.

(2) Optical semiconductor element with coating layer having no protruding portion (FIGS. 4A to 4E)
In one embodiment, as shown in FIG. 2F, in the optical semiconductor element 15 with a coating layer, the coating layer 3 has a protruding portion 33. However, as shown in FIG. 4D, the covering layer 3 does not have the protruding portion 33 and can include only the first portion 31 and the second portion 32. That is, in the optical semiconductor element 15 with the coating layer, the coating layer 3 preferably includes only the first portion 31 and the second portion 32.

  As shown in FIG. 4A, the coating layer 3 in the step (1) is formed in a size and shape that can cover only the light emitting surface 8 and the peripheral side surface 9 in the step (3).

  In step (2), as shown in FIG. 4B, the lower surfaces of the plurality of optical semiconductor elements 15 with a coating layer are formed on the electrode surface 7 of the optical semiconductor element 2 and the lower end surface 39 of the second portion 32 in the coating layer 3. And a lower surface of the outer portion 38 filled between the adjacent second portions 32. In step (2), the electrode surface 7, the lower end surface 39, and the lower surface of the outer portion 38 are formed flush with each other in the front-rear direction and the left-right direction.

  According to the modification of FIG. 4A to FIG. 4E, the same operational effects as those of the embodiment of FIG. 1A to FIG. 2G can be obtained.

  On the other hand, the embodiment of FIGS. 1A to 2G is preferable as compared with the modified examples of FIGS. 4A to 4E.

  That is, in the optical semiconductor element 15 with a coating layer according to one embodiment, the coating layer 3 includes the protruding portion 33. Therefore, when the optical semiconductor element 15 with a coating layer is mounted on the substrate 29 as shown in FIG. The covering layer 3 can bring the protruding portion 33 into close contact with the substrate 29. Therefore, the light emitting device 20 having excellent reliability can be obtained.

(3) Other Modifications In one embodiment, the release layer 5 is provided in the optical semiconductor element cover sheet 1. For example, although not illustrated, only the cover layer 3 and the cushion layer 4 are provided without the release layer 5. Can also be provided in the optical semiconductor element covering sheet 1.

  Preferably, the optical semiconductor element covering sheet 1 further includes a release layer 5.

  According to such a method, the handling property of the optical semiconductor element covering sheet 1 is excellent. Therefore, the optical semiconductor element-covered sheet 1 can be easily and reliably handled to manufacture the optical semiconductor element 15 with a coating layer.

  In addition, the above-described plurality of modifications can be combined as appropriate.

  Specific numerical values such as blending ratio (content ratio), physical property values, and parameters used in the following description are described in the above-mentioned “Mode for Carrying Out the Invention”, and the corresponding blending ratio (content ratio) ), Physical property values, parameters, etc. may be replaced with the upper limit values (numerical values defined as “less than” or “less than”) or lower limit values (numbers defined as “greater than” or “exceeded”). it can.

Production Example 1
A silicone gel having a thickness of 2,000 μm (trade name “FFG-40100”, manufactured by Polymertec) was cut into a rectangular flat plate having a size of 60 mm × 60 mm, and this was separated into a release layer 5 (PTE sheet, product name) having a thickness of 50 μm. It was laminated on the surface of “SS4C” (Nippa). Thereby, the cushion layer 4 made of silicone gel was formed on the surface of the release layer 5.

  This cushion layer 4 has an international rubber hardness (hereinafter the same) 40 measured at 25 ° C. by a hardness meter based on a method according to JIS K 6253-2 (2012), and is defined by the penetration. The hardness was 100, the tensile strength was 0.07 MPa, the elongation was 225%, and the tear strength was 0.3 N / mm.

Production Example 2
A methyl silicone resin composition A was prepared according to the description in Example 1 described in JP 2010-265436 A.

  This is applied onto the release layer 5 and applied to the surface of the release layer 5 (PTE sheet, trade name “SS4C”, manufactured by Nipper Co., Ltd.) having a thickness of 50 μm so that the thickness after heating becomes 500 μm. The methyl silicone resin composition A was B-staged (semi-cured) by heating at 135 ° C. for 7 minutes. Thereby, the cushion layer 4 made of the gel of the B-stage methyl silicone resin composition A was formed on the surface of the release layer 5.

  The cushion layer 4 had an international rubber hardness of 40, a hardness defined by penetration of 100, a tensile strength of 0.07 MPa, an elongation of 225%, and a tear strength of 0.3 N / mm.

Synthesis example 1
In a four-necked flask equipped with a stirrer, reflux condenser, charging port and thermometer, 93.2 g of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 140 g of water, trifluoromethanesulfone 0.38 g of acid and 500 g of toluene were added and mixed. While stirring, a mixture of 729.2 g of methylphenyldimethoxysilane and 330.5 g of phenyltrimethoxysilane was added dropwise over 1 hour, and then heated under reflux for 1 hour. Then, it cooled, the lower layer (water layer) was isolate | separated and removed, and the upper layer (toluene solution) was washed with water 3 times. 0.40 g of potassium hydroxide was added to the toluene solution washed with water, and the mixture was refluxed while removing water from the water separation tube. After completion of water removal, the mixture was further refluxed for 5 hours and cooled. Thereafter, 0.6 g of acetic acid was added for neutralization, and then the toluene solution obtained by filtration was washed with water three times. Then, liquid alkenyl group containing polysiloxane A was obtained by concentrating under reduced pressure. The average unit formula and average composition formula of the alkenyl group-containing polysiloxane A are as follows.

Average unit formula:
((CH ₂ = CH) (CH ₃ ) ₂ SiO _1/2 ) _0.15 (CH ₃ C ₆ H ₅ SiO _2/2 ) _0.60 (C ₆ H ₅ SiO _3/2 ) _0.25
Average composition formula:
(CH ₂ = CH) _0.15 (CH ₃ ) _0.90 (C ₆ H ₅ ) _0.85 SiO _1.05
That is, the alkenyl group-containing polysiloxane A is represented by the above average composition formula (1) in which R ¹ is a vinyl group, R ² is a methyl group and a phenyl group, and a = 0.15 and b = 1.75. .

  Moreover, it was 2300 when the weight average molecular weight of polystyrene conversion of the alkenyl group containing polysiloxane A was measured by the gel permeation chromatography.

Synthesis example 2
In a four-necked flask equipped with a stirrer, reflux condenser, charging port and thermometer, 93.2 g of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 140 g of water, trifluoromethanesulfone 0.38 g of acid and 500 g of toluene were added and mixed. While stirring, a mixture of 173.4 g of diphenyldimethoxysilane and 300.6 g of phenyltrimethoxysilane was added dropwise over 1 hour. After completion of the addition, the mixture was heated to reflux for 1 hour. Then, it cooled, the lower layer (water layer) was isolate | separated and removed, and the upper layer (toluene solution) was washed with water 3 times. 0.40 g of potassium hydroxide was added to the toluene solution washed with water, and the mixture was refluxed while removing water from the water separation tube. After completion of water removal, the mixture was further refluxed for 5 hours and cooled. After neutralizing by adding 0.6 g of acetic acid, the toluene solution obtained by filtration was washed with water three times. Then, liquid alkenyl group containing polysiloxane B was obtained by concentrating under reduced pressure. The average unit formula and average composition formula of the alkenyl group-containing polysiloxane B are as follows.

Average unit formula:
(CH ₂ = CH (CH ₃ ) ₂ SiO _1/2 ) _0.31 ((C ₆ H ₅ ) ₂ SiO _2/2 ) _0.22 (C ₆ H ₅ SiO _3/2 ) _0.47
Average composition formula:
(CH ₂ = CH) _0.31 (CH ₃ ) _0.62 (C ₆ H ₅ ) _0.91 SiO _1.08
That is, the alkenyl group-containing polysiloxane B is represented by the above average composition formula (1) in which R ¹ is a vinyl group, R ² is a methyl group and a phenyl group, and a = 0.31 and b = 1.53. .

  Moreover, it was 1,000 when the polystyrene conversion weight average molecular weight of the alkenyl group containing polysiloxane B was measured by gel permeation chromatography.

Synthesis example 3
Diphenyldimethoxysilane (325.9 g), phenyltrimethoxysilane (564.9 g), and trifluoromethanesulfonic acid (2.36 g) were added to a four-necked flask equipped with a stirrer, reflux condenser, inlet, and thermometer. Then, 134.3 g of 1,1,3,3-tetramethyldisiloxane was added, and 432 g of acetic acid was added dropwise over 30 minutes while stirring. After completion of dropping, the mixture was heated to 50 ° C. with stirring and reacted for 3 hours. After cooling to room temperature, toluene and water were added, mixed well and allowed to stand, and the lower layer (aqueous layer) was separated and removed. Thereafter, the upper layer (toluene solution) was washed with water three times and then concentrated under reduced pressure to obtain hydrosilyl group-containing polysiloxane C (crosslinking agent C).

  The average unit formula and average composition formula of the hydrosilyl group-containing polysiloxane C are as follows.

Average unit formula:
(H (CH ₃ ) ₂ SiO _1/2 ) _0.33 ((C ₆ H ₅ ) ₂ SiO _2/2 ) _0.22 (C ₆ H ₅ PhSiO _3/2 ) _0.45
Average composition formula:
H _0.33 (CH ₃ ) _0.66 (C ₆ H ₅ ) _0.89 SiO _1.06
That is, the hydrosilyl group-containing polysiloxane C is represented by the above average composition formula (2) in which R ³ is a methyl group and a phenyl group, and c = 0.33 and d = 1.55.

  Moreover, it was 1,000 when the weight average molecular weight of polystyrene conversion of hydrosilyl group containing polysiloxane C was measured by the gel permeation chromatography.

Preparation Example 1
20 g of alkenyl group-containing polysiloxane A (Synthesis Example 1), 25 g of alkenyl group-containing polysiloxane B (Synthesis Example 2), 25 g of hydrosilyl group-containing polysiloxane C (Synthesis Example 3, cross-linking agent C), and platinum carbonyl complex (product) The name “SIP6829.2” (manufactured by Gelest, platinum concentration: 2.0 mass%) 5 mg was mixed to prepare a gel composed of phenyl-based silicone resin composition B.

Production Example 3
The gel of the B-stage phenyl-based silicone resin composition B of Preparation Example 1 was applied onto the release layer 5 and applied to the surface of the release layer 5 (PTE sheet, trade name “SS4C”, manufactured by Nipper Co., Ltd.) having a thickness of 50 μm. The film was applied so that the thickness after heating was 500 μm, and then heated at 80 ° C. for 10 minutes, whereby the phenyl silicone resin composition B was B-staged (semi-cured). Thereby, the cushion layer 4 made of the gel of the B-stage phenyl-based silicone resin composition B was formed on the surface of the release layer 5.

  The cushion layer 4 had an international rubber hardness of 50, a hardness defined by penetration of 80, a tensile strength of 0.09 MPa, an elongation of 180%, and a tear strength of 0.4 N / mm. .

Example 1
A hot melt resin (trade name: LF-1020, silicone resin, manufactured by Toray Dow Corning) and 70 parts of phosphor were blended and mixed to prepare a varnish of the hot melt resin composition, which is not shown in the figure. The coating layer 3 was formed by applying on the surface of the sheet and heating.

  Thereafter, the coating layer 3 was bonded to the cushion layer 4 of Production Example 1. Thereafter, the release sheet was peeled off from the coating layer 3. Thereby, as shown to FIG. 1A, the optical semiconductor element coating sheet 1 provided with the peeling layer 5, the cushion layer 4, and the coating layer 3 was manufactured.

  Separately, 100 (10 × 10) optical semiconductor elements 2 (1 μm × 1 μm, thickness 150 μm, trade name “EDI-FA4545A”, manufactured by Epistar) are temporarily fixed on the upper surface of the carrier 6. The pressure-sensitive adhesives were equidistantly spaced from each other. Thereby, as shown to FIG. 1A, the element member 18 provided with the some optical semiconductor element 2, the temporary fixing sheet 17, and the carrier 6 was prepared.

  Next, the optical semiconductor element covering sheet 1 and the element member 18 were placed in the sealing jig 50. Specifically, the carrier 6 of the element member 18 was placed on the upper surface of the lower member 51, and then the spacer 53 was placed on the peripheral end portion of the upper surface of the carrier 6. Separately, the release layer 5 of the optical semiconductor element covering sheet 1 was placed on the lower surface of the upper member 52. The thickness of the spacer 53 of the sealing jig 50 was 500 μm.

  Subsequently, as shown in FIG. 1A, the lower member 51 provided with the element member 18 and the spacer 53 was installed on the lower plate 11 of the press 10. Moreover, the upper member 52 provided with the optical semiconductor element covering sheet 1 was placed on the upper plate 12 of the press 10 (step (1)).

  Thereafter, as shown in FIG. 1B, the optical semiconductor element 2 and the element member 18 were hot-pressed at a press pressure of 40 kPa and 90 ° C. for 600 seconds using the press 10 (step (2)).

  As a result, an optical semiconductor element assembly 16 with a coating layer including one coating layer 3 and a plurality of optical semiconductor elements 2 is obtained in a state of being in contact with the cushion layer 4 and temporarily fixed to the element member 18. It was.

  Thereafter, as shown in FIG. 1C, the covering layer-attached optical semiconductor element assembly 16, the temporary fixing sheet 17, the carrier 6, and the sealing jig 50 were taken out from the press 10. Subsequently, the upper member 52 was pulled up as indicated by the arrow in FIG. 1C.

  Then, as shown to FIG. 2D, the cushion layer 4 was peeled from the optical semiconductor element assembly 16 with a coating layer. Thereby, the optical semiconductor element assembly 16 with the coating layer was obtained in a state of being temporarily fixed to the temporary fixing sheet 17.

  Thereafter, as shown in FIG. 2E, the optical semiconductor element assembly 16 with a coating layer was separated into pieces. Specifically, the protruding portions 33 of the coating layer 3 corresponding to the plurality of optical semiconductor elements 2 were diced with a dicing saw 37. Thereby, the some optical semiconductor element 15 with a coating layer was obtained.

  After that, as shown in FIG. 2F, the temporarily fixing sheet 17 was irradiated with ultraviolet rays, and then one optical semiconductor element 15 with a coating layer was peeled from the temporarily fixing sheet 17 using a pickup device (not shown).

Examples 2 to 11 and Comparative Examples 1 and 2
Example 1 except that the thickness of the coating layer 3, the physical properties of the coating layer 3, the formulation of the cushion layer 4, the thickness of the cushion layer 4, the pressing pressure, the pressing temperature, etc. were changed based on the formulation described in Table 1. The same processing was performed to manufacture an optical semiconductor element 15 with a coating layer.

  Specifically, in Example 2, the press temperature was changed to 85 ° C.

  In Example 3, the thickness T2 of the cushion layer 4 was changed, and the press temperature was changed to 85 ° C.

  In Example 4, the press temperature was changed to 60 ° C.

  In Example 5, the cushion layer 4 of Production Example 2 was used, the thickness T2 of the cushion layer 4 was changed, and the press temperature was changed to 60 ° C.

  In Example 6, the cushion layer 4 of Production Example 2 was used, the thickness T1 of the covering layer 3 was changed, and the press temperature was changed to 60 ° C.

In Example 7, the cushion layer 4 of Production Example 2 was used, the press pressure P was changed, the press temperature was changed to 100 ° C., and the storage shear modulus G ′ at the press temperature (100 ° C.) of the coating layer 3. Was adjusted to 8.8 × 10 ⁴ Pa.

In Example 8, the cushion layer 4 of Production Example 2 was used, the press pressure P was changed, the press temperature was changed to 100 ° C., and the storage shear modulus G ′ at the press temperature (100 ° C.) of the coating layer 3. Was adjusted to 8.8 × 10 ⁴ Pa.

In Example 9, the cushion layer 4 of Production Example 3 was used, the hardness of the cushion layer 4 was changed, the press temperature was changed to 100 ° C., and the storage shear elastic modulus at the press temperature (100 ° C.) of the coating layer 3. G ′ was adjusted to 8.8 × 10 ⁴ Pa.

  In Comparative Example 1, the international rubber hardness of the cushion layer 4 was changed.

  In Comparative Example 2, the international rubber hardness of the cushion layer 4 was changed.

  In Comparative Example 3, the international rubber hardness of the cushion layer 4 was changed, and a sponge was used as the cushion layer 4. The cushion layer 4 had a hardness defined by penetration of 80, a tensile strength of 0.03 MPa, an elongation of 110%, and a tear strength of 0.01 N / mm.

<Evaluation of optical semiconductor element covering sheet and optical semiconductor element with covering layer>
(Dynamic viscoelasticity of coating layer)
The storage shear modulus G ′ and tan δ at the press temperature of the coating layer 3 before adhering to the optical semiconductor element were determined.

  That is, the storage shear modulus G ′ and tan δ of the coating layer 3 at 90 ° C. were measured using a rheometer provided with two disks having a diameter of 8 mm opposed to each other in the vertical direction.

  Specifically, the coating layer 3 was sandwiched between two disks.

  Then, the dynamic viscoelasticity is measured under measurement conditions of a shear mode, a frequency of 1 Hz, a strain of 1%, a heating rate of 10 ° C./min, and a measurement range of 60 to 100 ° C., and storage of the coating layer 3 at the press temperature. The shear modulus G ′ and tan δ were determined.

(Handling of cushion layer 4)
The handleability of the cushion layer 4 was evaluated according to the following criteria.
X: The fluidity of the cushion layer 4 was high, the shape was not maintained, and the handleability as the cushion layer 4 was low.
○: The shape of the cushion layer 4 was maintained, and the handleability as the cushion layer 4 was good.

(Coating layer adhesion)
The cross section of the coating layer 3 in the optical semiconductor element 15 with a coating layer was observed, and the adhesion of the coating layer 3 was evaluated according to the following criteria.
×: As shown in FIG. 8, the second portion 32 of the coating layer 3 was not in close contact with the entire peripheral side surface 9 of the optical semiconductor element 2. That is, the non-contact part 103 was formed.
Δ: As shown in FIG. 9, the upper end portion 34 of the second portion 32 was in close contact with the peripheral side surface 9 of the optical semiconductor element 2, but the lower end portion 35 of the second portion 32 was around the periphery of the optical semiconductor element 2. It was not in close contact with the side surface 9. That is, the non-contact part 103 was formed.
O: The covering layer 3 was in close contact with the peripheral side surface 9 of the optical semiconductor element 2 from the upper end 34 to the lower end 35. However, the non-contact part 103 was slightly formed.
A: The covering layer 3 was in close contact with the peripheral side surface 9 of the optical semiconductor element 2 from the upper end 34 to the lower end 35.

(Damage of coating layer)
The cross section of the coating layer 3 in the optical semiconductor element 15 with the coating layer was observed, and breakage of the coating layer 3 was evaluated according to the following criteria.
X: As shown in FIG. 6, the torn part 101 is formed between the 1st part 31 and the 2nd part 32 in the coating layer 3, or the 1st part in the coating layer 3 as shown in FIG. A thin portion 102 was formed at the peripheral edge of 31. In addition, the thickness of the thin part 102 was 5 micrometers or less.
(Triangle | delta): As shown in FIG. 7, although the thin part 102 was formed in the coating layer 3 in the peripheral edge of the 1st part 31 in the coating layer 3, the thickness exceeded 5 micrometers and was 10 micrometers or less. It was.
◯: As shown in FIG. 7, the thin portion 102 was formed in the coating layer 3 at the peripheral edge of the first portion 31 in the coating layer 3, but the thickness was more than 10 μm and 30 μm or less. It was.
A: In the coating layer 3, a torn portion 101 as shown in FIG. 6 or a thin portion 102 as shown in FIG. 7 was not observed.

DESCRIPTION OF SYMBOLS 1 Optical semiconductor element coating sheet 2 Optical semiconductor element 3 Covering layer 4 Cushion layer 5 Peeling layer 7 Electrode surface 8 Light emission surface 9 Peripheral side surface 10 Press 15 Covering layer-equipped optical semiconductor element 31 1st part 32 2nd part 33 Protruding part 34 Upper end (an example of one end)
35 Lower end (an example of the other end)
P Press pressure

Claims (10)

A coating layer formed of a hot melt resin and capable of covering an optical semiconductor element, a covering member including a cushion layer disposed on one side in the thickness direction of the coating layer, and the optical semiconductor element, A step (1) of installing in a press so as to face the optical semiconductor element;
After the step (1), the step (2) of hot pressing the covering member and the optical semiconductor element so that they are mutually compressed by the pressing machine;
And (3) removing the cushion layer from the covering layer after the step (2),
With a coating layer, the international rubber hardness of the cushion layer measured at 25 ° C. by a hardness meter based on a method according to JIS K 6253-2 (2012) is 10 or more and 50 or less Manufacturing method of optical semiconductor element.   The method for manufacturing an optical semiconductor element with a cover layer according to claim 1, wherein the thickness of the cushion layer is 150 µm or more and less than 5,000 µm.   The method for producing an optical semiconductor element with a cover layer according to claim 1 or 2, wherein the pressure in the step (2) is 20 kPa or more and 120 kPa or less. The covering member further includes a release layer,
The method for producing an optical semiconductor element with a cover layer according to any one of claims 1 to 3, wherein the cushion layer and the cover layer are sequentially provided on the release layer. The coating layer is obtained by dynamic viscoelasticity measurement under measurement conditions of a shear mode, a frequency of 1 Hz, and a heating rate of 10 ° C./min, and is any one of measurement ranges of 60 ° C. or more and 90 ° C. or less. It has a storage shear elastic modulus G ′ of 2.0 × 10 ⁵ or less and a tan δ of 0.9 or more and 1.0 or less at the measurement temperature. A method for producing an optical semiconductor element with a cover layer according to claim 1.   The thickness of the said coating layer is 30 micrometers or more, The manufacturing method of the optical semiconductor element with a coating layer as described in any one of Claims 1-5 characterized by the above-mentioned.   The said coating layer is formed from the silicone resin composition, The manufacturing method of the optical semiconductor element with a coating layer as described in any one of Claims 1-6 characterized by the above-mentioned.   The said coating layer contains fluorescent substance, The manufacturing method of the optical semiconductor element with a coating layer as described in any one of Claims 1-7 characterized by the above-mentioned. An optical semiconductor element, and a coating layer covering the optical semiconductor element,
The optical semiconductor element is:
A light-emitting surface provided with a light-emitting layer, an electrode surface facing the light-emitting surface and provided with an electrode, and a connecting surface that connects peripheral edges of the light-emitting surface and the electrode surface;
The coating layer is
A first portion covering the light emitting surface;
A second portion covering the connecting surface and continuing to a peripheral edge of the first portion;
The second portion protrudes from the other end located on the side opposite to the one end continuous with the peripheral edge of the first portion in a direction away from the optical semiconductor element along the electrode surface. An optical semiconductor element with a cover layer, characterized by having a protruding portion. A plurality of the optical semiconductor elements are spaced apart from each other in the separating direction;
The optical semiconductor element with a cover layer according to claim 9, wherein the protruding portions corresponding to the optical semiconductor elements adjacent to each other are continuous.

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